Optoelectronic component having electrical path connected to electrical conductor layer through two dielectric layers

Abstract

The invention relates to an assembly (100) comprising: a. A dielectric layer A (103), b. A dielectric layer B (104), and c. An optical element layer (105); wherein the layer sequence further comprises a first electrically conductive layer (108); wherein at least a first region (110) of the first electrical conductor layer (108) and at least a first region (111) of the optical element layer (105) overlap each other; wherein a first electrical connection (113) extends through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and is electrically connected to the first electrical conductor layer (108); wherein the dielectric layer A (103) is less tolerant to a first etching method than the dielectric layer B (104), and the dielectric layer B (104) is less tolerant to another etching method than the dielectric layer A (103). The invention further relates to a method (700), an electronic device (1500) and a use of the assembly (100).

Description

Technical Field

[0001] The present invention relates to a component comprising a layer sequence comprising at least the following layers stacked one on top of the other in a given order from a first side of the component to an opposite side of the component:

[0002] a. Dielectric layer A,

[0003] b. Dielectric layer B, and

[0004] c. Optical element layer;

[0005] The layer sequence further includes a first electrical conductor layer; wherein, in a view in a first direction from the first side to the other side, at least a first region of the first electrical conductor layer and at least a first region of the optical element layer overlap each other; wherein a first layer surface of the dielectric layer A faces away from the dielectric layer B; wherein a first electrical connector extends from the first layer surface of the dielectric layer A through the dielectric layer A and at least partially through the dielectric layer B and is electrically connected to the first electrical conductor layer; wherein the dielectric layer A is less resistant to the first etching method than the dielectric layer B; and the dielectric layer B is less resistant to another etching method than the dielectric layer A. The invention further relates to a method, an electronic device, and use of the components. Background Technology

[0006] For example, optoelectronic devices such as modulators and photodetectors are important electronic components in optical communication systems, such as those transmitting data via optical fibers. Some important parameters of these devices are bandwidth, operating speed, extinction ratio, insertion loss, power consumption, responsivity, and footprint. One option is a silicon-based modulator. However, silicon-based modulators have several disadvantages. For example, they have narrow bandwidth. Furthermore, to integrate silicon-based modulators with other electronic components (such as CMOS integrated circuits), they must be manufactured as part of the front-end process. Additionally, silicon-based modulators cannot be easily integrated with newer technologies being developed in the electronics industry. This contrasts with graphene-based modulators, which have several advantages. For example, graphene-based modulators have a wider bandwidth than silicon-based modulators. Moreover, graphene-based modulators can be integrated with other electronic components as part of the back-end process without significant development for integration. Graphene-based modulators can also be more easily integrated with newer technologies in the electronics industry. Furthermore, graphene-based modulators allow for better use of surface area and therefore allow for more compact electronic devices or systems.

[0007] Manufacturing graphene-based optoelectronic devices remains challenging, specifically because graphene sheets, with their single-atom-layer thickness, are extremely fragile. In existing techniques, photolithography methods involving sacrificing a photoresist layer are used to form the vias, requiring metal stripping to create the vias for electrical connection to the graphene sheet. This method involves numerous steps, including applying a photoresist layer, irradiating and developing it, and then completely removing it with metal stripping at the end of the process. If the vias are to be fabricated to contact the graphene sheet, the sheet is exposed once the vias are formed. This means that the fragile single-atom-layer material is exposed to all subsequent steps involving chemically and mechanically cleaning the vias with etchants, as well as cleaning any remaining photoresist from the device precursor. The mechanical damage the graphene undergoes in these steps, and the chemical residues left on the graphene, negatively impact the performance of the optoelectronic device. Consequently, the scrap rate is excessively high in the production of graphene-based optoelectronic devices. Summary of the Invention

[0008] Therefore, the objective of this invention is to overcome at least one of the disadvantages encountered in the state-of-the-art technology.

[0009] Another object of the present invention is to provide an electronic device, such as a computing device or a memory, having optoelectronic components, wherein the design of the optoelectronic components allows for the production of the electronic device with a reduced scrap rate. Furthermore, an object of the present invention is to provide optoelectronic components, such as detectors, modulators, filters, interferometers, and calorimeters, that can be produced with a reduced scrap rate.

[0010] Another objective of this invention is to provide an optoelectronic component, such as a detector, modulator, filter, interferometer, and calorimeter, that can be manufactured while reducing the width of the performance distribution of all optoelectronic components of this type produced on the same wafer. Furthermore, an objective of this invention is to provide a photodetector that can be manufactured while reducing the width of the responsivity distribution of all photodetectors of this type produced on the same wafer. Additionally, an objective of this invention is to provide an optoelectronic modulator that can be manufactured while reducing the width of the modulation speed distribution of all modulators of this type produced on the same wafer.

[0011] Furthermore, the objective of this invention is to provide an optoelectronic component capable of encoding and / or decoding increased data streams.

[0012] Furthermore, the objective of this invention is to provide an optoelectronic component that can be produced with fewer process steps, fewer sacrificial layers, and / or fewer source materials.

[0013] Another objective of the present invention is to provide an optoelectronic component with improved light confinement in the waveguide and / or reduced crosstalk.

[0014] Another objective of the present invention is to provide one of the aforementioned advantageous optoelectronic components, wherein the component does not contain additional layers, is not subject to integrity degradation, has the widest possible bandwidth, can be integrated with other electronic components as part of a subsequent process without major development to achieve integration, can be easily integrated with the most advanced technologies in the electronics industry, and / or is as compact as possible.

[0015] Preferably, the above-mentioned optoelectronic device is graphene-based. Detailed Implementation

[0016] Any of the embodiments of the present invention contributes to at least partially achieving at least one of the above objectives, preferably more than one.

[0017] A first embodiment of the present invention is a component comprising a layer sequence, the layer sequence comprising at least the following layers stacked one on top of the other in a given order from a first side of the component to an opposite side of the component:

[0018] a. Dielectric layer A,

[0019] b. Dielectric layer B, and

[0020] c. Optical element layer;

[0021] The layer sequence further includes a first electrical conductor layer; wherein, in a view in a first direction from a first side to the other side, at least a first region of the first electrical conductor layer and at least a first region of the optical element layer overlap each other; wherein the first surface of dielectric layer A faces away from dielectric layer B; wherein a first electrical connector extends from the first surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B and is electrically connected to the first electrical conductor layer; wherein dielectric layer A is less resistant to the first etching method than dielectric layer B; and dielectric layer B is less resistant to another etching method than dielectric layer A.

[0022] The first etching method differs from another etching method. If an etching method has a lower / higher etching rate for the first layer or material than for the second layer or material, then the first layer or material is more / less resistant to this etching method than the second layer or material. In a preferred aspect of the first embodiment, the component is adapted and arranged such that a first side of the component and / or another side of the component faces the previous process layer. In this aspect, it is more preferable that the other side of the component is adapted and arranged to face the previous process layer. In a preferred aspect of the first embodiment, the component is adapted and arranged such that a first side of the component or the other side of the component faces the previous process layer. In this aspect, it is more preferable that the other side of the component faces the previous process layer. In a preferred aspect of the first embodiment, the first electrical connection does not extend to the other side of the component.

[0023] In a preferred embodiment of the component, at least one of the following (preferably each) applies:

[0024] a| The selectivity of the first etching method relative to dielectric layer B for dielectric layer A is greater than 1, preferably at least 5, more preferably at least 10, more preferably at least 20, more preferably at least 30, more preferably at least 40, more preferably at least 50, more preferably at least 60, more preferably at least 70, more preferably at least 80, even more preferably at least 90, and most preferably at least 100.

[0025] b| The selectivity of the first etching method relative to dielectric layer A for dielectric layer B is less than 1, preferably not greater than 1 / 5, more preferably not greater than 1 / 10, more preferably not greater than 1 / 20, more preferably not greater than 1 / 30, more preferably not greater than 1 / 40, more preferably not greater than 1 / 50, more preferably not greater than 1 / 60, more preferably not greater than 1 / 70, more preferably not greater than 1 / 80, even more preferably not greater than 1 / 90, and most preferably not greater than 1 / 100;

[0026] c| Another etching method has a selectivity of less than 1 relative to dielectric layer B for dielectric layer A, preferably not greater than 1 / 5, more preferably not greater than 1 / 10, more preferably not greater than 1 / 20, more preferably not greater than 1 / 30, more preferably not greater than 1 / 40, more preferably not greater than 1 / 50, more preferably not greater than 1 / 60, more preferably not greater than 1 / 70, more preferably not greater than 1 / 80, even more preferably not greater than 1 / 90, and most preferably not greater than 1 / 100;

[0027] d| Another etching method has a selectivity of more than 1 for dielectric layer B relative to dielectric layer A, preferably at least 5, more preferably at least 10, more preferably at least 20, more preferably at least 30, more preferably at least 40, more preferably at least 50, more preferably at least 60, more preferably at least 70, more preferably at least 80, even more preferably at least 90, and most preferably at least 100.

[0028] This preferred embodiment is the second embodiment of the present invention, which is preferably dependent on the first embodiment of the present invention.

[0029] The preferred combinations of the above items are a|c|, a|d|, b|c|, b|d|, a|c|, and a|b|c|d|.

[0030] In a preferred embodiment of the component, the first electrical conductor layer has a layer thickness of less than 1 µm, preferably less than 900 nm, more preferably less than 800 nm, more preferably less than 700 nm, more preferably less than 600 nm, more preferably less than 500 nm, more preferably less than 400 nm, more preferably less than 300 nm, more preferably less than 200 nm, more preferably less than 100 nm, more preferably less than 90 nm, more preferably less than 80 nm, more preferably less than 70 nm, more preferably less than 60 nm, more preferably less than 50 nm, more preferably less than 40 nm, more preferably less than 30 nm, more preferably less than 20 nm, more preferably less than 10 nm, more preferably less than 9 nm, more preferably less than 8 nm, more preferably less than 7 nm, more preferably less than 6 nm, more preferably less than 5 nm, more preferably less than 4 nm, more preferably less than 3 nm, more preferably less than 2 nm, and even more preferably less than 1 nm. This preferred embodiment is the third embodiment of the invention, which preferably depends on the first or second embodiment of the invention.

[0031] Preferably, the lower limit of the thickness of the first electrical conductor is the thickness of an atomic or molecular monolayer of the material of the first electrical conductor layer.

[0032] In a preferred embodiment of the component, the first electrical conductor layer comprises several atomic or molecular layers; wherein the number of atomic or molecular layers is at least 1, preferably in the range of 1 to 10, preferably 1 to 9, more preferably 1 to 8, more preferably 1 to 7, more preferably 1 to 6, more preferably 1 to 5, more preferably 1 to 4, more preferably 1 to 3, and even more preferably, the number of atomic or molecular layers is 1 or 2, most preferably 1. This preferred embodiment is the fourth embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0033] The atomic or molecular layers follow each other in the first direction. The preferred atomic layer is a carbon atom layer.

[0034] In a preferred embodiment of the component, the first electrical conductor layer is superimposed on the optical element layer on the side of the optical element layer facing the first side of the component, or on the side of the optical element layer facing the other side of the component, or both. This preferred embodiment is the fifth embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0035] In a preferred embodiment of the component, a first electrical conductor layer is disposed between the dielectric layer A and the optical element layer. This preferred embodiment is the sixth embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0036] In a preferred embodiment of the component, dielectric layer A comprises inorganic material A, preferably composed of inorganic material A, or dielectric layer B comprises inorganic material B, preferably composed of inorganic material B, or both. This preferred embodiment is the seventh embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0037] Inorganic material A is different from inorganic material B. Preferably, dielectric layer A comprises inorganic material A in a proportion of at least 50 wt.-%, more preferably at least 60 wt.-%, more preferably at least 70 wt.-%, more preferably at least 80 wt.-%, and even more preferably at least 90 wt.-%, based on the weight of dielectric layer A in each case. Alternatively or additionally, dielectric layer B preferably comprises inorganic material B in a proportion of at least 50 wt.-%, more preferably at least 60 wt.-%, more preferably at least 70 wt.-%, more preferably at least 80 wt.-%, and even more preferably at least 90 wt.-%, based on the weight of dielectric layer B in each case.

[0038] In a preferred embodiment of the component, dielectric layer A or dielectric layer B, or each of the two, is not a photoresist. This preferred embodiment is the eighth embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0039] In a preferred embodiment of the component, dielectric layer A is also less resistant to the first etching method than the photoresist. This preferred embodiment is the ninth embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0040] In a preferred embodiment of the component, the photoresist is a positive photoresist or a negative photoresist. This preferred embodiment is the tenth embodiment of the invention, which preferably depends on the ninth embodiment of the invention.

[0041] In a preferred embodiment of the component, the photoresist is selected from the group consisting of photopolymerizable photoresists, photodegradable photoresists, photocrosslinked photoresists, and self-organizing monolayer photoresists, or combinations thereof. This preferred embodiment is the eleventh embodiment of the invention, which preferably depends on the ninth or tenth embodiment of the invention.

[0042] In a preferred embodiment of the component, the photoresist is selected from the group consisting of methyl methacrylate, polyphthalaldehyde, photoacid generator (PAG), azidoquinone, phenolic resin, epoxy resin, non-stoichiometric thiolate (OSTE) polymer, hydrosilsesquioxane (HSQ), and benzocyclobutene (BCB), or combinations thereof. This preferred embodiment is the 12th embodiment of the invention, which preferably depends on any of the 9th to 11th embodiments of the invention.

[0043] The preferred azide quinone is diazonaphthoquinone (DNQ). The preferred epoxy resin is SU-8 photoresist.

[0044] In a preferred embodiment of the component, each of the first etching method or the other etching method, or both, is a dry etching method or a wet etching method, or a combination of both. This preferred embodiment is the 13th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0045] The preferred dry etching method is selected from the group consisting of atomic layer etching, plasma etching, and reactive ion etching, or at least a combination thereof. The preferred wet etching method is atomic layer etching or, in each case, using at least one selected from the group consisting of hydrofluoric acid, buffered hydrofluoric acid, buffered oxide etching, ammonium fluoride, phosphoric acid, hydrochloric acid, and hydrogen peroxide, or at least a combination thereof, as the etchant.

[0046] Another particularly preferred etching method is atomic layer etching. Here, atomic layer etching can be performed dry or wet.

[0047] In a preferred embodiment of the component, a first etching method uses a first etchant and another etching method uses a different etchant, wherein the first etchant is different from the other etchant. This preferred embodiment is the 14th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0048] In a preferred embodiment of the component, the first etchant is selected from the group consisting of fluorides, Ar, N, He, H, and bromides, or combinations thereof. This preferred embodiment is the 15th embodiment of the invention, which is preferably dependent on the 14th embodiment of the invention.

[0049] In a preferred embodiment of the component, the other etchant is selected from the group consisting of fluorides, chlorides, Ar, N, He, and H, or combinations thereof. This preferred embodiment is the 16th embodiment of the invention, which preferably depends on the 14th or 15th embodiment of the invention.

[0050] In a preferred embodiment of the component, inorganic material A or inorganic material B, or both, is an oxide or a nitride, or both. This preferred embodiment is the 17th embodiment of the invention, which preferably depends on either the 7th or 16th embodiment of the invention.

[0051] In this context, the oxide is preferably selected from the group consisting of silicon dioxide, aluminum oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, tantalum oxide, lanthanide oxides, and molybdenum oxide, or combinations thereof. Lanthanide oxide is preferably lanthanum oxide. Tantalum oxide is preferably tantalum pentoxide. Aluminum oxide is preferably aluminum(III). Additionally or alternatively, at least one nitride is preferably selected from the group consisting of silicon nitride, aluminum nitride, and silicon oxynitride, or combinations thereof.

[0052] In a preferred embodiment of the component, the minimum distance between dielectric layer A and dielectric layer B is less than 500 nm, preferably less than 450 nm, more preferably less than 400 nm, more preferably less than 350 nm, more preferably less than 300 nm, more preferably less than 250 nm, more preferably less than 200 nm, more preferably less than 150 nm, more preferably less than 100 nm, more preferably less than 90 nm, more preferably less than 80 nm, more preferably less than 70 nm, more preferably less than 60 nm, more preferably less than 50 nm, more preferably less than 40 nm, more preferably less than 30 nm, even more preferably less than 20 nm, and most preferably less than 10 nm. This preferred embodiment is the 18th embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0053] In a preferred embodiment of the component, dielectric layer A is adjacent to dielectric layer B. This preferred embodiment is the 19th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0054] In a preferred embodiment of the component, the first electrical conductor layer is at least partially embedded in the dielectric layer B. This preferred embodiment is the 20th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0055] In a preferred embodiment of the component, another electrical connector extends from the first surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B, and is electrically connected to the first electrical conductor layer. This preferred embodiment is the 21st embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention. In a preferred aspect of the 21st embodiment, the other electrical connector does not extend to the other side of the component.

[0056] In a preferred embodiment of the component, the layer sequence further includes another electrically conductive layer; wherein, in a view in the first direction, at least a first region of the first electrically conductive layer, at least a first region of the other electrically conductive layer, and at least a first region of the optical element layer overlap each other. This preferred embodiment is the 22nd embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0057] In a preferred embodiment of the component, another electrical conductor layer is superimposed on the optical element layer on the side of the optical element layer facing the first side of the component, or on the side of the optical element layer facing the other side of the component, or both. This preferred embodiment is the 23rd embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0058] Preferably, another electrical conductor layer is superimposed on the optical element layer on the same side as the first electrical conductor layer.

[0059] In a preferred embodiment of the component, another electrical conductor layer is disposed between the dielectric layer A and the optical element layer. This preferred embodiment is the 24th embodiment of the invention, which preferably depends on the 22nd or 23rd embodiment of the invention.

[0060] Preferably, another electrical conductor layer is disposed between the first electrical conductor layer and the optical element layer.

[0061] In a preferred embodiment of the component, another electrical conductor layer is at least partially embedded in dielectric layer B. This preferred embodiment is the 25th embodiment of the invention, which preferably depends on any of the 22nd to 24th embodiments of the invention.

[0062] In a preferred embodiment of the component, another electrical connector extends from the first surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B, and is electrically connected to another electrical conductor layer. This preferred embodiment is the 26th embodiment of the invention, which preferably depends on any of the 22nd to 25th embodiments of the invention. In a preferred aspect of the 26th embodiment, the other electrical connector does not extend to the other side of the component.

[0063] In a preferred embodiment of the component, another electrical conductor layer has a layer thickness of less than 1 µm, preferably less than 900 nm, more preferably less than 800 nm, more preferably less than 700 nm, more preferably less than 600 nm, more preferably less than 500 nm, more preferably less than 400 nm, more preferably less than 300 nm, more preferably less than 200 nm, more preferably less than 100 nm, more preferably less than 90 nm, more preferably less than 80 nm, more preferably less than 70 nm, more preferably less than 60 nm, more preferably less than 50 nm, more preferably less than 40 nm, more preferably less than 30 nm, more preferably less than 20 nm, more preferably less than 10 nm, more preferably less than 9 nm, more preferably less than 8 nm, more preferably less than 7 nm, more preferably less than 6 nm, more preferably less than 5 nm, more preferably less than 4 nm, more preferably less than 3 nm, more preferably less than 2 nm, and even more preferably less than 1 nm. This preferred embodiment is the 27th embodiment of the invention, which preferably depends on any of the 22nd to 26th embodiments of the invention.

[0064] Preferably, the lower limit of the thickness of the other electrical conductor layer is the thickness of an atomic or molecular monolayer of the material of the other electrical conductor layer. Preferably, the other electrical conductor layer is composed of the same material as the first electrical conductor layer.

[0065] In a preferred embodiment of the component, another electrical conductor layer comprises several atomic or molecular layers, wherein the number of atomic or molecular layers is at least one, preferably in the range of 1 to 10, preferably from 1 to 9, more preferably from 1 to 8, more preferably from 1 to 7, more preferably from 1 to 6, more preferably from 1 to 5, more preferably from 1 to 4, more preferably from 1 to 3, and even more preferably, the number of atomic or molecular layers is one or two, most preferably one. This preferred embodiment is the 28th embodiment of the invention, which preferably depends on any of the 22nd to 27th embodiments of the invention.

[0066] The atomic or molecular layers follow each other in the first direction. The preferred atomic layer is a carbon atom layer.

[0067] In a preferred embodiment of the component, the first electrical conductor layer is at least partially embedded in the dielectric layer B at a first distance from the optical element layer. This preferred embodiment is the 29th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0068] In a preferred embodiment of the component, another electrical conductor layer is at least partially embedded in dielectric layer B at another distance from the optical element layer;

[0069] The first distance is greater than the other distance. This preferred embodiment is the 30th embodiment of the present invention, which is preferably determined by the 29th embodiment of the present invention.

[0070] In a preferred embodiment of the component, the first distance is larger than the other distance by a value in the range of 3 nm to 30 nm, preferably from 5 nm to 25 nm, and more preferably from 10 nm to 15 nm. This preferred embodiment is the 31st embodiment of the invention, which preferably depends on the 30th embodiment of the invention.

[0071] In a preferred embodiment of the component, the first distance is in the range of 3 nm to 60 nm, preferably from 5 nm to 50 nm, and more preferably from 10 nm to 25 nm. This preferred embodiment is the 32nd embodiment of the invention, which preferably depends on any of the 29th to 31st embodiments of the invention.

[0072] In a preferred embodiment of the component, another distance is in the range of 0 nm to 30 nm, preferably from 0 nm to 25 nm, and more preferably from 0 nm to 10 nm. This preferred embodiment is the 33rd embodiment of the invention, which preferably depends on any of the 30th to 32nd embodiments of the invention.

[0073] In a preferred embodiment of the component, the optical element layer is a complete and continuous layer sequence. This preferred embodiment is the 34th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0074] In a preferred embodiment of the component, the optical element layer is at least partially embedded in the dielectric layer C; wherein the dielectric layer C is a layer of a layer sequence and follows the dielectric layer B in a first direction. This preferred embodiment is the 35th embodiment of the invention, which preferably depends on any of the 1st to 33rd embodiments of the invention.

[0075] Preferably, the dielectric layer C comprises an inorganic material C, and is preferably composed of an inorganic material C. The inorganic material C is preferably the same as the inorganic material A. Preferably, the dielectric layer C comprises at least 50 wt.% inorganic material C, more preferably at least 60 wt.%, more preferably at least 70 wt.%, more preferably at least 80 wt.%, and even more preferably at least 90 wt.%, based on the weight of the dielectric layer C in each case. Preferably, the inorganic material C is an oxide or a nitride, or both. In this context, the oxide is preferably selected from the group consisting of silicon dioxide, aluminum oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, tantalum oxide, lanthanide oxides, and molybdenum oxide, or combinations thereof. Preferably, the lanthanide oxide is lanthanum oxide. Preferably, the tantalum oxide is tantalum pentoxide. Preferably, the aluminum oxide is aluminum(III). Additionally or alternatively, at least one nitride is preferably selected from the group consisting of silicon nitride, aluminum nitride, and silicon oxynitride, or combinations thereof. The optical element layer may be adjacent to the dielectric layer C, or at least one additional layer or material may exist between the optical element layer and the dielectric layer C. Preferably, the dielectric layer C is a cladding layer of the optical element layer. This is particularly preferred if the optical element layer is a waveguide.

[0076] In a preferred embodiment of the component, the refractive index of the dielectric layer C is less than the refractive index of the optical element layer, preferably less than 0.03, more preferably less than 0.1, and most preferably less than 0.4. This preferred embodiment is the 36th embodiment of the invention, which preferably depends on the 35th embodiment of the invention.

[0077] In a preferred embodiment of the component, at least one of the following (preferably each) applies:

[0078] a] The first electrical conductor layer includes a second region that, in a view in the first direction, does not overlap with another electrical conductor layer, or with an optical element layer, or with either of them;

[0079] b] The first electrical conductor layer includes a third region that, in a view in the first direction, does not overlap with another electrical conductor layer, or with an optical element layer, or with either of them;

[0080] c] In a view in the first direction, a first region of the first electrical conductor layer overlaps with the optical element layer on the entire surface of the optical element layer on the first side of the optical element layer facing the assembly;

[0081] d] Another electrical conductor layer includes a second region that, in a view in the first direction, does not overlap with the first electrical conductor layer, or with the optical element layer, or with either of them;

[0082] [e] In a view in the first direction, a first region of another electrical conductor layer overlaps with the optical element layer on the entire surface of the optical element layer on the first side of the optical element layer facing the assembly.

[0083] This preferred embodiment is the 37th embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0084] A particularly preferred combination of the above items is a]b], a]b]c], a]d], a]c]d], and a]c]d]e]. Preferably, in each case of the first electrical conductor layer, the first region of the first electrical conductor layer is arranged between the second region and the third region. Preferably, the second region of the first electrical conductor layer is arranged at the first end of the first electrical conductor layer, and the third region of the first electrical conductor layer is arranged at the other end of the first electrical conductor layer opposite to the first end. Preferably, the second region of the other electrical conductor layer is arranged at the end of the other electrical conductor layer.

[0085] In a preferred embodiment of the component, one or both of the following apply:

[0086] a# The first electrical connector is electrically connected to the second region of the first electrical conductor layer;

[0087] b# Another electrical connector is electrically connected to a third region of the first electrical conductor layer;

[0088] In C#, another electrical connector is electrically connected to a second region of another electrical conductor layer.

[0089] This preferred embodiment is the 38th embodiment of the present invention, which is preferably based on the 37th embodiment of the present invention.

[0090] The preferred combinations for the above items are a#b# and a#c#.

[0091] In a preferred embodiment of the component, one or both of the following apply:

[0092] a~ The first electrical connector is connected to the surface of the first electrical conductor layer facing the first side of the assembly;

[0093] b~ Another electrical connector is connected to the surface of the first electrical conductor layer facing the first side of the assembly;

[0094] c~ Another electrical connector is connected to the surface of another electrical conductor layer facing the first side of the assembly;

[0095] d~ The first electrical connector extends through the first electrical conductor layer in a first direction;

[0096] e~ Another electrical connector extends through the first electrical conductor layer in the first direction;

[0097] f~ Another electrical connector extends through another electrical conductor layer in the first direction.

[0098] This preferred embodiment is the 39th embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0099] According to a~, the first electrical connector does not extend through the first electrical conductor layer. According to b~, the other electrical connector does not extend through the first electrical conductor layer. According to c~, the other electrical connector does not extend through the other electrical conductor layer. Particularly preferred combinations of the above items are a~b~, a~c~, d~e~, d~f~, a~e~, a~f~, d~b~, and d~c~.

[0100] In a preferred embodiment of the component, at least one of the following (preferably each) applies to dielectric layer A:

[0101] a} has less than 10 -5 The conductivity S / m is preferably less than 10. -8 S / m, more preferably less than 10 -11 S / m;

[0102] b) comprises at least one oxide or at least one nitride or both, preferably consisting of at least one oxide or at least one nitride or both;

[0103] c} has a layer thickness in the range of 20 nm to 1,000 nm, preferably from 100 nm to 750 nm, more preferably from 200 nm to 600 nm.

[0104] This preferred embodiment is the 40th embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0105] The particularly preferred combinations of the above items are a}, b}, c}, a}b}, a}c}, b}c}, a}b}c}. At least one oxide is preferably selected from the group consisting of silicon dioxide, aluminum oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, lanthanide oxides, and tantalum oxide, or combinations thereof. Lanthanide oxide is preferably lanthanum oxide. Tantalum oxide is preferably tantalum pentoxide. Aluminum oxide is preferably aluminum(III). Additionally or alternatively, at least one nitride is preferably selected from the group consisting of silicon nitride, aluminum nitride, and silicon oxynitride, or combinations thereof.

[0106] In a preferred embodiment of the component, at least one of the following (preferably each) applies to dielectric layer B:

[0107] a: has less than 10 -5 The conductivity S / m is preferably less than 10.-9 S / m, more preferably less than 10 -11 S / m;

[0108] b: comprising at least one oxide or at least one nitride or both, preferably consisting of at least one oxide or at least one nitride or both;

[0109] c: Having a layer thickness in the range of greater than 0 to 100 nm, preferably from 1 nm to 100 nm, more preferably from 5 nm to 50 nm, and even more preferably from 5 nm to 30 nm.

[0110] This preferred embodiment is the 41st embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0111] The particularly preferred combinations of the above items are a:, b:, c:, a:b:, a:c:, b:c:, and a:b:c:. At least one oxide is preferably selected from the group consisting of silicon dioxide, aluminum oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, lanthanide oxides, and tantalum oxide, or combinations thereof. Lanthanide oxide is preferably lanthanum oxide. Tantalum oxide is preferably tantalum pentoxide. Aluminum oxide is preferably aluminum(III). Additionally or alternatively, at least one nitride is preferably selected from the group consisting of silicon nitride, aluminum nitride, and silicon oxynitride, or combinations thereof.

[0112] In a preferred embodiment of the component, at least one of the following (preferably each) applies to the first electrical conductor layer or the other electrical conductor layer or each of both:

[0113] a> It has an electrical conductivity of at least 1 S / m, preferably at least 100 S / m, more preferably at least 1,000 S / m;

[0114] b> Includes one of the groups selected from carbon, nitrides, at least one metal, at least one metal alloy, at least one conductive oxide, at least one conductive polymer, at least one chalcogenide, or combinations thereof, preferably consisting of said one;

[0115] c> Having a length in the range of 10 µm to 1 mm, preferably from 20 µm to 500 µm, more preferably from 50 µm to 200 µm;

[0116] d> has a width in the range of 20 nm to 10 µm, preferably from 500 nm to 5 µm, more preferably from 1 µm to 3 µm;

[0117] e> having a layer thickness in the range of 0.1 nm to 40 nm, preferably from 0.1 nm to 30 nm, more preferably from 0.1 nm to 20 nm, more preferably from 0.1 nm to 10 nm, more preferably from 0.1 nm to 5 nm, and even more preferably from 0.2 nm to 0.5 nm;

[0118] f> Composed of several atomic layers in the first direction, the number of atomic layers is at least 1, preferably in the range of 1 to 10, preferably from 1 to 6, more preferably from 1 to 5, more preferably from 1 to 4, more preferably from 1 to 3, even more preferably 1 or 2, and most preferably 1.

[0119] This preferred embodiment is the 42nd embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0120] The particularly preferred combinations of the above items are a>, b>, c>, d>, e>, f>, a>b>e>, a>b>f>, a>b>, a>e>, a>f>, a>e>, b>f>, c>d>, c>d>e>, c>d>f>, a>b>c>d>e>f>. In this context, the preferred form of carbon is graphene. The preferred conductive oxide is titanate. The preferred titanate is calcium titanate. The preferred form of calcium titanate is perovskite. Preferably, the first electrical conductor layer is composed of the same material as the other electrical conductor layer.

[0121] In a preferred embodiment of the component, the first electrical conductor layer or the other electrical conductor layer, or each of both, is a graphene sheet. This preferred embodiment is the 43rd embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0122] In a preferred embodiment of the component, a first region of the first conductive layer and a first region of the other conductive layer are adapted and arranged to together act as a capacitor. This preferred embodiment is the 44th embodiment of the invention, which preferably depends on any of the 22nd to 43rd embodiments of the invention.

[0123] In a preferred embodiment of the component, a first region of the first conductor layer and a first region of the other conductor layer are adapted and arranged to have an RC time constant of less than 50 ns, preferably less than 10 ns, more preferably less than 1 ns, and even more preferably less than 0.5 ns. This preferred embodiment is the 45th embodiment of the invention, which preferably depends on any of the 22nd to 44th embodiments of the invention.

[0124] In a preferred embodiment of the component, at least one of the following (preferably each) applies to dielectric layer C:

[0125] a- has less than 10 -5 The conductivity S / m is preferably less than 10. -8 S / m, more preferably less than 10 -11 S / m;

[0126] b- includes at least one oxide or at least one nitride or both, preferably consisting of at least one oxide or at least one nitride or both;

[0127] c- has a layer thickness in the range of 1 nm to 5,000 nm, preferably from 500 nm to 4,500 nm, more preferably from 1,000 nm to 4,000 nm, even more preferably from 1,500 nm to 3,500 nm, even more preferably from 2,000 nm to 3,000 nm, and most preferably from 2,100 nm to 2,500 nm.

[0128] This preferred embodiment is the 46th embodiment of the present invention, which preferably depends on any of the 35th to 45th embodiments of the present invention.

[0129] The particularly preferred combinations of the above items are a-, b-, c-, ab-, ac-, bc-, and abc-. At least one oxide is preferably selected from the group consisting of silicon dioxide, aluminum oxide, zirconium dioxide, hafnium oxide, titanium dioxide, niobium pentoxide, lanthanide oxides, and tantalum oxide, or combinations thereof. Lanthanide oxide is preferably lanthanum oxide. Tantalum oxide is preferably tantalum pentoxide. Aluminum oxide is preferably aluminum(III). Additionally or alternatively, at least one nitride is preferably selected from the group consisting of silicon nitride, aluminum nitride, and silicon oxynitride, or combinations thereof.

[0130] In a preferred embodiment of the component, at least one of the following (preferably each) is applicable to the optical element layer:

[0131] a_ is adapted and arranged to photoelectrically interact with a first region of a first electrical conductor layer or a first region of another electrical conductor layer or both.

[0132] b_ includes the group consisting of silicon, oxygen, aluminum, iridium, tantalum, titanium, nitrogen, lithium, niobium, indium, phosphorus, gallium, arsenic, barium, chalcogenides, at least one polymer and resin, or combinations thereof;

[0133] c_ has a width in the range of 500 nm to 2,500 nm, preferably from 900 nm to 1,200 nm, more preferably from 950 nm to 1,050 nm;

[0134] d_ has a thickness in the range of 60 nm to 1,000 nm, preferably from 200 nm to 500 nm, and more preferably from 300 nm to 400 nm.

[0135] This preferred embodiment is the 47th embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0136] The particularly preferred combinations of the above items are a_, b_, c_, d_, b_d_, c_d_, b_c_d_, and a_b_c_d_. Preferred combinations of materials mentioned in b_ include titanium dioxide, aluminum nitride, tantalum pentoxide, silicon nitride, aluminum oxide, silicon oxynitride, lithium niobate, silicon dioxide, indium phosphide, gallium arsenide, indium gallium arsenide, barium titanate, and aluminum gallium arsenide. The preferred chalcogenides are dichalcogenides, more preferably transition metal dichalcogenides. In a preferred embodiment, the optical element layer has a thickness in the range of 300 nm to 500 nm, preferably from 320 nm to 420 nm, more preferably from 340 nm to 360 nm. Alternatively or additionally, the preferred optical element layer has a width in the range of 200 nm to 2,000 nm, preferably from 500 nm to 1,500 nm, more preferably from 900 nm to 1,100 nm. In this embodiment, the optical element layer particularly preferably comprises silicon nitride, more preferably is composed of silicon nitride. According to a_, the optical element layer is preferably adapted and arranged for an evanescent electromagnetic field of electromagnetic waves that propagate through the optical element layer to interact with a first region of a first electrical conductor layer or a first region of another electrical conductor layer or both.

[0137] In a preferred embodiment of the component, the optical element layer is selected from the group consisting of waveguides, gratings, prisms, lenses, and couplers, or combinations thereof. This preferred embodiment is the 48th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0138] In a preferred embodiment of the component, the waveguide is adapted and arranged to propagate electromagnetic waves having wavelengths in the range of 300 nm to 3,000 nm, preferably in the range of 800 nm to 2,100 nm, and more preferably in the range of 1,250 nm to 1,650 nm; this preferred embodiment is the 49th embodiment of the invention, which preferably depends on the 48th embodiment of the invention.

[0139] Preferred waveguides are adapted and arranged for propagating electromagnetic waves having wavelengths in at least one or all of the following ranges: 1,260 nm to 1,360 nm (also known as the original band or O-band), 1,360 nm to 1,460 nm (also known as the extended band or E-band), 1,460 nm to 1,530 nm (also known as the short band or S-band), 1,530 nm to 1,565 nm (also known as the conventional band or C-band), and 1,565 nm to 1,625 nm (also known as the long band or L-band). In aspects of the invention, waveguides adapted and arranged for propagating electromagnetic waves having wavelengths in the O-band, C-band, or both are particularly preferred.

[0140] In a preferred embodiment of the component, the first surface of the dielectric layer C faces the first side of the component, wherein the first surface of the optical element layer faces the first side of the component, and wherein, in a first direction, the first surface of the optical element layer and the first surface of the dielectric layer C have a maximum distance in the range of 0 to 50 nm, preferably from 0 to 30 nm, more preferably from 0 to 20 nm. This specifically limits the height of any step from the first surface of the dielectric layer C to the first surface of the optical element layer, and vice versa. This preferred embodiment is the 50th embodiment of the invention, which preferably depends on any of the 35th to 49th embodiments of the invention.

[0141] In a preferred embodiment of the component, the dielectric layer C and the optical element layer together form an embedded optical element layer; wherein each cross-section through the layer sequence contains a segment of the embedded optical element layer, the segment extending a length in two lateral directions from the center of the optical element layer in the cross-section, the length being twice the size of the optical element layer in the cross-section, wherein in cross-sections not through the layer sequence, the difference between the minimum and maximum thickness of the embedded optical element layer in the segment is greater than 20 nm, preferably greater than 10 nm, more preferably greater than 5 nm. This particularly limits the height of any step between the dielectric layer C and the optical element layer. This preferred embodiment is the 51st embodiment of the invention, which preferably depends on any of the 35th to 50th embodiments of the invention.

[0142] In a preferred embodiment of the component, the layer sequence further includes a substrate layer on the side of the optical element layer facing the other side of the component. This preferred embodiment is the 52nd embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0143] In a preferred embodiment of the component, at least one of the following (preferably each) is applicable to the substrate layer:

[0144] a' includes one selected from the group consisting of silicon, silicon carbide, gallium arsenide, indium phosphide, glass, and polymers, or combinations thereof, preferably consisting of said one;

[0145] b' has a length in the range of 5 mm to 1 m, preferably from 10 mm to 900 mm, more preferably from 20 mm to 800 mm, more preferably from 30 mm to 700 mm, more preferably from 50 mm to 600 mm, more preferably from 100 mm to 500 mm, more preferably from 150 mm to 400 mm, and more preferably from 200 mm to 300 mm.

[0146] c' has a width in the range of 5 mm to 1 m, preferably from 10 mm to 900 mm, more preferably from 20 mm to 800 mm, more preferably from 30 mm to 700 mm, more preferably from 50 mm to 600 mm, more preferably from 100 mm to 500 mm, more preferably from 150 mm to 400 mm, and more preferably from 200 mm to 300 mm.

[0147] d' has a layer thickness ranging from 10 µm to 1 mm, preferably from 675 µm to 800 µm.

[0148] This preferred embodiment is the 53rd embodiment of the present invention, which is preferably dependent on the 52nd embodiment of the present invention.

[0149] The preferred combinations for the above items are a', b', c', d', b'd', a'd', b'c'd', b'c', and a'b'c'd'.

[0150] In a preferred embodiment of the component, at least one of the following (preferably each) applies to the first electrical connection, the other electrical connection, or each of both:

[0151] a With at least 10 3 The conductivity in S / m is preferably at least 10. 5 S / m, more preferably at least 10 6 S / m;

[0152] b Includes one of the group consisting of at least one metal, nitrogen, carbon or a combination of at least two of them, preferably consisting of said one;

[0153] c It has a maximum diameter in the range of 20 nm to 2,000 nm, preferably from 30 nm to 1,500 nm, more preferably from 50 nm to 1,000 nm, even more preferably from 150 nm to 700 nm, and most preferably from 200 nm to 500 nm.

[0154] This preferred embodiment is the 54th embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0155] The preferred combination of the above items is a b c a b a c b c a b c The preferred metal is titanium. The preferred combination of components is TiN, TaN, and TiCN. The preferred form of carbon is graphene.

[0156] In a preferred embodiment of the component, the distance between the following along a first direction is...

[0157] - The first electrical conductor layer or another electrical conductor layer, or each of the two, with

[0158] - Optical element layer

[0159] It is at least 500 nm, preferably at least 600 nm, more preferably at least 700 nm, more preferably at least 800 nm, more preferably at least 900 nm, more preferably at least 1,100 nm, more preferably at least 1,200 nm, more preferably at least 1,300 nm, more preferably at least 1,400 nm, more preferably at least 1,500 nm, more preferably at least 1,600 nm, more preferably at least 1,700 nm, more preferably at least 1,800 nm, more preferably at least 1,900 nm, more preferably at least 2,000 nm, more preferably at least 2,100 nm, more preferably at least 2,200 nm, more preferably at least 2,300 nm, more preferably at least 2,400 nm, more preferably at least 2,500 nm, more preferably at least 2,600 nm, more preferably at least 2,700 nm, more preferably at least 2,800 nm, even more preferably at least 2,900 nm, and most preferably at least 3,000 nm. This preferred embodiment is the 55th embodiment of the present invention, which preferably depends on any of the foregoing embodiments of the present invention.

[0160] In a preferred embodiment of the component, the component is an optoelectronic component. This preferred embodiment is the 56th embodiment of the invention, which preferably depends on any of the foregoing embodiments of the invention.

[0161] In a preferred embodiment of the component, the optoelectronic component is selected from the group consisting of modulators, detectors, filters, interferometers, and calorimeters, or combinations thereof. This preferred embodiment is the 57th embodiment of the invention, which is preferably dependent on the 56th embodiment of the invention.

[0162] The preferred detector is adapted and arranged to detect one of the groups selected from viruses, antibodies, biomarkers, and biomolecules, or combinations thereof. Another preferred detector is a photodetector or a calorimeter, or both.

[0163] The 58th embodiment of the present invention is a method comprising method steps in the following order:

[0164] A. Provide a component precursor comprising a layer sequence, the layer sequence containing at least the following layers stacked one on top of the other in a given order from a first side of the component precursor to the opposite side of the component precursor:

[0165] I. Dielectric layer A,

[0166] II. Dielectric layer B, and

[0167] III. Optical element layer;

[0168] Wherein dielectric layer A is less resistant to the first etching method than dielectric layer B, and dielectric layer B is less resistant to another etching method than dielectric layer A; wherein the layer sequence further includes a first electrical conductor layer; wherein, in a view in a first direction from a first side to the other side, at least a first region of the first electrical conductor layer and at least a first region of the optical element layer overlap each other; wherein the first surface of dielectric layer A faces away from dielectric layer B; wherein a first via extends from the first surface of dielectric layer A through dielectric layer A;

[0169] B. By using another etching method, the first via extends at least into the first electrical conductor layer; and

[0170] C. Introducing a first conductive material into a first via to obtain a first electrical connector, the first electrical connector extending from the first surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B and electrically connected to a first electrical conductor layer.

[0171] Preferably, dielectric layer A has one or more of the features of dielectric layer A of the component according to any of the embodiments of the present invention. Alternatively, dielectric layer B preferably has one or more of the features of dielectric layer B of the component according to any of the embodiments of the present invention. Alternatively, optical element layer preferably has one or more of the features of optical element layer of the component according to any of the embodiments of the present invention. Alternatively, first electrical conductor layer preferably has one or more of the features of first electrical conductor layer of the component according to any of the embodiments of the present invention. Alternatively, first electrical connector preferably has one or more of the features of first electrical connector of the component according to any of the embodiments of the present invention. In method step C, the first via is preferably filled or coated with a first conductive material. Coating the first via with the first conductive material creates a liner of the first conductive material. Preferably, the first via is coated with first conductive material a and subsequently filled with first conductive material b, wherein the first conductive material a is different from the first conductive material b. Preferably, the first conductive material a and the first conductive material b are two metals. Preferably, the first conductive material a is titanium. Preferably, the first conductive material b is tungsten. In a preferred aspect of the 58th embodiment (preferably step A.), the first side or the other side of the component precursor extends to the preceding process layer. In this aspect, it is more preferable that the other side of the component precursor extends to the preceding process layer. In a preferred aspect of the 58th embodiment (preferably step C.), the first electrical connector does not extend to the other side of the component.

[0172] In a preferred embodiment of the method, the first electrical conductor layer is superimposed on the optical element layer on the side of the optical element layer facing the first side of the assembly precursor, or on the other side of the optical element layer facing the assembly precursor, or both. This preferred embodiment is the 59th embodiment of the invention, which preferably depends on the 58th embodiment of the invention.

[0173] In a preferred embodiment of the method, a first electrical conductor layer is disposed between the dielectric layer A and the optical element layer. This preferred embodiment is the 60th embodiment of the invention, which preferably depends on the 58th or 59th embodiment of the invention.

[0174] In a preferred embodiment of the method, method step A includes stacking dielectric layer A onto dielectric layer B using a dry method. This preferred embodiment is the 61st embodiment of the invention, which preferably depends on any of the 58th to 60th embodiments of the invention.

[0175] Dry methods do not involve applying a liquid precursor (containing a medium, specifically a solvent) of dielectric layer A to the substrate. Preferred dry methods are vapor deposition or atomic layer deposition. Preferred vapor deposition methods are chemical vapor deposition or physical vapor deposition.

[0176] In a preferred embodiment of the method, method step A includes forming a first via in dielectric layer A by a first etching method. This preferred embodiment is the 62nd embodiment of the invention, which preferably depends on any of the 58th to 61st embodiments of the invention.

[0177] In a preferred embodiment of the method, in step A, another via extends from the first surface of dielectric layer A through dielectric layer A. This preferred embodiment is the 63rd embodiment of the invention, which preferably depends on any of the 58th to 62nd embodiments of the invention.

[0178] In a preferred embodiment of the method, step A includes forming another via in dielectric layer A by a first etching method. This preferred embodiment is the 64th embodiment of the invention, which preferably depends on the 63rd embodiment of the invention.

[0179] In a preferred embodiment of the method, method step B further includes extending another via at least into the first electrical conductor layer by another etching method; wherein method step C further includes introducing another conductive material into the other via to obtain another electrical connection, the other electrical connection extending from the first layer surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B and electrically connected to the first electrical conductor layer. This preferred embodiment is the 65th embodiment of the invention, which preferably depends on the 63rd or 64th embodiment of the invention.

[0180] In method step C, the other through-hole is preferably filled or coated with another conductive material. Coating the other through-hole with another conductive material creates a liner of that other conductive material. Preferably, the other through-hole is coated with another conductive material a and subsequently filled with another conductive material b, wherein the other conductive material a is different from the other conductive material b. Preferably, the other conductive material a and the other conductive material b are two metals. Preferably, the other conductive material a is titanium. Preferably, the other conductive material b is tungsten.

[0181] In a preferred embodiment of the method, the method includes an additional method step of forming another via by a first etching method, the other via extending from a first layer surface of dielectric layer A through dielectric layer A. This preferred embodiment is the 66th embodiment of the invention, which preferably depends on any of the 58th to 62nd embodiments of the invention.

[0182] In a preferred embodiment of the method, another method step is performed between method steps B and C, or after method step C. This preferred embodiment is the 67th embodiment of the invention, which preferably depends on the 66th embodiment of the invention.

[0183] In a preferred embodiment of the method, the method further includes method steps in the following order:

[0184] A) By using another etching method, another via extends at least into the first electrical conductor layer; and

[0185] B) Introduce another conductive material into another via to obtain another electrical connection, the other electrical connection extending from the first layer surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B and electrically connected to the first electrical conductor layer.

[0186] This preferred embodiment is the 68th embodiment of the present invention, which is preferably determined by any one of the 63rd, 64th, 66th or 67th embodiments of the present invention.

[0187] In step B), the other through-hole is preferably filled or coated with another conductive material. Coating the other through-hole with another conductive material creates a liner of that other conductive material. Preferably, the other through-hole is coated with another conductive material a and subsequently filled with another conductive material b, wherein the other conductive material a is different from the other conductive material b. Preferably, the other conductive material a and the other conductive material b are two metals. Preferably, the other conductive material a is titanium. Preferably, the other conductive material b is tungsten.

[0188] In a preferred embodiment of the method, the first etching method includes the following steps:

[0189] A] A photoresist layer is superimposed on dielectric layer A on the side of dielectric layer A opposite to dielectric layer B;

[0190] B] Partially irradiate the photoresist layer in at least one region of the photoresist layer;

[0191] C] Removing at least one region or at least another region of the photoresist layer, thereby obtaining a first auxiliary via in the photoresist layer, another auxiliary via in the photoresist layer, or both; and

[0192] D] The first etchant is introduced into the first auxiliary via or another auxiliary via or both, and the first via is formed in dielectric layer A or the other via or both are formed in dielectric layer A.

[0193] This preferred embodiment is the 69th embodiment of the present invention, which preferably depends on any of the 58th to 68th embodiments of the present invention.

[0194] In a preferred embodiment of the method, the first etching method further includes the following steps:

[0195] E] Remove the photoresist layer.

[0196] This preferred embodiment is the 70th embodiment of the present invention, which is preferably based on the 69th embodiment of the present invention.

[0197] In a preferred embodiment of the method, in step A, the layer sequence further includes another electrically conductive layer, wherein, in a view in the first direction, at least a first region of the first electrically conductive layer, at least a first region of the other electrically conductive layer, and at least a first region of the optical element layer overlap each other. This preferred embodiment is the 71st embodiment of the invention, which preferably depends on any of the 58th to 70th embodiments of the invention.

[0198] Preferably, another electrical conductor layer is superimposed on the optical element layer on the first side of the optical element layer facing the assembly precursor, or on the other side of the optical element layer facing the assembly precursor, or both. Particularly preferably, the other electrical conductor layer is disposed between the dielectric layer A and the optical element layer, and more preferably between the first electrical conductor layer and the optical element layer.

[0199] In a preferred embodiment of the method, method step B further comprises extending the other via at least into the other electrical conductor layer by another etching method; wherein method step C further comprises introducing another conductive material into the other via to obtain another electrical connection, the other electrical connection extending from the first surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B and electrically connected to the other electrical conductor layer. This preferred embodiment is the 72nd embodiment of the invention, which preferably depends on the 71st embodiment of the invention.

[0200] In method step C, the other through-hole is preferably filled or coated with another conductive material. Coating the other through-hole with another conductive material creates a liner of that other conductive material. Preferably, the other through-hole is coated with another conductive material a and subsequently filled with another conductive material b, wherein the other conductive material a is different from the other conductive material b. Preferably, the other conductive material a and the other conductive material b are two metals. Preferably, the other conductive material a is titanium. Preferably, the other conductive material b is tungsten.

[0201] In a preferred embodiment of the method, the method further includes method steps in the following order:

[0202] A) By using another etching method, the other via extends at least into another electrical conductor layer; and

[0203] B) Introduce another conductive material into another via to obtain another electrical connection, which extends from the first layer surface of dielectric layer A through dielectric layer A and at least partially through dielectric layer B and is electrically connected to another electrical conductor layer.

[0204] This preferred embodiment is the 73rd embodiment of the present invention, which is preferably dependent on the 71st embodiment of the present invention.

[0205] In step B), the other through-hole is preferably filled or coated with another conductive material. Coating the other through-hole with another conductive material creates a liner of that other conductive material. Preferably, the other through-hole is coated with another conductive material a and subsequently filled with another conductive material b, wherein the other conductive material a is different from the other conductive material b. Preferably, the other conductive material a and the other conductive material b are two metals. Preferably, the other conductive material a is titanium. Preferably, the other conductive material b is tungsten.

[0206] In a preferred embodiment of the method, method step A) or method steps A) and B) are performed between method steps B and C or after method step C.

[0207] This preferred embodiment is the 74th embodiment of the present invention, which preferably depends on any of the 68th to 73rd embodiments of the present invention.

[0208] In a preferred embodiment of the method, one or both of the following apply:

[0209] a~ The first electrical connector is electrically connected to the first electrical conductor layer because the first electrical connector contacts the surface of the first electrical conductor layer facing the first side of the assembly precursor;

[0210] b~ Another electrical connector is electrically connected to the first electrical conductor layer because the other electrical connector contacts the surface of the first electrical conductor layer facing the first side of the assembly precursor;

[0211] c~ Another electrical connector is electrically connected to another electrical conductor layer because the other electrical connector contacts the surface of the other electrical conductor layer facing the first side of the component precursor;

[0212] Before the first conductive material is introduced into the first via, the first via extends through the first electrical conductor layer in the first direction, and the first electrical connector is electrically connected to the first electrical conductor layer because the first electrical connector extends through the first electrical conductor layer in the first direction.

[0213] e~ Before another conductive material is introduced into another via, the other via extends through the first electrical conductor layer in the first direction, and the other electrical connector is electrically connected to the first electrical conductor layer because the other electrical connector extends through the first electrical conductor layer in the first direction;

[0214] f~ Before another conductive material is introduced into another via, the other via extends through another electrical conductor layer in a first direction, and the other electrical connector is electrically connected to the other electrical conductor layer because the other electrical connector extends through the other electrical conductor layer in the first direction.

[0215] This preferred embodiment is the 75th embodiment of the present invention, which preferably depends on any of the 58th to 74th embodiments of the present invention.

[0216] The preferred combinations of the above items are a~b~, a~c~, d~e~ and d~f~.

[0217] In a preferred embodiment of the method, in step A, the optical element layer is a complete and continuous layer sequence. This preferred embodiment is the 76th embodiment of the invention, which preferably depends on any of the 58th to 75th embodiments of the invention.

[0218] In a preferred embodiment of the method, in step A, the optical element layer is at least partially embedded in the dielectric layer C; wherein the dielectric layer C is a layer of a layer sequence and follows the dielectric layer B in a first direction. This preferred embodiment is the 77th embodiment of the invention, which preferably depends on any of the 58th to 75th embodiments of the invention.

[0219] In a preferred embodiment of the method, in step A, the layer sequence further includes a substrate layer on the side of the optical element layer facing the component precursor. This preferred embodiment is the 78th embodiment of the invention, which preferably depends on any of the 58th to 77th embodiments of the invention.

[0220] Preferably, the substrate layer has one or more of the features of the substrate layer of any of the components according to any of the embodiments of the present invention.

[0221] In a preferred embodiment of the method, after step C, the method further includes the step of separating a region of the layer sequence from the component precursor to obtain the component, wherein the region comprises at least a segment of the optical element layer. This preferred embodiment is the 79th embodiment of the invention, which preferably depends on any of the 58th to 78th embodiments of the invention.

[0222] In a preferred embodiment of the method, the first via or the other via, or both, has a maximum diameter in the range of 20 nm to 2,000 nm, preferably from 30 nm to 1,500 nm, more preferably from 50 nm to 1,000 nm, even more preferably from 150 nm to 700 nm, and most preferably from 200 nm to 500 nm. This preferred embodiment is the 80th embodiment of the invention, which preferably depends on any of the 58th to 79th embodiments of the invention.

[0223] In a preferred embodiment of the method, the component precursor is an optoelectronic component precursor. This preferred embodiment is the 81st embodiment of the invention, which preferably depends on any of the 58th to 80th embodiments of the invention.

[0224] In a preferred embodiment of the method, the method is used to produce a component from a component precursor. This preferred embodiment is the 82nd embodiment of the invention, which preferably depends on any of the 58th to 81st embodiments of the invention.

[0225] In this context, preferred components are those of any of the embodiments of the present invention.

[0226] In a preferred embodiment of the method, the component is an optoelectronic component. This preferred embodiment is the 83rd embodiment of the invention, which is preferably dependent on the 82nd embodiment of the invention.

[0227] The 84th embodiment of the present invention is a component that can be obtained by any of the methods described in the 58th to 83rd embodiments of the present invention.

[0228] The 85th embodiment of the present invention is an electronic device comprising components of any one of the embodiments 1 to 57 or 84 according to the present invention.

[0229] In a preferred embodiment of the electronic device, the electronic device is a computing device or a memory, or both. This preferred embodiment is the 86th embodiment of the invention, which is preferably dependent on the 85th embodiment of the invention.

[0230] The computing device can be any type of computing device used for any kind of purpose. Preferred computing devices are those selected from the group consisting of CPU (Central Processing Unit), GPU (Graphics Processing Unit), XPU (X Processing Unit), and ASIC (Application-Specific Integrated Circuit), or combinations thereof.

[0231] In a preferred embodiment of the electronic device, the components are designed and arranged to be selected from one of the following groups:

[0232] a. Providing communication between a first integrated circuit in an electronic device and another integrated circuit in the electronic device;

[0233] b. Providing communication between a first part of an integrated circuit and another part of an integrated circuit in an electronic device; and

[0234] c. Injecting optical vectors into the optical network and / or reading optical vectors from the optical network; or

[0235] d.. A combination of at least two of them.

[0236] This preferred embodiment is the 87th embodiment of the present invention, which is preferably dependent on the 85th or 86th embodiment of the present invention.

[0237] Here, communication refers to the exchange of data (preferably binary data). In a preferred embodiment according to alternative a.. above, the component is part of a first integrated circuit or another integrated circuit. In another preferred embodiment according to alternative a.. above, the component is not part of a first integrated circuit or another integrated circuit. In a preferred embodiment according to alternative b.. above, the component is part of an integrated circuit. In a preferred embodiment according to alternative c.. above, the component is part of an optical network. The preferred optical network is designed to perform optical computation. A preferred optical network designed to perform optical computation is an optical neuromorphic network or a fast Fourier accelerator, or both.

[0238] The 88th embodiment of the present invention is a component of any one of the embodiments 1 to 57 or 84 of the present invention for use in the manufacture of an electronic device.

[0239] The 89th embodiment of the present invention is a component according to any one of the 1st to 57th or 84th embodiments of the present invention for use in the following purposes:

[0240] a_ Establishes communication between the first integrated circuit and another integrated circuit;

[0241] b_ Establishes communication between the first part of the integrated circuit and another part of the integrated circuit; or

[0242] c_ Injects optical vectors into the optical network and / or reads out optical vectors from the optical network.

[0243] Here, communication refers to the exchange of data (preferably binary data). In a preferred embodiment according to alternative a_ above, the component is part of a first integrated circuit or another integrated circuit. In another preferred embodiment according to alternative a_ above, the component is not part of a first integrated circuit or another integrated circuit. In a preferred embodiment according to alternative b_ above, the component is part of an integrated circuit. In a preferred embodiment according to alternative c_ above, the component is part of an optical network. The preferred optical network is designed to perform optical computation. The preferred optical network designed to perform optical computation is an optical neuromorphic network or a fast Fourier accelerator or both.

[0244] In embodiments 90 to 111 of the present invention, the optoelectronic component should preferably be understood as an optoelectronic component according to the present invention, such as an optoelectronic component of any of embodiments 56 and 57 of the present invention.

[0245] The 90th embodiment of the present invention is a first assembly 2000, which includes:

[0246] a. First subassembly 2001, wherein the first subassembly 2001 includes:

[0247] i. First component 2002, wherein the first component 2002

[0248] A. is a component according to the invention, preferably a component of any of the first to 57 or 84 embodiments according to the invention.

[0249] B. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0250] ii. Second component 2003, wherein the second component 2003

[0251] A. is a component according to the invention, preferably a component of any of the first to 57 or 84 embodiments according to the invention.

[0252] B. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0253] iii. A first integrated circuit 2004, which is in electrical contact with a first component 2002 and preferably with a second component 2003;

[0254] iv. Preferably, the first data storage component 2005 is adapted and arranged to make electrical contact with the first integrated circuit 2004;

[0255] b. Another subassembly 2007, wherein the other subassembly 2007 includes:

[0256] i. Another component 2008, in which another component 2008

[0257] A. is a component according to the invention, preferably a component of any of the first to 57 or 84 embodiments according to the invention.

[0258] B. Preferably, it is adapted and arranged for optical connection with the first component 2002.

[0259] C. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0260] ii. Another component 2009, of which another component 2009

[0261] A. is a component according to the invention, preferably a component of any of the first to 57 or 84 embodiments according to the invention.

[0262] B. Preferably, it is adapted and arranged for optical connection with the second component 2003.

[0263] C. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0264] iii. Another integrated circuit 2010, which is in electrical contact with another component 2008 and preferably with yet another component 2009;

[0265] iv. Preferably, another data storage component 2011 is adapted and arranged to make electrical contact with another integrated circuit 2010;

[0266] c. First light-emitting component 2006, wherein

[0267] i. Preferably, the first component 2002 and the first light-emitting component 2006 are adjusted and arranged to be optically connected to each other.

[0268] ii. Preferably, the first light-emitting component 2006 is arranged in the first sub-assembly 2001;

[0269] d. Preferably, another light-emitting component 2012, wherein

[0270] i. Preferably, another component 2009 and another light-emitting component 2012 are adjusted and arranged to be optically connected to each other.

[0271] ii. Preferably, another light-emitting component 2012 is arranged in another sub-assembly 2007;

[0272] in

[0273] The first subassembly 2001 and the other subassembly 2007 are adapted and arranged to transmit data between the subassemblies via optical signals.

[0274] In a preferred aspect of the 90th embodiment of the invention, the first sub-assembly and the other sub-assembly are adapted and arranged to transmit data between the sub-assemblies via optical signals within a distance of at least 1 mm, more preferably at least 2 mm, even more preferably at least 5 mm, and further preferably at least 10 mm. In a preferred aspect of the 90th embodiment of the invention, the first sub-assembly and the other sub-assembly are adapted and arranged to transmit data between the sub-assemblies via optical signals within a distance of at least 10 cm, more preferably at least 30 cm, and further preferably at least 50 cm. In a preferred aspect of the 90th embodiment of the invention, the first component is a modulator and the second component is a photodetector. In a preferred aspect of the 90th embodiment of the invention, another component is a photodetector and yet another component is a modulator.

[0275] In a preferred embodiment of the first assembly, the first assembly is selected from the group consisting of: assemblies adapted and arranged for communication, assemblies adapted and arranged for telecommunications, assemblies adapted and arranged for high-performance computing, assemblies adapted and arranged for artificial intelligence (e.g., machine learning), assemblies adapted and arranged for data centers, switches (e.g., network switches), optical interconnects, and chips. This preferred embodiment is the 91st embodiment of the invention, which is preferably dependent on the 90th embodiment of the invention.

[0276] The 92nd embodiment of the present invention is an optical data communication module 3100, which includes:

[0277] a. First component 3101, wherein the first component 3101

[0278] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0279] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0280] b. Preferably, the light-emitting component 3102 is adapted and arranged to be optically connected to the first component 3101;

[0281] c. Preferably, another component 3103, wherein the other component 3103

[0282] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0283] ii. Preferably, it is optically connected to the first component 3101.

[0284] iii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0285] d. Integrated circuit 3104, which is in electrical contact with the first component 3101 and preferably in electrical contact with another component 3103.

[0286] In a preferred aspect of the 92nd embodiment, the first component is a modulator and the other component is a photodetector. In another preferred aspect of the 92nd embodiment, the other component is a modulator and the first component is a photodetector.

[0287] The 93rd embodiment of the present invention is an optical sensing module 2100, which includes:

[0288] a. First component 2101, wherein the first component 2101

[0289] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0290] ii. Preferably, the first electromagnetic wave is modulated and arranged to be directed toward the target region 2102.

[0291] iii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0292] b. A sensing element 2103, adapted and arranged to detect another electromagnetic wave from the target area 2102, thereby generating an electrical signal, wherein the sensing element preferably includes another component, wherein the other component

[0293] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0294] ii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0295] c. Preferably, the optical element 2104 is adapted and arranged to focus another electromagnetic wave onto the sensing element 2103; and

[0296] d. Preferably, integrated circuit 2105, wherein integrated circuit

[0297] i. Preferably in electrical contact with the first component 2101,

[0298] ii. Preferably, it is in electrical contact with the sensing component 2103.

[0299] iii. Preferably, it is adapted and arranged to process the electrical signals generated by the sensing element 2103;

[0300] e. Preferably, the light-emitting component 2106 is optically connected to the first component 2101.

[0301] The 94th embodiment of the present invention is a device 2200 adapted and arranged for medical applications, comprising:

[0302] a. First component 2201, wherein the first component 2201

[0303] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0304] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0305] b. Preferably, another component 2202, wherein the other component 2202

[0306] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0307] ii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0308] c. Preferably, the first light-emitting component 2203 is optically connected to the first component 2201;

[0309] d. A first integrated circuit 2204, which is in electrical contact with a first component 2201 and preferably in electrical contact with another component 2202;

[0310] e. Preferably, sensing unit 2205, wherein sensing unit 2205 is adapted and arranged to measure at least one physical property of a body (preferably a mammalian body), wherein sensing unit 2205

[0311] i. Preferably, it includes an optical data communication module according to the 92nd embodiment of the present invention.

[0312] ii. Preferably, it includes an optical sensing module according to the 93rd embodiment of the present invention.

[0313] iii. Preferably, it communicates with at least one or all of the following data, and more preferably, it is optically connected:

[0314] A. First component 2201,

[0315] B. Another component 2202.

[0316] In a preferred aspect of the 94th embodiment, the first component is a modulator and the other component is a photodetector. In another preferred aspect of the 94th embodiment, the other component is a modulator and the first component is a photodetector.

[0317] The 95th embodiment of the present invention is a vehicle 2300 adapted and arranged for flight, wherein the vehicle 2300 includes:

[0318] a. First component 2301, wherein the first component 2301

[0319] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0320] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0321] b. Preferably, the first light-emitting component 2302 is adapted and arranged to be optically connected to the first component 2301;

[0322] c. Preferably, another component 2303, wherein the other component 2303

[0323] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0324] ii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0325] d. Preferably, the first integrated circuit 2304 is in electrical contact with the first component 2301 and preferably in electrical contact with another component 2303;

[0326] e. Preferably, the propulsion component 2305;

[0327] f. Preferably, the component 2306 is used to generate lift;

[0328] g. Preferably, the control system 2307 is adapted and arranged to control the movement of the vehicle;

[0329] h. Preferably, the sensing unit 2308, wherein the sensing unit 2308

[0330] i. Preferably, the information is adapted and arranged to provide information about the surrounding environment of the vehicle 2300 (e.g., the target area), more preferably spatial information about the surrounding environment of the vehicle 2300.

[0331] ii. Preferably, it includes an optical data communication module according to the 92nd embodiment of the present invention.

[0332] iii. Preferably, it includes an optical sensing module according to the 93rd embodiment of the present invention.

[0333] iv. Preferably, it communicates with at least one or all of the following data, and more preferably, it is optically connected:

[0334] A. First component 2301, and

[0335] B. Another component, 2303.

[0336] In a preferred aspect of the 95th embodiment, the first component is a modulator and the other component is a photodetector. In another preferred aspect of the 95th embodiment, the other component is a modulator and the first component is a photodetector. In a preferred aspect of the 95th embodiment, the first component and the other component are optically connected.

[0337] In a preferred embodiment of the vehicle adapted and arranged for flight, the vehicle is selected from the group consisting of aircraft, helicopters, drones, rockets, satellites, balloons (e.g., weather balloons, hot air balloons), and missiles. This preferred embodiment is the 96th embodiment of the invention, which preferably depends on the 95th embodiment of the invention.

[0338] The 97th embodiment of the present invention is a robot system 2400, which includes:

[0339] a. First component 2401, wherein the first component 2401

[0340] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0341] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0342] b. Preferably, the light-emitting component 2402 is optically connected to the first component 2401;

[0343] c. Preferably, another component 2403, wherein the other component 2403

[0344] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0345] ii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0346] d. Preferably, the first integrated circuit 2404 is in electrical contact with the first component 2401 and preferably with another component 2403;

[0347] e. Robot body 2405, which is adapted and arranged for movement, wherein robot body 2405 preferably includes a first component 2401 and / or another component 2403;

[0348] f. Sensing unit 2406, wherein sensing unit 2406

[0349] i. Preferably, the arrangement is adapted and configured to provide spatial information about the surrounding environment (e.g., the target area) of the robot body 2405.

[0350] ii. Preferably, it includes an optical data communication module according to the 92nd embodiment of the present invention.

[0351] iii. Preferably, it includes an optical sensing module according to the 93rd embodiment of the present invention.

[0352] iv. Preferably, it communicates with at least one or all of the following: first component 2401, and another component 2403;

[0353] g. A control module 2407, adapted and arranged to preferably control the movement of the robot body 2405 based on spatial information provided by the sensing unit 2406, wherein the control module 2407 preferably communicates with at least one or all of the following data and more preferably is optically connected:

[0354] i. Component 2401,

[0355] ii. Another component, 2403,

[0356] iii. First integrated circuit 2404;

[0357] h. Preferably, the external entity 2408 communicates data with the robot body 2405.

[0358] In a preferred aspect of the 97th embodiment, the first component is a modulator and the other component is a photodetector. In another preferred aspect of the 97th embodiment, the other component is a modulator and the first component is a photodetector. In a preferred aspect of the 97th embodiment, the first component and the other component are optically connected.

[0359] The 98th embodiment of the present invention is a second assembly 2500, which includes:

[0360] a. One or more memory cells 2501, preferably one or more optical memory cells, adapted and arranged to store instructions and / or data;

[0361] b. One or more processors 2502, preferably one or more optical processors, adapted and arranged to...

[0362] i. Communicating data with one or more memory units 2501, and preferably optically connected,

[0363] ii. Execute instructions stored in one or more memory units 2501 and / or perform operations using optical signals;

[0364] c. Preferably, the data communication module 2503, more preferably, is an optical data communication module according to the 92nd embodiment of the present invention, wherein the data communication module 2503 is adapted and arranged for data (more preferably optical data) communication between at least one or all of the following:

[0365] i. At least one of one or more memory units 2501 and at least one of one or more processors 2502,

[0366] ii. At least two of the memory cells 2501,

[0367] iii. At least two of processors 2502;

[0368] d. At least one component 2504, wherein at least one component 2504

[0369] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0370] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator and / or a photodetector.

[0371] iii. Preferably arranged in at least one or all of the following: at least one memory unit 2501, at least one processor 2502, and a data communication module 2503.

[0372] In a preferred aspect of the 98th embodiment, the second assembly includes at least two components, more preferably at least two optoelectronic devices. In this aspect, it is preferred that the at least two optoelectronic devices are at least one modulator and at least one photodetector.

[0373] The 99th embodiment of the present invention is a third assembly 2600, which includes:

[0374] a. Homomorphic operation module 2601, adapted and arranged to perform homomorphic operations on encrypted optical data to obtain modified encrypted optical data;

[0375] b. Preferably, the photonic encryption module 2602, wherein the photonic encryption module 2602

[0376] i. Optical connection with homomorphic operation module 2601,

[0377] ii. Adapted and arranged for preferably using an optical coding scheme to encrypt optical data to obtain encrypted optical data;

[0378] c. Preferably, the photon decryption module 2603, wherein the photon decryption module

[0379] i. Optically connected to the homomorphic operation module 2601, the photonic encryption module 2602, or both.

[0380] ii. Adapted and arranged for decryption of modified encrypted optical data, preferably using an optical decoding scheme;

[0381] d. At least one component 2604, wherein at least one component 2604

[0382] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0383] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator and / or a photodetector.

[0384] iii. Preferably arranged in at least one or all of the following: homomorphic operation module 2601, photon encryption module 2602, and photon decryption module 2603;

[0385] e. Preferably, at least one light-emitting element 2606 is optically connected to at least one or all of the following;

[0386] i. Homomorphic operation module 2601,

[0387] ii. Photon encryption module 2602,

[0388] iii. Photon decryption module 2603.

[0389] In a preferred aspect of the 99th embodiment, the third assembly includes at least two components, more preferably at least two optoelectronic devices. In this aspect, it is preferred that the at least two optoelectronic devices are at least one modulator and at least one photodetector.

[0390] The 100th embodiment of the present invention is an optical connection module 2700, which includes:

[0391] a. First component 2701, wherein the first component 2701

[0392] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0393] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0394] b. Preferably, another component 2702, wherein the other component 2702

[0395] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0396] ii. Preferably, it is optically connected to the first component 2701.

[0397] iii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0398] c. Preferably, at least one waveguide 2703 is optically connected to the first component 2701, another component 2702, or both;

[0399] d. Preferably, the light-emitting component 2704 is optically connected to the first component 2701;

[0400] e. Preferably, at least one integrated circuit 2705 is in electrical contact with a first component 2701, another component 2702, or both.

[0401] In a preferred aspect of the 100th embodiment, the first component is a modulator and the other component is a photodetector. In another preferred aspect of the 100th embodiment, the other component is a modulator and the first component is a photodetector.

[0402] In a preferred embodiment of the optical connection module, the optical connection module is selected from the group consisting of optical interconnects, optical transmitters, optical receivers, optical transceivers, and optical switches. This preferred embodiment is the 101st embodiment of the present invention, which preferably depends on the 100th embodiment of the present invention.

[0403] The 102nd embodiment of the present invention is a first transport component 2800, which is preferably adapted and arranged for autonomous driving, comprising:

[0404] a. First component 2801, wherein the first component 2801

[0405] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0406] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0407] b. Preferably, the first light-emitting component 2812 is adapted and arranged to be optically connected to the first component 2801;

[0408] c. Preferably, another component 2802, wherein the other component 2802

[0409] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0410] ii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0411] d. Preferably, the first integrated circuit 2811 is in electrical contact with the first component 2801, another component 2802, or both;

[0412] e. Sensing unit 2803, wherein sensing unit 2803

[0413] i. Preferably, the arrangement is adapted and configured to provide spatial information about the surrounding environment (e.g., target area) of the first transport component 2800.

[0414] ii. Preferably, it includes a data communication module, more preferably an optical data communication module according to the 92nd embodiment of the present invention.

[0415] iii. Preferably, it includes an optical sensing module according to the 93rd embodiment of the present invention.

[0416] iv. Preferably, it communicates with at least one or all of the following data, and more preferably, it is optically connected:

[0417] A. First component 2801, and

[0418] B. Another component, 2802;

[0419] f. Processing module 2804, its

[0420] i. Includes a sensing submodule 2805, which is adapted and arranged to analyze and / or process spatial information from sensing unit 2803 to provide sensing data about the presence and / or classification of patterns and / or items in the target area.

[0421] ii. Includes a generation submodule 2806, which is adapted and arranged to process sensed data and preferably generate suggestions, control commands, or both.

[0422] iii. Preferably, it communicates with at least one or all of the following data, and more preferably, it is optically connected:

[0423] A. First component 2801, and

[0424] B. Another component, 2802;

[0425] g. Preferably, the human-machine interface 2807 is adapted and arranged to provide feedback to the user based on suggestions, control commands, or both;

[0426] h. Preferably, the control unit 2808 is adapted and arranged to execute recommendations, control commands, or both;

[0427] i. Steering member 2809, which is adapted and arranged to steer the first transport member 2800, wherein the control unit 2808 is preferably adapted and arranged to control the steering member;

[0428] j. A propulsion component 2810, which is adapted and arranged to provide propulsion to the first transport component 2800, wherein the control unit 2808 is preferably adapted and arranged to control the propulsion component 2810.

[0429] In a preferred aspect of the 102nd embodiment, the first component is a modulator and the other component is a photodetector. In another preferred aspect of the 102nd embodiment, the other component is a modulator and the first component is a photodetector. In a preferred aspect of the 102nd embodiment, the first component and the other component are optically connected.

[0430] The 103rd embodiment of the present invention is another transport component 2900, which includes:

[0431] a. First component 2901, wherein the first component 2901

[0432] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0433] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator;

[0434] b. Preferably, another component 2902, wherein the other component 2902

[0435] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0436] ii. Preferably, it is optically connected to the first component 2901.

[0437] iii. More preferably, it is an optoelectronic component, and even more preferably, a photodetector;

[0438] c. Steering component 2903, which is adapted and arranged to steer another transport component 2900;

[0439] d. Propulsion component 2904, which is adapted and arranged to provide propulsion to another transport component 2900.

[0440] In a preferred aspect of the 103rd embodiment, the first component is a modulator and the other component is a photodetector. In another preferred aspect of the 103rd embodiment, the other component is a modulator and the first component is a photodetector.

[0441] The 104th embodiment of the present invention is a fourth assembly 3000, which includes:

[0442] a. One or more memory units 3001, adapted and arranged to store instructions and / or data;

[0443] b. One or more processors 3002, which are adapted and arranged to

[0444] i. To communicate data with one or more memory units 3001,

[0445] ii. Execute instructions stored in one or more memory units 3001 and / or perform operations;

[0446] c. At least one component 3003, wherein at least one component 3003

[0447] i. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0448] ii. More preferably, it is an optoelectronic component, and even more preferably, a modulator and / or a photodetector;

[0449] The fourth component is preferably adapted and arranged for use in at least one or all of the following: artificial intelligence, machine learning, graphics rendering, large-scale visualization, games, high-frequency trading, video streaming, audio recognition, image recognition, object recognition, virtual reality, molecular simulation, scientific simulation (e.g., modeling of weather patterns and / or climate, modeling of star formation), equation solving, data mining, and cloud-based applications.

[0450] In a preferred aspect of the 104th embodiment, the fourth assembly includes at least two components, more preferably at least two optoelectronic devices. In this aspect, it is preferred that the at least two optoelectronic devices are at least one modulator and at least one photodetector.

[0451] The 105th embodiment of the present invention is a first assembly according to the present invention (preferably according to the 90th embodiment of the present invention) for use in at least one or all of the following: communications, telecommunications, high-performance computing, for use in data centers, switches (e.g., network switches), optical interconnects, and chips.

[0452] The 106th embodiment of the present invention is the use of the first assembly according to the present invention (preferably according to the 90th embodiment of the present invention) in at least one or all of the following: artificial intelligence applications and / or machine learning applications, devices adapted and arranged for medical applications, vehicles adapted and arranged for flight, robotic systems, assemblies adapted and arranged for optical computing, homomorphic computing modules, photonic encryption modules, photonic decryption modules, optical connection modules, and transport components.

[0453] The 107th embodiment of the present invention is a fourth assembly according to the present invention (preferably according to the 104th embodiment) for use in at least one or all of the following: artificial intelligence, machine learning, graphics rendering, large-scale visualization, games, high-frequency trading, video streaming, audio recognition, image recognition, object recognition, virtual reality, molecular simulation, scientific simulation (e.g., modeling of weather patterns and / or climate, modeling of star formation), equation solving, data mining, and cloud-based applications.

[0454] The 108th embodiment of the present invention describes the use of the component for at least one or all of the following:

[0455] a. Communication, preferably in an assembly adapted and arranged for communication;

[0456] b. Telecommunications, preferably in an assembly adapted and arranged for telecommunications purposes;

[0457] c. High-performance computing, preferably in an assembly adapted and arranged for high-performance computing;

[0458] d. Data center;

[0459] e. Switch;

[0460] f. Optical interconnects;

[0461] g. Computer chip;

[0462] h. A vehicle adapted and arranged for flight;

[0463] i. Equipment adapted and arranged for medical applications;

[0464] j. Modules adapted and arranged for optical sensing;

[0465] k. Modules adapted and arranged for optical data communication;

[0466] l. Robotic systems;

[0467] m. Optical computing, preferably an assembly adapted and arranged for optical computing;

[0468] n. At least one or all of the following: homomorphic operation module, photonic encryption module, and photonic decryption module;

[0469] o. Optical connection module;

[0470] p. Transport components;

[0471] q. Assemblies adapted and arranged for use in artificial intelligence and / or machine learning;

[0472] Among the components

[0473] I. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0474] II. More preferably, it is an optoelectronic component, and even more preferably, it is a modulator and / or a photodetector.

[0475] In an aspect of the 108th embodiment of the invention, all feasible combinations of features a. to q. are preferred aspects of the invention.

[0476] The 109th embodiment of the present invention describes the use of the component for at least one or all of the following:

[0477] a. Equipment adapted and deployed for consumer applications;

[0478] b. Equipment adapted and set up for laser and / or optical detection and ranging;

[0479] c. Equipment adapted and set up for spectroscopy;

[0480] d. Systems adapted and deployed for high-performance computing, preferably for memory-intensive applications, big data, or search engines;

[0481] e. Equipment adapted and set up for virtual reality, augmented reality, and gaming;

[0482] f. Equipment adapted and deployed for streaming and / or video broadcasting;

[0483] g. Systems adapted and deployed for trading, brokerage, and / or financing;

[0484] h. A system adapted and deployed for wireless communication;

[0485] i. Equipment adapted and deployed for biometric search, personal data management, or patient data management;

[0486] j. Equipment adapted and deployed for climate prediction, weather forecasting, and / or scientific simulation (e.g., modeling of star formation);

[0487] k. Equipment adapted and deployed for molecular simulation, drug discovery, and / or gene sequencing; and

[0488] l. Equipment adapted and deployed for the enterprise cloud;

[0489] Among the components

[0490] I. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0491] II. More preferably, it is an optoelectronic component, and even more preferably, it is a modulator and / or a photodetector.

[0492] In an aspect of the 109th embodiment of the invention, all feasible combinations of features a. to l. are preferred aspects of the invention.

[0493] The 110th embodiment of the present invention is an article comprising components, wherein the article is selected from the group consisting of:

[0494] a. Assemblies adapted and arranged for communication;

[0495] b. Assemblies adapted and arranged for telecommunications use;

[0496] c. Assemblies adapted and arranged for high-performance computing;

[0497] d. Data center;

[0498] e. Switch;

[0499] f. Optical interconnects;

[0500] g. Computer chip;

[0501] h. A vehicle adapted and arranged for flight;

[0502] i. Equipment adapted and arranged for medical applications;

[0503] j. Modules adapted and arranged for optical sensing;

[0504] k. Modules adapted and arranged for optical data communication;

[0505] l. Robotic systems;

[0506] m. Assemblies adapted and arranged for optical calculations;

[0507] n. At least one or all of the following: homomorphic operation module, photonic encryption module, and photonic decryption module;

[0508] o. Optical connection module;

[0509] p. Transport components;

[0510] q. Assemblies adapted and arranged for use in artificial intelligence and / or machine learning;

[0511] Among the components

[0512] I. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0513] II. More preferably, it is an optoelectronic component, and even more preferably, it is a modulator and / or a photodetector.

[0514] In an aspect of the 110th embodiment of the invention, all feasible combinations of features a. to q. are preferred aspects of the invention.

[0515] The 111th embodiment of the present invention is an article comprising components, wherein the article is selected from the group consisting of:

[0516] a. Equipment adapted and deployed for consumer applications;

[0517] b. Equipment adapted and set up for laser and / or optical detection and ranging;

[0518] c. Equipment adapted and set up for spectroscopy;

[0519] d. Systems adapted and deployed for high-performance computing, preferably for memory-intensive applications, big data, or search engines;

[0520] e. Equipment adapted and set up for virtual reality, augmented reality, and gaming;

[0521] f. Equipment adapted and deployed for streaming and / or video broadcasting;

[0522] g. Systems adapted and deployed for trading, brokerage, and / or financing;

[0523] h. A system adapted and deployed for wireless communication;

[0524] i. Equipment adapted and deployed for biometric search, personal data management, or patient data management;

[0525] j. Equipment adapted and deployed for climate prediction, weather forecasting, and / or scientific simulation (e.g., modeling of star formation);

[0526] k. Equipment adapted and deployed for molecular simulation, drug discovery, and / or gene sequencing; and

[0527] l. Equipment adapted and deployed for the enterprise cloud;

[0528] Among the components

[0529] I. is a component according to the invention, preferably a component of any of the embodiments 1 to 57 or 84 according to the invention.

[0530] II. More preferably, it is an optoelectronic component, and even more preferably, it is a modulator and / or a photodetector.

[0531] In an aspect of the 111th embodiment of the invention, all feasible combinations of features a. to l. are preferred aspects of the invention.

[0532] The 112th embodiment of the present invention is a fifth assembly comprising a component of any one of the embodiments of the first to the 57th or the 84th embodiment of the present invention, more preferably an optoelectronic component, and even more preferably a modulator and / or a photodetector, wherein the fifth assembly further comprises a front-end process layer, and wherein the component is adapted and arranged such that a first side of the component or another side of the component faces the front-end process layer.

[0533] In a preferred aspect of the 112th embodiment, the other side of the component extends to the previous process layer. In a preferred aspect of the 112th embodiment, the first electrical connector does not extend to the other side of the component. In a preferred aspect of the 112th embodiment, the other electrical connector does not extend to the other side of the component.

[0534] In one or more preferred aspects of the invention, if at least one or all of the following include an integrated circuit and a component according to the invention, then the component is preferably adapted and arranged such that the other side of the component faces the integrated circuit: a first assembly, a first sub-assembly, another sub-assembly, a second assembly adapted and arranged for optical computing, a third assembly, a fourth assembly, a fifth assembly, an optical sensing module, a device adapted and arranged for medical applications, a vehicle adapted and arranged for flight, a robotic system, an optical connection module, a first transport component, another transport component, and an optical data communication module. In this / these aspects, it is preferred that the first electrical connection of the component does not extend to the other side of the component. In this / these aspects, it is preferred that the other electrical connection of the component does not extend to the other side of the component.

[0535] Features described as preferred in one category of the invention (e.g., according to a complex) are similarly preferred in embodiments of other categories of the invention (e.g., methods and uses). Throughout this document, the disclosure of a range should preferably be understood to include both endpoints of the range. Furthermore, each disclosure of a range in this document should preferably also be understood to disclose a preferred sub-range that does not include one endpoint or does not include both endpoints. For example, the disclosure of a range from 200 nm to 800 nm should be understood to disclose a range that includes both endpoints 200 nm and 800 nm. Furthermore, it should also be understood to disclose a range that includes endpoint 200 nm but not endpoint 800 nm, a range that does not include endpoint 200 nm but includes endpoint 800 nm, and a range that does not include both endpoints 200 nm and 800 nm.

[0536] Layer sequence

[0537] The layers of the layer sequence are joined together planarly, preferably over their entire surface. Two layers are joined together when their adhesion exceeds van der Waals attraction. Due to its specific properties, the latter definition does not apply to graphene layers. Preferably, the layers joined together are selected from one of the groups formed by coating. Layers joined together by coating are preferably joined together by vapor deposition, atomic layer deposition, or both. Preferred forms of vapor deposition coating are physical vapor deposition (PVD) or chemical vapor deposition (CVD). Preferred forms of CVD are plasma-enhanced chemical vapor deposition (PECVD). Unless otherwise stated, in a layer sequence, layers may follow each other indirectly (i.e., with one or at least two intermediate layers) or directly (i.e., without intermediate layers). This is especially true in textual forms where one layer is superimposed on another. Wherein a textual form of a layer sequence includes an enumeration of layers, it means that at least one specified layer is present in the specified sequence. Such textual form does not necessarily mean that these layers follow each other directly. In a preferred embodiment, the superimposed layers are adjacent to each other. The literal form of two layers adjacent to each other means that the two layers follow each other directly and therefore have no intermediate layer. Generally, each layer in a layer sequence can be a complete and continuous layer of the layer sequence, or a partial or discontinuous layer. A complete layer of the layer sequence extends laterally over the entire area of ​​the layer sequence, as opposed to a partial layer having a width or length less than the entire layer sequence, or both. Continuous layers have no gaps except for gaps (especially vias) for electrical connections. In contrast, discontinuous layers can exist over the entire area of ​​the layer sequence, however, with gaps that are not filled with electrical connections. Specifically, discontinuous layers can exist in a patterned or structured form. Preferably, one of the group consisting of dielectric layer A, dielectric layer B, dielectric layer C, and substrate layer, or at least a combination thereof (particularly preferably each of these), is a complete and continuous layer of the layer sequence. Alternatively or additionally, it is preferred that the first electrical conductor layer or another electrical conductor layer, or each of both, is a partial layer. In a preferred embodiment, the optical element layer is a complete and continuous layer of the layer sequence. In another embodiment, the optical element layer is a partial layer, which is preferably at least partially embedded in the dielectric layer C. Preferably, one of the group consisting of dielectric layer A, dielectric layer B, dielectric layer C, optical element layer, first electrical conductor layer, another electrical conductor layer and substrate layer, or at least a combination thereof (particularly preferably each of the foregoing) is a planar parallel layer. Preferably, at least two of the group consisting of dielectric layer A, dielectric layer B, dielectric layer C, optical element layer, first electrical conductor layer, another electrical conductor layer and substrate layer (preferably each combination of the foregoing) are planar parallel to each other.

[0538] First direction

[0539] The first direction points from one side of the component or component precursor to the other. The first direction is the direction in which the layers of the layer sequence follow each other. The first direction is preferably perpendicular to the layer plane of dielectric layer A, or the layer plane of dielectric layer B, or each of the two. The first direction of the component precursor is the same as the first direction of the component produced from this component precursor.

[0540] dielectric layer

[0541] Dielectric layers A, B, and C are chosen from any materials and layers that a person skilled in the art would consider suitable in the context of this invention. Each dielectric layer comprises a dielectric, preferably composed of a dielectric. Each dielectric layer comprises a dielectric in a proportion of at least 50 wt.% of the dielectric, more preferably at least 60 wt.% of the dielectric, more preferably at least 70 wt.% of the dielectric, even more preferably at least 80 wt.% of the dielectric, and still more preferably at least 90 wt.% of the dielectric, based on the weight of the respective dielectric layer in each case. Thus, each dielectric layer is an electrically insulator that can be polarized by an applied electric field. Dielectric layer A is composed of a different material than dielectric layer B. Preferably, dielectric layers A and C are composed of the same material. One of the groups consisting of dielectric layers A, B, and C, or at least a combination thereof, can preferably be obtained by vapor deposition (preferably by PVD or CVD, or both). One of the groups consisting of dielectric layers A, B, and C, or at least a combination thereof, is preferably not a polymer layer. The dielectric layer selected from the group consisting of dielectric layer A, dielectric layer B, and dielectric layer C, or at least a combination thereof, preferably has a total polymer content of less than 50 wt.%, more preferably less than 40 wt.%, more preferably less than 30 wt.%, more preferably less than 20 wt.%, more preferably less than 10 wt.%, even more preferably less than 5 wt.%, and most preferably 0 wt.%, based on the weight of the respective dielectric layer in each case. The dielectric layer selected from the group consisting of dielectric layer A, dielectric layer B, and dielectric layer C, or at least a combination thereof, is preferably not an organic layer. The layer selected from the group consisting of dielectric layer A, dielectric layer B, and dielectric layer C, or at least a combination thereof, preferably has a total proportion of less than 50 wt.-%, more preferably less than 40 wt.-%, more preferably less than 30 wt.-%, more preferably less than 20 wt.-%, more preferably less than 10 wt.-%, even more preferably less than 5 wt.-%, and most preferably 0 wt.-%, based on the weight of the respective dielectric layer in each case. The layer selected from the group consisting of dielectric layer A, dielectric layer B, and dielectric layer C, or at least a combination thereof, is preferably an inorganic layer. The layer selected from the group consisting of dielectric layer A, dielectric layer B, and dielectric layer C, or at least a combination thereof, preferably comprises one or more inorganic materials in a total proportion of at least 50 wt.-%, more preferably at least 60 wt.-%, more preferably at least 70 wt.-%, more preferably at least 80 wt.-%, even more preferably at least 90 wt.-%, based on the weight of the respective dielectric layer in each case. Preferably, one of the dielectric layers selected from the group consisting of dielectric layer A, dielectric layer B, and dielectric layer C, or at least a combination thereof, is composed of one or more (preferably one) inorganic materials. Preferably, dielectric layer A is a hard mask. Alternatively or alternatively, dielectric layer B is preferably a hard mask. Preferably, dielectric layer A is qualified as a hard mask for another etching method.Preferably, dielectric layer A is a hard mask for another etching method. Alternatively, preferably, dielectric layer B is qualified as a hard mask for the first etching method. Preferably, dielectric layer B is a hard mask for the first etching method.

[0542] Optical element layer

[0543] The optical element layer considers each optical element in a layered form that is suitable for use in the context of this invention, as deemed appropriate by those skilled in the art. The optical element layer is preferably adapted and arranged for photoelectric interaction with a first electrical conductor layer or another electrical conductor layer, or both. This means:

[0544] - The current or charge in the first electrical conductor layer or another electrical conductor layer, or both, can modify electromagnetic waves propagating in or in contact with the optical element layer, or

[0545] - Electromagnetic waves in or in contact with the optical element layer (especially those propagating through the optical element layer) can modify the current or charge in the first electrical conductor layer or another electrical conductor layer or both.

[0546] - Both.

[0547] In this document, optical elements are elements arranged and designed to manipulate electromagnetic waves. Preferably, the optical element layer is selected from the group consisting of transmissive optics, conversion optics, and reflective optics, or combinations of at least two of these. Transmissive optics are optical devices through which electromagnetic waves pass to manipulate them. Preferably, transmissive optics are selected from the group consisting of waveguides, lenses, and transmission gratings, or combinations of at least two of these. Waveguides are particularly preferred here. Conversion optics are optical devices arranged and configured to change the wavelength of electromagnetic radiation. For example, this can be used to adjust the color of light. Reflective optics are optical devices that reflect electromagnetic waves to manipulate them (particularly the direction of propagation). Preferably, reflective optics are mirrors or reflection gratings.

[0548] waveguide

[0549] A waveguide is an element that manipulates the propagation direction of electromagnetic waves to guide them and thereby reduces energy loss (compared to reducing intensity according to the inverse square law, which applies to extending electromagnetic waves into three-dimensional space) by confining energy transmission in one direction. Preferred waveguides are selected from the group consisting of strip waveguides, ridge waveguides, slot waveguides, buried waveguides, and diffused waveguides, or combinations thereof. Alternatively or additionally, preferred waveguides include at least one or all of the following: silicon, oxygen, aluminum, iridium, tantalum, titanium, nitrogen, lithium, niobium, indium, phosphorus, gallium, arsenic, barium, chalcogenides, at least one polymer, resin, or combinations thereof. Examples of combinations of the foregoing materials include titanium dioxide, aluminum nitride, tantalum pentoxide, silicon nitride, aluminum oxide, silicon oxynitride, lithium niobate, silicon dioxide, indium phosphide, gallium arsenide, indium gallium arsenide, barium titanate, and aluminum gallium arsenide. Preferred chalcogenides are dichalcogenides, more preferably transition metal dichalcogenides. Preferred waveguides are adapted and arranged for propagating electromagnetic waves, more preferably electromagnetic waves having wavelengths in the range of 1000 nm to 2700 nm, even more preferably from 1100 nm to 2600 nm, and even more preferably from 1200 nm to 2500 nm. Alternatively or additionally, waveguides are preferably adapted and arranged for propagating electromagnetic waves having wavelengths in at least one or all of the following ranges: 1260 nm to 1360 nm (also known as the original band or O-band), 1360 nm to 1460 nm (also known as the extended band or E-band), 1460 nm to 1530 nm (also known as the short band or S-band), 1530 nm to 1565 nm (also known as the conventional band or C-band), and 1565 nm to 1625 nm (also known as the long band or L-band). In aspects of the invention, waveguides adapted and arranged for propagating electromagnetic waves having wavelengths in the O-band, C-band, or both are particularly preferred. When a waveguide is disclosed as being adapted and arranged to propagate electromagnetic waves with wavelengths within a given wavelength range, this should not be construed as meaning that the waveguide is necessarily adapted only to propagate electromagnetic waves within that given wavelength range. Rather, it should preferably be understood as meaning that the waveguide is adapted and arranged at least to propagate electromagnetic waves within a given wavelength range.

[0550] Alternatively or alternatively, a preferred component of the present invention includes a cladding layer for a waveguide. Preferably, the cladding layer at least partially surrounds the waveguide. Preferably, the cladding layer surrounds the waveguide along its entire length, but at least a portion of the waveguide's circumference; preferably, the cladding layer surrounds more than 50% of the waveguide's circumference. Alternatively or alternatively, the cladding layer surrounds the circumference of the waveguide, except for the first side of the waveguide facing the component or component precursor. The cladding layer has a refractive index less than that of the waveguide. Preferably, the dielectric layer C is the cladding layer. In this context, the waveguide is preferably at least partially embedded in the dielectric layer C.

[0551] Electrical conductor layer

[0552] The first and second electrical conductor layers are each in a layered form, as deemed suitable by those skilled in the art in the context of this invention. Thus, each electrical conductor is a conductive layer. Preferably, the first and second electrical conductor layers are composed of the same material. Alternatively or additionally, it is preferred that the first and second electrical conductor layers have the same layer thickness. Alternatively or additionally, it is preferred that the first and second electrical conductor layers are planar parallel to each other. Preferably, the electrical conductor layer is composed of graphene. This preference applies to each individual electrical conductor layer taught herein, and also to each combination of electrical conductor layers taught herein. Graphene is an allotrope of carbon consisting of at least one layer of carbon atoms arranged in a hexagonal lattice structure. Therefore, the preferred electrical conductor layer composed of graphene may consist of a single layer of carbon atoms or multiple layers of carbon atoms stacked on top of each other without forming graphite. The presence of graphene is determined by Raman spectroscopy as described below in the “Composition” test method.

[0553] Electrical connectors

[0554] Each of the first and second electrical connectors is preferably a conductive path obtained by filling a cavity (preferably a through-hole) with a conductive material or by coating the walls of the cavity with a conductive material, or both. Preferably, the length of each of the first electrical connector or the second electrical connector, or both, is at least partially (preferably entirely) substantially parallel to a first direction. The preferred electrical connector is referred to as a via in the technical field of this invention. A via is a through-hole extending through two or more adjacent layers of a layer sequence, wherein the through-hole is at least partially filled with a conductive material (preferably a metal) or at least partially coated with a conductive material (preferably a metal), or both, establishing an electrical connection through two or more adjacent layers. The preferred electrical connector is circular in cross-section.

[0555] substrate

[0556] The substrate layer for the component and its precursor is considered to be suitable for each substrate as deemed appropriate by those skilled in the art. Preferred substrate layers are selected from the group consisting of glass plates, polymer plates, polymer sheets, and wafers.

[0557] Optoelectronic components

[0558] The components of this invention are preferably optoelectronic components, more preferably graphene-based optoelectronic components. Optoelectronic components are electronic components designed and tuned to modify electromagnetic waves by means of current or charge, or for modifying current or charge by means of electromagnetic waves. An example of modification of electromagnetic waves is modulation of electromagnetic waves. Modification of electromagnetic waves should preferably be understood as modification of one or more properties of the electromagnetic wave. Examples of properties include amplitude, phase, frequency, and polarization. In aspects of this invention, amplitude is preferably modified. Examples of modification of at least one property of the electromagnetic wave are modulation of the electromagnetic wave, at least partial absorption of the electromagnetic wave, or both. Preferred modulation of the electromagnetic wave is modulation of the amplitude of the electromagnetic wave.

[0559] Examples of preferred optoelectronic components include modulators, photodetectors (also spelled as photodetectors), and interferometers. More preferred examples are modulators and photodetectors. A preferred modulator at least partially converts an electrical signal into an optical signal. A preferred photodetector at least partially converts an optical signal into an electrical signal.

[0560] The modulator preferably modifies the electromagnetic wave by modulating the electromagnetic wave, more preferably by modulating the amplitude of the electromagnetic wave. It is even more preferred that the modulator modulates the electromagnetic wave for data transmission by applying a signal to the electromagnetic wave. The photodetector preferably modifies the electromagnetic wave by at least partially absorbing the electromagnetic wave. At least partial absorption of the electromagnetic wave preferably results in a reduction in the amplitude of the electromagnetic wave. It is preferred that the photodetector at least partially absorbs the electromagnetic wave for data reception. For example, if the modulator and photodetector are optically connected, then the modulator transmits data and the photodetector receives data, for example, data is transmitted between the modulator and the photodetector.

[0561] The optoelectronic component preferably has a height of at least 10 nm, more preferably at least 100 nm, and even more preferably at least 200 nm. For example, the optoelectronic component may have a height in the range of 300 nm to 400 nm. Preferably, the optoelectronic component has a height equal to or less than 50 μm, more preferably equal to or less than 20 μm, and more preferably equal to or less than 10 μm.

[0562] Preferred optoelectronic components include at least one graphene layer. Optoelectronic components including graphene (e.g., modulators and photodetectors) are well known to those skilled in the art.

[0563] hard mask

[0564] A hard mask is a material layer in semiconductor processing, generally referred to as an etching mask, used in place of polymer or other organic soft resist materials, i.e., in place of photoresist. Typically, in the prior art, hard masks are only used when the material to be etched is itself an organic polymer. In this case, the hard mask is usually removed after it has been used as an etching mask.

[0565] Photolithography

[0566] Photolithography is the most common method used in semiconductor manufacturing for integrated circuits. In integrated circuit manufacturing, photolithography is a general term for etching techniques involving the creation of an etch mask by light on a layer of material to be etched. Typically, ultraviolet light is used to transfer the geometric design from the optical mask to a photosensitive chemical coating (i.e., to a photoresist layer) applied to the layer of material to be etched. The photoresist decomposes or hardens when exposed to light. The etch mask is then created by removing the softer portions of the coating with a suitable solvent (also called a developer in this case). Thus, a photoresist (also called a resist) is a photosensitive material that can be used to form a patterned coating on a surface. Photoresists typically consist of a resin, a sensitizer, and a medium or solvent. The resin acts as a binder, providing physical properties such as adhesion and chemical resistance. The sensitizer is a photoactive compound that makes the photoresist photosensitive. The medium or solvent keeps the resist liquid.

[0567] Etching and Etching Agent

[0568] The etchant in an etching method is an atom, radical, molecule, or ion that interacts directly with the material surface to remove portions of the material through chemical or physical interactions, or both. The preferred chemical interaction is a chemical reaction. The preferred physical interaction is sputtering. If the etchant is referred to herein by the symbol of a chemical element, then the reference covers atoms, radicals, molecules, and ions of that element.

[0569] Wet etching is an etching method in which the etchant is provided in liquid form or as part of a liquid composition containing the etchant. The liquid etchant or liquid composition containing the etchant is applied to the target surface by (preferably) spin coating. Dry etching is an etching method in which the etchant is provided in gas or plasma form or as part of a gas or plasma. In each case, the gas or plasma may be generated by a liquid.

[0570] overlapping

[0571] If regions of two or more layers follow each other consistently in a certain direction, then these regions overlap each other in the view in that direction.

[0572] Partial embedding

[0573] A layer that is at least partially embedded in another layer is a partial layer of a layer sequence. A layer that is at least partially embedded in another layer is preferably surrounded by that other layer along its entire length. Alternatively, preferably more than 50% of the perimeter of the layer is surrounded by the other layer. Preferably, the other layer surrounds the perimeter of the layer except for the side of the layer facing the first side of the component or component precursor. Preferably, the layer and the other layer together form a composite layer, wherein the surface of the composite layer facing the first side of the component or component precursor is a combination of the surfaces of the layer and the other layer, each of which faces the first side.

[0574] distance

[0575] The distance between two elements is the length of the shortest straight line connecting the two elements.

[0576] Methods and Steps

[0577] The method steps according to the invention are performed in the order of their symbols. In principle, method steps with directly consecutive symbols can be performed successively, simultaneously, or overlapping in time. If multiple operations are performed in the same method step, these operations can be performed in any order, simultaneously, or overlapping in time, unless otherwise given or technically required.

[0578] Chemical elements

[0579] Unless otherwise stated, wherever abbreviations for chemical elements are used herein, this includes reference to the atoms, molecules, and ions of that element itself, as well as the presence of atoms or ions of that element in a compound.

[0580] electrical components

[0581] An electrical component may include one or more other electrical components. These other electrical components may in turn include one or more other electrical components. For example, a sensor may include a chip, which in turn includes transistors.

[0582] Examples of electrical components include: semiconductor components (e.g., transistors, graphene-based field-effect transistors, radio frequency graphene-based field-effect transistors); optoelectronic components (e.g., modulators, photodetectors, broadband photodetectors, single-photon photodetectors); heating devices (e.g., graphene heaters); measuring devices (e.g., devices including Hall bars); sensors (e.g., pressure sensors, gas sensors, magnetic sensors, ion sensors); accelerometers; detectors adapted and arranged for detecting viruses, antibodies, biomarkers, biomolecules, and / or combinations of at least two of them; quantum dots; microwave circuits; antennas (e.g., THz antennas); chips; dies; light-emitting components (e.g., lasers); and combinations of at least two of them.

[0583] Optical connection

[0584] The two components of an optical connection should preferably be understood to mean that the two components are adapted and arranged for the propagation (e.g., transmission) of electromagnetic waves between the two components. Here, the two components may be, for example, a light-emitting element and a photoelectric component, two components, or two photoelectric components (e.g., a modulator and a photodetector). The two photoelectric components of the optical connection are preferably adapted and arranged for data communication (e.g., transmission) between the two photoelectric components. The modulator adapted and arranged to be optically connected to the photodetector is preferably adapted and arranged to transmit data between the modulator and the photodetector via optical signals, more preferably to transmit data from the modulator to the photodetector via optical signals.

[0585] The two components of an optical connection do not need to be in the same assembly, the same subassembly, the same device, or the same system, but can be in different assemblies, different subassemblies, different devices, or different systems.

[0586] electric contact

[0587] The two components of an electrical contact should preferably be understood to mean that current can flow between the two components. Here, the two components may be, for example, integrated circuits and electrical components, integrated circuits and optoelectronic components, or integrated circuits and sensing components. The electrical contact is preferably adapted and arranged for at least one or all of the following: data communication, providing power to components.

[0588] integrated circuit

[0589] Examples of preferred integrated circuits include the following: processing units, memory units, application-specific integrated circuits (ASICs), microcontrollers, field-programmable gate arrays (FPGAs), and single-chip systems.

[0590] The processing unit is preferably adapted and arranged to execute the instructions of a computer program. Examples of these instructions include arithmetic, logic, control, and input / output operations. The memory unit is preferably adapted and arranged to store the instructions of the computer program.

[0591] Examples of processing units include Central Processing Units (CPU), Graphics Processing Units (GPUs), X Processing Units (XPUs), Tensor Processing Units (TPUs), and Neuromorphic Processing Units (NPUs). Examples of memory units include Random Access Memory (RAM), Static RAM (SRAM), Synchronous Dynamic RAM (SDRAM), Double Data Rate SDRAM (DDR SDRAM), Graphics DDR SDRAM (GDDR SDRAM), Flash Memory, Magnetoresistive RAM (MRAM), Magnetic Tunnel Junction MRAM, and Spin-Orbit Torque MRAM.

[0592] Examples of data storage components are hard disk drives and flash drives.

[0593] Data communication

[0594] The two components of data communication should preferably be understood to mean that data can be transmitted between the two components. Here, the two components may be, for example, two components, two optoelectronic components, an integrated circuit and an optoelectronic component, a sensing element and an optoelectronic component, or an integrated circuit and a sensing element. Data can be transmitted using electrical signals, optical signals, or both. A data packet transmitted between the first component and the other component includes at least one or all of the following: A.] transmission (e.g., transmission) of data from the first component to the other component; B.] transmission (e.g., transmission) of data from the other component to the first component; A.] and B.] both. For example, the first and other components are a modulator and a photodetector, respectively.

[0595] Integrated circuits that are in electrical contact with electrical components preferably communicate data with the electrical components. Integrated circuits that are in electrical contact with optoelectronic components preferably communicate data with the optoelectronic components. Integrated circuits that are in electrical contact with data storage components preferably communicate data with the data storage components. Integrated circuits that are in electrical contact with sensing components preferably communicate data with the sensing components.

[0596] Light-emitting components

[0597] The light-emitting component is adapted and arranged to emit electromagnetic waves. For example, the light-emitting component is adapted and arranged to emit radio waves, microwaves, or light waves. Preferably, the light-emitting component is adapted and arranged to facilitate at least one or more of the following: communication, sensing, and imaging. An example of a light-emitting component is a laser.

[0598] Optics and Photonics

[0599] As used herein, the terms "optical" and "light" should preferably be understood as electromagnetic radiation, more preferably electromagnetic radiation within any of the visible, infrared, and ultraviolet spectral ranges. Examples of optical signals are signals and / or data transmitted using electromagnetic waves. Optical data should preferably be understood as data transmitted using electromagnetic waves.

[0600] Photonics should preferably be understood to include at least one or all of the following: generation, detection, manipulation, emission, transmission, modulation, signal processing, switching, amplification and sensing of electromagnetic waves.

[0601] Artificial intelligence and machine learning

[0602] Artificial intelligence (AI) should preferably be understood as including at least one or all of the following: perceiving, synthesizing, inferring, predicting, and / or generating information using computerized tools and / or techniques (e.g., machine learning models). Machine learning includes supervised learning (e.g., linear regression, decision trees, support vector machines), unsupervised learning (e.g., hierarchical clustering, k-means clustering), and reinforcement learning. Machine learning also includes deep learning, such as convolutional neural networks and recurrent neural networks.

[0603] Sensing components

[0604] The sensing element is preferably adapted and arranged to sense (e.g., measure) at least one or all of the following: sound waves, electromagnetic waves, electrical signals, movement, temperature, velocity, acceleration, and rotation. For example, movement, velocity, acceleration, and / or rotation may pertain to a mammalian body, a vehicle, a robot body, or a transport component. It is particularly preferred that the sensing element is adapted and arranged to at least partially absorb electromagnetic waves. The sensing element is preferably adapted and arranged to generate electrical signals, optical signals, or both, wherein the generated signal is preferably based on an input received by the sensing element. Examples of this input include the measurement and / or at least partial absorption of electromagnetic waves.

[0605] The sensing component may include at least one or all of the following: photodetector, photodiode, phototransistor, image sensor, fiber optic sensor, laser diode, optical biosensor, optical position sensor, optical touch sensor, photomultiplier tube, avalanche photodiode, charge-coupled device, complementary metal-oxide-semiconductor sensor, thermal infrared detector, photon counting detector, and superconducting nanowire single-photon detector.

[0606] Sensing unit

[0607] The sensing unit includes sensing components. The sensing unit preferably includes an integrated circuit.

[0608] The sensing unit is preferably adapted and arranged to analyze and / or process data of a target area obtained by the sensing unit, wherein the data may be images, sound, temperature measurements and / or other sensor readings. The output of the sensing unit is preferably structured data, representing the interpretation and / or analysis of data obtained by the sensing unit (e.g., patient health, object detection and identification, scene information, location and mapping data (preferably including road geometry and / or landmarks), feature extraction results (including edges, corners, textures, shapes and / or key points) and / or pattern recognition output).

[0609] Spatial information should preferably be understood as information about the space in which entities, such as vehicles, robot bodies, and / or transport components, are located. Spatial information may include information about the presence of objects near the entity (e.g., the distance between the entity and objects), the entity's velocity, the entity's acceleration, and / or the entity's rotation.

[0610] Data communication module

[0611] The data communication module is preferably adapted and arranged to transmit data between one or more components (e.g., electrical components). Here, electrical components may be, for example: one or more chips; one or more dies; one or more integrated circuits located, for example, in a robot body, robot system, or assembly; sensing components and integrated circuits; sensing units and control systems.

[0612] First assembly

[0613] In a preferred aspect of the first assembly, the first sub-assembly and the other sub-assembly are portions of the same chip. In another preferred aspect of the first assembly, the first sub-assembly and the other sub-assembly are portions of different chips. In this aspect, the different chips may have different functions. For example, the first chip may be a processing unit, and the other chip may be a memory unit (e.g., random access memory). In one preferred aspect of the first assembly, the first sub-assembly and the other sub-assembly are portions of the same computing component (e.g., a computer). In another preferred aspect of the first assembly, the first sub-assembly and the other sub-assembly are portions of different computing components (e.g., different computers). For example, the first and other sub-assemblies are portions of different computers in a computer cluster.

[0614] In a preferred aspect of the first assembly, the first sub-assembly and the other sub-assembly are adapted and arranged to transmit data between the sub-assemblies via optical signals over a distance of at least X mm and / or at least Y cm. This should not be construed as meaning that the sub-assemblies cannot transmit data at distances less than X mm and / or Y cm. Rather, it should preferably be understood as meaning that the sub-assemblies can transmit data over distances ranging from 0 mm to at least X mm and / or at least Y cm, and preferably over distances greater than X mm and / or greater than Y cm.

[0615] An assembly adapted and arranged for communication should preferably be understood as an assembly adapted and arranged to transmit data over a distance of less than 10 km. An assembly adapted and arranged for communication may use at least one optoelectronic component, preferably at least one modulator and / or at least one photodetector to transmit data. Alternatively, an assembly adapted and arranged for communication may use at least one other communication component and at least one optoelectronic component, preferably at least one modulator and / or at least one photodetector to transmit data. Examples of other communication components include antennas, optical cables (e.g., optical fibers), and wired connections.

[0616] An assembly adapted and arranged for telecommunications purposes should preferably be understood as an assembly adapted and arranged to transmit data over a distance of at least 10 km. An assembly adapted and arranged for telecommunications purposes may use at least one optoelectronic component, preferably at least one modulator and / or at least one photodetector to transmit data. Alternatively, an assembly adapted and arranged for telecommunications purposes may use at least one other communication component and at least one optoelectronic component, preferably at least one modulator and / or at least one photodetector to transmit data. Examples of other communication components include antennas, optical cables (e.g., optical fibers), and wired connections.

[0617] The assembly adapted and deployed for high-performance computing preferably includes at least one supercomputer and / or at least one computer cluster. A supercomputer should preferably be understood as capable of performing at least 10 [unclear] operations per second. 14 A computer capable of sub-floating-point operations. The assemblies for high-performance computing are preferably adapted and arranged for parallel computing.

[0618] The assemblies adapted and arranged for use in data centers are preferably adapted and arranged to store data and more preferably to transmit data.

[0619] The assembly adapted and arranged for artificial intelligence is preferably an assembly that can be used to obtain artificial intelligence models, and more preferably to obtain machine learning models using, for example, supervised learning, semi-supervised learning and unsupervised learning.

[0620] The switch is preferably adapted and positioned for, for example, optically connecting two networks and / or optically connecting computing components (e.g., computers) and networks.

[0621] Optical interconnects are preferably adapted and arranged for optically connecting at least one or all of the following: at least two integrated circuits, at least two computer chips. Here, the at least two integrated circuits and / or at least two computer chips may be part of a system-in-package or chiplet. Here, the at least two integrated circuits may be part of the same chip.

[0622] The first assembly according to the invention allows for increased data transmission rate, improved signal-to-noise ratio, reduced crosstalk, and reduced energy consumption. The first assembly also allows for data transmission over increased distances, while simultaneously enabling at least one of the following: reduced energy consumption, increased data transmission rate, and improved signal-to-noise ratio.

[0623] Optical data communication module

[0624] An optical data communication module should preferably be understood as a data communication module that transmits data via optical signals. The optical data communication module is preferably adapted and arranged to transmit data via optical signals using at least one optoelectronic component. The optical data communication module is preferably adapted and arranged to transmit data via optical signals using a modulator. The optical data communication module is preferably adapted and arranged to receive data via optical signals using a photodetector.

[0625] The optical data communication module is preferably adapted and arranged to transmit data between one or more components (e.g., electrical components). Here, electrical components may be, for example: one or more chips; one or more dies; one or more integrated circuits located, for example, in a robot body, robot system, or assembly; sensing components and integrated circuits; sensing units and control systems.

[0626] An optical data communication module may include at least one or all of the following: optical fiber, optical interconnects.

[0627] The optical data communication module according to the present invention allows for increased bandwidth, reduced energy consumption, and reduced error rate in the transmitted data.

[0628] Electromagnetic waves from the target area

[0629] Another electromagnetic wave detected from the target area by the sensing element and / or sensing unit includes electromagnetic waves reflected by an object in the target area and / or electromagnetic waves emitted by an object in the target area.

[0630] Optical sensing module

[0631] The optical sensing module may include at least one or all of the following: photodetector, photodiode, phototransistor, image sensor, fiber optic sensor, laser diode, optical biosensor, optical position sensor, optical touch sensor, photomultiplier tube, avalanche photodiode, charge-coupled device, complementary metal-oxide-semiconductor sensor, thermal infrared detector, photon counting detector, and superconducting nanowire single-photon detector.

[0632] Examples of optical devices include lenses, prisms, and diffraction gratings.

[0633] An example of an optical sensing module is disclosed in WO2023076132 A1.

[0634] The optical sensing module according to the present invention allows for improved sensing capabilities and performance. Specifically, the optical sensing module according to the present invention allows for enhanced sensitivity, improved signal-to-noise ratio, reduced crosstalk, and reduced power consumption, thereby enabling improved performance and versatility in a variety of sensing applications.

[0635] Equipment adapted and deployed for medical applications

[0636] The medical application is preferably understood to include at least one or all of the following: monitoring a patient's health; diagnosing a patient's pathological condition; maintaining a patient's health status; sending and / or receiving data from another device, preferably another device adapted and positioned for the medical application; and controlling another device, preferably another device adapted and positioned for the medical application. Here, the patient is preferably a mammal, and more preferably a human. The device may be implanted in the patient (for internal use) and / or may be used externally.

[0637] Examples of physical properties of the body include (e.g., blood, tissue) oxygen concentration, body temperature, heart rate, and blood glucose level. Examples of sensing components adapted and arranged to measure at least one physical property of the body include blood glucose monitors, heart rate monitors, thermometers, and pulse oximeters.

[0638] The device is preferably adapted and arranged to transmit data via optical signals using at least one optoelectronic component, preferably at least one modulator and / or at least one photodetector. The device preferably includes one or more integrated circuits, more preferably one or more integrated circuits adapted and arranged to control at least one optoelectronic component.

[0639] The device, adapted and deployed for medical applications according to the invention, allows for improved patient safety, improved patient health monitoring, and improved diagnosis of patient pathological conditions. The device also allows for improved sensitivity, increased data transmission rate, improved signal-to-noise ratio, reduced crosstalk, and reduced energy consumption.

[0640] Vehicles adapted and deployed for flight

[0641] The vehicle adapted and positioned for flight is preferably adapted and positioned to transmit data via optical signals using at least one optoelectronic component, preferably at least one modulator and / or at least one photodetector. Here, data communication can be within the vehicle, between the vehicle and another entity (e.g., another vehicle, a ground station), or both. Data communication within the vehicle (e.g., between sensing units and integrated circuits within the vehicle) is particularly preferred.

[0642] Flight should preferably be understood to include both controlled and uncontrolled flight. Controlled flight should preferably be understood to mean that the movement of the vehicle can be controlled by, for example, a human operator and / or an integrated circuit (e.g., a processing unit). For example, an aircraft is adapted and positioned for flight control by a person and / or an autopilot. Here, the vehicle can be remotely controlled. Uncontrolled flight should preferably be understood to mean that the movement of the vehicle is generally not controlled by, for example, a human operator and / or an integrated circuit (e.g., a processing unit). For example, a weather balloon is generally adapted and positioned for uncontrolled flight. Flight should preferably be understood to include flight within and above the atmosphere. Flight should preferably be understood to include the trajectory of a vehicle, such as around the Earth.

[0643] Examples of propulsion components include engines, jet propulsion systems, hot air balloon burners, hot air balloon bladders, and balloons. Here, engines include, but are not limited to, jet engines and turbine engines.

[0644] An example of a component used to generate lift is an air wing.

[0645] The control system preferably includes control components and / or control modules. Examples of control components include rudders, elevators, and ailerons. Examples of control modules are integrated circuits adapted and arranged to control the movement of the control components.

[0646] Vehicles adapted and deployed for flight can be used for commercial and / or defense purposes.

[0647] The adapted and arranged vehicle for flight and according to the invention allows for improvements in vehicle (including passengers in the vehicle) safety, vehicle control, vehicle control during remote operation, and communication with the vehicle (e.g., including vehicle tracking, faster data transmission rates, and fewer interruptions when communicating with the vehicle).

[0648] Robotic systems

[0649] The term "robot system" should preferably be understood to include a robot body designed to perform tasks autonomously and / or under remote control. In a preferred aspect of the robot system, the robot system is adapted and arranged for the autonomous movement of the robot body.

[0650] Robotic systems can be used for commercial and / or defense purposes. For example, robotic systems may include industrial robots, service robots, personal and household robots, educational robots, research robots, and entertainment robots. The main body of the robot may be a robotic arm. A robotic arm typically consists of multiple segments connected by joints, similar to a human arm.

[0651] In a preferred aspect of the robot system, the robot system includes a data communication module, more preferably an optical data communication module. In this aspect, it is particularly preferred that the data communication module be arranged within the robot body. Alternatively, it is preferred that the data communication module be arranged at a location removed from the robot body (e.g., without contact with the robot body). Alternatively, it is preferred that the data communication module be partially arranged within the robot body (e.g., some sub-modules of the data communication module are arranged within the robot body, while other sub-modules are arranged at a location removed from the robot body). In this aspect, it is preferred that the data communication module be adapted and arranged for at least one or all of the following: data communication within the robot body (more preferably), and data communication between the robot body and an external entity. An example of data communication within the robot body is data transfer between different parts of the robot body (e.g., between different computer chips located within the robot body). An example of data communication between the robot body and an external entity is data transfer between the robot body and a computer located outside the robot body.

[0652] In a particularly preferred aspect of the robot system, the robot body includes a sensing unit. In another preferred aspect of the robot system, the sensing unit is arranged at a location removed from the robot body (e.g., without contacting the robot body). In yet another preferred aspect of the robot system, the sensing unit is partially arranged within the robot body (e.g., some sub-modules of the sensing unit are arranged within the robot body, while other sub-modules of the sensing unit are arranged at a location removed from the robot body).

[0653] In a particularly preferred aspect of the robot system, the robot body includes a control module. In another preferred aspect of the robot system, the control module is arranged at a location removed from the robot body (e.g., without contacting the robot body). In yet another preferred aspect of the robot system, the control module is partially arranged within the robot body (e.g., some sub-modules of the control module are arranged within the robot body, while other sub-modules of the control module are arranged at a location removed from the robot body).

[0654] In a particularly preferred aspect of the robot system, at least one or all of the following constitute a part of the robot body: a data communication module, a sensing unit, and a control module. In an alternative preferred aspect of the robot system, the robot body does not include a data communication module, a sensing unit, or a control module.

[0655] The robot system according to the present invention allows for improvements in the reliability of the robot system, improvements in communication within the robot system (e.g., data transmission rate), improvements in safety, increases in the versatility of the robot system, and reductions in the energy consumption of the robot system.

[0656] Second assembly

[0657] The second assembly is preferably adapted and arranged for optical computing. As used herein, the second assembly should preferably be understood as applying optical and photonic principles to a computing architecture that incorporates at least one or all of the following: data processing, data transmission, and data storage.

[0658] In a preferred aspect of the second assembly, at least one or more memory cells are at least one or more optical memory cells and at least one or more processors are at least one or more optical processors.

[0659] In a preferred aspect of the second assembly, the memory cell includes at least one or all of the following: a modulator and a photodetector. In a preferred aspect of the second assembly, the processor includes at least one or all of the following: a modulator and a photodetector.

[0660] Optical processors preferably include at least one or all of the following: optical switches, optical transistors. Examples of optical processors include photonic integrated circuits (PICs), Fourier optical processors, optical neural networks (ONNs), all-optical switches, and quantum optical processors.

[0661] Examples of optical memory units include holographic memory, photorefractive crystals, optical RAM (ORAM), phase change materials, and fiber delay lines.

[0662] In a preferred aspect of the second assembly, at least one component (e.g., a modulator, a photodetector) is arranged in at least one or all of the following: at least one processor, at least one memory unit, and a data communication module. If "at least one component is arranged in at least one processor and at least one memory unit," then this should preferably be understood to mean that at least one component is arranged in at least one processor and at least one component is arranged in at least one memory unit (i.e., the second assembly comprises at least two components). If "at least one component is arranged in at least one processor and at least one data communication module," then this should preferably be understood to mean that at least one component is arranged in at least one processor and at least one component is arranged in at least one data communication module (i.e., the second assembly comprises at least two components). If "at least one component is arranged in at least one data communication module and at least one memory unit," then this should preferably be understood to mean that at least one component is arranged in the data communication module and at least one component is arranged in at least one memory unit (i.e., the second assembly comprises at least two components). If “at least one component is arranged in at least one processor, at least one memory unit and a data communication module”, then this should preferably be understood to mean that at least one component is arranged in at least one processor, at least one component is arranged in at least one memory unit and at least one component is arranged in a data communication module (i.e., the second assembly includes at least three components).

[0663] The second assembly according to the invention allows for increased computing speed, improved energy efficiency, improved scalability, and improved immunity to electromagnetic interference.

[0664] Optical calculations are described, for example, in WO2023145206 A1 and WO2021245701 A1.

[0665] Third assembly

[0666] Homomorphic encryption should preferably be understood as an encrypted form that allows mathematical computations to be performed on encrypted data without prior decryption. For example, it enables direct computation on ciphertext to produce an encrypted result, which, upon decryption, corresponds to the result of an operation performed on unencrypted data. Photonic homomorphic encryption should preferably be understood as a technique that combines the principles of photonics and homomorphic encryption to perform computations on encrypted data using optical signals. In photonic homomorphic encryption, photonic components and technologies are used to perform encryption and / or decryption while preserving homomorphic properties to allow computations on the encrypted data without decryption. A third component adapted and arranged for photonic homomorphic encryption is preferably used for at least one or all of the following: secure data processing, cloud computing, secure multi-party computation, and privacy-preserving data analysis.

[0667] Examples of photonic encryption and / or decryption modules include optical phase encoders and / or decoders, optical polarization encoders and / or decoders, optical frequency encoders and / or decoders, encryption and / or decryption modules based on optical chaos, quantum key distribution systems, and optical one-time password systems.

[0668] In a preferred aspect of the third assembly, the third assembly includes at least one or all of the following: a modulator, a photodetector.

[0669] In a preferred aspect of the third assembly, at least one component (e.g., a modulator, a photodetector) is arranged in at least one or all of the following: a homomorphic operation module, a photonic encryption module, and a photonic decryption module. If "at least one component is arranged in both the homomorphic operation module and the photonic encryption module," then this should preferably be understood to mean that at least one component is arranged in both the homomorphic operation module and the photonic encryption module (i.e., the third assembly comprises at least two components). If "at least one component is arranged in both the homomorphic operation module and the photonic decryption module," then this should preferably be understood to mean that at least one component is arranged in both the homomorphic operation module and the photonic decryption module (i.e., the third assembly comprises at least two components). If "at least one component is arranged in both the photonic encryption module and the photonic decryption module," then this should preferably be understood to mean that at least one component is arranged in both the photonic encryption module and the photonic decryption module (i.e., the third assembly comprises at least two components). If “at least one component is arranged in the homomorphic operation module, the photonic encryption module and the photonic decryption module”, then this should preferably be understood to mean that at least one component is arranged in the homomorphic operation module, at least one component is arranged in the photonic encryption module and at least one component is arranged in the photonic decryption module (i.e., the third assembly includes at least three components).

[0670] The light-emitting component optically connected to the homomorphic operation module is preferably optically connected to at least one optoelectronic component (e.g., modulator) arranged in the homomorphic operation module. The light-emitting component optically connected to the photonic encryption module is preferably optically connected to at least one optoelectronic component (e.g., modulator) arranged in the photonic encryption module. The light-emitting component optically connected to the photonic decryption module is preferably optically connected to at least one optoelectronic component (e.g., modulator) arranged in the photonic decryption module.

[0671] The third assembly according to the invention allows for improved computing speed, improved energy efficiency, improved scalability, improved electromagnetic interference resistance, improved encryption, improved encryption and decryption speed, enhanced security, and improved compatibility with optical networks.

[0672] Homomorphic encryption is described in, for example, WO2022213048 A1, US20220116198 A1, US20220366059 A1 and US20240022394 A1.

[0673] Optical connection module

[0674] Optical connection modules should preferably be understood as links that transmit data between electrical components and / or components (e.g., between processors, memory modules, input / output components, and network equipment) using optical signals typically transmitted via waveguides, optical fibers, and / or free-space optical channels.

[0675] The transmitter is adapted and arranged to convert electrical signals received from, for example, electrical components and / or integrated circuits, into optical signals. The receiver is adapted and arranged to convert optical signals into electrical signals for transmission to, for example, electrical components and / or integrated circuits. The transceiver is adapted and arranged to both convert electrical signals into optical signals and optical signals into electrical signals.

[0676] The optical connection module according to the present invention allows for increased bandwidth, reduced latency, increased transmission distance, reduced sensitivity to electromagnetic interference, increased security, improved compactness, reduced insertion loss, and improved energy efficiency.

[0677] Optical connection modules are described in, for example, WO2023124580 A1, WO2023122711 A1 and US20230314711 A1.

[0678] First and another transport component

[0679] Transportation components include vehicles (e.g., cars, trucks), trains, airplanes, ships, bicycles, drones, and satellites. Examples of autonomous movement include autonomous driving, autonomous flight, autonomous navigation, and autonomous walking.

[0680] The processing module is preferably adapted and arranged for executing instructions and performing calculations. The processing module preferably includes a processing unit. In a preferred aspect of the first transport member, the processing module includes at least one component according to the invention (preferably an optoelectronic component, such as a modulator or photodetector). In a preferred aspect of the first transport member, the processing module includes at least one light-emitting component.

[0681] Examples of human-machine interfaces include screens (preferably touchscreens), devices adapted and arranged to play sound, and devices adapted and arranged to transmit signals (preferably light signals). Examples of steering components include steering wheels, rudders, handlebars, and ailerons. Examples of propulsion components include internal combustion engines, jet engines, sails, and bicycle drive systems.

[0682] The sensing unit may include at least one or all of the following: photodetector, photodiode, phototransistor, image sensor, fiber optic sensor, laser diode, optical biosensor, optical position sensor, optical touch sensor, photomultiplier tube, avalanche photodiode, charge-coupled device, complementary metal-oxide-semiconductor sensor, thermal infrared detector, photon counting detector, and superconducting nanowire single-photon detector.

[0683] The perception submodule is adapted and positioned to analyze and / or process data of the target area obtained by the sensing unit, wherein the data may be images, sound, and / or other sensor readings. The output of the perception submodule is preferably structured data, which represents the interpretation and / or analysis of data obtained by the sensing unit (e.g., object detection and identification, scene information, localization and mapping data (preferably including road geometry and / or landmarks), feature extraction results (including edges, corners, textures, shapes, and / or key points) and / or pattern recognition output).

[0684] The generation submodule can be used, for example, in autonomous systems. The generation submodule is adapted and positioned to process and / or analyze data provided by the perception module to determine actions and / or responses, for example, based on predefined goals, rules, and / or constraints. For example, the generation submodule outputs drive commands, including trajectory planning, path selection, and control commands for steering, acceleration, and braking of the autonomous vehicle. The control unit can then execute the drive commands generated by the generation submodule and control the movement of the transport components accordingly.

[0685] Another transport component preferably includes an integrated circuit adapted and arranged to communicate data with at least one electrical component (preferably an optoelectronic component, such as a modulator or photodetector). Another transport component preferably includes a light-emitting component adapted and arranged to be optically connected to at least one optoelectronic component (e.g., a modulator).

[0686] The first and another transport components according to the invention allow for improved safety, enhanced traffic efficiency, reduced environmental impact, increased accessibility, enhanced user experience, increased scalability, and increased adaptability.

[0687] Transport components are described, for example, in DE102021121918 A1.

[0688] Fourth assembly

[0689] The fourth assembly preferably includes a light-emitting component adapted and arranged to be optically connected to at least one optoelectronic component (e.g., a modulator).

[0690] Examples of artificial intelligence (AI) include using, for example, machine learning to perceive, synthesize, infer, predict, and / or generate information. For example, the fourth component may use a combination of hardware and software to perform operations to perceive, synthesize, infer, predict, and / or generate information.

[0691] The fourth assembly according to the invention allows for handling increased data volume, faster processing speeds, reduced sensitivity to electromagnetic interference, and lower energy consumption. The fourth assembly according to the invention also enables massive parallelism (e.g., parallel computing) and high-speed data processing, such as big data analytics, neural network training, and real-time simulation.

[0692] Combinations for machine AI and machine learning are described in, for example, US20230114847 A1, WO2018187487 A1 and US20220188155 A1.

[0693] Previous process layer

[0694] The front-end process (FEOL) layer is well known to those skilled in the art. An example of a front-end process layer is a layer comprising one or more electronic components (more preferably integrated electronic components). Here, preferred examples of electronic components include transistors, capacitors, diodes, and resistors. Another example of a front-end process layer is a layer comprising integrated circuits.

[0695] Test methods

[0696] The following test methods are used in the context of this invention. Unless otherwise stated, measurements are taken at an ambient temperature of 23°C, an ambient air pressure of 100 kPa (0.986 atm), and a relative humidity of 50%.

[0697] Preparation of sample slices

[0698] To produce sample sheets, a focused ion beam is used to form cuts through the layered structure of the component or component precursor. The cut plane is parallel to the layer sequence, i.e., the direction of layer thickness. The sample sheet thickness is 50 nm. Sample sheet preparation is automated using Thermo Scientific AutoTEM 5 software from Thermo Fisher Scientific Inc.

[0699] size

[0700] Scanning electron microscopy (SEM) was used to determine the length and width of the layers of the component and its precursor.

[0701] Layer thicknesses (excluding graphene layers) of the component and its precursor were measured using a transmission electron microscope (TEM) on sample sheets prepared as described above. The sample sheets and the TEM were also used to measure distances between layers. The TEM apparatus was calibrated and used according to standard ISO 29301:2017.

[0702] RC time constant

[0703] The RC time constant between the first and second conductive layers was measured using a vector network analyzer (VNA) connected to the component via a shielded cable transmission line. RF semiconductor probes (Infinity probes from FormFactor, USA) were connected to the component. The measurement setup was calibrated to isolate the component's RC behavior to suppress the influence of interconnects on the measurement. The VNA was calibrated using the multireflect-Thru method described by Lewandowski and Gu (2017) in "A Multireflect-Thru Method of Vector Network Analyzer Calibration" in IEEE Transactions on Microwave Theory and Techniques, Vol. 65, No. 3, p. 905.

[0704] Composition

[0705] In addition to graphene, the composition of the layers was determined using electron energy-loss spectroscopy (EELS). This method was performed on a sample sheet of the component or a component precursor. The sample sheet was prepared as described above. EELS was described by F. Hofer et al. in “Fundamentals of electron energy-loss spectroscopy”, EMAS 2015 Workshop, IOP Conf.Series: Materials Science and Engineering, Vol. 109, No. 012007, 2016.

[0706] The presence of graphene can be determined using Raman spectroscopy. A 514 nm Raman spectrum was measured. The G peak is located at approximately 1,581 cm⁻¹. -1 The 2D peak depends on the laser wavelength and is typically around 2,700 cm⁻¹. -1The G peak and the 2D peak together identify carbon layers. The shape of the 2D peak indicates the number of graphene layers, as seen in Andrea C. Ferrari and Denis M. Basko's article "Raman spectroscopy as a versatile tool for studying the properties of graphene" in *Nature Nanotechnology*, April 2013, Vol. 8, No. 4, Article No. 4, DOI: 10.1038 / NNANO.2013.46. Figure 4 As shown in a, 4c, and 4f. In addition... Figure 1 f shows the shear mode (C) transition of multilayer graphene, where single-layer graphene (SLG) does not show a shear mode.

[0707] The Raman spectra of graphite and multilayer graphene consist of two completely different sets of peaks. The first set of peaks is caused by in-plane vibrations. Examples of such peaks are the D, G, and 2D peaks. These peaks are present in both single-layer graphene (SLG) and multilayer graphene. The other set of peaks is caused by the motion of planes relative to each other, perpendicular or parallel to their normals. Examples of such peaks are the shear (C) mode and layer breathing (LBM) mode. These peaks are not present in SLG. Low-frequency Ep in graphite... 2g The pattern (also known as pattern C) is at approximately 42 cm. -1 This mode C peak is sensitive to interlayer coupling. Therefore, the absence of a mode C peak generally indicates SLG. However, special care must be taken to ensure that the mode C peak is not absent for any other reason. Furthermore, mode C is proportional to the number of carbon layers. For example, for bilayer graphene (BLG), mode C is located at approximately 31 cm⁻¹. -1 The peak frequency of mode C is below the cutoff of notch and edge filters in many spectrometers, especially those used for production line monitoring. This problem is overcome by combining a BragGrate filter with a single monochromator. This allows for the measurement of Pos(C) of any number of graphene layers.

[0708] Selective

[0709] The etching rate of a specific layer was measured as follows: A test layer with a thickness of 500 nm and made of the same material as the layer under study was provided. The test layer was then subjected to an etching method, i.e., to an etchant environment containing the etchant of the method under study. The time required to reduce the thickness of the test layer by 300 nm was measured (i.e., after the etching method was completed, the test layer had a thickness of 200 nm). The intermediate etching rate was then determined by dividing 300 nm by the measurement time. The test was repeated 10 times to obtain 10 intermediate etching rates. The etching rate of the layer under study was then calculated by averaging the 10 intermediate etching rates.

[0710] The selectivity of a particular etching method (first or another etching method) relative to dielectric layer B for dielectric layer A is the ratio of the etching rate of this etching method for layer A to the etching rate of this etching method for layer B. The selectivity of a particular etching method (first or another etching method) relative to dielectric layer A for dielectric layer B is the ratio of the etching rate of this etching method for layer B to the etching rate of this etching method for layer A. Wherein, all etching rates are determined as generally described above.

[0711] Refractive index

[0712] First, sample sheets of the layered structure of the component or component precursor to be studied are prepared as described above. Using the sample sheets, the layer thicknesses of individual layers are determined by TEM, also as described above. Based on the measured layer thicknesses, the sample sheets are further used to determine the refractive index of the layer of interest by ellipsometric measurement according to ISO 23131:2021(en). Model 7.3 is used as a reference.

[0713] electrical conductivity

[0714] The conductivity of a thin film is measured using a four-point probe. The four-point probe consists of four equidistant, collinear electrical probes. It works by applying a DC current (I) between the two outer probes and measuring the resulting voltage drop between the two inner probes. To operate. For films where the film thickness (t) is at least 1,000 times the probe spacing, the sheet resistance (R) S )yes:

[0715]

[0716] I is the voltage change measured between the inner probes, and I is the current applied between the outer probes. Conductivity ( ) is defined as:

[0717]

[0718] Photodetector responsivity

[0719] The responsivity of a photodetector is a measure of its photoelectric conversion efficiency. It is expressed as the photocurrent (in mA) generated per mW of optical signal. To measure the responsivity, a tunable laser is used to provide a wavelength-tunable light source, and a variable attenuator adjusts the optical power level sent to the photodetector under test. For measurement, the optical power level must be sufficiently high (greater than approximately 50 μW) to avoid nonlinear effects in the photodetector, but still low enough to represent the low power consumption expected in telecommunications applications. Therefore, a transimpedance amplifier (TIA) must be used to linearly convert the relatively weak photocurrent into a voltage signal. A voltmeter is then used to measure the voltage signal at the TIA output, proportional to the photocurrent generated by the photodetector. A calibrated optical power meter is used to measure the absolute power level of the optical signal. The voltage signal obtained from the photocurrent is measured for 10 equidistant optical power levels. For each of these optical power levels, the ratio of the voltage signal (mV) to the power level (in mW) as measured by the optical power meter is calculated. The arithmetic mean of the 10 ratios is calculated as a measure of the photodetector's responsivity.

[0720] Modulation speed of modulator

[0721] Here, the modulation speed of the modulator is its cutoff frequency. To determine the modulation speed of the modulator, it is connected to a calibrated vector network analyzer (VNA) with a bandwidth higher than the modulator's cutoff frequency. The RF output port of the VNA is connected to the electrical signal input from the modulator, and the RF input signal in the VNA is connected to a calibrated optical receiver. The optical receiver and all other equipment used in the measurement (e.g., cables, connectors, probes, etc.) should be completely embedded in the measurement. It is important to ensure that the bandwidth of the optical receiver and other components of the test setup are not limiting factors for the modulation speed measurement. A laser sends light to the optical input port of the modulator, where the light is modulated and directed to the calibrated optical receiver. The VNA measures the S21 (forward transmission) parameter, which is the ratio of the RF input to the RF output, having both magnitude and phase terms. The S21 parameter is measured over a frequency range from DC to well above the cutoff frequency of the modulator with increased frequency load. The lowest frequency at which the S21 parameter amplitude drops by 3 dB compared to the maximum amplitude at DC is called the modulation speed.

[0722] Example

[0723] The invention is further illustrated by examples. However, the invention is not limited to these examples.

[0724] All graphene samples and control samples were purchased from Grahenea SA (Spain), Graphene Laboratories Inc. (USA), and Grolltex (USA).

[0725] For each of Examples 1 and 2 and Comparative Examples 1 and 2, 5,000 photodetectors were fabricated on a standard silicon wafer with a diameter of 200 mm and a thickness of 725 mm, serving as a substrate.

[0726] Example 1

[0727] Preparation such as Figure 14a The component precursor (without a substrate) is schematically shown in the diagram. Figure 14a In this diagram, the length direction of the component precursor and individual layers points towards the plane of the image. A 3,000 nm thick SiO2 layer is generated on a silicon wafer by hydrothermal oxidation. A 350 nm thick SiN layer is coated on the aforementioned SiO2 layer by PVD. The SiN layer is patterned by photolithography to obtain a partial SiN layer for each photodetector to fabricate a waveguide. Reactive ion etching is used to partially remove the SiN. Another SiO2 layer is deposited on the first SiO2 layer and the waveguide by PECVD to embed the waveguide. The other SiO2 layer is 1,000 nm thick. The other SiO2 layer is planarized and removed downwards to the top surface of the waveguide by chemical mechanical polishing (CMP). An embedded waveguide layer is obtained. Subsequently, a 10 nm thick Al2O3 layer is coated on the embedded waveguide layer by atomic layer deposition. A single graphene layer is coated on the Al2O3 layer by graphene lamination. The graphene layer is 1 atom thick, i.e., has a thickness of less than 1 nm. Photolithography with dry etching is used to pattern the graphene layers to obtain a partial graphene layer for each waveguide, wherein each partial graphene layer covers the entire width of the corresponding waveguide and extends further on both sides of the waveguide, such as... Figure 14a As described in [reference needed]. Furthermore, a 20 nm thick Al2O3 layer is coated onto the first Al2O3 layer and the patterned graphene layer via atomic layer deposition. Thus, the graphene sheet is completely embedded in the Al2O3. Another SiO2 layer is coated onto the embedded graphene layer via PECVD. This SiO2 layer is 30 nm thick. Each of the graphene sheets has a length of 100 µm.

[0728] Through-holes extending from the top SiO2 surface of the precursor through the upper SiO2 layer are fabricated using photolithography, such as... Figures 14a) to 14f) The description generally focuses on a single through-hole. Oxygen plasma is used to... Figures 14e) to 14f)The removal of photoresist as indicated in the steps. Each via is circular in cross-section and has a diameter of 500 nm. Here, a pair of two vias are formed equidistantly every 1 μm along the length of the graphene sheet. The first via of each pair extends from the top surface of the precursor in the direction of the first end region of the corresponding graphene sheet, as shown. Figure 14f As described in [reference needed]. The other via of each pair extends from the top surface of the precursor in the direction of the other end region of the corresponding graphene sheet, said other end region being opposite the first end region in the width direction of the graphene sheet. Reactive ion etching is used as the first etching method to create vias in the top SiO2 layer (dielectric layer A). The vias are used to fabricate pathways, such as... Figures 8 to 10 The following describes a single via in general terms. Here, atomic layer etching is used as another etching method to extend the via partially through the Al2O3 (dielectric layer B) to the top surface of the graphene sheet. The selectivity of the first etching method relative to dielectric layer B for dielectric layer A is 50. The selectivity of the other etching method relative to dielectric layer B for dielectric layer A is 0.1. The vias are filled with a titanium substrate by PVD and then with tungsten metal filler by CVD. The first via of each pair is electrically connected to the top surface of the corresponding graphene sheet in its first end region. The other via of each pair is connected to the top surface of the same graphene sheet in its other end region. Excess via material on the top SiO2 layer is removed by CMP. Figure 3 The text describes a single one of 5,000 photodetectors obtained on a chip in this way.

[0729] Example 2

[0730] Preparation such as Figure 14a The component precursor (without a substrate) is schematically shown in the diagram, as described above with respect to Example 1. Furthermore, vias extending from the top SiO2 surface of the precursor through the upper SiO2 layer are fabricated by photolithography, also as described above with respect to Example 1.

[0731] Each graphene sheet uses a pair of two through-holes per 1 μm length to create pathways, such as... Figures 11 to 13 The following describes the process for a single via in general terms. Here, reactive ion etching is used as another etching method to allow the via to extend partially through the Al2O3 (dielectric layer B) and also through the corresponding graphene sheet. The selectivity of the first etching method relative to dielectric layer B for dielectric layer A is 50. The selectivity of the other etching method relative to dielectric layer B for dielectric layer A is 0.2. The vias are filled with a titanium substrate by PVD and then with tungsten metal filler by CVD. The first via of each pair extends through the corresponding graphene sheet in its first end region and is therefore electrically connected to the graphene sheet. The other via of each pair extends through the same graphene sheet in its other end region and is therefore electrically connected to the graphene sheet. Excess via material on the top SiO2 layer is removed by CMP. Figure 4 The text describes a single one of 5,000 photodetectors obtained on a chip in this way.

[0732] Compare with Example 1

[0733] Preparation such as Figure 16a The component precursor (without a substrate) is schematically shown in the diagram. Figure 16a In this diagram, the length direction of the component precursor and individual layers points towards the plane of the image. A 3,000 nm thick SiO2 layer is generated on a silicon wafer by hydrothermal oxidation. A 350 nm thick SiN layer is coated on the aforementioned SiO2 layer by PVD. The SiN layer is patterned by photolithography to obtain a partial SiN layer for each photodetector to fabricate a waveguide. Reactive ion etching is used to partially remove the SiN. Another SiO2 layer is deposited on the first SiO2 layer and the waveguide by PECVD to embed the waveguide. The other SiO2 layer is 1,000 nm thick. The other SiO2 layer is planarized and removed downwards to the top surface of the waveguide by CMP. An embedded waveguide layer is obtained. Subsequently, a 10 nm thick Al2O3 layer is coated on the embedded waveguide layer by atomic layer deposition. A single graphene layer is coated on the Al2O3 layer by graphene lamination. The graphene layer is 1 atom thick, i.e., has a thickness of less than 1 nm. Photolithography with dry etching is used to pattern the graphene layers to obtain a partial graphene layer for each waveguide, wherein each partial graphene layer covers the entire width of the corresponding waveguide and extends further on both sides of the waveguide, such as... Figure 16a As described in [reference needed]. Furthermore, a 20 nm thick Al2O3 layer is coated onto the first Al2O3 layer and the patterned graphene layer via atomic layer deposition. Therefore, the graphene sheet is completely embedded in the Al2O3. Each of the graphene sheets has a length of 100 µm.

[0734] Through-holes extending partially through the Al2O3 layer from the top surface of the precursor to the top surface of the graphene sheet are fabricated using photolithography, such as... Figures 16a) to 16f) The description generally focuses on a single through-hole. Oxygen plasma is used to... Figures 16e) to 16f) The removal of photoresist as indicated in the steps. Each via is circular in cross-section and has a diameter of 500 nm. Here, a pair of two vias are formed equidistantly every 1 μm along the length of the graphene sheet. The first via of each pair extends from the top surface of the precursor to the top surface of the corresponding graphene sheet in the first end region of the graphene sheet, as shown. Figure 16fAs described in [reference needed]. Another via in each pair extends from the top surface of the precursor to the top surface of the same graphene sheet in the opposite end region of the graphene sheet, said opposite end region being opposite to the first end region in the width direction of the graphene sheet. Atomic layer etching is used to create the vias. Acetone is used to clean any remaining photoresist from the top surface of the precursor. The vias are used to create pathways, such as... Figure 16g )and Figure 16h The diagram below describes a single via in general terms. For this purpose, vias are filled with a titanium substrate via PVD and then with tungsten metal filler via CVD. The first via of each pair is electrically connected to the top surface of the corresponding graphene sheet in its first end region. The other via of each pair is connected to the top surface of the same graphene sheet in its other end region. After photolithographic contact definition, excess via material on the top Al2O3 layer is removed by dry etching.

[0735] Compare with Example 2

[0736] Prepared in the same manner as described above for Control Example 1. Figure 17a The component precursor (without a substrate) is schematically shown in the figure.

[0737] Through-holes are fabricated by photolithography, extending partially through the Al2O3 layer from the top Al2O3 surface of the precursor and completely through the graphene sheet, such as... Figures 17a) to 17f) The description generally focuses on a single through-hole. Oxygen plasma is used to... Figures 17e) to 17f) The removal of photoresist as indicated in the steps described above. Each via is circular in cross-section and has a diameter of 500 nm. Here, a pair of two vias are formed equidistantly every 1 μm along the length of the graphene sheet. The first via of each pair extends from the top surface of the precursor through the corresponding graphene sheet in the first end region of the graphene sheet, as shown in the figure. Figure 17f As described in [reference needed]. For each pair, the other via extends from the top surface of the precursor through the same graphene sheet in the opposite region of the graphene sheet, opposite to the first region in the width direction of the graphene sheet. Reactive ion etching is used to create the vias. Acetone is used to clean any remaining photoresist from the top surface of the precursor. The vias are used to create pathways, such as... Figure 17g) and 17h) The following describes a single via in general terms. For this purpose, vias are filled by PVD with a titanium substrate and then by CVD with tungsten metal filler. The first via of each pair electrically extends through the corresponding graphene sheet in its first end region and is thus electrically connected to the graphene sheet. The other via of each pair extends through the same graphene sheet in its other end region and is thus electrically connected to the graphene sheet. After photolithographic contact definition, excess via material on the top Al2O3 layer is removed by dry etching.

[0738] For each of Examples 3 and 4 and Comparative Examples 3 and 4, 5,000 modulators were fabricated on a standard silicon wafer with a diameter of 200 mm and a thickness of 725 mm, which served as a substrate.

[0739] Example 3

[0740] Preparation such as Figure 5 The modulator described in [the document]. In Figure 5 In the diagram, the modulator and individual layers are oriented along the longitudinal direction of the image plane. A 3,000 nm thick SiO2 layer is deposited on a silicon wafer using PECVD. A 350 nm thick SiN layer is then formed on the aforementioned SiO2 layer using hydrothermal oxidation. The SiN layer is patterned using photolithography to obtain a partial SiN layer for each modulator to fabricate a waveguide. Reactive ion etching is used to partially remove the SiN. Another SiO2 layer is deposited on the first SiO2 layer and the waveguide using PECVD to embed the waveguide. This other SiO2 layer is 1,000 nm thick. The other SiO2 layer is planarized and removed downwards to the top surface of the waveguide using CMP. This yields the embedded waveguide layer. Subsequently, a 10 nm thick Al2O3 layer is deposited on the embedded waveguide layer using atomic layer deposition. A first single graphene layer is deposited on the Al2O3 layer using graphene lamination. The graphene layer is one atom thick, i.e., less than 1 nm thick. Photolithography with dry etching is used to pattern the graphene layer to obtain a partial graphene layer for each waveguide, wherein each partial graphene layer covers the entire width of the corresponding waveguide and extends further on one side of the waveguide, such as... Figure 5 As described in the paper, a 10 nm thick Al2O3 layer is deposited on a first Al2O3 layer and a first patterned graphene layer via atomic layer deposition to embed a graphene sheet of the first patterned graphene layer. Subsequently, another graphene layer is deposited on top of the Al2O3 layer by graphene lamination. The thickness of the other graphene layer is the same as that of the first graphene layer. The other graphene layer is patterned using photolithography with wet etching to obtain another portion of the graphene layer for each waveguide, wherein each other portion of the graphene layer covers the entire width of the corresponding waveguide and extends further on the other side of the waveguide, as shown in the figure. Figure 5 As explained in the text. Furthermore, a 20 nm thick Al2O3 layer was coated onto Al2O3 and another patterned graphene layer via atomic layer deposition. Thus, the other graphene sheet was also completely embedded in Al2O3. Subsequently, another SiO2 layer was coated onto the embedded graphene layer via PECVD. This SiO2 layer was 30 nm thick. Each of the graphene sheets has a length of 100 μm.

[0741] Vias extending from the top SiO2 surface of the precursor through the upper SiO2 layer are fabricated by photolithography. Photoresist is removed using oxygen plasma. Each via is circular in cross-section and has a diameter of 500 nm. Here, a pair of two vias are formed equidistantly every 1 μm along the length of the graphene sheet. The first via of each pair extends from the top surface of the precursor in a direction that does not overlap with the end region of the upper graphene sheet of the corresponding lower graphene sheet and the corresponding waveguide. The other via of each pair extends from the top surface of the precursor in a direction that does not overlap with the end region of the corresponding lower graphene sheet of the corresponding upper graphene sheet and the corresponding waveguide. Reactive ion etching is used as the first etching method to create vias in the top SiO2 layer (dielectric layer A). The vias are used to create pathways. Here, atomic layer etching is used as another etching method to allow the vias to partially extend through Al2O3 (dielectric layer B) to the top surface of the graphene sheet. The selectivity of the first etching method relative to dielectric layer B for dielectric layer A is 50%. Another etching method has a selectivity of 0.1 relative to dielectric layer B for dielectric layer A. Vias are filled by PVD with a titanium substrate, followed by CVD with tungsten metal filler. The first via of each pair is electrically connected to the top surface of the corresponding upper graphene sheet in its non-overlapping end region. The other via of each pair is connected to the top surface of the corresponding lower graphene sheet in its non-overlapping end region. Excess via material on the top SiO2 layer is removed by CMP. Figure 5 The text explains how a single modulator is obtained from 5,000 modulators on a chip.

[0742] Example 4

[0743] Preparation such as Figure 6 The modulator described in [the document]. In Figure 6 In the diagram, the modulator and the length direction of individual layers point towards the plane of the graph. A precursor with an embedded waveguide layer, an upper and lower graphene sheet embedded in Al2O3, and a SiO2 top layer is fabricated as described above for Example 3.

[0744] Vias extending from the top SiO2 surface of the precursor through the upper SiO2 layer are fabricated by photolithography, as described above for Example 3. These vias are used to create pathways. Here, reactive ion etching is used as another etching method to allow the vias to partially extend through the Al2O3 (dielectric layer B) and also through the corresponding graphene sheet. The selectivity of the first etching method relative to dielectric layer B for dielectric layer A is 50%. The selectivity of the other etching method relative to dielectric layer B for dielectric layer A is 0.2. The vias are filled with a titanium substrate by PVD and then with tungsten metal filler by CVD. The first pathway of each pair extends through the corresponding upper graphene sheet in its non-overlapping end region and is therefore electrically connected to this graphene sheet. The other pathway of each pair extends through the corresponding lower graphene sheet in its non-overlapping end region and is therefore electrically connected to this graphene sheet. Excess pathway material on the top SiO2 layer is removed by CMP. Figure 6 The text explains how a single modulator is obtained from 5,000 modulators on a chip.

[0745] Compare with Example 3

[0746] The component precursor without through-holes is prepared as described with respect to Example 3. However, the SiO2 top layer is omitted here.

[0747] Subsequently, vias extending partially through the Al2O3 surface of the precursor to the top surface of the graphene sheet are fabricated by photolithography. Photoresist is removed using oxygen plasma. Each via is circular in cross-section and has a diameter of 500 nm. Here, a pair of two vias are formed equidistantly every 1 μm along the length of the graphene sheet. The first via of each pair extends from the top surface of the precursor to the top surface of the upper graphene sheet in the end region of the graphene sheet that does not overlap with the corresponding lower graphene sheet and the corresponding waveguide. The other via of each pair extends from the top surface of the precursor to the top surface of the corresponding lower graphene sheet in the end region of the lower graphene sheet that does not overlap with the corresponding upper graphene sheet and the corresponding waveguide. Atomic layer etching is used to create the vias in the Al2O3 layer. Acetone is used to clean the remaining photoresist from the top surface of the precursor. The vias are used to fabricate pathways. For this purpose, vias are filled with a titanium substrate via PVD and then with tungsten metal filler via CVD. The first via of each pair is electrically connected to the top surface of the corresponding upper graphene sheet in its non-overlapping end region. The other via of each pair is connected to the top surface of the corresponding lower graphene sheet in its non-overlapping end region. After photolithographic contact definition, excess via material on the top Al2O3 surface is removed by dry etching.

[0748] Compare with Example 4

[0749] The component precursor without through-holes is prepared as described with respect to Example 3. However, the SiO2 top layer is omitted here.

[0750] Subsequently, vias extending partially through the Al2O3 surface of the precursor and completely through the graphene sheet are fabricated by photolithography. Photoresist is removed using oxygen plasma. Each via is circular in cross-section and has a diameter of 500 nm. Here, a pair of two vias are formed equidistantly every 1 μm along the length of the graphene sheet. The first via of each pair extends from the top surface of the precursor through the upper graphene sheet in the end region of the upper graphene sheet, which does not overlap with the corresponding lower graphene sheet and the corresponding waveguide. The other via of each pair extends from the top surface of the precursor through the corresponding lower graphene sheet in the end region of the lower graphene sheet, which does not overlap with the corresponding upper graphene sheet and the corresponding waveguide. Reactive ion etching is used to create vias in the Al2O3 layer and graphene. Acetone is used to clean the remaining photoresist from the top surface of the precursor. The vias are used to create pathways. For this purpose, vias are filled with a titanium liner via PVD, followed by tungsten metal filler via CVD. The first via of each pair extends through the corresponding upper graphene sheet in its non-overlapping end region and is thus electrically connected to this graphene sheet. The other via of each pair extends through the corresponding lower graphene sheet in its non-overlapping end region and is thus electrically connected to this graphene sheet. After photolithographic contact definition, excess via material on the top Al2O3 surface is removed by dry etching.

[0751] Table 1 summarizes Examples 1 to 4 as described in detail above, along with some details of the comparative Examples 1 to 4, for comparison.

[0752]

[0753] Table 1 A detailed overview of Examples 1 to 4 and their corresponding examples.

[0754] Evaluate

[0755] The responsivity of 100 photodetectors in each of Examples 1 and 2 and Control Examples 1 and 2 was tested as described in the Test Methods section above. In each case, the 100 photodetectors to be tested were selected from locations uniformly distributed across the respective wafer. For each of Examples 1 and 2 and Control Examples 1 and 2, the width spanned by the responsivity of the corresponding 100 photodetectors was determined. Thus, for each of Examples 1 and 2 and Control Examples 1 and 2, the width of the responsivity was obtained. These four widths were compared to evaluate the distribution width of the responsivity of the photodetectors produced in Examples 1 and 2 and Control Examples 1 and 2. Qualitative results are given in Table 2 below.

[0756] The modulation speeds of 100 modulators in each of Examples 3 and 4 and Control Examples 3 and 3 were tested as described in the Test Methods section above. In each case, the 100 modulators to be tested were selected from locations uniformly distributed across the corresponding wafer. For each of Examples 3 and 4 and Control Examples 3 and 4, the width spanned by the modulation speeds of the corresponding 100 modulators was determined. Thus, for each of Examples 3 and 4 and Control Examples 3 and 4, the width of the modulation speeds was obtained. These four widths were compared to evaluate the distribution width of the modulation speeds of the modulators produced in Examples 3 and 4 and Control Examples 3 and 4. Qualitative results are also given in Table 2 below.

[0757] The qualitative results of the comparative tests are summarized in Table 2. Here, "++" indicates a more favorable result than "+", and "+" indicates a more favorable result than "-".

[0758]

[0759] Table 2 A summary of qualitative results from comparative tests on the distribution width of the photodetector's responsivity and the distribution width of the modulator's modulation speed.

[0760] Without being bound by any theoretical constraints, based on the results of the above comparative tests, the inventors believe that the reduction in the width of the responsivity distribution of the photodetector and the width of the modulation speed distribution of the modulator are caused by the improved uniformity of the contact resistance of the pathways in the electrically contacted graphene layer. This means that the variation in this contact resistance across all pathways on the wafer is reduced. A narrower distribution of responsivity and modulation speed allows for the production of more reliably designed computer chips suitable for operation at predetermined speeds. This is especially true because the slowest component of the chip determines the overall speed of the chip. In this sense, the present invention allows for a reduction in the defect rate of integrated circuit manufacturing. Therefore, the present invention improves the effective productivity of integrated circuit manufacturing.

[0761] Attached Figure Attached Figure Description

[0763] The accompanying drawings are for illustrative purposes only and should not be construed as limiting the invention. Furthermore, the drawings are not drawn to scale. They illustrate:

[0764] Figure 1 This is a cross-sectional schematic diagram of a component according to the present invention.

[0765] Figure 2 This is a cross-sectional schematic diagram of another component according to the present invention.

[0766] Figure 3 This is a cross-sectional schematic diagram of another component according to the present invention.

[0767] Figure 4 This is a cross-sectional schematic diagram of another component according to the present invention.

[0768] Figure 5 This is a cross-sectional schematic diagram of another component according to the present invention.

[0769] Figure 6 This is a cross-sectional schematic diagram of another component according to the present invention.

[0770] Figure 7 This is a flowchart of the method according to the present invention.

[0771] Figure 8 This is a cross-sectional schematic diagram of the component precursor provided in step A of the method according to the invention.

[0772] Figure 9 yes Figure 8 The diagram of step B of the method.

[0773] Figure 10 yes Figure 8 The diagram of step C of the method.

[0774] Figure 11 This is a cross-sectional schematic diagram of the component precursor provided in step A of the method according to the invention.

[0775] Figure 12 yes Figure 11 The diagram of step B of the method.

[0776] Figure 13 yes Figure 11 The diagram of step C of the method.

[0777] Figures 14a) to 14f) This is a diagram illustrating steps A] to F] of the method according to the present invention.

[0778] Figure 15 This is a schematic diagram of an electronic device according to the present invention.

[0779] Figures 16a) to 16h) This is a diagram illustrating a method for producing components, wherein neither the method nor the components are based on the present invention.

[0780] Figures 17a) to 17h) This is an illustration of another method for producing components, wherein neither the method nor the components are based on the present invention.

[0781] Figures 18 to 29 These are schematic diagrams illustrating various embodiments including components according to the present invention.

[0782] Attached Figure Description

[0783] Figure 1A schematic cross-sectional view of a component 100 according to the invention is shown. The component 100 includes a layer sequence comprising a dielectric layer A103, a dielectric layer B104, and an optical element layer 105 stacked one on top of the other in a given order from a first side 101 to an opposite side 102 of the component 100. The opposite side 102 is opposite to the first side 101. The optical element layer 105 is partially embedded in a dielectric layer C106, which is also a layer in the layer sequence and follows the dielectric layer B104 in a first direction 109 from the first side 101 to the opposite side 102. The dielectric layer C106 and the optical element layer 105 together form an embedded optical element layer 107. The layer sequence further includes a first electrical conductor layer 108, which is fully embedded in the dielectric layer B104 at a first distance 116 from the optical element layer 105. In a view taken in the first direction 109, a first region 110 of the first electrical conductor layer 108 and a first region 111 of the optical element layer 105 overlap each other. The first electrical conductor layer 108 includes a second region 114 and a third region 115, which, in the view taken in the first direction 109, do not overlap with the optical element layer 105. Furthermore, the first electrical conductor layer 108 has a first layer surface 112 facing away from the dielectric layer B 104. A first electrical connector 113 extends from the first layer surface 112 of the dielectric layer A 103, passes through the dielectric layer A 103, partially passes through the dielectric layer B 104, and is electrically connected to the second region 114 of the first electrical conductor layer 108. More specifically, the first electrical connector 113 is connected to the surface of the first electrical conductor layer 108 facing the first side 101 of the assembly 100. Dielectric layer A 103 is less resistant to the first etching method than dielectric layer B 104, and dielectric layer B 104 is less resistant to the other etching method than dielectric layer A 103.

[0784] Figure 2 A cross-sectional schematic diagram of another component 100 according to the present invention is shown. Figure 2 Component 100 and Figure 1 The first electrical connector 113 is the same as component 100, except that it is not connected to the surface of the first electrical conductor layer 108 facing the first side 101 of component 100, but extends through the second region 114 of the first electrical conductor layer 108 in the first direction 109 and is thereby electrically connected to the first electrical conductor layer 108.

[0785] Figure 3 A cross-sectional schematic diagram of another component 100 according to the present invention is shown. Figure 1 The description also applies to Figure 3 .remove Figure 1 In addition to the components of component 100, Figure 3Component 100 includes another electrical connector 301. This other electrical connector 301 extends from the first surface 112 of dielectric layer A 103, through dielectric layer A 103, partially through dielectric layer B 104, and is electrically connected to a third region 115 of the first electrical conductor layer 108. Similar to the first electrical connector 113, the other electrical connector 301 is connected to the surface of the first electrical conductor layer 108 facing the first side 101 of component 100. Each of the first electrical connector 113 and the other electrical connector 301 is a via obtained by filling vias with a titanium liner and a tungsten filler. The vias are circular in cross-section and each has a diameter of 500 nm. Dielectric layer A 103 is composed of SiO2 and has a layer thickness of 30 nm. Dielectric layer B 104 is composed of Al2O3 and also has a layer thickness of 30 nm. Dielectric layer C 106 is composed of SiO2 and has a layer thickness of 3,500 nm. Optical element layer 105 is a waveguide composed of SiN. The layer thickness of optical element layer 105 is 350 nm. The first electrical conductor layer 108 is a graphene sheet with a single-atom carbon layer thickness, i.e., a thickness of less than 1 nm. The first distance 116 is 10 nm. The selectivity of reactive ion etching, as a first etching method, relative to dielectric layer B relative to dielectric layer A is 50%. The selectivity of atomic layer etching, as another etching method, relative to dielectric layer B relative to dielectric layer A is 0.1. Figure 3 Component 100 is an optoelectronic component, more specifically, a photodetector according to Example 1 above.

[0786] Figure 4 A cross-sectional schematic diagram of another component 100 according to the present invention is shown. Figure 2 The description also applies to Figure 4 .remove Figure 2 In addition to the components of component 100, Figure 4Component 100 includes another electrical connector 301. This other electrical connector 301 extends from the first surface 112 of dielectric layer A 103, through dielectric layer A 103, partially through dielectric layer B 104, and through a third region 115 of the first electrical conductor layer 108, thereby electrically connecting to the first electrical conductor layer 108. Each of the first electrical connector 113 and the other electrical connector 301 is a via obtained by filling vias with a titanium liner and tungsten filler. The vias are circular in cross-section and each has a diameter of 500 nm. Dielectric layer A 103 is composed of SiO2 and has a layer thickness of 30 nm. Dielectric layer B 104 is composed of Al2O3 and also has a layer thickness of 30 nm. Dielectric layer C 106 is composed of SiO2 and has a layer thickness of 3,500 nm. Optical element layer 105 is a waveguide composed of SiN. The layer thickness of optical element layer 105 is 350 nm. The first electrical conductor layer 108 is a graphene sheet with a single-atom carbon layer thickness, i.e., a thickness of less than 1 nm. The first distance 116 is 10 nm. The selectivity of reactive ion etching, as a first etching method, relative to dielectric layer B for dielectric layer A is 50%. The selectivity of reactive ion etching, as another etching method, relative to dielectric layer B for dielectric layer A is 0.2. Figure 4 Component 100 is an optoelectronic component, more specifically, a photodetector according to Example 2 above.

[0787] Figure 5 A cross-sectional schematic diagram of another component 100 according to the present invention is shown. Figure 1 The description also applies to Figure 5 ,only Figure 5 The first conductor layer 108 of the component does not include the third region 115. Furthermore, Figure 5The layer sequence of component 100 further includes another electrical conductor layer 501. This other electrical conductor layer 501 is fully embedded in the dielectric layer B 104 at another distance 504 from the optical element layer 105. Here, the first distance 116 is 10 nm and the other distance 504 is approximately 20 nm. In a view in the first direction 109, the first region 110 of the first electrical conductor layer 108, the first region 502 of the other electrical conductor layer 501, and the first region 111 of the optical element layer 105 overlap each other. Here, the first region 110 of the first electrical conductor layer 108 overlaps the entire surface of the first side 101 of the optical element layer 105 facing the component 100. Still in a view in the first direction 109, the first region 502 of the other electrical conductor layer 501 also overlaps the entire surface of the first side 101 of the optical element layer 105 facing the component 100. In the view still in the first direction 109, the second region 114 of the first electrical conductor layer 108 does not overlap with either the other electrical conductor layer 501 or the optical element layer 105. The other electrical conductor layer 501 also includes a second region 503. Again, in the view in the first direction 109, the second region 503 of the other electrical conductor layer 501 does not overlap with either the first electrical conductor layer 108 or the optical element layer 105. Figure 5 Component 100 further includes another electrical connector 301. This other electrical connector 301 extends from the first surface 112 of dielectric layer A 103, through dielectric layer A 103, partially through dielectric layer B 104, and is electrically connected to a second region 503 of another electrical conductor layer 501. The other electrical connector 301 is connected to the surface of the other electrical conductor layer 501 facing the first side 101 of component 100. Each of the first electrical connector 113 and the other electrical connector 301 is a via obtained by filling vias with a titanium liner and tungsten filler. The vias are circular in cross-section and each has a diameter of 500 nm. Dielectric layer A 103 is composed of SiO2 and has a layer thickness of 30 nm. Dielectric layer B 104 is composed of Al2O3 and has a layer thickness of approximately 40 nm. Dielectric layer C 106 is composed of SiO2 and has a layer thickness of 3,500 nm. Optical element layer 105 is a waveguide composed of SiN. The optical element layer 105 has a layer thickness of 350 nm. Each of the first electrical conductor layer 108 and the other electrical conductor layer 501 is a graphene sheet, which is a single-atom carbon layer thickness, i.e., has a thickness of less than 1 nm. The selectivity of reactive ion etching, as a first etching method, relative to dielectric layer B relative to dielectric layer A is 50. The selectivity of atomic layer etching, as another etching method, relative to dielectric layer B relative to dielectric layer A is 0.1. Figure 5 Component 100 is an optoelectronic component, or more specifically, a modulator according to Example 3 above.

[0788] Figure 6 A cross-sectional schematic diagram of another component 100 according to the present invention is shown. Figure 6 Component 100 and Figure 5 The components are identical to 100, except that the first electrical connector 113 is not connected to the surface of the first electrical conductor layer 108 facing the first side 101 of the component 100, and the other electrical connector 301 is not connected to the surface of the other electrical conductor layer 301 facing the first side 101 of the component 100. Specifically, the first electrical conductor layer 108 extends in the first direction 109 through a second region 114 of the first electrical conductor layer 108 and is thereby electrically connected to the first electrical conductor layer 108. The other electrical conductor layer 301 extends in the first direction 109 through a second region 503 of the other electrical conductor layer 501 and is thereby electrically connected to the other electrical conductor layer 501. Figure 6 Component 100 is an optoelectronic component, more specifically, the modulator according to Example 4 above. Here, the selectivity of reactive ion etching, as the first etching method, relative to dielectric layer B relative to dielectric layer A is 50. The selectivity of reactive ion etching, as another etching method, relative to dielectric layer B relative to dielectric layer A is 0.2.

[0789] Figure 7 A flowchart illustrating a method 700 according to the present invention is shown. In method step A.701, a component precursor 800 is provided. This component precursor 800 includes a layer sequence comprising dielectric layer A 103, dielectric layer B 104, and optical element layer 105 stacked one on top of the other in a given order from a first side 801 of the component precursor 800 to an opposite side 802 of the component precursor 800 opposite to the first side 801. Dielectric layer A 103 is less resistant to a first etching method than dielectric layer B 104, and dielectric layer B 104 is less resistant to another etching method than dielectric layer A 103. The layer sequence further includes a first electrical conductor layer 108. In a view in a first direction 109 from the first side 801 to the opposite side 802, a first region 110 of the first electrical conductor layer 108 and a first region 111 of the optical element layer 105 overlap each other. A first surface 112 of dielectric layer A 103 faces away from dielectric layer B 104. A first via 803 extends from the first layer surface 112 of dielectric layer A 103 through dielectric layer A 103. In method step B.702, the first via 803 is extended at least into the first electrical conductor layer 108 by another etching method. In method step C.703, the first via 803 is filled or coated with a first conductive material 1001 to obtain a first electrical connector 113, which extends from the first layer surface 112 of dielectric layer A 103 through dielectric layer A 103 and partially through dielectric layer B 104 and is electrically connected to the first electrical conductor layer 108.

[0790] Figure 8A schematic cross-sectional view of the component precursor 800 provided in step A.701 of the method 700 according to the present invention is shown. The component precursor 800 is Figure 1 The precursor of component 100 is thus included. Therefore, the precursor 800 comprises a sequence of layers including a dielectric layer A 103, a dielectric layer B 104 embedded therein of a first electrical conductor layer 108, and an embedded optical element layer 107 formed by a dielectric layer C 106 and an optical element layer 105. The dielectric layers A 103, B 104, and 107 are stacked vertically on top of each other in a given order from a first side 801 of the precursor 800 to the opposite side 802 of the precursor 800. A first via 803 extends from the first surface 112 of the dielectric layer A 103 through the dielectric layer A 103.

[0791] Figure 9 Show about Figure 8 A diagram illustrating step B.702 of the mentioned method 700. In method step B.702, the first via 803 is made to extend partially through the dielectric layer B 104 to the surface of the first electrical conductor layer 108 facing the first side 801. For this purpose, another etching method is used.

[0792] Figure 10 Show about Figure 8 and 9 A diagram illustrating step C.703 of the mentioned method 700. In method step C.703, the first via 803 is filled with a first conductive material 1001. Removing excess conductive material from the first surface 112 of dielectric layer A 103 results in the first electrical connection 113 being... Figure 1 The first electrical connector 113 of component 100 extends from the first layer surface 112 of dielectric layer A 103 through dielectric layer A 103 and partially through dielectric layer B 104 and is electrically connected to the surface of the first electrical conductor layer 108 facing the first side 801.

[0793] Figure 11 A schematic cross-sectional view of the component precursor 800 provided in step A.701 of the method 700 according to the present invention is shown. The component precursor 800 is Figure 2The precursor of component 100 is thus included. Therefore, the precursor 800 comprises a sequence of layers including a dielectric layer A 103, a dielectric layer B 104 embedded therein of a first electrical conductor layer 108, and an embedded optical element layer 107 formed by a dielectric layer C 106 and an optical element layer 105. The dielectric layers A 103, B 104, and 107 are stacked vertically on top of each other in a given order from a first side 801 of the precursor 800 to the opposite side 802 of the precursor 800. A first via 803 extends from the first surface 112 of the dielectric layer A 103 through the dielectric layer A 103.

[0794] Figure 12 Show about Figure 11 A diagram of step B.702 of the mentioned method 700. In method step B.702, the first via 803 is made to extend partially through the dielectric layer B 104 and through the first electrical conductor layer 108. For this purpose, another etching method is used.

[0795] Figure 13 Show about Figure 11 and 12 A diagram illustrating step C.703 of the mentioned method 700. In method step C.703, the first via 803 is filled with a first conductive material 1001. Removing excess conductive material from the first surface 112 of dielectric layer A 103 results in the first electrical connection 113 being... Figure 2 In component 100, the first electrical connector 113 extends from the first layer surface 112 of dielectric layer A 103 through dielectric layer A 103, partially through dielectric layer B 104 and through first electrical conductor layer 108 and is thereby electrically connected to first electrical conductor layer 108.

[0796] Figures 14a) to 14f) The illustration shows steps A]1401 to F]1405 of the method 700 according to the present invention. This method 700 can be related to... Figures 8 to 10 The method mentioned 700 or about Figures 11 to 13 The method mentioned is 700. Figure 14a Showing information from Figure 8 Alternatively, component precursor 800 of 11, in each case without first through hole 803. Figure 14b The result of method step A]1401 is shown. A photoresist layer 1406 is applied to dielectric layer A103 on the side opposite to dielectric layer B104. Figure 14c [Explanation of method step B] 1402. Place a mask 1407 with an opening 1408 on the photoresist layer 1406. Irradiate an area of ​​the photoresist layer 1406 with ultraviolet radiation 1409 through the opening 1408. Figure 14dThe result of method step C]1403 is shown. The photoresist layer 1406 is developed. This means that a region of the photoresist layer 1406 is removed. This yields the first auxiliary via 1410 in the photoresist layer 1406. Figure 14e (Explanation of method steps D] 1404. The first etchant 1411 is introduced into the first auxiliary via 1410 and the first via 803 is formed in the dielectric layer A 103. Figure 14f The results of method step E]1405 are shown. The photoresist layer 1406 is removed to obtain... Figure 8 Or component precursor 800 in 11.

[0797] Figure 15 A schematic diagram of an electronic device 1500 according to the present invention is shown. The electronic device 1500 includes... Figure 4 The components 100, the first integrated circuit 1501, and the other integrated circuit 1502 are arranged and adapted to communicate with each other via waveguide 1503 and component 100.

[0798] Figures 16a) to 16f) The illustration shows a method for producing components, wherein neither the method nor the components are provided in accordance with the present invention. Figure 16a The component precursor is shown in the cross-section of [image / image]. This component precursor comprises a layer sequence consisting of Al2O3 layer 1601 and SiO2 layer 1602 stacked one on top of the other. A SiN waveguide is partially embedded in the SiO2 layer 1602. The layer sequence further includes a graphene sheet 1604, which is completely embedded in the Al2O3 layer 1601. Figure 16b This demonstrates the application of photoresist layer 1406 to Al2O3 layer 1601. Figure 16c In this process, a mask 1407 with an opening 1408 is placed on a photoresist layer 1406. Through the opening 1408, ultraviolet radiation 1409 irradiates areas of the photoresist layer 1406. This causes the photoresist layer 1406 to develop, i.e., areas of the photoresist layer 1406 are removed. This creates vias 1605 in the photoresist, such as... Figure 16d As explained in ().

[0799] like Figure 16e As described in [the document], etchant 1606 is introduced into via 1605 to etch via 1607 into Al2O3 layer 1601. This via 1607 extends into... Figure 16e The surface of the graphene sheet 1604, with the middle side facing upwards, is then treated. The remaining portion of the photoresist layer 1406 is removed using oxygen plasma and rinsed with acetone to obtain the desired result. Figure 16fIn the case described above, vias 1607 are filled with a titanium substrate via PVD, followed by tungsten 1608 metal filler via CVD. After photolithographic contact definition, excess tungsten 1608 on the Al2O3 layer 1601 is removed by dry etching to obtain vias 1609. Figure 16h Components in ).

[0800] Figures 17a) to 17h) An illustration shows another method for producing components, wherein neither the method nor the components are based on the present invention. This method is similar to... Figures 16a) to 16h) The method described is the same, except that the through-hole 1607 is not etched to stop at the upward-facing surface of the graphene sheet 1604, but is etched through the graphene sheet 1604, as shown in the example. Figure 17e As shown in ), therefore, in Figure 17h In the graphene sheet 1604, pathway 1609 also extends through the graphene sheet 1604.

[0801] Component Symbol List

[0802] 100 Components according to the invention

[0803] The first side of component 101

[0804] The other side of component 102

[0805] 103 Dielectric layer A

[0806] 104 Dielectric Layer B

[0807] 105 Optical Component Layer

[0808] 106 dielectric layer C

[0809] 107 Embedded Optical Component Layer

[0810] 108 First electrical conductor layer

[0811] 109 First Direction

[0812] 110 First region of the first electrical conductor layer

[0813] 111 First region of the optical element layer

[0814] 112 The first surface of dielectric layer A

[0815] 113 First electrical connection

[0816] 114 Second region of the first electrical conductor layer

[0817] 115 Third region of the first electrical conductor layer

[0818] 116 First Distance

[0819] 301 Another electrical connection

[0820] 501 Another conductive layer

[0821] 502 The first region of another electrical conductor layer

[0822] 503 The second region of another electrical conductor layer

[0823] 504 Another distance

[0824] 700 The method according to the present invention

[0825] 701 Method Step A.

[0826] 702 Method Step B.

[0827] 703 Method Step C.

[0828] 800 component precursor

[0829] The first side of the 801 component precursor

[0830] The other side of the 802 component precursor

[0831] 803 First Through Hole

[0832] 1001 First Conductive Material

[0833] 1401 Method and Steps A]

[0834] 1402 Method and Steps B]

[0835] 1403 Method and Steps C]

[0836] 1404 Method and Steps D]

[0837] 1405 Method and Steps E]

[0838] 1406 Photoresist Layer

[0839] 1407 Mask

[0840] 1408 Opening

[0841] 1409 Ultraviolet Radiation

[0842] 1410 First Auxiliary Through Hole

[0843] 1411 First Etching Agent

[0844] 1500 Electronic device according to the present invention

[0845] 1501 First Integrated Circuit

[0846] 1502 Another integrated circuit

[0847] 1503 Waveguide

[0848] 1601 Al2O3 layer

[0849] 1602 SiO2 layer

[0850] 1603 SiN waveguide

[0851] 1604 Graphene Sheet

[0852] Through holes in 1605 photoresist

[0853] 1606 Etching Agent

[0854] Through holes in the 1607 SiO2 layer

[0855] 1608 Tungsten

[0856] 1609 Passage

[0857] 2000 First Assembly

[0858] 2001 First Subassembly

[0859] 2002 First Component

[0860] 2003 Second Component

[0861] 2004 First Integrated Circuit

[0862] 2005 First Data Storage Component

[0863] 2006 First Light-Emitting Component

[0864] 2007 Another sub-assembly

[0865] Another component in 2008

[0866] 2009 Another component

[0867] 2010 Another integrated circuit

[0868] 2011 Another data storage component

[0869] Another light-emitting component in 2012

[0870] 2100 Optical Sensing Module

[0871] 2101 First Component

[0872] 2102 Target Area

[0873] 2103 Sensing Components

[0874] 2104 Optical Devices

[0875] 2105 Integrated Circuits

[0876] 2106 Light-emitting components

[0877] 2200 Equipment adapted and deployed for medical applications

[0878] 2201 First Component

[0879] 2202 Another component

[0880] 2203 First Light-Emitting Component

[0881] 2204 First Integrated Circuit

[0882] 2205 Sensing Unit

[0883] 2300 Vehicles adapted and deployed for flight

[0884] 2301 First Component

[0885] 2302 First Light-Emitting Component

[0886] 2303 Another component

[0887] 2304 First Integrated Circuit

[0888] 2305 Propulsion Component

[0889] 2306 Components used to generate lift

[0890] 2307 Control System

[0891] 2308 Sensing Unit

[0892] 2400 Robot System

[0893] 2401 First Component

[0894] 2402 Light-emitting component

[0895] 2403 Another component

[0896] 2404 First Integrated Circuit

[0897] 2405 Robot Body

[0898] 2406 sensing unit

[0899] 2407 Control Module

[0900] 2408 External Entity

[0901] 2500 Second assembly adapted and arranged for optical calculations

[0902] 2501 Optical Memory Unit

[0903] 2502 Optical Processor

[0904] 2503 Data Communication Module

[0905] 2504 component

[0906] 2600 Third Assembly Component

[0907] 2601 Homomorphic Operation Module

[0908] 2602 Photon Encryption Module

[0909] 2603 Photon Decryption Module

[0910] 2604 component

[0911] 2606 Light-emitting component

[0912] 2700 Optical Connection Module

[0913] 2701 First Component

[0914] 2702 Another component

[0915] 2703 Waveguide

[0916] 2704 Light-emitting components

[0917] 2705 ​​Integrated Circuit

[0918] 2800 First transport component

[0919] 2801 First Component

[0920] 2802 Another component

[0921] 2803 Sensing Unit

[0922] 2804 Processing Module

[0923] 2805 Perception Submodule

[0924] 2806 generates submodules

[0925] 2807 Human-Machine Interface

[0926] 2808 Control Unit

[0927] 2809 Steering Components

[0928] 2810 Propulsion Component

[0929] 2811 First Integrated Circuit

[0930] 2812 First Light-Emitting Component

[0931] 2900 Another transport component

[0932] 2901 First Component

[0933] 2902 Another component

[0934] 2903 Steering Components

[0935] 2904 Propulsion Component

[0936] 3000 Fourth Assembly Component

[0937] 3001 memory unit

[0938] 3002 processor

[0939] 3003 component

[0940] 3100 Optical Data Communication Module

[0941] 3101 First Component

[0942] 3102 Light-emitting component

[0943] 3103 Another component

[0944] 3104 Integrated Circuits.

Claims

1. A component (100) comprising a layer sequence, the layer sequence comprising at least the following layers stacked one on top of the other in a given order from a first side (101) of the component (100) to an opposite side (102) of the component (100) opposite to the first side (101): a. Dielectric layer A (103), b. Dielectric layer B (104), and c. Optical element layer (105); The layer sequence further includes a first electrical conductor layer (108); In a view along a first direction (109) from the first side (101) to the other side (102), at least a first region (110) of the first electrical conductor layer (108) and at least a first region (111) of the optical element layer (105) overlap each other; The first surface (112) of the dielectric layer A (103) faces away from the dielectric layer B (104); The first electrical connector (113) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and is electrically connected to the first electrical conductor layer (108); The dielectric layer A (103) is less resistant to the first etching method than the dielectric layer B (104), and the dielectric layer B (104) is less resistant to the other etching method than the dielectric layer A (103).

2. The component (100) according to claim 1, wherein at least one of the following is applicable: a| The selectivity of the first etching method relative to the dielectric layer B (104) for the dielectric layer A (103) is greater than 1; b| The selectivity of the first etching method relative to dielectric layer A (103) for dielectric layer B (104) is less than 1; c| The selectivity of the other etching method relative to dielectric layer B (104) for dielectric layer A (103) is less than 1; d| The selectivity of the other etching method relative to dielectric layer A (103) for dielectric layer B (104) is greater than 1.

3. The component (100) according to claim 1 or 2, wherein the first electrical conductor layer (108) has a layer thickness of less than 1 μm.

4. The component (100) according to any of the preceding claims, wherein another electrical connector (301) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and is electrically connected to the first electrical conductor layer (108).

5. The component (100) according to any of the preceding claims, wherein the layer sequence further comprises another electrically conductive layer (501); In the view along the first direction (109), at least the first region (110) of the first electrical conductor layer (108), at least the first region (502) of the other electrical conductor layer (501), and at least the first region (111) of the optical element layer (105) overlap each other. Another electrical connector (301) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and is electrically connected to the other electrical conductor layer (501).

6. The component (100) according to any of the preceding claims, wherein the first electrical conductor layer (108) is at least partially embedded in the dielectric layer B (104) at a first distance (116) from the optical element layer (105).

7. The component (100) according to claim 6, wherein the other electrical conductor layer (501) is at least partially embedded in the dielectric layer B (104) at another distance (504) from the optical element layer (105); The first distance (116) is greater than the other distance (504).

8. The component (100) according to any of the preceding claims, wherein the optical element layer (105) is at least partially embedded in the dielectric layer C (106); The dielectric layer C (106) is a layer of the layer sequence and follows the dielectric layer B (104) in the first direction (109).

9. The component (100) according to any one of the preceding claims, wherein at least one of the following applies: a] The first electrical conductor layer (108) includes a second region (114) which, in the view in the first direction (109), does not overlap with the other electrical conductor layer (501), or with the optical element layer (105), or with either of them; b] The first electrical conductor layer (108) includes a third region (115) which, in the view in the first direction (109), does not overlap with the other electrical conductor layer (501), or with the optical element layer (105), or with either of them. c] In the view in the first direction (109), the first region (110) of the first electrical conductor layer (108) overlaps with the optical element layer (105) on the entire surface of the optical element layer (105) on the first side (101) facing the assembly (100). d] The other electrical conductor layer (501) includes a second region (503) that, in the view in the first direction (109), does not overlap with the first electrical conductor layer (108), or with the optical element layer (105), or with either of them; [e] In the view in the first direction (109), the first region (502) of the other electrical conductor layer (501) overlaps with the optical element layer (105) on the entire surface of the optical element layer (105) on the first side (101) facing the assembly (100).

10. The component (100) according to claim 9, wherein one or both of the following are applicable: a# The first electrical connector (113) is electrically connected to the second region (114) of the first electrical conductor layer (108); b# The other electrical connector (301) is electrically connected to the third region (115) of the first electrical conductor layer (108); The other electrical connector (301) is electrically connected to the second region (503) of the other electrical conductor layer (501).

11. The component (100) according to any of the preceding claims, wherein one or both of the following are applicable: a~ The first electrical connector (113) is connected to the surface of the first electrical conductor layer (108) facing the first side (101) of the assembly (100); b~ The other electrical connector (301) is connected to the surface of the first electrical conductor layer (108) facing the first side (101) of the assembly (100); c~ The other electrical connector (301) is connected to the surface of the other electrical conductor layer (501) facing the first side (101) of the assembly (100); d~ The first electrical connector (113) extends through the first electrical conductor layer (108) in the first direction (109); e~ The other electrical connector (301) extends through the first electrical conductor layer (108) in the first direction (109); f~ The other electrical connector (301) extends through the other electrical conductor layer (501) in the first direction (109).

12. The component (100) according to any of the preceding claims, wherein the first electrical conductor layer (108) or the other electrical conductor layer (501) or each of the two is a graphene sheet.

13. The component (100) according to any of the preceding claims, wherein the optical element layer (105) is selected from the group consisting of waveguides, gratings, prisms, lenses and couplers or combinations thereof.

14. A method (700) comprising method steps in the following order: A. A component precursor (800) is provided, comprising a layer sequence comprising at least the following layers stacked one on top of the other in a given order from a first side (801) of the component precursor (800) to an opposite side (802) of the component precursor (800) opposite to the first side (801): I. Dielectric layer A (103), II. Dielectric layer B (104), and III. Optical element layer (105); The dielectric layer A (103) is less resistant to the first etching method than the dielectric layer B (104), and the dielectric layer B (104) is less resistant to the other etching method than the dielectric layer A (103); The layer sequence further includes a first electrical conductor layer (108); In a view along a first direction (109) from the first side (801) to the other side (802), at least a first region (110) of the first electrical conductor layer (108) and at least a first region (111) of the optical element layer (105) overlap each other; The first surface (112) of the dielectric layer A (103) faces away from the dielectric layer B (104); The first via (803) extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103); B. By means of the other etching method, the first via (803) extends at least to the first electrical conductor layer (108); and C. Introduce a first conductive material (1001) into the first via (803) to obtain a first electrical connector (113) that extends from the first layer surface (112) of the dielectric layer A (103) through the dielectric layer A (103) and at least partially through the dielectric layer B (104) and is electrically connected to the first electrical conductor layer (108).

15. The method (700) according to claim 14, wherein step A of the method comprises forming the first via (803) in dielectric layer A (103) by the first etching method.

16. An electronic device (1500) comprising a component (100) according to any one of claims 1 to 13 or a component (100) obtainable by the method (700) according to claim 14 or 15.

17. Use of a component (100) according to any one of claims 1 to 13 or a component (100) obtainable by the method (700) according to claim 14 or 15 for the manufacture of an electronic device (1500).

18. A component (100) according to any one of claims 1 to 13, or a component (100) obtainable by the method according to claim 14 or 15, for use in the following: a_ Establish communication between the first integrated circuit (1501) and another integrated circuit (1501); b_ Establish communication between a first part of the integrated circuit and another part of the integrated circuit; or c_ Injects optical vectors into the optical network and / or reads out optical vectors from the optical network.

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