Power module and electronic product

Abstract

The invention provides a power module and an electronic product. The power module comprises a packaging shell; the circuit structure is arranged in the packaging shell, the first to sixth diodes are respectively in one-to-one correspondence and anti-parallel connection with two ends of the first to sixth power tubes, the first to sixth diodes and the first to sixth power tubes form a three-phase full-bridge structure, direct-current anodes of bridge arms are connected together, and direct-current cathodes of the bridge arms are connected together; the first end of the seventh power tube serves as a pre-charging source input end, the second end of the seventh power tube is connected with the direct-current positive electrode, and controllable pre-charging of a bus capacitor connected between the direct-current positive electrode and the direct-current negative electrode in parallel is achieved during working; and the direct current positive electrode, the direct current negative electrode, the output end of each bridge arm, the input end of the pre-charging source and the driving end of each power tube are respectively led out to corresponding pins. According to the power module and the electronic product, the three-phase full bridge and pre-charging functions are integrated, and the integration level is high; in addition, the high-voltage anti-reverse and clamping functions are achieved, the power tube used for achieving the pre-charging function is further protected, and the safety and the system stability can be effectively improved.

Description

Technical Field

[0001] This invention relates to the field of integrated circuits, and in particular to a power module and electronic product. Background Technology

[0002] A power module is a highly integrated power conversion and control component in the field of power electronics. By packaging multiple power semiconductor devices (such as IGBTs, MOSFETs, and diodes) together, it achieves efficient and reliable power conversion and management. Its core value lies in simplifying system design, increasing power density, and enhancing reliability. It is widely used in high-power scenarios such as industry, new energy, automotive, and power.

[0003] Currently, in motor drive applications, including electric vehicles, power modules are only used for power conversion, and their function is relatively simple. Therefore, how to implement more functions within power modules, improve their integration, and enhance the reliability and lifespan of application systems while completing power conversion has become one of the urgent problems to be solved by those skilled in the art.

[0004] It should be noted that the above description of the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of the present invention and facilitating understanding by those skilled in the art. It should not be assumed that the above technical solutions are known to those skilled in the art simply because they have been described in the background section of this invention. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a power module and electronic product to solve the problems of limited functionality of power modules and their impact on system reliability in the prior art.

[0006] To achieve the above and other related objectives, the present invention provides a power module, the power module comprising at least:

[0007] A package housing, a circuit structure disposed within the package housing, and pins disposed on the package housing;

[0008] The circuit structure includes first, second, third, fourth, fifth, sixth, and seventh power transistors, and first, second, third, fourth, fifth, and sixth diodes. The first to sixth diodes are connected in anti-parallel to the two ends of the first to sixth power transistors, forming a three-phase full-bridge structure. In each bridge arm, the first end of the upper transistor is connected together as the DC positive terminal, and the second end of the lower transistor is connected together as the DC negative terminal. The first end of the seventh power transistor serves as the pre-charge power input terminal, and the second end is connected to the DC positive terminal of each bridge arm, used to controllably pre-charge the bus capacitor connected in parallel between the DC positive and DC negative terminals during the startup phase.

[0009] The DC positive, DC negative and output terminals of each bridge arm are led out to the corresponding pins as high voltage terminals, the pre-charge power input terminal is led out to the corresponding pins as a high voltage terminal, and the drive terminals of each power transistor are led out to the corresponding pins as low voltage terminals.

[0010] Optionally, the encapsulation housing is provided with a first base island, a second base island, a third base island, a fourth base island, and a fifth base island;

[0011] The first base island, the second base island, the third base island, and the fourth base island are sequentially arranged on a first side inside the packaging housing along the length direction of the packaging housing; the fifth base island is arranged on a fourth side inside the packaging housing; the first side and the fourth side are arranged opposite to each other;

[0012] The second power transistor and the second diode are disposed on the first base island, the fourth power transistor and the fourth diode are disposed on the second base island, the sixth power transistor and the sixth diode are disposed on the third base island, and the seventh power transistor is disposed on the fourth base island; the first power transistor, the third power transistor and the fifth power transistor are arranged sequentially on the fifth base island along the length direction of the package housing, and the first diode, the third diode and the fifth diode are arranged sequentially on the fifth base island along the length direction of the package housing.

[0013] The first end of each power transistor is located at the bottom and is electrically connected to the corresponding base island; the second end and the drive end of each power transistor are located at the top and are electrically connected to the corresponding port by wire bonding.

[0014] The cathode of each diode is located at the bottom and is electrically connected to the corresponding base island; the anode of each diode is located at the top and is electrically connected to the corresponding port via a wire.

[0015] Alternatively, each base island is electrically connected to a corresponding pin via wire bonding; the package housing is also provided with first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh and twelfth auxiliary base islands;

[0016] The first auxiliary base island and the second auxiliary base island are disposed between the first base island and the fifth base island, and the third auxiliary base island and the fourth auxiliary base island are disposed outside the fifth base island; the first driving terminal of the second power transistor is sequentially wired to the first auxiliary base island and the third auxiliary base island and then led out to the corresponding pin; the second driving terminal of the second power transistor is sequentially wired to the second auxiliary base island and the fourth auxiliary base island and then led out to the corresponding pin;

[0017] The fifth and sixth auxiliary base islands are disposed between the second base island and the fifth base island, and the seventh and eighth auxiliary base islands are disposed outside the fifth base island; the first driving terminal of the fourth power transistor is sequentially wired to the fifth and seventh auxiliary base islands and then led out to the corresponding pin; the second driving terminal of the fourth power transistor is sequentially wired to the sixth and eighth auxiliary base islands and then led out to the corresponding pin;

[0018] The ninth and tenth auxiliary base islands are located between the third and fifth base islands, and the eleventh and twelfth auxiliary base islands are located outside the fifth base island. The first driving terminal of the sixth power transistor is sequentially wired to the ninth and eleventh auxiliary base islands and then led out to the corresponding pin. The second driving terminal of the sixth power transistor is sequentially wired to the tenth and twelfth auxiliary base islands and then led out to the corresponding pin.

[0019] Alternatively, the encapsulation housing may further include thirteenth, fourteenth, fifteenth, sixteenth, seventeenth, eighteenth, nineteenth, twentieth, and twenty-first auxiliary base islands;

[0020] The thirteenth, fourteenth, fifteenth, sixteenth, seventeenth, and eighteenth auxiliary base islands are located outside the fifth base island; the first driving terminal and the second driving terminal of the first power transistor are respectively wired to the thirteenth auxiliary base island and the fourteenth auxiliary base island and then led out to the corresponding pins; the first driving terminal and the second driving terminal of the third power transistor are respectively wired to the fifteenth auxiliary base island and the sixteenth auxiliary base island and then led out to the corresponding pins; the first driving terminal and the second driving terminal of the fifth power transistor are respectively wired to the seventeenth auxiliary base island and the eighteenth auxiliary base island and then led out to the corresponding pins;

[0021] The nineteenth auxiliary base island and the twentieth auxiliary base island are disposed inside the package housing on the side adjacent to the fourth side and close to the fourth base island; the first driving terminal and the second driving terminal of the seventh power transistor are respectively wired to the nineteenth auxiliary base island and the twentieth auxiliary base island and then led out to the corresponding pins;

[0022] The 21st auxiliary base island is located outside the first base island, the second base island, and the third base island; the second ends of the second power transistor, the fourth power transistor, and the sixth power transistor are wired to the 21st auxiliary base island and then led out to their corresponding pins.

[0023] Alternatively, the pins of each high-voltage end are sequentially disposed on the first and second adjacent sides of the package housing, and the pins of each low-voltage end are sequentially disposed on the third and fourth adjacent sides of the package housing.

[0024] Alternatively, each high-voltage terminal may correspond to at least two pins, and / or the pin width of each high-voltage terminal may be greater than the pin width of each low-voltage terminal.

[0025] Alternatively, the pins corresponding to the two drive terminals of the same power transistor are arranged adjacent to each other.

[0026] Alternatively, the power module further includes a seventh diode connected between the seventh power transistor and the DC positive terminal of each bridge arm, wherein the anode of the seventh diode is connected to the second terminal of the seventh power transistor, and the cathode is connected to the DC positive terminal of each bridge arm;

[0027] The seventh diode is disposed at one end of the fifth base island near the seventh power transistor; the cathode of the seventh diode is disposed at the bottom and electrically connected to the fifth base island; the anode of the seventh diode is disposed at the top.

[0028] The package housing also includes a 22nd auxiliary base island, which is located between the 3rd, 4th, and 5th base islands. The anode of the 7th diode is electrically connected to the second terminal of the 7th power transistor via the 22nd auxiliary base island.

[0029] Alternatively, the power module further includes an eighth diode, the cathode of which is connected to the first end of the seventh power transistor, and the anode of which is connected to the second end of the seventh power transistor;

[0030] The eighth diode is disposed on the fourth base island; the cathode of the eighth diode is disposed at the bottom and electrically connected to the fourth base island; the anode of the eighth diode is disposed at the top and electrically connected to the corresponding port by wire bonding.

[0031] Alternatively, the power module further includes a thermistor for detecting the operating ambient temperature of the power module; the thermistor is disposed inside the package housing on the side adjacent to the fourth side and close to the fourth base island.

[0032] Alternatively, the two ends of the thermistor are led out as low-voltage terminals to the corresponding pins and are located on the third or fourth side of the package housing.

[0033] Alternatively, the power module may further include an eighth power transistor and a ninth diode;

[0034] The first end of the eighth power transistor is connected to the negative DC terminal of each bridge arm, and the second end is connected to the anode of the ninth diode; the cathode of the ninth diode is connected to the positive DC terminal of each bridge arm.

[0035] The connection node between the eighth power transistor and the ninth diode is led out as a high-voltage terminal to the corresponding pin and is located on the first or second side of the package housing; the driving terminal of the eighth power transistor is led out as a low-voltage terminal to the corresponding pin and is located on the third or fourth side of the package housing.

[0036] To achieve the above and other related objectives, the present invention also provides an electronic product, which includes at least the power module described above.

[0037] As described above, the power module and electronic product of the present invention have the following beneficial effects:

[0038] The power module and electronic products of this invention integrate three-phase full-bridge and pre-charge functions, with high integration, contributing to system miniaturization; while realizing power conversion, they protect the safety of other devices and components in the system where the power module is located; they also have high voltage reverse protection and clamping functions, further protecting the power transistors used to realize the pre-charge function, which can effectively improve the safety of the power module and the stability of the system.

[0039] The power module and electronic products of the present invention, through the layout of internal components, take into account circuit formation, ensure voltage and current specifications within the smallest possible package, and reduce stray inductance by using the shortest possible drive circuit, thereby achieving stray inductance balance; combined with the external pin arrangement, achieve insulation withstand voltage and heat dissipation, thereby improving performance. Attached Figure Description

[0040] Figure 1 The diagram shown is a schematic diagram of the first circuit structure of the power module of the present invention.

[0041] Figure 2 The diagram shown is a top view of a package housing for the power module of the present invention.

[0042] Figure 3 The diagram shown is a side view of a package housing for the power module of the present invention.

[0043] Figure 4 The diagram shown is a second circuit structure schematic of the power module of the present invention.

[0044] Figure 5 The diagram shown is a third circuit structure diagram of the power module of the present invention.

[0045] Figure 6 The diagram shown is a schematic of the fourth circuit structure of the power module of the present invention.

[0046] Figure 7 The diagram shown is a top view of another packaging housing of the power module of the present invention.

[0047] Figure 8 The diagram shown is a fifth circuit structure schematic of the power module of the present invention.

[0048] Figure 9 The diagram shown is a schematic diagram of the device layout of the present invention.

[0049] Component designation explanation

[0050] 100 - Package housing; 101 - Circuit structure; 1a - Screw hole; 51, 52, 53, 54, 55 - First, second, third, fourth, and fifth base islands; 601, 602, 603, 604, 605, 606, 607, 608, 609, 610, 611, 612, 613, 614, 615, 616, 617, 618, 619, 620, 621, 622, 623, and 624 - First to twenty-fourth auxiliary base islands. Detailed Implementation

[0051] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] Please see Figures 1-9 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0053] To address the aforementioned issues, this invention provides a power module that integrates a circuit pre-charge function, thereby improving integration while ensuring reliability.

[0054] Example 1

[0055] like Figure 1 and Figure 2 As shown, this embodiment provides a power module, which includes:

[0056] The package housing 100, the circuit structure 101 disposed within the package housing 100, and the pins disposed on the package housing 100.

[0057] like Figure 1 As shown, the circuit structure 101 of the power module includes a first power transistor Q1, a second power transistor Q2, a third power transistor Q3, a fourth power transistor Q4, a fifth power transistor Q5, a sixth power transistor Q6, a seventh power transistor Q7, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, and a sixth diode D6.

[0058] Specifically, the first power transistor Q1, the second power transistor Q2, the third power transistor Q3, the fourth power transistor Q4, the fifth power transistor Q5, the sixth power transistor Q6, the first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth diode D5, and the sixth diode D6 constitute a three-phase full-bridge structure. The first power transistor Q1, the third power transistor Q3, and the fifth power transistor Q5 are the upper transistors, and the second power transistor Q2, the fourth power transistor Q4, and the sixth power transistor Q6 are the lower transistors. In this example, each power transistor is implemented using an IGBT (Insulated Gate Bipolar Transistor). At this time, the collector of the first power transistor Q1 is connected to the DC positive terminal, and its emitter is connected to the collector of the second power transistor Q2 and serves as the output terminal of the first bridge arm; the emitter of the second power transistor Q2 is connected to the DC negative terminal; the gate and emitter of the first power transistor Q1 and the second power transistor Q2 serve as their respective driving terminals. The collector of the third power transistor Q3 is connected to the DC positive terminal, and its emitter is connected to the collector of the fourth power transistor Q4, serving as the output terminal of the second bridge arm. The emitter of the fourth power transistor Q4 is connected to the DC negative terminal. The gates and emitters of the third and fourth power transistors Q3 and Q4 serve as their respective driving terminals. The collector of the fifth power transistor Q5 is connected to the DC positive terminal, and its emitter is connected to the collector of the sixth power transistor Q6, serving as the output terminal of the third bridge arm. The emitter of the sixth power transistor Q6 is connected to the DC negative terminal. The gates and emitters of the fifth and sixth power transistors Q5 and Q6 serve as their respective driving terminals. The cathodes of each diode are connected to the collectors of the corresponding power transistors, and the anodes are connected to the emitters of the corresponding power transistors. In practical applications, the first and second terminals can be configured according to the corresponding device type. The first terminal of the upper transistor is the DC positive terminal, the second terminal of the upper transistor is connected to the first terminal of the lower transistor, and the second terminal of the lower transistor serves as the DC negative terminal. Further details are omitted here.

[0059] Specifically, the first terminal of the seventh power transistor Q7 serves as the pre-charge input terminal, the second terminal is connected to the DC positive terminal, and the drive terminal is controlled by an external signal. This pre-charges the external bus capacitor (used to reduce voltage ripple at the inverter input of the power module) connected in parallel between the DC positive and DC negative terminals during the startup phase. This reduces the charging current during the initial charging phase, preventing catastrophic failures caused by sudden current surges, and thus protecting the power module and the devices and components in its system. In this example, the seventh power transistor Q7 is implemented using an IGBT, which offers advantages such as fast switching speed and high control precision. Therefore, the collector of the seventh power transistor Q7 serves as the first terminal, the emitter as the second terminal, and the gate and emitter as the drive terminals.

[0060] It should be noted that in practical applications, the device type of each power transistor can be set as needed, including but not limited to bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) (especially SiCMOSFETs), which will not be elaborated here. When other types of devices are used, the connection relationships of each port should be adjusted accordingly.

[0061] like Figure 2 As shown, the DC positive, DC negative and output terminals of each bridge arm are led out to the corresponding pins as high voltage terminals (e.g., greater than 1000V), the pre-charge power input terminal is led out to the corresponding pin as a high voltage terminal, and the drive terminals of each power transistor are led out to the corresponding pins as low voltage terminals (e.g., less than 20V).

[0062] Specifically, in this embodiment, each high-voltage terminal corresponds to at least two pins to facilitate the passage of large currents. As an example, each high-voltage terminal is connected to three pins, with each pin having a width of 1.15 ± 0.04 mm. In other embodiments, each high-voltage port corresponds one-to-one with a pin, and the pin width corresponding to the high-voltage terminal is greater than the pin width corresponding to the low-voltage terminal, thus achieving the same high-current transmission. Of course, the number of pins corresponding to the high-voltage terminal can be greater than or equal to two, and the width of the pin corresponding to the high-voltage terminal can also be greater than the width of the pin corresponding to the low-voltage terminal; these details will not be elaborated upon here.

[0063] Specifically, to achieve the insulation requirements between the pins corresponding to the high-voltage end and the pins corresponding to the low-voltage end, the pins corresponding to the high-voltage end and the pins corresponding to the low-voltage end are respectively arranged on different sides of the package housing 100. In this embodiment, the pins corresponding to each high-voltage end are sequentially arranged on the first side and the second side of the package housing 100, and the first side and the second side are arranged adjacent to each other; and the distance between the pins corresponding to each high-voltage end meets the high-voltage creepage requirements (as an example, the distance between the pins corresponding to the high-voltage end is not less than 13mm, including but not limited to 15mm and 16mm). The pins corresponding to each low-voltage end are sequentially arranged on the third side and the fourth side of the package housing 100, and the third side and the fourth side are arranged adjacent to each other; and the distance between the pins corresponding to each low-voltage end meets the low-voltage creepage requirements (as an example, to balance creepage distance and chip size, the distance between the pins corresponding to the low-voltage end is greater than or equal to 10mm and less than or equal to 12mm, including but not limited to 10.5mm, 11mm, and 11.5mm).

[0064] More specifically, such as Figure 2 As shown, in this example, the output of the first bridge arm is led out to pins 1, 2, and 3; the output of the second bridge arm is led out to pins 4, 5, and 6; the output of the third bridge arm is led out to pins 7, 8, and 9; the precharge power input is led out to pins 10, 11, and 12; the DC positive terminal is led out to pins 29, 30, and 31; and the DC negative terminal is led out to pins 32, 33, and 34. Pins 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, and 12 are sequentially arranged on the first side of the encapsulation housing 100 (the long side in this example). Pins 1, 2, and 3 form one group; pins 4, 5, and 6 form another; pins 7, 8, and 9 form another; and pins 10, 11, and 12 form yet another. The distance between each group of pins meets the high-voltage creepage requirements. Pins 29, 30, 31, 32, 33, and 34 are sequentially arranged on the second side of the encapsulation housing 100 (the short side in this example). Pins 29, 30, and 31 form one group; and pins 32, 33, and 34 form yet another. The distance between each group of pins meets the high-voltage creepage requirements. In actual use, the relative positions of each group of pins can be adjusted as needed, and are not limited to this embodiment. Figure 2As shown, in this example, the gate drive terminal of the first power transistor Q1 is led out to pin 28, and the emitter drive terminal is led out to pin 27; the gate drive terminal of the second power transistor Q2 is led out to pin 26, and the emitter drive terminal is led out to pin 25; the gate drive terminal of the third power transistor Q3 is led out to pin 24, and the emitter drive terminal is led out to pin 23; the gate drive terminal of the fourth power transistor Q4 is led out to pin 22, and the emitter drive terminal is led out to pin 21; the gate drive terminal of the fifth power transistor Q5 is led out to pin 20, and the emitter drive terminal is led out to pin 19; the gate drive terminal of the sixth power transistor Q6 is led out to pin 18, and the emitter drive terminal is led out to pin 17; the gate drive terminal of the seventh power transistor Q7 is led out to pin 13, and the emitter drive terminal is led out to pin 14. Pins 13 and 14 are sequentially disposed on the third side of the package housing 100 (the short side in this example, opposite to the second side), and the distance between pins 13 and 14 meets the low-voltage creepage requirements. Pins 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, and 28 are sequentially disposed on the fourth side of the package housing 100 (the long side in this example, opposite to the first side), and the distance between each pin meets the low-voltage creepage requirements. Furthermore, the two pins corresponding to the gate drive terminal and emitter drive terminal of the same power transistor are grouped together and arranged adjacently. In actual use, the relative positions between the pins can be adjusted as needed, and are not limited to this embodiment.

[0065] Specifically, such as Figure 2 and Figure 3 As shown, in this example, the length of the enclosure 100 is set to 122.5±0.5mm, and the width is set to 62.5±0.3mm. Screw holes 1a are provided at the four corners of the enclosure 100 for fixing the power module.

[0066] like Figure 9 The diagram shows the device layout within the packaging housing of the present invention. The packaging housing 100 contains a first base island 51, a second base island 52, a third base island 53, a fourth base island 54, and a fifth base island 55. The first base island 51, the second base island 52, the third base island 53, and the fourth base island 54 are sequentially arranged along the length of the packaging housing 100 on a first side within the packaging housing 100, while the fifth base island 55 is arranged on a fourth side within the packaging housing 100.

[0067] Specifically, the second power transistor Q2 and the second diode D2 are disposed on the first base island 51, the fourth power transistor Q4 and the fourth diode D4 are disposed on the second base island 52, the sixth power transistor Q6 and the sixth diode D6 are disposed on the third base island 53, and the seventh power transistor Q7 is disposed on the fourth base island 54. The first power transistor Q1, the third power transistor Q3, and the fifth power transistor Q5 are arranged sequentially on the fifth base island 55 along the length of the package housing 100, and the first diode D1, the third diode D3, and the fifth diode D5 are arranged sequentially on the fifth base island 55 along the length of the package housing 100. In this example, each power transistor and its corresponding diode are aligned in the width direction of the package housing 100 to facilitate wire bonding with the shortest distance. As an example, the fifth base island 55 is divided into two parts connected by leads, wherein the first power transistor Q1, the first diode D1, the third power transistor Q3, and the third diode D3 are disposed in the first part of the fifth base island 55, and the fifth power transistor Q5 and the fifth diode D5 are disposed in the second part of the fifth base island 55.

[0068] Specifically, the first end (collector in this embodiment) of each power transistor is located at the bottom and electrically connected to the corresponding base island, including but not limited to fixing and connecting it using conductive adhesive. The second end (emitter in this embodiment) and driving end (gate driving end and emitter driving end in this embodiment) of each power transistor are located at the top and electrically connected to the corresponding port via wire bonding. The cathode of each diode is located at the bottom and electrically connected to the corresponding base island; fixing and connecting it using conductive adhesive is included but not limited to. The anode of each diode is located at the top and electrically connected to the corresponding port via wire bonding.

[0069] Each port of the device can be electrically connected to the corresponding pin or port by wire bonding and / or auxiliary base island as needed. This includes, but is not limited to, the second end of each power transistor and the anode of the corresponding diode being electrically connected by wire bonding, the upper transistor and the corresponding lower transistor being electrically connected by a lead from the top electrode of the upper transistor to the base island of the lower transistor, and each lead-out port being electrically connected to the corresponding pin by a combination of wire bonding and auxiliary base island.

[0070] Specifically, as an example, such as Figure 9 As shown, the first base island 51 is electrically connected to the corresponding pins 1, 2, and 3 via bonding wires; the second base island 52 is electrically connected to the corresponding pins 4, 5, and 6 via bonding wires; the third base island 53 is electrically connected to the corresponding pins 7, 8, and 9 via bonding wires; the fourth base island 54 is electrically connected to the corresponding pins 10, 11, and 12 via bonding wires; and the fifth base island 55 is electrically connected to the corresponding pins 29, 30, and 31 via bonding wires.

[0071] Specifically, as an example, such as Figure 9As shown, the encapsulation housing 100 also includes a first auxiliary base island 601, a second auxiliary base island 602, a third auxiliary base island 603, a fourth auxiliary base island 604, a fifth auxiliary base island 605, a sixth auxiliary base island 606, a seventh auxiliary base island 607, an eighth auxiliary base island 608, a ninth auxiliary base island 609, a tenth auxiliary base island 610, an eleventh auxiliary base island 611, and a twelfth auxiliary base island 612. The first auxiliary base island 601 and the second auxiliary base island 602 are located between the first base island 51 and the fifth base island 55, and the third auxiliary base island 603 and the fourth auxiliary base island 604 are located outside the fifth base island 55 (close to the fourth side). The first driving terminal (the gate driving terminal in this embodiment) of the second power transistor Q2 is wired to the first auxiliary base island 601, then wired from the first auxiliary base island 601 to the third auxiliary base island 603, and finally wired from the third auxiliary base island 603 to the corresponding pin 26. The second driving terminal (the emitter driving terminal in this embodiment) of the second power transistor Q2 is wired to the second auxiliary base island 602 and the fourth auxiliary base island 604 in sequence and then led out to the corresponding pin 25. The fifth auxiliary base island 605 and the sixth auxiliary base island 606 are located between the second base island 52 and the fifth base island 55, and the seventh auxiliary base island 607 and the eighth auxiliary base island 608 are located outside the fifth base island 55. The first driving terminal of the fourth power transistor Q4 is sequentially wired to the fifth auxiliary base island 605 and the seventh auxiliary base island 607 and then led out to the corresponding pin 22. The second driving terminal of the fourth power transistor Q4 is sequentially wired to the sixth auxiliary base island 606 (in this example, the sixth auxiliary base island 606 is divided into a first part and a second part connected by bonding wire) and the eighth auxiliary base island 608 and then led out to the corresponding pin 21. The ninth auxiliary base island 609 and the tenth auxiliary base island 610 are located between the third base island 53 and the fifth base island 55, while the eleventh auxiliary base island 611 and the twelfth auxiliary base island 612 are located outside the fifth base island 55. The first drive terminal of the sixth power transistor Q6 is sequentially wired to the ninth auxiliary base island 609 and the eleventh auxiliary base island 611, and then led out to the corresponding pin 18. The second drive terminal of the sixth power transistor Q6 is sequentially wired to the tenth auxiliary base island 610 and the twelfth auxiliary base island 612, and then led out to the corresponding pin 17. The specific wiring method is similar to that of the first drive terminal of the second power transistor Q2, and will not be described in detail here. Thus, the low-voltage terminals of each lower transistor can be led out to the fourth side of the package housing 100, thereby meeting the pin arrangement requirements.

[0072] Specifically, as an example, such as Figure 9As shown, the encapsulation housing 100 also includes a thirteenth auxiliary base island 613, a fourteenth auxiliary base island 614, a fifteenth auxiliary base island 615, a sixteenth auxiliary base island 616, a seventeenth auxiliary base island 617, an eighteenth auxiliary base island 618, a nineteenth auxiliary base island 619, a twentieth auxiliary base island 620, and a twenty-first auxiliary base island 621. The thirteenth auxiliary base island 613, the fourteenth auxiliary base island 614, the fifteenth auxiliary base island 615, the sixteenth auxiliary base island 616, the seventeenth auxiliary base island 617, and the eighteenth auxiliary base island 618 are located outside the fifth base island 55. The first driving end and the second driving end of the first power transistor Q1 are wired to the thirteenth auxiliary base island 613 and the fourteenth auxiliary base island 614, respectively, and then led out to the corresponding pins 28 and 27. The first driving end and the second driving end of the third power transistor Q3 are wired to the fifteenth auxiliary base island 615 and the sixteenth auxiliary base island 616, respectively, and then led out to the corresponding pins 24 and 23. The first driving end and the second driving end of the fifth power transistor Q5 are wired to the seventeenth auxiliary base island 617 and the eighteenth auxiliary base island 618, respectively, and then led out to the corresponding pins 20 and 19. Thus, the low-voltage ends of each upper transistor can be led out to the fourth side of the package housing 100, satisfying the pin arrangement requirements. The nineteenth auxiliary base island 619 and the twentieth auxiliary base island 620 are located on the third side of the package housing 100 (the side adjacent to the fourth side and close to the fourth base island 54); the first and second drive terminals of the seventh power transistor Q7 are wired to the nineteenth auxiliary base island 619 and the twentieth auxiliary base island 620 respectively and then led out to the corresponding pins 13 and 14. The twenty-first auxiliary base island 621 (in this example, the twenty-first auxiliary base island 621 is divided into a first part and a second part connected by bonding wire, wherein the part closer to the second side has an L-shaped structure) is located on the outside of the first base island 51, the second base island 52 and the third base island 53 (close to the first side); the second ends of the second power transistor Q2, the fourth power transistor Q4 and the sixth power transistor Q6 are wired to the twenty-first auxiliary base island 621 and then led out to the corresponding pins 32, 33 and 34.

[0073] This invention balances circuit formation and voltage and current specifications through the layout of internal components, while minimizing stray inductance with the shortest possible drive circuit, thus achieving stray inductance balance; and achieves insulation withstand voltage and facilitates heat dissipation in conjunction with the external pin arrangement.

[0074] The power module of this invention integrates a three-phase full-bridge circuit and pre-charge function. Each pin meets the withstand voltage insulation requirements between low-voltage and low-voltage circuits, between high-voltage and high-voltage circuits, and for current carrying capacity. It also takes into account the layout and wiring requirements of each component. The power module of this invention achieves a voltage specification of 1700V in a package with a length of 122.5±0.5mm, a width of 62.5±0.3mm, and pins on all four sides.

[0075] The power module of this invention can achieve centralized control and drive, and while being more efficient and controllable, it further reduces the influence of stray inductance in the system circuit, making the overall system safer.

[0076] Example 2

[0077] like Figure 4 As shown, this embodiment provides a power module, which differs from Embodiment 1 in that the power module also includes a seventh diode D7.

[0078] like Figure 4 As shown, the seventh diode D7 is connected between the seventh power transistor Q7 and the DC positive terminals of each bridge arm. The anode of the seventh diode D7 is connected to the second terminal of the seventh power transistor Q7, and the cathode is connected to the DC positive terminal of each bridge arm. In this example, the second terminal of the seventh power transistor Q7 is the emitter; however, this should be adjusted according to the device type in actual use.

[0079] Specifically, the seventh diode D7 is used to prevent the reverse high voltage on pins 29, 30, and 31 (DC positive terminal) from damaging the seventh power transistor Q7, thereby achieving high voltage reverse protection function and improving the safety and system stability of the power module.

[0080] It should be noted that the other circuit structures are the same as in Embodiment 1, and the pins on the package housing have not changed, so they will not be described in detail here.

[0081] like Figure 9 As shown, in the device layout within the package housing 100, this embodiment, based on Embodiment 1, places the seventh diode D7 on the fifth base island 55, close to the third side (the end of the fifth base island 55 closest to the seventh power transistor Q7). The cathode of the seventh diode D7 is located at the bottom and electrically connected to the fifth base island 55; the anode of the seventh diode D7 is located at the top. A twenty-second auxiliary base island 622 is also provided within the package housing 100, positioned between the third base island 53, the fourth base island 54, and the fifth base island 55. The anode of the seventh diode D7 and the second end of the seventh power transistor Q7 are respectively wired to the twenty-second auxiliary base island 622, achieving electrical connection through the twenty-second auxiliary base island 622. In practical use, any method that enables electrical connection between the anode of the seventh diode D7 and the second end of the seventh power transistor Q7 is applicable to this invention, and will not be elaborated upon here.

[0082] Example 3

[0083] like Figure 5 As shown, this embodiment provides a power module, which differs from Embodiment 1 and Embodiment 2 in that the power module also includes an eighth diode D8.

[0084] like Figure 5As shown, the cathode of the eighth diode D8 is connected to the first terminal of the seventh power transistor Q7, and the anode is connected to the second terminal of the seventh power transistor Q7. In this example, the first terminal of the seventh power transistor Q7 is the collector, and the second terminal is the emitter. In actual use, this should be adjusted according to the device type.

[0085] Specifically, the eighth diode D8 is used to achieve forward overvoltage clamping of pins 10, 11, and 12 (pre-charge power input terminals), thereby achieving the purpose of forward clamping protection for the seventh power transistor Q7 and further improving the safety and system stability of the power module.

[0086] It should be noted that the other circuit structures are the same as in Embodiments 1 and 2, and the pins on the package housing have not changed, so they will not be described in detail here.

[0087] like Figure 9 As shown, in the device layout within the package housing 100, this embodiment, based on Embodiment 2 (or Embodiment 1), places the eighth diode D8 on the fourth base island 54. The cathode of the eighth diode D8 is located at the bottom and electrically connected to the fourth base island 54; the anode of the eighth diode D8 is located at the top and is directly electrically connected to the corresponding port via a bonding wire, or electrically connected to the corresponding port via the twenty-second auxiliary base island 622. In practical use, any method that enables the anode of the eighth diode D8 to be electrically connected to the second terminal of the seventh power transistor Q7 is applicable to this invention, and will not be elaborated here.

[0088] Example 4

[0089] like Figure 6 and Figure 7 As shown, this embodiment provides a power module, which differs from embodiments one to three in that the power module also includes a thermistor NTC for detecting the operating ambient temperature of the power module.

[0090] like Figure 6 As shown, the thermistor NTC is disposed inside the package housing 100 to sense the operating temperature of each power transistor inside the package housing 100. When the operating temperature changes, the resistance value of the thermistor NTC changes accordingly.

[0091] Specifically, such as Figure 7 As shown, the first terminal of the thermistor NTC is led out to pin 15, and the second terminal of the thermistor NTC is led out to pin 16. Pins 15 and 16 can be located on the third or fourth side of the package housing 100; in this example, in order to reduce the chip size and make full use of the space on each side, pins 15 and 16 are located on the third side of the package housing 100.

[0092] It should be noted that the other circuit structures and pin settings are the same as those in Examples 1 to 3, and will not be described in detail here.

[0093] like Figure 9 As shown, in the device layout within the package housing 100, this embodiment, based on Embodiment 3 (or Embodiment 1 or 2), places the thermistor NTC on the third side within the package housing 100 (the side adjacent to the fourth side and close to the fourth base island 54). As an example, the thermistor NTC is disposed on the twenty-third auxiliary base island 623, and its bottom electrode is electrically connected to the twenty-third auxiliary base island 623; the top electrode of the thermistor NTC is connected to the auxiliary base island 624 via a bonding wire; the twenty-third auxiliary base island 623 and the twenty-fourth auxiliary base island 624 are respectively led out to their corresponding pins 15 and 16 via bonding wires. In practical use, any method that can fix and achieve the electrical connection of the thermistor NTC is applicable and is not limited to this embodiment.

[0094] Example 5

[0095] like Figure 8 As shown, this embodiment provides a power module, which differs from embodiments one through four in that the power module further includes an eighth power transistor Q8 and a ninth diode D9.

[0096] like Figure 8 As shown, the first end of the eighth power transistor Q8 is connected to the DC negative terminal of each bridge arm (i.e., led out to pins 32, 33, and 34), and the second end is connected to the anode of the ninth diode D9; the cathode of the ninth diode D9 is connected to the DC positive terminal of each bridge arm (i.e., led out to pins 29, 30, and 31).

[0097] Specifically, in this example, the eighth power transistor Q8 is implemented using an IGBT. Therefore, the first terminal of the eighth power transistor Q8 is the emitter, and the second terminal is the collector. In practical applications, any power switch is applicable to this invention.

[0098] Specifically, in this embodiment, the connection node between the eighth power transistor Q8 and the ninth diode D9 is the high-voltage terminal, led out to pins 35, 36, and 37. The driving terminal of the eighth power transistor Q8 is led out to the corresponding pin. In this example, the eighth power transistor Q8 is implemented using an IGBT, with the gate driving terminal led out to pin 39 and the emitter driving terminal led out to pin 38. Pins 35, 36, and 37 are located on the first or second side of the package housing 100, and the distance between them and the corresponding pins of the other high-voltage terminals meets the high-voltage creepage requirements. Pins 38 and 39 are low-voltage terminals, located on the third or fourth side of the package housing 100, and the distance between them and the corresponding pins of the other low-voltage terminals meets the low-voltage creepage requirements, which will not be elaborated here.

[0099] It should be noted that the other circuit structures and pin settings are the same as those in Examples 1 to 4, and will not be described in detail here.

[0100] The present invention also provides an electronic product including the power module of the present invention for realizing power conversion (e.g., inversion). This electronic product includes, but is not limited to, drive components, motors, or motorized equipment, which will not be described in detail here.

[0101] In summary, the present invention provides a power module and electronic product, comprising: a package housing, a circuit structure disposed within the package housing, and pins disposed on the package housing; wherein, the circuit structure includes first, second, third, fourth, fifth, sixth, and seventh power transistors, and first, second, third, fourth, fifth, and sixth diodes, the first to sixth diodes being respectively connected in anti-parallel to the two ends of the first to sixth power transistors; the first to sixth power transistors and the first to sixth diodes constitute a three-phase full-bridge structure, wherein the first end of the upper transistor in each bridge arm is connected together as a DC positive terminal, and the second end of the lower transistor is connected together as a DC negative terminal; the first end of the seventh power transistor serves as a pre-charge power input terminal, and the second end is connected to the DC positive terminal of each bridge arm, used to controllably pre-charge the bus capacitor connected in parallel between the DC positive terminal and the DC negative terminal during the startup phase; the DC positive terminal, DC negative terminal, and output terminal of each bridge arm are respectively led out to the corresponding pins as high-voltage terminals, the pre-charge power input terminal is led out to the corresponding pins as a high-voltage terminal, and the driving terminal of each power transistor is led out to the corresponding pins as a low-voltage terminal. The power module and electronic products of this invention integrate a three-phase full-bridge circuit and pre-charge function, achieving a high degree of integration. They also feature high-voltage reverse protection and clamping functions, further protecting the power transistors used to implement the pre-charge function, effectively improving safety and system stability. Through the layout of internal components, this invention balances circuit formation and ensures voltage and current specifications within the smallest possible package, while minimizing stray inductance with the shortest possible drive circuit, achieving stray inductance balance. Combined with external pin arrangement, it achieves insulation withstand voltage and heat dissipation, enhancing performance. Therefore, this invention effectively overcomes various shortcomings of existing technologies and possesses high industrial applicability.

[0102] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A power module, characterized in that, The power module includes at least: A package housing, a circuit structure disposed within the package housing, and pins disposed on the package housing; The circuit structure includes first, second, third, fourth, fifth, sixth, and seventh power transistors, and first, second, third, fourth, fifth, and sixth diodes. The first to sixth diodes are connected in anti-parallel to the two ends of the first to sixth power transistors, forming a three-phase full-bridge structure. In each bridge arm, the first end of the upper transistor is connected together as the DC positive terminal, and the second end of the lower transistor is connected together as the DC negative terminal. The first end of the seventh power transistor serves as the pre-charge power input terminal, and the second end is connected to the DC positive terminal of each bridge arm, used to controllably pre-charge the bus capacitor connected in parallel between the DC positive and DC negative terminals during the startup phase. The DC positive, DC negative and output terminals of each bridge arm are led out to the corresponding pins as high voltage terminals, the pre-charge power input terminal is led out to the corresponding pins as a high voltage terminal, and the drive terminals of each power transistor are led out to the corresponding pins as low voltage terminals.

2. The power module according to claim 1, characterized in that: The encapsulation housing is provided with a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; The first base island, the second base island, the third base island, and the fourth base island are sequentially arranged on the first side inside the packaging shell along the length direction of the packaging shell; The fifth base island is disposed on the fourth side inside the packaging housing; the first side is disposed opposite to the fourth side; The second power transistor and the second diode are disposed on the first base island, the fourth power transistor and the fourth diode are disposed on the second base island, the sixth power transistor and the sixth diode are disposed on the third base island, and the seventh power transistor is disposed on the fourth base island; the first power transistor, the third power transistor and the fifth power transistor are arranged sequentially on the fifth base island along the length direction of the package housing, and the first diode, the third diode and the fifth diode are arranged sequentially on the fifth base island along the length direction of the package housing. The first end of each power transistor is located at the bottom and is electrically connected to the corresponding base island; the second end and the drive end of each power transistor are located at the top and are electrically connected to the corresponding port by wire bonding. The cathode of each diode is located at the bottom and is electrically connected to the corresponding base island; the anode of each diode is located at the top and is electrically connected to the corresponding port via a wire.

3. The power module according to claim 2, characterized in that: Each base island is electrically connected to the corresponding pin via wire bonding; the package housing also contains first, second, third, fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh and twelfth auxiliary base islands; The first auxiliary base island and the second auxiliary base island are disposed between the first base island and the fifth base island, and the third auxiliary base island and the fourth auxiliary base island are disposed outside the fifth base island; the first driving terminal of the second power transistor is sequentially wired to the first auxiliary base island and the third auxiliary base island and then led out to the corresponding pin; the second driving terminal of the second power transistor is sequentially wired to the second auxiliary base island and the fourth auxiliary base island and then led out to the corresponding pin; The fifth and sixth auxiliary base islands are disposed between the second base island and the fifth base island, and the seventh and eighth auxiliary base islands are disposed outside the fifth base island; the first driving terminal of the fourth power transistor is sequentially wired to the fifth and seventh auxiliary base islands and then led out to the corresponding pin; the second driving terminal of the fourth power transistor is sequentially wired to the sixth and eighth auxiliary base islands and then led out to the corresponding pin; The ninth and tenth auxiliary base islands are located between the third and fifth base islands, and the eleventh and twelfth auxiliary base islands are located outside the fifth base island. The first driving terminal of the sixth power transistor is sequentially wired to the ninth and eleventh auxiliary base islands and then led out to the corresponding pin. The second driving terminal of the sixth power transistor is sequentially wired to the tenth and twelfth auxiliary base islands and then led out to the corresponding pin.

4. The power module according to claim 2, characterized in that: The encapsulation housing also contains thirteenth, fourteenth, fifteenth, sixteenth, seventeenth, eighteenth, nineteenth, twentieth, and twenty-first auxiliary base islands; The thirteenth, fourteenth, fifteenth, sixteenth, seventeenth, and eighteenth auxiliary base islands are located outside the fifth base island; the first driving terminal and the second driving terminal of the first power transistor are respectively wired to the thirteenth auxiliary base island and the fourteenth auxiliary base island and then led out to the corresponding pins; the first driving terminal and the second driving terminal of the third power transistor are respectively wired to the fifteenth auxiliary base island and the sixteenth auxiliary base island and then led out to the corresponding pins; the first driving terminal and the second driving terminal of the fifth power transistor are respectively wired to the seventeenth auxiliary base island and the eighteenth auxiliary base island and then led out to the corresponding pins; The nineteenth auxiliary base island and the twentieth auxiliary base island are disposed inside the package housing on the side adjacent to the fourth side and close to the fourth base island; the first driving terminal and the second driving terminal of the seventh power transistor are respectively wired to the nineteenth auxiliary base island and the twentieth auxiliary base island and then led out to the corresponding pins; The 21st auxiliary base island is located outside the first base island, the second base island, and the third base island; the second ends of the second power transistor, the fourth power transistor, and the sixth power transistor are wired to the 21st auxiliary base island and then led out to their corresponding pins.

5. The power module according to any one of claims 1-4, characterized in that: The pins of each high-voltage end are sequentially arranged on the first and second adjacent sides of the package housing, and the pins of each low-voltage end are sequentially arranged on the third and fourth adjacent sides of the package housing.

6. The power module according to any one of claims 1-4, characterized in that: Each high-voltage terminal has at least two pins, and / or the pin width of each high-voltage terminal is greater than the pin width of each low-voltage terminal.

7. The power module according to any one of claims 1-4, characterized in that: The pins corresponding to the two drive terminals of the same power transistor are set adjacent to each other.

8. The power module according to any one of claims 2-4, characterized in that: The power module also includes a seventh diode, which is connected between the seventh power transistor and the DC positive terminal of each bridge arm. The anode of the seventh diode is connected to the second terminal of the seventh power transistor, and the cathode is connected to the DC positive terminal of each bridge arm. The seventh diode is disposed at one end of the fifth base island near the seventh power transistor; the cathode of the seventh diode is disposed at the bottom and electrically connected to the fifth base island; the anode of the seventh diode is disposed at the top. The package housing also includes a 22nd auxiliary base island, which is located between the 3rd, 4th, and 5th base islands. The anode of the 7th diode is electrically connected to the second terminal of the 7th power transistor via the 22nd auxiliary base island.

9. The power module according to claim 8, characterized in that: The power module also includes an eighth diode, the cathode of which is connected to the first end of the seventh power transistor, and the anode of which is connected to the second end of the seventh power transistor; The eighth diode is disposed on the fourth base island; the cathode of the eighth diode is disposed at the bottom and electrically connected to the fourth base island; the anode of the eighth diode is disposed at the top and electrically connected to the corresponding port by wire bonding.

10. The power module according to any one of claims 2-4, characterized in that: The power module also includes a thermistor for detecting the operating ambient temperature of the power module; The thermistor is disposed inside the package housing on the side adjacent to the fourth side and close to the fourth base island.

11. The power module topology according to claim 10, characterized in that: The two ends of the thermistor are led out as low-voltage terminals to the corresponding pins and are located on the third or fourth side of the package housing.

12. The power module according to any one of claims 1-4, characterized in that: The power module also includes an eighth power transistor and a ninth diode; The first end of the eighth power transistor is connected to the negative DC terminal of each bridge arm, and the second end is connected to the anode of the ninth diode; the cathode of the ninth diode is connected to the positive DC terminal of each bridge arm. The connection node between the eighth power transistor and the ninth diode is led out as a high-voltage terminal to the corresponding pin and is located on the first or second side of the package housing; the driving terminal of the eighth power transistor is led out as a low-voltage terminal to the corresponding pin and is located on the third or fourth side of the package housing.

13. An electronic product, characterized in that, The electronic product includes at least: a power module as described in any one of claims 1-12.

Images