Single-laser-head DOE light splitting processing device for perovskite battery and method of single-laser-head DOE light splitting processing device
By introducing DOE elements into the single laser head system of perovskite solar cells, the problems of uneven energy distribution of Gaussian spot and multi-laser beam splitting system are solved, achieving uniform energy distribution and process consistency, improving etching quality and power generation efficiency, and reducing equipment costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JINGLING (NANJING) ELECTRIC POWER TECHNOLOGY CO LTD
- Filing Date
- 2026-01-14
- Publication Date
- 2026-04-17
AI Technical Summary
Existing laser processing technology for perovskite solar cells suffers from problems such as uneven energy distribution, narrow process window, low material utilization, and high equipment cost. In particular, excessive energy at the center of the Gaussian spot leads to thermal damage, while insufficient energy at the edge results in discontinuous scribing. Multi-laser beam splitting systems increase equipment cost and maintenance difficulty.
A single-laser-head DOE beam splitting processing device is adopted, which includes a laser, a variable magnification beam expander, a DOE element and a focusing lens. By adjusting the working angle and position of the DOE element, the Gaussian spot is shaped into a circular flat-top spot with uniform energy. The DOE element is directly integrated into the existing single laser system to achieve uniform spot energy distribution and process consistency.
This achieves uniform laser energy distribution, reduces thermal damage, improves etching quality and power generation efficiency, reduces equipment costs and maintenance difficulty, and ensures process consistency.
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Figure CN121870285A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of perovskite solar cell technology, and more specifically, to a single-laser-head DOE beam splitting apparatus and method for perovskite solar cells. Background Technology
[0002] Perovskite solar cells have become a research hotspot in the photovoltaic field due to their high efficiency, low cost, and solution-processability. Laser processing technology (such as P1 / P2 / P3 scribing and edge isolation) is a key process in their fabrication, directly affecting the series resistance, fill factor, and final efficiency of the cell. Currently, laser processing typically uses a Gaussian spot (with energy distributed normally from high in the center to low at the edges), but it has the following drawbacks: Defects and shortcomings of existing technology: 1. Uneven energy distribution: Excessive energy at the center of the Gaussian spot can easily lead to thermal damage to the perovskite layer or the underlying material (such as excessive ablation and expansion of the thermal diffusion zone), while insufficient energy at the edge may result in discontinuous scribing. 2. Narrow process window: Important factors such as crater, linewidth, and etching depth can be significantly affected by small changes in process parameters (such as power, focal length, speed, etc.), which is detrimental to the consistency of product results and yield. 3. Low material utilization: The energy of the Gaussian spot is distributed with high energy in the center and low energy at the edge. The effective processing area is only concentrated in the part with high energy distribution. The low energy part at the edge cannot remove the film layer, which increases the dead zone area and reduces the overall power generation area.
[0003] 4. Multi-laser beam splitting system: Requires multiple additional lasers, increasing equipment cost by 3 to 5 times. In addition, multiple optical paths need to be calibrated independently, making maintenance difficult and requiring a large amount of space, which is not suitable for small and medium-sized production lines. Summary of the Invention
[0004] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a single-laser-head DOE beam splitting processing device and method for perovskite solar cells, thereby solving one or more of the above-mentioned problems.
[0005] To achieve the above objectives, the present invention provides the following technical solution: A single-laser-head DOE beam splitting processing device for perovskite solar cells includes a laser, a variable-magnification beam expander, a DOE element, a focusing lens, and a sliding processing platform arranged sequentially in a laser processing host, with the processing platform located within the laser output range of the laser processing host.
[0006] Furthermore, the laser has a wavelength of 532nm, a pulse width of no more than 15ps, a repetition frequency of 10-2000kHz, and the laser is adapted to the absorption characteristics of the battery module.
[0007] Furthermore, the variable magnification beam expander is an adjustable beam expander with a magnification range of 1X-10X, adapting to the DOE element's requirements for the incident light spot.
[0008] Furthermore, the DOE element is a circular flat-top orthokeratology lens, and the working angle of the DOE element is adjustable.
[0009] A single-laser-head DOE beam splitting method for perovskite solar cells comprises the following steps: S1. Activate and adjust the laser, and adjust the adjustment factor of the variable beam expander; The laser outputs a Gaussian beam, which is collimated by a beam expander and then incident on the DOE element. S2. Adjust the working angle and position of the DOE component; The incident circular Gaussian spot is shaped into a circular flat-topped spot, and the intensity distribution of the target flat-topped spot is input. S3. The shaped flat-top light spot is focused onto the processing surface by a focusing lens; S4. The moving processing platform allows the laser focus to be precisely applied to the predetermined position on the surface of the perovskite solar cell, completing the etching process of the P1 / P2 / P3 layers.
[0010] Furthermore, in step S1, the adjustment factor of the variable beam expander must ensure that the beam diameter output by the laser can completely cover the effective optical aperture of the DOE element.
[0011] Furthermore, the intensity distribution of the target flat-top light spot in step S2 includes the light spot shape, light spot diameter, energy uniformity, and edge steepness.
[0012] Furthermore, in step S2, the DOE element converts the incident Gaussian beam into a circular flat-top beam with an energy uniformity of ≥90%.
[0013] Furthermore, in step S3, it is still necessary to adjust the magnification of the variable beam expander and the working angle of the DOE element until the spot diameter and edge steepness meet the requirements.
[0014] Furthermore, in step S3, a flat-top light spot of 30μm±1μm is formed on the processing surface after being focused by the focusing lens.
[0015] In summary, this invention offers the following advantages: It directly integrates a single DOE element into existing single-laser and single-scriber systems, requiring only the insertion of the DOE element into the existing optical path without increasing the number of lasers or splitting the optical path, resulting in significantly lower costs compared to existing laser beam splitting systems; it reshapes the Gaussian spot into a flat-topped spot, leading to more uniform energy distribution, reduced heat loss at the center, and a substantial decrease in damage to the non-scribed film layer, resulting in even lower energy loss; the same DOE element design can be adapted to multiple identical devices, ensuring process consistency and strong compatibility; after etching, the linewidth is consistent with minimal error, improving etching quality, thereby reducing dead zones and increasing power generation efficiency. Attached Figure Description
[0016] Figure 1 A schematic diagram of the optical path structure of one embodiment of the present invention is provided; Figure 2 The present invention provides a laser optical path design for a single scribing head beam splitting system according to one embodiment of the present invention.
[0017] In the diagram: 1. Laser; 2. Variable magnification beam expander; 3. DOE element; 4. Focusing lens; 5. Processing platform. Detailed Implementation
[0018] Example: The following is in conjunction with the appendix Figure 1-2 The present invention will be described in further detail below.
[0019] A single-laser-head DOE spectroscopic processing device for perovskite solar cells is proposed, based on an existing single-laser-head single-scrubbing system, equipped with sections for a cell loading table, a laser processing main unit, and a cell unloading table. The main design modifications are in the laser processing main unit area, such as... Figure 1 As shown, the system includes a laser 1, a variable-magnification beam expander 2, a DOE element 3, a focusing lens 4, and a sliding processing platform 5, all sequentially arranged within the laser processing host. The processing platform 5 is located within the laser output range of the laser processing host. The laser 1 is a picosecond green laser with performance parameters meeting the requirements of a wavelength of 532nm, a pulse width of no more than 15ps, and a repetition frequency of 10-2000kHz. The laser 1 is adapted to the absorption characteristics of the perovskite cell module. The variable-magnification beam expander is an adjustable beam expander with a magnification range of 1X-10X, adapted to the incident light spot requirements of the DOE element 3. The DOE element 3, as the core component, uses a circular flat-top shaping lens, and its working angle is adjustable. The DOE element 3 can shape a circular Gaussian spot into a circular flat-top spot. The focusing lens can focus the shaped flat-top spot onto the surface of the perovskite cell.
[0020] Based on the processing method of the single-laser-head DOE beam splitting apparatus for perovskite solar cells described above, such as Figure 2 As shown, the steps are as follows: S1. Activate and adjust laser 1, and adjust the adjustment factor of the variable beam expander; Laser 1 outputs a Gaussian beam, which is collimated by a beam expander and then incident on DOE element 3. In step S1, the adjustment factor of the variable beam expander must ensure that the beam diameter output by laser 1 can completely cover the effective optical aperture of DOE element 3.
[0021] S2. Adjust the working angle and position of DOE component 3; The incident circular Gaussian spot is shaped into a circular flat-topped spot, and the intensity distribution of the target flat-topped spot is input. In step S2, the intensity distribution of the target flat-top light spot is input, including the spot shape, spot diameter, energy uniformity, and edge steepness. In step S2, DOE element 3 converts the incident Gaussian beam into a circular flat-top beam with energy uniformity ≥90%.
[0022] S3. The shaped flat-top light spot is focused onto the processing surface by the focusing lens 4; In step S3, the magnification of the variable beam expander and the working angle of the DOE element 3 still need to be adjusted until the spot diameter and edge steepness meet the requirements. In step S3, after being focused by the focusing lens 4, a flat-top light spot of 30μm±1μm is formed on the processing surface.
[0023] S4, the moving processing platform 5, enables the laser focus to be precisely applied to the predetermined position on the surface of the perovskite solar cell, completing the etching process of the P1 / P2 / P3 layers.
[0024] Etching the P1 / P2 / P3 electrodes of perovskite solar cells requires high-precision laser processing. However, traditional Gaussian laser spots, with their high energy at the center and low energy at the edges, are prone to problems. The excessively high energy at the center can easily burn the non-etched film layer, reducing cell efficiency; the gradually decreasing energy at the edges leads to incomplete etching of the insulating or electrode layers and uneven energy distribution in the heat-affected zone, easily producing defects such as burrs and large craters. Therefore, shaping the Gaussian laser spot into a flat-topped spot using a DOE element 3 effectively avoids energy accumulation, resulting in a more uniform energy distribution, reduced thermal damage at the center, and significantly reduced damage to the non-etched film layer. Furthermore, the energy distribution of the Gaussian laser spot is sensitive to the focusing position; defocusing causes significant changes in energy distribution, making it difficult to guarantee processing consistency. Adding a DOE element 3 effectively improves this situation, and the same DOE element 3 design can be used on multiple identical machines, effectively ensuring process consistency; etching quality is also effectively improved, with the linewidth consistency error after etching reduced to ±0.2μm, thereby reducing dead zones and improving power generation utilization. By directly integrating a single DOE element 3 into the existing single laser 1 + single scribing head system, only the DOE element 3 module needs to be inserted into the original optical path. There is no need to increase the number of additional lasers 1 or split the optical path. The optical path adjustment is achieved by combining the variable beam expander 2, DOE element 3 and focusing lens 4. The cost is far lower than configuring an additional laser 1 beam splitting system. In contrast, traditional multi-scribable head beam splitting, such as prisms and beam splitters, will cause a loss of about 20-30% of the energy per beam split. Moreover, multiple optical paths require independent calibration of the optical path and focusing lens, which is difficult to maintain. The design of this application can effectively reduce energy loss.
[0025] It should be noted that this specific embodiment is merely an explanation of the present invention and is not intended to limit the present invention. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but as long as they are within the scope of the claims of the present invention, they are protected by patent law.
Claims
1. A single-laser-head DOE beam splitting device for perovskite solar cells, characterized in that: It includes a laser, a variable magnification beam expander, a DOE element, a focusing lens, and a sliding processing platform, which are sequentially arranged in the laser processing host and are located within the laser output range of the laser processing host.
2. The single-laser-head DOE beam splitting apparatus for perovskite solar cells according to claim 1, characterized in that: The laser has a wavelength of 532nm, a pulse width of no more than 15ps, and a repetition frequency of 10-2000kHz. The laser is adapted to the absorption characteristics of the battery module.
3. The single-laser-head DOE beam splitting apparatus for perovskite solar cells according to claim 1, characterized in that: The variable magnification beam expander is an adjustable beam expander with a magnification range of 1X-10X. The variable magnification beam expander is adapted to the DOE element's requirements for the incident light spot.
4. The single-laser-head DOE beam splitting apparatus for perovskite solar cells according to claim 1, characterized in that: The DOE element is a circular, flat-topped orthokeratology lens, and its working angle is adjustable.
5. A single-laser-head DOE beam splitting method for perovskite solar cells, characterized in that: The steps are as follows: S1. Activate and adjust the laser, and adjust the adjustment factor of the variable beam expander; The laser outputs a Gaussian beam, which is collimated by a beam expander and then incident on the DOE element. S2. Adjust the working angle and position of the DOE component; The incident circular Gaussian spot is shaped into a circular flat-topped spot, and the intensity distribution of the target flat-topped spot is input. S3. The shaped flat-top light spot is focused onto the processing surface by a focusing lens; S4. The moving processing platform allows the laser focus to be precisely applied to the predetermined position on the surface of the perovskite solar cell, completing the etching process of the P1 / P2 / P3 layers.
6. The single-laser-head DOE beam splitting method for perovskite solar cells according to claim 5, characterized in that: In step S1, the adjustment factor of the variable beam expander must ensure that the beam diameter output by the laser can completely cover the effective optical aperture of the DOE element.
7. The single-laser-head DOE beam splitting method for perovskite solar cells according to claim 5, characterized in that: The intensity distribution of the target flat-top light spot in step S2 includes the light spot shape, light spot diameter, energy uniformity, and edge steepness.
8. The single-laser-head DOE beam splitting method for perovskite solar cells according to claim 5, characterized in that: In step S2, the DOE element converts the incident Gaussian beam into a circular flat-top beam with an energy uniformity of ≥90%.
9. The single-laser-head DOE beam splitting method for perovskite solar cells according to claim 5, characterized in that: In step S3, the magnification of the variable beam expander and the working angle of the DOE element still need to be adjusted until the beam diameter and edge steepness meet the requirements.
10. The single-laser-head DOE beam splitting method for perovskite solar cells according to claim 5, characterized in that: In step S3, by adjusting the magnification of the variable beam expander (fine-tuning range is ±0.5X) and the working angle of the DOE element (fine-tuning range is ±1°), the diameter error of the focused flat-top spot is made ≤±0.5μm, forming a flat-top spot of 30μm±1μm on the processing surface, which meets the etching accuracy requirements.