Ion implantation apparatus and ion implantation method

Abstract

The invention relates to an ion implantation device and an ion implantation method. The ion implantation apparatus includes an ion source and an drain structure. The ion source is provided with a slit; the slit is used for emitting an ion beam. The absorption electrode structure is arranged on one side of the ion source emitting the ion beam and is fixed at the arrangement position. The absorption electrode structure comprises an ion beam entrance port, an ion beam exit port, an absorption electrode and an electromagnetic lens. The ion beam entrance port is arranged opposite to the slit, and the area of the ion beam entrance port is larger than the maximum cross sectional area of the ion beam. The attraction electrode is used for capturing an ion beam emitted by the ion source, so that the ion beam enters from the ion beam entrance port. And the electromagnetic lens is used for generating ion deflection force after being electrified, so that the ion beams are aligned to the ion beam exit port after being converged. According to the invention, the ion extraction rate of an extraction link in ion implantation is improved, and ion waste and ion implantation capacity loss are effectively reduced, so that the success rate of beam tuning is improved.

Description

Technical Field

[0001] This disclosure relates to the field of ion implantation, and in particular to an ion implantation apparatus and an ion implantation method. Background Technology

[0002] Ion implantation is a method of introducing a controllable number of impurities into a substrate to alter its electrical properties. The ion implanter is a crucial piece of equipment in the semiconductor manufacturing process, and its extraction rate is closely related to cost control and production speed. Therefore, improving the extraction rate of the absorber structure in the ion implantation process is of paramount importance. Summary of the Invention

[0003] Based on this, the present disclosure provides an ion implantation device and an ion implantation method to improve the ion extraction rate in the extraction stage of ion implantation, effectively reduce ion waste and ion implantation capacity loss, thereby improving the success rate of beam tuning.

[0004] To achieve the above objectives, in one aspect, some embodiments of this disclosure provide an ion implantation apparatus. The ion implantation apparatus includes an ion source and an absorber structure. The ion source has a slit for emitting an ion beam. The absorber structure is disposed on one side of the ion source emitting the ion beam and fixed in its position. The absorber structure includes: an ion beam inlet and an ion beam outlet, an attracting electrode, and an electromagnetic lens. The ion beam inlet is disposed opposite to the slit, and the area of ​​the ion beam inlet is larger than the maximum cross-sectional area of ​​the ion beam. The attracting electrode is used to capture the ion beam emitted by the ion source, so that the ion beam enters from the ion beam inlet. The electromagnetic lens is used to generate an ion deflection force when energized, so that the ion beam is focused and aligned with the ion beam outlet.

[0005] In some embodiments, the attraction electrode includes a first electrode and a second electrode disposed opposite to each other along a first direction, the first direction intersecting the transmission direction of the ion beam. Each electrode is provided with a corresponding electromagnetic lens. For example, the first electrode is provided with a first electromagnetic lens, which generates an ion deflection force toward a second electromagnetic lens; the second electrode is provided with a second electromagnetic lens, which generates an ion deflection force toward the first electromagnetic lens.

[0006] In some embodiments, the transmission direction of the ion beam is a first horizontal direction parallel to the horizontal plane, and the first direction is a vertical direction perpendicular to the first horizontal direction; or, the first direction is a second horizontal direction perpendicular to the first horizontal direction.

[0007] In some embodiments, the first electromagnetic lens includes a first magnetic core and a first electromagnetic coil wound in a spiral shape around the outside of the first magnetic core; the second electromagnetic lens includes a second magnetic core and a second electromagnetic coil wound in a spiral shape around the outside of the second magnetic core.

[0008] In some embodiments, the attraction electrode extends along the transmission direction of the ion beam. An electromagnetic lens is disposed on one side of the attraction electrode or within the opening region of the attraction electrode.

[0009] In some embodiments, the attractor structure further includes a housing. The housing includes a closed sidewall surrounding the ion beam in a plane perpendicular to the transmission direction of the ion beam. The attractor electrode and the electromagnetic lens are both disposed inside the sidewall of the housing.

[0010] In some embodiments, the housing further includes two end faces connected to its sidewalls and disposed opposite to each other along the transmission direction of the ion beam; wherein the attraction electrode is disposed only inside the sidewall of the housing or the attraction electrode extends to cover the end face; the ion beam inlet and ion beam outlet also penetrate the corresponding end faces respectively.

[0011] In some embodiments, the geometric center of the slit is located on the same straight line as the geometric center of the ion beam inlet and the geometric center of the ion beam outlet, and the straight line is parallel to the transmission direction of the ion beam.

[0012] In some embodiments, the ratio of the area of ​​the ion beam inlet to the area of ​​the slit is greater than or equal to 4.

[0013] On the other hand, some embodiments of this disclosure provide an ion implantation method, including an ionization phase and an extraction phase.

[0014] During the ionization phase, the ion source generates an ion beam and emits it through a slit.

[0015] During the extraction stage, a fixed absorber structure attracts the ion beam through its ion beam inlet by an attracting electrode. The electromagnetic lens of the absorber structure generates an ion deflection force, causing the ion beam to converge and align with the ion beam outlet of the absorber structure before being emitted. The absorber structure is positioned and fixed on one side of the ion source ion beam emission point; the ion beam inlet is opposite to the slit, and its area is larger than the maximum cross-sectional area of ​​the ion beam.

[0016] In some embodiments, the attraction electrode includes a first electrode and a second electrode disposed opposite to each other along a first direction, and each electrode is provided with a corresponding electromagnetic lens; for example, the first electrode is provided with a first electromagnetic lens, and the second electrode is provided with a second electromagnetic lens. The first direction intersects with the transmission direction of the ion beam.

[0017] Accordingly, the generation of ion deflection force by the electromagnetic lens through the absorber structure includes:

[0018] The edge ions near the first electromagnetic lens in the ion beam are controlled to converge toward the center of the ion beam by the first electromagnetic lens.

[0019] The second electromagnetic lens controls the convergence of edge ions near the second electromagnetic lens towards the center of the ion beam.

[0020] The embodiments disclosed herein may have, or at least have, the following advantages:

[0021] In this embodiment, the absorber structure is disposed on one side of the ion beam emitted from the ion source and its position is fixed. Since the ion beam inlet is positioned opposite the slit, the area of ​​the ion beam inlet is larger than the maximum cross-sectional area of ​​the ion beam. This facilitates the capture of the ion beam generated by the ion source by the attracting electrode of the absorber structure, allowing the ion beam to enter the interior of the absorber structure from the ion beam inlet. Then, the ion beam is focused by the ion deflection force generated by the electromagnetic lens after energization, resulting in a highly convergent ion beam, which is then aligned with the ion beam outlet. Thus, this embodiment eliminates the need to adjust the position and orientation of the absorber structure, allowing for complete capture and focusing of the ion beam using a fixed-position absorber structure. This ensures a high ion extraction rate (e.g., ion extraction rate of 95% or higher, up to approximately 100%) while avoiding ion waste and ion implantation capacity loss caused by adjusting the absorber structure's position, thereby effectively improving the success rate of beam tuning.

[0022] Details of one or more embodiments of this disclosure are set forth in the following drawings and description. Other features, objects, and advantages of this disclosure will become apparent from the specification, drawings, and claims. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments or conventional technologies of this disclosure, the accompanying drawings used in the description of the embodiments or conventional technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic cross-sectional view of an ion implantation device provided in some embodiments along the XZ plane;

[0025] Figure 2 This is a schematic cross-sectional view along the XY plane of another ion implantation device provided in some embodiments;

[0026] Figure 3 This is a cross-sectional schematic diagram along the XY plane of yet another ion implantation device provided in some embodiments;

[0027] Figure 4 This is a cross-sectional schematic diagram along the XY plane of yet another ion implantation device provided in some embodiments;

[0028] Figure 5 This is a cross-sectional schematic diagram along the XY plane of yet another ion implantation device provided in some embodiments;

[0029] Figure 6 This is a schematic diagram illustrating the principle of the ion beam focusing path of an ion implantation device provided in some embodiments;

[0030] Figure 7 for Figure 6 A three-dimensional schematic diagram of an attraction electrode in an ion implantation device is shown.

[0031] Figure 8 Figure (a) in the middle is Figure 6 The diagram shows a cross-sectional view of an absorber structure along the YZ plane. Figure 8 Figure (b) is Figure 6 A schematic cross-sectional view of an absorber structure along the YZ plane is shown.

[0032] Figure 9 This is a flowchart of an ion implantation method provided in some embodiments.

[0033] Explanation of reference numerals in the attached figures:

[0034] 1-Ion source, 11-Slit, 2-Absorber structure, 20-Shell, 21-Ion beam inlet, 22-Attractor electrode, 221-First electrode, 222-Second electrode, 23-Electromagnetic lens, 231-First electromagnetic lens, 231a-First magnetic core, 231b-First electromagnetic coil, 232-Second electromagnetic lens, 232a-Second magnetic core, 232b-Second electromagnetic coil, 24-Ion beam outlet, 25-Insulating medium, 3-DC power supply. Detailed Implementation

[0035] To facilitate understanding of this disclosure, a more complete description will now be given with reference to the accompanying drawings, in which preferred embodiments of the present disclosure are shown. However, this disclosure may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this disclosure.

[0037] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, region, layer, doping type, or portion discussed below may be referred to as a second element, component, region, layer, or portion.

[0038] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “comprise” and / or “comprising” are used in this specification, the presence of the stated feature, integer, step, operation, element, and / or part is established, but the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0039] Embodiments of the invention are described herein with reference to cross-sectional views that serve as schematic diagrams of preferred embodiments (and intermediate structures) of the present disclosure, thus allowing for the anticipation of variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances. Embodiments of the present disclosure should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing techniques. Therefore, the regions shown in the figures are substantially schematic, and their shapes do not represent the actual shapes of regions of the device, nor do they limit the scope of the present disclosure.

[0040] In related ion implantation processes, to achieve the ideal ion extraction rate when extracting ions emitted from the ion source, a considerable amount of time is often required to move or rotate the absorber structure vertically, horizontally, and vertically to find the optimal extraction position. However, this position adjustment process of the absorber structure is often accompanied by ion waste and loss of ion implantation capacity, which can easily reduce the success rate of beam tuning.

[0041] Based on this, the present disclosure provides an ion implantation device and an ion implantation method to improve the ion extraction rate in the extraction stage of ion implantation, effectively reduce ion waste and ion implantation capacity loss, thereby improving the success rate of beam tuning.

[0042] In some embodiments, please refer to Figure 1 The ion implantation apparatus of some embodiments of this disclosure includes an ion source 1 and an absorber structure 2. The ion source 1 has a slit 11 for emitting an ion beam. The absorber structure 2 is disposed on the side of the ion source 1 from which the ion beam is emitted and is fixed in its position. The absorber structure 2 includes an ion beam inlet 21, an ion beam outlet 24, an attracting electrode 22, and an electromagnetic lens 23. The ion beam inlet 21 is disposed opposite to the slit 11, and the area of ​​the ion beam inlet 21 is larger than the maximum cross-sectional area of ​​the ion beam. The attracting electrode 22 is used to capture the ion beam emitted from the ion source 1, allowing the ion beam to enter from the ion beam inlet 21. The electromagnetic lens 23 is used to generate an ion deflection force when energized, so that the ion beam is focused and aligned with the ion beam outlet 24.

[0043] Here, it can be understood that the attracting electrode 22 needs to be energized before the attracting electrode structure 2 can perform the ion extraction function.

[0044] In some examples, the ratio of the area of ​​the ion beam inlet 21 to the cross-sectional area of ​​the ion beam is greater than or equal to 4.

[0045] For example, the ratio of the area of ​​the ion beam inlet 21 to the cross-sectional area of ​​the ion beam is 4, 5, 6, or 8, etc.

[0046] For example, the outline shape of the ion beam inlet 21 can be circular, elliptical, or rectangular, etc., and the outline shape of the ion beam inlet 21 is, for example, rectangular.

[0047] In some examples, please refer to Figure 2 and Figure 3 The attracting electrode structure 2 also includes an insulating medium 25 located between the attracting electrode 22 and the electromagnetic lens 23.

[0048] Optionally, the attraction electrode 22 can be a single-layer conductive film or a multilayer conductive film with alternating dielectric layers.

[0049] In some embodiments, please continue reading Figure 1The attraction electrode 22 includes a first electrode 221 and a second electrode 222 disposed opposite to each other along a first direction (e.g., the Z direction). The first direction (e.g., the Z direction) intersects, for example, or is orthogonal to, the transmission direction of the ion beam (e.g., the X direction). Each electrode is provided with a corresponding electromagnetic lens. For example, the first electrode 221 is provided with a first electromagnetic lens 231, which is used to generate an ion deflection force toward a second electromagnetic lens 232; the second electrode 222 is provided with a second electromagnetic lens 232, which is used to generate an ion deflection force toward the first electromagnetic lens 231.

[0050] For example, the attraction electrode 22 extends along the transmission direction of the ion beam (e.g., the X direction). The electromagnetic lens 23 is disposed on one side of the attraction electrode 22 or in the opening area of ​​the attraction electrode 22.

[0051] In some examples, please refer to [link / reference]. Figure 2 and Figure 3 The attractor structure 2 also includes a housing 20. The housing 20 includes a closed sidewall surrounding a plane perpendicular to the transmission direction of the ion beam (e.g., the YZ plane). The attractor electrode 22 and the electromagnetic lens 23 are both disposed inside the sidewall of the housing 20.

[0052] For example, the attraction electrode 22 can be integrally bonded to the inner side wall of the housing 20 after preparation; or, the attraction electrode 22 can be directly prepared to the inner side wall of the housing 20 by film formation methods such as sputtering or coating. Similarly, the electromagnetic lens 23 can also be integrally bonded to the attraction electrode 22 after preparation, or it can be directly prepared to the attraction electrode 22.

[0053] In some examples, the electromagnetic lens 23 can be fixed to the side of the attraction electrode 22 away from the sidewall of the housing 20, for example... Figure 2 As shown in the figure; or, in other examples, the electromagnetic lens 23 may be fixed within the opening area of ​​the attraction electrode 22, for example... Figure 3 As shown in the image.

[0054] In some examples, please refer to Figure 4 and Figure 5 The housing 20 further includes two end faces connected to its sidewalls and disposed opposite to each other in the direction of ion beam transmission (e.g., the X direction). Optionally, the attraction electrode 22 may not cover the end faces; for example, the attraction electrode 22 may be disposed only on the inner sidewall of the housing 20. Figure 4 As shown in the diagram. Alternatively, the attraction electrode 22 may extend to cover the end face; for example, the attraction electrode 22 may have the same contour shape as a portion of the housing 20, such as... Figure 5 As shown in the image.

[0055] Accordingly, please continue reading Figure 4and Figure 5 The ion beam inlet 21 and the ion beam outlet 24 also penetrate the corresponding end faces of the housing 20.

[0056] For example, the housing 20 can be configured as a cylindrical shell structure or a prismatic shell structure with its axis parallel to the direction of ion beam transmission.

[0057] For example, the first electrode 221 and the second electrode 222 can be an integral structure.

[0058] For example, the attraction electrode 22 and the housing 20 may have the same profile shape; that is, the profile shape of the attraction electrode 22 may match the housing 20.

[0059] It is understood that in related technologies, the absorber structure usually includes a motion mechanism to control the absorber structure to move up, down, left, right, or rotate. However, in this embodiment, the absorber structure 2 is disposed on one side of the ion beam emitted from the ion source 1 and fixed in the disposed position. The absorber structure 2 may also include a fixing structure to fix and connect the housing 20, the attracting electrode 22, or the insulating medium covering the attracting electrode 22, etc. The fixing structure can be, for example, a fixing frame or a fixing rod, to ensure that the absorber structure 2 can be effectively fixed. This embodiment does not limit this aspect.

[0060] In this embodiment, the absorber structure 2 is disposed on one side of the ion beam emitted from the ion source 1 and its position is fixed. Since the ion beam inlet 21 is positioned opposite the slit, and the area of ​​the ion beam inlet 21 is larger than the maximum cross-sectional area of ​​the ion beam, the ion beam generated by the ion source 1 is easily captured by the attracting electrode 22 of the absorber structure 2 and enters the interior of the absorber structure 2 from the ion beam inlet 21. Then, through the ion deflection force generated by the electromagnetic lens 23 after energization, the ion beam can be focused to obtain a highly convergent ion beam, and the focused ion beam is aligned with the ion beam outlet 24. Thus, this embodiment does not require adjustment of the position and orientation of the absorber structure 2; the fixed-position absorber structure 2 can completely capture and focus the ion beam. This avoids ion waste and ion implantation capacity loss caused by adjusting the position of the absorber structure 2 while ensuring a high ion extraction rate (e.g., ion extraction rate of 95% or higher, up to approximately 100%), thereby effectively improving the success rate of beam tuning.

[0061] In some examples, please refer to [link / reference]. Figures 1-5 The ion implantation device also includes a DC power supply 3. The DC power supply 3 includes a positive electrode and a negative electrode; wherein the positive electrode is connected to the attraction electrode 22, and the negative electrode is connected to the ion source 1.

[0062] In some embodiments, please combine Figure 1 and Figure 6 Understanding is that the electromagnetic lens 23 includes a first electromagnetic lens 231 and a second electromagnetic lens 232 located opposite each other in a first direction (e.g., the Z direction) and inside the sidewall of the housing 20. The first direction (e.g., the Z direction) intersects, for example, the transmission direction of the ion beam (e.g., the X direction). The first electromagnetic lens 231 generates an ion deflection force toward the second electromagnetic lens 232; the second electromagnetic lens 232 generates an ion deflection force toward the first electromagnetic lens 231.

[0063] In some examples, please refer to [link / reference]. Figure 1 and Figure 6 The first electromagnetic lens 231 includes a first magnetic core 231a and a first electromagnetic coil 231b spirally wound around the outside of the first magnetic core 231a; the second electromagnetic lens 232 includes a second magnetic core 232a and a second electromagnetic coil 232b spirally wound around the outside of the second magnetic core 232a.

[0064] It should be noted that in this embodiment, the direction of the first magnetic field can be controlled by controlling the direction of the current in the first electromagnetic coil 231b; and the direction of the second magnetic field can be controlled by controlling the direction of the current in the second electromagnetic coil 232b. For example, the direction of the first magnetic field generated by the first electromagnetic lens 231 is as follows: Figure 6 As shown by the dashed arrow a1 in the diagram; the direction of the second magnetic field generated by the second electromagnetic lens 232 is as follows. Figure 6 As shown by the dashed arrow a2 in the diagram; the first magnetic field and the second magnetic field are centrally symmetrical along the centerline of the attracting electrode 22 in the ion beam transmission direction. Furthermore, according to the left-hand rule, the ion beam, under the influence of the first magnetic field, experiences an ion deflection force towards the second electromagnetic lens 232, and under the influence of the second magnetic field, it experiences an ion deflection force towards the first electromagnetic lens 231, thus effectively converging at the centerline of the attracting electrode 22 in the ion beam transmission direction.

[0065] The embodiments disclosed herein do not limit the material or winding density of the first electromagnetic coil 231b and the second electromagnetic coil 232b. The specific settings can be selected according to the requirements to ensure that the aforementioned convergence function can be achieved.

[0066] It should be added that, in this embodiment of the present disclosure, the control of the current in the first electromagnetic coil 231b and the second electromagnetic coil 232b can be achieved by independently powering the first electromagnetic coil 231b and the second electromagnetic coil 232b; that is, there is no connection between the first electromagnetic coil 231b and the attraction electrode 22, and between the second electromagnetic coil 232b and the attraction electrode 22.

[0067] For example, the first electromagnetic coil 231b and the second electromagnetic coil 232b are each independently connected to an external power supply circuit. This embodiment does not specifically limit the structure of the external power supply circuit, as long as it ensures that the first electromagnetic coil 231b and the second electromagnetic coil 232b can be independently powered.

[0068] In this embodiment, the ion beam is deflected by the first electromagnetic lens 231 and the second electromagnetic lens 232, causing it to converge toward the centerline of the attracting electrode 22 in the ion beam transmission direction. This enables the ion beam captured by the absorber structure 2 to be effectively converged and emitted, effectively improving the convergence of the ion beam in the absorber structure 2. This is beneficial for screening, accelerating and implanting the ion beam in the subsequent stages of the ion implantation process.

[0069] In some embodiments, please refer to Figures 1-6 The transmission direction of the ion beam is a first horizontal direction (e.g., the X direction) parallel to the horizontal plane.

[0070] For example, the first electrode 221 and the second electrode 222 are an integral structure; the outline shape of the attraction electrode 22 can be a cuboid, cube, or cylinder, etc. Please refer to [link / reference]. Figure 7 In some examples, the outline shape of the attraction electrode 22 is, for example, a cylinder.

[0071] In some examples, please combine Figure 6 , Figure 7 and Figure 8 As illustrated in diagram (a), the first direction is a vertical direction (e.g., the Z direction) perpendicular to the first horizontal direction (e.g., the X direction). Accordingly, as... Figure 8 As shown in Figure (a), the first electromagnetic lens 231 and the second electromagnetic lens 232 are respectively disposed on the opposite side walls of the attraction electrode 22 in the vertical direction (e.g., the Z direction).

[0072] In other examples, please combine Figure 7 and Figure 8 As illustrated in diagram (b), the first direction is a second horizontal direction (e.g., the Y direction) that is perpendicular to the first horizontal direction (e.g., the X direction). Correspondingly, as... Figure 8 As shown in Figure (b), the first electromagnetic lens 231 and the second electromagnetic lens 232 are respectively disposed on opposite side walls of the attraction electrode 22 in the second horizontal direction (e.g., the Y direction).

[0073] It should be added that, Figure 8 Figures (a) and (b) are only used to illustrate the relative positional distribution between the electromagnetic lenses (231 and 232) and the attraction electrode 22, and do not limit whether the electromagnetic lenses (231 and 232) are connected to the attraction electrode 22.

[0074] In some other examples, the number of electromagnetic lenses 23 may be more, for example, four, and they may be respectively disposed on the two opposite side walls of the attraction electrode 22 in the vertical direction (e.g., the Z direction) and on the two opposite side walls in the second horizontal direction (e.g., the Y direction), which is not limited in this disclosure.

[0075] In some embodiments, please refer to Figures 1-6 The geometric center of slit 11 and the geometric center of ion beam inlet 21 are located on the same straight line, and the straight line is parallel to the transmission direction of the ion beam; the area of ​​ion beam inlet 21 is larger than the area of ​​slit 11; and / or, the geometric center of slit 11, the geometric center of ion beam inlet 21, and the geometric center of ion beam outlet 24 are located on the same straight line, and the straight line is parallel to the transmission direction of the ion beam, and the area of ​​ion beam inlet 21 is larger than the area of ​​ion beam outlet 24.

[0076] For example, the geometric center of the slit 11 is located on the same straight line as the geometric center of the ion beam inlet 21, and this straight line is the axis of the attraction electrode 22 in the ion beam transmission direction.

[0077] In some examples, the ratio of the area of ​​the ion beam inlet 21 to the area of ​​the slit 11 is greater than or equal to 4. This helps ensure that the absorber structure 2 can achieve an ion extraction rate of approximately 100%.

[0078] For example, the ratio of the area of ​​the ion beam inlet 21 to the area of ​​the slit 11 can be 4, 5, 6 or 8, etc.

[0079] For example, the geometric center of the slit 11 is on the same straight line as the geometric center of the ion beam inlet 21 and the geometric center of the ion beam outlet 24, and this straight line is the axis of the attraction electrode 22 in the ion beam transmission direction.

[0080] In some examples, the ratio of the area of ​​the ion beam inlet 21 to the area of ​​the ion beam outlet 24 is greater than or equal to 2. This helps to ensure that the ion beam extracted by the absorber structure 2 can be emitted smoothly and with near-loss-free efficiency.

[0081] For example, the ratio of the area of ​​the ion beam inlet 21 to the area of ​​the ion beam outlet 24 can be 2, 3, 4, 5, 6 or 8, etc.

[0082] In some examples, the profile shape of the ion beam inlet 21 is the same as that of the slit 11, but the profile size of the ion beam inlet 21 is different from that of the slit 11.

[0083] In some examples, the outline shape of the ion beam exit port 24 is the same as that of the ion beam inlet port 21, but the outline size of the ion beam exit port 24 is different from that of the ion beam inlet port 21.

[0084] For example, the outline shape of slit 11 can be rectangular. Correspondingly, the outline shape of ion beam inlet 21 is a rectangle with the same length-to-width ratio as slit 11 but with a different area. Correspondingly, the outline shape of ion beam outlet 24 is a rectangle with the same length-to-width ratio as ion beam inlet 21 but with a different area.

[0085] In this embodiment, by aligning the geometric center of the slit 11 and the geometric center of the ion beam inlet 21 on the same straight line parallel to the transmission direction of the ion beam, and by making the area of ​​the ion beam inlet 21 larger than the area of ​​the slit 11, it is advantageous to ensure that the ion beam emitted from the slit 11 is completely captured by the ion beam inlet 21 and enters the absorber electrode, guaranteeing an extraction rate of approximately 100%. This avoids ion waste and ion implantation capacity loss in the ion implantation extraction process, thereby effectively improving the success rate of beam tuning.

[0086] In this embodiment, by aligning the geometric center of the slit 11 with the geometric centers of the ion beam inlet 21 and the ion beam outlet 24 on the same straight line parallel to the ion beam propagation direction, it is advantageous to ensure that the ion beam captured by the ion beam inlet 21 and converged inside the absorber electrode is completely emitted from the ion beam outlet 24. This avoids the problem of ion waste caused by incomplete ion beam emission, thereby effectively improving the success rate of beam tuning.

[0087] In some embodiments, the ion implantation apparatus further includes a magnetic analyzer, an accelerating tube, and an implantation chamber. The magnetic analyzer is used to screen the converging ion beam emitted from the ion beam exit port 24; the accelerating tube is used to accelerate the converging ion beam screened by the magnetic analyzer to obtain a high-speed ion beam; and the implantation chamber is used to implant the high-speed ion beam into the target material.

[0088] For example, an ion implantation device includes an ion implanter, such as a low-current ion implanter, a low-energy high-current ion implanter, or a high-energy ion implanter.

[0089] For example, target materials include, but are not limited to, wafers.

[0090] This disclosure also provides an ion implantation method according to some embodiments. This ion implantation method can be implemented using the ion implantation apparatus provided in the above embodiments. This ion implantation method also possesses all the technical advantages of the aforementioned ion implantation apparatus. It should be noted that the parts that are the same as or corresponding to those in the above embodiments can be referred to the corresponding descriptions in the above embodiments, and will not be described in detail below.

[0091] In some embodiments, please refer to Figure 5The ion implantation method includes the following ionization stage S100 and extraction stage S200.

[0092] In the S100 ionization phase, the ion source generates an ion beam and emits it through a slit.

[0093] S200, in the extraction stage, the fixed absorber structure attracts the ion beam through the ion beam inlet of the absorber structure by attracting the electrode, and generates ion deflection force through the electromagnetic lens of the absorber structure so that the ion beam is focused and aligned with the ion beam outlet and emitted from the ion beam outlet; wherein, the absorber structure is disposed on one side of the ion beam emitted from the ion source and is fixed in the disposed position, the ion beam inlet is disposed opposite to the slit, and the area of ​​the ion beam inlet is larger than the maximum cross-sectional area of ​​the ion beam.

[0094] In some embodiments, please refer to Figure 1 The geometric center of slit 11 and the geometric center of ion beam inlet 21 are located on the same straight line, and the straight line is parallel to the direction of ion beam transmission. The ratio of the area of ​​ion beam inlet 21 to the area of ​​slit 11 is greater than or equal to 4, such as 4, 5, 6, or 8. This helps to ensure that the absorber structure 2 can achieve an ion extraction rate of approximately 100%.

[0095] In some embodiments, please continue reading Figure 1 The attraction electrode 22 includes a first electrode 221 and a second electrode 222 disposed opposite to each other along a first direction (e.g., the Z direction). The first direction (e.g., the Z direction) intersects, for example, or is orthogonal to, the transmission direction of the ion beam (e.g., the X direction). Each electrode is provided with a corresponding electromagnetic lens. For example, the first electrode 221 is provided with a first electromagnetic lens 231, and the second electrode 222 is provided with a second electromagnetic lens 232.

[0096] Accordingly, in S200, the electromagnetic lens with the absorber structure generates ion deflection force, including: controlling the edge ions in the ion beam near the first electromagnetic lens to converge toward the center of the ion beam through the first electromagnetic lens; and controlling the edge ions in the ion beam near the second electromagnetic lens to converge toward the center of the ion beam through the second electromagnetic lens.

[0097] The structures of the first and second electromagnetic lenses described above can be found in the relevant descriptions above.

[0098] In addition, please combine Figure 6It can be understood that the direction of the first magnetic field generated by the first electromagnetic lens 231 can be controlled by controlling the direction of the current in the first electromagnetic coil 231b of the first electromagnetic lens, and the direction of the second magnetic field generated by the second electromagnetic coil 232b can be controlled by controlling the direction of the current in the second electromagnetic coil 232b of the second electromagnetic lens. For example, the direction of the first magnetic field generated by the first electromagnetic lens 231 is as follows: Figure 6 As shown by the dashed arrow a1 in the diagram; the direction of the second magnetic field generated by the second electromagnetic lens 232 is as follows. Figure 6 As shown by the dashed arrow a2 in the diagram; correspondingly, the first electromagnetic lens 231 can generate an ion deflection force toward the second electromagnetic lens 232, such that the approximate direction of motion of the edge ions in the ion beam near the first electromagnetic lens 231 is as follows. Figure 6 As shown by the dashed arrow b1 in the diagram; the second electromagnetic lens 232 can generate an ion deflection force towards the first electromagnetic lens 231, causing the approximate direction of motion of edge ions in the ion beam near the second electromagnetic lens 232 to be as follows. Figure 6 As shown by the dashed arrow b2 in the image.

[0099] In some embodiments, the ion implantation method further includes a screening stage, an acceleration stage, and an implantation stage. In the screening stage, a magnetic analyzer screens the converging ion beam emitted from the ion beam exit port 24; in the acceleration stage, an accelerating tube accelerates the converging ion beam screened by the magnetic analyzer to obtain a high-speed ion beam; in the implantation stage, the implantation chamber implants the high-speed ion beam into the target material.

[0100] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0101] The embodiments described above are merely examples of several implementations of this disclosure, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this disclosure, and these all fall within the protection scope of this disclosure.

Claims

1. An ion implantation device, characterized in that, include: An ion source with a narrow slit; The slit is used to emit an ion beam; An absorber structure is disposed on the side of the ion source from which the ion beam is emitted and is fixed in the disposed position; The absorber structure includes: An ion beam inlet and an ion beam outlet are provided, wherein the ion beam inlet is disposed opposite to the slit, and the area of ​​the ion beam inlet is larger than the maximum cross-sectional area of ​​the ion beam. An attraction electrode for capturing the ion beam emitted by the ion source, such that the ion beam enters from the ion beam inlet; and, An electromagnetic lens is used to generate an ion deflection force when energized, so that the ion beam is focused and aligned with the ion beam exit port.

2. The ion implantation apparatus according to claim 1, characterized in that, The attraction electrode includes a first electrode and a second electrode arranged opposite to each other along a first direction, and each electrode is provided with a corresponding electromagnetic lens; wherein, A first electromagnetic lens is disposed on the first electrode, and the first electromagnetic lens is used to generate an ion deflection force toward the second electromagnetic lens; A second electromagnetic lens is provided on the second electrode, and the second electromagnetic lens is used to generate an ion deflection force toward the first electromagnetic lens; The first direction intersects with the transmission direction of the ion beam.

3. The ion implantation apparatus according to claim 2, characterized in that, The transmission direction of the ion beam is a first horizontal direction parallel to the horizontal plane; the first direction is a vertical direction perpendicular to the first horizontal direction; or, the first direction is a second horizontal direction perpendicular to the first horizontal direction.

4. The ion implantation apparatus according to claim 2, characterized in that, The first electromagnetic lens includes a first magnetic core and a first electromagnetic coil wound in a spiral shape around the outside of the first magnetic core; the second electromagnetic lens includes a second magnetic core and a second electromagnetic coil wound in a spiral shape around the outside of the second magnetic core.

5. The ion implantation apparatus according to any one of claims 1-4, characterized in that, The attraction electrode extends along the transmission direction of the ion beam; the electromagnetic lens is disposed on one side of the attraction electrode or in the opening area of ​​the attraction electrode.

6. The ion implantation apparatus according to claim 5, characterized in that, The attracting structure further includes a housing; the housing includes a closed sidewall surrounding the ion beam in a plane perpendicular to the transmission direction of the ion beam; the attracting electrode and the electromagnetic lens are both disposed inside the sidewall of the housing.

7. The ion implantation apparatus according to claim 6, characterized in that, The housing further includes two end faces connected to the side wall and disposed opposite to each other along the transmission direction of the ion beam; wherein the attraction electrode is disposed only on the inner side of the side wall of the housing or the attraction electrode extends to cover the end face; the ion beam inlet and the ion beam outlet also penetrate the corresponding end faces respectively.

8. The ion implantation apparatus according to claim 1, characterized in that, The geometric center of the slit, the geometric center of the ion beam inlet, and the geometric center of the ion beam outlet are located on the same straight line, and the straight line is parallel to the transmission direction of the ion beam; the ratio of the area of ​​the ion beam inlet to the area of ​​the slit is greater than or equal to 4.

9. An ion implantation method, characterized in that, include: Ionization stage and extraction stage; During the ionization phase, the ion source generates an ion beam and emits the ion beam through a slit; During the extraction stage, the fixed absorber structure attracts the ion beam to enter through the ion beam inlet of the absorber structure by attracting the electrode, and generates an ion deflection force through the electromagnetic lens of the absorber structure so that the ion beam is focused and aligned with the ion beam outlet and emitted from the ion beam outlet. The absorber structure is disposed on the side of the ion source from which the ion beam is emitted and is fixed in the disposed position. The ion beam inlet is disposed opposite to the slit, and the area of ​​the ion beam inlet is larger than the maximum cross-sectional area of ​​the ion beam.

10. The ion implantation method according to claim 9, characterized in that, The attraction electrode includes a first electrode and a second electrode arranged opposite to each other along a first direction, and each electrode is provided with a corresponding electromagnetic lens; wherein, the first electrode is provided with a first electromagnetic lens, the second electrode is provided with a second electromagnetic lens, and the first direction intersects with the transmission direction of the ion beam; wherein... The generation of ion deflection force through the electromagnetic lens with an absorber structure includes: The first electromagnetic lens controls the edge ions in the ion beam near the first electromagnetic lens to converge toward the center of the ion beam. The second electromagnetic lens controls the edge ions in the ion beam near the second electromagnetic lens to converge towards the center of the ion beam.

Images