Modification method of PDMS chip and PDMS chip
By filling non-target areas of a PDMS chip with metallic materials and modifying them, the problem of modifier volatilization was solved, and the precision of local hydrophilic-hydrophobic modification of the PDMS chip was achieved, generating target droplets.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LEAD HEALTHCARE TECHNOLOGY (GUANGZHOU) CO LTD
- Filing Date
- 2025-12-12
- Publication Date
- 2026-04-17
AI Technical Summary
In existing technologies, the modifiers in PDMS chips tend to volatilize into non-target areas, causing these areas to be modified and preventing the formation of target droplets.
The non-target area is filled with metal material, which is then heated, melted, and solidified before being injected into the target area to modify it. After modification, the metal material is heated and discharged to avoid the volatilization of the modifier.
This effectively prevents the modifier from evaporating into non-target areas, ensuring the precision of local hydrophilic/hydrophobic modification of the PDMS chip and generating the target droplets.
Smart Images
Figure CN121869480A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of microfluidics technology, and in particular to a method for modifying a PDMS chip and a PDMS chip. Background Technology
[0002] In related technologies, complex emulsion droplets (also known as multiple emulsions) are droplets with complex structures, typically in the form of "water-in-oil-in-water" (W / O / W) or "oil-in-water-in-oil" (O / W / O). This "droplet within a droplet" structure brings many unique functions, making it promising for applications in several high-end fields, such as drug delivery and controlled release, cosmetics and personal care products, the food industry, chemical and materials synthesis, environmental remediation and separation technologies, biotechnology and tissue engineering, etc.
[0003] The most critical step in preparing complex emulsion droplets is to achieve localized hydrophilic-hydrophobic modification (partially hydrophilic, partially hydrophobic) of the flow channels in the PDMS (polydimethylsiloxane) chip. Currently, the most commonly used method is convection modification. However, since modifiers (such as polyethylene glycol) are often volatile, they can easily adhere to non-target areas due to volatilization, leading to over-convection modification. Consequently, non-target areas are also modified, preventing the PDMS chip from generating the target droplets. Summary of the Invention
[0004] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a method for modifying PDMS chips, which, when performing local hydrophilic-hydrophobic modification on the flow channels of PDMS chips, can prevent the modifier from volatilizing into non-target areas of the PDMS chip that do not require modification.
[0005] This application also proposes a PDMS chip manufactured using the above-described modification method for PDMS chips.
[0006] The method for modifying a PDMS chip according to the first aspect of this application includes the following steps: Prepare a PDMS chip, wherein the flow channel of the PDMS chip has a target region that needs to be modified and a non-target region that does not need to be modified; Prepare a metal material, heat and melt the metal material into a liquid state, and then inject it into the non-target area to fill the non-target area; Cooling treatment is performed to solidify the liquid metal material filling the non-target area into a solid state; Prepare a modifier and inject the modifier into the target area; After the target region is modified, the non-target region is heated to melt and remove the metal material from the non-target region.
[0007] The PDMS chip modification method according to the embodiments of this application has at least the following beneficial effects: When performing local hydrophilic-hydrophobic modification on the flow channels of the PDMS chip, the metal material is heated and melted into a liquid state and then injected into a non-target area to fill the non-target area. After the liquid metal material filled in the non-target area solidifies into a solid state, a modifier is injected into the target area for modification. After the modification of the target area is completed, the non-target area is heated to melt and remove the metal material in the non-target area. Compared with the traditional PDMS chip modification method, the PDMS chip modification method of this application can avoid the volatilization of the modifier into the non-target areas of the PDMS chip that do not need modification.
[0008] According to some embodiments of this application, the melting point of the metallic material is below 100°C.
[0009] According to some embodiments of this application, the metallic material is one of gallium, gallium-indium-tin alloy, Wood's alloy, indium-bismuth alloy, Ross alloy, and Field alloy.
[0010] According to some embodiments of this application, the preparation of the metal material, which involves heating and melting the metal material into a liquid state and then injecting it into the non-target area to fill the non-target area, includes: A glass syringe is used to inject the metal material, which has been heated and melted into a liquid state, into the non-target area.
[0011] According to some embodiments of this application, the injection of the metal material, heated and melted into a liquid state, into the non-target area using a glass syringe includes: The syringe is propelled by a syringe pump.
[0012] According to some embodiments of this application, the injection of the metal material, heated and melted into a liquid state, into the non-target area using a glass syringe includes: The solid metal material is placed inside the syringe, and a heating structure is provided on the outside of the syringe to heat and melt the metal material inside the syringe.
[0013] According to some embodiments of this application, the non-target region has a first end for injecting the liquid metal material and a second end communicating with the target region, wherein, after the modification of the target region is completed, heating the non-target region to melt and discharge the metal material within the non-target region includes: After the metal material in the non-target area is heated and melted into a liquid state, gas flowing towards the second end is introduced into the target area to discharge the metal material in the non-target area through the first end.
[0014] According to some embodiments of this application, the non-target region has a second end connected to the target region, and a narrowing section is provided at the second end, wherein the cross-sectional area of the narrowing section decreases from the end of the narrowing section away from the target region to the end of the narrowing section close to the target region.
[0015] According to some embodiments of this application, the cross-sectional reduction rate of the constricted section is 0.25 to 0.8.
[0016] The PDMS chip according to the second aspect of this application is manufactured using the modification method of the PDMS chip according to the first aspect of this application described above.
[0017] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description
[0018] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic flowchart of a method for modifying a PDMS chip according to an embodiment of this application; Figure 2 This is a schematic diagram of the target region to be modified and the non-target region that does not need to be modified in a PDMS chip according to an embodiment of this application; Figure 3 This is a schematic diagram of the structure of a PDMS chip according to an embodiment of this application, after filling the non-target area that does not require modification with metal material.
[0019] Figure label: Target area 100; Non-target area 200, narrowing section 210. Detailed Implementation
[0020] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0021] In the description of this application, it should be understood that if directional descriptions are involved, such as up, down, front, back, left, right, etc., indicating the directional or positional relationship based on the directional or positional relationship shown in the accompanying drawings, it is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0022] In the description of this application, if words such as several, greater than, less than, exceeding, above, below, or within appear, "several" means one or more, "more than" means two or more, "greater than," "less than," "exceeding," etc. are understood to exclude the number itself, and "above," "below," "within," etc. are understood to include the number itself.
[0023] In the description of this application, the use of terms such as "first" and "second" is for the purpose of distinguishing technical features only, and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or the order of the technical features indicated.
[0024] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.
[0025] Reference Figures 1 to 3 The method for modifying a PDMS chip according to an embodiment of this application includes the following steps: S100: Prepare a PDMS chip. The flow channel of the PDMS chip has a target region 100 that needs to be modified and a non-target region 200 that does not need to be modified. S200: Prepare metal material, heat and melt the metal material into a liquid state and then inject it into the non-target area 200 to fill the non-target area 200; S300: Cooling process to solidify the liquid metal material filling the non-target area 200 into a solid state; S400: Prepare the modifier and inject it into the target area 100; S500: After completing the modification of the target region 100, heat the non-target region 200 to melt and remove the metal material in the non-target region 200.
[0026] When performing localized hydrophilic-hydrophobic modification on the flow channels of a PDMS chip, a metal material is heated and melted into a liquid state and then injected into a non-target region 200 to fill the non-target region 200. After the liquid metal material filling the non-target region 200 solidifies, a modifier is injected into the target region 100 for modification. After the modification of the target region 100 is completed, the non-target region 200 is heated to melt and remove the metal material within the non-target region 200. Compared with traditional PDMS chip modification methods, the PDMS chip modification method of this application can avoid the volatilization of the modifier into the non-target region 200 of the PDMS chip that does not require modification.
[0027] In some embodiments, after the target region 100 is modified, the non-target region 200 is heated to melt and remove the metallic material within the non-target region 200, including: The PDMS chip is placed on an electric heating plate to heat the non-target area 200, or the non-target area 200 of the PDMS chip is heated by a hot air gun.
[0028] It should be noted that in some other embodiments, other types of heating structures, such as thermocouples, can also be used to heat the non-target area 200. This application does not impose any specific limitations.
[0029] In some embodiments, the modifier may be an aqueous solution of polyvinyl alcohol (PVA). Of course, the modifier may also be an aqueous solution of polyethylene glycol or selected according to actual needs. This application does not impose specific limitations.
[0030] In some embodiments, the melting point of the aforementioned metallic material is below 400°C. Specifically, the melting point of the aforementioned metallic material is below 100°C. On the one hand, a lower melting point facilitates the melting and solidification of the metallic material, thereby reducing operational difficulty. On the other hand, a lower melting point helps reduce the risk of the PDMS chip being damaged by heat and the operator being burned.
[0031] In some of these embodiments, the metal material is one of gallium, gallium indium tin alloy, Wood's alloy, indium bismuth alloy, Ross alloy, and Field alloy, thereby giving the metal material a low melting point.
[0032] In some embodiments, a metallic material is prepared, heated and melted into a liquid state, and then injected into the non-target region 200 to fill the non-target region 200, including: A glass syringe is used to inject a heated and molten metal material into a non-target area 200.
[0033] On the one hand, glass syringes can withstand high temperatures; on the other hand, the amount of liquid metal injected can be controlled by the syringe's scale, which helps prevent the injected liquid metal from flowing into the target area 100 due to excessive amount.
[0034] In some embodiments, a glass syringe is used to inject a heated and molten metal material into a non-target area 200, including: A syringe pump is used to propel the syringe.
[0035] Compared to manually pushing the syringe, it allows for more precise control over the amount of liquid metal material injected.
[0036] Specifically, the structure and working principle of an injection pump are well-known technologies. An injection pump is usually composed of components such as a stepper motor, lead screw, and support. It is generally used to push the piston of a syringe to inject fluid, and can achieve high-precision, stable, and pulsation-free liquid transfer.
[0037] In some embodiments, a glass syringe is used to inject a heated and molten metal material into a non-target area 200, including: A solid metal material is placed inside the syringe, and a heating structure is set on the outside of the syringe to heat and melt the metal material inside the syringe.
[0038] On the one hand, it can directly heat the inside of the syringe to form a liquid metal material. Before injecting the liquid metal material into the non-target area 200, there is no need to transfer the liquid metal material, which helps to reduce the difficulty of operation. On the other hand, the heating structure can keep the liquid metal material inside the syringe warm to prevent the liquid metal material from solidifying into a solid.
[0039] In some embodiments, the heating structure is an electric heating block disposed outside the syringe. Of course, the heating structure can also be an electric heating wire or other heating component disposed outside the syringe. This application does not impose any specific limitations.
[0040] In some embodiments, the non-target region 200 has a first end for injecting liquid metal material and a second end communicating with the target region 100, wherein, after the modification of the target region 100 is completed, the non-target region 200 is heated to melt and discharge the metal material within the non-target region 200, including: After the metal material in the non-target area 200 is heated and melted into a liquid state, gas flowing towards the second end of the non-target area 200 is introduced into the target area 100 to discharge the metal material in the non-target area 200 through the first end of the non-target area 200.
[0041] The gas introduced enters the non-target region 200 through the second end of the non-target region 200 connected to the target region 100, so that the metal material in the non-target region 200 is discharged through the first end of the non-target region 200, thereby preventing the metal material in the non-target region 200 from entering the target region 100, and thus protecting the modified target region 100.
[0042] In some embodiments, the gas can be air; of course, the gas can also be nitrogen or an inert gas, and this application does not impose any specific limitations.
[0043] Reference Figure 2 and Figure 3In some embodiments, the non-target region 200 has a second end connected to the target region 100, at which a constriction section 210 is provided. The cross-sectional area of the constriction section 210 decreases from the end of the constriction section 210 away from the target region 100 to the end of the constriction section 210 closer to the target region 100. This increases the resistance of the liquid metal material at the junction of the non-target region 200 and the target region 100 (the second end of the non-target region 200), thereby limiting the flow of the liquid metal material into the target region 100.
[0044] In some embodiments, the cross-sectional reduction rate of the narrowed section 210 is 0.25 to 0.8. Specifically, the cross-sectional reduction rate of the narrowed section 210 can be 0.25, 0.8, 0.5, or other values within the above range.
[0045] It should be noted that the formula for calculating the cross-sectional reduction rate is N=(S1-S2) / S1, where N is the cross-sectional reduction rate, S1 is the cross-sectional area of the end of the narrowed section 210 away from the target region 100, and S2 is the cross-sectional area of the end of the narrowed section 210 close to the target region 100.
[0046] It should be noted that the cross-sectional area mentioned above refers to the flow channel, not the physical structure that forms the flow channel.
[0047] The PDMS chip according to an embodiment of this application is manufactured using the above-described PDMS chip modification method.
[0048] In the description of this specification, the use of terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," and "some examples" indicates that the specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0049] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.
Claims
1. A method for modifying a PDMS chip, characterized in that, Includes the following steps: Prepare a PDMS chip, wherein the flow channel of the PDMS chip has a target region that needs to be modified and a non-target region that does not need to be modified; Prepare a metal material, heat and melt the metal material into a liquid state, and then inject it into the non-target area to fill the non-target area; Cooling treatment is performed to solidify the liquid metal material filling the non-target area into a solid state; Prepare a modifier and inject the modifier into the target area; After the target region is modified, the non-target region is heated to melt and remove the metal material from the non-target region.
2. The method of modifying a PDMS chip of claim 1, wherein, The melting point of the metallic material is below 100°C.
3. The method of modifying a PDMS chip of claim 1, wherein, The metallic material is one of gallium, gallium-indium-tin alloy, Wood's alloy, indium-bismuth alloy, Ross alloy, and Field alloy.
4. The method of modifying a PDMS chip of claim 1, wherein, The preparation of the metal material, which involves heating and melting the metal material into a liquid state and then injecting it into the non-target area to fill the non-target area, includes: A glass syringe is used to inject the metal material, which has been heated and melted into a liquid state, into the non-target area.
5. The method of modifying a PDMS chip of claim 4, wherein, The injection of the metal material, heated and melted into a liquid state, into the non-target area using a glass syringe includes: The syringe is propelled by a syringe pump.
6. The method of modifying a PDMS chip of claim 4, wherein, The injection of the metal material, heated and melted into a liquid state, into the non-target area using a glass syringe includes: The solid metal material is placed inside the syringe, and a heating structure is provided on the outside of the syringe to heat and melt the metal material inside the syringe.
7. The method for modifying a PDMS chip as described in claim 1, characterized in that, The non-target region has a first end for injecting the liquid metal material and a second end connected to the target region, wherein, after the modification of the target region is completed, the non-target region is heated to melt and discharge the metal material within the non-target region, including: After the metal material in the non-target area is heated and melted into a liquid state, gas flowing towards the second end is introduced into the target area to discharge the metal material in the non-target area through the first end.
8. The method of modifying a PDMS chip of claim 1, wherein, The non-target region has a second end connected to the target region, and a narrowing section is provided at the second end, wherein the cross-sectional area of the narrowing section decreases from the end of the narrowing section away from the target region to the end of the narrowing section close to the target region.
9. The method of modifying a PDMS chip of claim 8, wherein, The cross-sectional reduction rate of the narrowed section is 0.25 to 0.
8.
10. A PDMS chip, characterized by, It is manufactured using the modification method of the PDMS chip as described in any one of claims 1 to 9.