Method, device and system for monitoring temperature of anode target disc in real time

Abstract

The invention relates to the technical field of medical equipment, and particularly discloses a real-time monitoring method, device and system for the temperature of an anode target disc, and the method comprises the steps: obtaining an array real-time output signal of a thin film platinum resistance sensor array located on the back surface of the anode target disc, the thin film platinum resistance sensor array is formed on the back surface of the anode target disc based on thin film deposition and a micromachining process, and the thin film platinum resistance sensor array comprises a plurality of thin film platinum resistance sensors which are distributed according to the density of a focus track area on the back surface of the anode target disc; calculating the array real-time output signal to obtain a target disc back array temperature signal; performing weighted fusion on each independent point position temperature signal in the target disc back surface array temperature signals to obtain the target disc back surface temperature; and according to a pre-trained anode three-dimensional finite element thermal model, carrying out backstepping on the back surface temperature of the target disc to obtain the front surface temperature of the target disc. According to the real-time monitoring method for the temperature of the anode target disc, the temperature of the anode target disc when the CT bulb tube equipment works can be obtained in real time.

Description

Technical Field

[0001] This invention relates to the field of medical device technology, and in particular to a method, device, and system for real-time monitoring of anode target plate temperature. Background Technology

[0002] The radiation emission performance of a CT tube affects the operation of the CT scanner. Therefore, to ensure normal operation of the CT scanner, it is necessary to maintain a stable radiation emission level from the CT tube. The radiation emission level of a CT tube is affected by the temperature of the anode target plate in the CT tube core. Therefore, the radiation emission level of the CT tube can be controlled by controlling the anode target plate temperature.

[0003] In existing technologies, the temperature monitoring of the anode target plate in a CT tube mainly involves simulating the target plate material, exposure parameters, and heat dissipation coefficient. The simulated values ​​are then calibrated through verification research and destructive experiments (such as installing miniature thermocouples near the core temperature region or using an infrared thermometer to measure the temperature of a rotating anode target plate). The calibrated simulated values ​​are then used to control the use of the target plate. However, this temperature measurement method is prone to error and is only suitable for the research and development phase. In actual use, the real-time temperature of the anode target plate cannot be obtained, making the temperature essentially a "guess," which severely affects the accuracy of radiation dose control and fails to ensure the stability of CT operation.

[0004] In summary, how to obtain the anode target plate temperature of CT tube equipment in real time has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] This invention provides a method, device, and system for real-time monitoring of anode target plate temperature, thereby solving the problem in related technologies that cannot obtain the anode target plate temperature in real time when the CT tube equipment is working.

[0006] As a first aspect of the present invention, a method for real-time monitoring of the temperature of an anode target disk is provided, comprising:

[0007] The real-time output signal of a thin-film platinum resistance sensor array located on the back of an anode target disk is acquired. The thin-film platinum resistance sensor array is formed on the back of the anode target disk based on thin-film deposition and microfabrication processes. The microfabrication process includes at least a patterning process. The thin-film platinum resistance sensor array includes multiple thin-film platinum resistance sensors according to the density distribution of the focal trajectory region on the back of the anode target disk. The density of the focal trajectory region on the back of the anode target disk increases from sparse to dense according to the distance from the focal point. The real-time output signal of the array includes multiple individual output signals corresponding one-to-one with each thin-film platinum resistance sensor.

[0008] The target disk back array temperature signal is obtained by calculating the real-time output signal of the array according to the preset temperature measurement algorithm. The target disk back array temperature signal includes multiple independent point temperature signals corresponding to each thin-film platinum resistance sensor.

[0009] The temperature signal of each independent point in the temperature signal of the target disk back array is weighted and fused according to a preset fusion algorithm to obtain the target disk back temperature.

[0010] The temperature on the back of the target plate is calculated by back-calculating the temperature on the front of the target plate using a pre-trained three-dimensional finite element thermal model of the anode.

[0011] Further, the temperature signals at each independent point in the target disk back array temperature signal are weighted and fused according to a preset fusion algorithm to obtain the target disk back temperature, including:

[0012] Obtain the location data information of each thin-film platinum resistance sensor pre-stored in the location database. The location data information includes at least the ID, location coordinates, and role coefficient of the thin-film platinum resistance sensor. The role coefficient is obtained by pre-defining through a thermal simulation model.

[0013] The back surface temperature of the target disk is obtained by weighted fusion of the position data of each thin-film platinum resistance sensor and the temperature signal of the independent point corresponding to the thin-film platinum resistance sensor.

[0014] Furthermore, the back surface temperature of the target disk is obtained by weighted fusion of the position data information of each thin-film platinum resistance sensor and the temperature signal of the independent point corresponding to that thin-film platinum resistance sensor, including:

[0015] Spatial position mapping is performed based on the position data of each thin-film platinum resistance sensor and the independent point temperature signal corresponding to the thin-film platinum resistance sensor to obtain spatially mapped temperature signals of multiple spatial points.

[0016] The spatial weight information of each thin-film platinum resistance sensor relative to a spatial point is determined based on the aforementioned role coefficients;

[0017] The temperature on the back of the target disk is obtained by weighted fusion of the spatial weight information of each thin-film platinum resistance sensor relative to the spatial point and the spatially mapped temperature signal of each spatial point.

[0018] Furthermore, the temperature on the back side of the target disk is inferred from the pre-trained three-dimensional finite element thermal model of the anode to obtain the temperature on the front side of the target disk, including:

[0019] The inversion operator is determined based on the pre-trained three-dimensional finite element thermal model of the anode;

[0020] The front temperature of the target disk is obtained by back-calculation based on the inversion operator and the temperature of the back side of the target disk.

[0021] Furthermore, the real-time monitoring method for the anode target plate temperature also includes the following steps performed before the step of back-calculating the temperature on the back side of the target plate based on the pre-trained three-dimensional finite element thermal model of the anode:

[0022] A three-dimensional finite element parametric model of the anode is constructed based on the material properties, geometric parameters, and boundary conditions of the anode target disk.

[0023] The temperature on the back of the anode target plate is calculated based on the simulation results of the heat source on the front of the anode target plate.

[0024] The heat source on the front of the anode target plate and the calculated temperature on the back of the anode target plate are used as training datasets to train the three-dimensional finite element parameterized model of the anode, thereby obtaining a pre-trained three-dimensional finite element thermal model of the anode.

[0025] Further, the array temperature signal on the back of the target disk is obtained by calculating the real-time output signal of the array according to a preset temperature measurement algorithm, including:

[0026] The individual output signal corresponding to each thin-film platinum resistance sensor is calculated according to a preset temperature measurement formula to obtain the independent point temperature signal of each thin-film platinum resistance sensor. The expression of the preset temperature measurement formula is as follows:

[0027] T=(V_t-V_0) / α,

[0028] Where V_t represents the individual output signal corresponding to each thin-film platinum resistance sensor, V_0 represents the nominal voltage, α represents the temperature coefficient, and α=I(Rx-R0) / Rx, I represents the output current of the constant current source applied to each thin-film platinum resistance sensor, Rx represents the maximum resistance of each thin-film platinum resistance sensor, and R0 represents the nominal resistance.

[0029] Furthermore, the thin-film platinum resistance sensor array is formed on the back side of the anode target disk based on thin-film deposition and microfabrication processes, including:

[0030] The back surface of the anode target disk is subjected to substrate pretreatment, which includes at least cleaning, polishing and activation processes.

[0031] An insulating layer is deposited on the back side of the anode target disk after substrate pretreatment;

[0032] A platinum resistance layer is deposited and patterned on the insulating layer based on the density of the focal trajectory region on the back side of the anode target disk to form a platinum resistance sensor temperature sensing element structure.

[0033] Leads are formed and bonded on the temperature sensing element structure of the platinum resistance sensor to achieve electrical connection of the platinum resistance sensor.

[0034] A protective layer is deposited on the platinum resistance sensor to obtain a thin-film platinum resistance sensor array.

[0035] As another aspect of the present invention, a real-time monitoring device for the temperature of an anode target plate is provided, for implementing the real-time monitoring method for the temperature of an anode target plate described above, wherein the device includes:

[0036] The acquisition module is used to acquire the real-time output signal of the thin-film platinum resistance sensor array located on the back of the anode target disk. The thin-film platinum resistance sensor array is formed on the back of the anode target disk based on thin-film deposition and microfabrication processes. The microfabrication process includes at least a patterning process. The thin-film platinum resistance sensor array includes multiple thin-film platinum resistance sensors according to the density distribution of the focal trajectory region on the back of the anode target disk. The density of the focal trajectory region on the back of the anode target disk increases from sparse to dense according to the distance from the focal point. The real-time output signal of the array includes multiple individual output signals corresponding one-to-one with each thin-film platinum resistance sensor.

[0037] The temperature measurement module is used to calculate the real-time output signal of the array according to the preset temperature measurement algorithm to obtain the target disk back array temperature signal. The target disk back array temperature signal includes multiple independent point temperature signals corresponding to each thin-film platinum resistance sensor.

[0038] The weighted fusion module is used to perform weighted fusion on the temperature signal of each independent point in the temperature signal of the target disk back array according to a preset fusion algorithm to obtain the temperature of the target disk back.

[0039] The reverse calculation module is used to reverse calculate the temperature on the back side of the target disk based on the pre-trained three-dimensional finite element thermal model of the anode, so as to obtain the temperature on the front side of the target disk.

[0040] As another aspect of the present invention, a real-time monitoring system for the temperature of an anode target disk is provided, comprising a CT tube device and a host computer.

[0041] The CT tube device includes an anode target disk and a sensor signal acquisition device. A thin-film platinum resistance sensor array is distributed on the back of the anode target disk. The sensor signal acquisition device is electrically connected to the thin-film platinum resistance sensor array and is capable of acquiring the real-time output signal of the thin-film platinum resistance sensor array.

[0042] The host computer includes the real-time monitoring device for the anode target plate temperature mentioned above. The real-time monitoring device for the anode target plate temperature is communicatively connected to the sensor signal acquisition device. The real-time monitoring device for the anode target plate temperature can process the real-time output signal of the thin-film platinum resistance sensor array to obtain the front temperature of the target plate.

[0043] Furthermore, the sensor signal acquisition device includes: a signal preprocessing module, a signal conversion module, and a signal output module, wherein the signal preprocessing module is electrically connected to the signal conversion module, and the signal output module is electrically connected to the signal conversion module;

[0044] The signal preprocessing module is used to perform signal compensation, amplification and noise filtering on the output signal of each thin-film platinum resistance sensor to obtain a preprocessed signal.

[0045] The signal conversion module is used to perform analog-to-digital conversion on the preprocessed signal to obtain a separate output signal corresponding to each thin-film platinum resistance sensor;

[0046] The signal output module is used to form the array output signal of the thin-film platinum resistance sensor array into a real-time output signal of the thin-film platinum resistance sensor array and send it to the host computer.

[0047] The real-time monitoring method for anode target temperature provided by this invention acquires the real-time output signal of a thin-film platinum resistance sensor array formed on the back of the anode target, and calculates multiple independent point temperature signals on the back of the anode target based on a temperature measurement algorithm. The back temperature of the anode target is then obtained by weighted fusion of these multiple independent point temperature signals, and the front temperature of the anode target is finally obtained by reverse calculation from the back temperature. This real-time monitoring method for anode target temperature enables the real-time measurement of the back temperature of the anode target, as the thin-film platinum resistance sensor array, based on thin-film deposition and microfabrication processes and distributed according to the density of the focal trajectory region on the back of the anode target, allows for the reverse calculation of the front temperature of the anode target. This real-time monitoring method for anode target temperature can obtain the back temperature of the anode target under vacuum, high temperature, and high-speed rotation conditions without destructive experiments, and then inversely deduce the front temperature of the target. Therefore, this real-time monitoring method for anode target temperature of the present invention achieves real-time acquisition of the anode target temperature of the CT tube equipment during operation, and the monitoring method has high accuracy, thereby enabling precise control of radiation emission and ensuring the stability of CT operation. Attached Figure Description

[0048] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof.

[0049] Figure 1 A flowchart of the real-time monitoring method for the temperature of the anode target disk provided by the present invention.

[0050] Figure 2 A flowchart for obtaining the temperature on the back of the target disk provided by the present invention.

[0051] Figure 3 The following is a flowchart illustrating the specific process for obtaining the temperature on the back of the target disk, as provided by this invention.

[0052] Figure 4 A flowchart for obtaining the front temperature of the target disk provided by the present invention.

[0053] Figure 5 The structural block diagram of the real-time monitoring device for the anode target plate temperature provided by the present invention.

[0054] Figure 6 The structural block diagram of the real-time monitoring system for the anode target plate temperature provided by the present invention.

[0055] Figure 7 This is a schematic diagram of the core structure of the CT tube device provided by the present invention.

[0056] Figure 8This is a structural block diagram of the sensor signal acquisition device provided by the present invention.

[0057] Figure 9 This is a schematic diagram illustrating the specific implementation of the signal preprocessing module and signal conversion module provided by the present invention. Detailed Implementation

[0058] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0059] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0060] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of the invention described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0061] This embodiment provides a method for real-time monitoring of the temperature of the anode target disk. Figure 1 This is a flowchart of a real-time monitoring method for anode target plate temperature provided according to an embodiment of the present invention, such as... Figure 1 As shown, it includes:

[0062] S100. Acquire the real-time output signal of the thin-film platinum resistance sensor array located on the back of the anode target disk, wherein the thin-film platinum resistance sensor array is formed on the back of the anode target disk based on thin-film deposition and microfabrication processes, the microfabrication process includes at least a patterning process, the thin-film platinum resistance sensor array includes multiple thin-film platinum resistance sensors according to the density distribution of the focal trajectory region on the back of the anode target disk, the density of the focal trajectory region on the back of the anode target disk is from sparse to dense according to the distance of the focal point, and the real-time output signal of the array includes multiple individual output signals corresponding one-to-one with each thin-film platinum resistance sensor;

[0063] In this embodiment of the invention, a thin-film platinum resistance sensor array is formed on the back side of the anode target disk through thin-film deposition and microfabrication processes. The thin-film platinum resistance sensors in this array are distributed according to the density of the focal trajectory region, increasing in density from near to far from the focal point. Furthermore, the signal output leads of all thin-film platinum resistance sensors are connected to the anode axis, and the power supply terminals of all thin-film platinum resistance sensors are connected together. A constant current source flows sequentially through each thin-film platinum resistance sensor via a multiplexer, ensuring that the output signal of the thin-film platinum resistance sensor array is actually a voltage signal. Each thin-film platinum resistance sensor can output its own voltage signal, and the final real-time output signal of the array is an array-formatted voltage signal.

[0064] S200. The target disk back array temperature signal is obtained by calculating the real-time output signal of the array according to the preset temperature measurement algorithm. The target disk back array temperature signal includes multiple independent point temperature signals corresponding to each thin-film platinum resistance sensor.

[0065] In this embodiment of the invention, each independent output signal in the real-time output signal of the array is calculated separately according to a preset temperature measurement algorithm to obtain multiple independent point temperature signals.

[0066] S300. The temperature signal of each independent point in the target disk back array temperature signal is weighted and fused according to a preset fusion algorithm to obtain the target disk back temperature.

[0067] Specifically, the temperature on the back of the target disk is obtained by weighted fusion of the temperature signals from the multiple independent points mentioned above.

[0068] S400. Based on the pre-trained three-dimensional finite element thermal model of the anode, the temperature on the back side of the target disk is calculated to obtain the temperature on the front side of the target disk.

[0069] Specifically, the front temperature of the target disk is obtained by reverse calculation based on the temperature on the back of the target disk.

[0070] Therefore, the real-time monitoring method for anode target temperature provided by this invention acquires the real-time output signal of a thin-film platinum resistance sensor array formed on the back of the anode target, and calculates multiple independent point temperature signals on the back of the anode target based on a temperature measurement algorithm. The back of the anode target temperature is then obtained by weighted fusion of these multiple independent point temperature signals, and finally, the front temperature of the anode target is obtained by reverse calculation from the back temperature. This real-time monitoring method for anode target temperature allows for the real-time measurement of the back temperature of the anode target, as the back temperature can be obtained by real-time measurement of the back temperature, and the front temperature can then be obtained by reverse calculation. This real-time monitoring method for anode target temperature can obtain the back temperature of the anode target under vacuum, high temperature, and high-speed rotation conditions without destructive experiments, and then inversely deduce the front temperature of the target. Therefore, this real-time monitoring method for anode target temperature of the present invention achieves real-time acquisition of the anode target temperature of the CT tube equipment during operation, and the monitoring method has high accuracy, thereby enabling precise control of radiation emission and ensuring the stability of CT operation.

[0071] In this embodiment of the invention, the thin-film platinum resistance sensor array is formed on the back side of the anode target disk based on thin-film deposition and microfabrication processes, including:

[0072] 1) Perform substrate pretreatment on the back side of the anode target disk, the substrate pretreatment including at least cleaning, polishing and activation processes;

[0073] It should be understood that pre-treating the back of the anode target disk can effectively remove oil and oxides before polishing and activation processes.

[0074] 2) An insulating layer is deposited on the back side of the anode target disk after substrate pretreatment;

[0075] Specifically, depositing an insulating layer on the back of the anode target disk after substrate pretreatment can effectively achieve electrical isolation.

[0076] 3) A platinum resistance layer is deposited and patterned on the insulating layer based on the density of the focal trajectory region on the back of the anode target disk to form a platinum resistance sensor temperature sensing element structure.

[0077] In this embodiment of the invention, a platinum resistance layer is deposited and patterned on the insulating layer. Specifically, a platinum film is first sputtered on the insulating layer, followed by photolithography and ion etching, and finally annealing to stabilize the layer and form a platinum resistance layer. During the formation of this platinum resistance layer, photolithography is specifically performed based on the density of the focal trajectory region on the back of the anode target disk. The layout of the final thin-film platinum resistance sensor is based on the density distribution of the focal trajectory region on the back of the anode target disk, and the density of the focal trajectory region on the back of the anode target disk increases from sparse to dense depending on the distance from the focal point.

[0078] 4) Form and bond leads on the temperature sensing element structure of the platinum resistance sensor to achieve electrical connection of the platinum resistance sensor;

[0079] Specifically, wires are connected and bonded to the temperature sensing element structure of the platinum resistance sensor to achieve the connection of the platinum resistance sensor to an electric heater.

[0080] 5) A protective layer is deposited on the platinum resistance sensor to obtain a thin-film platinum resistance sensor array.

[0081] It should be understood that a protective layer, such as silicon oxide, is ultimately deposited on the aforementioned platinum resistance sensor to protect the sensor so that it can operate for a long time in extreme environments.

[0082] Therefore, the specific formation process of the above-mentioned thin-film platinum resistance sensor array is completed on the back of the anode target disk based on multiple processes, specifically adopting the complete sequence of insulating layer deposition, platinum resistance layer deposition and patterning, and protective layer deposition. Among them, the patterning is carried out by photolithography and ion beam etching to achieve micron-level patterning, thereby achieving a high-density matrix layout and finally forming an embedded thin-film structure conformal to the anode substrate.

[0083] In this embodiment of the invention, the array temperature signal on the back of the target disk is obtained by calculating the real-time output signal of the array according to a preset temperature measurement algorithm, including:

[0084] The individual output signal corresponding to each thin-film platinum resistance sensor is calculated according to a preset temperature measurement formula to obtain the independent point temperature signal of each thin-film platinum resistance sensor. The expression of the preset temperature measurement formula is as follows:

[0085] T=(V_t-V_0) / α,

[0086] Where V_t represents the individual output signal corresponding to each thin-film platinum resistance sensor, V_0 represents the nominal voltage, α represents the temperature coefficient, and α=I(Rx-R0) / Rx, I represents the output current of the constant current source applied to each thin-film platinum resistance sensor, Rx represents the maximum resistance of each thin-film platinum resistance sensor, and R0 represents the nominal resistance.

[0087] It should be understood that the preset temperature measurement formula is calculated for the individual output signal of each of the above-mentioned thin-film platinum resistance sensors to obtain the independent point temperature signal of each thin-film platinum resistance sensor.

[0088] In this embodiment of the invention, the temperature signal of each independent point in the target disk back array temperature signal is weighted and fused according to a preset fusion algorithm to obtain the target disk back temperature, such as... Figure 2 As shown, it includes:

[0089] S310. Obtain the location data information of each thin-film platinum resistance sensor pre-stored in the location database. The location data information includes at least the ID, location coordinates, and role coefficient of the thin-film platinum resistance sensor. The role coefficient is obtained by pre-defining through a thermal simulation model.

[0090] It should be understood that the independent point temperature signals obtained by the above-mentioned preset temperature measurement algorithm are discrete point measurement results. By fusing the above-mentioned discrete independent point temperature signals, the embodiments of the present invention can obtain continuous temperature field information on the back of the target disk.

[0091] Specifically, a location database is first established, in which each thin-film platinum resistance sensor has its own ID, geometric location coordinates, and role coefficient in the thermal model. It should be noted that the role coefficient can be understood as a coefficient value defined for each thin-film platinum resistance sensor through the existing thermal simulation model. For example: sensor S001, coordinate region: core area, role coefficient: 0.15; sensor S002, coordinate region: edge area, role coefficient: 0.01, and so on.

[0092] S320: The back surface temperature of the target disk is obtained by weighted fusion of the position data information of each thin-film platinum resistance sensor and the temperature signal of the independent point corresponding to the thin-film platinum resistance sensor.

[0093] In this embodiment of the invention, the spatial weight of each thin-film platinum resistance sensor can be determined based on the position data information of each thin-film platinum resistance sensor. Then, the temperature of the back of the target disk can be obtained by weighted fusion of the independent point temperature signal of each thin-film platinum resistance sensor with its spatial weight.

[0094] Specifically, the temperature on the back of the target disk is obtained by weighted fusion of the position data of each thin-film platinum resistance sensor and the temperature signal of the corresponding independent point of the thin-film platinum resistance sensor, such as... Figure 3 As shown, it includes:

[0095] S321. Based on the position data of each thin-film platinum resistance sensor and the independent point temperature signal corresponding to the thin-film platinum resistance sensor, spatial position mapping is performed to obtain spatially mapped temperature signals of multiple spatial points.

[0096] In this embodiment of the invention, the position data information, such as coordinate information, of each thin-film platinum resistance sensor is uniformly calibrated, and the temperature signal of the independent point corresponding to the thin-film platinum resistance sensor is processed by signal filtering. The coordinate position and temperature signal are mapped using the inverse distance weighting method. Specifically, the formula for calculating the spatially mapped temperature signal is T(x,y) = Σ[T_i / d_i^p] / Σ[1 / d_i^p], where T_i represents the temperature signal of the i-th known point, d_i represents the distance from the spatial point (x,y) to the i-th known point, and p represents the power parameter. Finally, the spatially mapped temperature signals of multiple spatial points are obtained.

[0097] S322. Determine the spatial weight information of each thin-film platinum resistance sensor relative to a spatial point based on the role coefficient;

[0098] In this embodiment of the invention, the spatial weight information of each thin-film platinum resistance sensor is calculated based on the role coefficient. The specific calculation formula is as follows:

[0099] W_si = (Importance_i) / (distance(P, Sensor_i) 2 + ε),

[0100] Where W_si represents the spatial weight information of the i-th thin-film platinum resistance sensor, Importance_i represents the role coefficient of the i-th thin-film platinum resistance sensor, distance(P, Sensor_i) represents the distance between the i-th thin-film platinum resistance sensor and the spatial point P, and ε represents a very small positive number.

[0101] S323. The target back surface temperature is obtained by weighted fusion based on the spatial weight information of each thin-film platinum resistance sensor relative to the spatial point and the spatial mapping temperature signal of each spatial point.

[0102] In this embodiment of the invention, the expression for obtaining the spatial weight temperature of a spatial point based on weighted fusion is specifically as follows:

[0103] T_back(x,y)=Σ[W_si * T_i] / ΣW_si,

[0104] Where T_back(x,y) represents the spatial weight temperature of the spatial point (x,y), and T_i represents the spatially mapped temperature signal of the i-th thin-film platinum resistance sensor;

[0105] It should be understood that the target back surface temperature in this embodiment of the invention does not refer to a specific temperature value, but rather to the temperature field data of the target back surface. That is, the target back surface temperature is composed of spatially weighted temperatures of multiple spatial points. It can be understood as a two-dimensional temperature table, which stores the coordinate position of each spatial point and the corresponding spatially weighted temperature. The temperature varies at different locations on the target back surface; for example, the temperature near the focal point is higher than the temperature further away. Therefore, the target back surface temperature in this embodiment of the invention is ultimately the spatially weighted temperature of each spatial point on the target back surface.

[0106] In this embodiment of the invention, the temperature of the back side of the target disk is calculated by reverse engineering based on a pre-trained three-dimensional finite element thermal model of the anode to obtain the temperature of the front side of the target disk, such as... Figure 4 As shown, it includes:

[0107] S410. Determine the inversion operator based on the pre-trained three-dimensional finite element thermal model of the anode;

[0108] Specifically, the pre-trained anode three-dimensional finite element thermal model can be trained based on the anode three-dimensional finite element model and combined with massive training data to obtain the inversion operator.

[0109] In this embodiment of the invention, the real-time monitoring method for the anode target plate temperature further includes the following steps performed before the step of back-calculating the back surface temperature of the target plate based on the pre-trained three-dimensional finite element thermal model of the anode:

[0110] 1) Construct a three-dimensional finite element parametric model of the anode based on the material properties, geometric parameters, and boundary conditions of the anode target disk;

[0111] Specifically, an accurate three-dimensional finite element parametric model of the anode is constructed based on the geometry, material properties, and boundary conditions of the anode target disk.

[0112] 2) Calculate the temperature on the back of the anode target plate based on the simulation results of the heat source on the front of the anode target plate;

[0113] A massive amount of training data pairs are generated. During the training process, the electronic scanning mode is randomly switched as the front heat source. Then, the front simulation is used to calculate the back temperature field from the front heat source, thus forming a dataset.

[0114] 3) The heat source on the front of the anode target plate and the calculated temperature on the back of the anode target plate are used as training datasets to train the three-dimensional finite element parameterized model of the anode, so as to obtain a pre-trained three-dimensional finite element thermal model of the anode.

[0115] The inversion operator is trained using the transfer matrix method of the dimensionality reduction model. First, the back surface temperature T_back(t) is analyzed and extracted to identify the most prominent feature models. These feature models are then linearly combined to approximate the back surface temperature T_back(t). The main feature modes of Q_k (heat source) are also analyzed and extracted. A mapping relationship is learned using linear regression to learn the mapping relationship b=w*a from the modal coefficient vector a of the back surface temperature T_back to the modal coefficient vector b of Q, resulting in the inversion operator W_mij. The measured T_back(t) is projected onto the modal basis to obtain a. The modal coefficients of the front heat source are calculated using b=w*a. Finally, Q and T_Front are reconstructed using b.

[0116] S420. Based on the inversion operator and the temperature of the back side of the target disk, perform back-calculation to obtain the temperature of the front side of the target disk.

[0117] Specifically, the inversion operator W_mij is obtained through the offline training described above. The back-side temperature field T_back (i.e., the target disk back-side temperature obtained after the weighted fusion) acquired in real time is then substituted into the formula to obtain the front-side temperature. For example, the front-side temperature at point j is T_front(j) = Σ[ W_mij * T_back_j ] + C, where W_mij represents the inversion operator, T_back_j represents the back-side temperature measured by sensor j, and C represents the systematic bias and reference temperature. The front-side temperature at point j can be obtained through the above formula. Then, the obtained temperature is filled into the corresponding matrix position to obtain the front-side two-dimensional temperature field.

[0118] In this embodiment of the invention, after obtaining the real-time two-dimensional temperature field of the anode target disk, the real-time two-dimensional temperature field is compared with a preset temperature threshold to determine whether the anode target disk can continue to operate. For example, the preset temperature threshold can be specifically obtained experimentally based on the heat resistance of the anode target disk material, the disk lifespan, and the working efficiency, namely, a first threshold and a second threshold, where the first threshold is less than the second threshold. If the current real-time two-dimensional temperature field is less than the first threshold, the anode target disk can operate normally; if the current real-time two-dimensional temperature field is greater than the first threshold but less than the second threshold, the emission of CT tube X-rays is reduced; if the current real-time two-dimensional temperature field is greater than the second threshold, the anode target disk stops operating, and so on. This step-by-step judgment method enables precise control of the anode target disk.

[0119] In summary, the real-time monitoring method for anode target plate temperature provided by this invention involves deploying a thin-film platinum resistance sensor array on the back of the anode target plate to obtain the array output signal of the thin-film platinum resistance sensor array. The output signal is then used to calculate multiple independent temperature signals at various points on the back of the anode target plate using a temperature measurement algorithm. These independent temperature signals are then weighted and fused to obtain the back temperature of the anode target plate. Finally, the front temperature of the anode target plate is obtained by inverse calculation from the back temperature. This real-time monitoring method for anode target plate temperature can obtain the back temperature of the anode target plate under vacuum, high temperature, and high-speed rotation conditions without destructive experiments, and then inversely calculate the front temperature. Therefore, this real-time monitoring method for anode target plate temperature achieves real-time acquisition of the anode target plate temperature during CT tube equipment operation, and the monitoring method has high accuracy, thereby enabling precise control of radiation emission and ensuring the stability of CT operation.

[0120] As another embodiment of the present invention, a real-time monitoring device 100 for anode target plate temperature is provided to implement the real-time monitoring method for anode target plate temperature described above, wherein, as Figure 5 As shown, it includes:

[0121] The acquisition module 110 is used to acquire the real-time output signal of the thin-film platinum resistance sensor array located on the back of the anode target disk, wherein the thin-film platinum resistance sensor array is formed on the back of the anode target disk based on thin-film deposition and microfabrication processes, the microfabrication process includes at least a patterning process, the thin-film platinum resistance sensor array includes multiple thin-film platinum resistance sensors according to the density distribution of the focal trajectory region on the back of the anode target disk, the density of the focal trajectory region on the back of the anode target disk is from sparse to dense according to the distance of the focal point, and the real-time output signal of the array includes multiple individual output signals corresponding one-to-one with each thin-film platinum resistance sensor;

[0122] The temperature measurement module 120 is used to calculate the real-time output signal of the array according to the preset temperature measurement algorithm to obtain the target disk back array temperature signal. The target disk back array temperature signal includes multiple independent point temperature signals corresponding to each thin-film platinum resistance sensor.

[0123] The weighted fusion module 130 is used to perform weighted fusion on the temperature signal of each independent point in the temperature signal of the target disk back array according to a preset fusion algorithm to obtain the temperature of the target disk back.

[0124] The reverse calculation module 140 is used to reverse calculate the temperature on the back side of the target disk based on the pre-trained three-dimensional finite element thermal model of the anode, so as to obtain the temperature on the front side of the target disk.

[0125] The real-time monitoring device for anode target temperature provided by this invention acquires the real-time output signal of a thin-film platinum resistance sensor array formed on the back of the anode target, and calculates multiple independent point temperature signals on the back of the anode target based on a temperature measurement algorithm. The back temperature of the anode target is obtained by weighted fusion of these multiple independent point temperature signals, and the front temperature of the anode target is then calculated by reverse calculation. This real-time monitoring device for anode target temperature enables the real-time measurement of the back temperature of the anode target, based on thin-film deposition and microfabrication processes to form a thin-film platinum resistance sensor array with a density distribution according to the focal trajectory region on the back of the anode target. The front temperature of the anode target can then be obtained by reverse calculation. This real-time monitoring device for anode target temperature can obtain the back temperature of the anode target under vacuum, high temperature, and high-speed rotation conditions without destructive experiments, and then inversely obtain the front temperature of the target. Therefore, this real-time monitoring device for anode target temperature of the present invention realizes the real-time acquisition of the anode target temperature of the CT tube equipment during operation, and the monitoring method has high accuracy, thereby enabling precise control of the radiation emission and ensuring the stability of CT operation.

[0126] The specific working principle of the real-time monitoring device for the anode target plate temperature of the present invention can be referred to the description of the real-time monitoring method for the anode target plate temperature above, and will not be repeated here.

[0127] As another embodiment of the present invention, a real-time monitoring system 1 for the temperature of an anode target disk is provided, wherein, as Figure 6 As shown, it includes a CT tube device 20 and a host computer 10.

[0128] The CT tube device 20 includes an anode target disk 210 and a sensor signal acquisition device 220. A thin-film platinum resistance sensor array 211 is distributed on the back side of the anode target disk 210. The sensor signal acquisition device 220 is electrically connected to the thin-film platinum resistance sensor array 211 and is capable of acquiring the real-time output signal of the thin-film platinum resistance sensor array 211.

[0129] The host computer 10 includes the real-time monitoring device 100 for the anode target plate temperature mentioned above. The real-time monitoring device 100 for the anode target plate temperature is communicatively connected to the sensor signal acquisition device 220. The real-time monitoring device 100 for the anode target plate temperature can process the real-time output signal of the thin-film platinum resistance sensor array 211 to obtain the front temperature of the target plate.

[0130] Specifically, such as Figure 7The diagram shows a schematic of the CT tube core structure of the CT tube device 20. Specifically, this core structure may include a cathode target disk, an anode target disk, and a bearing. The cathode target disk has a cathode 21 for emitting electrons. The anode target disk includes a front side 22 and a back side 23. A plurality of thin-film platinum resistance sensors 24, arranged according to the density of the focal trajectory region on the back side of the anode target disk, are disposed on the back side 23. These thin-film platinum resistance sensors 24 form the aforementioned thin-film platinum resistance sensor array 211. Additionally, a sensor signal acquisition device 220 is disposed on the bearing 25.

[0131] In embodiments of the present invention, such as Figure 8 As shown, the sensor signal acquisition device 220 includes: a signal preprocessing module 221, a signal conversion module 222, and a signal output module 223. The signal preprocessing module 221 is electrically connected to the signal conversion module 222, and the signal output module 223 is electrically connected to the signal conversion module 222.

[0132] The signal preprocessing module 221 is used to perform signal compensation, amplification and noise filtering on the output signal of each thin-film platinum resistance sensor to obtain a preprocessed signal.

[0133] The signal conversion module 222 is used to perform analog-to-digital conversion on the preprocessed signal to obtain a separate output signal for each thin-film platinum resistance sensor.

[0134] The signal output module 223 is used to form the array real-time output signal of the thin-film platinum resistance sensor array by forming the individual output signals of all thin-film platinum resistance sensors and send it to the host computer.

[0135] Specifically, the sensor signal acquisition device 220 outputs a constant current source through a multiplexer and sequentially passes it through each thin-film platinum resistance sensor. The output signal of the thin-film platinum resistance sensor is transmitted to the high-precision signal conversion module 222 (ADC module) after passing through the signal preprocessing module 221 (filtering, compensation, and amplification). After the signal conversion module 222 completes the analog-to-digital conversion, the signal is emitted through the signal output module 223.

[0136] Specifically, the sensor signal acquisition device 220 described in this embodiment of the invention processes the analog signal output by the sensor, thereby improving signal quality and resisting interference from extreme environments. In this embodiment of the invention, specifically, as... Figure 9As shown, the sensor excitation source employs a low-noise, high-stability constant current source outputting a small 1mA current to avoid significant self-heating effects on the platinum resistance thermometer. Multiple sensors are powered by the same constant current source using a multiplexer, which eliminates excitation errors between different channels. Lead compensation and amplification: A three-wire connection is used for the platinum resistance thermometer, with two wires for current transmission and one for voltage measurement. An instrumentation amplifier with a common-mode rejection ratio (CMRR) >120dB is used to suppress strong common-mode noise from rotating components. The gain is adjusted to amplify the weak voltage difference signal (approximately several hundred millivolts) from the platinum resistance thermometer to a suitable ADC input range. Noise filtering: An active low-pass filter with a cutoff frequency higher than the bandwidth is used before the signal enters the ADC. ADC selection: A 24-bit Σ-Δ ADC is selected. Utilizing its extremely high resolution and built-in digital filtering capabilities, this ADC is suitable for temperature signals and can further suppress periodic noise. A highly stable external reference voltage chip is paired with the ADC to ensure long-term acquisition accuracy.

[0137] Additionally, a high-precision, low-temperature drift reference resistor is integrated onto the circuit board used for rotational testing. This resistor can be configured to periodically switch the signal to the calibration resistor channel to measure its reading. The reference resistor can acquire the gain and offset error of the entire measurement chain in real time at the current temperature. Subsequent dynamic compensation in the host computer can then counteract the effects of device aging and temperature drift.

[0138] In this embodiment of the invention, the sensor signal acquisition device 220 is set at the anode axis position. Specifically, it can be powered by wireless power supply and communicate with the host computer by wireless communication.

[0139] Regarding wireless power supply, a primary excitation coil can be installed on the stationary tube shell, and the primary coil is connected to a low-voltage, high-frequency AC signal. A secondary pickup coil is installed on the rotating anode shaft, which supplies power to the processing system at the rotating end non-contactly through high-frequency electromagnetic induction. Regarding wireless communication, the temperature data can be transmitted through a miniature 2.4GHz radio frequency transmitter chip via a sensor signal acquisition device 220 at the rotating end, and the corresponding receiving chip at the stationary end receives the data.

[0140] Preferably, the sensor signal acquisition device 220 can be implemented using an MCU.

[0141] In summary, the real-time monitoring system for anode target plate temperature provided by this invention employs the aforementioned real-time monitoring device for anode target plate temperature in the host computer. Because a thin-film platinum resistance sensor array with a density distribution according to the focal trajectory region on the back side of the anode target plate can be formed based on thin-film deposition and microfabrication processes, the back side temperature of the anode target plate can be measured in real time. Furthermore, the front side temperature of the anode target plate can be obtained by reverse calculation. This real-time monitoring device for anode target plate temperature can obtain the back side temperature of the anode target plate under vacuum, high temperature, and high-speed rotation conditions without destructive experiments, and then reverse-calculate the front side temperature. Therefore, this real-time monitoring system for anode target plate temperature achieves real-time acquisition of the anode target plate temperature during CT tube equipment operation, and this monitoring method has high accuracy, thereby enabling precise control of radiation emission and ensuring the stability of CT operation.

[0142] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A method for real-time monitoring of the temperature of an anode target disk, characterized in that, include: The real-time output signal of a thin-film platinum resistance sensor array located on the back of an anode target disk is acquired. The thin-film platinum resistance sensor array is formed on the back of the anode target disk based on thin-film deposition and microfabrication processes. The microfabrication process includes at least a patterning process. The thin-film platinum resistance sensor array includes multiple thin-film platinum resistance sensors according to the density distribution of the focal trajectory region on the back of the anode target disk. The density of the focal trajectory region on the back of the anode target disk increases from sparse to dense according to the distance from the focal point. The real-time output signal of the array includes multiple individual output signals corresponding one-to-one with each thin-film platinum resistance sensor. The target disk back array temperature signal is obtained by calculating the real-time output signal of the array according to the preset temperature measurement algorithm. The target disk back array temperature signal includes multiple independent point temperature signals corresponding to each thin-film platinum resistance sensor. The temperature signal of each independent point in the temperature signal of the target disk back array is weighted and fused according to a preset fusion algorithm to obtain the target disk back temperature. The temperature on the back of the target plate is calculated by back-calculating the temperature on the front of the target plate using a pre-trained three-dimensional finite element thermal model of the anode.

2. The method for real-time monitoring of the anode target plate temperature according to claim 1, characterized in that, The temperature signal at each independent point in the target disk back array temperature signal is weighted and fused according to a preset fusion algorithm to obtain the target disk back temperature, including: Obtain the location data information of each thin-film platinum resistance sensor pre-stored in the location database. The location data information includes at least the ID, location coordinates, and role coefficient of the thin-film platinum resistance sensor. The role coefficient is obtained by pre-defining through a thermal simulation model. The back surface temperature of the target disk is obtained by weighted fusion of the position data of each thin-film platinum resistance sensor and the temperature signal of the independent point corresponding to the thin-film platinum resistance sensor.

3. The method for real-time monitoring of the anode target plate temperature according to claim 2, characterized in that, The back surface temperature of the target disk is obtained by weighted fusion of the position data of each thin-film platinum resistance sensor and the temperature signal of the corresponding independent point of the thin-film platinum resistance sensor, including: Spatial position mapping is performed based on the position data of each thin-film platinum resistance sensor and the independent point temperature signal corresponding to the thin-film platinum resistance sensor to obtain spatially mapped temperature signals of multiple spatial points. The spatial weight information of each thin-film platinum resistance sensor relative to a spatial point is determined based on the aforementioned role coefficients; The temperature on the back of the target disk is obtained by weighted fusion of the spatial weight information of each thin-film platinum resistance sensor relative to the spatial point and the spatially mapped temperature signal of each spatial point.

4. The method for real-time monitoring of the anode target plate temperature according to claim 1, characterized in that, The temperature on the back side of the target disk is calculated by reverse engineering based on the pre-trained three-dimensional finite element thermal model of the anode, thus obtaining the temperature on the front side of the target disk, including: The inversion operator is determined based on the pre-trained three-dimensional finite element thermal model of the anode; The front temperature of the target disk is obtained by back-calculation based on the inversion operator and the temperature of the back side of the target disk.

5. The method for real-time monitoring of the anode target plate temperature according to claim 4, characterized in that, The real-time monitoring method for the anode target plate temperature also includes the following steps performed before the step of back-calculating the back surface temperature of the target plate based on the pre-trained three-dimensional finite element thermal model of the anode: A three-dimensional finite element parametric model of the anode is constructed based on the material properties, geometric parameters, and boundary conditions of the anode target disk. The temperature on the back of the anode target plate is calculated based on the simulation results of the heat source on the front of the anode target plate. The heat source on the front of the anode target plate and the calculated temperature on the back of the anode target plate are used as training datasets to train the three-dimensional finite element parameterized model of the anode, thereby obtaining a pre-trained three-dimensional finite element thermal model of the anode.

6. The method for real-time monitoring of the anode target plate temperature according to claim 1, characterized in that, The target disk back array temperature signal is obtained by calculating the real-time output signal of the array according to a preset temperature measurement algorithm, including: The individual output signal corresponding to each thin-film platinum resistance sensor is calculated according to a preset temperature measurement formula to obtain the independent point temperature signal of each thin-film platinum resistance sensor. The expression of the preset temperature measurement formula is as follows: T=(V_t-V_0) / α, Where V_t represents the individual output signal corresponding to each thin-film platinum resistance sensor, V_0 represents the nominal voltage, α represents the temperature coefficient, and α=I(Rx-R0) / Rx, I represents the output current of the constant current source applied to each thin-film platinum resistance sensor, Rx represents the maximum resistance of each thin-film platinum resistance sensor, and R0 represents the nominal resistance.

7. The method for real-time monitoring of the anode target plate temperature according to claim 1, characterized in that, The thin-film platinum resistance sensor array is formed on the back of the anode target disk based on thin-film deposition and microfabrication processes, including: The back surface of the anode target disk is subjected to substrate pretreatment, which includes at least cleaning, polishing and activation processes. An insulating layer is deposited on the back side of the anode target disk after substrate pretreatment; A platinum resistance layer is deposited and patterned on the insulating layer based on the density of the focal trajectory region on the back side of the anode target disk to form a platinum resistance sensor temperature sensing element structure. Leads are formed and bonded on the temperature sensing element structure of the platinum resistance sensor to achieve electrical connection of the platinum resistance sensor. A protective layer is deposited on the platinum resistance sensor to obtain a thin-film platinum resistance sensor array.

8. A real-time monitoring device for the temperature of an anode target plate, used to implement the real-time monitoring method for the temperature of an anode target plate as described in any one of claims 1 to 7, characterized in that, include: The acquisition module is used to acquire the real-time output signal of the thin-film platinum resistance sensor array located on the back of the anode target disk. The thin-film platinum resistance sensor array is formed on the back of the anode target disk based on thin-film deposition and microfabrication processes. The microfabrication process includes at least a patterning process. The thin-film platinum resistance sensor array includes multiple thin-film platinum resistance sensors according to the density distribution of the focal trajectory region on the back of the anode target disk. The density of the focal trajectory region on the back of the anode target disk increases from sparse to dense according to the distance from the focal point. The real-time output signal of the array includes multiple individual output signals corresponding one-to-one with each thin-film platinum resistance sensor. The temperature measurement module is used to calculate the real-time output signal of the array according to the preset temperature measurement algorithm to obtain the target disk back array temperature signal. The target disk back array temperature signal includes multiple independent point temperature signals corresponding to each thin-film platinum resistance sensor. The weighted fusion module is used to perform weighted fusion on the temperature signal of each independent point in the temperature signal of the target disk back array according to a preset fusion algorithm to obtain the temperature of the target disk back. The reverse calculation module is used to reverse calculate the temperature on the back side of the target disk based on the pre-trained three-dimensional finite element thermal model of the anode, so as to obtain the temperature on the front side of the target disk.

9. A real-time monitoring system for the temperature of an anode target disk, characterized in that, Including CT tube equipment and host computer, The CT tube device includes an anode target disk and a sensor signal acquisition device. A thin-film platinum resistance sensor array is distributed on the back of the anode target disk. The sensor signal acquisition device is electrically connected to the thin-film platinum resistance sensor array and is capable of acquiring the real-time output signal of the thin-film platinum resistance sensor array. The host computer includes a real-time monitoring device for the temperature of the anode target plate as described in claim 8. The real-time monitoring device for the temperature of the anode target plate is communicatively connected to the sensor signal acquisition device. The real-time monitoring device for the temperature of the anode target plate can process the real-time output signal of the thin-film platinum resistance sensor array to obtain the front temperature of the target plate.

10. The real-time monitoring device for the temperature of the anode target disk according to claim 9, characterized in that, The sensor signal acquisition device includes: a signal preprocessing module, a signal conversion module, and a signal output module. The signal preprocessing module is electrically connected to the signal conversion module, and the signal output module is electrically connected to the signal conversion module. The signal preprocessing module is used to perform signal compensation, amplification and noise filtering on the output signal of each thin-film platinum resistance sensor to obtain a preprocessed signal. The signal conversion module is used to perform analog-to-digital conversion on the preprocessed signal to obtain a separate output signal corresponding to each thin-film platinum resistance sensor; The signal output module is used to form the array output signal of the thin-film platinum resistance sensor array into a real-time output signal of the thin-film platinum resistance sensor array and send it to the host computer.

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