Wafer transmission device and chemical vapor deposition equipment

Abstract

The invention provides a wafer transmission device and chemical vapor deposition equipment, and relates to the technical field of semiconductor chip manufacturing. The wafer transmission device comprises a rotating mechanism and a sealing mechanism. The rotating mechanism comprises a first driving unit and a transmission shaft, the first driving unit drives the transmission shaft to rotate, and the transmission shaft is provided with a supporting end used for supporting a wafer. The sealing mechanism is close to the supporting end of the transmission shaft, sleeves part of the transmission shaft and comprises a protective cover and a movable sealing assembly, the transmission shaft is sleeved with the movable sealing assembly, part of the movable sealing assembly is sleeved with the protective cover, and a containing cavity is formed between the inner wall of the protective cover and the movable sealing assembly. And the accommodating cavity is used for accommodating inert gas when the wafer transmission device works, so that the air pressure in the accommodating cavity is greater than that in the process cavity outside the protective cover. The wafer transmission device can solve the problem that corrosion gas enters a carrying device to cause failure of a sealing structure.

Description

Technical Field

[0001] This application relates to the field of semiconductor chip manufacturing technology, specifically to a wafer transport device and a chemical vapor deposition equipment. Background Technology

[0002] In the semiconductor manufacturing field, wafers are widely used as the most common substrate in the manufacture of chips, integrated circuits, and electronic devices. Throughout the processing, wafers require a handling device to control their position for deposition. During processing, the wafer needs to be moved to a position corresponding to atomic layer deposition (ALD) technology to deposit a thin film on its surface.

[0003] During the processing, the wafer is in a vacuum environment. Part of the handling device is located in this vacuum environment to transport the wafer. Therefore, the handling device is usually equipped with a sealed structure to prevent air from the external environment from entering the vacuum environment where the wafer is located and affecting the wafer processing.

[0004] However, the vacuum environment in which the wafer is located is filled with corrosive gases. In related technologies, these corrosive gases can easily enter the interior of the handling device through its dynamic structure and corrode the sealing structure. Contact between the sealing structure and the corrosive gases can easily affect the sealing effect, allowing outside air to enter the vacuum environment in which the wafer is located, thereby affecting the wafer processing technology. Summary of the Invention

[0005] This application provides a wafer transport device and a chemical vapor deposition equipment, which can solve the problem of sealing structure failure caused by corrosive gases entering the transport device.

[0006] On one hand, this application provides a wafer transfer device, comprising: a rotation mechanism including a first driving unit and a transmission shaft, the first driving unit driving the transmission shaft to rotate, the transmission shaft having a support end for supporting a wafer; and a sealing mechanism near the support end of the transmission shaft, the sealing mechanism being sleeved outside the transmission shaft, the sealing mechanism including a protective cover and a dynamic sealing assembly, the dynamic sealing assembly being sleeved outside a portion of the transmission shaft, the protective cover being sleeved outside a portion of the dynamic sealing assembly, and a receiving cavity between the inner wall of the protective cover and the dynamic sealing assembly, the receiving cavity being used to contain inert gas during the operation of the wafer transfer device, such that the gas pressure inside the receiving cavity is greater than the gas pressure inside the process cavity outside the protective cover. In the wafer transfer device provided by this application, the receiving cavity inside the protective cover is filled with inert gas. The inert gas can be used to increase the gas pressure inside the receiving cavity. When the air pressure inside the containment cavity is greater than the air pressure inside the process cavity outside the protective cover, the corrosive gas inside the process cavity is less likely to enter the containment cavity through the mounting hole and diffuse to key components such as the bellows, thereby reducing the possibility that the corrosive gas will affect the working performance and service life of key components such as the bellows.

[0007] According to one embodiment of this application, the receiving cavity is disposed along the vertical direction between the protective cover and the dynamic sealing assembly. The sealing mechanism further includes a flange, on which the protective cover and the dynamic sealing assembly are disposed. The flange has an airflow channel that communicates with the receiving cavity. In this embodiment, inert gas can be injected into the receiving cavity through the airflow channel on the flange. The flange can be fixed to the main frame of the wafer transfer device. Both the dynamic sealing assembly and the protective cover can be fixed to the main frame via the flange. Furthermore, since the receiving cavity refers to the space in the vertical direction between the protective cover and the dynamic sealing assembly, the vertical receiving cavity can provide movement space for the drive shaft to move up and down in the vertical direction.

[0008] According to one embodiment of this application, the dynamic sealing assembly includes a bellows and a magnetohydrodynamic (MHD) seal. The MHD seal is sleeved outside the drive shaft, and the bellows is sleeved outside the MHD seal. The MHD seal is sealed to the drive shaft and also sealed to the bellows. The drive shaft and the inner wall of the bellows are sealed together by the MHD seal, which uses a magnetic field to confine the MHD seal between the outer wall of the drive shaft and the inner wall of the bellows. The MHD seal reduces the possibility of outside air entering the protective cover's receiving cavity through the gap between the drive shaft and the bellows, and then entering the process chamber through the mounting holes of the protective cover, thereby affecting the wafer processing within the process chamber.

[0009] According to one embodiment of this application, the flange is further provided with a liquid cooling channel, which is located close to the magnetic fluid seal. Since the process chamber is a high-temperature environment during wafer fabrication, the liquid cooling channel can reduce the temperature of the magnetic fluid seal as the high temperature within the process chamber diffuses towards it through the protective cover. This makes the magnetic fluid seal less susceptible to the effects of high temperatures, thereby reducing the possibility that the high temperature environment will affect its sealing performance and service life.

[0010] According to one embodiment of this application, the bellows includes a first flange seat, a second flange seat, and a pipe body. Along the vertical direction, the pipe body connects the first flange seat and the second flange seat. The first flange seat is connected to the rotating mechanism, and the second flange seat is connected to the flange. A first gap exists between the outer wall of the first flange seat and the inner wall of the protective cover, and a second gap exists between the outer wall of the pipe body and the inner wall of the protective cover. The airflow channel communicates with the first gap, the second gap, and the receiving cavity. Particles generated by friction between the drive shaft and the inner wall of the mounting hole of the protective cover easily enter the receiving cavity. The narrow first and second gaps prevent particles in the receiving cavity from moving towards the magnetic fluid seal, thereby reducing particle contamination of the magnetic fluid seal and preventing particles from affecting the sealing performance and service life of the magnetic fluid seal.

[0011] According to one embodiment of this application, the second flange seat is provided with a first vent hole, which communicates with the receiving cavity through a first gap and a second gap. The first and second vent holes can be used to allow inert gas to pass through. The inert gas can pass through the airflow channel on the flange and the first vent hole on the second flange seat, and then sequentially through the second gap and the first gap into the receiving cavity.

[0012] According to one embodiment of this application, the sealing mechanism further includes a first sealing ring, which is disposed between the mating surfaces of the second flange seat and the flange. Along the radial direction of the drive shaft, the first sealing ring is located on the side of the first vent hole closer to the drive shaft. The first sealing ring can be used to prevent outside air from entering the receiving cavity through the gap between the second flange seat and the flange. Specifically, along the radial direction outward of the drive shaft, the area outside the first sealing ring can be the external atmospheric environment; therefore, the first sealing ring can prevent outside air from entering the bellows.

[0013] According to one embodiment of this application, the protective cover is provided with a partition plate, which divides the receiving cavity into a primary cavity and a secondary cavity that are connected along the vertical direction. The pressure of the inert gas in the primary cavity, the pressure of the inert gas in the secondary cavity, and the pressure of the corrosive gas in the process cavity can all be different. The pressure in the primary cavity, the pressure in the secondary cavity, and the pressure in the process cavity can have a small pressure difference, so as to reduce the entry of corrosive gas from the process cavity into the protective cover and its corrosion of components such as the magnetohydrodynamic seals of the wafer transmission device. Furthermore, the inert gas can first enter the primary cavity and then diffuse into the secondary cavity. There is a pressure difference between the primary cavity and the secondary cavity. Therefore, during the injection of inert gas, it is not necessary to make the pressure in the primary cavity and the secondary cavity reach the same height, thereby reducing the amount of inert gas injected and reducing energy consumption.

[0014] According to one embodiment of this application, a heat insulation pad is further included. The heat insulation pad is disposed on the side of the flange facing the support end of the drive shaft. A notch is provided on the outer edge of the heat insulation pad along the radial direction of the drive shaft, extending towards the drive shaft. The heat insulation pad can be used to block the high-temperature environment within the process cavity, reducing the possibility of high temperatures within the process cavity diffusing into the receiving cavity of the protective cover, leading to localized temperature drops within the process cavity and uneven temperature distribution within the process cavity, which could affect the uniformity of deposition. Furthermore, the heat insulation pad can also reduce the diffusion of high-temperature environments within the process cavity into the receiving cavity, which could affect the working environment of the magnetic fluid seal, potentially causing seal failure or affecting the service life of the magnetic fluid seal.

[0015] On the other hand, this application provides a chemical vapor deposition apparatus, which includes:

[0016] The process chamber contains corrosive gases;

[0017] An end effector, located within the process chamber, is used to place a wafer;

[0018] In any of the above embodiments of the wafer transfer device, the end effector is disposed at the support end of the drive shaft.

[0019] In addition to the technical problems solved by the embodiments of the present invention, the technical features constituting the technical solutions, and the beneficial effects brought about by the technical features of these technical solutions described above, other technical problems that can be solved by the wafer transport device and chemical vapor deposition equipment provided by the embodiments of the present invention, other technical features included in the technical solutions, and the beneficial effects brought about by these technical features will be further described in detail in the specific embodiments. Attached Figure Description

[0020] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0021] Figure 1 This is a partial cross-sectional view of a wafer transport device according to an embodiment of this application;

[0022] Figure 2 This is a partially exploded structural diagram of a wafer transport device according to an embodiment of this application;

[0023] Figure 3 for Figure 1 A partial structural diagram of a wafer transmission device;

[0024] Figure 4 This is a cross-sectional view of a flange according to an embodiment of this application;

[0025] Figure 5 This is a partial cross-sectional view of a wafer transport device according to another embodiment of this application;

[0026] Figure 6 This is a schematic diagram of the structure of a heat insulation pad according to an embodiment of this application;

[0027] Figure 7 This is a partial cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of this application.

[0028] Explanation of reference numerals in the attached figures:

[0029] 10-Chemical vapor deposition equipment;

[0030] 100 - Wafer transfer device; 100a - First gap; 100b - Second gap;

[0031] 110 - Rotary mechanism;

[0032] 111 - First drive unit;

[0033] 112 - Drive shaft; 112a - Support end;

[0034] 113 - Rotating base;

[0035] 120 - Lifting mechanism;

[0036] 121 - Second drive unit;

[0037] 122-Lead screw assembly; 1221-Lead screw; 1222-Lifting nut;

[0038] 123 - Guide rail;

[0039] 124-Slider;

[0040] 130 - Sealing mechanism;

[0041] 131-Protective cover; 131a-Mounting hole; 1310-Receiving cavity; 131b-Primary cavity; 131c-Secondary cavity;

[0042] 1311 - Housing; 1312 - Connecting seat; 1312a - Second vent;

[0043] 132 - Corrugated pipe;

[0044] 1321 - First flange seat;

[0045] 1322 - Second flange seat; 1322a - First vent hole;

[0046] 1323-tube body;

[0047] 133-Flange;

[0048] 133a - Airflow channel; 103a - First vertical channel; 103b - Horizontal channel; 103c - Second vertical channel; 133b - Liquid cooling channel; 133c - Liquid inlet channel; 133d - Liquid outlet channel;

[0049] 134 - Magnetohydrodynamic seal;

[0050] 135 - First sealing ring;

[0051] 136 - Magnetofluid sealing cap;

[0052] 137 - Separator;

[0053] 140 - Insulation pad; 140a - Notch;

[0054] 150 - Main frame;

[0055] 200 - Process cavity;

[0056] 300 - End effector;

[0057] X - Vertical direction.

[0058] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0059] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims. Clearly, the described embodiments are only a portion, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0060] With the continuous development of integrated circuit technology, the speed of electronic product upgrades is steadily increasing, and electronic components are gradually developing towards miniaturization, integration, and refinement, which puts forward higher requirements for thin film deposition technology.

[0061] When performing thin film deposition in the deposition process chamber, the entire interior of the process chamber is a vacuum environment. The wafer is placed on the end effector, and the end effector can be operated by the handling device to transfer the wafer to the corresponding position and perform deposition, thereby forming a thin film on the wafer surface.

[0062] It should be noted that the wafer transport device in this application embodiment can transport the wafer to different locations for different processing techniques. Transporting the wafer can help improve the uniformity of the wafer surface treatment.

[0063] During the manufacturing process, the wafer is situated in a vacuum environment within the process chamber. A portion of the transport device is located within this vacuum environment to move the wafer. Therefore, the transport device typically incorporates a sealed structure to prevent air from the external environment from entering the vacuum environment surrounding the wafer and affecting the wafer manufacturing process.

[0064] However, the vacuum environment in which the wafer is located is filled with corrosive gases. In related technologies, these corrosive gases can easily enter the interior of the transport device through the pores between the dynamic structure of the transport device and the process cavity, corroding the sealing structure. Contact between the sealing structure and the corrosive gases can easily affect the sealing effect, leading to seal failure and allowing outside air to enter the vacuum environment in which the wafer is located, thereby affecting the wafer processing technology.

[0065] Based on the aforementioned technical problems, the applicant has improved the structure of existing wafer transfer devices. In this embodiment, a receiving cavity is provided inside the protective cover. The receiving cavity can be filled with inert gas. The inert gas can be used to increase the gas pressure inside the receiving cavity. When the gas pressure inside the receiving cavity is greater than the gas pressure inside the process cavity outside the protective cover, corrosive gases inside the process cavity are less likely to enter the receiving cavity through the mounting holes and diffuse to critical components such as dynamic sealing assemblies, thereby reducing the possibility of corrosive gases affecting the working performance and service life of critical components such as dynamic sealing assemblies.

[0066] It should be noted that the wafer transport device in this application embodiment can transport the wafer to different locations for different processing techniques. Transporting the wafer can help improve the uniformity of the wafer surface treatment.

[0067] The wafer transport device 100 and chemical vapor deposition equipment 10 provided in this application are described below with reference to the accompanying drawings and specific embodiments.

[0068] See Figure 1 and Figure 2 As shown, the wafer transfer device 100 of this application embodiment may include a rotating mechanism 110 and a sealing mechanism 130.

[0069] The rotating mechanism 110 includes a first drive unit 111 and a drive shaft 112. The first drive unit 111 can drive the drive shaft 112 to rotate. The drive shaft 112 may have a support end 112a. The support end 112a of the drive shaft 112 can be used to support a wafer. For example, the support end 112a of the drive shaft 112 may be provided with an end effector 300. The wafer is placed on the end effector 300. When the drive shaft 112 rotates, it can drive the end effector 300 to rotate, so as to adjust the position of the wafer on the horizontal plane.

[0070] In some examples, the wafer transfer device 100 may further include a lifting mechanism 120. The lifting mechanism 120 may be connected to the rotating mechanism 110. The lifting mechanism 120 may include a second drive unit 121. The second drive unit 121 may drive the rotating mechanism 110 to move up and down in the vertical direction X. The second drive unit 121 can drive the rotating mechanism 110 to move up and down to drive the drive shaft 112 to move up and down, so that the wafer on the end effector 300 at the support end 112a of the drive shaft 112 can also move up and down in the vertical direction X to adjust the position of the wafer in the vertical direction X.

[0071] It is easy to understand that when the first drive unit 111 and the second drive unit 121 are running simultaneously, the drive shaft 112 can be raised, lowered and rotated to adjust the position of the wafer within the process cavity 200.

[0072] The sealing mechanism 130 can be located near the support end 112a of the drive shaft 112. The sealing mechanism 130 can be sleeved on the outside of the drive shaft 112. The sealing mechanism 130 includes a protective cover 131 and a dynamic sealing assembly. The dynamic sealing assembly can be sleeved on the outside of the drive shaft 112. The protective cover 131 can be sleeved on the outside of a portion of the dynamic sealing assembly. A receiving cavity 1310 is provided between the inner wall of the protective cover 131 and the dynamic sealing assembly. The receiving cavity 1310 is used to contain inert gas when the wafer transfer device 100 is in operation, such that the gas pressure in the receiving cavity 1310 is greater than the gas pressure in the process cavity 200 outside the protective cover 131.

[0073] The support end 112a of the drive shaft 112 can pass through the mounting hole 131a on the protective cover 131 to support the end effector 300. The wafer is placed on the end effector 300. The wafer, the end effector 300, and part of the outer wall of the protective cover 131 are all located within the process chamber 200. The process chamber 200 is a vacuum environment containing corrosive gases. The drive shaft 112 can rotate about its own axis and can also move up and down in the vertical direction X. Therefore, there is a gap t between the drive shaft 112 and the inner wall of the mounting hole 131a, and the gap t satisfies the rotation and movement of the drive shaft 112 for wafer transfer.

[0074] In this embodiment, by providing an inert gas within the receiving cavity 1310 of the protective cover 131, a slightly positive pressure environment can be formed between the inert gas inside the protective cover 131 and the vacuum environment inside the process chamber 200 outside the protective cover 131. This slightly positive pressure environment refers to a small pressure difference between the gas pressure in the receiving cavity 1310 of the protective cover 131 and the gas pressure inside the process chamber 200 outside the protective cover 131, making it difficult for the gas inside the protective cover 131 and the gas inside the process chamber 200 to diffuse into each other's spaces.

[0075] To reiterate, since the drive shaft 112 can rotate around its own axis and also move up and down in the vertical direction X, the diameter of the mounting hole 131a through which the drive shaft 112 passes is larger than the size of the drive shaft 112. This makes the drive shaft 112 less susceptible to constraint from the inner wall of the mounting hole 131a, thereby enabling the drive shaft 112 to rotate and move in the vertical direction X. In other words, there is a gap t between the inner wall of the mounting hole 131a and the drive shaft 112 to allow for the rotation of the drive shaft 112. The protective cover 131 cannot be sealed to the drive shaft 112. Therefore, the protective cover 131 can prevent most of the gas in the process chamber 200 from entering the receiving chamber 1310. Furthermore, by introducing inert gas into the receiving cavity 1310, a small pressure difference can be formed between the gas pressure in the receiving cavity 1310 inside the protective cover 131 and the gas pressure in the process cavity 200 outside the protective cover 131, so that the gas inside the protective cover 131 and the gas in the process cavity 200 are less likely to diffuse into each other's space.

[0076] Specifically, a slight pressure difference between the inside of the protective cover 131 and the process cavity 200 outside the protective cover 131 makes it difficult for corrosive gases in the process cavity 200 to diffuse into the receiving cavity 1310 of the protective cover 131, thus reducing the possibility of the sealing mechanism 130 failing due to corrosive gases. The slight pressure difference also makes it difficult for inert gases in the protective cover 131 to diffuse into the process cavity 200 through the mounting hole 131a. Alternatively, the slight pressure difference allows a small amount of inert gas to enter the process cavity 200 through the mounting hole 131a, preventing it from further diffusing to the wafer location and affecting the atomic layer deposition process.

[0077] In some examples, the lifting mechanism 120 may include a lead screw assembly 122. The lead screw assembly 122 may include a lead screw 1221 and a lifting nut 1222. The lead screw 1221 is connected to the second drive unit 121. The lifting nut 1222 may be sleeved on the outside of the lead screw 1221 and is connected to the rotating mechanism 110. The lifting nut 1222 and the lead screw 1221 are connected by threads. Therefore, when the second drive unit 121 drives the lead screw 1221 to rotate, the lifting nut 1222 can move along the vertical direction X on the lead screw 1221 to drive the rotating mechanism 110 to rise or fall, thereby enabling the support end 112a of the drive shaft 112 to drive the wafer on the end effector 300 to rise or fall.

[0078] In some examples, the lifting mechanism 120 may also include a guide rail 123 and a slider 124. The guide rail 123 may be disposed on the main frame 150. The guide rail 123 may pass through the slider 124 along the vertical direction X. The slider 124 is connected to the rotating mechanism 110. When the second drive unit 121 drives the lead screw 1221 to rotate so that the lifting nut 1222 rises or falls along the vertical direction X on the lead screw 1221, the slider 124 can slide synchronously on the guide rail 123. The sliding cooperation between the slider 124 and the guide rail 123 can improve the accuracy of the lifting mechanism 120 in the vertical direction X and avoid deviation during the lifting process.

[0079] In some examples, the lifting mechanism 120 may also include a lifting sensor. The lifting sensor may be mounted on the second drive unit 121. For example, the second drive unit 121 may be a motor. The lifting sensor may be mounted on the rotor of the second drive unit 121. When an operator issues a lifting command to the wafer transfer device 100, the second drive unit 121 is activated to generate relative rotation between the lifting nut 1222 and the lead screw 1221, so that the lifting of the lifting nut 1222 drives the drive shaft 112 to lift the wafer.

[0080] For example, the lifting sensor can calculate the rotation between the lifting nut 1222 and the lead screw 1221 by monitoring the rotation of the rotor of the second drive unit 121, thereby calculating the distance the lifting mechanism 120 drives the transmission shaft 112 to rise and fall, and providing feedback. Therefore, after the operator issues a lifting distance command to the lifting mechanism 120, closed-loop control of the lifting motion of the transmission shaft 112 can be achieved through the information fed back by the lifting sensor.

[0081] In some examples, the lifting mechanism 120 may also include a brake. The brake can hold the drive shaft 112 in its current state when it rises or falls to a preset position, thereby providing a stable state for the wafer to improve deposition uniformity. Furthermore, the brake can also provide emergency braking of the drive shaft 112 in the event of an malfunction in the lifting mechanism 120.

[0082] In some examples, the rotation mechanism 110 may include a rotating base 113. The rotating base 113 is connected to the lifting mechanism 120. The first drive unit 111 can drive the rotating base 113 to rotate, thereby rotating the drive shaft 112, which can adjust the position of the wafer on the end effector 300 at the support end 112a of the drive shaft 112 within the process cavity 200. It is readily understood that during the rotation of the rotating base 113, relative rotation may also occur between the slider 124 and the guide rail 123.

[0083] In some examples, the rotating mechanism 110 may also include a rotation sensor. The first drive unit 111 may be a rotary motor. The rotation sensor may be mounted on the rotor of the first drive unit 111. Similar to the working principle of a lifting sensor, the rotation sensor can be used to monitor the rotation of the rotor of the first drive unit 111 to calculate and feed back the rotation angle of the drive shaft 112, thereby achieving closed-loop control of the rotational motion of the drive shaft 112.

[0084] See also some of the possible implementation methods. Figure 1 and Figure 3 As shown, the receiving cavity 1310 is disposed along the vertical direction X between the protective cover 131 and the dynamic sealing assembly. The sealing mechanism 130 may also include a flange 133. The protective cover 131 and the dynamic sealing assembly are disposed on the flange 133. The flange 133 may be provided with an airflow passage 133a. The airflow passage 133a communicates with the receiving cavity 1310.

[0085] In this embodiment, inert gas can be injected into the receiving cavity 1310 through the airflow channel 133a on the flange 133. The flange 133 can be fixed to the main frame 150 of the wafer transfer device 100. Both the dynamic sealing assembly and the protective cover 131 can be fixed to the main frame 150 through the flange 133. Furthermore, since the receiving cavity 1310 refers to the space in the vertical direction X between the protective cover 131 and the dynamic sealing assembly, the receiving cavity 1310 in the vertical direction X can provide movement space for the drive shaft 112 to move up and down in the vertical direction X.

[0086] See also some of the possible implementation methods. Figures 1 to 3 As shown, the dynamic sealing assembly of this application embodiment may include a bellows 132 and a magnetohydrodynamic seal 134. The magnetohydrodynamic seal 134 may be sleeved on the outside of the drive shaft 112. The bellows 132 may be sleeved on the outside of the magnetohydrodynamic seal 134. The magnetohydrodynamic seal 134 is sealingly connected to the drive shaft 112, and the magnetohydrodynamic seal 134 is sealingly connected to the bellows 132.

[0087] In this embodiment, the drive shaft 112 and the inner wall of the bellows 132 can be sealed together by a magnetic fluid seal 134, which confines the magnetic fluid seal 134 between the outer wall of the drive shaft 112 and the inner wall of the bellows 132 by a magnetic field. The magnetic fluid seal 134 can reduce the possibility that outside air will enter the receiving cavity 1310 of the protective cover 131 through the gap between the drive shaft 112 and the bellows 132, and enter the process cavity 200 through the mounting hole 131a of the protective cover 131, thereby affecting the wafer processing process within the process cavity 200.

[0088] In some examples, a sealing ring may be provided between the inner wall of the magnetohydrodynamic seal 134 and the drive shaft 112 along the radial direction of the drive shaft 112 to reduce the possibility of outside air entering the protective cover 131 through the gap between the inner wall of the magnetohydrodynamic seal 134 and the drive shaft 112. A sealing ring may also be provided between the outer wall of the magnetohydrodynamic seal 134 and the inner wall of the bellows 132 to reduce the possibility of outside air entering the protective cover 131 through the gap between the outer wall of the magnetohydrodynamic seal 134 and the inner wall of the bellows 132.

[0089] See in some examples Figure 2 and Figure 3 As shown, the sealing mechanism 130 may further include a magnetofluid sealing cover 136. Along the vertical direction X, the magnetofluid sealing cover 136 may be disposed on the side of the magnetofluid seal 134 near the support end 112a of the drive shaft 112 and connected to the bellows 132. A receiving cavity 1310 along the vertical direction X may be formed between the inner wall of the protective cover 131 and the magnetofluid sealing cover 136.

[0090] See also some of the possible implementation methods. Figure 4 As shown, the flange 133 in this embodiment may also be provided with a liquid cooling channel 133b. The liquid cooling channel 133b may be located close to the magnetohydrodynamic seal 134.

[0091] In this embodiment of the application, the process cavity 200 is a high-temperature environment during wafer processing. When the high temperature inside the process cavity 200 diffuses towards the magnetic fluid seal 134 through the protective cover 131, the liquid cooling channel 133b can be used to reduce the temperature of the magnetic fluid seal 134, making the magnetic fluid seal 134 less susceptible to the effects of high temperature. This reduces the possibility that the magnetic fluid seal 134 being in a high-temperature environment will affect its sealing performance and service life.

[0092] See in some examples Figure 4 As shown, the liquid cooling channel 133b can be annular. The liquid cooling channel 133b surrounds the outer periphery of the magnetohydrodynamic seal 134. The annular liquid cooling channel 133b can have openings at both ends. One end can have a liquid inlet channel 133c, and the other end can have a liquid outlet channel 133d. The liquid inlet channel 133c can have a liquid inlet, and the liquid outlet channel 133d can have a liquid outlet.

[0093] Specifically, coolant can enter the liquid cooling channel 133b through the inlet of the inlet channel 133c. The liquid cooling channel 133b surrounds the magnetic fluid seal 134 to absorb the heat generated by the magnetic fluid seal 134, and is discharged through the outlet of the outlet channel 133d.

[0094] See also some of the possible implementation methods. Figure 3As shown, the bellows 132 in this embodiment may include a first flange seat 1321, a second flange seat 1322, and a pipe body 1323. Along the vertical direction X, the pipe body 1323 may connect the first flange seat 1321 and the second flange seat 1322.

[0095] The first flange seat 1321 can be connected to the rotating mechanism 110, and the second flange seat 1322 is connected to the flange 133. A first gap 100a can exist between the outer wall of the first flange seat 1321 and the inner wall of the protective cover 131. A second gap 100b can exist between the outer wall of the pipe body 1323 and the inner wall of the protective cover 131. The first vent 1322a communicates with the receiving cavity 1310 through the first gap 100a and the second gap 100b.

[0096] In this embodiment, a narrow first gap 100a can be formed between the outer wall of the first flange seat 1321 and the inner wall of the protective cover 131. A narrow second gap 100b can be formed between the outer wall of the pipe body 1323 and the inner wall of the protective cover 131. Inert gas can pass through the airflow channel 133a on the flange 133, through the first gap 100a and the second gap 100b, and enter the receiving cavity 1310.

[0097] In some examples, the drive shaft 112 may generate particles within the receiving cavity 1310 during lifting or rotation. For instance, particles generated by friction between the drive shaft 112 and the inner wall of the mounting hole 131a of the protective cover 131 can easily enter the receiving cavity 1310. The narrow first gap 100a and the narrow second gap 100b prevent particles within the receiving cavity 1310 from moving towards the magnetohydrodynamic seal 134, thereby reducing contamination of the magnetohydrodynamic seal 134 and preventing particles from affecting its sealing performance and service life.

[0098] In some examples, along the vertical direction X, the bottom end of the first flange seat 1321 can be connected to the rotating base 113 of the rotating mechanism 110.

[0099] See also some of the possible implementation methods. Figure 3 As shown, the second flange seat 1322 of this embodiment may be provided with a first vent hole 1322a. The first vent hole 1322a may be connected to the receiving cavity 1310.

[0100] In this embodiment, the inert gas can enter the receiving cavity 1310 through the airflow channel 133a on the flange 133 and the first vent hole 1322a on the second flange seat 1322, and then sequentially through the second gap 100b and the first gap 100a.

[0101] See also some of the possible implementation methods. Figure 3As shown, the protective cover 131 may include a housing 1311 and a connecting seat 1312. Along the vertical direction X, part of the connecting seat 1312 is connected to the second flange seat 1322, and another part of the connecting seat 1312 is connected to the flange 133. The connecting seat 1312 may be provided with a second vent hole 1312a. The second vent hole 1312a communicates with the first vent hole 1322a and the receiving cavity 1310.

[0102] In this embodiment, the inert gas can enter the receiving cavity 1310 through the airflow channel 133a on the flange 133, the first vent hole 1322a on the second flange seat 1322 and the second vent hole 1312a on the connecting seat 1312, and then sequentially through the second gap 100b and the first gap 100a.

[0103] See also some of the possible implementation methods. Figure 3 As shown, the airflow channel 133a may include a first vertical channel 103a, a second vertical channel 103c, and a horizontal channel 103b that are connected to each other. The first vertical channel 103a is provided with an air inlet, and the second vertical channel 103c is provided with an air outlet. The air outlet corresponds to the first vent 1322a of the second flange seat 1322.

[0104] In this embodiment, the inert gas can enter the first vertical channel 103a through the inlet, then flow through the horizontal channel 103b, and then enter the first vent 1322a through the second vertical channel 103c and the outlet. It then enters the receiving cavity 1310 through the second vent 1312a, the second gap, and the first gap.

[0105] In some examples, reference Figure 3 As shown, along the length of the horizontal channel 103b, the distance between the first vertical channel 103a and the second vertical channel 103c can be less than the length of the horizontal channel 103b. Specifically, along the length of the horizontal channel 103b, the first end of the horizontal channel 103b can be located on the side of the first vertical channel 103a away from the second vertical channel 103c, and the second end of the horizontal channel 103b can be located on the side of the second vertical channel 103c away from the first vertical channel 103a.

[0106] After the inert gas enters the horizontal channel 103b through the first vertical channel 103a, it can first flow and fill the first end of the horizontal channel 103b, and then flow towards the second end. After the inert gas fills the second end of the horizontal channel 103b, it flows into the second vertical channel 103c to improve the fluidity of the inert gas in the horizontal channel 103b. This reduces the possibility that the inert gas will block the connection between the first vertical channel 103a and the horizontal channel 103b or the connection between the horizontal channel 103b and the second vertical channel 103c, making it difficult for the inert gas to enter the receiving cavity 1310.

[0107] See also some of the possible implementation methods. Figure 3 As shown, the sealing mechanism 130 of this embodiment may further include a first sealing ring 135. The first sealing ring 135 may be disposed between the mating surfaces of the second flange seat 1322 and the flange 133. Along the radial direction of the drive shaft 112, the first sealing ring 135 is located on the side of the first vent hole 1322a near the drive shaft 112.

[0108] The first sealing ring 135 in this embodiment can be used to prevent outside air from entering the receiving cavity 1310 through the gap between the second flange seat 1322 and the flange 133. Specifically, the area outside the first sealing ring 135 along the radial outward direction of the drive shaft 112 can be the external atmospheric environment. The first sealing ring 135 can prevent outside air from entering the bellows 132.

[0109] See also some of the possible implementation methods. Figure 5 As shown, a partition plate 137 may be provided inside the protective cover 131. Along the vertical direction X, the partition plate 137 can divide the receiving cavity 1310 into a connected primary cavity 131b and a secondary cavity 131c.

[0110] The pressures of the inert gas in the primary chamber 131b, the secondary chamber 131c, and the process chamber 200 can all be different. A slight pressure difference can exist between these chambers to reduce the risk of corrosive gas entering the protective cover 131 and corroding components such as the magnetohydrodynamic seal 134 of the wafer transfer device 100.

[0111] The inert gas can first enter the primary chamber 131b and then diffuse into the secondary chamber 131c. There is a pressure difference between the primary chamber 131b and the secondary chamber 131c. Therefore, during the injection of inert gas, it is not necessary to make the primary chamber 131b and the secondary chamber 131c reach the same pressure, thereby reducing the amount of inert gas injected and reducing energy consumption.

[0112] Furthermore, the partition plate 137 in this embodiment can also be used to improve the isolation effect of corrosive gases. The primary cavity 131b and the secondary cavity 131c can be used to reduce the possibility that corrosive gases continue to flow downwards and come into contact with components such as bearings in the magnetohydrodynamic seal 134 or wafer transfer device, thereby affecting the working performance and service life of the magnetohydrodynamic seal 134 and bearings.

[0113] In some examples, a gap exists between the partition plate 137 and the inner wall of the protective cover 131 along the circumference of the drive shaft 112 to facilitate the diffusion of inert gas from the primary chamber 131b to the secondary chamber 131c.

[0114] See also some of the possible implementation methods. Figure 1 and Figure 6 As shown, the wafer transfer device 100 may further include a heat insulation pad 140. The heat insulation pad 140 may be disposed on the side of the flange 133 facing the support end 112a of the drive shaft 112. Along the radial direction of the drive shaft 112, the outer edge of the heat insulation pad 140 may be provided with a notch 140a. The notch 140a may extend in the direction of the drive shaft 112.

[0115] The heat insulation pad 140 in this embodiment can be used to block the high-temperature environment inside the process chamber 200, reducing the possibility of high temperature inside the process chamber 200 diffusing into the receiving cavity 1310 of the protective cover 131, causing a local temperature drop inside the process chamber 200, and uneven temperature inside the process chamber 200 affecting the uniformity of deposition. Furthermore, the heat insulation pad 140 can also reduce the diffusion of the high-temperature environment inside the process chamber 200 into the receiving cavity 1310, which could affect the working environment of the magnetic fluid seal 134, leading to sealing failure or affecting its service life.

[0116] In this embodiment, the outer edge of the heat insulation pad 140 may be provided with multiple notches 140a to reduce the contact area between the heat insulation pad 140 and the process cavity 200 and reduce heat transfer.

[0117] In some examples, the heat insulation pad 140 may be formed using a high thermal resistance material. Multiple notches 140a are distributed circumferentially along the drive shaft 112 to form a toothed structure in the heat insulation pad 140.

[0118] This application also provides a chemical vapor deposition apparatus 10, see [link to relevant documentation] Figure 7 As shown, the device includes a process chamber 200, an end effector 300, and a wafer transport device 100 as described in any of the above embodiments. The process chamber 200 contains a corrosive gas. The end effector 300 is located within the process chamber 200 and is used to place the wafer. The end effector 300 is disposed at the support end 112a of the drive shaft 112.

[0119] It should be noted that the numerical values ​​and ranges involved in this application are approximate values. Due to the influence of the manufacturing process, there may be a certain range of errors, which can be considered negligible by those skilled in the art.

[0120] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances.

[0121] In the description of this application, it should be understood that the terms “center,” “length,” “width,” “thickness,” “top,” “bottom,” “upper,” “lower,” “left,” “right,” “front,” “rear,” “vertical,” “horizontal,” “inner,” “outer,” “axial,” and “circumferential,” etc., used to indicate orientation or positional relationships are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description, and are not intended to indicate or imply that the indicated position or component must have a specific orientation, or a specific structure and operation, and therefore should not be construed as a limitation of the present invention.

[0122] The devices or elements referred to in the embodiments of this application or implied herein must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the embodiments of this application. In the description of the embodiments of this application, "a plurality of" means two or more, unless otherwise precisely specified.

[0123] The terms "first," "second," "third," "fourth," etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented, for example, in a sequence other than those illustrated or described herein.

[0124] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or apparatus.

[0125] The term "multiple" in this article refers to two or more. The term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. Furthermore, the character " / " in this article generally indicates an "or" relationship between the preceding and following related objects; in formulas, the character " / " indicates a "division" relationship between the preceding and following related objects.

[0126] It is understood that the various numerical designations used in the embodiments of this application are merely for descriptive convenience and are not intended to limit the scope of the embodiments of this application.

[0127] It is understood that, in the embodiments of this application, the order of the above-mentioned process numbers does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

Claims

1. A wafer transport device, characterized in that, include: A rotating mechanism includes a first driving unit and a transmission shaft. The first driving unit drives the transmission shaft to rotate. The transmission shaft has a support end for supporting a wafer. A sealing mechanism is provided near the support end of the drive shaft. The sealing mechanism is sleeved on the outside of the drive shaft. The sealing mechanism includes a protective cover and a dynamic sealing assembly. The dynamic sealing assembly is sleeved on the outside of a portion of the drive shaft. The protective cover is sleeved on the outside of a portion of the dynamic sealing assembly. There is a receiving cavity between the inner wall of the protective cover and the dynamic sealing assembly. The receiving cavity is used to contain inert gas when the wafer transfer device is working, such that the gas pressure in the receiving cavity is greater than the gas pressure in the process cavity outside the protective cover.

2. The wafer transport device according to claim 1, characterized in that, The receiving cavity is arranged vertically between the protective cover and the dynamic sealing assembly. The sealing mechanism also includes a flange, on which the protective cover and the dynamic sealing assembly are disposed. The flange is provided with an airflow channel, which is connected to the receiving cavity.

3. The wafer transport device according to claim 2, characterized in that, The dynamic sealing assembly includes a bellows and a magnetic fluid seal. The magnetic fluid seal is sleeved on the outside of the drive shaft, and the bellows is sleeved on the outside of the magnetic fluid seal. The magnetic fluid seal is sealed to the drive shaft, and the magnetic fluid seal is sealed to the bellows.

4. The wafer transport device according to claim 3, characterized in that, The flange is also provided with a liquid cooling channel, which is located close to the magnetohydrodynamic seal.

5. The wafer transport device according to claim 3 or 4, characterized in that, The corrugated pipe includes a first flange seat, a second flange seat, and a pipe body. Along the vertical direction, the pipe body connects the first flange seat and the second flange seat. The first flange seat is connected to the rotating mechanism, the second flange seat is connected to the flange, there is a first gap between the outer wall of the first flange seat and the inner wall of the protective cover, there is a second gap between the outer wall of the pipe body and the inner wall of the protective cover, and the airflow channel is connected to the first gap, the second gap and the receiving cavity.

6. The wafer transport device according to claim 5, characterized in that, The second flange seat is provided with a first vent hole, which is connected to the receiving cavity through the first gap and the second gap.

7. The wafer transport device according to claim 6, characterized in that, The sealing mechanism further includes a first sealing ring, which is disposed between the surfaces of the second flange seat and the flange that are in contact with each other. Along the radial direction of the drive shaft, the first sealing ring is located on the side of the first vent hole closer to the drive shaft.

8. The wafer transport apparatus according to any one of claims 2 to 4, characterized in that, The protective cover is provided with a partition plate, which divides the receiving cavity into a primary cavity and a secondary cavity that are connected along the vertical direction.

9. The wafer transport apparatus according to any one of claims 2 to 4, characterized in that, It also includes a heat insulation pad, which is disposed on the side of the flange facing the support end of the drive shaft. Along the radial direction of the drive shaft, the outer edge of the heat insulation pad is provided with a notch, which extends toward the drive shaft.

10. A chemical vapor deposition apparatus, characterized in that, include: The process chamber contains corrosive gases; An end effector, located within the process chamber, is used to place a wafer; The wafer transfer device according to any one of claims 1 to 9, wherein the end effector is disposed at the support end of the drive shaft.

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