BGA delay driving assembly based on HTCC technology

Abstract

The invention relates to the technical field of microwave radio frequency components, in particular to a BGA delay driving component based on an HTCC process. According to the technical scheme, the device comprises a shell and further comprises a cover plate used for improving the sealing performance of the device, the cover plate is arranged on the outer side of the shell, an HTCC multi-layer circuit substrate is arranged at the lower position in the shell, a four-bit time delay unit MMIC chip is arranged at the middle position of the HTCC multi-layer circuit substrate, and the four-bit time delay unit MMIC chip is arranged at the lower position of the HTCC multi-layer circuit substrate. And a wave control chip is arranged on the right side of the four-bit time delay unit MMIC chip. Through the characteristics of the HTCC process, the assembly has the advantages of high mechanical strength, high wiring density, stable chemical performance, high heat dissipation coefficient, low material cost and the like, and meanwhile, the ball grid array packaging (BGA) technology is applied to an integrated circuit, so that the BGA packaging has low insertion loss, excellent signal integrity, compact size, high integration level and high reliability. Therefore, the high-speed performance is better.

Description

Technical Field

[0001] This invention relates to the field of microwave radio frequency components technology, and in particular to a BGA delay drive component based on HTCC technology. Background Technology

[0002] In existing technologies, traditional time-delay drive components are manufactured using LTCC or organic substrate processes. LTCC processes are limited by materials and sintering temperatures, resulting in lower wiring density and significantly increased losses in high-frequency applications, making them unsuitable for high-density BGA packaging requirements. The thermal stability and environmental stress resistance of organic substrates may lead to a shortened component lifespan.

[0003] In modern communication and radar electronic systems, with the continuous development of technology, the requirements for component performance, integration, and miniaturization are becoming increasingly stringent. Under the trend of miniaturization in phased array radar systems, receiving and transmitting components require characteristics such as small size and light weight.

[0004] Therefore, this application proposes a BGA delay drive component based on HTCC technology. Summary of the Invention

[0005] The purpose of this invention is to address the problem that existing delay drive components in the background technology cannot adapt to the high-density integrated BGA packaging requirements, and to propose a BGA delay drive component based on HTCC process.

[0006] The technical solution of this invention: A BGA delay drive component based on HTCC process, comprising a housing, and further comprising: A cover plate for improving the sealing performance of the equipment is provided on the outside of the housing, and an HTCC multilayer circuit board is provided at the lower inside of the housing. A four-bit delay MMIC chip is disposed in the middle of the HTCC multilayer circuit board, a wave controller chip is disposed to the right of the four-bit delay MMIC chip, and a receive-transmit link is disposed on one side of the wave controller chip.

[0007] Optionally, the receive-transmit link includes a single-pole double-throw switch chip, a low-noise amplifier chip, a drive amplifier chip, a temperature-compensated attenuator chip, an equalizer chip, and a power modulator chip.

[0008] Optionally, the wave control chip is installed to the right of the four-bit delay MMIC chip. The low-noise amplifier chip, temperature-compensated attenuator chip, equalizer chip, and power modulator chip are all disposed above the HTCC multilayer circuit board. The drive amplifier chip and the power modulator chip 102 are connected. The power modulator chip provides the BGA delay drive component with the power modulation signal of the drive amplifier chip in its transmit path and the power modulation signal of the low-noise amplifier in its receive path.

[0009] Optionally, the low-noise amplifier chip is powered by a +5V power supply and the power modulation signal of the power modulator chip regulates the signal amplification and noise suppression of the BGA delay drive component. The drive amplifier chip is powered by a +5V power supply and the power modulation signal of the power modulator chip 102 realizes the power drive amplification of the BGA delay drive component.

[0010] Optionally, the HTCC multilayer circuit board is composed of a 10-layer circuit board lamination structure, and the top surface of the HTCC multilayer circuit board is provided with corresponding functional solid-state microwave devices.

[0011] Optionally, the HTCC multilayer circuit board has a Top Layer on its top and a Bottom Layer on its bottom.

[0012] Optionally, the corresponding functional solid-state microwave device is soldered onto the surface of the Top Layer, and the BottommLayer layer consists of 199 BGA solder joints.

[0013] Optionally, the 199 BGA solder points include antenna port BGA solder balls and common terminal BGA solder balls.

[0014] Optionally, the temperature-compensated attenuator chip can automatically cancel the gain fluctuations of the corresponding functional solid-state microwave device caused by temperature changes, and the equalizer chip can automatically cancel the frequency-selective distortion in the transmission path from the antenna port BGA solder ball to the common terminal BGA solder ball.

[0015] Optionally, the housing and cover are made of Kovar alloy.

[0016] In summary, this application includes at least one of the following beneficial technical effects: 1. Utilizing the characteristics of HTCC process, the components have advantages such as high mechanical strength, high wiring density, stable chemical properties, high heat dissipation coefficient and low material cost. At the same time, the application of ball grid array (BGA) packaging technology on integrated circuits gives BGA packaging low insertion loss and excellent signal integrity, compact size and high integration, thus providing better high-speed performance. 2. The Kova alloy frame provides structural support for the module, achieving a high airtight connection between the outer shell and insulating materials such as ceramics, protecting the internal chips from external environmental influences. The Kova alloy cover plate provides a high airtight seal for the module, and by welding it to the Kova alloy frame, it isolates the external environment and protects the internal chips of the module. Attached Figure Description

[0017] Figure 1 This is a principle block diagram of a specific embodiment of the present invention; Figure 2 This is a BGA pad distribution diagram of the present invention; Figure 3 This invention relates to the layout of HTCC multilayer circuit boards.

[0018] Reference numerals: 101, Antenna port BGA solder ball; 102, Power modulator chip; 103, Four-bit delay MMIC chip; 104, Common terminal BGA solder ball; 105, Cover plate; 106, Waveguide chip; 107, HTCC multilayer circuit board; 108, Housing; 109, Single-pole double-throw switch chip; 110, Driver amplifier chip; 111, Equalizer chip; 112, Temperature-compensated attenuator chip; 113, Low-noise amplifier chip. Detailed Implementation

[0019] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0020] The components of the embodiments of the invention described and shown in the accompanying drawings can typically be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of the invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention.

[0021] Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0023] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0024] like Figure 1 and Figure 2 As shown, the present invention proposes a BGA delay drive component based on HTCC technology, including a housing 108, and further comprising: The cover plate 105 is used to improve the sealing performance of the equipment. The cover plate 105 is disposed on the outside of the housing 108. The HTCC multilayer circuit board 107 is disposed at the lower part of the inside of the housing 108. A four-bit delay MMIC chip 103 is disposed in the middle of the HTCC multilayer circuit board 107, and a wave controller chip 106 is disposed to the right of the four-bit delay MMIC chip 103. A receive and transmit link is disposed on one side of the wave controller chip 106. The housing 108 and the cover plate 105 are made of Kva alloy. The HTCC multilayer circuit board 107 has the advantages of high thermal conductivity, high temperature resistance, high strength, wear resistance and low cost. The Kva alloy has a matching coefficient of thermal expansion with the ceramic substrate, and has good processing performance, excellent mechanical properties and good chemical stability. This device uses parallel sealing technology to weld the shell and cover plate to ensure the airtightness of the components. At the same time, the device can ensure delay accuracy and amplitude variation through cavity processing. The wave control chip 106 is installed to the right of the four-bit delay MMIC chip 103. The low noise amplifier chip 113, temperature compensated attenuator chip 112, equalizer chip 111 and power modulator chip 102 are all set on top of the HTCC multilayer circuit board 107. The driver amplifier chip 110 and the power modulator chip 102 are connected. The power modulator chip 102 provides the BGA delay driver component with the power modulation signal of the driver amplifier chip 110 in its transmission path and the power modulation signal of the low noise amplifier 113 in its receiving path. The low noise amplifier chip 113 is powered by +5V power supply and the power modulation signal of the power modulator chip 102 regulates the signal amplification and noise suppression of the BGA delay driver component. The driver amplifier chip 110 is powered by +5V power supply and the power modulation signal of the power modulator chip 102 realizes the power drive amplification of the BGA delay driver component. This BGA delay driver component is a single-channel receive or transmit delay component. The entire component includes a microwave interface, a control interface, and a power interface, all of which are in BGA form. The component mainly consists of an HTCC multilayer circuit board 107, a housing 108, a cover plate 105, and an RF microwave chip. The HTCC multilayer circuit board 107 provides high-density circuit interconnection and efficient heat dissipation channels for the various chips and other components. The housing 108 and cover plate 105 provide structural support for the component, achieving a highly airtight connection between the outer shell and insulating materials such as ceramic, while protecting the internal chips from external environmental influences. The cover plate 105 provides a highly airtight seal, and by welding to the housing 108, it isolates the component from the external environment, protecting the internal chips.

[0025] The low-noise amplifier chip 113, powered by a +5V power supply and modulated by the power modulation signal of the power modulator chip 102, regulates the signal amplification and noise suppression of the BGA delay drive component. The drive amplifier chip 110, powered by a +5V power supply and modulated by the power modulation signal of the power modulator chip 102, realizes the power drive amplification of the BGA delay drive component. The HTCC multilayer circuit board 107 is composed of a 10-layer circuit board lamination structure. Corresponding functional solid-state microwave devices are disposed on the outer side of the HTCC multilayer circuit board 107. A Top Layer is disposed on the top of the HTCC multilayer circuit board 107, and a Bottom Layer is disposed on the bottom of the HTCC multilayer circuit board 107. The HTCC multilayer circuit board 107 has a total of 9 ceramic layers and a total of 10 corresponding metal layers. The corresponding functional solid-state microwave devices are soldered on the surface of the Top Layer. The first layer consists of 199 BGA solder points, including antenna port BGA solder balls 101 and 104 common terminal BGA solder balls. The temperature-compensated attenuator chip 112 automatically cancels gain fluctuations caused by temperature changes in the corresponding functional solid-state microwave devices, and the equalizer chip 111 automatically cancels frequency-selective distortion in the transmission path from antenna port BGA solder ball 101 to common terminal BGA solder ball 104. This first layer is the stripline structure in the corresponding functional solid-state microwave devices and HTCC multilayer circuit board 107, enabling efficient microwave signal transmission, as well as signal filtering, coupling, and impedance matching functions. Layers 2-5 are large-area grounding layers, providing low-impedance grounding paths for all grounding components, suppressing electromagnetic interference, and also acting as passive heat sinks to help conduct heat for each chip. Layer 6 consists of +5V power lines and a few signal lines; layer 7 is a signal line layer; and layer 8 consists of -5V power lines and a few signal lines. The signal and power line layers serve to directionally transmit electrical signals and connect components on the PCB, providing information transmission channels for circuit functions. Layers 9 and 10 are large-area grounding layers. The HTCC multilayer circuit board 107 has a board thickness of approximately 2mm and a board size of 12mm × 22mm, resulting in a final component weight of <1.8g, achieving miniaturization and high integration. The HTCC multilayer circuit board 107 uses BGA for its board interface, control interface for each chip, and power interface for the device. BGA has low insertion loss and excellent signal integrity, compact size and high integration, thus providing better high-speed performance.

[0026] Figure 3 The internal components of the housing 108 are as follows: the receiver-transmitter link includes a single-pole double-throw switch chip 109, a low-noise amplifier chip 113, a driver amplifier chip 110, a temperature-compensated attenuator chip 112, an equalizer chip 111, and a power modulator chip 102.

[0027] The housing 108 employs a compartmentalized design, housing a single-pole double-throw switch chip 109, a low-noise amplifier chip 113, a driver amplifier chip 110, a temperature-compensated attenuator chip 112, and an equalizer chip 111 within one compartment. A second compartment comprises a four-bit digital delay chip 103, a wave controller chip 106, and a set of power modulator chips 102. The third part includes another set of power modulator chips 102 and a dual-channel NOT gate chip.

[0028] In Area 1, the single-pole double-throw switch chip 109 realizes the switching of transmit and receive states, the low-noise amplifier chip 113 realizes gain amplification, and the drive amplifier chip 110 realizes power drive amplification.

[0029] In Area 2, the four-bit delay MMIC chip 103 implements the component's delay function. This chip is a gallium arsenide monolithic microwave integrated circuit chip, manufactured using a 0.15µm gate length gallium arsenide pseudomorphic high electron mobility transistor process. The chip has a grounded via on the back, operates at frequencies from 8GHz to 12GHz, and is controlled by TTL levels of 0V / +5V, with a maximum delay of 780ps. The four-bit delay MMIC chip 103 provides a delay accuracy of less than 3% of the nominal value within the operating frequency range, with an insertion loss of less than 17dB and an input / output voltage standing wave ratio of less than 1.4. The four-bit delay MMIC chip 103, along with the wave controller chip 106 and the power modulator chip 102, implements power modulation, delay, and transmit / receive switching control for the component.

[0030] Region 3 power modulator chips and dual-channel NOT gate chips mainly provide power modulation and control for components.

[0031] The working process of the radio frequency signal in this specific embodiment is as follows: Figure 3 When the device is in transmit mode, the input transmit excitation signal is 4dBm. The RF signal enters the component through the common terminal BGA solder ball 104, where the power becomes 3.8dBm. After passing through the fixed attenuator, the power is adjusted to 0.8dBm and input to the four-bit delay chip. After loss by the four-bit delay chip, the power becomes -15.2dBm and input to the bidirectional amplification network composed of the switch chip and the driver amplifier chip 110. In the transmit branch, the microwave power becomes -16.2dBm after passing through the switch chip and input to the first-stage driver amplifier chip 110. After being amplified by the driver, the microwave power outputs 0.3dBm and enters the temperature-compensated attenuator, where the power is adjusted to -2.7dBm. It is then input to the second-stage driver amplifier chip 110, where the microwave power is amplified again and outputs 18.3dBm. After passing through the switch chip and leaving the bidirectional amplification network, the power is adjusted by the fixed attenuator and output to the component through the antenna port BGA solder ball 101, delivering 14.1dBm of microwave power.

[0032] Figure 3 When the device is in receiving mode, the RF signal enters the component through the BGA solder ball 101 at the antenna port. Due to the loss of the BGA solder ball, the component's receiving channel gain is -0.2dB at this time. After adjustment by the 3dB fixed attenuator chip inside the component, the component's receiving channel gain is now -3.2dB. After passing through the single-pole double-throw switch chip 109, the receiving channel gain is -4.2dB. The single-pole double-throw switch chip 109 is controlled by an electrical signal to switch between the common terminal and two different path terminals. Then, after passing through the temperature-compensated attenuator chip 112, the gain is -7.2dB. After passing through the equalizer chip 111, the gain is -9dB. After passing through the low-noise amplifier chip 113, the gain is +20dB. The low-noise amplifier chip 113 adopts on-chip metallized through-hole technology, which does not require additional grounding measures and is simple and convenient to use. The gain is +19dB after passing through the single-pole double-throw switch chip 109, +3dB after passing through the four-bit delay MMIC chip 103, and 0dB after passing through the 3dB fixed attenuator chip. Finally, the output gain is -0.2dB after passing through the common terminal BGA solder ball 104. This link ultimately meets the component's single-channel receive link specification allocation requirements.

[0033] In this embodiment, the HTCC (High-Temperature Co-fired Ceramics) process has advantages such as high mechanical strength, high wiring density, stable chemical properties, high heat dissipation coefficient, and low material cost. Meanwhile, Ball Grid Array (BGA) packaging technology is a surface-mount packaging technology applied to integrated circuits. BGA packaging features low insertion loss and excellent signal integrity, compact size, and high integration, thus providing better high-speed performance.

[0034] The above specific embodiments are merely several optional embodiments of the present invention. Based on the technical solutions of the present invention and the relevant teachings of the above embodiments, those skilled in the art can make various alternative improvements and combinations to the above specific embodiments.

Claims

1. A BGA delay drive component based on HTCC technology, comprising a housing (108), characterized in that, Also includes: A cover plate (105) for improving the sealing of the equipment is provided on the outside of the housing (108), and an HTCC multilayer circuit board (107) is provided at the lower inside of the housing (108). A four-bit delay MMIC chip (103) is disposed in the middle of the HTCC multilayer circuit board (107), a wave controller chip (106) is disposed on the right side of the four-bit delay MMIC chip (103), and a receive-transmit link is disposed on one side of the wave controller chip (106).

2. The BGA delay drive component based on HTCC technology according to claim 1, characterized in that, The receive-transmit link includes a single-pole double-throw switch chip (109), a low-noise amplifier chip (113), a drive amplifier chip (110), a temperature-compensated attenuator chip (112), an equalizer chip (111), and a power modulator chip (102).

3. A BGA delay drive component based on HTCC technology according to claim 2, characterized in that, The wave control chip (106) is installed on the right side of the four-bit delay MMIC chip (103). The low noise amplifier chip (113), temperature compensated attenuator chip (112), equalizer chip (111) and power modulator chip (102) are all disposed above the HTCC multilayer circuit board (107). The drive amplifier chip (110) and the power modulator chip (102) are connected. The power modulator chip (102) provides the BGA delay drive component with the power modulation signal of the drive amplifier chip (110) in its transmission path and the power modulation signal of the low noise amplifier chip (113) in its receiving path.

4. A BGA delay drive component based on HTCC technology according to claim 3, characterized in that, The low-noise amplifier chip (113) is powered by a +5V power supply and the power modulation signal of the power modulator chip (102) regulates the signal amplification and noise suppression of the BGA delay drive component. The drive amplifier chip (110) is powered by a +5V power supply and the power modulation signal of the power modulator chip (102) realizes the power drive amplification of the BGA delay drive component.

5. A BGA delay drive component based on HTCC technology according to claim 4, characterized in that, The HTCC multilayer circuit board (107) is composed of a 10-layer circuit board lamination structure, and the top surface of the HTCC multilayer circuit board (107) is provided with corresponding functional solid-state microwave devices.

6. A BGA delay drive component based on HTCC technology according to claim 5, characterized in that, The HTCC multilayer circuit board (107) has a Top Layer on its top and a Bottom Layer on its bottom.

7. A BGA delay drive component based on HTCC technology according to claim 6, characterized in that, The corresponding functional solid-state microwave device is soldered onto the surface of the Top Layer, and the Bottom Layer consists of 199 BGA solder joints.

8. A BGA delay drive component based on HTCC technology according to claim 7, characterized in that, The 199 BGA solder points include antenna port BGA solder balls (101) and common port BGA solder balls (104).

9. A BGA delay drive component based on HTCC technology according to claim 8, characterized in that, The temperature-compensated attenuator chip (112) automatically cancels the gain fluctuations of the corresponding functional solid-state microwave device caused by temperature changes, and the equalizer chip (111) automatically cancels the frequency selective distortion in the transmission path from the antenna port BGA solder ball (101) to the common terminal BGA solder ball (104).

10. A BGA delay drive component based on HTCC technology according to claim 9, characterized in that, The shell (108) and cover plate (105) are made of Kova alloy material.

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