Metal piece, coating method and electronic equipment
By forming a structure of an underlayer, a transition layer, and an interference layer on a metal substrate, the problem of achieving high-saturation orange color in traditional processes is solved, thus achieving a bright orange effect and color fastness on the appearance of metal parts.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HENAN YUZHAN PRECISION TECH CO LTD
- Filing Date
- 2025-12-05
- Publication Date
- 2026-04-21
AI Technical Summary
Traditional processes struggle to achieve vibrant colors with high saturation and brightness, especially for orange phone bezels.
A structure consisting of an underlayer, a transition layer, and an interference layer is sequentially formed on the surface of a metal substrate. The underlayer and transition layer are composed of chromium, silicon chromate, silicon nitride, and chromium nitride. The interference layer is composed of alternating silicon nitride and silicon hydride layers. A bright orange coating is formed by controlling the thickness of each layer and the sputtering parameters.
This resulted in a vibrant orange finish on the metal parts, enhancing color saturation and colorfastness, and ensuring a uniform and durable coating effect.
Smart Images
Figure CN121896584A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of coating technology, and more particularly to a metal part, a coating method, and an electronic device. Background Technology
[0002] In the consumer electronics industry, the color and texture of a mobile phone's exterior are key factors in enhancing its appeal. For a long time, coloring the phone's bezel, especially achieving vibrant colors with high saturation and brightness, has been a technological challenge. Traditional processes typically only produce relatively conservative, low-saturation colors such as black, white, gray, champagne gold, and rose gold. Vibrant colors like orange are difficult to achieve with traditional processes. Summary of the Invention
[0003] In view of this, this application provides a metal part with an orange appearance and a coating method that can make the appearance of the metal substrate orange.
[0004] The first aspect of this application provides a metal component, the metal component comprising a metal substrate, a base layer, a transition layer, and an interference layer, wherein the base layer covers the surface of the metal substrate, the transition layer covers the surface of the base layer opposite to the surface of the metal substrate, and the interference layer covers the surface of the transition layer opposite to the surface of the base layer, the interference layer comprising alternating silicon nitride layers and silicon hydride layers.
[0005] In some embodiments, the material of the underlayer includes chromium, and the material of the transition layer includes silicon chromate, silicon nitride, and chromium nitride.
[0006] In some embodiments, the interference layer includes a first interference layer, a second interference layer, a third interference layer, a fourth interference layer, and a fifth interference layer stacked sequentially. The first interference layer covers the surface of the transition layer away from the underlayment. The second, third, fourth, and fifth interference layers are stacked sequentially on the surface of the first interference layer away from the transition layer. The first and third interference layers include silicon nitride, the second and fourth interference layers include silicon hydride, and the fifth interference layer includes silicon chromide, silicon nitride, and chromium nitride.
[0007] In some embodiments, the thickness n1 of the underlay layer is 0.5 μm to 0.7 μm, the sum of the thicknesses of the underlay layer and the transition layer n2 is 0.71 μm to 0.9 μm, and the sum of the thicknesses of the underlay layer, the transition layer, and the interference layer n3 is 0.91 μm to 1.21 μm.
[0008] In some embodiments, the thickness d1 of the first interference layer is 0.05 μm to 0.1 μm, the thickness d2 of the second interference layer is 0.05 μm to 0.1 μm, the thickness d3 of the third interference layer is 0.05 μm to 0.1 μm, the thickness d4 of the fourth interference layer is 0.05 μm to 0.1 μm, the thickness d5 of the fifth interference layer is 0.05 μm to 0.1 μm, and the thickness ratio of the first interference layer to the fourth interference layer is 1:0.6 to 0.8.
[0009] A second aspect of this application provides a coating method, comprising the following steps: Provide metal substrates; An underlayer is formed on the surface of the metal substrate; A transition layer is formed on the surface of the underlayer that is opposite to the metal substrate. In a coating apparatus equipped with a silicon target, two sets of gases, nitrogen and inert gas, and hydrogen and inert gas, are alternately introduced to form an interference layer on the surface of the transition layer away from the metal substrate. The interference layer includes alternating silicon nitride and silicon hydrogen layers.
[0010] In some embodiments, the step of “forming an underlayer on the surface of the metal substrate” includes: placing the metal substrate in a coating apparatus, introducing an inert gas into the coating apparatus at a rate of 294 sscm to 306 sscm, controlling the sputtering power of the chromium target in the coating apparatus to be 7 kW to 9 kW, forming the underlayer on the surface of the metal substrate, and forming the underlayer for a time of 3500 s to 3700 s.
[0011] In some embodiments, the step of "forming a transition layer on the surface of the underlayer away from the metal substrate" includes: introducing nitrogen and inert gas into the coating equipment at rates of 45 sscm~55 sscm and 294 sscm~306 sscm respectively, controlling the sputtering power of the chromium target to be 11 kW~13 kW, controlling the sputtering power of the silicon target to be 9 kW~11 kW, depositing the transition layer on the surface of the underlayer away from the metal substrate, and forming the transition layer in a time of 11800s~12200s.
[0012] In some embodiments, the interference layer includes a first interference layer, a second interference layer, a third interference layer, a fourth interference layer, and a fifth interference layer stacked sequentially, and the method steps for forming the interference layer include: Nitrogen and inert gas are introduced into the coating equipment at rates of 140sscm~160sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled at 14 kW~16 kW. The first interference layer is deposited on the surface of the transition layer away from the underlayer, and the time for forming the first interference layer is 3200s~3900s. Hydrogen and inert gas are introduced into the coating equipment at rates of 90sscm~110sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 9kW~11kW. The second interference layer is deposited on the surface of the first interference layer away from the transition layer, and the time for forming the second interference layer is 3000s~3800s. Nitrogen and inert gas are introduced into the coating equipment at rates of 140sscm~160sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 14 kW~16 kW. The third interference layer is deposited on the surface of the second interference layer away from the first interference layer, and the time for forming the third interference layer is 900s~1600s. Hydrogen and inert gas are introduced into the coating equipment at rates of 90sscm~110sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 9 kW~11kW. The fourth interference layer is deposited on the surface of the third interference layer away from the second interference layer, and the time for forming the fourth interference layer is 2000s~3000s. Nitrogen and inert gas are introduced into the coating equipment at rates of 120 sscm~160 sscm and 294 sscm~306 sscm respectively. The sputtering power of the silicon target is controlled at 8 kW~10 kW, and the sputtering power of the chromium target is controlled at 3 kW~5 kW. The fifth interference layer is deposited on the surface of the fourth interference layer away from the third interference layer, and the time for forming the fifth interference layer is 1900 s~2700 s.
[0013] A third aspect of this application provides an electronic device comprising the aforementioned metal component.
[0014] The metal part of this application has a base layer, a transition layer and an interference layer sequentially formed on the surface of the metal substrate. The base layer enhances the bonding strength between the metal substrate and the transition layer. The transition layer provides a background color to better present the color of the interference layer. The interference layer contains alternating silicon nitride and silicon hydride layers, which enables the metal part to appear orange and enhances the color saturation of orange, helping the metal part to achieve a bright orange overall appearance. Attached Figure Description
[0015] Figure 1 This is a cross-sectional schematic diagram of a metal part provided in one embodiment of this application.
[0016] Figure 2 This is a schematic diagram of a coating method provided in one embodiment of this application.
[0017] Explanation of main component symbols: metal part 100, metal substrate 10, underlayer 20, transition layer 30, interference layer 40, first interference layer 41, second interference layer 42, third interference layer 43, fourth interference layer 44, fifth interference layer 45.
[0018] The following detailed description, in conjunction with the accompanying drawings, will further illustrate this application. Detailed Implementation
[0019] The embodiments of this application are described in detail below. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. The reagents and materials described in the following embodiments are all commercially available.
[0020] To better understand the above-mentioned objectives, features, and advantages of the embodiments of this application, the application will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, unless otherwise specified, the features in the embodiments of this application can be combined with each other.
[0021] The following description sets forth numerous specific details to provide a thorough understanding of the embodiments of this application. The described implementations are only a portion, not all, of the embodiments described herein. All other implementations obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of the embodiments of this application.
[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which embodiments of this application belong. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of this application.
[0023] Please see Figure 1 This application provides a metal component 100, which includes a metal substrate 10, a base layer 20, a transition layer 30, and an interference layer 40. The base layer 20 covers the surface of the metal substrate 10, the transition layer 30 covers the surface of the base layer 20 away from the surface of the metal substrate 10, and the interference layer 40 covers the surface of the transition layer 30 away from the surface of the base layer 20. The interference layer 40 includes alternating silicon nitride layers and silicon hydride layers.
[0024] In the metal part 100 of this application, a base layer 20, a transition layer 30 and an interference layer 40 are sequentially provided on the surface of the metal substrate 10. The base layer 20 plays a role in improving the bonding strength between the metal substrate 10 and the transition layer 30. The transition layer 30 provides a background color so that the color of the interference layer 40 can be better presented. The interference layer 40 contains alternating silicon nitride layers and silicon hydride layers, which can make the metal part 100 appear orange and improve the orange color saturation, helping the metal part 100 to achieve a bright orange overall appearance.
[0025] In some embodiments, the underlayer 20 comprises chromium, and the transition layer 30 comprises silicon chromate, silicon nitride, and chromium nitride. Chromium can improve the adhesion of the transition layer 30 to its surface, thereby improving the overall bright orange color fastness of the metal substrate 10. The mixture of silicon chromate, silicon nitride, and chromium nitride is gray and can provide a background color for the coating to better showcase the color of the interference layer 40.
[0026] In some embodiments, the interference layer 40 includes a first interference layer 41, a second interference layer 42, a third interference layer 43, a fourth interference layer 44, and a fifth interference layer 45 stacked sequentially. The first interference layer 41 covers the transition layer 30 away from the surface of the underlayment 20. The second interference layer 42, the third interference layer 43, the fourth interference layer 44, and the fifth interference layer 45 are stacked sequentially on the surface of the first interference layer 41 away from the transition layer 30. The first interference layer 41 and the third interference layer 43 include silicon nitride, the second interference layer 42 and the fourth interference layer 44 include silicon hydride, and the fifth interference layer 45 includes silicon chromium nitride, silicon nitride, and chromium nitride. Through the layering of the first interference layer 41 to the fourth interference layer 44, the bright orange coating color on the surface of the metal substrate 10 can be made fuller and more uniform, and the fifth interference layer 45 further ensures the durability of the coating color.
[0027] In some embodiments, the thickness n1 of the underlayer 20 is 0.5 μm to 0.7 μm, the sum of the thicknesses n2 of the underlayer 20 and the transition layer 30 is 0.71 μm to 0.9 μm, and the sum of the thicknesses n3 of the underlayer 20, the transition layer 30, and the interference layer 40 is 0.91 μm to 1.21 μm. Having the thicknesses of the underlayer 20, the transition layer 30, and the interference layer 40 within the above ranges is beneficial for making the final color of the metal part 100 closer to a bright orange, and it can reduce the risk of the underlayer 20, the transition layer 30, and the interference layer 40 detaching from the metal substrate 10.
[0028] For example, the thickness n1 of the underlayer 20 can be 0.5μm, 0.52μm, 0.55μm, 0.58μm, 0.6μm, 0.62μm, 0.65μm, 0.68μm, 0.7μm, or any value within the range of any two of the above values; the sum of the thicknesses n2 of the underlayer 20 and the transition layer 30 can be 0.71μm, 0.73μm, 0.75μm, 0.78μm, 0.8μm, 0.82μm, 0.85μm, 0.88μm, 0. The thickness n3 of the base layer 20, the transition layer 30, and the interference layer 40 can be 0.91μm, 0.93μm, 0.95μm, 0.98μm, 1.0μm, 1.03μm, 1.05μm, 1.08μm, 1.1μm, 1.12μm, 1.14μm, 1.16μm, 1.18μm, 1.20μm, 1.21μm, or any value within the range of any two of the above values.
[0029] In some embodiments, the thickness d1 of the first interference layer 41 is 0.04 μm to 0.1 μm, the thickness d2 of the second interference layer 42 is 0.04 μm to 0.1 μm, the thickness d3 of the third interference layer 43 is 0.04 μm to 0.1 μm, the thickness d4 of the fourth interference layer 44 is 0.04 μm to 0.1 μm, the thickness d5 of the fifth interference layer 45 is 0.04 μm to 0.1 μm, and the thickness ratio of the first interference layer 41 to the fourth interference layer 44 is 1:0.6 to 0.8.
[0030] For example, the thickness d1 of the first interference layer 41 can be 0.04 μm, 0.05 μm, 0.06 μm, 0.07 μm, 0.08 μm, 0.09 μm, 0.1 μm, or any value within the range of any two of the above values. The thickness d2 of the second interference layer 42 can be 0.04 μm, 0.05 μm, 0.06 μm, 0.07 μm, 0.08 μm, 0.09 μm, 0.1 μm, or any value within the range of any two of the above values. The thickness d3 of the third interference layer 43 can be 0.04 μm, 0.05 μm, 0.06 μm, 0.07 μm, 0.08 μm, 0.09 μm, 0.1 μm, or any value within the range of any two of the above values. The thickness d4 of the fourth interference layer 44 can be 0.04 μm, 0.05 μm, 0.06 μm, 0.07 μm, 0.08 μm, 0.09 μm, 0.1 μm, or any value within the range of any two of the above values. The thickness d5 of the fifth interference layer 45 can be 0.04 μm, 0.05 μm, 0.06 μm, 0.07 μm, 0.08 μm, 0.09 μm, 0.1 μm, or any value within the range of any two of the above values. The thickness ratio of the first interference layer 41 to the fourth interference layer 44 can be 1:0.6, 1:0.65, 1:0.7, 1:0.75, 1:0.8, or any value within the range of any two of the above values.
[0031] Please refer to the following: Figure 1 and Figure 2 This application provides a coating method, comprising the following steps: S1: Provides a metal substrate 10; S2: Forming an underlayer 20 on the surface of the metal substrate 10; S3: A transition layer 30 is formed on the surface of the underlayer 20 that is away from the metal substrate 10; S4: In a coating apparatus equipped with a silicon target, nitrogen and inert gas, and hydrogen and inert gas are alternately introduced to form an interference layer 40 on the surface of the transition layer 30 away from the metal substrate 10. The interference layer 40 includes alternating silicon nitride layers and silicon hydrogenation layers.
[0032] In this application, a base layer 20, a transition layer 30, and an interference layer 40 are sequentially formed on the surface of a metal substrate 10. The base layer 20 enhances the bonding strength between the metal substrate 10 and the transition layer 30. The transition layer 30 provides a background color to better present the color of the interference layer 40. The interference layer 40 contains alternating silicon nitride and silicon hydride layers, which enables the metal part 100 to appear orange and enhances the saturation of the orange color, helping the metal part 100 to achieve a bright orange overall appearance.
[0033] In some embodiments, the metal substrate 10 includes at least one of stainless steel or titanium. Using this coating method, the stainless steel or titanium substrate can exhibit a better high-saturation orange appearance.
[0034] In some embodiments, the underlayer 20 comprises chromium, and the transition layer 30 comprises silicon chromate, silicon nitride, and chromium nitride. Chromium can improve the adhesion of the transition layer 30 to its surface, thereby improving the overall bright orange color fastness of the metal substrate 10. The mixture of silicon chromate, silicon nitride, and chromium nitride is gray and can provide a background color for the coating to better showcase the color of the interference layer 40.
[0035] In some embodiments, the interference layer 40 includes a first interference layer 41, a second interference layer 42, a third interference layer 43, a fourth interference layer 44, and a fifth interference layer 45 stacked sequentially. The first interference layer 41 covers the surface of the transition layer 30 facing away from the underlayment 20. The second interference layer 42, the third interference layer 43, the fourth interference layer 44, and the fifth interference layer 45 are stacked sequentially on the surface of the first interference layer 41 facing away from the transition layer 30. The first interference layer 41 and the third interference layer 43 comprise silicon nitride, the second interference layer 42 and the fourth interference layer 44 comprise silicon hydride, and the fifth interference layer 45 comprises silicon chromide, silicon nitride, and chromium nitride. Through the layering of the first interference layer 41 to the fourth interference layer 44, the bright orange coating color on the surface of the metal substrate 10 can be made fuller and more uniform, and the fifth interference layer 45 further ensures the durability of the coating color.
[0036] In some embodiments, the step of “forming an underlayer 20 on the surface of the metal substrate 10” includes: placing the metal substrate 10 in a coating apparatus, introducing an inert gas into the coating apparatus at a rate of 294 sscm to 306 sscm, controlling the sputtering power of the chromium target in the coating apparatus to be 7 kW to 9 kW, forming an underlayer 20 on the surface of the metal substrate 10, and forming the underlayer 20 for a time of 3500s to 3700s.
[0037] For example, the inert gas flow rate can be 294 sscm, 296 sscm, 298 sscm, 300 sscm, 302 sscm, 304 sscm, 306 sscm, or any value within the range of any two of the above values; the sputtering power of the chromium target can be 7 kW, 8 kW, 9 kW, or any value within the range of any two of the above values; the time for forming the underlayer 20 can be 3500 s, 3550 s, 3600 s, 3650 s, 3700 s, or any value within the range of any two of the above values. When the gas flow rate, the sputtering power of the chromium target, and the time are within the above ranges, the underlayer 20 can be formed more uniformly on the surface of the metal substrate 10, resulting in a more robust and wear-resistant coating on the final surface of the metal substrate 10.
[0038] In some embodiments, the step of “forming a transition layer 30 on the surface of the underlayer 20 away from the metal substrate 10” includes: introducing nitrogen and inert gas into the coating equipment at rates of 45 sscm to 55 sscm and 294 sscm to 306 sscm respectively, controlling the sputtering power of the chromium target to be 11 kW to 13 kW, controlling the sputtering power of the silicon target to be 9 kW to 11 kW, depositing and forming the transition layer 30 on the surface of the underlayer 20 away from the metal substrate 10, and forming the transition layer 30 in a time of 11800s to 12200s.
[0039] For example, the nitrogen gas introduction rate can be 45 sscm, 48 sscm, 50 sscm, 52 sscm, 55 sscm, or any value within the range of any two of the above values; the inert gas introduction rate can be 294 sscm, 296 sscm, 298 sscm, 300 sscm, 302 sscm, 304 sscm, 306 sscm, or any value within the range of any two of the above values; the sputtering power of the chromium target can be 11 kW, 12 kW, 13 kW, or any value within the range of any two of the above values; the sputtering power of the silicon target can be 9 kW, 10 kW, 11 kW, or any value within the range of any two of the above values; the time for forming the transition layer 30 can be 11800 s, 11900 s, 12000 s, 12100 s, 12200 s, or any value within the range of any two of the above values. When the gas flow rate, sputtering power of the chromium target and silicon target, and time are within the above range when the transition layer 30 is formed on the surface of the base layer 20 away from the metal substrate 10, the transition layer 30 can be formed more uniformly, which is beneficial to providing a good foundation for the subsequent formation of a bright orange appearance effect.
[0040] In some embodiments, the method steps for forming the interference layer 40 include: (1) Nitrogen and inert gas are introduced into the coating equipment at rates of 140sscm~160sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 14 kW~16kW. The first interference layer 41 is deposited on the surface of the transition layer 30 away from the underlayment 20, and the time for forming the first interference layer 41 is 3200s~3900s. For example, the nitrogen gas introduction rate in this step can be 140 sscm, 145 sscm, 150 sscm, 155 sscm, 160 sscm, or any value within the range of any two of the above values; the inert gas introduction rate can be 294 sscm, 296 sscm, 298 sscm, 300 sscm, 302 sscm, 304 sscm, 306 sscm, or any value within the range of any two of the above values; the silicon target sputtering power can be 14 kW, 15 kW, 16 kW, or any value within the range of any two of the above values; and the time for forming the first interference layer 41 can be 3200 s, 3300 s, 3400 s, 3500 s, 3600 s, 3700 s, 3800 s, 3900 s, or any value within the range of any two of the above values. (2) Hydrogen and inert gas are introduced into the coating equipment at rates of 90sscm~110sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 9kW~11kW. A second interference layer 42 is deposited on the surface of the first interference layer 41 away from the transition layer 30, and the time for forming the second interference layer 42 is 3000s~3800s. For example, the rate at which hydrogen is introduced in this step can be 90 sscm, 95 sscm, 100 sscm, 105 sscm, 110 sscm, or any value within the range of any two of the above values; the rate at which inert gas is introduced can be 294 sscm, 296 sscm, 298 sscm, 300 sscm, 302 sscm, 304 sscm, 306 sscm, or any value within the range of any two of the above values; the sputtering power of the silicon target can be 9 kW, 10 kW, 11 kW, or any value within the range of any two of the above values; and the time for forming the second interference layer 42 can be 3000 s, 3100 s, 3200 s, 3300 s, 3400 s, 3500 s, 3600 s, 3700 s, 3800 s, or any value within the range of any two of the above values. (3) Nitrogen and inert gas are introduced into the coating equipment at rates of 140 sscm~160 sscm and 294 sscm~306 sscm respectively, and the sputtering power of the silicon target is controlled to be 14 kW~16 kW. A third interference layer 43 is deposited on the surface of the second interference layer 42 away from the first interference layer 41. The time for forming the third interference layer 43 is 900 s~1600 s. For example, the rate of introducing inert gas in this step can be 294 sscm, 296 sscm, 298 sscm, 300 sscm, 302 sscm, 304 sscm, 306 sscm or any value within the range of any two of the above values. The rate of introducing nitrogen can be 140 sscm, 145 sscm, 150 sscm, 155 sscm, 155 sscm, 14 ... The sputtering power of the silicon target can be 14 kW, 15 kW, 16 kW, or any value within the range of any two of the above values. The time for forming the third interference layer 43 can be 900 s, 1000 s, 1100 s, 1200 s, 1300 s, 1400 s, 1500 s, 1600 s, or any value within the range of any two of the above values. (4) Hydrogen and inert gas are introduced into the coating equipment at rates of 90 sscm~110 sscm and 294 sscm~306 sscm respectively, and the sputtering power of the silicon target is controlled to be 9 kW~11 kW. A fourth interference layer 44 is deposited on the surface of the third interference layer 43 away from the second interference layer 42. The time for forming the fourth interference layer 44 is 2000s~3000s. For example, the rate of hydrogen introduction in this step can be 90 sscm, 95 sscm, 100 sscm, 105 sscm, 110 sscm or any value within the range of any two of the above values. The rate of inert gas introduction can be 294 sscm, 296 sscm, 298 sscm, 300 sscm, 302 sscm, 304 sscm, 306 sscm or any value within the range of any two of the above values. The sputtering power of the silicon target is 9 kW, 10 kW, 11 kW, 9 ... The time for forming the fourth interference layer 44 can be 2000s, 2100s, 2200s, 2300s, 2400s, 2500s, 2600s, 2700s, 2800s, 2900s, 3000s, or any value within the range of any two of the above values; (5) Nitrogen and inert gas are introduced into the coating equipment at rates of 120 sscm~160 sscm and 294 sscm~306 sscm respectively. The sputtering power of the silicon target is controlled at 8 kW~10 kW, and the sputtering power of the chromium target is controlled at 3 kW~5 kW. A fifth interference layer 45 is deposited on the surface of the fourth interference layer 44 away from the third interference layer 43. The time for forming the fifth interference layer 45 is 1900 s~2700 s. For example, the nitrogen gas introduction rate in this step can be 120 sscm, 130 sscm, 140 sscm, 150 sscm, 160 sscm or any value within the range of any two of the above values. The inert gas introduction rate can be 294 sscm, 296 sscm, 298 sscm or 298 sscm. The sputtering power of silicon targets can be 8 kW, 9 kW, or 10 kW, and the sputtering power of chromium targets can be 3 kW, 4 kW, or 5 kW, or any value within the range of any two of the above values.
[0041] In some embodiments, during the coating process, the bias voltage of the coating equipment is 142.5V to 157.5V, and the duty cycle of the coating equipment is 48% to 52%. For example, the bias voltage of the coating equipment can be 142.5V, 146V, 150V, 155V, 157.5V, or any value within the range of any two of the above values; the duty cycle of the coating equipment can be 48%, 49%, 50%, 51%, 52%, or any value within the range of any two of the above values. Having the bias voltage and duty cycle of the coating equipment within the above range helps to improve the adhesion of the coating on the surface of the metal substrate 10.
[0042] In some embodiments, high-purity hydrogen, such as hydrogen with a purity of 99.99%, can be used. The flow rate of hydrogen gas entering the coating equipment can be precisely controlled by a flow meter to improve the absorption rate of the second interference layer 42 and the fourth interference layer 44, further enhancing the color saturation of orange and making the orange brighter and more vibrant. High-purity hydrogen can be produced using a pure water-type hydrogen generator.
[0043] The present application will be specifically described below through specific embodiments.
[0044] Example 1 Example 1 provides a metal part 100, which includes a metal substrate 10, a base layer 20, a transition layer 30, and an interference layer 40. The base layer 20 covers the surface of the metal substrate 10, the transition layer 30 covers the surface of the base layer 20 opposite to the surface of the metal substrate 10, and the interference layer 40 covers the surface of the transition layer 30 opposite to the surface of the base layer 20.
[0045] The interference layer 40 includes a first interference layer 41, a second interference layer 42, a third interference layer 43, a fourth interference layer 44, and a fifth interference layer 45 stacked sequentially. The first interference layer 41 covers the transition layer 30 away from the surface of the base layer 20, and the second interference layer 42, the third interference layer 43, the fourth interference layer 44, and the fifth interference layer 45 are stacked sequentially on the surface of the first interference layer 41 away from the surface of the transition layer 30.
[0046] The underlayer 20 comprises chromium, and the transition layer 30 comprises silicon chromide, silicon nitride, and chromium nitride. The first interference layer 41 and the third interference layer 43 comprise silicon nitride, the second interference layer 42 and the fourth interference layer 44 comprise silicon hydride, and the fifth interference layer 45 comprises silicon chromide, silicon nitride, and chromium nitride. The thickness n1 of the underlayer 20 is 0.6 μm, the sum of the thicknesses of the underlayer 20 and the transition layer 30 is n2, which is 0.8 μm, and the sum of the thicknesses of the underlayer 20, the transition layer 30, and the interference layer 40 is n3, which is 0.95 μm.
[0047] The method for preparing the metal part 100 includes the following steps: S1: Clean the surface of the stainless steel substrate to remove impurities and dirt, and then place the stainless steel substrate into a vacuum coating machine. S2: Argon gas is introduced into the vacuum coating apparatus at a rate of 300 sscm. The sputtering power of the chromium target is 8 kW, the bias voltage of the vacuum coating apparatus is 150V, and the duty cycle is 50%. Physical vapor deposition is performed for 3600 s, forming an underlayer 20 on the surface of the metal substrate 10. In subsequent steps, the bias voltage and duty cycle of the vacuum coating apparatus remain unchanged.
[0048] S3: The rate of argon gas introduction remains constant, while nitrogen gas is introduced into the vacuum coating instrument at a rate of 50 sscm. The sputtering power of the chromium target is 12 kW, and the sputtering power of the silicon target is 10 kW. This process is maintained for 12000 s, forming a transition layer 30 on the surface of the underlayer 20 away from the metal substrate 10.
[0049] S401: The rate of argon gas introduction remains constant, and nitrogen gas is introduced into the vacuum coating instrument at a rate of 150 sscm. The sputtering power of the silicon target is 15 kW. This process is maintained for 3500 s. A first interference layer 41 is formed on the surface of the transition layer 30 away from the metal substrate 10. The first interference layer 41 includes silicon nitride.
[0050] S402: The rate of argon gas introduction remains constant, nitrogen gas introduction is stopped, and hydrogen gas is introduced into the vacuum coating instrument at a rate of 100 sscm. The sputtering power of the silicon target is 10 kW. This process is maintained for 3355 s. A second interference layer 42 is formed on the surface of the first interference layer 41 away from the transition layer 30. The second interference layer 42 includes silicon hydrogenation.
[0051] S403: The rate of argon gas introduction remains constant, hydrogen gas introduction is stopped, and nitrogen gas is introduced into the vacuum coating instrument at a rate of 150 sscm. The sputtering power of the silicon target is 15 kW. This process is maintained for 1260 s. A third interference layer 43 is formed on the surface of the second interference layer 42 away from the first interference layer 41. The third interference layer 43 includes silicon nitride.
[0052] S404: The rate of argon gas introduction remains constant, nitrogen gas introduction is stopped, and hydrogen gas is introduced into the vacuum coating instrument at a rate of 100 sscm. The sputtering power of the silicon target is 10 kW. This process is maintained for 2540 s. A fourth interference layer 44 is formed on the surface of the third interference layer 43 away from the second interference layer 42. The fourth interference layer 44 includes silicon hydride.
[0053] S405: The argon gas flow rate remains constant, hydrogen gas flow is stopped, and nitrogen gas is introduced into the vacuum coating instrument at a rate of 140 sscm. The sputtering power of the chromium target is 4 kW, and the sputtering power of the silicon target is 9 kW. This process is maintained for 2290 s. A fifth interference layer 45 is formed on the surface of the fourth interference layer 44 away from the third interference layer 43. The fifth interference layer 45 includes silicon chromide, silicon nitride, and chromium nitride.
[0054] Examples 2-4 The differences between the preparation methods of Examples 2 to 4 and Example 1 are shown in Tables 1 and 2, and the rest are the same as those of Example 1.
[0055] Comparative Example 1 The difference between Comparative Example 1 and Example 1 is that hydrogen in Example 1 is replaced with acetylene, and the rest is the same as in Example 1.
[0056] Table 1 Table 2 In Tables 1 and 2, " / " indicates that the preparation parameter is not present.
[0057] Performance Testing Thickness: Tested using a PVD ball mill.
[0058] Color saturation: Color difference testing was performed using MatrixOD software, primarily based on the Lab principle of the CIE color space, to analyze and obtain the L, a, and b values of the coating. When the L, a, and b values of the coating satisfy 59.94≤L≤60.54, 36.6≤a≤37.2, and 50.74≤b≤51.34, it indicates that the coating can exhibit a bright orange appearance. When the L, a, and b values of the coating do not meet the above ranges, it indicates that the coating cannot exhibit a bright orange appearance.
[0059] The test results of Examples 1 to 4 and Comparative Example 1 are shown in Table 3.
[0060] Table 3 As can be seen from Tables 1 to 3, compared with Comparative Example 1, the coatings prepared in Examples 1 to 4 can all exhibit a bright orange color effect, while Comparative Example 1 uses acetylene, and the coating prepared cannot exhibit a bright orange color.
[0061] The above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions to the technical solutions of this application should not depart from the spirit and scope of the technical solutions of this application.
Claims
1. A metal part, characterized in that, include: Metal substrate; Apply a base coat, covering the surface of the metal substrate; A transition layer is applied to the surface of the underlayer that faces away from the metal substrate. as well as An interference layer covers the surface of the transition layer opposite to the underlayer, the interference layer comprising alternating silicon nitride and silicon hydride layers.
2. The metal part as described in claim 1, characterized in that, The underlayer comprises chromium, and the transition layer comprises silicon chromide, silicon nitride, and chromium nitride.
3. The metal part as described in claim 1, characterized in that, The interference layer comprises a first interference layer, a second interference layer, a third interference layer, a fourth interference layer, and a fifth interference layer stacked sequentially. The first interference layer covers the surface of the transition layer away from the underlayment. The second, third, fourth, and fifth interference layers are stacked sequentially on the surface of the first interference layer away from the transition layer. The first and third interference layers comprise silicon nitride, the second and fourth interference layers comprise silicon hydride, and the fifth interference layer comprises silicon chromide, silicon nitride, and chromium nitride.
4. The metal part as described in claim 1, characterized in that, The thickness n1 of the underlay layer is 0.5μm~0.7μm, the sum of the thicknesses of the underlay layer and the transition layer n2 is 0.71μm~0.9μm, and the sum of the thicknesses of the underlay layer, the transition layer and the interference layer n3 is 0.91μm~1.21μm.
5. The metal part as described in claim 3, characterized in that, The thickness d1 of the first interference layer is 0.04 μm to 0.1 μm, the thickness d2 of the second interference layer is 0.04 μm to 0.1 μm, the thickness d3 of the third interference layer is 0.04 μm to 0.1 μm, the thickness d4 of the fourth interference layer is 0.04 μm to 0.1 μm, the thickness d5 of the fifth interference layer is 0.04 μm to 0.1 μm, and the thickness ratio of the first interference layer to the fourth interference layer is 1:0.6 to 0.
8.
6. A coating method for a metal part as described in any one of claims 1 to 5, characterized in that, Includes the following steps: Provide metal substrates; An underlayer is formed on the surface of the metal substrate; A transition layer is formed on the surface of the underlayer that is opposite to the metal substrate. In a coating apparatus equipped with a silicon target, two sets of gases, nitrogen and inert gas, and hydrogen and inert gas, are alternately introduced to form an interference layer on the surface of the transition layer away from the metal substrate. The interference layer includes alternating silicon nitride and silicon hydrogen layers.
7. The coating method as described in claim 6, characterized in that, The step of "forming an underlayer on the surface of the metal substrate" includes: placing the metal substrate in a coating equipment, introducing an inert gas into the coating equipment at a rate of 294 sscm to 306 sscm, controlling the sputtering power of the chromium target in the coating equipment to be 7 kW to 9 kW, forming the underlayer on the surface of the metal substrate, and forming the underlayer for a time of 3500s to 3700s.
8. The coating method as described in claim 7, characterized in that, The step of "forming a transition layer on the surface of the underlayer away from the metal substrate" includes: introducing nitrogen and inert gas into the coating equipment at rates of 45sscm~55sscm and 294sscm~306sscm respectively, controlling the sputtering power of the chromium target to be 11 kW~13 kW, controlling the sputtering power of the silicon target to be 9 kW~11 kW, depositing the transition layer on the surface of the underlayer away from the metal substrate, and forming the transition layer in a time of 11800s~12200s.
9. The coating method as described in claim 7, characterized in that, The interference layer comprises a first interference layer, a second interference layer, a third interference layer, a fourth interference layer, and a fifth interference layer stacked sequentially, and the method steps for forming the interference layer include: Nitrogen and inert gas are introduced into the coating equipment at rates of 140sscm~160sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled at 14 kW~16 kW. The first interference layer is deposited on the surface of the transition layer away from the underlayer, and the time for forming the first interference layer is 3200s~3900s. Hydrogen and inert gas are introduced into the coating equipment at rates of 90sscm~110sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 9kW~11kW. The second interference layer is deposited on the surface of the first interference layer away from the transition layer, and the time for forming the second interference layer is 3000s~3800s. Nitrogen and inert gas are introduced into the coating equipment at rates of 140sscm~160sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 14 kW~16 kW. The third interference layer is deposited on the surface of the second interference layer away from the first interference layer, and the time for forming the third interference layer is 900s~1600s. Hydrogen and inert gas are introduced into the coating equipment at rates of 90sscm~110sscm and 294sscm~306sscm respectively, and the sputtering power of the silicon target is controlled to be 9 kW~11kW. The fourth interference layer is deposited on the surface of the third interference layer away from the second interference layer, and the time for forming the fourth interference layer is 2000s~3000s. Nitrogen and inert gas are introduced into the coating equipment at rates of 120 sscm~160 sscm and 294 sscm~306 sscm respectively. The sputtering power of the silicon target is controlled at 8 kW~10 kW, and the sputtering power of the chromium target is controlled at 3 kW~5 kW. The fifth interference layer is deposited on the surface of the fourth interference layer away from the third interference layer, and the time for forming the fifth interference layer is 1900 s~2700 s.
10. An electronic device, characterized in that, Includes the metal parts described in any one of claims 1 to 5.