Half-bridge unit, phase module, power module, double electric control module and traffic equipment

Abstract

The invention provides a half-bridge unit, a phase module, a power module, a double-electric-control module and traffic equipment. The half-bridge unit comprises a bottom layer substrate and an upper layer substrate; wherein the upper-layer substrate is arranged on the upper surface of the bottom-layer substrate in a laminated manner; a plurality of conductive areas are arranged on the upper surface of the bottom layer substrate, the plurality of conductive areas are located outside the projection of the upper layer substrate on the bottom layer substrate, and at least one power device is arranged on the plurality of conductive areas. The half-bridge unit is used for improving the power integration level of the power module.

Description

Technical Field

[0001] This application relates to semiconductor technology, and more particularly to a half-bridge unit, a phase module, a power module, a dual electronic control module, and transportation equipment. Background Technology

[0002] The power module (or power electronics module) is the core of new energy vehicles, serving as the central hub for power conversion and control. It drives vehicle operation through efficient power conversion and control, and its performance directly impacts vehicle power, range, and reliability. With the continuous development of new energy vehicles, higher demands are being placed on the power density of power modules.

[0003] In the prior art, each phase of the power module adopts a half-bridge structure. Each phase of the power module is provided with at least one upper bridge arm device arranged sequentially along a first direction, and at least one lower bridge arm device is provided on one side of the at least one upper bridge arm device along a second direction.

[0004] However, this layout results in a larger power module size, making it difficult to meet the power integration requirements of the power module. Summary of the Invention

[0005] This application provides a half-bridge unit, a phase module, a power module, a dual electronic control module, and traffic equipment to improve the power integration of the power module.

[0006] In a first aspect, embodiments of this application provide a half-bridge unit, including:

[0007] The bottom substrate and the top substrate; wherein...

[0008] The upper substrate is stacked on the upper surface of the lower substrate;

[0009] The upper surface of the bottom substrate is provided with a plurality of conductive regions, which are located outside the projection of the upper substrate onto the bottom substrate, and at least one power device is provided on the plurality of conductive regions.

[0010] Optionally, the at least one power device includes at least one upper bridge arm device and at least one lower bridge arm device, and the plurality of conductive regions include:

[0011] DC+ conductive region, with at least one upper bridge arm device disposed on the upper surface;

[0012] AC conductive region, with at least one lower bridge arm device disposed on the upper surface;

[0013] The upper surface of the upper substrate is provided with:

[0014] The DC-conductive region is electrically connected to the at least one lower bridge arm device.

[0015] Optionally, the at least one upper bridge arm device and the at least one lower bridge arm device are arranged sequentially along a first direction.

[0016] Optionally, the DC+ conductive region includes: a first DC+ region and a second DC+ region; the AC conductive region includes: a first AC region; wherein,

[0017] At least one upper bridge arm device is disposed on the upper surface of the first DC+ region;

[0018] The second DC+ region is located on one side of the first AC region along the second direction, and the projection of the DC- conductive region is located within the second DC+ region, with the second direction perpendicular to the first direction;

[0019] The upper surface of the first AC region is provided with at least one lower bridge arm device, and the first DC+ region and the first AC region are arranged side by side along a first direction.

[0020] Optionally, the DC+ conductive region further includes:

[0021] The third DC+ region is located on the side of the first AC region away from the first DC+ region along the first direction.

[0022] Optionally, the AC conductive region further includes:

[0023] The second AC region is located on one side of the first DC+ region along the second direction, and the second AC region is electrically connected to the at least one upper bridge arm device; wherein the second AC region and the second DC+ region are located on different sides of the first DC+ region along the second direction;

[0024] The third AC region is located on the side of the second AC region away from the second AC region along the first direction.

[0025] Optionally, the DC-conductive region extends along the first direction away from the first DC+ region, towards the third AC region, with a first protruding area:

[0026] Optionally, the upper surface of the upper bridge arm device is connected by a first bonding wire, and the first bonding wire extends to connect to the second AC region;

[0027] The upper surface of the lower bridge arm device is connected by a second bonding wire, and the second bonding wire extends to connect the DC-conductive region.

[0028] Optionally, there may be multiple first bonding wires and multiple second bonding wires.

[0029] Optionally, the plurality of conductive regions further include:

[0030] A first conductive region is located on the side of the first DC+ region away from the second AC region along the second direction, and the first driving source terminal of the at least one upper bridge arm device is provided on the side of the first conductive region away from the second DC+ region along the first direction.

[0031] The second conductive region is located on the side of the first AC region away from the second DC+ region along the second direction, and the second driving source terminal of the at least one lower bridge arm device is provided on the side of the second conductive region away from the second AC region along the first direction.

[0032] Optionally, at least one upper bridge arm gate resistor is disposed on the first conductive region, and the at least one upper bridge arm gate resistor is connected to the at least one upper bridge arm device.

[0033] A lower bridge arm gate resistor is disposed on at least one second conductive region, and the at least one lower bridge arm gate resistor is connected to the at least one lower bridge arm device.

[0034] Optionally, the plurality of conductive regions further include:

[0035] The third conductive region is located on the side of the first conductive region away from the first DC+ region along the first direction, and the third conductive region is provided with the first driving gate terminal of the at least one upper bridge arm device.

[0036] A fourth conductive region is located on the side of the second conductive region away from the first AC region along the first direction, and a second driving gate terminal of the at least one lower bridge arm device is disposed on the fourth conductive region.

[0037] Optionally, the underlying substrate includes:

[0038] First lower metal layer;

[0039] A first insulating layer is disposed on the upper surface of the first lower metal layer;

[0040] A first upper metal layer is disposed on the upper surface of the first insulating layer; the first upper metal layer includes the plurality of conductive regions;

[0041] The upper substrate includes:

[0042] A second insulating layer is disposed on the upper surface of the first upper metal layer;

[0043] The second upper metal layer is disposed on the upper surface of the second insulating layer.

[0044] Optionally, the upper substrate further includes:

[0045] The second lower metal layer is disposed on the upper surface of the first upper metal layer, and the upper surface of the second lower metal layer is provided with a second insulating layer.

[0046] Secondly, embodiments of this application provide a phase module, including at least one half-bridge unit as described above.

[0047] Optionally, when there are multiple half-bridge units, the multiple half-bridge units are connected in parallel.

[0048] Optionally, when the number of half-bridge units is one, the half-bridge units are adjacent on one side along the second direction, and the upper bridge arm device and the lower bridge arm device in the half-bridge unit are symmetrical along the adjacent side of the half-bridge unit.

[0049] Optionally, when the number of half-bridge units is four, the four half-bridge units are arranged sequentially along the second direction.

[0050] Thirdly, embodiments of this application provide a power module, including at least one phase module as described above.

[0051] Optionally, the power module includes a full-bridge power module, which includes a phase module as described above.

[0052] Optionally, the power module includes a three-phase bridge power module, which includes a phase module as described above.

[0053] Fourthly, embodiments of this application provide a dual-control module, including: a drive module, a power generation module, and a boost module; wherein the drive module and the power generation module are both three-phase bridge power modules, and the boost module is a full-bridge power module.

[0054] Fifthly, embodiments of this application provide a transportation device, including: the dual electronic control module as described in claim 1.

[0055] In the half-bridge unit, phase module, power module, dual electronic control module and traffic equipment provided in this application, the embodiments of this application stack the upper substrate on the upper surface of the lower substrate. Compared with the planar structure of the prior art that only uses one substrate, the embodiments of this application can effectively reduce the size of the lower substrate, thereby reducing the size of the half-bridge unit, and further reducing the size of the power module, and effectively improving the power integration of the power module. Attached Figure Description

[0056] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0057] Figure 1 The diagram above exemplarily illustrates the structure of the half-bridge unit provided in an embodiment of this application;

[0058] Figure 2 The image above shows an exemplary side view of a half-bridge unit stack provided in an embodiment of this application;

[0059] Figure 3 An exploded view of the half-bridge unit provided in an embodiment of this application is shown in the figure below;

[0060] Figure 4 The diagram above exemplarily illustrates the structure of the phase module provided in an embodiment of this application;

[0061] Figure 5 The diagram above exemplarily illustrates the structure of a power module provided in an embodiment of this application;

[0062] Figure 6 The diagram above exemplarily illustrates a structural schematic of another power module provided in an embodiment of this application;

[0063] Figure 7 The circuit topology diagram of the half-bridge unit provided in the embodiments of this application is illustrated in the figure below;

[0064] Figure 8 The circuit topology diagram of the full-bridge power module provided in the embodiments of this application is illustrated in the figure below;

[0065] Figure 9 The circuit topology diagram of the three-phase bridge power module provided in the embodiment of this application is illustrated in the figure below;

[0066] Figure 10 The diagram above illustrates the structure of the dual-electric control module provided in an embodiment of this application.

[0067] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0068] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0069] In this application, a module refers to a functional module or a logical module. It can be in software form, where its function is implemented by a processor executing program code; or it can be in hardware form. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. The character " / " generally indicates that the preceding and following related objects have an "OR" relationship.

[0070] First, let me explain the terms used in this application:

[0071] Si (Silicon): Silicon.

[0072] SiC (Silicon Carbide): Silicon carbide.

[0073] MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor): Metal-oxide-semiconductor field-effect transistor.

[0074] IGBT (Insulated-Gate Bipolar Transistor): Insulated-gate bipolar transistor.

[0075] DBC (Direct Bond Copper): A special type of copper-clad laminate, it is formed by directly bonding copper foil to a ceramic substrate at high temperature, and usually adopts a structure of lower copper layer-ceramic layer-upper copper layer.

[0076] AMB (Active Metal Brazing): Metal brazing ceramic substrate.

[0077] The power module (or power electronics module) is the core of new energy vehicles, serving as the central hub for power conversion and control. It drives vehicle operation through efficient power conversion and control, and its performance directly impacts vehicle power, range, and reliability. With the continuous development of new energy vehicles, higher demands are being placed on the power density of power modules.

[0078] In the prior art, the power module includes multiple phase modules, each phase module adopts a half-bridge structure, each phase module is provided with at least one upper bridge arm device arranged sequentially along a first direction, and at least one lower bridge arm device is provided on one side of the at least one upper bridge arm device along a second direction.

[0079] However, this layout results in a larger power module size, making it difficult to meet the power integration requirements of the power module.

[0080] The dual-control module consists of three power modules: a drive module, a generator module, and a boost module, arranged sequentially along the second direction. The boost module and generator module can be collectively referred to as the integrated module. Each power module includes multiple phase modules, and each phase module adopts a half-bridge structure. The dual-control module can uniformly manage the generator and drive motor of the transportation equipment, realizing energy recovery and power distribution. However, it places higher demands on the power integration of each power module. Therefore, compressing the size of each power module is crucial.

[0081] The technical solutions of this application are illustrated below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0082] Figure 1 This is a front view of a half-bridge unit provided in an embodiment of this application. Figure 2 A side view of the half-bridge unit stack provided in an embodiment of this application (showing only the bottom substrate and the top substrate). Figure 1 , Figure 2 As shown, the half-bridge unit 100 provided in this embodiment may include: a bottom substrate 110 and an upper substrate 120; wherein,

[0083] The upper substrate 120 is stacked on the upper surface of the lower substrate 110;

[0084] The upper surface of the bottom substrate 110 is provided with a plurality of conductive regions, which are located outside the projection of the upper substrate 120 onto the bottom substrate 110, and at least one power device is provided on the plurality of conductive regions.

[0085] In practical implementation, the half-bridge unit 100 can be used as the smallest repeating unit in the power module, and each phase module of each power module includes at least one half-bridge unit 100. In the prior art, using the phase module as the smallest repeating unit in the power module results in a high degree of customization because the electrical circuits and the number of components in the phase modules of different power modules vary greatly. This leads to the need to purchase dedicated sintering molds for different power modules and occupy different verification resources. For the dual-control module in the prior art, if any of the electrical circuit designs of the drive module, boost module, and power generation module has a problem, it is necessary to re-mold, sample, and verify, with a rectification cycle of more than six months. This also results in a high degree of customization and does not meet the platform requirements of the vehicle. This solution can reuse the half-bridge unit 100 in different phase modules and different power modules, and can meet different power requirements by adjusting the number of components in the half-bridge unit 100 without changing other layouts of the half-bridge unit 100, greatly reducing the degree of customization and production costs. Furthermore, although the number of components in different power modules varies, the electrical circuits of different bridge arms are exactly the same. Once the electrical circuit passes verification, any subsequent combination of topology or power poses virtually no design risk, effectively saving verification resources and shortening the development cycle.

[0086] In this embodiment, the half-bridge unit 100 adopts a stacked architecture, with an upper substrate 120 stacked on the upper surface of a lower substrate 110. The area of ​​the upper substrate 120 is smaller than that of the lower substrate 110, and the projection of the upper substrate 120 lies within the projection of the lower substrate 110. Power devices are disposed in the conductive areas on the upper surface of the lower substrate 110 where the upper substrate 120 is not placed, and these power devices can be electrically connected to the upper surface of the upper substrate 120. By stacking the upper substrate 120 on the upper surface of the lower substrate 110, compared to the planar structure of the prior art using only one substrate, this embodiment can achieve X and Y space multiplexing, effectively reducing the size of the lower substrate 110, thereby reducing the size of the half-bridge unit 100, and further effectively reducing the size of the power module, thus effectively improving the power integration of the power module.

[0087] Furthermore, in this embodiment, all power devices are disposed on the bottom substrate 110, rather than on the top substrate 120, which can effectively avoid excessive packaging difficulty for the half-bridge unit 100 and facilitate production and use.

[0088] For example, both the bottom substrate 110 and the top substrate 120 can be DBC substrates.

[0089] like Figure 2 As shown, in some embodiments, the underlying substrate 110 includes:

[0090] First lower metal layer 111;

[0091] The first insulating layer 112 is disposed on the upper surface of the first lower metal layer 111;

[0092] A first upper metal layer 113 is disposed on the upper surface of the first insulating layer 112; the first upper metal layer 113 includes a plurality of conductive regions;

[0093] The upper substrate 120 includes:

[0094] The second insulating layer 121 is disposed on the upper surface of the first upper metal layer 113;

[0095] The second upper metal layer 122 is disposed on the upper surface of the second insulating layer 121.

[0096] In a specific implementation, the bottom substrate 110 may consist of a first lower metal layer 111, a first insulating layer 112, and a first upper metal layer 113. The first upper metal layer 113 is divided into multiple conductive regions, on which circuit elements such as power devices can be disposed. Since the upper substrate 120 is disposed on the upper surface of the first upper metal layer 113, the upper substrate 120 may only include a second insulating layer 121 and a second upper metal layer 122, without a second lower metal layer, effectively reducing production costs.

[0097] For example, the first insulating layer 112 and the second insulating layer 121 can be made of Si3N4 material, in which case the bottom substrate 110 and the upper substrate 120 are AMB (Active Metal Brazing Ceramic) substrates.

[0098] In one possible implementation, the upper substrate 120 further includes:

[0099] The second lower metal layer 123 is disposed on the upper surface of the first upper metal layer 113, and the upper surface of the second lower metal layer 123 is provided with a second insulating layer 121.

[0100] In a specific implementation, the upper substrate 120 may also include a second lower metal layer 123, so that the existing metal layer-insulating layer-metal layer architecture substrate can be directly used as the bottom substrate 110 and the upper substrate 120, improving the convenience of production.

[0101] Figure 3 An exploded view of the half-bridge unit provided in an embodiment of this application. Figure 1 , Figure 3 As shown, in some embodiments, at least one power device includes at least one upper bridge arm device 130 and at least one lower bridge arm device 140, and multiple conductive regions include:

[0102] DC+ conductive region 1131, with at least one upper bridge arm device 130 disposed on its upper surface;

[0103] AC conductive region 1132, with at least one lower bridge arm device 140 disposed on its upper surface;

[0104] The upper surface of the upper substrate 120 is provided with:

[0105] The DC-conductive region 1221 is electrically connected to at least one lower bridge arm device 140.

[0106] In a specific implementation, the upper bridge arm device 130 can be placed in the DC+ conductive region, and the lower bridge arm device 140 can be placed in the AC conductive region. After the half-bridge unit 100 is powered on, the current will flow from the DC+ conductive region into the upper bridge arm device 130, then from the upper bridge arm device 130 into the AC conductive region, then from the AC conductive region into the lower bridge arm device 140, and finally from the lower bridge arm device 140 into the DC- conductive region 1221.

[0107] It is understood that the upper bridge arm device 130 refers to the power device located in the upper bridge arm of the half-bridge unit 100, and the lower bridge arm device 140 refers to the power device located in the lower bridge arm of the half-bridge unit 100. The upper bridge arm device 130 and the lower bridge arm device 140 have the same specifications.

[0108] For example, the upper bridge arm device 130 and the upper and lower bridge arm devices 140 can be power devices such as Si IGBT (silicon-based insulated gate bipolar transistor) or SiC MOSFET (silicon carbide metal oxide semiconductor field-effect transistor).

[0109] like Figure 1 , Figure 3 As shown, in one possible implementation, at least one upper bridge arm device 130 and at least one lower bridge arm device 140 are arranged sequentially along a first direction (X direction).

[0110] In a specific implementation, at least one upper bridge arm device 130 and at least one lower bridge arm device 140 can be arranged sequentially along the first direction.

[0111] like Figure 1 , Figure 3 As shown, in one possible implementation, the DC+ conductive region 1131 includes: a first DC+ region 1131a and a second DC+ region 1131b; the AC conductive region 1132 includes: a first AC region 1132a; wherein,

[0112] At least one upper bridge arm device 130 is disposed on the upper surface of the first DC+ region 1131a;

[0113] The second DC+ region 1131b is located on one side of the first AC region 1132a along the second direction (Y direction), and the projection of the DC-conductive region 1221 is located within the second DC+ region 1131b. The second direction is perpendicular to the first direction.

[0114] At least one lower bridge arm device 140 is disposed on the upper surface of the first AC region 1132a, and the first DC+ region 1131a and the first AC region 1132a are arranged side by side along the first direction.

[0115] In a specific implementation, the DC+ conductive region 1131 may include a first DC+ region 1131a and a second DC+ region 1131b, and the AC conductive region 1132 may include a first AC region 1132a. The first DC+ region 1131a and the first AC region 1132a are arranged side by side along a first direction. At least one upper bridge arm device 130 is provided on the upper surface of the first DC+ region 1131a, and at least one lower bridge arm device 140 is provided on the upper surface of the first AC region 1132a, so that the upper bridge arm device 130 and at least one lower bridge arm device 140 can be arranged sequentially along the first direction.

[0116] The second DC+ region 1131b is located on one side of the first AC region 1132a along the second direction, and the projection of the DC- conductive region 1221 is located within the second DC+ region 1131b. The DC+ and DC- terminals of the half-bridge unit 100 are located on the end side of the half-bridge unit 100, therefore, after the half-bridge unit 100 is powered on, Figure 1 The current in the second DC+ region 1131b flows from left to right into each upper bridge arm device 130, and the current in the DC-conducting region 1221 flows from right to left out of the DC- terminal. The current direction in the second DC+ region 1131b is opposite to the current direction in the DC-conducting region 1221. The second DC+ region 1131b and the DC-conducting region 1221 achieve X and Y space multiplexing while the current direction is opposite, which greatly reduces the space while canceling the mutual inductance, achieving both extreme size and reliability.

[0117] like Figure 1 , Figure 3 As shown, in one possible implementation, the DC+ conductive region 1131 further includes:

[0118] The third DC+ region 1131c is located on the side of the first AC region 1132a away from the first DC+ region 1131a along the first direction.

[0119] In a specific implementation, since no devices are placed on the second DC+ region 1131b, the length of the second DC+ region 1131b along the second direction can be set to be relatively small, thereby effectively reducing the size of the half-bridge unit 100. Simultaneously, a third DC+ region 1131c can be placed on the side of the first AC region 1132a away from the first DC+ region 1131a along the first direction, so that the third DC+ region 1131c is located on the side of the half-bridge unit 100 along the first direction, and a DC+ terminal is placed on the third DC+ region 1131c. This terminal lead-out method is consistent with current general platforms and can increase the area of ​​the DC+ region where the DC+ terminal is located, improving the reliability of the DC+ terminal connection.

[0120] like Figure 1 , Figure 3 As shown, in one possible implementation, the AC conductive region 1132 further includes:

[0121] The second AC region 1132b is located on one side of the first DC+ region 1131a along the second direction, and the second AC region 1132b is electrically connected to at least one upper bridge arm device 130; wherein the second AC region 1132b and the second DC+ region 1131b are located on different sides of the first DC+ region 1131a along the second direction.

[0122] The third AC region 1132c is located on the side of the second AC region 1132b away from the second AC region 1132b along the first direction.

[0123] In a specific implementation, a second AC region 1132b can be provided on one side of the first DC+ region 1131a along the second direction for electrical connection with at least one upper bridge arm device 130. After the half-bridge unit 100 is powered on, current flows from the upper surface of the upper bridge arm device 130 into the second AC region 1132b. The second AC region 1132b and the second DC+ region 1131b are located on different sides of the first DC+ region 1131a along the second direction, so that the first DC+ region 1131a, the second DC+ region 1131b, and the third DC+ region 1131c are continuous, and the first AC region 1132a, the second AC region 1132b, and the third AC region 1132c are also continuous, achieving reliable current flow.

[0124] Since no components are mounted on the second AC region 1132b, its length along the second direction can be made smaller, thereby effectively reducing the size of the half-bridge unit 100. Simultaneously, a third AC region 1132c can be positioned on the side of the second AC region 1132b away from it along the first direction. This third AC region 1132c is located on the side of the half-bridge unit 100 away from the third DC+ region 1131c along the first direction, and AC terminals are mounted on the third AC region 1131c. This terminal lead-out method is consistent with current general-purpose platforms and can increase the area of ​​the DC+ region where the DC+ terminals are located, improving the reliability of the DC+ terminal connection.

[0125] For example, the DC-conductive region 1221 extends a first protrusion 1221a along the side away from the first DC+ region 1131a in the first direction toward the third AC region 1132c.

[0126] In a specific implementation, since no devices are placed on the DC-conductive region 1221, the length of the DC-conductive region 1221 along the second direction can be set to be relatively small, thereby effectively reducing the size of the half-bridge unit 100. At the same time, in order to ensure the reliability of the operation of the DC- terminal on one side of the DC-conductive region 1221, a first protruding area 1221a extending toward the third AC region 1132c can be provided on the side of the DC-conductive region 1221 away from the first DC+ region 1131a along the first direction, thereby increasing the area of ​​the end side of the DC-conductive region 1221.

[0127] like Figure 1 , Figure 3 As shown, in one possible implementation, the upper surface of the upper bridge arm device 130 is connected by a first bonding line 131, and the first bonding line 131 extends to connect to the second AC region 1132b.

[0128] The upper surface of the lower bridge arm device 140 is connected by a second bonding wire 141, and the second bonding wire 141 extends to connect to the DC-conductive region 1221.

[0129] In a specific implementation, bonding wires can be used to achieve the electrical connection of the half-bridge unit 100. Specifically, the upper surface of the upper bridge arm device 130 is connected to the second AC region 1132b via the first bonding wire 131, and the upper surface of the lower bridge arm device 140 is connected to the DC-conductive region 1221 via the second bonding wire 141.

[0130] For example, there are multiple first bonding lines 131 and multiple second bonding lines 141.

[0131] For example, the source of the upper bridge arm device 130 is disposed on the upper surface of the upper bridge arm device 130, the source of the lower bridge arm device 140 is disposed on the upper surface of the lower bridge arm device 140, the drain of the upper bridge arm device 130 is disposed on the lower surface of the upper bridge arm device 130, and the drain of the lower bridge arm device 140 is disposed on the lower surface of the lower bridge arm device 140.

[0132] In specific implementations, such as Figure 1 , Figure 3 As shown, multiple first bonding lines 131 and multiple second bonding lines 141 can be set to improve current carrying capacity and enhance the performance of the half-bridge unit 100.

[0133] like Figure 1 , Figure 3 As shown, in some embodiments, the plurality of conductive regions further include:

[0134] The first conductive region 1133 is located on the side of the first DC+ region 1131a away from the second AC region 1132b along the second direction. At least one first driving source terminal 133 of the upper bridge arm device 130 is provided on the side of the first conductive region 1133 away from the second DC+ region 1131b along the first direction.

[0135] The second conductive region 1134 is located on the side of the first AC region 1132a away from the second DC+ region 1131b along the second direction. At least one second drive source terminal 143 of the lower bridge arm device 140 is provided on the side of the second conductive region 1134 away from the second AC region 1132b along the first direction.

[0136] In a specific implementation, a first conductive region 1133 can be provided on the side of the first DC+ region 1131a away from the second AC region 1132b along the second direction. At least one first drive source terminal 133 of an upper bridge arm device 130 can be provided on the side of the first conductive region 1133 away from the second DC+ region 1131b along the first direction. The first drive source terminal 133 is used to drive the source of at least one upper bridge arm device 130. Similarly, a second conductive region 1134 can be provided on the side of the first AC region 1132a away from the second DC+ region 1131b along the second direction. At least one second drive source terminal 143 of a lower bridge arm device 140 can be provided on the side of the second conductive region 1134 away from the second AC region 1132b along the first direction. The second drive source terminal 143 is used to drive the source of at least one lower bridge arm device 140. The terminal lead-out method of this embodiment is consistent with current general platforms, effectively reducing the size of the half-bridge unit 100 while facilitating electrical control design and assembly.

[0137] The terminal lead-out method of this application embodiment is consistent with the current general platform, which effectively reduces the size of the half-bridge unit 100 while facilitating electrical control design and assembly.

[0138] In one possible implementation, at least one upper bridge arm gate resistor 132 is disposed on the first conductive region 1133, and the at least one upper bridge arm gate resistor 132 is connected to at least one upper bridge arm device 130.

[0139] A lower bridge arm gate resistor 142 is disposed on the second conductive region 1134, and at least one lower bridge arm gate resistor 142 is connected to at least one lower bridge arm device 140.

[0140] In a specific implementation, at least one upper bridge arm gate resistor 132 can be provided on the first conductive region 1133, so that at least one upper bridge arm gate resistor 132 can be connected one-to-one with the gate of at least one upper bridge arm device 130; and a lower bridge arm gate resistor 142 can be provided on the second conductive region 1134, so that at least one lower bridge arm gate resistor 142 can be connected one-to-one with the gate of at least one lower bridge arm device 140. The upper bridge arm gate resistor 132 and the lower bridge arm gate resistor 142 are used to provide a defined voltage level to the gate of the device when powered on, and to provide a discharge path for parasitic capacitance when powered off, preventing residual charge from causing accidental conduction during the next power-on.

[0141] In one possible implementation, the multiple conductive regions also include:

[0142] The third conductive region 1135 is located on the side of the first conductive region 1133 away from the first DC+ region 1131a along the first direction, and at least one first driving gate terminal 134 of the upper bridge arm device 130 is provided on the third conductive region 1135.

[0143] The fourth conductive region 1136 is located on the side of the second conductive region 1134 away from the first AC region 1132a along the first direction, and at least one second driving gate terminal 144 of the lower bridge arm device 140 is disposed on the fourth conductive region 1136.

[0144] In a specific implementation, a third conductive region 1135 is provided on the side of the first conductive region 1133 away from the first DC+ region 1131a along the first direction, and a first driving gate terminal 134 of at least one upper bridge arm device 130 is provided on the third conductive region 1135. The first driving gate terminal 134 is used to drive the gate of at least one upper bridge arm device 130. On the side of the second conductive region 1134 away from the first AC region 1132a along the first direction, a second driving gate terminal 147 of at least one lower bridge arm device 140 is provided on the fourth conductive region 1136. The second driving gate terminal 144 is used to drive the gate of at least one lower bridge arm device 140.

[0145] Therefore, a DC+ terminal, a DC- terminal, a first drive source terminal 133, and a first drive gate terminal 134 can be provided on one side of the half-bridge unit 100 along the first direction, and an AC terminal, a second drive source terminal 143, and a second drive gate terminal 144 can be provided on the other side of the half-bridge unit 100 along the first direction, which enables convenient drive control of the device and input / output of current. The terminal lead-out method of this embodiment is consistent with the current general platform, which effectively reduces the size of the half-bridge unit 100 while facilitating electrical control design and assembly.

[0146] The size of the half-bridge unit 100 provided in this application embodiment is greatly reduced, with the X-direction dimension reduced to 63.8mm and the Y-direction dimension reduced to 16mm, effectively improving the integration of the half-bridge unit 100 and the entire power module.

[0147] This application also provides a phase module 10, including at least one half-bridge unit 100.

[0148] Figure 4 This is a schematic diagram of the phase module provided in an embodiment of this application. Figure 4 As shown, each phase module 10 corresponds to one phase of the power module, and each phase module 10 includes at least one half-bridge unit 100. The half-bridge unit 100 serves as the minimum repeating unit of the phase module 10 and the power module, which can effectively improve the customization of the phase module 10 and the power module.

[0149] In one possible implementation, when there are multiple half-bridge units 100, these multiple half-bridge units 100 are connected in parallel.

[0150] In a specific implementation, phase module 10 may include one or more half-bridge units 100. When the power requirement of phase module 10 is high, multiple half-bridge units 100 can be set in parallel; when the power requirement of phase module 10 is low, a single half-bridge unit 100 can be set. In practical applications, different power requirements can also be met by adjusting the number of devices in each half-bridge unit 100.

[0151] In one possible implementation, when there are two half-bridge units 100, the two half-bridge units 100 are adjacent to each other on one side along the second direction, and the upper bridge arm device 130 and the lower bridge arm device 140 in the two half-bridge units 100 are symmetrical along the adjacent side of the two half-bridge units 100.

[0152] Figure 4 The phase module 10 includes four half-bridge units 100, each half-bridge unit 100 including three upper bridge arm devices 130 and three lower bridge arm devices 140. The dimension x1 in the X direction can be reduced to 63.5mm, and the dimension y1 in the Y direction can be reduced to 52.9mm, greatly improving the integration.

[0153] like Figure 4 As shown, in one possible implementation, when the number of half-bridge units 100 is 4, the 4 half-bridge units 100 are arranged sequentially along the second direction.

[0154] In the specific implementation, the four sequentially arranged half-bridge units 100 are referred to as the first half-bridge unit, the second half-bridge unit, the third half-bridge unit, and the fourth half-bridge unit. The upper and lower bridge arm devices in the first and second half-bridge units are mirror-symmetrical along the adjacent sides of these two half-bridge units. Similarly, the upper and lower bridge arm devices in the third and fourth half-bridge units are mirror-symmetrical along the adjacent sides of these two half-bridge units. Furthermore, the upper and lower bridge arm devices in the first and second half-bridge units are mirror-symmetrical with the upper and lower bridge arm devices in the third and fourth half-bridge units along the adjacent sides of these two half-bridge units.

[0155] Figure 5 This is a schematic diagram of the power module provided in an embodiment of this application. Figure 6 This is a schematic diagram of another power module provided in an embodiment of this application. Figure 5 , Figure 6 As shown, this application embodiment also provides a power module 1, including at least one phase module 10 as claimed in any one of claims 21-23.

[0156] In a specific implementation, the power module 1 includes at least one phase module 10, and each phase module 10 corresponds to one phase of the power module 1.

[0157] Figure 7 The circuit topology diagram of the half-bridge unit provided in the embodiments of this application is shown. Figure 8 The circuit topology diagram of the full-bridge power module provided in the embodiments of this application is shown below. Figure 7 , Figure 8 As shown, in one possible implementation, the power module includes a full-bridge power module, which includes two phase modules.

[0158] Figure 9 This is a circuit topology diagram of a three-phase bridge power module provided in an embodiment of this application. (See diagram below.) Figure 9 As shown, in one possible implementation, the power module includes a three-phase bridge power module, which includes three phase modules.

[0159] Figure 5 , Figure 6 The power modules shown are all three-phase bridge power modules. Figure 5 The power module 1 shown includes three phase modules 10, each phase module includes one half-bridge unit 100, and each half-bridge unit 100 includes four upper bridge arm devices and four lower bridge arm devices, which can support four cores in parallel. The dimension x2 in the X direction can be reduced to 63.5 mm, and the dimension y2 in the Y direction can be reduced to 46.8 mm. Figure 6 The power module 1 shown includes three phase modules 10, each phase module includes four half-bridge units 100, and each half-bridge unit 100 includes three upper bridge arm devices and three lower bridge arm devices, which can support 12-core parallel connection. After packaging, the size x3 in the X direction of the power module 1 can be reduced to 92mm, and the size y3 in the Y direction can be reduced to 155mm. The output current capacity can reach more than 600A. Compared with power modules of similar size in the prior art, current sharing and crosstalk are also greatly optimized, which greatly improves performance and reliability.

[0160] It is understood that this description is based on the example of each half-bridge unit including one upper bridge arm device and one lower bridge arm device, and each phase module including one half-bridge unit. In actual applications, the number of devices in each half-bridge unit and the number of phase modules in the power module can be configured according to production needs, and this does not constitute a limitation on the technical solution of the embodiments of this application.

[0161] Figure 10 This is a schematic diagram of the structure of the dual-electric control module provided in an embodiment of this application. Figure 10 As shown in the embodiment of this application, a dual-control module is also provided, including: a drive module, a power generation module, and a boost module; wherein, the drive module and the power generation module are both three-phase bridge power modules, and the boost module is a full-bridge power module.

[0162] In its implementation, the dual-control module includes three power modules. Figure 10From left to right, the modules are the drive module, the power generation module, and the boost module. The drive module and the power generation module each consist of three phase modules, and the boost module also consists of three phase modules. This dual-control module is composed of a 4-core board (4 upper bridge arm devices and 4 lower bridge arm devices) half-bridge unit 100 through various design variations. While achieving maximum integration, the size is also minimized. After packaging, the X-axis dimension (x4) of this dual-control module can be reduced to 90mm, the Y-axis dimension (y4) can be reduced to 220mm, and the height perpendicular to the X and Y directions is 22mm. Compared to existing dual-control modules, the volume is reduced by more than 25%, while module reliability is also improved, and the development and verification cycle is shortened.

[0163] This application also provides a transportation device, including: the dual electronic control module as described above.

[0164] By using the dual-electric control module provided in the embodiments of this application, the power domain control of traffic equipment can be significantly improved in terms of peak power, power density, and efficiency.

[0165] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0166] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A half-bridge unit (100), characterized in that, include: A bottom substrate (110) and an upper substrate (120); wherein, The upper substrate (120) is stacked on the upper surface of the lower substrate (110); The upper surface of the bottom substrate (110) is provided with a plurality of conductive regions, the plurality of conductive regions being located outside the projection of the upper substrate (120) onto the bottom substrate (110), and at least one power device being provided on the plurality of conductive regions.

2. The half-bridge unit (100) according to claim 1, characterized in that, The at least one power device includes at least one upper bridge arm device (130) and at least one lower bridge arm device (140), and the plurality of conductive regions include: DC+ conductive region (1131), with at least one upper bridge arm device (130) disposed on the upper surface; AC conductive region (1132), with at least one lower bridge arm device (140) disposed on the upper surface; The upper surface of the upper substrate (120) is provided with: The DC-conductive region (1221) is electrically connected to the at least one lower bridge arm device (140).

3. The half-bridge unit (100) according to claim 2, characterized in that, The at least one upper bridge arm device (130) and the at least one lower bridge arm device (140) are arranged sequentially along the first direction.

4. The half-bridge unit (100) according to claim 3, characterized in that, The DC+ conductive region (1131) includes: a first DC+ region (1131a) and a second DC+ region (1131b); the AC conductive region (1132) includes: a first AC region (1132a); wherein, At least one upper bridge arm device (130) is disposed on the upper surface of the first DC+ region (1131a); The second DC+ region (1131b) is located on one side of the first AC region (1132a) along the second direction, and the projection of the DC-conductive region (1221) is located within the second DC+ region (1131b), with the second direction being perpendicular to the first direction; The upper surface of the first AC region (1132a) is provided with at least one lower bridge arm device (140), and the first DC+ region (1131a) and the first AC region (1132a) are arranged side by side along the first direction.

5. The half-bridge unit (100) according to claim 4, characterized in that, The DC+ conductive region (1131) further includes: The third DC+ region (1131c) is located on the side of the first AC region (1132a) away from the first DC+ region (1131a) along the first direction.

6. The half-bridge unit (100) according to claim 5, characterized in that, The AC conductive region (1132) further includes: The second AC region (1132b) is located on one side of the first DC+ region (1131a) along the second direction, and the second AC region (1132b) is electrically connected to the at least one upper bridge arm device (130); wherein the second AC region (1132b) and the second DC+ region (1131b) are located on different sides of the first DC+ region (1131a) along the second direction; The third AC region (1132c) is located on the side of the second AC region (1132b) away from the second AC region (1132b) along the first direction.

7. The half-bridge unit (100) according to claim 6, characterized in that, The DC-conductive region (1221) extends a first protruding region (1221a) along the first direction away from the first DC+ region (1131a) toward the third AC region (1132c).

8. The half-bridge unit (100) according to claim 6, characterized in that, The upper surface of the upper bridge arm device (130) is connected by a first bonding line (131), and the first bonding line (131) extends to connect the second AC region (1132b). The upper surface of the lower bridge arm device (140) is connected by a second bonding wire (141), and the second bonding wire (141) extends to connect the DC-conductive region (1221).

9. The half-bridge unit (100) according to claim 8, characterized in that, The number of the first bonding line (131) and the second bonding line (141) are both multiple.

10. The half-bridge unit (100) according to claim 6, characterized in that, The plurality of conductive regions further include: The first conductive region (1133) is located on the side of the first DC+ region (1131a) away from the second AC region (1132b) along the second direction. The first driving source terminal (133) of the at least one upper bridge arm device (130) is provided on the side of the first conductive region (1133) away from the second DC+ region (1131b) along the first direction. The first direction and the second direction are perpendicular. The second conductive region (1134) is located on the side of the first AC region (1132a) away from the second DC+ region (1131b) along the second direction, and the second driving source terminal (143) of the at least one lower bridge arm device (140) is provided on the side of the second conductive region (1134) away from the second AC region (1132b) along the first direction.

11. The half-bridge unit (100) according to claim 10, characterized in that, At least one upper bridge arm gate resistor (132) is disposed on the first conductive region (1133), and the at least one upper bridge arm gate resistor (132) is connected to the at least one upper bridge arm device (130); A lower bridge arm gate resistor (142) is disposed on at least one second conductive region (1134), and the at least one lower bridge arm gate resistor (142) is connected to the at least one lower bridge arm device (140).

12. The half-bridge unit (100) according to claim 11, characterized in that, The plurality of conductive regions further include: The third conductive region (1135) is located on the side of the first conductive region (1133) away from the first DC+ region (1131a) along the first direction, and the first driving gate terminal (134) of the at least one upper bridge arm device (130) is disposed on the third conductive region (1135). The fourth conductive region (1136) is located on the side of the second conductive region (1134) away from the first AC region (1132a) along the first direction, and the fourth conductive region (1136) is provided with the second driving gate terminal (144) of the at least one lower bridge arm device (140).

13. The half-bridge unit (100) according to any one of claims 1-12, characterized in that, The underlying substrate (110) includes: First lower metal layer (111); A first insulating layer (112) is disposed on the upper surface of the first lower metal layer (111); A first upper metal layer (113) is disposed on the upper surface of the first insulating layer (112); the first upper metal layer (113) includes the plurality of conductive regions; The upper substrate (120) includes: A second insulating layer (121) is disposed on the upper surface of the first upper metal layer (113); The second upper metal layer (122) is disposed on the upper surface of the second insulating layer (121).

14. The half-bridge unit (100) according to claim 13, characterized in that, The upper substrate (120) further includes: A second lower metal layer (123) is disposed on the upper surface of the first upper metal layer (113), and a second insulating layer (121) is disposed on the upper surface of the second lower metal layer (123).

15. A phase module (10), characterized in that, It includes at least one half-bridge unit (100) as described in any one of claims 1-14.

16. The phase module (10) according to claim 15, characterized in that, When there are multiple half-bridge units (100), the multiple half-bridge units (100) are connected in parallel.

17. The phase module (10) according to claim 16, characterized in that, When there are two half-bridge units (100), the two half-bridge units (100) are adjacent to each other on one side of the second direction, and the upper bridge arm device (130) and the lower bridge arm device (140) in the two half-bridge units (100) are symmetrical along the adjacent sides of the two half-bridge units (100).

18. The phase module (10) according to claim 16, characterized in that, When the number of half-bridge units (100) is 4, the 4 half-bridge units (100) are arranged sequentially along the second direction.

19. A power module (1), characterized in that, Includes at least one phase module (10) as described in any one of claims 15-18.

20. The power module (1) according to claim 19, characterized in that, The power module (1) includes a full-bridge power module, which includes two phase modules (10) as described in any one of claims 15-18.

21. The power module (1) according to claim 19, characterized in that, The power module (1) includes a three-phase bridge power module, which includes three phase modules (10) as described in any one of claims 15-18.

22. A dual-electric control module, characterized in that, include: The system comprises a drive module, a power generation module, and a boost module; wherein the drive module and the power generation module are both three-phase bridge power modules, and the boost module is a full-bridge power module.

23. A transportation device, characterized in that, include: The dual electronic control module as described in claim 21.

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