Display device, display module, and electronic apparatus

Abstract

Provided is a novel display device that is convenient, practical, or reliable. A display device including a first light emitting device, a second light emitting device, a first conductive layer, a first layer, and a second layer is used. The first light-emitting device includes a first electrode, a second electrode, and a first cell sandwiched between the first electrode and the second electrode, the first cell containing a light-emitting material. The second light-emitting device is adjacent to the first light-emitting device, the second light-emitting device includes a third electrode, a fourth electrode, and a second cell, the third electrode is adjacent to the first electrode, the third electrode is disposed so as to sandwich a first gap with the first electrode, the second cell is sandwiched between the third electrode and the fourth electrode, and the second cell includes a light-emitting material. The first conductive layer includes a second electrode and a fourth electrode, and the first conductive layer has a region overlapping the first gap. The first layer is sandwiched between the first conductive layer and the first gap, the first layer is in contact with a side surface of the first cell and a side surface of the second cell, and the first layer has insulating properties. The second layer is sandwiched between the first conductive layer and the first layer, the second layer is thicker than the first conductive layer, and the second layer is conductive.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, display module, electronic device, or semiconductor device.

[0002] Note that one aspect of the present invention is not limited to the aforementioned technical fields. The technical field of one aspect of the invention disclosed in this specification relates to an object, method, or manufacturing method. Furthermore, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, energy storage devices, storage devices, methods for driving these devices, or methods for manufacturing these devices. Background Technology

[0003] In recent years, there has been a demand for high-definition display panels. Devices requiring high-definition display panels include smartphones, tablets, and laptops. Additionally, fixed display devices such as televisions and monitors are also demanding higher resolutions. Among the devices with the greatest demand for high definition are those used in virtual reality (VR) or augmented reality (AR) applications.

[0004] In addition, typical examples of display devices that can be applied to display panels include liquid crystal displays, light-emitting devices including light-emitting elements such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs), and electronic paper that displays by electrophoresis or the like.

[0005] For example, the basic structure of an organic EL element is a structure in which a layer containing a luminescent organic compound is sandwiched between a pair of electrodes. By applying a voltage to the element, light emission from the luminescent organic compound can be obtained. Since display devices using the above-mentioned organic EL elements do not require a backlight source as needed for liquid crystal displays, thin, lightweight, high-contrast, and low-power display devices can be realized. For example, Patent Document 1 discloses an example of a display device using an organic EL element.

[0006] Patent document 2 discloses a display device for VR that uses organic EL devices.

[0007] [Preliminary Technology Documents]

[0008] [Patent Literature]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 2002-324673

[0010] [Patent Document 2] Booklet No. WO2018 / 087625 Summary of the Invention

[0011] The technical problem that the invention aims to solve

[0012] One objective of this invention is to provide a novel display device that is convenient, practical, or reliable. Another objective of this invention is to provide a novel display module that is convenient, practical, or reliable. Another objective of this invention is to provide a novel electronic device that is convenient, practical, or reliable. Finally, one objective of this invention is to provide a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device.

[0013] Note that the description of these objectives does not preclude the existence of other objectives. Also note that one embodiment of the invention does not necessarily require achieving all of the above objectives. Furthermore, objectives other than those described above can be identified and extracted from the description, drawings, claims, etc.

[0014] means of solving technical problems

[0015] (1) One aspect of the present invention is a display device, the display device comprising a first light-emitting device, a second light-emitting device, a first conductive layer, a first layer and a second layer.

[0016] The first light-emitting device includes a first electrode, a second electrode, and a first unit, wherein the first electrode and the second electrode overlap. The first unit is sandwiched between the first electrode and the second electrode, and the first unit contains a light-emitting material.

[0017] The second light-emitting device is adjacent to the first light-emitting device and includes a third electrode, a fourth electrode, and a second unit. The third electrode is adjacent to the first electrode and is arranged with a first gap between them, and the third electrode overlaps with the fourth electrode. The second unit is sandwiched between the third electrode and the fourth electrode and contains a light-emitting material.

[0018] The first conductive layer includes a second electrode and a fourth electrode, and the first conductive layer has a region that overlaps with the first gap.

[0019] The first layer is sandwiched between the first conductive layer and the first gap. The first layer is in contact with the side of the first unit and the side of the second unit. The first layer is insulating.

[0020] The second layer is sandwiched between the first conductive layer and the first conductive layer. The second layer is thicker than the first conductive layer and is conductive.

[0021] (2) In addition, one aspect of the present invention is the above-mentioned display device, wherein the first layer has a first opening and a second opening.

[0022] The first opening overlaps with the first electrode, and the first opening has a first side surface. The first side surface and the surface in contact with the substrate have an angle greater than 0° and less than 90°.

[0023] The second opening overlaps with the third electrode. The second opening has a second side surface, and the second side surface has an angle greater than 0° and less than 90° with the surface in contact with the substrate.

[0024] (3) In addition, one aspect of the present invention is the above-mentioned display device, wherein the second layer has a third opening and a fourth opening.

[0025] The third opening overlaps with the first opening, and the third opening is larger than the first opening. The fourth opening overlaps with the second opening and is larger than the second opening, as described in claim 2.

[0026] (4) In addition, one aspect of the present invention is the above-described display device, wherein the second layer has a third side surface at the third opening, and the third side surface has an angle greater than 0° and less than 90° with the surface in contact with the substrate.

[0027] The second layer has a fourth side surface at the fourth opening, and the fourth side surface has an angle greater than 0° and less than 90° with the surface in contact with the substrate.

[0028] This reduces the step formed in the first opening. Furthermore, it reduces the step formed in the second opening. Additionally, it reduces the step formed in the third opening. Furthermore, it reduces the step formed in the fourth opening. Furthermore, it suppresses the formation of cuts or cracks in the first conductive layer due to steps. Furthermore, a predetermined voltage can be supplied to the second and fourth electrodes. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0029] (5) In addition, one aspect of the present invention is the above-mentioned display device, which includes a third layer.

[0030] The third layer includes the fourth and fifth layers, and the third layer has an area that overlaps with the first gap.

[0031] The fourth layer is sandwiched between the second electrode and the first unit, and the fifth layer is sandwiched between the fourth electrode and the second unit.

[0032] The third layer is sandwiched between the first conductive layer and the second layer in the region overlapping the first gap, and the third layer contains a material with electron injection properties.

[0033] This allows for the suppression of the driving voltage of the display device. Furthermore, it enables electrical connection between the first conductive layer and the second layer. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0034] (6) In addition, one aspect of the present invention is a display device as described above, wherein the first light-emitting device includes a sixth layer.

[0035] The sixth layer is sandwiched between the first unit and the first electrode, and the sixth layer contains a material with hole injection properties.

[0036] The second light-emitting device includes a seventh layer. The seventh layer is sandwiched between the second unit and the third electrode, and is configured such that a second gap is sandwiched between the seventh layer and the sixth layer, the second gap overlapping the first gap. The seventh layer contains a material with hole injection properties.

[0037] Therefore, the driving voltage of the display device can be suppressed. Furthermore, the current flowing between the sixth and seventh layers can be suppressed. Additionally, the phenomenon of unintentional emission of the adjacent second light-emitting device accompanying the operation of the first light-emitting device can be suppressed. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0038] (7) In addition, one aspect of the present invention is the above-mentioned display device, which includes a display area and a second conductive layer.

[0039] The display area includes a first light-emitting device and a second light-emitting device. The first layer has a fifth opening, which is located on the outside of the display area.

[0040] A second layer is sandwiched between the second conductive layer and the first conductive layer, and a first layer is sandwiched between the second conductive layer and the second conductive layer. The second conductive layer has a region that overlaps with the fifth opening, and the second conductive layer is electrically connected to the first conductive layer.

[0041] Therefore, a predetermined voltage can be supplied to the first and second light-emitting devices from the outside of the display area. Furthermore, voltage drops supplied to the first light-emitting device due to the distance between the first light-emitting device and the second conductive layer can be suppressed. Similarly, voltage drops supplied to the second light-emitting device due to the distance between the second light-emitting device and the second conductive layer can be suppressed. Additionally, display unevenness can be suppressed. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0042] (8) In addition, one aspect of the present invention is a display module that includes the above-described display device and at least one of a connector and an integrated circuit.

[0043] (9) In addition, one aspect of the present invention is an electronic device comprising: the above-described display device; and at least one of a battery, a camera, a speaker and a microphone.

[0044] In the accompanying drawings of this specification, the constituent elements are shown as independent blocks according to their functions. However, in reality, it is difficult to completely divide the constituent elements according to their functions, and a constituent element may involve multiple functions.

[0045] In this specification, a light-emitting device includes an image display device that uses a light-emitting element. Additionally, a light-emitting device sometimes includes modules such as: modules in which the light-emitting element is mounted with connectors such as anisotropic conductive films or TCP (Tape Carrier Package); modules in which printed circuit boards are provided at the ends of the TCP; or modules in which an IC (integrated circuit) is directly mounted on the light-emitting element via COG (Chip On Glass) packaging. Furthermore, lighting devices and the like sometimes include light-emitting devices.

[0046] Invention Effects

[0047] According to one aspect of the present invention, a novel display device with good convenience, practicality, or reliability can be provided. Additionally, according to one aspect of the present invention, a novel display module with good convenience, practicality, or reliability can be provided. Furthermore, according to one aspect of the present invention, a novel electronic device with good convenience, practicality, or reliability can be provided. Additionally, a novel display device can be provided. Additionally, a novel display module can be provided. Additionally, a novel electronic device can be provided.

[0048] Note that the description of these effects does not preclude the existence of other effects. Furthermore, one embodiment of the invention does not necessarily require all of the aforementioned effects. Note that effects other than those described above can be understood and extracted from the specification, drawings, claims, etc. Brief description of the attached figures

[0049] Figures 1A to 1C This is a diagram illustrating the structure of a display device according to an embodiment.

[0050] Figure 2A and Figure 2B This is a diagram illustrating the structure of a display device according to an embodiment.

[0051] Figure 3A and Figure 3BThis is a diagram illustrating the structure of a display device according to an embodiment.

[0052] Figure 4 This is a diagram illustrating the structure of a display device according to an embodiment.

[0053] Figure 5A and Figure 5B This is a diagram illustrating the structure of a display device according to an embodiment.

[0054] Figure 6A and Figure 6B This is a diagram illustrating the structure of a display device according to an embodiment.

[0055] Figure 7A and Figure 7B This is a diagram illustrating the structure of a display device according to an embodiment.

[0056] Figure 8A and Figure 8B This is a diagram illustrating the structure of a display device according to an embodiment.

[0057] Figure 9 This is a diagram illustrating the structure of a display device according to an embodiment.

[0058] Figure 10 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0059] Figure 11 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0060] Figure 12 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0061] Figure 13 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0062] Figure 14 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0063] Figure 15 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0064] Figure 16 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0065] Figure 17 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0066] Figure 18 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0067] Figure 19 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0068] Figure 20 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0069] Figure 21 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0070] Figure 22 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0071] Figure 23 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0072] Figure 24 This is a diagram illustrating a method for manufacturing a display device according to an embodiment.

[0073] Figure 25 This is a diagram illustrating the structure of the light-emitting device according to an embodiment.

[0074] Figure 26A and Figure 26B This is a diagram illustrating the structure of the light-emitting device according to an embodiment.

[0075] Figures 27A to 27C This is a diagram illustrating the structure of a display device according to an embodiment.

[0076] Figure 28 This is a diagram illustrating the structure of a display device according to an embodiment.

[0077] Figure 29 This is a diagram illustrating the structure of the display module according to the implementation method.

[0078] Figure 30A and Figure 30B This is a diagram illustrating the structure of a display device according to an embodiment.

[0079] Figure 31 This is a diagram illustrating the structure of a display device according to an embodiment.

[0080] Figure 32 This is a diagram illustrating the structure of a display device according to an embodiment.

[0081] Figure 33 This is a diagram illustrating the structure of a display device according to an embodiment.

[0082] Figure 34 This is a diagram illustrating the structure of a display device according to an embodiment.

[0083] Figure 35 This is a diagram illustrating the structure of a display device according to an embodiment.

[0084] Figure 36 This is a diagram illustrating the structure of a display device according to an embodiment.

[0085] Figure 37 This is a diagram illustrating the structure of the display module according to the implementation method.

[0086] Figures 38A to 38C This is a diagram illustrating the structure of a display device according to an embodiment.

[0087] Figure 39 This is a diagram illustrating the structure of a display device according to an embodiment.

[0088] Figure 40 This is a diagram illustrating the structure of a display device according to an embodiment.

[0089] Figure 41 This is a diagram illustrating the structure of a display device according to an embodiment.

[0090] Figure 42 This is a diagram illustrating the structure of a display device according to an embodiment.

[0091] Figure 43 This is a diagram illustrating the structure of a display device according to an embodiment.

[0092] Figures 44A to 44D This is a diagram illustrating an example of an electronic device according to an embodiment.

[0093] Figures 45A to 45F This is a diagram illustrating an example of an electronic device according to an embodiment.

[0094] Figures 46A to 46G This is a diagram illustrating an example of an electronic device according to an embodiment.

[0095] Figure 47 This is a diagram illustrating the structure of the light-emitting device according to an embodiment.

[0096] Figure 48 These are scanning transmission electron microscope images illustrating the cross-sectional structure of the light-emitting device according to an embodiment.

[0097] Figure 49A and Figure 49B These are optical microscope photographs illustrating the luminescence state of the light-emitting device according to the embodiments.

[0098] Figure 50A and Figure 50B These are optical microscope photographs illustrating the luminescence state of the comparative device according to the embodiments.

[0099] Methods of implementing the invention

[0100] One aspect of the display device of the present invention includes a first light-emitting device, a second light-emitting device, a first conductive layer, a first layer, and a second layer. The first light-emitting device includes a first electrode, a second electrode, and a first unit. The first electrode overlaps with the second electrode, and the first unit is sandwiched between the first and second electrodes. The first unit contains a luminescent material. The second light-emitting device is adjacent to the first light-emitting device and includes a third electrode, a fourth electrode, and a second unit. The third electrode is adjacent to the first electrode and is arranged with a first gap between it and the first electrode. The third electrode overlaps with the fourth electrode, and the second unit is sandwiched between the third and fourth electrodes. The second unit contains a luminescent material. The first conductive layer includes the second electrode and the fourth electrode and has a region overlapping the first gap. The first layer is sandwiched between the first conductive layer and the first gap, and the first layer is in contact with the side surfaces of the first unit and the second unit. The first layer is insulating. The second layer is sandwiched between the first conductive layer and the first layer, and the second layer is thicker than the first conductive layer. The second layer is conductive.

[0101] This reduces the step formed in the first opening. Furthermore, it reduces the step formed in the second opening. Additionally, it reduces the step formed in the third opening. Furthermore, it reduces the step formed in the fourth opening. Furthermore, it suppresses the formation of cuts or cracks in the first conductive layer due to steps. Furthermore, a predetermined voltage can be supplied to the second and fourth electrodes. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0102] The embodiments will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily understand that its methods and details can be varied in many ways without departing from the spirit and scope of the invention. Therefore, the present invention should not be construed as being limited only to the contents described in the embodiments shown below. Note that in the inventive structures described below, the same reference numerals are used in different drawings to denote the same parts or parts having the same function, and repeated descriptions are omitted. (Implementation Method 1)

[0103] In this embodiment, a display device according to one aspect of the present invention will be described with reference to FIGS. 1 to 8.

[0104] Figure 1A This is a perspective view illustrating the structure of a display device according to one aspect of the present invention. Figure 1B yes Figure 1A Front view, Figure 1C This is an explanation Figure 1AA partial front view.

[0105] Figure 2A It is along Figure 1C The cross-sectional view of the cut-off line PQ shown is as follows. Figure 2B It is an explanation and Figure 2A Cross-sectional views of different structures.

[0106] Figure 3A This is a cross-sectional view illustrating the structure of a display device according to one aspect of the present invention. Figure 3B This is an explanation Figure 3A A partial cross-sectional view.

[0107] Figure 4 It is an explanation and Figure 3A Cross-sectional views of different structures.

[0108] Figure 5A It is along Figure 1B The cross-sectional view of the cut-off line P2-Q2 shown is shown. Figure 5B This is an explanation Figure 5A A partial cross-sectional view.

[0109] Figure 6A This is an explanation Figure 3A A partial cross-sectional view, Figure 6B This is an explanation Figure 6A A partial cross-sectional view.

[0110] Figure 7A It is an explanation and Figure 3A Cross-sectional views of different structures, Figure 7B This is an explanation Figure 7A A partial cross-sectional view.

[0111] Figure 8A It is an explanation and Figure 3A Cross-sectional views of different structures, Figure 8B This is an explanation Figure 8A A partial cross-sectional view.

[0112] <Example 1 of the structure of a display device>

[0113] The display device 700 described in this embodiment includes a set of pixels 703 (see reference 703). Figure 1A Additionally, the display device 700 includes a substrate 510, a functional layer 520, and an insulating layer 573.

[0114] A group of pixels 703 includes pixels 702A, 702B, and 702C (see reference). Figure 1C ).

[0115] Pixel 702A includes a light-emitting device 550A and a pixel circuit 530A, with the light-emitting device 550A and the pixel circuit 530A electrically connected (see reference). Figure 2Aand Figure 2B ).

[0116] Pixel 702B includes a light-emitting device 550B and a pixel circuit 530B, with the light-emitting device 550B and the pixel circuit 530B being electrically connected.

[0117] Pixel 702C includes a light-emitting device 550C and a pixel circuit 530C, with the light-emitting device 550C and the pixel circuit 530C being electrically connected.

[0118] The functional layer 520 includes pixel circuits 530A, 530B, and 530C. Pixel circuit 530A is sandwiched between light-emitting device 550A and substrate 510, pixel circuit 530B is sandwiched between light-emitting device 550B and substrate 510, and pixel circuit 530C is sandwiched between light-emitting device 550C and substrate 510.

[0119] Additionally, functional layer 520 includes layer 521. Layer 521 is sandwiched between light-emitting device 550A and pixel circuit 530A and has insulating properties. Layer 521 has an overlapping region that overlaps with insulating layer 573, and the overlapping region has display area 731 (see reference). Figure 1A Note that a light-emitting device 550A is sandwiched between layer 521 and insulating layer 573.

[0120] In one embodiment of the present invention, the display device 700 emits light ELA in a direction in which pixel circuit 530A is not configured, light-emitting device 550B emits light ELB in a direction in which pixel circuit 530B is not configured, and light-emitting device 550C emits light ELC in a direction in which pixel circuit 530C is not configured (see reference). Figure 2A In other words, one embodiment of the display device 700 of the present invention is a top-emitting display device.

[0121] In addition, in one embodiment of the present invention, the light-emitting device 550A of the display device 700 emits light ELA in the direction in which the pixel circuit 530A is disposed, the light-emitting device 550B emits light ELB in the direction in which the pixel circuit 530B is disposed, and the light-emitting device 550C emits light ELC in the direction in which the pixel circuit 530C is disposed (see reference). Figure 2B In other words, one embodiment of the display device 700 of the present invention is a bottom-emitting display device.

[0122] <Example 2 of display device structure>

[0123] The display device 700 described in this embodiment includes a light-emitting device 550A, a light-emitting device 550B, a conductive layer 552, a layer 529, and a layer 553 (see reference). Figure 3A Additionally, the display device 700 includes a light-emitting device 550C.

[0124] <<Structure Example 1 of Light Emitting Device 550A>>

[0125] The light-emitting device 550A includes electrodes 551A, 552A, and unit 103A. Additionally, the light-emitting device 550A includes a layer of REFA.

[0126] Electrode 551A overlaps with electrode 552A, and unit 103A is sandwiched between electrode 551A and electrode 552A. Unit 103A contains a luminescent material EMA. For example, fluorescent luminescent materials, phosphorescent luminescent materials, or materials exhibiting thermally activated delayed fluorescence can be used as the luminescent material EMA. Note that a detailed structure that can be used for unit 103A is described in Embodiment 3.

[0127] In addition, the light-emitting device 550A includes layer 104A and layer 105A.

[0128] Layer 104A is sandwiched between cell 103A and electrode 551A, and layer 104A contains a material with hole injection capability. For example, layer 104A has a 1×10⁻⁶ Ω·cm² in the film state. 4 Ω･cm or more and 1×10 7 The resistivity is below Ω·cm. Furthermore, a composite material containing a hole-transporting material and an electron-receiving material, or an electron-receiving material, can be used for layer 104A. Note that detailed structures applicable to electrode 551A and layer 104A are described in Embodiment 4.

[0129] The layer REFA reflects light toward electrode 552A. For example, metals or alloys can be used for the layer REFA. Specifically, films containing silver (Ag) or aluminum (Al) can be used as a single layer or in a stack as the layer REFA.

[0130] <<Structural Example 1 of Light-Emitting Device 550B>>

[0131] Light-emitting device 550B is adjacent to light-emitting device 550A. Light-emitting device 550B includes electrode 551B, electrode 552B, and unit 103B (see reference). Figure 3A Additionally, the light-emitting device 550B includes a layer REFB. For example, materials suitable for the layer REFA can be used in the layer REFB.

[0132] Electrode 551B is adjacent to electrode 551A, and electrode 551B is configured such that a gap 551AB is sandwiched between electrode 551A and electrode 551B. In other words, gap 551AB is sandwiched between electrode 551A and electrode 551B.

[0133] Electrode 551B overlaps with electrode 552B, and unit 103B is sandwiched between electrode 551B and electrode 552B. Unit 103B contains luminescent material EMB. For example, a material that can be used as luminescent material EMA can be used as luminescent material EMB.

[0134] In addition, the light-emitting device 550B includes layer 104B and layer 105B.

[0135] Layer 104B is sandwiched between cell 103B and electrode 551B, and layer 104B is configured such that a gap 104AB is sandwiched between layer 104B and layer 104A. In other words, gap 104AB is sandwiched between layer 104A and layer 104B.

[0136] Layer 104B contains a material with hole-injection properties. For example, a material that can be used in layer 104A can be used in layer 104B.

[0137] Therefore, the driving voltage of the display device can be suppressed. Furthermore, the current flowing between layer 104A and layer 104B can be suppressed. In addition, the phenomenon of unintentional light emission of the adjacent light-emitting device 550B accompanying the operation of the light-emitting device 550A can be suppressed. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0138] <<Structural Example 1 of Light-Emitting Device 550C>>

[0139] The light-emitting device 550C includes electrode 551C, electrode 552C, unit 103C, layer 104C, and layer 105 (see reference). Figure 3A In addition, the light-emitting device 550C includes a layer REFC.

[0140] Unit 103C is sandwiched between electrodes 551C and 552C, and unit 103C contains a luminescent material EMC. For example, a material that can be used as a luminescent material EMA can be used as the luminescent material EMC.

[0141] Layer 104C is sandwiched between unit 103C and electrode 551C, and layer 105C is sandwiched between electrode 552C and unit 103C.

[0142] <<Structural Example of Conductive Layer 552>>

[0143] The conductive layer 552 includes electrodes 552A and 552B, and has a region overlapping with the gap 551AB. Furthermore, the conductive layer 552 includes electrode 552C.

[0144] For example, a conductive material can be used for the conductive layer 552. Specifically, a material comprising a metal, alloy, or conductive compound can be used in the conductive layer 552 in a single layer or in a stack. Note that a detailed structure that can be used for the conductive layer 552 is described in Embodiment 5.

[0145] <<Example 1 of the structure of layer 529>>

[0146] Layer 529 is sandwiched between conductive layer 552 and gap 551AB, and layer 529 is in contact with the side of unit 103A and the side of unit 103B.

[0147] Layer 529 has insulating properties. For example, inorganic or organic materials can be used in layer 529 as a single layer or in a multilayer. Alternatively, a composite material containing both inorganic and organic materials can be used in layer 529.

[0148] Specifically, a film containing silicon, nitrogen, or oxygen can be used for layer 529. Alternatively, a film containing aluminum and oxygen can be used for layer 529. For example, a film containing silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, or aluminum nitride can be used for layer 529. This suppresses the diffusion of impurities that degrade the operating characteristics of the light-emitting device from the outside of the device to the inside.

[0149] For example, layer 529 can be formed using methods such as plasma-enhanced chemical vapor deposition (PECVD), sputtering, and plasma-enhanced atomic layer deposition (PEALD). This allows for the use of a porous film with excellent coverage in layer 529. In particular, films formed using the PEALD method exhibit higher coverage than those formed using the PECVD method.

[0150] Furthermore, layer 529 can be formed using a coating method. For example, layer 529 can be formed by coating a liquid containing silazane using a spin coater. Specifically, a film containing silicon oxide can be formed. Note that by appropriately selecting the solvent, layer 529 can be formed without degrading the operating characteristics of light-emitting device 550A, light-emitting device 550B, or light-emitting device 550C.

[0151] Furthermore, layer 529 is preferably formed using a method that uses a lower temperature. Specifically, layer 529 is formed at a temperature of 150°C or below, preferably 120°C or below, and more preferably 100°C or below. As a result, layer 529 can be formed without reducing the operating characteristics of light-emitting device 550A, light-emitting device 550B, or light-emitting device 550C.

[0152] <<Example 1 of the structure of layer 553>>

[0153] Layer 553 is sandwiched between conductive layer 552 and layer 529, and layer 553 is thicker than conductive layer 552.

[0154] Layer 553 is conductive. For example, a metal film, alloy film, or conductive compound film with a thin-film resistivity of 1kΩ / □ or less in the film state can be used as a single layer or in a stack as layer 553. Specifically, copper (Cu), aluminum (Al), or conductive oxides can be used as layer 553. Note that dark-colored materials can be used as layer 553. For example, blackened copper can be used as layer 553. Thus, layer 553 can be used as a black matrix. In addition, the contrast of the display device can be improved.

[0155] For example, layer 553 can be formed using sputtering, vapor deposition, metal CVD, PECVD, etc. In particular, when using sputtering, metal CVD, and PECVD, a dense film can be used for layer 553.

[0156] A film that electrically connects the electrodes of adjacent light-emitting devices can be used in layer 553, such as electrodes 552A and 552B. In other words, even a film with cuts or cracks can be used in layer 553. Of course, a film with good step coverage can be appropriately used in layer 553. For example, a conductive oxide formed using the PEALD method can be appropriately used in layer 553. Specifically, indium zinc oxide (InZO) formed using the PEALD method can be appropriately used in layer 553.

[0157] <<Structure Example 2 of Layer 529>>

[0158] Layer 529 has openings 529A, 529B and 529C (see reference) Figure 3B The opening 529A overlaps with the electrode 551A, and the opening 529A has a side surface 529AS (see reference). Figure 6A and Figure 6B Furthermore, the side surface 529AS has an angle θ1 greater than 0° and less than 90° with the surface in contact with the substrate. This suppresses the formation of cuts or cracks in the conductive layer 552 due to steps.

[0159] The opening 529B overlaps with the electrode 551B, and the opening 529B has a side surface 529BS. Furthermore, the side surface 529BS has an angle greater than 0° and less than 90° with the surface in contact with the substrate. This suppresses the formation of cuts or cracks in the conductive layer 552 due to steps.

[0160] <<Example 2 of the structure of layer 553>>

[0161] Layer 553 has openings 553A, 553B and 553C (see reference) Figure 3B Opening 553A overlaps with opening 529A, and opening 553A is larger than opening 529A. Additionally, opening 553B overlaps with opening 529B, and opening 553B is larger than opening 529B.

[0162] <<Example 3 of the structure of layer 553>>

[0163] Layer 553 has a side surface 553AS at the opening 553A (see reference). Figure 6A and Figure 6B Furthermore, the side surface 553AS has an angle θ2 greater than 0° and less than 90° with the surface in contact with the substrate. This suppresses the formation of cuts or cracks in the conductive layer 552 due to steps. Additionally, it increases the overlap area between the conductive layer 552 and the side surface 553AS.

[0164] Furthermore, layer 553 has a side surface 553BS at the opening 553B, and the side surface 553BS has an angle greater than 0° and less than 90° with the surface in contact with the substrate. This suppresses the formation of cuts or cracks in the conductive layer 552 due to steps. Additionally, it increases the overlap area between the conductive layer 552 and the side surface 553BS.

[0165] This reduces the step formed in opening 529A. Additionally, it reduces the step formed in opening 529B. Furthermore, it reduces the step formed in opening 553A. Furthermore, it reduces the step formed in opening 553B. Additionally, it suppresses the formation of cuts or cracks in the conductive layer 552 due to steps. Furthermore, a predetermined voltage can be supplied to electrodes 552A and 552B. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0166] <Example 3 of a display device structure>

[0167] The display device 700 described in this embodiment includes layer 105. Furthermore, the display device 700 includes layers SCRA1, SCRA2, SCRB1, SCRB2, SCRC1, and SCRC2.

[0168] <<Structure Example of Layer 105>>

[0169] Layer 105 includes layers 105A and 105B, and layer 105 has a region that overlaps with gap 551AB. In addition, layer 105 includes layer 105C.

[0170] Layer 105A is sandwiched between electrode 552A and cell 103A. In addition, layer 105B is sandwiched between electrode 552B and cell 103B.

[0171] Layer 105 is sandwiched between conductive layers 552 and 553 in the region that overlaps with gap 551AB.

[0172] Materials that facilitate the injection of charge carriers from electrodes 552A, 552B, and 552C can be used in layer 105. For example, layer 105 may contain a material with electron injection properties. Note that a detailed structure that can be used in layer 105 is described in Embodiment 5.

[0173] This allows for the suppression of the driving voltage of the display device. Furthermore, conductive layer 552 can be electrically connected to layer 553. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0174] <<Structure Examples of Layer SCRA1, Layer SCRB1, and Layer SCRC1>>

[0175] Layer SCRA1 is sandwiched between layer 529 and cell 103A, and layer SCRA1 has an opening that overlaps with opening 529A. Layer SCRB1 is sandwiched between layer 529 and cell 103B, and layer SCRB1 has an opening that overlaps with opening 529B. Layer SCRC1 is sandwiched between layer 529 and cell 103C, and layer SCRC1 has an opening that overlaps with opening 529A.

[0176] For example, a film containing metal, metal oxide or inorganic insulating material can be used as layer SCRA1, layer SCRB1 or layer SCRC1.

[0177] In this specification, devices manufactured using a metal mask or FMM (Fine Metal Mask) are sometimes referred to as devices with an MM (Metal Mask) structure. Additionally, devices manufactured without a metal mask or FMM are sometimes referred to as devices with an MML (Metal Mask Less) structure.

[0178] <<Structure Examples of Layer SCRA2, Layer SCRB2, and Layer SCRC2>>

[0179] Layer SCRA2 is sandwiched between layer SCRA1 and cell 103A, and layer SCRA2 has an opening that overlaps with opening 529A. Layer SCRB2 is sandwiched between layer SCRB1 and cell 103B, and layer SCRB2 has an opening that overlaps with opening 529B. Layer SCRC2 is sandwiched between layer SCRC1 and cell 103C, and layer SCRC2 has an opening that overlaps with opening 529A.

[0180] For example, organic materials, metals, metal oxides, or inorganic insulating materials can be used in single layers or in stacks for layer SCRA2, layer SCRB2, or layer SCRC2.

[0181] <Example 4 of a display device structure>

[0182] The display device 700 described in this embodiment includes a light-emitting device 550A, a light-emitting device 550B, a conductive layer 552, a layer 529, and a layer 553 (see reference). Figure 4 Additionally, the display device 700 includes a light-emitting device 550C. Note that... Figure 4 The structure of the display device shown is similar to Figure 3A The difference between the display devices shown lies in the structure of the light-emitting devices.

[0183] <<Structural Example 2 of Light Emitting Device 550A>>

[0184] The light-emitting device 550A includes electrode 551A, electrode 552A, unit 103A, unit 103A2, and intermediate layer 106A (see reference). Figure 4 Note that the light-emitting device 550A is different from the reference. Figure 3A The difference between the described light-emitting device 550A and the former is that the former includes unit 103A2 and intermediate layer 106A. The differences will be described in detail here, while the description of the parts with the same structure will refer to the above description.

[0185] In other words, the light-emitting device 550A includes multiple stacked units between electrodes 551A and 552A. Furthermore, the number of stacked units is not limited to two; it can also be three or more. Sometimes, the structure including multiple stacked units sandwiched between electrodes 551A and 552A, and an intermediate layer 106A sandwiched between these units, is referred to as a stacked light-emitting device or a series-type light-emitting device.

[0186] Unit 103A2 is sandwiched between unit 103A and electrode 552A, and unit 103A2 contains luminescent material EMA2. Structures usable in unit 103A can be used in unit 103A2.

[0187] Intermediate layer 106A is sandwiched between unit 103A2 and unit 103A. Note that a detailed structure for intermediate layer 106A is described in embodiment 6.

[0188] <<Structural Example 2 of Light-Emitting Device 550B>>

[0189] In addition, the light-emitting device 550B includes electrode 551B, electrode 552B, unit 103B, unit 103B2, and intermediate layer 106B (see reference). Figure 4 Note that the light-emitting device 550B is different from the reference. Figure 3A The difference between the light-emitting device 550B and the one described is that the former includes unit 103B2 and intermediate layer 106B.

[0190] Unit 103B2 is sandwiched between unit 103B and electrode 552B, and unit 103B2 contains luminescent material EMB2. Structures applicable to unit 103A can be used in unit 103B2.

[0191] Intermediate layer 106B is configured with a gap between it and intermediate layer 106A, and is sandwiched between unit 103B2 and unit 103B. Alternatively, the structure that can be used for intermediate layer 106A can be used for intermediate layer 106B.

[0192] <<Structural Example 2 of Light-Emitting Device 550C>>

[0193] The light-emitting device 550C includes electrode 551C, electrode 552C, unit 103C, unit 103C2, and intermediate layer 106C (see reference). Figure 4 Note that the light-emitting device 550C is different from the reference. Figure 3A The difference between the light-emitting device 550C and the one described is that the former includes unit 103C2 and intermediate layer 106C.

[0194] <Example 5 of a display device structure>

[0195] The display device 700 described in this embodiment includes a display area 731 and a conductive layer VCOM2 (see reference). Figure 1A and Figure 1B ).

[0196] Display area 731 includes a group of pixels 703, which includes pixels 702A and 702B (see reference). Figure 1C A group of pixels 703 includes light-emitting devices 550A and 550B (see reference). Figure 2A and Figure 2B ).

[0197] Layer 529 has an opening 529CON, which is located outside the display area 731 (see reference). Figure 5A and Figure 5B ).Notice, Figure 5B Only show Figure 5A The substrate 510, functional layer 520, layer 529 and layer 553 are included.

[0198] A layer 553 is sandwiched between conductive layer VCOM2 and conductive layer 552, and a layer 529 is sandwiched between conductive layer VCOM2 and layer 553 (see reference). Figure 5A In other words, layer 553 is sandwiched between conductive layer 552 and conductive layer VCOM2, and layer 529 is sandwiched between layer 553 and conductive layer VCOM2.

[0199] Furthermore, the conductive layer VCOM2 has a region overlapping with the opening 529CON, and the conductive layer VCOM2 is electrically connected to the conductive layer 552. In other words, the conductive layer VCOM2 is electrically connected to the conductive layer 552 through layer 553.

[0200] Therefore, a predetermined voltage can be supplied from the outside of the display area 731 to the light-emitting devices 550A and 550B. Furthermore, the voltage drop supplied to the light-emitting device 550A due to the distance between it and the conductive layer VCOM2 can be suppressed. Similarly, the voltage drop supplied to the light-emitting device 550B due to the distance between it and the conductive layer VCOM2 can be suppressed. Additionally, display unevenness can be suppressed. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0201] <Example 6 of a display device structure>

[0202] The display device 700 described in this embodiment includes layer 528 (see reference 528). Figure 7A and Figure 7B ).

[0203] Layer 528 has openings 528A, 528B, and 528C. Opening 528A overlaps with electrode 551A, and opening 528B overlaps with electrode 551B. Additionally, layer 528 is insulating. For example, inorganic or organic materials can be used in layer 528 as a single layer or in a stack. Alternatively, a composite material containing both inorganic and organic materials can be used in layer 528.

[0204] Specifically, a film containing silicon, nitrogen, or oxygen can be used for layer 528. Alternatively, a film containing aluminum and oxygen can be used for layer 528. Furthermore, a film containing polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, or benzocyclobutene resin can be used for layer 528. Note that, for example, a solvent-soluble thermoplastic polyimide resin can be used as the aforementioned polyimide resin. Solvent-soluble thermoplastic polyimide resins have high affinity for the processes of other layers (e.g., layer 529, etc.), and are therefore preferred.

[0205] This suppresses the phenomenon of electric field concentration between the ends of electrodes 552A and 551A, between the ends of electrodes 552B and 551B, or between the ends of electrodes 552C and 551C. Furthermore, it suppresses abnormal light emission at the outer periphery of electrodes 551A, 551B, or 551C. Additionally, it suppresses current leakage to the conductive layer 552 at the outer periphery of electrodes 551A, 551B, or 551C.

[0206] <Example 7 of a display device structure>

[0207] The display device 700 described in this embodiment includes layer 528 (see reference 528). Figure 8A and Figure 8B Note that layer 528 has a shape that contacts the sides of electrodes 551A, 551C, and 551C, which is consistent with the reference. Figure 7A and Figure 7B The display device described is different. In other words, layer 528 constitutes the sidewall of electrodes 551A, 551C and 551A.

[0208] In addition, layer 528 has insulating properties. For example, inorganic or organic materials can be used in layer 528 as a single layer or in a stack. Alternatively, a composite material containing both inorganic and organic materials can be used in layer 528.

[0209] Specifically, a film containing silicon, nitrogen, or oxygen can be used for layer 528. Alternatively, a film containing aluminum and oxygen can be used for layer 528.

[0210] This protects the sides of electrodes 551A, 551B, and 551C from damage during the manufacturing process. Furthermore, it increases the aperture ratio of light-emitting devices A, B, and C.

[0211] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0212] (Implementation Method 2)

[0213] In this embodiment, refer to Figures 9 to 24The present invention describes the structure and manufacturing method of a display device according to one aspect of the present invention.

[0214] Figure 9 This is a cross-sectional view illustrating the structure of a display device according to one aspect of the present invention.

[0215] Figures 10 to 24 This is a cross-sectional view illustrating a method for manufacturing a display device according to one aspect of the present invention.

[0216] <Structure example of display device 700>

[0217] The display device 700 described in this embodiment includes light-emitting devices 550A, 550B, and 550C, layer 105, conductive layer 552, layer 529, and layer 553 (see reference). Figure 9 ).

[0218] In addition, the display device 700 includes layers SCRA1, SCRA2, SCRB1, SCRB2, SCRC1, and SCRC2.

[0219] In addition, the display device 700 includes a substrate 510, a functional layer 520, and a layer 528.

[0220] <<Structural Example of Light Emitting Device 550A>>

[0221] The light-emitting device 550A includes electrode 551A, electrode 552A, unit 103A, unit 103A2, and intermediate layer 106A. Furthermore, the light-emitting device 550A includes layer 104A, layer 105A, and layer REFA.

[0222] <<Structural Example of Light-Emitting Device 550B>>

[0223] Light-emitting device 550B is adjacent to light-emitting device 550A. Furthermore, light-emitting device 550B includes electrode 551B, electrode 552B, unit 103B, unit 103B2, and intermediate layer 106B. Additionally, light-emitting device 550B includes layer 104B, layer 105B, and layer REFB.

[0224] Electrode 551B is adjacent to electrode 551A, and electrode 551B is configured such that a gap 551AB is sandwiched between electrode 551A and electrode 551B. In other words, gap 551AB is located between electrode 551A and electrode 551B.

[0225] Intermediate layer 106B is configured such that a gap 106AB is sandwiched between it and intermediate layer 106A. In other words, gap 106AB is located between intermediate layer 106A and intermediate layer 106B.

[0226] <<Structural Example of Light-Emitting Device 550C>>

[0227] The light-emitting device 550C includes electrode 551C, electrode 552C, unit 103C, unit 103C2, and intermediate layer 106C. In addition, the light-emitting device 550C includes layer 104C, layer 105C, and layer REFC.

[0228] <<Structure Example of Layer 105>>

[0229] Layer 105 includes layers 105A, 105B and 105C.

[0230] <<Structural Example of Conductive Layer 552>>

[0231] The conductive layer 552 includes electrodes 552A, 552B and 552C.

[0232] <<Structure Example of Layer 529>>

[0233] Layer 529 is sandwiched between conductive layer 552 and unit 103A2, layer 529 is sandwiched between conductive layer 552 and unit 103B2, and layer 529 is sandwiched between conductive layer 552 and unit 103C2.

[0234] Layer 529 has an opening that overlaps with electrode 551A, an opening that overlaps with electrode 551B, and an opening that overlaps with electrode 551C.

[0235] Layer 529 is in contact with the side of unit 103A, the side of intermediate layer 106A and the side of unit 103A2; layer 529 is in contact with the side of unit 103B, the side of intermediate layer 106B and the side of unit 103B2; layer 529 is in contact with the side of unit 103C, the side of intermediate layer 106C and the side of unit 103C2.

[0236] <<Example of a Layer 553 Structure>>

[0237] Layer 553 is sandwiched between conductive layer 552 and layer 529. Layer 553 is in contact with conductive layer 552.

[0238] <<Structure Examples of Layer SCRA1, Layer SCRB1, and Layer SCRC1>>

[0239] Layer SCRA1 is sandwiched between layer 529 and cell 103A2, layer SCRB1 is sandwiched between layer 529 and cell 103B2, and layer SCRC1 is sandwiched between layer 529 and cell 103C2.

[0240] <<Structure Examples of Layer SCRA2, Layer SCRB2, and Layer SCRC2>>

[0241] Layer SCRA2 is sandwiched between layer SCRA1 and cell 103A2, layer SCRB2 is sandwiched between layer SCRB1 and cell 103B2, and layer SCRC2 is sandwiched between layer SCRC1 and cell 103C2.

[0242] <<Structural Example of Functional Layer 520>>

[0243] Functional layer 520 is sandwiched between light-emitting device 550A and substrate 510, functional layer 520 is sandwiched between light-emitting device 550B and substrate 510, and functional layer 520 is sandwiched between light-emitting device 550C and substrate 510.

[0244] Additionally, the functional layer 520 includes layer 521, on which light-emitting devices 550A, 550B, and 550C are formed. Furthermore, layer 521 is insulating.

[0245] <<Example of a Layer 528 Structure>>

[0246] Layer 528 is sandwiched between layer 529 and the side of electrode 551A, layer 528 is sandwiched between layer 529 and the side of electrode 551B, and layer 528 is sandwiched between layer 529 and the side of electrode 551C. Furthermore, layer 528 is in contact with the side of electrode 551A, the side of electrode 551B, and the side of electrode 551C.

[0247] <Example of manufacturing method for display device 700>

[0248] The method for manufacturing the display device described in this embodiment includes the following steps.

[0249] Steps 1 to 3-2 are the steps for forming layers REFA, REFB, REFC, electrodes 551A, 551B, 551C, and layer 528 (see reference). Figures 10 to 13 ).

[0250] Steps 4-1 to 4-5 are steps to laminate the film that forms layer 104A, unit 103A, intermediate layer 106A, and unit 103A2. Step 8 is the step to laminate the film that forms layer SCRA1 (see reference). Figure 14 Note that steps 4-1 to 4-5 include steps common to the manufacturing methods of light-emitting devices 550A, 550B, and 550C.

[0251] Steps 5-1 and 5-2 are as follows: The laminated film formed in steps 4-1 to 4-5 is micro-processed into a specified shape using photolithography (see reference). Figure 15 and Figure 16Note that steps 5-1 to 5-2 include steps common to the manufacturing methods of light-emitting devices 550A, 550B, and 550C (see [reference]). Figures 17 to 20 ).

[0252] Steps 6-1 to 6-3 are the steps for forming layers 553 and 529 (see reference). Figures 21 to 23 ).

[0253] Steps 7-1 and 7-2 are steps for forming layer 105 and conductive layer 552 (see reference). Figure 24 ).

[0254] <<Example of Manufacturing Method for 550A Light-Emitting Device>>

[0255] The light-emitting device 550A described in this embodiment is manufactured by using a method including the following steps.

[0256] [Step 1]

[0257] In step 1, film REF and film 551 are formed on layer 521 (see reference). Figure 10 For example, films REF and 551 are formed using sputtering.

[0258] Specifically, a laminated film made of stacked titanium (Ti) and aluminum (Al) can be used as a membrane REF. In addition, titanium can be used for membrane 551.

[0259] [Step 2]

[0260] In step 2, layer REFA, electrode 551A, layer REFB, electrode 551B, layer REFC, and electrode 551C are formed on layer 521 (see reference). Figure 11 Note that after step 2, a gap 551AB is formed between electrode 551A and electrode 551B.

[0261] For example, the film REF and film 551 are processed into a specified shape using a photoresist RES and an etching method. Note that sometimes thin portions are formed in layer 521.

[0262] [Step 3-1]

[0263] In step 3-1, layer 528 is formed on electrode 551A, electrode 551B, electrode 551C and layer 521 (refer to...). Figure 12 ).

[0264] For example, layer 528 can be formed using CVD.

[0265] [Step 3-2]

[0266] In step 3-2, layer 528 is processed into a specified shape using anisotropic etching (see reference). Figure 13 For example, layer 528 can be processed into a sidewall shape using a dry etching method.

[0267] [Step 4-1]

[0268] In step 4-1, a film 104a, which will later become layer 104A, is formed on electrodes 551A, 551B and 551C.

[0269] For example, a specified film can be formed using resistance heating. Specifically, organic compounds can be vapor-deposited or co-deposited.

[0270] [Step 4-2]

[0271] In step 4-2, a membrane 103a, which will later become unit 103A, is formed on membrane 104a.

[0272] For example, a specified film can be formed using resistance heating. Specifically, organic compounds can be vapor-deposited or co-deposited. Note that a multilayer film consisting of multiple layers can be used as film 103a.

[0273] [Step 4-3]

[0274] In step 4-3, a membrane 106a, which will later become the intermediate layer 106A, is formed on membrane 103a.

[0275] For example, a specified membrane can be formed using resistance heating. Note that a multilayer membrane consisting of multiple layers can be used as membrane 106a.

[0276] [Step 4-4]

[0277] In step 4-4, a membrane 103a2, which later becomes unit 103A2, is formed on membrane 106a (see reference). Figure 14 ).

[0278] For example, a specified membrane can be formed using resistance heating. Note that a multilayer membrane consisting of multiple layers can be used as membrane 103a2.

[0279] [Steps 4-5]

[0280] In steps 4-5, a membrane SCRa1, which will later become layer SCRA1, is formed on membrane 103a2 (see reference). Figure 14 ).

[0281] For example, materials resistant to oxygen-containing plasmas can be used in the SCRa1 film. Specifically, silicon nitride (SiNx: x is any number greater than 0), silicon oxynitride (SiON), tungsten (W), molybdenum (Mo), aluminum (Al), titanium (Ti), tantalum (Ta), etc., can be used in the SCRa1 film. Thus, when using an oxygen-containing etching gas and dry etching in step 5-2, the SCRa1 film can be used as a hard mask.

[0282] For example, SCRa1 films can be formed using chemical vapor deposition (CVD), atomic layer deposition (ALD), sputtering, resistance heating, and other methods.

[0283] Note that, preferably, steps 4-1 to 4-5 are performed continuously in a manner that does not expose the workpiece to the atmosphere. For example, a processing chamber consisting of interconnected transfer chambers is used, in which a depressurized or filled gas with a controlled impurity concentration is used. This, for example, can reduce impurities that may enter the light-emitting device from cleanrooms or the like during the manufacturing process.

[0284] Note that film SCRa2, which will later become film SCRa2, can be formed before film SCRa1 is formed. Furthermore, it is preferable to use a dense film for one of films SCRa1 and SCRa2. Specifically, a film formed using CVD or ALD methods is used as one of films SCRa1 and SCRa2. This suppresses the penetration of solvents contained in the resist solution, developers, or strippers. Furthermore, for example, in step 5-1, the resist solution can be applied. Furthermore, in step 5-1, the developer solution can be applied. Furthermore, in step 5-1, the stripper solution can be applied. Furthermore, films 103a2, 106a, 103a, and 104a can be protected from dissolution or erosion by the resist solution, developer, or stripper solution.

[0285] Furthermore, in step 6-3, when etching layer SCRA1, the film used as an etching stop can be used as film SCRa2. For example, aluminum oxide (AlOx), hafnium oxide (HfOx), silicon oxide (SiOx), aluminum (Al), copper (Cu), indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), etc., can be used as film SCRa2. Thus, layer SCRA1 can be etched without damaging unit 103A2.

[0286] Furthermore, membranes that can be formed under mild conditions can be used as membranes in contact with membrane 103a2. For example, a specified membrane can be formed using resistance heating or spin coating. Specifically, tris(8-hydroxyquinoline)aluminum(III) (abbreviated as Alq3), polyvinyl alcohol (abbreviated as PVA), polyvinylpyrrolidone (abbreviated as PVP), etc., can be used.

[0287] Therefore, the impact on membrane 103a2 during the formation of membranes SCRa2 and SCRa1 can be mitigated. Furthermore, membranes SCRa2 and SCRa1 can be formed without damaging membrane 103a2.

[0288] Alternatively, a multilayer membrane consisting of multiple layers can be used as membrane SCRa2. For example, a multilayer membrane consisting of an Alq3-containing membrane in contact with membrane 103a2 and an IGZO-containing membrane on top of the Alq3-containing membrane can be used as membrane SCRa2.

[0289] [Step 5-1]

[0290] In step 5-1, the SCRA1 layer is processed into the specified shape using the resist RES and etching method (see reference). Figure 15 Note that, for example, oxygen-containing plasma can be used to remove the resist RES. Alternatively, a stripping solution can be used to remove the resist RES.

[0291] [Step 5-2]

[0292] In step 5-2, layer 104A, unit 103A, intermediate layer 106A, unit 103A2, and layer SCRA2 are processed into the specified shape using layer SCRA1 and etching (see reference). Figure 16 In other words, membranes 104a, 103a, 106a, 103a2, and SCRa2 are removed from electrodes 551B and 551C.

[0293] For example, layer 104A, unit 103A, intermediate layer 106A, unit 103A2, and layer SCRA2 can be processed into a predetermined shape using dry etching. Specifically, oxygen-containing gas can be used as the etching gas. Additionally, layer SCRA1 is used as a hard mask. Furthermore, layer SCRA1 can be removed after processing. For example, fluorine-containing gas can be used as the etching gas to remove layer SCRA1.

[0294] After steps 4-1 to 5-2 are completed, a structure is formed on the workpiece with electrodes 551A of the light-emitting device 550A to unit 103A2, and layers SCRA2 and SCRA1 are formed on unit 103A2. Furthermore, multiple specified electrodes may be exposed, for example. Note that the workpiece formed on the light-emitting device 550A can be referred to as a semi-finished product.

[0295] Furthermore, if step 5-2 is completed and the semi-finished product includes exposed electrode 551B, a light-emitting device 550B can be manufactured on electrode 551B. Similarly, if the semi-finished product includes exposed electrode 551C, a light-emitting device 550C can be manufactured on electrode 551C. In this case, after step 5-2 is completed, the workpiece is introduced into its interior and depressurized to 10. -4 In a vacuum evaporation apparatus with a pressure of approximately Pa, step 4-1 is performed to manufacture the light-emitting device 550B or the light-emitting device 550C.

[0296] Note that property changes sometimes occur when the surfaces of electrodes 551B and 551C are exposed to oxygen-containing plasma. Furthermore, the driving voltages of light-emitting devices 550B and 550C sometimes increase. In step 5-2, adding nitrogen to the oxygen-containing etching gas can suppress these property changes. Furthermore, by performing plasma treatment of the surfaces of electrodes 551B and 551C with nitrogen-containing gas before proceeding to step 4-1, these property changes can be mitigated and the properties restored. As a result, the increase in the driving voltage of light-emitting device 550B can be suppressed. Furthermore, the increase in the driving voltage of light-emitting device 550C can be suppressed.

[0297] If the display device is manufactured using the semi-finished product, proceed to step 6-1 after step 5-2.

[0298] [Step 6-1]

[0299] In step 6-1, layer 529 is formed. Specifically, layer 529 is formed by covering the top surface of layer SCRA1, the side surface of unit 103A2, the side surface of intermediate layer 106A, the side surface of unit 103A, and the side surface of layer 104A.

[0300] For example, layer 529 is formed using the PECVD method.

[0301] [Step 6-2]

[0302] In step 6-2, layer 553 is formed (refer to...) Figure 21 Specifically, layer 553 is formed on layer 529.

[0303] For example, layer 553 is formed using sputtering.

[0304] [Step 6-3]

[0305] In step 6-3, layers 553 and 529 are processed into the specified shape using resist RES and etching (see reference). Figure 22 In addition, the resist RES is removed.

[0306] In addition, for example, openings 553A, 553B and 553C are formed in layer 553 using a resist RES and a wet etching method.

[0307] In addition, for example, openings 529A, 529B and 529C are formed in layer 529 using layer 553 and dry etching.

[0308] Alternatively, for example, openings can be formed in layers SCRA1, SCRB1, and SCRC1 using layer 553 and dry etching.

[0309] [Step 6-4]

[0310] In step 6-4, openings are formed in layers SCRA2, SCRA2, and SCRA2 using layers SCRA1, SCRB1, SCRC1, and etching (see [reference]). Figure 23 Thus, unit 103A2 is exposed in the opening.

[0311] [Step 7-1]

[0312] In step 7-1, layer 105 is formed on unit 103A2. For example, material is deposited by resistance heating.

[0313] [Step 7-2]

[0314] In step 7-2, a conductive layer 552 is formed on layer 105 (see reference). Figure 24 For example, a conductive layer 552 is formed by stacking layers formed using resistance heating and layers formed using sputtering.

[0315] <<Example of Manufacturing Method for 550B Light-Emitting Device>>

[0316] The light-emitting device 550B described in this embodiment is manufactured by using a method including the following steps.

[0317] Specifically, the light-emitting device 550B is manufactured using the same method as steps 1 to 7 of the light-emitting device 550A. Note that layer REFB, electrode 551B, and layer 528 are formed in steps 1 to 3-2 of the manufacturing method of light-emitting device 550A.

[0318] Furthermore, the manufacturing method of the light-emitting device 550B differs from that of the light-emitting device 550A in that: in step 4-1, the semi-finished product of the light-emitting device 550A is used in the workpiece (see...). Figure 16Specifically, the workpiece includes electrode 551A and electrode 551B. Electrode 551A has a layer 104A, a unit 103A, an intermediate layer 106A, a unit 103A2, a layer SCRA2, and a layer SCRA1 formed on it.

[0319] Furthermore, the manufacturing method of light-emitting device 550B differs from that of light-emitting device 550A in the materials and thicknesses used for unit 103B and unit 103B2. These differences will be explained in detail here. Regarding the parts using the same method, the symbols “a” and “A” used in the description of the manufacturing method of light-emitting device 550A will be converted to “b” and “B” respectively for the manufacturing method of light-emitting device 550B, as described above.

[0320] [Step 4-1]

[0321] In step 4-1, a film 104b, which will later become layer 104B, is formed on electrodes 551A, 551B and 551C.

[0322] For example, a specified film can be formed using resistance heating. Specifically, organic compounds can be vapor-deposited or co-deposited.

[0323] [Step 4-2]

[0324] In step 4-2, membrane 103b, which will later become unit 103B, is formed on membrane 104b.

[0325] For example, a specified film can be formed using resistance heating. Specifically, organic compounds can be vapor-deposited or co-deposited. Note that a multilayer film consisting of multiple layers can be used as film 103b.

[0326] [Step 4-3]

[0327] In step 4-3, a membrane 106b, which will later become the intermediate layer 106B, is formed on membrane 103b.

[0328] For example, a specified membrane can be formed using resistance heating. Note that a multilayer membrane consisting of multiple layers can be used as membrane 106b.

[0329] [Step 4-4]

[0330] In step 4-4, membrane 103b2, which will later become unit 103B2, is formed on membrane 106b.

[0331] For example, a specified membrane can be formed using resistance heating. Note that a multilayer membrane consisting of multiple layers can be used as membrane 103b2.

[0332] [Steps 4-5]

[0333] In steps 4-5, a membrane that will later become layer SCRB1 is formed on membrane 103b2. Note that membrane SCRb2, which will later become membrane SCRB2, can be formed before this membrane is formed.

[0334] For example, the method for forming the subsequent SCRB1 film can be the same as the method for forming the SCRa1 film. Furthermore, the method for forming the SCRb2 film can be the same as the method for forming the SCRa2 film.

[0335] [Step 5-1]

[0336] In step 5-1, the SCRB1 layer is processed into the specified shape using the resist RES and etching method (see reference). Figure 17 ).

[0337] [Step 5-2]

[0338] In step 5-2, layer 104B, unit 103B, intermediate layer 106B, unit 103B2, and layer SCRB2 are processed into the specified shape using layer SCRB1 and etching (see reference). Figure 18 In other words, membranes 104b, 103b, 106b, 103b2, and SCRb2 are removed from electrodes 551A and 551C.

[0339] For example, the aforementioned layer 104B, unit 103B, intermediate layer 106B, unit 103B2, and layer SCRB2 can be processed into a predetermined shape using a dry etching method. Specifically, oxygen-containing gas can be used as the etching gas. In addition, layer SCRB1 is used as a hard mask.

[0340] After steps 4-1 to 5-2 are completed, a structure is formed as a workpiece with electrodes 551A of the light-emitting device 550A to unit 103A2, and layers SCRA2 and SCRA1 are formed on unit 103A2. Similarly, a structure is formed as a workpiece with electrodes 551B of the light-emitting device 550B to unit 103B2, and layers SCRB2 and SCRB1 are formed on unit 103B2. Furthermore, multiple predetermined electrodes may be exposed, for example.

[0341] Furthermore, if step 5-2 is completed and the semi-finished product includes the exposed electrode 551C, a light-emitting device 550C can be fabricated on the electrode 551C. In this case, after step 5-2 is completed, the workpiece is introduced into its interior and depressurized to 10. -4 In a vacuum evaporation apparatus with a pressure of approximately Pa, step 4-1 is performed to manufacture the light-emitting device 550C.

[0342] Note that property changes sometimes occur when the surface of electrode 551C is exposed to oxygen-containing plasma. Furthermore, the driving voltage of light-emitting device 550C sometimes increases. In step 5-2, adding nitrogen to the oxygen-containing etching gas can suppress these property changes. Moreover, by performing plasma treatment of the surface of electrode 551C with nitrogen-containing gas before proceeding to step 4-1, these property changes can be mitigated and the properties restored. As a result, the increase in the driving voltage of light-emitting device 550C can be suppressed.

[0343] If the display device is manufactured using the semi-finished product, proceed to step 6-1 after step 5-2.

[0344] <<Example of Manufacturing Method for 550C Light-Emitting Device>>

[0345] The light-emitting device 550C described in this embodiment is manufactured by using a method including the following steps.

[0346] Specifically, the light-emitting device 550C is manufactured using the same method as steps 1 to 7 of the light-emitting device 550A. Note that the layer REFC, electrode 551C, and layer 528 are formed in steps 1 to 3-2 of the manufacturing process of the light-emitting device 550C.

[0347] Furthermore, the manufacturing method of the light-emitting device 550C differs from that of the light-emitting device 550A in that: in step 4-1, the semi-finished product of the light-emitting device 550A is used in the workpiece (see...). Figure 18 Specifically, the workpiece includes electrodes 551A, 551B, and 551C. Electrode 551A has layers 104A, 103A, an intermediate layer 106A, 103A2, SCRA2, and SCRA1 formed on it, and electrode 551B has layers 104B, 103B, an intermediate layer 106B, 103B2, SCRB2, and SCRB1 formed on it.

[0348] Furthermore, the manufacturing method of the light-emitting device 550C differs from that of the light-emitting device 550A in the materials and thicknesses used for unit 103C and unit 103C2. These differences will be explained in detail here. Regarding the parts using the same method, the symbols “a” and “A” used in the description of the manufacturing method of the light-emitting device 550A will be converted to “c” and “C” respectively, and the above description will be applied to the manufacturing method of the light-emitting device 550C.

[0349] [Step 4-1]

[0350] In step 4-1, a film 104c, which will later become layer 104C, is formed on electrodes 551A, 551B and 551C.

[0351] For example, a specified film can be formed using resistance heating. Specifically, organic compounds can be vapor-deposited or co-deposited.

[0352] [Step 4-2]

[0353] In step 4-2, a membrane 103c, which will later become unit 103C, is formed on membrane 104c.

[0354] For example, a specified film can be formed using resistance heating. Specifically, organic compounds can be vapor-deposited or co-deposited. Note that a stacked film of multiple layers can be used as film 103c.

[0355] [Step 4-3]

[0356] In step 4-3, a membrane 106c, which will later become the intermediate layer 106c, is formed on membrane 103c.

[0357] For example, a specified membrane can be formed using resistance heating. Note that a multilayer membrane consisting of multiple layers can be used as membrane 106c.

[0358] [Step 4-4]

[0359] In step 4-4, a membrane 103c2, which will later become unit 103C2, is formed on membrane 106c.

[0360] For example, a specified membrane can be formed using resistance heating. Note that a multilayer membrane consisting of multiple layers can be used as membrane 103c2.

[0361] [Steps 4-5]

[0362] In steps 4-5, a membrane that will later become layer SCRC1 is formed on membrane 103c2. Note that membrane SCRc2, which will later become membrane SCRC2, can be formed before this membrane is formed.

[0363] For example, the method for forming the film that later becomes layer SCRC1 can be the same as the method for forming film SCRa1. Furthermore, the method for forming film SCRc2 can be the same as the method for forming film SCRa2.

[0364] [Step 5-1]

[0365] In step 5-1, the SCRC1 layer is processed into the specified shape using the resist RES and etching method (see reference). Figure 19 ).

[0366] [Step 5-2]

[0367] In step 5-2, layer 104C, unit 103C, intermediate layer 106C, unit 103C2, and layer SCRC2 are processed into the specified shape using layer SCRC1 and etching (see reference). Figure 20 In other words, membranes 104c, 103c, 106c, 103c2, and SCRc2 are removed from electrodes 551A and 551B.

[0368] For example, the aforementioned layer 104C, unit 103C, intermediate layer 106C, unit 103C2, and layer SCRC2 can be processed into a specified shape using dry etching. Specifically, oxygen-containing gas can be used as the etching gas. Additionally, layer SCRC1 is used as a hard mask.

[0369] After steps 4-1 to 5-2 are completed, a structure is formed as a workpiece consisting of electrode 551A of light-emitting device 550A to unit 103A2, with layers SCRA2 and SCRA1 formed on unit 103A2. Furthermore, a structure is formed as a workpiece consisting of electrode 551B of light-emitting device 550B to unit 103B2, with layers SCRB2 and SCRB1 formed on unit 103B2. Additionally, a structure is formed as a workpiece consisting of electrode 551C of light-emitting device 550C to unit 103C2, with layers SCRC2 and SCRC1 formed on unit 103C2. Note that the workpiece formed on light-emitting device 550C can be referred to as a semi-finished product.

[0370] If the display device is manufactured using the semi-finished product, proceed to step 6-1 after step 5-2.

[0371] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0372] (Implementation Method 3)

[0373] In this embodiment, refer to Figure 25 The structure of a light-emitting device in a display device that can be used in one aspect of the present invention is described.

[0374] Figure 25 This is a diagram illustrating the structure of a light-emitting device in a display device that can be used in one aspect of the present invention.

[0375] The structure of the light-emitting device 550X described in this embodiment can be used in a display device according to one aspect of the present invention. Furthermore, the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used for the structure of the light-emitting device 550X can be replaced with "A" to describe the light-emitting device 550A. Similarly, "X" can be replaced with "B" or "C" to apply the structure of the light-emitting device 550X to the light-emitting device 550B or the light-emitting device 550C.

[0376] <Structural Example of the 550X Light-Emitting Device>

[0377] The light-emitting device 550X described in this embodiment includes an electrode 551X, an electrode 552X, and a unit 103X. The electrode 552X overlaps with the electrode 551X, and the unit 103X is sandwiched between the electrode 552X and the electrode 551X.

[0378] <Structural Example of Unit 103X>

[0379] Unit 103X has a single-layer structure or a multi-layer structure. For example, unit 103X includes layer 111X, layer 112X, and layer 113X (see reference). Figure 25 Unit 103X has the function of emitting light ELX.

[0380] Layer 111X is sandwiched between layers 113X and 112X, layer 113X is sandwiched between electrode 552X and layer 111X, and layer 112X is sandwiched between layer 111X and electrode 551X.

[0381] For example, a layer selected from functional layers such as a light-emitting layer, a hole transport layer, an electron transport layer, and a carrier blocking layer can be used in cell 103X. Alternatively, a layer selected from functional layers such as a hole injection layer, an electron injection layer, an exciton blocking layer, and a charge generation layer can be used in cell 103X.

[0382] <<Example of a Layer 112X Structure>>

[0383] For example, a hole-transporting material can be used for layer 112X. Alternatively, layer 112X can be referred to as a hole transport layer. Note that it is preferable to use a material with a band gap larger than that of the luminescent material in layer 111X for layer 112X. Therefore, energy transfer from excitons generated in layer 111X to layer 112X can be suppressed.

[0384] Hole-transporting materials

[0385] The hole mobility can be 1×10 -6 cm 2 Materials with a value of / Vs or higher are suitable for hole transport materials.

[0386] For example, amine compounds or organic compounds with π-electron-rich heteroaromatic ring skeletons can be used in hole-transporting materials. Specifically, compounds with aromatic amine skeletons, carbazole skeletons, thiophene skeletons, furan skeletons, etc., can be used. In particular, compounds with aromatic amine skeletons or carbazole skeletons are preferred because they exhibit good reliability and high hole transport properties and help reduce the driving voltage.

[0387] As compounds with an aromatic amine skeleton, for example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminebiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spirobis[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminebiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBA) can be used. 1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCCNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluorene-2-amine (abbreviated as: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirodi[9H-fluorene]-2-amine (abbreviated as: PCBASF), etc.

[0388] Compounds with a carbazole skeleton can be used, for example, 1,3-bis(N-carbazole)benzene (mCP), 4,4'-bis(N-carbazole)biphenyl (CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (PCCP), etc.

[0389] As compounds with a thiophene skeleton, for example, 4,4',4''-(benzyl-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviated as: DBTFLP-III), 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as: DBTFLP-IV), etc.

[0390] As compounds with a furan skeleton, for example, 4,4',4''-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviated as DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviated as mmDBFFLBi-II) can be used.

[0391] <<Structural Examples of Layer 113X>> For example, electron transport materials, materials with an anthracene framework, and mixed materials can be used for layer 113X. Layer 113X can also be referred to as an electron transport layer. Note that it is preferable to use a material with a band gap larger than that of the luminescent material in layer 111X for layer 113X. Therefore, energy transfer from excitons generated in layer 111X to layer 113X can be suppressed.

[0392] Electron transport materials

[0393] For example, the following material is suitable for use as an electron transport material: having an electron mobility of 1 × 10⁻⁶ under an electric field strength V / cm square root of 600. -7 cm 2 / Vs or more and 5×10 -5 cm 2 Materials with a value of / Vs or less. Therefore, the electron transport properties in the electron transport layer can be controlled. Alternatively, the amount of electrons injected into the luminescent layer can be controlled. Or, the luminescent layer can be prevented from becoming an electron-overloaded state.

[0394] For example, metal complexes or organic compounds with π-electron-deficient heteroaromatic ring skeletons can be used in electron transport materials.

[0395] As metal complexes, for example, bis(10-hydroxybenzo[h]quinoline) beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol) aluminum(III) (abbreviated as BAlq), bis(8-hydroxyquinoline) zinc(II) (abbreviated as Znq), bis[2-(2-benzoxazolyl)phenol] zinc(II) (abbreviated as ZnPBO), bis[2-(2-benzothiazolyl)phenol] zinc(II) (abbreviated as ZnBTZ), etc.

[0396] Organic compounds with π-electron-deficient heterocyclic aromatic ring skeletons can be used, for example, heterocyclic compounds with a polyazole skeleton, heterocyclic compounds with a diazine skeleton, heterocyclic compounds with a pyridine skeleton, and heterocyclic compounds with a triazine skeleton. In particular, heterocyclic compounds with a diazine skeleton or a pyridine skeleton are preferred due to their good reliability. In addition, heterocyclic compounds with a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties, thereby reducing the driving voltage.

[0397] As heterocyclic compounds with a polyazole skeleton, examples include 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]phenyl (abbreviated as OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviated as CO11), 2,2',2''-(1,3,5-phenyltriyl)tris(1-phenyl-1H-benzimidazole) (abbreviated as TPBI), 2-[3-(dibenzothiophene-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as mDBTBIm-II), etc.

[0398] As heterocyclic compounds with a diazine skeleton, for example, 2-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 2mDBTPDBq-II), 2-[3-(3'-dibenzothiophene-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviated as: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[ f,h]quinoxaline (abbreviated as: 2mCzBPDBq), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviated as: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothiophene)phenyl]pyrimidine (abbreviated as: 4,6mDBTP2Pm-II), 4,8-bis[3-(dibenzothiophene-4-yl)phenyl]benzo[h]quinoxaline (abbreviated as: 4,8mDBtP2Bqn), etc.

[0399] As heterocyclic compounds with a pyridine skeleton, 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB) can be used, for example.

[0400] As heterocyclic compounds with a triazine skeleton, 2-[3'-(9,9-dimethyl-9H-fluorene-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviated as mFBPTzn) and 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobis[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn) can be used, for example. 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), etc.

[0401] [Materials with an anthracene skeleton]

[0402] Organic compounds having an anthracene skeleton can be used in layer 113X. In particular, organic compounds having both an anthracene skeleton and a heterocyclic skeleton can be suitably used.

[0403] For example, an organic compound having both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used in layer 113X. Alternatively, an organic compound having both a nitrogen-containing five-membered ring skeleton containing two heteroatoms and an anthracene skeleton can be used in layer 113X. Specifically, pyrazole rings, imidazole rings, oxazole rings, thiazole rings, etc., are suitable for use in this heterocyclic skeleton.

[0404] Alternatively, for example, an organic compound having both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton can be used for layer 113X. Alternatively, an organic compound having both a nitrogen-containing six-membered ring skeleton containing two heteroatoms and an anthracene skeleton can be used for layer 113X. Specifically, pyrazine rings, pyridine rings, pyridazine rings, etc., are suitable for use in this heterocyclic skeleton.

[0405] [Examples of hybrid material structures]

[0406] Alternatively, a material containing multiple substances can be used for layer 113X. Specifically, a mixed material comprising an alkali metal, an alkali metal compound or an alkali metal complex, and an electron transport material can be used for layer 113X. Note that the highest occupied molecular orbital (HOMO) energy level of the electron transport material is more preferably -6.0 eV or higher.

[0407] Note that this hybrid material can be used in layer 113X by combining it with a structure for layer 104X, as will be described separately. For example, a composite material of an electron-receiving material and a hole-transporting material can be used in layer 104X. Specifically, a composite material of an electron-receiving material and a material having a deeper HOMO level HM1 with a voltage greater than -5.7 eV and less than -5.4 eV can be used in layer 104X (see [reference]). Figure 25 By combining this composite material with the structure used in layer 104X and then using this composite material in layer 113X, the reliability of the light-emitting device can be improved.

[0408] Furthermore, it is preferable to combine the structure of using the mixed material in layer 113X and the composite material in layer 104X with a hole-transporting material in layer 112X. For example, a material having a HOMO level HM2 in the range of -0.2 eV to 0 eV relative to the deeper HOMO level HM1 can be used in layer 112X (see reference). Figure 25 This improves the reliability of the light-emitting device. Note that in this specification, the above-mentioned light-emitting device is sometimes referred to as a Recombination-Site Tailoring Injection structure (ReSTI structure).

[0409] Alkali metals, alkali metal compounds, or alkali metal complexes are preferably present in a manner that creates a concentration difference (including the case where the concentration is 0) along the thickness direction of layer 113X.

[0410] For example, metal complexes having an 8-hydroxyquinoline structure can be used. Alternatively, methyl-substituted derivatives of metal complexes having an 8-hydroxyquinoline structure (e.g., 2-methyl-substituted or 5-methyl-substituted derivatives) can also be used.

[0411] As metal complexes having an 8-hydroxyquinoline structure, 8-hydroxyquinoline-lithium (Liq) and 8-hydroxyquinoline-sodium (Naq) can be used. In particular, among complexes of monovalent metal ions, lithium complexes are preferred, and Liq is more preferred.

[0412] <<Example 1 of the structure of layer 111X>>

[0413] For example, a luminescent material or a luminescent material combined with a host material can be used in layer 111X. Layer 111X can also be referred to as a light-emitting layer. Preferably, layer 111X is disposed in regions where holes and electrons recombine. This allows for the efficient conversion of energy generated by carrier recombination into light for emission.

[0414] Furthermore, layer 111X is preferably disposed away from metals used for electrodes, etc. Therefore, quenching phenomena caused by metals used for electrodes, etc., can be suppressed.

[0415] Furthermore, it is preferable to adjust the distance from the reflective electrode to the layer 111X so that the layer 111X is positioned at an appropriate location corresponding to the emission wavelength. This allows the amplitude to be mutually reinforced by utilizing the interference phenomenon between the light reflected from the electrode and the light emitted by the layer 111X. Additionally, light of a predetermined wavelength can be amplified to narrow the spectrum. Furthermore, a vivid emission color with higher intensity can be obtained. In other words, a microcavity structure can be obtained by positioning the layer 111X at an appropriate location between the electrodes.

[0416] For example, fluorescent substances, phosphorescent substances, or substances exhibiting thermally activated delayed fluorescence (TADF) (also known as TADF materials) can be used in luminescent materials. Thus, the energy generated by carrier recombination can be emitted from the luminescent material as light (ELX) (see reference). Figure 25 ).

[0417] [Fluorescent substances]

[0418] Fluorescent materials can be used in layer 111X. For example, the following fluorescent materials can be used in layer 111X. Note that the fluorescent materials are not limited to these; various known fluorescent materials can be used in layer 111X.

[0419] Specifically, 5,6-bis[4-(10-phenyl-9-anthrayl)phenyl]-2,2'-bipyridine (abbreviated as: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthrayl)biphenyl-4-yl]-2,2'-bipyridine (abbreviated as: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluorene-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluorene-9-yl)phenyl]pyrene-1, 6-Diamine (abbreviated as: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviated as: YGA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthrayl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthrayl)triphenylamine (abbreviated as: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthrayl)phenyl]-9H-carbazole-3-amine (abbreviated as: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviated as TBP), 4-(10-phenyl-9-anthrayl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviated as DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthrayl)phenyl]-9H-carbazole-3-amine (abbreviated as 2PCAPPA), N,N'-( Pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc.

[0420] In particular, fused aromatic diamine compounds, such as pyrene diamine compounds like 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred due to their high hole trapping ability and good luminescence efficiency or reliability.

[0421] Alternatively, N-[4-(9,10-diphenyl-2-anthrayl)phenyl]-N,N',N'-triphenyl-1,4-phenylene diamine (abbreviated as: 2DPAPPA), N,N,N',N',N'',N'',N'',N''',N'''-octaphenyldibenzo[g,p]-2,7,10,15-tetramine (abbreviated as: DBC1), coumarin 30, N-(9,10-diphenyl-2-anthrayl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthrayl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCABPhA), N-(9,10-diphenyl-2-... -Anthracene)-N,N',N'-triphenyl-1,4-phenylene diamine (abbreviated as: 2DPAPA), 9,10-bis(2-biphenyl)-2-(N,N',N'-triphenyl-1,4-phenylene diamine-N-yl)anthracene (abbreviated as: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviated as: 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviated as: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviated as: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetraphenyl (abbreviated as: BPT), etc.

[0422] Alternatively, 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-ylidene)malonitrile (abbreviated as: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinazin-9-yl)vinyl]-4H-pyran-4-ylidene}malonitrile (abbreviated as: DCM2), N,N,N' can be used. N'-Tetra(4-methylphenyl)-tetraphenyl-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetra(4-methylphenyl)acenaphthene[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5-diamine] H-Benzo[ij]quinazine-9-yl)vinyl]-4H-pyran-4-ylidene}malonium (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinazine-9-yl)vinyl]-4H-pyran-4-ylidene}malonium (abbreviation: DCJTB), 2-(2,6-bis) {2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)malononitrile (abbreviated as BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinazin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as BisDCJTM), etc.

[0423] [Phosphorescent substances]

[0424] Phosphorescent materials can be used in layer 111X. For example, the following phosphorescent materials can be used in layer 111X. Note that the phosphorescent materials are not limited to these, and various known phosphorescent materials can be used in layer 111X.

[0425] For example, the following materials can be used in layer 111X: organometallic iridium complexes with a 4H-triazole skeleton, organometallic iridium complexes with a 1H-triazole skeleton, organometallic iridium complexes with an imidazole skeleton, organometallic iridium complexes with electron-withdrawing groups and phenylpyridine derivatives as ligands, organometallic iridium complexes with a pyrimidine skeleton, organometallic iridium complexes with a pyrazine skeleton, organometallic iridium complexes with a pyridine skeleton, rare earth metal complexes, platinum complexes, etc.

[0426] [Phosphorescent material (blue)]

[0427] Organometallic iridium complexes with a 4H-triazole skeleton, for example, can be tri{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]), tri(5-methyl-3,4-diphenyl-4H-1,2,4-triazol(triazolato))iridium(III) (abbreviated as [Ir(Mptz)3]), tri[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazol(triazolato)]iridium(III) (abbreviated as [Ir(iPrptz-3b)3]), etc.

[0428] Organometallic iridium complexes with a 1H-triazole skeleton, for example, can be tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole (triazolato)]iridium(III) (abbreviated as [Ir(Mptz1-mp)3]) or tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole (triazolato))iridium(III) (abbreviated as [Ir(Prptz1-Me)3]).

[0429] Organometallic iridium complexes with an imidazole skeleton, for example, fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazolium]iridium(III) (abbreviated as [Ir(iPrpim)3]) and tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as [Ir(dmpimpt-Me)3]) can be used.

[0430] Organometallic iridium complexes, such as those using phenylpyridine derivatives with electron-withdrawing groups as ligands, can be used, for example, bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ Iridium(III) tetratetra(1-pyrazole)borate (abbreviated as FIR6), bis[2-(4',6'-difluorophenyl)pyridinium-N,C] 2’ Iridium(III)pyridinecarboxylate (abbreviated as FIRPIC), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinium-N,C 2’}Iridium(III)pyridinecarboxylate (abbreviated as: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ Iridium (III) acetylacetone (abbreviated as FIracac), etc.

[0431] The aforementioned substance is a compound that emits blue phosphorescence and has a peak emission wavelength between 440 nm and 520 nm.

[0432] [Phosphorescent material (green)]

[0433] As organometallic iridium complexes with a pyrimidine skeleton, for example, tris(4-methyl-6-phenylpyrimidine)iridium(III) (abbreviated as: [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidine)iridium(III) (abbreviated as: [Ir(tBuppm)3]), (acetylacetonate)bis(6-methyl-4-phenylpyrimidine)iridium(III) (abbreviated as: [Ir(mppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl ... and (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidine)iridium(III) (abbreviated as: [Ir(mppm)3]) can be used. (r(tBuppm)2(acac)) , (acetylacetonate)bis[6-(2-norborneol)-4-phenylpyrimidine]iridium(III) (abbreviated as: [Ir(nbppm)2(acac)]), (acetylacetonate)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidine]iridium(III) (abbreviated as: [Ir(mpmppm)2(acac)]), (acetylacetonate)bis(4,6-diphenylpyrimidine)iridium(III) (abbreviated as: [Ir(dppm)2(acac)]), etc.

[0434] As organometallic iridium complexes with a pyrazine skeleton, for example, (acetylacetonate)bis(3,5-dimethyl-2-phenylpyrazine)iridium(III) (abbreviated as: [Ir(mppr-Me)2(acac)]) and (acetylacetonate)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviated as: [Ir(mppr-iPr)2(acac)]) can be used.

[0435] As organometallic iridium complexes with a pyridine skeleton, for example, tris(2-phenylpyridinium-N,C) can be used. 2’ Iridium (III) (abbreviated as: [Ir(ppy)3]), bis(2-phenylpyridinium-N,C) 2’ Iridium (III) acetylacetone (abbreviated as: [Ir(ppy)2(acac)]), bis(benzo[h]quinoline)iridium (III) acetylacetone (abbreviated as: [Ir(bzq)2(acac)]), tri(benzo[h]quinoline)iridium (III) (abbreviated as: [Ir(bzq)3]), tri(2-phenylquinoline-N,C 2’ Iridium (III) (abbreviated as: [Ir(pq)3]), bis(2-phenylquinoline-N,C) 2’Iridium(III)acetylacetone (abbreviated as: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridyl-κC]bis[2-(5-d3-methyl-2-pyridyl-κN) 2 [2-(2-pyridyl-κN)benzofurano[2,3-b]pyridyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as: [Ir(5mppy-d3)2(mbfpypy-d3)]), [2-d3-methyl-(2-pyridyl-κN)benzofurano[2,3-b]pyridyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as: [Ir(ppy)2(mbfpypy-d3)]), etc.

[0436] Examples of rare earth metal complexes include tri(acetylacetone)(monophenanthrene)terbium(III) (abbreviated as: [Tb(acac)3(Phen)]).

[0437] The aforementioned substances are primarily compounds that emit green phosphorescence, with emission wavelength peaks in the 500 nm to 600 nm range. Furthermore, organometallic iridium complexes with a pyrimidine framework exhibit particularly superior reliability and luminescent efficiency.

[0438] [Phosphorescent substance (red)]

[0439] As organometallic iridium complexes with a pyrimidine skeleton, for example, (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinium]iridium(III) (abbreviated as: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinium](dineopentamethanium)iridium(III) (abbreviated as: [Ir(5mdppm)2(dpm)]), bis[4,6-bis(naphthyl-1-yl)pyrimidinium](dineopentamethanium)iridium(III) (abbreviated as: [Ir(d1npm)2(dpm)]), etc.

[0440] As organometallic iridium complexes with a pyrazine skeleton, for example, (acetylacetonate)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dineovaleylmethane)iridium(III) (abbreviated as: [Ir(tppr)2(dpm)]), and (acetylacetonate)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviated as: [Ir(Fdpq)2(acac)]) can be used.

[0441] As organometallic iridium complexes with a pyridine skeleton, for example, tris(1-phenylisoquinoline-N,C) can be used. 2’Iridium (III) (abbreviated as: [Ir(piq)3]), bis(1-phenylisoquinoline-N,C) 2’ Iridium (III) acetylacetone (abbreviated as: [Ir(piq)2(acac)]) etc.

[0442] As rare earth metal complexes, for example, tris(1,3-diphenyl-1,3-propanedione) (monopraninol) europium(III) (abbreviated as: [Eu(DBM)3(Phen)]) and tris[1-(2-thiophenecarboxyl)-3,3,3-trifluoroacetone] (monopraninol) europium(III) (abbreviated as: [Eu(TTA)3(Phen)]) can be used.

[0443] As platinum complexes, for example, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP) can be used.

[0444] The aforementioned substances are compounds that emit red phosphorescence and have an emission peak in the 600 nm to 700 nm range. Additionally, organometallic iridium complexes with a pyrazine framework can also produce red emission, possessing chromaticity suitable for use in display devices.

[0445] [Substances exhibiting thermally activated delayed fluorescence (TADF)]

[0446] TADF material can be used in layer 111X. Furthermore, when using TADF material as the luminescent material, the S1 energy level of the host material is preferably higher than the S1 energy level of the TADF material. Additionally, the T1 energy level of the host material is preferably higher than the T1 energy level of the TADF material.

[0447] For example, the TADF material shown below can be used in luminescent materials. Note that this is not a limitation; various known TADF materials can be used.

[0448] Because the energy difference between the S1 and T1 levels in TADF materials is small, a small amount of thermal energy can be used to convert the triplet excited state into a singlet excited state via antisystem crossover (upconversion). Therefore, singlet excited states can be generated efficiently from triplet excited states. Furthermore, the triplet excitation energy can be converted into luminescence.

[0449] Exciplexes formed by two substances in an excited state have the function of converting triple excitation energy into single excitation energy due to the extremely small difference between the S1 and T1 energy levels.

[0450] Note that the phosphorescence spectrum observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 energy level. For TADF materials, it is preferable that the difference between the S1 and T1 energy levels is 0.3 eV or less, more preferably 0.2 eV or less, when the wavelength energy of the extrapolated line obtained by drawing a tangent at the tail of the short-wavelength side of the fluorescence spectrum is taken as the S1 energy level and the wavelength energy of the extrapolated line obtained by drawing a tangent at the tail of the short-wavelength side of the phosphorescence spectrum is taken as the T1 energy level.

[0451] For example, fullerenes and their derivatives, acridines and their derivatives, and eosin derivatives can be used in TADF materials. Additionally, metal porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can be used in TADF materials.

[0452] Specifically, the following structural formulas can be used: protoporphyrin-tin fluoride complex (SnF2(ProtoIX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), tetramethyl coprophyrin-tin fluoride complex (SnF2(Copro III-4Me), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), protoporphyrin-tin fluoride complex (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (PtCl2OEP).

[0453] [Chemical Formula 1]

[0454]

[0455] Alternatively, heterocyclic compounds having one or both of π-electron-rich and π-electron-deficient heterocyclic rings can be used in TADF materials.

[0456] Specifically, the following structural formulas can be used: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviated as: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl]phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as: PCCzPTzn), and 2-[4-(10H-phenoxazine-10-yl]phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as: PCCzPTzn). [4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazine (abbreviated as PXZ-TRZ), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-oxanthracene-9-one (abbreviated as ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridin)phenyl]sulfone (abbreviated as DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviated as ACRSA), etc.

[0457] [Chemical Formula 2]

[0458]

[0459] Because these heterocyclic compounds possess both π-electron-rich and π-electron-deficient heteroaromatic rings, they exhibit high electron and hole transport capabilities, making them preferred. In particular, among the skeletons with π-electron-deficient heteroaromatic rings, pyridine, diazine (pyrimidine, pyrazine, pyridazine), and triazine skeletons are stable and reliable, and are therefore preferred. Especially, benzofuran-pyrimidine, benzothiophene-pyrimidine, benzofuran-pyrazine, and benzothiophene-pyrazine skeletons exhibit high electron acceptability and good reliability, and are therefore preferred.

[0460] Furthermore, among the skeletons having π-electron-rich heteroaromatic rings, acridine, phenoxazine, phenothiazine, furan, thiophene, and pyrrole skeletons are stable and reliable, so having at least one of these skeletons is preferred. Additionally, dibenzofuran skeleton is preferred as the furan skeleton, and dibenzothiophene skeleton is preferred as the thiophene skeleton. As the pyrrole skeleton, indole, carbazole, indolocarbazole, bicarbazole, and 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeletons are particularly preferred.

[0461] In substances where π-electron-rich and π-electron-deficient heteroaromatic rings are directly bonded, the π-electron-rich heteroaromatic ring exhibits high electron-donating capacity and the π-electron-deficient heteroaromatic ring high electron-accepting capacity, while the energy difference between the S1 and T1 energy levels decreases, resulting in highly efficient thermally activated delayed fluorescence. Therefore, it is particularly preferred. Alternatively, aromatic rings bonded with electron-withdrawing groups such as cyano groups can be used instead of π-electron-deficient heteroaromatic rings. Furthermore, aromatic amine skeletons, phenazine skeletons, etc., can be used as π-electron-rich skeletons.

[0462] In addition, as a π-electron-deficient skeleton, the following can be used: oxane skeleton, thioxanthenedioxide skeleton, oxadiazole skeleton, triazole skeleton, imidazole skeleton, anthraquinone skeleton, boron-containing skeleton such as phenylborane or boranthrene, aromatic rings or heteroaromatic rings with nitrile or cyano groups such as benzonitrile or cyanobenzene, carbonyl skeleton such as benzophenone, phosphine oxide skeleton, sulfone skeleton, etc.

[0463] Thus, at least one of the π-electron-deficient and π-electron-rich heteroaryl rings can be replaced by a π-electron-deficient framework and a π-electron-rich framework.

[0464] <<Example 2 of the structure of layer 111X>>

[0465] Carrier-transporting materials can be used as the host material. For example, hole-transporting materials, electron-transporting materials, substances exhibiting thermally activated delayed fluorescence (TADF), materials with an anthracene framework, and mixed materials can be used as the host material. Note that materials with a band gap larger than that of the luminescent material in layer 111X are preferably used as the host material. Therefore, energy transfer from excitons to the host material generated in layer 111X can be suppressed.

[0466] Hole-transporting materials

[0467] The hole mobility can be 1×10 -6 cm 2 Materials with a density of / Vs or higher are suitable for use as hole-transporting materials. For example, hole-transporting materials suitable for layer 112X can be used for layer 111X.

[0468] Electron transport materials

[0469] Metal complexes or organic compounds with π-electron-deficient heteroaromatic ring skeletons can be used in electron transport materials. For example, electron transport materials that can be used in layer 113X can be used in layer 111X.

[0470] [Materials with an anthracene skeleton]

[0471] Organic compounds with an anthracene framework can be used as host materials. In particular, they are well-suited for use as fluorescent materials. This allows for the development of light-emitting devices with both high luminous efficiency and durability.

[0472] As anthracene-based organic compounds, those with a diphenylanthracene skeleton, especially those with a 9,10-diphenylanthracene skeleton, are chemically stable and therefore preferred. Furthermore, when the host material has a carbazole skeleton, hole injection and transport are improved, making it preferred. In particular, when the host material has a dibenzo-carbazole skeleton, its HOMO level is approximately 0.1 eV shallower than that of carbazole, which not only facilitates hole injection but also improves hole transport and heat resistance, making it preferred. Note that from the perspective of hole injection and transport, a benzo[a]fluorene skeleton or a dibenzo[a]fluorene skeleton can also be used instead of a carbazole skeleton.

[0473] Therefore, substances having a 9,10-diphenylanthracene skeleton and a carbazole skeleton, substances having a 9,10-diphenylanthracene skeleton and a benzo[carbazole] skeleton, and substances having a 9,10-diphenylanthracene skeleton and a dibenzo[carbazole] skeleton are preferably used as the main material.

[0474] For example, 6-[3-(9,10-diphenyl-2-anthracene)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-phenyl-3-[4-(10-phenyl-9- [4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as PCzPA), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthracenyl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), etc.

[0475] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties.

[0476] [Substances exhibiting thermally activated delayed fluorescence (TADF)]

[0477] TADF materials can be used as the host material. When using TADF materials as the host material, the triplet excitation energy generated in the TADF material can be converted into a singlet excitation energy through antisystem crossing. Furthermore, the excitation energy can be transferred to the luminescent material. In other words, the TADF material is used as an energy donor, and the luminescent material is used as an energy acceptor. This improves the luminous efficiency of the light-emitting device.

[0478] This is highly effective when the luminescent material is a fluorescent material. Furthermore, to achieve high luminescence efficiency, the S1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent material. Additionally, the T1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent material. Therefore, the T1 energy level of the TADF material is preferably higher than the T1 energy level of the fluorescent material.

[0479] Furthermore, it is preferable to use a TADF material that emits light at a wavelength that overlaps with the absorption band on the lowest energy side of the fluorescent material. This allows for efficient transfer of excitation energy from the TADF material to the fluorescent material, resulting in highly efficient luminescence, and is therefore preferred.

[0480] To efficiently generate a singlet excitation energy from a triplet excitation energy via antisystem crossing, it is preferable to generate carrier recombination within the TADF material. Furthermore, it is preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. For this purpose, the fluorescent material preferably has a protecting group surrounding its luminescent component (the backbone that causes luminescence). This protecting group is preferably a substituent without π bonds, preferably a saturated hydrocarbon; specifically, examples include alkyl groups with 3 or more but less than 10 carbon atoms, substituted or unsubstituted cycloalkyl groups with 3 or more but less than 10 carbon atoms, and trialkylsilyl groups with 3 or more but less than 10 carbon atoms; more preferably, multiple protecting groups are preferred. Substituents without π bonds have almost no function in transporting carriers, so they have little effect on carrier transport or carrier recombination, allowing the TADF material and the luminescent component of the fluorescent material to be kept apart.

[0481] Here, the luminescent body refers to the atomic group (backbone) that causes luminescence in a fluorescent material. The luminescent body is preferably a backbone with π bonds, more preferably an aromatic ring, and even more preferably a fused aromatic ring or a fused heteroaromatic ring.

[0482] Examples of luminescent materials include those with phenanthrene, stilbene, acridinone, phenoxazine, phenothiazine, naphthiazine, anthracene, fluorene, β-carbamate, triphenylene, tetraphenylene, pyrene, perylene, coumarin, quinacridone, and naphthobisbenzofuran skeletons. In particular, fluorescent materials having naphthalene, anthracene, fluorene, β-carbamate, triphenylene, tetraphenylene, pyrene, perylene, coumarin, quinacridone, and naphthobisbenzofuran skeletons exhibit high fluorescence quantum yields and are therefore preferred.

[0483] For example, TADF materials, which can be used in luminescent materials, can be used as the host material.

[0484] [Example 1 of a hybrid material structure]

[0485] Furthermore, materials that mix multiple substances can be used as the host material. For example, electron transport materials and hole transport materials can be used in a hybrid material. In the hybrid material, the weight ratio of hole transport material relative to electron transport material can be (hole transport material / electron transport material) = (1 / 19) or more and (19 / 1) or less. This allows for easy adjustment of the carrier transport properties of layer 111X. Additionally, the control of the composite region can be made simpler.

[0486] [Example 2 of a hybrid material structure]

[0487] Materials containing phosphorescent substances can be used as the host material. When phosphorescent substances are used as luminescent materials or fluorescent materials, they can be used as energy donors to supply excitation energy to the fluorescent materials.

[0488] [Example 3 of a hybrid material structure]

[0489] A mixed material containing materials that form exciplexes can be used as the host material. For example, a material whose emission spectrum overlaps with the wavelength of the absorption band on the lowest energy side of the luminescent material can be used as the host material. Therefore, energy transfer can be facilitated, thereby improving luminescence efficiency. Furthermore, the driving voltage can be suppressed. By employing such a structure, ExTET (Exciplex-Triplet Energy Transfer) luminescence utilizing energy transfer from the exciplex to the luminescent material (phosphorescent material) can be efficiently obtained.

[0490] Phosphorescent materials can be used in at least one of the materials forming excitocomplexes. This allows for the utilization of antisystem crossing. Alternatively, triple excitation energies can be efficiently converted into single excitation energies.

[0491] As a combination of materials for forming exciton complexes, the HOMO energy level of the hole-transporting material is preferably higher than the HOMO energy level of the electron-transporting material. Alternatively, the lowest unoccupied molecular orbital (LUMO) energy level of the hole-transporting material is preferably higher than the LUMO energy level of the electron-transporting material. This allows for efficient formation of exciton complexes. Furthermore, the LUMO and HOMO energy levels of the material can be determined from electrochemical properties (reduction potential and oxidation potential). Specifically, the reduction and oxidation potentials can be measured using cyclic voltammetry (CV).

[0492] Note that the formation of excitocomplexes can be confirmed, for example, by comparing the emission spectra of hole-transporting materials, electron-transporting materials, and the emission spectra of a hybrid film formed by mixing these materials. When the emission spectrum of the hybrid film is observed to shift towards a longer wavelength (or to have a new peak on the longer wavelength side) compared to the emission spectra of each material, it indicates the formation of excitocomplexes. Alternatively, by comparing the transient photoluminescence (PL) of hole-transporting materials, the transient PL of electron-transporting materials, and the transient PL of a hybrid film formed by mixing these materials, when a difference in transient response is observed, such as the hybrid film having a longer lifetime component or a higher proportion of delayed components compared to the transient PL lifetimes of each material, it indicates the formation of excitocomplexes. Furthermore, the aforementioned transient PL can be referred to as transient electroluminescence (EL). In other words, by comparing the transient EL of hole-transporting materials, the transient EL of electron-transporting materials, and the transient EL of a hybrid film of these materials, and observing the differences in transient responses, the formation of excitocomplexes can be confirmed.

[0493] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0494] (Implementation Method 4)

[0495] In this embodiment, refer to Figure 25 The structure of a light-emitting device in a display device that can be used in one aspect of the present invention is described.

[0496] The structure of the light-emitting device 550X described in this embodiment can be used in a display device according to one aspect of the present invention. Furthermore, the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used for the structure of the light-emitting device 550X can be replaced with "A" to describe the light-emitting device 550A. Similarly, "X" can be replaced with "B" or "C" to apply the structure of the light-emitting device 550X to the light-emitting device 550B or the light-emitting device 550C.

[0497] <Structural Example of the 550X Light-Emitting Device>

[0498] The light-emitting device 550X described in this embodiment includes electrode 551X, electrode 552X, unit 103X, and layer 104X (see reference). Figure 25 ).

[0499] Furthermore, electrode 552X overlaps with electrode 551X, and unit 103X is sandwiched between electrode 551X and electrode 552X. Additionally, layer 104X is sandwiched between electrode 551X and unit 103X. Note that, for example, the structure described in Embodiment 3 can be used for unit 103X.

[0500] <Structural Example of Electrode 551X>

[0501] For example, conductive materials can be used in electrode 551X. Specifically, films containing metals, alloys, or conductive compounds can be used in electrode 551X in a single layer or in a stack.

[0502] For example, a film that efficiently reflects light can be used in electrode 551X. Specifically, an alloy containing silver and copper, an alloy containing silver and palladium, or a metal film such as aluminum can be used in electrode 551X.

[0503] Alternatively, for example, a metal film that transmits a portion of the light and reflects the rest can be used for electrode 551X. This allows the light-emitting device 550X to have a microcavity structure. Alternatively, light of a specified wavelength can be extracted more efficiently compared to other light sources. Alternatively, light with a narrow full width at half maximum (FWHM) or full width at half maximum (FWHM) of the spectrum can be extracted. Furthermore, brightly colored light can be extracted.

[0504] Alternatively, for example, a film that is transparent to visible light can be used for electrode 551X. Specifically, a metal film, alloy film, or conductive oxide film that is thin enough to transmit light can be used as a single layer or in a stack for electrode 551X.

[0505] In particular, it is preferable to use a material with a work function of 4.0 eV or higher for electrode 551X.

[0506] For example, conductive oxides containing indium can be used. Specifically, indium oxide, indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide (ITSO), indium zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO) can be used.

[0507] Alternatively, conductive oxides containing zinc can be used, for example. Specifically, zinc oxide, zinc oxide with gallium added, zinc oxide with aluminum added, etc., can be used.

[0508] Alternatively, materials such as gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metallic materials (e.g., titanium nitride) can be used. Alternatively, graphene can be used.

[0509] <<Example 1 of a 104X Layer Structure>>

[0510] For example, a hole-injecting material can be used for layer 104X. Alternatively, layer 104X can be referred to as a hole-injecting layer.

[0511] For example, the hole mobility can be 1×10 when the square root of the electric field strength V / cm is 600. -3 Materials with a density of less than 1 cm / Vs can be used for layer 104X. Alternatively, materials with a density of 1×10⁻⁶ can be used. 4 Ω･cm or more and 1×10 7 A film with a resistivity of less than Ω·cm is used for layer 104X. Layer 104X preferably has a resistivity of 5 × 10⁻⁶ Ω·cm. 4 Ω･cm or more and 1×10 7 A resistivity of less than Ω·cm, more preferably 1×10⁻⁶. 5 Ω･cm or more and 1×10 7 Resistivity below Ω·cm.

[0512] <<Example 2 of a 104X Layer Structure>>

[0513] Specifically, an electron-receiving material can be used in layer 104X. Alternatively, a composite material containing multiple materials can be used in layer 104X. This allows for the easy injection of holes from electrode 551X, for example. Alternatively, the driving voltage of the light-emitting device 550X can be reduced.

[0514] Electron-receiving substances

[0515] Organic and inorganic compounds can be used as electron-accepting materials. These materials can extract electrons from adjacent hole transport layers or hole transport materials by applying an electric field.

[0516] For example, compounds with electron-withdrawing groups (halogen or cyano groups) can be used as electron-accepting materials. Furthermore, electron-accepting organic compounds can be easily deposited using vapor deposition. Therefore, the productivity of the 550X light-emitting device can be improved.

[0517] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinone dimethyl ether (abbreviated as F4-TCNQ), chloroquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinone dimethyl ether (abbreviated as F6-TCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malonitrile, etc., can be used.

[0518] In particular, compounds with electron-withdrawing groups such as HAT-CN bonded to fused aromatic rings with multiple heteroatoms are thermally stable and are therefore preferred.

[0519] In addition, [3] axylene derivatives, which include electron-withdrawing groups (especially halogens such as fluorine or cyano groups), have very high electron acceptability and are therefore preferred.

[0520] Specifically, α,α',α''-1,2,3-cyclopropanetrimethylenetri[4-cyano-2,3,5,6-tetrafluorophenylacetonitrile], α,α',α''-1,2,3-cyclopropanetrimethylenetri[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenylacetonitrile], and α,α',α''-1,2,3-cyclopropanetrimethylenetri[2,3,4,5,6-pentafluorophenylacetonitrile] can be used.

[0521] In addition, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used as electron-accepting materials.

[0522] In addition, phthalocyanine compounds such as phthalocyanine (abbreviated as: H2Pc); phthalocyanine complex compounds such as copper phthalocyanine (II) (abbreviated as: CuPc); and compounds with aromatic amine skeletons such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as: DPAB) and N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as: DNTPD) can be used.

[0523] Alternatively, polymers such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (PEDOT / PSS) can be used.

[0524] [Structural Example 1 of Composite Materials]

[0525] Alternatively, for example, a composite material containing both electron-receiving and hole-transporting materials can be used for layer 104X. Thus, in addition to materials with a high work function, materials with a low work function can also be used for electrode 551X. Alternatively, regardless of the work function, a material for electrode 551X can be selected from a wide range of materials.

[0526] For example, compounds with aromatic amine skeletons, carbazole derivatives, aromatic hydrocarbons, vinyl aromatic hydrocarbons, and polymers (oligomers, dendritic polymers, polymers, etc.) can be used as hole transport materials in composite materials. Additionally, materials with a hole mobility of 1×10⁻⁶ can be used. -6 cm 2 Materials with a density of / Vs or higher are suitable for use as hole-transporting materials in composite materials. For example, hole-transporting materials suitable for layer 112X can be used as composite materials.

[0527] Furthermore, materials with deep HOMO energy levels can be suitable for use as hole-transporting materials in composite materials. Specifically, the HOMO energy level is preferably above -5.7 eV and below -5.4 eV. This allows for easy hole injection into cell 103X. Additionally, it allows for easy hole injection into layer 112X. Furthermore, it improves the reliability of the light-emitting device 550X.

[0528] As compounds with an aromatic amine skeleton, examples include N,N'-bis(p-tolyl)-N,N'-diphenyl-p-phenylene diamine (DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (DPA3B).

[0529] As carbazole derivatives, for example, 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviated as PCzPCN1), 4,4'-bis(N-carbazole)biphenyl (abbreviated as CBP), 1,3,5-tris[4-(N-carbazole)phenyl]benzene (abbreviated as TCPB), 9-[4-(10-phenyl-9-anthrayl)phenyl]-9H-carbazole (abbreviated as CzPA), 1,4-bis[4-(N-carbazole)phenyl]-2,3,5,6-tetraphenylbenzene, etc.

[0530] As aromatic hydrocarbons, for example, 2-tert-butyl-9,10-bis(2-naphthyl)anthracene (t-BuDNA), 2-tert-butyl-9,10-bis(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (t-BuDBA), 9,10-bis(2-naphthyl)anthracene (DNA), 9,10-diphenylanthracene (DPAnth), 2-tert-butylanthracene (t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (DMNA), 2-tert-butylanthracene, etc., can be used. Butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-bis(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-bis(2-naphthyl)anthracene, 9,9'-bianthracene, 10,10'-diphenyl-9,9'-bianthracene, 10,10'-bis(2-phenylphenyl)-9,9'-bianthracene, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthracene, anthracene, tetraphenylene, rubrogene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, pentaphenyl, halophenyl, etc.

[0531] As aromatic hydrocarbons containing vinyl groups, for example, 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviated as DVBi) and 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviated as DPVPA) can be used.

[0532] As high molecular weight compounds, for example, poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD), etc.

[0533] Additionally, substances having any one of the following backbones—carbazole, dibenzofuran, dibenzothiophene, and anthracene—can be suitable for use as hole-transporting materials in composite materials. Furthermore, substances containing aromatic amines having substituents including a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines including a naphthyl ring, or aromatic monoamines with a 9-fluorene group bonded to the nitrogen of the amine via an arylene group can be used. Note that using substances including N,N-bis(4-biphenyl)amino groups can improve the reliability of the 550X light-emitting device.

[0534] For example, N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviated: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviated: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviated: BnfBB1BP), Named as: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviated as: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviated as: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-benzidine (abbreviated as: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviated as: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviated as: BBAβNBi), 4,4'-diphenyl-4''-(6 ;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl) Triphenylamine (abbreviation: BBAβNαNB), 4,4'-diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-Bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl]tri(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirodi[9H-fluorene]-2-amine (abbreviation: PCB) NBSF), N,N-bis(biphenyl-4-yl)-9,9'-spirodi[9H-fluorene]-2-amine (abbreviated as: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirodi[9H-fluorene]-4-amine (abbreviated as: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi[9H-fluorene]-4-amine (abbreviated as: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviated as: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (Abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluorene-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine ( Abbreviations: PCBANB), 4,4'-bis(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCCNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirodi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBiF), N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-3-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-2-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-1-amine, etc.

[0535] [Structural Example 2 of Composite Materials]

[0536] For example, a composite material containing an electron-receiving material, a hole-transporting material, and an alkali metal fluoride or an alkaline earth metal fluoride can be used as a hole-injecting material. In particular, a composite material with an atomic ratio of fluorine atoms of 20% or more is suitable. Therefore, the refractive index of layer 104X can be reduced. Furthermore, a low-refractive-index layer can be formed inside the light-emitting device 550X. Alternatively, the external quantum efficiency of the light-emitting device 550X can be improved.

[0537] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0538] (Implementation Method 5)

[0539] In this embodiment, refer to Figure 25 The structure of a light-emitting device in a display device that can be used in one aspect of the present invention is described.

[0540] The structure of the light-emitting device 550X described in this embodiment can be used in a display device according to one aspect of the present invention. Furthermore, the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used for the structure of the light-emitting device 550X can be replaced with "A" to describe the light-emitting device 550A. Similarly, "X" can be replaced with "B" or "C" to apply the structure of the light-emitting device 550X to the light-emitting device 550B or the light-emitting device 550C.

[0541] <Structural Example of the 550X Light-Emitting Device>

[0542] The light-emitting device 550X described in this embodiment includes electrode 551X, electrode 552X, unit 103X, and layer 105X (see reference). Figure 25 ).

[0543] Electrode 552X includes a region overlapping with electrode 551X, and unit 103X includes a region sandwiched between electrode 551X and electrode 552X. Additionally, layer 105X includes a region sandwiched between unit 103X and electrode 552X. Note that, for example, the structure described in Embodiment 3 can be used for unit 103X.

[0544] <Structural Example of Electrode 552X>

[0545] For example, conductive materials can be used in electrode 552X. Specifically, materials comprising metals, alloys, or conductive compounds can be used in electrode 552X in a single layer or in a stack.

[0546] For example, the material that can be used for electrode 551X as described in Embodiment 4 can be used for electrode 552X. In particular, a material with a lower work function than electrode 551X can be suitable for use in electrode 552X. Specifically, a material having a work function of 3.8 eV or less is preferred.

[0547] For example, elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing them can be used in electrode 552X.

[0548] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing them (such as magnesium-silver alloys or aluminum-lithium alloys) can be used in electrode 552X.

[0549] <<Example of a 105X Layer Structure>>

[0550] For example, an electron-injectable material can be used for layer 105X. Alternatively, layer 105X can be referred to as an electron-injected layer.

[0551] Specifically, an electron-donating material can be used in layer 105X. Alternatively, a composite material of an electron-donating material and an electron-transporting material can be used in layer 105X. Alternatively, an electron compound can be used in layer 105X. Thus, for example, electrons can be easily injected from electrode 552X. Alternatively, a material with a higher work function can be used in electrode 552X, in addition to materials with a lower work function. Alternatively, materials for electrode 552X can be selected from a wide range of materials regardless of the work function. Specifically, aluminum (Al), silver (Ag), indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, etc., can be used in electrode 552X. Alternatively, the driving voltage of the light-emitting device 550X can be reduced.

[0552] [Electron-donating substances]

[0553] For example, alkali metals, alkaline earth metals, rare earth metals, or their compounds (oxides, halides, carbonates, etc.) can be used as electron-donating substances. Alternatively, organic compounds such as tetrathianaphthacene (TTN), nickel dicene, and decamethylnickel dicene can also be used as electron-donating substances.

[0554] As alkali metal compounds (including oxides, halides, and carbonates), lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, and 8-hydroxyquinoline-lithium (abbreviated as Liq) can be used.

[0555] As an alkaline earth metal compound (including oxides, halides, and carbonates), calcium fluoride (CaF2) and the like can be used.

[0556] [Structural Example 1 of Composite Materials]

[0557] In addition, materials that combine multiple substances can be used as electron-injecting materials. For example, electron-donating and electron-transporting materials can be used in composite materials.

[0558] Electron transport materials

[0559] For example, the following material is suitable for use as an electron transport material: having an electron mobility of 1 × 10⁻⁶ under an electric field strength V / cm square root of 600. -7 cm 2 / Vs or more and 5×10 -5 cm 2 Materials with a value below / Vs can be used. This allows for control of the amount of electrons injected into the emissive layer. Alternatively, it can prevent the emissive layer from becoming overloaded with electrons.

[0560] Metal complexes or organic compounds with π-electron-deficient heteroaromatic ring skeletons can be used in electron transport materials. For example, electron transport materials that can be used in layer 113X can be used in layer 105X.

[0561] [Structural Example 2 of Composite Materials]

[0562] Alternatively, microcrystalline alkali metal fluorides and electron transport materials can be used in composite materials. Or, microcrystalline alkaline earth metal fluorides and electron transport materials can be used in composite materials. In particular, composite materials containing 50 wt% or more alkali metal fluorides or alkaline earth metal fluorides are suitable. Alternatively, composite materials containing organic compounds with a bipyridine framework are suitable. Therefore, the refractive index of the layer can be reduced by 105X. Alternatively, the external quantum efficiency of the light-emitting device can be increased by 550X.

[0563] [Structural Example 3 of Composite Materials]

[0564] For example, a composite material comprising a first organic compound having non-shared electron pairs and a first metal can be used for layer 105X. Furthermore, the sum of the number of electrons in the first organic compound and the first metal is preferably an odd number. Additionally, the molar ratio of the first metal to 1 mole of the first organic compound is preferably 0.1 or more and 10 or less, more preferably 0.2 or more and 2 or less, and even more preferably 0.2 or more and 0.8 or less.

[0565] Thus, the first organic compound with non-shared electron pairs can interact with the first metal to form a single-occupied molecular orbital (SOMO). Furthermore, injecting electrons from electrode 552X into layer 105X can reduce the potential barrier between them.

[0566] Alternatively, a composite material can be used in layer 105X, wherein the spin density, as measured by electron spin resonance (ESR), is preferably 1 × 10⁻⁶. 16 spins / cm 3 The above is preferred, with 5×10 being more ideal. 16 spins / cm 3 The above is further preferred to be 1×10 17 spins / cm 3 above.

[0567] [Organic compounds with non-shared electron pairs]

[0568] For example, electron transport materials can be used in organic compounds with non-shared electron pairs. For instance, compounds with electron-deficient heteroaromatic rings can be used. Specifically, compounds having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used. This allows for a reduction in the driving voltage of the 550X light-emitting device.

[0569] Furthermore, the LUMO energy level of organic compounds with non-shared electron pairs is preferably above -3.6 eV and below -2.3 eV. Generally, cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy can be used to estimate the HOMO and LUMO energy levels of organic compounds.

[0570] For example, as organic compounds with non-shared electron pairs, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxolino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz), and 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P) can be used. Furthermore, compared to BPhen, NBPhen has a higher glass transition temperature (Tg), thus exhibiting higher heat resistance.

[0571] Alternatively, copper phthalocyanine can be used, for example, as an organic compound with non-shared electron pairs. Copper phthalocyanine has an odd number of electrons.

[0572] [First Metal]

[0573] For example, when the number of electrons in the first organic compound having non-shared electron pairs is even, a composite material of a metal belonging to an odd group in the periodic table and the first organic compound can be used for layer 105X.

[0574] For example, manganese (Mn) from Group 7, cobalt (Co) from Group 9, copper (Cu), silver (Ag), and gold (Au) from Group 11, and aluminum (Al) and indium (In) from Group 13 all belong to odd-numbered groups in the periodic table. Furthermore, compared to Group 7 or Group 9 elements, Group 11 elements have lower melting points, making them suitable for vacuum evaporation. In particular, Ag has a low melting point, making it a preferred choice. Additionally, by using a metal with low reactivity with water or oxygen as the first metal, the moisture resistance of the 550X light-emitting device can be improved.

[0575] By using Ag in electrode 552X and layer 105X, the adhesion between layer 105X and electrode 552X can be improved.

[0576] Furthermore, when the number of electrons in the first organic compound having non-shared electron pairs is odd, a composite material of the first metal and the first organic compound belonging to an even group in the periodic table can be used for layer 105X. For example, iron (Fe), a Group 8 metal, belongs to an even group in the periodic table.

[0577] [Electronic Compounds]

[0578] For example, a mixture of calcium and aluminum oxides with high concentrations of added electrons can be used in electron-injecting materials.

[0579] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0580] (Implementation Method 6)

[0581] In this embodiment, refer to Figure 26A The structure of a light-emitting device in a display device that can be used in one aspect of the present invention is described.

[0582] Figure 26A This is a cross-sectional view illustrating the structure of a light-emitting device according to one aspect of the present invention.

[0583] The structure of the light-emitting device 550X described in this embodiment can be used in a display device according to one aspect of the present invention. Furthermore, the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used for the structure of the light-emitting device 550X can be replaced with "A" to describe the light-emitting device 550A. Similarly, "X" can be replaced with "B" or "C" to apply the structure of the light-emitting device 550X to the light-emitting device 550B or the light-emitting device 550C.

[0584] <Structural Example of the 550X Light-Emitting Device>

[0585] The light-emitting device 550X described in this embodiment includes electrode 551X, electrode 552X, unit 103X, and intermediate layer 106X (see reference). Figure 26A ).

[0586] Electrode 552X includes a region overlapping with electrode 551X, and unit 103X includes a region sandwiched between electrode 551X and electrode 552X. Intermediate layer 106X includes a region sandwiched between electrode 552X and unit 103X.

[0587] <<Example 1 of the 106X intermediate layer structure>>

[0588] The intermediate layer 106X has the function of supplying electrons to the anode side and holes to the cathode side by applying a voltage. Alternatively, the intermediate layer 106X can be referred to as a charge-generating layer.

[0589] For example, a hole-injecting material that can be used in layer 104X as described in Embodiment 4 can be used in intermediate layer 106X. Specifically, an electron-receiving material or a composite material can be used in intermediate layer 106X.

[0590] For example, a laminated membrane comprising a membrane containing the composite material and a membrane containing a hole transport material can be used as the intermediate layer 106X. Note that the membrane containing the hole transport material is sandwiched between the membrane containing the composite material and the cathode.

[0591] <<Example 2 of the 106X intermediate layer structure>>

[0592] The laminated film of layers 106X1 and 106X2 can be used as the intermediate layer 106X. Layer 106X1 includes a region sandwiched between cell 103X and electrode 552X, and layer 106X2 includes a region sandwiched between cell 103X and layer 106X1.

[0593] <<Example of a 106x1 layer structure>>

[0594] For example, a hole-injecting material that can be used in layer 104X as described in Embodiment 4 can be used in layer 106X1. Specifically, an electron-receiving material or a composite material can be used in layer 106X1. Additionally, a material with a 1×10⁻⁶ diameter can be used. 4 Ω･cm or more and 1×10 7 A film with a resistivity of less than Ω·cm is used for layer 106X1. Layer 106X1 preferably has a resistivity of 5×10⁻⁶. 4 Ω･cm or more and 1×10 7 A resistivity of less than Ω·cm, more preferably 1×10⁻⁶. 5 Ω･cm or more and 1×10 7 Resistivity below Ω·cm.

[0595] <<Example of a 106x2 layer structure>>

[0596] For example, the material that can be used for layer 105X as described in embodiment 5 can be used for layer 106X2.

[0597] <<Example 3 of the 106X intermediate layer structure>>

[0598] A laminated film consisting of layers 106X1, 106X2, and 106X3 can be used as the intermediate layer 106X. Layer 106X3 includes a region sandwiched between layers 106X1 and 106X2.

[0599] <<Example of a 106x3 layer structure>>

[0600] For example, an electron transport material can be used for layer 106X3. Layer 106X3 can also be referred to as an electron relay layer. By using layer 106X3, the layer on the anode side of layer 106X3 can be moved away from the layer on the cathode side of layer 106X3. Furthermore, the interaction between the layer on the anode side of layer 106X3 and the layer on the cathode side of layer 106X3 can be reduced. Therefore, electrons can be smoothly supplied to the layer on the anode side of layer 106X3.

[0601] The following substances are suitable for use in layer 106X3: substances whose LUMO level is located between the LUMO level of the electron-accepting substance in layer 106X1 and the LUMO level of the substance in layer 106X2.

[0602] For example, materials with LUMO energy levels in the range of -5.0 eV or higher, preferably between -5.0 eV and -3.0 eV, can be used for layer 106X3.

[0603] Specifically, phthalocyanine materials can be used for layer 106X3. For example, phthalocyanine (H2Pc), copper phthalocyanine (II) (CuPc), zinc phthalocyanine (ZnPc), or metal complexes with metal-oxygen bonds and aromatic ligands can be used for layer 106X3.

[0604] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0605] (Implementation Method 7)

[0606] In this embodiment, refer to Figure 26B The structure of the light-emitting device 550X of a display device that can be used in one aspect of the present invention is described.

[0607] Figure 26B This is a cross-sectional view illustrating the structure of a light-emitting device according to one embodiment of the present invention, the light-emitting device having... Figure 26A The structures shown are different.

[0608] The structure of the light-emitting device 550X described in this embodiment can be used in a display device according to one aspect of the present invention. Furthermore, the description of the structure of the light-emitting device 550X can be applied to the light-emitting device 550A. Specifically, the symbol "X" used for the structure of the light-emitting device 550X can be replaced with "A" to describe the light-emitting device 550A. Similarly, "X" can be replaced with "B" or "C" to apply the structure of the light-emitting device 550X to the light-emitting device 550B or the light-emitting device 550C.

[0609] <Structural Example of the 550X Light-Emitting Device>

[0610] The light-emitting device 550X described in this embodiment includes electrode 551X, electrode 552X, unit 103X, intermediate layer 106X, and unit 103X2 (see reference). Figure 26B ).

[0611] Unit 103X is sandwiched between electrode 552X and electrode 551X, and intermediate layer 106X is sandwiched between electrode 552X and unit 103X.

[0612] Unit 103X2 is sandwiched between electrode 552X and intermediate layer 106X. Note that unit 103X2 has the function of emitting light ELX2.

[0613] In other words, the light-emitting device 550X includes multiple units stacked between electrodes 551X and 552X. Furthermore, the number of stacked units is not limited to two, and can be three or more. Sometimes, the structure including multiple units sandwiched between electrodes 551X and 552X and an intermediate layer 106X sandwiched between the multiple units is referred to as a stacked light-emitting device or a series-type light-emitting device.

[0614] Therefore, high brightness emission can be achieved while maintaining low current density. Furthermore, reliability can be improved. Additionally, the driving voltage can be reduced when comparing at the same brightness. Furthermore, power consumption can be suppressed.

[0615] <<Structure Example 1 of Unit 103X2>>

[0616] Unit 103X2 has a single-layer structure or a stacked structure. For example, unit 103X2 includes layers 111X2, 112X2, and 113X2. Note that unit 103X2 has the function of emitting light ELX2.

[0617] Layer 111X2 is sandwiched between layer 112X2 and layer 113X2, layer 113X2 is sandwiched between electrode 552X and layer 111X2, and layer 112X2 is sandwiched between layer 111X2 and intermediate layer 106X.

[0618] The structure that can be used for element 103X can also be used for element 103X2. Specifically, the symbol "X" for the structure used for element 103X can be replaced with "X2" and applied to the description of element 103X2. For example, the same structure as element 103X can be used for element 103X2.

[0619] <<Structure Example 2 of Unit 103X2>>

[0620] A structure different from that of unit 103X can be used for unit 103X2. For example, a structure that emits light with a hue different from that of unit 103X can be used for unit 103X2.

[0621] Specifically, units 103X that emit red and green light and units 103X2 that emit blue light can be stacked together. This provides a light-emitting device that emits light of a desired color. For example, a light-emitting device that emits white light can be provided.

[0622] <<Structure Example of 106X Intermediate Layer>>

[0623] The intermediate layer 106X has the function of supplying electrons to one of the cells 103X and 103X2 and supplying holes to the other. For example, the intermediate layer 106X described in Embodiment 6 can be used.

[0624] <Manufacturing Method of 550X Light-Emitting Device>

[0625] For example, the layers 551X, 552X, 103X, intermediate layer 106X, and 103X2 can be formed by dry methods, wet methods, vapor deposition, droplet spraying, coating, or printing. Furthermore, the constituent elements can be formed using different methods.

[0626] Specifically, 550X light-emitting devices can be manufactured using coating equipment such as vacuum evaporation equipment, inkjet equipment, spin coater, gravure printing equipment, offset printing equipment, and screen printing equipment.

[0627] Electrodes can be formed, for example, using a wet process or a sol-gel process with a paste of metallic materials. Alternatively, an indium oxide-zinc oxide film can be formed by sputtering using a target containing 1 wt% to 20 wt% zinc oxide relative to indium oxide. Furthermore, an indium oxide (IWZO) film containing tungsten oxide and zinc oxide can be formed by sputtering using a target containing 0.5 wt% to 5 wt% tungsten oxide and 0.1 wt% to 1 wt% zinc oxide relative to indium oxide.

[0628] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0629] (Implementation Method 8)

[0630] In this embodiment, refer to Figure 27 and... Figure 28 This invention describes a display device according to one aspect of the present invention.

[0631] Figure 27A This is a front view of a display device according to one aspect of the present invention. Figure 27B This is an explanation Figure 27A A partial front view. Additionally... Figure 27C It is along Figure 27A The cross-sectional views of cut-off lines X1-X2, cut-off lines X3-X4, a group of pixels 703 (i, j), and cut-off lines X5-X6 are shown.

[0632] Figure 28 This is a circuit diagram illustrating the structure of a display device according to one aspect of the present invention.

[0633] Note that in this specification, variables with integer values ​​greater than 1 are sometimes used as symbols. For example, sometimes (p) of a variable p containing integer values ​​greater than 1 is used as part of the symbol for any one of the maximum number of components. Additionally, for example, sometimes (m, n) of variables m and n containing integer values ​​greater than 1 is used as part of the symbol for any one of the maximum number of components.

[0634] <Example 1 of the structure of display device 700>

[0635] One aspect of the present invention, a display device 700, includes a layer 521, an insulating layer 573, and a set of pixels 703 (i, j) (see reference 1). Figure 27C ).

[0636] Layer 521 has an overlapping region that overlaps with insulating layer 573. In other words, layer 521 overlaps with insulating layer 573 in the overlapping region.

[0637] The overlapping area includes a display area 731 and a sealing area 732. Furthermore, the sealing area 732 surrounds the display area 731 (see reference). Figure 27B ).

[0638] <<Example of the structure of display area 731>>

[0639] Display area 731 includes a group of pixels 703 (i, j). This group of pixels 703 (i, j) includes pixels 702A (i, j), 702B (i, j), and 702C (i, j) (see reference). Figure 27B and Figure 27C ).

[0640] Pixel 702A(i,j) includes pixel circuit 530A(i,j) and light-emitting device 550A (refer to...) Figure 27C The light-emitting device 550A is electrically connected to the pixel circuit 530A (i, j).

[0641] Additionally, pixel 702B(i,j) includes pixel circuit 530B(i,j) and light-emitting device 550B. Light-emitting device 550B is electrically connected to pixel circuit 530B(i,j). Similarly, pixel 702C(i,j) includes light-emitting device 550C (see reference). Figure 27B ).

[0642] The light-emitting device 550A is sandwiched between layer 521 and insulating layer 573 (see reference). Figure 27C ).

[0643] <<Example of a Layer 521 Structure>>

[0644] For example, a film containing silicon, nitrogen, or oxygen can be used as layer 521.

[0645] <<Structural Examples of Insulating Layer 573>>

[0646] For example, a film containing silicon and nitrogen can be used as the insulating layer 573. Furthermore, for example, the insulating layer 573 contacts the layer 521 in the sealing region 732.

[0647] Furthermore, when a film containing silicon and nitrogen is used as the insulating layer 573, the thickness of the insulating layer 573 is 5 nm or more and 50 nm or less, preferably 5 nm or more and 30 nm or less, and more preferably 5 nm or more and 20 nm or less. For example, the insulating layer 573 can be formed using the PEALD method.

[0648] Thus, light-emitting device 550A is sandwiched between layer 521 and insulating layer 573. Additionally, light-emitting device 550B is sandwiched between layer 521 and insulating layer 573. Furthermore, the diffusion of impurities that degrade the operating characteristics of light-emitting device 550A from the outside of the display device into the interior can be suppressed. Furthermore, insulating layer 573 can be formed at a temperature lower than that of the ALD method. Furthermore, the damage to the characteristics of light-emitting devices 550A and 550B during the manufacturing process can be suppressed. Additionally, the display device can be made flexible. As a result, a novel display device with good convenience, practicality, and reliability can be provided.

[0649] <Structure Example 2 of Display Device 700>

[0650] Additionally, one embodiment of the display device 700 of the present invention includes a functional layer 540 and a functional layer 520 (see reference 540). Figure 27C Functional layer 540 overlaps with functional layer 520.

[0651] Functional layer 540 includes light-emitting device 550A.

[0652] Functional layer 520 includes pixel circuits 530A (i, j) and wiring (see reference). Figure 27C Pixel circuits 530A (i, j) are electrically connected to wiring. For example, a conductive film disposed in the opening 591A of functional layer 520 can be used as wiring, which electrically connects terminal 519B and pixel circuits 530A (i, j). Conductive material CP electrically connects terminal 519B and flexible printed substrate FPC1. Alternatively, for example, a conductive film disposed in the opening 591B of functional layer 520 can be used as wiring.

[0653] <Example 3 of the structure of display device 700>

[0654] Additionally, one embodiment of the display device 700 of the present invention includes a driving circuit GD and a driving circuit SD (see reference). Figure 27A ).

[0655] <<Structure Example of GD Driver Circuit>>

[0656] The drive circuit GD supplies the first selection signal and the second selection signal.

[0657] <<Example of the structure of a driver circuit SD>>

[0658] The drive circuit SD supplies the first control signal and the second control signal.

[0659] <<Examples of Wiring Structures>>

[0660] The wiring includes conductive film G1(i), conductive film G2(i), conductive film S1(j), conductive film S2(j), conductive film ANO, conductive film VCOM2, and conductive film V0 (refer to...). Figure 28 ).

[0661] The conductive film G1(i) is supplied with a first selection signal, and the conductive film G2(i) is supplied with a second selection signal.

[0662] The conductive film S1(j) is supplied with a first control signal, and the conductive film S2(j) is supplied with a second control signal.

[0663] <<Example 1 of the structure of pixel circuit 530A(i,j)>>

[0664] Pixel circuit 530A(i,j) is electrically connected to conductive film G1(i) and conductive film S1(j). Conductive film G1(i) supplies a first selection signal, and conductive film S1(j) supplies a first control signal.

[0665] Pixel circuit 530A(i, j) drives light-emitting device 550A according to first selection signal and first control signal. In addition, light-emitting device 550A emits light.

[0666] One electrode of the light-emitting device 550A is electrically connected to the pixel circuit 530A (i, j), and the other electrode is electrically connected to the conductive film VCOM2.

[0667] <<Example 2 of the structure of pixel circuit 530A(i,j)>>

[0668] The pixel circuit 530A(i,j) includes switch SW21, switch SW22, transistor M21, capacitor C21 and node N21.

[0669] Transistor M21 includes a gate electrode electrically connected to node N21, a first electrode electrically connected to light-emitting device 550A, and a second electrode electrically connected to conductive film ANO.

[0670] The switch SW21 includes a first terminal electrically connected to node N21, a second terminal electrically connected to conductive film S1(j), and a gate electrode having the function of controlling the on state or the off state according to the potential of conductive film G1(i).

[0671] The switch SW22 includes a first terminal electrically connected to the conductive film S2(j) and a gate electrode having the function of controlling the on state or the off state according to the potential of the conductive film G2(i).

[0672] Capacitor C21 includes a conductive film electrically connected to node N21 and a conductive film electrically connected to the second electrode of switch SW22.

[0673] Therefore, the image signal can be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Alternatively, the intensity of the light emitted by the light-emitting device 550A can be controlled using the potential of node N21. As a result, a novel device with good convenience, practicality, and reliability can be provided.

[0674] <<Example 3 of the structure of pixel circuit 530A(i,j)>>

[0675] The pixel circuit 530A(i,j) includes a switch SW23, a node N22, and a capacitor C22.

[0676] The switch SW23 includes a first terminal electrically connected to the conductive film V0, a ​​second terminal electrically connected to the node N22, and a gate electrode having the function of controlling the on state or the off state according to the potential of the conductive film G2(i).

[0677] Capacitor C22 includes a conductive film electrically connected to node N21 and a conductive film electrically connected to node N22.

[0678] Note that the first electrode of transistor M21 is electrically connected to node N22.

[0679] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0680] (Implementation Method 9)

[0681] In this embodiment, a display module according to one aspect of the present invention is described.

[0682] <Display Module>

[0683] Figure 29 This is a 3D diagram illustrating the structure of the display module 280.

[0684] Display module 280 includes display device 100 and FPC 290 or connector. Display device 100 includes display area 80. For example, the display device described in Embodiment 1 can be used for display device 100.

[0685] The FPC290 supplies signals and power to the display device 100 from an external source. Alternatively, an IC can be mounted on the FPC290. A connector is a mechanical component used to electrically connect conductors, allowing the display device 100 to be electrically connected to the component being connected. For example, the FPC290 can be used as a conductor. Additionally, a connector allows the display device 100 to be detached from the component being connected.

[0686] <<Display Device 100A>>

[0687] Figure 30A This is a cross-sectional view illustrating the structure of the display device 100A. For example, the display device 100A can be used as the display module 280. The substrate 301 corresponds to... Figure 29 Substrate 71 in the middle.

[0688] The display device 100A includes a substrate 301, a transistor 310, a component separation layer 315, an insulating layer 261, a capacitor 240, insulating layers 255a and 255b, a light-emitting device 61R, a light-emitting device 61G, and a light-emitting device 61B. The insulating layer 261 is disposed on the substrate 301A, and the transistor 310 is located between the substrate 301 and the insulating layer 261. The insulating layer 255a is disposed on the insulating layer 261, and the capacitor 240 is located between the insulating layer 261 and the insulating layer 255a. The insulating layer 255a is also located between the light-emitting device 61R and the capacitor 240, the light-emitting device 61G and the capacitor 240, and the light-emitting device 61B and the capacitor 240.

[0689] [Transistor 310]

[0690] Transistor 310 includes a conductive layer 311, a pair of low-resistance regions 312, an insulating layer 313, and an insulating layer 314, with its channel formed in a portion of substrate 301. The conductive layer 311 serves as the gate electrode. The insulating layer 313 is located between substrate 301 and the conductive layer 311 and serves as the gate insulating layer. Substrate 301 has a pair of low-resistance regions 312 doped with impurities. These regions serve as the source and drain. The sides of the conductive layer 311 are covered by the insulating layer 314.

[0691] The component separation layer 315 is embedded in the substrate 301 and located between two adjacent transistors 310.

[0692] [Capacitor 240]

[0693] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243, with the insulating layer 243 located between the conductive layers 241 and 245. The conductive layer 241 serves as one electrode of the capacitor 240, the conductive layer 245 serves as the other electrode of the capacitor 240, and the insulating layer 243 serves as the dielectric of the capacitor 240.

[0694] Conductive layer 241 is located on insulating layer 261 and embedded in insulating layer 254. Conductive layer 241 is electrically connected to one of the source and drain terminals of transistor 310 via a connector 275 embedded in insulating layer 261. Insulating layer 243 covers conductive layer 241. Conductive layer 245 overlaps conductive layer 241 through insulating layer 243.

[0695] [Insulating film 255a, insulating layer 255b and insulating layer 255c]

[0696] The display device 100A includes an insulating layer 255a, an insulating layer 255b and an insulating layer 255c, with the insulating layer 255b located between the insulating layers 255a and 255c.

[0697] [Light-emitting device 61R, light-emitting device 61G, light-emitting device 61B]

[0698] Light-emitting devices 61R, 61G, and 61B are disposed on insulating layer 255c. For example, the light-emitting devices described in embodiments 3 to 7 can be used for light-emitting devices 61R, 61G, and 61B. Light-emitting device 61R emits light 81R, light-emitting device 61G emits light 81G, and light-emitting device 61B emits light 81B. Additionally, the light-emitting devices include a common layer 174.

[0699] Light-emitting device 61R includes a conductive layer 171 and an EL layer 172R, with the EL layer 172R covering the top and side surfaces of the conductive layer 171. Additionally, sacrificial layer 270 includes sacrificial layers 270R, 270G, and 270B. Sacrificial layer 270R is located on the EL layer 172R. Light-emitting device 61G includes a conductive layer 171 and an EL layer 172G, with the EL layer 172G covering the top and side surfaces of the conductive layer 171. Additionally, sacrificial layer 270G is located on the EL layer 172G. Light-emitting device 61B includes a conductive layer 171 and an EL layer 172B, with the EL layer 172B covering the top and side surfaces of the conductive layer 171. Additionally, sacrificial layer 270B is located on the EL layer 172B.

[0700] Conductive layer 171 is electrically connected to one of the source and drain terminals of transistor 310 via plug 256 embedded in insulating layers 243, 255a, 255b, and 255c, conductive layer 241 embedded in insulating layer 254, and plug 275 embedded in insulating layer 261. The height of the top surface of insulating layer 255c is the same as or approximately the same as the height of the top surface of plug 256. Various conductive materials can be used for the plug.

[0701] [Protective layer 271, Protective layer 273, Adhesive layer 122]

[0702] The protective layer 271 is located between adjacent light-emitting devices, for example, between light-emitting device 61R and light-emitting device 61G. In addition, the protective layer 273 is provided on light-emitting device 61R, light-emitting device 61G and light-emitting device 61B.

[0703] The adhesive layer 122 bonds the protective layer 273 and the substrate 120 together.

[0704] [Substrate 120]

[0705] Substrate 120 is equivalent to Figure 29 The substrate 73 is located in the substrate 120. For example, a light-shielding layer can be disposed on the side of the adhesive layer 122 of the substrate 120. In addition, various optical components can be disposed on the outer side of the substrate 120.

[0706] The thin film can be used as a substrate. In particular, a thin film with low water absorption can be used. For example, the water absorption rate is preferably 1% or less, more preferably 0.1% or less. This can suppress dimensional changes in the thin film. In addition, the formation of wrinkles and the like can be suppressed. Furthermore, shape changes in the display device can be suppressed.

[0707] For example, polarizers, phase retardation plates, light diffusion layers (e.g., diffusion films), anti-reflection layers, and condensing films can be used as optical components.

[0708] A circular polarizer can be superimposed on the display device using a substrate made of a material with high optical isotropy, i.e., a material with a phase retardation value of 30 nm or less, preferably 20 nm or less, and more preferably 10 nm or less. For example, cellulose triacetate (TAC, also known as cellulose triacetate) films, cyclic olefin polymer (COP) films, cyclic olefin copolymer (COC) films, and acrylic resin films can be used as films with high optical isotropy.

[0709] Additionally, surface protective layers such as an antistatic film to inhibit dust adhesion, a water-repellent film to prevent dirt accumulation, a hard coating to inhibit damage during use, and an impact-absorbing layer can also be disposed on the outer side of the substrate 120. For example, a glass layer or a silicon dioxide layer (SiO2) can be used. x Layers), DLC (diamond-like carbon), aluminum oxide (AlO) x Materials such as polyesters or polycarbonates can be used for surface protective layers. Additionally, materials with high visible light transmittance are suitable for surface protective layers. Furthermore, materials with high hardness are also suitable for surface protective layers.

[0710] <<Display Device 100B>>

[0711] Figure 30B This is a cross-sectional view illustrating the structure of the display device 100B. The display device 100B can, for example, be used in the display module 280 (see reference 100). Figure 29 ).

[0712] The display device 100B includes a substrate 301, a light-emitting device 61W, a capacitor 240, and a transistor 310. The light-emitting device 61W can, for example, emit white light.

[0713] Additionally, the display device 100B includes a coloring layer 183R, a coloring layer 183G, and a coloring layer 183B. Coloring layer 183R overlaps with one light-emitting device 61W, coloring layer 183G overlaps with another light-emitting device 61W, and coloring layer 183B has an area overlapping with another light-emitting device 61W. Furthermore, the display device 100B has a gap 276 between the light-emitting device and the coloring layer.

[0714] For example, color layer 183R can transmit red light, color layer 183G can transmit green light, and color layer 183B can transmit blue light.

[0715] <<Display Device 100C>>

[0716] Figure 31 This is a cross-sectional view illustrating the structure of the display device 100C. The display device 100C can, for example, be used in the display module 280 (see reference 100). Figure 29 Note that in the following description of the display device, parts that are the same as those described previously are sometimes omitted.

[0717] The display device 100C includes a substrate 301B and a substrate 301A. The display device 100C includes a transistor 310B, a capacitor 240, a light-emitting device 61R, a light-emitting device 61G, a light-emitting device 61B, and a transistor 310A. The channel of transistor 310A is formed in a portion of substrate 301A, and the channel of transistor 310B is formed in a portion of substrate 301B.

[0718] [Insulation layer 345, Insulation layer 346]

[0719] Insulating layer 345 is in contact with the bottom surface of substrate 301B, and insulating layer 346 is located on insulating layer 261. For example, an inorganic insulating film that can be used for protective layer 273 can be used as insulating layer 345 and insulating layer 346. Insulating layer 345 and insulating layer 346 are used as protective layers and can suppress the diffusion of impurities to substrate 301B and substrate 301A.

[0720] [Plug 343]

[0721] The plug 343 passes through the substrate 301B and the insulating layer 345. The insulating layer 344 covers the sides of the plug 343. For example, an inorganic insulating film that can be used for the protective layer 273 can be used for the insulating layer 344. The insulating layer 344 serves as a protective layer and can inhibit the diffusion of impurities into the substrate 301B.

[0722] [Conductive layer 342]

[0723] The conductive layer 342 is located between the insulating layers 345 and 346. Preferably, the conductive layer 342 is embedded within the insulating layer 335, and the surface formed by the conductive layer 342 and the insulating layer 335 is planarized. The conductive layer 342 is electrically connected to the plug 343.

[0724] [Conductive layer 341]

[0725] The conductive layer 341 is located between the insulating layer 346 and the insulating layer 335. Preferably, the conductive layer 341 is embedded within the insulating layer 336, and the surface formed by the conductive layer 341 and the insulating layer 336 is planarized. The conductive layer 341 is bonded to the conductive layer 342. Thus, substrate 301A and substrate 301B are electrically connected.

[0726] The conductive layer 341 is preferably made of the same conductive material as the conductive layer 342. For example, a metal film containing elements selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (e.g., titanium nitride film, molybdenum nitride film, or tungsten nitride film) composed of the above elements can be used. Copper is particularly preferred as both the conductive layer 341 and the conductive layer 342. This allows for the use of Cu-Cu (copper-copper) direct bonding technology (a technology that enables electrical conduction by connecting Cu (copper) pads to each other).

[0727] <<Display Device 100D>>

[0728] Figure 32 This is a cross-sectional view illustrating the structure of the display device 100D. The display device 100D can, for example, be used in the display module 280 (see reference 100). Figure 29 ).

[0729] The display device 100D has bumps 347 that bond conductive layers 341 and 342. Furthermore, the bumps 347 electrically connect conductive layers 341 and 342. For example, conductive materials including gold (Au), nickel (Ni), indium (In), or tin (Sn) can be used for the bumps 347. Alternatively, solder can be used for the bumps 347, for example.

[0730] Additionally, the display device 100D includes an adhesive layer 348. The adhesive layer 348 bonds the insulating layer 345 and the insulating layer 346 together.

[0731] <<Display Device 100E>>

[0732] Figure 33 This is a cross-sectional view illustrating the structure of the display device 100E. The display device 100E can, for example, be used in the display module 280 (see reference 100). Figure 29 Substrate 331 is equivalent to Figure 29 Substrate 71. An insulating substrate or a semiconductor substrate may be used for substrate 331. Display device 100E includes transistor 320. The transistor structure of display device 100E is an OS transistor, which differs from display device 100A.

[0733] [Insulation layer 332]

[0734] An insulating layer 332 is disposed on the substrate 331. For example, a film that makes it less susceptible to hydrogen or oxygen diffusion compared to a silicon oxide film can be used for the insulating layer 332. Specifically, an aluminum oxide film, a hafnium oxide film, or a silicon nitride film can be used for the insulating layer 332. Thus, the insulating layer 332 can prevent impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320. In addition, it can prevent oxygen from escaping from the semiconductor layer 321 to the insulating layer 332 side.

[0735] [Transistor 320]

[0736] Transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0737] A conductive layer 327 is disposed on the insulating layer 332 and serves as the first gate electrode of the transistor 320. An insulating layer 326 covers the conductive layer 327. A portion of the insulating layer 326 serves as the first gate insulating layer. The insulating layer 326 includes an oxide insulating film at least in the region in contact with the semiconductor layer 321. Specifically, a silicon oxide film or the like is preferably used. Additionally, the insulating layer 326 has a planarized top surface. A semiconductor layer 321 is disposed on the insulating layer 326. A metal oxide film with semiconductor properties can be used for the semiconductor layer 321. A pair of conductive layers 325 contact the semiconductor layer 321 and serve as the source and drain electrodes.

[0738] [Insulation layer 328, Insulation layer 264]

[0739] An insulating layer 328 covers the top and side surfaces of a pair of conductive layers 325 and the side surface of the semiconductor layer 321. An insulating layer 264 is disposed on the insulating layer 328 and serves as an interlayer insulating layer. Furthermore, both the insulating layers 328 and 264 have openings that extend to the semiconductor layer 321. For example, the same insulating film as the insulating layer 332 can be used as the insulating layer 328. Thus, the insulating layer 328 can, for example, prevent impurities such as water or hydrogen from diffusing from the insulating layer 264 to the semiconductor layer 321. Additionally, it can prevent oxygen from detaching from the semiconductor layer 321.

[0740] [Insulation layer 323]

[0741] The insulating layer 323 is in contact with the sides of the insulating layer 264, the insulating layer 328 and the conductive layer 325 and the top surface of the semiconductor layer 321 inside the opening.

[0742] [Conductive layer 324]

[0743] The conductive layer 324 is embedded inside the opening in a manner that contacts the insulating layer 323. The conductive layer 324 has a planarized top surface, the height of which is the same as or substantially the same as the top surface of the insulating layer 323 and the top surface of the insulating layer 264. The conductive layer 324 is used as the second gate electrode, and the insulating layer 323 is used as the second gate insulating layer.

[0744] [Insulation layer 329, Insulation layer 265]

[0745] Insulating layer 329 covers conductive layer 324, insulating layer 323, and insulating layer 264. Insulating layer 265 is disposed on insulating layer 329 and serves as an interlayer insulating layer. For example, the same insulating film as insulating layer 328 and insulating layer 332 can be used as insulating layer 329. This prevents impurities such as water or hydrogen from diffusing from insulating layer 265 to transistor 320.

[0746] [Plug 274]

[0747] The plug 274 is embedded in insulating layers 265, 329, 264, and 328 and is electrically connected to one of a pair of conductive layers 325. The plug 274 includes conductive layers 274a and 274b. Conductive layer 274a contacts the side surfaces of openings in insulating layers 265, 329, 264, and 328. It also covers a portion of the top surface of conductive layer 325. Conductive layer 274b contacts the top surface of conductive layer 274a. For example, a conductive material that does not readily diffuse with hydrogen and oxygen can be suitable for conductive layer 274a.

[0748] <<Display Device 100F>>

[0749] Figure 34 This is a cross-sectional view illustrating the structure of the display device 100F. The display device 100F has a structure in which transistors 320A and 320B are stacked. Both transistors 320A and 320B contain oxide semiconductors, and their channels are formed in the oxide semiconductors. Note that the structure is not limited to two stacked transistors; for example, a structure with three or more stacked transistors can also be used.

[0750] The structure of transistor 320A and its vicinity is the same as that of transistor 320 and its vicinity in the display device 100E described above. The structure of transistor 320B and its vicinity is the same as that of transistor 320 and its vicinity in the display device 100E described above.

[0751] <<Display Device 100G>>

[0752] Figure 35 This is a cross-sectional view illustrating the structure of the display device 100G. The display device 100G has a structure in which transistors 310 and 320 are stacked. The channel of transistor 310 is formed in substrate 301. In addition, transistor 320 comprises metal oxide, and its channel is formed in the oxide semiconductor.

[0753] An insulating layer 261 covers the transistor 310, and a conductive layer 251 is disposed on the insulating layer 261. An insulating layer 262 covers the conductive layer 251, and a conductive layer 252 is disposed on the insulating layer 262. Additionally, insulating layers 263 and 332 cover the conductive layer 252. Furthermore, both conductive layers 251 and 252 are used for wiring.

[0754] Transistor 320 is disposed on insulating layer 332, and insulating layer 265 covers transistor 320. In addition, capacitor 240 is disposed on insulating layer 265, and capacitor 240 is electrically connected to transistor 320 via connector 274.

[0755] For example, transistor 320 can be used as a transistor constituting a pixel circuit. Similarly, transistor 310 can be used as a transistor constituting a pixel circuit or as a driving circuit (gate driver circuit or source driver circuit, etc.) to drive the pixel circuit. Furthermore, transistors 310 and 320 can be used in various circuits such as arithmetic circuits or memory circuits. Thus, for example, a driving circuit can be configured directly under the light-emitting device in addition to the pixel circuit. Furthermore, compared to a structure where the driving circuit is placed near the display area, the display device can be further miniaturized.

[0756] <<Display Device 100N>>

[0757] Figure 36 This is a cross-sectional view illustrating the structure of the display device 100N.

[0758] In the display device 100N, pixel circuits, driving circuits, etc., are disposed on the substrate 410. Figure 36 In the display device 100N, in addition to component layers 620, 630, and 660, a wiring layer 670 is also shown. The wiring layer 670 is a layer on which wiring is provided. The sacrificial layer 618a is a part of the sacrificial layer provided on the light-emitting layer.

[0759] In component layer 630, pixel circuitry for the display device is preferably provided. In component layer 620, driving circuitry for the display device (one or both of gate driver and source driver) is preferably provided. Furthermore, component layer 620 may also include one or more types of circuitry such as arithmetic circuitry and memory circuitry.

[0760] As an example, the element layer 620 includes a substrate 410 on which a transistor 400d is formed. Furthermore, a wiring layer 670 is disposed above the transistor 400d, and the wiring layer 670 contains a connection layer that allows the transistor 400d to connect with a conductive layer or transistor disposed in the element layer 630. Figure 36 The conductive layer 514 in the middle is electrically connected to the wiring. Furthermore, above the wiring layer 670 are component layers 630 and 660, where component layer 630 includes, for example, a transistor MTCK. Component layer 660 includes a light-emitting element 650 (…). Figure 36Examples of light-emitting elements include 650R, 650G, and 650B. Note that in a MTCK transistor, the source and drain electrodes are located at different heights, and the current flowing through the semiconductor layer flows in the vertical direction. In other words, the channel length direction can be said to have a vertical component. Therefore, a MTCK transistor can also be called a VFET (Vertical Field-Effect Transistor), a vertical transistor, a vertical channel transistor, or a vertical channel type transistor. By using a vertical transistor in a MTCK, transistor miniaturization can be achieved. Therefore, the number of transistors that can be arranged per unit area can be increased.

[0761] Transistor 400d is an example of a transistor included in element layer 620. Furthermore, transistor MTCK is an example of a transistor included in element layer 630. Additionally, light-emitting elements (light-emitting element 650R, light-emitting element 650G, and light-emitting element 650B) are an example of light-emitting elements included in element layer 660.

[0762] As substrate 410, a semiconductor substrate (e.g., a single-crystal substrate made of silicon or germanium) can be used. Furthermore, besides semiconductor substrates, substrate 410 can also be, for example, an SOI (Silicon On Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate containing stainless steel foil, a tungsten substrate, a substrate containing tungsten foil, a flexible substrate, a laminated film, or a paper or substrate film containing fibrous material. In this embodiment, the case where substrate 410 is a semiconductor substrate containing silicon as a material is described. Therefore, the transistors in element layer 620 can be Si transistors.

[0763] Transistor 400d includes a device separation layer 412, a conductive layer 416, an insulating layer 415, an insulating layer 417, a semiconductor region 413 formed by a portion of a substrate 410, a low-resistance region 414a serving as a source region or a drain region, and a low-resistance region 414b. Therefore, transistor 400d is a Si transistor. Although Figure 36 The diagram shows a structure in which one of the source and drain terminals of transistor 400d is electrically connected to conductive layer 514 disposed in element layer 630 via conductive layer 428, conductive layer 430 and conductive layer 456, but the electrical connection structure of a display device according to one embodiment of the present invention is not limited to this.

[0764] Transistor 400d can be implemented as a Fin-type structure, for example, by employing a structure in which the top surface of semiconductor region 413 and the side surfaces in the channel width direction are covered by a conductive layer 416 with an insulating layer 415 serving as a gate insulating layer. By forming a Fin-type transistor 400d, the effective channel width can be increased, thus improving the on-state characteristics of transistor 400d. Furthermore, since the effect of the electric field at the gate electrode can be enhanced, the off-state characteristics of transistor 400d can be improved. Alternatively, transistor 400d can also have a planar structure without a Fin-type structure.

[0765] Alternatively, transistor 400d can be either a p-channel transistor or an n-channel transistor. Furthermore, multiple transistors 400d can be provided, and both p-channel and n-channel transistors can be used.

[0766] The channel formation region of semiconductor region 413, the region theren, and the low-resistance regions 414a and 414b used as source or drain regions preferably comprise silicon-based semiconductors, specifically monocrystalline silicon. Alternatively, the aforementioned regions may also be formed using germanium, silicon germanium, gallium arsenide, aluminum gallium arsenide, or gallium nitride, for example. Silicon with effective quality controlled by applying stress to the crystal lattice to change the interplanar spacing can be used. Furthermore, transistor 400d may, for example, be a HEMT (High Electron Mobility Transistor) using gallium arsenide and aluminum gallium arsenide.

[0767] As the conductive layer 416 used as the gate electrode, a semiconductor material such as silicon containing elements that impart n-type conductivity, such as arsenic or phosphorus, or elements that impart p-type conductivity, such as boron or aluminum, can be used. Alternatively, as the conductive layer 416, conductive materials such as metallic materials, alloy materials, or metal oxide materials can be used.

[0768] Furthermore, since the work function is determined by the material of the conductive layer, the threshold voltage of the transistor can be adjusted by selecting the material of the conductive layer. Specifically, titanium nitride and tantalum nitride, or both, are preferably used as the conductive layer. In order to achieve both conductivity and embeddability, a stack of metal materials, tungsten and aluminum, or both, is preferably used as the conductive layer, especially tungsten in terms of heat resistance.

[0769] To separate the multiple transistors formed on the substrate 410 from each other, a device separation layer 412 is provided. The device separation layer can be formed, for example, using LOCOS (Local Oxidation of Silicon), STI (Shallow Trench Isolation), or mesa isolation.

[0770] Figure 36 An insulating layer 420 and an insulating layer 422 are sequentially stacked on the transistor 400d from the substrate 410 side.

[0771] As insulating layers 420 and 422, for example, one or more selected from silicon oxide, silicon oxynitride, silicon oxynitride, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum oxynitride, and aluminum nitride can be used.

[0772] The insulating layer 422 can also be used as a planarization film to flatten the steps generated by the transistor 400d, etc., which are covered by the insulating layer 420 and the insulating layer 422. For example, in order to improve flatness, the top surface of the insulating layer 422 can also be planarized by a planarization process using CMP or the like.

[0773] A conductive layer 428 is embedded in insulating layers 420 and 422, and is connected to transistors such as MTCK disposed above insulating layer 422. Furthermore, the conductive layer 428 functions as a connector or wiring.

[0774] In the display device 100N, a wiring layer 670 is provided on the transistor 400d. The wiring layer 670 includes, for example, an insulating layer 424, an insulating layer 426, a conductive layer 430, an insulating layer 450, an insulating layer 452, an insulating layer 454, and a conductive layer 456.

[0775] Insulating layers 424 and 426 are sequentially stacked on insulating layer 422 and conductive layer 428. Furthermore, in the region overlapping with conductive layer 428, openings are formed in insulating layers 424 and 426. A conductive layer 430 is embedded in these openings.

[0776] Furthermore, insulating layers 450, 452, and 454 are sequentially stacked on insulating layer 426 and conductive layer 430. Additionally, in the region overlapping with conductive layer 430, openings are formed in insulating layers 450, 452, and 454. Furthermore, conductive layer 456 is embedded within these openings.

[0777] The conductive layers 430 and 456, for example, have the function of a plug or wiring for connecting to the transistor 400d.

[0778] For example, similar to insulating layer 592 described later, insulating layers 424 and 450 preferably use insulating layers having barrier properties selected from one or more of hydrogen, oxygen, and water. Furthermore, similar to insulating layer 594 described later, insulating layers 426, 452, and 454 preferably use insulating layers with relatively low permittivity to reduce parasitic capacitance generated between wirings. In addition, insulating layers 426, 452, and 454 are used as interlayer insulating films and planarization films.

[0779] Furthermore, the conductive layer 456 preferably includes a conductive layer having a barrier effect selected from one or more of hydrogen, oxygen, and water.

[0780] Note that tantalum nitride is preferably used as an insulating layer with hydrogen barrier properties. Furthermore, by layering tantalum nitride and highly conductive tungsten, not only can the conductivity of the wiring be maintained, but hydrogen diffusion from the transistor 400d can also be suppressed. In this case, the hydrogen-barrier tantalum nitride layer is preferably in contact with the hydrogen-barrier insulating layer 450.

[0781] Furthermore, an insulating layer 513 is disposed above the insulating layer 454 and the conductive layer 456. An insulating layer IS1 is disposed on the insulating layer 513. Furthermore, conductive layers used as connectors or wiring are embedded in the insulating layers IS1 and 513. Thus, transistor 400d can be electrically connected to the conductive layer 514 disposed in the element layer 630. Alternatively, one of the source and drain of transistor MTCK can be electrically connected to one of the source and drain of transistor 400d.

[0782] A transistor MTCK is disposed on insulating layer IS1. Furthermore, insulating layers IS4, 574, and 581 are sequentially stacked on transistor MTCK. Additionally, conductive layers MPG, serving as connectors or wiring, are embedded in insulating layers IS3, IS4, 574, and 581. Similarly, as... Figure 36 As shown in the enlarged view of the area surrounded by the dashed line, the conductive layer MPG preferably makes direct contact with the conductive layer 239 through openings provided in the insulating layer 250 and the oxide semiconductor layer 230. Direct contact between the conductive layer MPG and the conductive layer 239 reduces contact resistance, which is preferred. Alternatively, the conductive layer MPG can also be made to contact the oxide semiconductor layer 230 to electrically connect the conductive layer MPG to the conductive layer 239 through the oxide semiconductor layer 230.

[0783] The insulating layer 574 preferably has the function of inhibiting the diffusion of impurities such as water and hydrogen (e.g., one or both of hydrogen atoms and hydrogen molecules). In other words, the insulating layer 574 is preferably used as a barrier insulating film to inhibit the incorporation of such impurities into the transistor MTCK. Furthermore, the insulating layer 574 preferably has the function of inhibiting the diffusion of oxygen (e.g., one or both of oxygen atoms and oxygen molecules). For example, the oxygen permeability of the insulating layer 574 is preferably lower than that of the insulating layers IS2, IS3, and IS4.

[0784] Therefore, insulating layer 574 is preferably used as a barrier insulating film to inhibit the diffusion of impurities such as water and hydrogen. Thus, insulating layer 574 is preferably made of an insulating material that has the function of inhibiting the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (e.g., N2O, NO, and NO2), and copper atoms (making it difficult for the aforementioned impurities to permeate). Alternatively, it is preferable to use an insulating material that has the function of inhibiting the diffusion of oxygen (e.g., one or both of oxygen atoms and oxygen molecules) (making it difficult for the aforementioned oxygen to permeate).

[0785] As an insulating layer that has the function of suppressing the permeation of impurities such as water and hydrogen and oxygen, the material shown in Embodiment 2 that can be used as an insulating layer with the function of suppressing the permeation of impurities and oxygen can be used.

[0786] Particularly preferred is the use of aluminum oxide or silicon nitride as the insulating layer 574. This suppresses the diffusion of impurities such as water and hydrogen from above the insulating layer 574 to the transistor MTCK. Alternatively, it suppresses the diffusion of oxygen contained in insulating layers such as IS3 from above the insulating layer 574.

[0787] Insulating layer 581 is preferably used as an interlayer film and its dielectric constant is lower than that of insulating layer 574. By using a material with a low dielectric constant as the interlayer film, parasitic capacitance generated between wirings can be reduced. For example, the relative dielectric constant of insulating layer 581 is preferably less than 4, more preferably less than 3. For example, the relative dielectric constant of insulating layer 581 is preferably less than 0.7 times the relative dielectric constant of insulating layer 574, more preferably less than 0.6 times. When insulating layer 581 is an interlayer film of a material with a low dielectric constant, parasitic capacitance generated between wirings can be reduced.

[0788] Furthermore, the concentration of impurities such as water and hydrogen in the insulating layer 581 is preferably reduced. In this case, silicon oxide, silicon oxynitride, silicon oxynitride, or silicon nitride can be used as the insulating layer 581, for example. Furthermore, fluorine-added silicon oxide, carbon-added silicon oxide, carbon and nitrogen-added silicon oxide, or porous silicon oxide can be used as the insulating layer 581, for example. In particular, silicon oxide and silicon oxynitride are preferred because they have thermal stability. In particular, materials such as silicon oxide, silicon oxynitride, and porous silicon oxide are preferred because they readily form regions containing oxygen released by heating. Furthermore, resin can be used as the insulating layer 581. In addition, combinations of the above-mentioned materials can be appropriately used as materials that can be used in the insulating layer 581.

[0789] Insulating layer 592 and insulating layer 594 are stacked sequentially on insulating layer 574 and insulating layer 581.

[0790] Furthermore, the insulating layer 592 is preferably a barrier insulating layer that prevents impurities such as water and hydrogen from diffusing from the substrate 410 and the transistor MTCK to the region above the insulating layer 592 (e.g., the region where light-emitting elements 650R, 650G, and 650B are disposed). Therefore, the insulating layer 592 is preferably made of an insulating material that has the function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, and water molecules (making it difficult for these impurities to permeate). Furthermore, depending on the situation, the insulating layer 592 is preferably made of an insulating material that has the function of suppressing the diffusion of impurities such as nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (e.g., N2O, NO, and NO2), and copper atoms (making it difficult for these impurities to permeate). Alternatively, it is preferable to have the function of suppressing the diffusion of oxygen (e.g., one or both of oxygen atoms and oxygen molecules).

[0791] As a hydrogen-barrier membrane, silicon nitride formed by CVD can be used, for example.

[0792] Similar to insulating layer 581, insulating layer 594 is preferably an interlayer film with a low dielectric constant. Therefore, insulating layer 594 can use materials that are also suitable for insulating layer 581.

[0793] Furthermore, the dielectric constant of insulating layer 594 is preferably lower than that of insulating layer 592. For example, the relative dielectric constant of insulating layer 594 is preferably less than 4, more preferably less than 3. Additionally, for example, the relative dielectric constant of insulating layer 594 is preferably 0.7 times or less than that of insulating layer 592, more preferably 0.6 times or less. When insulating layer 594 is an interlayer film of a material with a low dielectric constant, parasitic capacitance generated between wirings can be reduced.

[0794] Furthermore, conductive layers MPG, serving as plugs or wiring, are embedded in insulating layers IS3, IS4, 574, and 581, and conductive layers 596, serving as plugs or wiring, are embedded in insulating layers 592 and 594. In particular, conductive layers MPG and 596 are electrically connected to light-emitting elements disposed above insulating layer 594. Note that the same symbol is sometimes used to represent multiple conductive layers serving as plugs or wiring. Furthermore, in this specification, wiring and plugs connected to wiring can also be a single component. That is, a portion of a conductive layer is sometimes used as wiring, and a portion of a conductive layer is sometimes used as a plug.

[0795] As materials for the various plugs and wiring (e.g., conductive layer MPG, conductive layer 428, conductive layer 430, conductive layer 456, conductive layer 514, and conductive layer 596), conductive materials selected from one or more of metallic materials, alloy materials, metal nitride materials, and metal oxide materials can be used as single layers or in stacks. High-melting-point materials such as tungsten or molybdenum, which combine heat resistance and conductivity, are preferred; tungsten is particularly preferred. Furthermore, low-resistance conductive materials such as aluminum or copper are preferred. Using low-resistance conductive materials reduces wiring resistance.

[0796] Insulating layer 598 and insulating layer 599 are sequentially formed on insulating layer 594 and conductive layer 596.

[0797] Similar to insulating layer 592, as an example, insulating layer 598 preferably uses an insulating layer having barrier properties for one or more of hydrogen, oxygen, and water. Furthermore, similar to insulating layer 594, insulating layer 599 preferably uses an insulating layer with a relatively low permittivity to reduce parasitic capacitance generated between wirings. In addition, insulating layer 599 serves as an interlayer insulating film and a planarization film.

[0798] Light-emitting elements 650R, 650G, 650B and connecting portion 640 are formed on insulating layer 599.

[0799] The connecting portion 640, sometimes referred to as the cathode contact portion, is electrically connected to the cathode electrode of each of the light-emitting elements 650R, 650G, and 650B. Figure 36 In the connecting portion 640 shown, a conductive layer formed using the same process and materials as conductive layers 611a to 611c is electrically connected to the common electrode 615 described later. Although Figure 36 An example is shown in which the conductive layer is electrically connected to the common electrode 615 through the common layer 614 described later, but the conductive layer may also be in direct contact with the common electrode 615.

[0800] The connecting portion 640 can be arranged around the four sides of the display unit when viewed from above, or it can be arranged inside the display unit (for example, between adjacent light-emitting elements 650) (not shown).

[0801] The light-emitting element 650R includes a conductive layer 611a as a pixel electrode. Similarly, the light-emitting element 650G includes a conductive layer 611b as a pixel electrode, and the light-emitting element 650B includes a conductive layer 611c as a pixel electrode.

[0802] The conductive layers 611a, 611b, and 611c are respectively connected to the conductive layer 596 embedded in the insulating layer 594 through the conductive layer (plug) embedded in the insulating layer 599.

[0803] Light-emitting element 650R includes layer 613a, a common layer 614 on layer 613a, and a common electrode 615 on the common layer 614. Furthermore, light-emitting element 650G includes layer 613b, a common layer 614 on layer 613b, and a common electrode 615 on the common layer 614. Furthermore, light-emitting element 650B includes layer 613c, a common layer 614 on layer 613c, and a common electrode 615 on the common layer 614.

[0804] As materials for the pair of electrodes (pixel electrode and common electrode) forming the light-emitting element, metals, alloys, conductive compounds, and mixtures thereof can be appropriately used. Specifically, examples of such materials include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, as well as alloys appropriately combined with them. Furthermore, examples of such materials include indium tin oxide (In-Sn oxide, also known as ITO), In-Si-Sn oxide (also known as ITSO), indium zinc oxide (In-Zn oxide), and In-W-Zn oxide. Additionally, examples of such materials include aluminum alloys (alloys containing aluminum, nickel, and lanthanum, such as Al-Ni-La), and silver alloys (alloys containing silver and magnesium, and alloys containing silver, palladium, and copper, such as Ag-Pd-Cu, also known as APC). In addition, as materials, examples include elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium, cesium, calcium, strontium), rare earth metals such as europium and ytterbium, alloys of these elements in appropriate combinations, and graphene.

[0805] The 100N display device adopts an SBS structure. Because the SBS structure allows for optimization of materials and structure in each light-emitting element, the freedom in material and structural selection is increased, making it easier to improve brightness and reliability.

[0806] Furthermore, the display device 100N is a top-emitting type display device. In top-emitting types, transistors and the like can be arranged in a manner that overlaps with the light-emitting area of ​​the light-emitting element, so the pixel aperture ratio can be further improved compared to bottom-emitting types.

[0807] Layer 613a is formed to cover the top and side surfaces of conductive layer 611a. Similarly, layer 613b is formed to cover the top and side surfaces of conductive layer 611b. Furthermore, layer 613c is formed to cover the top and side surfaces of conductive layer 611c. Therefore, the entire area where conductive layers 611a, 611b, and 611c are disposed can be used as the light-emitting area of ​​light-emitting elements 650R, 650G, and 650B, thereby improving the pixel aperture ratio.

[0808] In light-emitting element 650R, layer 613a and common layer 614 can be collectively referred to as EL layers. Similarly, in light-emitting element 650G, layer 613b and common layer 614 can be collectively referred to as EL layers. Similarly, in light-emitting element 650B, layer 613c and common layer 614 can be collectively referred to as EL layers.

[0809] The EL layer includes at least a light-emitting layer. The light-emitting layer contains one or more light-emitting materials. Suitable light-emitting materials are those that emit light in colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red. Alternatively, materials that emit near-infrared light may also be used as light-emitting materials.

[0810] Layers 613a, 613b, and 613c are processed into island shapes using photolithography. Therefore, the angle formed between the top and side surfaces of layers 613a, 613b, and 613c at each end is approximately 90 degrees. On the other hand, for example, organic films formed using FMM (Fine Metal Mask) tend to thin closer to the ends; for instance, their top surface may be sloped within a range of 1 μm to 10 μm from the end, making it difficult to distinguish between the top and side surfaces.

[0811] In layers 613a, 613b, and 613c, the top surface and the side surface are clearly distinguishable. Therefore, in adjacent layers 613a and 613b, one side surface of layer 613a and one side surface of layer 613b are opposite each other. The same applies to any combination of layers 613a, 613b, and 613c.

[0812] Layers 613a, 613b, and 613c each include at least a light-emitting layer. For example, it is preferable that layers 613a, 613b, and 613c each include a light-emitting layer emitting red light, a light-emitting layer emitting green light, and a light-emitting layer emitting blue light, respectively. Furthermore, the light-emitting layers may be cyan, magenta, yellow, or white, in addition to the colors mentioned above.

[0813] Layers 613a, 613b, and 613c preferably include a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. Because the surfaces of layers 613a, 613b, and 613c are sometimes exposed during the manufacturing process of the display device, providing a carrier transport layer on the light-emitting layer can suppress the light-emitting layer from being exposed to the outermost surface, thereby reducing damage to the light-emitting layer. This improves the reliability of the light-emitting element.

[0814] The common layer 614 may include, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 614 may include a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. Light-emitting elements 650R, 650G, and 650B collectively include the common layer 614. Furthermore, the common layer 614 may be omitted, and the entire EL layer of the light-emitting element may be arranged in an island shape, similar to layers 613a, 613b, and 613c.

[0815] Furthermore, light-emitting elements 650R, 650G, and 650B collectively include a common electrode 615. Additionally, as... Figure 36 As shown, the common electrode 615, which is shared by multiple light-emitting elements, is electrically connected to the conductive layer in the connecting portion 640.

[0816] Furthermore, element layer 660 includes an insulating layer 625. The insulating layer 625 is preferably used as a barrier insulating layer against one or both of water and oxygen. Furthermore, the insulating layer 625 preferably has the function of inhibiting the diffusion of one or both of water and oxygen. Furthermore, the insulating layer 625 preferably has the function of trapping or fixing (also known as gettering) one or both of water and oxygen. When the insulating layer 625 has at least one of these functions, it can have a structure that inhibits the entry of impurities (typically one or both of water and oxygen) that may diffuse from the outside into each light-emitting element. By employing this structure, a highly reliable light-emitting element and a highly reliable display device can be provided.

[0817] As the insulating layer 625, the above-mentioned oxygen barrier insulating layer can be used, preferably aluminum oxide or silicon nitride.

[0818] Furthermore, the impurity concentration in the insulating layer 625 is preferably low. This prevents impurities from mixing into the EL layer from the insulating layer 625, thus inhibiting the degradation of the EL layer. Moreover, by reducing the impurity concentration in the insulating layer 625, the barrier properties against one or both of water and oxygen can be improved. For example, it is preferable that one of the hydrogen concentration and carbon concentration in the insulating layer 625 is sufficiently low, and preferably both the hydrogen concentration and carbon concentration are sufficiently low.

[0819] A protective layer 631 is provided on light-emitting elements 650R, 650G, and 650B. The protective layer 631 serves as a passivation film protecting the light-emitting elements 650R, 650G, and 650B. By providing the protective layer 631 covering the light-emitting elements, impurities such as water and oxygen can be prevented from entering the light-emitting elements, thereby improving the reliability of the light-emitting elements 650R, 650G, and 650B. The protective layer 631 preferably adopts a single-layer structure or a multilayer structure comprising at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide films, silicon oxynitride films, silicon oxynitride films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Furthermore, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide (IGZO) can also be used as the protective layer 631. The protective layer 631 can be formed using methods such as ALD, CVD, and sputtering. Although a structure including an inorganic insulating film is shown as protective layer 631, it is not limited to this. For example, a laminated structure of inorganic and organic insulating films may also be used as protective layer 631.

[0820] The protective layer 631 and the substrate 610 are bonded together by the adhesive layer 607. The seal for the light-emitting element can employ a solid sealing structure or a hollow sealing structure, etc. Figure 36 In this configuration, the space between substrate 410 and substrate 610 is filled with adhesive layer 607, thus employing a solid sealing structure. Alternatively, an inert gas (such as nitrogen or argon) can be used to fill the space, resulting in a hollow sealing structure. In this case, adhesive layer 607 can also be arranged in a manner that does not overlap with the light-emitting element. Furthermore, a resin different from that used for the frame-shaped adhesive layer 607 can be used to fill the space.

[0821] As the adhesive layer 607, various curing adhesives such as UV-curing adhesives, reactive curing adhesives, thermosetting adhesives, or anaerobic adhesives can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. In particular, materials with low moisture permeability, such as epoxy resins, are preferred. Furthermore, two-component mixed resins can also be used. Additionally, adhesive sheets can also be used.

[0822] Display device 100N is a top-emitting display device. The light-emitting element emits light onto one side of substrate 610. Therefore, substrate 610 is preferably made of a material with high transmittance to visible light. For example, as substrate 610, a substrate with high transmittance to visible light that can be applied to substrate 410 can be selected. Pixel electrodes contain a material that reflects visible light, and counter electrodes (common electrodes 615) contain a material that transmits visible light.

[0823] Note that, in one embodiment of the present invention, the display device may also employ a bottom-emitting structure where the light emitted by the light-emitting element is projected onto one side of the substrate 410, instead of a top-emitting structure. In this case, a substrate with high transmittance to visible light can be selected as the substrate 410.

[0824] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0825] (Implementation Method 10)

[0826] In this embodiment, a display module according to one aspect of the present invention is described.

[0827] <Display Module>

[0828] Figure 37 It is a 3D diagram illustrating the structure of the display module.

[0829] The display module includes a display device 100, an IC (integrated circuit), and an FPC177 or connector. For example, the display device described in Embodiment 1 can be used in the display device 100.

[0830] Display device 100 is electrically connected to IC176 and FPC177. FPC177 supplies signals and power to display device 100 from an external source. A connector is a mechanical component used to electrically connect conductors, allowing display device 100 to be electrically connected to the component of the connected object. For example, FPC177 can be used as a conductor. Additionally, a connector allows display device 100 to be detached from the connected object.

[0831] The display module includes IC176. For example, IC176 can be disposed on substrate 14b using COG (Chip On Glass) or similar methods. Alternatively, IC176 can be disposed on FPC using COF (Chip On Film) or similar methods. For example, gate driver circuitry or source driver circuitry can be used for IC176.

[0832] Display modules sometimes include touch sensors. For example, a projected capacitive touch sensor includes electrodes RX and TX, with an insulating layer disposed between the electrodes RX and TX. This creates a capacitance between the electrodes RX and TX. Furthermore, when a pulse signal is supplied to the electrode TX, the change in the projected capacitance generated between the electrodes RX and TX can be detected using the electrode RX. Additionally, the touch sensor can be used to detect the position of the user's finger on the display module.

[0833] <<Display Device 100H>>

[0834] Figure 38A This is a cross-sectional view illustrating the structure of the display device 100H.

[0835] The display device 100H includes a display portion 37b, a connecting portion 140, a circuit 164, and wiring 165, etc. The display device 100H includes a substrate 16b and a substrate 14b, which are bonded together. The display device 100H includes one or more connecting portions 140. The connecting portions 140 can be disposed on the outer side of the display portion 37b. For example, the connecting portion 140 can be disposed along one side of the display portion 37b. Alternatively, it can be disposed around multiple sides, such as four sides. In the connecting portion 140, a common electrode of a light-emitting device is electrically connected to a conductive layer, which supplies a predetermined potential to the common electrode.

[0836] Wiring 165 is supplied with signals and power from FPC177 or IC176. Wiring 165 supplies signals and power to display unit 37b and circuit 164.

[0837] For example, the gate driver circuit can be used as circuit 164.

[0838] The display device 100H includes a substrate 14b, a substrate 16b, a transistor 201, a transistor 205, a light-emitting device 63R, a light-emitting device 63G, and a light-emitting device 63B, etc. (see reference) Figure 38A For example, light-emitting device 63R emits red light 83R, light-emitting device 63G emits green light 83G, and light-emitting device 63B emits blue light 83B. Additionally, various optical components can be disposed on the outer side of substrate 16b. For example, polarizers, retardation plates, light diffusion layers (e.g., diffusion films), anti-reflection layers, and light-concentrating films can be disposed thereon.

[0839] For example, the light-emitting devices described in Embodiments 3 to 7 can be used in light-emitting devices 63R, 63G, and 63B.

[0840] The light-emitting device includes a conductive layer 171, which serves as a pixel electrode. The conductive layer 171 has a recess that overlaps with openings provided in insulating layers 214, 215, and 213. Additionally, the transistor 205 includes a conductive layer 222b, which is electrically connected to the conductive layer 171.

[0841] The display device 100H includes an insulating layer 272. The insulating layer 272 covers the ends of the EL layer 172R, the ends of the EL layer 172G, and the ends of the EL layer 172B (see reference). Figure 38A ).

[0842] The display device 100H includes a protective layer 273 and an adhesive layer 142. The protective layer 273 covers light-emitting devices 63R, 63G, and 63B. The adhesive layer 142 adheres the protective layer 273 to the substrate 16b. The adhesive layer 142 fills the space between the substrate 16b and the protective layer 273. Alternatively, for example, the adhesive layer 142 can be formed in a frame shape without overlapping the light-emitting devices, and the area surrounded by the adhesive layer 142, the substrate 16b, and the protective layer 273 can be filled with a resin different from that used in the adhesive layer 142. Alternatively, an inert gas (such as nitrogen or argon) can be used to fill the space, i.e., a hollow, sealed structure can be employed. For example, a material suitable for the adhesive layer 122 can be applied to the adhesive layer 142.

[0843] The display device 100H has a connection portion 140, which includes a conductive layer 168. The conductive layer 168 is supplied with a power supply potential. Additionally, a light-emitting device includes a conductive layer 173, which is electrically connected to the conductive layer 168 and is also supplied with a power supply potential. The conductive layer 173 serves as a common electrode. Alternatively, for example, a conductive film can be fabricated to form both the conductive layer 171 and the conductive layer 168.

[0844] Display device 100H is a top-emitting display device. The light-emitting device emits light toward the substrate 16b. The conductive layer 171 contains a material that reflects visible light, and the conductive layer 173 transmits visible light.

[0845] [Insulating layer 211, insulating layer 213, insulating layer 215, insulating layer 214]

[0846] Insulating layers 211, 213, 215, and 214 are sequentially disposed on substrate 14b. Note that there is no limit to the number of insulating layers; they can be a single layer or two or more layers.

[0847] For example, inorganic insulating films can be used as insulating layers 211, 213, and 215. For example, silicon nitride films, silicon oxynitride films, silicon oxide films, silicon oxynitride films, aluminum oxide films, or aluminum nitride films can be used. Alternatively, hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide films, lanthanum oxide films, cerium oxide films, or neodymium oxide films can also be used. Furthermore, two or more of the above-mentioned insulating films can be stacked.

[0848] Insulating layers 215 and 214 cover the transistor. Insulating layer 214 serves as a planarization layer. For example, it is preferable to use a material that does not readily diffuse impurities such as water and hydrogen for insulating layer 215 or insulating layer 214. This effectively suppresses the diffusion of impurities from the outside into the transistor. Furthermore, it improves the reliability of the display device.

[0849] For example, an organic insulating layer can be suitable as the insulating layer 214. Specifically, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, silicone resin, benzocyclobutene resin, phenolic resin, and precursors of the above resins can be used as the organic insulating layer. Alternatively, a laminated structure of organic and inorganic insulating layers can be used for the insulating layer 214. Thus, the outermost surface layer of the insulating layer 214 can be used as an etching protection layer. For example, when it is desired to prevent the formation of recesses in the insulating layer 214 when the conductive layer 171 is processed into a predetermined shape, this phenomenon can be suppressed.

[0850] [Transistor 201, Transistor 205]

[0851] Transistor 201 and transistor 205 are both formed on substrate 14b. These transistors can be manufactured using the same materials and the same process.

[0852] Transistors 201 and 205 include a conductive layer 221, an insulating layer 211, conductive layers 222a and 222b, a semiconductor layer 231, an insulating layer 213, and a conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The conductive layer 221 serves as the gate, and the insulating layer 211 serves as the first gate insulating layer. The conductive layers 222a and 222b serve as the source and drain, respectively. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231. The conductive layer 223 serves as the gate, and the insulating layer 213 serves as the second gate insulating layer. Here, multiple layers obtained by processing the same conductive film are covered with the same shaded lines.

[0853] There are no particular limitations on the structure of the transistors included in the display device of this embodiment. For example, planar transistors, interleaved transistors, or anti-interleaved transistors can be used. In addition, the transistors can have a top-gate structure or a bottom-gate structure. Alternatively, gates can be provided on the top and bottom of the semiconductor layer forming the channel.

[0854] Transistors 201 and 205 employ a structure in which a semiconductor layer forming a channel is sandwiched between two gates. Alternatively, the two gates can be connected, and the transistor can be driven by supplying the same signal to both gates. Alternatively, the threshold voltage of the transistor can also be controlled by applying a potential to one of the two gates to control the threshold voltage and applying a potential to the other to drive it.

[0855] There are no particular restrictions on the crystallinity of the semiconductor layer of the transistor; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors in which a portion has crystalline regions) can be used. Using crystalline semiconductors can suppress the degradation of transistor characteristics, making them preferred.

[0856] The semiconductor layer of the transistor preferably comprises a metal oxide. That is, the transistors included in the display device of this embodiment preferably use OS transistors.

[0857] [Semiconductor layer]

[0858] For example, indium oxide, gallium oxide, and zinc oxide can be used in the semiconductor layer. Furthermore, the metal oxide preferably comprises two or three selected from indium, element M, and zinc. Note that element M is selected from one or more of gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium. In particular, element M is preferably selected from one or more of aluminum, gallium, yttrium, and tin.

[0859] In particular, as the metal oxide used for the semiconductor layer, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also denoted as IGZO) is preferred. Alternatively, an oxide containing indium, tin, and zinc (also denoted as ITZO (registered trademark)) is preferred. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferred. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also denoted as IAZO) is preferred. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also denoted as IAGZO) is preferred.

[0860] When the metal oxide used for the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably greater than or equal to the atomic ratio of M. Examples of such atomic ratios of metal elements in the In-M-Zn oxide include: In:M:Zn = 1:1:1 or similar; In:M:Zn = 1:1:1.2 or similar; In:M:Zn = 1:3:2 or similar; In:M:Zn = 1:3:4 or similar; In:M:Zn = 2:1:3 or similar; In:M:Zn = 3:1:2 or similar; In:M: Compositions with Zn = 4:2:3 or similar, In:M:Zn = 4:2:4.1 or similar, In:M:Zn = 5:1:3 or similar, In:M:Zn = 5:1:6 or similar, In:M:Zn = 5:1:7 or similar, In:M:Zn = 5:1:8 or similar, In:M:Zn = 6:1:6 or similar, In:M:Zn = 5:2:5 or similar. Note that "simultaneous" composition includes a range of ±30% of the desired atomic ratio.

[0861] For example, when the atomic number ratio is recorded as In:Ga:Zn = 4:2:3 or similar, the following cases are included: when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. Furthermore, when the atomic number ratio is recorded as In:Ga:Zn = 5:1:6 or similar, the following cases are included: when In is 5, Ga is greater than 0.1 and less than 2, and Zn is 5 or more and less than 7. Additionally, when the atomic number ratio is recorded as In:Ga:Zn = 1:1:1 or similar, the following cases are included: when In is 1, Ga is greater than 0.1 and less than 2, and Zn is greater than 0.1 and less than 2.

[0862] The semiconductor layer may also comprise two or more metal oxide layers with different compositions. For example, a stacked structure using a first metal oxide layer with an In:M:Zn ratio of 1:3:4 or similar [atomic ratio] and a second metal oxide layer disposed on the first metal oxide layer with an In:M:Zn ratio of 1:1:1 or similar [atomic ratio] is suitable. Furthermore, gallium or aluminum is particularly preferred as element M.

[0863] For example, a stacked structure selected from any one of indium oxide, indium gallium oxide and IGZO, and any one of IAZO, IAGZO and ITZO (registered trademarks) can also be used.

[0864] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0865] Alternatively, transistors (Si transistors) in which silicon is used for the channel formation region can also be used. Examples of silicon include monocrystalline silicon, polycrystalline silicon, and amorphous silicon. In particular, transistors containing low-temperature polysilicon (LTPS) in the semiconductor layer (also known as LTPS transistors) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0866] By using Si transistors such as LTPS transistors, circuits requiring high-frequency driving (e.g., data driver circuits) and display sections can be formed on the same substrate. Therefore, the external circuitry mounted to the display device can be simplified, reducing component and installation costs.

[0867] OS transistors have a much higher field-effect mobility than transistors using amorphous silicon. Furthermore, OS transistors exhibit extremely low source-drain leakage current (also known as off-state current) in the off-state, allowing them to retain the charge stored in the capacitor connected in series with the transistor for extended periods. Additionally, the use of OS transistors can reduce the power consumption of display devices.

[0868] Furthermore, to increase the luminous brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the current flowing through the light-emitting device. For this purpose, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Because the source-drain breakdown voltage of an OS transistor is higher than that of a Si transistor, a higher voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing through the light-emitting device can be increased, thereby improving the luminous brightness of the light-emitting device.

[0869] Furthermore, when the transistor is driven in the saturation region, the OS transistor allows for a smaller change in the source-drain current as the gate-source voltage changes, compared to a Si transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be precisely determined by controlling the gate-source voltage. This allows control over the amount of current flowing through the light-emitting device, thereby increasing the grayscale value of the pixel circuit.

[0870] Furthermore, regarding the saturation characteristics of the current flowing through a transistor when driven in the saturation region, compared to a Si transistor, an OS transistor can maintain a stable current (saturation current) even when the source-drain voltage is gradually increased. Therefore, by using an OS transistor as a driving transistor, a stable current can flow through the light-emitting device even if the current-voltage characteristics of the device, for example, become non-uniform. In other words, when an OS transistor is driven in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased. This allows for stable illumination of the light-emitting device.

[0871] As described above, by using OS transistors as driving transistors included in pixel circuits, it is possible to achieve suppression of black impurities, increase of luminous brightness, multi-grayscale scaling, and suppression of non-uniformity of light-emitting devices.

[0872] The transistors included in circuit 164 and the transistors included in display unit 107 may have the same structure or different structures. The multiple transistors included in circuit 164 may have the same structure or two or more different structures. Similarly, the multiple transistors included in display unit 107 may have the same structure or two or more different structures.

[0873] All transistors included in the display unit 107 may be OS transistors or Si transistors. Alternatively, some transistors included in the display unit 107 may be OS transistors and the remaining transistors may be Si transistors.

[0874] For example, by using both LTPS transistors and OS transistors in the display section 107, a display device with low power consumption and high driving capability can be realized. Furthermore, the structure combining LTPS transistors and OS transistors is sometimes referred to as LTPO. Additionally, it is preferable, for example, to use the OS transistor as a switch for controlling the on / off state of the wiring and the LTPS transistor as a current control transistor.

[0875] For example, one of the transistors included in the display unit 107 is used as a transistor to control the current flowing through the light-emitting device, and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. An LTPS transistor is preferably used as this driving transistor. Therefore, the current flowing through the light-emitting device can be increased.

[0876] On the other hand, one of the other transistors included in the display unit 107 is used as a switch to control the selection and non-selection of pixels, and can also be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the signal line. An OS transistor is preferably used as the selection transistor. Therefore, even with a significantly low frame rate (e.g., below 1 fps), the grayscale level of the pixels can be maintained, thereby reducing power consumption by stopping the driver when displaying a static image.

[0877] Thus, a display device according to one aspect of the present invention can simultaneously possess high aperture ratio, high definition, high display quality, and low power consumption.

[0878] One aspect of the present invention provides a display device comprising an OS transistor and a light-emitting device having an MML structure. By employing this structure, leakage current flowing through the transistor and leakage current flowing between adjacent light-emitting devices can be extremely low. Furthermore, by employing the above structure, when an image is displayed on the display device, the viewer can observe one or more of the following: image sharpness, image clarity, high color saturation, and high contrast. Additionally, by employing a structure with extremely low leakage current flowing through the transistor and transverse leakage current between light-emitting devices, for example, a display with minimal light leakage (so-called impure black) that may occur when displaying black can be achieved.

[0879] In particular, the MML structure of the light-emitting device can make the current flowing between adjacent light-emitting devices extremely low.

[0880] [Transistor 209, Transistor 210]

[0881] Figure 38B and Figure 38C This is a cross-sectional view illustrating another example of the cross-sectional structure of a transistor that can be used in the display device 100H.

[0882] Transistors 209 and 210 include a conductive layer 221, an insulating layer 211, a semiconductor layer 231, conductive layers 222a and 222b, an insulating layer 225, a conductive layer 223, and an insulating layer 215. The semiconductor layer 231 has a channel forming region 231i and a pair of low-resistance regions 231n. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The conductive layer 221 serves as the gate, and the insulating layer 211 serves as a first gate insulating layer. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. The conductive layer 223 serves as the gate, and the insulating layer 225 serves as a second gate insulating layer. The conductive layer 222a is electrically connected to one of the pair of low-resistance regions 231n, and the conductive layer 222b is electrically connected to the other of the pair of low-resistance regions 231n. The insulating layer 215 covers the conductive layer 223. The insulating layer 218 also covers the transistor.

[0883] [Example 1 of the structure of insulating layer 225]

[0884] In transistor 209, insulating layer 225 covers the top and side surfaces of semiconductor layer 231 (see reference). Figure 38B Insulating layers 225 and 215 have openings in which conductive layers 222a and 222b are electrically connected to the low-resistance region 231n. Furthermore, one of conductive layers 222a and 222b is used as a source, and the other as a drain.

[0885] [Structural Example 2 of Insulation Layer 225]

[0886] In transistor 210, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but not with the low-resistance region 231n (see reference). Figure 38C For example, conductive layer 223 can be used as a mask to process insulating layer 225 into a specified shape. Insulating layer 215 covers insulating layer 225 and conductive layer 223. In addition, insulating layer 215 has an opening, and conductive layers 222a and 222b are electrically connected to low-resistance region 231n.

[0887] [Connecting part 204]

[0888] A connection portion 204 is disposed on the substrate 14b. The connection portion 204 includes a conductive layer 166, which is electrically connected to the wiring 165. The connection portion 204 does not overlap with the substrate 16b, and the conductive layer 166 is exposed. A conductive film can be fabricated to form the conductive layer 166 and the conductive layer 171. In addition, the conductive layer 166 is electrically connected to the FPC 177 through a connection layer 242. For example, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP) can be used as the connection layer 242.

[0889] <<Display Device 100I>>

[0890] Figure 39 This is a cross-sectional view illustrating the structure of display device 100I. Display device 100I differs from display device 100H in that it is flexible. In other words, display device 100I is a flexible display. Display device 100I includes a substrate 17 instead of substrate 14b and a substrate 18 instead of substrate 16b. Both substrate 17 and substrate 18 are flexible. Furthermore, display device 100I includes a conductive layer 169A, a conductive layer 169B, and an insulating layer 163. Conductive layers 169A and 169B are overlapped between adjacent light-emitting devices in a manner that does not overlap with the light-emitting devices. Additionally, the insulating layer 163 is sandwiched between conductive layers 169A and 169B and is transparent. For example, conductive layer 169A can be used as an electrode of a projected capacitive touch sensor. Additionally, insulating layer 163 can be used to insulate the portion where a pair of electrodes of a touch sensor intersect. Additionally, conductive layer 169B can be used for the portion where one electrode connects to another across the other.

[0891] The display device 100I includes an adhesive layer 156 and an insulating layer 162. The adhesive layer 156 bonds the insulating layer 162 to the substrate 17. For example, a material suitable for the adhesive layer 122 can be used for the adhesive layer 156. Alternatively, for example, a material suitable for insulating layers 211, 213, or 215 can be used for the insulating layer 162. Transistors 201 and 205 are disposed on the insulating layer 162.

[0892] For example, an insulating layer 162 is formed on a manufacturing substrate, and transistors and light-emitting devices are formed on the insulating layer 162. Next, for example, an adhesive layer 142 is formed on the light-emitting device, and the manufacturing substrate is bonded to the substrate 18 using the adhesive layer 142. Next, the manufacturing substrate is separated from the insulating layer 162, exposing the surface of the insulating layer 162. Then, an adhesive layer 156 is formed on the exposed surface of the insulating layer 162, and the insulating layer 162 is bonded to the substrate 17 using the adhesive layer 156. Thus, the constituent elements formed on the manufacturing substrate can be transferred to the substrate 17 to manufacture the display device 100I.

[0893] <<Display Device 100J>>

[0894] Figure 40 This is a cross-sectional view illustrating the structure of display device 100J. The difference between display device 100J and display device 100H is that display device 100J includes a light-emitting device 63W instead of light-emitting devices 63R, 63G and 63B; and includes coloring layers 183R, 183G and 183B.

[0895] The display device 100J includes a color layer 183R, a color layer 183G, and a color layer 183B located between substrates 16b and 14b. The color layer 183R overlaps with one light-emitting device 63W, the color layer 183G overlaps with another light-emitting device 63W, and the color layer 183B overlaps with another light-emitting device 63W.

[0896] The display device 100J includes a light-shielding layer 117. For example, it includes a light-shielding layer 117 located between color layers 183R and 183G, between color layers 183G and 183B, and between color layers 183B and 183R. In addition, the light-shielding layer 117 includes a region that overlaps with the connecting portion 140 and a region that overlaps with the circuit 164.

[0897] The light-emitting device 63W can, for example, emit white light. Additionally, for example, the color layer 183R can transmit red light, the color layer 183G can transmit green light, and the color layer 183B can transmit blue light. Thus, the display device 100J can, for example, emit red light 83R, green light 83G, and blue light 83B to achieve full-color display.

[0898] <<Display Device 100K>>

[0899] Figure 41This is a cross-sectional view illustrating the structure of display device 100K. Display device 100K is a bottom-emitting type display device, which differs from display device 100H. The light-emitting device emits light 83R, light 83G, and light 83B onto the substrate 14b side. A material that transmits visible light is used in conductive layer 171. Conversely, a material that reflects visible light is used in conductive layer 173.

[0900] <<Display Device 100L>>

[0901] Figure 42 This is a cross-sectional view illustrating the structure of display device 100L. Display device 100L differs from display device 100H in that it is flexible and a bottom-emitting display device. Display device 100L includes substrate 17 instead of substrate 14b and substrate 18 instead of substrate 16b. Both substrate 17 and substrate 18 are flexible. Light-emitting devices emit light 83R, light 83G, and light 83B onto one side of substrate 14b.

[0902] Furthermore, conductive layers 221 and 223 can be either transparent to visible light or reflective of visible light. When conductive layers 221 and 223 are transparent to visible light, the visible light transmittance in the display unit 107 can be increased. On the other hand, when conductive layers 221 and 223 are reflective of visible light, the amount of visible light incident on the semiconductor layer 231 can be reduced. Additionally, damage to the semiconductor layer 231 can be reduced. Therefore, the reliability of the display device 100K or display device 100L can be improved.

[0903] Note that even when using a top-emitting display device such as display device 100H or display device 100I, at least a portion of the layer constituting transistor 205 can be transparent to visible light. In this case, conductive layer 171 is also transparent to visible light. As described above, the visible light transmittance of display section 107 can be improved.

[0904] <<Display Device 100M>>

[0905] Figure 43 This is a cross-sectional view illustrating the structure of display device 100M. Display device 100M includes a light-emitting device 63W replacing light-emitting devices 63R, 63G, and 63B, and includes color layers 183R, 183G, and 183B. It is a bottom-emitting type display device, which is different from display device 100H.

[0906] The display device 100M includes a color layer 183R, a color layer 183G, and a color layer 183B. Additionally, the display device 100M includes a light-shielding layer 117.

[0907] [Shader layer 183R, shader layer 183G, and shader layer 183B]

[0908] Colored layer 183R is located between one light-emitting device 63W and substrate 14b, colored layer 183G is located between another light-emitting device 63W and substrate 14b, and colored layer 183B is located between another light-emitting device 63W and substrate 14b. For example, colored layer 183R, colored layer 183G, and colored layer 183B can be disposed between insulating layer 215 and insulating layer 214.

[0909] [Light-shielding layer 117]

[0910] A light-shielding layer 117 is disposed on the substrate 14b and is located between the substrate 14b and the transistor 205. Additionally, an insulating layer 153 is located between the light-shielding layer 117 and the transistor 205. For example, the light-shielding layer 117 does not overlap with the light-emitting area of ​​the light-emitting device 63W. Furthermore, for example, the light-shielding layer 117 overlaps with the connection portion 140 and the circuit 164.

[0911] The light-shielding layer 117 can also be provided in the display device 100K or the display device 100L. In this case, the light emitted by the light-emitting devices 63R, 63G, and 63B can be suppressed from being reflected by the substrate 14b and diffused inside the display device 100K or the display device 100L. As a result, the display device 100K and the display device 100L can be display devices with high display quality. On the other hand, by not providing the light-shielding layer 117, the light extraction efficiency of the light emitted by the light-emitting devices 63R, 63G, and 63B can be improved.

[0912] At least a portion of this embodiment can be implemented in combination with other embodiments described in this specification.

[0913] (Implementation Method 11)

[0914] In this embodiment, an electronic device according to one aspect of the present invention will be described.

[0915] The electronic device of this embodiment includes a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention has high reliability and is easily implemented with high definition and high resolution. Therefore, it can be used in the display units of various electronic devices.

[0916] As electronic devices, examples include not only television sets, desktop or laptop personal computers, computer monitors, digital signage, and large game machines such as pinball machines, but also digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and sound reproduction devices.

[0917] In particular, because the display device of one aspect of the present invention can improve clarity, it can be suitable for use in electronic devices that include a smaller display section. Examples of such electronic devices include watch-type and bracelet-type information terminal devices (wearable devices), wearable devices that can be worn on the head such as head-mounted displays for VR, glasses-type AR devices, and MR devices.

[0918] The display device of one aspect of the present invention preferably has extremely high resolutions such as HD (1280×720 pixels), FHD (1920×1080 pixels), WQHD (2560×1440 pixels), WQXGA (2560×1600 pixels), 4K (3840×2160 pixels), 8K (7680×4320 pixels), etc. In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (clarity) of the display device of one aspect of the present invention is preferably 100 ppi or higher, preferably 300 ppi or higher, more preferably 500 ppi or higher, further preferably 1000 ppi or higher, even more preferably 2000 ppi or higher, even more preferably 3000 ppi or higher, still more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using the aforementioned display device with one or both of high resolution and high definition, the sense of realism and depth can be further enhanced in portable or home electronic devices. Furthermore, there is no particular limitation on the screen ratio (aspect ratio) of the display device according to one aspect of the present invention. For example, the display device can accommodate various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0919] The electronic device in this embodiment may also include a sensor (which has the function of measuring factors such as force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation).

[0920] The electronic device of this embodiment can have various functions. For example, it can have the following functions: displaying various information (static images, dynamic images, text images, etc.) on the display unit; touch panel function; displaying calendar, date, or time, etc.; executing various software (programs); wireless communication function; or reading programs or data stored in the storage medium; etc.

[0921] use Figures 44A to 44DThis section describes an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: displaying AR content, displaying VR content, displaying SR content, and displaying MR content. When an electronic device has the function of displaying at least one of AR, VR, SR, and MR content, it can enhance the user's sense of immersion.

[0922] Figure 44A The electronic device 6700A shown and Figure 44B The electronic devices 6700B shown include a pair of display panels 6751, a pair of frames 6721, a communication unit (not shown), a pair of mounting units 6723, a control unit (not shown), an imaging unit (not shown), a pair of optical components 6753, an eyeglass frame 6757, and a pair of nose pads 6758.

[0923] The display panel 6751 can be used with a display device according to one aspect of the present invention. Thus, a highly reliable electronic device can be realized.

[0924] Both electronic devices 6700A and 6700B can project images displayed on the display panel 6751 onto the display area 6756 in the optical component 6753. Because the optical component 6753 is transparent, the user can see the image displayed on the display area by overlapping the image seen through the optical component 6753. Therefore, both electronic devices 6700A and 6700B are capable of AR display.

[0925] Both electronic devices 6700A and 6700B can be equipped with cameras capable of capturing images from the front, serving as imaging units. Furthermore, by incorporating accelerometers such as gyroscopes into both electronic devices 6700A and 6700B, the orientation of the user's head can be detected, and the corresponding image can be displayed on the display area 6756.

[0926] The communications unit includes a wireless communication device through which video signals can be supplied, for example. Additionally, a connector capable of connecting cables supplying video signals and power potential may be included, either in place of the wireless communication device or in addition to the wireless communication device.

[0927] In addition, electronic devices 6700A and 6700B are equipped with batteries that can be charged wirelessly or via wired means, or both.

[0928] The frame 6721 may also be equipped with a touch sensor module. The touch sensor module has the function of detecting whether the outer surface of the frame 6721 is touched. Through the touch sensor module, various processing actions can be performed based on user tap or swipe operations. For example, a tap operation can perform processing such as temporarily pausing or replaying a moving image, while a swipe operation can perform processing such as fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two frames 6721, the operating range can be expanded.

[0929] Various touch sensors can be used as touch sensor modules. For example, capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be employed. In particular, capacitive or optical sensors are preferred for use in touch sensor modules.

[0930] When using optical touch sensors, photoelectric conversion elements (also known as photoelectric conversion devices) can be used as the light-receiving element. The active layer of the photoelectric conversion element can use one or both of inorganic and organic semiconductors.

[0931] Figure 44C The electronic device 6800A shown and Figure 44D The electronic devices 6800B shown include a pair of display units 6820, a frame 6821, a communication unit 6822, a pair of mounting units 6823, a control unit 6824, a pair of imaging units 6825, and a pair of lenses 6832.

[0932] The display unit 6820 can be equipped with a display device according to one aspect of the present invention. This allows for the realization of a highly reliable electronic device.

[0933] The display unit 6820 is located inside the housing 6821 in a position visible through the lens 6832. Furthermore, by displaying different images on each of the pair of display units 6820, three-dimensional display utilizing parallax can be achieved.

[0934] Both electronic devices 6800A and 6800B can be referred to as VR-oriented electronic devices. Users wearing electronic devices 6800A or 6800B can see the image displayed on the display unit 6820 through the lens 6832.

[0935] Electronic devices 6800A and 6800B preferably have a mechanism that allows adjustment of the left and right positions of the lens 6832 and the display unit 6820 to position them in the most suitable way according to the user's eye position. Furthermore, a mechanism is preferably provided in which the focus is adjusted by changing the distance between the lens 6832 and the display unit 6820.

[0936] The user can use the mounting unit 6823 to wear the electronic device 6800A or electronic device 6800B on their head. Note, for example, in... Figure 44C The mounting part is shown to have a shape similar to the temples of eyeglasses (also called temple wires, etc.), but is not limited to this. As long as the user can wear it, the mounting part 6823 can have, for example, a helmet-shaped or strap-shaped shape.

[0937] The imaging unit 6825 has the function of acquiring external information. The data acquired by the imaging unit 6825 can be output to the display unit 6820. An image sensor can be used in the imaging unit 6825. Alternatively, multiple cameras can be provided to accommodate various viewing angles such as telephoto and wide-angle.

[0938] Note that the example shown here includes an imaging unit 6825, which can be a ranging sensor (also called a detection unit) capable of measuring the distance to an object. In other words, the imaging unit 6825 is one type of detection unit. For example, an image sensor or a distance image sensor such as a Light Detection and Ranging (LIDAR) sensor can be used as the detection unit. By using images acquired by a camera and images acquired by a distance image sensor, more information can be obtained, enabling more precise attitude control.

[0939] The electronic device 6800A may also include a vibration mechanism for use as bone conduction headphones. For example, one or more of the display unit 6820, the frame 6821, and the mounting unit 6823 may adopt a structure including this vibration mechanism. Thus, there is no need to separately install audio equipment such as headphones, earphones, or speakers; one can enjoy images and sound simply by wearing the electronic device 6800A.

[0940] Electronic devices 6800A and 6800B may also include input terminals. For example, cables supplying image signals from image output devices and power for charging batteries installed in the electronic devices can be connected to the input terminals.

[0941] An electronic device according to one aspect of the present invention may also have the function of wirelessly communicating with the headset 6750. The headset 6750 includes a communication unit (not shown) and has wireless communication functionality. The headset 6750 can receive information (e.g., voice data) from the electronic device via the wireless communication function. For example, Figure 44A The illustrated electronic device 6700A has the function of transmitting information to the headset 6750 via wireless communication. Additionally, for example... Figure 44C The electronic device 6800A shown has the function of sending information to the headset 6750 via wireless communication.

[0942] In addition, electronic devices may also include an earphone unit. Figure 44B The illustrated electronic device 6700B includes an earphone unit 6727. For example, a structure can be adopted in which the earphone unit 6727 and the control unit are connected in a wired manner. A portion of the wiring connecting the earphone unit 6727 and the control unit can also be configured inside the housing 6721 or the mounting portion 6723.

[0943] same, Figure 44D The illustrated electronic device 6800B includes an earphone unit 6827. For example, a structure can be adopted in which the earphone unit 6827 and the control unit 6824 are connected by a wire. A portion of the wiring connecting the earphone unit 6827 and the control unit 6824 can also be disposed inside the housing 6821 or the mounting portion 6823. Alternatively, the earphone unit 6827 and the mounting portion 6823 can also include magnets. Thus, the earphone unit 6827 can be magnetically secured to the mounting portion 6823, making storage easy, which is preferable.

[0944] Electronic devices may also include an audio output terminal capable of connecting to headphones or headsets. Additionally, electronic devices may include one or both of an audio input terminal and an audio input mechanism. For example, a microphone or other sound-receiving device can be used as an audio input mechanism. By incorporating an audio input mechanism into the electronic device, it can be given a so-called headset function.

[0945] Thus, as an embodiment of the present invention, both eyeglass type (electronic device 6700A and electronic device 6700B, etc.) and eye mask type (electronic device 6800A and electronic device 6800B, etc.) are preferred electronic devices.

[0946] In addition, one aspect of the present invention allows the electronic device to transmit information to headphones in a wired or wireless manner.

[0947] Figure 45A The electronic device 6500 shown is a portable information terminal device that can be used as a smartphone.

[0948] Electronic device 6500 includes a frame 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0949] The display unit 6502 can use a display device according to one aspect of the present invention. Therefore, a highly reliable electronic device can be realized.

[0950] Figure 45B This is a cross-sectional schematic diagram of one end of the microphone 6506, including the frame 6501.

[0951] A light-transmitting protective component 6510 is provided on one side of the display surface of the frame 6501. The space surrounded by the frame 6501 and the protective component 6510 contains a display panel 6511, an optical component 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc.

[0952] The display panel 6511, optical component 6512, and touch sensor panel 6513 are fixed to the protective component 6510 using an adhesive layer (not shown).

[0953] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and this folded area is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals disposed on a printed circuit board 6517.

[0954] The display panel 6511 can be a flexible display according to one aspect of the present invention. This allows for the realization of an extremely lightweight electronic device. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be installed while minimizing the thickness of the electronic device. Additionally, by folding a portion of the display panel 6511 to provide a connection to the FPC 6515 on the back of the pixel section, a narrow-bezel electronic device can be realized.

[0955] Figure 45C An example of a television device is shown. In the television device 7100, a display unit 7000 is assembled in a frame 7101. Here is shown the structure in which the frame 7101 is supported by a bracket 7103.

[0956] The display unit 7000 can use a display device according to one aspect of the present invention. This allows for the realization of a highly reliable electronic device.

[0957] It can be operated using the operating switches provided in the housing 7101 and the separately provided remote control 7111. Figure 45C The operation of the television device 7100 shown is illustrated. Alternatively, a touch sensor may be included in the display unit 7000, allowing operation of the television device 7100 by touching the display unit 7000 with a finger or similar object. Furthermore, a display unit for displaying data output from the remote control 7111 may be included in the remote control 7111. Channel and volume adjustments can be made using the operation keys or touch panel of the remote control 7111, and the images displayed on the display unit 7000 can also be manipulated.

[0958] In addition, the television device 7100 includes a receiver and a modem. It can receive general television broadcasts using the receiver. Furthermore, it can connect to a wired or wireless communication network via the modem to conduct one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0959] Figure 45D An example of a notebook computer is shown. The notebook computer 7200 includes a chassis 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214, etc. A display unit 7000 is assembled in the chassis 7211.

[0960] The display unit 7000 can use a display device according to one aspect of the present invention. This allows for the realization of a highly reliable electronic device.

[0961] Figure 45E and Figure 45F Here is an example of digital signage.

[0962] Figure 45E The digital sign 7300 shown includes a frame 7301, a display unit 7000, and a speaker 7303. It may also include LEDs, operation buttons (including a power switch or operation switch), connection terminals, various sensors, and a microphone.

[0963] Figure 45F A digital sign 7400 is shown mounted on a cylindrical column 7401. The digital sign 7400 includes a display section 7000 disposed along the curved surface of the column 7401.

[0964] exist Figure 45E and Figure 45F In this invention, a display device according to one aspect of the present invention can be applied to the display unit 7000. This enables the realization of a highly reliable electronic device.

[0965] The larger the display unit (7000), the more information it can provide at once. A larger display unit (7000) is also more likely to attract attention, which can improve the effectiveness of advertising.

[0966] By using a touch panel in the display unit 7000, not only can static or dynamic images be displayed on the display unit 7000, but users can also operate it intuitively, making it preferable. Furthermore, when used to provide information such as route information or traffic information, intuitive operation enhances ease of use.

[0967] like Figure 45E and Figure 45FAs shown, digital signage 7300 or 7400 preferably connects wirelessly with an information terminal device 7311 or 7411, such as a smartphone carried by the user. For example, advertising information displayed on display unit 7000 can be displayed on the screen of information terminal device 7311 or 7411. Furthermore, the display on display unit 7000 can be switched by operating information terminal device 7311 or 7411.

[0968] Alternatively, the game can be executed on the digital signage 7300 or 7400 using the screen of information terminal device 7311 or 7411 as the operating unit (controller). This allows multiple users to participate in the game simultaneously and enjoy the experience.

[0969] Figures 46A to 46G The electronic device shown includes a frame 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), a connection terminal 9006, a sensor 9007 (which has the function of measuring the following factors: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, tilt, vibration, odor, or infrared radiation), and a microphone 9008, etc.

[0970] Figures 46A to 46G The electronic device shown has various functions. For example, it may have the following functions: displaying various information (still images, moving images, or text images, etc.) on a display unit; a touch panel function; displaying a calendar, date, or time, etc.; controlling processing using various software (programs); wireless communication function; or reading and processing programs or data stored in a storage medium; etc. Note that the functions of the electronic device are not limited to the above functions, and it may have various functions. The electronic device may also include multiple display units. In addition, a camera or the like may be installed in the electronic device to enable it to have the following functions: capturing still or moving images and storing the captured images in a storage medium (external storage medium or storage medium built into the camera); and displaying the captured images on a display unit; etc.

[0971] The following is a detailed explanation. Figures 46A to 46G The electronic device shown.

[0972] Figure 46AThis is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example, as a smartphone. Note that a speaker 9003, a connection terminal 9006, a sensor 9007, etc., may also be included in the portable information terminal 9101. Furthermore, as a portable information terminal 9101, text or image information can be displayed on multiple surfaces. Figure 46A The image shows an example displaying three icons 9050. Alternatively, information 9051, shown as a dashed rectangle, can be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of received emails, SNS messages, phone calls, etc.; the subject of the email or SNS message; the sender's name; the date; the time; remaining battery level; and radio wave strength. Alternatively, icons 9050 can be displayed, for example, in the location where information 9051 is displayed.

[0973] Figure 46B This is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has the function of displaying information on three or more surfaces of the display unit 9001. Here, examples are shown where information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, when the portable information terminal 9102 is placed in a jacket pocket, the user can check information 9053 displayed in a position visible from above the portable information terminal 9102. For example, the user can check this display without taking the portable information terminal 9102 out of their pocket, thereby enabling them to determine, for example, whether to answer a phone call.

[0974] Figure 46C This is a perspective view of a tablet terminal 9103. The tablet terminal 9103 can, for example, execute various application software such as mobile phone, email, and article reading and editing, music playback, network communication, and computer games. The tablet terminal 9103 includes a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the frame 9000; operation keys 9005 serving as operation buttons on the left side of the frame 9000; and a connection terminal 9006 on the bottom surface.

[0975] Figure 46D This is a perspective view showing a watch-type portable information terminal 9200. The portable information terminal 9200 can be used, for example, as a smartwatch (registered trademark). Furthermore, the display surface of the display unit 9001 is curved, allowing display along its curved surface. Additionally, the portable information terminal 9200 can perform hands-free calls, for example, by communicating with a headset capable of wireless communication. Furthermore, by utilizing the connection terminal 9006, the portable information terminal 9200 can transmit data or charge with other information terminals. Charging can also be performed wirelessly.

[0976] Figures 46E to 46G This is a perspective view showing the foldable portable information terminal 9201. Additionally, Figure 46E This is a 3D view of the portable information terminal 9201 in its unfolded state. Figure 46G It is a 3D image of the folded state. Figure 46F From Figure 46E status and Figure 46G The portable information terminal 9201 is a three-dimensional representation of the state transitioning between different states. In its folded state, it is highly portable, while in its unfolded state, it offers excellent browsing capabilities due to its large, seamlessly integrated display area. The display unit 9001 included in the portable information terminal 9201 is supported by three frames 9000 connected by hinges 9055. The display unit 9001 can be bent, for example, within a radius of curvature of 0.1 mm or more and 150 mm or less.

[0977] This embodiment can be appropriately combined with other embodiments. Furthermore, in this specification, where multiple structural examples are shown in one embodiment, these structural examples can be appropriately combined.

[0978] [Example]

[0979] In this embodiment, refer to Figure 47 Figure 50 illustrates a light-emitting device 1 that can be used in one aspect of the present invention for a display device.

[0980] Figure 47 This is a diagram illustrating the structure of the 550A light-emitting device.

[0981] Figure 48 These are scanning transmission electron microscope images illustrating the cross-sectional structure of the manufactured light-emitting device 1.

[0982] Figure 49A and Figure 49B It is an optical microscope photograph illustrating the luminescence state of the manufactured light-emitting device 1.

[0983] Figure 50A and Figure 50B These are optical microscope photographs illustrating the luminescence state of the manufactured comparison device.

[0984] <Light-emitting device 1>

[0985] The light-emitting device 1 described in this embodiment has the same structure as the light-emitting device 550A (see reference). Figure 47 ).

[0986] The light-emitting device 550A includes an electrode 551A, an electrode 552A, and a unit 103A. The electrode 551A overlaps with the electrode 552A, and the unit 103A is sandwiched between the electrode 551A and the electrode 552A. The unit 103A contains a light-emitting material.

[0987] <<Structure of Light-Emitting Device 1>>

[0988] Table 1 shows the structure of the light-emitting device 1. The structural formula of the material used in the light-emitting device described in this embodiment is also shown below. Note that, for convenience, the subscripts and superscripts in the tables of this embodiment have been changed to normal text. For example, the subscripts in abbreviations and the superscripts in units have been changed to normal text in the tables. These descriptions in the tables can be converted to their original forms with reference to the descriptions in the specification.

[0989] [Table 1]

[0990]

[0991] [Chemical Formula 3]

[0992]

[0993] In this embodiment, indium tin oxide containing silicon or silicon oxide (ITSO), an alloy containing silver (Ag), palladium (Pd) and copper (Cu) (APC), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (PCBBiF), electron receiving material (OCHD-003), and 11-[(3'-dibenzothiophene-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furano[2,3-b]pyrazine are used. Light-emitting devices are manufactured using phosphorescent dopants (abbreviated as 11mDBtBPPnfpr), phosphorescent dopants (abbreviated as OCPG-006), 2-{3-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}dibenzo[f,h]quinoxaline (abbreviated as 2mPCCzPDBq), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2P), lithium fluoride (LiF), ytterbium (Yb), silver (Ag), magnesium (Mg), and indium gallium zinc oxide (IGZO).

[0994] In addition, a material consisting of a 10 nm thick film containing silicon nitride (SiNx: x is any number greater than 0) and a 200 nm thick film containing silicon oxynitride (SiON) is used for layer 521.

[0995] In addition, a material consisting of a 10 nm thick film containing Alq3 and a 10 nm thick film containing IGZO was used in SCRA2.

[0996] Furthermore, a 200 nm thick silicon oxynitride (SiON) film was used for layer 529. The SiON film was formed using PECVD. Specifically, 120 W of energy was used and the pressure was adjusted to 70 Pa, while silane (SiH4) at a flow rate of 75 sccm and nitric oxide (N2O) at a flow rate of 1200 sccm were introduced into the vacuum apparatus. The substrate temperature was also adjusted to 80 °C.

[0997] In addition, a Cu-containing film with a thickness of 200 nm was used for layer 553.

[0998] The cross-section of the manufactured light-emitting device was observed using a scanning transmission electron microscope (HD-2300 manufactured by Hitachi High Technology Co., Ltd.) (see reference). Figure 48 ).

[0999] The conductive layer 552 includes an electrode 552A, and the conductive layer 552 has a region that overlaps with the gap between adjacent light-emitting devices. Note that, although Figure 48 Adjacent light-emitting devices are not shown, but Figure 48 The right side shows the gap between adjacent light-emitting devices.

[1000] Layer 529 is sandwiched between conductive layer 552 and the gap, and layer 529 is in contact with the side of unit 103A. Layer 529 is insulating. In other words, conductive layer 552 overlaps with the gap disposed between adjacent light-emitting devices.

[1001] Layer 553 is sandwiched between conductive layer 552 and layer 529, and layer 553 is thicker than conductive layer 552. Layer 553 is conductive.

[1002] Furthermore, layer 529 has an opening 529A that overlaps with electrode 551A, and the opening 529A has a side surface. An angle θ1 exists between the side surface and the surface in contact with the substrate. θ1 is 32°. This suppresses the formation of cuts or cracks in the conductive layer 552 due to steps.

[1003] The luminescence state of the manufactured light-emitting device was observed using an optical microscope (see reference). Figure 49A Rectangular pixels with a length of 16μm and a width of 36μm, as well as rectangular pixels with a length of 13.25μm and a width of 17.75μm, all emit light with approximately uniform brightness (see reference). Figure 49B ).

[1004] (Comparative example)

[1005] Additionally, as a comparative example, a comparison device excluding layer 553 was fabricated. When observing the luminescence state using an optical microscope, uneven brightness was confirmed (see reference). Figure 50A Each rectangular pixel emits light with roughly uniform brightness, but some pixels emit light with a brightness different from their adjacent pixels (see reference). Figure 50B ).

[1006] Alternatively, it can be assumed that uneven brightness is caused by a decrease in conductivity due to cuts or cracks in the conductive layer 552 between adjacent pixels.

[1007] [Symbol Explanation]

[1008] ANO: Conductive film; C21: Capacitor; C22: Capacitor; CP: Conductive material; ELA: Light; ELB: Light; ELC: Light; ELX: Light; GD: Driving circuit; M21: Transistor; MPG: Conductive layer; MTCK: Transistor; N21: Node; N22: Node; REF: Film; REFA: Layer; REFB: Layer; REFC: Layer; RES: Resist; SD: Driving circuit; SW21: Switch; SW22: Switch; SW23: Switch; TX: Electrode; RX: Electrode; 14b: Substrate; 16b: Substrate; 17: Substrate; 18: Substrate; 37b: Display unit; 61B: Light-emitting device; 61G: Light-emitting device; 61R: Light-emitting device; 61W: Light-emitting device. Component, 63B: Light-emitting device, 63G: Light-emitting device, 63R: Light-emitting device, 63W: Light-emitting device, 71: Substrate, 73: Substrate, 80: Display area, 81B: Light, 81G: Light, 81R: Light, 83B: Light, 83G: Light, 83R: Light, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 100F: Display device, 100G: Display device, 100H: Display device, 100I: Display device, 100J: Display device, 100K: Display device, 100L: Display device, 100M: Display device, 100N: Display device, 100: Display device, 103A: Unit 103a: film, 103B: cell, 103b: film, 103C: cell, 103c: film, 103X: cell, 104A: layer, 104a: film, 104AB: gap, 104B: layer, 104b: film, 104C: layer, 104c: film, 104X: layer, 105A: layer, 105B: layer, 105C: layer, 105X: layer, 105: layer, 106A: intermediate layer, 106a: film, 106AB: gap, 106B: intermediate layer, 106b: film, 106C: intermediate layer, 106c: film, 106X: intermediate layer, 107: display section, 111X: layer, 112X: layer, 113X: layer, 117: light-shielding layer, 120: substrate, 12 2: Adhesive layer; 140: Connector; 142: Adhesive layer; 153: Insulating layer; 156: Adhesive layer; 162: Insulating layer; 163: Insulating layer; 164: Circuit; 165: Wiring; 166: Conductive layer; 168: Conductive layer; 169A: Conductive layer; 169B: Conductive layer; 171: Conductive layer; 172B: EL layer; 172G: EL layer; 172R: EL layer; 173: Conductive layer; 174: Common layer; 176: IC; 177: FPC; 183B: Color layer; 183G: Color layer; 183R: Color layer; 201: Transistor; 204: Connector; 205: Transistor; 209: Transistor; 210: Transistor; 211: Insulating layer; 213: Insulating layer.214: Insulating layer, 215: Insulating layer, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 230: Oxide semiconductor layer, 231i: Channel formation region, 231n: Low resistance region, 231: Semiconductor layer, 239: Conductive layer, 240: Capacitor, 241: Conductive layer, 242: Connector layer, 243: Insulating layer, 245: Conductive layer, 250: Insulating layer, 251: Conductive layer, 252: Conductive layer, 254: Insulating layer, 255a: Insulating layer, 255b: Insulating layer, 255c: Insulating layer, 256: Plug, 261: Insulating layer, 262: Insulating layer, 263: Insulating layer, 2 64: Insulating layer; 265: Insulating layer; 270: Sacrificial layer; 270B: Sacrificial layer; 270G: Sacrificial layer; 270R: Sacrificial layer; 271: Protective layer; 272: Insulating layer; 273: Protective layer; 274a: Conductive layer; 274b: Conductive layer; 274: Connector; 275: Connector; 276: Gap; 280: Display module; 290: FPC; 301A: Substrate; 301B: Substrate; 301: Substrate; 310A: Transistor; 310B: Transistor; 310: Transistor; 311: Conductive layer; 312: Low resistance region; 313: Insulating layer; 314: Insulating layer; 315: Component separation layer; 320A: Transistor; 320B: Transistor; 320: Transistor. 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 327: Conductive layer, 328: Insulating layer, 329: Insulating layer, 331: Substrate, 332: Insulating layer, 335: Insulating layer, 336: Insulating layer, 341: Conductive layer, 342: Conductive layer, 343: Connector, 344: Insulating layer, 345: Insulating layer, 346: Insulating layer, 347: Bump, 348: Adhesive layer, 400d: Transistor, 410: Substrate, 412: Component separation layer, 413: Semiconductor region, 414a: Low resistance region, 414b: Low resistance region, 415: Insulating layer, 416: Conductive layer, 417: Insulating layer, 420: Insulating layer, 4 22: Insulating layer; 424: Insulating layer; 426: Insulating layer; 428: Conductive layer; 430: Conductive layer; 450: Insulating layer; 452: Insulating layer; 454: Insulating layer; 456: Conductive layer; 510: Substrate; 513: Insulating layer; 514: Conductive layer; 519B: Terminal; 520: Functional layer; 521: Layer; 528A: Opening; 528B: Opening; 528C: Opening; 528: Layer; 529A: Opening; 529AS: Side surface; 529B: Opening; 529BS: Side surface; 529C: Opening; 529CON: Opening; 529: Layer; 530A: Pixel circuit; 530B: Pixel circuit; 530C: Pixel circuit; 540: Functional layer.550A: Light-emitting device, 550B: Light-emitting device, 550C: Light-emitting device, 550X: Light-emitting device, 551A: Electrode, 551AB: Gap, 551B: Electrode, 551C: Electrode, 551X: Electrode, 551: Film, 552A: Electrode, 552B: Electrode, 552C: Electrode, 552X: Electrode, 552: Conductive layer, 553A: Opening, 553AS: Side surface, 553B: Opening, 553BS: Side surface, 553C: Opening, 553: Layer, 573: Insulating layer, 574: Insulating layer, 581: Insulating layer, 591A: Opening, 591B: Opening, 592: Insulating layer, 594: Insulating layer, 596: Conductive layer, 598: 599: Insulating layer; 607: Adhesive layer; 610: Substrate; 611a: Conductive layer; 611b: Conductive layer; 611c: Conductive layer; 613a: Layer; 613b: Layer; 613c: Layer; 614: Common layer; 615: Common electrode; 618a: Sacrificial layer; 620: Component layer; 625: Insulating layer; 630: Component layer; 631: Protective layer; 640: Connector; 650B: Light-emitting element; 650G: Light-emitting element; 650R: Light-emitting element; 650: Light-emitting element; 660: Component layer; 670: Wiring layer; 700: Display device; 702A: Pixel; 702B: Pixel; 702C: Pixel; 703: Pixel; 731: Display area; 732 6500: Sealed area; 6501: Electronic device; 6502: Frame; 6503: Display unit; 6504: Power button; 6505: Button; 6506: Speaker; 6507: Microphone; 6508: Camera; 6510: Light source; 6511: Protective component; 6512: Display panel; 6513: Optical component; 6514: Touch sensor panel; 6515: FPC; 6516: IC; 6517: Printed circuit board; 6518: Battery; 6700A: Electronic device; 6700B: Electronic device; 6721: Frame; 6723: Mounting part; 6727: Earphone part; 6750: Earphone; 6751: Display panel; 6753: Optical component; 6756: Display Area, 6757: Frame, 6758: Nose pad, 6800A: Electronic device, 6800B: Electronic device, 6820: Display unit, 6821: Frame, 6822: Communication unit, 6823: Mounting unit, 6824: Control unit, 6825: Imaging unit, 6827: Headphone unit, 6832: Lens, 7000: Display unit, 7100: Television unit, 7101: Frame, 7103: Stand, 7111: Remote control, 7200: Notebook computer, 7211: Frame, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Frame, 7303: Speaker, 7311: Information terminal equipment,7400: Digital signage; 7401: Column; 7411: Information terminal equipment; 9000: Frame; 9001: Display unit; 9002: Camera; 9003: Speaker; 9005: Operation keys; 9006: Connection terminal; 9007: Sensor; 9008: Microphone; 9050: Icon; 9051: Information; 9052: Information; 9053: Information; 9054: Information; 9055: Hinge; 9101: Portable information terminal; 9102: Portable information terminal; 9103: Tablet terminal; 9200: Portable information terminal; 9201: Portable information terminal.

Claims

1. A display device, comprising: First light-emitting device; Second light-emitting device; First conductive layer; First layer; as well as The second floor, The first light-emitting device includes a first electrode, a second electrode, and a first unit. The first unit is sandwiched between the first electrode and the second electrode. The first unit contains a luminescent material. The second light-emitting device is adjacent to the first light-emitting device. The second light-emitting device includes a third electrode, a fourth electrode, and a second unit. The third electrode is adjacent to the first electrode. The third electrode is configured such that a first gap is sandwiched between it and the first electrode. The second unit is sandwiched between the third electrode and the fourth electrode. The second unit contains a luminescent material. The first conductive layer includes the second electrode and the fourth electrode. The first conductive layer has a region that overlaps with the first gap. The first layer is sandwiched between the first conductive layer and the first gap. The first layer is in contact with the side of the first unit and the side of the second unit. The first layer is insulating. The second layer is sandwiched between the first conductive layer and the first layer. The second layer is thicker than the first conductive layer. Furthermore, the second layer is conductive.

2. The display device according to claim 1, The first layer has a first opening and a second opening. The first opening overlaps with the first electrode. The first opening has a first side surface. The first side has an angle greater than 0° and less than 90° with the surface in contact with the substrate. The second opening overlaps with the third electrode. The second opening has a second side surface. Furthermore, the second side has an angle greater than 0° and less than 90° between it and the surface in contact with the substrate.

3. The display device according to claim 2, The second layer has a third opening and a fourth opening. The third opening overlaps with the first opening. The third opening is larger than the first opening. The fourth opening overlaps with the second opening. Furthermore, the fourth opening is larger than the second opening.

4. The display device according to claim 3, The second layer has a third side surface at the third opening. The third side surface has an angle greater than 0° and less than 90° with the surface in contact with the substrate. The second layer has a fourth side at the fourth opening. Furthermore, the fourth side surface has an angle greater than 0° and less than 90° with the surface in contact with the substrate.

5. The display device according to claim 1, comprising: The third layer, The third layer includes the fourth and fifth layers. The third layer has a region that overlaps with the first gap. The fourth layer is sandwiched between the second electrode and the first unit. The fifth layer is sandwiched between the fourth electrode and the second unit. The third layer is sandwiched between the first conductive layer and the second layer in the region overlapping the first gap. Furthermore, the third layer contains a material with electron injection properties.

6. The display device according to claim 1, The first light-emitting device includes a sixth layer. The sixth layer is sandwiched between the first unit and the first electrode. The sixth layer contains a material with cavitation properties. The second light-emitting device includes a seventh layer. The seventh layer is sandwiched between the second unit and the third electrode. The seventh layer is configured such that a second gap is sandwiched between it and the sixth layer. The second gap overlaps with the first gap. Furthermore, the seventh layer contains a material with cavitation properties.

7. The display device according to claim 1, further comprising: Display area; as well as Second conductive layer, The display area includes the first light-emitting device and the second light-emitting device. The first layer has a fifth opening. The fifth opening is located on the outside of the display area. The second conductive layer is sandwiched between the second conductive layer and the first conductive layer. The first layer is sandwiched between the second conductive layer and the second layer. The second conductive layer has a region that overlaps with the fifth opening. Furthermore, the second conductive layer is electrically connected to the first conductive layer.

8. A display module, comprising: The display device according to any one of claims 1 to 7; as well as At least one of a connector and an integrated circuit.

9. An electronic device, comprising: The display device according to any one of claims 1 to 7; as well as At least one of the following: battery, camera, speaker, and microphone.

Images