Sputtering member

Abstract

Provided is a sputtering member comprising an alloy of Co, such as a Co-Nb alloy, and a group 5 element of the periodic table, said sputtering member being capable of reducing fine particles generated during sputtering. The sputtering member contains at least 1 at% and less than 25 at% of Nb, with the remainder comprising Co and unavoidable impurities, and has a relative density of 99.7% or more. The sputtering member contains at least 1 at% and less than 25 at% of one or more of V, Nb and Ta in total, with the balance being Co and unavoidable impurities, and has a relative density of 99.7% or more.

Description

Technical Field

[0001] This invention relates to a sputtering target component and sputtering components such as coils. Background Technology

[0002] Co alloys are sometimes used as seed layers in the stacked structures of magnetic recording media such as hard disk drives, or as diffusion barrier layers in the multilayer wiring structures of semiconductor devices. In recent years, Co-Nb alloys and Co-Ta alloys, which are easy to stably obtain amorphous films, have been studied as Co alloys used as seed layers and diffusion barrier layers (Patent Document 1, Patent Document 2).

[0003] For thin layers such as seed layers and diffusion barrier layers, from a high productivity standpoint, the method of sputtering thin films onto a substrate using a sputtering target prepared with a composition suitable for each layer is often employed. Sputtering is a type of physical vapor deposition (PVD) that uses ionized inert gas atoms, such as Ar, to bombard the surface of a sputtering target at high speed in a vacuum, ejecting particles of the film-forming material constituting the sputtering target and causing them to deposit on the substrate surface to form a film. Therefore, it would be very convenient to use sputtering to form thin layers such as seed layers and diffusion barrier layers composed of Co-Nb alloys and Co-Ta alloys.

[0004] Patent Document 3 describes a Co alloy target suitable for forming a seed layer of a magnetic recording medium, which has improved machinability. More specifically, Patent Document 3 describes a Co alloy target having a Co alloy composition, containing 25 to 90 atomic percent of one or more high-melting-point metal elements selected from Nb, Ta, Mo, W, and Ti, with the balance substantially consisting of Co. Examples include a Co-Nb alloy target containing 75 atomic percent Nb and a Co-Ta alloy target containing 75 atomic percent Ta.

[0005] Existing technical documents

[0006] Patent documents Patent Document 1: Japanese Patent Application Publication No. 2002-222518 Patent Document 2: International Publication No. 2021 / 245893 Patent Document 3: Japanese Patent No. 4427792 Summary of the Invention The technical problem that the invention aims to solve When using sputtering to form thin layers of alloys of Co and Group 5 elements, such as Co-Nb and Co-Ta alloys, it is very convenient to use a sputtering target made of an alloy of Co and Group 5 elements. Furthermore, when using sputtering to form thin layers of alloys of Co and Group 5 elements, in order to control the film thickness at the outer periphery of the sputtering target or to increase the straightness of the sputtered particles, it is sometimes preferable to use components made of alloys of Co and Group 5 elements in the sputtering apparatus, such as coils made of alloys of Co and Group 5 elements (e.g., high-speed deflection coils, high-speed focusing coils).

[0007] However, conventional alloys of Co with Group 5 elements, such as Co-Nb and Co-Ta alloys, have room for improvement in suppressing particulate matter generated during sputtering. The present invention was created in view of the above-mentioned situation. In one embodiment, the technical problem to be solved is to provide a sputtering component made of a Co-Nb alloy capable of suppressing particulate matter generated during sputtering. In another embodiment, the technical problem to be solved is to provide a sputtering component made of an alloy of Co with Group 5 elements capable of suppressing particulate matter generated during sputtering.

[0008] Methods for solving technical problems In order to solve the above-mentioned technical problems, the inventors conducted in-depth research and discovered that by using Co-Nb alloy powder with consideration for particle size and flowability as raw material, and hot-pressing it under appropriate conditions, a characteristic Co-Nb alloy sintered body can be obtained. Furthermore, this Co-Nb alloy sintered body can significantly suppress the particles generated during sputtering. In addition, not only Co-Nb alloys, but also alloys of Co with elements of Group 5 of the periodic table (however, excluding Db) have shown a similar tendency. This can be attributed to the fact that alloys of Co with elements of Group 5 of the periodic table exhibit similar phase diagrams. The present invention was made based on the above insights, as illustrated below.

[0009] [Method 1] A sputtering component is a sputtering component containing 1 at% to less than 25 at% Nb, with the balance being Co and unavoidable impurities, having a relative density of 99.7% or more.

[0010] [Method 2] The sputtering component as described in Method 1, wherein the actual density is 8.80–9.00 g / cm³. 3 .

[0011] [Method 3] The sputtering component as described in method 1 or 2, wherein the Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 700.

[0012] [Method 4] The sputtering component according to any one of embodiments 1 to 3, wherein, in the sputtering component, clusters of metal Co particles and / or metal Nb particles are dispersed in a particulate state in the matrix phase of the intermetallic compound, or clusters of intermetallic compound particles are dispersed in a particulate state in the matrix phase of metal Co, and the average diameter of the clusters is 50 μm or less.

[0013] [Method 5] The sputtering component as described in any one of methods 1 to 4, wherein the elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 is 0.35 to 0.80 mm.

[0014] [Method 6] The sputtering component as described in any one of methods 1 to 5, wherein it contains 10 at% to 22 at% Nb.

[0015] [Method 7] The sputtering component as described in any one of methods 1 to 6, wherein the sputtering component is a sputtering target component or a coil.

[0016] [Method 8] A sputtering component contains 1 at% to less than 25 at% Nb, with the balance being Co and unavoidable impurities. In the sputtering component, clusters of Co particles and / or Nb particles are dispersed in a particulate form in a matrix phase of an intermetallic compound, or clusters of intermetallic compound particles are dispersed in a particulate form in a Co matrix phase, and the average diameter of the clusters is 50 μm or less.

[0017] [Method 9] The sputtering component as described in Method 8, wherein the Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 700.

[0018] [Method 10] The sputtering component as described in method 8 or 9, wherein the elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 is 0.35 to 0.80 mm.

[0019] [Method 11] The sputtering component as described in any one of methods 8 to 10, wherein it contains 10 at% to 22 at% Nb.

[0020] [Method 12] The sputtering component as described in any one of embodiments 8 to 11, wherein the sputtering component is a sputtering target component or a coil.

[0021] [Method 13] A sputtering component comprising one or more of V, Nb and Ta in total of 1 at% to less than 25 at% and the balance being composed of Co and unavoidable impurities, having a relative density of 99.7% or more.

[0022] [Method 14] The sputtering component as described in method 13, wherein the actual density is 8.10 to 11.50 g / cm³. 3 .

[0023] [Method 15] The sputtering component as described in method 13 or 14, wherein the Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 1000.

[0024] [Method 16] The sputtering component according to any one of embodiments 13 to 15, wherein the sputtering component exists in a state in which clusters of one or more of metal Co particles, metal V particles, metal Nb particles and metal Ta particles are dispersed in a particulate form in the matrix phase of the intermetallic compound, or in a state in which clusters of intermetallic compound particles are dispersed in a particulate form in the matrix phase of metal Co, and the average diameter of the cluster is 50 μm or less.

[0025] [Method 17] The sputtering component as described in any one of methods 13 to 16, wherein the elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 is 0.20 to 0.80 mm.

[0026] [Method 18] The sputtering component as described in any one of embodiments 13 to 17, wherein it contains a total of 10 at% to 22 at% of one or more of V, Nb and Ta.

[0027] [Method 19] Sputtering components as described in methods 13 to 18, wherein the sputtering component is a sputtering target component or a coil.

[0028] [Method 20] A sputtering component is a sputtering component that contains a total of more than 1 at% to less than 25 at% of one or more of V, Nb and Ta, with the balance being Co and unavoidable impurities. In the sputtering component, clusters of one or more of Co particles, V particles, Nb particles and Ta particles are dispersed in particulate form in a matrix phase of an intermetallic compound, or clusters of intermetallic compound particles are dispersed in particulate form in a matrix phase of Co, and the average diameter of the clusters is 50 μm or less.

[0029] [Method 21] The sputtering component as described in Method 20, wherein the Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 1000.

[0030] [Method 22] The sputtering component as described in method 20 or 21, wherein the elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 is 0.20 to 0.80 mm.

[0031] [Method 23] The sputtering component as described in any one of embodiments 20 to 22, wherein it contains a total of 10 at% to 22 at% of one or more of V, Nb and Ta.

[0032] [Method 24] Sputtering components as described in methods 20 to 23, wherein the sputtering component is a sputtering target component or a coil.

[0033] The effects of the invention An embodiment of the present invention relates to a sputtering component made of an alloy of Co (such as a Co-Nb alloy) and elements of Group 5 of the periodic table (except for Db), which can significantly reduce particulate matter during sputtering. First, this sputtering component has improved density, resulting in fewer pores and less impact from foreign particles (dust) adhering to these pores. Second, the metallic phase clusters with relatively high sputtering rates are finely dispersed in this sputtering component. Therefore, it is difficult to generate large defects during sputtering, and peeling starting from these large defects is less likely to occur. For these reasons, it can be considered that particulate matter generated during sputtering can be reduced. Therefore, this sputtering component can be expected to produce thin layers with excellent quality stability made of an alloy of Co (such as a Co-Nb alloy) and elements of Group 5 of the periodic table. Attached Figure Description

[0034] Figure 1This is an example of a tissue image taken using an optical microscope of a sputtering component according to an embodiment of the present invention.

[0035] Figure 2 Yes Figure 1 Examples of tissue images after image processing. Detailed Implementation

[0036] (1. Components) A sputtering component according to one embodiment of the present invention contains 1 at% to less than 25 at% Nb, with the balance consisting of Co and unavoidable impurities. The Nb content in the sputtering component is less than 25 at%, which is advantageous for achieving excellent processability. Furthermore, the Nb content in the sputtering component is 1 at% or more, which is advantageous for utilizing the specific functions of Nb (e.g., as a seed layer or diffusion barrier layer). As long as the condition of an Nb content of 1 at% or more and less than 25 at% is met, the Nb content can be appropriately set according to the application. For example, a sputtering component according to another embodiment of the present invention contains 1 at% to less than 22 at% Nb, with the balance consisting of Co and unavoidable impurities. A sputtering component according to yet another embodiment of the present invention contains 2 at% to less than 20 at% Nb, with the balance consisting of Co and unavoidable impurities. A sputtering component according to another embodiment of the present invention contains 2 at% to 10 at% Nb, with the balance being Co and unavoidable impurities. A sputtering component according to another embodiment of the present invention contains 10 at% to 22 at% Nb, with the balance being Co and unavoidable impurities. A sputtering component according to yet another embodiment of the present invention contains 15 at% to 22 at% Nb, with the balance being Co and unavoidable impurities.

[0037] Furthermore, in one embodiment of the present invention, the sputtering component contains 1 at% to less than 25 at% Ta, with the balance consisting of Co and unavoidable impurities. A Ta content of less than 25 at% in the sputtering component is advantageous for achieving excellent processability. Additionally, a Ta content of 1 at% or more in the sputtering component is advantageous for utilizing the specific function of Ta (e.g., as a seed layer or diffusion barrier layer). As long as the condition of a Ta content of 1 at% to less than 25 at% is met, the Ta content can be appropriately set according to the application. For example, in another embodiment of the present invention, the sputtering component contains 1 at% to less than 22 at% Ta, with the balance consisting of Co and unavoidable impurities. In yet another embodiment of the present invention, the sputtering component contains 2 at% to less than 20 at% Ta, with the balance consisting of Co and unavoidable impurities. In yet another embodiment of the present invention, the sputtering component contains 2 at% to less than 10 at% Ta, with the balance consisting of Co and unavoidable impurities. A sputtering component according to another embodiment of the present invention contains 10 at% to 22 at% Ta, with the balance consisting of Co and unavoidable impurities. A sputtering component according to yet another embodiment of the present invention contains 15 at% to 22 at% Ta, with the balance consisting of Co and unavoidable impurities.

[0038] Furthermore, in one embodiment of the present invention, the sputtering component contains, in addition to Db, one or more of Group 5 elements of the periodic table, namely V, Nb, and Ta, totaling 1 at% to less than 25 at%, with the balance consisting of Co and unavoidable impurities. The total content of one or more of V, Nb, and Ta in the sputtering component is less than 25 at%, which is advantageous for achieving excellent processability. Furthermore, the total content of one or more of V, Nb, and Ta in the sputtering component is 1 at% or more, which is advantageous for utilizing the specific functions of Group 5 elements of the periodic table (e.g., as a seed layer or diffusion barrier layer). As long as the condition that the total content of one or more of V, Nb, and Ta is 1 at% or more to less than 25 at% is met, the content of each element in V, Nb, and Ta can be appropriately set according to the application. For example, in another embodiment of the present invention, the sputtering component contains, in addition to Db, one or more of V, Nb, and Ta, totaling 1 at% to less than 22 at%, with the balance consisting of Co and unavoidable impurities. In another embodiment of the present invention, the sputtering component contains 2 at% to 20 at% of one or more of V, Nb, and Ta, with the balance consisting of Co and unavoidable impurities. In yet another embodiment of the present invention, the sputtering component contains 2 at% to 10 at% of one or more of V, Nb, and Ta, with the balance consisting of Co and unavoidable impurities. In yet another embodiment of the present invention, the sputtering component contains 10 at% to 22 at% of one or more of V, Nb, and Ta, with the balance consisting of Co and unavoidable impurities. In yet another embodiment of the present invention, the sputtering component contains 15 at% to 22 at% of one or more of V, Nb, and Ta, with the balance consisting of Co and unavoidable impurities.

[0039] Unavoidable impurities refer to impurities that are unavoidably present in the raw materials or mixed in during the manufacturing process. They are not originally desired, but are allowed to exist because they are in trace amounts and do not affect the characteristics of the sputtering component. The total content of unavoidable impurities is preferably 0.5 at% or less, more preferably 0.1 at% or less, and even more preferably 0.05 at% or less.

[0040] (2. Compactness) A sputtering component according to one embodiment of the present invention can have improved density. Improved density means that, when compared between Co-Nb alloys with the same Nb content, or between alloys of Co with the same composition and elements from Group 5 of the periodic table, it has a higher actual density. High density means fewer pores in the sputtering component, which reduces dust adhering to these pores. This is considered beneficial for suppressing particles generated during sputtering. Specifically, the Co-Nb alloy sputtering component according to one embodiment of the present invention can have a density of 8.80 to 9.00 g / cm³. 3 The actual density is preferably 8.85–8.95 g / cm³. 3 The actual density is preferably 8.85–8.90 g / cm³. 3 The actual density. Furthermore, the Co-Ta alloy sputtering component according to one embodiment of the present invention can have a density of 8.80 to 11.50 g / cm³. 3 The actual density is preferably 9.00–11.45 g / cm³. 3 The actual density is preferably 9.50–11.40 g / cm³. 3 The actual density. A sputtering component for an alloy of Co and one or more elements of Group 5 of the periodic table (V, Nb, and Ta) according to one embodiment of the present invention can have a density of 8.10 to 11.50 g / cm³. 3 The actual density is preferably 8.15–11.45 g / cm³. 3 The actual density is more preferably 8.17–11.40 g / cm³. 3 The actual density of the sputtering component is measured according to JIS Z8807:2012, using the liquid weighing method (measuring the temperature of the water used as a standard substance and using the corresponding density as the density of the standard substance). A test piece (4mm × 3mm × 20mm) is cut from any position on the sputtering component for actual density measurement.

[0041] Density can also be evaluated using relative density; generally, the higher the relative density, the higher the density. Specifically, the Co-Nb alloy sputtering component according to one embodiment of the present invention can have a relative density of 99.7% or more, preferably 99.8% or more, and more preferably 100.0% or more. There is no particular upper limit to the relative density, but from the viewpoint of ease of manufacture, it is typically 110% or less, typically 105% or less, and more typically 102% or less. Therefore, the Co-Nb alloy sputtering component according to one embodiment of the present invention, for example, can have a relative density of 99.7% to 110%, preferably 99.8% to 105%, and more preferably 99.8% to 102%. Furthermore, the Co-Ta alloy sputtering component according to one embodiment of the present invention can have a relative density of 99.7% or more, preferably 99.8% or more, and more preferably 100.0% or more. There is no particular upper limit to the relative density, but from the viewpoint of ease of manufacture, it is typically 110% or less, typically 105% or less, and more typically 102% or less. Therefore, the Co-Ta alloy sputtering component according to one embodiment of the present invention can, for example, have a relative density of 99.7% to 110%, preferably 99.8% to 105%, and more preferably 99.8% to 102%. Furthermore, the sputtering component of an alloy of Co and one or more of Group 5 elements (V, Nb, and Ta) according to one embodiment of the present invention can have a relative density of 99.7% or more, preferably 99.8% or more, and more preferably 100% or more. There is no particular upper limit to the relative density, but from the viewpoint of ease of manufacture, it is typically 110% or less, typically 105% or less, and more typically 102% or less. Therefore, the sputtering component of the Co alloy with one or more of the elements in Group 5 of the periodic table (V, Nb and Ta) according to one embodiment of the present invention can, for example, have a relative density of 99.7 to 110%, preferably 99.8 to 105%, and more preferably 99.8 to 102%.

[0042] The relative density of the sputtering component is calculated based on the actual and theoretical densities obtained from the above measurements, using the formula: Relative Density (%) = Actual Density / Theoretical Density × 100. In this invention, the theoretical density of the Co-Nb alloy is calculated based on the densities of pure Co and pure Nb, assuming that Co and Nb exist in the same system without interaction. Similarly, the theoretical density of the Co-Ta alloy is calculated based on the densities of pure Co and pure Ta, assuming that Co and Ta exist in the same system without interaction. Likewise, the theoretical density of the alloy of Co with one or more elements from Group 5 of the periodic table (V, Nb, and Ta) is calculated based on the densities of pure Co and pure elements from Group 5 of the periodic table, assuming that Co and elements from Group 5 of the periodic table exist in the same system without interaction. Therefore, since the presence of intermetallic compounds is not considered, the actual density may sometimes be greater than the theoretical density, i.e., the relative density may sometimes exceed 100%.

[0043] Specifically, regarding the theoretical density of Co-Nb alloys, if the density of Co is chosen to be 8.90 g / cm³... 3 The atomic weight of Co is chosen to be 58.93, and the density of Nb is chosen to be 8.57 g / cm³. 3 The atomic weight of Nb is chosen to be 92.91, and the atomic concentration of Nb in the Co-Nb alloy is denoted as X (at%). Then the theoretical density (g / cm³) is... 3 It is expressed by the following formula.

[0044] Theoretical density = M(X) / V(X) (0 < X ​​< 100) in, Alloy mass M(X) = 58.93 × (100 - X) / 100 + 92.91 × X / 100 The alloy volume V(X) = {58.93 × (100 - X) / 100} / 8.90 + {92.91 × X / 100} / 8.57 In addition, regarding the theoretical density of Co-Ta alloys, if the density of Co is chosen to be 8.90 g / cm³... 3 The atomic weight of Co is chosen to be 58.93, and the density of Ta is chosen to be 16.4 g / cm³. 3 The atomic weight of Ta is chosen to be 180.95, and the atomic concentration of Ta in the Co-Ta alloy is denoted as Y (at%). Then the theoretical density (g / cm³) is... 3 It is expressed by the following formula.

[0045] Theoretical density = M(Y) / V(Y) (0 < Y < 100) in, Alloy mass M(Y) = 58.93 × (100 - Y) / 100 + 180.95 × Y / 100 The alloy volume V(Y) = {58.93 × (100 - Y) / 100} / 8.90 + {180.95 × Y / 100} / 16.4 In addition, regarding the theoretical density of Co-V alloys, if the density of Co is chosen to be 8.90 g / cm³... 3 The atomic weight of Co is chosen to be 58.93, and the density of V is chosen to be 6.0 g / cm³. 3 The atomic weight of V is chosen to be 50.94, and the atomic concentration of V in the Co-V alloy is denoted as Y (at%). Then the theoretical density (g / cm³) is... 3 It is expressed by the following formula.

[0046] Theoretical density = M(Y) / V(Y) (0 < Y < 100) in, Alloy mass M(Y) = 58.93 × (100 - Y) / 100 + 50.94 × Y / 100 The alloy volume V(Y) = {58.93 × (100 - Y) / 100} / 8.90 + {50.94 × Y / 100} / 6.0 For Co alloys containing two or more Group 5 elements of the periodic table, the theoretical density can also be calculated using the same approach described above.

[0047] (3. Metallic phase clusters) In one embodiment of the present invention, a sputtering component for a Co-Nb alloy contains clusters (groups) of Co particles and / or Nb particles dispersed in a particulate form within a matrix phase of an intermetallic compound. Alternatively, clusters (groups) of intermetallic compound particles are dispersed in a particulate form within a Co matrix phase. Furthermore, in one embodiment of the present invention, a sputtering component for a Co-Ta alloy contains clusters (groups) of Co particles and / or Ta particles dispersed in a particulate form within a matrix phase of an intermetallic compound. Alternatively, clusters (groups) of intermetallic compound particles are dispersed in a particulate form within a Co matrix phase. Additionally, in one embodiment of the present invention, a sputtering component for an alloy of Co with one or more of Group 5 elements (V, Nb, and Ta) contains clusters (groups) of one or more of Co particles, V particles, Nb particles, and Ta particles dispersed in a particulate form within a matrix phase of an intermetallic compound. Alternatively, there exists a state in which clusters (groups) of intermetallic compound particles are dispersed in the matrix phase of metallic Co in a granular form.

[0048] In this invention, such clusters are referred to as "metallic phase clusters." Whether the matrix phase is composed of intermetallic compounds or metallic Co depends on the Co concentration. If the Co concentration increases, metallic Co will form the matrix phase. The matrix phase refers to the phase with the largest volume in the alloy. Specific examples of intermetallic compounds include: compounds of Co and Nb (e.g., Co7Nb6, Co2Nb, Co7Nb2), compounds of Co and Ta (e.g., CoTa2, Co2Ta, Co7Ta2), and compounds of Co and V (e.g., Co3V, CoV3), etc.

[0049] When the matrix phase is an intermetallic compound, the composition of the metal phase cluster is influenced by the composition of the sputtering component, and is mainly composed of metal Co.

[0050] The metallic phase clusters are preferably fine-grained. While not intended to limit the invention theoretically, the mechanism by which the presence of fine-grained metallic phase clusters suppresses the generation of microparticles during sputtering has been investigated.

[0051] When the matrix phase is an intermetallic compound, the sputtering rate of Co is relatively high when the proportion of Co in the metal phase clusters is high, as described above. Therefore, if coarse metal phase clusters are present, they will be preferentially etched, resulting in large defects. The intermetallic compounds surrounding these defects are brittle, making them prone to spalling starting from these large defects. Conversely, if the metal phase clusters are dispersed in fine granular form, it is difficult to generate large defects during sputtering, thus reducing the likelihood of spalling. This can be considered as helping to suppress the formation of particles during sputtering.

[0052] Conversely, when the matrix phase is metallic Co, if coarse metallic phase clusters are present, the surrounding Co will be preferentially eroded, leaving these coarse metallic phase clusters as floating islands. The intermetallic compounds constituting these floating islands are relatively brittle, so their flaking leads to the formation of coarse particles. On the other hand, if the metallic phase clusters are finely dispersed, it is difficult to generate coarse particles during sputtering. This can be considered as helping to suppress the particles generated during sputtering.

[0053] The average diameter of the metallic phase cluster is preferably 50 μm or less, more preferably 30 μm or less, and even more preferably 20 μm or less. There is no particular lower limit set for the average diameter of the metallic phase cluster; for example, it can be 0.1 μm or more, 1 μm or more, or 5 μm or more. Therefore, the average diameter of the metallic phase cluster can, for example, be 0.1–50 μm, 1–30 μm, or 5–20 μm.

[0054] The average diameter of the metallic phase clusters was measured according to the following steps. A test piece (10mm × 10mm × 8mm (perpendicular to the sputtering surface)) was cut from any position on the sputtering surface of the sputtering component and polished for mirror finishing. Then, etching was performed using dilute nitric acid (in the case of Co-Nb alloys). For alloys other than Co-Nb (Co-Ta alloys, Co-V alloys, etc.), etching was performed using dilute nitric acid, or a mixture of hydrofluoric acid, nitric acid, and hydrochloric acid, considering the ease of microstructure visualization. Afterwards, in the case of Co-Nb alloys, the test piece was photographed at 200x magnification using an optical microscope from the direction perpendicular to the sputtering surface (see reference). Figure 1 For alloys other than Co-Nb alloys (Co-Ta alloys, Co-V alloys, etc.), although the same optical microscope can be used for observation as for Co-Nb alloys, due to difficulties in distinguishing the phase interface, a scanning electron microscope and a reflection electron detector are used to observe the reflected electron image (COMPO image) of the test piece at 200-500x magnification from the direction perpendicular to the sputtering surface. The obtained images (in the case of Co-Nb alloys, each field of view is 0.3 mm in size) are then analyzed. 2 Except for Co-Nb alloys, a magnification capable of identifying the shapes of various metallic phase clusters observed in a single field of view was selected, and the magnification ranged from 0.02 to 0.5 mm. 2 Within a certain range, the size of each field of view is appropriately adjusted to ensure that the number of metallic phase clusters in each field of view is approximately 100 or more. The image is then converted to grayscale and binarized into white and black regions using the ISODATA method (selecting DefaultIsoData). Next, the black regions are highlighted when the matrix phase is composed of intermetallic compounds, and the white regions are highlighted when the matrix phase is composed of Co. Noise is removed using Open processing (erosion → dilation) with the free software ImageJ (version 1.54f) or equivalent software. After this image processing, the resulting image (refer to...) is... Figure 2 Independent protruding regions within the image are considered as metallic phase clusters, and particle analysis (particle number and area) is performed on each metallic phase cluster. Then, the equivalent diameter of a circle is calculated based on the area of ​​all metallic phase clusters present in the image, and its average value is used as the average diameter of the metallic phase clusters in the image. This area ratio measurement is performed uniformly at 10 locations on the test piece, and the overall average of the average diameters of the metallic phase clusters at these 10 locations is used as the average diameter of the metallic phase clusters in the sputtering component.

[0055] Component analysis using energy-dispersive X-ray diffraction (EDS) confirmed that the white regions could be considered intermetallic compound phases, and the black regions could be considered metallic Co and / or metallic Nb (metallic Ta) phases. Additionally, the metallic V phase was also considered to belong to the black regions.

[0056] If the metallic phase clusters are finely dispersed, the number density of the metallic phase clusters will increase. For example, in one embodiment of the present invention, a sputtering component for an alloy of Co and one or more of Group 5 elements (V, Nb, and Ta), such as a sputtering component for a Co-Nb alloy and a sputtering component for a Co-Ta alloy, has a number density of 5000 clusters / mm calculated by particle analysis performed when determining the average diameter of the aforementioned metallic phase clusters. 2 The preferred value is 10,000 pieces / mm. 2 The above is preferred to be 15,000 pieces / mm. 2 That's all. There's no specific upper limit set for this number density, but based on ease of manufacturing, it's typically 50,000 pieces / mm. 2 The following is a typical count of 30,000 pieces / mm. 2 The following is a more typical example: 20,000 pieces / mm 2 Therefore, the number density of metallic phase clusters can, for example, be 5000 to 50000 clusters / mm². 2 Preferably, the number of particles per mm can be 10,000 to 30,000. 2 More preferably, it can be 15,000 to 20,000 pieces / mm 2 The number density measurement is performed together with the determination of the average diameter of the metallic phase clusters. Therefore, the average number density of the metallic phase clusters in 10 fields of view used to determine the average diameter is used as the number density of the metallic phase clusters in the sputtering component.

[0057] (4. Vickers hardness) A sputtering component according to one embodiment of the present invention can have a lower hardness. Lower hardness means having less hardness when compared to other Co-Nb alloys with the same Nb content, or when comparing alloys of Co with elements of Group 5 of the periodic table with the same composition. From a processability perspective, lower Vickers hardness is better. Specifically, the sputtering component for Co-Nb alloys according to one embodiment of the present invention can have a Vickers hardness (Hv) of 150 to 700, preferably 200 to 600, and more preferably 200 to 450. The sputtering component for Co-Ta alloys according to one embodiment of the present invention can have a Vickers hardness (Hv) of 150 to 1000, preferably 200 to 950, and more preferably 200 to 900. Furthermore, the sputtering component for Co-Ta alloys can have a Vickers hardness (Hv) of 600 to 1000, 600 to 950, or 600 to 900. In one embodiment of the present invention, the sputtering component for an alloy of Co with one or more elements of Group 5 of the periodic table (V, Nb, and Ta) can have a Vickers hardness (Hv) of 150 to 1000, preferably 200 to 950, and more preferably 200 to 900. The Vickers hardness of the sputtering component is measured according to the micro-Vickers hardness test specified in JIS Z2244:2009. Vickers hardness is measured at any location on a sputtering component. The test force is set to 0.2 N, the load time to 4 seconds, and the holding time to 10 seconds. The Vickers hardness is measured evenly at 20 locations, and the average value of the Vickers hardness at the 20 locations is taken as the Vickers hardness of the sputtering component.

[0058] (5. Elongation at break) A sputtering component according to one embodiment of the present invention can have an improved elongation at fracture. An improved elongation at fracture means that, when compared with other Co-Nb alloys having the same Nb content, or when comparing alloys of Co with elements of Group 5 of the periodic table with the same composition, it has a greater elongation at fracture. Because of the large elongation at fracture, the sputtering component is less prone to breakage. Specifically, the Co-Nb alloy sputtering component according to one embodiment of the present invention can have an elongation at fracture of 0.35 to 0.80 mm, preferably 0.38 to 0.80 mm, and more preferably 0.40 to 0.80 mm. Furthermore, the Co-Ta alloy sputtering component according to one embodiment of the present invention can have an elongation at fracture of 0.20 to 0.80 mm, preferably 0.23 to 0.80 mm, and more preferably 0.40 to 0.80 mm. A sputtering component for an alloy of Co and one or more elements of Group 5 of the periodic table (V, Nb, and Ta) according to one embodiment of the present invention may have an elongation at break of 0.20 to 0.80 mm, preferably 0.23 to 0.80 mm, and more preferably 0.40 to 0.80 mm. The elongation at break is measured based on the three-point bending strength test according to JIS R1601:2008. Specifically, a fixed three-point bending test fixture is used, and a three-point bending strength test is performed under the following conditions: distance between support points: 30 mm; specimen size: 3 × 4 × 40 mm; radius of curvature of the support: 5 mm; and beam speed: 0.5 mm / min. The distance the beam descends from the start of applying the bending load to the specimen until the specimen breaks is then used as the elongation at break. The specimen is cut from any position on the sputtering component.

[0059] (6. Sputtering components) The sputtering component according to one embodiment of the present invention can be suitably applied to components required during sputtering. For example, in addition to sputtering target components, it can also be applied to coils such as high-speed focusing coils and high-speed deflection coils that form part of a sputtering apparatus.

[0060] (7. Manufacturing method) The sputtering components described above can be manufactured, for example, by powder sintering. Examples of specific manufacturing methods are described below.

[0061] First, as the metal powder, an alloy powder of Co and one or more elements of Group 5 of the periodic table (V, Nb, and Ta) is prepared, such as Co-Nb alloy powder or Co-Ta alloy powder, with controlled particle size and flowability. Using an alloy powder of Co and Group 5 elements of the periodic table, such as Co-Nb alloy powder or Co-Ta alloy powder, is advantageous for improving density. As the Co-Nb alloy powder, it can be a powder containing Co and Nb at a target content ratio, or the target content ratio can be adjusted by mixing two or more Co-Nb alloy powders with different content ratios. Similarly, as the Co-Ta alloy powder, it can be a powder containing Co and Ta at a target content ratio, or the target content ratio can be adjusted by mixing two or more Co-Ta alloy powders with different content ratios. The same applies to other alloy powders of Co and Group 5 elements of the periodic table. The purity of the prepared metal powder is preferably as high as possible. Since near-spherical powders are readily available, the metal powder is preferably produced by atomization. In atomization methods, metal powders are more preferably produced by gas atomization because rapid cooling can lead to micronization. Furthermore, when the metal powder has a suitable fineness, it is easy to achieve both density and fine dispersion of metallic phase clusters.

[0062] While not intended to limit the invention theoretically, it can be considered that the particle size of the metal powder is related to the density of the sintered body and the characteristics of the generated metal phase clusters in the following ways. First, the finer the metal powder, the smaller the porosity between particles, which is beneficial for improving the density of the sintered body. On the other hand, during sintering, if atoms in the metal powder migrate through surface diffusion, grain boundary diffusion, and bulk diffusion, the generated metal phase clusters will become coarser. Among these, surface diffusion has a particularly high diffusion rate, so it is important to suppress surface diffusion in order to achieve fine dispersion of the metal phase clusters. However, if the metal powder is excessively fine, the specific surface area increases, making surface diffusion more likely to occur during sintering, and the metal phase clusters tend to become coarser. Therefore, in order to simultaneously achieve both the density of the sintered body and the fine dispersion of the metal phase clusters, the metal powder preferably has an appropriate particle size.

[0063] Specifically, the median diameter of the metal powder is preferably in the range of 5 μm to 80 μm or 5 μm to 65 μm, more preferably in the range of 20 μm to 80 μm or 20 μm to 65 μm, and even more preferably in the range of 30 μm to 80 μm or 30 μm to 65 μm. The median diameter refers to the diameter obtained by laser diffraction. The particle size at which the cumulative value based on volume (D50) of the particle size distribution obtained by the scattering method is 50%. In the example, a particle size distribution measuring device, model LA-920, manufactured by Horiba Corporation, was used, and the powder was dispersed in a solvent of pure water for measurement.

[0064] Furthermore, from the viewpoint of improving density and finely dispersing metallic phase clusters, metal powders preferably have high flowability. There is a tendency that the closer the particles constituting the metal powder are to a spherical shape, the higher the flowability. Therefore, as a method to improve the flowability of metal powders, powdering steps utilizing dissolution and spraying, such as gas atomization, can be cited. As an indicator for evaluating the flowability of metal powders, the angle of repose, measured according to the tilt angle method (injection method), is used. The angle of repose is preferably 45° or less, more preferably 40° or less, and even more preferably 35° or less. There is no particularly set lower limit for the angle of repose, but from the viewpoint of ease of acquisition, metal powders with an angle of 15° or more, 20° or more, or 25° or more can be used. Therefore, the angle of repose of the metal powder is, for example, preferably 15–45°, but can also be 20–40°, or 25–35°. The angle of repose can be measured according to the method described in the Powder Engineering Handbook (edited by the Powder Engineering Society), published by Asakura Shoten, first edition, 2014, p.266.

[0065] Next, the prepared metal powder is weighed to ensure that the content of Group 5 elements such as Co and Nb in the periodic table reaches the desired level, and then mixed using a known method such as a V-type mixer to obtain a mixed powder. At this time, it is preferable to fill the container used for mixing with an inert gas to suppress the oxidation of the mixed powder as much as possible.

[0066] The mixed powder obtained through the above steps is then pressurized and sintered under a vacuum or inert gas atmosphere to form a predetermined shape, such as a disc. Hot pressing sintering can be used as the sintering method. Preferably, the mixed powder is filled into a carbon mold and pressurized in a uniaxial direction. In addition to hot pressing, HIP (hot isostatic pressing) can also be performed.

[0067] When mass migration occurs extensively due to pressure and heating, the metallic phase clusters in the sintered body tend to coarsen. Therefore, to ensure density while maintaining fine dispersion of the metallic phase clusters, it is necessary to appropriately set the holding temperature and time during sintering. Specifically, the holding temperature during sintering of the Co-Nb alloy is preferably 900–1220°C, more preferably 1050–1200°C. Furthermore, the holding time within this temperature range is preferably 2–6.5 hours, more preferably 3.5–5 hours. Additionally, the sintering pressure is preferably 15–30 MPa, more preferably 22–30 MPa. Similarly, the holding temperature during sintering of the Co-Ta alloy is preferably 1000–1270°C, more preferably 1100–1250°C. Furthermore, the holding time within this temperature range is preferably 2–6.5 hours, more preferably 3.5–5 hours. Furthermore, the sintering pressure is preferably 15–30 MPa, more preferably 22–30 MPa. Furthermore, the holding temperature during sintering of the Co-V alloy is preferably 850–1200°C, more preferably 900–1150°C. The holding time within this temperature range is preferably 2–6.5 hours, more preferably 3.5–5 hours. Additionally, the sintering pressure is preferably 15–30 MPa, more preferably 22–30 MPa. For Co alloys containing two or more Group 5 elements of the periodic table, the holding temperature, holding time, and pressure can be determined by considering the proportions of each alloying element, as well as the aforementioned holding temperature, holding time, and pressure.

[0068] By shaping the obtained sintered body into the desired shape using a lathe or the like, a sputtering component according to one embodiment of the present invention can be manufactured. When manufacturing a sputtering target component, the shape is not particularly limited; examples include flat plates (including disc-shaped and rectangular plates) and cylindrical shapes. When the sputtering component is flat, for example, one side of the plate may have a diameter of 15 to 2000 cm². 2 The area is preferably 200–1900 cm². 2 The area.

[0069] The sputtering component according to one embodiment of the present invention can also be manufactured by melt casting. Melt casting is suitable for situations where the content of Group 5 elements such as Nb is low. Specifically, the total content of Group 5 elements such as Nb in the sputtering component is preferably 5 at% or less. When using melt casting, a specified amount of raw material ingots (e.g., raw material ingots of Co and Nb or raw material ingots of Co and Ta) are weighed according to the required composition, and melted and alloyed in a VIM (vacuum induction melting furnace) to produce alloy ingots. Next, in order to remove shrinkage cavities, the upper part of the alloy ingot is removed within an appropriate range, and the remaining part is heated to 900°C to 1250°C, typically within the range of 900°C to 1200°C, and then rolled to obtain a plate of a specified thickness. In addition, when manufacturing coils, a method can be used to make a hollow cylindrical alloy ingot using a mold of a specified shape, and then the alloy ingot is machined to obtain a specified shape. Alternatively, an alloy ingot that has been melted and alloyed by VIM can be repeatedly rolled in one direction to obtain a rolled plate, which can then be bent along the length of the rolled plate using bending rollers or the like to form a hollow cylindrical shape before being used to make a coil.

[0070] The sputtering target component can be bonded to a substrate such as a backplate or back tube, and mounted in the sputtering apparatus as a sputtering target assembly, as needed. Alternatively, the sputtering target component can be used directly as a sputtering target and mounted in the sputtering apparatus without a substrate.

[0071] (8. Film-forming methods) In one embodiment of the present invention, a film formation method is provided that includes the step of sputtering using the aforementioned sputtering component. The sputtering conditions can be appropriately set. For example, this film formation method can be used to form a seed layer in a multilayer structure of a magnetic recording medium such as a hard disk drive, or a diffusion barrier layer in a multilayer wiring structure of a semiconductor device.

[0072]

Example

[0073] According to the test number, the above-mentioned raw material powders were weighed so that each one became a component (atomic concentration of Nb) as recorded in Table 1. For Examples 1-4, the components were adjusted using two types of CoNb powders. For Comparative Examples 1 and 2, the components were adjusted using Co powder and Nb powder. Next, the weighed raw material powders were placed in a V-type mixer and mixed under an Ar atmosphere. The results are shown in Table 1.

[0074] Next, the mixed powder removed from the media stirring mill was filled into a carbon mold. The pre-sintering mixed powder filling the mold was disc-shaped, and its dimensions are shown in Table 1. Sintering was then performed in a vacuum atmosphere using hot pressing (HP) with pressure applied in the uniaxial direction. After the holding time at the holding temperature, the mixture was allowed to cool naturally within the chamber. The hot pressing conditions and the dimensions of the sintered bodies are shown in Table 1. It should be noted that only the number of disc-shaped sintered bodies required for the characteristic evaluation described below were produced for each test number.

[0075] (Examples 5-6) As raw material powders, CoTa powder (Ta content 15 at%, median diameter = 68 μm, nominal purity 99.9 at.%) manufactured by gas atomization and CoTa powder (Ta content 20 at%, median diameter = 78 μm, nominal purity 99.9 at.%) manufactured by gas atomization were purchased externally. The median diameter of the raw material powders was obtained using a laser diffraction particle size distribution measuring device (manufacturer: Horiba Seisakusho Co., Ltd., model: LA-920). In addition, to investigate the flowability of the raw material powders, the angle of repose was measured according to the method described above, and the results are shown in Table 1.

[0076] Next, the raw material powder was filled into a carbon mold. The raw material powder before sintering filled into the mold was disc-shaped, and its dimensions are shown in Table 1. Then, sintering was performed in a vacuum atmosphere using hot pressing (HP) with pressure applied in the uniaxial direction. After the holding time at the holding temperature, the material was allowed to cool naturally within the chamber. The hot pressing conditions and the dimensions of the sintered bodies are shown in Table 1. It should be noted that only the number of disc-shaped sintered bodies involved in each test number was produced in accordance with the quantity required for the characteristic evaluation described below.

[0077] <2. Characteristic Evaluation> [Denseness] For the disc-shaped sintered bodies involved in each test number manufactured according to the above steps, the actual density and relative density were measured and calculated according to the method described above. The results are shown in Table 1.

[0078] [Elongation at break] For the disc-shaped sintered bodies involved in each test number manufactured according to the above steps, the elongation at break was measured according to the method described above. The results are shown in Table 1. However, those not measured are indicated by "-".

[0079] [Vickers Hardness] For the disc-shaped sintered bodies involved in each test number manufactured according to the above steps, Vickers hardness was measured according to the method described above. The results are shown in Table 1.

[0080] [Average diameter and number density of metallic phase clusters] For the disc-shaped sintered bodies involved in each test number manufactured according to the above steps, the average diameter and number density of the metallic phase clusters were measured according to the method described above. Specifically, for the Co-Nb alloy, etching was performed with dilute nitric acid, and observation was conducted using an optical microscope at 200x magnification, with each field of view measuring 0.3 mm. 2 Measurements were performed using a method described above. In the case of Co-Ta alloys, etching was performed using a mixture of hydrofluoric acid, nitric acid, and hydrochloric acid. The reflected electron image (COMPO image) was observed at 500x magnification using a scanning electron microscope and a reflectance electron detector, with each field of view measuring 0.04 mm. 2 The measurements were performed using the method described above. It should be noted that in Examples 1-6 and Comparative Examples 1 and 2, the matrix phase consisted of intermetallic compounds. The results are shown in Table 1.

[0081] [Number of particles during sputtering] The disk-shaped sintered bodies of Examples 2 and Comparative Example 2, manufactured according to the steps described above, were processed into the prescribed shape and then mounted on a magnetron sputtering apparatus (Canon Annalb Corporation C-7100 sputtering system) for sputtering. The sputtering conditions were: input power 1 kW, Ar gas flow rate 30 sccm, 3 kWh pre-sputtering, followed by 90 seconds of film deposition on a 12-inch diameter silicon wafer. The number of particles larger than 0.16 μm adhering to the wafer was then measured using a surface foreign matter inspection device (Surfscan SP5, KLA-Tencor). This measurement was performed every time the target lifetime advanced by approximately 3 kWh, up to approximately 27 kWh. The average number of particles measured was used as the measurement value. The results are shown in Table 1.

[0082] Table 1-1

[0083] Table 1-2

[0084] <3. Investigation> According to the results in Table 1, the sintered bodies of Examples 1, 2, and 4 exhibit improved density compared to the sintered bodies of Comparative Examples 1 and 2, which have the same composition. Furthermore, due to the lower Nb content in Example 3, the Vickers hardness is lower, and the workability is improved. Also, due to the lower Nb content, the volume fraction of the intermetallic compounds is lower, making them less prone to cracking. In addition, comparing Example 1 and Example 2, Example 2, with its smaller average diameter of the metallic phase clusters, exhibits greater elongation at break and lower Vickers hardness compared to Example 1. Therefore, the sintered body of Example 2 also possesses the advantageous characteristics of high workability and resistance to cracking. In Examples 5 and 6, where the alloying element was changed from Nb to Ta, dense sintered bodies with a relative density greater than 100% were also obtained.

[0085] According to one embodiment of the present invention, since particulate matter can be suppressed during sputtering, there is a possibility of improving product yield. Improved product yield is associated with promoting a stable supply of products and reducing the loss of metal raw materials, which are finite resources. Therefore, one embodiment of the present invention has the potential to contribute to UN-led Sustainable Development Goals (SDGs) Goal 9, “Building resilient infrastructure, promoting inclusive and sustainable industrialization and advancing innovation,” and Goal 12, “Ensuring sustainable production and consumption patterns.”

Claims

1. A sputtering component containing 1 at% to less than 25 at% Nb, with the balance being Co and unavoidable impurities, having a relative density of 99.7% or higher.

2. The sputtering component as claimed in claim 1, wherein, The actual density is 8.80–9.00 g / cm³. 3 .

3. The sputtering component as claimed in claim 1 or 2, wherein, The Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 700.

4. The sputtering component as claimed in claim 1 or 2, wherein, In the sputtering component, clusters of metal Co particles and / or metal Nb particles are dispersed in a particulate form in the matrix phase of the intermetallic compound, or clusters of intermetallic compound particles are dispersed in a particulate form in the matrix phase of metal Co, and the average diameter of the cluster is 50 μm or less.

5. The sputtering component as claimed in claim 1 or 2, wherein, The elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 was 0.35–0.80 mm.

6. The sputtering component as claimed in claim 1 or 2, wherein, It contains 10 at% to 22 at% of Nb.

7. The sputtering component as claimed in claim 1 or 2, wherein, The components used for sputtering are sputtering target components or coils.

8. A sputtering component containing 1 at% to less than 25 at% Nb, with the balance being Co and unavoidable impurities, wherein... In the sputtering component, clusters of metal Co particles and / or metal Nb particles are dispersed in a particulate form in the matrix phase of the intermetallic compound, or clusters of intermetallic compound particles are dispersed in a particulate form in the matrix phase of metal Co, and the average diameter of the cluster is 50 μm or less.

9. The sputtering component as claimed in claim 8, wherein, The Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 700.

10. The sputtering component as claimed in claim 8 or 9, wherein, The elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 was 0.35–0.80 mm.

11. The sputtering component as claimed in claim 8 or 9, wherein, It contains 10 at% to 22 at% of Nb.

12. The sputtering component as claimed in claim 8 or 9, wherein, The components used for sputtering are sputtering target components or coils.

13. A sputtering component comprising one or more of V, Nb and Ta in total of 1 at% to less than 25 at% and the balance being composed of Co and unavoidable impurities, having a relative density of 99.7% or more.

14. The sputtering component as claimed in claim 13, wherein, The actual density is 8.10–11.50 g / cm³. 3 .

15. The sputtering component as claimed in claim 13 or 14, wherein, The Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 1000.

16. The sputtering component as claimed in claim 13 or 14, wherein, In the sputtering component, clusters of one or more of the following metals—Co, V, Nb, and Ta—are dispersed in particulate form in the matrix phase of an intermetallic compound; or, clusters of intermetallic compound particles are dispersed in particulate form in the matrix phase of Co, and the average diameter of the cluster is 50 μm or less.

17. The sputtering component as claimed in claim 13 or 14, wherein, The elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 was 0.20–0.80 mm.

18. The sputtering component as claimed in claim 13 or 14, wherein, It contains 10 at% to 22 at% of one or more of V, Nb and Ta.

19. The sputtering component as claimed in claim 13 or 14, wherein, The components used for sputtering are sputtering target components or coils.

20. A sputtering component comprising, in aggregate, one or more of V, Nb, and Ta, at a concentration of 1 at% to less than 25 at%, with the balance being Co and unavoidable impurities, wherein, In the sputtering component, clusters of one or more of the following metals—Co, V, Nb, and Ta—are dispersed in particulate form in the matrix phase of an intermetallic compound; or, clusters of intermetallic compound particles are dispersed in particulate form in the matrix phase of Co, and the average diameter of the cluster is 50 μm or less.

21. The sputtering component as claimed in claim 20, wherein, The Vickers hardness (Hv) measured according to the micro Vickers hardness test specified in JIS Z2244:2009 is 150 to 1000.

22. The sputtering component as claimed in claim 20 or 21, wherein, The elongation at break obtained when performing the three-point bending strength test according to JIS R1601:2008 was 0.20–0.80 mm.

23. The sputtering component as claimed in claim 20 or 21, wherein, It contains 10 at% to 22 at% of one or more of V, Nb and Ta.

24. The sputtering component as claimed in claim 20 or 21, wherein, The components used for sputtering are sputtering target components or coils.

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