Composition for removing edge beads from metal-containing resist, metal-containing resist developer composition, and method of forming pattern using the composition

Abstract

Disclosed are a composition for removing edge beads from a metal-containing resist or a metal-containing resist developer composition, and a method of forming or providing a pattern using the composition and / or the developer composition. The composition for removing edge beads from a metal-containing resist or the developer composition for a metal-containing resist may include: a polyphenol-based compound; and an organic solvent, in which the amount of the polyphenol-based compound is from about 10% by weight to about 50% by weight based on 100% by weight of the composition or the developer composition.

Description

[0001] Cross-reference of related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0143301, filed on October 18, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] One or more embodiments of this disclosure relate to a composition for removing edge beads from a metal resist or a developer composition containing a metal resist, and a method of forming or providing a pattern using said composition or said developer composition. Background Technology

[0004] The semiconductor industry has experienced a continuous reduction in critical dimensions, and in order to achieve this reduction, there is a need to develop new types or varieties of high-performance photoresist (PR) materials, as well as a patterning method suitable for processing and patterning increasingly smaller features.

[0005] With the development of the semiconductor industry, there is a need or expectation for semiconductor devices to have fast operating speeds and large storage capacities. To meet this need, process technologies are being developed to improve or enhance the integration, reliability, and response speed of semiconductor devices. For example, accurately controlling / implanting impurities in the working region of a silicon substrate and interconnecting these regions to form or provide devices and ultra-high-density integrated circuits (UHDICs) is important or desirable, and these UHDICs can be realized through a photolithographic process. For example, integrating a photolithographic process that includes operations such as coating a photoresist on a substrate, selectively exposing the photoresist to ultraviolet (UV) light (including extreme ultraviolet (EUV) light), an electron beam (E-Beam), X-rays, and / or the like is important or desirable, and then developing the photoresist.

[0006] For example, in the process of forming or providing a photoresist layer, the resist is applied to the substrate primarily or predominantly while the silicon substrate is rotated. The resist is applied to the edges and back surfaces of the substrate, which can cause particle or pattern defects in subsequent semiconductor processes (such as etching and ion implantation). Therefore, processes are implemented that utilize thinner compositions to strip and remove the photoresist applied to the edges and back surfaces of the silicon substrate, such as edge bead removal (EBR). The EBR process requires a composition that exhibits excellent or suitable solubility for the photoresist and effectively or appropriately removes the beads and photoresist remaining in the substrate without producing resist residues.

[0007] The goal is to develop a photoresist that can improve or enhance sensitivity and critical size (CD) uniformity (e.g., substantial uniformity) while ensuring excellent or suitable etch resistance and resolution in photolithography processes and improving line edge roughness (LER) characteristics, as well as a developer composition that can achieve said characteristics. Summary of the Invention

[0008] One or more aspects of the embodiments of this disclosure relate to a composition for removing edge beads from a metal resist or a developer composition containing a metal resist.

[0009] One or more aspects of the embodiments of this disclosure relate to a composition comprising: a polyphenolic compound; and an organic solvent, wherein the amount of the polyphenolic compound is from 10% to 50% by weight, based on 100% by weight of the composition, wherein the composition is a composition for removing edge beads from a metal resist or a developer composition containing a metal resist.

[0010] One or more aspects of the embodiments of this disclosure relate to a method of forming or providing a pattern using the composition (e.g., a composition for removing edge beads from a metal resist and / or a developer composition containing a metal resist).

[0011] Additional aspects of the embodiments will be set forth in part in the following description, and will become apparent in part from reading the description, or may be learned by practicing the embodiments presented in this disclosure.

[0012] A composition for removing edge beads from a metal resist or a developer composition containing a metal resist according to one or more embodiments comprises: a polyphenolic compound; and an organic solvent, wherein the amount of the polyphenolic compound is from about 10% to about 50% by weight, based on 100% by weight of the composition (e.g., a composition for removing edge beads from a metal resist or a developer composition containing a metal resist).

[0013] A method of forming or providing a pattern according to one or more embodiments includes: coating a metal-containing resist composition on a substrate; coating along the edge of the substrate a composition as described in one or more embodiments for removing edge beads from the metal-containing resist; performing a heat treatment to form or provide a metal-containing photoresist film on the substrate by drying and heating; exposing the metal-containing photoresist film; and developing.

[0014] A method of forming or providing a pattern according to one or more embodiments includes: coating a substrate with a metal-containing photoresist composition; performing a heat treatment to form or provide a metal-containing photoresist film on the substrate by drying and heating; exposing the metal-containing photoresist film; and developing it using a developer composition containing a metal-containing photoresist as described in one or more embodiments.

[0015] A method of forming or providing a pattern according to one or more embodiments includes: coating a metal-containing resist composition on a substrate; coating along the edge of the substrate a composition as described in one or more embodiments for removing edge beads from the metal-containing resist; performing a heat treatment to form or provide a metal-containing photoresist film on the substrate by drying and heating; exposing the metal-containing photoresist film; and developing using a developer composition of the metal-containing resist as described in one or more embodiments.

[0016] The composition according to one or more embodiments for removing edge beads from metal-containing resists can reduce the inherent metallic contamination in metal-containing resists and remove resists coated on the edges and back surfaces of a substrate, thereby meeting the requirements for processing and patterning smaller features.

[0017] The developer composition containing a metal resist according to one or more embodiments enables the achievement of excellent or suitable contrast characteristics, excellent or suitable sensitivity, and reduced line edge roughness (LER) by minimizing (or reducing the degree or incidence of defects) present in the metal-containing photoresist film after the exposure process and promoting development. Attached Figure Description

[0018] The above and other aspects and features of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings.

[0019] Figure 1 This is a schematic diagram of a photoresist coating equipment.

[0020] Figures 2A to 2C It is a cross-sectional view shown according to the process sequence used to describe the method of forming or providing a pattern.

[0021] Explanation of icon numbers

[0022] 1: Substrate support portion

[0023] 2: Nozzle

[0024] 10: Photoresist solution

[0025] 12: Edge beads

[0026] 100: Substrate

[0027] 110: Feature Layer

[0028] 110P: Feature Pattern

[0029] 130P: Photoresist pattern

[0030] OP: Opening

[0031] W: Substrate Detailed Implementation

[0032] The subject matter of this disclosure is described in more detail below with reference to the accompanying drawings. In the following description of this disclosure, functions or structures that are commonly understood by one of ordinary skill in the art will not be repeated for the sake of clarity.

[0033] When describing embodiments of this disclosure (e.g., in describing embodiments of this disclosure), the word "may" refers to "one or more embodiments of this disclosure".

[0034] Unless the context clearly indicates otherwise, the singular forms “a / an” and “the” as used herein are intended to also include the plural forms. Unless the context clearly indicates otherwise, singular expressions also include plural expressions.

[0035] The terms “and / or” or “or” as used in this document include any and all combinations of one or more of the relevant listed items.

[0036] Throughout this disclosure, expressions such as “at least one of…”, “one of…”, and “selected from”, when placed before a list of elements (e.g., when placed before a list of elements), modify the entire list, not individual elements of the list. For example, “at least one of a, b, or c”, “selected from at least one of a, b, and c”, “selected from at least one of a to c”, and / or similar expressions indicate that only a is included, only b is included, only c is included, including (e.g., both a and b are included), including (e.g., both a and c are included), including (e.g., both b and c are included), including all of a, b, and c, or variations thereof.

[0037] In this disclosure, it should be understood that the terms "comprise(s) / comprising," "include(s) / including," or "have / has / having" specify the presence of the stated feature, integer, step, operation, element, and / or component, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms "comprise," "include," "have," or similar terms include or support the terms "consisting of" and "consisting essentially of," thereby indicating the presence of the stated feature, integer, step, operation, element, and / or component, while other features, integers, steps, operations, elements, components, and / or groups thereof are absent or substantially absent.

[0038] In the context of this application, unless otherwise defined, the terms “use,” “using,” and “used” may be considered synonymous with the terms “utilize,” “utilizing,” and “utilized,” respectively.

[0039] The terms “substantially,” “about,” or similar terms used herein are used as approximations rather than as terms of degree, and are intended to take into account the inherent biases of the measured or calculated values ​​that would be recognized by a person skilled in the art. “About” as used herein includes the stated value and refers to a value within an acceptable range of deviation from which a particular value would be determined by a person skilled in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (e.g., limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value. Furthermore, it should be understood that even when the terms “about,” “approximately,” or “substantially” are not explicitly stated in a given element (e.g., a claim element), the scope of such elements is intended to include non-substantialgesic variations or variations within the understanding of a person skilled in the art. For example, the numerical values ​​and ranges provided herein are intended to include tolerances and measurement uncertainties that would be recognized by one of ordinary skill in the art, and the elements (e.g., claim elements) should be interpreted accordingly to cover such equivalent forms.

[0040] Any numerical range described herein is intended to include all subranges of the same numerical precision falling within the stated range. For example, the range “1.0 to 10.0” is intended to include all subranges between the minimum value 1.0 and the maximum value 10.0 (and inclusive), such as having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, for example, 2.4 to 7.6. Any maximum numerical limit described herein is intended to include all lower numerical limits falling within it, and any minimum numerical limit described in this disclosure is intended to include all higher numerical limits falling within it. Therefore, the applicant reserves the right to modify this disclosure (including the claims) to expressly describe any subranges falling within the range expressly described herein.

[0041] For clarity of this disclosure, no descriptions or relationships are provided, and throughout the disclosure, substantially identical or similar configurations or arrangements of elements may be indicated by the same reference numerals. Furthermore, since the size and thickness of each configuration or arrangement shown in the figures may be arbitrarily depicted for better understanding and ease of illustration, embodiments of this disclosure are not necessarily limited thereto.

[0042] In the accompanying drawings, the thickness of each layer, membrane, panel, area, etc., may be exaggerated for clarity. In the accompanying drawings, for better understanding and ease of explanation, the thickness of each layer, area, and / or part of a similar structure may be exaggerated.

[0043] It should be understood that when an element (e.g., a layer, film, region, or substrate) is referred to as being "on" or "above" another element (e.g., when an element (e.g., a layer, film, region, or substrate) is referred to as being "on" or "above" another element), the element may be directly on the other element, or there may be intermediate elements between the elements. In contrast, when an element is referred to as being "directly on" or "directly above" another element (e.g., when an element is referred to as being "directly on" or "directly above" another element), there are no intermediate elements between the elements.

[0044] In this disclosure, "substituted" means that the hydrogen atom is substituted by: deuterium, halogen, hydroxyl, thiol, cyano, carbonyl, carboxyl, amino, amide, ester, substituted or unsubstituted C1 to C30 amino, nitro, substituted or unsubstituted C1 to C40 silyl, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C1 to C10 haloalkyl, substituted or unsubstituted C1 to C10 alkylsilyl, substituted or unsubstituted C3 to C30 cycloalkyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C1 to C20 alkoxy, or substituted or unsubstituted C1 to C20 thioether. "Unsubstituted" means that the hydrogen atom remains hydrogen and is not substituted by another substituent.

[0045] In this disclosure, unless otherwise defined, "alkyl" means a straight-chain or branched aliphatic hydrocarbon group. Alkyl groups may be "saturated alkyl groups" that do not contain any double bonds (e.g., carbon-carbon double bonds) or triple bonds (carbon-carbon triple bonds).

[0046] The alkyl group can be C1 to C20 alkyl. For example, the alkyl group can be C1 to C10 alkyl or C1 to C6 alkyl. For example, C1 to C5 alkyl means that the alkyl chain contains 1 to 5 carbon atoms and can be selected from methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl and tert-butyl.

[0047] Examples of alkyl groups may include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, pentyl, hexyl and / or similar groups.

[0048] In the chemical formula described in this article, t-Bu refers to tert-butyl.

[0049] In this disclosure, "aryl" refers to a substituent in which all elements of the cyclic substituent have p-orbitals, and these p-orbitals are conjugated and may contain monocyclic or polycyclic (e.g., rings sharing adjacent carbon atom pairs) functional groups.

[0050] Examples of aryl groups may include substituted or unsubstituted C6 to C30 aryl groups, such as substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraquinone, substituted or unsubstituted phenanthyl, substituted or unsubstituted tetraphenyl, substituted or unsubstituted pyrene, substituted or unsubstituted biphenyl, substituted or unsubstituted p-terphenyl, substituted or unsubstituted meta-terphenyl, substituted or unsubstituted o-terphenyl, substituted or unsubstituted trefyl, substituted or unsubstituted benzo[a]phenanthyl, substituted or unsubstituted triphenylene, substituted or unsubstituted peryl, substituted or unsubstituted fluorenyl, substituted or unsubstituted indene, or combinations thereof, but the embodiments disclosed herein are not limited thereto.

[0051] Figure 1 This is a schematic diagram showing a photoresist coating device.

[0052] Reference Figure 1 The photoresist coating equipment may be equipped with a substrate support portion 1, on which a substrate W is placed, and the substrate support portion 1 may include a rotary chuck and / or a rotary coater.

[0053] The substrate support portion 1 can rotate at a set or predetermined rotational speed in a first direction to provide centrifugal force to the substrate W. A nozzle 2 can be disposed or provided on the substrate support portion 1, and the nozzle 2 can be disposed or provided in an air region away from the upper portion of the substrate W, and can move to the upper portion of the substrate during the solution supply phase to spray the photoresist solution 10. Therefore, the photoresist solution 10 can be coated onto the surface of the substrate W by centrifugal force. In this document, the photoresist solution 10 supplied to the center of the substrate W can be coated while simultaneously diffusing to the edges of the substrate W by centrifugal force, wherein a portion of the photoresist solution 10 moves to the side surfaces of the substrate W and the lower surfaces of the substrate edges.

[0054] For example, in the coating process, the photoresist solution 10 can be applied mainly or predominantly by spin coating, wherein a set amount or a predetermined amount of the viscous photoresist solution 10 is supplied to the central portion of the substrate W and gradually diffuses toward the edge of the substrate W by centrifugal force.

[0055] Therefore, photoresist can be formed or provided uniformly (e.g., substantially uniformly) by means of the rotational speed of the substrate support portion.

[0056] In one or more embodiments, this rotation can evaporate the solvent from the solution and thus gradually increase the viscosity, causing a relatively large amount of photoresist to accumulate on the edge of the substrate under the action of surface tension and to accumulate significantly or substantially uniformly on the lower surface of the edge of the substrate, which is referred to as edge beads 12.

[0057] In the following, compositions for removing edge beads from a metal resist or developing compositions containing a metal resist according to one or more embodiments are described in more detail.

[0058] A composition for removing edge beads from a metal resist according to one or more embodiments, or a developer composition for removing edge beads from a metal resist according to one or more embodiments, may comprise: a polyphenolic compound; and an organic solvent, wherein the amount of the polyphenolic compound is from about 10% to about 50% by weight, based on 100% by weight of the composition (e.g., the composition for removing edge beads from a metal resist or the developer composition for removing edge beads from a metal resist).

[0059] By including polyphenolic compounds, there is a simultaneous (e.g., concurrent) provision of acceptors and donors to readily form direct hydrogen bonds with ligands of metal compounds in metal resists, and thus, polyphenolic compounds can bind to metals and effectively or appropriately remove metal resists (e.g., metal residues, such as tin-based metal residues), thereby improving or enhancing patterning ability.

[0060] For example, polyphenolic compounds may have a structure in which the acceptor and donor are conjugated, and thus electrons are delocalized and can move freely, making hydrogen bond formation more favorable or beneficial.

[0061] For example, the amount of polyphenolic compounds may be from about 10% to about 40% by weight, based on 100% by weight of the composition (e.g., a composition for removing edge beads from a metal resist or a developer composition containing a metal resist).

[0062] For example, the amount of polyphenolic compounds may be from about 10% to about 30% by weight in 100% by weight of the composition (e.g., a composition for removing edge beads from a metal resist or a developer composition containing a metal resist).

[0063] For example, polyphenolic compounds may include at least one carbonyl group.

[0064] In one or more embodiments, the polyphenolic compound may be at least one selected from tannic acid, ellagic acid, chrysophanol, usnic acid, quercetin, and resveratrol.

[0065] Examples of organic solvents in compositions or developer compositions for removing edge beads from metal resists according to one or more embodiments may include: propylene glycol methyl ether (PGME), propylene glycol methyl ether acetate (PGMEA), and propylene glycol butyl ether. Ethylene glycol methyl ether (PGBE), diethyl glycol ethyl methyl ether, dipropyl glycol dimethyl ether, ethanol, 2-butoxyethanol, n-propanol, isopropanol, n-butanol, isobutanol, hexanol, ethylene glycol, propylene glycol, heptanone, propylene carbonate, butyl carbonate, diethyl ether, dibutyl ether, ethyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, diisopentyl ether, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, tetrahydrofuran, dimethyl sulfoxide, dimethylformamide, acetonitrile, diacetone alcohol, 3,3-dimethyl-2-butanone, N-methyl-2-pyrrolidone, dimethylacetamide, cyclohexanone methyl-2-hydroxy-2-methylpropionate (HBM) Gamma butyrolactone (GBL), 1-butanol (n-butanol), ethyl lactate (EL), diene butyl ether (DBE), diisopropyl ether (DIAE), acetylacetone, butyl acetate (n-butyl acetate), 4-methyl-2-pentanol (also known as methyl isobutyl methanol) Carbinol (MIBC), 1-methoxy-2-propanol, 1-ethoxy-2-propanol, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, 2-hydroxyethyl propionate, 2-hydroxy-2-methylethyl propionate, ethyl ethoxylate, ethyl hydroxyacetate, methyl 2-hydroxy-3-methylbutyrate, 3-methoxymethyl propionate, 3-methoxyethyl propionate, 3-ethoxyethyl propionate, 3-ethoxymethyl propionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, methyl 2-hydroxyisobutyrate, methoxybenzene, n-butyl acetate, 1-methoxy-2-propyl acetate, methyl methoxypropionate, ethyl ethoxypropionate, or mixtures thereof, but the embodiments disclosed herein are not limited thereto.

[0066] The composition for removing edge beads from metal-containing resists according to one or more embodiments is effective or suitable for removing metal-containing resists, such as undesirable metal residues, such as tin-based metal residues.

[0067] In one or more embodiments, the metal resist-containing developer composition according to this disclosure can minimize (or reduce the degree or incidence of defects) in the metal-containing photoresist film after the exposure process, and can make development easy, thereby achieving excellent or suitable patterning characteristics.

[0068] In one or more embodiments, excellent or suitable sensitivity and reduced line edge roughness (LER) can be achieved.

[0069] In cases where other additives, which will be described in more detail herein, are included, the amount of organic solvent may be the remainder other than the included components.

[0070] The composition may also contain at least one other additive selected from surfactants, dispersants, hygroscopic agents and coupling agents.

[0071] The metal compound in the metal resist may be an organotin compound selected from at least one of organic oxygen and organic carbonyl oxygen.

[0072] For example, the metal compound in a metal resist can be represented by chemical formula 1.

[0073] Chemical Formula 1

[0074]

[0075] In chemical formula 1,

[0076] R 1 It can be selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, and substituted or unsubstituted C6 to C30 arylalkyl.

[0077] R 2 To R 4 Each of these can be independently a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, a substituted or unsubstituted C6 to C30 arylalkyl, an alkoxy, or an aryloxy (-OR) a , where R a It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof), or a carboxyl group (-O(CO)R).b , where R b It can be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof), alkylamide or dialkylamide (-NR). c R d , where R c and R d Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), or an amide group (-NR). e (COR f ), where R e and R f Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof), and an amidine (-NR) group. g C(NR h )R i , where R g R h and R i Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof), an alkylthio or arylthio (-SR) j , where R j It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof) or a thiocarboxyl (-S(CO)R) k , where R k It is hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof), and

[0078] Selected from R2 To R 4 At least one of them is selected from alkoxy or aryloxy (-OR) a , where R a It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof), or a carboxyl group (-O(CO)R). b , where R b It can be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof), alkylamide or dialkylamide (-NR). c R d , where R c and R d Each of these groups is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof), an amidato group (-NR). e (COR f ), where R e and R f Each of these groups is independently hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or combinations thereof), and amidinato group (-NR). g C(NR h )R i , where R g R h and R i Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof), an alkylthio or arylthio (-SR) j , where R jis a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof) or a thiocarboxyl group (-S(CO)R k , where R k is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof).

[0079] As another example, the metal compound in the metal-containing resist can be represented by Chemical Formula 2 or Chemical Formula 3.

[0080] Chemical Formula 2

[0081] R 5 z SnO (2-(z / 2)-(x / 2)) (OH) x

[0082] In Chemical Formula 2,

[0083] R 5 can be a C1 to C31 hydrocarbon group, 0 < z ≤ 2, and 0 < (z + x) ≤ 4;

[0084] Chemical Formula 3

[0085] R 6 n Sn m X l Y k ,

[0086] where in Chemical Formula 3,

[0087] R 6 can be a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including one or more double bonds (e.g., carbon-carbon double bonds) or triple bonds (e.g., carbon-carbon triple bonds), a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C4 to C30 heteroaryl group, a carbonyl group, an epoxyethyl group, an epoxypropyl group, or a combination thereof,

[0088] X can be sulfur (S), selenium (Se), or tellurium (Te),

[0089] Y can be -OR m or -OC(=O)R n ,

[0090] Where R m It may be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and

[0091] R n It may be hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and

[0092] n, m, l, and k can each be an integer from 1 to 20 independently.

[0093] According to one or more embodiments, a method of forming or providing a pattern may include removing edge beads using a composition as described in one or more embodiments. For example, the pattern produced may be a photoresist pattern. For example, the pattern may be a negative or negative-type photoresist pattern.

[0094] A method of forming or providing a pattern according to one or more embodiments may include: coating a metal-containing photoresist composition on a substrate, coating along the edge of the substrate a composition as described in one or more embodiments for removing edge beads from the metal-containing photoresist, performing heat treatment to form or provide a metal-containing photoresist film on the substrate by drying and heating, exposing the metal-containing photoresist film, and developing.

[0095] For example, forming or providing a pattern using a metal-containing resist composition may include: coating a metal-containing resist composition onto a substrate on which a thin film is formed or disposed by spin coating, slot coating, inkjet printing, and / or similar processes, and drying the coated metal-containing resist composition to form or provide a photoresist film. The metal-containing resist composition may contain a tin-based compound, and for example, the tin-based compound may include at least one selected from tin compounds containing an organooxy group and tin compounds containing an organocarbonyl group.

[0096] For example, edge beads containing metal resist can be removed by applying an appropriate amount of a composition for removing edge beads containing metal resist along the edge of the substrate while rotating the substrate at an appropriate or suitable speed (e.g., 500 rpm or greater).

[0097] Subsequently, a first heat treatment process can be performed on the substrate on which the photoresist film is formed or disposed. The first heat treatment process can be performed at a temperature of about 80°C to about 120°C, and in this process, the solvent can be evaporated and the photoresist film can be more firmly or properly adhered to the substrate.

[0098] Then, the photoresist film can be selectively exposed.

[0099] Examples of light that can be used in exposure processes include not only light with relatively low energy wavelengths (e.g., i-line (wavelength 365 nm), KrF excited molecular laser (wavelength 248 nm), ArF excited molecular laser (wavelength 193 nm) and / or similar light), but also light with relatively high energy wavelengths (e.g., extreme ultraviolet (EUV; wavelength 13.5 nm) and / or similar light), and also other sources such as electron beams (e-beam) and / or the like.

[0100] For example, the light used for exposure according to one or more embodiments may be light with a wavelength range of about 5 nm to about 150 nm and light with relatively high energy wavelengths (e.g., extreme ultraviolet (EUV; wavelength of 13.5 nm)) and other sources (e.g., electron beams (e-beams) and / or the like).

[0101] When forming or providing photoresist patterns, negative or negative-type patterns can be formed or provided.

[0102] Because polymers are formed or provided through cross-linking reactions (e.g., condensation between organometallic compounds), the exposed areas of a photoresist film can have a different solubility than the non-exposed areas of the photoresist film.

[0103] Then, a second heat treatment process can be performed on the substrate. This second heat treatment process can be performed at a temperature of approximately 90°C to approximately 200°C. By performing the second heat treatment process, the exposed areas of the resist film become less soluble in the developer.

[0104] For example, a photoresist pattern corresponding to a negative image can be completed by using an organic solvent (e.g., 2-heptanone) to dissolve and remove the photoresist film corresponding to the non-exposed area.

[0105] Examples of organic solvents in the developer composition used in a method of forming or providing a pattern according to one or more embodiments may include: ketones, such as methyl ethyl ketone, acetone, cyclohexanone and / or 2-heptanone; alcohols, such as 4-methyl-2-propanol, 1-butanol, isopropanol, 1-propanol and / or methanol; esters, such as propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate, n-butyl acetate and / or butyrolactone; aromatic compounds, such as benzene, xylene and / or toluene; or combinations thereof.

[0106] As described in one or more embodiments, photoresist patterns formed or provided by exposure not only to light with relatively low energy wavelengths (e.g., i-line (wavelength 365 nm), KrF excited molecular laser (wavelength 248 nm), ArF excited molecular laser (wavelength 193 nm) and / or similar light) but also to light with relatively high energy wavelengths (e.g., extreme ultraviolet (EUV; wavelength 13.5 nm) and / or similar light) and other sources (e.g., electron beams and / or the like) can have a thickness of about 5 nm to about 100 nm. For example, photoresist patterns can be formed or configured to have a thickness of about 5 nm to about 90 nm, about 5 nm to about 80 nm, about 5 nm to about 70 nm, about 5 nm to about 60 nm, about 5 nm to about 50 nm, about 5 nm to about 40 nm, about 5 nm to about 30 nm, or about 5 nm to about 20 nm.

[0107] In one or more embodiments, the photoresist pattern may have a half-pitch of less than or equal to about 50 nm, for example less than or equal to 40 nm, for example less than or equal to 30 nm, for example less than or equal to 20 nm, for example less than or equal to 15 nm, and the photoresist pattern may have a line width roughness of less than or equal to about 10 nm, less than or equal to about 5 nm, less than or equal to about 3 nm, or less than or equal to about 2 nm.

[0108] A method of forming or providing a pattern according to one or more embodiments may include: coating a substrate with a metal-containing photoresist composition, performing a heat treatment to form or provide a metal-containing photoresist film on the substrate by drying and heating, exposing the metal-containing photoresist film, and developing it using the composition as described in one or more embodiments.

[0109] The coating of a metal-containing resist composition on a substrate may be substantially the same as that described in one or more embodiments.

[0110] The thermal treatment of drying and heating to form or provide a metal-containing photoresist film on a substrate may be substantially the same as that described in one or more embodiments.

[0111] The exposure of the metal-containing photoresist film may be substantially the same as that described in one or more embodiments.

[0112] A photoresist pattern corresponding to a negative image can be completed by using a developer composition containing a metal resist, as described in one or more embodiments, to dissolve the photoresist film corresponding to the non-exposed area and then remove the photoresist film.

[0113] Examples of metal compounds in metal-containing resist compositions may be substantially the same as those described in one or more embodiments.

[0114] In the following, a method for forming or providing a pattern by development is described in more detail with reference to the accompanying drawings.

[0115] Figures 2A to 2C It is a cross-sectional view showing the process sequence in order to describe the method of forming or providing a pattern.

[0116] Reference Figure 2A It can develop the exposed photoresist film to form a photoresist pattern 130P.

[0117] In one or more embodiments, the exposed photoresist film may be developed to remove unexposed areas of the photoresist film, and a photoresist pattern 130P including exposed areas of the photoresist film may be formed or provided. The photoresist pattern 130P may include a plurality of openings OP.

[0118] In one or more embodiments, the development of the photoresist film can be performed using a negative-tone development (NTD) process. In this document, the metal-containing photoresist developer composition according to one or more embodiments can be used as a developer composition.

[0119] Reference Figure 2B 130P photoresist patterns can be used to... Figure 2A The feature layer 110 in the results shown is processed.

[0120] For example, the feature layer 110 may be processed by one or more of the following suitable processes: etching the feature layer 110 exposed by the opening OP of the photoresist pattern 130P, implanting impurity ions into the feature layer 110, forming or providing an additional film on the feature layer 110 via the opening OP, deforming a portion of the feature layer 110 via the opening OP, and / or performing similar processes. Figure 2B The process of processing feature pattern 110P by etching feature layer 110 exposed via opening OP is shown.

[0121] Reference Figure 2C , can Figure 2BThe results shown remove the photoresist pattern 130P retained on the feature pattern 110P. To remove the photoresist pattern 130P, an ashing and stripping process can be used. The feature pattern 110P is located on the substrate 100.

[0122] A method of forming or providing a pattern according to one or more embodiments may include: coating a metal-containing photoresist composition on a substrate, coating along the edge of the substrate a composition as described in one or more embodiments for removing edge beads from the metal-containing photoresist, performing heat treatment to form or provide a metal-containing photoresist film on the substrate by drying and heating, exposing the metal-containing photoresist film, and developing using a developer composition of the metal-containing photoresist as described in one or more embodiments.

[0123] Each method may be substantially the same as that described in one or more embodiments, but in the methods for removing edge beads and developing methods, the composition for removing edge beads from a metal resist or the developer composition for removing metal resist according to this disclosure may be used simultaneously (e.g., concurrently) to effectively or appropriately improve or enhance the effect of removing edge beads and the solubility of the unexposed area, and thus meet the need for processing and patterning smaller features, thereby achieving excellent or appropriate contrast characteristics, excellent or appropriate sensitivity and reduced line edge roughness (LER).

[0124] In the following, the subject matter of this disclosure will be described in more detail by examples of the preparation of compositions for removing edge beads from metal resist-containing photoresist as described in one or more embodiments and of developer compositions containing metal resist as described in one or more embodiments. However, the embodiments of this disclosure are not limited to the following examples.

[0125] Example

[0126] Preparation of compositions for removing edge beads from metal resist-containing materials

[0127] Example 1

[0128] The polyphenolic compounds were mixed with solvents according to the composition in Table 1, and then stirred at room temperature (25°C) until completely (e.g., substantially completely) dissolved. The final composition was then obtained by passing the result through a polytetrafluoroethylene (PTFE) filter with a pore size of 1 μm.

[0129] Examples 2 to 7 and Comparative Examples 1 to 3

[0130] Each composition was obtained in substantially the same manner as in Example 1, except that the composition was changed to each of the compositions shown in Table 1.

[0131] Table 1

[0132]

[0133] The solvent mixing ratios in the table are by weight.

[0134] A1: Tannic acid

[0135] A2: Ellagic acid

[0136] A3: Rhein

[0137] A4: Usnea acid

[0138] A5: Formic acid

[0139] A6: Acetic acid

[0140] A7: 4-Methylcatechol

[0141] A8: Quercetin

[0142] A9: Resveratrol

[0143] PGMEA: Propylene Glycol Methyl Ether Acetate

[0144] PGME: Propylene Glycol Methyl Ether

[0145] Preparation of developer compositions containing metal resist

[0146] Example 7

[0147] The polyphenolic compounds were mixed with solvents according to the composition in Table 2, and then stirred at room temperature (25°C) until completely (e.g., substantially completely) dissolved. The final composition was then obtained by passing the result through a PTFE material filter with a pore size of 1 μm.

[0148] Examples 8 to 10 and Comparative Examples 4 to 6

[0149] Each composition was obtained in substantially the same manner as in Example 7, except that the composition was changed to each of the compositions shown in Table 2.

[0150] Table 2

[0151]

[0152] The solvent mixing ratios in the table are by weight.

[0153] Preparation of photoresist compositions containing organometals

[0154] Preparation Example

[0155] An organometallic compound with the structural unit of chemical formula C (weight average molecular weight: 1,500 g / mol) was dissolved in 4-methyl-2-pentanol at a concentration of 1% by weight, and then filtered through a 0.1 μm PTFE syringe filter to prepare a photoresist composition.

[0156] Chemical formula C

[0157]

[0158] Assessment 1: Assessment of residual film thickness (peel test) and assessment of Sn residue before development

[0159] 1.0 mL of the photoresist composition containing an organometallic compound, prepared according to the example, was poured onto a 6-inch silicon wafer, allowed to stand for 20 seconds, and then spin-coated at 800 rpm for 30 seconds. The thickness of the coating film obtained by heat treatment at 180°C for 60 seconds was then measured using ellipsometry. On wafers with coating films formed or disposed thereon, 10 mL of each composition obtained from Examples 1 to 7 and Comparative Examples 1 to 3 for removing edge beads was injected along the edge, spin-coated for 5 seconds, and then dried while rotating at 1,500 rpm. The thickness of the film obtained by heat treatment at 150°C for 60 seconds was then remeasured using ellipsometry to confirm the thickness change before and after the edge bead removal process, and evaluated based on the following criteria. In addition, vapor phase decomposition-inductively coupled plasma mass spectrometry (VPD ICP-MS) was performed to confirm the Sn residue, and the results are shown in Table 3.

[0160] If the residual thickness is less than 2 Å, then it is: ○; and if the residual thickness is greater than 2 Å, then it is: X.

[0161] Table 3

[0162]

[0163] Referring to Table 3, compared with the composition for removing edge beads from metal-containing resist according to the comparative example, the composition for removing edge beads from metal-containing resist according to the example has a better metal removal effect, thereby further promoting the reduction of residual metal.

[0164] Assessment 2: Defect Assessment

[0165] The prepared organometallic photoresist (PR) composition was spin-coated onto an 8-inch wafer at 1,500 rpm for 30 seconds and then heat-treated at 160°C for 60 seconds to produce the coated wafer.

[0166] The coated wafers were developed for 30 seconds using each of the developer compositions of Examples 7 to 10 and Comparative Examples 7 to 14 at a rotation speed of 1,500 rpm and then cured at 240°C for 60 seconds.

[0167] After the curing process was completed, wafer defects were measured using a surface inspection device (e.g., a SurfScan SP2 manufactured by KLA Tencor Corp.).

[0168] Based on the number of defects smaller than or equal to 0.3 μm, "Good" is given if there are fewer than 150 defects, and "Poor" is given if there are more than or equal to 150 defects.

[0169] Assessment 3: ArF Pattern Assessment

[0170] The prepared organometallic photoresist (PR) composition was spin-coated onto an 8-inch wafer at 1,500 rpm for 30 seconds and then heat-treated at 110°C for 60 seconds to produce the coated wafer.

[0171] Using an ArF immersion exposure apparatus (Nikon Precision Inc.; NSR-S610C, NA=1.30, σ 0.98 / 0.65, 35° dipole s-polarized illumination, 6% halftone phase-shift mask), coated wafers were exposed to 20 mJ to 35 mJ in a line and space (L / S) pattern, baked at 100°C (PEB) for 60 seconds, developed using each of the developer compositions according to Examples 7 to 10 and Comparative Examples 7 to 14 at a rotational speed of 1500 rpm for 30 seconds, and cured at 240°C for 60 seconds to obtain a 1:1 line and space (L / S) pattern with a width of 40 nm. The cross-sectional shape of this pattern was examined using an electron microscope. The pattern collapse rate of the pattern was calculated according to Equation 1 to evaluate the ArF pattern performance. The results are shown in Table 4.

[0172] Equation 1

[0173] Pattern collapse occurrence rate = {(number of collapsed patterns) / (total number of patterns)} 100 (%)

[0174] Evaluation criteria

[0175] ○: Pattern collapse rate <60%

[0176] X: Pattern collapse rate ≥ 60%

[0177] Table 4

[0178]

[0179] Referring to Table 4, compared with the application of the metal-containing photoresist developer composition according to the comparative example, the resolution is excellent or suitable when the metal-containing photoresist developer composition according to the example is applied, and pattern collapse is minimized or reduced.

[0180] In the foregoing, certain embodiments of this disclosure have been described and illustrated. However, it will be apparent to those skilled in the art that this disclosure is not limited to the embodiments described herein, but can be appropriately modified and varied without departing from the spirit and scope of this disclosure. Therefore, such modified or varied embodiments should not be understood separately from the technical concept and aspects of the embodiments of this disclosure, and the modified embodiments are within the scope of the appended claims and their equivalents.

Claims

1. A composition for removing edge beads from a metal resist-containing photoresist or a developer composition containing a metal resist, comprising: Polyphenolic compounds; and organic solvents, The amount of the polyphenolic compound is from 10% to 50% by weight, based on 100% by weight of the composition.

2. The composition according to claim 1, wherein: The amount of the polyphenolic compound is from 10% to 30% by weight, based on 100% by weight of the composition.

3. The composition according to claim 1, wherein: The polyphenolic compound contains at least one carbonyl group.

4. The composition according to claim 1, wherein: The polyphenolic compound is selected from at least one of tannic acid, ellagic acid, rhein, usnic acid, quercetin, and resveratrol.

5. The composition according to claim 1, wherein: The metal compound in the metal-containing resist is an organotin compound containing at least one of an organooxy group and an organocarbonyl group.

6. The composition according to claim 5, wherein: The metal compound in the metal-containing corrosion resist is represented by chemical formula 1: Chemical Formula 1 ， In chemical formula 1, R 1 Selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, and substituted or unsubstituted C6 to C30 arylalkyl. R 2 To R 4 Each of the following is independently a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, a substituted or unsubstituted C6 to C30 arylalkyl, or -OR a -O(CO)R b -NR c R d -NR e (COR f -NR g C(NR h )R i -SR j or -S(CO)R k , Where R a It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R b It is hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R c and R d Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R e and R f Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R g R h and R i Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R j It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R k It is hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and Selected from R 2 To R 4 At least one of them is selected from -OR a -O(CO)R b -NR c R d -NR e (COR f -NR g C(NR h )R i -SR j or -S(CO)R k , Where R a It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R b It is hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R c and R d Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R e and R f Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R g R h and R i Each of the following is independently hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R j It can be a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof. Where R k It is hydrogen, substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C3 to C20 cycloalkyl, substituted or unsubstituted C2 to C20 alkenyl, substituted or unsubstituted C2 to C20 alkynyl, substituted or unsubstituted C6 to C30 aryl, or a combination thereof.

7. The composition according to claim 1, wherein: The metal compound in the metal-containing corrosion inhibitor is represented by chemical formula 2 or chemical formula 3: Chemical formula 2 R 5 z SnO (2-(z / 2)-(x / 2)) (OH) x , In chemical formula 2, R 5 is a C1 to C31 hydrocarbyl group, 0 < z ≤ 2, and 0 < (z + x) ≤ 4; Chemical formula 3 R 6 n Sn m X l Y k , In chemical formula 3, R 6 The substituted or unsubstituted C1 to C20 alkyl groups, substituted or unsubstituted C3 to C20 cycloalkyl groups, substituted or unsubstituted C2 to C20 aliphatic unsaturated organic groups including one or more double or triple bonds, substituted or unsubstituted C6 to C30 aryl groups, substituted or unsubstituted C4 to C30 heteroaryl groups, carbonyl groups, ethylene oxide groups, propylene oxide groups, or combinations thereof. X represents sulfur, selenium, or tellurium. Y is -OR m or -OC(=O)R n , Where R m It is a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and R n It is hydrogen, a substituted or unsubstituted C1 to C20 alkyl, a substituted or unsubstituted C3 to C20 cycloalkyl, a substituted or unsubstituted C2 to C20 alkenyl, a substituted or unsubstituted C2 to C20 alkynyl, a substituted or unsubstituted C6 to C30 aryl, or a combination thereof, and n, m, l, and k are each an independent integer from 1 to 20.

8. A method for forming a pattern, comprising: A metal resist composition is coated onto a substrate; The composition as described in any one of claims 1 to 7 for removing edge beads from the metal resist is applied along the edge of the substrate; A heat treatment is performed to form a metal-containing photoresist film on the substrate by drying and heating; Expose the metal-containing photoresist film; and Develop the product.

9. A method for forming a pattern, comprising: A metal resist composition is coated onto a substrate; A heat treatment is performed to form a metal-containing photoresist film on the substrate by drying and heating; The metal-containing photoresist film is exposed; as well as Development is performed using the developer composition containing a metal resist as described in any one of claims 1 to 7.

10. A method for forming a pattern, comprising: A metal resist composition is coated onto a substrate; The composition as described in any one of claims 1 to 7 for removing edge beads from the metal resist is applied along the edge of the substrate; A heat treatment is performed to form a metal-containing photoresist film on the substrate by drying and heating; The metal-containing photoresist film is exposed; as well as Development is performed using the developer composition containing a metal resist as described in any one of claims 1 to 7.

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