Sample stage system
By arranging multiple heating coils and temperature measuring components on the sample stage, combined with a temperature control module, the temperature uniformity of the MPCVD equipment sample stage was controlled, solving the problem of insufficient temperature control accuracy in traditional liquid cooling methods and ensuring temperature stability and uniformity during the deposition process.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-25
- Publication Date
- 2026-04-14
AI Technical Summary
Existing microwave plasma chemical vapor deposition (MPCVD) equipment suffers from difficulties in controlling temperature uniformity in its sample stage system. Traditional liquid cooling methods have poor temperature control accuracy and make it difficult to achieve dynamic and rapid temperature uniformity adjustment.
Multiple heating coils are arranged in a ring around the center of the sample stage and then around the edge. Combined with a temperature measuring component and a temperature control module, temperature uniformity is achieved through zoned heating and dynamic power output. Temperature is controlled by heating coils, and the temperature measuring component provides real-time feedback of temperature data to adjust the power of the heating coils.
It achieves precise control of the sample stage surface temperature, overcomes the problem of uneven plasma energy distribution, ensures temperature consistency and stability during the deposition process, and improves temperature control accuracy.
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Figure CN121852876A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of microwave chemical plasma vapor deposition equipment technology, and in particular to a sample stage system. Background Technology
[0002] Unlike other types of chemical vapor deposition (CVD) methods, the sample stage system of microwave plasma chemical vapor deposition (MPCVD) equipment is heated by microwave plasma, such as... Figure 1 As shown, the uneven and dynamically changing energy distribution of plasma makes it difficult to control the surface temperature uniformity of the sample stage system, resulting in uneven film deposition. Traditional CVD sample stage systems, which mostly employ overall temperature control, cannot meet the temperature uniformity requirements of MPCVD. Chinese patent document CN222499363U discloses a uniform cooling device for a sample stage system. This device uses water cooling to locally regulate the temperature of different areas of the sample stage system. The cooling device consists of multiple sets of cooling pipes, each equipped with a flow meter and a valve. The main drawbacks of this device are poor accuracy in liquid cooling temperature control and a delay, making it difficult to achieve real-time dynamic and rapid temperature uniformity of the sample stage system. Furthermore, when a large number of pipes with small diameters are required, precise control of the valves and flow meters in the liquid cooling pipes is difficult to achieve in engineering practice. Summary of the Invention
[0003] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide a sample stage system with simple structure, high temperature control accuracy and the ability to meet the temperature uniformity requirements of MPCVD equipment.
[0004] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: A sample stage system includes a sample stage and a heating assembly disposed in the sample stage. The heating assembly includes a plurality of heating coils, each of which is arranged in a ring around the sample stage from the center to the edge. The upper surface of the sample stage is provided with a plurality of annular temperature zones, and each heating coil is arranged in a one-to-one correspondence with each of the temperature zones.
[0005] As a further improvement to the above technical solution: The sample stage system also includes a temperature measuring component and a temperature control module. The temperature control module is connected to the temperature measuring component and each heating coil. The temperature measuring component is used to measure the temperature of each temperature zone and feed the temperature data back to the temperature control module in real time. The temperature control module is used to dynamically output power to each heating coil based on the temperature of the highest temperature zone, so as to achieve uniform temperature in each temperature zone.
[0006] The temperature measuring component is used to measure the temperature at concentric, equidistant circles in each temperature zone.
[0007] The projections of the concentric equidistant circles of the heating coil and the concentric equidistant circles of the temperature region onto the horizontal plane overlap.
[0008] The width of the heating coil is 1mm to 10mm.
[0009] The spacing between adjacent heating coils is 1mm to 10mm.
[0010] The heating coil is a flat wire or a round wire.
[0011] The heating coil is made of molybdenum, tungsten, or nickel-chromium alloy.
[0012] The heating coil is fixed in the sample stage by an embedded package or a sandwich package.
[0013] The temperature measuring component uses infrared, thermocouple, or resistance temperature detector (RTD) methods for temperature measurement.
[0014] Compared with the prior art, the advantages of the present invention are as follows: 1. The sample stage system of the present invention, by dividing multiple temperature zones and using a zoned approach for temperature control, can accurately address the problem of uneven plasma energy distribution and meet the temperature uniformity requirements of MPCVD equipment; by using heating coils to control the surface temperature of the sample stage, compared with liquid cooling technology, the structure is simple, it can respond to temperature changes in a timely manner, and the temperature control accuracy is high.
[0015] 2. In the sample stage system of the present invention, the temperature measuring component measures the temperature of each temperature zone and feeds the temperature data back to the temperature control module in real time. The temperature control module uses the temperature of the highest temperature zone as a reference and, based on the temperature difference between the temperature of different temperature zones and the reference temperature, provides different power outputs to each heating coil and performs different heating temperature compensations for different temperature zones until the temperature of each temperature zone on the sample stage surface is uniform. This dynamic control method can effectively avoid local temperature deviations caused by plasma energy fluctuations and ensure that the sample is in a stable temperature environment throughout the deposition process. Attached Figure Description
[0016] Figure 1 This is a schematic diagram of the sample stage system of the present invention.
[0017] Figure 2 This is a top view of the sample stage in the sample stage system of the present invention.
[0018] Figure 3 This is a top view of the heating component in the sample stage system of the present invention.
[0019] Figure 4 This is a cross-sectional schematic diagram of the sample stage and heating components in the sample stage system of the present invention.
[0020] The labels in the diagram represent: 1. Sample stage; 11. Temperature zone; 2. Heating component; 21. Heating coil; 3. Temperature measuring component; 4. Temperature control module; 5. Equipment cavity; 6. Plasma. Detailed Implementation
[0021] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0022] In the description of this invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0023] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0024] In this invention, unless otherwise explicitly specified and limited, the terms "assembly," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0025] like Figures 1 to 4 As shown, the sample stage system of this embodiment includes a sample stage 1 and a heating component 2 disposed in the sample stage 1. The heating component 2 includes a plurality of heating coils 21, and each heating coil 21 is arranged in a ring around the sample stage 1 from the center to the edge. The upper surface of the sample stage 1 is provided with a plurality of annular temperature regions 11, and each heating coil 21 is arranged in a one-to-one correspondence with each temperature region 11.
[0026] In this embodiment, the sample stage system places the sample stage 1 inside the equipment cavity 5. The sample stage 1 is disc-shaped (k0 is the center of the sample stage 1) with a diameter of 1 inch to 12 inches. Due to the uneven heating of the plasma 6 on the surface of the sample stage 1, the energy is distributed in a ring shape and changes dynamically with process variations. Based on these characteristics, multiple ring-shaped temperature zones 11 are divided from the center to the edge on the surface of the sample stage 1. Each temperature zone 11 is heated by a heating coil 2, thereby ensuring uniform temperature across all temperature zones 11 on the upper surface of the sample stage 1. This embodiment's sample stage system, by dividing the sample stage into multiple temperature zones 11 and using a zoned approach for temperature control, can precisely address the problem of uneven plasma 6 energy distribution, meeting the temperature uniformity requirements of MPCVD equipment. Compared to liquid cooling, the surface temperature control method using heating coils 2 is simpler in structure, can respond promptly to temperature changes, and has high temperature control accuracy.
[0027] Furthermore, in this embodiment, the sample stage system also includes a temperature measuring component 3 and a temperature control module 4. The temperature control module 4 is connected to the temperature measuring component 3 and each heating coil 21. The temperature measuring component 3 measures the temperature of each temperature region 11 and feeds the temperature data back to the temperature control module 4 in real time. The temperature control module 4 uses the temperature of the highest temperature region 11 as a reference to dynamically output power to each heating coil 21 to achieve uniform temperature in each temperature region 11. The temperature measuring component 3 measures the temperature of each temperature region 11 and feeds the temperature data back to the temperature control module 4 in real time. The temperature control module 4 uses the temperature of the highest temperature region 11 as a reference and, based on the difference between the temperature of different temperature regions 11 and the reference temperature, outputs different power to each heating coil 21 to compensate for different heating temperatures in different temperature regions 11 until the temperature of each temperature region 11 on the surface of the sample stage 1 is uniform. This dynamic control method can effectively avoid local temperature deviations caused by fluctuations in plasma energy 6 and ensure that the sample is in a stable temperature environment throughout the deposition process. In addition, each heating coil 21 is independent of the others, and its power output can be controlled individually, making temperature control more flexible and able to meet the diverse needs of samples of different sizes and materials for temperature uniformity.
[0028] Furthermore, in this embodiment, the temperature measuring component 3 is used to measure the temperature at concentric equidistant circles of each temperature region 11. This is achieved by measuring the temperature at these concentric equidistant circles (circles with the same distance between the inner and outer rings of the temperature region 11, k in the figure). n+1 k n+2 k n+3 The temperature at point () represents the overall temperature of temperature region 11, providing good representativeness and ease of measurement. Of course, in other embodiments, multi-point measurement or other methods can also be used for temperature measurement.
[0029] Furthermore, in this embodiment, the projections of the concentric equidistant circles of the heating coil 21 and the concentric equidistant circles of the temperature region 11 on the horizontal plane overlap, that is, the heating coil 21 is located directly below the temperature region 11, which makes the heating coil 21 heating the temperature region 11 more directly and accurately, reducing heat loss and deviation during the transfer process, and ensuring that the temperature region 11 can quickly respond to the power changes of the heating coil 21.
[0030] Furthermore, in this embodiment, the width of the heating coil 21 is 1mm to 10mm, and the spacing between adjacent heating coils 21 is 1mm to 10mm. This size range can be flexibly adjusted according to the actual diameter of the sample stage 1 and the number of temperature zones 11. This ensures that the arrangement density of the heating coils 21 meets the requirements for precise temperature control, while avoiding electromagnetic interference caused by too small a spacing between the heating coils 21 or heating blind spots caused by too large a spacing.
[0031] Furthermore, in this embodiment, the heating coil 21 is a flat wire. The flat wire structure can increase the contact area between the heating coil 21 and the sample stage 1, thereby improving the heat conduction efficiency. Of course, in other embodiments, the heating coil 21 can also be a round wire, which can be selected according to the structural dimensions of the sample stage 1 and the heating requirements.
[0032] Furthermore, in this embodiment, the heating coil 21 is made of molybdenum. Molybdenum has excellent high-temperature resistance and stable chemical properties, enabling it to maintain stable heating efficiency under the high-temperature operating environment of the MPCVD equipment and extend the service life of the heating component 2. Of course, in other embodiments, the heating coil 21 can also be made of tungsten or nickel-chromium alloy.
[0033] Furthermore, in this embodiment, the heating coil 21 is fixed in the sample stage 1 by an embedded package. After the heating coil 21 is embedded in the sample stage 1, it is then filled and covered with a high-temperature thermally conductive insulating material to achieve fixation of the heating coil 21. The structure is simple and reliable. Of course, in other embodiments, the heating coil 21 can also be fixed in the sample stage 1 by a sandwich-type package.
[0034] Furthermore, in this embodiment, the temperature measuring component 3 uses infrared technology for temperature measurement. The temperature measuring component 3 is placed at the observation window of the device to perform infrared temperature measurement without contacting the surface of the sample stage 1, thus avoiding interference with the temperature field of the sample stage 1. It also enables non-contact real-time monitoring, suitable for temperature measurement scenarios in high-temperature environments. Of course, in other embodiments, the temperature measuring component 3 can also use a thermocouple or resistance temperature detector (RTD) for temperature measurement. In this case, the temperature measuring component 3 can be placed at the center of each temperature zone 11.
[0035] Furthermore, in this embodiment, both the heating coil 21 and the temperature region 11 are annular. Of course, in other embodiments, under non-ideal conditions, the plasma 6 is ellipsoidal, and the heating coil 21 and the temperature region 11 may also be elliptical annular.
[0036] Furthermore, in this embodiment, the material of the sample stage 1 can be, in addition to oxygen-free copper, molybdenum, SiC-coated graphite, solid SiC, etc.; and the shape can be, in addition to a disc shape, a square, an ellipse, or other shapes.
[0037] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make many possible variations and modifications to the technical solutions of the present invention using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the spirit and technical essence of the present invention. Therefore, any simple modifications, equivalent substitutions, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention shall still fall within the protection scope of the technical solutions of the present invention.
Claims
1. A sample stage system, characterized in that: The sample stage (1) includes a sample stage (1) and a heating component (2) disposed in the sample stage (1). The heating component (2) includes a plurality of heating coils (21). Each heating coil (21) is arranged in a ring around the sample stage (1) from the center to the edge. The upper surface of the sample stage (1) is provided with a plurality of annular temperature regions (11). Each heating coil (21) is arranged in a one-to-one correspondence with each temperature region (11).
2. The sample stage system according to claim 1, characterized in that: The sample stage system also includes a temperature measuring component (3) and a temperature control module (4). The temperature control module (4) is connected to the temperature measuring component (3) and each heating coil (21) respectively. The temperature measuring component (3) is used to measure the temperature of each temperature zone (11) and feed the temperature data back to the temperature control module (4) in real time. The temperature control module (4) is used to dynamically output power to each heating coil (21) based on the temperature of the highest temperature zone (11) to achieve uniform temperature in each temperature zone (11).
3. The sample stage system according to claim 2, characterized in that: The temperature measuring component (3) is used to measure the temperature at the concentric equidistant circles of each temperature zone (11).
4. The sample stage system according to claim 2, characterized in that: The concentric equidistant circles of the heating coil (21) and the concentric equidistant circles of the temperature region (11) overlap on the horizontal plane.
5. The sample stage system according to claim 1, characterized in that: The width of the heating coil (21) is 1mm to 10mm.
6. The sample stage system according to claim 1, characterized in that: The spacing between adjacent heating coils (21) is 1mm to 10mm.
7. The sample stage system according to claim 1, characterized in that: The heating coil (21) is a flat wire or a round wire.
8. The sample stage system according to claim 1, characterized in that: The heating coil (21) is made of molybdenum, tungsten or nickel-chromium alloy.
9. The sample stage system according to claim 1, characterized in that: The heating coil (21) is fixed in the sample stage (1) by means of embedded packaging or sandwich packaging.
10. The sample stage system according to any one of claims 2 to 9, characterized in that: The temperature measuring component (3) uses infrared, thermocouple or resistance temperature measurement.
Citation Information
Patent Citations
Sample stage uniform cooling device and microwave plasma chemical vapor deposition system
CN222499363U