Semiconductor device and method of manufacturing the same

Abstract

Provided is a semiconductor device capable of improving the production yield. A semiconductor device according to one embodiment of the present disclosure is provided with: a semiconductor section in which a semiconductor element is formed; a resin member laminated on the semiconductor portion; and a glass member laminated on the resin member. In the semiconductor device, a concave curved surface is formed on a side surface of the glass member. In addition, in the semiconductor device, the side surface of the semiconductor part is located on the inner side with respect to the side surface of the glass member.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a semiconductor device and a manufacturing method thereof. BACKGROUND

[0002] As a structure of a semiconductor device, a laminated structure in which a semiconductor portion in which a semiconductor element is formed, a resin member, and a glass member are laminated in this order is known. A manufacturing process of the semiconductor device having such a laminated structure includes a dicing process of singulating a semiconductor wafer into semiconductor chips.

[0003] In the conventional dicing process, the semiconductor portion, the resin member, and the glass member adhered to a dicing tape are processed as a whole by a blade.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT DOCUMENTS

[0006] Patent Document 1: Japanese Patent Application Publication No. 2022-19935 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] When the laminated body composed of the semiconductor portion, the resin member, and the glass member is processed as a whole, interlayer peeling can occur at the interface between the semiconductor portion and the resin member or at the interface between the resin member and the glass member due to the difference in material properties of each layer. In addition, by dicing the dicing tape with the blade, chipping can occur in the glass member. The dicing defects such as interlayer peeling or chipping can cause a decrease in manufacturing yield.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] The present disclosure provides a semiconductor device and a manufacturing method thereof capable of improving manufacturing yield.

[0011] A semiconductor device according to one embodiment of the present disclosure includes a semiconductor portion in which a semiconductor element is formed, a resin member laminated on the semiconductor portion, and a glass member laminated on the resin member. In the semiconductor device, a concave curved surface is formed on a side surface of the glass member. In addition, in the semiconductor device, a side surface of the semiconductor portion is located inward with respect to the side surface of the glass member.

[0012] The above semiconductor element can be a light-receiving element, a solid-state imaging element, or a light-emitting element.

[0013] A manufacturing method of a semiconductor device according to one embodiment of the present disclosure, in which

[0014] adhering a semiconductor wafer to a dicing tape, the semiconductor wafer laminating a glass member, a resin member, and a semiconductor portion in which a semiconductor element is formed,

[0015] The semiconductor portion is selectively etched relative to the resin component;

[0016] A first cutting process is performed, which cuts from the resin component exposed by etching of the semiconductor part to the middle of the glass component;

[0017] The semiconductor wafer is flipped so that the glass component becomes the top layer;

[0018] A second cutting process is performed, which cuts the topmost glass component.

[0019] The semiconductor portion can also be etched by introducing an etching gas with a selectivity relative to the resin component into the cavity while plasma is generated inside the cavity containing the semiconductor wafer.

[0020] The etching gas may contain SF6 (sulfur hexafluoride) or C4F8 (octafluorocyclobutane).

[0021] The blade width of the cutting tool used in the first cutting process may be different from the blade width of the cutting tool used in the second cutting process.

[0022] The blade width of the cutting tool used in the second cutting process can be greater than the blade width of the cutting tool used in the first cutting process.

[0023] The blade width of the cutting tool used in the second cutting process may be smaller than the blade width of the cutting tool used in the first cutting process.

[0024] The blade width of the cutting tool used in the first cutting process can be the same as the blade width of the cutting tool used in the second cutting process.

[0025] Alternatively, a protective film can be formed on the semiconductor portion, and the protective film can be used as a mask to etch the semiconductor portion.

[0026] The first cutting process can cut to the middle of the glass component. Attached Figure Description

[0027] Figure 1 This is a cross-sectional view showing the general structure of the semiconductor device according to the first embodiment.

[0028] Figure 2 This is a cross-sectional view showing the process of bonding a semiconductor wafer to a dicing tape.

[0029] Figure 3 This is a cross-sectional view showing the process of applying a protective film to the upper surface of the semiconductor part.

[0030] Figure 4 This is a cross-sectional view showing a portion of the process of removing the protective film.

[0031] Figure 5 This is a cross-sectional view illustrating the process of selectively cutting semiconductor components using plasma cutting.

[0032] Figure 6 This is a cross-sectional view showing the process of removing the protective film through a cleaning treatment.

[0033] Figure 7 This is a cross-sectional view showing the first cutting process of the first embodiment.

[0034] Figure 8 This is a cross-sectional view showing the inversion process of a semiconductor wafer.

[0035] Figure 9 This is a cross-sectional view showing the second cutting process of the first embodiment.

[0036] Figure 10 This is a cross-sectional view used to illustrate the manufacturing method of the semiconductor device for the comparative example.

[0037] Figure 11 This is a cross-sectional view showing the first cutting process of the second embodiment.

[0038] Figure 12 This is a cross-sectional view showing the second cutting process of the second embodiment.

[0039] Figure 13 This is a cross-sectional view showing the second cutting process in the third embodiment. Detailed Implementation

[0040] Hereinafter, embodiments of the semiconductor device of this disclosure will be described with reference to the accompanying drawings. The description will focus on the main components of the semiconductor device, but the semiconductor device may contain components or functions not shown or described. The following description does not exclude components or functions not shown or described.

[0041] (First Implementation)

[0042] Figure 1 This is a cross-sectional view showing the general structure of the semiconductor device according to the first embodiment. Figure 1 The semiconductor device 1 shown includes a semiconductor section 10, a resin section 20, and a glass section 30. Each layer will be described below.

[0043] Semiconductor section 10 is a silicon semiconductor section in which semiconductor elements are formed. These semiconductor elements include light-receiving elements, solid-state imaging elements, and light-emitting elements. Light-receiving elements include photodiodes and phototransistors. Solid-state imaging elements include CCD (Charge-Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) image sensors. Light-emitting elements include light-emitting diodes.

[0044] A resin component 20 is laminated on the semiconductor portion 10. The resin component 20 is, for example, an adhesive that bonds the semiconductor portion 10 and the glass component 30. The adhesive is transparent.

[0045] Glass component 30 is laminated on resin component 20. When the semiconductor element disposed in semiconductor section 10 is a light-receiving element or a solid-state imaging element, glass component 30 functions as a lens that focuses incident light onto the semiconductor element. Furthermore, a concave curved surface 31 is formed on the upper part of the side surface of glass component 30. This concave curved surface 31 is formed by cutting a portion of the side surface of glass component 30 during a blade cutting process described later.

[0046] In the semiconductor device 1 configured as described above, the thickness t1 of the semiconductor part 10, the thickness t2 of the resin part 20, and the thickness t3 of the glass part 30 are in the relationship that t3 > t1 > t2.

[0047] Furthermore, the width w1 of the semiconductor section 10 is smaller than the width w2 of the glass component 30. In this case, the outermost periphery of the semiconductor device 1 becomes the glass component 30. That is, the side surface of the semiconductor section 10 is located inside the side surface of the glass component 30. Therefore, when a horizontal impact is applied to the semiconductor device 1, the glass component 30 directly bears the impact, and the impact on the semiconductor section 10 is mitigated. Therefore, the risk of breakage of the semiconductor section 10, which is more prone to breakage than the glass component 30, is reduced. As a result, it is possible to prevent the deterioration of manufacturing yield.

[0048] The following is for reference Figures 2-10 The manufacturing method of the semiconductor device 1 described above will be explained. Here, the processing steps from monolithizing a semiconductor wafer into a semiconductor chip will be explained.

[0049] First, such as Figure 2 As shown, a semiconductor wafer 100 is bonded to a dicing tape 40. A glass component 30, a resin component 20, and a semiconductor portion 10 are stacked on the semiconductor wafer 100. The glass component 30 is bonded to the dicing tape 40. The resin component 20 is stacked on the glass component 30. The semiconductor portion 10 is stacked on the resin component 20.

[0050] Next, as Figure 3 As shown, a protective film 50 is coated on the upper surface of the semiconductor section 10. The protective film 50 is composed of, for example, propylene glycol monomethyl ether (PGME) or a light absorber.

[0051] Next, as Figure 4 As shown, a portion of the protective film 50 is removed. The area where the protective film 50 is removed is the cutting area. The protective film 50 can be removed, for example, by laser irradiation.

[0052] Next, as Figure 5 As shown, the semiconductor section 10 is selectively cut by plasma cutting. In plasma cutting, firstly, the semiconductor wafer 100 is housed within a chamber 200. Then, a high voltage is applied to electrodes (not shown) disposed within the chamber 200 to generate plasma 201. When an etching gas 202 is introduced into the chamber 200 while plasma 201 is generated, the semiconductor section 10 is cut by plasma etching using a protective film 50 as a mask. The etching gas 202 is a gas type that allows for an etching selectivity ratio between the material of the semiconductor section 10, namely silicon, and the material of the resin component 20, such as SF6 (sulfur hexafluoride) or C4F8 (octafluorocyclobutane).

[0053] Next, as Figure 6 As shown, the protective film 50 is removed by cleaning with a specific agent.

[0054] Next, as Figure 7 As shown, a first cutting process is performed. In this first cutting process, a cutting tool 301 is used to cut from the surface of the resin component 20 exposed by the cutting of the semiconductor portion 10 to the middle of the glass component 30. At this time, a tapered groove is formed such that the resin component 20 is wider than the semiconductor portion 10 after monolithization. Furthermore, the cutting tool 301 can be, for example, a cutting blade, a laser cutting machine, an ultrasonic cutting machine, a wire saw, a water jet, etc. Additionally, the cutting termination position of the cutting tool 301 is, for example, the middle position of the glass component 300.

[0055] Next, as Figure 8 As shown, the semiconductor wafer 100 is reversed 180 degrees relative to the dicing strip 40.

[0056] Finally, as Figure 9As shown, a second cutting process is performed. In this second cutting process, the remaining portion of the glass component 30 is cut using a cutting tool 302. Thus, the semiconductor wafer 100 is monolithically converted into a semiconductor chip. The cutting tool 302 can be similarly applied to the cutting tool 301, for example, using a cutting blade, laser cutter, ultrasonic cutter, wire saw, waterjet, etc. When both cutting tools 301 and 302 are cutting blades, the blade width w4 of the cutting tool 302 is greater than the blade width w3 of the cutting tool 301.

[0057] Here, for reference Figure 10 The manufacturing method of the semiconductor device of the comparative example is explained. Furthermore, in... Figure 10 In this embodiment, the same components are labeled with the same reference numerals, and detailed descriptions are omitted.

[0058] In this comparative example, the semiconductor portion 10, resin component 20, and glass component 30 are cut together using a cutting blade 303. At this time, due to the different rigidity of the materials of each of the semiconductor portion 10, resin component 20, and glass component 30, interlayer delamination may occur at the interface between the semiconductor portion 10 and resin component 20, or at the interface between resin component 20 and glass component 30. Furthermore, the cutting blade 303 may cause chipping at the interface between the glass component 30 and the cutting strip 40 by cutting a portion of the cutting strip 40.

[0059] Therefore, in this embodiment, to avoid cutting defects such as interlayer delamination or cracking, plasma cutting is first performed on only the semiconductor portion 10 using an etching gas 202 with a selective ratio for the resin component 20. This suppresses delamination at the interface between the semiconductor portion 10 and the resin component 20.

[0060] Next, a half-cut dicing is performed, cutting from the plasma-cut surface to the middle of the glass component 30 using cutting tool 301. In this half-cut dicing, unlike the comparative example, the entire glass component 30 is not cut. Therefore, there is no entanglement of the cutting strip 40, and the interface between the resin component 20 and the glass component 30 can be stably cut with the blade. Furthermore, since the cutting strip 40 is not cut as in the comparative example, chipping is also avoided.

[0061] Finally, by reversing the process so that glass component 30 is the top layer, only glass component 30 is cut using cutting tool 302. This prevents chipping because the cutting strip 40 is not cut. Furthermore, since the cutting conditions can be set to suit the characteristics of glass component 30, processing speed can be maximized.

[0062] As described above, according to this embodiment, the occurrence of interface peeling or cracking can be suppressed. Therefore, since cutting defects can be reduced, the manufacturing yield can be improved.

[0063] Furthermore, in this embodiment, the blade width w4 of the cutting tool 302 for cutting the glass component 30 is greater than the blade width w3 of the cutting tool 301 for cutting the resin component 20 and a portion of the glass component 30. Therefore, not only is it easier to align the cutting tool 302 during processing, but the cutting time can also be shortened. Moreover, since a cutting tool 301 with a narrow blade width is used in cutting the resin component 20, the plasma etching width of the semiconductor portion 10 can be reduced. This, in turn, shortens the etching time.

[0064] (Second Implementation)

[0065] The second embodiment of this disclosure will be described. Here, the description will focus on the method for manufacturing the semiconductor device according to this embodiment.

[0066] In this embodiment, the process of selectively cutting the semiconductor portion 10 by plasma cutting is the same as in the first embodiment.

[0067] On the other hand, the first cutting process in this embodiment is as follows: Figure 11 As shown, a cutting tool 302 is used to cut from the surface of the resin component 20 to the middle of the glass component 30. Furthermore, the second cutting process of this embodiment is as follows: Figure 12 As shown, the reversed glass component 30 is cut using a cutting tool 301. That is, in this embodiment, the cutting tool used in the cutting process is interchanged with that in the first embodiment.

[0068] In this embodiment described above, similar to the first embodiment, only the semiconductor portion 10 is etched by using plasma cutting with an etching gas 202 having a selectivity for the resin component 20. This suppresses delamination of the interface between the semiconductor portion 10 and the resin component 20.

[0069] Furthermore, even when using cutting tool 302 instead of cutting tool 301 for partial cutting, the cutting strip 40 will not be entangled, and the interface between the resin component 20 and the glass component 30 can be stably cut with the blade. Moreover, since the cutting strip 40 is not cut, chipping can also be avoided. Furthermore, by using cutting tool 302, whose blade width is wider than that of cutting tool 301, the position alignment for the second cutting process becomes easier.

[0070] Furthermore, in this embodiment, the semiconductor wafer 100 is inverted such that the glass component 30 is the topmost layer. Therefore, even if the glass component 30 is cut using the cutting tool 301 instead of the cutting tool 302, the cutting strip 40 will not be cut. This prevents chipping.

[0071] As described above, in this embodiment, similarly to the first embodiment, the occurrence of interface peeling or cracking can also be suppressed. This reduces cutting defects and thus improves manufacturing yield.

[0072] (Third Implementation)

[0073] The third embodiment of this disclosure will be described. Here, the description will focus on the method for manufacturing the semiconductor device according to this embodiment.

[0074] In this embodiment, the first cutting process is performed using the cutting tool 301 until the same as in the first embodiment.

[0075] On the other hand, the second cutting process in this embodiment differs from that in the first embodiment in that, as shown in FIG14, the reversed glass component 30 is cut using a cutting tool 301. That is, in this embodiment, both the first and second cutting processes are performed using a cutting tool 301. Alternatively, in this embodiment, both cutting processes can also be performed using a cutting tool 302.

[0076] In this embodiment described above, similar to the first embodiment, only the semiconductor portion 10 is etched by using plasma cutting with an etching gas 202 having a selectivity ratio for the resin component 20. This suppresses delamination of the interface between the semiconductor portion 10 and the resin component 20.

[0077] Furthermore, similar to the first embodiment, by using the first cutting process with cutting tool 301, no entanglement of the cutting strip 40 occurs, and the interface between the resin component 20 and the glass component 30 can be stably half-cut. Moreover, since the cutting strip 40 is not cut, chipping can also be suppressed.

[0078] Furthermore, in this embodiment, the semiconductor wafer 100 is inverted so that the glass component 30 is the topmost layer. Therefore, even if the glass component 30 is cut using the cutting tool 301 instead of the cutting tool 302, the cutting strip 40 will not be cut. This prevents chipping. In addition, if positional accuracy is ensured, unevenness on the sides of the glass component 30 caused by the processing shape can be reduced. Moreover, since there is no need to change the cutting tool before cutting the glass component 30, the operation time can be shortened.

[0079] As described above, in this embodiment, similar to the first embodiment, the occurrence of peeling or cracking can be suppressed. Therefore, since cutting defects can be reduced, the manufacturing yield can be improved.

[0080] Furthermore, this technology is not limited to the embodiments described above, and may also include configurations that mutually replace or modify the components or combinations disclosed in the embodiments described above, mutually replace known technologies, and configurations that mutually replace or modify the components or combinations disclosed in the embodiments described above. Moreover, the scope of this technology is not limited to the embodiments described above, but also includes the matters described in the claims and their equivalents.

[0081] Furthermore, this technology can also be configured as follows.

[0082] (1) A semiconductor device comprising:

[0083] The semiconductor section contains semiconductor components.

[0084] Resin component, laminated on the semiconductor portion; and

[0085] Glass components, laminated on the resin components,

[0086] A concave curved surface is formed on the side of the glass component.

[0087] The side of the semiconductor portion is located inside the side of the glass component.

[0088] (2) The semiconductor device according to (1), wherein the semiconductor element is a light-receiving element, a solid-state imaging element or a light-emitting element.

[0089] (3) A method for manufacturing a semiconductor device, wherein...

[0090] A semiconductor wafer is bonded to a dicing tape. The semiconductor wafer is stacked with glass components, resin components, and a semiconductor portion in which semiconductor elements are formed.

[0091] The semiconductor portion is selectively etched relative to the resin component.

[0092] A first cutting process is performed, cutting from the resin component exposed by etching of the semiconductor portion to the middle of the glass component.

[0093] The semiconductor wafer is flipped so that the glass component is on top.

[0094] A second cutting process is performed, in which the uppermost glass component is cut.

[0095] (4) The method for manufacturing a semiconductor device according to (3) wherein the semiconductor portion is etched by introducing an etching gas having a selectivity relative to the resin component into the cavity while plasma is generated in the cavity containing the semiconductor wafer.

[0096] (5) The method of manufacturing a semiconductor device according to (4), wherein the etching gas comprises SF6 (sulfur hexafluoride) or C4F8 (octafluorocyclobutane).

[0097] (6) A method of manufacturing a semiconductor device according to any one of (3)-(5), wherein the blade width of the cutting tool used in the first cutting process is different from the blade width of the cutting tool used in the second cutting process.

[0098] (7) The method of manufacturing a semiconductor device according to (6), wherein the blade width of the cutting tool used in the second cutting process is greater than the blade width of the cutting tool used in the first cutting process.

[0099] (8) The method of manufacturing a semiconductor device according to (6), wherein the blade width of the cutting tool used in the second cutting process is smaller than the blade width of the cutting tool used in the first cutting process.

[0100] (9) A method of manufacturing a semiconductor device according to any one of (3)-(5), wherein the blade width of the cutting tool used in the first cutting process is the same as the blade width of the cutting tool used in the second cutting process.

[0101] (10) A method for manufacturing a semiconductor device according to any one of (3)-(9), wherein a protective film is formed on the semiconductor portion and the semiconductor portion is etched using the protective film as a mask.

[0102] (11) A method of manufacturing a semiconductor device according to any one of (3)-(10), wherein the first cutting process cuts to the middle of the glass component.

[0103] (Explanation of reference numerals in the attached image)

[0104] 1: Semiconductor devices

[0105] 10: Semiconductor Division

[0106] 20: Resin components

[0107] 30: Glass components

[0108] 31: Concave surface

[0109] 40: Cutting strip

[0110] 50: Protective film

[0111] 200: Chamber

[0112] 201: Plasma

[0113] 202: Etching Gas

[0114] 301: Cutting tools

[0115] 302: Cutting tools

Claims

1. A semiconductor device comprising: The semiconductor section contains semiconductor components. Resin component, laminated on the semiconductor portion; and Glass components, laminated on the resin components, A concave curved surface is formed on the side of the glass component. The side of the semiconductor portion is located inside the side of the glass component.

2. The semiconductor device according to claim 1, wherein The semiconductor element is a light-receiving element, a solid-state imaging element, or a light-emitting element.

3. A method for manufacturing a semiconductor device, wherein, A semiconductor wafer is bonded to a dicing tape, wherein the semiconductor wafer is stacked with glass components, resin components and a semiconductor portion in which semiconductor elements are formed; The semiconductor portion is selectively etched relative to the resin component. A first cutting process is performed, cutting from the resin component exposed by etching of the semiconductor portion to the middle of the glass component. The semiconductor wafer is flipped so that the glass component is on top. A second cutting process is performed, in which the uppermost glass component is cut.

4. The method for manufacturing a semiconductor device according to claim 3, wherein, The semiconductor portion is etched by introducing an etching gas with a selectivity relative to the resin component into the chamber while plasma is generated in the chamber containing the semiconductor wafer.

5. The method for manufacturing a semiconductor device according to claim 4, wherein, The etching gas contains SF6 (sulfur hexafluoride) or C4F8 (octafluorocyclobutane).

6. The method for manufacturing a semiconductor device according to claim 3, wherein, The blade width of the cutting tool used in the first cutting process is different from the blade width of the cutting tool used in the second cutting process.

7. The method for manufacturing a semiconductor device according to claim 6, wherein, The blade width of the cutting tool used in the second cutting process is greater than the blade width of the cutting tool used in the first cutting process.

8. The method for manufacturing a semiconductor device according to claim 6, wherein, The blade width of the cutting tool used in the second cutting process is smaller than the blade width of the cutting tool used in the first cutting process.

9. The method for manufacturing a semiconductor device according to claim 3, wherein, The blade width of the cutting tool used in the first cutting process is the same as the blade width of the cutting tool used in the second cutting process.

10. The method for manufacturing a semiconductor device according to claim 3, wherein, A protective film is formed on the semiconductor portion. The protective film is used as a mask to etch the semiconductor portion.

11. The method for manufacturing a semiconductor device according to claim 3, wherein, The first cutting process cuts to the middle of the glass component.

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