Lamination efficiency-increasing transformation method for old crystalline silicon array

Abstract

The invention relates to a lamination efficiency-increasing transformation method for an old crystalline silicon array, and the method comprises the following steps: separating a crystalline silicon battery assembly from an inverter, and then carrying out the dust removal and cleaning of the surface of the separated crystalline silicon battery assembly; a perovskite assembly is installed on the upper surface of a cleaned crystalline silicon cell assembly, then glue is injected between the crystalline silicon cell assembly and the perovskite assembly, the crystalline silicon cell assembly is fixedly connected with the perovskite assembly, and lamination efficiency-increasing transformation of an old crystalline silicon array is achieved. According to the laminated efficiency-increasing transformation method provided by the invention, the perovskite assembly can be arranged on the basis of the low-efficiency old crystal silicon cell, devices such as a bracket, a cable and an inverter with relatively long service life do not need to be scrapped, the old crystal silicon array is upgraded and transformed, and the cost is reduced. And the efficiency-increasing transformation of the old photovoltaic power station is realized under the condition of limited cost.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, and relates to a method for upgrading the efficiency of solar cells, and more particularly to a method for upgrading the efficiency of old crystalline silicon arrays through stacking. Background Technology

[0002] The efficiency of old photovoltaic arrays formed by crystalline silicon photovoltaic modules is low, only about 15%, which is significantly different from the efficiency of newly produced crystalline silicon modules, which is 22% to 24%. Therefore, it is necessary to upgrade the efficiency of old crystalline silicon photovoltaic arrays.

[0003] However, the components that make up crystalline silicon photovoltaic modules, such as the support structure, cables, and inverters, have a lifespan of over 30 years. If modules that haven't reached their lifespan are directly scrapped during efficiency upgrades, it will result in resource waste. Combining crystalline silicon cells with perovskite cells allows the perovskite top cells to absorb most of the visible light spectrum, while the crystalline silicon bottom cells absorb most of the infrared and near-infrared light, as well as a small amount of visible light, thus improving the efficiency of the photovoltaic modules.

[0004] Therefore, how to effectively upgrade old crystalline silicon arrays by combining them with perovskite solar cells is a technical problem that urgently needs to be solved. Summary of the Invention

[0005] The purpose of this invention is to provide a method for upgrading and transforming old crystalline silicon arrays by stacking perovskite modules on the basis of low-efficiency old crystalline silicon cells, without the need to scrap long-life brackets, cables and inverters, etc., thus realizing the upgrading and transformation of old crystalline silicon arrays and achieving effective transformation of old photovoltaic power plants under limited cost conditions.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] This invention provides a method for upgrading the efficiency of old crystalline silicon arrays using a stacked structure, the method comprising the following steps:

[0008] The crystalline silicon cell module is separated from the inverter, and then the surface of the separated crystalline silicon cell module is dusted and cleaned.

[0009] The perovskite module is installed on the upper surface of the cleaned crystalline silicon cell module. Then, adhesive is injected between the crystalline silicon cell module and the perovskite module to fix the crystalline silicon cell module and the perovskite module in place, thereby realizing the stacked efficiency upgrade of the old crystalline silicon array.

[0010] The stacked efficiency improvement method provided by this invention can set up perovskite modules on the basis of low-efficiency old crystalline silicon cells without scrapping long-life brackets, cables and inverters, etc., thus realizing the upgrade and transformation of old crystalline silicon arrays and achieving effective transformation of old photovoltaic power plants under limited cost conditions.

[0011] Preferably, the splitting is performed at a temperature below 30°C.

[0012] Preferably, the ambient light intensity of the split is below 200 lux.

[0013] Preferably, the split is performed when the inverter is stopped from starting.

[0014] Preferably, the edge of the perovskite module is recessed by 0 mm to 5 mm relative to the upper surface edge of the crystalline silicon cell module.

[0015] Preferably, the crystalline silicon cell assembly includes a crystalline silicon cell frame and crystalline silicon cells fixed by the crystalline silicon cell frame.

[0016] The perovskite module includes a perovskite front glass, a perovskite back glass, and a perovskite cell sandwiched between the perovskite front glass and the perovskite back glass.

[0017] The perovskite backplate glass is located on the side closest to the frame of the crystalline silicon cell.

[0018] Preferably, the perovskite assembly includes at least one injection hole penetrating the perovskite assembly.

[0019] Preferably, the injection hole corresponds to the area of ​​the crystalline silicon cell frame.

[0020] Preferably, the distance between the injection hole and the long side of the perovskite module is 15mm to 30mm, and the distance between the injection hole and the short side of the perovskite module is 12mm to 32mm.

[0021] Preferably, the cross-sectional shape of the injection hole includes any one of circular, square, or elliptical shapes.

[0022] Preferably, the perovskite module has a wiring portion on its surface away from the crystalline silicon cell module.

[0023] The wiring section corresponds to the area of ​​the crystalline silicon cell frame.

[0024] Preferably, the step of mounting the perovskite module onto the upper surface of the cleaned crystalline silicon cell module includes: providing an adhesive portion with a thickness of 0.5 mm to 1 mm on the surface of the crystalline silicon cell frame near the perovskite module, and then bonding the perovskite module onto the upper surface of the cleaned crystalline silicon cell module.

[0025] Preferably, the light transmittance of the adhesive used for injection is 88% or higher.

[0026] Preferably, the viscosity of the adhesive used for injection is between 900 cps and 1500 cps.

[0027] Preferably, the step of fixing the crystalline silicon cell module to the perovskite module includes: using transparent tape to fix the non-cell area of ​​the perovskite module to the frame area of ​​the crystalline silicon cell.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] The stacked efficiency improvement method provided by this invention can set up perovskite modules on the basis of low-efficiency old crystalline silicon cells without scrapping long-life brackets, cables and inverters, etc., thus realizing the upgrade and transformation of old crystalline silicon arrays and achieving effective transformation of old photovoltaic power plants under limited cost conditions. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of the structure of a crystalline silicon solar cell module provided in Embodiment 1 of the present invention.

[0031] Figure 2 This is a schematic diagram of the stacked component after the stacked efficiency improvement modification in Embodiment 1 of the present invention.

[0032] Figure 3 This is a schematic diagram of the structure of the perovskite component provided in Embodiment 1 of the present invention.

[0033] 1. Crystalline silicon cell module; 1-1. Crystalline silicon cell frame; 1-2. Crystalline silicon cell; 2. Injection layer; 3. Perovskite module; 3-1. Injection hole; 3-2. Wiring section. Detailed Implementation

[0034] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0035] An embodiment of the present invention provides a method for upgrading the efficiency of an old crystalline silicon array using a stacked structure, the method comprising the following steps:

[0036] The crystalline silicon cell module is separated from the inverter, and then the surface of the separated crystalline silicon cell module is dusted and cleaned.

[0037] The perovskite module is installed on the upper surface of the cleaned crystalline silicon cell module. Then, adhesive is injected between the crystalline silicon cell module and the perovskite module to fix the crystalline silicon cell module and the perovskite module in place, thereby realizing the stacked efficiency upgrade of the old crystalline silicon array.

[0038] The efficiency of old crystalline silicon solar modules is only about 15%, which is significantly lower than the efficiency of current crystalline silicon solar modules of 22% to 24%. Continuing to use old crystalline silicon solar modules is not cost-effective. Replacing old crystalline silicon solar modules entirely would result in the waste of components such as brackets, cables, and inverters. To address this technical problem, the stacked efficiency improvement method provided by this invention can install perovskite modules on the basis of low-efficiency old crystalline silicon solar cells. This eliminates the need to scrap long-life brackets, cables, and inverters. The perovskite modules can absorb most of the visible light spectrum of solar energy, while the old crystalline silicon solar modules absorb most of the infrared and near-infrared light, as well as a small amount of visible light. This achieves effective upgrading of old crystalline silicon photovoltaic modules under limited cost conditions.

[0039] In the stacked efficiency improvement method provided by the present invention, in order to reduce the impact of splitting on the performance of crystalline silicon solar cell modules, it is necessary to control the splitting temperature and illumination conditions.

[0040] In some embodiments, the splitting is performed at a temperature below 30°C, such as 15°C, 18°C, 20°C, 24°C, 25°C, 28°C, or 30°C, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0041] In some embodiments, the ambient light intensity of the split is below 200 lux, for example, it can be 0 lux, 30 lux, 50 lux, 80 lux, 100 lux, 150 lux or 200 lux, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0042] In some embodiments, the light-receiving surface of the crystalline silicon cell module is covered with a black covering during the removal process.

[0043] In some embodiments, the split is performed while the inverter is stopped from starting.

[0044] In some embodiments, the crystalline silicon solar cell module includes multiple crystalline silicon solar cells connected in series. Too many crystalline silicon solar cells connected in series are not conducive to subsequent stacked efficiency improvement. Therefore, the multiple crystalline silicon solar cells connected in series can be separated according to the operating conditions. After the stacked efficiency improvement is completed, the separated crystalline silicon solar cells can be reconnected.

[0045] In some embodiments, the edge of the perovskite module is recessed from the upper surface edge of the crystalline silicon cell module by 0 mm to 5 mm, for example, it can be 0 mm, 1 mm, 2 mm, 3 mm or 5 mm, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable; as a preferred technical solution, the recess distance of the edge of the perovskite module relative to the edge of the crystalline silicon cell module is not 0.

[0046] In some embodiments, the crystalline silicon cell assembly includes a crystalline silicon cell frame and a crystalline silicon cell fixed by the crystalline silicon cell frame.

[0047] The perovskite module includes a perovskite front glass, a perovskite back glass, and a perovskite cell sandwiched between the perovskite front glass and the perovskite back glass.

[0048] The perovskite backplate glass is located on the side closest to the frame of the crystalline silicon cell.

[0049] In some embodiments, the perovskite assembly includes at least one injection hole through the perovskite assembly, for example, one or two.

[0050] The purpose of the injection hole in this invention is to facilitate injection between the crystalline silicon solar cell module and the perovskite module. However, the injection process needs to avoid adversely affecting the performance of the original crystalline silicon solar cell module. Therefore, the preferred technical solution requires the selection of the injection hole location.

[0051] In some embodiments, the injection hole corresponds to the area of ​​the crystalline silicon cell frame.

[0052] To facilitate adhesive injection between the crystalline silicon solar cell module and the perovskite module, an injection hole penetrates the perovskite module. The invention's description of the injection hole corresponding to the area of ​​the crystalline silicon solar cell frame means that the adhesive outlet of the injection hole is on the upper surface of the crystalline silicon solar cell frame; as a further preferred embodiment, the projection surfaces of both the injection hole and the crystalline silicon solar cell frame are on the upper surface of the crystalline silicon solar cell frame.

[0053] When performing the adhesive injection in this invention, the adhesive used has a certain viscosity. In order to make the adhesive layer between the crystalline silicon solar cell module and the perovskite module uniform, the position of the adhesive injection hole needs to be optimally set.

[0054] In some embodiments, the distance between the injection hole and the long side of the perovskite component is 15mm to 30mm, for example, it can be 15mm, 18mm, 20mm, 25mm or 30mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0055] In some embodiments, the distance between the injection hole and the short side of the perovskite component is 12mm to 32mm, for example, it can be 12mm, 15mm, 20mm, 25mm, 30mm or 32mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0056] The long side of the perovskite module is the relatively long side of the perovskite module. The distance between the injection hole and the long side of the perovskite module refers to the distance between the injection hole and the long side of the nearest perovskite module. Specifically, the distance between the injection hole and the long side of the perovskite module refers to the distance between the central axis of the injection hole and the long side of the perovskite module.

[0057] The short side of the perovskite module is the relatively short side of the perovskite module. The distance between the injection hole and the short side of the perovskite module refers to the distance between the injection hole and the short side of the nearest perovskite module. Specifically, the distance between the injection hole and the short side of the perovskite module refers to the distance between the central axis of the injection hole and the short side of the perovskite module.

[0058] In some embodiments, the cross-sectional shape of the injection hole includes any one of circular, square, or elliptical shapes.

[0059] In some embodiments, the dimension of the parallel component along its long side is 4-8 mm, and the dimension of the parallel component along its short side is 4-16 mm.

[0060] In some embodiments, the perovskite module has a wiring portion on its surface away from the crystalline silicon cell module.

[0061] The wiring section corresponds to the area of ​​the crystalline silicon cell frame.

[0062] In this invention, the wiring portion of the perovskite module is positioned in the area corresponding to the frame of the crystalline silicon cell, which reduces the adverse impact of the wiring portion on the efficiency of the crystalline silicon cell. The area where the wiring portion corresponds to the frame of the crystalline silicon cell means that the projection of the wiring portion onto the frame of the crystalline silicon cell falls entirely on the upper surface of the frame.

[0063] In some embodiments, the wiring portion is elongated, with its long side parallel to the short side of the perovskite component, and is installed at the perovskite lead-out hole of the perovskite component.

[0064] In some embodiments, mounting the perovskite module onto the upper surface of the cleaned crystalline silicon cell module includes: providing an adhesive portion with a thickness of 0.5 mm to 1 mm on the surface of the crystalline silicon cell frame near the perovskite module, and then bonding the perovskite module onto the upper surface of the cleaned crystalline silicon cell module.

[0065] The present invention optimizes the thickness of the adhesive portion, which facilitates smooth adhesive injection between the crystalline silicon solar cell module and the perovskite module. As a preferred technical solution, the thickness of the adhesive portion is 0.5mm to 1mm, for example, it can be 0.5mm, 0.6mm, 0.8mm, 0.9mm or 1mm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0066] In some embodiments, the edge of the adhesive portion is recessed from the edge of the crystalline silicon module by 0 mm to 2 mm, for example, it can be 0 mm, 0.5 mm, 1 mm, 1.5 mm or 2 mm, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0067] In some embodiments, the adhesive portion includes double-sided adhesive.

[0068] In some embodiments, the adhesive used for injection has a light transmittance of 88% or higher.

[0069] In some embodiments, the viscosity of the adhesive used for injection is between 900 cps and 1500 cps, for example, 900 cps, 1000 cps, 1200 cps, 1300 cps or 1500 cps, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0070] This invention does not limit the specific type of adhesive used for injection, as long as it can meet the requirements of light transmittance of 88% or more and viscosity of 900cps to 1500cps. For example, the adhesive used for injection includes single-component adhesive and / or two-component adhesive, preferably Dow Corning PV6212 and / or ELASTOSIL SOLAR 2200.

[0071] When using adhesive for injection, in order to avoid the adhesive curing from having an adverse effect on subsequent injections, the injection time should be controlled within 20 minutes. For example, it can be 5 minutes, 8 minutes, 10 minutes, 15 minutes or 20 minutes, but it is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0072] In some embodiments, the fixed connection between the crystalline silicon cell module and the perovskite module includes: using transparent tape to fix the non-cell area of ​​the perovskite module to the frame area of ​​the crystalline silicon cell.

[0073] This invention uses transparent tape to fix the perovskite module to the crystalline silicon cell. Optionally, the transparent tape can be removed after the adhesive used for injection has completely cured. The curing time of the adhesive is related to the ambient temperature and humidity. Generally, the curing time is 1 to 2 days in summer and 3 to 5 days in winter. To ensure complete curing, it is preferable to remove the transparent tape after 5 days or more.

[0074] In some embodiments, the dust removal method includes manual dust removal or automatic dust removal.

[0075] In some embodiments, the purpose of cleaning is to remove dirt from the surface. The present invention does not limit the specific cleaning method, as long as it can achieve the purpose of removing dirt.

[0076] The stacked efficiency improvement method provided by the present invention also includes the necessary electrical connection after combining the crystalline silicon solar cell module and the perovskite module, which is not specifically limited by the present invention.

[0077] Example 1

[0078] This embodiment provides a method for upgrading the efficiency of an old crystalline silicon array with a stacked efficiency of 15.8% before the upgrade; the crystalline silicon cell module in this embodiment (see...) Figure 1 The perovskite module in this embodiment includes a crystalline silicon cell frame and a crystalline silicon cell fixed by the crystalline silicon cell frame. Figure 3 The device includes a perovskite front glass, a perovskite back glass, and a perovskite solar cell sandwiched between the perovskite front glass and the perovskite back glass; the perovskite back glass is located on the side closest to the frame of the crystalline silicon solar cell.

[0079] The perovskite module includes two circular injection holes penetrating the perovskite module. The two injection holes are symmetrically arranged on the surface of the perovskite module, and the distance between them and the long side of the perovskite module is 25 mm, and the distance between them and the short side of the perovskite module is 20 mm.

[0080] The perovskite module has a long strip-shaped wiring portion on its surface away from the crystalline silicon cell module, with the long side parallel to the short side of the perovskite module. The wiring portion corresponds to the area of ​​the crystalline silicon cell frame.

[0081] The layered efficiency improvement method includes the following steps:

[0082] (1) Under the conditions of 25°C, 200 lux ambient light intensity and inverter stop starting, the crystalline silicon cell module is separated from the inverter. Then, the surface of the separated crystalline silicon cell module is dusted and cleaned to obtain a clean crystalline silicon cell surface and the upper surface of the crystalline silicon cell frame.

[0083] (2) A double-sided adhesive with a thickness of 0.8 mm is provided on the upper surface of the crystalline silicon cell frame. The edge of the double-sided adhesive is recessed by 1 mm relative to the upper surface edge of the crystalline silicon cell module. Then, the perovskite module is bonded to the double-sided adhesive. The edge of the perovskite module is recessed by 2 mm relative to the upper surface edge of the crystalline silicon cell module.

[0084] (3) Using Dow Corning PV6212 adhesive, mix its A and B components evenly in a 1:1 ratio for 4 minutes, and then inject it into the area enclosed by the perovskite module, crystalline silicon cell and crystalline silicon cell frame through the injection hole. The injection time is 20 minutes.

[0085] (4) Use transparent tape to fix the non-cell area of ​​the perovskite module to the frame area of ​​the crystalline silicon cell. After the adhesive has completely cured to form a potting layer, remove the transparent tape to obtain a four-terminal stacked module (see...). Figure 2 Its efficiency is 21.1%.

[0086] Example 2

[0087] This embodiment provides a method for upgrading the efficiency of an old crystalline silicon array, the old crystalline silicon array having an efficiency of 15.8% before the upgrade; the crystalline silicon cell module in this embodiment includes a crystalline silicon cell frame and crystalline silicon cells fixed by the crystalline silicon cell frame; the perovskite module in this embodiment includes a perovskite front glass, a perovskite back glass, and a perovskite cell sandwiched between the perovskite front glass and the perovskite back glass; the perovskite back glass is located on the side closest to the crystalline silicon cell frame.

[0088] The perovskite module includes two circular injection holes penetrating the perovskite module. The two injection holes are symmetrically arranged on the surface of the perovskite module, and the distance between them and the long side of the perovskite module is 15 mm, and the distance between them and the short side of the perovskite module is 12 mm.

[0089] The perovskite module has a long strip-shaped wiring portion on its surface away from the crystalline silicon cell module, with the long side parallel to the short side of the perovskite module. The wiring portion corresponds to the area of ​​the crystalline silicon cell frame.

[0090] The layered efficiency improvement method includes the following steps:

[0091] (1) Under the conditions of 25°C, 200 lux ambient light intensity and inverter stop starting, the crystalline silicon cell module is separated from the inverter. Then, the surface of the separated crystalline silicon cell module is dusted and cleaned to obtain a clean crystalline silicon cell surface and the upper surface of the crystalline silicon cell frame.

[0092] (2) A double-sided adhesive with a thickness of 0.8 mm is provided on the upper surface of the crystalline silicon cell frame, and the edge of the double-sided adhesive is recessed by 0 mm relative to the upper surface edge of the crystalline silicon cell module. Then the perovskite module is bonded to the double-sided adhesive; so that the edge of the perovskite module is recessed by 0 mm relative to the upper surface edge of the crystalline silicon cell module.

[0093] (3) Using Dow Corning PV6212 adhesive, mix its A and B components evenly in a 1:1 ratio for 4 minutes, and then inject it into the area enclosed by the perovskite module, crystalline silicon cell and crystalline silicon cell frame through the injection hole. The injection time is 20 minutes.

[0094] (4) Use transparent tape to fix the non-cell area of ​​the perovskite module to the frame area of ​​the crystalline silicon cell. After the adhesive has completely cured to form a glue layer, remove the transparent tape to obtain a four-terminal stacked module.

[0095] Example 3

[0096] This embodiment provides a method for upgrading the efficiency of an old crystalline silicon array, the old crystalline silicon array having an efficiency of 15.8% before the upgrade; the crystalline silicon cell module in this embodiment includes a crystalline silicon cell frame and crystalline silicon cells fixed by the crystalline silicon cell frame; the perovskite module in this embodiment includes a perovskite front glass, a perovskite back glass, and a perovskite cell sandwiched between the perovskite front glass and the perovskite back glass; the perovskite back glass is located on the side closest to the crystalline silicon cell frame.

[0097] The perovskite module includes two circular injection holes penetrating the perovskite module. The two injection holes are symmetrically arranged on the surface of the perovskite module, and the distance between them and the long side of the perovskite module is 30 mm, and the distance between them and the short side of the perovskite module is 32 mm.

[0098] The perovskite module has a long strip-shaped wiring portion on its surface away from the crystalline silicon cell module, with the long side parallel to the short side of the perovskite module. The wiring portion corresponds to the area of ​​the crystalline silicon cell frame.

[0099] The layered efficiency improvement method includes the following steps:

[0100] (1) Under the conditions of 25°C, 200 lux ambient light intensity and inverter stop starting, the crystalline silicon cell module is separated from the inverter. Then, the surface of the separated crystalline silicon cell module is dusted and cleaned to obtain a clean crystalline silicon cell surface and the upper surface of the crystalline silicon cell frame.

[0101] (2) A double-sided adhesive with a thickness of 0.8 mm is provided on the upper surface of the crystalline silicon cell frame. The edge of the double-sided adhesive is recessed by 1 mm relative to the upper surface edge of the crystalline silicon cell module. Then, the perovskite module is bonded to the double-sided adhesive. The edge of the perovskite module is recessed by 5 mm relative to the upper surface edge of the crystalline silicon cell module.

[0102] (3) Using Dow Corning PV6212 adhesive, mix its A and B components evenly in a 1:1 ratio for 4 minutes, and then inject it into the area enclosed by the perovskite module, crystalline silicon cell and crystalline silicon cell frame through the injection hole. The injection time is 20 minutes.

[0103] (4) Use transparent tape to fix the non-cell area of ​​the perovskite module to the frame area of ​​the crystalline silicon cell. After the adhesive has completely cured to form a glue layer, remove the transparent tape to obtain a four-terminal stacked module.

[0104] In summary, the efficiency of old crystalline silicon solar cell modules is only around 15%, which is significantly lower than the efficiency of current crystalline silicon solar cell modules (22% to 24%). Continuing to use old crystalline silicon solar cell modules is not cost-effective. Replacing old crystalline silicon solar cell modules entirely would result in the waste of components such as supports, cables, and inverters. To address this technical problem, the stacked efficiency improvement method provided by this invention can install perovskite modules on the basis of low-efficiency old crystalline silicon solar cells without scrapping long-life supports, cables, inverters, and other components. The perovskite modules can absorb most of the visible light spectrum of solar energy, while the old crystalline silicon solar cell modules absorb most of the infrared and near-infrared light, as well as a small amount of visible light. This achieves effective upgrading of old crystalline silicon photovoltaic modules under limited cost conditions.

[0105] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A method for upgrading and improving the efficiency of old crystalline silicon arrays through stacking, characterized in that, The layered efficiency improvement method includes the following steps: The crystalline silicon cell module is separated from the inverter, and then the surface of the separated crystalline silicon cell module is dusted and cleaned. The perovskite module is installed on the upper surface of the cleaned crystalline silicon cell module. Then, adhesive is injected between the crystalline silicon cell module and the perovskite module to fix the crystalline silicon cell module and the perovskite module in place, thereby realizing the stacked efficiency upgrade of the old crystalline silicon array.

2. The method for upgrading and improving efficiency through layering according to claim 1, characterized in that, The splitting was carried out at a temperature below 30°C; And / or, the ambient light intensity of the split is below 200 lux; And / or, the split is performed while the inverter is stopped from starting.

3. The method for upgrading and improving efficiency through layering according to claim 1, characterized in that, The edge of the perovskite module is recessed by 0 mm to 5 mm relative to the upper surface edge of the crystalline silicon cell module.

4. The method for upgrading and improving efficiency through layering according to any one of claims 1 to 3, characterized in that, The crystalline silicon cell assembly includes a crystalline silicon cell frame and crystalline silicon cells fixed by the crystalline silicon cell frame; The perovskite module includes a perovskite front glass, a perovskite back glass, and a perovskite cell sandwiched between the perovskite front glass and the perovskite back glass. The perovskite backplate glass is located on the side closest to the frame of the crystalline silicon cell.

5. The method for upgrading efficiency through layering according to claim 4, characterized in that, The perovskite assembly includes at least one injection hole penetrating the perovskite assembly.

6. The method for upgrading and improving efficiency through layering according to claim 5, characterized in that, The injection hole corresponds to the area of ​​the crystalline silicon cell frame; And / or, the distance between the injection hole and the long side of the perovskite module is 15mm to 30mm, and the distance between the injection hole and the short side of the perovskite module is 12mm to 32mm; And / or, the cross-sectional shape of the injection hole includes any one of circular, square or elliptical shapes.

7. The method for upgrading efficiency through layering according to claim 4, characterized in that, The perovskite module has a wiring portion on its surface away from the crystalline silicon cell module; The wiring section corresponds to the area of ​​the crystalline silicon cell frame.

8. The method for upgrading efficiency through layering according to claim 4, characterized in that, The step of mounting the perovskite module onto the upper surface of the cleaned crystalline silicon cell module includes: setting an adhesive portion with a thickness of 0.5 mm to 1 mm on the surface of the crystalline silicon cell frame near the perovskite module, and then bonding the perovskite module onto the upper surface of the cleaned crystalline silicon cell module.

9. The method for upgrading efficiency through layering according to claim 1, characterized in that, The light transmittance of the adhesive used for injection is above 88%; And / or, the viscosity of the adhesive used for injection is between 900 cps and 1500 cps.

10. The method for upgrading and improving efficiency through layering according to claim 1, characterized in that, The method of fixing the crystalline silicon cell module to the perovskite module includes: using transparent tape to fix the non-cell area of ​​the perovskite module to the frame area of ​​the crystalline silicon cell.

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