Semiconductor device
By employing cross-conductivity portions and semiconductor layer structures with different conductivity types in semiconductor devices, and optimizing current control and barrier thickness, the problem of semiconductor devices in the prior art being unable to simultaneously maintain good conduction and cutoff characteristics is solved, achieving the effects of low leakage current and low power consumption.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KK TOSHIBA
- Filing Date
- 2025-07-14
- Publication Date
- 2026-04-17
AI Technical Summary
Existing semiconductor devices struggle to achieve good turn-on characteristics while maintaining good turn-off characteristics, especially due to high leakage current, which leads to high power consumption.
By incorporating a first conductive component in a semiconductor device, including a first conductive portion and a second conductive portion, and a structural design in which the first conductive portion and the second conductive portion intersect, and by combining the layout of semiconductor layers and insulating components of different conductivity types, current control and barrier thickness are optimized to suppress leakage current.
This approach achieves a reduction in leakage current during the cutoff phase while maintaining good conduction characteristics, thereby improving the overall performance of the semiconductor device and reducing power consumption.
Smart Images
Figure CN121888640A_ABST
Abstract
Description
[0001] This application is based on Japanese Patent Application 2024-182107 (filed on October 17, 2024) and claims priority to that application. This application incorporates the entire contents of that application through reference. Technical Field
[0002] Embodiments of the present invention relate to semiconductor devices. Background Technology
[0003] For example, in semiconductor devices, it is desirable to improve performance. Summary of the Invention
[0004] Embodiments of the present invention provide semiconductor devices capable of improving performance.
[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, a semiconductor member, and a first insulating member. A first direction extends from the first electrode to the second electrode. The first conductive member is electrically connected to the second electrode. A second direction extends from the third electrode to at least a portion of the first conductive member, intersecting the first direction. The first conductive member extends along a third direction intersecting a plane including both the first and second directions. The first conductive member includes a first conductive portion and a second conductive portion. A third direction extends from the first conductive portion to the second conductive portion. The second conductive portion includes a first portion. A first distance along the first direction between the first electrode and the first conductive portion is shorter than a second distance along the first direction between the first electrode and the first portion. The semiconductor member is disposed between the first electrode and the second electrode. The semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the same first conductivity type. The first semiconductor layer includes a first portion region and a second portion region. The first portion region is located between the first electrode and the third electrode in the first direction. The second portion region is located between the first electrode and the first conductive component in the first direction. The second portion region is in contact with the first conductive component. At least a portion of the second semiconductor layer is located between the third electrode and the first conductive component in the second direction. The second semiconductor layer is not located between the third electrode and the second conductive component in the second direction. The concentration of a second impurity of the first conductivity type in the second semiconductor layer is higher than the concentration of a first impurity of the first conductivity type in the first semiconductor layer. The first insulating component is disposed between the third electrode and the semiconductor component.
[0006] The semiconductor device based on the above structure can provide a semiconductor device with improved characteristics. Attached Figure Description
[0007] Figure 1 (a) and Figure 1 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0008] Figure 2 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0009] Figure 3 This is a schematic top view illustrating the semiconductor device of the first embodiment.
[0010] Figure 4 (a) and Figure 4 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0011] Figure 5 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0012] Figure 6 (a) and Figure 6 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0013] Figure 7 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0014] Figure 8 (a) and Figure 8 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0015] Figure 9 It is a chart illustrating the characteristics of a semiconductor device.
[0016] (Explanation of reference numerals in the attached image)
[0017] 10, 20: First and second semiconductor layers; 10M: Semiconductor component; 11-13: First to third portion regions; 18A: Cell region; 18B: Termination region; 18R: Outer edge; 20: Second semiconductor layer; 31: First conductive component; 31a: Contact region; 31b: Non-contact region; 31p, 31q: First and second conductive portions; 41: First insulating component; 51-54: First to fourth electrodes; 53A: Other third electrodes; 61: First conductive part; 61L: Wiring; 110-114: Semiconductor device; D1-D3: First-third direction; Dx1: Distance of the first conductive part; L1, L2: Length of the first and second conductive parts; Lp1: Length of the first part; Lz1, Lz2: Length of the first and second parts; P1: Leakage current parameter; R1: Length ratio; d1, d2: Distance of the first and second parts; p1, p2: First and second parts; t1, t2: Thickness of the first and second parts. Detailed Implementation
[0018] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
[0019] The accompanying drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc., may not be the same as in reality. Even when representing the same part, the dimensions and ratios between them may sometimes be shown differently depending on the accompanying drawings.
[0020] In this application specification and figures, the same symbols are used for elements that are the same as those described with respect to the figures that have appeared, and detailed descriptions are omitted where appropriate.
[0021] (First Embodiment)
[0022] Figure 1 (a) and Figure 1 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0023] Figure 2 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0024] Figure 3 This is a schematic top view illustrating the semiconductor device of the first embodiment.
[0025] Figure 1 (a) is Figure 3 Sectional view along lines A1-A2. Figure 1 (b) is Figure 3 Sectional view along lines A3-A4. Figure 2 yes Figure 3 Sectional view along lines B1-B2.
[0026] like Figure 1 of (a) Figure 1 (b) Figure 2 as well as Figure 3 As shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first conductive member 31, a semiconductor member 10M, and a first insulating member 41. The direction from the first electrode 51 to the second electrode 52 is along a first direction D1.
[0027] Let the first direction D1 be the Z-axis direction. Let the direction perpendicular to the Z-axis direction be the X-axis direction. Let the direction perpendicular to both the Z-axis and X-axis directions be the Y-axis direction.
[0028] The first conductive component 31 is electrically connected to the second electrode 52. A second direction D2 from the third electrode 53 toward at least a portion of the first conductive component 31 intersects the first direction D1. The second direction D2 may be, for example, the X-axis direction.
[0029] like Figure 2 As shown, the first conductive component 31 extends along the third direction D3. The third direction D3 intersects a plane that includes the first direction D1 and the second direction D2. The third direction D3 can be, for example, the Y-axis direction.
[0030] The first conductive component 31 includes a first conductive portion 31p and a second conductive portion 31q. The direction from the first conductive portion 31p to the second conductive portion 31q is along a third direction D3.
[0031] like Figure 2 As shown, the second conductive portion 31q includes the first portion p1. Let the distance along the first direction D1 between the first electrode 51 and the first conductive portion 31p be the first distance d1. Let the distance along the first direction D1 between the first electrode 51 and the first portion p1 be the second distance d2. The first distance d1 is shorter than the second distance d2.
[0032] like Figure 1 (a) and Figure 1 As shown in (b), a semiconductor component 10M is disposed between the first electrode 51 and the second electrode 52. The semiconductor component 10M includes a first semiconductor layer 10 of a first conductivity type and a second semiconductor layer 20 of the same first conductivity type. The first semiconductor layer 10 includes a first partial region 11 and a second partial region 12. The first partial region 11 is located between the first electrode 51 and the third electrode 53 in the first direction D1. The second partial region 12 is located between the first electrode 51 and the first conductive component 31 in the first direction D1. The second partial region 12 is connected to the first conductive portion 31p.
[0033] At least a portion of the second semiconductor layer 20 is located between the third electrode 53 and the first conductive portion 31p in the second direction D2. The second semiconductor layer 20 is not located between the third electrode 53 and the second conductive portion 31q in the second direction D2. The concentration of the second impurity of the first conductivity type in the second semiconductor layer 20 is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor layer 10.
[0034] A first insulating member 41 is disposed between the third electrode 53 and the semiconductor component 10M. The first insulating member 41 electrically insulates the third electrode 53 from the semiconductor component 10M. A portion of the first insulating member 41 may be disposed between the third electrode 53 and the second electrode 52. The first insulating member 41 electrically insulates the third electrode 53 from the second electrode 52.
[0035] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 can be a potential referenced to the potential of the second electrode 52. The first electrode 51 functions as a drain electrode, for example. The second electrode 52 functions as a source electrode, for example. The third electrode 53 functions as a gate electrode, for example. The semiconductor device 110 is, for example, a transistor.
[0036] The current flowing between the first electrode 51 and the second electrode 52 can flow through the first conductive member 31. For example, the thickness of the barrier between the semiconductor member 10M and the first conductive member 31 can be controlled by the potential of the third electrode 53. The current control by the potential of the third electrode 53 can be based on the control of the barrier thickness.
[0037] As described above, regions with the second semiconductor layer 20 and regions without the second semiconductor layer 20 are provided. Current control is performed in the regions with the second semiconductor layer 20. For example, the regions with the second semiconductor layer 20 correspond to switching regions. For example, the regions without the second semiconductor layer 20 correspond to non-switching regions.
[0038] In this embodiment, the second distance d2 between the second conductive portion 31q corresponding to the non-switching region and the first electrode 51 is longer than the first distance d1 between the first conductive portion 31p corresponding to the switching region and the first electrode 51. This, for example, suppresses leakage current in the non-switching region. Consequently, power consumption can be reduced. According to this embodiment, a semiconductor device with improved characteristics can be provided.
[0039] In one example of the implementation, the first distance d1 in the switching region can be appropriately set to obtain good characteristics in the conduction characteristics. On the other hand, the second distance d2 in the non-switching region can be appropriately set to obtain good characteristics in the cutoff characteristics (e.g., low leakage current). In this implementation, good cutoff characteristics can be obtained while maintaining good conduction characteristics.
[0040] For example, in a reference example where the first distance d1 and the second distance d2 are the same, it is difficult to obtain good cut-off characteristics while maintaining good conduction characteristics. In an implementation, by making the second distance d2 corresponding to the non-switching region long, for example, it is difficult to form a path for leakage current.
[0041] like Figure 3 As shown, the semiconductor device 10M includes a cell region 18A, a terminal region 18B, and an outer edge 18R. The terminal region 18B is located between the cell region 18A and the outer edge 18R in a direction intersecting the first direction D1. A first conductive portion 31p is provided in the cell region 18A. A second conductive portion 31q is provided in the terminal region 18B. According to an embodiment, for example, leakage current in the terminal region 18B can be reduced.
[0042] like Figure 2 As shown, in this example, the second thickness t2 of the first part p1 in the first direction D1 is thinner than the first thickness t1 of the first conductive part 31p in the first direction D1.
[0043] like Figure 2 As shown, the second thickness t2 can be substantially constant. For example, the second conductive portion 31q can also include a second portion p2. The first portion p1 is located between the first conductive portion 31p and the second portion p2 in the third direction D3. The thickness of the second portion p2 can also vary. The first rate of change of the second thickness t2 relative to its position along the third direction D3 can be lower than the second rate of change of the second portion thickness of the second portion p2 along the first direction D1 relative to its position along the third direction D3. The first distance d1 can be made shorter than the second distance d2 by making the second thickness t2 of the first portion p1 thinner.
[0044] For example, the ratio of the absolute value of the difference between the first thickness t1 and the second thickness t2 to the first thickness t1 can be greater than 0.05 and less than 0.8. This can effectively reduce leakage current.
[0045] In this embodiment, the first thickness t1 can be, for example, 500 nm or more and 1000 nm or less. The second thickness t2 can be, for example, 25 nm or more and 800 nm or less. The first distance d1 can be, for example, 50 μm or more and 500 μm or less. The second distance d2 can be, for example, 49 μm or more and 499 μm or less.
[0046] like Figure 2 As shown, the first part p1 has a first part length Lp1 along the third direction D3. The second conductive part 31q has a second conductive part length L2 along the third direction D3. The first part length Lp1 can be more than 0.5 times the second conductive part length L2. This can effectively reduce leakage current. The first part length Lp1 can be more than 0.8 times the second conductive part length L2.
[0047] like Figure 3 As shown, the length L1 of the first conductive portion 31p in the third direction D3 is longer than the length L2 of the second conductive portion.
[0048] like Figure 2 As shown, in this example, the first part p1 is continuous with the first conductive part 31p. The distance Dx1 between the first electrode 51 and the first conductive part 31 along the first direction D1 can vary in a stepped manner between the first conductive part 31p and the first part p1.
[0049] For example, the first distance d1 and the second distance d2 mentioned above can be obtained by using appropriate mask processing (e.g., etching, etc.).
[0050] like Figure 1 As shown in (a), a portion of the first conductive portion 31p overlaps with the third electrode 53 in the second direction D2. Figure 1 As shown in (b), the second conductive portion 31q may not overlap with the third electrode 53 in the second direction D2.
[0051] The second conductive portion 31q is located in the second direction D2 between a portion of the first semiconductor layer 10 and another portion of the first semiconductor layer 10. The second conductive portion 31q may be part of a trench-type contact region.
[0052] like Figure 1 As shown in (a), the first semiconductor layer 10 may further include a third portion region 13. The third portion region 13 is located between the third electrode 53 and the first conductive member 31 in the second direction D2.
[0053] The second region 12 forms a Schottky contact with the first conductive portion 31p. For example, the thickness of the Schottky barrier can be controlled by the potential of the third electrode 53. The third region 13 can also form a Schottky contact with the first conductive portion 31p.
[0054] Semiconductor component 10M includes, for example, at least one selected from the group consisting of silicon, SiC, GaN, GaO, and GaAs.
[0055] like Figure 1 (a) and Figure 1 As shown in (b), the first conductive component 31 includes a contact region 31a. The contact region 31a is in contact with the second portion region 12. The contact region 31a includes at least one material selected from the group consisting of W, Ni, Co, Pt, Ir, and Au. A Schottky contact can be effectively obtained. The contact region 31a may be in contact with the third portion region 13.
[0056] The first conductive component 31 may include a non-contact region 31b. A contact region 31a is located between the second portion region 12 and the non-contact region 31b. The contact region 31a is located between the third portion region 13 and the non-contact region 31b. The non-contact region 31b includes at least one material selected from the group consisting of Al, Cu, W, Ti, Ni, and Au. For example, the non-contact region 31b may include at least one material selected from the group consisting of AlCu and TiN. Through the non-contact region 31b, for example, a low resistance can be obtained.
[0057] like Figure 1 (a) and Figure 1 As shown in (b), the semiconductor device 110 may further include a first conductive portion 61. The first conductive portion 61 is electrically connected to the second electrode 52. The first conductive portion 61 may be electrically connected to the second electrode 52, for example, via wiring 61L.
[0058] At least a portion of the first conductive portion 61 is located in the first direction D1 (the position of the first conductive portion) between the position of the first electrode 51 in the first direction D1 (the position of the first electrode) and the position of the third electrode 53 in the first direction D1 (the position of the third electrode). A portion of the first insulating member 41 is located between the first conductive portion 61 and the semiconductor member 10M, and between the first conductive portion 61 and the third electrode 53. The first conductive portion 61 suppresses the concentration of the electric field. The first conductive portion 61 functions, for example, as a field plate.
[0059] For example, the first conductive part 61 is located between the first part region 11 and the third electrode 53 in the first direction D1.
[0060] like Figure 1 of (a) Figure 1 (b) and Figure 3 As shown, the semiconductor device 110 may also include a fourth electrode 54. The fourth electrode 54 is disposed in the terminal region 18B. The direction from the fourth electrode 54 to the third electrode 53 intersects the first direction D1.
[0061] For example, multiple third electrodes 53 may be provided. The multiple third electrodes 53 are arranged along the second direction D2. The multiple third electrodes 53 extend along the third direction D3. Multiple first conductive members 31 may be provided. The multiple first conductive members 31 are arranged along the second direction D2. The multiple first conductive members 31 extend along the third direction D3.
[0062] In the semiconductor device 110, one of the plurality of third electrodes 53 is located between one of the plurality of first conductive components 31 and another of the plurality of first conductive components 31.
[0063] Figure 4 (a) and Figure 4 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0064] Figure 5 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0065] Figure 4 (a) is with Figure 3 The sectional view corresponding to line A1-A2. Figure 4 (b) is with Figure 3 The sectional view corresponding to lines A3-A4. Figure 5 Is with Figure 3 The sectional view corresponding to line B1-B2.
[0066] like Figure 4 of (a) Figure 4 (b) and Figure 5 As shown, in the semiconductor device 111 of this embodiment, the second conductive portion 31q does not overlap with the first semiconductor layer 10 in the second direction D2. Otherwise, the structure of the semiconductor device 111 can be the same as that of the semiconductor device 110. In the semiconductor device 111, the first distance d1 is also shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device with improved characteristics can be provided.
[0067] Figure 6 (a) and Figure 6 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0068] Figure 6 (a) is with Figure 3 The sectional view corresponding to line A1-A2. Figure 6 (b) is with Figure 3 The sectional view corresponding to lines A3-A4. For example... Figure 6 (a) and Figure 6 As shown in (b), in the semiconductor device 112 of the embodiment, a portion of the second conductive portion 31q overlaps with the third electrode 53 in the second direction D2. The structure of the semiconductor device 112, otherwise, can be the same as that of the semiconductor device 110. In the semiconductor device 112, the first distance d1 is also shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device capable of improving performance can be provided.
[0069] like Figure 6 As shown in (a), let the length of the portion of the first conductive part 31p that overlaps with the third electrode 53 in the second direction D2 along the first direction D1 be the first length Lz1. Figure 6 As shown in (b), let the length of the portion of the second conductive portion 31q that overlaps with the third electrode 53 in the second direction D2 along the first direction D1 be the second length Lz2. The first length Lz1 is longer than the second length Lz2.
[0070] Figure 7 This is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0071] Figure 7 Is with Figure 3 The sectional view corresponding to line B1-B2. For example... Figure 7 As shown, in the semiconductor device 113 of the embodiment, the second thickness t2 of the first portion p1 in the first direction D1 decreases along the direction from the first conductive portion 31p to the second conductive portion 31q. Otherwise, the structure of the semiconductor device 113 can be the same as that of the semiconductor device 110.
[0072] In at least a portion of the first part p1, the absolute value of the difference between the first thickness t1 and the second thickness t2 is greater than or equal to the first thickness t1. The at least a portion of the first part p1 has a first part length Lp1 along the third direction D3. The second conductive part 31q has a second conductive part length L2 along the third direction D3. The first part length Lp1 is greater than or equal to the second conductive part length L2.
[0073] In the semiconductor device 113 having a first thickness t1 and a second thickness t2, the first distance d1 is also shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device with improved characteristics can be provided.
[0074] Figure 8 (a) and Figure 8 (b) is a schematic cross-sectional view illustrating the semiconductor device of the first embodiment.
[0075] Figure 8 (a) is with Figure 3 The sectional view corresponding to line A1-A2. Figure 8 (b) is with Figure 3 The sectional view corresponding to lines A3-A4.
[0076] like Figure 8 (a) and Figure 8 As shown in (b), the semiconductor device 114 of the embodiment also includes another third electrode 53A. The structure of the semiconductor device 114, other than this, can be the same as that of the semiconductor device 110.
[0077] For example, the third electrode 53 is located between the other third electrodes 53A and the first conductive member 31 in the second direction D2. In the semiconductor device 114, the first distance d1 is also shorter than the second distance d2. For example, leakage current is suppressed. A semiconductor device with improved characteristics can be provided.
[0078] Figure 9 It is a chart illustrating the characteristics of a semiconductor device.
[0079] Figure 9 The simulation results show the characteristics when the second length Lz2 in the semiconductor device 112 is changed. Figure 9 The vertical axis represents the length ratio R1. The length ratio R1 is the ratio of the second length Lz2 to the first length Lz1 (Lz2 / Lz1) (reference). Figure 6 (a) and Figure 6 (b) When the length ratio R1 is 1, the depth of the second conductive portion 31q is the same as the depth of the first conductive portion 31p. The vertical axis represents the leakage current parameter P1. The leakage current parameter P1 is normalized to the leakage current when the length ratio R1 is 1. Preferably, the leakage current parameter P1 is small.
[0080] like Figure 9 As shown, a small leakage current parameter P1 is obtained when the length ratio R1 is 0.8 or less. This change is critical. In the embodiment, it is preferable that the length ratio R1 is 0.625 or less. More preferably, the length ratio R1 is 0.6 or less. The length ratio R1 can be 0 or more.
[0081] In this embodiment, the first conductivity type is either n-type or p-type. For example, the first conductivity type can be n-type. The impurity concentration of the first conductivity type in the first semiconductor layer 10 can be, for example, 1 × 10⁻⁶. 15 cm -3 Above and 1×10 17 cm -3The impurity concentration of the first conductivity type in the second semiconductor layer 20 can, for example, be 1 × 10⁻⁶. 18 cm -3 Above and 1×10 21 cm -3 the following.
[0082] In this embodiment, at least one of the first electrode 51 and the second electrode 52 may comprise a metal. The metal may, for example, comprise at least one element selected from the group consisting of Al, Ti, Ni, Au, Ag, and Cu. At least one of the third electrode 53 and the fourth electrode 54 may comprise polycrystalline silicon.
[0083] In implementation methods, information related to the shape of the nitride region can be obtained, for example, through electron microscope images. Information related to composition and elemental concentration can be obtained, for example, through EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry). For example, information related to composition can be obtained through antilattice space mapping.
[0084] The implementation methods may include the following technical solutions.
[0085] (Technical Solution 1)
[0086] A semiconductor device comprising:
[0087] Electrode 1;
[0088] The second electrode is located along the first direction from the first electrode toward the second electrode;
[0089] Third electrode;
[0090] A first conductive component, electrically connected to the second electrode, extends from the third electrode in a second direction that intersects the first direction at least a portion thereof. The first conductive component extends along a third direction that intersects a plane including the first and second directions. The first conductive component includes a first conductive portion and a second conductive portion. The direction from the first conductive portion to the second conductive portion is along the third direction. The second conductive portion includes the first portion. A first distance along the first direction between the first electrode and the first conductive portion is shorter than a second distance along the first direction between the first electrode and the first portion.
[0091] A semiconductor device is disposed between a first electrode and a second electrode. The semiconductor device includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the same first conductivity type. The first semiconductor layer includes a first portion region and a second portion region. The first portion region is located between the first electrode and a third electrode in a first direction. The second portion region is located between the first electrode and the first conductive component in the first direction and is in contact with the first conductive portion. At least a portion of the second semiconductor layer is located between the third electrode and the first conductive portion in a second direction. The second semiconductor layer is not located between the third electrode and the second conductive portion in the second direction. The concentration of a second impurity of the first conductivity type in the second semiconductor layer is higher than the concentration of a first impurity of the first conductivity type in the first semiconductor layer.
[0092] The first insulating component is disposed between the third electrode and the semiconductor component.
[0093] (Technical Solution 2)
[0094] According to the semiconductor device of technical solution 1, the semiconductor component includes a unit region, a terminal region, and an outer edge.
[0095] The terminal region is located between the unit region and the outer edge in a direction intersecting the first direction.
[0096] The first conductive portion is disposed in the unit region.
[0097] The second conductive portion is disposed in the terminal region.
[0098] (Technical Solution 3)
[0099] According to the semiconductor device of technical solution 1 or 2, the second thickness of the first portion in the first direction is thinner than the first thickness of the first conductive portion in the first direction.
[0100] (Technical Solution 4)
[0101] According to the semiconductor device of technical solution 3, the second conductive portion further includes a second portion.
[0102] The first part is located between the first conductive part and the second part in the third direction.
[0103] The first rate of change of the second thickness relative to the position along the third direction is lower than the second rate of change of the thickness of the second portion along the first direction relative to the position along the third direction.
[0104] (Technical Solution 5)
[0105] According to the semiconductor device of technical solution 3, the second thickness is substantially constant.
[0106] (Technical Solution 6)
[0107] The semiconductor device according to any one of technical solutions 3-5, wherein the absolute value of the difference between the first thickness and the second thickness is greater than or equal to 0.05 and less than or equal to 0.8 relative to the first thickness.
[0108] (Technical Solution 7)
[0109] The semiconductor device according to any one of technical solutions 3-6, wherein the first portion has a length of the first portion along the third direction.
[0110] The second conductive portion has a length along the third direction.
[0111] The length of the first part is more than 0.5 times the length of the second conductive part.
[0112] (Technical Solution 8)
[0113] According to the semiconductor device of technical solution 7, the length of the first conductive portion in the third direction is longer than the length of the second conductive portion.
[0114] (Technical Solution 9)
[0115] According to the semiconductor device of technical solution 3, the second thickness decreases along the direction from the first conductive portion to the second conductive portion.
[0116] In at least a portion of the first part, the absolute value of the difference between the first thickness and the second thickness is greater than or equal to the first thickness, in a ratio of 0.1.
[0117] The first part, at least a portion thereof, has a length of the first part along the third direction.
[0118] The second conductive portion has a length along the third direction.
[0119] The length of the first part is more than 0.5 times the length of the second conductive part.
[0120] (Technical Solution 10)
[0121] The semiconductor device according to any one of technical solutions 3-9, wherein the first portion is continuous with the first conductive portion.
[0122] The distance between the first electrode and the first conductive component along the first direction varies in a stepped manner between the first conductive portion and the first portion.
[0123] (Technical Solution 11)
[0124] The semiconductor device according to any one of technical solutions 1-10, wherein the second conductive portion does not overlap with the third electrode in the second direction.
[0125] (Technical Solution 12)
[0126] The semiconductor device according to any one of technical solutions 1-10, wherein the second conductive portion is located in the second direction between a portion of the first semiconductor layer and another portion of the first semiconductor layer.
[0127] (Technical Solution 13)
[0128] The semiconductor device according to any one of technical solutions 1-10, wherein the second conductive portion does not overlap with the first semiconductor layer in the second direction.
[0129] (Technical Solution 14)
[0130] The semiconductor device according to any one of technical solutions 1-13, wherein the second portion region forms a Schottky contact with the first conductive portion.
[0131] (Technical Solution 15)
[0132] The semiconductor device according to any one of technical solutions 1-14, wherein the semiconductor component comprises at least one selected from the group consisting of silicon, SiC, GaN, GaO and GaAs.
[0133] (Technical Solution 16)
[0134] According to the semiconductor device of technical solution 15, the first conductive component includes a contact region.
[0135] The contact area is connected to the second part of the region, and the contact area includes at least one of the following: W, Ni, Co, Pt, Ir, and Au.
[0136] (Technical Solution 17)
[0137] According to the semiconductor device of technical solution 16, the first conductive component includes a non-contact region.
[0138] The contact area is located between the second part of the region and the non-contact area.
[0139] The non-contact region comprises at least one element selected from the group consisting of Al, Cu, W, Ti, Ni, and Au.
[0140] (Technical Solution 18)
[0141] The semiconductor device according to any one of technical solutions 1-17, wherein the third electrode extends along the third direction.
[0142] (Technical Solution 19)
[0143] The semiconductor device according to any one of technical solutions 1-18 further includes a first conductive portion electrically connected to the second electrode.
[0144] At least a portion of the first conductive portion is located at a position in the first direction between the position of the first electrode in the first direction and the position of the third electrode in the first direction.
[0145] A portion of the first insulating component is located between the first conductive portion and the semiconductor component, and between the first conductive portion and the third electrode.
[0146] (Technical Solution 20)
[0147] The semiconductor device according to any one of technical solutions 1-19, wherein the ratio of the second length to the first length is 0.625 or less.
[0148] The first length is the length of the portion of the first conductive part that overlaps with the third electrode in the second direction along the first direction.
[0149] The second length is the length of the portion of the second conductive part that overlaps with the third electrode in the second direction along the first direction.
[0150] According to the implementation method, a semiconductor device capable of improving characteristics is provided.
[0151] The embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, any specific configuration of the elements such as electrodes, conductive parts, semiconductor components, semiconductor regions, conductive components, and insulating components included in a semiconductor device is included within the scope of the present invention, provided that a person skilled in the art can obtain the same effect by appropriately selecting from the known scope and similarly implementing the present invention.
[0152] Any solution obtained by combining any two or more elements of each example within the scope of technical feasibility, as long as it contains the spirit of the present invention, is also included within the scope of the present invention.
[0153] Based on the semiconductor device described above as an embodiment of the present invention, all semiconductor devices that can be implemented by those skilled in the art through appropriate design modifications, as long as they contain the spirit of the present invention, are also within the scope of the present invention.
[0154] It should be understood that those skilled in the art can conceive of various modifications and alterations within the scope of the present invention, and that such modifications and alterations also fall within the scope of the present invention.
[0155] While several embodiments of the invention have been described, these embodiments are provided by way of example and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention, and are included within the scope of the invention as set forth in the claims and its equivalents.
Claims
1. A semiconductor device comprising: Electrode 1; The second electrode is located along the first direction from the first electrode to the second electrode; Third electrode; A first conductive component, electrically connected to the second electrode, extends from the third electrode in a second direction that intersects the first direction at least a portion thereof. The first conductive component extends along a third direction that intersects a plane including the first and second directions. The first conductive component includes a first conductive portion and a second conductive portion. The direction from the first conductive portion to the second conductive portion is along the third direction. The second conductive portion includes the first portion. A first distance along the first direction between the first electrode and the first conductive portion is shorter than a second distance along the first direction between the first electrode and the first portion. A semiconductor component is disposed between a first electrode and a second electrode. The semiconductor component includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the same first conductivity type. The first semiconductor layer includes a first portion region and a second portion region. The first portion region is located between the first electrode and a third electrode in a first direction. The second portion region is located between the first electrode and the first conductive component in the first direction and is in contact with the first conductive portion. At least a portion of the second semiconductor layer is located between the third electrode and the first conductive portion in a second direction. The second semiconductor layer is not disposed between the third electrode and the second conductive portion in the second direction. The concentration of a second impurity of the first conductivity type in the second semiconductor layer is higher than the concentration of a first impurity of the first conductivity type in the first semiconductor layer. as well as The first insulating component is disposed between the third electrode and the semiconductor component.
2. The semiconductor device according to claim 1, wherein, The semiconductor component includes a cell region, a terminal region, and an outer edge. The terminal region is located between the unit region and the outer edge in a direction intersecting the first direction. The first conductive portion is disposed in the unit region. The second conductive portion is disposed in the terminal region.
3. The semiconductor device according to claim 1, wherein, The second thickness of the first portion in the first direction is thinner than the first thickness of the first conductive portion in the first direction.
4. The semiconductor device according to claim 3, wherein, The second conductive portion further includes a second portion. The first part is located between the first conductive part and the second part in the third direction. The first rate of change of the second thickness relative to the position along the third direction is lower than the second rate of change of the thickness of the second portion along the first direction relative to the position along the third direction.
5. The semiconductor device according to claim 3, wherein, The length of the first conductive portion in the third direction is longer than the length of the second conductive portion in the third direction.
6. The semiconductor device according to claim 1, wherein, The second conductive portion does not overlap with the third electrode in the second direction.
7. The semiconductor device according to claim 1, wherein, The second conductive portion is located in the second direction between a portion of the first semiconductor layer and another portion of the first semiconductor layer.
8. The semiconductor device according to claim 1, wherein, The second conductive portion does not overlap with the first semiconductor layer in the second direction.
9. The semiconductor device according to claim 1, wherein, The semiconductor component comprises at least one selected from the group consisting of silicon, SiC, GaN, GaO, and GaAs. The first conductive component includes a contact area. The contact area is connected to the second part of the region, and the contact area includes at least one of the following: W, Ni, Co, Pt, Ir, and Au.
10. The semiconductor device according to claim 1, wherein, The ratio of the second length to the first length is less than 0.
625. The first length is the length of the portion of the first conductive part that overlaps with the third electrode in the second direction along the first direction. The second length is the length of the portion of the second conductive portion that overlaps with the third electrode in the second direction along the first direction.