Dual coil plasma generation de-gluing device

Abstract

This invention discloses a dual-coil plasma stripping device. The invention relates to the field of semiconductor plasma stripping process equipment technology, and includes an air intake mechanism and a stripping mechanism. The upper cavity of the stripping mechanism includes a ceramic outer cylinder, a ceramic inner cylinder, an outer radio frequency (RF) coil, and an inner RF coil. The outer RF coil is located on the outside of the ceramic outer cylinder, and the inner RF coil is located on the inner wall of the ceramic inner cylinder. The advantages of this invention are: by adopting a dual-coil design with an outer RF coil and an inner RF coil, the outer RF coil, composed of a single-layer multi-strand coil, can carry a larger current, thereby generating a stronger electromagnetic field, which helps to improve the plasma generation efficiency and make the gas ionization more complete. The inner RF coil, spirally wrapped around the inner wall of the ceramic inner cylinder, works in conjunction with the outer RF coil to make the electromagnetic field more uniformly distributed in the reaction chamber, thereby ensuring that the plasma can uniformly cover the entire surface of the wafer to be processed, greatly improving the uniformity and quality of stripping.

Description

Technical Field

[0001] This invention relates to the field of semiconductor plasma resist removal equipment technology, specifically a dual-coil plasma generator resist removal device. Background Technology

[0002] In semiconductor manufacturing, photoresist removal is a critical step. Traditional photoresist removal methods include wet and dry methods. Plasma photoresist removal has attracted much attention due to its cleanliness and efficiency. However, in existing plasma photoresist removal technologies, the uniformity of the plasma and the removal rate are not ideal.

[0003] Therefore, we propose a dual-coil plasma degumming device. Summary of the Invention

[0004] The purpose of this invention is to provide a dual-coil plasma generator for degumming.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a dual-coil plasma generator for degumming, comprising an air intake mechanism and a degumming mechanism. The upper cavity of the degumming mechanism includes a ceramic outer cylinder, a ceramic inner cylinder, an outer radio frequency coil, and an inner radio frequency coil. The outer radio frequency coil is disposed on the outside of the ceramic outer cylinder, and the inner radio frequency coil is disposed on the inner wall of the ceramic inner cylinder. A cap is provided on the top surface of the ceramic inner cylinder, and both ends of the top surface of the cap are connected to the air intake mechanism. A connecting sealing ring is provided on the outside of the ceramic inner cylinder at the bottom end of the cap. The inner side of the connecting sealing ring is fixedly connected to the upper end of the ceramic outer cylinder. A reaction chamber is provided between the ceramic outer cylinder and the ceramic inner cylinder.

[0006] As a further aspect of the present invention: the outer radio frequency coil is composed of a single-layer multi-strand coil, and the inner radio frequency coil is composed of a single-layer coil, and is spirally wrapped around the inner wall of the ceramic inner cylinder.

[0007] As a further embodiment of the present invention: a connecting pipe is installed between the cap and the connecting ring, the upper end of the connecting pipe passes through the cap and is connected to the air inlet mechanism, and an air inlet hole is opened on the top surface of the connecting ring near the ceramic inner cylinder, the air inlet hole is located at the top of the reaction chamber, and the upper end is tightly connected to the lower end of the connecting pipe.

[0008] As a further aspect of the present invention: an installation cylinder is provided on the bottom surface of the connecting sealing ring away from the ceramic outer cylinder, and a groove is provided in the middle of the inner side of the installation cylinder, the inside of the groove being in contact with the external radio frequency coil.

[0009] As a further embodiment of the present invention: the upper and lower ends of the inner wall of the mounting cylinder are provided with mounting grooves, and a clamping assembly is provided inside the mounting groove. The clamping assembly includes a telescopic rod and a baffle. One end of the telescopic rod is connected to the bottom surface of the mounting groove, and the other end is connected to the upper and lower ends of one side of the baffle. The baffle is arc-shaped, and the side near the telescopic rod is in close contact with the side of the external radio frequency coil.

[0010] As a further aspect of the present invention: the air intake mechanism includes a sealing ring, a delivery pipe and an air storage tank, the bottom end of the sealing ring is connected to a connecting pipe, one end of the delivery pipe is connected to the sealing ring and the other end is connected to the air storage tank.

[0011] As a further embodiment of the present invention: a fixing connecting ring is connected to the bottom end of the mounting cylinder, and the fixing connecting ring is located on the side of the ceramic outer cylinder.

[0012] As a further aspect of the present invention: an air pump is connected to the bottom of the outer side of the reaction chamber, and a heating plate is provided at the bottom of the inner side, with the wafer to be processed fixed on the heating plate.

[0013] Compared with the prior art, the beneficial effects of the present invention by adopting the above technical solution are as follows:

[0014] 1. This invention employs a dual-coil design with an external radio frequency coil and an internal radio frequency coil. The external radio frequency coil is composed of a single-layer multi-strand coil, which can carry a larger current and thus generate a stronger electromagnetic field. This helps to improve the plasma generation efficiency, make the gas ionization more complete, and generate higher density plasma. The internal radio frequency coil is spirally wrapped around the inner wall of the ceramic inner cylinder. In conjunction with the external radio frequency coil, it makes the electromagnetic field more uniformly distributed in the reaction chamber. This ensures that the plasma can uniformly cover the entire surface of the wafer to be processed, which greatly improves the uniformity and quality of resist removal. It avoids situations such as incomplete or excessive resist removal in some areas of the wafer due to uneven plasma distribution, and ensures that the processed wafer can meet higher process standards.

[0015] 2. This invention, through its dual-coil design, effectively avoids the problem of low photoresist removal efficiency caused by insufficient local plasma density. This efficient and uniform photoresist removal mode enables rapid and stable removal of photoresist from numerous semiconductor wafers in large-scale production, effectively shortening the time required for photoresist removal from a single wafer, thereby improving the overall production line capacity and meeting the stringent requirements of high efficiency in large-scale manufacturing.

[0016] 3. The present invention can stably and accurately deliver process gas into the reaction chamber through the air intake mechanism. A connecting pipe is installed between the cap and the connecting ring. The upper end of the connecting pipe is connected to the air intake mechanism, and the lower end introduces the gas into the top of the reaction chamber through the air intake hole on the connecting ring. This ensures that the gas enters the reaction chamber in a reasonable and smooth way, so that the process gas can be evenly dispersed in the reaction chamber in a predetermined manner, fully contact and react with the generated plasma, thereby efficiently achieving the purpose of degumming.

[0017] Other advantages, objectives and features of the invention will be set forth in part in the description which follows, and in part will be apparent to those skilled in the art from the following examination or study, or may be learned from the practice of the invention. Attached Figure Description

[0018] Figure 1 This is a three-dimensional schematic diagram of the device in an embodiment of the present invention;

[0019] Figure 2 This is a schematic cross-sectional view of the device in an embodiment of the present invention;

[0020] Figure 3 This is a partial three-dimensional schematic diagram of the device in an embodiment of the present invention;

[0021] Figure 4 This is a partial front view of the device in an embodiment of the present invention.

[0022] In the diagram: 1. Air intake mechanism; 2. Adhesive removal mechanism; 3. Ceramic outer cylinder; 4. Ceramic inner cylinder; 5. External RF coil; 6. Internal RF coil; 7. Cover; 8. Connecting sealing ring; 9. Reaction chamber; 10. Connecting fittings; 11. Mounting cylinder; 12. Clamping assembly. Detailed Implementation

[0023] The specific embodiments of the present invention will be further described below with reference to the accompanying drawings. It should be noted that the description of these embodiments is for the purpose of helping to understand the present invention, but does not constitute a limitation of the present invention.

[0024] Furthermore, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0025] Please see the appendix Figure 1 - Appendix Figure 4This invention relates to a dual-coil plasma photoresist removal device. The upper cavity of the photoresist removal mechanism 2 includes a ceramic outer cylinder 3, a ceramic inner cylinder 4, an outer radio frequency coil 5, and an inner radio frequency coil 6. The outer radio frequency coil 5 is located on the outside of the ceramic outer cylinder 3, and the inner radio frequency coil 6 is located on the inner wall of the ceramic inner cylinder 4. The electromagnetic fields of the outer and inner coils work together to generate an electromagnetic field that is mainly focused in the central region of the reaction chamber 9, which is close to the wafer to be processed. This further enhances the plasma density in this region, allowing the photoresist to undergo a more complete chemical reaction when it comes into contact with the plasma. The top surface of the ceramic inner cylinder 4 is provided with a cap 7. The top two ends of the 7 are connected to the air intake mechanism 1 to ensure that the environment inside the reaction chamber 9 is relatively isolated from the outside. The top two ends are firmly connected to the air intake mechanism 1 through a special connection interface, so that the process gas delivered by the air intake mechanism 1 can enter the reaction chamber 9 in an orderly and precise manner. The outer side of the ceramic inner cylinder 4 is provided with a connecting sealing ring 8 at the bottom of the cover 7. The inner side of the connecting sealing ring 8 is fixedly connected to the upper end of the ceramic outer cylinder 3, which to a certain extent assists the cover 7 in sealing the reaction chamber 9, further reducing the possibility of gas leakage and external impurities entering the reaction chamber 9. The reaction chamber 9 is set between the ceramic outer cylinder 3 and the ceramic inner cylinder 4.

[0026] In Example 1, the outer radio frequency coil 5 is composed of a single-layer multi-strand coil, and the inner radio frequency coil 6 is composed of a single-layer coil, which is spirally wrapped around the inner wall of the ceramic inner cylinder 4. A connecting pipe 10 is installed between the cover 7 and the connecting sealing ring 8. The upper end of the connecting pipe 10 passes through the cover 7 and is connected to the air intake mechanism 1. An air intake hole is opened on the top surface of the connecting sealing ring 8 near the ceramic inner cylinder 4. The air intake hole is located at the top of the reaction chamber 9 and its upper end is tightly connected to the lower end of the connecting pipe 10.

[0027] Specifically, the external radio frequency coil 5 adopts a unique single-layer multi-strand coil structure, which is formed by twisting multiple thin wires together to form a single strand. This allows the coil to carry a larger current, and when the current passes through, it can generate a stronger electromagnetic field. During the plasma generation process, the strong electromagnetic field can more effectively penetrate the ceramic outer cylinder 3 and act on the process gas in the reaction chamber 9, causing the gas molecules to gain sufficient energy and thus undergo ionization more fully. The internal radio frequency coil 6 is a single-layer coil made of a single wire, which allows the electromagnetic field generated by the internal coil to be precisely focused on the core area of ​​the reaction chamber 9, that is, the position close to the wafer to be processed. It works in conjunction with the electromagnetic field generated by the external radio frequency coil 5. A connecting tube 10 is installed between the cover 7 and the connecting sealing ring 8. Its upper end precisely penetrates the cover 7 and is tightly connected to the cover 7 through a reliable method such as a sealing joint or welding, ensuring the stability and sealing of the connection.

[0028] In embodiment 2, an installation cylinder 11 is provided on the side of the bottom surface of the connecting sealing ring 8 away from the ceramic outer cylinder 3. A groove is provided in the middle of the inner side of the installation cylinder 11. The inside of the groove contacts the outer radio frequency coil 5. Installation slots are provided at the upper and lower ends of the inner wall of the installation cylinder 11. A clamping assembly 12 is provided inside the installation slot. The clamping assembly 12 includes a telescopic rod and a baffle. One end of the telescopic rod is connected to the bottom surface of the installation slot, and the other end is connected to the upper and lower ends of one side of the baffle. The baffle is arc-shaped, and the side near the telescopic rod is in close contact with the side of the outer radio frequency coil 5.

[0029] Specifically, the size of the groove matches the outline of the external radio frequency coil 5, allowing the external radio frequency coil 5 to be precisely embedded inside the groove and make close contact with the inner wall of the groove. This not only ensures the accurate spatial positioning of the external radio frequency coil 5, but also plays a role in fixing the coil to a certain extent, preventing unnecessary shaking or displacement during device operation. This ensures the stability of the electromagnetic field generated by the external radio frequency coil 5 and ensures that the plasma generation conditions are relatively constant, which is conducive to the stable and efficient removal of adhesive. The clamping component 12 provides a more reliable fixing effect for the external radio frequency coil 5. When the external radio frequency coil 5 is placed in the groove of the mounting cylinder 11, the baffle, under the elastic action of the telescopic rod, tightly abuts against the external radio frequency coil 5, applying a stable and uniform clamping force from both the top and bottom directions.

[0030] In embodiment 3, the air intake mechanism 1 includes a sealing ring, a delivery pipe and an air storage tank. The bottom end of the sealing ring is connected to the connecting pipe 10. One end of the delivery pipe is connected to the sealing ring and the other end is connected to the air storage tank. The bottom end of the mounting cylinder 11 is connected to a fixed connecting ring, which is located on the side of the ceramic outer cylinder 3. The bottom end of the reaction chamber 9 is connected to an air pump, and the bottom end of the interior is provided with a heating plate. The wafer to be processed is fixed on the heating plate.

[0031] Specifically, the fixed connecting ring ensures that the mounting cylinder 11 is stably positioned, thereby ensuring that the relevant components inside the mounting cylinder 11 also maintain a stable state. Furthermore, it can effectively share external forces such as vibration and thermal stress generated during the operation of the device, providing good protection for the structural integrity of the entire device. The air pump quickly extracts air and various impurity gases from the reaction chamber 9, bringing the chamber to a vacuum level suitable for plasma generation. A heating plate is also installed at the bottom of the reaction chamber 9, on which the wafer to be processed is firmly fixed. The heating plate can precisely control the temperature to ensure that the wafer is under suitable temperature conditions for desizing.

[0032] Working principle:

[0033] First, the gas inlet mechanism 1 starts operating. The gas storage tank, as a container for storing process gases (such as oxygen, which are commonly used in desizing reactions), delivers the gas to the sealing ring through a delivery pipe. The gas then passes through the sealing ring and connecting pipe 10 into the reaction chamber 9 in the upper cavity of the desizing mechanism 2. The upper end of the connecting pipe 10 passes through the cap 7 and is connected to the gas inlet mechanism 1. Finally, the gas flows into the reaction chamber 9 through the gas inlet hole located at the top of the connecting sealing ring 8, which is opened near the ceramic inner cylinder 4 and is located at the top of the reaction chamber 9. This ensures that the process gas is stably supplied to the reaction chamber 9. At the same time, the external radio frequency coil 5 (composed of a single-layer multi-strand coil) and the internal radio frequency coil 6 (a single-layer coil spirally wrapped around the inner wall of the ceramic inner cylinder 4) generate alternating electromagnetic fields after being powered on. The electromagnetic field generated by the external radio frequency coil 5 acts on the process gas in the reaction chamber 9 through the ceramic outer cylinder 3, while the electromagnetic field generated by the internal radio frequency coil 6 is focused on the core area near the wafer to be processed. The two work together to make the process gas in the reaction chamber 9... The process gas is fully ionized to form plasma. The outer coil assists in the ionization of the gas over a wide area, while the inner coil enhances the plasma density near the wafer. Structurally, the groove in the middle of the inner side of the mounting cylinder 11 on the bottom of the connecting sealing ring 8 contacts the outer RF coil 5. The clamping components 12 in the mounting grooves at the upper and lower ends of the inner wall of the mounting cylinder 11, through the cooperation of the telescopic rod and the arc-shaped baffle, tightly press against the side of the outer RF coil 5 to ensure its stability and maintain the stable generation of the electromagnetic field. In addition, the air pump connected to the bottom of the external reaction chamber 9 evacuates the chamber to a suitable vacuum level in advance to create conditions for plasma generation. During the photoresist removal process, reaction products are continuously pumped away to maintain stable gas pressure. The heating plate at the bottom of the internal chamber controls the wafer to be processed to a suitable temperature, so that the photoresist on the wafer reacts chemically with the active particles under the action of plasma, gradually decomposing into volatile small molecules, which are finally pumped out of the reaction chamber 9 by the air pump, thus removing the photoresist. At this point, the entire workflow is completed.

[0034] The terms "front," "back," "left," "right," "top," and "bottom" all refer to the figures in the accompanying drawings. Figure 1 Based on the perspective of the observer, the side of the device facing the observer is defined as the front, the left side of the observer is defined as the left, and so on.

[0035] In the description of this invention, it should be understood that the terms "center", "longitudinal", "lateral", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the scope of protection of this invention.

[0036] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the described embodiments.

[0037] For those skilled in the art, various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and these variations still fall within the protection scope of the present invention.

Claims

1. A dual-coil plasma generator for degumming, comprising an air intake mechanism (1) and a degumming mechanism (2), characterized in that: The upper cavity of the adhesive removal mechanism (2) includes a ceramic outer cylinder (3), a ceramic inner cylinder (4), an outer radio frequency coil (5), and an inner radio frequency coil (6). The outer radio frequency coil (5) is located on the outside of the ceramic outer cylinder (3), and the inner radio frequency coil (6) is located on the inner wall of the ceramic inner cylinder (4). The top surface of the ceramic inner cylinder (4) is provided with a cap (7). The two ends of the top surface of the cap (7) are connected to the air intake mechanism (1). The outer side of the ceramic inner cylinder (4) is provided with a connecting sealing ring (8) at the bottom end of the cap (7). The inner side of the connecting sealing ring (8) is fixedly connected to the upper end of the ceramic outer cylinder (3). A reaction chamber (9) is provided between the ceramic outer cylinder (3) and the ceramic inner cylinder (4).

2. The dual-coil plasma generator adhesive removal device according to claim 1, characterized in that: The outer radio frequency coil (5) is composed of a single-layer multi-strand coil, and the inner radio frequency coil (6) is composed of a single-layer coil and spirally surrounds the inner wall of the ceramic inner cylinder (4).

3. The dual-coil plasma generator adhesive removal device according to claim 1, characterized in that: A connecting pipe (10) is installed between the cover (7) and the connecting ring (8). The upper end of the connecting pipe (10) passes through the cover (7) and is connected to the air inlet mechanism (1). An air inlet hole is opened on the top surface of the connecting ring (8) near the ceramic inner cylinder (4). The air inlet hole is located at the top of the reaction chamber (9) and its upper end is tightly connected to the lower end of the connecting pipe (10).

4. The dual-coil plasma generator for degumming according to claim 1, characterized in that: The bottom surface of the connecting sealing ring (8) away from the ceramic outer cylinder (3) is provided with an installation cylinder (11). The middle of the inner side of the installation cylinder (11) is provided with a groove, and the inside of the groove is in contact with the outer radio frequency coil (5).

5. The dual-coil plasma generator adhesive removal device according to claim 4, characterized in that: The upper and lower ends of the inner wall of the mounting cylinder (11) are provided with mounting grooves. A clamping assembly (12) is provided inside the mounting groove. The clamping assembly (12) includes a telescopic rod and a baffle. One end of the telescopic rod is connected to the bottom surface of the mounting groove, and the other end is connected to the upper and lower ends of one side of the baffle. The baffle is arc-shaped and the side near the telescopic rod is in close contact with the side of the external radio frequency coil (5).

6. The dual-coil plasma generator adhesive removal device according to claim 1, characterized in that: The air intake mechanism (1) includes a sealing ring, a delivery pipe and an air storage tank. The bottom end of the sealing ring is connected to the connecting pipe (10). One end of the delivery pipe is connected to the sealing ring and the other end is connected to the air storage tank.

7. The dual-coil plasma generator adhesive removal device according to claim 5, characterized in that: The bottom end of the mounting cylinder (11) is connected to a fixing ring, which is located on the side of the ceramic outer cylinder (3).

8. The dual-coil plasma generator adhesive removal device according to claim 1, characterized in that: The reaction chamber (9) is connected to an air pump at its outer bottom and a heating plate is provided at its inner bottom. The wafer to be processed is fixed on the heating plate.

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