Apparatus and method for manufacturing helium-hydrogen-silicon thin film

Abstract

This invention discloses a manufacturing apparatus for helium-silicon hydride thin films, with helium, hydrogen, or argon gas inlets independently located at both ends of the target mounting base. The manufacturing method is as follows: the target and substrate are respectively mounted onto the target mounting base and the workpiece; a vacuum is drawn; baking is initiated at a temperature ranging from 200℃ to 1000℃; after reaching the baking temperature, the temperature is maintained for half an hour; sputtering gas is activated with a flow rate set between 1 and 1000 sccm; a hydrogen-helium mixed gas is activated with a flow rate set between 1 and 1000 sccm, and the hydrogen-helium molecular ratio is between 10% and 90%; after sputtering, the sputtering gas is turned off, and the hydrogen-helium mixed gas is continuously introduced, maintaining the temperature for half an hour; after cooling, the furnace is opened, the substrate is removed, and the substrate is annealed in the atmosphere at a temperature of 200℃ to 500℃ for half an hour. This method and apparatus can greatly increase process stability and improve the uniformity of film thickness.

Description

Technical Field

[0001] This invention belongs to the field of thin film material preparation technology, specifically relating to a manufacturing apparatus and method for helium-silicon hydride thin films. Background Technology

[0002] Silicon, as a first-generation semiconductor material, has wide applications in industry. Hydrogenated silicon refers to silicon grown by hydrogenating it during its growth process to alter its crystal structure and improve properties such as carrier mobility, optical refractive index, and extinction coefficient. This technology is widely used in microelectronic devices such as solar cells and thin-film transistors, as well as infrared imaging detectors. There are two main methods for growing hydride: chemical deposition and physical vapor deposition. Chemical deposition methods include plasma-enhanced chemical vapor deposition (PECVD) and hot-filament chemical vapor deposition. Chemical deposition generally requires high-purity methane and hydrogen. The doping concentration of hydride prepared by this process is easy to control, and the uniformity is good, but the process conditions are demanding, and the exhaust gas treatment is complex. Physical vapor deposition mainly uses electron guns and magnetron sputtering. Generally, a certain proportion of high-purity hydrogen is introduced during evaporation or sputtering, allowing the silicon film to hydrogenate during deposition. The hydride prepared by this process has lower cost and allows for better control of grain size, but the single-crystal performance is somewhat lower than that of chemical deposition.

[0003] In physical deposition, the reactivity of hydrogen and the instability of the vacuum system's hydrogen pumping speed can easily lead to defects such as uneven formation and high stress in the resulting hydride.

[0004] A method for preparing a silicon-carbon thin film coating by magnetron sputtering, disclosed in CN114807851A, involves pretreating the substrate and placing it in a magnetron sputtering coating apparatus. Planar Si and C targets are used as the source of the corresponding elements, and are positioned opposite each other on the inner wall of the furnace. The sputtering rate of the targets is controlled by adjusting the power of the intermediate frequency pulse power supply. High-purity Ar is used as the ionization gas to ensure an effective glow discharge process. High-purity H2 is used as the reactant gas, ionizing it and combining it with Si and C elements to deposit a silicon-carbon thin film on the substrate surface. By changing the C content, the stoichiometric ratio of Si and C is altered, thereby changing the photoelectric properties of the film. The silicon-carbon thin film prepared by this invention can be widely used in solar cells, thin-film transistors, light-emitting diodes, ultraviolet image sensors, micro-superfluid coatings, and anti-corrosion and anti-oxidation coatings. A device and method for rapidly preparing crystalline epitaxial thin films, disclosed in CN103276443B, includes a vacuum chamber, a vacuum pumping system, a reactive magnetron sputtering epitaxial device, and a rotating thin film growth device. The reactive magnetron sputtering epitaxial device comprises a cathode, an atomic source anode, a gas guiding section, and a power supply. The cathode includes at least one cathode, a metal or semiconductor target located on the cathode, and a magnetron circuit. The advantages of this invention are: it significantly reduces the preparation time of epitaxial wafers, while achieving rapid, high-quality, and low-defect epitaxial thin films and crystalline substrate materials at low cost. It also utilizes lower-priced raw materials and equipment, increases the growth rate, reduces the manufacturing cycle of epitaxial wafers, directly increases the yield of epitaxial wafers, and reduces the cost of epitaxial wafers. The two methods described above produce films with good uniformity, but the structures used are relatively complex and require high precision. Furthermore, the method mainly utilizes a mixed gas entering the vacuum chamber, which results in hydrogen-silicon thin films with poor performance, numerous defects, and unstable processes. Summary of the Invention

[0005] To address the aforementioned problems, the present invention aims to provide an apparatus and method for manufacturing helium-silicon hydride thin films.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a manufacturing apparatus for helium-silicon hydride thin films, comprising a pumping system, a vacuum chamber connected in communication with the pumping system, a workpiece fixed at the top of the vacuum chamber, a target mounting base fixed at the bottom, a magnetic power supply and a magnetic source cooperating mechanism being provided inside the target mounting base, and helium inlet, hydrogen inlet or argon inlet independently provided at both ends of the target mounting base.

[0007] The target mounting base and the workpiece are mounted on the same horizontal line.

[0008] When helium ions are the main sputtering ions, the helium inlet and the hydrogen inlet are distributed on both sides or the same side of the target.

[0009] When argon ions are the main sputtering ions, the argon gas inlet is located on one side of the target, while the hydrogen and helium gas inlets are located on both sides or the same side of the target.

[0010] A method for manufacturing a helium-silicon hydride thin film manufacturing apparatus includes the following steps:

[0011] Step 1: Install the target and the substrate onto the target mounting base and the workpiece respectively, evacuate the vacuum, and start baking. The baking temperature range is 200℃-1000℃. After the baking temperature is reached, keep it at the temperature for half an hour.

[0012] Step 2: Turn on the sputtering gas, with a flow rate set between 1-1000 sccm; turn on the hydrogen-helium mixed gas, with a flow rate set between 1-1000 sccm and a hydrogen-helium molecular ratio between 10% and 90%.

[0013] Step 3: After sputtering is complete, turn off the sputtering gas and continue to introduce the hydrogen-helium mixture, maintaining the temperature for half an hour;

[0014] Step 4: After cooling down, open the furnace, remove the substrate, and anneal the substrate in the atmosphere at a temperature of 200℃-500℃ for half an hour.

[0015] Step 5: Remove the substrate to complete the deposition of the helium-silicon hydride thin film.

[0016] The substrate material includes any one or more of sapphire, glass, silicon, germanium, zinc sulfide, zinc selenide, silicon carbide, and indium phosphide.

[0017] The target material is a silicon target or a silicon target doped with elements, including but not limited to boron. The target material can be circular, square, cylindrical, or other shapes.

[0018] Helium-hydrogen silicon thin films can be alternately stacked with other thin films to form a thin film functional system. The thin films that can participate in the alternating stacking include SiOx, SiNx, SiC, AlN, Al2O3, MgF2, TiOx, Ta2O5, NbOx, HfOx, Ge, GaN, ZnS, ZnSe, Y2O3, ZrOx, Mo, W, Ta, Ti, Ag, Au, Cu, Al, C, DLC, ITO and their mixtures.

[0019] Compared with the prior art, the present invention has the following advantages:

[0020] 1. This invention introduces hydrogen, helium, and argon gases through inlets at different locations within a vacuum chamber, with helium and hydrogen entering the vacuum chamber independently. During the deposition of helium-hydrogen silicon thin films, the ionization of helium accelerates the opening of hydrogen bonds, which is beneficial for the formation of silicon-hydrogen and silicon-hydrogen-helium bonds and promotes crystallization. It also avoids the instability of film formation caused by pure hydrogen in a vacuum, improves the uniformity and optical properties of the film, reduces defects, and lowers film stress by more than 20%.

[0021] 2. This invention can adjust the optical bandgap of helium-hydrogen silicon thin films by adjusting the flow rate, pressure, and relative position of gases such as helium, hydrogen, and argon, thereby optimizing the structure, crystal grain size, surface morphology, and photoelectric properties of the helium-hydrogen silicon thin films.

[0022] 3. This invention, by introducing helium ions and optimizing flow rate, pressure, and inlet position, utilizes helium plasma to significantly reduce stress in reactive magnetron sputtered helium-hydrogen silicon thin films. It also suppresses the generation of excessively high-energy argon particles. Selecting a hydrogen-helium molecular ratio in the range of 10%-90% greatly increases plasma reactivity and Si-H bond formation. Simultaneously, it effectively reduces the stress in the formed helium-hydrogen silicon film by minimizing the shot peening effect, thereby increasing process stability and improving film thickness uniformity. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the specific embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the device in this invention in which the helium inlet and the hydrogen inlet are located on the same side of the target mounting base;

[0025] Figure 2 This is a schematic diagram of the device in this invention in which the helium inlet and the hydrogen inlet are located on both sides of the target mounting base;

[0026] Figure 3 This is a schematic diagram of the device in this invention, in which the helium and hydrogen inlets are distributed on one side of the target mounting base, and the argon inlet is distributed on the other side.

[0027] Figure 4 This is a schematic diagram of the device in this invention, in which the hydrogen and argon inlets are distributed on one side of the target mounting base, and the helium inlet is distributed on the other side of the target.

[0028] Figure 5 This is a schematic diagram of the substrate and the silicon hydride thin film in this invention;

[0029] Figure 6This is a schematic diagram of the substrate and the repeatedly stacked helium-hydrogen silicon thin film, as well as other films that can be alternately stacked, in this invention.

[0030] In the diagram, 101, 201, 301, 401 - vacuum chambers; 102, 202, 302, 402 - pumping systems; 103, 203, 303, 403 - target mounting bases; 104, 204, 304, 404 - magnetron sources; 105, 205, 305, 405 - magnetron power supplies; 110, 210, 310, 410 - helium sources; 111, 211, 3... 11, 411 - Helium inlet; 120, 220, 320, 420 - Hydrogen source; 121, 221, 321, 421 - Hydrogen inlet; 130, 230, 330, 430 - Workpiece; 340, 440 - Argon source; 341, 441 - Argon inlet; 501, 601 - Substrate; 510, 610 - Helium-hydrogenated silicon thin film; 620 - Other films that can be stacked alternately. Detailed Implementation

[0031] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. However, it should not be construed that the scope of the subject matter of the present invention is limited to the following embodiments. All modifications, substitutions and alterations made based on ordinary technical knowledge and conventional means in the art without departing from the above-described technical concept of the present invention are included within the scope of the present invention.

[0032] Example 1: Refer to Figure 1 and Figure 5 A manufacturing apparatus for helium-silicon hydride thin films includes a vacuum system 102 and a vacuum chamber 101 connected in communication with the vacuum system 102. A workpiece 130 is fixed at the top of the vacuum chamber 101, and a target mounting base 103 is fixed at the bottom. A magnetoelectric power supply 105 and a magnetoelectric source 104 are provided inside the target mounting base 103. A helium inlet 111 and a hydrogen inlet 121 are independently provided at both ends of the target mounting base 103. The helium inlet 111 and the hydrogen inlet 121 are located on the same side of the target mounting base 103, and a helium source 110 and a hydrogen source 120 are provided below the helium inlet 111 and the hydrogen inlet 121, respectively.

[0033] Helium ions were used as the primary sputtering ions. A circular silicon target was mounted on the target mounting base 103, and the wafer substrate was mounted on the workpiece 130. A vacuum was drawn, and baking was initiated at 300°C. After reaching the baking temperature, the temperature was maintained for half an hour. Helium inlet 111 and hydrogen inlet 121 were then opened to sputter a hydrogen-helium mixed gas at a flow rate of 200 sccm, with a hydrogen-helium molecular ratio of 30%. The sputtering power supply 105 was turned on, and the power was adjusted to begin sputtering. After sputtering, the sputtering gas was turned off, and the sputtering power supply 105 was shut off. The hydrogen-helium mixed gas was then continuously supplied, and the temperature was maintained for half an hour. After cooling, the furnace was opened, and the wafer substrate was removed. The wafer substrate was annealed in atmosphere at 350°C for half an hour. The wafer substrate was then removed, completing the deposition of the helium-silicon hydride thin film.

[0034] Example 2: Refer to Figure 2 and Figure 4 A manufacturing apparatus for helium-silicon hydride thin films includes a vacuum system 202 and a vacuum chamber 201 connected in communication with the vacuum system 202. A workpiece 230 is fixed at the top of the vacuum chamber 201, and a target mounting base 203 is fixed at the bottom. A magnetron power supply 205 and a magnetron source 204 are provided inside the target mounting base 203. A helium inlet 211 and a hydrogen inlet 221 are independently provided at both ends of the target mounting base 203. The helium inlet 211 and the hydrogen inlet 221 are located on both sides of the target mounting base 203, and a helium source 210 and a hydrogen source 220 are provided below the helium inlet 211 and the hydrogen inlet 221, respectively.

[0035] Helium ions were used as the primary sputtering ions. A squared silicon target was mounted on the target mounting base 203, and a sapphire substrate was mounted on the workpiece 230. A vacuum was drawn, and baking was initiated at a temperature of 500°C. After reaching the baking temperature, the temperature was maintained for half an hour. Helium inlet 211 and hydrogen inlet 221 were then opened to sputter a hydrogen-helium mixed gas at a flow rate of 300 sccm, with a hydrogen-helium molecular ratio of 50%. The sputtering power supply 105 was turned on, the power was adjusted, and sputtering began. After sputtering, the sputtering gas and power supply 105 were turned off, and the hydrogen-helium mixed gas was continued to be supplied, maintaining the temperature for half an hour. After cooling, the furnace was opened, and the substrate was removed. The substrate 501 was annealed in atmosphere at 350°C for half an hour. The substrate 501 was then removed, completing the deposition of the helium-silicon hydride thin film.

[0036] Example 3, referring to Figure 3 and Figure 5A manufacturing apparatus for helium-silicon hydride thin films includes a vacuum system 302 and a vacuum chamber 301 connected in communication with the vacuum system 302. A workpiece 330 is fixed at the top of the vacuum chamber 301, and a target mounting base 303 is fixed at the bottom. A magnetoelectric power supply 305 and a magnetoelectric source 304 are provided inside the target mounting base 303. A helium inlet 311 and a hydrogen inlet 321 are independently provided on one side of the target mounting base 303, and an argon inlet 341 is provided on the other side. A helium source 310, a hydrogen source 320, and an argon source 340 are provided below the helium inlet 311, the hydrogen inlet 321, and the argon inlet 341.

[0037] Argon ions were used as the primary sputtering ions. A cylindrical boron-doped silicon target was mounted on the target mounting base 303. A zinc selenide substrate 501 was mounted on the workpiece 330. A vacuum was drawn, and baking was initiated at a temperature of 700°C. After reaching the baking temperature, the temperature was maintained for half an hour. Argon gas inlet 341 was opened, with a flow rate set to 550 sccm. Then, helium gas inlet 311 and hydrogen gas inlet 321 were opened, with a flow rate set to 500 sccm. The molecular ratio of hydrogen to helium was 60%. The sputtering power supply 105 was turned on, and the power was adjusted to begin sputtering. After sputtering was completed, the sputtering gas was turned off, and the sputtering power supply 305 was turned off. The hydrogen-helium mixed gas was then continued to be charged, and the temperature was maintained for half an hour. After cooling, the furnace was opened, and the substrate was removed. The substrate 501 was annealed in the atmosphere at a temperature of 350°C for half an hour. The substrate 501 was then removed, completing the deposition of the helium-silicon hydride thin film.

[0038] Example 4: Reference Figure 4 and Figure 5 A manufacturing apparatus for helium-silicon hydride thin films includes a vacuum system 402 and a vacuum chamber 401 connected in communication with the vacuum system 402. A workpiece 430 is fixed at the top of the vacuum chamber 401, and a target mounting base 403 is fixed at the bottom. A magnetoelectric power supply 405 and a magnetoelectric source 404 are provided inside the target mounting base 403. An argon inlet 441 and a hydrogen inlet 421 are independently provided on one side of the target mounting base 403, and a helium inlet 411 is provided on the other side. A helium source 410, a hydrogen source 420, and an argon source 440 are provided below the helium inlet 411, the hydrogen inlet 421, and the argon inlet 441.

[0039] Argon ions were used as the primary sputtering ions. A circular boron-doped silicon target was mounted on the target mounting base 403. A silicon carbide substrate 501 was mounted on the workpiece 430. A vacuum was drawn, and baking was initiated at a temperature of 650°C. After reaching the baking temperature, the temperature was maintained for half an hour. Argon gas inlet 441 was opened at a flow rate of 650 sccm. Then, helium gas inlet 311 and hydrogen gas inlet 321 were opened at a flow rate of 550 sccm, with a hydrogen-helium molecular ratio of 70%. Sputtering was initiated by turning on the sputtering power supply 105 and adjusting the power. After sputtering, the sputtering gas was turned off, and the sputtering power supply 305 was turned off. The hydrogen-helium mixture was then continued to be charged and held at the temperature for half an hour. After cooling, the furnace was opened, and the substrate was removed. The substrate 501 was annealed in the atmosphere at a temperature of 300°C for half an hour. The substrate 501 was then removed, completing the deposition of the helium-silicon hydride thin film.

[0040] Reference Figure 6 It includes a 601 substrate, a repeatedly stackable helium-silicon hydride thin film 610, and other repeatedly stackable films 620. The helium-silicon hydride thin film 610 can be stacked alternately with other films 620 to form a thin film functional system. The films that can participate in the alternating stacking include SiOx, SiNx, SiC, AlN, Al2O3, MgF2, TiOx, Ta2O5, NbOx, HfOx, Ge, GaN, ZnS, ZnSe, Y2O3, ZrOx, Mo, W, Ta, Ti, Ag, Au, Cu, Al, C, DLC, ITO, and mixtures thereof.

[0041] With the same process and without the participation of helium, the stress of silicon thin films of the same thickness is 600-1200 MPa; the stress of hydride is 800-1600 MPa; while the stress of helium hydride obtained by this process is 300-900 MPa.

[0042] The purpose of this invention:

[0043] 1) In a vacuum environment, a target material is sputtered onto a substrate material using sputtering gas, while a hydrogen-helium mixture of a certain proportion is introduced to helium-hydrogenate the sputtered silicon thin film. Compared to conventional hydrogenation techniques, this invention introduces hydrogen, helium, and argon gases through inlets at different locations within the vacuum chamber. Using this method, the ionization of helium during the deposition of the helium-hydrogen silicon thin film accelerates the opening of hydrogen bonds, which is beneficial for the formation of silicon-hydrogen bonds and silicon-hydrogen-helium bonds and promotes crystallization. It also avoids the instability of film formation caused by pure hydrogen in a vacuum, improves the uniformity and optical properties of the film, reduces defects, and lowers film stress. Testing has shown that the helium-hydrogenated silicon thin film deposited using this invention meets the requirements of industrial applications.

[0044] 2) This invention employs a structure where helium and hydrogen enter the vacuum chamber independently. This avoids the disadvantages of mixing hydrogen and helium before they enter the vacuum chamber through the same inlet: 1) it cannot optimize the uniformity of the formed film; 2) premature mixing leads to the quenching of He* ions. This invention has the following advantages in preparing high-performance helium-hydrogen silicon thin films: 1) it can adjust and optimize the uniformity of the formed film; 2) it reduces the quenching of He* ions and improves the film performance. The spatial changes (He + e- → He* + e-) and ionization (He + e- → He++e- + e-) of excited helium particles are closely related to power density, electron density, and gas pressure. Power density and electron density are, in turn, related to the relative positions of the gas inlet and the target source.

[0045] As the inlet positions of helium, hydrogen, and argon gases change within the vacuum chamber, the plasma distribution also changes accordingly, leading to variations in the deposition rate distribution. Therefore, optimal film uniformity can be achieved by adjusting the inlet positions of these gases to optimize the deposition rate distribution. With increasing pressure, the He* distribution changes due to the reduction in the electron mean free path and local perturbations in the bipolar electric field. Adding hydrogen alters the He* density distribution on the average discharge plane due to He* quenching. Therefore, premature mixing of helium and hydrogen can cause non-uniform quenching of He*, leading to instability in hydrogen and helium activated particles and thus increasing process instability.

[0046] This invention reveals that the distribution characteristics of hydrogen, helium, and argon plasmas change significantly with variations in pressure and relative position. As pressure increases, the probability of neutral particles being collided increases, the mean free path decreases, and the ion and electron densities increase. Consequently, the charge drift-diffusion loss rate at the electrodes decreases, resulting in a reduction in sheath width. Due to variations in pressure and inlet position, the He* density distribution changes significantly, affecting the spatial variation of plasma parameters throughout the vacuum chamber.

[0047] This invention adjusts the optical bandgap of helium-hydrogen silicon thin films by regulating the flow rate, pressure, and relative position of gases such as helium, hydrogen, and argon, thereby optimizing the film's structure, grain size, surface morphology, and optoelectronic properties. In different Ar / He / H plasma mixtures, three different plasma states exist based on the percentage of He in the gas phase: 1) For low He to total gas ratios (He ≤ 50%), the plasma is argon-dominated, with Ar+ ions being the predominant sputtering ions. Films deposited under this state exhibit a classic dense columnar structure and contain very low amounts of He (below 2%); 2) As He increases, helium ions begin to form, and neutral He ions reach the substrate more quickly, affecting film growth; 3) As the He content in the gas phase increases to 75%, the proportion of He in the film increases to 10 at.%. Bubbles / pores form inside the film, exhibiting a highly porous fibrous nanostructure. The results of this invention confirm that the changes in film properties are related to variations in deposition conditions when Ar is replaced by He, as well as the He injection and release mechanisms during growth. Using the structure of this invention, various nanostructured silicon hydride thin films can be prepared.

[0048] This invention utilizes helium plasma to significantly reduce stress in reactive magnetron sputtered helium-hydrosilicon thin films by introducing helium ions and optimizing flow rate, pressure, and inlet position. Plasma emission spectroscopy reveals that collisional ionization of H atoms by metastable-excited helium atoms generates highly reactive H+ ions and suppresses the generation of excessively high-energy argon particles. Selecting the optimal He / H gas ratio greatly increases plasma reactivity and Si-H bond formation, while effectively reducing the stress in the formed helium-hydrosilicon film by minimizing the shot peening effect.

[0049] The results of this invention show that when the flow rate of helium reaches a certain range, due to the good thermal conductivity and cooling effect of helium, the temperature of the magnetron sputtering target surface becomes uniform and the temperature of the workpiece surface tends to be consistent, which can greatly increase the process stability and improve the uniformity of film thickness.

[0050] The foregoing has provided a detailed description of the apparatus and method for manufacturing a helium-silicon hydride thin film according to the present invention. Specific examples have been used to illustrate the structure and working principle of the invention. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core ideas of the present invention. It should be noted that those skilled in the art can make various improvements and modifications to the present invention without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A method for manufacturing a silicon hydride thin film, characterized in that: A helium-silicon hydride thin film manufacturing apparatus is used. The apparatus includes a gas extraction system and a vacuum chamber that is connected to the gas extraction system. A workpiece is fixed at the top of the vacuum chamber and a target mounting base is fixed at the bottom. A magnetoelectric power supply and a magnetoelectric source are installed inside the target mounting base. Helium, hydrogen and argon gas inlets are independently provided on both sides of the target mounting base. The manufacturing method includes the following steps: Step 1: Install the target and the substrate onto the target mounting base and the workpiece respectively, evacuate the vacuum, and start baking. The baking temperature range is 200℃-1000℃. After the baking temperature is reached, keep it at the temperature for half an hour. Step 2: Turn on the sputtering gas, with a flow rate set between 1-1000 sccm; turn on the hydrogen-helium mixed gas, with a flow rate set between 1-1000 sccm and a hydrogen-helium molecular ratio between 10%-90%; the specific operation of turning on the hydrogen-helium mixed gas is as follows: introduce the hydrogen-helium mixed gas into the vacuum chamber through independently set helium and hydrogen inlets. The helium and hydrogen inlets adopt one of the following distribution methods depending on the main sputtering ions: When helium ions are used as the main sputtering ions, the helium inlet and the hydrogen inlet are distributed on both sides or the same side of the target. When argon ions are used as the main sputtering ions, an argon gas inlet is set on one side of the target, while hydrogen and helium gas inlets are distributed on both sides or the same side of the target. Step 3: After sputtering is complete, turn off the sputtering gas and continue to introduce the hydrogen-helium mixture, maintaining the temperature for half an hour; Step 4: After cooling down, open the furnace, remove the substrate, and anneal the substrate in the atmosphere at a temperature of 200℃-500℃ for half an hour. Step 5: Remove the substrate to complete the deposition of the helium-silicon hydride thin film.

2. The method for manufacturing helium-silicon hydride thin films according to claim 1, characterized in that: The substrate material includes any one of sapphire, glass, silicon, germanium, zinc sulfide, zinc selenide, silicon carbide, and indium phosphide.

3. The method for manufacturing helium-silicon hydride thin films according to claim 1, characterized in that: The target material is a silicon target or a silicon target doped with elements, including boron. The target material can be circular, square, or cylindrical.

4. The method for manufacturing helium-silicon hydride thin films according to claim 1, characterized in that: Silicon hydride thin films can be stacked alternately with other thin films to form a thin film functional system. The thin films involved in the alternating stacking include: SiOx, SiNx, SiC, AlN, Al2O3, MgF2, TiOx, Ta2O5, NbOx, HfOx, Ge, GaN, ZnS, ZnSe, Y2O3, ZrOx, Mo, W, Ta, Ti, Ag, Au, Cu, Al, C, DLC, ITO and their mixtures.

5. The method for manufacturing a silicon hydride thin film according to claim 1, characterized in that: The target mounting base and the workpiece are mounted on the same horizontal line.

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