Display panel, preparation method and display device

Abstract

The invention provides a display panel. The display panel comprises a substrate; the driving device layer is located on one side of the substrate, the driving device layer comprises a first metal layer, and the first metal layer is a first layer of metal of the driving device layer in the direction pointing to the substrate; the first electrode layer is located on the side, away from the substrate, of the driving device layer and comprises a plurality of first electrodes arranged at intervals; the auxiliary electrode layer is located on the side, away from the substrate, of the first electrode layer and comprises a plurality of auxiliary electrodes arranged at intervals, and the first electrode and the auxiliary electrodes are correspondingly arranged; the microcavity adjusting layer is arranged between the first electrode layer and the auxiliary electrode layer along the thickness direction of the substrate and comprises a plurality of microcavity adjusting units which are arranged at intervals; the first electrode layer is electrically connected with the first metal layer through the auxiliary electrode layer; the thicknesses of the microcavity adjusting units corresponding to the light-emitting devices emitting the same color light are the same, and the thicknesses of the microcavity adjusting units corresponding to the light-emitting devices emitting the different color light are different.

Description

Technical Field

[0001] This invention relates to the field of display technology, and more particularly to a display panel, its manufacturing method, and a display device. Background Technology

[0002] With the development of display technology, people have increasingly higher requirements for the lifespan and display quality of display panels. However, in the preparation of inorganic conditioning layers in related display panels, the etching process can damage the anode surface, leading to a decrease in the efficiency of light-emitting devices and affecting the lifespan of the display panel. Furthermore, in the manufacturing process of high PPI display panels, the development of mask technology is difficult and costly. To achieve a high PPI pixel layout, ITO layers are usually used for lead wire design to improve space utilization. However, this usually increases the number of masks, resulting in a significant increase in cost. Summary of the Invention

[0003] This invention provides a display panel and its manufacturing method, which can solve the problems of reduced light-emitting device efficiency and reduced lifespan of the display panel caused by damage to the anode surface due to etching process, as well as increased cost due to increased mask quantity.

[0004] In a first aspect, to solve the above-mentioned technical problems, the present invention provides a display panel, the display panel comprising: substrate; A driving device layer is located on one side of the substrate, the driving device layer including a first metal layer, the first metal layer being disposed on the side of the driving device layer away from the substrate; The first electrode layer, located on the side of the driving device layer away from the substrate, includes a plurality of first electrodes spaced apart. An auxiliary electrode layer is located on the side of the first electrode layer away from the substrate, and includes a plurality of auxiliary electrodes spaced apart, with the first electrode and the auxiliary electrodes being disposed correspondingly to each other; A microcavity adjustment layer, disposed along the thickness direction of the substrate between the first electrode layer and the auxiliary electrode layer, includes a plurality of spaced-apart microcavity adjustment units; wherein The first electrode layer is electrically connected to the first metal layer through the auxiliary electrode layer; the microcavity adjustment unit corresponding to the light-emitting device that emits the same color light has the same thickness, and the microcavity adjustment unit corresponding to the light-emitting device that emits different colors of light has different thicknesses; In some embodiments, the light-emitting device includes a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein the first light-emitting device, the second light-emitting device, and the third light-emitting device are light-emitting devices that emit light of different colors; Preferably, the first light-emitting device is a red light-emitting device, the second light-emitting device is a green light-emitting device, and the third light-emitting device is a blue light-emitting device; In some embodiments, the microcavity adjustment unit includes a first microcavity adjustment unit, a second microcavity adjustment unit, and a third microcavity adjustment unit, which are respectively used to adjust the cavity length of the first light-emitting device, the second light-emitting device, and the third light-emitting device; Preferably, the thickness H1 of the first microcavity adjustment unit is less than the thickness H2 of the second microcavity adjustment unit, and the thickness H2 of the second microcavity adjustment unit is less than the thickness H3 of the third microcavity adjustment unit. Preferably, 0Å≤H1<400Å, 200Å≤H2<800Å, 400Å≤H1≤1200Å; more preferably, H1=0Å, 300Å≤H2≤500Å, 700Å≤H3≤900Å; In some embodiments, the microcavity conditioning layer comprises SiOx or SiNx; In some embodiments, the display panel further includes, A light-emitting device layer is located on the side of the driving device layer away from the substrate, and the light-emitting device is located in the light-emitting device layer; The driving device layer includes an array of driving devices, which are used to drive the light-emitting device to emit light. The first metal layer is connected to the auxiliary electrode layer through a via. Preferably, the auxiliary electrode layer comprises ITO or IGZO; In some embodiments, the light-emitting device includes a first electrode, a light-emitting functional layer, and a second electrode. The light-emitting functional layer is located on the side of the auxiliary electrode away from the substrate, and the second electrode is located on the side of the light-emitting functional layer away from the substrate. The first electrode is the anode of the light-emitting device, and the second electrode is the cathode of the light-emitting device.

[0005] On the other hand, the present invention provides a method for manufacturing a display panel according to the first aspect of the invention, the method comprising: A substrate for fabricating the display panel is provided; A driving device layer is formed above the substrate; A planarization layer is formed above the driving device layer, and the planarization layer is patterned and etched to form vias that connect to the first metal layer; A first electrode layer is deposited on top of the planarization layer. After patterning etching and photoresist stripping, a high-temperature annealing process is performed to crystallize the surface of the first electrode layer to form multiple first electrodes. A hard mask layer is formed over the plurality of first electrodes, and the microcavity conditioning layer is patterned and etched to form a buffer layer at the position corresponding to the light-emitting device. A microcavity adjustment layer is formed above the plurality of first electrodes, and the microcavity adjustment layer is patterned and etched to form a microcavity adjustment unit at the corresponding position of the light-emitting device; An auxiliary electrode layer is formed on the microcavity adjustment layer, and the auxiliary electrode layer is patterned and etched to form auxiliary electrodes corresponding to the plurality of first electrodes. The auxiliary electrodes are electrically connected to the first metal layer through the corresponding vias. In some embodiments, the first hard mask layer includes at least one of IZO, IGZO, ITO, or Cu; The microcavity conditioning layer includes at least one of SiOx or SiNx; The thickness of the hard mask layer is 300 Å - 1000 Å; The temperature for the high-temperature annealing process is set to 160℃-270℃; In some embodiments, the light-emitting device includes a first light-emitting device, a second light-emitting device, and a third light-emitting device that emit different colors of light. Before forming a microcavity adjustment unit on the corresponding light-emitting device, the buffer layer is formed on the other light-emitting devices. In another aspect, the present invention provides a display device, the display device comprising the display panel described in the first aspect above or comprising a display panel manufactured by the preparation method described in the other aspect above; In the display panel and display panel fabrication method provided by this invention, a microcavity adjustment layer is set between the first electrode and the auxiliary electrode. By adjusting the thickness of the microcavity, the cavity length of the light-emitting device can be adjusted, so that the wavelength of the light emitted by different light-emitting devices matches the cavity length of the light-emitting device, thereby improving the display effect. During the fabrication process, a hard mask layer is set to protect the electrode during the etching process, reducing the damage to the electrode surface caused by the etching process during the fabrication process. Furthermore, the first electrode is electrically connected to the driving device layer through the auxiliary electrode layer, which can reduce the number of masks and thus reduce costs, especially in the fabrication of high PPI display panels, where its cost advantage is even more obvious.

[0006] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0007] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0008] Figure 1 This is a partial structural diagram of a display panel provided by related technologies; Figure 2 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 3 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 4 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 5 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 6 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 7 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 8 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 9 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 10 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 11 This is a partial structural diagram of a display panel provided in an embodiment of the present invention; Figure 12 This is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention; Figure 13 This is a schematic diagram of a display device structure provided in an embodiment of the present invention.

[0009] Explanation of reference numerals: 10-Substrate; 20-Actuating device layer; 30-First metal layer; 40-Planarization layer; 50-Auxiliary electrode layer; 51-Auxiliary electrode; 600-First electrode layer; 60-First electrode; 700-Microcavity adjustment layer; 70-Microcavity adjustment unit; 80-Photoresist; 90-Buffer layer Detailed Implementation To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0010] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0011] As described in the background section, during the fabrication of related display panels, the etching process can damage the anode surface, leading to a decrease in the efficiency of the light-emitting devices and affecting the lifespan of the display panel. At the same time, in the fabrication of high PPI display panels, the development of fine metal mask (FMM) technology is difficult and costly. To achieve a high PPI pixel layout, ITO layers are usually used for lead wire design to improve space utilization. However, this usually increases the number of masks, which in turn leads to a significant increase in cost.

[0012] like Figure 1 As shown, the diagram is a partial structural schematic of a display panel of the related technology. The structure shown is fabricated using conventional processes. The display panel includes a substrate 10, a driving device layer 20, a planarization layer 40, and a light-emitting device layer (not shown in the figure) above the planarization layer 40. The figure only shows a simplified structure such as the anode 60 located in the light-emitting device layer and the auxiliary electrode layer 50 electrically connected to the first metal layer 30 of the driving device layer 20. In the related display panel, based on the requirement of adjusting the thickness of different light-emitting pixels at different positions using the inorganic microcavity adjustment layer, the inorganic microcavity adjustment layer needs to use a dry etching process to stack the film thickness in order to ensure effective control of the stacked thickness on the surface of the anode 60. In the conventional process of fabricating this structure, there are at least two inorganic etching stacking processes, which can easily cause anode damage risk.

[0013] In view of this, embodiments of the present invention provide a display panel and a method for manufacturing the same. Before the etching process, a hard mask layer capable of blocking etching is formed on the surface of the first electrode 60 to protect the first electrode 60. This hard mask layer can be an oxide layer or metal Cu. To reduce the number of masks, the present invention adjusts the electrode structure by forming an auxiliary electrode layer 50 above the first electrode 60. The auxiliary electrode layer 50 is electrically connected to the driving device layer, enabling the simultaneous fabrication of signal leads required for high PPI pixel layout and the first electrode light-emitting signal layer. It should be noted that in the present invention, the first electrode 60 can be an anode, the first electrode light-emitting signal layer can be the upper surface of the anode, and the signal leads required for high PPI pixel layout are the overlapping leads that connect the anode and the top metal layer of the driving device layer, i.e., the first metal layer 3030. It should also be noted that in the accompanying drawings of this application, solid lines only represent interlayer boundaries and have no other practical meaning.

[0014] Specifically, refer to Figure 11 As shown, in a first aspect, embodiments of the present invention provide a display panel, the display panel comprising: a substrate 10; a driving device layer; a first electrode layer 600; an auxiliary electrode layer 50; and a microcavity adjustment layer 700; wherein, the driving device layer is located on one side of the substrate and includes a first metal layer 30 disposed on the side of the driving device layer away from the substrate, the first metal layer 30 being the first metal layer of the driving device layer in the direction pointing towards the substrate, that is, the top metal layer of the driving device layer; the first electrode layer 600, located on the side of the driving device layer away from the substrate, includes a plurality of spaced-apart first electrodes 60; the auxiliary electrode layer 50, located on the side of the first electrode layer 600 away from the substrate, includes a plurality of spaced-apart auxiliary electrodes 51, the first electrodes and the auxiliary electrodes 51 being disposed in a one-to-one correspondence; The microcavity adjustment layer 700 is disposed between the first electrode layer 600 and the auxiliary electrode layer 50 along the thickness direction of the substrate, and includes a plurality of spaced microcavity adjustment units 70.

[0015] In this embodiment of the invention, the first electrode layer 600 is electrically connected to the first metal layer 30 through the auxiliary electrode layer 50. During the fabrication process, the microcavity adjustment unit 70 corresponding to the light-emitting devices emitting the same color light is completed simultaneously in the same process and fabrication technology. Therefore, the thickness of the microcavity adjustment unit 70 corresponding to the light-emitting devices emitting the same color light is the same. In order to enhance the display effect, different colors of light are emitted, that is, different wavelengths of light are emitted. There is a matching requirement for the cavity length of the optical cavity of the light-emitting device. This matching relationship can make the light resonate in the optical cavity of the light-emitting device and then be emitted, thereby enhancing the display effect. In this embodiment of the invention, the thickness of the microcavity adjustment unit 70 corresponding to the light-emitting devices emitting different colors of light is different. This setting meets the requirements of different wavelengths for different optical cavity lengths of the light-emitting devices.

[0016] Optionally, in this embodiment of the invention, a microcavity adjustment unit 70 for adjusting the optical cavity length of the light-emitting device is disposed between the first electrode 60 and the auxiliary electrode 51. The microcavity adjustment unit 70 includes SiOx or SiNx, and the cavity length of the optical cavity of the light-emitting device is adjusted by adjusting the thickness of the film layer formed by SiOx or SiNx.

[0017] Optionally, in this embodiment of the invention, the light-emitting device includes a first light-emitting device, a second light-emitting device, and a third light-emitting device that emit different colors of light. It can also be labeled as a first type of light-emitting device, a second type of light-emitting device, and a third type of light-emitting device that emit different colors of light. That is, the first, second, and third are distinctions in terms of the categories of light-emitting devices that emit different colors of light, rather than a quantity measurement. Optionally, the first light-emitting device is a red light-emitting device, the second light-emitting device is a green light-emitting device, and the third light-emitting device is a blue light-emitting device. Since the microcavity adjustment unit 70 is disposed between the first electrode 60 and the auxiliary electrode 51, the thickness of the microcavity adjustment unit 70 is negatively correlated with the cavity length of the optical cavity of the light-emitting device. In this embodiment of the invention, the thickness H1 of the microcavity adjustment unit 70 of the red light-emitting device is less than the thickness H2 of the microcavity adjustment unit 70 of the green light-emitting device and the thickness H3 of the microcavity adjustment unit 70 of the blue light-emitting device. Optionally, the thickness H1 of the microcavity adjustment unit 70 of the red light device is less than 400 Å, and the thickness H2 of the microcavity adjustment unit 70 of the green light device is less than 800 Å, and the thickness H3 of the microcavity adjustment unit 70 of the blue light device is less than 1200 Å. Further optionally, the thickness H1 of the microcavity adjustment unit 70 of the red light device is 0 Å, and 300 Å ≤ the thickness H2 of the microcavity adjustment unit 70 of the green light device ≤ 500 Å, and 700 Å ≤ the thickness H3 of the microcavity adjustment unit 70 of the blue light device ≤ 900 Å. Further optionally, the thickness H1 of the microcavity adjustment unit 70 of the red light device is 0 Å, the thickness H2 of the microcavity adjustment unit 70 of the green light device is 400 Å, and the thickness H3 of the microcavity adjustment unit 70 of the blue light device is 800 Å. In the above optional embodiments, when the thickness H1 of the microcavity adjustment unit 70 of the red light device is 0 Å, it means that the microcavity adjustment unit 70 is not provided in the red light emitting device. At this time, the first electrode 60 of the red light device is adjacent to the auxiliary electrode 51, that is, the first electrode 60 of the red light device is in direct contact with the auxiliary electrode 51.

[0018] In the embodiments provided by the present invention, the provided display panel structure may include a light-emitting device layer, which is located on the side of the driving device layer away from the substrate and includes multiple light-emitting devices. That is, the light-emitting device layer is the layer where the light-emitting devices are located. The driving device layer includes an array of driving devices for driving the light-emitting devices to emit light.

[0019] In the embodiments provided by the present invention, a planarization layer 40 is provided between the light-emitting device layer and the driving device layer, and the auxiliary electrode layer 50 overlaps with the first metal layer 30 of the driving device layer through a via formed on the planarization layer 40. Optionally, the auxiliary electrode layer 50 is ITO (indium tin oxide) or IGZO (indium gallium zinc oxide, also known as indium gallium zinc oxide mixture).

[0020] In the embodiments provided by the present invention, the light-emitting device includes a first electrode 60, a light-emitting functional layer, and a second electrode. The light-emitting functional layer is located on the side of the auxiliary electrode 51 away from the substrate, and the second electrode is located on the side of the light-emitting functional layer away from the substrate. Figure 11As shown, the common light-emitting devices in display panels are those with three colors: R, G, and B.

[0021] Optionally, the first electrode 60 is the anode of the light-emitting device, and the second electrode is the cathode of the light-emitting device.

[0022] like Figure 2 As shown, the photoresist 80 above the first electrode layer 600 is patterned into multiple spaced-apart first electrode 60 structures, and then formed as shown in the figure through wet etching, stripping, and crystallization processes. Figure 3 The simplified structure of the display panel shown is as follows. Figure 3 Multiple first electrodes 60 are spaced apart.

[0023] refer to Figure 4 , Figure 5 In the fabrication process, a film layer is coated on the first electrode 60 as an etching barrier layer. This film layer can be an oxide film layer, such as an IZO oxide film layer, or a film layer formed by IGZO or Cu that can act as an etching barrier hard mask. At the corresponding light-emitting device location, photoresist is patterned, and then a buffer layer is formed at the corresponding light-emitting device location through wet etching and stripping processes, resulting in... Figure 5 The simplified structure of the display panel is shown.

[0024] refer to Figure 6 In the preparation process, Figure 5 Based on the structure shown, a microcavity adjustment layer 700 thin film is formed. This thin film can be a SiOx film or a SiNx film. A film layer is formed above the microcavity adjustment layer 700 as an etching barrier layer. This film layer can be an oxide film layer, such as an IZO oxide film layer, or an IGZO or Cu film layer. Photoresist is patterned at the corresponding light-emitting device locations. Then, through wet etching and lift-off processes, the microcavity adjustment layer 700 and the buffer layer 90 are formed at the aforementioned corresponding light-emitting device locations, resulting in the structure shown. Figure 7 The simplified structure of the display panel is shown.

[0025] refer to Figure 7 , Figure 8 ,exist Figure 7 Based on the structure shown, a microcavity adjustment layer 700 thin film is formed. This thin film can be a SiOx film or a SiNx film. At the corresponding light-emitting device location, photoresist is patterned, and through dry etching and lift-off processes, a microcavity adjustment layer 700 and a buffer layer 90 are formed at the corresponding light-emitting device location. Two microcavity adjustment layers 700 are formed above the light-emitting device, as shown. Figure 9 The simplified structure of the display panel is shown.

[0026] refer to Figure 9 , Figure 10 ,exist Figure 9Based on the structure shown, the buffer layer 90 is removed, the auxiliary electrode layer 50 is prepared, the photoresist is patterned, and after etching and lift-off processes, the desired structure is obtained. Figure 11 The simplified structure of the display panel shown has a microcavity adjustment unit 70 consisting of a 0-layer, a 1-layer, and a 2-layer microcavity adjustment layer 700 between the auxiliary electrode 51 and the first electrode 60 at different light-emitting device positions. The auxiliary electrode 51 formed by the auxiliary electrode layer 50 is directly electrically connected to the first metal layer 30 of the driving device layer 20 without the need for additional processes to connect the first electrode 60 to the first metal layer 30.

[0027] On the other hand, the present invention provides a method for manufacturing a display panel, which can be the display panel provided in the embodiments of the present invention. The manufacturing method includes: Step S110: Provide a substrate for fabricating a display panel; Step S120: Form a driving device layer on top of the substrate; Step S130: A planarization layer 40 is formed above the driving device layer, and a via is formed by pattern etching to connect the first metal layer 30; Step S140: A first electrode layer 600 is deposited on top of the planarization layer 40. After patterning etching and stripping of the photoresist 80, a high-temperature annealing process is performed to crystallize the surface of the first electrode layer 600. Step S150: A hard mask layer is formed above the first electrode 60, and a buffer layer 90 is formed at the corresponding light-emitting device position by patterned etching; Step S160: A microcavity adjustment layer is formed above the first electrode 60, and a microcavity adjustment unit 70 is formed at the corresponding light-emitting device position by patterned etching; Step S170: An auxiliary electrode layer 50 is formed on the microcavity adjustment layer 700, and an electrical connection structure between the auxiliary electrode layer 50 and the first metal layer 30 is formed by etching.

[0028] Optionally, in the method for preparing the display panel provided by the present invention, the buffer layer 90 can be an IZO thin film with a thickness controlled between 300 Å and 1000 Å. In the preparation method, this film protects the anode of the display panel and acts as a barrier against dry etching, thus preventing damage to the anode caused by the etching process. In an optional embodiment, the buffer layer 90 can also be a thin film formed of IGZO or Cu, with a thickness also controlled between 300 Å and 1000 Å. In a foreseeable embodiment, other materials with etching-blocking properties can also be used to prepare the buffer layer 90, and its thickness can be adjusted according to actual needs. It is understood that in step S150, forming a hard mask layer above the first electrode 60 means forming a hard mask layer on the previously prepared plurality of first electrodes 60, and the formed hard mask layer covers the plurality of first electrodes 60.

[0029] In the preparation method provided by the present invention, step S140: a first electrode layer 600 is deposited and formed on the planarization layer 40. After patterning etching and photoresist 80 stripping, a high-temperature annealing process is performed to crystallize the surface of the first electrode layer 600. In this step, anodes corresponding to multiple light-emitting devices are formed. It should be noted that the so-called anode in the present invention can actually be regarded as the anode body. In the subsequent process, an auxiliary electrode 51 is formed above the anode, that is, above the anode body. The auxiliary electrode 51 is the upper surface of the anode that contacts the OLED functional layer, and at the same time serves as a lead to overlap with the top metal of the driving device layer, that is, overlap with the first metal layer 30.

[0030] Step S160: A microcavity adjustment layer 700 is formed above the first electrode 60. After patterned etching, a microcavity adjustment unit 70 is formed at the corresponding light-emitting device position. It should be further explained that the microcavity adjustment unit 70 in this embodiment of the invention is ultimately located between the anode and the auxiliary electrode 51. The cavity length of the optical cavity in the light-emitting device is adjusted by adjusting the thickness of the microcavity adjustment unit 70. Since the cavity length of the optical cavity of the red light device is the shortest, and the etching process has the least impact on the anode of the red light device due to the order of the processes, the microcavity adjustment unit 70 of the red light device can be set to 0 Å. At this time, the anode of the red light device is in direct contact with the auxiliary electrode 51 above it in the final fabrication process.

[0031] Taking an example where the thickness H1 of the microcavity adjustment unit 70 in the red light device is 0 Å, the thickness H2 of the microcavity adjustment unit 70 in the green light device is 400 Å, and the thickness H3 of the microcavity adjustment unit 70 in the blue light device is 800 Å, the hard mask layer is an IZO thin film, the microcavity adjustment layer 700 is a SiOx thin film, and the auxiliary electrode layer 50 is ITO; the fabrication process of this embodiment may include the following steps: Step S110: Provide a substrate for fabricating a display panel; Step S120: Form a driving device layer on top of the substrate; Step S130: A planarization layer 40 is formed above the driving device layer, and a via is formed by pattern etching to connect the first metal layer 30; Step S140: A first electrode layer 600 is deposited on top of the planarization layer 40. After patterning etching and stripping of the photoresist 80, a high-temperature annealing process is performed to crystallize the surface of the first electrode layer 600. This step forms the anode of multiple light-emitting devices and the planarization layer via of the first metal layer 30 of the drive device layer. The multiple light-emitting devices include a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein the high-temperature annealing temperature is set to 160℃-270℃.

[0032] Step S150: A hard mask layer, i.e. an IZO thin film, is formed above the first electrode 60, and a buffer layer 90 is formed at the corresponding light-emitting device position by patterning etching. This step also includes patterning the photoresist 80 at the location of the first light-emitting device. In the subsequent etching process, the IZO thin film at other locations not patterned by the photoresist 80 is etched away, resulting in... Figure 5 The graphic structure shown; Step S160: A SiOx thin film is formed above the first electrode 60, and a microcavity adjustment unit 70 is formed at the corresponding light-emitting device position by patterning etching; This step also includes repeating the step of forming an IZO thin film above the first electrode 60 in step S150, patterning the photoresist 80 at the location of the second light-emitting device, and in the subsequent etching process, etching away the IZO thin film at other locations not patterned by the photoresist 80, to obtain... Figure 7 The graphic structure shown; This step also includes repeating the step of forming an IZO thin film above the first electrode 60 in step S150, patterning the photoresist 80 at the location of the third light-emitting device, and in the subsequent etching process, etching away the IZO thin film at other locations not patterned by the photoresist 80, to obtain... Figure 9 The graphic structure shown; This step also includes a stripping process to remove the IZO film remaining above the first and second light-emitting devices, resulting in... Figure 10 The described pattern structure has no SiOx film above the first light-emitting device, a layer of SiOx film above the second light-emitting device, and two layers of SiOx film above the third light-emitting device. The SiOx film thickness is set to 400 Å. As mentioned above, the first light-emitting device is a red light-emitting device, the second light-emitting device is a green light-emitting device, and the third light-emitting device is a blue light-emitting device. In this embodiment of the invention, a light-emitting device with three colors of light (red, green, and blue) is used as an example. However, the preparation method involved in this embodiment of the invention is not limited to light-emitting devices with three colors of light (red, green, and blue). Light-emitting devices with other colors of light can also be used. In this case, it is only necessary to adjust the thickness of the SiOx film according to the wavelength of the actual color of light or add step S160. It is not necessary to repeat the description. Through the above process steps, the thickness H1 of the microcavity adjustment unit 70 of the red light device is 0 Å, the thickness H2 of the microcavity adjustment unit 70 of the green light device is 400 Å, and the thickness H3 of the microcavity adjustment unit 70 of the blue light device is 800 Å. The microcavity adjustment unit 70 is a SiOx thin film.

[0033] Step S170: An auxiliary electrode layer 50, i.e. an ITO thin film, is formed on the microcavity adjustment layer 700, and an electrical connection structure between the auxiliary electrode layer 50 and the first metal layer 30 is formed by etching.

[0034] Through the above process steps, the thickness H1 of the microcavity adjustment unit 70 for the red light device is 0 Å, the thickness H2 of the microcavity adjustment unit 70 for the green light device is 400 Å, and the thickness H3 of the microcavity adjustment unit 70 for the blue light device is 800 Å. The microcavity adjustment unit 70 is a SiOx thin film, and the auxiliary electrode 51 is an ITO thin film, with the ITO thin film electrically connected to the first metal layer 30 of the driving device layer. Figure 11 The simplified structure shown.

[0035] Optionally, embodiments of the present invention also provide a display device, which includes the display panel provided in any embodiment of the present invention. Therefore, the display device provided in embodiments of the present invention also has the beneficial effects described in any of the above embodiments. Figure 13 This is a schematic diagram of the structure of a display device 200 provided in an embodiment of the present invention, with reference to... Figure 13 The display device 200 can be Figure 13 The mobile phone display panel 100 shown can also be the panel of any electronic product with display function, including but not limited to the following categories: television, laptop, desktop monitor, tablet computer, digital camera, smart bracelet, smart glasses, vehicle display, medical equipment, industrial control equipment, touch interactive terminal, etc. The embodiments of the present invention do not make any special limitations on this.

[0036] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A display panel, characterized in that, include: substrate; A driving device layer is located on one side of the substrate, the driving device layer including a first metal layer, the first metal layer being disposed on the side of the driving device layer away from the substrate; The first electrode layer, located on the side of the driving device layer away from the substrate, includes a plurality of first electrodes spaced apart. An auxiliary electrode layer is located on the side of the first electrode layer away from the substrate, and includes a plurality of auxiliary electrodes spaced apart, with the first electrode and the auxiliary electrodes being disposed correspondingly to each other; A microcavity adjustment layer, disposed along the thickness direction of the substrate between the first electrode layer and the auxiliary electrode layer, includes a plurality of spaced-apart microcavity adjustment units; wherein The first electrode layer is electrically connected to the first metal layer through the auxiliary electrode layer; the microcavity adjustment unit corresponding to light-emitting devices emitting the same color light has the same thickness, and the microcavity adjustment unit corresponding to light-emitting devices emitting different colors light has different thicknesses.

2. The display panel according to claim 1, characterized in that, The light-emitting device includes a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein the first light-emitting device, the second light-emitting device, and the third light-emitting device are light-emitting devices that emit light of different colors; Preferably, the first light-emitting device is a red light-emitting device, the second light-emitting device is a green light-emitting device, and the third light-emitting device is a blue light-emitting device.

3. The display panel according to claim 2, characterized in that, The microcavity adjustment unit includes a first microcavity adjustment unit, a second microcavity adjustment unit, and a third microcavity adjustment unit, which are used to adjust the cavity lengths of the first light-emitting device, the second light-emitting device, and the third light-emitting device, respectively. The thickness H1 of the first microcavity adjustment unit is less than the thickness H2 of the second microcavity adjustment unit, and the thickness H2 of the second microcavity adjustment unit is less than the thickness H3 of the third microcavity adjustment unit. Preferably, 0Å≤H1<400Å, 200Å≤H2<800Å, 400Å≤H3≤1200Å; more preferably, H1=0Å, 300Å≤H2≤500Å, 700Å≤H3≤900Å.

4. The display panel according to claim 1, characterized in that, The microcavity adjustment layer includes SiOx or SiNx.

5. The display panel according to claim 1, characterized in that, The light-emitting device is located in the light-emitting device layer, and the light-emitting device layer is located on the side of the driving device layer away from the substrate; The driving device layer includes an array of driving devices, which are used to drive the light-emitting device to emit light. The auxiliary electrode is connected to the first metal layer through a via. Preferably, the auxiliary electrode layer comprises ITO or IGZO.

6. The display panel according to claim 5, characterized in that, The light-emitting device includes a first electrode, a light-emitting functional layer, and a second electrode. The light-emitting functional layer is located on the side of the auxiliary electrode away from the substrate, and the second electrode is located on the side of the light-emitting functional layer away from the substrate. The first electrode is the anode of the light-emitting device, and the second electrode is the cathode of the light-emitting device.

7. A method for manufacturing a display panel according to any one of claims 1-6, characterized in that, include A substrate for fabricating the display panel is provided; A driving device layer is formed above the substrate; A planarization layer is formed above the driving device layer, and the planarization layer is patterned and etched to form vias that connect to the first metal layer; A first electrode layer is deposited on top of the planarization layer. After patterning etching and stripping of the photoresist, a high-temperature annealing process is performed to crystallize the surface of the first electrode layer to form multiple first electrodes. A hard mask layer is formed over the plurality of first electrodes, and the hard mask layer is patterned and etched to form a buffer layer at the corresponding position of the light-emitting device; A microcavity adjustment layer is formed above the plurality of first electrodes, and the microcavity adjustment layer is patterned and etched to form microcavity adjustment units at the corresponding positions of the light-emitting devices; An auxiliary electrode layer is formed on the microcavity adjustment layer, and the auxiliary electrode layer is patterned and etched to form auxiliary electrodes corresponding to the plurality of first electrodes. The auxiliary electrodes are electrically connected to the first metal layer through the corresponding vias.

8. The preparation method according to claim 7, characterized in that, The first hard mask layer includes at least one of IZO, IGZO, ITO, or Cu; The microcavity conditioning layer includes at least one of SiOx or SiNx; The thickness of the hard mask layer is 300 Å - 1000 Å.

9. The preparation method according to claim 7, characterized in that, The light-emitting devices include a first light-emitting device, a second light-emitting device, and a third light-emitting device that emit different colors of light. Before forming a microcavity adjustment unit on the corresponding light-emitting device, the buffer layer is formed on all the other light-emitting devices.

10. A display device, characterized in that, The display panel includes the display panel according to any one of claims 1-6 or the display panel manufactured by the preparation method according to any one of claims 7-9.

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