Wafer bearing device, control method thereof and semiconductor processing equipment

Abstract

The invention provides a wafer bearing device and a control method thereof, and semiconductor processing equipment, the wafer bearing device comprises a chuck body, the chuck body is used for bearing a frame bearing body, the frame bearing body comprises an annular frame made of metal and a bearing body arranged at the inner side of the annular frame and used for bearing a wafer, and the wafer bearing device also comprises a magnetic adsorption assembly, the magnetic adsorption assembly is arranged below the bearing face of the chuck body and used for adsorbing and fixing the annular frame to the bearing face by generating magnetic force. According to the scheme, the frame bearing body can be firmly fixed on the chuck body, so that the temperature uniformity and inter-wafer process uniformity of wafers borne by the frame bearing body can be ensured, the wafer bonding phenomenon caused by electrostatic charge accumulation on the wafers does not exist, and the risk that the frame bearing body cannot be taken out or fragments are generated can be avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more specifically, to a wafer carrier device and its control method, and semiconductor processing equipment. Background Technology

[0002] Plasma etching is a widely used etching method in the semiconductor industry. The method of dicing processed wafers into discrete chips using plasma etching is called plasma dicing. Plasma dicing offers superior cutting precision compared to diamond sawing and laser cutting, maximizing the utilization of the wafer surface. Currently, a frame carrier is used to support the bare silicon wafer before dicing; this frame carrier and the wafer it supports are generally referred to as a framed wafer.

[0003] like Figure 1 As shown, the framed wafer includes a ring-shaped frame 101 made of metal and a carrier 102 disposed inside the ring-shaped frame 101, which carries the wafer 103. The carrier 102 is typically made of a polymer material, which can be simply referred to as a UV film. The material of the ring-shaped frame 101 includes, for example, stainless iron. The carried wafer 103 is mostly a silicon wafer or other related compound.

[0004] During plasma etching of wafers, to ensure more uniform wafer temperature and prevent helium leakage, an electrostatic chuck is typically used. A high DC voltage is applied through DC electrodes to generate electrostatic adsorption, firmly securing the wafer. However, during plasma dicing, the framed wafer is placed entirely onto an electrostatic chuck within the chamber. Because the bottom of the framed wafer is a UV film, which is a semiconductor material with high resistivity and low adsorption force, it is more difficult to adsorb compared to silicon wafers. Therefore, using a conventional electrostatic chuck may result in unstable adsorption or failure to adhere properly, preventing the wafer from being firmly secured and affecting wafer temperature uniformity and inter-wafer process uniformity. Furthermore, even increasing the adsorption voltage cannot guarantee successful adsorption every time. Excessive adsorption voltage can also lead to the accumulation of electrostatic charge on the wafer. If this accumulated charge is not completely released, wafer sticking may occur after the process, making it impossible to remove the framed wafer or risking fragmentation. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a wafer carrier device and its control method, as well as semiconductor processing equipment, which can solve the problem of unstable or unsuccessful wafer adsorption in the prior art.

[0006] To achieve the purpose of this invention, a wafer carrier device is provided, including a chuck body for carrying a frame carrier. The frame carrier includes an annular frame made of metal and a carrier disposed inside the annular frame for carrying a wafer. The device also includes a magnetic adsorption component disposed below the bearing surface of the chuck body for attracting and fixing the annular frame to the bearing surface by generating magnetic force.

[0007] In some embodiments, the magnetic adsorption assembly includes an electromagnetic module disposed below the annular frame, which generates a magnetic force capable of adsorbing the annular frame when energized.

[0008] In some embodiments, there are multiple electromagnetic modules, which are distributed at circumferential intervals along the annular frame.

[0009] In some embodiments, the electromagnetic module includes a magnetic core and a coil wound around the magnetic core, the coil being used for electrical connection to a DC power supply.

[0010] In some embodiments, the electromagnetic module further includes a fixing member, which is fixed to the chuck body; and the fixing member is provided with a threaded hole, and the outer periphery of the magnetic core is provided with an external thread, and the magnetic core is connected to the fixing member through the cooperation of the external thread and the threaded hole.

[0011] In some embodiments, the electromagnetic module further includes a magnetic force adjustment module for selectively connecting at least one turn of the coil to the DC power supply.

[0012] In some embodiments, the magnetic force adjustment module includes a first branch, a second branch, and a first switch and a second switch respectively disposed on the first branch and the second branch; one end of the first branch and the second branch are both electrically connected to the DC power supply, and the other end of the first branch and the second branch are electrically connected to positions of corresponding different numbers of turns of the coil; one end of the coil is electrically connected to the DC power supply; the first switch is used to turn the first branch on or off; the second switch is used to turn the second branch on or off.

[0013] In some embodiments, the magnetic adsorption assembly further includes a current regulation module connected in series between the coil and the DC power supply, for adjusting the current magnitude in the circuit where the coil and the DC power supply are located.

[0014] In some embodiments, the magnetic adsorption assembly further includes a current direction switching module, which is used to switch the current direction in the circuit where the coil and the DC power supply are located.

[0015] In some embodiments, the current direction switching module includes two third branches, two fourth branches, a third switch disposed on each of the third branches, and a fourth switch disposed on each of the fourth branches. One end of one of the third branches is electrically connected to the positive terminal of the DC power supply, and the other end is electrically connected to the first terminal of the coil. One end of the other third branch is electrically connected to the negative terminal of the DC power supply, and the other end is electrically connected to the second terminal of the coil.

[0016] One end of one of the fourth branches is electrically connected to the positive terminal of the DC power supply, and the other end is electrically connected to the second terminal of the coil; one end of the other fourth branch is electrically connected to the negative terminal of the DC power supply, and the other end is electrically connected to the first terminal of the coil.

[0017] In some embodiments, the current direction switching module further includes a first relay and a second relay, wherein the first relay is used to control the two third switches to close when energized; and the second relay is used to control the two fourth switches to close when energized.

[0018] As another technical solution, the present invention also provides a semiconductor processing apparatus, including a process chamber and a wafer carrier device disposed in the process chamber, wherein the wafer carrier device adopts the wafer carrier device provided by the present invention.

[0019] As another technical solution, the present invention also provides a control method for a wafer carrier device, applied to the wafer carrier device provided by the present invention, the control method comprising:

[0020] After the frame carrier is placed on the bearing surface of the chuck body, the magnetic adsorption component is controlled to generate magnetic force to adsorb and fix the annular frame of the frame carrier to the bearing surface.

[0021] The present invention has the following beneficial effects:

[0022] The wafer carrier device provided by the present invention uses a control method that uses the magnetic force generated by the magnetic adsorption component to adsorb and fix the annular frame to the bearing surface of the chuck body. This not only firmly fixes the frame carrier to the chuck body, thereby ensuring the temperature uniformity and inter-wafer process uniformity of the wafer carried by the frame carrier, but also eliminates the wafer sticking phenomenon caused by the accumulation of electrostatic charge on the wafer, thus avoiding the risk of the frame carrier being unable to be removed or breaking.

[0023] The semiconductor processing equipment provided by the present invention, by adopting the wafer carrier device provided by the present invention, can not only firmly fix the frame carrier to the chuck body, thereby ensuring the temperature uniformity and inter-wafer process uniformity of the wafer carried by the frame carrier, but also eliminate the wafer sticking phenomenon caused by the accumulation of electrostatic charge on the wafer, thereby avoiding the risk of the frame carrier being unable to be removed or becoming fragmented. Attached Figure Description

[0024] Figure 1 This is a top view of the frame support structure;

[0025] Figure 2 This is a partial sectional view of the frame support structure;

[0026] Figure 3 A perspective view of the wafer carrier device provided in an embodiment of the present invention;

[0027] Figure 4 This is a cross-sectional view of a wafer carrier device provided in an embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram showing the positional relationship between the magnetic adsorption component and the annular frame used in an embodiment of the present invention;

[0029] Figure 6 This is a partial cross-sectional view of the wafer carrier device provided in an embodiment of the present invention;

[0030] Figure 7 This is a perspective view of the electromagnetic module used in an embodiment of the present invention;

[0031] Figure 8 This is a perspective view of the fastener used in an embodiment of the present invention;

[0032] Figure 9 This is a circuit diagram of a magnetic adsorption component used in an embodiment of the present invention;

[0033] Figure 10 This is another circuit diagram of the magnetic adsorption component used in an embodiment of the present invention;

[0034] Figure 11 A cross-sectional view of a semiconductor processing apparatus provided in an embodiment of the present invention;

[0035] Figure 12 This is a flowchart illustrating how a frame carrier is fixed to a chuck body using a magnetic adsorption component, according to an embodiment of the present invention. Detailed Implementation

[0036] To enable those skilled in the art to better understand the technical solution of the present invention, the control method of the wafer carrier device and the semiconductor processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0037] This invention provides a wafer carrier device for supporting a frame carrier, such as... Figure 1 and Figure 2 As shown, the frame carrier is used, for example, to support a wafer 103 (e.g., a bare silicon wafer) before plasma dicing. The frame carrier and the wafer 103 it supports are generally referred to as a framed wafer. A framed wafer typically includes an annular frame 101 made of metal and a carrier 102 disposed inside the annular frame 101, supporting the wafer 103. The carrier 102 is typically made of a polymer material, which can be simply referred to as a UV film. The material of the annular frame 101 includes, for example, stainless iron. The supported wafer 103 is mostly a silicon wafer or other related compounds.

[0038] Please refer to the following: Figure 3 and Figure 4 The wafer carrier 200 includes a chuck body 210 and a magnetic adsorption assembly 220. The chuck body 210 supports the frame carrier. The chuck body 210 may include, for example, a base 215 and an insulating layer 211 disposed above the base 215. The insulating layer 211 may be made of, for example, ceramic. A heating element (not shown) may be disposed in the insulating layer 211 for heating the wafer 103. A cooling water channel 217 may be disposed in the base 215 for supplying cooling water to cool the wafer 103. The inlet and outlet of the cooling water channel 217 are located at the bottom of the base 215 and are respectively connected to one end of an inlet pipe 212 and an outlet pipe 213. The other ends of the inlet pipe 212 and the outlet pipe 213 are connected to a cooling water supply source (not shown) to achieve circulating flow of cooling water. Additionally, the base 215 and the insulating layer 211 may be provided with a back-blowing channel (not shown in the figure). The outlet end of the back-blowing channel is located on the upper surface (i.e., the bearing surface) of the insulating layer 211, and the inlet end of the back-blowing channel is located at the bottom of the base 215 and is used to connect to one end of the back-blowing pipe 214. The other end of the back-blowing pipe 214 is connected to a back-blowing gas supply source (not shown in the figure). The back-blowing gas provided by the back-blowing gas supply source is introduced into the gap between the frame support and the bearing surface (for example, a uniform gas channel is formed on the bearing surface) through the back-blowing pipe 214 and the back-blowing channel. The back-blowing gas can conduct heat between the insulating layer 211 and the frame support, thereby combining with the heating element and cooling water channel to control the temperature and temperature uniformity of the wafer 103.

[0039] The magnetic adsorption component 220 is disposed below the bearing surface of the chuck body 210 and is used to adsorb and fix the annular frame 101 to the bearing surface by generating magnetic force. Since the annular frame 101 is usually made of ferrous metal, such as stainless iron, it will be attracted by the magnetic field generated by the magnetic adsorption component 220, and thus can be firmly fixed to the chuck body 210.

[0040] The wafer carrier device 200 provided in this embodiment of the invention can not only firmly fix the frame carrier to the chuck body 210, thereby ensuring the temperature uniformity and inter-wafer process uniformity of the wafer 103 carried by the frame carrier, but also eliminate the wafer sticking phenomenon caused by the accumulation of electrostatic charge on the wafer 103, thereby avoiding the risk of the frame carrier being unable to be removed or becoming fragmented.

[0041] In some embodiments, the magnetic adsorption assembly 220 includes an electromagnetic module 220a disposed below the annular frame 101, which generates a magnetic force capable of adsorbing the annular frame 101 when energized. By employing the electromagnetic module 220a, magnetic force is generated only when current flows through it; there is no magnetism and no magnetic force is generated when no current flows through it. Compared to the prior art, which applies an adsorption voltage to the DC electrode during adsorption and a reverse voltage to the DC electrode during desorption, this eliminates the wafer sticking phenomenon caused by the accumulation of electrostatic charge on the wafer 103, thereby avoiding the risk of the frame carrier being unable to be removed or fragmentation.

[0042] In some embodiments, there are multiple electromagnetic modules 220a, which are distributed at intervals along the circumference of the annular frame 101. This allows for the uniform generation of magnetic force to attract the annular frame 101 along its circumference, resulting in uniform force distribution on the annular frame 101 and further improving the fixation reliability. For example, there are 3 to 6 electromagnetic modules 220a, preferably 4.

[0043] In some embodiments, such as Figure 5 As shown, each electromagnetic module 220a can be positioned directly below the annular frame 101, or most of each electromagnetic module 220a can be positioned directly below the annular frame 101, so as to ensure that the generated magnetic force acts on the annular frame 101 as much as possible.

[0044] Please refer to the following: Figure 6 and Figure 7 The electromagnetic module 220a, which performs the above functions, includes, for example, a magnetic core 221 and a coil 222 wound around the magnetic core 221. The coil 222 is electrically connected to a DC power supply (not shown in the figure). When the DC power supply energizes the coil 222, a magnetic field is generated around the coil 222. The magnetic core 221 is made of a magnetic material to concentrate the magnetic flux and form a stronger magnetic field. Magnetic materials include, for example, ferrite cores 221, iron powder cores, manganese-zinc ferrite, nickel-zinc ferrite, etc. The magnetic core 221 is, for example, cylindrical, polygonal, etc. The axis of the cylindrical magnetic core 221 is, for example, perpendicular to the bearing surface to ensure that the generated magnetic force acts on the annular frame 101 as much as possible.

[0045] In some embodiments, such as Figure 6 and Figure 8 As shown, the electromagnetic module 220a also includes a fixing member 223, which is fixed to the chuck body 210. The fixing member 223 has a threaded hole 223d, and the outer periphery of the magnetic core 221 has an external thread 221a. The magnetic core 221 is connected to the fixing member 223 through the engagement of the external thread 221a and the threaded hole 223d. In other words, the magnetic core 221 can be threadedly connected to the fixing member 223. Specifically, the fixing member 223 may be, for example, a Z-shaped fixing plate, consisting of two horizontal sub-plates (223a, 223b) and a vertical sub-plate 223c. The two horizontal sub-plates (223a, 223b) are parallel to the bearing surface and are respectively connected to the upper and lower ends of the vertical sub-plate 223c. The two horizontal sub-plates (223a, 223b) extend from the vertical sub-plate 223c in opposite horizontal directions. A horizontal sub-plate 223a, connected to the upper end of the vertical sub-plate 223c, is stacked on the bottom of the base 215 and is provided with at least one mounting hole 223e, for example... Figure 8 Two mounting holes 223e are shown, and the horizontal sub-plate 223a can be fixed to the bottom of the base 215 by passing a fastener through the mounting holes 223e and fixing it to the base 215. For example, a threaded hole is provided on the base 215, which corresponds to the mounting hole 223a. The fastener is a fastening screw, which passes through the mounting hole 223a and is threaded into the threaded hole. Based on this, a horizontal sub-plate 223b connected to the lower end of the vertical sub-plate 223c is provided at an interval below the base 215. The horizontal sub-plate 223b is provided with a threaded hole 223d. The lower end of the magnetic core 221 is threaded into the threaded hole 223d through its external thread 221a. The upper end of the magnetic core 221 passes through a through hole 216 corresponding to that provided in the base 215 (e.g., ...). Figure 6 (As shown), and extends to the lower surface of the insulating layer 211. The wall of the through hole 216 is spaced apart from the outer peripheral surface of the magnetic core 221 to provide sufficient accommodating space for the coil 222 wound around the magnetic core 221.

[0046] It should be noted that the embodiments of the present invention are not limited to using the above-described method to achieve a fixed connection between the magnetic core 221 and the chuck body 210. In practical applications, any other fixing method can be used, and the embodiments of the present invention do not have any particular limitations on this.

[0047] In some embodiments, please refer to Figure 9The electromagnetic module 220a also includes a magnetic force adjustment module 224, which is used to selectively connect at least one turn of the coil 222 to the DC power supply. That is, at least a portion of the coil 222 is connected to the DC power supply; when the DC power supply is turned on, current flows through the portion of the coil 222 connected to the DC power supply, while no current flows through the portion not connected to the DC power supply. For example, the coil 222 may include multiple sub-coils connected in series; the magnetic force adjustment module 224 is used to selectively connect at least one sub-coil to the DC power supply, and the number of turns of the coil connected to the DC power supply is the sum of the number of turns of these sub-coils. Alternatively, the coil 222 may include multiple sub-coils with different numbers of turns connected in parallel; the magnetic force adjustment module 224 is used to selectively connect one of these sub-coils to the DC power supply, and the number of turns of the coil connected to the DC power supply is the sum of the number of turns of the sub-coil connected to the DC power supply.

[0048] Under the same conditions of other parameters (such as current magnitude), the more turns of the coil that are connected to the DC power supply, the greater the magnetic force generated. Based on this, the magnitude of the magnetic force can be adjusted by selectively connecting at least one turn of the coil 222 to the DC power supply, thereby accommodating ring frames 101 of different specifications. It should be noted that the thickness and iron content of ring frames 101 of different specifications may vary, which requires adjusting the magnitude of the magnetic force to ensure that there is sufficient magnetic force to firmly fix ring frames 101 of different specifications to the chuck body 210.

[0049] In embodiments where coil 222 includes multiple sub-coils connected in series, the magnetic force adjustment module 224, which implements the above-described functions, includes, for example, multiple branches and a switch on each branch. One end of each branch is electrically connected to a DC power supply, and the other end of each branch is electrically connected to a position of a corresponding number of turns in coil 222. One end of coil 222 is electrically connected to a DC power supply; the switch is used to connect or disconnect the branch. For example, as... Figure 9 As shown, the magnetic force adjustment module 224 includes a first branch 224a, a second branch 224b, and a first switch SB05 and a second switch SB06 respectively disposed on both branches. One end of both the first branch 224a and the second branch 224b is electrically connected to a DC power supply. The other end of the first branch 224a is electrically connected to a designated position B of the coil 222; the other end of the second branch 224b is electrically connected to a designated position C of the coil 222. Designated positions B and C correspond to different numbers of turns in the coil 222, meaning the number of coil turns connected to the circuit is different. One end of the coil 222 is electrically connected to a DC power supply. The first switch SB05 is used to connect or disconnect the first branch 224a. The second switch SB06 is used to connect or disconnect the second branch 224b. Figure 9As shown, designated position C is located at the other end of coil 222 away from the end that is electrically connected to the DC power supply, and designated position B is located between the end of coil 222 that is electrically connected to the DC power supply and designated position C.

[0050] Since the first switch SB05 and the second switch SB06 are respectively connected to positions of different numbers of turns in coil 222, the number of coil turns connected to the DC power supply changes when switching between the branches where the first switch SB05 and the second switch SB06 are turned on. Therefore, by selectively closing the first switch SB05 or the second switch SB06 to connect the first branch 224a or the second branch 224b, the magnetic force can be adjusted. It should be noted that this embodiment is an example with two branches (i.e., the first branch 224a and the second branch 224b). However, the embodiments of the present invention are not limited to this. In practical applications, there can be three or more branches.

[0051] In a specific embodiment, such as Figure 9 As shown, the first end of coil 222 is electrically connected to a DC power supply. A first branch 224a is connected to a designated position B of coil 222, located between the first and second ends. A second branch 224b is connected to the second end of coil 222 (i.e., designated position C). The number of turns between the first end of coil 222 and designated position B is N1, and the number of turns between the second end of coil 222 and designated position B is N2. In this case, when the first switch SB05 connected to the first branch 224a at designated position B is closed, the number of coil turns electrically connected to the DC power supply is N1; when the second switch SB06 connected to the second branch 224b at the second end of coil 222 is closed, the number of coil turns electrically connected to the DC power supply is N1 + N2. The total number of turns of coil 222 (i.e., N1 + N2) is, for example, 20-50 turns. It should be noted that the above switches can be manually controlled or automatically controlled by a controller. This controller is, for example, a relay.

[0052] In embodiments where coil 222 includes multiple sub-coils with different numbers of turns connected in parallel, the magnetic force adjustment module for implementing the above functions includes, for example, multiple branches and a switch on each branch. The multiple branches, connected in parallel, are all used for electrical connection to a DC power supply. The multiple sub-coils with different numbers of turns of coil 222 are correspondingly arranged on the multiple branches. There are multiple magnetic cores 221, and each sub-coil is wound around a corresponding magnetic core 221. The switch is used to connect or disconnect the branch it belongs to.

[0053] For example, such as Figure 10As shown, the magnetic force adjustment module 224' includes a first branch 224a', a second branch 224b', and a first switch SB05' and a second switch SB06' respectively disposed on the first and second branches. The first branch 224a' and the second branch 224b' are connected in parallel and are both used for electrical connection to a DC power supply. The coil 222 includes a first sub-coil 222a and a second sub-coil 222b, which are respectively disposed on the first branch 224a' and the second branch 224b', and have different numbers of turns. Specifically, the first sub-coil 222a has N1+N2 turns, and the second sub-coil 222b has N1 turns. When switching between the branches connected by the first switch SB05' and the second switch SB06', one of the sub-coils can be selectively connected to the DC power supply. The number of turns of the coil connected to the DC power supply is the number of turns of the sub-coil connected to the DC power supply. Since the number of turns of the first sub-coil 222a and the second sub-coil 222b is different, this causes the number of turns of the coil connected to the DC power supply to vary. Therefore, by selectively closing the first switch SB05' or the second switch SB06' to connect the first branch 224a or the second branch 224b, the magnetic force can be adjusted. It should be noted that this embodiment is an example with two branches (i.e., the first branch 224a' and the second branch 224b'), but the embodiments of the present invention are not limited to this. In practical applications, there can be three or more branches. In a specific embodiment, such as Figure 10 As shown, when the first switch SB05' is closed, the number of coil turns connected to the DC power supply is N1 + N2; when the second switch SB06' is closed, the number of coil turns connected to the DC power supply is N1. It should be noted that the above switches can be controlled manually or automatically by a controller. This controller can be, for example, a relay.

[0054] It should also be noted that in this embodiment, there are multiple magnetic cores 221, and each sub-coil is wound around each magnetic core 221 in a corresponding manner. However, the embodiments of the present invention are not limited to this. In practical applications, multiple sub-coils can also be wound on the same magnetic core 221, and the winding method can be, for example, side-by-side winding or sequential winding along the axial direction of the magnetic core 221, etc. The embodiments of the present invention do not limit the winding method of multiple sub-coils, as long as the multiple sub-coils can be connected to the circuit in parallel with each other.

[0055] In some embodiments, the magnetic adsorption assembly 220 further includes a current adjustment module 225, which is connected in series between the coil 222 and the DC power supply to adjust the current in the circuit containing the coil 222 and the DC power supply. By adjusting the current in the circuit containing the coil 222 and the DC power supply, the magnitude of the magnetic force can be adjusted to ensure that there is sufficient magnetic force to firmly fix the annular frames 101 of different specifications to the chuck body 210.

[0056] The current regulation module 225, which achieves the above functions, includes, for example, an adjustable resistor R connected in series between the coil 222 and the DC power supply. According to the formula I = U / R, by decreasing or increasing the resistance of the adjustable resistor R in the circuit containing the coil 222 and the DC power supply, the current in that circuit can be adjusted. Furthermore, the current regulation module 225 may also include an ammeter A connected in series between the coil 222 and the DC power supply to detect the magnitude and direction of the current in the circuit containing the coil 222 and the DC power supply.

[0057] In some embodiments, the magnetic adsorption assembly 220 further includes a current direction switching module 226, which is used to switch the current direction in the circuit where the coil 222 and the DC power supply are located. Since the magnetic polarity of the electromagnetic module 220a is related to the direction of the current flowing through the coil 222, the magnetic polarity of the electromagnetic module 220a can be switched by switching the current direction in the circuit where the coil 222 and the DC power supply are located. If the electromagnetic module 220a maintains the same magnetic polarity, it can easily lead to magnetization of the frame carrier during multi-wafer continuous processing, causing it to lose its adsorption capacity. Therefore, by switching the current direction in the circuit where the coil 222 and the DC power supply are located using the current direction switching module 226, magnetization of the frame carrier and loss of its adsorption capacity can be prevented.

[0058] The current direction switching module 226, which realizes the above functions, includes, for example, two third branches 226a, two fourth branches 226b, third switches (SB01, SB02) disposed on the two third branches 226a, and fourth switches (SB03, SB04) disposed on the two fourth branches 226b. One end of one third branch 226a is electrically connected to the positive terminal of the DC power supply, and the other end is electrically connected to the first terminal of the coil 222; one end of the other third branch 226a is electrically connected to the negative terminal of the DC power supply, and the other end is electrically connected to the second terminal of the coil 222; one end of one fourth branch 226b is electrically connected to the positive terminal of the DC power supply, and the other end is electrically connected to the second terminal of the coil 222; one end of the other fourth branch 226b is electrically connected to the negative terminal of the DC power supply, and the other end is electrically connected to the first terminal of the coil 222. When the third switches (SB01, SB02) on the two third branches 226a are closed, the positive terminal of the DC power supply is electrically connected to the first end of the coil 222, and the negative terminal is electrically connected to the second end of the coil 222; when the fourth switches (SB03, SB04) on the two fourth branches 226b are closed, the positive terminal of the DC power supply is electrically connected to the second end of the coil 222, and the negative terminal is electrically connected to the first end of the coil 222. Thus, by switching between simultaneously connecting the two third branches 226a and simultaneously connecting the two fourth branches 226b, the direction of the current in the circuit containing the coil 222 and the DC power supply can be switched, thereby switching the magnetic pole nature of the electromagnetic module 220a.

[0059] It should be noted that the aforementioned third switches (SB01, SB02) and fourth switches (SB03, SB04) can be controlled manually or automatically by a controller. This controller can be, for example, a relay. In some embodiments, the current direction switching module 226 further includes a first relay KA01 and a second relay KA02, wherein the first relay KA01 controls the closing of the two third switches (SB01, SB02) when energized; and the second relay KA02 controls the closing of the two fourth switches (SB03, SB04) when energized.

[0060] In embodiments where the wafer carrier 200 is equipped with a back-blowing channel, the flow rate of the back-blowing gas can be measured by a flow sensor to determine whether the frame carrier is fixed to the chuck body 210. In a specific embodiment, if the flow rate of the back-blowing gas exceeds a preset threshold (e.g., 2 sccm), it is confirmed that the frame carrier is not fixed to the chuck body 210. In this case, the magnetic force can be increased by adjusting the number of turns of the coil 222 connected to the DC power supply and / or the current in the circuit where the coil 222 and the DC power supply are located, until the frame carrier is fixed to the chuck body 210.

[0061] In summary, the wafer carrier device 200 provided in this embodiment of the invention uses the magnetic force generated by the magnetic adsorption component 220 to adsorb and fix the annular frame 101 to the bearing surface of the chuck body 210. This not only firmly fixes the frame carrier to the chuck body 210, thereby ensuring the temperature uniformity and inter-wafer process uniformity of the wafer 103 carried by the frame carrier, but also eliminates the wafer sticking phenomenon caused by the accumulation of electrostatic charge on the wafer 103, thus avoiding the risk of the frame carrier being unable to be removed or breaking.

[0062] As another technical solution, this embodiment of the invention also provides a semiconductor processing apparatus, including a process chamber and a wafer carrier device 200 disposed in the process chamber, wherein the wafer carrier device 200 adopts the wafer carrier device 200 provided in this embodiment of the invention.

[0063] The semiconductor processing equipment provided in this embodiment of the invention, by employing the wafer carrier device 200 provided in this embodiment of the invention, can not only firmly fix the frame carrier to the chuck body 210, thereby ensuring the temperature uniformity and inter-wafer process uniformity of the wafer 103 carried by the frame carrier, but also eliminate the wafer sticking phenomenon caused by the accumulation of electrostatic charge on the wafer 103, thereby avoiding the risk of the frame carrier being unable to be removed or becoming fragmented.

[0064] As another technical solution, this embodiment of the invention also provides a control method for a wafer carrier device, applied to the wafer carrier device provided in this embodiment of the invention, the control method comprising:

[0065] After the frame carrier is placed on the bearing surface of the chuck body 210, the magnetic adsorption assembly 220 is controlled to generate magnetic force to adsorb and fix the annular frame of the frame carrier to the bearing surface.

[0066] In one specific embodiment, please refer to Figure 12 and combined Figures 3 to 11 Before performing the plasma cutting process, the specific procedures of the above control method include, for example:

[0067] Step 1: When the process environment meets the requirements, the framed wafer (i.e., the frame carrier and the wafer it carries) is transferred into the process chamber 300 and placed on the carrier surface of the chuck body 210.

[0068] For example, a robotic arm and a pin mechanism can be used together to achieve the above film placement operation.

[0069] Step 2: Determine if the chuck body has a framed wafer; if so, turn on the DC power and proceed to Step 3; if not, the process ends.

[0070] Step 3: Determine if the current direction has changed. If yes, change the current direction; otherwise, proceed to step 4.

[0071] Step 4: Adjust the current, for example by adjusting the current magnitude through an adjustable resistor R;

[0072] Step 5: Determine if the number of coil turns has been adjusted. If yes, adjust the number of coil turns using the magnetic adjustment module 224, and then proceed to step 6; otherwise, proceed to step 6.

[0073] Step 6: The electromagnetic module 220 generates magnetic force to firmly fix the frame carrier to the chuck body 210;

[0074] Step 7: Measure the flow rate of the back-blown gas using a flow sensor to determine whether the frame support has been fixed to the chuck body 210; if yes, proceed with the plasma cutting process; if no, return to step 4.

[0075] The control method of the wafer carrier device provided in this embodiment of the invention can not only firmly fix the frame carrier to the chuck body 210, thereby ensuring the temperature uniformity and inter-wafer process uniformity of the wafer carried by the frame carrier, but also eliminate the wafer sticking phenomenon caused by the accumulation of electrostatic charge on the wafer, thereby avoiding the risk of the frame carrier being unable to be removed or breaking.

[0076] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A wafer carrier device, comprising a chuck body for carrying a frame carrier, the frame carrier comprising an annular frame made of metal and a carrier disposed inside the annular frame for carrying a wafer, characterized in that, It also includes a magnetic adsorption component, which is disposed below the bearing surface of the chuck body and is used to adsorb and fix the annular frame to the bearing surface by generating magnetic force.

2. The wafer carrier device according to claim 1, characterized in that, The magnetic adsorption component includes an electromagnetic module, which is disposed below the annular frame and is used to generate a magnetic force capable of adsorbing the annular frame when energized.

3. The wafer carrier device according to claim 2, characterized in that, The electromagnetic modules are multiple and are distributed at intervals along the circumference of the annular frame.

4. The wafer carrier device according to claim 2, characterized in that, The electromagnetic module includes a magnetic core and a coil wound around the magnetic core, the coil being used for electrical connection to a DC power supply.

5. The wafer carrier device according to claim 4, characterized in that, The electromagnetic module also includes a fixing member, which is fixed to the chuck body; and the fixing member is provided with a threaded hole, and the outer periphery of the magnetic core is provided with an external thread, and the magnetic core is connected to the fixing member through the cooperation of the external thread and the threaded hole.

6. The wafer carrier device according to claim 4, characterized in that, The electromagnetic module further includes a magnetic force adjustment module, which is used to selectively connect at least one turn of the coil to the DC power supply.

7. The wafer carrier device according to claim 6, characterized in that, The magnetic force adjustment module includes a first branch, a second branch, and a first switch and a second switch respectively disposed on the first branch and the second branch; one end of the first branch and the second branch are both used to be electrically connected to the DC power supply, and the other end of the first branch and the second branch are electrically connected to positions of corresponding different numbers of turns of the coil; one end of the coil is used to be electrically connected to the DC power supply; the first switch is used to turn the first branch on or off; the second switch is used to turn the second branch on or off.

8. The wafer carrier device according to claim 4, characterized in that, The magnetic adsorption assembly also includes a current adjustment module, which is connected in series between the coil and the DC power supply to adjust the current in the circuit where the coil and the DC power supply are located.

9. The wafer carrier device according to claim 4, characterized in that, The magnetic adsorption assembly also includes a current direction switching module, which is used to switch the current direction in the circuit where the coil and the DC power supply are located.

10. The wafer carrier device according to claim 9, characterized in that, The current direction switching module includes two third branches, two fourth branches, a third switch on each of the third branches, and a fourth switch on each of the fourth branches. One end of one of the third branches is electrically connected to the positive terminal of the DC power supply, and the other end is electrically connected to the first terminal of the coil. One end of the other third branch is electrically connected to the negative terminal of the DC power supply, and the other end is electrically connected to the second terminal of the coil. One end of one of the fourth branches is electrically connected to the positive terminal of the DC power supply, and the other end is electrically connected to the second terminal of the coil; one end of the other fourth branch is electrically connected to the negative terminal of the DC power supply, and the other end is electrically connected to the first terminal of the coil.

11. The wafer carrier device according to claim 10, characterized in that, The current direction switching module further includes a first relay and a second relay, wherein the first relay is used to control the two third switches to close when energized; and the second relay is used to control the two fourth switches to close when energized.

12. A semiconductor processing apparatus, comprising a process chamber, characterized in that, It also includes a wafer carrier device disposed in the process chamber, wherein the wafer carrier device is the wafer carrier device as described in any one of claims 1-11.

13. A control method for a wafer carrier device, characterized in that, The control method, applied to the wafer carrier device as described in any one of claims 1-11, comprises: After the frame carrier is placed on the bearing surface of the chuck body, the magnetic adsorption component is controlled to generate magnetic force to adsorb and fix the annular frame of the frame carrier to the bearing surface.

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