Magnetoelectric spin transistor, manufacturing method thereof and electronic equipment

Abstract

The invention discloses a magnetoelectric spin transistor, a manufacturing method thereof and electronic equipment, relates to the technical field of spin transistors, and is used for injecting charge current into an injection part through a source electrode and realizing spin injection through a spin Hall effect, and a ferromagnet does not need to be arranged on the injection part, so that scaling and practical application of a device can be realized. The magnetoelectric spin transistor comprises a magnetoelectric scattering layer, and a channel structure, a source electrode, a drain electrode and a gate stack structure which are arranged on the magnetoelectric scattering layer. Along the direction parallel to the surface of the magnetoelectric scattering layer, the channel structure comprises an injection part and a detection part which are arranged on the magnetoelectric scattering layer at an interval, and a connection part located between the injection part and the detection part. The channel structure comprises a strong spin orbit coupling material layer. The source electrode and the drain electrode are electrically connected with the two ends, in the length direction, of the injection part respectively, the gate stacking structure is arranged on the connecting part, and the gate stacking structure, the source electrode and the drain electrode are distributed at intervals; the length direction of the injection part intersects with the arrangement direction of the injection part and the detection part.

Description

A magnetoelectric spin transistor and its manufacturing method, and an electronic device thereof. Technical Field

[0001] This invention relates to the field of spin transistor technology, and more particularly to a magnetoelectric spin transistor, its manufacturing method, and electronic devices. Background Technology

[0002] Magnetoelectric spin transistors (METS) represent a significant research direction in ultra-low-power spintronics in the post-Moore's Law era. Their aim is to use an electric field (rather than energy-consuming current) to control information storage and processing, thereby achieving ultra-low-power computing. Specifically, the core idea of ​​METS is to use voltage (electric field) to control the magnetization state (direction) of a magnetic material, and then, through the opposition or passage effect of this magnetization state on the spin-polarized current, ultimately read out the magnitude of the output current.

[0003] However, the spin input of existing magnetoelectric spin transistors is realized through ferromagnetic sources, which has low spin polarization efficiency, making it difficult to scale up devices and apply them in practice. Summary of the Invention

[0004] The purpose of this invention is to provide a magnetoelectric spin transistor and its manufacturing method, as well as an electronic device, for injecting charge current into the injection section through the source and realizing spin injection through the spin Hall effect. No ferromagnetic material needs to be set on the injection section, which can save more space and facilitate the scaling of the device and its practical application.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a magnetoelectric spin transistor, comprising: a magnetoelectric scattering layer, and a channel structure, a source, a drain, and a gate stack structure disposed on the magnetoelectric scattering layer. The channel structure, along a direction parallel to the surface of the magnetoelectric scattering layer, includes an injection portion and a probe portion spaced apart on the magnetoelectric scattering layer, and a connection portion located between the injection portion and the probe portion. The channel structure includes a strong spin-orbit coupling material layer. The source and drain are electrically connected to the two ends of the injection portion along its length, respectively. The gate stack structure is disposed on the connection portion, and the gate stack structure is spaced apart from the source and drain. The length direction of the injection portion intersects the arrangement directions of the injection portion and the probe portion.

[0006] In the case of the above technical solution, the channel structure includes an injection section and a detection section spaced apart on the magnetoelectric scattering layer, and a connection section located between the injection section and the detection section. The source and drain are electrically connected to the two ends of the injection section along its length, respectively. The detection section is used to measure the voltage generated by the incoming spin current through the "inverse spin Hall effect". Based on this, when the magnetoelectric spin transistor provided by the present invention is in operation, a voltage is applied between the source and drain. The channel structure includes a strong spin-orbit coupling material layer. When charge flows in the strong spin-orbit coupling material, due to the spin Hall effect, a transverse spin current (a non-polarized charge current along the length direction of the injection section can generate a spin current perpendicular to the length direction of the injection section, which will enter the channel) and spin accumulation are generated. Electrons in the channel structure are separated according to their spin direction: for example, spin-up electrons accumulate to one side, and spin-down electrons accumulate to the other side. Secondly, the channel structure is disposed on the magnetoelectric scattering layer. A certain voltage is applied to the gate stack structure. The surface magnetization state of the magnetoelectric scattering layer acts as a scattering center, interacting with the spin-polarized electrons in the channel structure. Specifically, when the spin polarization direction is the same as the magnetization direction of the magnetoelectric scattering layer, most of the spin-up electrons will reach the detection unit and be detected through the inverse spin Hall effect. When the spin polarization direction is opposite to the magnetization direction of the magnetoelectric scattering layer, due to enhanced spin-dependent scattering, only a small portion of the spin-up electrons will be detected, thereby achieving information storage and switching control. As can be seen from the above, the magnetoelectric spin transistor provided by this invention injects charge current into the injection unit from the source and achieves spin injection through the spin Hall effect. No ferromagnetic material needs to be placed on the injection unit, saving more space and facilitating device scaling and practical applications.

[0007] In one example, the extension direction of the connecting part is perpendicular to the extension direction of the injection part and the probe part, respectively.

[0008] In one example, in the channel structure, the injection section and the probe section are symmetrically arranged about the connecting section.

[0009] In one example, the channel structure is H-shaped.

[0010] In one example, the thickness of the channel structure is less than or equal to 3 nm along the thickness direction of the magnetoelectric scattering layer.

[0011] In one example, the material of the strongly spin-orbit coupled material layer includes at least one of transition metal chalcogenides and heavy metals.

[0012] In one example, the source and / or drain materials include non-ferromagnetic conductive materials.

[0013] In one example, the material of the magnetoelectric scattering layer includes C2O3, BiFeO3, LuFeO3, and Yb.1-x Lu x At least one of FeO3, LiMPO4 and Y2NiMnO6.

[0014] In one example, the channel structure includes a weak spin-orbit coupling material layer disposed on the magnetoelectric scattering layer. The weak spin-orbit coupling material layer includes an injection section, a connection section, and a probe section. A strong spin-orbit coupling material layer is disposed on the side of the connection section facing away from the magnetoelectric scattering layer, and the strong spin-orbit coupling material layer is distributed alternately with the source and drain electrodes.

[0015] In one example, the magnetoelectric spin transistor further includes a dielectric layer disposed on a portion of the magnetoelectric scattering layer. The channel structure layer is exposed outside the dielectric layer. The source and drain are isolated from the magnetoelectric scattering layer by the dielectric layer.

[0016] In one example, the material of the dielectric layer includes at least one of Al2O3, ZrO2, HfO2, and SiO2.

[0017] In one example, the thickness of the dielectric layer is greater than or equal to 20 nm and less than or equal to 50 nm.

[0018] Secondly, the present invention provides an electronic device comprising the magnetoelectric spin transistor provided in the first aspect and its various implementations. The electronic device includes smartphones, personal computers, tablet computers, wearable devices, and integrated sensing-memory-computing chips, etc.

[0019] The beneficial effects of the second aspect and its various implementations in this invention can be found in the analysis of the beneficial effects of the first aspect and its various implementations, and will not be repeated here.

[0020] Thirdly, the present invention provides a method for manufacturing a magnetoelectric spin transistor, the method comprising: first, providing a magnetoelectric scattering layer; next, forming a channel structure on the magnetoelectric scattering layer; the channel structure including a strong spin-orbit coupling material layer; next, forming a source, drain, and gate stack structure above the magnetoelectric scattering layer; along a direction parallel to the surface of the magnetoelectric scattering layer, the channel structure including an injection portion and a probe portion spaced apart on the magnetoelectric scattering layer, and a connection portion located between the injection portion and the probe portion; the source and drain are electrically connected to the two ends of the injection portion along its length direction, respectively; the gate stack structure is disposed on the connection portion, and the gate stack structure is spaced apart from the source and drain; the length direction of the injection portion intersects the arrangement direction of the injection portion and the probe portion, respectively.

[0021] In one example, forming a channel structure, a source, a drain, and a gate stack structure on a magnetoelectric scattering layer includes: forming a channel layer on the magnetoelectric scattering layer; next, forming a source and a drain at both ends along the length of the portion of the channel layer corresponding to the injection portion; next, patterning the channel layer to form the channel structure on the remaining channel layer; and finally, forming a gate stack structure on the connection portion.

[0022] In one example, after forming a channel layer on the magnetoelectric scattering layer, and before forming the source and drain at opposite ends along the length of the injection portion of the channel layer, the method for manufacturing a magnetoelectric spin transistor further includes: forming a dielectric layer on a portion of the magnetoelectric scattering layer, with the portion of the channel layer corresponding to the formation of the channel structure exposed outside the dielectric layer. The source and drain are isolated from the magnetoelectric scattering layer by the dielectric layer.

[0023] The beneficial effects of the third aspect and its various implementations in this invention can be found in the analysis of the beneficial effects of the first aspect and its various implementations, and will not be repeated here. Attached Figure Description

[0024] The accompanying drawings, which are included to provide a further understanding of the invention and constitute a part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an improper limitation of the invention. In the drawings: Figure 1 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process; Figure 2 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process; Figure 3 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process; Figure 4 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process; Figure 5 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process; Figure 6 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process; Figure 7 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process; Figure 8 is a schematic diagram of the structure of a magnetoelectric spin transistor provided in an embodiment of the present invention during the manufacturing process.

[0025] Reference numerals: 11 is the magnetoelectric scattering layer, 12 is the channel structure, 13 is the source, 14 is the drain, 15 is the gate stack structure, 16 is the injection section, 17 is the probe section, 18 is the connection section, 19 is the strong spin-orbit coupling material layer, 20 is the weak spin-orbit coupling material layer, 21 is the dielectric layer, 22 is the channel layer, 23 is the gate dielectric layer, and 24 is the gate electrode. Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and not intended to limit the scope of the invention. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0027] The accompanying drawings illustrate various structural schematic diagrams according to embodiments of the present invention. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0028] In the context of this invention, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be an intermediate layer / element between them. Furthermore, if a layer / element is "on" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element. To make the technical problems, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0029] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. "Several" means one or more, unless otherwise explicitly specified.

[0030] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0031] Magnetoelectric spin transistors (METS) represent a significant research direction in ultra-low-power spintronics in the post-Moore's Law era. Their aim is to use an electric field (rather than energy-consuming current) to control information storage and processing, thereby achieving ultra-low-power computing. Specifically, the core idea of ​​METS is to use voltage (electric field) to control the magnetization state (direction) of a magnetic material, and then, through the opposition or passage effect of this magnetization state on the spin-polarized current, ultimately read out the magnitude of the output current.

[0032] However, the spin input of existing magnetoelectric spin transistors is realized through ferromagnetic sources, which has low spin polarization efficiency, making it difficult to scale up devices and apply them in practice.

[0033] To address the aforementioned technical problems, embodiments of the present invention provide a magnetoelectric spin transistor, its manufacturing method, and an electronic device. In the magnetoelectric spin transistor provided by these embodiments, charge current is injected into the injection section through the source, and spin injection is achieved through the spin Hall effect. No ferromagnetic material needs to be placed on the injection section, saving more space and facilitating device scaling and practical applications.

[0034] In a first aspect, embodiments of the present invention provide a magnetoelectric spin transistor. As shown in Figures 7 and 8, the magnetoelectric spin transistor includes: a magnetoelectric scattering layer 11, and a channel structure 12, a source 13, a drain 14, and a gate stack structure 15 disposed on the magnetoelectric scattering layer 11. The channel structure 12, along a direction parallel to the surface of the magnetoelectric scattering layer 11, includes an injection portion 16 and a detection portion 17 spaced apart on the magnetoelectric scattering layer 11, and a connection portion 18 located between the injection portion 16 and the detection portion 17. The channel structure 12 includes a strong spin-orbit coupling material layer 19. The source 13 and the drain 14 are electrically connected to the two ends of the injection portion 16 along its length direction, respectively. The gate stack structure 15 is disposed on the connection portion 18, and the gate stack structure 15 is spaced apart from the source 13 and the drain 14. The length direction of the injection portion 16 intersects the arrangement directions of the injection portion 16 and the detection portion 17.

[0035] As shown in Figures 7 and 8, when the above technical solution is adopted, the channel structure 12 includes an injection section 16 and a detection section 17 spaced apart on the magnetoelectric scattering layer 11, and a connection section 18 located between the injection section 16 and the detection section 17. The source 13 and the drain 14 are electrically connected to the two ends of the injection section 16 along the length direction, respectively. The detection section 17 is used to measure the voltage generated by the incoming spin current through the "inverse spin Hall effect". Based on this, when the magnetoelectric spin transistor provided in this embodiment of the invention is in the working state, a voltage is applied between the source 13 and the drain 14. The channel structure 12 includes a strong spin-orbit coupling material layer 19. When charge flows in the strong spin-orbit coupling material, a transverse spin current and spin accumulation are generated due to the spin Hall effect. Electrons in the channel structure 12 are separated according to the spin direction: for example, spin-up electrons accumulate to one side, and spin-down electrons accumulate to the other side. Secondly, the channel structure 12 is disposed on the magnetoelectric scattering layer 11. A certain voltage is applied to the gate stack structure 15. The surface magnetization state of the magnetoelectric scattering layer 11 serves as a scattering center, interacting with the spin-polarized electrons in the channel structure 12. Specifically, when the spin polarization direction is the same as the magnetization direction of the magnetoelectric scattering layer 11, most of the spin-up electrons will reach the detection unit 17 and be detected through the inverse spin Hall effect. When the spin polarization direction is opposite to the magnetization direction of the magnetoelectric scattering layer 11, due to enhanced spin-dependent scattering, only a small portion of the spin-up electrons will be detected, thereby achieving information storage and switching control. As can be seen from the above, the magnetoelectric spin transistor provided in this embodiment injects charge current into the injection unit 16 through the source 13 and achieves spin injection through the spin Hall effect. No ferromagnetic material needs to be placed on the injection unit 16, saving more space and facilitating device scaling and practical applications.

[0036] In practical applications, the material of the magnetoelectric scattering layer in this embodiment of the invention is not specifically limited and can be set according to actual needs. For example, the material of the magnetoelectric scattering layer may include C2O3, BiFeO3, LuFeO3, and Yb. 1-x Lu x At least one of FeO3, LiMPO4 and Y2NiMnO6.

[0037] From a material perspective, as shown in Figure 8, the channel structure 12 may consist only of a strongly spin-orbit coupled material layer 19. The term "strong spin-orbit coupled material" in the strongly spin-orbit coupled material layer 19 is a relative concept (as opposed to weakly spin-orbit coupled material). The distinction is based on the strength of the spin-orbit coupling interaction (SOC) relative to other energy scales (such as crystal field splitting, electron kinetic energy, electron-electron interactions, etc.). Specifically, the strongly spin-orbit coupled material is primarily composed of heavy elements, i.e., elements with high atomic numbers (Z). For example, the strongly spin-orbit coupled material may include 5d transition metal compounds, 4d / 5d chalcogenides, or bismuth-based materials. For instance, the material of the strongly spin-orbit coupled material layer 19 includes at least one of transition metal chalcogenides and heavy metals. Optionally, the transition metal chalcogenides may include MoS2, MoSe2, WS2, WSe2, TaS2, TiS3, and MoTe2; the heavy metals may include Pt, Pd, W, and Ta.

[0038] In another example, as shown in Figure 7, the channel structure 12 may further include a weak spin-orbit coupling material layer 20 disposed on the magnetoelectric scattering layer 11. The weak spin-orbit coupling material layer 20 includes an injection section 16, a connection section 18, and a detector section 17. A strong spin-orbit coupling material layer 19 is disposed on the side of the connection section 18 facing away from the magnetoelectric scattering layer 11, and the strong spin-orbit coupling material layer 19 is spaced apart from the source electrode 13 and the drain electrode 14, respectively. In this case, it is understood that since the weak spin-orbit coupling material layer 20 includes the injection section 16, the connection section 18, and the detector section 17, and the strong spin-orbit coupling material layer 19 is spaced apart from the source electrode 13 and the drain electrode 14, it can be seen that in this case, the strong spin-orbit coupling material layer 19 (which can be a dielectric layer) only enhances the spin-orbit coupling strength of the channel through the quantum nearest neighbor effect, and does not serve as a channel for transmitting electron flow. Based on this, the channel fabricated using a weak spin-orbit coupling material has weaker spin-flip scattering, ensuring that the spin information carried by the electron flow does not lose its directionality even after traveling a long distance in the channel. This is beneficial for ensuring that the magnetoelectric spin transistor can produce a high signal-to-noise ratio readout signal. Furthermore, the magnetoelectric spin transistor provided in this embodiment of the invention also includes a strong spin-orbit coupling material layer 19 (usually a dielectric layer) in contact with the weak spin-orbit coupling material layer 20. This layer can enhance the spin-orbit coupling strength of the channel through the quantum nearest neighbor effect (wave functions overlap at the interface of adjacent materials, so the channel fabricated based on the weak spin-orbit coupling material layer 20 inherits the characteristics of the strong spin-orbit coupling material layer 19). This makes the spin of the channel easier to manipulate, which is beneficial for improving the operating performance of the magnetoelectric spin transistor.

[0039] Among them, the aforementioned weak spin-orbit coupling materials are mainly composed of light elements, and the SOC intensity corresponding to the weak spin-orbit coupling materials is approximately proportional to the fourth power of the atomic number Z (Z0). 4 For example, weak spin-orbit coupling materials may include carbon-based materials or conventional semiconductor materials. For instance, the channel layer may include at least one of the following: a silicon layer, a silicon-germanium layer, a graphene layer, a gallium arsenide layer, and a two-dimensional electron gas layer composed of gallium nitride and gallium aluminum nitride heterostructures.

[0040] Regarding the thickness of the channel structure, since the electrons in the channel structure of the magnetoelectric spin transistor provided in this embodiment of the invention are scattered by the magnetoelectric scattering layer, the thickness of the channel structure affects the strength of the scattering effect received by electrons in different parts of the channel structure along the thickness direction. Based on this, it can be set according to the specific structure of the channel structure and actual needs.

[0041] For example, the thickness of the channel structure along the thickness direction of the magnetoelectric scattering layer can be less than or equal to 5 nm. Optionally, the thickness of the channel structure can be from 1 nm to 3 nm. For example, the thickness of the channel layer can be 0.5 nm, 1 nm, 1.2 nm, 1.5 nm, 1.8 nm, 2 nm, 2.2 nm, 2.5 nm, 2.8 nm, or 3 nm, etc. This setting can prevent poor continuity of the channel layer and high interface scattering due to excessively small channel layer thickness, thus giving the channel layer stable bulk electronic properties.

[0042] For example, when the channel structure includes a strong spin-orbit coupling material layer and a weak spin-orbit coupling material layer, the thickness of the weak spin-orbit coupling material layer can be greater than or equal to 1 nm and less than or equal to 5 nm. And / or, the thickness of the strong spin-orbit coupling material layer can be greater than or equal to 3 nm and less than or equal to 100 nm. This configuration can prevent geometric effects caused by an excessively thin strong spin-orbit coupling material layer, thereby improving the operating performance of the magnetoelectric spin transistor. Furthermore, it can also prevent the magnetoelectric spin transistor from becoming too large due to an excessively thick strong spin-orbit coupling material layer, thus facilitating the miniaturization of the magnetoelectric spin transistor.

[0043] Structurally, as shown in Figures 7 and 8, along a direction parallel to the surface of the magnetoelectric scattering layer 11, the channel structure 12 includes an injection section 16 and a detection section 17 spaced apart on the magnetoelectric scattering layer 11, and a connecting section 18 located between the injection section 16 and the detection section 17. The extending directions of the injection section 16 and the detection section 17 intersect the extending direction of the connecting section 18, respectively. It can be understood that the spin accumulation generated by the spin Hall effect is on the side of the channel structure 12, while the magnetoelectric scattering layer 11 is below the channel structure 12. By reasonably setting the morphology of the channel formed by the injection section 16, the detection section 17, and the connecting section 18, the scattering contrast can be maximized.

[0044] For example, as shown in Figures 7 and 8, the extension direction of the connecting portion 18 can be perpendicular to the extension directions of the injection portion 16 and the detector portion 17, respectively. With this configuration, the source 13 and drain 14 are located at both ends of the injection portion 16 along its length, and the current flows longitudinally along the channel structure 12 (in the extension direction of the connecting portion 18). The channel structure 12 contains a strongly spin-orbit coupling material. When current flows through it, due to the spin Hall effect, a spin current is generated in the transverse direction of the channel structure 12 (in the extension direction of the injection portion 16 and the detector portion 17). The spin accumulates on both sides of the channel, and the spin polarization direction is perpendicular to the surface plane of the magnetoelectric scattering layer 11. The magnetoelectric scattering layer 11 is located below the channel structure 12. Therefore, during transmission, the spin-polarized electrons in the channel structure 12 (whose spin polarization direction is along the thickness direction of the magnetoelectric scattering layer 11) interact with the magnetization of the magnetoelectric scattering layer 11. The magnetization direction of the magnetoelectric scattering layer 11 is located below the channel structure 12, and its magnetization direction is parallel or antiparallel to the spin polarization direction, thereby generating the maximum scattering contrast.

[0045] As exemplarily shown in Figures 7 and 8, in the channel structure 12, the injection section 16 and the detection section 17 are symmetrically arranged about the connecting section 18.

[0046] For example, as shown in Figures 7 and 8, the channel structure 12 is H-shaped. The H-shaped structure can be an H-shape, an I-shape, a U-shape, or a similar shape to an H-shape. Furthermore, in this case, the injection section 16 and the detection section 17 can be two vertically spaced sections in the H-shaped structure, while the connecting section 18 is a horizontally arranged section in the middle.

[0047] For the source and drain, the source and drain are electrically connected to the two ends of the injection section along its length. In this embodiment of the invention, the source injects spin-polarized current into the channel through the spin Hall effect, and does not utilize a ferromagnetic source to inject spin-polarized current into the channel structure. Therefore, in this embodiment of the invention, the material of the source and / or drain may include a non-ferromagnetic conductive material. No ferromagnetic material is disposed on the injection section of the channel structure. The materials of the source and drain can be the same or different.

[0048] For example, the materials for the source and / or drain may include copper, aluminum, silver, or gold.

[0049] For a gate stack structure, the gate stack structure includes a gate dielectric layer disposed on the connection portion, and a gate on the gate dielectric layer. The material of the gate dielectric layer can include any insulating dielectric material such as silicon oxide, hafnium oxide, or titanium oxide. The gate material can include any conductive material such as copper, aluminum, or silver.

[0050] In one example, as shown in Figures 7 and 8, the magnetoelectric spin transistor may further include a dielectric layer 21 disposed on a portion of the magnetoelectric scattering layer 11. The channel structure 12 layer is exposed outside the dielectric layer 21. The source 13 and drain 14 are isolated from the magnetoelectric scattering layer 11 by the dielectric layer 21. The presence of the dielectric layer 21 can passivate the surface dangling bonds of the magnetoelectric scattering layer 11, allowing the gate voltage to penetrate the interface more effectively, generating a stronger effective electric field within the magnetoelectric scattering layer 11, thereby more effectively exciting the magnetoelectric effect.

[0051] As for the material and thickness of the dielectric layer, they can be set according to actual needs, and no specific limitations are made here.

[0052] For example, the material of the dielectric layer may include at least one of Al2O3, ZrO2, HfO2 and SiO2.

[0053] In one example, the material of the dielectric layer may include at least one of Al2O3, ZrO2, HfO2, and SiO2.

[0054] In one example, the thickness of the dielectric layer can be greater than or equal to 20 nm and less than or equal to 50 nm. For example, the thickness of the dielectric layer can be 20 nm, 22 nm, 25 nm, 28 nm, 30 nm, 35 nm, 40 nm, 45 nm, or 50 nm, etc.

[0055] Secondly, embodiments of the present invention provide an electronic device including the magnetoelectric spin transistor provided in the first aspect and its various implementations. The electronic device includes smartphones, personal computers, tablet computers, wearable devices, and integrated sensing-memory-computing chips, etc.

[0056] The beneficial effects of the second aspect and its various implementations in the embodiments of the present invention can be referred to the analysis of the beneficial effects of the first aspect and its various implementations, and will not be repeated here.

[0057] Thirdly, embodiments of the present invention provide a method for manufacturing a magnetoelectric spin transistor. The manufacturing process will be described below with reference to perspective views or cross-sectional views of the operation shown in Figures 1 to 8. Specifically, the method for manufacturing the magnetoelectric spin transistor includes: First, providing a magnetoelectric scattering layer 11. Next, forming a channel structure 12 on the magnetoelectric scattering layer 11. The channel structure 12 includes a strong spin-orbit coupling material layer 19. Next, forming a source 13, a drain 14, and a gate stack structure 15 above the magnetoelectric scattering layer 11. Along a direction parallel to the surface of the magnetoelectric scattering layer 11, the channel structure 12 includes an injection portion 16 and a probe portion 17 spaced apart on the magnetoelectric scattering layer 11, and a connection portion 18 located between the injection portion 16 and the probe portion 17. The source 13 and the drain 14 are electrically connected to the two ends of the injection portion 16 along its length, respectively. The gate stack structure 15 is disposed on the connection portion 18, and the gate stack structure 15 is spaced apart from the source 13 and the drain 14. The length direction of the injection section 16 intersects the arrangement direction of the injection section 16 and the detection section 17, respectively.

[0058] It should be noted that the structure of the magnetoelectric spin transistor formed by the manufacturing method provided in the third aspect of the present invention is the same as the structure of the magnetoelectric spin transistor provided in the first aspect above. In the actual manufacturing process, the manufacturing process of the magnetoelectric spin transistor can be determined according to the specific structure and morphology of the channel structure.

[0059] For example, forming a channel structure, source, drain, and gate stack structure on the magnetoelectric scattering layer may include the following steps: As shown in Figures 1 and 2, a channel layer 22 may be formed on the magnetoelectric scattering layer 11 using processes such as chemical vapor deposition. Specifically, as shown in Figure 1, when the channel structure 12 fabricated based on the channel layer 22 only includes a strong spin-orbit coupling material layer 19, the channel layer 22 also only includes the strong spin-orbit coupling material layer 19. As shown in Figure 2, when the channel structure 12 fabricated based on the channel layer 22 includes both a strong spin-orbit coupling material layer 19 and a weak spin-orbit coupling material layer 20, the channel layer 22 also includes the weak spin-orbit coupling material layer 20 and the strong spin-orbit coupling material layer 19 disposed on the weak spin-orbit coupling material layer 20.

[0060] Next, if the manufactured magnetoelectric spin transistor includes a dielectric layer, then as shown in FIG3, processes such as atomic layer deposition and etching can be used to form a dielectric layer 21 on a portion of the channel layer 22, with the portion of the channel layer 22 corresponding to the formation of the channel structure 12 exposed outside the dielectric layer 21.

[0061] Next, as shown in Figure 4, electron beam evaporation and electron beam etching processes can be used to form the source 13 and drain 14 at both ends along the length of the portion of the channel layer 22 corresponding to the injection portion 16. This defines the positions of the injection portion 16, the connection portion 18, and the probe portion 17 in the channel structure 12.

[0062] It should be noted that when the source and drain are made of the same material, they can be formed simultaneously or separately. When the source and drain are made of different materials, the formation order of the source and drain can be set according to actual needs, and no specific limitation is made here. Furthermore, if the manufactured magnetoelectric spin transistor also includes a dielectric layer, the source and drain can be isolated from the magnetoelectric scattering layer through the dielectric layer.

[0063] Next, as shown in Figure 5, the channel layer 22 is patterned using processes such as electron beam etching so that the remaining channel layer 22 forms the channel structure 12.

[0064] Next, as shown in Figure 6, a gate dielectric layer 23 can be formed on the connector 18 using processes such as atomic layer deposition and selective etching.

[0065] Next, as shown in Figures 7 and 8, a gate 24 is formed on the gate dielectric layer 23 using processes such as electron beam evaporation and electron beam etching to obtain a gate stack structure 15.

[0066] The beneficial effects of the third aspect and its various implementations in the embodiments of the present invention can be referred to the analysis of the beneficial effects of the first aspect and its various implementations, and will not be repeated here.

[0067] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0068] The embodiments of the present invention have been described above. However, these embodiments are merely for clarity and are not intended to limit the scope of the invention. The scope of the invention is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of the invention, and all such substitutions and modifications should fall within the scope of the invention.

Claims

1. A magnetoelectric spin transistor, characterized in that, include: The system comprises a magnetoelectric scattering layer, and a channel structure, a source electrode, a drain electrode, and a gate stack structure disposed on the magnetoelectric scattering layer; wherein, along a direction parallel to the surface of the magnetoelectric scattering layer, the channel structure includes an injection portion and a detection portion disposed at intervals on the magnetoelectric scattering layer, and a connecting portion located between the injection portion and the detection portion; the channel structure includes a strong spin-orbit coupling material layer; the source electrode and the drain electrode are electrically connected to the two ends of the injection portion along its length direction, respectively; the gate stack structure is disposed on the connecting portion, and the gate stack structure is distributed at intervals with the source electrode and the drain electrode; the length direction of the injection portion intersects with the arrangement directions of the injection portion and the detection portion.

2. The magnetoelectric spin transistor according to claim 1, characterized in that, The extending direction of the connecting portion is perpendicular to the extending direction of the injection portion and the detection portion, respectively; and / or, in the channel structure, the injection portion and the detection portion are symmetrically arranged about the connecting portion; and / or, the channel structure is H-shaped.

3. The magnetoelectric spin transistor according to claim 1, characterized in that, Along the thickness direction of the magnetoelectric scattering layer, the thickness of the channel structure is less than or equal to 3 nm; and / or, the material of the strong spin-orbit coupling material layer includes at least one of transition metal chalcogenides and heavy metals.

4. The magnetoelectric spin transistor according to claim 1, characterized in that, The source and / or drain are made of non-ferromagnetic conductive materials.

5. The magnetoelectric spin transistor according to claim 1, characterized in that, The materials of the magnetoelectric scattering layer include C2O3, BiFeO3, LuFeO3, and Yb. 1-x Lu x At least one of FeO3, LiMPO4 and Y2NiMnO6.

6. The magnetoelectric spin transistor according to claim 1, characterized in that, The channel structure includes a weak spin-orbit coupling material layer disposed on the magnetoelectric scattering layer; the weak spin-orbit coupling material layer includes the injection part, the connection part and the detection part; the strong spin-orbit coupling material layer is disposed on the side of the connection part away from the magnetoelectric scattering layer, and the strong spin-orbit coupling material layer is distributed at intervals with the source and the drain.

7. The magnetoelectric spin transistor according to claim 1, characterized in that, The magnetoelectric spin transistor further includes a dielectric layer disposed on a portion of the magnetoelectric scattering layer; the channel structure layer is exposed outside the dielectric layer; the source and the drain are isolated from the magnetoelectric scattering layer through the dielectric layer.

8. The magnetoelectric spin transistor according to claim 7, characterized in that, The material of the dielectric layer includes at least one of Al2O3, ZrO2, HfO2 and SiO2; and / or, the thickness of the dielectric layer is greater than or equal to 20 nm and less than or equal to 50 nm.

9. An electronic device, characterized in that, include: The magnetoelectric spin transistor as described in any one of claims 1 to 8; the electronic device includes smartphones, personal computers, tablet computers, wearable devices, and integrated sensing, storage, and computing chips.

10. A method for manufacturing a magnetoelectric spin transistor, characterized in that, include: Provide a magnetoelectric scattering layer; A channel structure is formed on the magnetoelectric scattering layer; the channel structure includes a layer of strongly spin-orbit coupling material. A source, drain, and gate stack structure is formed above the magnetoelectric scattering layer. Along a direction parallel to the surface of the magnetoelectric scattering layer, the channel structure includes an injection portion and a probe portion spaced apart on the magnetoelectric scattering layer, and a connecting portion located between the injection portion and the probe portion. The source and drain are electrically connected to the two ends of the injection portion along its length. The gate stack structure is disposed on the connecting portion, and the gate stack structure is spaced apart from the source and drain. The length direction of the injection portion intersects the arrangement directions of the injection portion and the probe portion.

11. The method for manufacturing a magnetoelectric spin transistor according to claim 10, characterized in that, Forming the channel structure, the source, the drain, and the gate stack structure on the magnetoelectric scattering layer includes: forming a channel layer on the magnetoelectric scattering layer; forming the source and drain at both ends along the length direction of the portion of the channel layer corresponding to the injection portion; patterning the channel layer so that the remaining channel layer forms the channel structure; and forming the gate stack structure on the connection portion.

12. The method for manufacturing a magnetoelectric spin transistor according to claim 11, characterized in that, After forming the channel layer on the magnetoelectric scattering layer, and before forming the source and drain at both ends along the length direction of the portion of the channel layer corresponding to the injection portion, the manufacturing method of the magnetoelectric spin transistor further includes: forming a dielectric layer on a portion of the magnetoelectric scattering layer, wherein the portion of the channel layer corresponding to the formation of the channel structure is exposed outside the dielectric layer; and the source and drain are isolated from the magnetoelectric scattering layer through the dielectric layer.

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