Light emitting apparatus, electronic apparatus, and method of manufacturing light emitting apparatus

Abstract

A light emitting device according to an embodiment of the present disclosure includes: a substrate including a light emitting region and a non-light emitting region; a plurality of light emitting portions disposed in the light emitting area; a protective layer disposed over the light emitting region and the non-light emitting region so as to cover the plurality of light emitting portions; and a color filter layer disposed on the protective layer, in which a thickness of the protective layer is different in the light emitting region and the non-light emitting region.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device, an electronic device, and a method for manufacturing the light-emitting device. Background Technology

[0002] In recent years, light-emitting elements that include a current-driven light-emitting portion have been developed. For example, light-emitting elements using organic electroluminescent elements (organic EL elements) as the light-emitting portion have attracted attention as light-emitting elements that can be driven by a low DC voltage to emit light with high brightness. In addition to the light-emitting portion, the light-emitting element also includes a color filter layer (CF layer), a protective layer (sealing layer), etc. (see, for example, PTL 1). For example, the light-emitting portion is formed by providing an organic layer between the anode and the cathode. The color filter layer is disposed above the light-emitting portion, with a protective layer in between.

[0003] For example, in display devices where such light-emitting elements are used as pixels, the pixel size decreases as the resolution increases. Furthermore, to prevent degradation of color viewing angle characteristics, there is a trend towards shortening the distance between the organic layer and the color filter layer. To shorten the distance between layers, it is desirable to reduce the thickness of the protective layer.

[0004] Reference List

[0005] Patent documents

[0006] PTL 1: JP 2015-11855 A Summary of the Invention

[0007] Technical issues

[0008] However, when the protective layer is thin, the sealing reliability is insufficient. For example, when patterning is achieved using a mask during the formation of organic layers, electrodes, etc., the mask and substrate come into contact with each other during formation. Therefore, dents can form on the substrate due to the mask, or foreign matter attached to the mask can be transferred to one side of the substrate. Moisture can enter from the outside through defects originating from these dents or foreign matter, damaging the organic layers, electrodes, etc. Thus, when moisture penetrates from the outside, non-light-emitting areas can form in the pixel region, reducing the reliability of the device.

[0009] Therefore, this disclosure provides a light-emitting device, an electronic device, and a method for manufacturing the light-emitting device, through which it is possible to improve the reliability of the device.

[0010] Solution to the problem

[0011] A light-emitting device according to one aspect of the present disclosure includes: a substrate, the substrate including a light-emitting region and a non-light-emitting region; a plurality of light-emitting portions disposed in the light-emitting region; a protective layer disposed over the light-emitting region and the non-light-emitting region to cover the plurality of light-emitting portions; and a color filter layer disposed on the protective layer, wherein the thickness of the protective layer is different in the light-emitting region and the non-light-emitting region.

[0012] An electronic device according to one aspect of the present disclosure includes a light-emitting device, and the light-emitting device includes: a substrate including a light-emitting region and a non-light-emitting region; a plurality of light-emitting portions disposed in the light-emitting region; a protective layer disposed over the light-emitting region and the non-light-emitting region to cover the plurality of light-emitting portions; and a color filter layer disposed on the protective layer, wherein the thickness of the protective layer is different in the light-emitting region and the non-light-emitting region.

[0013] A method for manufacturing a light-emitting device according to one aspect of this disclosure includes: providing a plurality of light-emitting portions in a light-emitting region on a substrate including a light-emitting region and a non-light-emitting region; providing a protective layer over the light-emitting region and the non-light-emitting region to cover the plurality of light-emitting portions; and providing a color filter layer on the protective layer, wherein the thickness of the protective layer is different in the light-emitting region and the non-light-emitting region. Attached Figure Description

[0014] Figure 1 This is a diagram illustrating an example configuration of a display device according to an embodiment of the present disclosure.

[0015] Figure 2 This is a diagram illustrating an example of the circuit configuration of a light-emitting element according to an embodiment of the present disclosure.

[0016] Figure 3 This is a diagram illustrating an example configuration of the structure of a light-emitting element according to an embodiment of the present disclosure.

[0017] Figure 4 This is a diagram illustrating an example of the arrangement of areas in a display device according to embodiments of the present disclosure.

[0018] Figure 5 This is a diagram of Example 1 used to describe a display device according to an embodiment of the present disclosure.

[0019] Figure 6 This is a diagram of Example 1 used to describe a display device according to an embodiment of the present disclosure.

[0020] Figure 7 This is a diagram used to describe a comparative example 1 of a display device according to an embodiment of the present disclosure.

[0021] Figure 8This is a diagram of Example 2 used to describe a display device according to an embodiment of the present disclosure.

[0022] Figure 9 This is a diagram of Example 3 used to describe a display device according to an embodiment of the present disclosure.

[0023] Figure 10 This is a figure for illustrating Example 4 of a display device according to an embodiment of the present disclosure.

[0024] Figure 11 This is a diagram of Example 5 used to describe a display device according to an embodiment of the present disclosure.

[0025] Figure 12 This is a figure for illustrating Example 6 of a display device according to an embodiment of the present disclosure.

[0026] Figure 13 This is a figure for illustrating Example 7 of a display device according to an embodiment of the present disclosure.

[0027] Figure 14 This is a figure for illustrating Example 8 of a display device according to an embodiment of the present disclosure.

[0028] Figure 15 This is a diagram illustrating a process example for describing a method of manufacturing a display device according to embodiments of the present disclosure.

[0029] Figure 16 This is a diagram illustrating a process example for describing a method of manufacturing a display device according to embodiments of the present disclosure.

[0030] Figure 17 This is a diagram illustrating a process example for describing a method of manufacturing a display device according to embodiments of the present disclosure.

[0031] Figure 18 This is a diagram illustrating a process example for describing a method of manufacturing a display device according to embodiments of the present disclosure.

[0032] Figure 19 This is a diagram illustrating an example of the shape of the planar shape of the stepped portion of the protective layer according to an embodiment of the present disclosure.

[0033] Figure 20 This is a diagram illustrating an example of the shape of the planar shape of the stepped portion of the protective layer according to an embodiment of the present disclosure.

[0034] Figure 21 This is a diagram illustrating an example of the shape of the planar shape of the stepped portion of the protective layer according to an embodiment of the present disclosure.

[0035] Figure 22This is a diagram illustrating an example of the shape of the planar shape of the stepped portion of the protective layer according to an embodiment of the present disclosure.

[0036] Figure 23 This is a schematic cross-sectional view used to describe a first example of a resonator structure.

[0037] Figure 24 This is a schematic cross-sectional view used to describe a second example of a resonator structure.

[0038] Figure 25 This is a schematic cross-sectional view used to describe a third example of a resonator structure.

[0039] Figure 26 This is a schematic cross-sectional view used to describe the fourth example of a resonator structure.

[0040] Figure 27 This is a schematic cross-sectional view used to describe the fifth example of a resonator structure.

[0041] Figure 28 This is a schematic cross-sectional view used to describe the sixth example of a resonator structure.

[0042] Figure 29 This is a schematic cross-sectional view used to describe the seventh example of a resonator structure.

[0043] Figure 30 This is a conceptual diagram used to describe a first example of a shift structure.

[0044] Figure 31 This is a conceptual diagram used to describe a second example of a shift structure.

[0045] Figure 32 This is a conceptual diagram used to describe a third example of a shift structure.

[0046] Figure 33 This is a conceptual diagram used to describe the fourth example of a shift structure.

[0047] Figure 34 This is a conceptual diagram used to describe the fifth example of a shift structure.

[0048] Figure 35 This is a conceptual diagram used to describe the sixth example of a shift structure.

[0049] Figure 36 This is a conceptual diagram used to describe the seventh example of a shift structure.

[0050] Figure 37 This is an example diagram illustrating the appearance of a smartphone.

[0051] Figure 38 This is an example illustration of the appearance of a digital still camera.

[0052] Figure 39 This is an example illustration of the appearance of a digital still camera.

[0053] Figure 40 This is an example illustration of the appearance of a head-mounted display.

[0054] Figure 41 This is an example illustration of the appearance of a see-through head-mounted display.

[0055] Figure 42 This is an example diagram illustrating the appearance of a television device.

[0056] Figure 43 This is an example diagram illustrating the interior configuration of a vehicle.

[0057] Figure 44 This is an example diagram illustrating the interior configuration of a vehicle. Detailed Implementation

[0058] Embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. The embodiments include examples, modifications, etc. It should be noted that the devices, apparatuses, methods, etc., according to the present disclosure are not limited to the embodiments. In the following embodiments, substantially the same elements are denoted by the same reference numerals, and repeated descriptions will be omitted.

[0059] The following one or more embodiments can be implemented independently. On the other hand, at least a portion of each of the following embodiments can be suitably combined with at least a portion of another embodiment. The above embodiments may include novel features different from each other. Therefore, each embodiment may serve a different purpose or solve a different problem and may achieve different effects. Note that the effects in the embodiments are merely examples and not limitations, and other effects may be obtained.

[0060] This disclosure will be described in the following order.

[0061] 1. Example

[0062] 1-1. Display device configuration example

[0063] 1-2. Example of circuit configuration for light-emitting elements

[0064] 1-3. Examples of configuration of light-emitting element structures

[0065] 1-4. Examples of area settings in display devices

[0066] 1-5. Examples of display devices

[0067] 1-6. Example of a process for manufacturing a display device

[0068] 1-7. Examples of the planar shape of the stepped portion in the protective layer

[0069] 1-8. Functions and Effects

[0070] 2. Modify

[0071] 2-1. Example of resonator structure configuration

[0072] 2-2. Example of a shift structure configuration

[0073] 3. Other embodiments

[0074] 4. Application Examples

[0075] 5. Supplementary Explanation

[0076] 1. Example

[0077] 1-1. Display device configuration example

[0078] Reference Figure 1 A configuration example of display device 1 according to this embodiment is described. Figure 1 This is a diagram illustrating an example configuration of display device 1 according to this embodiment.

[0079] like Figure 1 As shown, the display device 1 includes a plurality of light-emitting elements 100, a horizontal driving circuit 11, and a vertical driving circuit 12. The light-emitting elements 100 are arranged, for example, in a matrix shape. The horizontal driving circuit 11 and the vertical driving circuit 12 are circuits for driving each light-emitting element 100. Figure 1 In the example shown, the horizontal driving circuit 11 and the vertical driving circuit 12 are each arranged on one end of the display device 1. However, their arrangement is not particularly restricted.

[0080] Display device 1 includes multiple scan lines SCL, multiple signal lines DTL, and multiple power supply lines (not shown). Each scan line SCL is used to scan the corresponding light-emitting element 100. Each signal line DTL is used to supply various types of voltages to the corresponding light-emitting element 100. Each power supply line is used to supply driving voltage to the corresponding light-emitting element 100.

[0081] The light-emitting elements 100 are arranged in a matrix shape of a total of M * N, for example, in the horizontal direction ( Figure 1 M in the X direction, and M in the vertical direction (in the X direction). Figure 1 There are N light-emitting elements 100 in the Y direction. Each light-emitting element 100 can be used as a pixel, or each light-emitting element 100 can be used as a sub-pixel, and a group of multiple sub-pixels can be used as a pixel.

[0082] It should be noted that, Figure 1 In the example shown, the light-emitting element 100 corresponding to red display (R: wavelength 620nm to 750nm) is indicated by reference numeral R, the light-emitting element 100 corresponding to green display (G: wavelength 495nm to 570nm) is indicated by reference numeral G, and the light-emitting element 100 corresponding to blue display (B: wavelength 450nm to 495nm) is indicated by reference numeral B. Display device 1 is a display device capable of displaying colors.

[0083] The display device 1 described above is an example of a light-emitting device. Examples of display devices include various types of monitors used in televisions, personal computers, virtual reality (VR), mixed reality (MR), augmented reality (AR), etc., electronic viewfinders (EVFs), small projectors, etc. In addition to display device 1, a light-emitting device can also be, for example, a lighting device.

[0084] 1-2. Example of circuit configuration for light-emitting elements

[0085] Reference Figure 2 An example of the circuit configuration for each light-emitting element 100 according to this embodiment is described. Figure 2 This is a diagram illustrating an example of the circuit configuration of the light-emitting element 100 according to this embodiment. Figure 2 The example illustrates the connection relationship for one of the light-emitting elements 100.

[0086] like Figure 2 As shown, the light-emitting element 100 includes a light-emitting portion 101 and a driving circuit 102. The light-emitting portion 101 is, for example, a current-driven light-emitting portion. The driving circuit 102 is a circuit that controls the light emission of the light-emitting portion 101. The driving circuit 102 includes, for example, a write transistor TR. W , drive transistor TR D and capacitor section C S .

[0087] Write transistor TR W It is a transistor used to write moving image signals. The driving transistor TR D It is a transistor that allows current to flow through the light-emitting part 101. The write transistor TR W and drive transistor TR D For example, it is formed by p-channel transistors.

[0088] Capacitor section C S Used to maintain the gate electrode relative to the drive transistor TR D The voltage at the source region (the so-called gate / source voltage). When the light-emitting element 100 emits light, it drives the transistor TR. D A source / drain region ( Figure 2 One side of the line connected to the power supply line PS1 is used as the source region, and another source / drain region is used as the drain region.

[0089] Capacitor section C S Connected to the driving transistor TR D One of the source / drain regions is associated with the driving transistor TR. D Between the gate electrodes. Driving transistor TR D Another source / drain region is connected to the anode electrode of the light-emitting part 101.

[0090] For example, the light-emitting portion 101 is formed of an organic electroluminescent element (organic EL element). The light-emitting portion 101 described above is, for example, a current-driven light-emitting portion having a light emission brightness that changes with the current value. For example, the light-emitting portion 101 has a known configuration and structure including an anode electrode, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode electrode, etc.

[0091] The other end of the light-emitting part 101 (specifically, the cathode electrode) is connected to the common power supply line PS2. A predetermined voltage V is supplied to the common power supply line PS2. Cat (For example, ground potential). The capacitance of the light-emitting part 101 is indicated by the reference numeral C. EL This indicates that the capacitor C of the light-emitting part 101 is... EL The size is small, so if a problem occurs when driving the light-emitting part 101, an auxiliary capacitor can be connected in parallel to the light-emitting part 101 as needed.

[0092] Write transistor TR W This includes the gate electrode connected to the scan line SCL, a source / drain region connected to the signal line (data line) DTL, and a region connected to the drive transistor TR. D The other source / drain region of the gate electrode. The signal voltage from the signal line DTL is written to the transistor TR. W The part C written to the capacitor S .

[0093] Power supply voltage V CC Power is applied to the drive transistor TR via the power supply line PS1 (not shown in the diagram). D A source / drain region. When the moving image signal voltage V from the signal line DTL... Sig via write transistor TR W The part C written to the capacitor S At that time, the capacitor part C S Maintain (V) CC - V Sig The voltage of the transistor TR is used as the driving voltage. DThe gate / source voltage. The drain current I is expressed by the following equation (1). ds Flow through the driving transistor TR D Furthermore, the light-emitting portion 101 emits light with a brightness consistent with the current value.

[0094] I ds = k * μ * ((V CC - V Sig ) - |V th |) 2 (1)

[0095] Where μ: effective mobility, L: channel length, W: channel width, V th Threshold voltage, C ox : (Relative permittivity of gate insulating layer) * (Permittivity in vacuum) / (Thickness of gate insulating layer), and k ≡ (1 / 2) * (W / L) * C ox .

[0096] 1-3. Examples of configuration of light-emitting element structures

[0097] Reference Figure 3 A configuration example of the structure of the light-emitting element 100 according to this embodiment is described. Figure 3 This is a diagram illustrating an example configuration of the structure of the light-emitting element 100 according to this embodiment. Figure 3 The example illustrates a cross-sectional view of the structure of the light-emitting element 100.

[0098] like Figure 3 As shown, the display device 1 includes a plurality of light-emitting elements 100. Each light-emitting element 100 includes a substrate 10, an anode layer 20, an organic layer 30, a cathode layer 40, a protective layer 50, a color filter layer 60, a filler layer 70, a sealing layer 80, and a transparent substrate 90.

[0099] Specifically, an anode layer 20, an organic layer 30, a cathode layer 40, a protective layer 50, a color filter layer 60, a filler layer 70, a sealing layer 80, and a transparent substrate 90 are sequentially stacked on a substrate 10 to form a display device 1.

[0100] The substrate 10 serves as a support for the light-emitting elements 100, etc. The substrate 10 includes, for example, a driving circuit 102 for each light-emitting element 100. The substrate 10 may include circuits and wiring other than the driving circuit 102 (e.g., a power supply circuit that supplies power to each light-emitting element 100 and a multilayer wiring layer including various types of wiring).

[0101] For example, substrate 10 includes a pixel region R1a and a non-pixel region R1b. Pixel region R1a is the region where the light-emitting element 100 is located. Pixel region R1a serves as a light-emitting region. Non-pixel region R1b is the region outside the pixels, excluding pixel region R1a. Non-pixel region R1b serves as a non-light-emitting region (the region outside the light-emitting region). Pixel region R1a and non-pixel region R1b will be described in detail later.

[0102] For example, glass substrates such as high strain point glass, sodium glass, borosilicate glass, magnesium olivine, lead glass, and quartz glass, semiconductor substrates such as monocrystalline silicon, amorphous silicon, and polycrystalline silicon, or resin substrates such as polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate can be used as substrate 10.

[0103] An anode layer 20 is provided on a substrate 10. The anode layer 20 includes a plurality of anode electrodes 21. Each anode electrode 21 is positioned on a surface of the substrate 10 corresponding to a light-emitting element 100. Figure 3 The anode electrode 21 is provided on the upper surface of the electrode. For example, the anode electrode 21 can be formed of a metallic material and used as a reflective layer for reflecting light. To improve light extraction efficiency, the anode electrode 21 is preferably formed of a metallic film with the highest possible reflectivity and a large work function. The anode layer 20 corresponds to the first electrode layer.

[0104] For example, a metal film containing at least one of only metallic elements and alloys of metallic elements, such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag), can be used as the anode electrode 21. Specific examples of alloys include aluminum (Al) alloys (such as AlNi alloys and AlCu alloys) and silver (Ag) alloys (such as MgAg alloys). The anode electrode 21 can be formed from a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO).

[0105] An organic layer 30 is provided on the anode layer 20 and the substrate 10. The organic layer 30 includes at least a light-emitting layer and is formed to emit, for example, white light. Figure 3In the example shown, organic layer 30 is depicted as a single layer. However, organic layer 30 is actually formed of multiple layers, including a light-emitting layer. For example, organic layer 30 may have a structure in which a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer are stacked starting from the anode layer 20 side.

[0106] A cathode layer 40 is provided on the organic layer 30 and the substrate 10 to cover the organic layer 30. The cathode layer 40 is formed of a material that is conductive and transparent to light emitted from the organic layer 30 (e.g., a transparent conductive material, a semi-transparent conductive material, etc.). The cathode layer 40 serves as a cathode electrode. The cathode layer 40 corresponds to the second electrode layer.

[0107] For example, a metal film containing at least one of only metallic elements and alloys of metallic elements, such as aluminum (Al), magnesium (Mg), calcium (Ca), sodium (Na), and silver (Ag), can be used as the cathode layer (cathode) 40. Specific examples of alloys include aluminum (Al) alloys (such as MgAg alloys and AlLi alloys), silver (Ag) alloys, etc. The cathode layer 40 can be formed from a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO).

[0108] Here, each light-emitting portion 101 is formed by sequentially stacking an organic layer 30 and a cathode layer 40 on the anode electrode 21. Light emitted by the organic layer 30 is emitted from the surface of the organic layer 30 on the cathode layer 40 side. Figure 3 In the example, the surface on the upper surface of the cathode layer 40 (or organic layer 30) that corresponds to the anode electrode 21 is the upper surface of the light-emitting portion 101, and the upper surface of the light-emitting portion 101 serves as the light-emitting surface from which the light-emitting portion 101 emits light. The planar shape of the light-emitting surface of the light-emitting element 100 substantially follows the planar shape of the anode electrode 21.

[0109] A protective layer 50 is provided on the cathode layer 40 and the substrate 10 to cover the cathode layer 40. The protective layer 50 serves as a membrane to protect the anode layer 20, the organic layer 30, and the cathode layer 40 from external contamination. For example, the protective layer 50 is formed of a material that is transmissive to light generated in the organic layer 30 (e.g., a transparent material).

[0110] For example, organic insulating films such as polyimide resin, acrylic resin, and phenolic resin, inorganic insulating films such as silicon nitride (SiN), silicon oxynitride (SiON), silicon oxide (SiO), and aluminum oxide (AlO), or stacked films of these various types of insulating films can be used as protective layer 50. Note that, unlike inorganic insulating films, organic insulating films are permeable to water, therefore, inorganic insulating films (inorganic insulating layers) are preferred as protective layer 50.

[0111] The thickness of the protective layer 50 differs between the pixel region R1a and the non-pixel region R1b. For example, the thickness of the protective layer 50 in the non-pixel region R1b can be greater than the thickness of the protective layer 50 in the pixel region R1a. This thickness is... Figure 3 The length in the stacking direction. Note that the thickness of the protective layer 50 in pixel region R1a is the thickness of the protective layer 50 of the light-emitting element 100, that is, the thickness of the protective layer 50 on the light-emitting portion 101. That is, the thickness of the protective layer 50 in non-pixel region R1b is greater than the thickness of the protective layer 50 on the light-emitting portion 101.

[0112] A color filter layer 60 is provided on the protective layer 50. The color filter layer 60 includes, for example, a color filter 60R for red display, a color filter 60G for green display, and a color filter 60B for blue display. That is, the display device 1 includes a light-emitting element 100 for red display, a light-emitting element 100 for green display, and a light-emitting element 100 for blue display.

[0113] A filler layer 70 is provided on the color filter layer 60. The filler layer 70 is provided between the color filter layer 60 and the transparent substrate 90. For example, the filler layer 70 is formed of a material (e.g., a transparent material) that is transmissive to light passing through the color filter layer 60. For example, a material similar to the material of the protective layer 50 can be used in the filler layer 70.

[0114] A sealing layer 80 is provided on the protective layer 50. The sealing layer 80 is a layer used to bond the transparent substrate 90 to the protective layer 50. For example, acrylic adhesives, epoxy adhesives, polyurethane-based adhesives, silicone-based adhesives, cyanoacrylate-based adhesives, thermosetting adhesives, UV-curable adhesives, etc., can be used as the sealing layer 80.

[0115] A transparent substrate 90 is provided on the filler layer 70 and the sealing layer 80. The transparent substrate 90 protects the interior of the display device 1 from external environmental influences and prevents substances such as moisture and oxygen from penetrating into the organic layer 30. For example, the transparent substrate 90 is formed of a material that is transmissive to light passing through the color filter layer 60 and has high gas barrier properties. As such a material, for example, a transparent material such as glass can be used.

[0116] Display device 1 may include a lens layer. For example, the lens layer is provided between color filter layer 60 and fill layer 70. However, there are no particular restrictions on the location of the lens layer. The lens layer includes multiple lenses. For example, a lens is provided for each light-emitting element 100. Each lens may have the same structure, and each lens may be hemispherical in shape. For example, microlenses (on-chip microlenses) may be used as lenses.

[0117] 1-4. Examples of area settings in display devices

[0118] Reference Figure 4 This describes an example of the setting of a region in display device 1 according to this embodiment. Figure 4 This is a diagram illustrating an example of the arrangement of areas in display device 1 according to this embodiment. Figure 4 The example illustrates a cross-sectional view and a plan view of a portion of the structure of the light-emitting element 100.

[0119] like Figure 4 As shown, the anode layer 20 has a layered region (pixel region R1a) and a non-layered region (non-pixel region R1b). Additionally, the organic layer 30 has a layered region R2a and a non-layered region R2b. The cathode layer 40 has a layered region R3a and a non-layered region R3b. The sealing layer 80 has a non-layered region (uncoated region) R4a and a layered region (coated region) R4b. The layered region R4b is located in the peripheral edge region of the protective layer 50. For example, the peripheral edge region is located on the surface of the protective layer 50 (…). Figure 4 The upper surface of the protective layer 50 has an annular region of predetermined width extending from the outer periphery of the protective layer 50.

[0120] For example, a layered region (pixel region R1a), each of layered regions R2a, R3a, and R4b, a non-layered region (non-pixel region R1b), and each of non-layered regions R2b, R3b, and R4a are provided relative to the substrate 10. These regions R1a to R4a and R1b to R4b are also, for example, also... Figure 4 It operates in the stacking direction. Layers can be referred to as membranes, and non-layered regions can be referred to as regions outside the layered regions.

[0121] exist Figure 4 In the example, the layered regions (pixel regions R1a) of the anode layer 20, the layered regions R2a of the organic layer 30, and the layered regions R3a of the cathode layer 40 are formed, for example, in a rectangular shape in the plan view. The layered regions (coating regions) R4b of the sealing layer 80 are formed, for example, in a rectangular ring shape in the plan view.

[0122] Among the layered regions (pixel region R1a) of the anode layer 20, the layered region R2a of the organic layer 30, and the layered region R3a of the cathode layer 40, the layered region (pixel region R1a) of the anode layer 20 has the smallest planar area, and the layered region R3a of the cathode layer 40 has the largest planar area (R1a < R2a < R3a).

[0123] 1-5. Examples of display devices

[0124] Reference Figures 5 to 14 Examples 1 to 8 describe the display device 1 according to this embodiment. Figures 5 to 14 These are diagrams used to describe examples (Examples 1 to 8) of the display device 1 according to this embodiment. Figures 5 to 14 The example illustrates a cross-sectional view of a portion of the structure of display device 1.

[0125] Example 1

[0126] like Figure 5 As shown, the thickness of the protective layer 50 differs between the pixel region R1a and the non-pixel region R1b. Specifically, the protective layer 50 includes a stepped portion 51 through which a layer thickness difference (difference in film thickness) is created. The stepped portion 51 includes a recessed portion 51a. The color filter layer 60 is provided on the bottom surface of the recessed portion 51a (the upper surface of the protective layer 50).

[0127] The boundary of the thickness difference of the protective layer 50 exists relative to the outer periphery of the anode layer 20. Figure 5 The protective layer 50 is located outside the right end of the anode layer 20, i.e., within the non-pixel region R1b. For example, the thickness of the protective layer 50 in the non-pixel region R1b is greater than the thickness of the protective layer 50 in the pixel region R1a. The thickness of a portion of the protective layer 50 in the non-pixel region R1b is at least greater than the thickness of the protective layer 50 in the pixel region R1a.

[0128] like Figure 6 As shown in the figure, reference numeral H1 represents the thickness (layer thickness) of the organic layer 30 and the cathode layer 40, reference numeral H2 represents the thickness (layer thickness) of the protective layer 50 in the pixel region R1a, and reference numeral H3 represents the thickness (layer thickness) of the protective layer 50 in the non-pixel region R1b. In this embodiment, at least the relational expression H3 > H2 (H2 ≠ H3) is satisfied. Furthermore, it is desirable that the relational expression H3 ≥ H1 + H2 is satisfied.

[0129] like Figure 7 As shown in the figure, reference numerals H1 to H3 are... Figure 6 Similar to the example below. In the comparative example, the relational expression H3 = H2 is satisfied. That is, the protective layer 50 follows the unevenness of the base (see...). Figure 7 And the thickness of the protective layer 50 (layer thickness) becomes constant (H3 = H2).

[0130] In the comparative example, the unevenness of the base (e.g., organic layer 30, cathode layer 40, etc.) before the formation of the protective layer 50 is tracked, and the protective layer 50 is formed on the base. The actual thickness of the formed protective layer 50 is constant; therefore, the thickness of the protective layer 50 in the pixel region R1a is the same as the thickness of the protective layer 50 in the non-pixel region R1b. However, due to the layer thickness distribution (film thickness distribution) caused by the process, a layer thickness difference of ±10% relative to the set layer thickness (film thickness) can occur. For example, a layer thickness distribution of ±100nm can appear relative to a layer thickness of 1µm.

[0131] For example, in Example 1, the layer thickness difference is equal to or greater than the layer thickness distribution mentioned above, and the thickness of the protective layer 50 in the non-pixel region R1b is greater than the thickness of the protective layer 50 in the pixel region R1a. Furthermore, the thickness of the protective layer 50 in the non-pixel region R1b is preferably equal to or greater than the layer thickness obtained as the sum of the thicknesses of the organic layer 30 and the cathode layer 40 and the thickness of the protective layer 50 in the pixel region R1a.

[0132] According to Example 1, the thickness difference of the protective layer 50 exists in the non-pixel region R1b, and the thickness of the protective layer 50 in the non-pixel region R1b is greater than the thickness of the protective layer 50 in the pixel region R1a. This makes it possible to increase the thickness of the protective layer 50 while reducing the interlayer distance between the organic layer 30 and the color filter layer 60. Therefore, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a and improve the reliability of the display device 1.

[0133] For example, even in the case of dents or foreign matter A1 transfer due to contact with the mask during the formation of the organic layer 30 or the cathode layer 40 (see... Figure 5 It is also possible to prevent moisture from penetrating from the outside through defects originating from dents or foreign matter A1. Therefore, it is possible to ensure reliability against defects. Dents or foreign matter A1 originate from contact with the mask, etc., therefore, dents or foreign matter A1 are likely to exist in the peripheral edge region of the organic layer 30, cathode layer 40, etc. (see...) Figure 5 ).

[0134] The boundary of the thickness difference of the protective layer 50 may exist relative to the outer periphery of the anode layer 20. Figure 5 The outer side of the protective layer 50 at the right end of the middle anode layer 20, and relative to the outer peripheral end of the organic layer 30 ( Figure 5 The inner side of the protective layer 50 (right end of the organic layer 30). The outer peripheral end of the organic layer 30 serves as the boundary between the layered region R2a and the non-layered region R2b of the organic layer 30.

[0135] Example 2

[0136] like Figure 8As shown, the boundary of the thickness difference of the protective layer 50 exists relative to the outer periphery of the organic layer 30. Figure 8 The protective layer 50 is located outside the right end of the organic layer 30, specifically within the non-layered region R2b of the organic layer 30. For example, the thickness of the protective layer 50 in the non-layered region R2b of the organic layer 30 is greater than the thickness of the protective layer 50 in the layered region R2a of the organic layer 30. A portion of the protective layer 50 in the non-layered region R2b of the organic layer 30 has a thickness at least greater than the thickness of the protective layer 50 within the pixel region R1a.

[0137] According to Example 2, the thickness difference of the protective layer 50 exists in the non-layered region R2b of the organic layer 30, and the thickness of the protective layer 50 in the non-layered region R2b of the organic layer 30 is greater than the thickness of the protective layer 50 in the layered region R2a of the organic layer 30. This makes it possible to increase the thickness of the protective layer 50 while reducing the interlayer distance between the organic layer 30 and the color filter layer 60. Therefore, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a and improve the reliability of the display device 1.

[0138] For example, even in the case of dents or foreign matter A1 being transferred due to contact with the mask during the formation of the cathode layer 40 (see... Figure 8 It is also possible to prevent moisture from seeping in from the outside through defects originating from dents or foreign objects A1. Therefore, it is possible to ensure reliability against defects.

[0139] The boundary of the thickness difference of the protective layer 50 may exist relative to the outer periphery of the organic layer 30. Figure 8 The outer side of the protective layer 50 at the right end of the organic layer 30, and the outer peripheral end relative to the cathode layer 40. Figure 8 The inner side of the protective layer 50 (at the right end of the middle cathode layer 40). The outer peripheral end of the cathode layer 40 is the boundary between the layered region R3a and the non-layered region R3b of the cathode layer 40.

[0140] Example 3

[0141] like Figure 9 As shown, the boundary of the thickness difference of the protective layer 50 exists relative to the outer periphery of the cathode layer 40. Figure 9 The protective layer 50 is located outside the right end of the cathode layer 40, specifically within the non-layered region R3b of the cathode layer 40. For example, the thickness of the protective layer 50 in the non-layered region R3b of the cathode layer 40 is greater than the thickness of the protective layer 50 in the layered region R3a of the cathode layer 40. A portion of the protective layer 50 in the non-layered region R3b of the cathode layer 40 has a thickness at least greater than the thickness of the protective layer 50 in the pixel region R1a.

[0142] According to Example 3, the boundary of the thickness difference of the protective layer 50 exists in the non-layered region R3b of the cathode layer 40, and the thickness of the protective layer 50 in the non-layered region R3b of the cathode layer 40 is greater than the thickness of the protective layer 50 in the layered region R3a of the cathode layer 40. This makes it possible to increase the penetration length of moisture A2 from the periphery of the display device 1 to the defect, thereby increasing the water distribution time. Furthermore, by increasing the contact area between the filling layer 70 and the protective layer 50, the adhesion of the interface between the filling layer 70 and the protective layer 50 is improved, thus increasing the water penetration time. Therefore, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a, thereby improving the reliability of the display device 1.

[0143] The boundary of the thickness difference of the protective layer 50 may exist relative to the outer periphery of the cathode layer 40. Figure 9 The outer side of the protective layer 50 at the right end of the middle cathode layer 40, and the outer side of the inner peripheral end of the sealing layer 80. Figure 9 The inner side of the protective layer 50 (left end of the middle sealing layer 80). The inner peripheral end of the sealing layer 80 serves as the boundary between the non-layered region R4a and the layered region R4b of the sealing layer 80.

[0144] Example 4

[0145] like Figure 10 As shown, the boundary of the thickness difference of the protective layer 50 exists relative to the inner circumferential end of the sealing layer 80. Figure 10 The protective layer 50 is located outside the left end of the sealing layer 80, specifically within the layered region R4b of the sealing layer 80. For example, the thickness of the protective layer 50 in the layered region R4b of the sealing layer 80 is greater than the thickness of the protective layer 50 in the non-layered region R4a of the sealing layer 80. The thickness of a portion of the protective layer 50 in the layered region R4b of the sealing layer 80 is at least greater than the thickness of the protective layer 50 in the pixel region R1a.

[0146] According to Example 4, the boundary of the thickness difference of the protective layer 50 exists in the layered region R4b of the sealing layer 80, and the thickness of the protective layer 50 in the layered region R4b of the sealing layer 80 is greater than the thickness of the protective layer 50 in the non-layered region R4a of the sealing layer 80. This makes it possible to increase the penetration length of moisture A2 from the periphery of the display device 1 to the defect, thereby increasing the time for moisture distribution. Furthermore, by increasing the contact area between the sealing layer 80 and the protective layer 50, the adhesion of the interface between the sealing layer 80 and the protective layer 50 is improved, thus increasing the penetration time of moisture. Therefore, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a, thereby improving the reliability of the display device 1.

[0147] Example 5

[0148] like Figure 11 As shown, the stepped portion 51 of the protective layer 50 includes an inclined surface 51b. The inclined surface 51b is formed in a ring shape, for example, in the plan view. That is, the stepped portion 51 is formed in a conical shape.

[0149] In Example 5, it is similar to Example 3 (see Example 3). Figure 9 The boundary of the thickness difference of the protective layer 50 exists in the non-layered region R3b of the cathode layer 40. For example, the thickness of the protective layer 50 in the non-layered region R3b of the cathode layer 40 is greater than the thickness of the protective layer 50 in the layered region R3a of the cathode layer 40.

[0150] According to Example 5, a similar effect to that in Example 3 can be obtained. Furthermore, by providing an inclined surface 51b in the stepped portion 51, it is easier to apply the material evenly when forming the color filter layer 60, thereby potentially suppressing coating irregularities during the formation of the color filter layer 60.

[0151] Example 6

[0152] like Figure 12 As shown, the stepped portion 51 of the protective layer 50 includes uneven portions 51c. The uneven portions 51c are formed, for example, by a plurality of recessed portions and a plurality of protruding portions. The recessed portions and protruding portions are repeatedly formed on the surface of the protective layer 50. Figure 12 On the upper surface of the image. For example, the recessed portion and the protruding portion are each formed in a rectangular ring shape in the plan view.

[0153] exist Figure 12 In the example, the depth of each recess and the height of each protrusion are constant, the width of each recess is constant, and the widths of the protrusions are different. However, the depth and width of each recess can be constant or different, and the height and width of each protrusion can be constant or different.

[0154] In Example 6, it is similar to Example 4 (see Example 4). Figure 10 The boundary of the thickness difference of the protective layer 50 exists in the delaminated region R4b of the sealing layer 80. For example, the thickness of the protective layer 50 in the delaminated region R4b of the sealing layer 80 is greater than the thickness of the protective layer 50 in the non-delaminated region R4a of the sealing layer 80.

[0155] According to Example 6, a similar effect to that in Example 4 can be obtained. According to Example 6, compared to Example 4, the penetration length and contact area are increased, thus achieving a significant effect.

[0156] Example 7

[0157] like Figure 13 As shown, similar to Example 4 (see Figure 10The boundary of the thickness difference of the protective layer 50 exists in the layered region R4b of the sealing layer 80. For example, the thickness of the protective layer 50 in the layered region R4b of the sealing layer 80 is less than the thickness of the protective layer 50 in the non-layered region R4a of the sealing layer 80. The thickness of a portion of the protective layer 50 in the layered region R4b of the sealing layer 80 is at least less than the thickness of the protective layer 50 in the pixel region R1a.

[0158] Based on Example 7, a similar effect to that in Example 4 can be achieved.

[0159] Example 8

[0160] like Figure 14 As shown, in Example 8, Example 5 is combined (see Example 5). Figure 11 Example 6 (see Example 6) Figure 12 ) and Example 7 (see Figure 13 That is, the stepped portion 51 of the protective layer 50 includes an inclined surface 51b and an uneven portion 51c. For example, the thickness of the protective layer 50 corresponding to the inclined surface 51b and the uneven portion 51c is greater than the thickness of the protective layer 50 in the pixel region R1a, and the thickness of a portion of the protective layer 50 in the layered region R4b of the sealing layer 80 is less than the thickness of the protective layer 50 in the pixel region R1a.

[0161] According to Example 8, similar effects to those in Examples 5, 6, and 7 can be obtained. According to Example 8, compared to Examples 5, 6, and 7, the penetration length and contact area are increased, thus achieving a significant effect.

[0162] 1-6. Example of a process for manufacturing a display device

[0163] Reference Figures 15 to 18 An example of a process for describing a method of manufacturing a display device 1 according to this embodiment. Figures 15 to 18 Each of these figures is a process example illustrating a method for manufacturing a display device 1 according to this embodiment. Figures 15 to 18 The example illustrates a cross-sectional view of a portion of the process of manufacturing display device 1.

[0164] like Figure 15 As shown, an anode layer 20, an organic layer 30, a cathode layer 40, and a protective layer 50 are sequentially stacked on a substrate 10. The anode layer 20 is positioned in the pixel region R1a and formed on the substrate 10. The protective layer 50 is stacked on the substrate 10 and the cathode layer 40 to cover the anode layer 20, the organic layer 30, and the cathode layer 40 on the substrate 10.

[0165] like Figure 16 As shown, a photolithographically patterned mask M1 is formed on the protective layer 50, and the protective layer 50 is etched. Therefore, as... Figure 17 As shown, a step portion 51 is formed in the protective layer 50. The boundary of the thickness difference of the protective layer 50 exists in the non-pixel region R1b, and the thickness of the protective layer 50 in the non-pixel region R1b is greater than the thickness of the protective layer 50 in the pixel region R1a.

[0166] The mask M1 is formed, for example, by applying a photoresist onto the protective layer 50 and patterning the photoresist by exposure. At this time, for example, etching is used to form patterns such as the location and shape of the step portion 51 of the protective layer 50 to be formed.

[0167] Subsequently, the color filter layer 60 is stacked on the protective layer 50 (on the bottom surface of the recessed portion 51a of the stepped portion 51), and the sealing layer 80 is stacked on the outer edge region of the protective layer 50 (see [link]). Figure 3 Subsequently, the filler layer 70 is stacked on the color filter layer 60 and the protective layer 50, and the transparent substrate 90 is stacked on the filler layer 70 and the sealing layer 80 (see [link]). Figure 3 ).

[0168] According to the manufacturing method described above, a stepped portion 51 is formed in the protective layer 50. Specifically, in the substrate 10 including pixel regions R1a and non-pixel regions R1b, a plurality of light-emitting portions 101 are provided in the pixel regions R1a on the substrate 10 through the stacking process described above. The protective layer 50 is provided over the pixel regions R1a and non-pixel regions R1b to cover each light-emitting portion 101 on the substrate 10, and a stepped portion 51 is provided on the protective layer 50. Due to the presence of the stepped portion 51, the thickness of the protective layer 50 is different between the pixel regions R1a and the non-pixel regions R1b.

[0169] exist Figures 15 to 17 In the example, protective layer 50 is formed of a single layer. However, as... Figure 18 As shown, the protective layer 50 can be formed from multiple layers 50a to 50f. For example, the multiple layers 50a to 50f have a stacked structure of inorganic layers. For example, SiN, SiO, AlO, etc. can be used as inorganic layers. Inorganic layers of the same type can be stacked, or inorganic layers of different types can be stacked.

[0170] For example, the protective layer 50 can be formed by chemical vapor deposition (CVD). For example, multiple layers 50a to 50f can be formed by CVD or atomic layer deposition (ALD), or by both CVD and ALD.

[0171] It should be noted that, as a method for manufacturing the display device 1 according to the above embodiment, methods, apparatus, and conditions for manufacturing general semiconductor devices can be used. That is, the display device 1 of this embodiment can be manufactured using existing methods for manufacturing semiconductor devices.

[0172] Besides CVD and ALD methods, physical vapor deposition (PVD) and other similar methods can also be used as manufacturing methods. Examples of PVD methods include vacuum deposition, electron beam (EB) deposition, various types of sputtering (such as magnetron sputtering, RF-DC coupled bias sputtering, electron cyclotron resonator (ECR) sputtering, directed-target sputtering, and high-frequency sputtering), ion plating, laser ablation, molecular beam epitaxy (MBE), and laser transfer. Examples of CVD methods include plasma CVD, thermal CVD, metal-organic (MO) CVD, and photoCVD. Furthermore, other methods, such as electroplating, electroless plating, various types of printing, and various types of coating, can be used. Examples of patterning methods include chemical etching such as shadow masking, laser transfer, and photolithography, as well as physical etching using ultraviolet light, lasers, etc.

[0173] 1-7. Examples of the planar shape of the stepped portion in the protective layer

[0174] Reference Figures 19 to 22 An example describing the shape of the planar shape of the stepped portion 51 of the protective layer 50 according to this embodiment. Figures 19 to 22 Each of these figures is an example diagram illustrating the planar shape of the stepped portion 51 of the protective layer 50 according to this embodiment. Figures 19 to 22 The example illustrates a plan view showing the planar shape of the stepped portion 51 of the protective layer 50.

[0175] like Figure 19 As shown, the planar shape (bottom surface shape) of the step portion 51 includes a rectangular shape B1 and a rectangular enclosure portion B2. Figure 19 In the example, rectangular shape B1 is located at the center of protective layer 50, and rectangular surrounding portion B2 is positioned in the plan view as surrounding the periphery of rectangular shape B1. A portion of rectangular shape B1 serves as recessed portion 51a, and a portion of rectangular surrounding portion B2 serves as a groove portion (recessed portion) 51d with an annular shape.

[0176] like Figure 20 As shown, the planar shape (bottom surface shape) of the step portion 51 is an elliptical shape B3. Figure 20 In the example, the elliptical shape B3 is located at the center of the protective layer 50 in the plan view. A portion of the elliptical shape B3 serves as the recessed portion 51a.

[0177] like Figure 21 As shown, the planar shape (bottom surface shape) of the step portion 51 includes a rectangular shape B1 and multiple elongated shapes B4. Figure 21 In the example, four elongated shapes B4 are provided. In the plan view, a rectangular shape B1 is located at the center of the protective layer 50, and each elongated shape B4 extends linearly outward from the center of the long or short side of the rectangular shape B1. A portion of the rectangular shape B1 serves as a recessed portion 51a, and an individual portion of each elongated shape B4 serves as a groove portion (recessed portion). An individual portion of each elongated shape B4 serves as an extension portion 52.

[0178] During the manufacturing process of display device 1, when the filler layer 70 is stacked on the color filter layer 60 and the protective layer 50, the material of the filler layer 70 is filled into the recessed portion 51a of the stepped portion 51 of the protective layer 50. At this time, unnecessary material of the filler layer 70 (excess material exceeding the specified amount) flows out from each extension portion 52. Therefore, it is easier to handle the specified amount, thereby simplifying the manufacturing process.

[0179] exist Figure 21 In the example, in the planar diagram, each elongated shape B4 extends linearly outward from the center of the long or short side of the rectangular shape B1. However, as... Figure 22 As shown in the diagram, in the plan view, each elongated shape B4 can extend linearly from one of the four corners of the rectangular shape B1 toward one of the four corners of the protective layer 50.

[0180] The planar shape of the step portion 51 is not limited to Figures 19 to 22 The shapes shown are, for example, square shapes, instead of rectangular shapes B1 and elliptical shapes B3. The planar shape of the enclosure B2 can be any shape other than a rectangle. The shape of the elongated shape B4 can be any shape other than a shape that includes straight lines (such as a rectangle). There is no particular limitation on the number of enclosures B2 and elongated shapes B4. There is also no particular limitation on the position of the elongated shapes B4.

[0181] 1-8. Functions and Effects

[0182] As described above, the display device 1, an example of a light-emitting device according to this embodiment, includes a substrate 10 having a pixel region R1a and a non-pixel region R1b, a plurality of light-emitting portions 101 provided in the pixel region R1a, a protective layer 50 provided over the pixel region R1a and the non-pixel region R1b to cover the light-emitting portions 101, and a color filter layer 60 provided on the protective layer 50. The thickness of the protective layer 50 is different between the pixel region R1a and the non-pixel region R1b (see [reference]). Figures 3 to 5(etc.). This makes it possible to increase the penetration length of moisture A2 from the outer periphery of the display device 1 to the pixel region R1a or to defects, and to increase the time for moisture distribution. Furthermore, by increasing the contact area between the protective layer 50 and the layers on the protective layer 50 (e.g., the filling layer 70 or the sealing layer 80), the adhesion of the interface between the protective layer 50 and the layers on the protective layer 50 is improved. Therefore, the penetration time of moisture can be increased. Therefore, it is possible to suppress the generation of non-light-emitting sites in the pixel region R1a, thereby improving the reliability of the display device 1.

[0183] Protective layer 50 can be an inorganic layer (see...) Figures 3 to 5 (etc.). Therefore, compared to providing an organic layer as a protective layer 50, it is possible to reliably prevent moisture from penetrating into the pixel region R1a, defects, etc. Therefore, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0184] The boundary of the thickness difference of protective layer 50 can exist in the non-pixel region R1b (see...). Figure 5 (etc.). This makes it possible to reliably prevent moisture from penetrating into the pixel region R1a, thereby making it possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0185] The thickness of the protective layer 50 in the non-pixel region R1b can be greater than the thickness of the protective layer 50 in the pixel region R1a (see [reference]). Figure 5 (etc.). This makes it possible to increase the thickness of the protective layer 50 in the non-pixel region R1b, thereby potentially reliably suppressing the generation of non-light-emitting positions in the pixel region R1a.

[0186] The plurality of light-emitting portions 101 include: an anode layer 20, which serves as an example of a first electrode layer and is provided in the pixel region R1a; an organic layer 30, which is provided on the anode layer 20 and on a non-pixel region R1b; and a cathode layer 40, which serves as an example of a second electrode layer and is provided on the organic layer 30 and on a non-pixel region R1b. The boundary of the layer thickness difference of the protective layer 50 may exist on the outer side of the protective layer 50 relative to the outer peripheral end of the organic layer 30 (see [link to relevant documentation]). Figure 8 Therefore, for example, the boundary of the thickness difference of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0187] Furthermore, the thickness of the protective layer 50 in the non-layered region R2b of the organic layer 30 can be greater than the thickness of the protective layer 50 in the layered region R2a of the organic layer 30 (see [link]). Figure 8 Therefore, for example, the thickness of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0188] The boundary of the thickness difference of the protective layer 50 can exist on the outer side of the protective layer 50 relative to the outer peripheral end of the organic layer 30, and on the inner side of the protective layer 50 relative to the outer peripheral end of the cathode layer 40 (see [link]). Figure 8 Therefore, for example, the boundary of the thickness difference of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0189] The boundary of the thickness difference of the protective layer 50 may exist on the outer side of the protective layer 50 relative to the outer peripheral end of the cathode layer 40 (see [link]). Figure 9 Therefore, for example, the boundary of the thickness difference of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0190] The thickness of the protective layer 50 in the non-layered region R3b of the cathode layer 40 can be greater than the thickness of the protective layer 50 in the layered region R3a of the cathode layer 40 (see [reference]). Figure 9 Therefore, for example, the thickness of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0191] The display device 1 may also include a sealing layer 80 provided in the peripheral edge region of the protective layer 50, and the boundary of the thickness difference of the protective layer 50 may exist on the outer side of the protective layer 50 relative to the outer peripheral end of the cathode layer 40, and on the inner side of the protective layer 50 relative to the inner peripheral end of the sealing layer 80 (see...). Figure 9 Therefore, for example, the boundary of the thickness difference of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0192] The display device 1 may also include a sealing layer 80 provided in the peripheral edge region of the protective layer 50, and the boundary of the thickness difference of the protective layer 50 may exist on the outer side of the protective layer 50 relative to the inner peripheral end of the sealing layer 80 (see...). Figure 10 Therefore, for example, the boundary of the thickness difference of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0193] The thickness of the protective layer 50 in the layered region R4b of the sealing layer 80 can be greater than the thickness of the protective layer 50 in the non-layered region R4a of the sealing layer 80 (see [reference]). Figure 10Therefore, for example, the thickness of the protective layer 50 can be appropriately set according to the location where defects are likely to occur, the size of the defects, etc. Thus, it is possible to reliably suppress the generation of non-light-emitting positions in the pixel region R1a.

[0194] The thickness of the protective layer 50 in the non-pixel region R1b can be less than the thickness of the protective layer 50 in the pixel region R1a (see [reference]). Figure 13 Therefore, as described above, it is at least possible to increase the penetration length of moisture A2 from the periphery of the display device 1 to the pixel region R1a or defects, increase the water distribution time, and further improve the adhesion of the interface between the protective layer 50 and the layers on the protective layer 50. Therefore, it is possible to increase the water penetration time. Therefore, it is possible to suppress the generation of non-light-emitting positions in the pixel region R1a, thereby improving the reliability of the display device 1.

[0195] Protective layer 50 may include a stepped portion 51 through which a layer thickness difference is generated (see [reference]). Figure 5 (etc.). This makes it possible to reliably prevent moisture from penetrating into pixel region R1a, defects, etc., thereby potentially suppressing the generation of non-light-emitting positions in pixel region R1a and improving the reliability of display device 1 (see...). Figure 5 wait).

[0196] Step portion 51 may include inclined surface 51b (see Figure 11 Therefore, the stepped portion 51 can be reliably formed.

[0197] Step portion 51 may include concave and convex portions 51c (see...) Figure 12 Therefore, the stepped portion 51 can be reliably formed.

[0198] Step portion 51 may include recessed portion 51a (see Figure 5 , Figures 19 to 22 (etc.). Therefore, the stepped portion 51 can be reliably formed.

[0199] Step portion 51 may include an extension portion 52, which is a recessed portion connected to the aforementioned recessed portion 51a (see...). Figure 21 and Figure 22 Accordingly, during the manufacturing process of the display device 1, when the material of the filling layer 70 is filled into the recessed portion 51a of the stepped portion 51 of the protective layer 50, unnecessary material of the filling layer 70 (excess material exceeding the specified amount) flows out from each extension portion 52. Therefore, it is easier to handle the specified amount, etc., thereby simplifying the manufacturing process, for example.

[0200] 2. Modify

[0201] 2-1. Example of resonator structure configuration

[0202] In the display device 1 according to this embodiment, the pixels used as light-emitting elements 100 may have a resonator structure that causes the light generated in the light-emitting portion 101 to resonate. The resonator structure applied to each embodiment will now be described with reference to the accompanying drawings. Note that, if necessary, the reference numerals can be distinguished by adding one of RGB (this applies to the drawings).

[0203] Resonator Structure: First Example

[0204] Figure 23 This is a schematic cross-sectional view used to describe a first example of a resonator structure.

[0205] In the first example, the first electrode 501 is formed in each light-emitting element 500 with a common film thickness. The second electrode 502 is formed similarly. For example, the light-emitting element 500 corresponds to the light-emitting element 100 described above, the first electrode 501 corresponds to the anode electrode 21 described above, and the second electrode 502 corresponds to the cathode layer 40, which serves as the cathode electrode described above. This is similar in other examples.

[0206] A reflector plate 504 is disposed below the first electrode 501 of the light-emitting element 500, with an optical adjustment layer 503 in between. A resonator structure is formed between the reflector plate 504 and the second electrode 502, which causes the light generated by the organic layer 505 to resonate. For example, the organic layer 505 corresponds to the organic layer 30 described above.

[0207] The reflector plate 504 is formed in each light-emitting element 500 with a common film thickness. The film thickness of the optical adjustment layer 503 varies depending on the color to be displayed by the pixel. By providing optical adjustment layers 503R, 503G, and 503B, each with a different film thickness, it is possible to set an optical distance that causes optimal resonance at the light wavelength corresponding to the color to be displayed.

[0208] exist Figure 23 In the example shown, the upper surfaces of the reflector plates 504 in the light-emitting elements 500R, 500G, and 500B are arranged to be aligned. As described above, the film thickness of the optical adjustment layer 503 varies depending on the color to be displayed by the pixel. Therefore, the position of the upper surface of the second electrode 502 varies depending on the type of light-emitting element 500 (light-emitting elements 500R, 500G, and 500B).

[0209] For example, reflector plate 504 can be formed by using metals such as aluminum (Al), silver (Ag) and copper (Cu) or alloys with these metals as the main components.

[0210] The optical adjustment layer 503 can be formed using inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), or organic resin materials such as acrylic resin and polyimide resin. The optical adjustment layer 503 can be a single layer or a stacked film comprising multiple of the materials mentioned above. The number of stacked layers can vary depending on the type of each light-emitting element 500.

[0211] The first electrode 501 can be formed by using transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO).

[0212] The second electrode 502 is required to be used as a semi-transparent and semi-reflective membrane. The second electrode 502 can be formed by using magnesium (Mg), silver (Ag), magnesium-silver alloy (MgAg) with magnesium and silver as the main components, alloys containing alkali metals or alkaline earth metals, etc.

[0213] Resonator Structure: Second Example

[0214] Figure 24 This is a schematic cross-sectional view used to describe a second example of a resonator structure.

[0215] In the second example, the first electrode 501 and the second electrode 502 are formed in each light-emitting element 500 with a common film thickness.

[0216] In the second example, a reflector plate 504 is disposed below the first electrode 501 of each light-emitting element 500, with an optical adjustment layer 503 interposed therebetween. A resonator structure is formed between the reflector plate 504 and the second electrode 502, such that the light generated by the organic layer 505 resonates. Similar to the first example, the reflector plate 504 is formed with a common film thickness in each light-emitting element 500, and the film thickness of the optical adjustment layer 503 varies according to the color to be displayed by the pixel.

[0217] exist Figure 23 In the first example shown, the upper surfaces of the reflector plates 504 in the light-emitting elements 500R, 500G and 500B are arranged to be aligned, and the position of the upper surface of the second electrode 502 varies depending on the type of light-emitting element 500.

[0218] In contrast, Figure 24 In the second example shown, in the light-emitting elements 500R, 500G, and 500B, the upper surface of the second electrode 502 is arranged to be aligned. To achieve this alignment, the upper surface of the reflector plate 504 in the light-emitting elements 500R, 500G, and 500B is arranged differently depending on the type of light-emitting element 500. Therefore, the lower surface of the reflector plate 504 (in other words, Figure 24The upper surface of the base 506 shown has a stepped shape according to the type of the light-emitting element 500.

[0219] The materials constituting the reflector plate 504, optical adjustment layer 503, first electrode 501 and second electrode 502 are similar to those described in the first example, so their description is omitted.

[0220] Resonator Structure: Third Example

[0221] Figure 25 This is a schematic cross-sectional view used to describe a third example of a resonator structure.

[0222] In the third example, each first electrode 501 and each second electrode 502 are formed in each light-emitting element 500 with a common film thickness.

[0223] In the third example, a reflector plate 504 is also disposed below the first electrode 501 of each light-emitting element 500, with an optical adjustment layer 503 interposed therebetween. A resonator structure is formed between the reflector plate 504 and the second electrode 502, causing the light generated by the organic layer 505 to resonate. Similar to the first and second examples, the film thickness of the optical adjustment layer 503 varies according to the color to be displayed by the pixel. Similar to the second example, in light-emitting elements 500R, 500G, and 500B, the upper surface of the second electrode 502 is positioned in alignment.

[0224] exist Figure 24 In the second example shown, in order to align the upper surface of the second electrode 502, the lower surface of the reflector plate 504 has a stepped shape according to the type of each light-emitting element 500.

[0225] In contrast, Figure 25 In the third example shown, the film thickness of the reflector plate 504 is set to vary depending on the type of the light-emitting element 500. More specifically, the film thickness is set such that the lower surfaces of reflector plates 504R, 504G, and 504B are aligned.

[0226] The materials constituting the reflector plate 504, optical adjustment layer 503, first electrode 501 and second electrode 502 are similar to those described in the first example, so their description is omitted.

[0227] Resonator Structure: Fourth Example

[0228] Figure 26 This is a schematic cross-sectional view used to describe the fourth example of a resonator structure.

[0229] exist Figure 23In the first example shown, each first electrode 501 and each second electrode 502 of each light-emitting element 500 are formed with a common film thickness. A reflector plate 504 is disposed below the first electrode 501 of each light-emitting element 500, with an optical adjustment layer 503 in between.

[0230] In contrast, Figure 26 In the fourth example shown, the optical adjustment layer 503 is omitted, and the film thickness of the first electrode 501 is set to vary depending on the type of light-emitting element 500.

[0231] The reflector plate 504 is formed with a common film thickness in each light-emitting element 500. The film thickness of the first electrode 501 varies depending on the color to be displayed by the pixel. By providing first electrodes 501R, 501G, and 501B, each with a different film thickness, it is possible to set an optical distance that causes optimal resonance at the light wavelength corresponding to the color to be displayed.

[0232] The materials constituting the reflector plate 504, optical adjustment layer 503, first electrode 501 and second electrode 502 are similar to those described in the first example, so their description is omitted.

[0233] Resonator Structure: Fifth Example

[0234] Figure 27 This is a schematic cross-sectional view used to describe the fifth example of a resonator structure.

[0235] exist Figure 23 In the first example shown, each first electrode 501 and each second electrode 502 are formed in each light-emitting element 500 with a common film thickness. A reflector plate 504 is disposed below the first electrode 501 of each light-emitting element 500, with an optical adjustment layer 503 in between.

[0236] In contrast, Figure 27 In the fifth example shown, the optical adjustment layer 503 is omitted, and instead, an oxide film 507 is formed on the surface of the reflector plate 504. The thickness of the oxide film 507 is set to vary depending on the type of light-emitting element 500.

[0237] The thickness of the oxide film 507 varies depending on the color to be displayed by the pixel. By providing oxide films 507R, 507G, and 507B, each with different thicknesses, it is possible to set an optical distance that causes optimal resonance at the light wavelength corresponding to the color to be displayed.

[0238] The oxide film 507 is a film obtained by oxidizing the surface of the reflector plate 504, and is formed, for example, by aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 507 serves as an insulating film for adjusting the length (optical distance) of the optical path between the reflector plate 504 and the second electrode 502.

[0239] Depending on the type of light-emitting element 500, an oxide film 507 with different film thicknesses can be formed, for example, as described below.

[0240] First, the container is filled with electrolyte, and the substrate on which the reflector plate 504 is formed is immersed in the electrolyte. Electrodes are arranged to face the reflector plate 504.

[0241] Subsequently, a positive voltage is applied to the reflector plate 504 with reference to the electrode, causing the reflector plate 504 to undergo anodic oxidation. The thickness of the oxide film 507 formed by anodic oxidation is proportional to the voltage applied to the electrode. Therefore, anodic oxidation is performed while applying a voltage of the type corresponding to the light-emitting element 500 to each of the reflector plates 504R, 504G, and 504B. Thus, oxide films 507 with different thicknesses can be formed in a single process.

[0242] The materials constituting the reflector plate 504, the first electrode 501, and the second electrode 502 are similar to those described in the first example, so their description is omitted.

[0243] Resonator Structure: Example 6

[0244] Figure 28 This is a schematic cross-sectional view used to describe the sixth example of a resonator structure.

[0245] In the sixth example, the light-emitting element 500 is formed by stacking a first electrode 501, an organic layer 505, and a second electrode 502. However, in the sixth example, the first electrode 501 is formed to serve as both an electrode and a reflector plate. The first electrode (also serving as a reflector plate) 501 is formed of a material having optical constants selected according to the type of the light-emitting element 500. When the phase shift depends on the first electrode (also serving as a reflector plate) 501 and not simultaneously, it is possible to set an optical distance that causes optimal resonance at the light wavelength corresponding to the color to be displayed.

[0246] The first electrode (also used as a reflector plate) 501 can be formed from metallic elements such as aluminum (Al), silver (Ag), gold (Au), and copper (Cu), or alloys with any of these metals as the main component. For example, the first electrode (also used as a reflector plate) 501R of the light-emitting element 500R can be formed from copper (Cu), while the first electrode (also used as a reflector plate) 501G of the light-emitting element 500G and the first electrode (also used as a reflector plate) 501B of the light-emitting element 500B can be formed from aluminum.

[0247] The materials constituting the second electrode 502 are similar to those described in the first example, so their description is omitted.

[0248] Resonator Structure: Example 7

[0249] Figure 29 This is a schematic cross-sectional view used to describe the seventh example of a resonator structure.

[0250] The seventh example is essentially a configuration in which the sixth example is applied to light-emitting elements 500R and 500G, and the first example is applied to light-emitting element 500B. In the configurations mentioned above, it is also possible to set an optical distance that induces optimal resonance at the light wavelength corresponding to the color to be displayed.

[0251] The first electrode (also used as a reflector plate) 501R and 501G used in the light-emitting elements 500R and 500G can be formed from metallic elements such as aluminum (Al), silver (Ag), gold (Au) and copper (Cu) or alloys with any of these metals as the main component.

[0252] The materials used in the light-emitting element 500B to form the reflector plate 504B, optical adjustment layer 503B, and first electrode 501B are similar to those described in the first example, and therefore their description is omitted.

[0253] 2-2. Example of a shift structure configuration

[0254] The pixels used as light-emitting elements 100 in the display device 1 according to this embodiment can have a configuration including a shifting structure that shifts any one of the light-emitting portion (e.g., light-emitting portion 101), the lens member, and the wavelength selection portion (e.g., color filter layer 60). Reference will now be made to... Figures 30 to 36 Describe the relationship between the normal LN passing through the center of the light-emitting part, the normal LN' passing through the center of the lens component, and the normal LN'' passing through the center of the wavelength selection part. Figures 30 to 36 These are conceptual diagrams used to describe the first through seventh examples of shift structures.

[0255] The size of the wavelength-selective portion can be appropriately changed according to the light emitted by the light-emitting element 100. If a light-absorbing layer (black matrix layer) is provided between the wavelength-selective portions of adjacent light-emitting elements 100, then the size of the light-absorbing layer can be appropriately changed according to the light emitted by the light-emitting element 100. The size of the wavelength-selective portion can be appropriately changed according to the distance (offset) d0 between the normal LN passing through the center of the light-emitting portion and the normal LN'' passing through the center of the wavelength-selective portion. The planar shape of the wavelength-selective portion can be the same as, similar to, or different from the planar shape of the lens component.

[0256] Shift Structure: First Example

[0257] like Figure 30 As shown, the normal LN passing through the center of the light-emitting part, the normal LN'' passing through the center of the wavelength-selective part, and the normal LN' passing through the center of the lens member coincide with each other. That is, they satisfy D0 = d0 = 0.

[0258] Shift Structure: Second Example

[0259] like Figure 31 As shown, the normal LN passing through the center of the light-emitting portion coincides with the normal LN'' passing through the center of the wavelength-selective portion. However, the normal LN passing through the center of the light-emitting portion and the normal LN'' passing through the center of the wavelength-selective portion do not coincide with the normal LN' passing through the center of the lens member. That is, D0 ≠ d0 = 0.

[0260] Shift Structure: Third Example

[0261] like Figure 32 As shown, the normal LN passing through the center of the light-emitting portion does not coincide with the normal LN'' passing through the center of the wavelength-selective portion and the normal LN' passing through the center of the lens member. The normal LN'' passing through the center of the wavelength-selective portion coincides with the normal LN' passing through the center of the lens member. That is, D0 = d0 > 0 is satisfied.

[0262] Shift Structure: Fourth Example

[0263] like Figure 33 As shown, the normal LN passing through the center of the light-emitting portion, the normal LN'' passing through the center of the wavelength-selective portion, and the normal LN' passing through the center of the lens member do not coincide with each other. That is, it is possible to select one aspect in which the normal LN' passing through the center of the lens member does not coincide with the normal LN passing through the center of the light-emitting portion and the normal LN'' passing through the center of the wavelength-selective portion. Here, it is preferred that the center of the wavelength-selective portion (in...) Figure 33 (Indicated by a black square) is positioned at the center of the connection between the light-emitting part and the center of the lens component (in Figure 33On the straight line LL (indicated by the black circle in the middle). Specifically, it satisfies the following relationship:

[0264] D0> d0> 0

[0265] Among these, taking into account variations during manufacturing, it is preferable to satisfy the following:

[0266] d0: D0 = LL1: (LL1 + LL2),

[0267] Where LL1 is the distance from the center of the light-emitting part to the center of the wavelength-selective part in the thickness direction, and LL2 is the distance from the center of the wavelength-selective part to the center of the lens component in the thickness direction.

[0268] Shift Structure: Fifth Example

[0269] like Figure 34 As shown, the normal LN passing through the center of the light-emitting part, the normal LN'' passing through the center of the wavelength-selective part, and the normal LN' passing through the center of the lens member coincide with each other. That is, they satisfy D0 = d0 = 0.

[0270] Shift Structure: Example 6

[0271] like Figure 35 As shown, the normal LN passing through the center of the light-emitting portion does not coincide with the normal LN'' passing through the center of the wavelength-selective portion and the normal LN' passing through the center of the lens member. The normal LN'' passing through the center of the wavelength-selective portion coincides with the normal LN' passing through the center of the lens member. That is, D0 = d0 > 0 is satisfied.

[0272] Shift Structures: Example 7

[0273] like Figure 36 As shown, the normal LN passing through the center of the light-emitting portion, the normal LN'' passing through the center of the wavelength-selective portion, and the normal LN' passing through the center of the lens member do not coincide with each other. That is, it is possible to select one aspect in which the normal LN' passing through the center of the lens member does not coincide with the normal LN passing through the center of the light-emitting portion and the normal LN'' passing through the center of the wavelength-selective portion. Here, it is preferable that the center of the wavelength-selective portion is located on the straight line LL connecting the center of the light-emitting portion and the center of the lens member. Specifically, the following relationship is satisfied:

[0274] d0 > D0 > 0

[0275] Among these, taking into account variations during manufacturing, it is preferable to satisfy the following:

[0276] D0: d0 = LL2: (LL1 + LL2),

[0277] Where LL1 is the distance in the thickness direction from the center of the light-emitting part to the center of the wavelength-selective part (in Figure 36 (Indicated by a black square) and LL2 is the distance in the thickness direction from the center of the wavelength selection section to the center of the lens component (in... Figure 36 (Indicated by a black circle).

[0278] 3. Other embodiments

[0279] The configurations according to the above embodiments (including examples and modifications) can be implemented in various ways beyond the examples described above. For example, each configuration is not limited to the examples described above and can be implemented in various ways. Furthermore, unless otherwise stated, the configurations, processing procedures, specific names, information fragments including various types of data and parameters described in the above documents and illustrated in the accompanying drawings can be freely changed. The configurations according to the above embodiments (including examples and modifications) can be appropriately combined. The effects in the above embodiments are merely illustrative and not limiting, and may provide other effects.

[0280] For example, a color filter may include a coloring material and / or microparticles constituting quantum dots. The color filter can be formed using a known resist material to which the desired coloring material is added. Known pigments or dyes can be used as the coloring material. There are no particular limitations on the microparticles constituting the quantum dots. For example, light-emitting semiconductor nanoparticles can be used as microparticles. A color filter containing coloring material transmits light within a target wavelength range from the light-emitting element 100, thereby displaying color. A color filter including microparticles constituting quantum dots converts the wavelength of light from the light-emitting element 100 to display color.

[0281] As a color filter array (color pattern), in addition to RGB primary color filters, various types of patterns such as Bayer arrays (e.g., RGBG, GRGB, RGGB, etc.), RGB arrays, RGB stripe arrays, RGB mosaic arrays, etc., can also be used, as well as color filters that can use various types of complementary colors. There are no particular restrictions on the stacking position of each color filter (e.g., color filter layer 60), as long as the color filters are arranged in the light path of the light emitted from the light-emitting part 101.

[0282] As the material constituting the light-emitting element 100, a suitable material is appropriately selected from transparent organic materials and inorganic materials. For example, the light-emitting element 100 is obtained by forming a photoresist on a transparent material layer and etching the formed photoresist.

[0283] In addition to organic electroluminescent elements, LED elements, semiconductor laser elements, etc., can also be used as the light-emitting part 101. The elements mentioned above are formed using known materials and methods. For forming a flat display device, it is preferable to use a configuration that includes an organic electroluminescent element as the light-emitting part 101.

[0284] As described above, the light-emitting element 100 may be configured to include a resonator structure that causes the light to resonate. Since the light-emitting element 100 includes a resonator structure, the light emission color of the light-emitting element 100 can be set to a predetermined display color, thus essentially eliminating the need for a color filter. However, to further improve the color purity of light with longer wavelengths, as described above, the display device 1 may also include a color filter corresponding to the light-emitting element 100 for red display. Alternatively, to improve the color purity of all display colors, the display device 1 may also include color filters corresponding to the light-emitting element 100 for red display, the light-emitting element 100 for green display, and the light-emitting element 100 for blue display.

[0285] Semiconductor materials, glass materials, plastic materials, etc., can be used as the constituent materials of the substrate 10. If the driving circuit 102 is formed by a transistor formed on a semiconductor substrate, a well region is provided in the semiconductor substrate made of silicon, and the transistor can be formed in the well, for example. On the other hand, if the driving circuit 102 is formed by a thin-film transistor or the like, the driving circuit 102 can be formed by using a substrate made of glass or plastic material and forming a semiconductor thin film on the substrate. Known configurations and structures can be used in various types of wiring.

[0286] In display device 1, the configuration of the driving circuit 102 that controls the light emission of the light-emitting element 100 is not particularly limited. The configuration of the transistors constituting the driving circuit 102 is also not particularly limited. For example, the transistors can be p-channel field-effect transistors or n-channel field-effect transistors.

[0287] In the display device 1, the light-emitting element 100 has a so-called top-emitting type configuration. For example, in the light-emitting element 100 formed of an organic electroluminescent element, an organic layer including a hole transport layer, a light-emitting layer, an electron transport layer, etc., is sandwiched between a first electrode and a second electrode. If a common cathode is used, then the first electrode is used as the anode electrode, and the second electrode is used as the cathode electrode. The first electrode is provided on the substrate 10 for each light-emitting element 100.

[0288] For example, the first electrode can be formed from metals or alloys with high work functions, such as platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), and tantalum (Ta). The first electrode can be formed as a stacked electrode, in which transparent conductive materials such as indium zinc oxide (IZO) and indium tin oxide (ITO) are stacked on a dielectric multilayer film or a thin film with high light reflectivity (such as aluminum).

[0289] For example, the second electrode can be formed from metals or alloys with low work functions, such as aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), and strontium (Sr), as well as alloys of alkali metals and silver, alkaline earth metals and silver, magnesium and calcium, and aluminum and lithium. The second electrode can be formed from transparent conductive materials such as indium zinc oxide (IZO) and indium tin oxide (ITO), or it can be formed as a stacked electrode comprising a layer formed of the aforementioned materials with low work functions and a layer formed of transparent conductive materials such as indium zinc oxide (IZO) and indium tin oxide (ITO).

[0290] The organic layer 30 is formed by stacking multiple layers of materials and is provided as a common continuous film on the entire surface including the first electrode. When a voltage is applied between the first electrode and the second electrode, the organic layer 30 emits light. For example, the organic layer 30 has a structure in which a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are stacked sequentially from the first electrode side. There are no limitations on the hole transport material, hole transport material, electron transport material, and organic light-emitting material constituting the organic layer 30, and known materials can be used.

[0291] The organic layer 30 may include a structure in which multiple light-emitting layers are stacked. For example, by stacking light-emitting layers that emit red, blue, and green light, or by stacking light-emitting layers that emit blue and yellow light, it is possible to form a white light-emitting element 100. The white light-emitting element 100 may be formed for each anode electrode, for example, and may be provided as an isolated light-emitting element. The cathode layer 40 may be provided as a cathode electrode for each light-emitting element 100, rather than being shared by the light-emitting elements 100. Furthermore, a structure in which a light-emitting layer is individually coated on each light-emitting element 100 according to the color to be displayed may be adopted.

[0292] Each pixel can be configured by one or more light-emitting elements 100. For example, a pixel can include multiple sub-pixels. Specifically, a pixel can have a configuration including three types of sub-pixels: red display sub-pixels, green display sub-pixels, and blue display sub-pixels. Furthermore, a pixel can use a set obtained by further adding one or more types of sub-pixels to these three types (e.g., a set by adding sub-pixels emitting white light to improve brightness, a set by adding sub-pixels emitting complementary colors to expand the color reproduction range, a set by adding sub-pixels emitting yellow light to expand the color reproduction range, and a set by adding sub-pixels emitting both yellow and cyan light to expand the color reproduction range).

[0293] Furthermore, there may be partition wall portions separating adjacent light-emitting elements 100, and these partition wall portions can be formed using materials appropriately selected from known inorganic and organic materials. For example, the partition wall portions can be formed by a combination of known film-forming methods (such as physical vapor deposition (PVD) with vacuum deposition and sputtering as examples, and various types of chemical vapor deposition (CVD)) and known patterning methods (such as etching and stripping).

[0294] In addition to VGA (640, 480), S-VGA (800, 600), XGA (1024, 768), APRC (1152, 900), S-XGA (1280, 1024), U-XGA (1600, 1200), HD-TV (1920, 1080), and Q-XGA (2048, 1536), examples of pixel values ​​for display device 1 also include several image display resolution values, such as (1920, 1035), (720, 480), and (1280, 960). However, the values ​​are not limited to these.

[0295] 4. Application Examples

[0296] The display device 1 according to this embodiment can be used as a display unit in any field of electronic devices, displaying moving image signals input to the electronic device or moving image signals generated in the electronic device as images or moving images. For example, the display device 1 according to this embodiment can be used as a display unit for portable terminal devices such as smartphones and mobile phones, digital still cameras, head-mounted displays (head-mounted displays), see-through head-mounted displays, television equipment, laptop-type personal computers, cameras, e-books, and game consoles.

[0297] Note that the display device 1 according to this embodiment may include a modular display device with a sealed configuration. The display module may include circuit portions for inputting signals from the outside to the light-emitting area and outputting signals from the light-emitting area, flexible printed circuits (FPCs), etc.

[0298] The following describes a smartphone 600, a digital still camera 650, a head-mounted display 700, a see-through head-mounted display 750, a television device 800, and a vehicle 900 as specific examples (application examples) of electronic devices using the display device 1 according to this embodiment. However, the specific examples described are merely examples, and the embodiments are not limited thereto.

[0299] Specific Example 1

[0300] Figure 37 This is an example diagram illustrating the appearance of a smartphone 600. (See image below.) Figure 37 As shown, the smartphone 600 includes a display unit 601 that displays various types of information, and an operation unit 602 that includes buttons for receiving user input. The display unit 601 is configured with the display device 1 according to the above embodiment.

[0301] Specific Example 2

[0302] Figure 38 and Figure 39 These are examples of the appearance of the digital still camera 650, each illustrating its own features. Figure 38 This is a front view of the digital still camera 650. Figure 39 This is a rear view of the digital still camera 650. (Example) Figure 38 and Figure 39 As shown, the digital still camera 650 is, for example, a single-lens reflex camera with an interchangeable lens, and includes an interchangeable imaging lens unit (interchangeable lens) 652 at substantially the center of the front surface of the camera body (camera body) 651, and a grip portion 653 for the photographer to hold on the left side of the front surface.

[0303] Monitor 654 is provided at a position shifted to the left from the center of the rear surface of camera body 651. Electronic viewfinder (eyepiece window) 655 is provided above monitor 654. By looking at electronic viewfinder 655, the photographer can visually identify the optical image of the object to be imaged, introduced by imaging lens unit 652, and determine the composition. Either monitor 654 or electronic viewfinder 655 is constituted by display device 1 according to the above embodiment.

[0304] Specific Example 3

[0305] Figure 40 This is an example diagram illustrating the appearance of a head-mounted display 700. (See diagram for example.) Figure 40As shown, the head-mounted display 700 includes ear hook portions 702 on both sides of the eyeglass-shaped display section 701 for attaching the head-mounted display 700 to the user's head, for example. The display section 701 is composed of the display device 1 according to the above embodiment.

[0306] Specific Example 4

[0307] Figure 41 This is an example illustration of the appearance of a perspective head-mounted display 750. (See image.) Figure 41 As shown, the see-through head-mounted display 750 includes a main body portion 751, an arm 752, and a lens barrel 753. The main body portion 751 is connected to the arm 752 and the eyeglasses 754. Specifically, the end of the main body portion 751 in the long side direction is bonded to the arm 752, and one side of the side surface of the main body portion 751 is coupled to the eyeglasses 754 via a connecting member (not shown). Note that the main body portion 751 can be directly attached to the human head.

[0308] The main body 751 includes a display unit and a control panel for controlling the operation of the see-through head-mounted display 750. An arm 752 connects the main body 751 and the lens barrel 753 and supports the lens barrel 753. Specifically, the arm 752 is bonded to each of the ends of the main body 751 and the lens barrel 753, and fixes the lens barrel 753. The arm 752 includes signal lines for transmitting image-related data provided from the main body 751 to the lens barrel 753. The display unit of the main body 751 is constructed using the display device 1 according to the above embodiment.

[0309] The lens barrel 753 allows image light supplied from the main body 751 via the arm 752 to pass through the lens of the glasses 754, so as to project the image light toward the eyes of the user wearing the see-through head-mounted display 750.

[0310] Specific Example 5

[0311] Figure 42 This is an example diagram illustrating the appearance of a television device 800. (See diagram for example.) Figure 42 As shown, the television device 800 includes a movable image display screen portion 801. The movable image display screen portion 801 includes, for example, a front panel 802 and a light filter glass 803. The movable image display screen portion 801 is constituted by the display device 1 according to the above embodiment.

[0312] Specific Example 6

[0313] Figure 43 and Figure 44 These are diagrams showing the interior configuration of each of the 900 vehicles. Figure 43 The diagram illustrates the interior state of vehicle 900 from the rear to the front. Figure 44 The diagram illustrates the interior of vehicle 900 from the rear to the front.

[0314] like Figure 43 and Figure 44 As shown, the vehicle 900 includes a central display 951, a console display 952, a head-up display 953, a digital rearview mirror 954, a steering wheel display 955, and a rear entertainment display 956. Any or all of these displays 951 to 956 are constituted by the display device 1 according to the above embodiment.

[0315] The central display 951 is located in the instrument panel 904 facing the driver's seat 901 and the passenger seat 902. Figure 43 and Figure 44 Examples of central displays 951 (951C, 951L, and 951R) with a horizontally elongated shape extending from one side of the driver's seat 901 to the other side of the passenger seat 902 are illustrated. However, any screen size and arrangement can be selected for the central display 951. The central display 951 can display information detected by various sensors. As specific examples, the central display 951 can display captured images by an image sensor, images of distances to obstacles in front of or to the sides of the vehicle measured by a ToF sensor, passenger body temperature detected by an infrared sensor, etc. For example, the central display 951 can be used to display at least one of the following: safety-related information, operation-related information, life log, health-related information, authentication / identification-related information, and entertainment-related information.

[0316] Safety-related information includes information such as drowsy driving detection, inattentive driving detection, child misbehavior detection, information regarding seatbelt fastening, and detection of occupant abandonment. Safety-related information is detected, for example, by sensors arranged in an overlapping manner on the rear surface of the central display 951. Operation-related information is obtained by detecting occupant gestures related to their actions using sensors. Gestures to be detected may include gestures for operating various equipment within the vehicle 900. For example, detecting operations on air conditioning, navigation, AV equipment, lighting, etc. A life log includes the life logs of all occupants. For example, the life log includes a record of the behavior of each occupant within the vehicle. By acquiring and storing the life logs, it is possible to check the occupant's condition in the event of an accident. Health-related information is obtained by detecting the occupant's body temperature using a temperature sensor and estimating the occupant's health condition based on the detected body temperature. Alternatively, the occupant's health condition can be estimated by capturing an image of the occupant's face using an image sensor and from the facial expressions of the imaged face. Furthermore, automated voice can be used to converse with the occupant, and the occupant's health condition can be estimated based on the content of the occupant's responses. Information related to authentication / identification includes keyless entry functions that use sensors to perform facial authentication, and automatic seat height or position adjustment functions for facial recognition. Information related to entertainment includes functions that use sensors to detect occupant interaction with AV equipment, and functions that use sensors to recognize occupant faces to provide content tailored to the occupant by the AV equipment.

[0317] For example, the console display 952 can be used to display log information. The console display 952 is located near the gearshift lever 907 of the center console 906 between the driver's seat 901 and the passenger seat 902. The console display 952 can also display information detected by various sensors. The console display 952 can display images of the vehicle's surrounding environment captured by image sensors, or it can display images of the distances to obstacles around the vehicle.

[0318] The head-up display 953 is virtually displayed on the inside of the windshield 903 in front of the driver's seat 901. For example, the head-up display 953 can be used to display at least one of the following: safety-related information, operation-related information, life log, health-related information, authentication / identification-related information, and entertainment-related information. In many cases, the head-up display 953 is virtually positioned in front of the driver's seat 901. Therefore, the head-up display 953 is suitable for displaying information directly related to the operation of the vehicle 900, such as the vehicle's speed and remaining fuel (battery) level.

[0319] The digital rearview mirror 954 can display both the area behind the vehicle 900 and the status of the occupants in the rear seats. Therefore, by arranging sensors on the rear surface of the digital rearview mirror 954 in an overlapping manner, the digital rearview mirror 954 can be used to display, for example, log information.

[0320] The steering wheel display 955 is positioned near the center of the steering wheel 905 in the vehicle 900. For example, the steering wheel display 955 can be used to display at least one of the following: safety-related information, operation-related information, daily log information, health-related information, authentication / identification-related information, and entertainment-related information. In particular, the steering wheel display 955 is located near the driver's hands, making it suitable for displaying daily log information such as the driver's body temperature and information related to the operation of AV equipment, air conditioning equipment, etc.

[0321] The rear entertainment display 956 is attached to the rear surface of the driver's seat 901 and the passenger seat 902, and is for the rear seat occupants to view. For example, the rear entertainment display 956 can be used to display at least one of the following: safety-related information, operational information, lifestyle logs, health-related information, authentication / identification-related information, and entertainment-related information. Specifically, the rear entertainment display 956 is located in front of the rear seat occupants, and therefore displays information relevant to them. For example, the rear entertainment display 956 can display information related to the operation of AV equipment or air conditioning equipment, or results obtained by measuring the body temperature of the rear seat occupants using a temperature sensor.

[0322] As described above, by arranging sensors in an overlapping manner on the rear surface of the display, it is possible to measure the distance to objects present in the surrounding environment. Optical distance measurement methods are broadly classified into passive and active methods. In passive methods, light is received from the object to measure the distance without projecting light from the sensor onto the object. Passive methods include lens focusing, stereo methods, and monocular vision methods. In active methods, light is projected onto the object, and the sensor receives the reflected light from the object to measure the distance. Active methods include optical radar, active stereo methods, photometric stereo methods, moiré topology, interferometry, etc. The display device 1 according to the embodiment is suitable for any of these types of distance measurement. The above-described passive or active distance measurement can be achieved by using sensors arranged in an overlapping manner on the rear surface of the display device 1 according to the embodiment.

[0323] The electronic devices to which the display device 1 according to the embodiments can be applied are not limited to the examples described above. The display device 1 according to each embodiment can be applied to the display section of an electronic device that performs a display in any field, the display section performing the display based on an image signal input from an external source or an image signal generated within the device. That is, the technology according to this disclosure can be applied to a variety of products. For example, the display device 1 according to the embodiments can be implemented as a display section in any type of mobile body such as the vehicle 900 described above (i.e., automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility vehicles, airplanes, drones, ships, robots, construction machinery, and agricultural machinery (tractors)). Furthermore, for example, the display device 1 according to the embodiments can be applied to display sections included in endoscopic surgical systems, microsurgical systems, etc.

[0324] The embodiments, modifications, and application examples of this disclosure have been described in detail above with reference to the accompanying drawings. However, the technical scope of this disclosure is not limited to these examples. Obviously, those skilled in the art can conceive of various changes or modifications within the scope of the technical concept described in the claims, and it should be understood that these also naturally fall within the technical scope of this disclosure.

[0325] 5. Supplementary Explanation

[0326] Note that this technology can also be configured as follows.

[0327] (1) A light-emitting device, comprising:

[0328] A substrate, comprising a light-emitting region and a non-light-emitting region,

[0329] Multiple light-emitting components are disposed in the light-emitting area.

[0330] A protective layer is disposed over the luminescent and non-luminescent areas to cover the plurality of luminescent portions.

[0331] A color filter layer, wherein the color filter layer is disposed on the protective layer, wherein

[0332] The thickness of the protective layer differs between the luminescent and non-luminescent areas.

[0333] (2) In the light-emitting device described in (1) above, the protective layer is an inorganic layer.

[0334] (3) In the light-emitting device described in (1) or (2) above, the boundary of the thickness difference of the protective layer exists in the non-light-emitting area.

[0335] (4) In any of the light-emitting devices described in (1) to (3) above, the thickness of the protective layer in the non-light-emitting area is greater than the thickness of the protective layer in the light-emitting area.

[0336] (5) In the light-emitting device described in any one of (1) to (4) above, the plurality of light-emitting portions include:

[0337] A first electrode layer is disposed on the light-emitting area;

[0338] An organic layer, wherein the organic layer is disposed on the first electrode layer and the non-light-emitting region; and

[0339] The second electrode layer is disposed on the organic layer and the non-light-emitting region, wherein...

[0340] The boundary of the thickness difference of the protective layer exists on the outside of the protective layer relative to the outer periphery of the organic layer.

[0341] (6) In the light-emitting device described in (5) above, the thickness of the protective layer in the non-layered region of the organic layer is greater than the thickness of the protective layer in the layered region of the organic layer.

[0342] (7) In the light-emitting device described in (5) or (6) above, the boundary of the thickness difference of the protective layer exists on the inner side of the protective layer relative to the outer peripheral end of the second electrode layer.

[0343] (8) In the light-emitting device described in (5) or (6) above, the boundary of the thickness difference of the protective layer exists on the outside of the protective layer relative to the outer peripheral end of the second electrode layer.

[0344] (9) In the light-emitting device described in (8) above, the thickness of the protective layer in the non-layered region of the second electrode layer is greater than the thickness of the protective layer in the layered region of the second electrode layer.

[0345] (10) The light-emitting device described in (8) or (9) above further includes a sealing layer disposed in the outer edge region of the protective layer, wherein

[0346] The boundary of the thickness difference of the protective layer exists on the inner side of the protective layer relative to the inner circumferential end of the sealing layer.

[0347] (11) The light-emitting device described in (5) or (6) above further includes a sealing layer disposed in the outer edge region of the protective layer, wherein

[0348] The boundary of the thickness difference of the protective layer exists on the outer side of the protective layer relative to the inner circumferential end of the sealing layer.

[0349] (12) In the light-emitting device described in (11) above, the thickness of the protective layer in the layered region of the sealing layer is greater than the thickness of the protective layer in the non-layered region of the sealing layer.

[0350] (13) In any of the light-emitting devices described in (1) to (3) above, the thickness of the protective layer in the non-light-emitting area is less than the thickness of the protective layer in the light-emitting area.

[0351] (14) In any of the light-emitting devices described in (1) to (13) above, the protective layer includes a stepped portion that generates a layer thickness difference.

[0352] (15) In the light-emitting device described in (14) above, the step portion includes an inclined surface.

[0353] (16) In the light-emitting device described in (14) or (15) above, the step portion includes a concave-convex portion.

[0354] (17) In any of the light-emitting devices described in (14) to (16) above, the step portion includes a recessed portion.

[0355] (18) In the light-emitting device described in (17) above, the step portion includes an extension that is connected to the recessed portion.

[0356] (19) In an electronic device that includes a light-emitting device,

[0357] The light-emitting device includes:

[0358] A substrate, comprising a light-emitting region and a non-light-emitting region,

[0359] Multiple light-emitting components are disposed in the light-emitting area.

[0360] A protective layer is disposed over the luminescent and non-luminescent areas to cover the plurality of luminescent portions.

[0361] A color filter layer, wherein the color filter layer is disposed on the protective layer, wherein

[0362] The thickness of the protective layer differs between the luminescent and non-luminescent areas.

[0363] (20) A method for manufacturing a light-emitting device, comprising:

[0364] Multiple light-emitting parts are arranged in the light-emitting area of ​​the substrate, which includes both light-emitting and non-light-emitting areas.

[0365] A protective layer is provided over the luminescent and non-luminescent areas to cover the multiple luminescent portions, and

[0366] A color filter layer is set on the protective layer, wherein

[0367] The thickness of the protective layer differs between the luminescent and non-luminescent areas.

[0368] (21) An electronic device comprising a light-emitting device according to any one of (1) to (18) above.

[0369] (22) A method of manufacturing a light-emitting device, comprising manufacturing a light-emitting device according to any one of (1) to (18).

[0370] List of reference numerals

[0371] 1 Display device

[0372] 10 substrates

[0373] 11 Horizontal drive circuit

[0374] 12 Vertical drive circuits

[0375] 20 anode layer

[0376] 21 Anode electrode

[0377] 30 organic layers

[0378] 40 cathode layer

[0379] 50 protective layers

[0380] 50a floor

[0381] 50b floor

[0382] 50c layer

[0383] 50d layer

[0384] 50e floor

[0385] 50th floor

[0386] 51 steps

[0387] 51a Depression

[0388] 51b Inclined Surface

[0389] 51c concave and convex parts

[0390] 51d groove section

[0391] 52 Extension

[0392] 60 color filter layers

[0393] 60B color filter

[0394] 60G color filter

[0395] 60R color filter

[0396] 70 fill layers

[0397] 80 sealing layer

[0398] 90 transparent substrate

[0399] 100 light-emitting elements

[0400] 101 Light-emitting parts

[0401] 102 drive circuit

[0402] R1a pixel area

[0403] R1b non-pixel region

[0404] R2a layered region

[0405] R2b non-hierarchical region

[0406] R3a layered region

[0407] R3b non-hierarchical region

[0408] R4a Non-hierarchical Region

[0409] R4b layered region

[0410] A1 Foreign Object

[0411] A2 Moisture

[0412] B1 Rectangular shape

[0413] B2 Enclosure

[0414] B3 oval shape

[0415] B4 is a long and thin shape.

[0416] M1 mask

Claims

1. A light-emitting device, comprising: A substrate, the substrate comprising a light-emitting region and a non-light-emitting region; Multiple light-emitting portions are disposed in the light-emitting area; A protective layer is disposed above the light-emitting area and the non-light-emitting area to cover the plurality of light-emitting portions; as well as A color filter layer is disposed on the protective layer, wherein... The thickness of the protective layer is different in the luminescent area and the non-luminescent area.

2. The light-emitting device according to claim 1, wherein the protective layer is an inorganic layer.

3. The light-emitting device according to claim 1, wherein the boundary of the thickness difference of the protective layer exists in the non-light-emitting region.

4. The light-emitting device according to claim 1, wherein the thickness of the protective layer in the non-light-emitting area is greater than the thickness of the protective layer in the light-emitting area.

5. The light-emitting device according to claim 1, wherein the plurality of light-emitting parts comprises: A first electrode layer is disposed on the light-emitting area; An organic layer is disposed on the first electrode layer and the non-light-emitting region; as well as A second electrode layer is disposed on the organic layer and the non-light-emitting region, wherein... The boundary of the thickness difference of the protective layer exists on the outside of the protective layer relative to the outer peripheral end of the organic layer.

6. The light-emitting device according to claim 5, wherein the thickness of the protective layer in the non-layered region of the organic layer is greater than the thickness of the protective layer in the layered region of the organic layer.

7. The light-emitting device according to claim 5, wherein the boundary of the thickness difference of the protective layer exists on the inner side of the protective layer relative to the outer peripheral end of the second electrode layer.

8. The light-emitting device according to claim 5, wherein the boundary of the thickness difference of the protective layer exists on the outside of the protective layer relative to the outer peripheral end of the second electrode layer.

9. The light-emitting device according to claim 8, wherein the thickness of the protective layer in the non-layered region of the second electrode layer is greater than the thickness of the protective layer in the layered region of the second electrode layer.

10. The light-emitting device according to claim 8, further comprising a sealing layer disposed in the peripheral edge region of the protective layer, wherein... The boundary of the thickness difference of the protective layer exists on the inner side of the protective layer relative to the inner circumferential end of the sealing layer.

11. The light-emitting device according to claim 5, further comprising a sealing layer disposed in the peripheral edge region of the protective layer, wherein... The boundary of the thickness difference of the protective layer exists on the outer side of the protective layer relative to the inner circumferential end of the sealing layer.

12. The light-emitting device according to claim 11, wherein the thickness of the protective layer in the layered region of the sealing layer is greater than the thickness of the protective layer in the non-layered region of the sealing layer.

13. The light-emitting device according to claim 1, wherein the thickness of the protective layer in the non-light-emitting region is less than the thickness of the protective layer in the light-emitting region.

14. The light-emitting device of claim 1, wherein the protective layer includes a stepped portion configured to generate a layer thickness difference.

15. The light-emitting device according to claim 14, wherein the stepped portion includes an inclined surface.

16. The light-emitting device according to claim 14, wherein the stepped portion includes an uneven portion.

17. The light-emitting device according to claim 14, wherein the stepped portion includes a recessed portion.

18. The light-emitting device of claim 17, wherein the stepped portion includes an extension connected to the recessed portion.

19. An electronic device, comprising a light-emitting device, The light-emitting device includes: A substrate, the substrate comprising a light-emitting region and a non-light-emitting region; Multiple light-emitting portions are disposed in the light-emitting area; A protective layer is disposed above the light-emitting area and the non-light-emitting area to cover the plurality of light-emitting portions; as well as A color filter layer is disposed on the protective layer, wherein... The thickness of the protective layer is different in the luminescent area and the non-luminescent area.

20. A method for manufacturing a light-emitting device, the method comprising: Multiple light-emitting portions are disposed in the light-emitting region on a substrate that includes a light-emitting region and a non-light-emitting region; A protective layer is provided over the light-emitting area and the non-light-emitting area to cover the plurality of light-emitting parts; as well as A color filter layer is disposed on the protective layer, wherein The thickness of the protective layer is different in the luminescent area and the non-luminescent area.

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