Electric field deflector, preparation method thereof and electric field deflection control system

By designing an electric field deflector that includes a substrate, a dielectric layer, a signal interconnect lead group, a deflection electrode pair, and a shielding layer, and employing CMOS and micro-nano fabrication processes, the high-precision and high-density integration problems of electric field deflectors in existing technologies have been solved, achieving high-precision control of the electron beam and reduction of signal interference.

CN121922547APending Publication Date: 2026-04-24SHENZHEN XINMAIPU ELECTRONIC TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202511809570.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-02
Publication Date
2026-04-24

AI Technical Summary

Technical Problem

Existing electric field deflectors are difficult to use in electron beam systems to achieve high-precision, high-density, and highly integrated electric field deflection control, and are prone to signal interference between electron beams.

Method used

An electric field deflector was designed, comprising a substrate, a dielectric layer, a signal interconnection lead group, a deflection electrode pair, a shielding layer, and a particle beam channel. The signal interconnection lead group, the deflection electrode pair, and the shielding layer are formed through flexible fabrication processes to ensure high-precision control and effective deflection of the electron beam. CMOS and micro-nano fabrication processes are used to improve manufacturing precision.

Benefits of technology

It achieves high-precision control and effective deflection of the electron beam, reduces signal interference between electron beams, and improves the resolution and accuracy of the semiconductor manufacturing process.

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Abstract

The invention discloses an electric field deflector, a preparation method thereof and an electric field deflection control system, relates to the field of semiconductors, and is used for realizing high-precision control of electron beams. The electric field deflector comprises a substrate, a dielectric layer arranged on one side of the substrate, a first signal interconnection lead connected with the ground electrode, a second signal interconnection lead connected with the signal electrode, a first deflection electrode and a second deflection electrode, wherein the first signal interconnection lead and the second signal interconnection lead are located in the dielectric layer and are connected with the ground electrode, and the first deflection electrode and the second deflection electrode are oppositely arranged. The first deflection electrode is electrically connected with the first signal interconnection lead, and the second deflection electrode is electrically connected with the second signal interconnection lead; the first shielding layer is connected with the first deflection electrode; the particle beam channel penetrates through the area between the first deflection electrode and the second deflection electrode, the part, located between the first signal interconnection lead and the second signal interconnection lead, of the dielectric layer, the first shielding layer and the substrate in the second direction; the second direction is vertical to the substrate; the electric field deflector is used for electric field deflection control of the charged particle beam.
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