Dynamic switchable broadband terahertz wave absorber based on vanadium dioxide

CN121939149APending Publication Date: 2026-04-28GUILIN UNIV OF ELECTRONIC TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUILIN UNIV OF ELECTRONIC TECH
Filing Date
2026-03-10
Publication Date
2026-04-28

AI Technical Summary

Technical Problem

Existing terahertz absorbers have limited absorption bandwidth, fixed functions, and poor stability under complex polarization and oblique incidence conditions, making it difficult to meet the needs of practical applications.

Method used

A dynamic switchable broadband terahertz absorber based on vanadium dioxide is designed. Utilizing the reversible phase transition characteristics of vanadium dioxide from insulator to metal, the absorption performance of the absorber is dynamically controlled through temperature regulation. The absorber adopts a multi-layer structure with periodically arranged units, including a patterned vanadium dioxide resonant layer, a photonic crystal plate dielectric layer, and a metal reflective layer. The structure is simple and insensitive to polarization direction.

Benefits of technology

It achieves ultra-wideband high-efficiency absorption in the mid-to-high frequency terahertz band, with dynamic switchable absorption rate, polarization insensitivity, good stability at oblique incidence, simple structure, and high fabrication feasibility. It is suitable for fields such as terahertz imaging, high-speed communication, and radar stealth.

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Abstract

The invention relates to the technical field of terahertz metamaterial devices, in particular to a dynamic switchable broadband terahertz wave absorber based on vanadium dioxide. The insulator-metal reversible phase change characteristic of vanadium dioxide is utilized to realize effective regulation and control of the conductivity; through the innovative design of the top layer resonance pattern, the wave absorber achieves efficient wave absorption with the average absorption rate exceeding 90% at the frequency band of 5.9-12.4 THz in the vanadium dioxide metallic state, the absorption bandwidth is 6.5 THz, and the relative bandwidth is 71.6%. The wave absorber has quadruple rotational symmetry, polarization insensitivity and excellent oblique incidence stability, and the absorptivity of TE polarized waves within the incidence angle range of 0-60 degrees and the absorptivity of TM polarized waves within the incidence angle range of 0-40 degrees are both maintained to be 80% or above; the average absorptivity of vanadium dioxide in an insulation state is lower than 1%, and a dynamic switch with a wave absorbing function is realized. The device is simple in structure, high in design robustness and high in preparation feasibility, and can be widely applied to the fields of terahertz imaging systems, high-speed communication electromagnetic compatibility shielding, high-performance radar stealth technologies and the like.
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