Immersed plasma energy and dose testing device

Abstract

The invention discloses an immersed plasma energy and dose testing device, and relates to the field of semiconductor plasma injection process, in the device, a grid group and a first collector are sequentially arranged in an energy collection device at intervals, the grid group comprises N grids, and a voltage supply module provides corresponding target bias voltage for the grid group; forming a grading energy screening electric field; the first collector collects the screened plasma and converts and outputs a first electric signal; a second collector in the dose collection device collects the total number of plasmas in the device and outputs a second electric signal; and the conversion module gates one path of electric signal at any moment and converts and outputs a target voltage signal to the control module so as to determine the energy distribution and dose distribution of the plasma. According to the scheme, energy testing and dosage testing can be carried out at the same time, it is guaranteed that the ion energy distribution condition and the dosage uniformity condition are accurately monitored in the one-time plasma injection process, and wafer modification errors are reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor plasma injection technology, and in particular to an immersion plasma energy and dose testing device. Background Technology

[0002] In plasma processing, ion energy and dosage are key parameters affecting the process effect, determining the degree of material surface modification, film quality, and performance. In semiconductor fabrication, plasma, through immersion implantation, bombards the wafer surface under high radio frequency voltage, forming a thin etched layer to alter the wafer material's surface properties. However, the etch effect varies depending on the plasma's energy. Furthermore, deviations in the gas generator during immersion implantation can lead to variations in the amount of plasma injected, resulting in inconsistent uniformity on the wafer surface and consequently, performance differences between wafers. In etching processes, key parameters such as etching rate, anisotropy, and selectivity are determined by the energy and dosage of the ions involved in the etching. Therefore, providing a technical solution for effectively testing ion energy and dosage during plasma immersion implantation is a pressing technical challenge. Summary of the Invention

[0003] In view of this, the present invention provides an immersion plasma energy and dose testing device, which can ensure real-time and accurate monitoring of the energy distribution and dose uniformity of the injected ions during a single plasma injection process, thereby facilitating a more precise understanding of the effect of plasma injection and the degree and effect of its impact on wafer performance.

[0004] To address the aforementioned technical problems, this application provides an immersion plasma energy and dose testing device, comprising a collection device placed inside a plasma immersion injection space, and a conversion module, a control module, and a voltage supply module placed outside the space. The collection device is set at the target location within the space. The collection device has M sub-collection devices inside, including A energy collection devices and B dose collection devices, where A and B are both integers not less than 1, and M = A + B. The energy harvesting device contains a grid group and a first collecting electrode arranged sequentially at intervals along the incident direction of the plasma. The grid group includes N grids arranged sequentially at intervals along the incident direction. The N grids are connected to the voltage supply module, and the output terminal of the first collecting electrode is connected to the conversion module. The voltage supply module provides a corresponding target bias voltage to the N grids so that the N grids form a graded energy screening electric field to screen the incident plasma. The first collecting electrode collects the first ion signal corresponding to the plasma that has passed through the N grids and converts it into a first electrical signal for output. N is an integer greater than 1. The dose collection device is internally provided with a second collecting electrode, the output of which is connected to the conversion module. The second collecting electrode is used to collect a second ion signal corresponding to the total number of plasmas in the dose collection device and convert it into a second electrical signal before outputting it. The conversion module is connected to the control module and is used to select one electrical signal under the collection device at any time under the control of the control module, and convert the electrical signal to obtain a target voltage signal and send it to the control module, so that the control module can determine the energy distribution of the plasma based on the target voltage signal corresponding to the energy collection device, and determine the dose distribution of the plasma based on the target voltage signal corresponding to the dose collection device.

[0005] Furthermore, the conversion module includes a multiplexing module and a signal conditioning module; The control terminal of the multiplexing module is connected to the control module. The first input terminal of the A channel is connected to the output terminals of the A first collectors one by one, and the second input terminal of the B channel is connected to the output terminals of the B second collectors one by one. The output terminal is connected to the input terminal of the signal conditioning module. Under the control of the control module, the module selects and outputs the voltage signal input at any input terminal of the module at any time. The output terminal of the signal conditioning module is connected to the control module, and the control terminal is connected to the control module. Under the control of the control module, the module converts the voltage signal it receives to obtain a target voltage signal that meets the preset input signal requirements of the control module.

[0006] Furthermore, the signal conditioning module includes an amplifier circuit group, which includes at least one amplifier circuit. When there are multiple amplifier circuits, each amplifier circuit is connected in sequence to amplify the voltage signal input to the signal conditioning module step by step.

[0007] Furthermore, the signal conditioning module also includes a filtering module; the amplifier circuit group is connected in sequence with the filtering module.

[0008] Furthermore, when the first phase of the voltage signal input to the amplifier circuit group shifts relative to the second phase, the signal conditioning module further includes a phase shifting module; wherein, the second phase is the phase of the voltage signal obtained after being amplified stage by the amplifier circuit group. The amplifier circuit group, the filter module, and the phase shifter module are connected in sequence; The phase-shifting module is used to perform phase-shifting processing on the voltage signal input to itself, so as to output a phase-shifted voltage signal, the phase of which is equal to the first phase.

[0009] Furthermore, M sub-collecting devices are disposed on the mounting plate inside the collecting device, and are uniformly and symmetrically distributed with the central axis of the mounting plate as the symmetry reference.

[0010] Furthermore, each of the grids is provided with a first collection hole array consisting of T first collection holes, the diameter of the first collection hole is less than a preset length, the preset length is twice the Debye length of the plasma, and T is an integer greater than 1; Each of the first acquisition holes under the grid is set in a one-to-one correspondence, and the central axes of the first acquisition holes at corresponding positions coincide.

[0011] Furthermore, a first shielding structure is provided around the collection device. The first shielding structure includes a first shielding cover and a first shielding shell, and the first shielding shell is grounded. M inlet ports are provided on the first shielding cover. The i-th inlet port is correspondingly provided with the i-th sub-collection device and their central axes coincide. The size parameters of the i-th inlet port and the collection opening at the top of the i-th sub-collection device are the same, where 1≤i≤M and i is an integer. Each of the sub-collection devices is surrounded by a second shielding structure, which includes a second shielding cover and a second shielding shell. The second shielding cover is provided with a second collection hole array consisting of second collection holes, the diameter of which is the same as that of the first collection hole. On the second shielding cover corresponding to the energy collection device, each second collection hole is arranged in a one-to-one correspondence with the first collection hole, and the central axis of the second collection hole at the corresponding position coincides with that of the first collection hole.

[0012] Furthermore, an insulating layer is provided in the space between two adjacent grids and in the space between the last grid and the first collector electrode; The orthographic projection of the insulating layer on the mounting plane covers the orthographic projection of the grid on the mounting plane.

[0013] Furthermore, the grid group includes a first grid, a second grid, a third grid, and a fourth grid; The first grid is grounded; The voltage supply module is specifically used to provide a first negative voltage to the second grid, a first positive voltage to the third grid, and a second negative voltage to the fourth grid; wherein the second negative voltage is less than the first negative voltage.

[0014] Furthermore, the first collecting electrode is connected to the voltage supply module; The voltage supply module is also used to provide a third negative voltage to the first collector electrode, the third negative voltage being less than the second negative voltage.

[0015] Furthermore, the voltage supply module includes a boost module and a first negative voltage output module, a second negative voltage output module, and a third negative voltage output module based on a flyback negative voltage circuit; The boost module is connected to the third grid, the first negative pressure output module is connected to the second grid, the second negative pressure output module is connected to the fourth grid, and the third negative pressure output module is connected to the first collector.

[0016] Furthermore, the boost module includes a first inductor, a second inductor, a first controllable switch, and a second controllable switch; The first terminal of the first controllable switch is connected to one end of the first inductor and the positive output terminal of the first power supply, the second terminal is connected to one end of the second inductor and then grounded, and the control terminal is connected to the control module. The first end of the second controllable switch is connected to the other end of the first inductor, and the common terminal of the connection serves as the output terminal of the boost module; the second end is connected to the other end of the second inductor and the negative output terminal of the first power supply, and the control terminal is connected to the control module; wherein, the first controllable switch and the second controllable switch are used to not be turned on simultaneously under the control of the control module.

[0017] Furthermore, the flyback negative voltage circuit includes a transformer, a controller, a third controllable switch, a first feedback resistor, and a second feedback resistor; The first end of the primary winding of the transformer is connected to the enable input terminal of the second power supply and controller, and the second end is connected to the first end of the third controllable switch; the first end of the secondary winding of the transformer is connected to one end of the first feedback resistor, and the common terminal of the connection serves as the output terminal of the flyback negative voltage circuit; the second end is connected to one end of the second feedback resistor, and the common terminal of the connection is grounded; the first end of the primary winding and the second end of the secondary winding are terminals of the same name. The second terminal of the third controllable switch is grounded, and the control terminal is connected to the drive output terminal of the controller; The other end of the first feedback resistor is connected to the other end of the second feedback resistor, and the common terminal of the connection is connected to the feedback input terminal of the controller.

[0018] The beneficial effects of this invention are as follows: This application provides an immersion plasma energy and dose testing device. The device includes a collection device located inside a space and a conversion module, a control module, and a voltage supply module located outside the space. The collection device is positioned at a target location within the space. The collection device contains A energy collection devices and B dose collection devices. Inside the energy collection device, a grid group and a first collecting electrode are sequentially spaced along the incident direction of the plasma. The grid group includes N grids sequentially spaced along the incident direction, and the N grids are connected to the voltage supply module. The output terminal of the first collecting electrode is connected to the conversion module. The voltage supply module provides corresponding target bias voltages to the N grids, enabling the N grids to form a graded energy screening electric field to screen the incident plasma. The first collecting electrode is used to collect... The plasma, after being filtered through N grids, is collected, and the first ion signal corresponding to the collected result is converted into a first electrical signal. The dose collection device has a second collecting electrode inside, the output of which is connected to a conversion module. The second collecting electrode is used to collect the total number of plasma particles within the dose collection device and convert the second ion signal corresponding to the total number into a second electrical signal. The conversion module is connected to a control module and, under the control of the control module, selects one electrical signal from the collection device at any given time, converts the electrical signal to obtain a target voltage signal, and sends it to the control module. The control module then determines the plasma energy distribution based on the target voltage signal corresponding to the energy collection device and the plasma dose distribution based on the target voltage signal corresponding to the dose collection device. Therefore, this scheme can simultaneously perform energy and dose testing in a single test, ensuring accurate monitoring of the injected ion energy distribution and dose uniformity during a single plasma injection process. This facilitates a more precise understanding of the plasma injection effect and the degree and effect of its impact on wafer performance, reducing performance errors in wafer modification caused by inaccurate detection. It also meets the high control requirements of plasma processes and is beneficial for practical applications.

[0019] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application, it can be implemented according to the contents of the specification. In order to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0020] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 This is a schematic diagram of the structure of an immersion plasma energy and dose testing device provided by the present invention; Figure 2 A circuit structure diagram of a signal conditioning module provided by the present invention; Figure 3 A schematic diagram of the structure of a collection device provided by the present invention; Figure 4 A schematic diagram of the structure of an energy harvesting device provided by the present invention; Figure 5 A schematic diagram of a boost module provided by the present invention; Figure 6 This is a schematic diagram of a flyback negative voltage circuit provided by the present invention. Detailed Implementation

[0021] The core of this invention is to provide an immersion plasma energy and dose testing device that can accurately monitor the energy distribution and dose uniformity of the injected ions in real time during a single plasma injection process, which is beneficial for more precise control of the effect of plasma injection and the degree and effect of changes to wafer performance.

[0022] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0023] The terms "first," "second," etc., used in this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class, without limiting the number of objects; for example, a first object can be one or more. Furthermore, in this application, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects have an "or" relationship.

[0024] Please refer to Figure 1 , Figure 1 This is a schematic diagram of the structure of an immersion plasma energy and dose testing device provided by the present invention.

[0025] The immersion plasma energy and dose testing device includes a collection device 1 placed inside the plasma immersion injection space, and a conversion module 2, a control module 3, and a voltage supply module 4 placed outside the space. The collection device 1 is set at the target location in the space. The collection device 1 has M sub-collection devices inside, including A energy collection devices 11 and B dose collection devices 12, where A and B are both integers not less than 1, and M = A + B. The energy harvesting device 11 has a grid group and a first collecting electrode arranged sequentially at intervals along the incident direction of the plasma. The grid group includes N grids arranged sequentially at intervals along the incident direction. The N grids are connected to the voltage supply module 4, and the output terminal of the first collecting electrode is connected to the conversion module 2. The voltage supply module 4 is used to provide the corresponding target bias voltage to the N grids so that the N grids form a graded energy screening electric field to screen the incident plasma. The first collecting electrode is used to collect the first ion signal corresponding to the plasma that has passed through the N grids and convert it into a first electrical signal for output. N is an integer greater than 1. The dose collection device 12 is equipped with a second collecting electrode, and the output end of the second collecting electrode is connected to the conversion module 2. The second collecting electrode is used to collect the second ion signal corresponding to the total number of plasmas in the dose collection device 12, and convert it into a second electrical signal before outputting it. The conversion module 2 is connected to the control module 3 and is used to select one electrical signal under the collection device at any time under the control of the control module 3, and convert the electrical signal to obtain the target voltage signal and send it to the control module 3, so that the control module 3 can determine the energy distribution of the plasma based on the target voltage signal corresponding to the energy collection device 11, and determine the dose distribution of the plasma based on the target voltage signal corresponding to the dose collection device 12.

[0026] In this embodiment, the space for plasma immersion implantation can be a chamber. In practical applications, the wafer is also fabricated inside this space. Considering that during the plasma immersion implantation process, the ions are accelerated by the radio frequency field voltage, resulting in different energies when they bombard the wafer. During wafer etching, the different ion energies can lead to deviations in the etching effect, affecting the wafer's performance. Furthermore, during plasma immersion, the varying amount of gas introduced into the chamber will generate different concentrations of plasma. After acceleration by the radio frequency voltage, this will cause different areas and times of surface erosion on the wafer. Different plasma concentrations can lead to uneven etching on the wafer surface, ultimately preventing the wafer modification from achieving the desired effect. Especially in plasma etching processes, ion energy distribution and dose uniformity determine important parameters such as etching rate, selectivity, and anisotropy. Therefore, ion energy distribution and ion dose uniformity are key parameters for measuring, understanding, and controlling plasma to ensure optimal process performance. To this end, this application provides an immersion plasma energy and dose testing device that can test and determine the energy distribution and dose uniformity of the plasma in real time during a single deposition of the same plasma.

[0027] Specifically, the space includes an installation plane. During testing, the collection device can be placed at a target location on the installation plane. This target location can be the actual location where the wafer will be etched and placed. The size of the collection device can be set to match the size of the wafer to test and detect the plasma energy and dose distribution that the wafer can receive during plasma immersion injection in advance. Alternatively, the collection device can be placed directly above the wafer, without any particular limitation.

[0028] The collecting device 1 includes M sub-collecting devices, where M is an integer greater than 2. The M sub-collecting devices are mounted on a mounting plate inside the collecting device 1. A sub-collecting devices are selected as energy collecting devices 11 and the remaining B sub-collecting devices are selected as dose collecting devices 12. For example, if M=8, then A=4 and B=4 can be selected.

[0029] The overall structure of the collecting device 1 can be cylindrical, or in some embodiments, it can be ellipsoidal. The top of the collecting device 1 has a collection port corresponding to the incident direction, and the bottom end face is parallel to the plane where the collection port is located, so that the collecting device 1 presents a constricted-expansion cavity structure with a small opening and a large radial dimension in the middle. However, it should be noted that the collection port will not be too small, and the specific size parameters can be flexibly set according to the actual application. This structural setting helps to reduce the overflow of secondary electrons and increase the reliability of test data.

[0030] For the energy harvesting device 11, a grid group and a first collecting electrode are sequentially and spaced apart inside the device along the incident direction of the plasma, that is, in the direction extending from the top to the bottom of the energy harvesting device 11. The grid group includes N grids sequentially and spaced apart, such that there is a certain distance between the N grids and between the grid group and the first collecting electrode. It is understood that the specific distance value is not particularly limited here. Preferably, it is better to make the grids uniformly distributed inside the energy harvesting device 11. More specifically, an insulating layer can be provided at this distance. The specific setting method of the insulating layer is described in the following embodiments and will not be repeated here. The first collecting electrode is located at the bottom of the energy harvesting device 11, and the first collecting electrode can be a collection sensor. Each sub-collecting device and the collecting device itself can be provided with small holes for wires to pass through in order to realize the corresponding circuit connection. For example, the output end of the first collecting electrode can be led out of the space by wires passing through the small holes at the bottom of the energy harvesting device 11 and the small holes of the collecting device, and then connected to the input end of the conversion module 2 located outside the space. The voltage supply module 4 provides corresponding target bias voltages to N grids. Different grids have different target bias voltages to control energy harvesting, so that the N grids form a graded energy screening electric field to screen the incident plasma. That is, when plasma is injected into the immersion environment, it will be distinguished by energy level when passing through different grids. The first collector can collect the first ion signal corresponding to the plasma that has passed through the N grids and convert it into a first electrical signal for output. It should be noted that the first electrical signal can be a voltage signal, or, corresponding to the first collector as a collection sensor, its corresponding output first electrical signal is a first current signal. Therefore, a first sampling resistor needs to be set outside the space. That is, the output terminal of the o-th first collector is connected to one end of the o-th first sampling resistor and the o-th first input terminal of the conversion module 2, and the other end of the first sampling resistor is grounded. 1≤o≤A and o is an integer, so as to realize the conversion and sampling of current signal to voltage signal, thereby ensuring that the electrical signal received by the conversion module 2 is a voltage signal.

[0031] The dose collection device 12 has a second collecting electrode inside, which can be located at the bottom of the device and can serve as a collection sensor. In actual connection, the output of the second collecting electrode can be led out of the space through a wire passing through a small hole at the bottom of the dose collection device 12 and another small hole in the collecting device, and then connected to the input of the conversion module 2 located outside the space. The second collecting electrode is used to collect a second ion signal corresponding to the total number of plasmas within the dose collection device 12, and converts it into a second electrical signal before outputting it. It should be noted that the second electrical signal can be a voltage signal, or, corresponding to the second collecting electrode being a collection sensor, its output second electrical signal can be a second current signal. Therefore, a second sampling resistor needs to be set outside the space. The output of the p-th second collecting electrode is connected to one end of the p-th second sampling resistor and the p-th second input of the conversion module 2, while the other end of the second sampling resistor is grounded. 1 ≤ p ≤ B, and p is an integer, to achieve the conversion and sampling of the current signal to a voltage signal, thereby ensuring that the electrical signal received by the conversion module 2 is a voltage signal.

[0032] The conversion module 2 can select one electrical signal from the collection device at any time under the control of the control module 3. As for the specific selection rule, it can be that the control module 3 specifies the selection of the electrical signal corresponding to a certain energy collection device 11 or the electrical signal corresponding to a certain dose collection device 12, or it can be the electrical signal obtained by selecting each sub-collection device in a preset order, such as sequential or reverse order. No special limitation is made here. Since this gating is controlled by control module 3, meaning control module 3 knows whether the target voltage signal output by the current conversion module 2 corresponds to energy harvesting device 11 or dose harvesting device 12, control module 3 can determine the plasma energy distribution based on the target voltage signal corresponding to energy harvesting device 11. The specific determination method has been detailed in related technologies and will not be repeated here. Then, combining the energy distribution corresponding to A energy harvesting devices 11, the energy distribution range at different locations during plasma injection is determined. Similarly, the plasma dose distribution is determined based on the target voltage signal corresponding to dose harvesting device 12. The specific determination method has been detailed in related technologies and will not be repeated here. Then, combining the dose distribution corresponding to B dose harvesting devices 12, the dose uniformity is determined. Furthermore, the results of determining the energy distribution range and dose uniformity can be displayed in charts for technicians to intuitively understand the results.

[0033] It should also be noted that the control module 3 may include a controller. If the controller itself has ADC conversion function, the output of the signal conditioning module 22 can be directly given to the controller. If the controller itself does not have ADC conversion function, such as the controller being an FPGA (Field Programmable Gate Array), the control module 3 may specifically include an ADC module and a controller connected in sequence.

[0034] In summary, this application provides an immersion plasma energy and dose testing device that can perform energy and dose testing simultaneously in a single test. This ensures accurate and real-time monitoring of the injected ion energy distribution and dose uniformity during a single plasma injection process. This facilitates a more precise understanding of the plasma injection effect and the degree and effect of its impact on wafer performance, reduces performance errors in wafer modification caused by inaccurate detection, meets the high control requirements of plasma processes, and is beneficial for practical applications.

[0035] Based on the above embodiments: In some embodiments, the conversion module 2 includes a multiplexing module 21 and a signal conditioning module 22; The control terminal of the multiplexing module 21 is connected to the control module 3. The first input terminal of the A channel is connected to the output terminals of the A first collectors one by one, and the second input terminal of the B channel is connected to the output terminals of the B second collectors one by one. The output terminal is connected to the input terminal of the signal conditioning module 22. Under the control of the control module 3, it can select the voltage signal input at any input terminal of itself at any time for output. The output terminal of the signal conditioning module 22 is connected to the control module 3, and the control terminal is connected to the control module 3. It is used to convert the voltage signal it receives under the control of the control module 3 so as to obtain the target voltage signal that meets the preset input signal requirements of the control module 3.

[0036] Specifically, the multiplexing module 21 can be understood as an M-to-1 selection module, meaning it includes M input terminals and one output terminal. The M input terminals specifically include A first input terminals and B second input terminals. As described above, under the control of the control module 3, it can select and output the voltage signal input at any one of its input terminals at any given time. Here, "any one input terminal" refers to one of the A first input terminals or one of the B second input terminals. More specifically, the multiplexing module 21 can be an analog multiplexer. The control module 3 can control the selection between any input terminal and output terminal of the multiplexing module 21 using binary encoding to achieve signal switching. The multiplexing module 21 and the signal conditioning module 22 can receive and process voltage signals. Therefore, by setting the first and second sampling resistors in the above embodiment, it can be ensured that the signals received and output by the multiplexing module 21 and the signal conditioning module 22 are both voltage signals.

[0037] The signal conditioning module 22 is configured as described above to output the target voltage signal; the preset input signal requirements mentioned here can be understood as the requirements of the control module 3 for the input signal itself, and are specifically set according to the actual application.

[0038] In some embodiments, the signal conditioning module 22 includes an amplifier circuit group, which includes at least one amplifier circuit. When there are multiple amplifier circuits, each amplifier circuit is connected in sequence to amplify the voltage signal input to the signal conditioning module 22 step by step.

[0039] It should be noted that the above settings enable the voltage signal input to the signal conditioning module 22 to be amplified step by step to obtain a target voltage signal that meets the preset input signal requirements of the control module 3. Specifically, the number of amplification circuits used here can be flexibly set according to the voltage sampling accuracy requirements of the control module 3 and the actual application needs; in some embodiments, the amplification circuit group may include a first amplification circuit to achieve first-stage amplification, or may include a first amplification circuit and a second amplification circuit connected in sequence to achieve second-stage amplification.

[0040] To elaborate, please refer to Figure 2 , Figure 2 This is a schematic diagram of the circuit structure of a signal conditioning module provided by the present invention.

[0041] The first amplifier circuit 221 includes a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, and a first operational amplifier U1. One end of the first resistor R1 is grounded, and the other end is connected to one end of the second resistor R2 and the non-inverting input of the first operational amplifier U1. The common terminal of the connection serves as the input terminal of the signal conditioning module 22, which is used to connect to the output terminal of the multiplexing module 21. The other end of the second resistor R2 is connected to the third power supply VCC3. One end of the third resistor R3 is grounded, and the other end is connected to one end of the fourth resistor R4 and the inverting input of the first operational amplifier U1. The other end of the fourth resistor R4 is connected to the output terminal of the first operational amplifier U1. The common terminal of the connection serves as the output terminal of the signal conditioning module 22.

[0042] It should be noted that the third power supply VCC3 here is a DC power supply; such as Figure 2 As shown, the power supply terminal of the first operational amplifier U1 is connected to the third power supply VCC3, and the ground terminal is grounded; for example, the first operational amplifier U1 can be a high-precision OPA627P type operational amplifier; preferably, the first amplification circuit 221 can also include a first diode D1, the anode of the first diode D1 is connected to one end of the first resistor R1, and the cathode is connected to the other end of the first resistor R1 for current reverse protection; the first diode D1 can specifically be a Schottky diode.

[0043] The second amplifier circuit 222 includes a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, and a second operational amplifier U2. One end of the fifth resistor R5 is grounded, and the other end is connected to one end of the sixth resistor R6 and the non-inverting input terminal of the second operational amplifier U2. The other end of the sixth resistor R6 is connected to the fourth power supply VCC4. One end of the seventh resistor R7 is connected to the inverting input terminal of the second operational amplifier U2, and the common terminal of the connection is connected to the output terminal of the first operational amplifier U1. The other end is connected to the output terminal of the second operational amplifier U2, and the common terminal of the connection serves as the output terminal of the signal conditioning module 22.

[0044] Specifically, considering that using only the first amplifier circuit 221 for single-stage amplification may not meet the requirements in practical applications, a second amplifier circuit 222 can also be set for amplification; it should be noted that the fourth power supply VCC4 here is a DC power supply; such as Figure 2 As shown, the power supply terminal of the second operational amplifier U2 is connected to the fourth power supply VCC4, and the ground terminal is grounded; for example, the second operational amplifier U2 can be a high-precision LM358N type operational amplifier.

[0045] In some embodiments, the signal conditioning module 22 further includes a filtering module; the amplifier circuit group is connected to the filtering module in sequence.

[0046] In this embodiment, considering that the transmitting device is used to output the high radio frequency voltage described in the above embodiment, during the plasma immersion process, since the high radio frequency voltage usually contains noise, such as 13.56MHz noise, a filtering module needs to be set up to perform noise reduction filtering in order to reduce signal interference.

[0047] Specifically, the filtering module includes a first filtering module 224 and S second filtering modules 223; S is the total number of amplifier circuits minus 1; the s-th second filtering module 223 is located between the s-th amplifier circuit and the (s+1)-th amplifier circuit, 1≤s≤S and s is an integer; the input terminal of the first filtering module 224 is connected to the output terminal of the last amplifier circuit, and the output terminal serves as the output terminal of the signal conditioning module 22.

[0048] As can be seen, the above setup enables filtering between the various amplifier circuits, as well as filtering of the output of the last amplifier circuit. More specifically, the second filtering module 223 includes a first capacitor C1 and an eighth resistor R8 connected in sequence; as shown... Figure 2 As shown, the second filter module 223 is provided between the first amplifier circuit 221 and the second amplifier circuit 222.

[0049] The first filter module 224 includes a ninth resistor R9, a second capacitor C2, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a third capacitor C3, a fourth capacitor C4, and a third operational amplifier U3. One end of the ninth resistor R9 serves as the input terminal of the first filter module 224, and the other end is connected to one end of the tenth resistor R10 and one end of the second capacitor C2. The common terminal of the other end of the second capacitor C2, the output terminal of the third operational amplifier U3, and one end of the twelfth resistor R12 serves as the output terminal of the first filter module 224. The other end of the tenth resistor R10 is connected to one end of the third capacitor C3 and the non-inverting input terminal of the third operational amplifier U3. The other end of the third capacitor C3 is grounded. One end of the fourth capacitor C4 is grounded, and the other end is connected to one end of the eleventh resistor R11. The other end of the eleventh resistor R11 is connected to the other end of the twelfth resistor R12 and the inverting input terminal of the third operational amplifier U3.

[0050] It should be noted that the power supply terminal of the third operational amplifier U3 is connected to the fifth power supply VCC5, and the ground terminal is grounded. The fifth power supply VCC5 can be a DC power supply. For example, the third operational amplifier U3 can be an LM741N type operational amplifier.

[0051] It should also be noted that the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, and the eighth resistor R8 are resistors in a preset ratio, that is, the resistance value of the first resistor R1 : the resistance value of the second resistor R2 : the resistance value of the third resistor R3 : the resistance value of the fourth resistor R4 : the resistance value of the eighth resistor R8 = 1 : k : k 2 :k 3 :k 4 k represents the preset ratio, and there is no specific limitation on the specific value of the preset ratio. It can be set flexibly according to the actual application.

[0052] In some embodiments, when the first phase of the voltage signal input to the amplifier circuit group is offset relative to the second phase, the signal conditioning module 22 further includes a phase shifting module 225; wherein, the second phase is the phase of the voltage signal obtained after being amplified step by step by the amplifier circuit group; The amplifier circuit group, filter module, and phase shifter module 225 are connected in sequence; The phase-shifting module 225 is used to perform phase-shifting processing on the voltage signal input to itself, so as to output a phase-shifted voltage signal. The phase of the phase-shifted voltage signal is equal to the first phase.

[0053] In this embodiment, considering that the phase of the voltage signal after amplification by the amplifier circuit group may be shifted, such as when the second operational amplifier U2 is an LM358N type operational amplifier, this phase shift may occur. Therefore, the phase shift module 225 can be set to achieve phase correction. It can be understood that the phase shift module 225 does not change the amplitude of the voltage signal input to itself.

[0054] Specifically, the phase shift module 225 includes a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, and a fourth operational amplifier U4; one end of the thirteenth resistor R13 is connected to one end of the fourteenth resistor R14 and the non-inverting input of the fourth operational amplifier U4, and the other end is connected to the output of the fourth operational amplifier U4, with the common terminal serving as the output of the phase shift module 225; the other end of the fourteenth resistor R14 serves as the input of the phase shift module 225; one end of the fifteenth resistor R15 is connected to the inverting input of the fourth operational amplifier U4, and the other end is grounded.

[0055] It should be noted that the setting of the thirteenth resistor R13 establishes a feedback loop, allowing the phase shift module 225 to correct the phase deviation based on the ratios between the resistors in this module, such as phase shifts of 90 degrees or 180 degrees; for example... Figure 2As shown, the power supply terminal of the fourth operational amplifier U4 is connected to the sixth power supply VCC6, and the ground terminal is grounded. For example, the fourth operational amplifier U4 can be an ADA4062 type operational amplifier. The phase shifting module 225 can achieve controllable phase shifting without changing the amplitude of the input voltage signal.

[0056] As can be seen, relying on the specific settings of the signal conditioning module 22, the signal conditioning module 22 can realize the functions of first-stage amplification, second-stage amplification, filtering and phase shifting, ensuring that the target voltage signal output by the signal conditioning module 22 meets the input requirements of the control module 3, which is beneficial for subsequent data analysis.

[0057] Please refer to Figure 3 , Figure 3 This is a schematic diagram of a collection device provided by the present invention.

[0058] In some embodiments, M sub-collecting devices are disposed on the mounting plate 13 inside the collecting device, and are uniformly and symmetrically distributed with the central axis of the mounting plate 13 as the symmetry reference.

[0059] Specifically, the M sub-collecting devices can be arranged in a uniform and symmetrical distribution with the central axis of the mounting plate 13 as the symmetry reference, such as... Figure 3 As shown; Figure 3 The grid group 111 in the energy harvesting device 11 is marked with a grid; it should also be noted that the energy harvesting device 11 and the dose collection device 12 should be distributed as evenly as possible.

[0060] It is evident that the above settings help reduce testing errors caused by uneven distribution.

[0061] Please refer to Figure 4 , Figure 4 This is a schematic diagram of the structure of an energy harvesting device provided by the present invention.

[0062] In some embodiments, each grid is provided with a first collection hole array consisting of T first collection holes 116, the aperture of the first collection hole 116 is smaller than a preset length, the preset length is twice the Debye length of the plasma, and T is an integer greater than 1. Each of the first acquisition holes 116 under each grid is set in a one-to-one correspondence, and the central axes of the first acquisition holes 116 at the corresponding positions coincide.

[0063] It should be noted that all holes referred to in this application are through holes; the first collection hole 116 here is a sub-millimeter level collection hole. The first collection holes 116 can be evenly arranged on the grid to form a first collection hole array. The diameter of the first collection hole 116 is smaller than the preset length, which helps to minimize secondary ionization of the plasma entering the energy harvesting device 11. The first collection holes 116 under each grid are arranged one-to-one to form a T-shaped straight path for the plasma to pass through in the vertical direction.

[0064] like Figure 4 As shown, taking N=4, that is, the grid group specifically includes the first grid 112, the second grid 113, the third grid 114 and the fourth grid 115 as an example, it can be seen that each grid is provided with a first acquisition hole 116.

[0065] In some embodiments, a first shielding structure is provided around the collecting device. The first shielding structure includes a first shielding cover and a first shielding shell, and the first shielding shell is grounded. M inlet ports are provided on the first shielding cover. The i-th inlet port is correspondingly provided with the i-th sub-collecting device and their central axes coincide. The size parameters of the i-th inlet port and the collection opening at the top of the i-th sub-collecting device are the same, where 1≤i≤M and i is an integer. Each sub-collection device is surrounded by a second shielding structure, which includes a second shielding cover 51 and a second shielding shell 52. The second shielding cover 51 is provided with a second collection hole array consisting of second collection holes 53. The diameter of the second collection holes 53 is the same as the diameter of the first collection hole 116. On the second shielding cover 51 corresponding to the energy collection device 11, each second collection hole 53 is arranged in a one-to-one correspondence with the first collection hole 116, and the central axis of the corresponding second collection hole 53 coincides with that of the first collection hole 116.

[0066] Specifically, a first shielding cover is disposed on the top of the collecting device, and a first shielding shell is disposed on the periphery of the collecting device. The first shielding cover has M inlet ports, with the i-th inlet port corresponding to the i-th sub-collecting device and their central axes coinciding, ensuring complete positional correspondence. The size parameters of the i-th inlet port are consistent with the collection opening at the top of the i-th sub-collecting device. For example, if the sub-collecting device is cylindrical and its top collection opening is circular, then the corresponding inlet port is also circular, and their size parameters are consistent. Alternatively, if the sub-collecting device is cuboid and its top collection opening is rectangular, then the corresponding inlet port is also rectangular, and their size parameters are consistent. The specific structural form of the sub-collecting device is not particularly limited here; the inlet ports on the first shielding cover simply need to be correspondingly positioned.

[0067] The second shielding cover 51 is disposed on the top of the sub-collecting device, and the second shielding shell 52 is disposed on the periphery of the sub-collecting device; for the second shielding cover 51 corresponding to the energy collection device 11, the second collection hole 53 is disposed corresponding to the first collection hole 116 to ensure a straight path for the plasma to pass vertically through the T-strip, such as Figure 4 As shown. For the second shielding cover 51 corresponding to the dose collection device 12, since there is no grid inside the dose collection device 12, the second collection hole 53 on its second shielding cover 51 only needs to meet the above-mentioned size requirements. The position of the second collection hole 53 can be flexibly set according to the actual application needs. Preferably, the position of the second collection hole 53 can be set with reference to the position of the second collection hole 53 on the second shielding cover 51 of the energy collection device 11.

[0068] Understandably, the first and second shielding shells 52 are also provided with small holes for wires to pass through in order to achieve corresponding circuit connections.

[0069] In some embodiments, an insulating layer 54 is provided in the space between two adjacent grids and the space between the last grid and the first collector 117. The orthographic projection of the insulating layer 54 on the mounting plane covers the orthographic projection of the grid on the mounting plane.

[0070] It should be noted that an insulating layer 54 can also be provided between the first collecting electrode 117 and the inner wall of the collecting device housing, such as... Figure 4 As shown, the insulating layer 54 fits into the inner wall of the housing of the collecting device, providing support. The orthographic projection of the insulating layer 54 on the mounting plane covers the orthographic projection of the grid on the mounting plane, which is the aforementioned mounting plane on which the collecting device is specifically located. It should be noted that the reason for this arrangement is that, for the orthographic projection, if the edge of the grid is not completely covered by the insulating layer 54, the curvature effect will cause the local electric field strength to be too high. Only by following the above arrangement can the edge electric field distribution be smoothed and the withstand voltage performance improved. As described in subsequent embodiments, the first collecting electrode 117 will also be subjected to a third negative voltage, which means that there is a potential difference between the first collecting electrode 117 and the grid. If the above arrangement is not followed, direct contact may occur due to process errors, such as photolithography misalignment, resulting in a short circuit failure.

[0071] It should also be noted that, for example, corresponding to the cylindrical structure of the energy harvesting device 11, the insulating layer 54 can be an annular structure, and the diameter of the inner ring is larger than the diameter of the outer circle corresponding to the array of first collection holes 116, to ensure that the insulating layer 54 will not block the ion incident channel of the collection hole array.

[0072] More specifically, the first and second shielding structures in this application can be made of aluminum, and the grid can be made of nickel or stainless steel; the insulating layer 54 can be made of one of the following materials: polytetrafluoroethylene, ceramic, or mica, or of course, other insulating materials compatible with other processes, without any particular limitation.

[0073] In some embodiments, the grid group includes a first grid 112, a second grid 113, a third grid 114, and a fourth grid 115; The first grid 112 is grounded; The voltage supply module 4 is specifically used to provide a first negative voltage to the second grid 113, a first positive voltage to the third grid 114, and a second negative voltage to the fourth grid 115; wherein the second negative voltage is less than the first negative voltage.

[0074] Specifically, in order to ground the first grid 112, such as Figure 4 As shown, the first grid 112 can be connected to the second shielding cover 51, and the second shielding cover 51 is grounded; or, the first grid 112 can be connected to the grounding terminal of the N output terminals of the voltage supply module 4, without any particular limitation here; the voltage supply module 4 provides a first negative voltage to the second grid 113, specifically by the first negative voltage output module 41 in the voltage supply module 4 as described in the following embodiments applying the first negative voltage to the second grid 113; the voltage supply module 4 provides a first positive voltage to the third grid 114, specifically by the boost module 42 in the voltage supply module 4 as described in the following embodiments applying the first positive voltage to the third grid 114; the voltage supply module 4 provides a second negative voltage to the fourth grid 115, specifically by the second negative voltage output module 43 in the voltage supply module 4 as described in the following embodiments applying the second negative voltage to the fourth grid 115.

[0075] From the perspective of implementation principle, the first grid 112 is grounded and used to repel unwanted impurities contained in the plasma; the second grid 113, based on the applied first negative voltage, serves as the repulsive electrode in the grid group 111, used to separate positively charged particles and negatively charged particles, i.e., repelling foreign electrons while attracting positive ions to continue penetrating to the third grid 114; the third grid 114, based on the applied first positive voltage, serves as the analytical electrode in the grid group, used to analyze the distribution and magnitude of the energy range. Specifically, the first positive voltage on the third grid 114 will scan from 0V to a value close to a preset voltage. This preset voltage value is set according to actual needs and is not specifically limited here. For example, this preset voltage value... Assuming the voltage value can be 2000V, during the scanning process, the voltage value at a certain moment will serve as a voltage threshold for reaching the first collecting electrode 117 of the energy harvesting device 11. Positive ions with voltage values ​​lower than this threshold will be blocked outside the third grid 114, while positive ions with higher energy can pass through the voltage threshold of the third grid 114 and be collected by the collection sensor, or in other words, converted into a current signal after being collected. The fourth grid 115 serves as a receiving electrode, used to receive plasma that can reach the collection sensor and absorb secondary electrons generated by the impact, reducing the escape of secondary electrons and increasing the accuracy of the test data. The plasma is normally collected by the collection sensor through the first collection hole 116 on the fourth grid 115.

[0076] In some embodiments, the first collector 117 is connected to the voltage supply module 4; The voltage supply module 4 is also used to provide a third negative voltage to the first collector 117, which is less than the second negative voltage.

[0077] Specifically, the voltage supply module 4 provides a third negative voltage to the first collector 117, which is specifically applied to the first collector 117 by the third negative voltage output module 44 in the voltage supply module 4 described in the following embodiments.

[0078] From the perspective of implementation principle, the above settings enable the fourth grid 115 to have a negative voltage relative to the first collector 117. When positive ions reach the first collector 117, they will collide with the first collector 117 to generate secondary electrons. The escape of these secondary electrons will cause the measured current to be too large. Therefore, the electric field formed by the above settings will pull the secondary electrons back to the first collector 117, thereby improving the accuracy of the current signal.

[0079] In some embodiments, the voltage supply module 4 includes a boost module 42 and a first negative voltage output module 41, a second negative voltage output module 43 and a third negative voltage output module 44 based on a flyback negative voltage circuit. The boost module 42 is connected to the third grid 114, the first negative pressure output module 41 is connected to the second grid 113, the second negative pressure output module 43 is connected to the fourth grid 115, and the third negative pressure output module 44 is connected to the first collector 117.

[0080] It should be noted that the circuits of the first negative pressure output module 41, the second negative pressure output module 43, and the third negative pressure output module 44 are all based on the flyback negative pressure circuit. By changing the duty cycle of the controllable switch in the circuit, negative pressure output of different amplitudes can be achieved.

[0081] Please refer to Figure 5 , Figure 5 This is a schematic diagram of a boost module provided by the present invention.

[0082] In some embodiments, the boost module 42 includes a first inductor L1, a second inductor L2, a first controllable switch 61, and a second controllable switch 62; The first terminal of the first controllable switch 61 is connected to one end of the first inductor L1 and the positive output terminal of the first power supply VCC1, the second terminal is connected to one end of the second inductor L2 and then grounded, and the control terminal is connected to the control module 3. The first end of the second controllable switch 62 is connected to the other end of the first inductor L1, and the common terminal of the connection serves as the output terminal Vout1 of the boost module 42; the second end is connected to the other end of the second inductor L2 and the negative output terminal of the first power supply VCC1, and the control terminal is connected to the control module 3; wherein, the first controllable switch 61 and the second controllable switch 62 are used to not be turned on at the same time under the control of the control module 3.

[0083] Specifically, control module 3 outputs control signals with corresponding duty cycles to the first controllable switch 61 and the second controllable switch 62 according to the preset positive pressure requirement, so as to control the on and off states of the first controllable switch 61 and the second controllable switch 62. Here, the first controllable switch 61 and the second controllable switch 62 do not conduct simultaneously; that is, when the first controllable switch 61 is on, the second controllable switch 62 is off, and when the first controllable switch 61 is off, the second controllable switch 62 is on. More specifically, the first controllable switch 61 and the second controllable switch 62 can be directly controlled by control module 3. In this case, two output terminals of control module 3 are required to output control signals to the first controllable switch 61 and the second controllable switch 62 respectively. Or, as... Figure 5As shown, the control terminal of the first controllable switch 61, the input terminal of the NOT gate U5, and the output terminal of the clock generation module CLK are connected. The output terminal of the NOT gate U5 is connected to the control terminal of the second controllable switch 62. The ground terminal of the clock generation module CLK is grounded. The control terminal of the clock generation module CLK is connected to the control module 3. At this time, the control module 3 only outputs one control signal to the clock generation module CLK to control it to generate the corresponding clock signal, thereby realizing the control of the first controllable switch 61 and the second controllable switch 62. It also satisfies that the first controllable switch 61 and the second controllable switch 62 are not turned on at the same time, reducing the occupation of one output terminal of the control module 3.

[0084] In addition, such as Figure 5 As shown, the first controllable switch 61 can specifically be an N-type MOSFET Q1 (Metal Oxide Semiconductor Field Effect Transistor), and the second controllable switch 62 can specifically be an N-type MOSFET Q2; to more safely and reliably realize the function of the boost module 42, such as Figure 5 As shown, the boost module 42 may further include a second diode D2, a third diode D3, a fourth diode D4, a fifth capacitor C5, a sixth capacitor C6, a seventh capacitor C7, and a sixteenth resistor R16. The anode of the second diode D2 is connected to one end of the fifth capacitor C5 and the first end of the second controllable switch 62; the cathode of the second diode D2 is connected to one end of the sixth capacitor C6 and the anode of the fourth diode D4; the other end of the fifth capacitor C5 is connected to the anode of the third diode D3, one end of the seventh capacitor C7, and one end of the sixteenth resistor R16, and the common terminal of the connection is grounded; the other end of the sixth capacitor C6 is connected to the cathode of the third diode D3 and one end of the second inductor L2; the cathode of the fourth diode D4 is connected to the other end of the seventh capacitor C7 and the other end of the sixteenth resistor R16, and the common terminal of the connection serves as the output terminal Vout1 of the boost module 42. It should also be noted that the second diode D2, the third diode D3, and the fourth diode D4 can specifically be Schottky diodes.

[0085] From the perspective of implementation principle, when the clock signal output by the clock generation module CLK is high (i.e., 1), the first controllable switch 61 is turned on, and the output of the first power supply VCC1 flows from the first controllable switch 61 to the second inductor L2 and then back to the first power supply VCC1. At this time, the energy of the load, i.e., the third grid 114, is provided by the first power supply VCC1. The voltage polarity of the second inductor L2 is negative on the left and positive on the right, the inductor current increases linearly, and the magnetic field energy stored in it also begins to increase. Electrical energy is stored in the inductor coil in the form of magnetic energy, and the first inductor L1 charges the fifth capacitor C5. When the clock signal output by the clock generation module CLK is low (i.e., 0), When the first controllable switch 61 is off and the second controllable switch 62 is on, the energy of the load, i.e. the third grid 114, is still provided by the first power supply VCC1. However, in the first half of a cycle, i.e. the high-level part of the cycle, the power supplied to the sixth capacitor C6, the seventh capacitor C7, and the fifth capacitor C5 will simultaneously charge the load. When the clock signal level changes, the fifth capacitor C5 will maintain a certain charge state to prevent current loss and charge the load. As the cycle changes continuously, the voltage on the load will be charged to the preset full charge state by the superposition of the energy of the first power supply VCC1 and each capacitor, thus meeting the pressure requirement of the first positive pressure.

[0086] Please refer to Figure 6 , Figure 6 This is a schematic diagram of a flyback negative voltage circuit provided by the present invention.

[0087] In some embodiments, the flyback negative voltage circuit includes a transformer T1, a controller 64, a third controllable switch 63, a first feedback resistor R17, and a second feedback resistor R18. The first terminal of the primary winding TL1 of transformer T1 is connected to the second power supply VCC2 and the enable input terminal EN of controller 64, and the second terminal is connected to the first terminal of the third controllable switch 63; the first terminal of the secondary winding TL2 of transformer T1 is connected to one end of the first feedback resistor R17, and the common terminal of the connection serves as the output terminal Vout2 of the flyback negative voltage circuit, and the second terminal is connected to one end of the second feedback resistor R18, and the common terminal of the connection is grounded; the first terminal of the primary winding TL1 and the second terminal of the secondary winding TL2 are terminals of the same name; The second terminal of the third controllable switch 63 is grounded, and the control terminal is connected to the drive output terminal GATE of the controller 64. The other end of the first feedback resistor R17 is connected to the other end of the second feedback resistor R18, and the common terminal of the connection is connected to the feedback input terminal FBX of the controller 64.

[0088] Specifically, the control module 3 controls the on / off state of the third controllable switch 63 by outputting control signals with different duty cycles, thereby changing the negative voltage output by the flyback negative voltage circuit to meet the amplitude requirements of the first, second, and third negative voltages. More specifically, the third controllable switch 63 may include an N-type MOSFET Q3 and a seventeenth resistor R19 connected in series.

[0089] To achieve the function of the flyback negative voltage circuit more safely and reliably, such as Figure 6 As shown, the flyback negative voltage circuit may further include a fifth diode D5, an eighth capacitor C8, a ninth capacitor C9, and a switch K1-CLK. The ninth capacitor C9 and the switch K1-CLK are connected in series, with one end of the series connection connected to the first terminal of the primary winding TL1, and the other end connected to the second terminal of the primary winding TL1. The anode of the fifth diode D5 is connected to the first terminal of the secondary winding TL2, and the cathode of the fifth diode D5 is connected to one end of the first feedback resistor R17 and one end of the eighth capacitor C8. The common terminal of the connection serves as the output terminal Vout2 of the flyback negative voltage circuit, and the other end of the eighth capacitor C8 is grounded. Here, the eighth capacitor C8 is used to filter noise, and the fifth diode D5 is used for current reverse protection. The switch K1-CLK is used to turn on or off under the control of a clock signal to control the connection or disconnection of the ninth capacitor C9 accordingly.

[0090] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section. Relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one" does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0091] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An immersion plasma energy and dose testing device, characterized in that, It includes a collection device located inside the plasma immersion injection space, and a conversion module, a control module, and a voltage supply module located outside the space; The collection device is set at the target location within the space. The collection device has M sub-collection devices inside, including A energy collection devices and B dose collection devices, where A and B are both integers not less than 1, and M = A + B. The energy harvesting device contains a grid group and a first collecting electrode arranged sequentially at intervals along the incident direction of the plasma. The grid group includes N grids arranged sequentially at intervals along the incident direction. The N grids are connected to the voltage supply module, and the output terminal of the first collecting electrode is connected to the conversion module. The voltage supply module provides a corresponding target bias voltage to the N grids so that the N grids form a graded energy screening electric field to screen the incident plasma. The first collecting electrode collects the first ion signal corresponding to the plasma that has passed through the N grids and converts it into a first electrical signal for output. N is an integer greater than 1. The dose collection device is internally provided with a second collecting electrode, the output of which is connected to the conversion module. The second collecting electrode is used to collect a second ion signal corresponding to the total number of plasmas in the dose collection device and convert it into a second electrical signal before outputting it. The conversion module is connected to the control module and is used to select one electrical signal under the collection device at any time under the control of the control module, and convert the electrical signal to obtain a target voltage signal and send it to the control module, so that the control module can determine the energy distribution of the plasma based on the target voltage signal corresponding to the energy collection device, and determine the dose distribution of the plasma based on the target voltage signal corresponding to the dose collection device.

2. The immersion plasma energy and dose testing device as described in claim 1, characterized in that, The conversion module includes a multiplexing module and a signal conditioning module; The control terminal of the multiplexing module is connected to the control module. The first input terminal of the A channel is connected to the output terminals of the A first collectors one by one, and the second input terminal of the B channel is connected to the output terminals of the B second collectors one by one. The output terminal is connected to the input terminal of the signal conditioning module. Under the control of the control module, the module selects and outputs the voltage signal input at any input terminal of the module at any time. The output terminal of the signal conditioning module is connected to the control module, and the control terminal is connected to the control module. Under the control of the control module, the module converts the voltage signal it receives to obtain a target voltage signal that meets the preset input signal requirements of the control module.

3. The immersion plasma energy and dose testing device as described in claim 2, characterized in that, The signal conditioning module includes an amplifier circuit group, which includes at least one amplifier circuit. When there are multiple amplifier circuits, they are connected in sequence to amplify the voltage signal input to the signal conditioning module step by step.

4. The immersion plasma energy and dose testing device as described in claim 3, characterized in that, The signal conditioning module further includes a filtering module; the amplifier circuit group is connected to the filtering module in sequence.

5. The immersion plasma energy and dose testing device as described in claim 4, characterized in that, When the first phase of the voltage signal input to the amplifier circuit group shifts relative to the second phase, the signal conditioning module further includes a phase shifting module; wherein, the second phase is the phase of the voltage signal obtained after being amplified stage by the amplifier circuit group; The amplifier circuit group, the filter module, and the phase shifter module are connected in sequence; The phase-shifting module is used to perform phase-shifting processing on the voltage signal input to itself, so as to output a phase-shifted voltage signal, the phase of which is equal to the first phase.

6. The immersion plasma energy and dose testing device as described in claim 1, characterized in that, M sub-collecting devices are arranged on a mounting plate inside the collecting device, and are uniformly and symmetrically distributed with the central axis of the mounting plate as the symmetry reference.

7. The immersion plasma energy and dose testing device as described in any one of claims 1 to 6, characterized in that, Each of the grids is provided with a first collection hole array consisting of T first collection holes, the diameter of the first collection hole is less than a preset length, the preset length is twice the Debye length of the plasma, and T is an integer greater than 1; Each of the first acquisition holes under the grid is set in a one-to-one correspondence, and the central axes of the first acquisition holes at corresponding positions coincide.

8. The immersion plasma energy and dose testing device as described in claim 7, characterized in that, The collection device is surrounded by a first shielding structure, which includes a first shielding cover and a first shielding shell, and the first shielding shell is grounded. The first shielding cover is provided with M inlet ports, the i-th inlet port is correspondingly set with the i-th sub-collecting device and their central axes coincide, and the size parameters of the i-th inlet port and the collection opening at the top of the i-th sub-collecting device are the same, where 1≤i≤M and i is an integer. Each of the sub-collection devices is surrounded by a second shielding structure, which includes a second shielding cover and a second shielding shell. The second shielding cover is provided with a second collection hole array consisting of second collection holes, the diameter of which is the same as that of the first collection hole. On the second shielding cover corresponding to the energy collection device, each second collection hole is arranged in a one-to-one correspondence with the first collection hole, and the central axis of the second collection hole at the corresponding position coincides with that of the first collection hole.

9. The immersion plasma energy and dose testing device as described in claim 7, characterized in that, An insulating layer is provided in the space between two adjacent grids and in the space between the last grid and the first collecting electrode. The orthographic projection of the insulating layer on the mounting plane covers the orthographic projection of the grid on the mounting plane.

10. The immersion plasma energy and dose testing device as described in claim 7, characterized in that, The grid group includes a first grid, a second grid, a third grid, and a fourth grid; The first grid is grounded; The voltage supply module is specifically used to provide a first negative voltage to the second grid, a first positive voltage to the third grid, and a second negative voltage to the fourth grid; wherein the second negative voltage is less than the first negative voltage.

11. The immersion plasma energy and dose testing device as described in claim 10, characterized in that, The first collector electrode is connected to the voltage supply module; The voltage supply module is also used to provide a third negative voltage to the first collector electrode, the third negative voltage being less than the second negative voltage.

12. The immersion plasma energy and dose testing device as described in claim 11, characterized in that, The voltage supply module includes a boost module and a first negative voltage output module, a second negative voltage output module, and a third negative voltage output module based on a flyback negative voltage circuit. The boost module is connected to the third grid, the first negative pressure output module is connected to the second grid, the second negative pressure output module is connected to the fourth grid, and the third negative pressure output module is connected to the first collector.

13. The immersion plasma energy and dose testing device as described in claim 12, characterized in that, The boost module includes a first inductor, a second inductor, a first controllable switch, and a second controllable switch; The first terminal of the first controllable switch is connected to one end of the first inductor and the positive output terminal of the first power supply, the second terminal is connected to one end of the second inductor and then grounded, and the control terminal is connected to the control module. The first end of the second controllable switch is connected to the other end of the first inductor, and the common terminal of the connection serves as the output terminal of the boost module; the second end is connected to the other end of the second inductor and the negative output terminal of the first power supply, and the control terminal is connected to the control module; wherein, the first controllable switch and the second controllable switch are used to not be turned on simultaneously under the control of the control module.

14. The immersion plasma energy and dose testing device as described in claim 12, characterized in that, The flyback negative voltage circuit includes a transformer, a controller, a third controllable switch, a first feedback resistor, and a second feedback resistor. The first end of the primary winding of the transformer is connected to the enable input terminal of the second power supply and controller, and the second end is connected to the first end of the third controllable switch; the first end of the secondary winding of the transformer is connected to one end of the first feedback resistor, and the common terminal of the connection serves as the output terminal of the flyback negative voltage circuit; the second end is connected to one end of the second feedback resistor, and the common terminal of the connection is grounded; the first end of the primary winding and the second end of the secondary winding are terminals of the same name. The second terminal of the third controllable switch is grounded, and the control terminal is connected to the drive output terminal of the controller; The other end of the first feedback resistor is connected to the other end of the second feedback resistor, and the common terminal of the connection is connected to the feedback input terminal of the controller.

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