Vertical transition device from W-band rectangular waveguide to substrate integrated waveguide
By designing a vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide, and utilizing metallized vias, microstrip resonators, and resonators, the problems of transmission loss and impedance matching at high frequencies were solved, achieving low-loss electromagnetic wave conversion and matching.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-23
- Publication Date
- 2026-04-03
AI Technical Summary
As the W-band frequency increases, the existing vertical transition structure becomes less effective, failing to effectively connect the rectangular waveguide and the substrate integrated waveguide, resulting in increased transmission loss and difficulty in impedance matching.
Design a vertical transition device from W-band rectangular waveguide to substrate integrated waveguide. By setting metallized vias, microstrip resonators, first and second resonators, and tuning holes, the vertical to horizontal conversion of electromagnetic waves is achieved, and the resonant frequency and impedance matching are adjusted.
It effectively reduces transmission loss, achieves low-loss conversion and impedance matching of electromagnetic waves, and is suitable for signal transmission in the W-band.
Smart Images
Figure CN121790714A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of microwave vertical transition device technology, and more specifically, to a vertical transition device for W-band rectangular waveguide to substrate integrated waveguide. Background Technology
[0002] Substrate integrated waveguides (SIWs) offer advantages such as low characteristic impedance and low loss, and are easily integrated into microwave planar circuits, thus attracting increasing attention as a microwave transmission structure in recent years. On the other hand, in the millimeter-wave domain, rectangular waveguides remain an important transmission structure in hybrid integrated circuits, characterized by low loss and high power carrying capacity. Therefore, to achieve higher-density circuit integration, it is necessary to design transition structures between different transmission structures to connect different functional modules.
[0003] The W-band (75GHz–110GHz) exhibits relatively low-loss transmission characteristics in atmospheric transmission, making it a promising candidate for applications in communications, radar, imaging, and many other fields. Currently, below the W-band, the common vertical transition structure involves loading an aperture coupling patch at the interface between two waveguides. At the W-band and above, the increased frequency leads to more complex circuit parasitic parameters, degrading the effectiveness of existing low-frequency vertical transition structures and necessitating the introduction of more tuning parameters. Summary of the Invention
[0004] The purpose of this invention is to provide a vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide, which can solve the problem that the vertical transition structure effect deteriorates due to the increase in frequency in the W-band.
[0005] To achieve the above objectives, the present invention adopts the following technical solution:
[0006] This specification provides a vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide, comprising an RF substrate, a first resonator, a second resonator, and a rectangular waveguide;
[0007] The radio frequency substrate includes a first metal layer and a second metal layer disposed opposite to each other, a dielectric layer is disposed between the first metal layer and the second metal layer, the first metal layer is provided with a first window, and the second metal layer is provided with a second window.
[0008] The first resonator has a first resonant cavity with an opening at one end, and the second resonator has a second resonant cavity with an opening at one end. The opening ends of the first resonator and the second resonator are respectively in contact with the first metal layer and the second metal layer. The first resonant cavity can be covered outside the first window, and the second resonant cavity can be covered outside the second window.
[0009] One end of the rectangular waveguide is connected to the side of the second resonator away from the radio frequency substrate, and the waveguide cavity of the rectangular waveguide is in communication with the second resonant cavity;
[0010] The radio frequency substrate has multiple metallized vias, which are arranged circumferentially on three adjacent sides of the first resonator.
[0011] In some embodiments of this specification, a microstrip resonator is disposed on the dielectric layer at the position of the first window, and the microstrip resonator is disposed independently of the first metal layer.
[0012] In some embodiments of this specification, the microstrip resonator is rectangular in shape.
[0013] In some embodiments of this specification, the microstrip resonator is capable of adjusting the resonant frequency of the first resonant cavity.
[0014] In some embodiments of this specification, multiple metallized vias cooperate to form two-layer boundaries, the metallized vias of the two-layer boundaries are staggered, and the two-layer boundaries are arranged sequentially from the RF substrate toward the sidewall toward the first window.
[0015] In some embodiments of this specification, the first resonant cavity is a rectangular resonant cavity.
[0016] In some embodiments of this specification, the second resonant cavity is a rectangular resonant cavity.
[0017] In some embodiments of this specification, the dimension of the second resonator along the length of the RF substrate is greater than the dimension of the rectangular waveguide along the length of the RF substrate.
[0018] In some embodiments of this specification, the walls of the metallized vias are metallized using PCB technology.
[0019] In some embodiments of this specification, the radio frequency substrate has two tuning holes, which are located on one side of the first resonator. The side of the first resonator with the tuning holes is distinct from the three sides with the metallized vias. Based on the above technical solution, this specification achieves the following technical effects:
[0020] The aforementioned vertical transition device from the W-band rectangular waveguide to the substrate integrated waveguide, by setting metallized vias, enables electromagnetic waves to enter from the rectangular waveguide and exit from the substrate integrated waveguide, thereby converting the vertically input electromagnetic waves into horizontally output ones. Furthermore, by setting the aforementioned first and second resonators, transmission loss can be effectively reduced, and impedance matching of electromagnetic wave transmission can be effectively adjusted. Attached Figure Description
[0021] Figure 1This is a schematic diagram of the vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide proposed in this invention.
[0022] Figure 2 This is a schematic diagram showing the position setting of the first window proposed in this invention;
[0023] Figure 3 This is a schematic diagram showing the position setting of the second window proposed in this invention;
[0024] Figure 4 This is a side view schematic diagram of the vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide proposed in this invention.
[0025] Figure 5 The diagram shows the transmission loss and return loss of the vertical transition device from W-band rectangular waveguide to substrate integrated waveguide proposed in this invention.
[0026] Icons: 1. RF substrate; 2. Substrate integrated waveguide; 3. Rectangular waveguide; 4. Microstrip resonator; 5. Metallized via; 6. First resonator; 7. Second resonator; 8. First window; 9. Second window; 10. Tuning hole. Detailed Implementation
[0027] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description and claims. It should be noted that the drawings are all in a very simplified form and are not to a precise scale, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.
[0028] It should be noted that, in order to clearly illustrate the content of this invention, several embodiments are provided to further explain different implementations of the invention. These embodiments are enumerated rather than exhaustive. Furthermore, for the sake of brevity, content mentioned in the preceding embodiments is often omitted in the following embodiments. Therefore, content not mentioned in the later embodiments can be referred to in the preceding embodiments.
[0029] Please refer to Figures 1 to 5 An embodiment of this specification provides a vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide, including an RF substrate 1, a first resonator 6, a second resonator 7, and a rectangular waveguide 3;
[0030] The radio frequency substrate 1 includes a first metal layer and a second metal layer disposed opposite to each other, a dielectric layer is disposed between the first metal layer and the second metal layer, the first metal layer is provided with a first window 8, and the second metal layer is provided with a second window 9.
[0031] The first resonant 6 has a first resonant cavity with an opening at one end, and the second resonant 7 has a second resonant cavity with an opening at one end. The opening ends of the first resonant 6 and the second resonant 7 respectively abut against the first metal layer and the second metal layer. The first resonant cavity can be covered outside the first window 8, and the second resonant cavity can be covered outside the second window 9.
[0032] One end of the rectangular waveguide 3 is connected to the side of the second resonator 7 away from the radio frequency substrate 1, and the waveguide cavity of the rectangular waveguide 3 is in communication with the second resonator cavity;
[0033] The radio frequency substrate 1 has multiple metallized through holes 5, which are arranged circumferentially on three adjacent sides of the first resonator 6.
[0034] In this embodiment, the aforementioned metallized vias 5 sequentially penetrate the first metal layer, the dielectric layer, and the second metal layer. The plurality of metallized vias 5 can cooperate to form an effective metal boundary, confining the electromagnetic signal within the area where the first window 8 is located. Specifically, the metal boundary formed by the plurality of metallized vias 5 cooperates with the first metal layer and the second metal layer to form a rectangular cavity. The rectangular cavity can confine the electromagnetic wave within it, thus forming the substrate integrated waveguide 2.
[0035] In this embodiment, the thickness of the first metal layer and the second metal layer is 20 μm, the thickness of the dielectric layer is 0.127 mm, and the dielectric layer is Rogers 5880.
[0036] In this embodiment, the first resonator 6 has four sides, namely a first side, a second side, a third side, and a fourth side (the first side and the fourth side are arranged opposite to each other, and the second side and the third side are arranged opposite to each other). The direction of electromagnetic wave transmission is from the fourth side toward the circumferential sidewall of the radio frequency substrate 1. No metallized vias 5 are provided in the electromagnetic wave transmission direction. Metallized vias 5 are provided on the first side, the second side, and the third side. The metallized vias 5 provided on the second side and the third side extend to the circumferential sidewall of the radio frequency substrate 1, thereby forming the electromagnetic wave transmission direction.
[0037] Specifically, the vertical transition device from the W-band rectangular waveguide 3 to the substrate integrated waveguide 2, by setting the metallized via 5, enables electromagnetic waves to enter from the rectangular waveguide 3 and exit from the substrate integrated waveguide 2, thereby converting the vertically input electromagnetic waves into horizontally output ones. Moreover, by setting the first resonator 6 and the second resonator 7, the transmission loss can be effectively reduced, and the impedance matching of the electromagnetic wave transmission can be effectively adjusted.
[0038] In this embodiment, a microstrip resonator 4 is disposed on the dielectric layer at the position of the first window 8, and the microstrip resonator 4 is disposed independently of the first metal layer. Specifically, the microstrip resonator 4 is disposed within the first window 8, the length direction of the microstrip resonator 4 is consistent with the length direction of the first window 8, the width of the microstrip resonator 4 is smaller than the width of the first window 8, and the side of the microstrip resonator 4 away from the first resonator 6 abuts against the dielectric layer.
[0039] In this embodiment, the microstrip resonator 4 is rectangular in shape.
[0040] In this embodiment, the microstrip resonator 4 can adjust the resonant frequency of the first resonant cavity.
[0041] In this embodiment, setting the microstrip resonator 4 as a rectangle can further reduce transmission loss and return loss. The size of the microstrip resonator 4 can be determined based on the transmission loss and return loss indicators, and can also be determined in conjunction with the resonant frequency.
[0042] In this embodiment, multiple metallized vias 5 cooperate to form two-layer boundaries. The metallized vias 5 of the two-layer boundaries are staggered and arranged sequentially from the radio frequency substrate 1 toward the sidewall toward the first window 8.
[0043] In other embodiments, the above-mentioned boundary is at least two layers, preferably multiple layers, with the multiple layers staggered, that is, the metallized through-hole 5 of the outer layer is disposed between the two metallized through-holes 5 of the inner layer, thereby effectively enhancing the isolation effect of electromagnetic waves.
[0044] In this embodiment, the first resonant cavity is a rectangular resonant cavity.
[0045] In this embodiment, the second resonant cavity is a rectangular resonant cavity.
[0046] In this embodiment, the first resonant cavity and the second resonant cavity are configured as rectangular resonant cavities, which can effectively adjust the impedance matching of electromagnetic wave transmission.
[0047] In this embodiment, the dimensions of the first resonant cavity and the second resonant cavity can be determined based on the transmission loss, return loss, and impedance of the simulated structure.
[0048] In this embodiment, the dimension of the second resonator 7 along the length direction of the radio frequency substrate 1 is greater than the dimension of the rectangular waveguide 3 along the length direction of the radio frequency substrate 1.
[0049] The opening of the second resonator 7 can be covered by the second metal layer outside the second window 9. The second resonator 7 and the rectangular waveguide 3 can be integrally formed. The second resonant cavity of the second resonator 7 can be connected to the waveguide cavity of the rectangular waveguide 3.
[0050] In this embodiment, the wall of the metallized via 5 is metallized using PCB technology. The microstrip resonator 4 is etched (etched) in the first window 8 to obtain its corresponding shape and size.
[0051] In this embodiment, the RF substrate 1 has two tuning holes 10, which are located on one side of the first resonator 6. The side of the first resonator 6 with the tuning holes 10 is different from the three sides with the metallized vias 5. By setting the tuning holes 10 at specific locations, impedance matching can be adjusted, standing wave ratio can be improved, and transmission loss can be reduced in a coordinated manner.
[0052] In this embodiment, the relative spacing between the two tuning holes 10 is determined based on simulation results, such as impedance and standing wave ratio.
[0053] In this embodiment, the rectangular waveguide 3 is a WR-10 standard waveguide with dimensions of 2.54mm × 1.27mm.
[0054] Specifically, the end of the rectangular waveguide 3 away from the second resonator 7 can input electromagnetic waves. The electromagnetic waves enter the resonant structure composed of the first resonator 6, the second resonator 7 and the tuning hole 10 along the rectangular waveguide 3, and feed out a signal perpendicular to the original electromagnetic wave transmission direction and transmit along the direction of the substrate integrated waveguide 2, thereby achieving the vertical transition effect from the W-band waveguide to the substrate integrated waveguide 2.
[0055] In this embodiment, the above-mentioned vertical transition device, by setting microstrip resonator 4, first resonator 6, second resonator 7, first window 8, second window 9 and tuning hole 10, can effectively reduce transmission loss and expand the transition structure setting method from rectangular waveguide 3 to substrate integrated waveguide 2 in high frequency scenarios.
[0056] In this embodiment, the simulation example is as follows: The vertical transition device from the aforementioned W-band rectangular waveguide 3 to the substrate integrated waveguide 2 was simulated in the full-wave simulation software HFSS. The simulation frequency was set to 75 GHz to 110 GHz. The simulation results of the reflection coefficient (S11) and insertion loss (S21) are as follows: Figure 5 As shown in the figure; simulation results show that the reflection coefficient of the transition structure is better than 17dB and the insertion loss is better than 0.4dB in the W-band (75-110GHz) range, realizing low-loss transition of W-band signals.
[0058] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.
Claims
1. A vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide, characterized in that, It includes an RF substrate, a first resonator, a second resonator, and a rectangular waveguide; The radio frequency substrate includes a first metal layer and a second metal layer disposed opposite to each other, a dielectric layer is disposed between the first metal layer and the second metal layer, the first metal layer is provided with a first window, and the second metal layer is provided with a second window. The first resonator has a first resonant cavity with an opening at one end, and the second resonator has a second resonant cavity with an opening at one end. The opening ends of the first resonator and the second resonator are respectively in contact with the first metal layer and the second metal layer. The first resonant cavity can be covered outside the first window, and the second resonant cavity can be covered outside the second window. One end of the rectangular waveguide is connected to the side of the second resonator away from the radio frequency substrate, and the waveguide cavity of the rectangular waveguide is in communication with the second resonant cavity; The radio frequency substrate has multiple metallized vias, which are arranged circumferentially on three adjacent sides of the first resonator.
2. The vertical transition device from W-band rectangular waveguide to substrate integrated waveguide according to claim 1, characterized in that, A microstrip resonator is disposed on the dielectric layer at the position of the first window, and the microstrip resonator is disposed independently of the first metal layer.
3. The vertical transition device from W-band rectangular waveguide to substrate integrated waveguide according to claim 2, characterized in that, The microstrip resonator is rectangular in shape.
4. The vertical transition device from W-band rectangular waveguide to substrate integrated waveguide according to claim 3, characterized in that, The microstrip resonator can adjust the resonant frequency of the first resonant cavity.
5. The vertical transition device from W-band rectangular waveguide to substrate integrated waveguide according to claim 1, characterized in that, Multiple metallized vias work together to form two-layer boundaries. The metallized vias of the two-layer boundaries are staggered and arranged sequentially from the RF substrate toward the sidewall toward the first window.
6. The vertical transition device from W-band rectangular waveguide to substrate integrated waveguide according to claim 1, characterized in that, The first resonant cavity is a rectangular resonant cavity.
7. The vertical transition device from W-band rectangular waveguide to substrate integrated waveguide according to claim 1, characterized in that, The second resonant cavity is a rectangular resonant cavity.
8. The vertical transition device from W-band rectangular waveguide to substrate integrated waveguide according to claim 7, characterized in that, The dimension of the second resonator along the length of the RF substrate is greater than the dimension of the rectangular waveguide along the length of the RF substrate.
9. The vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide according to claim 1, characterized in that, The walls of the metallized through-holes are metallized using PCB technology.
10. The vertical transition device from a W-band rectangular waveguide to a substrate integrated waveguide according to claim 1, characterized in that, The radio frequency substrate has two tuning holes, which are located on one side of the first resonator. The side of the first resonator with tuning holes is different from the three sides with metallized through holes.