Glass substrate, preparation method thereof and electronic equipment
By setting a metal film within the groove structure of the glass substrate and controlling its thickness, filling the opening with a metal layer, and combining it with an insulating and solder resist layer design, the problem of poor adhesion between the metal layer and the glass plate is solved, improving product yield and reliability, simplifying the process and reducing costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHENZHEN LAIBAO HI TECH
- Filing Date
- 2025-12-30
- Publication Date
- 2026-05-01
AI Technical Summary
When depositing a metal layer on a glass substrate, the uneven distribution of current density and fluctuations in the composition of the plating solution in the micro-area during the electroplating process cause internal stress in the metal layer. Furthermore, the poor adhesion between the glass plate and the metal layer makes it easy for the metal circuitry to separate from the glass plate, affecting product yield and reliability.
A first metal film is placed in the groove structure on the surface of the glass core board, and its thickness is controlled to be less than the groove depth. At the same time, the thickness of the metal layer filled in the opening is less than the opening depth. Through the design of the insulating layer and the solder resist layer, a solder pad is formed to improve the bonding force.
This effectively prevents the metal circuitry from separating from the glass core board under internal stress, improves the bonding force between the glass core board and the metal layer, reduces stress concentration, enhances product yield and reliability, simplifies the process, and reduces costs.
Smart Images
Figure CN121969178A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor packaging, and more particularly to a glass substrate and its preparation method, and electronic devices. Background Technology
[0002] Through-Glass Via (TGV) technology is an advanced packaging technology that creates micron-sized through-holes in a glass substrate to achieve vertical interconnection of chips. After forming the through-holes in the glass substrate, conductive material is filled into the through-holes to achieve vertical interconnection of electrical signals within the glass substrate. Due to uneven current density distribution and fluctuations in the composition of the plating solution within the micro-area during electroplating, internal stress is generated in the metal layer during deposition. Furthermore, the adhesion between the glass substrate and the metal layer is poor. This causes the metal circuitry on the glass substrate surface to easily separate from the glass substrate under the action of internal stress, leading to product failure and affecting product yield and reliability. Summary of the Invention
[0003] The main objective of this application is to provide a glass substrate and its preparation method, as well as an electronic device, which can effectively improve the bonding force between the glass core and the metal layer, while also avoiding excessive stress concentration that could lead to delamination of the metal layer and the glass core or cracks in the glass core.
[0004] In a first aspect, this application provides a glass substrate, the glass substrate comprising a glass core, a first metal layer, an insulating layer, a second metal layer, and a solder resist layer; The glass core plate has multiple openings, and the glass core plate includes a first surface and a second surface opposite to each other along its thickness direction, and a groove structure is formed on the first surface and / or the second surface. The first metal layer includes at least a first metal film disposed within the groove structure and a filling metal layer disposed within the opening, wherein the thickness of the first metal film is less than the depth of the groove structure and the thickness of the filling metal layer is less than the depth of the opening. The insulating layer covers the glass core plate, and the insulating layer at least covers the first metal film; The second metal layer at least partially covers the filler metal layer; The solder resist layer covers the insulating layer, and the solder resist layer includes a window portion, where the second metal layer is exposed to form a solder pad.
[0005] Secondly, this application provides a method for preparing a glass substrate, the method comprising: A glass core board is prepared by forming a plurality of openings and at least one groove structure on the surface of a glass plate. A first metal layer is formed on the surface of the glass core plate. The first metal layer includes at least a first metal film disposed in the groove structure and a filling metal layer disposed in the opening. Remove part of the first metal layer until the thickness of the first metal film is less than the depth of the groove structure and the thickness of the filling metal layer is less than the depth of the opening. An insulating layer with a first hollow area is formed on the surface of the glass core plate, and the first hollow area is disposed corresponding to the first metal layer. A second metal layer is formed on the surface of the insulating layer having the first hollow area, the second metal layer at least partially covering the filler metal layer; A solder resist layer is formed on the surface of the insulating layer, the solder resist layer including a window, and a second metal layer is exposed at the window to form a solder pad.
[0006] Thirdly, this application provides a method for preparing a glass substrate, the method comprising: A glass core board is prepared by forming a plurality of openings and at least one groove structure on the surface of a glass plate. A first metal layer is formed on the surface of the glass core plate. The first metal layer includes at least a first metal film disposed in the groove structure and a filling metal layer disposed in the opening. An insulating layer with a first hollow area is formed on the surface of the glass core plate, and the first hollow area is disposed corresponding to the first metal layer. A second metal layer is formed on the surface of the insulating layer having the first hollow area, the second metal layer at least partially covering the filler metal layer; A solder resist layer is formed on the surface of the insulating layer, the solder resist layer including a window, and a second metal layer is exposed at the window to form a solder pad.
[0007] Thirdly, this application provides an electronic device comprising the glass substrate described above, or the electronic device comprising a glass substrate prepared by the glass substrate preparation method described above.
[0008] This application provides a glass substrate and its fabrication method, as well as an electronic device. The glass substrate includes a glass core, a first metal layer, an insulating layer, a second metal layer, and a solder resist layer. The glass core has multiple openings and includes a first surface and a second surface opposite to each other along its thickness direction, with groove structures formed on the first surface and / or the second surface. The first metal layer includes at least a first metal film disposed within the groove structure and a filler metal layer disposed within the openings, wherein the thickness of the first metal film is less than the depth of the groove structure, and the thickness of the filler metal layer is less than the depth of the openings. The insulating layer covers the glass core and at least covers the first metal film. The second metal layer at least partially covers the filler metal layer. The solder resist layer covers the insulating layer and includes a window, with the second metal layer exposed at the window to form a solder pad. The glass substrate provided in this application, by placing a first metal film within a groove structure on the surface of a glass core board, allows the metal circuits formed by the first metal film to be embedded within the glass core board. This effectively prevents the metal circuits from separating from the glass core board under internal stress, improving the bonding force between the glass core board and the metal layer. Furthermore, by controlling the thickness of the first metal film to be less than the depth of the groove structure and the thickness of the filling metal layer to be less than the depth of the opening, it effectively avoids excessive stress concentration that could lead to delamination of the metal layer from the glass core board or cracks in the glass core board. This improves product yield, reliability, and packaging effect. Moreover, this preparation method does not require melting glass materials, resulting in a simple process and low cost. Attached Figure Description
[0009] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0010] Figure 1 A schematic flowchart illustrating the steps of a method for preparing a glass substrate according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a glass plate provided in an embodiment of this application; Figure 3 This is a schematic diagram of the structure of a glass core board provided in an embodiment of this application; Figure 4 This is a schematic diagram of a structure for preparing a first seed layer on the surface of a glass core board, provided in an embodiment of this application. Figure 5 This is a schematic diagram of a structure for preparing a first metal layer, provided in an embodiment of this application. Figure 6 This is a schematic diagram of a structure for removing the first metal layer, provided in an embodiment of this application. Figure 7 This is a schematic diagram of another structure for removing the first metal layer provided in an embodiment of this application; Figure 8 This is a schematic diagram of a structure for preparing an insulating layer provided in an embodiment of this application; Figure 9 A schematic diagram of a structure for forming an insulating layer with a first hollowed-out region is provided in an embodiment of this application; Figure 10 This is a schematic diagram of a structure for preparing a second seed layer provided in an embodiment of this application; Figure 11 This application provides a schematic diagram of a structure for forming a first photoresist layer with a second hollowed-out region, as provided in an embodiment of the present application. Figure 12 This is a schematic diagram of a structure for preparing a second metal layer according to an embodiment of this application; Figure 13 This is a schematic diagram of the structure of a glass substrate provided in an embodiment of this application; Figure 14 A schematic flowchart illustrating the steps of another method for preparing a glass substrate provided in this application embodiment; Figure 15 This is a schematic block diagram of a terminal device provided in an embodiment of this application. Detailed Implementation
[0011] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0012] The flowchart shown in the attached diagram is for illustrative purposes only and does not necessarily include all content and operations / steps, nor does it necessarily have to be performed in the order described. For example, some operations / steps can be broken down, combined, or partially merged, so the actual execution order may change depending on the actual situation.
[0013] It should be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.
[0014] It should be understood that, in order to clearly describe the technical solutions of the embodiments of this application, the terms "first" and "second" are used in the embodiments of this application to distinguish identical or similar items with essentially the same function and effect. For example, the first callback function and the second callback function are only used to distinguish different callback functions and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and the terms "first" and "second" do not necessarily mean they must be different.
[0015] It should also be understood that the term "and / or" as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.
[0016] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0017] With the continuous development of 5G and the Internet of Things (IoT), the demand for signal transmission is increasing, and the requirements for packaging substrates are becoming thinner and the lines finer. Traditional organic resin boards, due to their large coefficient of thermal expansion, large roughness, and poor flatness, are difficult to meet the increasingly high requirements of current circuit design. In contrast, glass substrates, with their lower dielectric constant, lower coefficient of thermal expansion, better flatness, and thermal stability, show significant advantages over traditional organic resin substrates in many key dimensions such as electrical performance, packaging reliability, and processing adaptability, thus meeting the development needs of semiconductor packaging for "high frequency, high density, and high reliability".
[0018] In related technologies, metal circuits are typically placed on the surface of a glass core board. However, due to uneven current density distribution and fluctuations in plating solution composition within micro-areas during electroplating, internal stress is generated in the metal layer during deposition. Furthermore, the bonding force between the glass board and the metal layer is poor. Consequently, the metal circuits placed on the surface of the glass core board are prone to separation from the glass board under the action of internal stress, leading to product failure and affecting product yield and reliability.
[0019] To address the aforementioned issues, this application provides a glass substrate and its fabrication method, as well as an electronic device. By placing a first metal thin film within a groove structure on the surface of a glass core board, the metal circuits formed by the first metal thin film can be embedded within the glass core board. This effectively prevents the metal circuits from separating from the glass core board under internal stress, thereby improving the bonding force between the glass core board and the metal layer. Simultaneously, the thickness of the first metal thin film is controlled to be less than the depth of the groove structure, and the thickness of the filling metal layer is less than the depth of the opening. This effectively avoids excessive stress concentration that could lead to delamination of the metal layer from the glass core board or cracks in the glass core board, thereby improving product yield and reliability.
[0020] Please see Figure 1 , Figure 1 This is a schematic flowchart illustrating the steps of a method for preparing a glass substrate according to an embodiment of this application.
[0021] like Figure 1 As shown, the method for preparing the glass substrate includes steps S101 to S106.
[0022] S101. A glass plate is provided, and a plurality of openings and at least one groove structure are formed on the surface of the glass plate to obtain a glass core plate.
[0023] like Figure 2 As shown, exemplarily, the glass plate 10 is a glass plate 10 that has not undergone any etching treatment. Before forming a plurality of openings 13 and at least one groove structure 12 on the surface of the glass plate 10, the surface of the glass plate 10 can be cleaned first, which is beneficial for subsequent etching treatment of the glass plate 10.
[0024] like Figure 3 As shown, in some embodiments, a plurality of openings 13 and at least one groove structure 12 are formed on the surface of the glass plate 10 by laser-modified etching to obtain a glass core plate 11.
[0025] For example, multiple openings 13 and one or more groove structures 12 can be formed on the surface of the glass plate 10. It should be noted that the multiple groove structures 12 can be on the same surface of the glass plate 10 or on different surfaces of the glass plate 10, without specific limitation here.
[0026] For example, laser pulses can be used to selectively modify the glass plate 10, altering its local structure or chemical properties; subsequently, the modified areas are selectively removed by wet chemical etching, thereby achieving the fabrication of micro / nano structures. Laser-modified etching forms multiple openings 13 and groove structures 12, which helps improve processing accuracy and reduce debris generation. Specifically, femtosecond lasers induce refractive index changes or crystallization within the glass, forming modified areas, which are then etched to form high aspect ratio structures.
[0027] It should be noted that the method for forming the opening 13 on the glass plate 10 can also be sandblasting, photosensitive glass, focused discharge, plasma etching, laser ablation, electrochemical or laser-induced etching.
[0028] For example, the method for forming the opening 13 on the glass plate 10 is laser-induced layer etching, which is beneficial for rapid hole formation and saves the time of processing the opening 13. In addition, the laser-induced layer etching method can produce high-density openings 13 with high aspect ratios and less damage to the openings 13. The aspect ratio is the ratio of the depth of the opening 13 to the diameter of the opening 13, and a ratio of 5:1 or higher can be called a high aspect ratio.
[0029] For example, the number of openings 13 formed on the glass plate 10 can be multiple, and the multiple openings 13 can be arranged in an array, such as in rows and columns or other forms of array arrangement. The number of openings 13 can be designed as needed, and this application does not make a specific limitation.
[0030] like Figure 3 As shown, specifically, the glass core plate 11 has a plurality of openings 13, and the glass core plate 11 includes a first surface and a second surface opposite to each other along its thickness direction, and a groove structure 12 is formed on the first surface and / or the second surface.
[0031] For example, the glass core panel 11 has a plurality of openings 13, which can be arranged symmetrically or asymmetrically, without specific limitation. The first surface can be the upper surface of the glass core panel 11, and the second surface can be the lower surface of the glass core panel 11. The openings 13 penetrate the thickness of the glass core panel 11, and one opening of the opening 13 can be located on the first surface, while the other opening of the opening 13 can be located on the second surface.
[0032] In this embodiment, the glass core plate 11 can be used to reduce thermal stress and deformation by taking advantage of its small dimensional changes during high-temperature manufacturing and operation, thereby improving the reliability of the packaging structure.
[0033] For example, the groove structure 12 may be formed only on the first surface (upper surface) of the glass core board 11; the groove structure 12 may also be formed on the second surface (lower surface) of the glass core board 11; or the groove structure 12 may be formed on both the first surface (upper surface) and the second surface (lower surface) of the glass core board 11, without any specific limitation.
[0034] Preferably, the groove structure 12 includes a first groove 121 formed on the first surface and a second groove 122 formed on the second surface. Subsequently, a metal film can be provided in both the first groove 121 and the second groove 122, so that the metal circuit formed by the metal film is embedded in the glass core plate 11 in both surfaces, thereby effectively preventing the metal circuit from separating from the glass core plate 11 under the action of internal stress and improving the bonding force between the glass core plate 11 and the metal layer.
[0035] For example, the cross-sectional shape of the groove structure 12 can be square, rectangular, trapezoidal, irregular, etc., and is not specifically limited here. The depth of the groove structure 12 can be arbitrary and can be set according to actual process requirements, and is not specifically limited here.
[0036] like Figure 3 As shown, specifically, the opening portion 13 includes a through hole 131 and a transverse groove structure 132 communicating with the opening of the through hole 131. The groove width of the transverse groove structure 132 is greater than the diameter of the through hole 131.
[0037] For example, the through hole 131 is located in the middle of the opening portion 13 and is used to penetrate the glass core plate 11. The transverse groove structure 132 located on both sides of the through hole 131 is connected to the through hole 131, and the groove width of the transverse groove structure 132 is greater than the hole diameter of the through hole 131.
[0038] like Figure 4 As shown, in some embodiments, after the glass core plate 11 is formed, a first seed layer 20 is formed on the surface of the glass core plate 11.
[0039] For example, a physical vapor deposition (PVD) process can be used to sputter a first preset metal onto the surface of the glass core plate 11 to form a first seed layer 20 on the surface of the glass core plate 11. Specifically, the first preset metal can be a titanium / copper or tantalum / copper alloy.
[0040] For example, a first preset metal can be sputtered onto the first surface, the second surface, the surface of the groove structure 12, and the opening portion 13 of the glass core plate 11 to form a first seed layer 20 on the surface of the glass core plate 11.
[0041] S102. A first metal layer is formed on the surface of the glass core board. The first metal layer includes at least a first metal film disposed in the groove structure and a filling metal layer disposed in the opening.
[0042] like Figure 5As shown, a second predetermined metal can be deposited on the surface of the glass core plate 11 using a chemical vapor deposition (CVD) process to fill the groove structure 12 and the opening portion 13 with metal, forming a first metal thin film 31 disposed in the groove structure 12 and a filling metal layer 33 disposed in the opening portion 13. The second predetermined metal can specifically be a copper, titanium / copper, or tantalum / copper alloy; preferably, the first metal layer 30 is a copper layer. This allows the first metal thin film 31 to be disposed within the groove structure 12 to form a metal circuit, enabling the metal circuit formed by the first metal thin film 31 to be embedded within the glass core plate 11, thereby effectively preventing the metal circuit from separating from the glass core plate 11 under internal stress and improving the bonding strength between the glass core plate 11 and the metal layer.
[0043] For example, the first seed layer 20 is thickened to fill the groove structure 12 with metal to form a first metal film 31 disposed in the groove structure 12, and the opening portion 13 is filled with metal to form a filling metal layer 33 disposed in the opening portion 13, i.e., a metal pillar.
[0044] Specifically, the thickness of the filler metal layer 33 is at least greater than the depth of the through hole 131.
[0045] For example, since the opening portion 13 includes a through hole 131 and a transverse groove structure 132 communicating with the opening of the through hole 131, the filling metal layer 33 includes a metal pillar located in the through hole 131 and a metal layer located in the transverse groove structure 132. That is, the thickness of the filling metal layer 33 includes the thickness of the metal pillar located in the through hole 131 and the thickness of the metal layer located in the transverse groove structure 132. Therefore, the thickness of the filling metal layer 33 is at least greater than the depth of the through hole 131.
[0046] S103. Remove part of the first metal layer until the thickness of the first metal film is less than the depth of the groove structure and the thickness of the filling metal layer is less than the depth of the opening.
[0047] like Figure 6 and Figure 7 As shown, in some embodiments, the first metal layer 30 is removed by grinding and polishing; the first metal film 31 and the filling metal layer 33 are etched by chemical etching until the thickness of the first metal film 31 is less than the depth of the groove structure 12 and the thickness of the filling metal layer 33 is less than the depth of the opening portion 13.
[0048] For example, such as Figure 6As shown, the first metal layer 30 can be removed by grinding and polishing until the distance between the surface of the first metal layer 30 and the first and second surfaces in the thickness direction is a preset distance, such as 5µm, so as to ensure that the part of the first metal layer 30 above the surface of the glass core board 11 is basically removed, leaving only the thinner first metal layer 30.
[0049] like Figure 7 As shown, after removing most of the first metal layer 30, the first metal film 31 and the filling metal layer 33 are etched by chemical etching until the thickness of the first metal film 31 is less than the depth of the groove structure 12 and the thickness of the filling metal layer 33 is less than the depth of the opening portion 13.
[0050] Taking the first surface of the glass core board 11 as the upper surface and the first surface of the glass core board 11 as the lower surface as an example, the height of the first metal film 31 disposed in the groove structure 12 on the first surface is at least lower than the height of the first surface (upper surface), and the height of the first metal film 31 disposed in the groove structure 12 on the second surface is at least higher than the height of the second surface (lower surface). Similarly, the height of the upper surface of the filling metal layer 33 is lower than the height of the orifice located on the upper surface of the opening portion 13, and the height of the lower surface of the filling metal layer 33 is higher than the height of the orifice located on the lower surface of the opening portion 13.
[0051] Specifically, the first metal layer 30 also includes a second metal film 32, with the first metal film 31 disposed within the first groove 121 and the second metal film 32 disposed within the second groove 122. The thickness of the first metal film 31 is less than the depth of the first groove 121, and the thickness of the second metal film 32 is less than the depth of the second groove 122. Thus, the first metal film 31 and the second metal film 32 can be respectively disposed in the first groove 121 and the second groove 122, allowing the metal circuit formed by the first metal film 31 to be embedded within the glass core plate 11 on both surfaces. This effectively prevents the metal circuit from separating from the glass core plate 11 under internal stress, improving the bonding strength between the glass core plate 11 and the metal layer.
[0052] In this embodiment, since the first metal film 31 within the groove structure 12 is at least less than the depth of the groove structure 12, a height difference can be formed between the first metal film 31 and the first surface. This height difference facilitates the subsequent filling of the insulating layer 40 onto the upper surface of the first metal film 31, providing comprehensive coverage. This also helps prevent the metal circuitry from separating from the glass core board 11 under internal stress, thus improving the bonding strength between the glass core board 11 and the metal layer. Preferably, the distance between the surface of the first metal film 31 and the first surface in the thickness direction is at least greater than 5µm, but can also be 5µm, 10µm, etc., without specific limitation.
[0053] By setting the thickness of the first metal film 31 to be less than the depth of the groove structure 12, the metal circuit formed by the first metal film 31 can be completely covered by the glass core plate 11, that is, the metal circuit is completely embedded in the glass core plate 11. Furthermore, by simultaneously setting the thickness of the first metal film 31 to be less than the depth of the groove structure 12 and the thickness of the filling metal layer 33 to be less than the depth of the opening 13, the situation of excessive stress concentration leading to delamination between the metal layer and the glass core plate 11 or cracks in the glass core plate 11 is effectively avoided, thereby improving product yield and reliability.
[0054] S104. An insulating layer with a first hollow area is formed on the surface of the glass core board, and the first hollow area is correspondingly disposed with the first metal layer.
[0055] The first hollow area 41 is set to correspond with the first metal layer 30. For example, the first hollow area 41 can be set in the area corresponding to the first metal layer 30. For example, it can be set in the area corresponding to the filling metal layer 33. Or, it can be set in the area corresponding to the first metal film 31 and the second metal film 32. The specifics are not described here.
[0056] like Figure 8 As shown, specifically, an insulating layer 40 is covered on the surface of the glass core board 11, such that the insulating layer 40 completely covers the surface of the glass core board 11, as... Figure 9 As shown, the insulating layer 40 is then etched in the area corresponding to the filling metal layer 33 to form the first hollow area 41, and finally the insulating layer 40 with the first hollow area 41 is formed.
[0057] For example, an insulating layer 40 is covered on both the first and second surfaces of the glass core board 11, such that the insulating layer 40 completely covers the first surface, the second surface, the first metal film 31, and the filler metal layer 33. Then, the insulating layer 40 is etched in the area corresponding to the filler metal layer 33 to form a first hollow area 41, and finally an insulating layer 40 with the first hollow area 41 is formed.
[0058] For example, the projection of the first hollow region 41 in the thickness direction at least partially overlaps with the projection of the filler metal layer 33 in the thickness direction. That is, the projection of the first hollow region 41 in the thickness direction can be partially or completely located within the projection of the filler metal layer 33 in the thickness direction, so that the subsequently formed second metal layer 70 is at least located within the first hollow region 41. Preferably, the projection of the first hollow region 41 in the thickness direction coincides with the projection of the filler metal layer 33 in the thickness direction, thereby enabling the subsequently formed second metal layer 70 to be completely located within the first hollow region 41.
[0059] Specifically, the projection of the insulating layer 40 in the thickness direction does not overlap at least partially with the projection of the through hole 131 in the thickness direction; and / or, the projection of the insulating layer 40 in the thickness direction does not overlap at least partially with the projection of the transverse groove structure 132 in the thickness direction.
[0060] For example, since the insulating layer 40 has a first cutout region 41, and the projection of the first cutout region 41 in the thickness direction at least partially covers the projection of the through hole 131 in the thickness direction, it can be ensured that the second metal layer 70 formed subsequently can at least cover the filling metal layer 33 located in the through hole 131, thereby improving signal transmission and semiconductor packaging effect.
[0061] For example, since the insulating layer 40 has a first cutout region 41, and the projection of the first cutout region 41 in the thickness direction at least partially covers the projection of the transverse slot structure 132 in the thickness direction, it can be ensured that the subsequently formed second metal layer 70 can at least cover the filling metal layer 33 located on the transverse slot structure 132, thereby improving signal transmission and semiconductor packaging effect.
[0062] like Figure 10 As shown, in some embodiments, after the glass core 11 is formed, a second seed layer 50 is formed on the surface of the insulating layer 40.
[0063] For example, a physical vapor deposition (PVD) process can be used to sputter a third predetermined metal onto the surface of the glass core 11 to form a second seed layer 50 on the surface of the insulating layer 40. Specifically, the third predetermined metal can be a titanium / copper or tantalum / copper alloy.
[0064] For example, a third preset metal may be sputtered onto the surface of the insulating layer 40 to form a second seed layer 50 on the surface of the insulating layer 40.
[0065] S105. A second metal layer is formed on the surface of the insulating layer having the first hollow area, the second metal layer at least partially covering the filler metal layer.
[0066] like Figures 11-12 As shown, in some embodiments, a first photoresist layer 60 is formed on the surface of the insulating layer 40. The first photoresist layer 60 has a second cutout region 61, which exposes a portion of the insulating layer 40 to the first photoresist layer 60. The projection of the second cutout region 61 in the thickness direction at least partially overlaps with the projection of the first metal thin film 31 in the thickness direction.
[0067] For example, the second metal layer 70 may include a third metal film 71 located in the first cutout region 41, a fourth metal film 72 located in the second cutout region 61, and a fifth metal film located in the first photoresist layer 60.
[0068] For example, the second metal layer 70 may include only the third metal film 71 located in the first cutout region 41 and the fifth metal film located in the first photoresist layer 60, excluding the second cutout region 61 and the fourth metal film 72 located in the second cutout region 61.
[0069] like Figure 11 As shown, by way of example, a layer of photoresist can be coated on the surface of the insulating layer 40, and the photoresist layer can be exposed and developed to form a first photoresist layer 60 having a second cutout region 61.
[0070] It should be noted that the photoresist used to form the first photoresist layer 60 can include positive photoresist and negative photoresist, etc., and is not specifically limited here. The shape of the photoresist can include undercut and topcut, and the shape of the photoresist is generally an inverted trapezoid, which can make full contact with the stripping solution and the photoresist in the subsequent process, so as to facilitate the stripping of the photoresist on the insulating layer 40 and ensure that there is no photoresist residue on the insulating layer 40 after stripping.
[0071] like Figure 12 As shown, the second metal layer 70 includes a third metal film 71 located in the first cutout region 41, a fourth metal film 72 located in the second cutout region 61, and a fifth metal film located in the first photoresist layer 60.
[0072] For example, a chemical vapor deposition (CVD) process can be used to deposit a fourth predetermined metal on the surfaces of the first cutout region 41, the second cutout region 61, and the first photoresist layer 60. Specifically, the fourth predetermined metal can be a copper, titanium / copper, or tantalum / copper alloy; preferably, the second metal layer 70 is a copper layer. This allows the second metal layer 70 to include a third metal film 71 located in the first cutout region 41, a fourth metal film 72 located in the second cutout region 61, and a fifth metal film located in the first photoresist layer 60. Finally, the first photoresist layer 60 and the fifth metal film on the first photoresist layer 60 are removed, thereby retaining the third metal film 71 located in the first cutout region 41 and the fourth metal film 72 located in the second cutout region 61.
[0073] Specifically, the third metal film 71 covers the filling metal layer 33 located in the via 131 and at least partially covers the insulating layer 40, thereby improving signal transmission and semiconductor packaging performance.
[0074] For example, since the insulating layer 40 has a first hollow area 41, and the projection of the first hollow area 41 in the thickness direction at least covers the projection of the through hole 131 in the thickness direction, the third metal film 71 located in the first hollow area 41 at least covers the filling metal layer 33 located in the through hole 131. If the first hollow area 41 is the area corresponding to the transverse groove structure 132, then the third metal film 71 located in the first hollow area 41 covers both the filling metal layer 33 located in the through hole 131 and the filling metal layer 33 located in the transverse groove structure 132.
[0075] Specifically, the fourth metal film 72 at least partially covers the insulating layer 40, thereby improving signal transmission and semiconductor packaging performance.
[0076] For example, the fourth metal film 72 can be disposed at any location on the insulating layer 40, without specific limitation herein.
[0077] Preferably, since the insulating layer 40 also has a second hollow area 61, the projection of the second hollow area 61 in the thickness direction at least partially overlaps with the projection of the first metal film 31 in the thickness direction, thus the fourth metal film 72 is located above the first metal film 31.
[0078] S106. A solder resist layer is formed on the surface of the insulating layer, the solder resist layer including a window, and a second metal layer is exposed at the window to form a solder pad.
[0079] like Figure 13 As shown, specifically, a solder resist layer 80 can be covered on the surface of the insulating layer 40 and the surface of the second metal layer 70; a window is made in the solder resist layer 80 to expose the second metal layer 70 located in the first cutout area 41 to form a solder pad, and the solder pad is surface treated to form a solderable protective layer, thereby preparing the glass substrate 100.
[0080] For example, the solder mask 80 is a protective coating covering the surface of the insulating layer 40. Its main functions include, but are not limited to, preventing solder short circuits, protecting circuits and pads, providing support and fixation, and improving electrical performance. The solder mask 80 is often referred to as the green oil layer. Essentially, it is formed on the surface of the insulating layer 40 through a negative film process, creating a window 81 that exposes the pads. The solder mask 80 is used to provide insulation protection.
[0081] For example, the solder resist layer 80 may be made of at least one of the following insulating materials: resin, solder resist varnish, dry film, etc. Understandably, the solder resist layer 80 serves to protect the glass core board 11 and prevent short circuits in the metal wiring within the glass core board 11. The material of the solder resist layer 80 has good solder resist properties.
[0082] Therefore, the glass substrate 100 prepared by the method of this application can embed the metal lines formed by the first metal thin film 31 within the glass core plate 11, thereby effectively preventing the metal lines from separating from the glass core plate 11 under the action of internal stress, improving the bonding force between the glass core plate 11 and the metal layer, and controlling the thickness of the first metal thin film 31 to be less than the depth of the groove structure 12, and the thickness of the filling metal layer 33 to be less than the depth of the opening portion 13, effectively avoiding the situation where the metal layer and the glass core plate 11 delaminate or cracks appear in the glass core plate 11 due to excessive stress concentration, thereby improving the product yield and reliability.
[0083] like Figure 13 As shown, this application also provides a glass substrate 100, which can be prepared by the above-described method for preparing a glass substrate 100. The glass substrate 100 includes a glass core 11, a first metal layer 30, an insulating layer 40, a second metal layer 70, and a solder resist layer 80.
[0084] Specifically, the glass core plate 11 has a plurality of openings 13, and the glass core plate 11 includes a first surface and a second surface opposite to each other along its thickness direction, and a groove structure 12 is formed on the first surface and / or the second surface.
[0085] For example, the glass core panel 11 has a plurality of openings 13, which can be arranged symmetrically or asymmetrically, without specific limitation here. Figure 1 As shown, the first surface can be the upper surface of the glass core plate 11, and the second surface can be the lower surface of the glass core plate 11. The opening 13 penetrates the thickness of the glass core plate 11, and one opening of the opening 13 can be located on the first surface, while the other opening of the opening 13 can be located on the second surface.
[0086] In this embodiment, the glass core plate 11 can be used to reduce thermal stress and deformation by taking advantage of its small dimensional changes during high-temperature manufacturing and operation, thereby improving the reliability of the packaging structure.
[0087] For example, the groove structure 12 may be formed only on the first surface (upper surface) of the glass core board 11; the groove structure 12 may also be formed on the second surface (lower surface) of the glass core board 11; or the groove structure 12 may be formed on both the first surface (upper surface) and the second surface (lower surface) of the glass core board 11, without any specific limitation.
[0088] For example, the cross-sectional shape of the groove structure 12 can be square, rectangular, trapezoidal, irregular, etc., and is not specifically limited here. The depth of the groove structure 12 can be arbitrary and can be set according to actual process requirements, and is not specifically limited here.
[0089] Specifically, the first metal layer 30 includes at least a first metal film 31 disposed in the groove structure 12 and a filling metal layer 33 disposed in the opening portion 13, wherein the thickness of the first metal film 31 is less than the depth of the groove structure 12 and the thickness of the filling metal layer 33 is less than the depth of the opening portion 13.
[0090] As described in the above embodiments, by setting the thickness of the first metal film 31 to be less than the depth of the groove structure 12, the metal circuit formed by the first metal film 31 can be completely covered by the glass core plate 11, that is, the metal circuit is completely embedded in the glass core plate 11. Furthermore, by simultaneously setting the thickness of the first metal film 31 to be less than the depth of the groove structure 12 and the thickness of the filling metal layer 33 to be less than the depth of the opening 13, the situation of excessive stress concentration leading to delamination between the metal layer and the glass core plate 11 or cracks in the glass core plate 11 is effectively avoided, thereby improving product yield and reliability.
[0091] Specifically, an insulating layer 40 covers the glass core 11, and the insulating layer 40 at least covers the first metal film 31 to protect the metal lines formed on the first metal film 31. A second metal layer 70 at least partially covers the filler metal layer 33, thereby improving signal transmission and semiconductor packaging performance. A solder resist layer 80 covers the insulating layer 40, and the solder resist layer 80 includes a window portion 81, at which the second metal layer 70 is exposed to form pads.
[0092] For example, the solder mask 80 is a protective coating covering the surface of the insulating layer 40. Its main functions include, but are not limited to, preventing solder short circuits, protecting circuits and pads, providing support and fixation, and improving electrical performance. The solder mask 80 is often referred to as the green oil layer. Essentially, it is formed on the surface of the insulating layer 40 through a negative film process, creating a window 81 that exposes the pads. The solder mask 80 is used to provide insulation protection.
[0093] For example, the solder resist layer 80 may be made of at least one of the following insulating materials: resin, solder resist varnish, dry film, etc. Understandably, the solder resist layer 80 serves to protect the glass core board 11 and prevent short circuits in the metal wiring within the glass core board 11. The material of the solder resist layer 80 has good solder resist properties.
[0094] In some embodiments, the glass core plate 11 has a plurality of openings 13, the glass core plate 11 includes a first surface and a second surface opposite to each other along its thickness direction, and a groove structure 12 is formed on the first surface and / or the second surface; the first metal layer 30 further includes a second metal film 32, and the first metal film 31 is disposed in the first groove 121, and the second metal film 32 is disposed in the second groove 122; wherein, the thickness of the first metal film 31 is less than the depth of the first groove 121, and the thickness of the second metal film 32 is less than the depth of the second groove 122.
[0095] For example, the glass core panel 11 has a plurality of openings 13, which can be arranged symmetrically or asymmetrically, without specific limitation. The first surface can be the upper surface of the glass core panel 11, and the second surface can be the lower surface of the glass core panel 11. The openings 13 penetrate the thickness of the glass core panel 11, and one opening of the opening 13 can be located on the first surface, while the other opening of the opening 13 can be located on the second surface.
[0096] For example, the first metal layer 30 further includes a second metal film 32, with the first metal film 31 disposed within the first groove 121 and the second metal film 32 disposed within the second groove 122. The thickness of the first metal film 31 is less than the depth of the first groove 121, and the thickness of the second metal film 32 is less than the depth of the second groove 122. Thus, the first metal film 31 and the second metal film 32 can be respectively disposed in the first groove 121 and the second groove 122, allowing the metal circuit formed by the first metal film 31 to be embedded within the glass core plate 11 on both surfaces. This effectively prevents the metal circuit from separating from the glass core plate 11 under internal stress, improving the bonding strength between the glass core plate 11 and the metal layer.
[0097] In some embodiments, the opening portion 13 includes a through hole 131 and a transverse groove structure 132 communicating with the opening of the through hole 131, wherein the groove width of the transverse groove structure 132 is greater than the diameter of the through hole 131.
[0098] For example, the through hole 131 is located in the middle of the opening portion 13 and is used to penetrate the glass core plate 11. The transverse groove structure 132 located on both sides of the through hole 131 is connected to the through hole 131, and the groove width of the transverse groove structure 132 is greater than the hole diameter of the through hole 131.
[0099] In some embodiments, the thickness of the filler metal layer 33 is at least greater than the depth of the via 131.
[0100] For example, since the opening portion 13 includes a through hole 131 and a transverse groove structure 132 communicating with the opening of the through hole 131, the filling metal layer 33 includes a metal pillar located in the through hole 131 and a metal layer located in the transverse groove structure 132. That is, the thickness of the filling metal layer 33 includes the thickness of the metal pillar located in the through hole 131 and the thickness of the metal layer located in the transverse groove structure 132. Therefore, the thickness of the filling metal layer 33 is at least greater than the depth of the through hole 131.
[0101] In some embodiments, the projection of the insulating layer 40 in the thickness direction does not at least partially overlap with the projection of the through hole 131 in the thickness direction; and / or, the projection of the insulating layer 40 in the thickness direction does not at least partially overlap with the projection of the transverse groove structure 132 in the thickness direction.
[0102] For example, since the insulating layer 40 has a first cutout region 41, and the projection of the first cutout region 41 in the thickness direction at least partially covers the projection of the through hole 131 in the thickness direction, it can be ensured that the second metal layer 70 formed subsequently can at least cover the filling metal layer 33 located in the through hole 131, thereby improving signal transmission and semiconductor packaging effect.
[0103] For example, since the insulating layer 40 has a first cutout region 41, and the projection of the first cutout region 41 in the thickness direction at least partially covers the projection of the transverse slot structure 132 in the thickness direction, it can be ensured that the subsequently formed second metal layer 70 can at least cover the filling metal layer 33 located on the transverse slot structure 132, thereby improving signal transmission and semiconductor packaging effect.
[0104] In some embodiments, the second metal layer 70 includes a third metal film 71, which covers the filler metal layer 33 located in the through hole 131 and at least partially covers the insulating layer 40.
[0105] For example, since the insulating layer 40 has a first hollow area 41, and the projection of the first hollow area 41 in the thickness direction at least covers the projection of the through hole 131 in the thickness direction, the third metal film 71 located in the first hollow area 41 at least covers the filling metal layer 33 located in the through hole 131. If the first hollow area 41 is the area corresponding to the transverse groove structure 132, then the third metal film 71 located in the first hollow area 41 covers both the filling metal layer 33 located in the through hole 131 and the filling metal layer 33 located in the transverse groove structure 132.
[0106] In some embodiments, the second metal layer 70 includes a fourth metal film 72 disposed on the insulating layer 40.
[0107] For example, the fourth metal film 72 can be disposed at any location on the insulating layer 40, without specific limitation herein.
[0108] Preferably, since the insulating layer 40 also has a second hollow area 61, and the projection of the second hollow area 61 in the thickness direction at least partially overlaps with the projection of the first metal film 31 in the thickness direction, the fourth metal film 72 is located above the first metal film 31.
[0109] It should be noted that those skilled in the art will understand that, for the sake of convenience and brevity, the embodiments corresponding to the glass core board structures described above can be referred to the embodiments of the glass core board preparation method described above, and will not be repeated here.
[0110] Therefore, the glass substrate 100 provided in this application can embed the metal lines formed by the first metal thin film 31 within the glass core plate 11, thereby effectively preventing the metal lines from separating from the glass core plate 11 under the action of internal stress, improving the bonding force between the glass core plate 11 and the metal layer, and also controlling the thickness of the first metal thin film 31 to be less than the depth of the groove structure 12, and the thickness of the filling metal layer 33 to be less than the depth of the opening portion 13, effectively avoiding the situation where the stress is too concentrated and causes the metal layer to delaminate from the glass core plate 11 or cracks to appear in the glass core plate 11, thereby improving the product yield and reliability.
[0111] like Figure 14 As shown in the figure, this application also provides a step flow diagram of a method for preparing a glass substrate.
[0112] like Figure 14 As shown, the method for preparing the glass substrate includes steps S201 to S205.
[0113] S201. A glass plate is provided, and a plurality of openings and at least one groove structure are formed on the surface of the glass plate to obtain a glass core plate.
[0114] S202. A first metal layer is formed on the surface of the glass core board. The first metal layer includes at least a first metal film disposed in the groove structure and a filling metal layer disposed in the opening.
[0115] S203. An insulating layer with a first hollow area is formed on the surface of the glass core board, and the first hollow area is correspondingly disposed with the first metal layer.
[0116] S204. A second metal layer is formed on the surface of an insulating layer having a first hollow area, the second metal layer at least partially covering the filler metal layer.
[0117] S205. A solder resist layer is formed on the surface of the insulating layer, the solder resist layer including a window, and a second metal layer is exposed at the window to form a solder pad.
[0118] In this embodiment, since the first metal film 31 is disposed within the groove structure 12, regardless of whether the thickness of the first metal film 31 is greater than or less than the depth of the groove structure 12, it can be ensured that the first metal film 31 is at least partially disposed within the groove structure 12. That is, the metal circuit formed by the first metal film 31 can be at least partially embedded within the glass core plate 11, thereby effectively preventing the metal circuit from separating from the glass core plate 11 under the action of internal stress and improving the bonding force between the glass core plate 11 and the metal layer.
[0119] like Figure 6 and Figure 7As shown, in some embodiments, after the first metal layer 30 is formed on the surface of the glass core plate 11, a portion of the first metal layer 30 is removed until the thickness of the first metal film 31 is less than the depth of the groove structure 12.
[0120] For example, if the groove structure 12 includes a first groove 121 and a second groove 122, it means that the first groove 121 is provided with a first metal film 31 and the second groove 122 is provided with a second metal film 32. Part of the first metal layer 30 is removed until the thickness of the first metal film 31 is less than the depth of the first groove 121 and the thickness of the second metal film 32 is less than the depth of the second groove 122. This allows the metal circuit formed by the first metal film 31 and the second metal film 32 to be completely embedded in the glass core board 11 on both surfaces, thereby effectively preventing the metal circuit from separating from the glass core board 11 under the action of internal stress and improving the bonding force between the glass core board 11 and the metal layer.
[0121] Specifically, the first metal layer 30 can be removed by grinding and polishing; the first metal film 31 can be etched by chemical etching until the thickness of the first metal film 31 is less than the depth of the groove structure.
[0122] For example, such as Figure 6 As shown, the first metal layer 30 can be removed first by grinding and polishing until the distance between the surface of the first metal layer 30 and the first and second surfaces in the thickness direction is a preset distance, such as 5µm, to ensure that the portion of the first metal layer 30 above the surface of the glass core board 11 is basically removed, leaving only a thinner first metal layer 30. Figure 7 As shown, after removing most of the first metal layer 30, the first metal film 31 is etched by chemical etching until the thickness of the first metal film 31 is less than the depth of the groove structure 12. This allows the metal circuit formed by the first metal film 31 to be completely embedded in the glass core plate 11, thereby effectively preventing the metal circuit from separating from the glass core plate 11 under the action of internal stress and improving the bonding force between the glass core plate 11 and the metal layer.
[0123] It should be noted that the relevant embodiments of steps S201-S205 can be referred to the relevant embodiments of steps S101-S106, and will not be repeated here.
[0124] In this embodiment, by placing the first metal film 31 within the groove structure 12 on the surface of the glass core board 11, the metal circuit formed by the first metal film 31 can be embedded within the glass core board 11. This effectively prevents the metal circuit from separating from the glass core board 11 under internal stress, improves the bonding force between the glass core board 11 and the metal layer, and thus improves the product yield, reliability, and packaging effect. Furthermore, this preparation method does not require melting of glass materials, and the process is simple and low-cost.
[0125] like Figure 15 As shown in the embodiments of this application, an electronic device 1000 is also proposed, which includes a glass substrate 100 as described in any embodiment of this application. The electronic device 1000 has a better packaging effect and is less prone to cracking of the glass core board, resulting in a higher product yield and reliability.
[0126] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection. They can refer to a mechanical connection or an electrical connection. They can refer to a direct connection or an indirect connection through an intermediate medium, and they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.
[0127] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0128] The foregoing disclosure provides many different embodiments or examples for implementing different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described above. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.
[0129] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with an embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0130] The above embodiments are merely preferred embodiments of this application and should not be construed as limiting the scope of protection of this application. Any non-substantial changes and substitutions made by those skilled in the art based on this application shall fall within the scope of protection claimed by this application.
Claims
1. A glass substrate, characterized in that, The glass substrate includes: A glass core board having a plurality of openings, the glass core board including a first surface and a second surface opposite to each other along its thickness direction, and a groove structure being formed on the first surface and / or the second surface; The first metal layer includes at least a first metal film disposed within the groove structure and a filling metal layer disposed within the opening, wherein the thickness of the first metal film is less than the depth of the groove structure and the thickness of the filling metal layer is less than the depth of the opening. An insulating layer covering the glass core, and the insulating layer at least covering the first metal film; A second metal layer, which at least partially covers the filler metal layer; A solder resist layer covering the insulating layer, the solder resist layer including a window, wherein a second metal layer is exposed at the window to form a solder pad.
2. The glass substrate according to claim 1, characterized in that, The groove structure includes a first groove formed on the first surface and a second groove formed on the second surface; The first metal layer further includes a second metal film, wherein the first metal film is disposed in the first groove and the second metal film is disposed in the second groove; Wherein, the thickness of the first metal film is less than the depth of the first groove, and the thickness of the second metal film is less than the depth of the second groove.
3. The glass substrate according to claim 1, characterized in that, The opening includes a through hole and a transverse groove structure communicating with the opening of the through hole, wherein the width of the transverse groove structure is greater than the diameter of the through hole.
4. The glass substrate according to claim 3, characterized in that, The projection of the insulating layer in the thickness direction does not at least partially overlap with the projection of the through-hole in the thickness direction; and / or, The projection of the insulating layer in the thickness direction does not overlap with the projection of the transverse groove structure in the thickness direction at least partially.
5. The glass substrate according to claim 3, characterized in that, The second metal layer includes a third metal film that covers the fill metal layer located in the through hole and at least partially covers the insulating layer.
6. The glass substrate according to claim 3, characterized in that, The second metal layer includes a fourth metal film disposed on the insulating layer.
7. The glass substrate according to claim 3, characterized in that, The thickness of the filling metal layer is at least greater than the depth of the through hole.
8. A method for preparing a glass substrate, characterized in that, The method includes: A glass core board is prepared by forming a plurality of openings and at least one groove structure on the surface of a glass plate. A first metal layer is formed on the surface of the glass core plate. The first metal layer includes at least a first metal film disposed in the groove structure and a filling metal layer disposed in the opening. Remove part of the first metal layer until the thickness of the first metal film is less than the depth of the groove structure and the thickness of the filling metal layer is less than the depth of the opening. An insulating layer with a first hollow area is formed on the surface of the glass core plate, and the first hollow area is disposed corresponding to the first metal layer. A second metal layer is formed on the surface of the insulating layer having the first hollow area, the second metal layer at least partially covering the filler metal layer; A solder resist layer is formed on the surface of the insulating layer, the solder resist layer including a window, and a second metal layer is exposed at the window to form a solder pad.
9. The method according to claim 8, characterized in that, The step of removing a portion of the first metal layer until the thickness of the first metal film is less than the depth of the groove structure and the thickness of the filling metal layer is less than the depth of the opening includes: The first metal layer is removed by grinding and polishing. The first metal film and the filling metal layer are etched using chemical etching until the thickness of the first metal film is less than the depth of the groove structure and the thickness of the filling metal layer is less than the depth of the opening.
10. A method for preparing a glass substrate, characterized in that, The method includes: A glass core board is prepared by forming a plurality of openings and at least one groove structure on the surface of a glass plate. A first metal layer is formed on the surface of the glass core plate. The first metal layer includes at least a first metal film disposed in the groove structure and a filling metal layer disposed in the opening. An insulating layer with a first hollow area is formed on the surface of the glass core plate, and the first hollow area is disposed corresponding to the first metal layer. A second metal layer is formed on the surface of the insulating layer having the first hollow area, the second metal layer at least partially covering the filler metal layer; A solder resist layer is formed on the surface of the insulating layer, the solder resist layer including a window, and a second metal layer is exposed at the window to form a solder pad.
11. The method according to claim 1, characterized in that, The process of forming multiple openings and at least one groove structure on the surface of the glass plate to obtain a glass core plate includes: A glass core board is produced by forming multiple openings and at least one groove structure on the surface of the glass plate using laser-modified etching.
12. The method according to claim 1, characterized in that, After forming the first metal layer on the surface of the glass core plate, the method further includes: Remove a portion of the first metal layer until the thickness of the first metal film is less than the depth of the groove structure.
13. The method according to claim 12, characterized in that, Removing a portion of the first metal layer until the thickness of the first metal film is less than the depth of the groove structure includes: The first metal layer is removed by grinding and polishing. The first metal film is etched using chemical etching until the thickness of the first metal film is less than the depth of the groove structure.
14. The method according to claim 1, characterized in that, The formation of a second metal layer on the surface of the insulating layer having the first perforated area includes: A first photoresist layer is formed on the surface of the insulating layer. The first photoresist layer has a second cutout area, which exposes a portion of the insulating layer to the first photoresist layer. A second metal layer is formed, the second metal layer comprising a third metal film located in the first cutout region, a fourth metal film located in the second cutout region, and a fifth metal film located in the first photoresist layer; Remove the first photoresist layer and the fifth metal thin film.
15. An electronic device, characterized in that, The electronic device includes a glass substrate as described in any one of claims 1-7, or the electronic device includes a glass substrate prepared by the method for preparing a glass substrate as described in any one of claims 8-14.