Air exhaust component and semiconductor film deposition equipment

Abstract

The embodiment of the invention provides an air exhaust component and semiconductor thin film deposition equipment. The air exhaust component comprises a pressing ring and a plurality of functional check blocks. The pressing ring is arranged on the functional stop block in a pressing mode. The plurality of functional check blocks are arranged in the circumferential direction of the pressing ring, and all the functional check blocks are detachably arranged on the pressing ring; each functional check block is provided with a thickness direction limited in the radial direction of the pressing ring and is provided with an air exhaust hole penetrating through the thickness direction, and the pressing ring and the functional check blocks form a first air exhaust ring of the air exhaust component; wherein the at least two functional check blocks have different parameters, and the parameters comprise the thickness size and / or the surface performance.

Description

Technical Field

[0001] This application relates to the field of semiconductor thin film deposition technology, and more specifically, to a vacuum component and a semiconductor thin film deposition apparatus. Background Technology

[0002] Low-pressure chemical vapor deposition (LPCVD) is widely used in the fabrication of high-precision semiconductor devices. During the LPCVD process, the temperature field distribution within the reaction chamber directly affects process parameters such as film deposition rate, film thickness uniformity, and doping concentration consistency. Therefore, controlling the temperature field within the reaction chamber is crucial for ensuring the quality of the LPCVD process.

[0003] Existing air extraction components often employ homogeneous structural designs, making it difficult to adapt and optimize them to meet the temperature field control requirements of the reaction chamber. This results in uneven airflow disturbances and uneven temperature distribution within the chamber, affecting the stability of the LPCVD process.

[0004] In view of this, it is necessary to provide a new technical solution to solve the above-mentioned technical problems existing in the prior art. Summary of the Invention

[0005] The purpose of this application is to provide an air extraction component and a semiconductor thin film deposition apparatus.

[0006] According to a first aspect of this application, a vacuuming component is provided. The vacuuming component includes: a pressure ring and a plurality of functional blocks; The pressure ring is pressed against the functional stop block; The plurality of said functional blocks are arranged circumferentially along the pressure ring and each of said functional blocks is detachably disposed on the pressure ring; Each functional stop has a thickness direction defined radially along the pressure ring and is provided with a first air extraction hole penetrating the thickness direction. The pressure ring and the functional stop constitute the first air extraction ring of the air extraction component. At least two of the functional blocks have different parameters, including thickness and / or surface properties.

[0007] Optionally, the thickness difference between the functional blocks of different thicknesses ranges from 0.1mm to 0.5mm.

[0008] Optionally, the thickness of the functional stop block ranges from 0.5mm to 20mm.

[0009] Optionally, at least two of the functional blocks may be made of different materials.

[0010] Optionally, the surface properties of the functional stop can be adjusted through a surface treatment process.

[0011] Optionally, the air extraction component further includes a functional component, the coefficient of thermal expansion of which is higher than that of the functional block, and the functional component has a through hole extending through its thickness direction; The functional component is mounted on the side surface of the functional block facing the heating chuck via a detachable assembly structure.

[0012] Optionally, the air extraction component further includes an annular base, and the ends of the plurality of functional blocks away from the pressure ring are detachably disposed on the annular base; The annular base has a second air extraction hole, which is connected to the first air extraction hole of the functional block. The annular base constitutes the second air extraction ring of the air extraction component.

[0013] Optionally, the annular base is provided with a first mating part along the circumference, and each of the functional blocks is provided with a second mating part. The functional blocks are disposed on the annular base through the first mating part and the second mating part.

[0014] Optionally, each of the functional blocks is provided with a third mating part on its outer surface opposite to the heating chuck; The pressure ring is pressed against the functional stop block through the third mating part.

[0015] Optionally, each functional stop has a length direction defined along the circumference of the pressure ring, and each functional stop is provided with a guide assembly structure; The guide assembly structure includes: A guide slot is formed on the first side of the functional block, and the groove of the guide slot extends along the length direction of the functional block. A guide protrusion is formed on the second side of the functional block, and the extension of the guide protrusion extends along the length direction of the functional block. The first side and the second side are opposite sides of the functional block along the length direction.

[0016] A second aspect of this application also provides a semiconductor thin film deposition apparatus. The semiconductor thin film deposition apparatus includes a heated chuck and a vacuum member as described in the first aspect, the vacuum member being configured to surround the outer periphery of the heated chuck disposed within a reaction chamber.

[0017] One technical advantage of this application is: In the technical solution provided in this application embodiment, the evacuation component includes a pressure ring and functional blocks. The pressure ring and functional blocks constitute the first evacuation ring of the evacuation component. The functional blocks are detachably mounted to the pressure ring, and each functional block has differentiated parameters. By replacing functional blocks with different parameters, the gap between the functional blocks and the heating chuck can be flexibly adjusted, and / or the heat reflection effect of the functional blocks can be controlled, thereby achieving local control of the temperature field within the reaction chamber. This effectively improves the adjustment accuracy of process parameters such as deposition rate, film uniformity, and doping concentration, meeting the requirements of modern semiconductor manufacturing for refined control of LPCVD processes and expanding the application scenarios of LPCVD processes in high-precision device fabrication.

[0018] Other features and advantages of this specification will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0019] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of this specification and, together with their description, serve to explain the principles of this specification.

[0020] Figure 1 The diagram shown is a structural diagram of the air extraction component provided in an embodiment of this application.

[0021] Figure 2 The diagram shown is a structural diagram of a functional block provided in an embodiment of this application.

[0022] Figure 3 The diagram shown is a structural diagram of the reaction chamber of a semiconductor thin film deposition apparatus provided in an embodiment of this application.

[0023] Figure 4 As shown Figure 3 Enlarged structural view of the connection between the intermediate pressure ring and the functional stop block (point B), and the connection between the annular base and the functional stop block (point A).

[0024] Explanation of reference numerals in the attached figures: 1. Air extraction component; 10. Annular base; 11. Functional stop block; 12. Pressure ring; 101. First mating part; 110. First air extraction port; 111. Second mating part; 112. Guide assembly structure; 1121. Guide groove; 1122. Guide protrusion; 113. Third mating part; 102. Second air extraction port; 2. Functional components; 21. Through holes; 3. Heating chuck. Detailed Implementation

[0025] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0026] The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the scope of this application and its application or use.

[0027] Technologies and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such technologies and equipment should be considered part of the specification.

[0028] In all the examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.

[0029] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0030] The technical solution of this application will be further described below with reference to the embodiments and accompanying drawings.

[0031] Existing vacuum components cannot achieve temperature field layout adjustment, which leads to insufficient adjustment precision of process parameters such as deposition rate, film uniformity, and doping concentration. This makes it difficult to meet the stringent requirements of modern semiconductor manufacturing for fine process control, ultimately limiting the application effect and adaptability of LPCVD process in high-precision semiconductor device fabrication scenarios.

[0032] Based on this, this application provides a vacuuming component for use in LPCVD processes. During actual process implementation, when the heating chuck moves to a preset working position, the vacuuming component can surround the outer periphery of the heating chuck within the reaction chamber. This application achieves precise local control of the heating chuck's temperature field through targeted structural design of the functional blocks, thereby overcoming the shortcomings of existing technologies.

[0033] Reference Figures 1-4 The air extraction component 1 includes: a pressure ring 12 and a plurality of functional blocks 11; the pressure ring 12 is pressed against the functional blocks 11; The plurality of functional blocks 11 are arranged circumferentially along the pressure ring 12 and each of the functional blocks 11 is detachably disposed on the pressure ring 12; Each functional block 11 has a thickness direction defined radially along the pressure ring 12 and is provided with a first air extraction hole 110 penetrating the thickness direction. The pressure ring 12 and the functional block 11 constitute the first air extraction ring of the air extraction component. At least two of the functional blocks 11 have different parameters, including thickness and / or surface properties.

[0034] In the embodiments of this application, reference is made to Figure 1 , Figure 3 and Figure 4 The air extraction component 1 specifically includes a pressure ring 12 and multiple functional blocks 11. The two work together to form the first air extraction ring of the air extraction component 1, so as to realize the air extraction and temperature field regulation and adaptation in the reaction chamber.

[0035] Specifically, the pressure ring 12 and the functional stop 11 are in a press-fit relationship, that is, the pressure ring 12 is pressed on the functional stop 11. The pressing action of the pressure ring 12 can ensure the structural stability of the functional stop 11 after assembly and prevent the functional stop 11 from being displaced due to airflow impact during the LPCVD process.

[0036] Combination Figure 1 and Figure 2 Each functional block 11 can be a cubic structure. After multiple functional blocks 11 are arranged along the circumference of the pressure ring 12, they can fit the circumferential contour of the pressure ring 12.

[0037] Of course, the overall shape of the functional block 11 is not limited to a cubic structure. For example, the overall shape of the functional block 11 can be an arc-shaped block structure, the curvature of which is consistent with the circumferential contour of the annular base 10. After multiple functional blocks 11 are arranged along the circumferential direction of the pressure ring 12, they can fit into the circumferential contour of the pressure ring 12.

[0038] The functional baffle 11 and the pressure ring 12 can be made of quartz or metal. When both the functional baffle 11 and the pressure ring 12 are made of metal, they will not cause organic pollution to the reaction chamber.

[0039] Multiple functional blocks 11 are evenly arranged along the circumference of the pressure ring 12 to form an annular air extraction structure, which is compatible with the circular chamber design of the reaction chamber. At the same time, each functional block 11 is detachably set on the pressure ring 12, and can be assembled by conventional detachable connection structures such as snap-fit ​​or bolt connection.

[0040] In one specific embodiment, refer to Figure 2 Each of the functional blocks 11 is provided with a third mating part 113 on its outer surface opposite to the heating chuck 3; The pressure ring 12 is pressed onto the functional stop block 11 via the third mating part 113.

[0041] In this embodiment, the third mating part 113 is an integrally formed boss formed along the thickness direction on the outer surface (the surface opposite to the heating chuck 3) of each functional stop 11. A groove adapted to the boss is provided circumferentially on the inner circumferential surface of the pressure ring 12. The pressure ring 12 is axially inserted from the top end face of the functional stop 11, aligning the groove on the inner circumferential surface of the pressure ring 12 with the boss on the outer surface of the functional stop 11, and slowly pressed down until the boss is fully embedded in the annular groove, completing the fitting. Alternatively, at least a portion of the bottom surface of the pressure ring 12 is a mating part, which rests on the boss, completing the assembly of the pressure ring 12.

[0042] In this embodiment, the pressure ring 12 integrates multiple independent functional blocks 11 into a whole, effectively resisting airflow impact and preventing the functional blocks 11 from misaligning or shifting. That is, the pressure ring 12 stabilizes the independent functional blocks 11 to form a structurally stable first suction ring.

[0043] Furthermore, each functional block 11 has a thickness direction defined radially along the pressure ring 12. The size of this thickness direction directly affects the gap between the functional block 11 and the heating chuck 3 inside the reaction chamber. Simultaneously, each functional block 11 has a first vent hole 110 extending through its thickness direction. The first vent hole 110 is used to discharge gas from the reaction chamber. Its direction of penetration, consistent with the thickness direction, ensures a smooth venting path and reduces airflow resistance. The pressure ring 12 and the multiple circumferentially arranged functional blocks 11 together constitute the first venting ring of the venting component 1, forming an annular venting space, which ensures the uniformity of gas pressure distribution within the chamber. For example, gas from the reaction chamber enters the venting space formed by the pressure ring 12 and the multiple functional blocks 11 through the first vent hole 110, and the gas is evenly distributed within this venting space.

[0044] For example, the shape of the first air extraction hole 110 can be a circular through hole or a square or other shaped through hole, and the plurality of first air extraction holes 110 are evenly distributed along the circumference of the functional block 11 (e.g., Figure 1 As shown in the figure, it is used to remove gas from the reaction chamber.

[0045] In this embodiment, at least two of the multiple functional blocks 11 have different parameters, specifically including thickness and / or surface properties. The difference in thickness directly adjusts the gap between the functional block 11 and the heating chuck 3, thereby altering the airflow velocity and heat transfer efficiency at the gap. Differences in surface properties can be achieved through various methods, such as anodizing, surface polishing, or sandblasting, or by controlling the surface properties of the functional block 11 by defining its material. These methods alter the reflectivity of the functional block 11 to heat within the cavity. Through this differentiated parameter design, precise local control of the temperature field within the reaction cavity can be achieved, meeting the refined control requirements of the LPCVD process.

[0046] Therefore, in this embodiment, the functional blocks 11 are detachably mounted on the pressure ring 12, and each functional block 11 has different parameters. By replacing functional blocks 11 with different parameters, the gap between the functional block 11 and the heating chuck 3 can be flexibly adjusted, and / or the heat reflection effect of the functional block 11 can be controlled, thereby achieving local control of the temperature field in the reaction chamber. This effectively improves the adjustment accuracy of process parameters such as deposition rate, film uniformity, and doping concentration, meeting the needs of modern semiconductor manufacturing for fine control of LPCVD processes and expanding the application scenarios of LPCVD processes in high-precision device fabrication.

[0047] In one embodiment of this application, at least two of the multiple functional blocks 11 have different thicknesses (their surface properties can be the same or different). In this embodiment, the thickness of the functional blocks 11 ranges from 0.5mm to 20mm, wherein the thickness difference between functional blocks 11 with different thicknesses is 0.1mm to 0.5mm. Preferably, the thickness of the functional blocks 11 ranges from 5mm to 15mm.

[0048] For example, the thickness of the functional stop 11 can be 0.5mm, 1mm, 1.5mm, 1.8mm, 2mm, 2.4mm, 2.6mm, 3mm, 3.5mm, 4mm, 4.4mm, 4.8mm, 5.0mm, 8mm, 10mm, 13mm, 15mm, 18mm, etc.

[0049] For example, the function block 11 includes a first function block 11 with a thickness of 0.5mm, a second function block 11 with a thickness of 1.0mm, a third function block 11 with a thickness of 5mm, or a fourth function block 11 with a thickness of 8mm, etc., and users can choose one according to their temperature control needs.

[0050] The thickness difference between functional blocks 1120 of different thicknesses is 0.1mm, 0.2mm, 0.3mm, 0.4mm or 0.5mm.

[0051] In practical use, according to the temperature control requirements of different areas of the heating chuck 3 in the CVD process, select the functional block 11 with the corresponding thickness size, and set each functional block 11 and the pressure ring 12 detachably so that multiple functional blocks 11 are spliced ​​together along the circumference of the pressure ring 12 to form a complete first suction ring, and the suction component 1 is arranged around the outer periphery of the heating chuck 3 in the reaction chamber.

[0052] In this embodiment, the temperature of the heating chuck 3 can be locally controlled by replacing functional blocks 11 of different thicknesses and sizes. The control principle can be quantitatively explained based on the heat transfer formula, as follows: Heat transfer follows the classical formula Q=cm*Δt, where: Q is the heat energy absorbed by the functional baffle 11 (sources include the heat radiation from the heating chuck 3 and the heat conduction of the process gas in the reaction chamber); c is the specific heat capacity of the material of the functional baffle 11 (in this embodiment, the functional baffle 11 can be made of the same quartz material, and c is a fixed constant); m is the mass of a single functional baffle 11; Δt is the temperature change of the functional baffle 11 (Δt = t-t0, t0 is the initial temperature of the baffle, and t is the final temperature after heat absorption).

[0053] Under the premise that the material density ρ and surface area S of the functional block 11 are fixed (the molding outline of the functional block 11 of the same specification is consistent and the surface area S is constant), according to the mass calculation formula m=ρ*S*d (d is the radial thickness of the functional block 11), the change of the thickness d will directly cause the mass m of the functional block 1120 to change proportionally—that is, the larger the thickness d, the larger the mass m; the smaller the thickness d, the smaller the mass m.

[0054] Because the process environment within the reaction chamber is stable, the heat energy Q absorbed by functional baffle 11 can be considered a constant value. This is consistent with the formula Q=cm △t (where c and Q are constants), the mass m is inversely proportional to the temperature change △t.

[0055] The specific control logic of this application embodiment is as follows: When a functional baffle 11 with a larger thickness dimension d is selected: the mass m increases → the temperature change Δt decreases (the heating rate of functional baffle 11 slows down) → the thermal radiation temperature difference between functional baffle 11 and heating chuck 3 decreases → the heat loss of heating chuck 3 decreases → the temperature of the corresponding area increases; at the same time, the increased thickness will synchronously reduce the gap distance between the side wall of heating chuck 3 and functional baffle 11 → the process gas flow rate decreases → the heat loss with gas convection is further reduced, enhancing the heating effect.

[0056] When a functional baffle 11 with a smaller thickness dimension d is selected: the mass m decreases → the temperature change Δt increases (the heating rate of functional baffle 11 becomes faster) → the thermal radiation temperature difference between functional baffle 11 and heating chuck 3 increases → the heat loss of heating chuck 3 increases → the temperature of the corresponding area decreases; at the same time, the reduction in thickness will synchronously increase the gap distance between the side wall of heating chuck 3 and functional baffle 11 → the process gas flow rate increases → the heat loss with gas convection further increases, enhancing the cooling effect.

[0057] Through the synergistic effect of "mass-heat loss effect control" and "gap-convection heat dissipation control" mentioned above, precise local fine-tuning of the temperature in different circumferential regions of the heating chuck 3 can be achieved. For example, in the thin film deposition process, if the deposition temperature in a certain area of ​​the heating chuck 3 is detected to be too low, the functional block 11 at the corresponding position in that area can be replaced with a thicker specification (such as replacing the 1.0mm second functional block 11 with a 5mm third functional block 11). By increasing the mass of the functional block 11, the temperature of the heating chuck 3 in that area is increased due to the dual effects of reducing Δt and reducing the gap distance to reduce convection heat dissipation, thereby optimizing the film thickness uniformity.

[0058] This embodiment of the application achieves localized temperature control of the heating chuck 3 by replacing functional blocks 11 with different surface properties. Specifically, the surface properties of the functional blocks 11 are controlled by limiting their material; that is, at least two functional blocks 11 have different materials. The control principle can be quantitatively explained based on the heat transfer formula, as follows: In this embodiment, at least two functional blocks 11 may also be made of different materials (the thickness of the functional blocks 11 may be the same or different). The material of the functional blocks 11 may be quartz (SiO2), or alumina ceramic (Al2O3), or silicon nitride ceramic (Si3N4), or metal.

[0059] Based on the classical formula Q=cm*Δt for heat transfer, where c represents the specific heat capacity of the substance, the specific heat capacity of the functional baffle 11 varies depending on its material. By setting detachable functional baffles 11 with different materials (different specific heat capacities), a control mechanism of "material-specific heat capacity-temperature change" is constructed. When the thickness of the functional baffles 11 is consistent, local temperature fine-tuning can be achieved simply by replacing the functional baffles 11 with different materials. Alternatively, functional baffles 11 with different thicknesses and materials can be replaced simultaneously to achieve local temperature adjustment of the heating chuck 3. This effectively improves the adjustment accuracy of process parameters such as deposition rate, film uniformity, and doping concentration, meeting the demands of modern semiconductor manufacturing for refined control of LPCVD processes and expanding the application scenarios of LPCVD processes in high-precision device fabrication.

[0060] In some embodiments, the surface properties of the functional blocks 11 can also be adjusted by surface treatment processes. For example, the surface of the functional blocks 11 can be treated by anodizing, surface polishing, sandblasting, or other processes that can change the surface roughness of the functional blocks 11, so as to achieve local adjustment of the temperature of the heating chuck 3 by adjusting the heat reflectivity of different functional blocks 11.

[0061] In the first example, the heat loss rate of the functional block 11 is adjusted by anodizing. The smaller the heat loss rate, the greater the reflectivity, which can reflect more heat back to the corresponding area of ​​the heating chuck 3, thereby increasing the local temperature of the heating chuck 3.

[0062] In this embodiment, the functional baffle 11 is made of aluminum, and an aluminum oxide layer is formed on its surface through an anodizing process. The aluminum oxide layer has good thermal insulation properties, which can hinder heat transfer and thus reduce the heat loss rate of the functional baffle 11 from the heating chuck 3, thereby achieving localized temperature rise in the corresponding area of ​​the heating chuck 3. By setting anodized and non-anodized functional baffles 11 at different positions around the heating chuck 3, differentiated heat loss areas can be formed, achieving precise control of the temperature field within the reaction chamber. In the second example, a surface polishing process is used to adjust the thermal reflectivity of the functional block 11. In this embodiment, the surface of some functional blocks 11 is treated with a mechanical polishing process, which significantly reduces the surface roughness and greatly improves the flatness of the treated functional block 11. The smoother the surface of the functional block 11, the better the specular reflection effect of the radiated heat from the heating chuck 3, and the more heat can be reflected back to the corresponding area of ​​the heating chuck, thereby increasing the local temperature of that area. By using polished and unpolished functional blocks 11 in combination, the temperature of specific areas in the cavity can be targeted to increase, adapting to the requirements of local high-temperature deposition.

[0063] In the third example, sandblasting is used to adjust the thermal reflectivity of the functional baffle 11. In this embodiment, sandblasting is used to spray gravel onto the surface of the functional baffle 11, modifying its surface morphology—the originally sharp, protruding microstructures on the surface of the functional baffle 11 can be polished into a rounded shape, transforming the reflective surface of the functional baffle 11 into a diffuse reflective surface, thereby changing its thermal reflectivity. Specifically, the sandblasted functional baffle 11 significantly reduces its ability to reflect the radiated heat from the heating chuck 3, especially showing a significant effect in suppressing thermal reflection in the inner edge region of the cavity. Sandblasting the functional baffle 11 can effectively reduce the temperature in the edge region and improve the problem of uneven temperature within the cavity. In the fourth example, local temperature adjustment is achieved through airflow regulating surfaces with differentiated surface roughness. Functional blocks 11 facing the heating chuck 3 have airflow regulating surfaces with different roughnesses. By replacing functional blocks 11 with different roughnesses, the surface characteristics of the airflow regulating surface in the suction member 1 are changed, thereby locally adjusting the temperature of the heating chuck 3.

[0064] The roughness of the airflow regulating surface of the functional baffle 11 ranges from Ra0.5μm to Ra3.0μm. The roughness difference between different functional baffles 11 can be no less than 0.5μm, forming a multi-gradient selectable scheme.

[0065] For example, the functional block 11 includes: a functional block 11 with an airflow regulating surface roughness of Ra0.5μm (low roughness level), a functional block 11 with an airflow regulating surface roughness of Ra1.2μm (lower roughness level), a functional block 11 with an airflow regulating surface roughness of Ra1.8μm (medium-low roughness level), a functional block 11 with an airflow regulating surface roughness of Ra2.5μm (medium-high roughness level), and a functional block 11 with an airflow regulating surface roughness of Ra3.0μm (high roughness level).

[0066] In some cases, the surface of the functional block 11 can be processed by laser texturing, etching, grinding and other processes.

[0067] The specific control logic in this embodiment is as follows: The heat radiation generated by the heated chuck 3 during operation is partially reflected by the airflow regulating surface of the functional block 11. The greater the roughness of the airflow regulating surface, the lower the heat reflectivity, and the lower the temperature of the corresponding area of ​​the heated chuck 3. Conversely, the smaller the roughness of the airflow regulating surface, the greater the heat reflectivity, and the higher the temperature of the corresponding area of ​​the heated chuck 3.

[0068] When it is necessary to increase the temperature of a certain area of ​​the heating chuck 3: replace the function block 11 at the corresponding position of that area with a low roughness specification (such as function block 11 with Ra1.2μm).

[0069] When it is necessary to reduce the temperature of a certain area of ​​the heating chuck 3: replace the function block 11 at the corresponding position of that area with a high roughness specification (such as function block 11 with Ra3.0μm).

[0070] For example, in the thin film deposition process, if the temperature of a certain area of ​​the heating chuck 3 is detected to be too high, the functional block 11 in that area can be replaced with a functional block 11 with a higher roughness.

[0071] In one embodiment, the outer surface of the functional stop 11, which has different surface properties, has identifiable visual markings. In this embodiment, the visual markings enable rapid naked-eye identification of the functional stop 11 without the need for measuring tools, thereby improving assembly efficiency and reducing process debugging costs.

[0072] In one embodiment, refer to Figure 1 The air extraction component 1 further includes a functional component 2, the coefficient of thermal expansion of the functional component 2 being higher than that of the functional block 11; The functional component 2 is disposed on the side surface of the functional block 11 facing the heating chuck 3 via a detachable assembly structure. The functional component 2 is also provided with a through hole 21 extending through its thickness direction. When the functional component 2 is disposed on the functional block 11, the through hole 21 corresponds to the first air extraction hole 110 formed by the functional block 11.

[0073] In this embodiment, the functional component 2 is made of a material with a significantly higher coefficient of thermal expansion than the functional stop 11 (quartz), and is adapted to the high temperature and corrosion resistance requirements of the LPCVD process. For example, the material of the functional component 2 can be PTFE, ceramic, or plastic.

[0074] In some embodiments, the functional component 2 is disposed on the surface of the functional stop 11 facing the heating chuck 3 via a detachable assembly structure. The detachable assembly structure can be a "slot-protrusion" mating structure. For example, the surface of the functional stop 11 facing the heating chuck 3 has symmetrically formed rectangular slots, and the functional component 2 has an integrally formed protrusion corresponding to the slot position. The protrusion and slot are in a transitional fit, ensuring a stable assembly and easy disassembly. The functional component 2 is fitted to the surface of the functional stop 11 facing the heating chuck 3 through the engagement of the protrusion and slot.

[0075] In this embodiment, when the reaction chamber is in the low-temperature stage, the thermal expansion of functional component 2 is small, and the gap between functional component 2 and heating chuck 3 is close to the initial value. Process gas flow is smooth, heat dissipation is rapid, and localized overheating is avoided. When the reaction chamber is in the high-temperature stage, the thermal expansion of functional component 2 increases significantly, the gap between functional component 2 and heating chuck 3 decreases, gas flow resistance increases, and convective heat dissipation effect weakens. This reduces excessive heat loss in the high-temperature stage, ensures the temperature stability of heating chuck 3, and provides a stable temperature environment for thin film deposition.

[0076] In the suction component 1, in areas where the functional component 2 is not installed, the gap distance of the functional baffle 11 remains at its initial value, resulting in stable heat dissipation efficiency. In areas where the functional component 2 is installed, the gap between the functional component 2 and the heating chuck 3 dynamically decreases with temperature, leading to an adaptive decrease in heat dissipation efficiency and creating a differentiated temperature field distribution. Therefore, in this embodiment, the thermal expansion effect of the functional component 2 assists the functional baffle 11 in regulating the local temperature field around the heating chuck 3, achieving the purpose of local temperature fine-tuning.

[0077] In one embodiment, refer to Figure 2 , Figure 3 and Figure 4 The air extraction component also includes an annular base 10, and the ends of the plurality of functional blocks 11 away from the pressure ring are detachably disposed on the annular base 10; The annular base 10 has a second air extraction hole 102, which is connected to the first air extraction hole 110 of the functional block 11. The annular base 10 constitutes the second air extraction ring of the air extraction component.

[0078] This embodiment further optimizes the extraction path and structural stability through the cooperation of the annular base 10 and the functional blocks 11. Specifically, the ends of the multiple functional blocks 11 furthest from the pressure ring 12 are detachably assembled to the annular base 10, for example, through bolt connections, slotted engagements, or other detachable structures. This assembly design ensures that both ends of the functional blocks 11 are limited by the annular base 10 and the pressure ring 12, respectively, improving the structural stability of the functional blocks 11 during the LPCVD process and effectively preventing deformation or displacement of the functional blocks 11 due to factors such as high temperature and airflow impact.

[0079] A second air extraction hole 102 is provided on the annular base 10. This second air extraction hole 102 communicates with the first air extraction hole 110 on each functional block 11, forming a continuous air extraction path of "first air extraction hole 110 - second air extraction hole 102". (Refer to...) Figure 1 Two second air extraction holes 102 are provided on the annular base 10, and the two second air extraction holes 102 can be arranged symmetrically.

[0080] Gas within the reaction chamber enters the extraction space formed by the pressure ring 12 and multiple functional modules 11 through the first extraction port 110 of the functional baffle 11. After being evenly distributed in this extraction space, the gas enters another extraction space formed by the annular base 10 and the reaction chamber base through the second extraction port 102. After being evenly distributed again in this extraction space, the gas is discharged through the extraction port (not shown in the figure) located on the reaction chamber base and an external extraction device (not shown in the figure) connected to the extraction port. This design optimizes extraction efficiency and ensures the uniformity of gas pressure distribution within the chamber. In this embodiment, the annular base 10 constitutes the second extraction ring of the extraction component 1, which works in conjunction with the first extraction ring formed by the pressure ring 12 and the functional baffle 11 to form a double-layer annular extraction structure, further improving the uniformity and stability of extraction.

[0081] In some embodiments, the annular base 10 may specifically include an annular body and a flange, wherein the flange is integrally formed on the upper surface of the annular body, and the second air extraction hole 102 is formed on the flange.

[0082] In one embodiment, refer to Figure 1 , Figure 3 and Figure 4The annular base 10 is provided with a first mating part 101 along the circumference, and each of the functional blocks 11 is provided with a second mating part 111. The functional blocks 11 are detachably disposed on the annular base 10 through the first mating part 101 and the second mating part 111.

[0083] In this embodiment, the first mating part 101 is a slot opened circumferentially along the annular base 10, and the second mating part 111 is a locking block adapted to and engaged with the slot. For example, the locking block is provided on the bottom end face of each functional block 11. The functional block 11 is detachably disposed on the annular base 10 through the cooperation of the slot and the locking block.

[0084] Of course, the first mating part 101 and the second mating part 111 may include, but are not limited to, a “slot-block” combination. For example, the first mating part 101 may be a threaded hole that is uniformly opened along the circumference of the annular base 10, and each functional block 11 has a bolt structure on its bottom end face.

[0085] In one embodiment, refer to Figure 1 and Figure 2 Each functional stop 11 has a length direction defined circumferentially along the pressure ring 12, and each functional stop 11 is provided with a guide assembly structure 112; The guide assembly structure 112 includes: Guide slot 1121, the guide slot 1121 is formed on the first side of the functional block 11, and the groove of the guide slot 1121 extends along the length direction of the functional block 11; A guide protrusion 1122 is formed on the second side of the functional block 11, and the extension of the guide protrusion 1122 extends along the length direction of the functional block 11. The first side and the second side are opposite sides of the functional block 11 along the length direction.

[0086] In this embodiment, the guide slot 1121 and the guide protrusion 1122 are located on two opposite sides of a single functional block 11, and their extension directions are consistent, providing a guiding basis for the cooperation of adjacent functional blocks 11.

[0087] In the multiple functional blocks 11 arranged circumferentially on the pressure ring 12 and the annular base 10, the guide groove 1121 of a single functional block 11 is used to form a sliding fit with the guide protrusion 1122 of another functional block 11 adjacent in the circumferential direction; the guide protrusion 1122 of a single functional block 11 is used to form a sliding fit with the guide groove 1121 of yet another functional block 11 adjacent in the circumferential direction.

[0088] In this embodiment, adjacent functional blocks 11 are forced to be arranged along the circumferential contour of the pressure ring 12 and the annular base 10 through the sliding fit of the "protrusion-groove". This avoids circumferential offset or radial tilt of a single block and ensures that the gap distance between the heating chuck 3 and the inner sidewall (airflow adjustment surface) of all functional blocks 11 is uniform when the thickness of all functional blocks 11 is consistent.

[0089] The mating structure provided in this embodiment restricts the radial separation and axial movement of adjacent functional blocks 11, making the circumferential end faces fit tightly, reducing the leakage of process gas in the splicing gap, and avoiding local airflow turbulence from affecting the temperature field distribution.

[0090] The guide assembly structure 112 provided in this embodiment acts as a guide rail, eliminating the need for repeated calibration of the position of individual functional blocks 11, shortening assembly time, and the sliding fit avoids hard contact damage during assembly. When it is necessary to replace an individual functional block 11, simply loosen the initial fixing structure of the annular base 10, slide the target functional block 11 circumferentially, and it can be removed from the guide fit of the adjacent blocks without disassembling other blocks, thus improving maintenance efficiency.

[0091] This application also provides a semiconductor thin film deposition apparatus. The semiconductor thin film deposition apparatus includes a heated chuck 3 and a vacuum member 1 as described above, the vacuum member 1 being configured to surround the outer periphery of the heated chuck 3 disposed within a reaction chamber. For example, the semiconductor thin film deposition apparatus is a CVD apparatus, including but not limited to LPCVD.

[0092] The above embodiments mainly describe the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be elaborated here.

[0093] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A vacuum component, characterized in that, The air extraction component includes: a pressure ring (12) and multiple functional blocks (11); The pressure ring (12) is pressed against the functional stop block (11); Multiple functional blocks (11) are arranged circumferentially along the pressure ring (12), and each functional block (11) is detachably disposed on the pressure ring (12). Each functional stop (11) has a thickness direction defined radially along the pressure ring (12) and is provided with a first air extraction hole (110) penetrating the thickness direction. The pressure ring (12) and the functional stop (11) constitute the first air extraction ring of the air extraction component. At least two of the functional blocks (11) have different parameters, including thickness and / or surface properties.

2. The air extraction component according to claim 1, characterized in that, The thickness difference between the functional blocks (11) of different thicknesses ranges from 0.1mm to 0.5mm.

3. The air extraction component according to claim 1 or 2, characterized in that, The thickness of the functional stop (11) ranges from 0.5mm to 20mm.

4. The air extraction component according to claim 1, characterized in that, At least two of the functional blocks (11) have different materials.

5. The air extraction component according to claim 1, characterized in that, The surface properties of the functional block (11) are adjusted by a surface treatment process.

6. The air extraction component according to claim 1, characterized in that, The air extraction component also includes a functional component (2), the coefficient of thermal expansion of the functional component (2) is higher than that of the functional block (11), and the functional component (2) has a through hole (21) extending through its thickness direction. The functional component (2) is disposed on the side surface of the functional stop (11) facing the heating chuck (3) via a detachable assembly structure.

7. The air extraction component according to claim 1, characterized in that, The air extraction component also includes an annular base (10), and the ends of the plurality of functional blocks (11) away from the pressure ring are detachably disposed on the annular base (10). The annular base (10) has a second air extraction hole (102), which is connected to the first air extraction hole (110) of the functional block (11). The annular base (10) constitutes the second air extraction ring of the air extraction component.

8. The air extraction component according to claim 7, characterized in that, The annular base (10) is provided with a first mating part (101) along the circumferential direction, and each of the functional blocks (11) is provided with a second mating part (111). The functional blocks (11) are disposed on the annular base (10) through the first mating part (101) and the second mating part (111).

9. The air extraction component according to claim 1, characterized in that, Each of the aforementioned functional blocks (11) has a third mating part (113) on its outer surface opposite to the heating chuck (3); The pressure ring (12) is pressed onto the functional stop block (11) through the third mating part (113).

10. The air extraction component according to claim 1, characterized in that, Each functional stop (11) has a length direction defined circumferentially along the pressure ring (12), and each functional stop (11) is provided with a guide assembly structure (112). The guide assembly structure (112) includes: A guide slot (1121) is formed on the first side of the functional block (11), and the groove of the guide slot (1121) extends along the length direction of the functional block (11). A guide protrusion (1122) is formed on the second side of the functional block (11), and the extension of the guide protrusion (1122) extends along the length direction of the functional block (11). The first side and the second side are opposite sides of the functional block (11) along the length direction.

11. A semiconductor thin film deposition apparatus, characterized in that, The semiconductor thin film deposition apparatus includes a heated chuck (3) and a vacuum member as described in any one of claims 1-10, the vacuum member being configured to surround the outer periphery of the heated chuck (3) disposed within the reaction chamber.

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