Display substrate and display device

Abstract

The invention relates to a display substrate and display equipment, the display equipment comprises a micro light-emitting diode, the micro light-emitting diode comprises a driving substrate, a first bonding assembly, a second bonding assembly and an anode conductive structure, and an anode contact is arranged on the surface of one side of the driving substrate; the first bonding assembly is located on the surface of the driving substrate and comprises a first bonding piece and an anode auxiliary chip located on the side, away from the driving substrate, of the first bonding piece, and the first bonding piece makes contact with the anode contact; the second bonding assembly is located on the side, away from the driving substrate, of the first bonding assembly and comprises a second bonding piece and a first light-emitting chip located on the side, away from the driving substrate, of the second bonding piece, and the second bonding piece is connected with the anode of the first light-emitting chip; and the anode conductive structure is respectively connected with the second bonding piece and the first bonding piece. The yield and the stability of the display equipment are improved while normal functions of the display equipment are ensured.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display substrate and a display device. Background Technology

[0002] Micro-LEDs (Micro Light Emitting Diode Displays) have advantages such as high efficiency, low power consumption, high density, and high stability, and are considered one of the most promising next-generation display and light-emitting devices.

[0003] In typical multilayer stacked microlight-emitting diodes (LEDs), the upper pixel structure usually needs to be connected to the anode of the driving wafer via an anode connector located in the lower pixel structure. However, when an auxiliary chip is located in the lower pixel structure between the upper pixel structure and the driving wafer, the anode connector needs to penetrate both the lower pixel structure and the auxiliary chip. This increases the manufacturing difficulty of the anode connector, increases the process complexity of the microlight-emitting diode, and in severe cases, may even lead to a decrease in the yield of the microlight-emitting diode. Summary of the Invention

[0004] Therefore, it is necessary to provide a display substrate and display device to reduce the process complexity of micro light-emitting diodes and improve the yield and stability of micro light-emitting diodes.

[0005] This application provides a display substrate, including a micro light-emitting diode, wherein the micro light-emitting diode includes:

[0006] A driving substrate, wherein an anode contact is provided on one side surface of the driving substrate;

[0007] A first bonding assembly is located on the surface of the driving substrate. The first bonding assembly includes a first bonding member and an anode auxiliary chip located on the side of the first bonding member away from the driving substrate. The first bonding member is in contact with the anode contact.

[0008] The second bonding assembly is located on the side of the first bonding assembly away from the driving substrate. The second bonding assembly includes a second bonding member and a first light-emitting chip located on the side of the second bonding member away from the driving substrate. The second bonding member is connected to the anode of the first light-emitting chip.

[0009] The anode conductive structure is connected to both the second bonding member and the first bonding member.

[0010] In one embodiment, the micro-light-emitting diode further includes:

[0011] A first insulating layer at least covers the anode auxiliary chip;

[0012] The anode conductive structure includes:

[0013] An anode conductive layer is located on the side of the first insulating layer away from the anode auxiliary chip and is connected to the first bonding member;

[0014] An anode connector is located on the side of the anode conductive layer away from the first insulating layer and is connected to both the anode conductive layer and the second bonding member.

[0015] In one embodiment, the anode conductive layer includes at least one of a transparent conductive layer and a conductive reinforcement; wherein,

[0016] In the case where the anode conductive layer includes the transparent conductive layer and the conductive reinforcement, the transparent conductive layer is located on the side of the first insulating layer away from the anode auxiliary chip, the conductive reinforcement is located on the side of the transparent conductive layer away from the first insulating layer, and the conductive reinforcement at least covers the surface of the portion of the transparent conductive layer connected to the first bonding member.

[0017] In one embodiment, the driving substrate further includes a cathode contact, which is located on the same side of the driving substrate as the anode contact, and the cathode contact and the anode contact are isolated from each other;

[0018] The micro light-emitting diode also includes:

[0019] The third bonding assembly is located on the surface of the driving substrate and on the same side as the first bonding assembly. The third bonding assembly includes a third bonding member and a cathode auxiliary chip located on the side of the third bonding member away from the driving substrate. The third bonding member is in contact with the cathode contact.

[0020] The cathode conductive structure is connected to the cathode of the third bonding member and the cathode of the first light-emitting chip, respectively.

[0021] In one embodiment, the micro-light-emitting diode further includes:

[0022] A second insulating layer at least covers the cathode auxiliary chip;

[0023] The cathode conductive structure includes:

[0024] A cathode conductive layer is located on the side of the second insulating layer away from the cathode auxiliary chip and is connected to the third bonding member;

[0025] A cathode connector is located on the side of the cathode conductive layer away from the second insulating layer, and is connected to both the cathode conductive layer and the cathode of the first light-emitting chip.

[0026] In one embodiment, the micro-light-emitting diode further includes:

[0027] A third insulating layer, at least covering the second bonding assembly, is located on the side of the anode conductive structure and the cathode conductive structure away from the driving substrate. The third insulating layer includes a first opening exposing the cathode of the first light-emitting chip, and the orthographic projection of the third insulating layer toward the driving substrate is separate from the orthographic projection of the cathode conductive structure toward the driving substrate.

[0028] A cathode connection layer is located on the side of the third insulating layer away from the second bonding component. The cathode connection layer extends into the first opening and is connected to the cathode of the cathode connector and the cathode of the first light-emitting chip, respectively.

[0029] In one embodiment, the micro-light-emitting diode further includes:

[0030] A first pixel layer is located on the surface of the driving substrate. The first bonding component and the anode conductive structure are both located within the first pixel layer. The first pixel layer also includes a first dielectric layer, which is located on the side of the first bonding component and the anode conductive structure away from the driving substrate.

[0031] The second pixel layer is located on the side of the first pixel layer away from the driving substrate. The second bonding assembly is located within the second pixel layer. The second pixel layer also includes a second dielectric layer, which is located on the side of the second bonding assembly away from the first pixel layer.

[0032] In one embodiment, at least two first pixel layers are disposed between the driving substrate and the second pixel layer, and in two adjacent first pixel layers, the anodic conductive structure in the first pixel layer closer to the driving substrate is connected to the first bonding member in the first pixel layer farther from the driving substrate.

[0033] In one embodiment, the drive substrate includes at least two of the anode contacts;

[0034] The first pixel layer is further provided with a fourth bonding component, which includes a fifth bonding member and a second light-emitting chip located on the side of the fifth bonding member away from the driving substrate. The fifth bonding member and the first bonding member respectively contact different anode contacts, and the fifth bonding member is connected to the anode of the second light-emitting chip.

[0035] Accordingly, this application also provides a display device, the display device including a projection module, the projection module including the display substrate as described above.

[0036] The display substrate and display device described above, by providing a first bonding assembly for connecting anode contacts on the surface of a driving substrate, and providing a second bonding assembly on the side of the first bonding assembly away from the driving substrate, and using an anode conductive structure to connect the first bonding bond in the first bonding assembly and the second bonding member in the second bonding assembly respectively, wherein the anode conductive structure is connected to the first bonding member by an anode conductive layer covering the anode auxiliary chip, and the anode conductive layer is connected by an anode connector located between the anode auxiliary chip and the second bonding member; compared with the interconnect structure that only uses electrical connectors to achieve electrical connection between different film layers, this application, by providing an anode conductive structure, achieves electrical connection between the first bonding assembly and the second bonding assembly while reducing the height of the anode connector and reducing the manufacturing difficulty of the anode connector, thereby helping to improve the yield and production rate of micro light-emitting diodes. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a schematic diagram of the structure of a micro light-emitting diode in a display substrate provided in one embodiment of this application.

[0039] Figure 2 This is a partially enlarged structural diagram showing the location of the anode auxiliary chip and the first light-emitting chip in a display substrate provided in one embodiment of this application.

[0040] Figure 3 This is a schematic diagram of the structure of a display substrate provided in one embodiment of the present application, where the conductive reinforcement covers the portion of the transparent conductive layer away from the first bonding member.

[0041] Figure 4 This is a schematic diagram of the structure of a display substrate provided in one embodiment of the present application, showing the portion of the transparent conductive layer covered by the conductive reinforcement member that is away from the first bonding component.

[0042] Figure 5 This is a schematic diagram of the structure corresponding to the case where the anode conductive layer of the display substrate is a conductive enhancement element in one embodiment of this application.

[0043] Figure 6 This is a schematic diagram of the structure corresponding to the case where two first pixel layers are disposed between the driving substrate and the second pixel layer in a display substrate provided in one embodiment of this application.

[0044] Figure 7 This is a schematic diagram of the structure of a display substrate in which the micro-light-emitting diode includes a microlens, according to one embodiment of this application.

[0045] Figure 8 This is a schematic diagram of the structure of a display substrate in one embodiment of the present application, where the micro-light-emitting diodes include a quantum dot layer.

[0046] Figure 9 This is a schematic diagram of the structure of a projection module in a display device provided in one embodiment of the present application, which includes a bandpass filter film.

[0047] Figure 10 This is a schematic diagram of the structure of a projection module in a display device provided in one embodiment of the present application, which includes a reverse filter film.

[0048] Figure 11 This is a schematic diagram of the structure of a projection module in a display device provided in one embodiment of the present application, which includes a third display device.

[0049] Figure 12 This is a schematic diagram of the structure corresponding to the arrangement of four prisms along the optical axis of the optical system in a display device provided in one embodiment of this application.

[0050] Figure 13 This is a schematic diagram of the structure of a display device provided in one embodiment of the present application, where the light-combining prism includes a first prism and a second prism, and red and blue light undergo total internal reflection.

[0051] Figure 14 This is a schematic diagram of the structure of a display device provided in one embodiment of the present application, where the light-combining prism includes a first prism and a second prism, and red and green light undergo total internal reflection.

[0052] Figure 15 This is a schematic diagram of the structure of a display device provided in one embodiment of this application, where an air gap is provided inside the light-combining prism and the first display device emits red and green light.

[0053] Figure 16 This is a schematic diagram of the structure of a display device provided in one embodiment of this application, where an air gap is provided inside the light-combining prism and the first display device emits red and blue light.

[0054] The reference numerals in the accompanying drawings include: 100-driving substrate; 101-anode contact; 102-cathode contact; 110-first bonding assembly; 111-first bonding member; 112-anode auxiliary chip; 120-second bonding assembly; 121-second bonding member; 122-first light-emitting chip; 130-anode conductive structure; 131-anode conductive layer; 131a-transparent conductive layer; 131b-conductive enhancement member; 132-anode connector; 140-first insulating layer; 141-second insulating layer; 142-third insulating layer; 142a-first opening; 150-third bonding assembly; 151-third bonding member; 152-cathode auxiliary chip; 160-cathode conductive structure; 161-cathode conductive layer; 162-cathode connector; 170-cathode Connecting layer; 171-Fourth bonding component; 172-Common cathode reinforcement component; 180-First dielectric layer; 181-Second dielectric layer; 190-Fourth bonding assembly; 191-Fifth bonding component; 192-Second light-emitting chip; 192a-Second opening; P1-First pixel layer; P2-Second pixel layer; A-Microlens; B-Quantum dot layer; 200-Projection module; 210-First display device; 220-Second display device; 230-Light combining prism; 231-Prismatic prism; 232-Bandpass filter film; 233-Bandback filter film; 234-Short-wave pass filter film; 235-First filter film; 236-Second filter film; 237-First prism; 238-Second prism; 239-Filter film; 240-Optical system; 250-Third display device. Detailed Implementation

[0055] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0057] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, parts, regions, layers, doping types, and / or portions, these elements, parts, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, part, region, layer, doping type, or portion from another element, part, region, layer, doping type, or portion. Therefore, without departing from the teachings of this application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0058] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as “below,” “under,” or “below” will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.

[0059] When used herein, the singular forms of “a,” “an,” and “ / the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, in this specification, the term “and / or” includes any and all combinations of the associated listed items.

[0060] Figure 1 This is a schematic diagram of the structure of a micro light-emitting diode in a display device provided in one embodiment of this application. (See also...) Figure 1 One embodiment of this application provides a display device including a micro light-emitting diode (LED), and the micro LED includes a driving substrate 100, a first bonding assembly 110, a second bonding assembly 120, and an anode conductive structure 130. An anode contact 101 is provided on one side surface of the driving substrate 100. The first bonding assembly 110 is located on the surface of the driving substrate 100 and includes a first bonding member 111 and an anode auxiliary chip 112 located on the side of the first bonding member 111 away from the driving substrate 100. The first bonding member 111 is in contact with the anode contact 101. The second bonding assembly 120 is located on the side of the first bonding assembly 110 away from the driving substrate 100 and includes a second bonding member 121 and a first light-emitting chip 122 located on the side of the second bonding member 121 away from the driving substrate 100. The second bonding member 121 is anode-connected to the first light-emitting chip 122. The anode conductive structure 130 is connected to both the second bonding member 121 and the first bonding member 111.

[0061] It should be noted that in a typical micro LED, the first light-emitting chip needs to be connected to the anode contact in the driving substrate through at least one through-hole electrical connector, and each electrical connector is located within one of the film layers between the first light-emitting chip and the driving substrate. However, when the film layer containing the electrical connector is thick, or when the semiconductor structure between the first light-emitting chip and the driving substrate is complex, the fabrication process of the electrical connector becomes more complex and difficult, negatively impacting the yield of the micro LED, and in severe cases, even affecting the normal operation of the display substrate.

[0062] As described above, the display substrate has a first bonding assembly for connecting anode contacts on the surface of the driving substrate, and a second bonding assembly on the side of the first bonding assembly away from the driving substrate. The first bonding bond in the first bonding assembly and the second bonding member in the second bonding assembly are connected by an anode conductive structure. This reduces the height of the anode connector in the anode conductive structure, thereby reducing the process complexity and difficulty of the anode connector. This is beneficial to improving the yield and production rate of micro LEDs, and thus to improving the yield and stability of the display substrate.

[0063] In one embodiment, the driving substrate 100 is internally provided with a driving circuit for controlling the first light-emitting chip 122 to emit light. Optionally, the driving substrate 100 can be a CMOS driving wafer.

[0064] In one embodiment, a plurality of anode contacts 101 are spaced apart in the driving substrate 100, and each anode contact 101 is used to connect to the anode of one of the first light-emitting chips 122 in the micro light-emitting diode, so as to realize the light-emitting function of different first light-emitting chips 122 in the micro light-emitting diode.

[0065] In one embodiment, the driving substrate 100 further includes a cathode contact 102 for connecting to the cathode of the first light-emitting chip 122, so as to realize the light-emitting function of different first light-emitting chips in the micro light-emitting diode; the cathode contact 102 is located on the side of the driving substrate 100 where the anode contact 101 is disposed, and the cathode contact 102 and the anode contact 101 are isolated from each other. Optionally, the cathode contact 102 is located on the same side as all the anode contacts 101, so as to connect to the cathode of all the first light-emitting chips 122.

[0066] See Figure 1 and Figure 2 In one embodiment, the micro-LED further includes a first insulating layer 140, which at least covers the anode auxiliary chip 112. Optionally, when the cross-sectional width of the first bonding member 111 is greater than the cross-sectional width of the anode auxiliary chip 112, a portion of the surface of the first bonding member 111 away from the driving substrate 100 is not covered by the anode auxiliary chip 112, while the first insulating layer 140 covers the surface of the anode auxiliary chip 112 away from the driving substrate 100, and also covers a portion of the surface and sidewalls of the first bonding member 111, to achieve electrical isolation of the anode auxiliary chip 112.

[0067] In one embodiment, when the micro-LED includes a first insulating layer 140, the anode conductive structure 130 includes an anode conductive layer 131 and an anode connector 132; wherein, the anode conductive layer 131 is located on the side of the first insulating layer 140 away from the anode auxiliary chip 112 and is connected to the first bonding member 111 (i.e., the anode conductive layer 131 is connected to the surface of the portion of the first bonding member 111 not covered by the first insulating layer 140); the anode connector 132 is located on the side of the anode conductive layer 131 away from the first insulating layer 140 and is connected to the anode conductive layer 131 and the second bonding member 121 respectively.

[0068] It should be noted that in the micro-light-emitting diode described above, the first bonding member 111, the anode conductive layer 131, the anode connector 132, and the second bonding member 121 constitute a continuous conductive path. This conductive path is used to realize the electrical connection between the anode contact 101 and the anode of the first light-emitting chip 122, thereby helping to realize the light-emitting function of the first light-emitting chip 122. At the same time, compared with the method of using only electrical connectors to connect the anode contact and the anode of the first light-emitting chip, using the conductive path surrounding the anode auxiliary chip 112 to realize the electrical connection between the anode contact 101 and the anode of the first light-emitting chip 122 is beneficial to reducing the cross-sectional height of the anode connector 132, thereby helping to reduce the manufacturing difficulty of the anode connector 132 and improve the yield and morphological stability of the anode connector 132.

[0069] In one embodiment, the micro-light-emitting diode further includes a third bonding component 150 and a cathode conductive structure 160; wherein, the third bonding component 150 is located on the surface of the driving substrate 100 and on the same side as the first bonding component 110, the third bonding component 150 includes a third bonding member 151 and a cathode auxiliary chip 152 located on the side of the third bonding member 151 away from the driving substrate 100, the third bonding member 151 is in contact with the cathode contact 102; the cathode conductive structure 160 is connected to the cathode of the third bonding member 151 and the first light-emitting chip 122 respectively.

[0070] In one embodiment, the micro-light-emitting diode further includes a second insulating layer 141, which at least covers the cathode auxiliary chip 152. Optionally, if the cross-sectional width of the third bonding member 151 is greater than the cross-sectional width of the cathode auxiliary chip 152, a portion of the surface of the third bonding member 151 away from the driving substrate 100 is not covered by the cathode auxiliary chip 152, while the second insulating layer 141 covers the surface of the cathode auxiliary chip 152 away from the driving substrate 100, and also covers a portion of the surface and sidewalls of the third bonding member 151, to achieve electrical isolation of the cathode auxiliary chip 152.

[0071] When the micro-light-emitting diode includes a second insulating layer 141, the cathode conductive structure 160 includes a cathode conductive layer 161 and a cathode connector 162; wherein, the cathode conductive layer 161 is located on the side of the second insulating layer 141 away from the cathode auxiliary chip 152 and is connected to the third bonding member 151; the cathode connector 162 is located on the side of the cathode conductive layer 161 away from the second insulating layer 141 and is connected to the cathode of the cathode conductive layer 161 and the cathode of the first light-emitting chip 122, respectively. Optionally, the first insulating layer 140 and the second insulating layer 141 can be the same insulating layer.

[0072] In one embodiment, the micro-light-emitting diode further includes a third insulating layer 142 and a cathode connection layer 170; wherein, the third insulating layer 142 at least covers the second bonding assembly 120 and is located on the side of the anode conductive structure 130 and the cathode conductive structure 160 away from the driving substrate 100, the third insulating layer 142 includes a first opening 142a exposing the cathode of the first light-emitting chip 122, and the orthographic projection of the third insulating layer 142 toward the driving substrate 100 is separated from the orthographic projection of the cathode conductive structure 160 toward the driving substrate 100; the cathode connection layer 170 is located on the side of the third insulating layer 142 away from the second bonding assembly 120, the cathode connection layer 170 extends into the first opening 142a, and the cathode connection layer 170 is connected to the cathode connector 162 and the cathode of the first light-emitting chip 122 respectively, so as to realize the function of the driving substrate 100 controlling the first light-emitting chip 122 to emit light.

[0073] It should be noted that in the micro-light-emitting diode described above, the third bonding member 151, the cathode conductive layer 161, the cathode connector 162, and the cathode connection layer 170 constitute a continuous conductive path. This conductive path is used to realize the electrical connection between the cathode contact 102 and the cathode of the first light-emitting chip 122, thereby helping to realize the light-emitting function of the first light-emitting chip 122. At the same time, compared with the method of using only electrical connectors to connect the cathode contact and the cathode of the first light-emitting chip, using the conductive path arranged around the cathode auxiliary chip 152 to realize the electrical connection between the cathode contact 102 and the cathode of the first light-emitting chip 122 is beneficial to reduce the cross-sectional height of the cathode connector 162, thereby helping to reduce the manufacturing difficulty of the cathode connector 162 and improve the yield and morphological stability of the cathode connector 162.

[0074] In one embodiment, the micro-light-emitting diode further includes a fourth bonding member 171 and a common cathode reinforcement member 172. The fourth bonding member 171 is located on the side of the cathode connector 162 away from the cathode conductive layer 161. The common cathode reinforcement member 172 covers the surface of the fourth bonding member 171 away from the cathode connector 162, and also covers the cathode connector layer 170, thereby realizing the electrical connection between the cathode connector layer 170, the common cathode reinforcement member 172, and the fourth bonding member 171. Optionally, in the cathode connector layers 170 on both sides of the first light-emitting chip 122, a common cathode reinforcement member 172 is also provided on the surface away from the driving substrate 100 to enhance the cathode current.

[0075] In one embodiment, the common cathode reinforcement 172 is made of one or more of aluminum (Al), gold (Au), copper (Cu), nickel (Ni), tin (Sn), chromium (Cr), platinum (Pt), and titanium (Ti) to enhance the cathode current.

[0076] In one embodiment, the materials of the first bonding member 111, the second bonding member 121, the third bonding member 151, and the fourth bonding member 171 all include one or more combinations of aluminum (Al), gold (Au), copper (Cu), nickel (Ni), tin (Sn), indium (In), chromium (Cr), platinum (Pt), titanium (Ti), germanium (Ge), and silicon (Si). Those skilled in the art can select appropriate bonding member materials according to the performance and process requirements of the micro-light-emitting diode, and this application does not impose any restrictions on this.

[0077] In one embodiment, the cross-sectional thickness of the bonding member (including at least one of the first bonding member 111, the second bonding member 121, the third bonding member 151, and the fourth bonding member 171) is related to the material used in the bonding member, so as to control the overall cross-sectional thickness of the micro-light-emitting diode while ensuring the electrical connection performance between the driving substrate and the first light-emitting chip, thereby facilitating the control of the overall size of the micro-light-emitting diode.

[0078] For example, when the bonding element is made of chromium, the cross-sectional thickness can be 2 nm; when the bonding element is made of platinum, the cross-sectional thickness can be 50 nm; when the bonding element is made of titanium, the cross-sectional thickness can be 10 nm; when the bonding element is made of gold, the cross-sectional thickness can be 100 nm; and when the bonding element is made of tin, the cross-sectional thickness can be 150 nm. In other embodiments of this application, the optimal cross-sectional thickness for bonding elements of different materials can be obtained through a limited number of experiments, which will not be elaborated here.

[0079] In one embodiment, the materials of the first insulating layer 140, the second insulating layer 141, and the third insulating layer 142 all include one or more of alumina (Al2O3), silicon dioxide (SiO2), and silicon nitride (SiN) to achieve electrical isolation between the anode conductive structure 130 and the anode auxiliary chip 112, and electrical isolation between the cathode conductive structure 160 and the cathode auxiliary chip 152. Optionally, the first insulating layer 140, the second insulating layer 141, and the third insulating layer 142 can all be single-layer material layers or combinations of multiple material layers; this application does not impose any limitations on this.

[0080] In one embodiment, the first insulating layer 140 and the second insulating layer 141 can be two insulating layers obtained by patterning the same insulating material. That is, the first insulating layer 140 and the second insulating layer 141 can be formed simultaneously through the same process to improve production efficiency and reduce process complexity.

[0081] In one embodiment, the anode conductive layer 131, the cathode conductive layer 161, and the cathode connection layer 170 are all made of transparent conductive materials to reduce light loss while ensuring current spreading capability. Optionally, the transparent conductive material includes any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), or any one of metal alloy materials such as gold beryllium alloy (AuBe), ammonium zinc alloy (AnZn), gold germanium alloy (AuGe), and gold nickel alloy (AuNi).

[0082] In one embodiment, the thicknesses of the anode conductive layer 131, the cathode conductive layer 161, and the cathode connection layer 170 range from 0.01 μm to 1 μm. It should be noted that the thickness of the conductive layers (i.e., any one of the anode conductive layer 131, cathode conductive layer 161, and cathode connection layer 170) is positively correlated with conductivity, and inversely correlated with transmittance; that is, the greater the thickness of the conductive layer, the better the conductivity, but the transmittance of the conductive layer will decrease, resulting in light loss. Therefore, the thickness of the conductive layer can be comprehensively considered in conjunction with conductivity and transmittance requirements, and this application does not impose any limitations on it.

[0083] In one embodiment, the anode conductive layer 131 and the cathode conductive layer 161 can be two conductive layers obtained by patterning the same transparent conductive material. The anode conductive layer 131 and the cathode conductive layer 161 are isolated from each other to ensure electrical isolation between the conductive paths corresponding to the anode conductive structure 130 and the cathode conductive structure 160, thus preventing short circuits or open circuits in the conductive paths formed between the first light-emitting chip 122 and the driving substrate 100. Optionally, the anode conductive layer 131 and the cathode conductive layer 161 can be formed simultaneously in the same process, and then patterned to form mutually isolated anode conductive layers 131 and 161, thereby improving production efficiency and reducing process complexity.

[0084] In one embodiment, the materials of both the anode connector 132 and the cathode connector 162 include at least one of aluminum (Al), copper (Cu), tungsten (W), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), chromium (Cr), polycrystalline silicon, composite materials, and carbon nanotubes, to adapt to different electrical transmission requirements.

[0085] It should be noted that the materials of the anode connector 132 and the cathode connector 162 can be the same or different. Those skilled in the art can select appropriate materials according to the performance requirements of the micro light-emitting diode, or they can take into account the materials of other structures in the micro light-emitting diode. This application does not impose any restrictions on this.

[0086] In one embodiment, the anode connector 132 and the cathode connector 162 can be square, circular, or irregularly shaped connectors. This can be understood as the anode connector 132 and the cathode connector 162 having a square, circular, or irregularly shaped cross-section along a direction parallel to the surface of the driving substrate 100. The irregular shape includes triangles, pentagons, hexagons, ellipses, and other commonly used geometric shapes or irregular shapes to adapt to different application requirements. Optionally, the anode connector 132 (or the cathode connector 162) can be a single connector or an array structure composed of multiple connectors to adapt to different application requirements.

[0087] In one embodiment, along a first direction (i.e., the X direction) perpendicular to the surface of the driving substrate 100, the cross-sectional corner of the anode connector 132 on the side near the driving substrate 100 is α, and the cross-sectional corner of the cathode connector 162 on the side near the driving substrate 100 is β. The angle range of both cross-sectional corners α and β includes 90°~150°, so as to reduce the manufacturing difficulty of the anode connector 132 and the cathode connector 162.

[0088] In one embodiment, the micro-light-emitting diode further includes a first pixel layer P1 and a second pixel layer P2; wherein, the first pixel layer P1 is located on the surface of the driving substrate 100, the first bonding component 110 and the anode conductive structure 130 are both located within the first pixel layer P1, the first pixel layer P1 further includes a first dielectric layer 180, the first dielectric layer 180 is located on the side of the first bonding component 110 and the anode conductive structure 130 away from the driving substrate 100; the second pixel layer P2 is located on the side of the first pixel layer P1 away from the driving substrate 100, the second bonding component 120 is located within the second pixel layer P2, the second pixel layer P2 further includes a second dielectric layer 181, the second dielectric layer 181 is located on the side of the second bonding component 120 away from the first pixel layer P1.

[0089] It should be noted that the first pixel layer P1 further includes a first insulating layer 140, a second insulating layer 141, a third bonding assembly 150, and a cathode conductive structure 160. The first dielectric layer 180 is located on the side of the first insulating layer 140, the second insulating layer 141, and the third bonding assembly 150 away from the driving substrate 100, and the surface of the first dielectric layer 180 away from the driving substrate 100 is flush with the surfaces of the anode conductive structure 130 and the cathode conductive structure 160 away from the driving substrate 100. Meanwhile, the second pixel layer P2 further includes a third insulating layer 142, a cathode connection layer 170, a fourth bonding member 171, and a common cathode reinforcement member 172. The surface of the second dielectric layer 181 away from the driving substrate 100 is higher than the surfaces of other structures in the second pixel layer P2 away from the driving substrate 100, to ensure that the second dielectric layer 181 can protect other structures in the second pixel layer P2 from damage.

[0090] In one embodiment, the materials of the first dielectric layer 180 and the second dielectric layer 181 both include transparent dielectric materials, and the transparent dielectric materials include one or more of silicon oxide (SiO2), silicon nitride (SiN), silicon carbide (SiC), silicon carbon nitride (SiCN), phosphate glass (PSG), borosilicate glass (BPSG), and photoresist (PR).

[0091] In one embodiment, the first dielectric layer 180 is provided with openings (not shown in the figure) that mate with the anode connector 132 and the cathode connector 162. Exemplarily, when the connectors (including either the anode connector 132 or the cathode connector 162) are square, the openings are square holes; when the connectors are circular, the openings are circular holes; and when the connectors are irregularly shaped, the openings are irregularly shaped holes (irregular shapes include triangles, pentagons, hexagons, ellipses, and other commonly used geometric shapes or irregular shapes). Furthermore, when the anode connector 132 (or cathode connector 162) is a single connector, a matching single opening is provided in the first dielectric layer 180; when the anode connector 132 (or cathode connector 162) is an array structure composed of multiple connectors, a matching porous array is provided in the first dielectric layer 180 to assist the anode connector 132 and cathode connector 162 in penetrating the first dielectric layer 180.

[0092] Continue reading Figure 1 and Figure 2 In one embodiment, when the driving substrate 100 includes at least two anode contacts 101, a fourth bonding assembly 190 is further provided in the first pixel layer P1. The fourth bonding assembly 190 includes a fifth bonding member 191 and a second light-emitting chip 192 located on the side of the fifth bonding member 191 away from the driving substrate 100. The fifth bonding member 191 and the first bonding member 111 respectively contact different anode contacts 101, and the fifth bonding member 191 is anode connected to the second light-emitting chip 192.

[0093] Continue reading Figure 1 When the fourth bonding component 190 is provided in the first pixel layer P1, the second insulating layer 141 also covers the side of the fourth bonding component 190 away from the driving substrate 100, and the second insulating layer 141 also has a second opening 192a that exposes the cathode of the second light-emitting chip 192; correspondingly, the cathode conductive layer 161 also covers the surface of the second insulating layer 141 away from the fourth bonding component 190, and the cathode conductive layer 161 extends into the second opening 192a and is connected to the cathode of the second light-emitting chip 192.

[0094] It is important to emphasize that the cathode conductive layer 161 above the third bonding component 150 and the fourth bonding component 190 in the first pixel layer P1 is electrically connected to each other, allowing the cathode of the second light-emitting chip 192 to be connected to the cathode contact 102 through the cathode conductive layer 161, thereby ensuring that the second light-emitting chip 192 can emit light normally. Simultaneously, with the second light-emitting chip 192 disposed in the first pixel layer P1, no other chips or opaque semiconductor structures are disposed in the display substrate on the side of the second light-emitting chip 192 away from the driving substrate 100, ensuring that the light emitted by the second light-emitting chip 192 can exit the display substrate.

[0095] In some embodiments, the cathode conductive layer 161 above the third bonding component 150 and the fourth bonding component 190 in the first pixel layer P1 is not electrically connected to the anode conductive layer 131 above the first bonding component 110, so as to ensure that the first light-emitting chip 122 and the second light-emitting chip 192 are isolated from each other, thereby allowing the driving substrate 100 to control the light-emitting function of the first light-emitting chip 122 and the second light-emitting chip 192 respectively.

[0096] In one embodiment, the anode conductive layer includes at least one of a transparent conductive layer and a conductive reinforcement. Figure 1 This diagram illustrates the structure of a micro-light-emitting diode when the anode conductive layer consists only of a transparent conductive layer. Figure 3 and Figure 4 The diagrams show the structural schematics for two different cases where the anode conductive layer of a micro light-emitting diode includes a transparent conductive layer and a conductive enhancement element. Figure 5 This diagram illustrates the structure of a micro-LED where the anode conductive layer consists only of a conductive enhancement element. The case where the anode conductive layer consists only of a transparent conductive layer has been described in detail previously and will not be repeated here.

[0097] See Figure 3 In one embodiment, when the anode conductive layer 131 includes a transparent conductive layer 131a and a conductive reinforcement 131b, the transparent conductive layer 131a is located on the side of the first insulating layer 140 away from the anode auxiliary chip 112 and extends to cover a portion of the surface of the first bonding member 111 away from the driving substrate 100. The conductive reinforcement 131b is located on the surface of the transparent conductive layer 131a away from the first bonding member 111. By providing the conductive reinforcement 131b on the transparent conductive layer 131a, the conductivity of the anode conductive layer 131 can be enhanced, improving the light-emitting effect of the first light-emitting chip, thereby improving the performance and stability of the micro-light-emitting diode, and further contributing to improving the performance and stability of the display substrate.

[0098] See Figure 4In one embodiment, when the anode conductive layer 131 includes a transparent conductive layer 131a and a conductive enhancement member 131b, the transparent conductive layer 131a is located on the side of the first insulating layer 140 away from the anode auxiliary chip 112 and extends to cover a portion of the surface of the first bonding member 111 away from the driving substrate 100. The conductive enhancement member 131b is located on the surface of the transparent conductive layer 131a away from the first bonding member 110, so as to further enhance the conductivity of the anode conductive layer 131, improve the light emission effect of the first light-emitting chip, thereby improving the performance and stability of the micro light-emitting diode, and thus helping to improve the performance and stability of the display substrate.

[0099] See Figure 5 In one embodiment, when the anode conductive layer 131 only includes a conductive reinforcement, the conductive reinforcement (i.e., the anode conductive layer 131) is located on the side of the first insulating layer 140 away from the anode auxiliary chip 112 and extends to cover a portion of the surface of the first bonding member 111 away from the driving substrate 100, so as to maintain the conductivity of the anode conductive layer 131, help improve the light emission effect of the first light-emitting chip, thereby helping to improve the performance and stability of the micro light-emitting diode, and further helping to improve the performance and stability of the display substrate.

[0100] In one embodiment, the material of the conductive reinforcement can be the same as that of the common cathode reinforcement, or it can be one or more of aluminum (Al), gold (Au), copper (Cu), nickel (Ni), tin (Sn), chromium (Cr), platinum (Pt), and titanium (Ti) to enhance the current in the conductive path where the conductive reinforcement is located.

[0101] See Figure 6 In one embodiment, two first pixel layers P1 (including a first pixel layer P1-1 near the driving substrate 100 and a first pixel layer P1-2 near the second pixel layer P2) are disposed between the driving substrate 100 and the second pixel layer P2. In two adjacent first pixel layers P1, the anode conductive structure 130 in the first pixel layer P1-1 near the driving substrate 100 is connected to the first bonding member 111 in the first pixel layer P1-2 away from the driving substrate 100. In other embodiments of this application, multiple first pixel layers may be disposed between the driving substrate and the second pixel layer as needed, and this application does not impose any limitations on this.

[0102] It should be noted that increasing the number of first pixel layers in a micro-LED does not affect the normal function of the first light-emitting chip, and changing the number of first pixel layers in a micro-LED does not limit the specific structural configuration of the first pixel layer. For example, when a micro-LED includes two first pixel layers P1, the anode conductive layer 131 of both first pixel layers P1 can be a transparent conductive layer or a conductive enhancement element. The anode conductive layer 131 of both first pixel layers P1 can also include a transparent conductive layer 131a and a conductive enhancement element 131b.

[0103] See Figure 7 In one embodiment, the micro-light-emitting diode further includes a microlens A. When the micro-light-emitting diode includes a microlens A, the microlens A is located on the side of the second pixel layer P2 away from the first pixel layer P1, so as to realize the light-focusing function of the micro-light-emitting diode.

[0104] See Figure 8 In one embodiment, the micro-light-emitting diode further includes a quantum dot layer B. When the micro-light-emitting diode includes the quantum dot layer B, the quantum dot layer B is located within the second pixel layer P2, and the quantum dot layer B is spaced apart on both sides of the first light-emitting chip 122.

[0105] Accordingly, this application also provides a method for manufacturing a display substrate, used to prepare the display substrate as described above. In one embodiment, the method for manufacturing the display substrate includes: providing a driving substrate; forming a first pixel layer on one side of the driving substrate where cathode contacts and anode contacts are formed, and forming an anode auxiliary chip and a cathode auxiliary chip within the first pixel layer; forming a second pixel layer on the side of the first pixel layer away from the driving substrate, forming a first light-emitting chip within the second pixel layer, and the first light-emitting chip being connected to the anode contacts and cathode contacts of the driving substrate respectively through an anode conductive structure and a cathode conductive structure within the first pixel layer.

[0106] It should be noted that the manufacturing methods of the various film layers and structures in the first pixel layer and the second pixel layer in the display substrate manufacturing method are common knowledge well known to those skilled in the art. The structures of the anode auxiliary chip and the cathode auxiliary chip are the same as those of the first light-emitting chip. Therefore, the anode auxiliary chip, the cathode auxiliary chip, and the first light-emitting chip can be manufactured using the same fabrication process. After forming the anode auxiliary chip and the cathode auxiliary chip, an etching step is added to form an opening in the first dielectric layer, and a filling process is added to form the anode connector and the cathode connector respectively, thereby completing the fabrication of the first pixel layer. This optimizes the process flow and reduces process complexity.

[0107] In one embodiment, a first pixel layer and a second pixel layer can be fabricated simultaneously using conventional processes. Then, the first pixel layer is bonded to the driving substrate using a bonding process, and the second pixel layer is bonded to the surface of the first pixel layer away from the driving substrate, thereby completing the fabrication of the micro-light-emitting diode and improving the production efficiency of the micro-light-emitting diode, which in turn helps to improve the production efficiency of the display substrate.

[0108] Accordingly, one embodiment of this application also provides a display device, which includes a projection module, the projection module including the display substrate as described above. See also... Figure 9 In one embodiment, the projection module 200 includes a first display device 210, a second display device 220, and a light-combining prism 230; wherein the first display device 210 and the second display device 220 are located on different sides of the light-combining prism 230, and both the first display device 210 and the second display device 220 are micro light-emitting diodes in the display substrate as described above; the light emitted by the first display device 210 and the light emitted by the second display device 220 are combined in the light-combining prism 230 and emitted through the optical system 240.

[0109] As described above, the projection module in the display device contains only two micro-display devices (i.e., the first display device and the second display device), which reduces the number of alignment steps required for the projection module, helps to reduce process steps, and improves the assembly efficiency of the projection module; by setting only one micro-display device (i.e., the first display device) and one light-combining prism in the direction perpendicular to the optical axis of the optical system, the volume of the projection module is reduced.

[0110] In one embodiment, the first display device 210 is a red-green dual-color micro-light-emitting diode (LED), and the second display device 220 is a red-blue dual-color micro-light-emitting diode (LED), wherein the red light wavelength of the first display device 210 is shorter than the red light wavelength of the second display device 220. For example, the red light wavelength of the first display device 210 is 615 nm and the green light wavelength is 525 nm; while the red light wavelength of the second display device 220 is 625 nm and the blue light wavelength is 460 nm.

[0111] In one embodiment, the beam combining prism 230 includes two prisms 231 with right-angled triangular cross-sections. The hypotenuses of the two prisms 231 are fitted together, and a bandpass filter 232 is provided on the mating surface of the two prisms 231 to simplify the structure of the beam combining prism and thus help save production costs. Optionally, the two prisms 231 are combined by surface bonding, avoiding the misalignment problem that easily occurs when the four prisms are arranged in an X-shape in a general beam combining prism, thereby helping to reduce image distortion caused by prism bonding.

[0112] In one embodiment, the bandpass filter 232 comprises multiple thin-film material layers with different wavelengths stacked alternately. The minimum wavelength of all the thin-film material layers is between the blue light wavelength of the second display device 220 and the green light wavelength of the first display device 210, for example, 465nm, 470nm, 480nm, 490nm, 500nm, or 510nm; the maximum wavelength of all the thin-film material layers is between the red light wavelength of the first display device 210 and the red light wavelength of the second display device 220, for example, 620nm. In this case, the bandpass filter 232 allows green light and short-wavelength red light to pass through, while reflecting blue light and long-wavelength red light.

[0113] It should be noted that the light emitted by the first display device 210 and the second display device 220 both contain red light components. Therefore, after the light emitted by the first display device 210 and the second display device 220 is combined by the light combining prism, the red light is superimposed and the brightness is increased. This allows the brightness of the green light emitted by the first display device 210 and the brightness of the blue light emitted by the second display device 220 to be driven by a larger current, thereby helping to improve the light output power of the projection module.

[0114] See Figure 10 In another embodiment of this application, the first display device 210 is a red-blue dual-color micro-light-emitting diode, and the second display device 220 is a red-green dual-color micro-light-emitting diode, wherein the red light wavelength of the first display device 210 is greater than the red light wavelength of the second display device 220. For example, the red light wavelength of the first display device 210 is 625nm and the blue light wavelength is 460nm; while the red light wavelength of the second display device 220 is 615nm and the green light wavelength is 525nm.

[0115] In one embodiment, the mating surfaces of the two prisms 231 of the light-combining prism 230 are provided with a reflective filter film 233. In one embodiment, the reflective filter film 233 comprises multiple thin film material layers with different wavelengths stacked alternately. The minimum wavelength of all thin film material layers is between the blue light wavelength of the first display device 210 and the green light wavelength of the second display device 220, for example, 465nm, 470nm, 480nm, 490nm, 500nm, or 510nm; the maximum wavelength of all thin film material layers is between the red light wavelength of the second display device 220 and the red light wavelength of the first display device 210, for example, 620nm. In this case, the reflective filter film 233 allows blue light and long-wavelength red light to pass through, and reflects green light and short-wavelength red light.

[0116] See Figure 11In one embodiment, the projection module further includes a third display device 250, and the specific structure of the third display device 250 can be referenced to the micro-light-emitting diodes described above. In this case, the first display device 210 is a blue-green dual-color micro-light-emitting diode, while the second display device 220 and the third display device 250 are both micro-light-emitting diodes that emit only red light, and the red light wavelength of the third display device 250 is shorter than that of the second display device 220. For example, the green light wavelength of the first display device 210 is 525 nm, and the blue light wavelength is 460 nm; the red light wavelength of the second display device 220 is 625 nm; and the red light wavelength of the third display device 250 is 615 nm.

[0117] In one embodiment, the light combining prism 230 includes four prisms 231 with right-angled triangular cross sections. The right-angled sides of the four prisms 231 are sequentially attached to form an X-cube light combining prism. The attachment surfaces of the light combining prism 230 are respectively provided with a reverse filter film 233 and a short-pass filter film 234.

[0118] In one embodiment, the anti-filter film 233 comprises multiple thin film material layers with different wavelengths stacked alternately. The minimum wavelength of all thin film material layers is between the green light wavelength of the first display device 210 and the short red light wavelength of the third display device 250, for example, 560 nm; the maximum wavelength of all thin film material layers is between the short red light wavelength of the third display device 250 and the long red light wavelength of the second display device 220, for example, 620 nm. In one embodiment, the cutoff wavelength of the short-pass filter film 234 is between the wavelength of the third display device 250 and the wavelength of the second display device 220, for example, 620 nm.

[0119] Continue reading Figure 11 In one embodiment, the blue and green light emitted by the first display device 210 can both penetrate the anti-reflective filter 233 and the short-pass filter 234. The red light emitted by the second display device 220 can penetrate the anti-reflective filter 233 and be reflected by the short-pass filter 234. The red light emitted by the third display device 250 can penetrate the short-pass filter 234 and be reflected by the anti-reflective filter 233. At this time, the blue and green light emitted by the first display device 210 and the red light emitted by the second and third display devices 220 are combined by the light-combining prism 230 and projected out through the optical system 240.

[0120] It should be noted that the light emitted by the second display device 220 and the third display device 250 both contain red light components. Therefore, after the light emitted by the second display device 220 and the third display device 250 is combined by the light combining prism, the red light is superimposed and the brightness is increased. This allows the brightness of the green and blue light emitted by the first display device 210 to be driven by a larger current, thereby helping to improve the light output power of the projection module.

[0121] See Figure 12 In one embodiment, the projection module includes three microdisplay devices. The first display device 210 is a blue-green dual-color microlight-emitting diode (LED), while the second and third display devices 220 and 250 are both red-emitting LEDs, with the red light wavelength of the third display device 250 being shorter than that of the second display device 220. For example, the green light wavelength of the first display device 210 is 525 nm, and the blue light wavelength is 460 nm; the red light wavelength of the second display device 220 is 625 nm; and the red light wavelength of the third display device 250 is 615 nm.

[0122] In one embodiment, the light-combining prism 230 includes four prisms 231 with right-angled triangular cross-sections. The four prisms 231 are arranged along the optical axis of the optical system 240. The four prisms 231 are arranged in pairs, with the inclined surfaces of two adjacent prisms 231 in the same group touching each other, and the right-angled surfaces of two adjacent prisms 231 in different groups touching each other to form a light-combining prism 230 with an overall rectangular cross-section. The touching surfaces of both groups of prisms 231 are provided with short-pass filters (i.e., the first filter 235 and the second filter 236 are both short-pass filters).

[0123] In one embodiment, the cutoff wavelength of the first filter 235 is between the green light wavelength of the first display device 210 and the red light wavelength of the third display device 250, allowing green and blue light to pass through the first filter 235 while reflecting red light. The cutoff wavelength of the second filter 236 is between the red light wavelength of the third display device 250 and the red light wavelength of the second display device 220, allowing green, blue, and red light emitted by the third display device 250 to pass through the second filter 236 while reflecting red light emitted by the second display device 220. Optionally, the cutoff wavelength of the second filter 236 may be, for example, 620 nm.

[0124] It should be noted that when the red light wavelength of the third display device 250 is greater than that of the second display device 220, for example, when the red light wavelength of the second display device 220 is 615nm and the red light wavelength of the third display device 250 is 625nm, both the first filter film 235 and the second filter film 236 can be configured as reflective filters. In this case, the cutoff wavelength of the first filter film 235 is between the green light wavelength of the first display device 210 and the red light wavelength of the third display device 250, allowing green and blue light to pass through the first filter film 235, while red light is reflected by the first filter film 235; the cutoff wavelength of the second filter film 236 is between the red light wavelength of the second display device 220 and the red light wavelength of the third display device 250, allowing green, blue, and red light emitted by the third display device 250 to pass through the second filter film 236, while red light emitted by the second display device 220 is reflected by the second filter film 236. Optionally, the cutoff wavelength of the first filter 235 is, for example, 580 nm, and the cutoff wavelength of the second filter 236 is, for example, 620 nm.

[0125] In one embodiment, the blue and green light emitted by the first display device 210 can both penetrate the first filter film 235 and the second filter film 236. The red light emitted by the second display device 220 can be reflected by the second filter film 236, and the red light emitted by the third display device 250 can be reflected by the first filter film 235 and penetrate the second filter film 236. At this time, the blue and green light emitted by the first display device 210 and the red light emitted by the second display device 220 and the third display device 250 are combined by the light combining prism 230 and projected out through the optical system 240.

[0126] It should be noted that the light emitted by the second display device 220 and the third display device 250 both contain red light components. Therefore, after the light emitted by the second display device 220 and the third display device 250 is combined by the light combining prism, the red light is superimposed and the brightness is increased. This allows the brightness of the green and blue light emitted by the first display device 210 to be driven by a larger current, thereby helping to improve the light output power of the projection module.

[0127] See Figure 13 In one embodiment, the projection module includes two microdisplay devices: a first display device 210 is a red-green dual-color microlight-emitting diode (LED), and a second display device 220 is a red-blue dual-color microlight-emitting diode (LED). The red wavelength of the first display device 210 is shorter than that of the second display device 220. For example, the red wavelength of the first display device 210 is 615 nm and the green wavelength is 525 nm; while the red wavelength of the second display device 220 is 625 nm and the blue wavelength is 460 nm.

[0128] In one embodiment, the light combining prism 230 includes a first prism 237 and a second prism 238, wherein the first prism 237 is a prism with a right trapezoidal cross section, the second prism 238 is a prism with a triangular cross section, and the angle θ1 of the base angle of the cross section of the second prism 238 is greater than the total internal reflection angle corresponding to the red and blue light emitted by the second display device 220.

[0129] In one embodiment, a filter film 239 is provided on the mating surface of the first prism 237 and the second prism 238, allowing the red and green light emitted by the first display device 210 to pass through the filter film 239, while the red and blue light emitted by the second display device 220 is reflected by the filter film 239. At this time, the red and green light emitted by the first display device 210 and the red and blue light emitted by the second display device 220 are combined by the light-combining prism 230 and then projected out through the optical system 240.

[0130] It should be noted that the light emitted by the first display device 210 and the second display device 220 both contain red light components. Therefore, after the light emitted by the first display device 210 and the second display device 220 is combined by the light combining prism, the red light is superimposed and the brightness is increased. This allows the brightness of the green light emitted by the first display device 210 and the blue light emitted by the second display device 220 to be driven by a larger current, thereby helping to improve the light output power of the projection module.

[0131] contrast Figure 13 and Figure 14 It is understood that in other embodiments of this application, the first display device 210 can be a red-blue dual-color micro-light-emitting diode, and the second display device 220 can be a red-green dual-color micro-light-emitting diode. The red light wavelength of the first display device 210 is greater than that of the second display device 220, so that the angle θ1 of the bottom corner of the second prism 238 is greater than the total internal reflection angle corresponding to the red and green light emitted by the second display device 220. The filter film 239 satisfies the condition that "the red and blue light emitted by the first display device 210 can pass through the filter film 239, and the red and green light emitted by the second display device 220 is reflected by the filter film 239." In this case, the red and blue light emitted by the first display device 210 and the red and green light emitted by the second display device 220 are combined by the light-combining prism 230 and projected through the optical system 240 to improve the light output power of the projection module.

[0132] See Figure 15In one embodiment, the projection module includes two microdisplay devices: a first display device 210 is a red-green dual-color microlight-emitting diode (LED), and a second display device 220 is a red-blue dual-color microlight-emitting diode (LED). The red wavelength of the first display device 210 is shorter than that of the second display device 220. For example, the red wavelength of the first display device 210 is 615 nm and the green wavelength is 525 nm; while the red wavelength of the second display device 220 is 625 nm and the blue wavelength is 460 nm.

[0133] In one embodiment, the light-combining prism 230 includes a first prism 237 and a second prism 238. The first prism 237 is a trapezoidal prism, and the second prism 238 is a triangular prism. The angle θ2 of one of the base angles of the first prism 237 is greater than the total internal reflection angle corresponding to the red and green light emitted by the first display device 210, and the angle θ1 of the base angle of the second prism 238 is greater than the total internal reflection angle corresponding to the red and blue light emitted by the second display device 220.

[0134] In one embodiment, the mating surfaces of the first prism 237 and the second prism 238 are provided with a filter film 239 and an air gap (see reference). Figure 15 The combined light prism (partial magnification section) causes the red and green light emitted by the first display device 210 to undergo total internal reflection, then reflection by the filter film 239, before being projected onto the optical system 240; and causes the red and blue light emitted by the second display device 220 to undergo total internal reflection, then specular reflection, before being projected onto the optical system 240. At this time, the red and green light emitted by the first display device 210 and the red and blue light emitted by the second display device 220 are combined by the combined light prism 230 and projected out through the optical system 240.

[0135] It should be noted that the light emitted by the first display device 210 and the second display device 220 both contain red light components. Therefore, after the light emitted by the first display device 210 and the second display device 220 is combined by the light combining prism, the red light is superimposed and the brightness is increased. This allows the brightness of the green light emitted by the first display device 210 and the blue light emitted by the second display device 220 to be driven by a larger current, thereby helping to improve the light output power of the projection module.

[0136] contrast Figure 15 and Figure 16It is understood that in other embodiments of this application, the first display device 210 may be a red-blue dual-color micro light-emitting diode, the second display device 220 may be a red-green dual-color micro light-emitting diode, and the red light wavelength of the first display device 210 may be greater than the red light wavelength of the second display device 220; the angle θ2 of one of the bottom corners of the first prism 237 may be greater than the total internal reflection angle corresponding to the red and blue light emitted by the first display device 210, and the angle θ1 of the bottom corner of the second prism 238 may be greater than the total internal reflection angle corresponding to the red and green light emitted by the second display device 220.

[0137] At this time, since the mating surfaces of the first prism 237 and the second prism 238 are still provided with a filter film 239 and an air gap (see reference) Figure 16 (The magnified portion of the light-combining prism) is used to combine the red and blue light emitted by the first display device 210 through total internal reflection and then reflection by the filter film 239 before it is directed towards the optical system 240. Similarly, the red and green light emitted by the second display device 220 undergoes total internal reflection and then specular reflection before being directed towards the optical system 240. At this point, the red and blue light emitted by the first display device 210 and the red and green light emitted by the second display device 220 are combined by the light-combining prism 230 and then projected out through the optical system 240.

[0138] It should be noted that the light emitted by the first display device 210 and the second display device 220 both contain red light components. Therefore, after the light emitted by the first display device 210 and the second display device 220 is combined by the light combining prism, the red light is superimposed and the brightness is increased. This allows the brightness of the blue light emitted by the first display device 210 and the green light emitted by the second display device 220 to be driven by a larger current, thereby helping to improve the light output power of the projection module.

[0139] In summary, this application provides a display substrate and a display device. By providing a first bonding assembly for connecting anode contacts on the surface of a driving substrate, and providing a second bonding assembly on the side of the first bonding assembly away from the driving substrate, and by using an anode conductive structure to connect the first bonding bond in the first bonding assembly and the second bonding member in the second bonding assembly, the height of the anode connector in the anode conductive structure is reduced, thereby reducing the process complexity and difficulty of the anode connector, which is beneficial to improving the yield and production rate of micro light-emitting diodes, and thus beneficial to improving the yield and stability of the display device.

[0140] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0141] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0142] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A display substrate, characterized in that, Includes a micro light-emitting diode, wherein the micro light-emitting diode includes: A driving substrate, wherein an anode contact is provided on one side surface of the driving substrate; A first bonding assembly is located on the surface of the driving substrate. The first bonding assembly includes a first bonding member and an anode auxiliary chip located on the side of the first bonding member away from the driving substrate. The first bonding member is in contact with the anode contact. The second bonding assembly is located on the side of the first bonding assembly away from the driving substrate. The second bonding assembly includes a second bonding member and a first light-emitting chip located on the side of the second bonding member away from the driving substrate. The second bonding member is connected to the anode of the first light-emitting chip. The anode conductive structure is connected to both the second bonding member and the first bonding member.

2. The display substrate according to claim 1, characterized in that, The micro light-emitting diode also includes: A first insulating layer at least covers the anode auxiliary chip; The anode conductive structure includes: An anode conductive layer is located on the side of the first insulating layer away from the anode auxiliary chip and is connected to the first bonding member; An anode connector is located on the side of the anode conductive layer away from the first insulating layer and is connected to both the anode conductive layer and the second bonding member.

3. The display substrate according to claim 2, characterized in that, The anode conductive layer includes at least one of a transparent conductive layer and a conductive reinforcement; wherein... In the case where the anode conductive layer includes the transparent conductive layer and the conductive reinforcement, the transparent conductive layer is located on the side of the first insulating layer away from the anode auxiliary chip, the conductive reinforcement is located on the side of the transparent conductive layer away from the first insulating layer, and the conductive reinforcement at least covers the surface of the portion of the transparent conductive layer connected to the first bonding member.

4. The display substrate according to claim 1, characterized in that, The driving substrate further includes a cathode contact, which is located on the same side of the driving substrate as the anode contact, and the cathode contact and the anode contact are isolated from each other; The micro light-emitting diode also includes: The third bonding assembly is located on the surface of the driving substrate and on the same side as the first bonding assembly. The third bonding assembly includes a third bonding member and a cathode auxiliary chip located on the side of the third bonding member away from the driving substrate. The third bonding member is in contact with the cathode contact. The cathode conductive structure is connected to the cathode of the third bonding member and the cathode of the first light-emitting chip, respectively.

5. The display substrate according to claim 4, characterized in that, The micro light-emitting diode also includes: A second insulating layer at least covers the cathode auxiliary chip; The cathode conductive structure includes: A cathode conductive layer is located on the side of the second insulating layer away from the cathode auxiliary chip and is connected to the third bonding member; A cathode connector is located on the side of the cathode conductive layer away from the second insulating layer, and is connected to both the cathode conductive layer and the cathode of the first light-emitting chip.

6. The display substrate according to claim 5, characterized in that, The micro light-emitting diode also includes: A third insulating layer, at least covering the second bonding assembly, is located on the side of the anode conductive structure and the cathode conductive structure away from the driving substrate. The third insulating layer includes a first opening exposing the cathode of the first light-emitting chip, and the orthographic projection of the third insulating layer toward the driving substrate is separate from the orthographic projection of the cathode conductive structure toward the driving substrate. A cathode connection layer is located on the side of the third insulating layer away from the second bonding component. The cathode connection layer extends into the first opening and is connected to the cathode of the cathode connector and the cathode of the first light-emitting chip, respectively.

7. The display substrate according to claim 1, characterized in that, The micro light-emitting diode also includes: A first pixel layer is located on the surface of the driving substrate. The first bonding component and the anode conductive structure are both located within the first pixel layer. The first pixel layer also includes a first dielectric layer, which is located on the side of the first bonding component and the anode conductive structure away from the driving substrate. The second pixel layer is located on the side of the first pixel layer away from the driving substrate. The second bonding assembly is located within the second pixel layer. The second pixel layer also includes a second dielectric layer, which is located on the side of the second bonding assembly away from the first pixel layer.

8. The display substrate according to claim 7, characterized in that, At least two first pixel layers are disposed between the driving substrate and the second pixel layer, and in two adjacent first pixel layers, the anodic conductive structure in the first pixel layer closer to the driving substrate is connected to the first bonding member in the first pixel layer farther from the driving substrate.

9. The display substrate according to claim 7, characterized in that, The driving substrate includes at least two of the anode contacts; The first pixel layer is further provided with a fourth bonding component, which includes a fifth bonding member and a second light-emitting chip located on the side of the fifth bonding member away from the driving substrate. The fifth bonding member and the first bonding member respectively contact different anode contacts, and the fifth bonding member is connected to the anode of the second light-emitting chip.

10. A display device, characterized in that, It includes a projection module, wherein the projection module includes a display substrate as described in any one of claims 1 to 9.

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