Dynamic switchable broadband terahertz wave absorber based on vanadium dioxide
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUILIN UNIV OF ELECTRONIC TECH
- Filing Date
- 2026-03-10
- Publication Date
- 2026-04-28
AI Technical Summary
Existing terahertz absorbers have limited absorption bandwidth, fixed functions, and poor stability under complex polarization and oblique incidence conditions, making it difficult to meet the needs of practical applications.
A dynamic switchable broadband terahertz absorber based on vanadium dioxide is designed. Utilizing the reversible phase transition characteristics of vanadium dioxide from insulator to metal, the absorption performance of the absorber is dynamically controlled through temperature regulation. The absorber adopts a multi-layer structure with periodically arranged units, including a patterned vanadium dioxide resonant layer, a photonic crystal plate dielectric layer, and a metal reflective layer. The structure is simple and insensitive to polarization direction.
It achieves ultra-wideband high-efficiency absorption in the mid-to-high frequency terahertz band, with dynamic switchable absorption rate, polarization insensitivity, good stability at oblique incidence, simple structure, and high fabrication feasibility. It is suitable for fields such as terahertz imaging, high-speed communication, and radar stealth.
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