Dual charged particle and energy dispersive spectral imaging using diamond films
By using a dual-detector configuration of a diamond film detector and an EDS detector in a charged particle microscope, the challenges of detecting backscattered electrons and X-rays are solved, enabling efficient and low-cost simultaneous detection, which is suitable for the compositional analysis of complex nanomaterials.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FEI CO
- Filing Date
- 2025-10-21
- Publication Date
- 2026-05-12
AI Technical Summary
In existing charged particle microscopes, it is difficult to detect backscattered electrons and X-rays simultaneously. EDS detectors are easily damaged by electrons, and small stereo angle solutions are time-consuming, costly, and the detectors are susceptible to damage from ions and milling operations.
A dual-detector configuration of a diamond film detector and an EDS detector is adopted. The diamond film detector is close to the target, absorbs backscattered electrons and is transparent to X-rays, achieving a large three-dimensional capture angle and simultaneously detecting backscattered electrons and X-rays.
It improves detection efficiency, reduces costs, minimizes detector damage, shortens data acquisition time, enhances signal-to-noise ratio and flexibility, and is suitable for milling operations.
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Figure CN122016893A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to components, systems, and methods for charged particle microscopy. More specifically, this disclosure describes a dual-detector charged particle microscope. Background Technology
[0002] In charged particle microscopy, scanning electron microscopy (SEM) uses electrons, rather than light, to generate images of the sample under study. To understand how SEM works, it's crucial to grasp the concept of backscattered electrons (BSE). BSEs are high-energy electrons used to obtain high-resolution images that show the distribution of the various elements that make up the sample. Detection of BSEs is typically performed using detectors made of a semiconductor material (usually silicon) placed directly above the sample. Electrons striking the detector excite silicon electrons, creating electron-hole pairs. Semiconductor detectors are sensitive to electrons with high energies, which is why they are used to detect backscattered electrons. The free electrons and the electron pairs generated by the backscattered electrons can separate before recombination, creating a current. This current can be measured by electronic circuitry and ultimately converted into a high-resolution image containing information about the elemental composition of the sample. Alternatively, they will be reflected or “backscattered” out of the sample. In energy-dispersive spectroscopy (EDS) applications, detecting X-rays can also be useful. The goal of any EDS detector is to collect as many X-rays as possible. However, it has been shown that detecting both backscattered electrons and X-rays is difficult because EDS detectors are susceptible to damage from electrons, and backscattered electron detectors block X-rays. As a result, there are small stereo angle solutions that are not optimal and take a lot of time to acquire data. Summary of the Invention
[0003] In some embodiments, a method for imaging in charged particle microscopy. The method further includes guiding a charged particle beam toward a target from a charged particle beam source, wherein the interaction of the charged particle beam with the target generates charged particle emission and electromagnetic emission. The method further includes receiving the charged particle emission and electromagnetic emission by a membrane detector, wherein the membrane detector at least partially absorbs a portion of the charged particle emission and is at least partially transparent to the electromagnetic emission. The method further includes outputting charged particle signal data by the membrane detector at least partially based on a portion of the charged particle emission received by the membrane detector. The method further includes outputting electromagnetic signal data by an electromagnetic emission detector at least partially based on electromagnetic emission passing through the membrane detector. The method further includes generating target data at least partially based on i) the charged particle signal data, ii) the electromagnetic signal data, or both i) and ii).
[0004] In some implementations, the membrane detector is a diamond membrane detector, and the output charged particle signal data may include the emission and absorption of electrons from charged particles by the diamond membrane detector, and the generation of image data is at least in part based on the electrons, such that the target data may include image data.
[0005] In some implementations, the electromagnetic emission detector may be an energy-dispersive spectroscopy (EDS) detector, and the electromagnetic emission may be X-ray emission. In some examples, the output electromagnetic signal data may include X-ray emission received by the EDS detector through the membrane detector, and target characterization data may be generated at least in part based on the X-ray emission, such that the target data includes target characterization data.
[0006] In some implementations, the method may include detecting electrons having energies in the energy range of 1 kiloelectron volt (keV) to 100 keV by a membrane detector.
[0007] In some embodiments, guiding a charged particle beam toward a target may include: guiding the charged particle beam through a channel in an electrode member, guiding the charged particle beam through a first aperture in an electromagnetic emission detector, and guiding the charged particle beam through a second aperture in a membrane detector. In some examples, the channel, the first aperture, and the second aperture may be coaxially aligned along an axis passing through the channel, the first aperture, and the second aperture.
[0008] In some implementations, target data is generated without moving the pole member, electromagnetic emission detector, or membrane detector relative to each other; and the output charged particle signal data and electromagnetic signal data occur substantially simultaneously.
[0009] In some implementations, the method may include generating a topological map of the target using charged particle emission; and generating energy dispersive spectroscopy (EDS) spectral correction by at least partially applying the topological map to the target data.
[0010] In some embodiments, an apparatus for imaging in charged particle microscopy may include: a charged particle source configured to generate a beam of charged particles configured to interact with a target to produce charged particle emission and electromagnetic emission; a membrane detector configured to receive the charged particle emission and electromagnetic emission, such that the membrane detector at least partially absorbs a portion of the charged particle emission and is at least partially transparent to the electromagnetic emission. In some examples, the membrane detector may be configured to output charged particle signal data at least partially based on the interaction between the membrane detector and the charged particle emission. Alternatively, the apparatus may include: an electromagnetic emission detector configured to output electromagnetic signal data at least partially based on electromagnetic emission passing through the membrane detector; and a controller configured to generate target data at least partially based on i) the charged particle signal data, ii) the electromagnetic signal data, or both i) and ii).
[0011] In some implementations, the controller may be configured to generate an image of the target based at least in part on i) charged particle signal data, ii) electromagnetic signal data, or both i) and ii)
[0012] In some implementations, the electromagnetic emission detector may be a silicon drift detector.
[0013] In some implementations, the membrane detector can be configured to be biased using a potential relative to the target to change the electron detection threshold.
[0014] In some implementations, the membrane detector may be configured with segmented electrodes for angled electron detection.
[0015] In some implementations, the membrane detector may have a first configuration, and in some examples, the device may include a second membrane detector with a second configuration. In some examples, the first configuration differs from the second configuration.
[0016] In some embodiments, the first configuration may include i) a first thickness of the membrane detector, ii) a first bias of the membrane detector, iii) a first position of the membrane detector, or a combination thereof, and wherein the second configuration includes i) a second thickness of the second membrane detector, ii) a second bias of the second membrane detector, iii) a second position of the second membrane detector, or a combination thereof.
[0017] In some embodiments, the apparatus for imaging in charged particle microscopy may include a membrane detector configured to be positioned relative to a beam of charged particles that generates charged particle emission and electromagnetic emission upon interaction with a target. In some examples, the membrane detector may be configured to at least partially absorb charged particle emission and be at least partially transparent to electromagnetic emission, such that the membrane detector may also be configured to output charged particle signal data at least partially based on the interaction between the membrane detector and the charged particle emission, and the electromagnetic emission detector may be configured to output electromagnetic signal data at least partially based on electromagnetic emission passing through the membrane detector.
[0018] In some implementations, the membrane detector may include a segmented region and a thin diamond film detector coupled to the segmented region, wherein the segmented region is configured to apply a bias voltage to the thin diamond film detector.
[0019] In some implementations, the membrane detector may have a thickness in the range of 100 nanometers (nm) and 100 micrometers (µm).
[0020] In some implementations, the membrane detector includes a first aperture, and the electromagnetic emission detector includes a second aperture, such that the first and second apertures are substantially aligned and configured to receive a beam of charged particles passing through them.
[0021] In some implementations, the membrane detector may be configured to be coupled to the surface of the electromagnetic emission detector.
[0022] In some embodiments, the membrane detector may include an aperture such that during operation of the charged particle beam, the membrane detector may be positioned such that the charged particle beam passes through the aperture, and the electromagnetic emission detector may be tilted relative to the charged particle beam such that the charged particle beam avoids passing through the electromagnetic emission detector.
[0023] In some embodiments, the various technical features, aspects, and advantages of this disclosure will be readily understood from the following detailed description. This disclosure should not be considered limiting, and one or more embodiments discussed herein can be combined in a variety of non-limiting ways. Some or all of the embodiments described herein may be modified without departing from the scope of this disclosure. The detailed description and accompanying drawings illustrate the contents of this disclosure and demonstrate its advantages. Attached Figure Description
[0024] The foregoing aspects and numerous advantages of this disclosure will become more readily understood when taken in conjunction with the accompanying drawings and the following detailed description.
[0025] Figure 1 This is a simplified schematic diagram of an example charged particle microscope based on some implementation schemes.
[0026] Figure 2 This is a simplified schematic diagram of example operation of a charged particle microscope including various detectors according to some implementation schemes.
[0027] Figure 3 This is a simplified schematic diagram of an example pair of small-angle and sequential energy dispersive spectroscopy (EDS) imaging devices.
[0028] Figure 4 This is a simplified schematic diagram of an on-axis detection device for both BSE and EDS, based on some implementation examples.
[0029] Figure 5 This is a simplified schematic diagram of an off-axis detection device for both BSE and EDS, based on some implementation examples.
[0030] Figure 6 This is a simplified schematic diagram of an example section of BSE and EDS charged particle microscopy, based on some implementation schemes, for generating target data simultaneously.
[0031] Figure 7 This is a simplified schematic diagram of an example process for attaching a membrane detector to an electromagnetic emission detector according to some implementation schemes.
[0032] Figure 8 This is a simplified schematic diagram of an example dual-detector configuration based on some implementation schemes.
[0033] Figure 9 This is a simplified example graph of the X-ray transmittance of a diamond film according to some implementation schemes.
[0034] Figure 10 This is a simplified example graph showing the detection efficiency of various diamond films according to some implementation schemes.
[0035] Figure 11 This is a simplified side view of a membrane detector turntable according to some implementation schemes.
[0036] Figure 12 This is a simplified top view of a membrane detector turntable according to some implementation schemes.
[0037] Figure 13 It is a simplified flowchart based on some implementation schemes.
[0038] Figure 14 This is a simplified controller diagram of a charged particle microscope based on some implementation schemes.
[0039] In the accompanying drawings, unless otherwise specified, the same reference numerals denote the same parts in the various views and embodiments. Where appropriate, it is not necessary to label all instances of elements to improve the clarity of the drawings. The drawings are not necessarily drawn to scale, but rather focus on illustrating the principles described. Detailed Implementation
[0040] While exemplary embodiments will be described herein, it should be understood that various changes may be made therein without departing from the spirit and scope of this disclosure. In the following paragraphs, embodiments of charged particle beam systems, components, and methods for the simultaneous detection of photons and charged particles in systems including such subsystems are described. For simplicity, embodiments of this disclosure focus on scanning electron microscopy (SEM) and related instruments. Therefore, the embodiments are not limited to such systems, but are contemplated for use with charged particle beam systems configured for multi-detector charged particle spectroscopy. Although SEM is described herein as an example use case, it should not be considered limiting, and it should be readily appreciated that the described apparatus, components, methods, and techniques can be applied to any suitable charged particle microscopy instrument.
[0041] Modern scanning electron microscopy imaging provides multimodal information about the structure, morphology, and composition of complex nanomaterials. Materials scientists need access to more nanoscale information to design, optimize, and understand material properties. Energy-dispersive X-ray spectroscopy (EDS, also abbreviated as EDX or XEDS) is an analytical technique for chemical characterization / elemental analysis of materials. A target excited by an energy source (e.g., the electron beam of an electron microscope) dissipates some of the absorbed energy by emitting core-shell electrons. The higher-energy shell electrons then continue to fill their positions, releasing the energy difference as X-rays with characteristic spectra based on the atom from which they originated. This allows for compositional analysis of a given target volume that has been excited by an energy source. The position of a peak in the spectrum identifies the element, while the signal intensity corresponds to the concentration of the element.
[0042] As previously mentioned, the electron beam provides sufficient energy to emit core-shell electrons and induce X-ray emission. Atomic-level compositional information can be obtained by adding an EDS detector to the electron microscope. As the electron probe scans the target, characteristic X-rays are emitted and measured; each recorded EDS spectrum is mapped to a specific location on the target. The quality of the results depends on signal intensity and spectral cleanliness. Signal intensity largely depends on a good signal-to-noise ratio, especially for trace element detection and dose minimization (which allows for faster recording and artifact-free results). Cleanliness will affect the number of stray peaks observed; this is a consequence of the material constituting the electron column.
[0043] EDS analysis is beneficial for obtaining target-related information, such as surface structure, internal structure, and chemical composition. To collect this information, two or more different detectors are typically used. For example, conventional microscopy uses two detectors placed far from the target to achieve dual measurements. Placing the detectors far from the target prevents interference between them, but their respective capture angles (e.g., the maximum capture cone on the respective detector surface) remain smaller compared to when the detectors are closer to the target. Small stereo angles are not optimal due to the limited amount of information reaching the respective detector and result in prolonged capture times. Furthermore, to protect the EDS detector, an electron trap is typically used to remove electrons from the X-ray path before they reach the EDS detector, increasing cost and complexity. In addition, both the EDS detector and the electron detector are susceptible to damage from ion and milling operations, making experiments difficult, cumbersome, and inefficient when milling the target.
[0044] According to embodiments of this disclosure, a dual-detector microscope includes a diamond film detector and an EDS detector, the EDS detector being located close to the target (e.g., on the line between the pole member and the target below the pole member), such that a large stereotactic trapping angle is achieved for both the diamond film detector and the EDS detector for charged particles emitted from the target. For example, an electron beam can pass through the pole member, which guides the electron beam toward the target. The electron beam can pass through holes located in the EDS detector and the diamond film. These holes can be concentrically aligned. Once the target interacts with the electron beam, backscattered electrons and X-rays are generated. The diamond film detector, which is closer to the target (compared to the EDS detector), traps or otherwise absorbs backscattered electrons before they can reach the EDS detector. The diamond film detector can then relay information about the backscattered electrons from the target to allow the user (or system) to obtain information related to surface structure, internal volume, etc. Advantageously, the diamond film is substantially transparent to X-rays, and therefore, X-rays will be allowed to pass substantially unimpeded through the diamond film detector to the EDS detector. By using a diamond film detector as an effective electron blocker and placing both the diamond film detector and the EDS detector close to the target, a large stereo capture angle can be achieved. Alternatively, by biasing the diamond film detector with an appropriate potential, secondary electrons can be attracted and detected.
[0045] In addition to the aforementioned technical advantages, diamond film detectors inherently lack a PN junction. This is advantageous in milling operations, where stray ions and milling material can fill the vacuum chamber containing the detector. For example, detectors typically use PN detectors, which can be damaged by ions and milling operations, requiring replacement parts and components, increasing costs for users operating microscopes. Since diamond film detectors have no PN junction at all, their use in milling operations is technically advantageous because they are resistant to ions and sputtered materials. Furthermore, due to the electron blocking function of the diamond film detector, the EDS detector located "behind" it does not require an electron trap, as the diamond film detector blocks electrons from reaching the EDS detector. This reduces component costs, decreases the space occupied within the vacuum chamber, facilitates the addition of other components, and increases flexibility. For example, diamond film detectors can be relatively easily retrofitted and applied to existing detector solutions. Moreover, it increases the throughput of experimental and milling operations because internal components (e.g., the EDS detector) do not need to be moved, and target data (e.g., surface data, target composition, etc.) can be captured simultaneously with milling, inspection, and various other operations.
[0046] Figure 1 This is a simplified schematic diagram of an example charged particle microscope 100 according to some embodiments. The example charged particle microscope 100 may include multiple sections including a charged particle source 103 (e.g., an electron source, ion source, etc.), a beam column 105, and a vacuum chamber 110. The charged particle source 103 includes a high-voltage power supply component, a vacuum system component, and a charged particle emitter configured to generate a beam of charged particles (e.g., electrons) accelerated into the beam column 105. The beam column 105 then includes an electromagnetic lens element configured to shape and form the charged particle beam from the charged particle source into a substantially circular beam having a substantially uniform profile transverse to the beam axis A, and to adjust the beam to be focused onto a target 125 through an objective lens 115, as per [reference to...]. Figure 2 A more detailed description.
[0047] Charged particle beams are typically characterized by beam current and accelerating voltage applied to generate the beam, among other criteria. The ranges for beam current and accelerating voltage can vary and can be selected based on the material properties of the target 125 or the type of analysis being performed. In some examples, charged particle beams are characterized by energies from about 0.1 keV (e.g., for an accelerating voltage of 0.1 kV) to about 60 keV and beam currents from picoamperes (pA) to microamperes (µm).
[0048] Vacuum chamber 110 and / or beam column 105 may include multiple detectors for various signals, including but not limited to secondary electrons generated by the interaction of the electron beam with the sample (e.g., regarding...). Figure 2 Secondary electrons 185), X-ray photons emitted by X-ray detector 130 (e.g., energy-dispersive X-ray analysis (EDAX)), other photons (e.g., visible light and / or infrared (IR) cameras), and / or molecular species (e.g., time-of-flight secondary ion mass spectrometry (TOF-SIMS)), as per [the relevant information]. Figure 2 Described in more detail. Vacuum chamber 110 may also include a target stage 120 operably coupled to a multi-axis translation / rotation control system, such that target 125 can be repositioned relative to beam axis A as a method of surveying and / or imaging target 125. Target stage 120 may be thermally coupled to heating circuitry 121. Furthermore, target stage 120 may include windows that allow electrons or other charged particles to transmit through target 125 and target stage 120. In this manner, one or more charged particle sensors of this disclosure may be disposed in vacuum chamber 110 and / or beam column 105 and configured to detect backscattered electrons (BSE) emitted from the sample (e.g., reflected and / or transmitted).
[0049] In some embodiments, the charged particle microscope 100 may be a single-beam scanning electron microscope (SEM) or a transmission electron microscope (TEM) instrument. In some embodiments, the charged particle microscope 100 may incorporate a charged particle source (e.g., an electron source) adapted, for example, to interrogate the target 125 for trace analysis. In this way, the charged particle detector of this disclosure may be configured to generate BSE data (e.g., images, line scans, etc.) in coordination with an electron source used for trace analysis of the sample. In examples where BSE data is not collected, an ion beam source (e.g., a focused ion beam (FIB)) may be implemented in addition to or as an alternative to the charged particle source. In an exemplary example, the focused ion source (e.g., a plasma focused ion beam (p-FIB) etc.) may be operatively coupled to a vacuum chamber 110 and configured to incrementally remove portions of the sample 125 in a layer-by-layer manner. Between increments, BSE imaging of the target 125 (e.g., using a charged particle source) provides a depth distribution of elemental information in the target 125, which is useful for quality assurance in semiconductor applications and other fields.
[0050] Figure 2This is a simplified schematic diagram of example operation of a charged particle microscope including various detectors according to some embodiments. Detectors include a mirror detector (MD) 155, a pole-mounted detector (PMD) 160, a STEM mode detector (SMD) 165, and other detectors such as a through-lens detector (TLD) 170 and an Everhart-Thornley detector 175. Other detectors and sources that can be coupled to the vacuum chamber 110 to enhance the capabilities of the charged particle microscope 100 are not shown. As a way of focusing on the configuration of charged particle detectors such as the mirror detector 155 and the pole-mounted detector 160, which are configured to detect BSE 180, or, in the case of the SMD 165, forward-scattered electrons, are also shown. For this purpose, embodiments of this disclosure include charged particle microscopes that include X-ray sources, X-ray detectors, ion beam sources, mass spectrometers, light sources (e.g., laser sources), or other sources that may be included as supplements to analytical instruments that can be used for microanalysis in SEM.
[0051] The mirror detector 155 and TLD 170 are disposed in the beam column 105 or the objective lens 115. For example, the mirror detector 155 may be disposed above the objective lens 115 and oriented such that the sensor surface faces the target stage 120. Advantageously, the position of the MD 155 in the beam column 105 makes the MD 155 well-suited for a generally flat target 125 or a target stage 120 that can be reoriented so that the normal angle is generally aligned with the beam axis A, because in such cases, the angular distribution emitted by the BSE 180 is highest at the normal angle to the surface of the target 125. To focus on describing the position of the MD 155 relative to the BSE 180, the charged particle microscope 100 components, and the target 125, in Figure 2 The diagram illustrates an MD 155 without retaining members or other support structures. In some embodiments, the MD 155 is mounted on a retractable support 195, as illustrated by the SMD 165. In this way, the MD 155 can be introduced into position when the BSE 180 imaging / analysis mode is initiated by the user of the charged particle microscope 100 and subsequently retracted from its position in the beam column 105 and / or objective lens 115. In some embodiments, the MD 155 is mechanically coupled to components of the beam column 105 and / or objective lens 115 and remains in place when not in use.
[0052] A detector (PMD) 160 with pole pieces mounted can be mechanically coupled to a pole member 117 housing an objective lens 115 and oriented such that the collector surface faces the target stage 120. The PMD 160 can be divided into multiple detectors, such as bipolar, tripolar, quadrupole, octupole, or other configurations (e.g., combinations of quadrant and concentric configurations). In this way, the PMD 160 can compensate for, for example, angular distributions centered at non-zero angles relative to the beam axis A caused by surface topography. As an MD 155, the PMD 160 can be mounted on a retractable support 195 instead of being mechanically coupled to the pole member 117. Advantageously, mounting the PMD 160 on the retractable support 195 allows the PMD 160 to be removed between the target stage 120 and the pole member 117, thereby allowing the introduction of other probes, sources, or components into the same space (e.g., a parabolic mirror for luminescence measurement / imaging). For example, the PMD 160 (e.g., regarding...) Figure 7 The electromagnetic emission detector 730 may have a membrane detector (e.g., regarding) attached thereto. Figure 4 The membrane detector 440 is used to capture BSE 180 emitted from the target 125. In some examples, the PMD 160 is used to collect BSE data used as a BSE detector, or to collect EDS data used as an EDS detector, or a combination thereof.
[0053] The scanning transmission electron microscope (STEM) mode detector 165 can be mechanically coupled to a retractable support 195 configured to introduce the SMD 165 into a position such that the target stage 120 is positioned between the objective lens 115 / polarimeter 117 and the SMD 165. The SMD 165 can be oriented such that the detector surface faces the underside of the target stage 120. In this way, forward-scattered electrons (FSE) 183 emitted from the target 125 can reach the detector surface and generate characteristic signals for imaging and / or microanalysis. In this context, FSE 183 may include electrons that undergo inelastic or elastic collisions with the target 125 and are redirected through the target 125 instead of returning to the beam column 105. In this way, X-rays 181 emitted from the target 125 (e.g., a region of the interaction volume of the sample from which X-rays are generated) can reach the detector surface and generate characteristic signals for imaging and / or microanalysis. X-rays 181 may include X-rays generated from inner-shell excitation in atoms of target 125, which are directed through target 125 instead of returning towards beam column 105. While SMD 165 is presented as an example detector for electrons, it should not be considered limiting and any suitable detection scheme can be implemented. For example, with SMD 165, filter 140 may be disposed between detector 165 and target 125 such that charged particles and relatively low-energy photons can be absorbed to selectively detect X-rays 181. Similar to PMD 160, SMD 165 may be segmented to resolve angular distributions, such as, but not limited to, bright-field, dark-field, or high-angle dark-field.
[0054] The filter 140 is movable relative to the detector unit. By placing the filter 140 between the absorber surface of the detector unit and the target, the detector can generate X-ray data with negligible or no signals attributable to charged particles and relatively low-energy photons (e.g., infrared, visible, and / or ultraviolet photons). In this way, embodiments of this disclosure provide improved stereo collection angles and improved take-off angles relative to the X-ray detector 130, resulting in improved accumulation time, signal-to-noise ratio properties, and reduced exposure of the sensitive target to charged particle dose.
[0055] X-ray detector 130 includes detector 131 that is shielded from charged particles, photons, and other noise sources by window 133 and collimator 135, resulting in a significant reduction in the stereo collection angle. Additionally, to protect the window material and / or reduce the interaction between the magnetic components of X-ray detector 130 and the charged particle beam, X-ray detector 130 may be limited to a relatively low exit angle, for example, about 30 to about 50 degrees from the plane defined by the surface of target 125. The exit angle can be increased by tilting target 125, at the cost of reduced functionality of detectors 155, 160, 165, and 170 during X-ray collection. In some examples, one or more of detectors 155, 160, 165, or 170 may include a membrane detector (e.g., regarding...). Figure 5 The membrane detector 540 is replaced by and / or overlaps with the membrane detector in order to capture various target features simultaneously (as discussed in more detail below).
[0056] Figure 3 This is a simplified schematic diagram of an example small-angle and sequential energy-dispersive spectroscopy (EDS) imaging apparatus 300a. As an example, the small-angle EDS imaging apparatus 300a includes an X-ray detector 361 and an electron detector 360. The X-ray detector 361 is positioned remotely from the target 125 to detect X-rays 362 emitted from the target 125 as a charged particle beam 306 (e.g., a primary electron beam) interrogates the target 125 via a pole member 304 that guides the charged particle beam 306. The X-ray detector 361 includes a coated window 364 that can be used to protect the X-ray detector 361 from incoming particles and atmospheric effects that could damage the X-ray detector 361 due to frequent cooling and moisture condensation. The X-rays 362 can carry characteristic information about the target 125, such as its chemical composition. However, the X-ray detector 361 is susceptible to damage from scattered electrons. To compensate for this deficiency, an electron trap 363 (e.g., a magnet) is used to filter out electrons traveling toward the X-ray detector 361 that could damage the X-ray detector 361 or otherwise render it inoperable.
[0057] Similar to X-ray detector 361, electron detector 360 is placed off-axis (compared to the optical / transmission axis of charged particle beam 306), causing X-ray detector 361 and electron detector 360 to be non-axially aligned. This configuration allows for the near-simultaneous measurement of backscattered electrons 367 (e.g., using electron detector 360) and X-rays 362 (e.g., using X-ray detector 361). However, due to the distance between target 125 and electron detectors 360 and X-ray detector 361, the relatively small capture angle can limit the collection of important feature information. For example, during some experiments, the amount of backscattered electrons 367 may far exceed the amount of X-rays 362 received by the respective detectors. To obtain more feature information, the capture angle of X-ray detector 361 should be increased to capture more X-rays 362, which could result in moving X-ray detector 361 closer to target 125 or increasing the size of X-ray detector 361. This may not be optimal due to size limitations within the vacuum chamber (e.g., vacuum chamber 110), cost considerations, and the potential damage to X-ray detector 361 by stray electrons. Similarly, due to the small capture angle and off-axis configuration, the electron detector 360 can receive only a small fraction of the optimal amount of electrons, thus limiting the amount of useful feature information about the target 125.
[0058] Another configuration implements a sequential measurement scheme and increases the amount of useful feature information by increasing the capture angle of electron detector 360 instead of X-ray detector 361. For clarity, some components depicted in small-angle EDS imaging device 300a are not labeled in the sequential EDS imaging device 300b. The sequential EDS imaging device 300b includes X-ray detector 361 and electron detector 360. Similar to small-angle EDS imaging device 300a, X-ray detector 361 is configured off-axis. Unlike small-angle EDS imaging device 300a, electron detector 360 is positioned substantially coaxially with charged particle beam 306, with an aperture passing through it to allow charged particle beam 306 to pass through. Due to this configuration, electron detector 360 will have a larger electron capture angle, but can also be used to block or otherwise limit X-rays 362 from reaching X-ray detector 361. To remedy this, the experiment can be broken down into fundamental time components. The first part involves using an electron detector 360 to capture backscattered electrons 367 from the target 125 during a first time interval, and then physically repositioning the electron detector 360 away from the charged particle beam 306 so that the X-rays 362 from the target 125 are no longer blocked. During a second time interval, the X-ray detector 361 can then capture the X-rays 362 that were previously blocked by the electron detector 360. In this way, characteristic information about the target 125 can be captured. However, this approach may be time-consuming and labor-intensive, and still cannot compensate for the small capture angle of the X-ray detector 361, thus limiting the amount of useful information obtained.
[0059] Figure 4 This is a simplified schematic diagram of an on-axis detection device 400 for both BSE and EDS, based on some embodiments. While backscattered electrons (BSE) are referenced in some examples for clarity of discussion, this should not be considered limiting, and it should be readily appreciated that, where appropriate, suitable charged particle detectors discussed throughout this disclosure can detect unbackscattered electrons. The BSE and EDS on-axis detector device 400 may include, with respect to... Figure 1 , Figure 2 , Figures 5 to 8 , Figure 11 , Figure 12 and Figure 14 Some or all of the components and / or configurations, and can be based on the information provided. Figure 13The device operates by performing some or all of its operations and / or steps. In some embodiments, the BSE and EDS on-axis detector device 400 receives a beam of charged particles 406 (e.g., electrons, ions, etc.) from a charged particle source (not depicted). The charged particle beam 406 may be guided toward a target 425 (e.g., circuitry, proteins, wafers, etc.) by a pole member 404 (e.g., an electromagnet) through a through-hole extending along the transmission axis of the pole member 404. Once the charged particle beam 406 leaves the pole member 404, it may pass through an aperture in an electromagnetic emission detector 430 (e.g., an X-ray detector) and then through a membrane detector 440 to impact or otherwise interact with the target 425. Although not depicted for ease of reference and clarity, a window (e.g., a coated window) may be coupled to or proximate the electromagnetic emission detector 430 or any other suitable detector that functions in conjunction with the membrane detector 440.
[0060] When the charged particle beam 406 interrogates the target 425, charged particle emission 412 (e.g., backscattered electrons) and electromagnetic emission 481 (e.g., X-rays) can be emitted from the target 425 back to the membrane detector 440 in various directions depending on many factors, including but not limited to surface topology, spacer volume, chemical composition, electrical bias, etc. While electromagnetic emission 481 is depicted as being received on the left side of the transmission axis and electrons are shown as being received on the right side of the transmission axis, it should be understood that electromagnetic emission 481 and charged particle emission 412 are emitted from the target 425 in many directions not depicted, including beyond the depicted trapping cone of each respective detector. For clarity of discussion and illustration, electromagnetic emission is depicted on the left side of the transmission axis and charged particle emission 412 on the right side of the transmission axis, and those skilled in the art will recognize that the emission directions can be arbitrarily switched within and outside the page and spatially overlap.
[0061] In some examples, the membrane detector 440 can be a wide-bandgap semiconductor, such as a diamond membrane detector. When the charged particle emission 412 interacts with the membrane detector 440, the membrane detector 440 can at least partially absorb a portion of the charged particle emission 412 and generate electron-hole pairs, which can be separated and driven to the corresponding conductive layer (not depicted) by a bias voltage applied to the top or bottom surface of the membrane detector 440. Figure 8(Discussed in more detail). In this way, the membrane detector 440 can be used as an electron detector. The membrane detector 440 can be at least partially transparent to one or more wavelengths of electromagnetic emission 481. For example, the membrane detector 440 can be at least partially transparent to wavelengths in the range between 0.01 nanometers (nm) and 25 nm (e.g., energies between 50 electron volts (eV) and 100 kiloelectron volts (keV)). While this example shows transparency to X-rays, it should not be considered limiting, and those skilled in the art will recognize that the membrane detector 440 can be transparent to any suitable electromagnetic emission (such as infrared, visible, ultraviolet, etc.). Alternatively, the membrane detector 440 can be at least partially transparent to a first wavelength range and at least partially opaque to a second wavelength range.
[0062] The membrane detector 440 may include a stacked array of membrane detectors, which may be added individually or in groups in a straight line with the charged particle beam 406 (e.g., repositioned, rotated, etc.). Each membrane detector 440 in the array may be made of a different material or may be made of the same material (e.g., carbon nanotubes, diamond, etc.). Each membrane detector 440 in the array may be in contact with each other or may be spaced apart from each other at an appropriate distance (e.g., regarding...). Figure 11 (Discussed in more detail). Each membrane detector 440 in the membrane detector group can have a different thickness or can have the same thickness (as discussed in more detail). Figure 8 (To be discussed in more detail).
[0063] In some examples, the electromagnetic emission detector 430 may be an EDS detector, such as a silicon drift detector (SDD), receiving electromagnetic emissions 481 from the target 425 that have passed through the membrane detector 440. Because the membrane detector 440 at least partially absorbs or otherwise restricts charged particles from reaching the electromagnetic emission detector 430, electromagnetic emissions 481 are created for the membrane detector 440 (e.g., with respect to...). Figure 3Compared to the smaller capture angle, the full electromagnetic capture angle increases the electromagnetic signal captured by the target 425. Generally, a smaller capture angle results in a longer acquisition time than a larger capture angle, as more time is required to collect enough photons to provide accurate target data. With this in mind, the time to capture target data is significantly reduced due to the full electromagnetic capture angle provided by the membrane detector 440 / electromagnetic emission detector 430 configuration, because more data is collected in a shorter time interval compared to having to wait for a smaller capture angle configuration to capture enough photons to provide similar results. In a non-limiting example, this configuration (e.g., using a graphical user interface (GUI)) provides users of the EDS and X-ray on-axis detector device 400 with the ability to monitor the composition of the target 425 (e.g., target data from the electromagnetic emission detector 430) and the surface topology / morphology of the target 425 substantially simultaneously (e.g., at the same time), with fast data acquisition time, improved signal throughput, and improved on-demand capabilities, such as monitoring during milling (as discussed below).
[0064] Now return to the discussion of the film detector 440. Due to the optimal properties of diamond film detectors, such as their characteristically low X-ray absorption (e.g., allowing at least some X-rays to pass through) and favorable resistance to ions and sputtered materials (e.g., diamond has no PN junctions that could be damaged by ions), diamond film detectors are well-suited for collecting backscattered electrons during milling operations, SEM / STEM operations, etc., and allowing X-rays to pass through to reach the electromagnetic emission detector 430. As a non-limiting example, the ion beam (not depicted) may be located in a vacuum chamber (e.g., regarding...). Figure 1 The target 425 is located near the vacuum chamber 110 in order to modify the target 425 in a suitable manner. A user interacting with the simultaneous BSE and EDS on-axis detection device 400 can monitor the target 425 via the membrane detector 440 and the electromagnetic emission detector 430, and can receive information such as the surface topology from the membrane detector 440 and the chemical composition from the electromagnetic emission detector 430. The user (or automated system) can (e.g., using the electromagnetic emission detector 430) identify specific unwanted chemical components on the target 425 and can guide the ion beam to grind away the unwanted chemical components from the target 425. The user can quickly determine whether the unwanted chemical components on the target 425 have been milled away by monitoring the charged particle signal and the electromagnetic signal, thus determining whether the milling process was successful. Compared to users using conventional small-angle or sequential EDS devices, the user will have to wait for the extended time period associated with acquiring sufficient signals for determination, or the user will have to remove the charged particle detector before detecting electromagnetic emission, which will be time-consuming and labor-intensive. The configuration of this implementation scheme remedies these deficiencies by acquiring charged particle signals and electromagnetic signals substantially simultaneously and in a compact coaxial manner.
[0065] Figure 5 This is a simplified schematic diagram of a simultaneous BSE and EDS off-axis detection device according to some implementation examples. The BSE and EDS off-axis detection device 500 may include, regarding... Figure 1 , Figure 2 , Figure 4 , Figures 6 to 8 , Figure 11 , Figure 12 and Figure 14 Some or all of the components and / or configurations, and can be based on the information provided. Figure 13 Some or all of the operations and / or steps to operate. The BSE and EDS off-axis detector device 500 includes pole members 504 (e.g., regarding...). Figure 1 The membrane detector 540 is substantially coaxially aligned with the pole member 504, such that a first aperture of the membrane detector 540 receives a beam of charged particles 506 from the channel of the pole member 504. After passing through the first aperture of the membrane detector 540, the charged particle beam 506 interrogates the target 525 (as previously discussed). Subsequently, charged particle emission 512 and electromagnetic emission 581 are generated and transmitted outward. Similar to the BSE and EDS on-axis detector arrangement 400, the membrane detector 540 is spatially located at a large capture angle position. Although the membrane detector 540 is depicted as substantially coplanar with the target 525, those skilled in the art will recognize that the membrane detector 540 can be positioned and / or oriented at any suitable angle relative to the target 525 and / or the electromagnetic emission detector 530. For example, some existing systems that can be retrofitted with the membrane detector 540 of this embodiment may have the electromagnetic emission detector 530 in an inconspicuous or unique location, such that if mounted in a planar manner, the membrane detector 540 may not be able to adequately capture sufficient charged particle emission 512. In this non-limiting example, the membrane detector 540 can be mounted at an angle relative to the electromagnetic emission detector 530 to adequately protect the electromagnetic emission detector 530 from damage by the charged particle emission 512. This is relative to the target stage supporting the target 525 (e.g., regarding...). Figure 1 The supporting surface plane of the target stage 120 can be angled between 0 degrees and 45 degrees.
[0066] As previously described, the BSE and EDS off-axis detector assembly 500 includes an electromagnetic emission detector 530, which is positioned off-axis relative to the transmission axis of the charged particle beam 506. This configuration is particularly suitable for charged particle microscopy where multiple detectors are positioned at different angles within a vacuum chamber. As previously described, a membrane detector 540 can substantially limit or otherwise block the emission of charged particles from reaching the electromagnetic emission detector 530. In some examples, the electromagnetic emission detector 530 may be one of a group of electromagnetic emission detectors and / or other suitable detectors (e.g., secondary electromagnetic emission detectors, temperature sensors, laser milling depth sensors, etc.). Since the membrane detector 540 can be substantially transparent to electromagnetic light of one or more wavelengths, it can transmit light of appropriate wavelengths to the corresponding electromagnetic emission detector.
[0067] Figure 6 This is a simplified schematic diagram of an example section of EDS and X-ray charged particle microscopy, based on some implementation schemes, for generating target data simultaneously. The BSE and EDS 600 may include... Figure 1 , Figure 2 , Figure 4 , Figure 5 , Figure 7 , Figure 8 , Figure 11 , Figure 12 and Figure 14 Some or all of the components and / or configurations, and can be based on the information provided. Figure 13 Some or all of the operations and / or steps are required for it to function. The BSE and EDS detector device 600 includes an electromagnetic emission detector 630 and a membrane detector 640. While the electromagnetic emission detector 630 and the membrane detector 640 are essentially based on... Figure 4 The configuration shown is illustrated, but it can also be appropriately implemented regarding... Figure 5 Configuration.
[0068] As previously described, when the target 625 interacts with the charged particle beam (unlabeled), charged particle emissions 612 (e.g., BSE, scattered electrons, etc.) and / or electromagnetic emissions 681 (e.g., X-rays, infrared rays, etc.) are detected by the membrane detector 640 and the electromagnetic emission detector 630, respectively. For example, when charged particle emissions 612 are emitted by the target 625, the membrane detector 640 can capture some or all of the charged particle emissions 612 and relay or otherwise output the charged particle signal data to the controller for signal processing (e.g., regarding...). Figure 14The controller 1402. Charged particle signal data can be generated from one or more of the following, but not limited to: segmented back side, segmented front side, front metal contact, back metal contact, doped front side segment, doped back side segment, carbonized front side segment, carbonized back side segment, or combinations thereof. Charged particle signal data 641 can be processed by the controller to generate, but not limited to, target surface profile, target internal structure profile, target composition profile, target shape profile, target size profile, or combinations thereof. In some examples, the controller can process the charged particle signal data 641 to generate one or more first characterizations 650, such as, but not limited to, images, videos, histograms, or combinations thereof, for output (e.g., output to a GUI).
[0069] Regarding the electromagnetic emission detector 630, electromagnetic emission 681 can be captured by the surface of the electromagnetic emission detector 630 and converted into electromagnetic signal data 631, which can be relayed or otherwise output to a controller (not depicted) for signal processing. For example, the electromagnetic emission detector 630 can receive X-rays that pass substantially unsuppressed through the membrane detector 640, carrying characterization information about the target 625. The controller can process the electromagnetic signal data 631 to generate a second characterization 652, including but not limited to the target chemical composition (e.g., depicting spectral peaks of sodium (Na), copper (Cu), etc.) or target concentration (e.g., depicting the intensity of spectral peaks of %14 Na, 25% Cu, where the percentage is a weight percentage, etc.). In some examples, the controller can process the electromagnetic signal data 631 and generate one or more second characterizations 652, such as, but not limited to, images, videos, histograms, spectrograms, or combinations thereof, for output (e.g., output to a GUI).
[0070] Figure 7 This is a simplified schematic diagram of an example process 700 for attaching a membrane detector 740 to an electromagnetic emission detector 730 according to some embodiments. Process 700 may include, regarding Figure 1 , Figure 2 , Figures 4 to 6 , Figure 8 , Figure 11 , Figure 12 and Figure 14 Some or all of the components and / or configurations, and may include, according to the provisions of Figure 13 The electromagnetic emission detector 730 may be attached to a telescopic arm or support and includes an aperture 779 between a top surface and a bottom surface, which receives a beam of charged particles 706 passing through it. The electromagnetic emission detector 730 may be a charged particle microscope (e.g., regarding...) Figure 1The electromagnetic emission detector 730 may be part of a charged particle microscope 100, or may be, but is not limited to, a modular detector that can be retrofitted into an existing microscope system. The electromagnetic emission detector 730 may include a plurality of electromagnetic emission apertures 780, which may at least partially surround an aperture 779. The plurality of electromagnetic emission apertures 780 may be configured to receive electromagnetic emissions from a target 725, and in some examples, may include any suitable number of apertures (e.g., two apertures, four apertures, etc.).
[0071] The membrane detector 740 can be coupled to a surface of the electromagnetic emission detector 730 (e.g., the bottom surface facing the target 725). In some examples, the membrane detector 740 can be coupled via a coupling element, including but not limited to adhesives, mechanical couplers (e.g., screws, nuts, bolts, etc.), snap-fit locks, tapes, latches, protrusions (e.g., pin retainers), or combinations thereof. The membrane detector 740 may include one or more biasing components 731. For example, the membrane detector 740 may include, but is not limited to, methods for connecting the membrane detector 740 to microscope circuitry (not depicted), the electromagnetic emission detector 730, or a controller (e.g., regarding...). Figure 14 The controller 1402) or is capable of receiving signals from the membrane detector 740 (e.g., regarding the controller 1402) or the membrane detector 740. Figure 6 The wires, traces, bonding pads, electrodes, etc. of any suitable component of the charged particle signal data 641. Alternatively, the biasing component 731 may be configured to provide a potential to the membrane detector 740 (e.g., by means of a distance relative to the charged particle signal data 641). Figure 8 (segment top side 843 and / or segment bottom side 842).
[0072] In some examples, the membrane detector 740 is coupled to the electromagnetic emission detector 730 in a manner that protects it from damage by charged particles. In a non-limiting example, the membrane detector 740 may have sufficient length (e.g., one millimeter (mm) to fifty millimeters), width (e.g., one millimeter (mm) to fifty millimeters), and thickness (e.g., fifty nanometers to ten micrometers) to substantially mitigate or otherwise limit the reach of charged particles to the electromagnetic emission aperture 780 (shown in dashed lines on the right because the membrane detector 740 substantially covers the electromagnetic emission aperture 780 when mounted) and otherwise damage the electromagnetic emission detector 730 (e.g., a silicon drift detector).
[0073] Figure 8 This is a simplified schematic diagram of an example dual-detector configuration 800 according to some implementation schemes. The dual-detector configuration 800 may include information about... Figure 1 , Figure 2 , Figure 4 , Figure 5 , Figure 7 , Figure 8 , Figure 11 , Figure 12 and Figure 14 Some or all of the components and / or configurations, and can be based on the information provided. Figure 13 Some or all of the operations and / or steps are performed to function. The dual detector configuration 800 includes an electrode member 804 that receives a beam of charged particles (not depicted) through a channel 879 passing therethrough. Additionally, an electromagnetic emission detector 830 receives the beam of charged particles from the channel 879 through a first aperture 878, the size of which is appropriately set to facilitate the passage of the charged particle beam. After passing through the first aperture 878, the charged particle beam passes through a second aperture 876 of the membrane detector. In some examples, the channel 879, the first aperture 878, and / or the second aperture 876 may be substantially concentrically aligned about the center of one or more of the channel 879, the first aperture 878, and / or the second aperture 876. The first aperture 878 and / or the second aperture 876 may have similar diameters, or may include appropriately different diameters depending on the target (e.g., regarding...). Figure 4 The distance to the target (125) and / or the operation of the microscope.
[0074] The membrane detector 840 may include one or more segmented regions. For example, the membrane detector 840 may include a segmented top side 843 and / or a segmented bottom side 842, with a membrane 845 (e.g., a diamond layer) between them. The segments may be, but are not limited to: metal contacts that separate one or more portions and / or regions of the membrane for angled detection of charged particles (e.g., electrons); one or more doped regions that create the segmented regions in a pattern; carbonization of one or more regions of the membrane 845; or combinations thereof. The membrane 845 may include a membrane thickness 841. The membrane thickness 841 may be in the range of 50 nm to 50 µm. In some examples, the membrane 845, the segmented top side 843, and the segmented bottom side 842 may be configured integrally without separate layers as shown. Alternatively, a potential (e.g., from 0.1 volts (V) to 5 kV) may be applied between the top side 843 and the bottom side 842 of the segment to vary the quantum detection efficiency (e.g., how much signal the detector provides for each electron). This bias may be between approximately 50 V (or higher) per micrometer of thickness of the membrane detector 840. For example, for a 50 µm thick membrane detector 840 with 100 V applied per micrometer, a bias of 5 kV would be applied to achieve the desired detection efficiency. In another non-limiting example, the 50 µm thick membrane detector 840 may be biased relative to the target between 1 keV and 100 keV, wherein the top side 843 and the bottom side 842 of the segment are biased between 0.1 V and 5 kV, respectively. It should be readily appreciated that biases appropriately below 1 keV and biases appropriately above 100 keV are within the scope of this disclosure. In some examples, the detection threshold can be increased or decreased by applying a bias voltage (e.g., 10 kV or lower) between the entire membrane detector 840 and the target, thereby accelerating (or decelerating) electrons and changing the corresponding energy, which affects whether electrons can be detected.
[0075] Figure 9 This is a simplified example graph 900 of the X-ray transmittance of a diamond film according to some embodiments. Graph 900 shows three example graphs of varying film detector thicknesses, where the percentage of photon transmittance varies with photon energy. For example, for a film detector made of 100 nm thick diamond (e.g., regarding...). Figure 8The film detector 840 is capable of blocking electrons up to 2.3 keV and allowing a large amount of X-rays to pass through at low light energies, which is optimal for achieving strong signals for low-photon-energy iron (Fe), nickel (Ni), and Cu Lyman-alpha (Ly-α) lines. While only Fe, Ni, and Cu Ly-α are depicted for clarity and discussion, this should not be considered limiting, and any suitable Ly-α line associated within the appropriate energy range can be detected. In the next non-limiting example, for a diamond thickness of 1 µm, diamond can block electrons up to about 10 keV and provide good signals for aluminum (Al) and silicon (Si) k-alpha (k-α) lines. As the thickness of the diamond increases (e.g., film thickness 841), the amount of electrons that can potentially pass through the diamond decreases. Similarly, but with less attenuation compared to charged particles, the thicker the diamond, the more X-rays are attenuated.
[0076] Figure 10 This is a simplified example graph 1000 showing the detection efficiency of various diamond films according to some embodiments. Graph 1000 illustrates two example graphs plotting electron energy as a percentage of detection efficiency, in keV, for different film detector materials. For example, a film detector made of polycrystalline chemical vapor deposition (CVD) diamond, held at a potential bias of 200V, provides an optimal detection threshold for electrons with energies between 5keV and 30keV. In another non-limiting example, a film detector made of single-crystal CVD diamond provides over 80% detection efficiency for electrons with energies in the range of approximately 2keV to 30keV. While the range between 2keV and 30keV is discussed as an example detection efficiency range, it should not be considered limiting, and appropriate energies at and below 2keV, at and above 30keV, and in between are all within the scope of this disclosure.
[0077] Figure 11 This is a simplified side view of a membrane detector turntable 1190 according to some embodiments. The membrane detector turntable 1190 may include or be coupled to... Figure 1 , Figure 2 , Figure 4 , Figure 5 , Figure 7 , Figure 8 , Figure 12 and Figure 14 Some or all of the components and / or configurations, and can be based on the information provided. Figure 13Some or all of the operations and / or steps are performed. Detector turntable 1190 is movable relative to pole member 1004 and / or one or more electromagnetic emission detectors 1030 (only one is depicted for clarity). Detector turntable 1190 can facilitate modifiable transmittance by including a plurality of membrane detectors 1140a to 1140n, where n is an integer number of membrane detectors in a straight line with electromagnetic emission and charged particle emission received from a target (not depicted). For example, five membrane detectors are depicted in a straight line with electromagnetic emission and charged particle emission, while two membrane detectors (e.g., membrane detectors 1140a and 1140b) are depicted in a retracted or otherwise removed state away from electromagnetic emission and charged particle emission. In this non-limiting example, membrane detectors 1140a and 1140b may be protected by shielding when retracted to prevent ions and milling material from accumulating on unused membrane detectors 1140a-n when charged particle emission is not being directly detected.
[0078] Each of the membrane detectors 1140a-n can be rotated to a position below the electromagnetic emission detector 1030 and the pole member 1004 (e.g., relative to the transmission axis of the charged particle beam). The transmittance of electromagnetic emission and charged particle emission is then proportional to the number of membrane detectors 1040a-n in place. For example, in an experiment inquiring about a semiconductor of interest, it may be unknown how much charged particle emission and electromagnetic emission will be generated. The user (or through the system using information about...) Figure 14 The controller 1402 (automatically) can add any suitable number of membrane detectors 1140 to the circuit to attenuate or otherwise limit one or both of electromagnetic emission and charged particle emission. Each membrane detector 1140 includes an aperture (unlabeled) for receiving a beam of charged particles passing through it. In some embodiments, the membrane detectors 1140 can be inserted based on a decision of which electron energy is desired (e.g., user-defined, machine-initiated, etc.) (e.g., a single µm membrane for 10 keV electrons, two 1 µm membranes for 15 keV electrons, etc.), and ensure that no electrons reach the electromagnetic emission detector 1030.
[0079] In some examples, one or more electromagnetic emission detectors 1030 may be attached to one or more membrane detectors 1140a-n and suitably rotate together with one or more membrane detectors 1140a-n. Alternatively, one or more of the electromagnetic emission detectors 1030 and / or membrane detectors 1140a-n may be positioned off-axis, coaxially, or in suitable combinations thereof (e.g., regarding...). Figure 4 and Figure 5(Configuration of the detectors). In some embodiments, the turntable 1190 may be replaced and / or supplemented by one or more translation arms that linearly translate one or more of the electromagnetic emission detector 1030 and / or membrane detectors 1140a-n in a straight line with the charged particle beam. Each of the membrane detectors 1140a-n may have a different configuration or the same configuration. For example, some membrane detectors 1140a-n may include a thickness of 1 µm, while others may include a thickness of 5 µm. The membrane detectors 1140a-n may include appropriately different segmented surfaces (as previously discussed). In some examples, the membrane detectors 1140a-n may be held at different potentials. For example, membrane detector 1140a may be held at 200 volts, while membrane detector 1140b may be held at 250 volts.
[0080] Figure 12 This is a simplified top view of a membrane detector turntable 1200 according to some embodiments. The membrane detector turntable 1200 may include or be coupled to... Figure 1 , Figure 2 , Figure 4 , Figure 5 , Figure 7 , Figure 8 , Figure 12 and Figure 14 Some or all of the components and / or configurations, and can be based on the information provided. Figure 13 Some or all of the operations and / or steps are performed. A rotation axis exists around a support of turntable 1290, about which one or more membrane detectors 1240a-n can rotate. In some embodiments, the movement is linear rather than rotational, where the membrane detector 1240a-n elements retract behind a shield (not shown) via linear translation. The shield can be moved relative to the membrane detectors 1240a-n and / or the electromagnetic emission detector (e.g., electromagnetic emission detector 1030). For example, when performing processes that create a destructive environment (e.g., ion beam milling of a sample producing high ion and electron flux), the shield can be moved to a position protecting the membrane detectors 1240a-n and the electromagnetic emission detector.
[0081] Figure 13 This is a simplified flowchart based on some implementation schemes. In some implementation schemes, flowchart 1300 may include... Figure 13 The flowchart 1300 may depict more or fewer steps. It should be understood that the steps of flowchart 1300 can be performed in any suitable order. Flowchart 1300 can be performed by some or all of the components of a system or apparatus, and / or include steps as described above. Figures 1 to 12 and Figure 14 The processes, methods, or techniques described.
[0082] Flowchart 1300 may begin at step 1302, where a beam of charged particles can be guided toward a target. The beam of charged particles (e.g., electrons) can be generated from a source of charged particles (e.g., about...). Figure 1 The charged particle source 103 generates the charge and propagates along the beam column (e.g., beam column 105) toward the target (e.g., about the target). Figure 2 Target 125) transmission.
[0083] At step 1304, the target can produce charged particle emission (e.g., regarding...). Figure 4 Charged particle emission 412) and electromagnetic emission (e.g., regarding Figure 4 Electromagnetic emission (481). Charged particle emission may include backscattered electrons from a target. In some examples, electromagnetic emission may include X-rays from a target.
[0084] At step 1306, the membrane detector (e.g., single-crystal CVD diamond or polycrystalline CVD diamond) can receive charged particle emissions and electromagnetic emissions from the target. In some examples, the membrane detector can at least partially absorb a portion of the charged particle emissions and can be at least partially transparent to electromagnetic emissions. For example, the membrane detector absorbs electrons with energies below a threshold (e.g., up to 5 keV for a suitable membrane detector thickness).
[0085] At step 1308, the membrane detector can output a charged particle signal, at least in part, based on the interaction between the membrane detector and the emission of charged particles (e.g., regarding...). Figure 6 The charged particle signal data 641). In some examples, the membrane detector may include metal contacts (e.g., segmented electrodes) on one or more sides to effectively relay the charged particle signal to the appropriate component (e.g., regarding the charged particle signal data 641). Figure 14 Controller 1402).
[0086] At step 1310, the electromagnetic emission detector (e.g., a silicon drift detector) may output electromagnetic signal data based at least in part on the electromagnetic emission received after passing through the membrane detector. In some examples, the electromagnetic emission detector may be in direct contact with the membrane detector (e.g., as per [reference to...]). Figure 7 The depicted), or may be located at a distance on the axis (e.g., as about Figure 4 (as depicted) or tilted off-axis (e.g., as about) Figure 5 (As depicted).
[0087] At step 1312, target data may be generated at least in part based on charged particle signal data, electromagnetic signal data, or both. The target data may include characterization (e.g., regarding...). Figure 6The first characterization 650 and / or the second characterization 652). In some examples, a topological map (e.g., a two-dimensional surface profile) of the target can be generated from the target data by the emission of charged particles detected at the membrane detector. Energy dispersive spectroscopy (EDS) spectral correction can be generated by applying the topological map at least partially to the target data. Correction for EDS image segmentation can be based on electronic data. Different materials can have different scattered electron / BSE emission, so there is not enough EDS data for feasible analysis. Combining EDS data with BSE data provides a suitable and improved alternative compared to using the data independently. In addition, materials with high Z (e.g., atomic number) have high BSE emissivity for some energies, so for a given energy range, BSE images and EDS data can be combined using BSE images to produce material contrast, thereby generating more information about the target.
[0088] Figure 14 This is a simplified controller diagram of a charged particle microscope according to some embodiments. According to some embodiments, controller 1402 is used to perform methods, processes, techniques, etc., for the charged particle microscope 1499. Examples of the charged particle microscope 1499 may include those from... Figure 1 , Figure 2 , Figures 4 to 8 , Figure 11 , Figure 12 Some or all components of a microscope system. Examples of methods, processes, techniques, and operations may include... Figure 13 Some or all of the methods, processes, techniques, and operations described herein. As shown, controller 1402 may include processor 1404 communicatively coupled to memory 1406. Processor 1404 may include one or more processing devices. Non-limiting examples of processor 1404 include field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), microprocessors, or any combination thereof. Processor 1404 may execute instructions 1407 stored in memory 1406 to perform operations, such as... Figure 13 The operation of microscopes, processes, scans, and methods. In some examples, instruction 1407 may include processor-specific instructions generated by a compiler or interpreter from code written in any suitable computer programming language, such as C, C++, C#, Python, or Java.
[0089] Memory 1406 may include one or more memory devices. Memory 1406 may be non-volatile and may include any type of memory device that retains stored information when power is lost. Non-limiting examples of memory 1406 include electrically erasable programmable read-only memory (EEPROM), flash memory, or any other type of non-volatile memory. At least some of the memories in memory 1406 may include non-transitory computer-readable media from which processor 1404 can read instructions 1407 via bus 1405. Bus 1405 may be a communication and / or power bus that enables processor 1404 to communicate with memory 1406. Non-transitory computer-readable media may include electronic, optical, magnetic, or other storage devices capable of providing instructions 1407 or other program code to processor 1404. Non-limiting examples of non-transitory computer-readable media include disks, memory chips, RAM, ASICs, or any other medium from which a computer processor can read instructions 1407.
[0090] The memory 1406 may also include operational information regarding parameters 1408 (e.g., calibration, image capture, electrical bias, power, turntable translation / rotation), characterization module 1409 (e.g., synthesis software, lookup table, etc.), imaging module 1410 (e.g., detector imaging, video processing, image processing, signal processing), membrane module 1412 (e.g., calibration, electrical bias, position), detector module 1414 (e.g., calibration, electrical bias, position), and pole module 1416 (e.g., electrical bias). The controller 1402 can receive information about operational parameters from a microscope (such as TEM, SEM, etc.). At least some of the information about any of the components of the controller 1402 may be pre-stored and associated with various scanning processes (e.g., acquisition). Parameters 1408 may include operational parameters associated with the electron microscope system, such as the desired energy / primary energy of the electron beam, energy spread of the energy loss spectrum, locking mechanism, feedback loop, etc. In some examples, some parameters 1408 may be compared with predetermined thresholds (e.g., known arrangement, known sample type, etc.).
[0091] The terms and expressions used herein are descriptive rather than restrictive, and their use is not intended to exclude any equivalents of the features shown and described or portions thereof; rather, it should be recognized that various modifications are possible within the scope of the claims. Therefore, it should be understood that while this disclosure includes particular embodiments and optional features, modifications and alterations to the concepts disclosed herein can be made by those skilled in the art, and such modifications and alterations are considered to be within the scope of the appended claims.
[0092] As used in this application and claims, the singular forms “a,” “an,” and “the” include the plural forms unless the context clearly indicates otherwise. Additionally, the term “comprising” means “including.” Furthermore, the term “coupled” does not exclude the existence of intermediate elements between coupled items.
[0093] The systems, apparatus, and methods described herein should not be construed as limiting in any way. Rather, this disclosure relates to all novel and non-obvious features and aspects of the various disclosed embodiments, whether individually or in various combinations and sub-combinations formed with each other. The disclosed systems, methods, and apparatus are not limited to any particular aspect or feature or combination thereof, nor are they required to possess any one or more particular advantages or problems solved. Any operational theory is provided for ease of interpretation, but the disclosed systems, methods, and apparatus are not limited to such operational theories.
[0094] Although some operations of the disclosed methods are described in a specific order for ease of presentation, it should be understood that this descriptive approach encompasses rearrangement unless the specific order is required by the language in question. For example, operations described sequentially may be rearranged or performed concurrently in some cases. Furthermore, for simplicity, the accompanying drawings may not show the various ways in which the disclosed systems, methods, and apparatus can be combined with other systems, methods, and apparatus. Additionally, this description sometimes uses terms such as “produce” and “provide” to describe the disclosed methods. These terms are high-level abstractions of the actual operations performed. The actual operations corresponding to these terms will vary depending on the specific implementation and can be readily identified by one of skill in the art.
[0095] The term "image" is intended to include a two-dimensional grid, which may comprise at least one or more portions. Each portion is characterized by its coordinates and its values (color and / or intensity). Thus, an image can refer to a visual representation of a sample in variations in grayscale and / or color and / or intensity. Furthermore, each portion in an image may correspond to a point (e.g., a location) on a target or a sub-location on the target, etc.
[0096] Some embodiments of this disclosure include systems having one or more data processors and / or logic circuits. In some embodiments, the system includes a non-transitory computer-readable storage medium containing instructions that, when executed on the one or more data processors and / or logic circuits, cause the one or more data processors and / or logic circuits to perform part or all of the one or more methods disclosed herein and / or part or all of one or more processes and workflows. Some embodiments of this disclosure include a computer program product tangibly embodied in a non-transitory machine-readable storage medium, the computer program product including instructions configured to cause one or more data processors and / or logic circuits to perform part or all of the one or more methods disclosed herein and / or part or all of one or more processes.
[0097] The terms and expressions used herein are descriptive rather than restrictive, and their use is not intended to exclude any equivalents of the features shown and described or portions thereof; rather, it should be recognized that various modifications are possible within the scope of the claims. Therefore, it should be understood that while this disclosure includes particular embodiments and optional features, modifications and alterations to the concepts disclosed herein can be made by those skilled in the art, and such modifications and alterations are considered to be within the scope of the appended claims.
[0098] When a term is used without a clear definition, it should be understood that unless the term has a special and / or specific meaning in the field of charged particle microscopy systems or other related fields, it refers to the general meaning of the word. The terms “about” or “substantially” are used to indicate a deviation from the stated property, where the deviation has little or no effect on the corresponding function, property, or attribute of the described structure. In the illustrative example where one dimensional parameter is described as “substantially equal” to another dimensional parameter, the term “substantially” is intended to reflect that the two parameters being compared may be unequal within permissible limits (such as confidence intervals inherent in manufacturing tolerances or system operation). Similarly, where geometric parameters (such as alignment or angular orientation) are described as “about” perpendicular, “substantially” perpendicular, or “substantially” parallel, the terms “about” or “substantially” are intended to reflect that the alignment or angular orientation may differ from the precisely stated condition (e.g., not precisely perpendicular) within permissible limits. For numerical values (such as diameter, length, width, etc.), the term “about” can be understood to describe a deviation of up to ±10% from the stated value. For example, the size "about 20mm" can describe sizes ranging from 15mm to 25mm.
[0099] When using terms such as simultaneous, concurrent, or similar, it should be understood that they are intended to express the general meaning of the word. Furthermore, these terms are used to describe events or actions that a person skilled in the art will recognize as occurring substantially at the same time.
[0100] When using terms such as “off-axis,” “tilted,” “on-axis,” or “coaxial,” it should be understood that these terms refer to relative positions and, unless otherwise defined herein, describe the relative position of one or more components with respect to the transmission axis of the charged particle beam (the axis of one or more apertures). When using terms such as “top” or “bottom,” it should be understood that these terms refer to the relative position of one or more components and are used to readily identify the position and / or orientation of one or more components relative to other components. Additionally, when using terms such as “proximal” or “close,” it should be understood that these terms define the spatial position of one or more components and may indicate direct physical contact or spatial proximity without physical contact. When using the term “thin,” it should be understood that, unless otherwise defined, this term indicates a layer thickness between 20 nm and 500 µm. The terminology used herein is not intended to be limiting, and those skilled in the art will recognize suitable equivalents and reference points.
[0101] This description provides exemplary embodiments and is not intended to limit the scope, applicability, or configuration of this disclosure. Rather, the subsequent description of exemplary embodiments will provide those skilled in the art with an enabling description for implementing various embodiments. It should be understood that various changes may be made to the function and arrangement of elements without departing from the spirit and scope set forth in the appended claims. Specific details are given in the description to provide a thorough understanding of the embodiments. However, it should be understood that embodiments may be practiced without these specific details. For example, specific system components, systems, processes, and other elements of this disclosure may be shown schematically or omitted from the illustrations to avoid obscuring the embodiments with unnecessary details. In other instances, well-known circuits, processes, components, structures, and / or techniques may be shown without unnecessary details.
Claims
1. A method for imaging in charged particle microscopy, the method comprising: A charged particle beam is guided toward a target by a charged particle beam source, wherein the interaction between the charged particle beam and the target generates charged particle emission and electromagnetic emission; The charged particle emission and the electromagnetic emission are received by a membrane detector, wherein the membrane detector at least partially absorbs a portion of the charged particle emission and is at least partially transparent to the electromagnetic emission; The membrane detector outputs charged particle signal data based at least in part on the portion emitted by the charged particle received by the membrane detector; The electromagnetic emission detector outputs electromagnetic signal data based at least in part on the electromagnetic emission passing through the membrane detector; and Target data is generated at least in part based on i) the charged particle signal data, ii) the electromagnetic signal data, or both i) and ii).
2. The method of claim 1, wherein the membrane detector is a diamond membrane detector; and wherein outputting the charged particle signal data further comprises: Electrons are absorbed from the emitted charged particles by the diamond film detector; as well as Image data is generated at least in part based on the electrons, wherein the target data includes the image data.
3. The method of claim 1, wherein the electromagnetic emission detector is an energy-dispersive spectroscopy (EDS) detector, and the electromagnetic emission is X-ray emission; and wherein outputting the electromagnetic signal data further comprises: The X-ray emission passing through the membrane detector is received by the EDS detector; as well as Target characterization data is generated at least in part based on the X-ray emission, wherein the target data includes the target characterization data.
4. The method according to claim 1, further comprising: Electrons with energies in the energy range of 1 kiloelectron volt (keV) to 100 keV are detected by the membrane detector.
5. The method of claim 1, wherein guiding the charged particle beam toward the target further comprises: The channel that guides the charged particle beam through the pole member; Guide the charged particle beam through the first aperture in the electromagnetic emission detector; as well as The charged particle beam is guided through a second aperture in the membrane detector, wherein the channel, the first aperture, and the second aperture are coaxially aligned along an axis passing through the channel, the first aperture, and the second aperture.
6. The method of claim 5, wherein the generation of the target data occurs without moving the pole member, the electromagnetic emission detector, or the membrane detector relative to each other; and wherein the output of the charged particle signal data and the electromagnetic signal data occurs substantially simultaneously.
7. The method according to claim 1, further comprising: The topological mapping of the target is generated using the emission of the charged particles; as well as Energy dispersive spectroscopy (EDS) spectral correction is generated by applying the topological mapping at least partially to the target data.
8. An apparatus for imaging in charged particle microscopy, the apparatus comprising: A charged particle source configured to generate a beam of charged particles, the beam of charged particles being configured to interact with a target to generate charged particle emission and electromagnetic emission; A membrane detector configured to receive the charged particle emission and the electromagnetic emission, wherein the membrane detector at least partially absorbs a portion of the charged particle emission and is at least partially transparent to the electromagnetic emission, and wherein the membrane detector is further configured to output charged particle signal data at least partially based on the interaction between the membrane detector and the charged particle emission; An electromagnetic emission detector, the electromagnetic emission detector being configured to output electromagnetic signal data based at least in part on the electromagnetic emission passing through the membrane detector; and A controller configured to generate target data based at least in part on i) the charged particle signal data, ii) the electromagnetic signal data, or both i) and ii).
9. The device of claim 8, wherein the controller is further configured to generate an image of the target based at least in part on i) the charged particle signal data, ii) the electromagnetic signal data, or both i) and ii).
10. The device of claim 8, wherein the electromagnetic emission detector is a silicon drift detector.
11. The apparatus of claim 8, wherein the membrane detector is configured to be biased using a potential relative to the target to change the electron detection threshold.
12. The device of claim 8, wherein the membrane detector is configured with segmented electrodes for angled electron detection.
13. The device of claim 8, wherein the membrane detector has a first configuration, and wherein the device further comprises: A second membrane detector having a second configuration, wherein the first configuration is different from the second configuration.
14. The device of claim 13, wherein the first configuration comprises: i) a first thickness of the membrane detector, ii) a first bias of the membrane detector, iii) a first position of the membrane detector, or a combination thereof, and wherein the second configuration includes: i) a second thickness of the second membrane detector, ii) a second bias of the second membrane detector, iii) a second position of the second membrane detector, or a combination thereof.
15. An apparatus for imaging in charged particle microscopy, the apparatus comprising: A membrane detector configured to be placed relative to a beam of charged particles that generates charged particle emission and electromagnetic emission upon interaction with a target, wherein the membrane detector is configured to at least partially absorb the charged particle emission and be at least partially transparent to the electromagnetic emission, and wherein the membrane detector is further configured to output charged particle signal data based at least partially on the interaction between the membrane detector and the charged particle emission. and An electromagnetic emission detector configured to output electromagnetic signal data based at least in part on the electromagnetic emission passing through the membrane detector.
16. The apparatus of claim 15, wherein the membrane detector comprises: Segmented regions; and A thin diamond film detector coupled to the segmented region, wherein the segmented region is configured to apply a bias voltage to the thin diamond film detector.
17. The apparatus of claim 15, wherein the membrane detector has a thickness in the range of 100 nanometers (nm) to 100 micrometers (µm).
18. The apparatus of claim 15, wherein the membrane detector includes a first aperture and the electromagnetic emission detector includes a second aperture, wherein the first aperture and the second aperture are substantially aligned and configured to receive the charged particle beam passing therethrough.
19. The apparatus of claim 15, wherein the membrane detector is configured to be coupled to the surface of the electromagnetic emission detector.
20. The apparatus of claim 15, wherein the membrane detector comprises an aperture; and wherein, During the operation of the charged particle beam: The membrane detector is positioned such that the charged particle beam passes through the aperture; and The electromagnetic emission detector is positioned at an angle relative to the charged particle beam, so that the charged particle beam avoids passing through the electromagnetic emission detector.