Method for regulating and controlling plasma dissociation mode and plasma processing device
By adjusting the ratio of process gas to regulating gas in an inductively coupled plasma etching apparatus, the plasma impedance distribution can be changed, enabling the switching between inductive and capacitive coupling modes. This solves the problem of plasma density inhomogeneity, reduces equipment complexity, and increases etching rate, making it suitable for semiconductor manufacturing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING INTEGRATED CIRCUIT EQUIPMENT INNOVATION CENTER CO LTD
- Filing Date
- 2025-12-26
- Publication Date
- 2026-04-21
AI Technical Summary
In existing inductively coupled plasma etching devices, the plasma density is unevenly distributed radially, resulting in high equipment complexity, high cost, and difficulty in adapting to high-frequency operating conditions. Furthermore, the device is not effective in adjusting plasma inhomogeneities that are non-centrosymmetric or drift over time.
By introducing process gas and regulating gas into the process chamber and adjusting their ratio, the impedance distribution of the plasma is changed, thereby enabling the inductively coupled plasma source to switch between capacitively coupled mode and inductively coupled mode. The plasma dissociation mode is adjusted using inert gases such as argon, helium, and nitrogen.
It reduces equipment complexity and cost, improves process control capabilities, and is particularly suitable for the manufacturing of semiconductor devices with processes below 90nm. It solves the problem of non-centrosymmetric plasma distribution and improves etching rate.
Smart Images
Figure CN121908449A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor processing technology, and more specifically, to a method for controlling plasma dissociation modes and a plasma processing apparatus. Background Technology
[0002] Introducing inductively coupled plasma (ICP) etching equipment into semiconductor etching processes can alleviate problems such as low ionization rates associated with capacitively coupled plasma (CCP) etching. ICP etching can generate plasma densities more than 10 times higher than CCP, and also achieve higher densities of ions and neutral radicals. Furthermore, the lower process pressure results in a larger mean free path of ions within the plasma, facilitating the formation of vertical etching cross-sections. Due to these advantages, it is considered an essential technology in etching processes used to form patterns several nanometers in size.
[0003] Inductively coupled plasma (ICP) typically involves plasma excitation via coils under low voltage. The ICP device supplies high-frequency power to the coils, generating an alternating electromagnetic field. This field, coupled through a quartz dielectric window, transfers energy to the gas within the cavity, thus exciting the plasma. A negative bias voltage is generated on the substrate via a radio frequency power source. Positive ions in the plasma move towards the substrate under this negative bias, bombarding the wafer on the substrate to induce etching, deposition, and other microelectronic processes.
[0004] Traditional ICP equipment typically employs helical or planar coil structures. Due to the asymmetry of electromagnetic field distribution (such as edge effects and standing wave interference) between the power feed-in and ground terminals (feed-in / feed-out), the plasma density exhibits a radial gradient distribution, with the density in the central region being ≥30% higher than that at the edges. Although some improvements have been proposed in related technologies, such as using segmented coils and impedance distributors to mitigate this problem, these existing methods increase equipment complexity and are difficult to adapt to high-frequency (e.g., above 100MHz) operating conditions. Summary of the Invention
[0005] The purpose of this invention is to provide a method and a plasma processing device for controlling plasma dissociation modes, which can at least alleviate the problems of complex equipment and limited application scenarios in improving the non-centrosymmetric distribution of plasma, reduce equipment complexity, and improve process control capabilities.
[0006] In a first aspect, the present invention provides a method for controlling plasma dissociation modes, the method comprising: Process gas is introduced into the process chamber, and plasma is generated using an inductively coupled plasma source. A regulating gas is introduced into the process chamber. By adjusting the ratio of the regulating gas to the process gas, the impedance distribution of the plasma is changed, thereby enabling the inductively coupled plasma source to switch between capacitively coupled mode and inductively coupled mode discharge.
[0007] In some alternative embodiments, the conditioning gas includes at least one of argon, helium, nitrogen, or neon.
[0008] In some alternative embodiments, the conditioning gas is selected from argon.
[0009] In some optional embodiments, the volume ratio of the conditioning gas to the process gas is (5-95):(95-5).
[0010] In some optional embodiments, the volume ratio of the conditioning gas to the process gas is (5-90):(95-10).
[0011] In some optional embodiments, adjusting the ratio of the conditioning gas to the process gas includes: Increasing the proportion of the regulating gas, making its content greater than that of the process gas, reduces plasma impedance and converts the plasma dissociation mode from capacitive coupling mode to inductive coupling mode.
[0012] In some alternative embodiments, the inductively coupled plasma source includes a radio frequency (RF) power source for generating RF power in the range of 50W to 2500W.
[0013] In some optional embodiments, when the radio frequency power is in the range of 700W to 1500W, the plasma impedance decreases by an amount of A as the proportion of the regulating gas increases; When the radio frequency power is in the range of 50W to 500W, the plasma impedance decreases by a factor of B as the proportion of the regulating gas increases. When the radio frequency power is in the range of 1550W to 2500W, the plasma impedance decreases by a factor of C as the proportion of the regulating gas increases. A, B, and C satisfy the following conditions: A > B, and A > C.
[0014] In some alternative implementations, B and C satisfy: C > B.
[0015] In some alternative embodiments, the inductively coupled plasma source further includes an inductive coil and a matching device, wherein the radio frequency power supply is electrically connected to the inductive coil through the matching device to excite the process gas to generate plasma.
[0016] In some alternative embodiments, the process gas includes at least one of fluorine-based gas, chlorine-based gas, bromine-based gas, hydrogen, or oxygen.
[0017] In a second aspect, the present invention provides a plasma processing apparatus for the aforementioned method of regulating plasma dissociation modes, comprising a process chamber and an inductively coupled plasma source. By introducing process gas and regulating gas into the process chamber and adjusting the ratio of the regulating gas to the process chamber, the inductively coupled plasma source can switch between capacitively coupled mode discharge and inductively coupled mode discharge.
[0018] In some alternative embodiments, the plasma processing apparatus further includes a controller comprising at least one processor and at least one memory storing a computer program that, when executed by the processor, implements the method for regulating plasma dissociation modes as described above.
[0019] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects: In this application, by introducing process gas into the process chamber and injecting conditioning gas into the process gas, the inductively coupled plasma source can switch between capacitively coupled mode discharge and inductively coupled mode discharge by adjusting the ratio of conditioning gas to process chamber. That is, the dissociation mode of inductively coupled plasma (ICP) is adjusted by introducing conditioning gas. This can be used to replace the traditional coil arrangement method with low-cost gas ratio adjustment, thereby solving the problem of non-centrosymmetric plasma distribution. It can improve process control capability while reducing equipment complexity, and is particularly suitable for the manufacturing of semiconductor devices with processes below 90nm.
[0020] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0022] Figure 1 This is a schematic diagram of the structure of a plasma processing device provided in an embodiment of the present invention; Figure 2A table showing the relationship between plasma impedance and the proportion and power of a regulating gas (such as Ar) provided for embodiments of the present invention; Figure 3 This is a schematic diagram of the etching rate distribution provided in an embodiment of the present invention.
[0023] Figure label: 100 - Process Chamber; 200-Inductively Coupled Plasma Source; 300-Base. Detailed Implementation
[0024] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0025] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings.
[0026] In related technologies, in inductively coupled plasma (ICP) devices employ adjustable local coupling strength ICP coils to alleviate the problem of uneven plasma density distribution. This is achieved by connecting several helical coils (planar helices or solenoids) in series on the coil substrate. By changing the helical direction of these additional coils (same as or opposite to the substrate), the coupling strength is locally enhanced or weakened, thereby compensating for the uneven distribution of plasma—excessively strong at the center and too weak at the edges—and improving wafer etching uniformity. However, this approach has drawbacks: it is essentially a mechanical compensation in terms of hardware structure; the complex coil structure increases design and manufacturing costs; furthermore, once the coil is fabricated, its compensation characteristics are fixed, making dynamic and real-time adjustments during the process difficult; and it has limited controllability for non-centrosymmetric or time-drifting plasma inhomogeneities.
[0027] In addition, related technologies have proposed schemes to optimize ICP dissociation and uniformity by applying external magnetic field confinement. For example, a compensation and adjustment device is set up outside or inside the inductive coupling generator. This device generates a magnetic field through magnets, and by adjusting the strength and direction of these magnets, it compensates for external magnetic field interference and actively controls the plasma density distribution. However, the drawback of this scheme is that it requires additional magnetic control components (i.e., the magnets in the compensation and adjustment device). This not only significantly increases the complexity and size of the system, but may also introduce additional energy consumption and maintenance costs. At the same time, the strong magnetic field may interfere with the expected chemical reaction path of the process gas.
[0028] In view of this, the present invention provides a method and apparatus for regulating plasma dissociation modes. It primarily adjusts the dissociation modes of inductively coupled plasma by introducing a regulating gas. This method is applicable to semiconductor manufacturing, material surface treatment, and thin film deposition processes. It alleviates problems associated with modifying hardware structures, such as complex equipment, high costs, and poor adjustment effects for non-centrosymmetric or time-drifting plasma inhomogeneities. The invention simplifies the process, reduces costs, increases etching rates, and meets practical needs. Specific technical solutions are described below.
[0029] refer to Figure 1 As shown in the embodiment of this application, a method for controlling plasma dissociation mode is provided, the method comprising: Process gas is introduced into the process chamber 100, and plasma is generated using the inductively coupled plasma source 200. A regulating gas is introduced into the process chamber 100. By adjusting the ratio of the regulating gas to the process gas, the impedance distribution of the plasma is changed, thereby enabling the inductively coupled plasma source 200 to switch between capacitively coupled mode and inductively coupled mode for discharge.
[0030] In the embodiments of this application, the provided method is a plasma dissociation mode control method based on the injection of a regulating gas, such as an inert gas, to compensate for ICP coil feeding defects. This method is applicable to inductively coupled plasma processing devices and can be used to perform process treatments on workpieces, such as etching and deposition.
[0031] The inductively coupled plasma source 200 can generate a high-frequency electromagnetic field by passing radio frequency current through an induction coil to excite process gas to produce plasma.
[0032] In this embodiment, the plasma source used is an inductively coupled plasma source 200, also known as an inductively coupled plasma source. It mainly adjusts the dissociation mode of inductively coupled plasma (ICP) by introducing a regulating gas (such as an inert gas). It is suitable for semiconductor manufacturing, material surface treatment and thin film deposition processes.
[0033] Specifically, during the process, process gas is introduced into the process chamber 100, and conditioning gas is injected into the process gas. Plasma is generated using an inductively coupled plasma source 200. By adjusting the ratio of conditioning gas to process gas, the plasma impedance distribution is changed, thereby enabling the switching of different discharge modes of the inductively coupled plasma source 200, that is, the switching of the ICP etching machine discharge mode (ICP E / H mode discharge).
[0034] The aforementioned "switching between E / H mode discharges" mainly refers to the transition between two drastically different discharge states of an inductively coupled plasma source. E mode refers to capacitive coupling mode, which is generated by the fact that, at lower RF power, the coupling between the coil and the plasma acts primarily like a capacitor. The RF voltage generates a strong alternating electric field between the coil and the grounded cavity, mainly concentrated in the sheath near the dielectric window (such as a quartz window). Electrons gain energy through oscillations in this sheath electric field (called ohmic heating) and collide with gas molecules to generate plasma. The main characteristics of E mode are lower plasma density and higher electron temperature.
[0035] H-mode refers to inductively coupled plasma (ICP) mode. Its generation mechanism involves a sudden surge in plasma density when the RF power exceeds a critical value (ignition threshold), transforming the plasma into a good conductor. At this point, the alternating current in the coil generates an alternating magnetic field that penetrates the dielectric window, inducing a surrounding vortex electric field. Electrons are efficiently accelerated in this induced electric field (a process known as induction heating), thus generating and maintaining extremely high-density plasma. The main characteristics of H-mode are very high plasma density and relatively low electron temperature. E / H mode switching is the essential physical characteristic of ICP discharge.
[0036] Plasma impedance primarily refers to the impediment exhibited by plasma to alternating current (usually radio frequency). Plasma impedance mainly represents the dynamic and complex impediment characteristics of plasma to radio frequency current, typically determined by both sheath capacitance and bulk resistance. Plasma impedance determines whether radio frequency power can be efficiently and stably coupled into the plasma, and is crucial for process repeatability and stability.
[0037] It should be understood that adjusting the dissociation mode of ICP mainly involves controlling the relative concentration and energy of active groups (free radicals) and ions in the plasma to adapt to different process requirements (such as high etching rate, high selectivity, low damage, anisotropy, etc.). Adjusting the gas ratio, such as precisely adjusting the ratio of process gas and control gas in the mixed gas, can be used as a means to fine-tune the chemical / physical balance, selectivity, and etching morphology.
[0038] Therefore, the method provided in this application embodiment, by introducing process gas into the process chamber 100 and injecting conditioning gas into the process gas, and by adjusting the ratio of conditioning gas to process chamber, allows the inductively coupled plasma source 200 to switch between capacitively coupled mode discharge and inductively coupled mode discharge; that is, by introducing conditioning gas (such as inert gas) to adjust the dissociation mode of inductively coupled plasma (ICP), it can be used to replace the traditional coil arrangement method with low-cost gas ratio adjustment, thereby solving the problem of non-centrosymmetric plasma distribution, improving process control capability while reducing equipment complexity, and is particularly suitable for semiconductor device manufacturing with processes below 90nm.
[0039] Compared to existing solutions that involve modifying the hardware structure, which suffer from problems such as complex equipment, high cost, and poor performance in addressing non-centrosymmetric or time-drifting plasma inhomogeneities, the method of this invention does not require hardware structure modification, thus reducing equipment modification and maintenance costs. It can also effectively solve the problem of non-centrosymmetric plasma distribution, improve process control capabilities, increase etching rates, and meet practical needs.
[0040] In some embodiments, the conditioning gas may be an inert gas, such as at least one of argon, helium, nitrogen, or neon. As an example, the conditioning gas may be nitrogen or an inert gas such as helium, argon, or neon.
[0041] In the method for controlling the plasma dissociation mode in this embodiment, a regulating gas, such as an inert gas, is injected into the process chamber 100. By adjusting the volume ratio of the inert gas to the process gas, the plasma impedance distribution is changed, thereby achieving the switching of the ICP etching machine discharge mode, that is, the switching of the ICP E / H mode discharge.
[0042] In one specific embodiment, the regulating gas can be argon (Ar). Argon is preferably used as the regulating gas in this embodiment because it has the characteristics of low molecular weight and easy ionization.
[0043] In another specific embodiment, the regulating gas can be helium (He).
[0044] In other embodiments, the regulating gas may also be nitrogen (N2) or neon (Ne).
[0045] In some embodiments, the volume ratio of conditioning gas to process gas is (5-95):(95-5). In other words, in the mixed gas containing conditioning gas and process gas, the volume percentage of conditioning gas is 5%-95%, for example, the volume percentage of conditioning gas can be 5%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, etc.
[0046] Optionally, the plasma processing apparatus for controlling plasma dissociation modes includes a process chamber 100 that can be evacuated, and plasma for processing a substrate (or wafer) is formed inside the process chamber 100. Optionally, a base 300 for supporting the substrate (or wafer) to be processed is provided below the interior of the process chamber 100. The base 300 includes a chuck (which can be an electrostatic chuck or a mechanical chuck) for supporting or fixing the substrate (or wafer) during the process; the substrate (or wafer) to be processed can be placed on the chuck.
[0047] In some embodiments, the inductively coupled plasma source 200 includes a radio frequency power supply for generating radio frequency power.
[0048] In some embodiments, the inductively coupled plasma source 200 further includes an inductive coil and a matching device. That is, the inductively coupled plasma source includes a radio frequency power supply, an inductive coil, and a matching device, which are electrically connected to the inductive coil through the matching device to excite the process gas to generate plasma.
[0049] Optionally, in this plasma processing apparatus, the top of the process chamber 100 is provided with an air inlet device, which can be connected to a process gas source to achieve multiple air intakes. In addition, the air inlet device can also be connected to a regulating gas source to deliver the regulating gas provided by the regulating gas source into the process chamber through the air inlet device.
[0050] In this embodiment, the RF power supply is electrically connected to the induction coil via a matching converter. An intake device is used to deliver process gas into the process chamber. During the process, the intake device is activated to deliver process gas into the process chamber, and then the RF power supply is activated to load RF power onto the induction coil via the matching converter. The RF energy generated by the induction coil is fed into its defined space and excites the process gas to form plasma. Furthermore, during this process, a regulating gas, such as an inert gas, is injected into the process chamber. By adjusting the volume ratio of the inert gas to the process gas, the plasma impedance distribution is changed, thereby achieving the switching of the ICP etching machine's discharge mode.
[0051] Optionally, in this embodiment, a bias power generator may also be provided. The bias power generator is connected to a base located below the process chamber through a matching network. The main function of the bias power generator is to control the incident angle and direction of the plasma in the process chamber.
[0052] Optionally, an exhaust zone is provided at a suitable location in the plasma processing apparatus. This exhaust zone is connected to an external exhaust device (e.g., a vacuum pump) to extract used reaction gases and byproduct gases from the processing zone during the process, establishing appropriate pressure within the processing zone through gas flow. For example, an exhaust device is connected to the perimeter of the base to remove newly generated gases and some reaction gases that did not have time to participate in the reaction, thereby controlling the gas pressure within the process chamber.
[0053] In some embodiments, adjusting the ratio of regulating gas to process gas includes: Increasing the proportion of regulating gas, making its content greater than that of process gas, reduces plasma impedance and converts the plasma dissociation mode from capacitive coupling mode to inductive coupling mode.
[0054] In this embodiment, by increasing the volume ratio of the conditioning gas in the mixed gas containing process gas and conditioning gas, that is, by making the volume ratio of the conditioning gas greater than that of the process gas, the plasma impedance can be reduced, thereby changing the plasma dissociation mode from capacitive coupling mode to inductive coupling mode and improving the etching rate.
[0055] In some embodiments, the process gas includes, but is not limited to, at least one of fluorine-based gas, chlorine-based gas, bromine-based gas, hydrogen, or oxygen. The fluorine-based gas may be, for example, a fluorocarbon gas, a fluorocarbon-hydrocarbon gas, a nitrogen-fluorine gas, or a sulfur-fluorine gas; the chlorine-based gas may be, for example, chlorine; and the bromine-based gas may be, for example, hydrogen bromide.
[0056] It should be noted that this embodiment does not limit the type of process gas, and it can be selected and set according to specific process requirements, without any special restrictions.
[0057] In some embodiments, the radio frequency power ranges from 50W to 2500W; as examples, the radio frequency power can be 50W, 100W, 150W, 200W, 250W, 300W, 400W, 500W, 700W, 1000W, 1200W, 1500W, 1750W, 2000W, 2500W, etc.
[0058] Figure 2 A table showing the relationship between plasma impedance and conditioning gas (such as inert gas Ar) and power is provided. Figure 2 As shown, within different power ranges, the decrease in plasma impedance varies with increasing volume percentage of the regulating gas. It should be noted that... Figure 2 In the diagram, different colors represent different discharge modes. Red represents capacitive coupling, green represents inductive coupling, and yellow represents the switching region, which is the interval where the two modes will switch.
[0059] As an example, refer to Figure 2 In some embodiments, when the radio frequency power ranges from 700W to 1500W, the plasma impedance decreases by an amount A as the proportion of the regulating gas increases; when the radio frequency power ranges from 50W to 500W, the plasma impedance decreases by an amount B as the proportion of the regulating gas increases; when the radio frequency power ranges from 1550W to 2500W, the plasma impedance decreases by an amount C as the proportion of the regulating gas increases; A, B, and C satisfy the following conditions: A > B, and A > C.
[0060] Alternatively, C > B, that is, in some cases, A > C > B. Or, in some cases, B can be slightly smaller than C.
[0061] Therefore, compared to other power ranges, within the 700W–1500W RF power range, and preferably within the 700W–1200W RF power range, the decrease in plasma impedance A is greatest as the proportion of the conditioning gas increases, for example, from 5% to 90%. For instance, at a power of 1000W, with a conditioning gas volume percentage of 5%, the plasma impedance is 9.6Ω, while increasing the volume percentage to 90% results in a plasma impedance of 3.3Ω. Alternatively, at a power of 1200W, with a conditioning gas volume percentage of 5%, the plasma impedance is 9.9Ω, while increasing the volume percentage to 90% results in a plasma impedance of 3.3Ω.
[0062] Typically, but not limitingly, in one specific embodiment, the method for controlling the plasma dissociation mode of this embodiment can employ argon (Ar) to control the ICP dissociation mode; for example, in a polysilicon etching process, a process gas comprising nitrogen trifluoride (NF3) and hydrogen (H2) is introduced into the process chamber, and argon (Ar) is injected into the process gas NF3 and hydrogen (H2), wherein the process parameters include: Ar:NF3 (volume ratio) = 5:1 / 10:1, that is, the volume ratio of Ar:NF3 can vary between 5:1 and 10:1; the operating pressure is 1 Torr and the RF power is 1200W.
[0063] from Figure 3 As can be seen, in this embodiment, Ar gas was injected into the process chamber, and with the increase in the Ar proportion, the plasma impedance decreased by 40%, the dissociation mode switched from capacitive to inductive mode, and the etching rate increased by 78%. range % optimized from 22% to 8%; of which U range % refers to the uniformity of etching.
[0064] Accordingly, in some embodiments, this application also provides a plasma processing apparatus for the aforementioned method of controlling plasma dissociation modes, the plasma processing apparatus comprising a process chamber and an inductively coupled plasma source.
[0065] In this embodiment, by introducing process gas and regulating gas into the process chamber and adjusting the ratio of regulating gas to process chamber, the inductively coupled plasma source can switch between capacitively coupled mode discharge and inductively coupled mode discharge.
[0066] The plasma processing device described in this embodiment can be used in the method for controlling the plasma dissociation mode described in the foregoing embodiments, or other methods can be employed. For a detailed description of the plasma processing device described in this embodiment, please refer to the corresponding descriptions in the foregoing embodiments, or refer to relevant prior art for the remaining structural parts of the plasma processing device; these will not be repeated here.
[0067] In some embodiments, the plasma processing apparatus further includes a controller, which includes at least one processor and at least one memory storing a computer program that, when executed by the processor, implements the aforementioned method for regulating plasma dissociation modes.
[0068] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A method for controlling plasma dissociation modes, characterized in that, The method includes: Process gas is introduced into the process chamber, and plasma is generated using an inductively coupled plasma source. A regulating gas is introduced into the process chamber. By adjusting the ratio of the regulating gas to the process gas, the impedance distribution of the plasma is changed, thereby enabling the inductively coupled plasma source to switch between capacitively coupled mode and inductively coupled mode discharge.
2. The method for controlling plasma dissociation modes according to claim 1, characterized in that, The regulating gas includes at least one of argon, helium, nitrogen, or neon.
3. The method for controlling plasma dissociation modes according to claim 1, characterized in that, The volume ratio of the conditioning gas to the process gas is (5-95):(95-5).
4. The method for controlling plasma dissociation modes according to claim 1, characterized in that, The step of adjusting the ratio of the regulating gas to the process gas includes: Increasing the proportion of the regulating gas, making its content greater than that of the process gas, reduces plasma impedance and converts the plasma dissociation mode from capacitive coupling mode to inductive coupling mode.
5. The method for controlling plasma dissociation modes according to claim 1, characterized in that, The inductively coupled plasma source includes a radio frequency power supply for generating radio frequency power, the radio frequency power being in the range of 50W to 2500W.
6. The method for controlling plasma dissociation modes according to claim 5, characterized in that, When the radio frequency power is in the range of 700W to 1500W, the plasma impedance decreases by an amount of A as the proportion of the regulating gas increases. When the radio frequency power is in the range of 50W to 500W, the plasma impedance decreases by a factor of B as the proportion of the regulating gas increases. When the radio frequency power is in the range of 1550W to 2500W, the plasma impedance decreases by a factor of C as the proportion of the regulating gas increases. A, B, and C satisfy the following conditions: A > B, and A > C.
7. The method for controlling plasma dissociation modes according to claim 5, characterized in that, The inductively coupled plasma source also includes an inductive coil and a matching device. The radio frequency power supply is electrically connected to the inductive coil through the matching device to excite the process gas to generate plasma.
8. The method for controlling plasma dissociation modes according to any one of claims 1 to 7, characterized in that, The process gas includes at least one of fluorine-based gas, chlorine-based gas, bromine-based gas, hydrogen, or oxygen.
9. A plasma processing apparatus for the method of controlling plasma dissociation mode as described in any one of claims 1 to 8, characterized in that, This includes process chambers and inductively coupled plasma sources; By introducing process gas and regulating gas into the process chamber and adjusting the ratio of the regulating gas to the process chamber, the inductively coupled plasma source can switch between capacitively coupled mode discharge and inductively coupled mode discharge.
10. The plasma processing apparatus according to claim 9, characterized in that, It also includes a controller, which includes at least one processor and at least one memory, the memory storing a computer program that, when executed by the processor, implements the method for regulating plasma dissociation modes as described in any one of claims 1 to 8.