Defect inhibition and process control method for dc gil insulator

Abstract

The application belongs to the technical field of direct current transmission, and particularly relates to a defect inhibition and process control method for a direct current GIL insulator, the core of which is to first establish an insulator structure model with optimal electric field distribution, then match coating material parameters and prepare a nonlinear conductive coating material based on the insulator structure model, then produce the insulator by using a vacuum pouring and gradient curing process, finally detect and evaluate the finished insulator, and evaluate the comprehensive production quality CQI of the insulator based on the evaluation calculation result, so that the macroscopic geometric shape, material properties, manufacturing process and final defect state of the insulator are linked and designed and evaluated uniformly, the optimal insulator geometric structure with optimal electric field distribution can be obtained from the design source, the blindness of traditional experience design is overcome, the systematicness and consistency of the technical scheme are ensured, and the closed loop method can greatly improve the overall performance of the direct current GIL insulator.

Description

Technical Field

[0001] This invention belongs to the field of DC power transmission technology, specifically relating to a method for suppressing defects and controlling the process of DC GIL insulators. Background Technology

[0002] Gas-insulated metal-enclosed transmission lines (GILs) are high-capacity transmission equipment that uses compressed gas insulation and a conductor shell for power transmission. In high-voltage direct current (HVDC) applications, the insulators inside the GIL are subjected to steady-state DC electric fields, polarity reversal, and transient overvoltages for extended periods. Unlike traditional alternating current (AC) electric fields, space charges tend to accumulate inside the insulating medium or at the interface under DC electric fields, leading to severe distortion of the electric field. This can accelerate insulation aging, trigger partial discharge, and even cause insulation breakdown.

[0003] Existing technical solutions are mostly isolated studies, either improving the initial electric field distribution by optimizing the contour curve or studying the parameter effects of nonlinear conductive coating materials. Structural optimization does not consider the actual electrical characteristic requirements of subsequent material modification processes, and material selection fails to accurately match the specific optimized geometry, which may lead to poor synergy. Moreover, the design, manufacturing, and testing stages are independent, lacking a unified quantitative evaluation system from simulation indicators to physical quality, making it difficult to scientifically classify and control the comprehensive performance of the final product.

[0004] To address the aforementioned issues, this application presents a method for defect suppression and process control in DC GIL insulators. Summary of the Invention

[0005] To address the shortcomings of existing technologies mentioned in the background section, this application proposes a method for defect suppression and process control of DC GIL insulators. The core of this method lies in first establishing an insulator structure model with optimal electric field distribution, then matching coating material parameters based on the insulator structure model and formulating a nonlinear conductivity coating material, followed by vacuum casting and gradient curing processes to produce the insulators, and finally, testing and evaluating the finished insulators based on the evaluation results to assess the overall production quality of the insulators. Evaluation calculations are performed to link and uniformly evaluate the macroscopic geometry, material properties, manufacturing process, and final defect state of the insulator in order to solve the problems in the background technology.

[0006] Firstly, to achieve the above objectives, this application provides a method for suppressing defects and controlling the process of DC GIL insulators, which includes the following specific steps:

[0007] S1. Based on the DC GIL three-dimensional model, the insulator profile is described by parametric curves. The inclination angle of the shed, the extension length of the shed, and the spacing of the shed are used as design variables. The optimization objectives are to maximize the electric field uniformity coefficient and minimize the maximum field strength. The optimal geometric control parameters are solved iteratively by intelligent optimization algorithm to obtain the insulator structure model with the optimal electric field distribution.

[0008] S2. Based on the optimal insulator structure model obtained in S1, a virtual functional material layer is constructed at its gas-solid interface. Through simulation, the surface electric field distortion rate and power loss of the insulator structure under typical working conditions are analyzed under different combinations of ohmic conductivity and nonlinear coefficients.

[0009] S3. Based on the defined benefit-loss evaluation function, the optimal combination of material parameters is obtained;

[0010] S4. Obtain the optimal combination of material parameters determined in S3, and formulate the nonlinear conductivity coating material.

[0011] S5. Insulators are produced using vacuum casting and gradient curing processes;

[0012] S6. Conduct testing and evaluation calculations on the finished insulators, and assess the overall production quality of the insulators based on the evaluation calculation results. Conduct evaluation and calculation to comprehensively assess production quality. The evaluation calculation formula is as follows: ;

[0013] in, , , , These are the shape matching factor, material matching factor, defect risk factor, and partial discharge factor. , , , They are respectively , , , The weighting coefficients, .

[0014] Based on the above-mentioned preferred method, the finished insulators are tested and evaluated using calculations, and the overall production quality of the insulators is assessed based on the evaluation and calculation results. The evaluation calculation includes the following steps:

[0015] S61. Using a high-precision industrial 3D laser scanner, perform a full-range scan of the finished insulator to obtain cloud data of its surface contour, and based on the cloud data, determine the shape matching factor. The formula for calculating the shape matching factor is as follows: ,in, , , These are the matching degrees of the umbrella skirt angle, the matching degree of the umbrella skirt extension length, and the matching degree of the umbrella skirt spacing. , , They are respectively , , The weighting coefficients, ;

[0016] S62. Measured ohmic conductivity of finished insulators and measured nonlinear coefficient Conduct testing, and adjust the material matching factor based on the test results. The formula for calculating the material matching factor is as follows: ;

[0017] in, and These are the optimal ohmic conductivity and optimal nonlinear coefficient determined in step S3, respectively. and These are the weighting coefficients. ;

[0018] S63. An ultrasonic phased array automatic scanning system is used to scan the finished insulator layer by layer to identify and record all internal defects. Then, based on the detected defect information, a defect risk factor is determined. Calculate the defect risk factor. The calculation formula is: ;

[0019] in, This represents the number of defects. Let be the volume of the i-th group of defects. The safe volume for defects;

[0020] S64. Based on partial discharge test results, the partial discharge factor... Calculations are performed on the partial discharge factor. The calculation formula is: ;

[0021] in, This represents the maximum local discharge of the finished insulator. This is the maximum permissible discharge amount required by the technical standards;

[0022] S65. Calculate the shape matching factor. Material matching factor Defect risk factors Partial discharge factor Substituting this into the comprehensive production quality assessment formula for insulators to evaluate the overall production quality Perform evaluation calculations;

[0023] S66, calculate the The value is compared with a threshold range determined in advance through experiments and statistics to determine the quality level and generate a comprehensive quality assessment report for the insulator.

[0024] Based on the above scheme, the preferred method is to obtain the umbrella skirt tilt angle by fitting the point cloud of the umbrella skirt surface to obtain a plane, and then calculate the angle with the axis. The umbrella skirt extension length is obtained by calculating the distance from the edge point of the umbrella skirt to the axis and then subtracting the core rod radius. The umbrella skirt spacing is obtained by calculating the distance between adjacent edge points of the umbrella skirt in the axial direction.

[0025] The preferred option based on the above scheme is the skirt inclination matching degree. Matching degree of the extended length of the umbrella skirt Matching degree of umbrella skirt spacing The calculation formulas are as follows:

[0026] ; ; ;

[0027] in, For the separately measured skirt inclination matching degree Matching degree of the extended length of the umbrella skirt Matching degree of umbrella skirt spacing Quantity, , , These are the set umbrella skirt angle, the set umbrella skirt extension length, and the set umbrella skirt spacing. , , These represent the measured inclination angle of the i-th group of umbrella skirts, the extension length of the i-th group of umbrella skirts, and the spacing between the i-th group of umbrella skirts, respectively.

[0028] Based on the above scheme, the optimal one is the calculated one. The value is compared with a threshold range determined in advance through experiments and statistics to determine the quality level and generate a comprehensive insulator quality assessment report, including the following steps:

[0029] S661. Obtain the four grades of non-compliant, compliant, good, and excellent, which are determined in advance through experiments and statistics. Threshold range;

[0030] S662. Obtain the comprehensive production quality calculated in step S65. The value;

[0031] S663. Employ a step-by-step judgment logic from high to low, and... The value is compared with the set threshold range;

[0032] S664, Explicit Output The value corresponds to the quality level, and a comprehensive quality assessment report for the insulator is generated.

[0033] Based on the above scheme, the preferred method is to use vacuum casting and gradient curing process to produce insulators, including the following steps:

[0034] S51. The mixed and fully degassed casting material is injected into the preheated mold under a vacuum environment of higher than 50 Pa.

[0035] S52. A multi-stage gradient temperature curing procedure is adopted: the first stage is 80-90℃, 2-4h to achieve slow gelation and reduce internal stress; the second stage is 100-110℃, 3-5h to complete the main cross-linking reaction; the third stage is 120-135℃, 5-8h to promote post-curing and improve the degree of curing.

[0036] S53. During the curing process, controllable mechanical pressure and DC bias voltage are applied simultaneously. During the second stage of crosslinking reaction, a uniform mechanical pressure of 0.5-2MPa is applied along the insulator axis to promote material densification and reduce shrinkage porosity. At the same time, a DC bias voltage of 10-30kV is applied to the simulated electrodes at both ends of the insulator, with the direction consistent with the actual operating electric field. This electric field can cause the polar molecular chain segments in the insulating material and the dipoles at the filler interface to be ordered to a certain extent, forming a pre-modulated dielectric state, which helps to reduce the initial space charge injection during operation.

[0037] Secondly, this application provides an electronic device, including: a processor and a memory, wherein the memory stores a computer program that can be called by the processor;

[0038] The processor executes the aforementioned DC GIL insulator defect suppression and process control method by calling the computer program stored in the memory.

[0039] Thirdly, this application provides a computer-readable storage medium storing instructions that, when executed on a computer, cause the computer to perform the DC GIL insulator defect suppression and process control method described above.

[0040] Compared with the prior art, the beneficial effects of the present invention are:

[0041] 1. This invention establishes a parameterized three-dimensional model of an insulator and takes maximizing the electric field uniformity coefficient and minimizing the maximum field strength as clear objectives. It combines intelligent optimization algorithms for iterative solution, which can obtain the insulator geometry with the optimal electric field distribution from the design source. This overcomes the blindness of traditional empirical design, significantly improves the uniformity of the electric field of the insulator body, and reduces the risk of excessively high local field strength.

[0042] 2. Innovatively, a virtual functional material layer is introduced into the optimized gas-solid interface of the insulator. By simulating and analyzing the effects of different combinations of electrical conductivity characteristics on the surface electric field distortion and self-loss, and using the benefit-loss evaluation function, the optimal nonlinear conductivity material parameters that match a specific optimal structure can be quantitatively determined. This enables deep collaborative design of the macroscopic geometry of the insulator and the microscopic interface material properties, ensuring that the insulator has adaptive voltage equalization and low loss characteristics under typical operating conditions.

[0043] 3. The use of vacuum casting and multi-stage gradient curing processes, combined with the simultaneous application of axial mechanical pressure and DC bias voltage during the key crosslinking stage, has multiple benefits. Mechanical pressure promotes the densification of the epoxy resin matrix, effectively reducing internal porosity and microcracks caused by curing shrinkage. The application of DC bias voltage causes the polar molecular chains and filler interface dipoles inside the insulating material to be pre-oriented in the direction of the actual operating electric field, forming a pre-modulated dielectric state. This process innovation not only reduces manufacturing defects but also helps to suppress space charge injection and accumulation in the early stage of insulator operation, improving insulation stability under DC voltage.

[0044] 4. The proposed Comprehensive Quality Index (CQI) and its calculation method break through the limitations of traditional single qualification criteria. This system, through four dimensions—shape matching factor, material matching factor, defect risk factor, and partial discharge factor—and assigning them scientific weights, achieves a comprehensive quantitative evaluation of insulators in terms of geometric accuracy, material performance, internal defects, and discharge characteristics. This not only provides a precise grading basis for factory quality but also ensures that the calculation of each factor is based on specific measured data such as 3D scanning, conductivity testing, ultrasonic testing, and partial discharge testing. This makes the quality evaluation results objective and traceable, facilitating process retrospective and continuous improvement. This invention organically integrates structural optimization design, material parameter selection, advanced process control, and multi-dimensional quality evaluation into a coherent technical process, ensuring the systematicness and consistency of the technical solution. This closed-loop method can significantly improve the overall performance of DC GIL insulators. Attached Figure Description

[0045] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings:

[0046] Figure 1 This is a schematic diagram of the overall process of the DC GIL insulator defect suppression and process control method of the present invention;

[0047] Figure 2 This is a flowchart of step S6 in the DC GIL insulator defect suppression and process control method of the present invention. Detailed Implementation

[0048] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0049] Example 1

[0050] To address the technical problems raised in the background art, this application provides a preferred embodiment: such as Figures 1-2 As shown, the method for defect suppression and process control of DC GIL insulators includes the following specific steps:

[0051] S1. Based on the DC GIL three-dimensional model, the insulator profile is described by parametric curves. The inclination angle of the shed, the extension length of the shed, and the spacing of the shed are used as design variables. The optimization objectives are to maximize the electric field uniformity coefficient and minimize the maximum field strength. The optimal geometric control parameters are solved iteratively by intelligent optimization algorithm to obtain the insulator structure model with the optimal electric field distribution.

[0052] S2. Based on the optimal insulator structure model obtained in S1, a virtual functional material layer is constructed at its gas-solid interface. Through simulation, the surface electric field distortion rate and power loss of the insulator structure under typical working conditions are analyzed under different combinations of ohmic conductivity and nonlinear coefficients.

[0053] S3. Based on the defined benefit-loss evaluation function, the optimal combination of material parameters is obtained;

[0054] S4. Obtain the optimal combination of material parameters determined in S3, and formulate the nonlinear conductivity coating material.

[0055] S5. Insulators are produced using vacuum casting and gradient curing processes;

[0056] S6. Conduct testing and evaluation calculations on the finished insulators, and assess the overall production quality of the insulators based on the evaluation calculation results. Conduct evaluation and calculation to comprehensively assess production quality. The evaluation calculation formula is as follows: ;

[0057] in, , , , These are the shape matching factor, material matching factor, defect risk factor, and partial discharge factor. , , , They are respectively , , , The weighting coefficients, .

[0058] It should be noted that steps 3 and 4 aim to use quantitative analysis to select the optimal solution that best balances the electric field averaging effect and its own power loss from a series of possible combinations of nonlinear conductivity material parameters. The detailed steps are as follows: First, establish a comprehensive evaluation function. Then, under typical working conditions, each set of material parameter combinations was tested. Perform electric field-current field coupling simulation and extract the maximum distortion rate of the electric field along the surface of the insulator. and steady-state power loss of insulator functional material layer Then, the maximum distortion rate under all material parameter combinations. and steady-state power loss Substitution The function calculates the overall score for each combination and finally selects the combination that makes the best choice. The largest value The combination refers to the optimal combination of material parameters. It should be noted that the function Two key indicators, benefit and loss, need to be considered simultaneously. The benefit measure is the material's improvement on the surface electric field distribution of the insulator, typically characterized by the reduction in the surface electric field distortion rate. Lower distortion rate results in a more uniform electric field and higher benefit. The loss measure is the material's own steady-state power loss due to conductivity during operation. Lower loss indicates higher operating efficiency and better thermal stability. Then, based on these two key indicators, a scoring function is established for each group of candidate material parameters. .

[0059] The advantages of this embodiment compared to the prior art are as follows: It innovatively introduces a virtual functional material layer into the optimized gas-solid interface of the insulator. By simulating and analyzing the influence of different combinations of electrical conductivity characteristics on the electric field distortion and self-loss along the surface, and by using the benefit-loss evaluation function, the optimal nonlinear conductivity material parameters that match a specific optimal structure can be quantitatively determined. This enables the deep collaborative design of the macroscopic geometry of the insulator and the microscopic interface material properties, and ensures that the insulator has adaptive voltage equalization and low loss characteristics under typical operating conditions.

[0060] Furthermore:

[0061] In one optional embodiment, the finished insulators are tested and evaluated using calculations, and the overall production quality of the insulators is assessed based on the evaluation results. The evaluation calculation includes the following steps:

[0062] S61. Using a high-precision industrial 3D laser scanner, perform a full-range scan of the finished insulator to obtain cloud data of its surface contour, and based on the cloud data, determine the shape matching factor. The formula for calculating the shape matching factor is as follows: ,in, , , These are the matching degrees of the umbrella skirt angle, the matching degree of the umbrella skirt extension length, and the matching degree of the umbrella skirt spacing. , , They are respectively , , The weighting coefficients, ;

[0063] S62. Measured ohmic conductivity of finished insulators and measured nonlinear coefficient Conduct testing, and adjust the material matching factor based on the test results. The formula for calculating the material matching factor is as follows:

[0064] ;

[0065] in, and These are the optimal ohmic conductivity and optimal nonlinear coefficient determined in step S3, respectively. and These are the weighting coefficients. ;

[0066] S63. An ultrasonic phased array automatic scanning system is used to scan the finished insulator layer by layer to identify and record all internal defects. Then, based on the detected defect information, a defect risk factor is determined. Calculate the defect risk factor. The calculation formula is: ;

[0067] in, This represents the number of defects. Let be the volume of the i-th group of defects. The safe volume for defects;

[0068] S64. Based on partial discharge test results, the partial discharge factor... Calculations are performed on the partial discharge factor. The calculation formula is: ;

[0069] in, This represents the maximum local discharge of the finished insulator. This is the maximum permissible discharge amount required by the technical standards;

[0070] S65. Calculate the shape matching factor. Material matching factor Defect risk factors Partial discharge factor Substituting this into the comprehensive production quality assessment formula for insulators to evaluate the overall production quality Perform evaluation calculations;

[0071] S66, calculate the The value is compared with a threshold range determined in advance through experiments and statistics to determine the quality level and generate a comprehensive quality assessment report for the insulator.

[0072] The advantages of this embodiment compared to existing technologies are as follows: The proposed Comprehensive Quality Index (CQI) and its calculation method break through the limitations of traditional single qualification criteria. This system, through four dimensions—shape matching factor, material matching factor, defect risk factor, and partial discharge factor—and assigning them scientific weights, achieves a comprehensive quantitative evaluation of insulators in terms of geometric accuracy, material performance, internal defects, and discharge characteristics. This not only provides a precise grading basis for factory quality, but also ensures that the calculation of each factor is based on specific measured data such as 3D scanning, conductivity testing, ultrasonic testing, and partial discharge testing. This makes the quality evaluation results objective and traceable, facilitating process retrospective and continuous improvement. This invention organically integrates structural optimization design, material parameter selection, advanced process control, and multi-dimensional quality evaluation into a coherent technical process, ensuring the systematicness and consistency of the technical solution. This closed-loop method can significantly improve the overall performance of DC GIL insulators.

[0073] In an optional embodiment, the skirt inclination angle is obtained by fitting the point cloud of the skirt surface to obtain a plane, and then calculating the angle with the axis. The skirt extension length is obtained by calculating the distance from the skirt edge point to the axis and then subtracting the core radius. The skirt spacing is obtained by calculating the distance between adjacent skirt edge points in the axial direction.

[0074] In an optional embodiment, the skirt inclination matching degree Matching degree of the extended length of the umbrella skirt Matching degree of umbrella skirt spacing The calculation formulas are as follows:

[0075] ; ; ;

[0076] in, For the separately measured skirt inclination matching degree Matching degree of the extended length of the umbrella skirt Matching degree of umbrella skirt spacing Quantity, , , These are the set umbrella skirt angle, the set umbrella skirt extension length, and the set umbrella skirt spacing. , , These represent the measured inclination angle of the i-th group of umbrella skirts, the extension length of the i-th group of umbrella skirts, and the spacing between the i-th group of umbrella skirts, respectively.

[0077] It should be noted that the actual measured umbrella skirt angle, umbrella skirt extension length, and umbrella skirt spacing are different from the set umbrella skirt angle. Length of the umbrella skirt Umbrella skirt spacing The smaller the deviation value, the better the calculated skirt inclination matching degree. Matching degree of the extended length of the umbrella skirt Matching degree of umbrella skirt spacing The larger the value, the higher the final calculated shape matching factor. The larger the value, the higher the measured ohmic conductivity of the finished insulator. and measured nonlinear coefficient The smaller the difference between the numerical values ​​of the optimal ohmic conductivity and the optimal nonlinear coefficient determined in step S3, the better the material matching factor. The larger the value, the better the shape matching factor. Material matching factor Related to the degree of achievement of design goals, the higher the value of the benefit factor, the better; conversely, the lower the value of the defect risk factor, the better. With partial discharge factor For cost factors, the smaller the value, the better; ultimately, the cost factor is based on the shape matching factor. Material matching factor Defect risk factors Partial discharge factor Calculated overall production quality The higher the value, the higher the overall production quality.

[0078] Furthermore:

[0079] In an optional embodiment, the calculated The value is compared with a threshold range determined in advance through experiments and statistics to determine the quality level and generate a comprehensive insulator quality assessment report, including the following steps:

[0080] S661. Obtain the four grades of non-compliant, compliant, good, and excellent, which are determined in advance through experiments and statistics. Threshold range;

[0081] S662. Obtain the comprehensive production quality calculated in step S65. The value;

[0082] S663. Employ a step-by-step judgment logic from high to low, and... The value is compared with the set threshold range;

[0083] S664, Explicit Output The value corresponds to the quality level, and a comprehensive quality assessment report for the insulator is generated.

[0084] In an optional embodiment, the insulator is manufactured using a vacuum casting and gradient curing process, including the following steps:

[0085] S51. The mixed and fully degassed casting material is injected into the preheated mold under a vacuum environment of higher than 50 Pa.

[0086] S52. A multi-stage gradient temperature curing procedure is adopted: the first stage is 80-90℃, 2-4h to achieve slow gelation and reduce internal stress; the second stage is 100-110℃, 3-5h to complete the main cross-linking reaction; the third stage is 120-135℃, 5-8h to promote post-curing and improve the degree of curing.

[0087] S53. During the curing process, controllable mechanical pressure and DC bias voltage are applied simultaneously. During the second stage of crosslinking reaction, a uniform mechanical pressure of 0.5-2MPa is applied along the insulator axis to promote material densification and reduce shrinkage porosity. At the same time, a DC bias voltage of 10-30kV is applied to the simulated electrodes at both ends of the insulator, with the direction consistent with the actual operating electric field. This electric field can cause the polar molecular chain segments in the insulating material and the dipoles at the filler interface to be ordered to a certain extent, forming a pre-modulated dielectric state, which helps to reduce the initial space charge injection during operation.

[0088] The advantages of this embodiment compared to the prior art are as follows: the use of vacuum casting and multi-stage gradient curing process, combined with the simultaneous application of axial mechanical pressure and DC bias voltage during the key crosslinking stage, has multiple benefits. The mechanical pressure promotes the densification of the epoxy resin matrix, effectively reducing internal porosity and microcracks caused by curing shrinkage. The application of DC bias voltage causes the polar molecular chains and filler interface dipoles inside the insulating material to be pre-oriented in the direction of the actual operating electric field, forming a pre-modulated dielectric state. This process innovation not only reduces manufacturing defects, but also helps to suppress space charge injection and accumulation in the early stage of insulator operation, and improves insulation stability under DC voltage.

[0089] Example 2

[0090] Based on the same inventive concept as Embodiment 1, this embodiment provides an electronic device, including: a processor and a memory, wherein the memory stores a computer program that can be called by the processor;

[0091] The processor executes the aforementioned DC GIL insulator defect suppression and process control method by calling the computer program stored in the memory.

[0092] It should be noted that all computer programs for the DC GIL insulator defect suppression and process control method are implemented using the C language.

[0093] Example 3

[0094] Based on the same inventive concept as in Embodiment 1, this embodiment proposes a computer-readable storage medium having an erasable and rewritable computer program stored thereon.

[0095] When the computer program runs on the computer device, it causes the computer device to execute the aforementioned DC GIL insulator defect suppression and process control method.

[0096] For example, computer-readable storage media can be read-only memory, random access memory, read-only optical disc, magnetic tape, floppy disk, and optical data storage devices.

[0097] The various embodiments in this invention are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on its differences from other embodiments. In particular, the embodiments for IoT devices and media are relatively simple in description because they are fundamentally similar to the method embodiments; relevant parts can be referred to the descriptions in the method embodiments.

[0098] The systems, media, and methods provided in the embodiments of the present invention are in one-to-one correspondence. Therefore, the systems and media also have similar beneficial technical effects as their corresponding methods. Since the beneficial technical effects of the methods have been described in detail above, the beneficial technical effects of the systems and media will not be repeated here.

[0099] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0100] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, as well as combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0101] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0102] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0103] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0104] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0105] Computer-readable media include both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0106] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. The above are merely embodiments of the present invention and are not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A method for defect suppression and process control in DC GIL insulators, characterized in that, Includes the following steps: S1. Based on the DC GIL three-dimensional model, the insulator profile is described by parametric curves. The inclination angle of the shed, the extension length of the shed, and the spacing of the shed are used as design variables. The optimization objectives are to maximize the electric field uniformity coefficient and minimize the maximum field strength. The optimal geometric control parameters are solved iteratively by intelligent optimization algorithm to obtain the insulator structure model with the optimal electric field distribution. S2. Based on the optimal insulator structure model obtained in S1, a virtual functional material layer is constructed at its gas-solid interface. Through simulation, the surface electric field distortion rate and power loss of the insulator structure under typical working conditions are analyzed under different combinations of ohmic conductivity and nonlinear coefficients. S3. Based on the defined benefit-loss evaluation function, the optimal combination of material parameters is obtained; S4. Obtain the optimal combination of material parameters determined in S3, and formulate the nonlinear conductivity coating material. S5. Insulators are produced using vacuum casting and gradient curing processes; S6. Conduct testing and evaluation calculations on the finished insulators, and assess the overall production quality of the insulators based on the evaluation calculation results. Conduct evaluation and calculation to comprehensively assess production quality. The evaluation calculation formula is as follows: ； in, , , , These are the shape matching factor, material matching factor, defect risk factor, and partial discharge factor. , , , They are respectively , , , The weighting coefficients, .

2. The method for suppressing defects and controlling the process of DC GIL insulators according to claim 1, characterized in that: The finished insulators are tested and evaluated using calculations, and the overall production quality of the insulators is assessed based on the evaluation results. The evaluation calculation includes the following steps: S61. Using a high-precision industrial 3D laser scanner, perform a full-range scan of the finished insulator to obtain cloud data of its surface contour, and based on the cloud data, determine the shape matching factor. The formula for calculating the shape matching factor is as follows: ,in, , , These are the matching degrees of the umbrella skirt angle, the matching degree of the umbrella skirt extension length, and the matching degree of the umbrella skirt spacing. , , They are respectively , , The weighting coefficients, ; S62. Measured ohmic conductivity of finished insulators and measured nonlinear coefficient Conduct testing, and adjust the material matching factor based on the test results. The formula for calculating the material matching factor is as follows: ; in, and These are the optimal ohmic conductivity and optimal nonlinear coefficient determined in step S3, respectively. and These are the weighting coefficients. ; S63. An ultrasonic phased array automatic scanning system is used to scan the finished insulator layer by layer to identify and record all internal defects. Then, based on the detected defect information, a defect risk factor is determined. Calculate the defect risk factor. The calculation formula is: ; in, This represents the number of defects. Let be the volume of the i-th group of defects. The safe volume for defects; S64. Based on partial discharge test results, the partial discharge factor... Calculations are performed on the partial discharge factor. The calculation formula is: ; in, This represents the maximum local discharge of the finished insulator. This is the maximum permissible discharge amount required by the technical standards; S65. Calculate the shape matching factor. Material matching factor Defect risk factors Partial discharge factor Substituting this into the comprehensive production quality assessment formula for insulators to evaluate the overall production quality Perform evaluation calculations; S66, calculate the The value is compared with a threshold range determined in advance through experiments and statistics to determine the quality level and generate a comprehensive quality assessment report for the insulator.

3. The method for suppressing defects and controlling the process of DC GIL insulators according to claim 2, characterized in that: The inclination angle of the umbrella skirt is obtained by fitting the point cloud on the umbrella skirt surface to obtain a plane, and then calculating the angle with the axis. The extension length of the umbrella skirt is obtained by calculating the distance from the edge point of the umbrella skirt to the axis and then subtracting the core radius. The spacing between the umbrella skirts is obtained by calculating the distance between adjacent edge points of the umbrella skirt in the axial direction.

4. The method for suppressing defects and controlling the process of DC GIL insulators according to claim 3, characterized in that: A-line skirt angle matching Matching degree of the extended length of the umbrella skirt Matching degree of umbrella skirt spacing The calculation formulas are as follows: ; ; ; in, For the separately measured skirt inclination matching degree Matching degree of the extended length of the umbrella skirt Matching degree of umbrella skirt spacing Quantity, , , These are the set umbrella skirt angle, the set umbrella skirt extension length, and the set umbrella skirt spacing. , , These represent the measured inclination angle of the i-th group of umbrella skirts, the extension length of the i-th group of umbrella skirts, and the spacing between the i-th group of umbrella skirts, respectively.

5. The method for suppressing defects and controlling the process of DC GIL insulators according to claim 4, characterized in that: Calculated The value is compared with a threshold range determined in advance through experiments and statistics to determine the quality level and generate a comprehensive insulator quality assessment report, including the following steps: S661. Obtain the four grades of non-compliant, compliant, good, and excellent, which are determined in advance through experiments and statistics. Threshold range; S662. Obtain the comprehensive production quality calculated in step S65. The value; S663. Employ a step-by-step judgment logic from high to low, and... The value is compared with the set threshold range; S664, Explicit Output The value corresponds to the quality level, and a comprehensive quality assessment report for the insulator is generated.

6. The method for suppressing defects and controlling the process of DC GIL insulators according to claim 1, characterized in that: The insulator is manufactured using a vacuum casting and gradient curing process, including the following steps: S51. The mixed and fully degassed casting material is injected into the preheated mold under a vacuum environment of higher than 50 Pa. S52. A multi-stage gradient temperature curing procedure is adopted: the first stage is 80-90℃, 2-4h to achieve slow gelation and reduce internal stress; the second stage is 100-110℃, 3-5h to complete the main cross-linking reaction; the third stage is 120-135℃, 5-8h to promote post-curing and improve the degree of curing. S53. During the curing process, controllable mechanical pressure and DC bias voltage are applied simultaneously. During the second stage of crosslinking reaction, a uniform mechanical pressure of 0.5-2MPa is applied along the insulator axis to promote material densification and reduce shrinkage porosity. At the same time, a DC bias voltage of 10-30kV is applied to the simulated electrodes at both ends of the insulator, with the direction consistent with the actual operating electric field. This electric field can cause the polar molecular chain segments in the insulating material and the dipoles at the filler interface to be ordered to a certain extent, forming a pre-modulated dielectric state, which helps to reduce the initial space charge injection during operation.

7. An electronic device, comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor, characterized in that: the processor executes the DC GIL insulator defect suppression and process control method as described in any one of claims 1-6 by calling the computer program stored in the memory.

8. A computer-readable storage medium, characterized in that: The device stores instructions that, when executed on a computer, cause the computer to perform the DC GIL insulator defect suppression and process control method as described in any one of claims 1-6.

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