Micro-electro-mechanical optical quantum digital low-light device and packaging method thereof

Abstract

The invention discloses a micro-electro-mechanical optical quantum digital low-light device and a packaging method thereof. The micro-electro-mechanical optical quantum digital low-light device comprises a cathode, a tube shell precursor and a tube shell rear body, the MCP is packaged in the tube shell precursor; a CMOS circuit is arranged in the tube shell rear body; an HTCC base is arranged at the plugging end of the tube shell rear body; when the device is used, voltage is respectively applied to the cathode, the MCP input, the MCP output and the electrode of the CMOS circuit, the voltage difference between any two adjacent electrodes is 50-3000V, the device is low in power consumption, high in image frame frequency and low in working illumination, the night vision requirement is met, and meanwhile, the image output meeting the frame frequency requirement can be realized.

Description

Technical Field

[0001] This application relates to the field of night vision equipment technology, and in particular to a microelectromechanical optoelectronic quantum digital micro-light device and its packaging method. Background Technology

[0002] The functional requirements of existing night vision equipment are to meet the demands of digital and information-based use, enabling information sharing and close collaboration in various environments. Most existing low-light night vision devices use image intensifiers as direct-view devices, which severely limits image and video transmission speed, preventing the real-time, long-distance transmission and use of acquired image information.

[0003] The information disclosed in the background section is intended only to enhance the understanding of the overall background of the invention and should not be construed as an admission or in any way implying that such information constitutes prior art known to those skilled in the art. Summary of the Invention

[0004] This application addresses the aforementioned technical problems by providing a microelectromechanical optoelectronic quantum digital micro-optical device and its packaging method. It employs photocathode electron generation, MCP electron gain, and CMOS circuit electronic readout technology, and utilizes standard CMOS processes to develop an electronic readout circuit that replaces the phosphor screen in existing image intensifiers, thereby realizing digital readout of the micro-optical device.

[0005] This application provides a microelectromechanical optoelectronic quantum digital micro-light device, comprising: a cathode, a pre-tube housing, and a post-tube housing; The MCP is encapsulated in the front of the casing; the CMOS circuit is placed in the back of the casing. An HTCC base is provided on the insertion end of the rear body of the tube shell; During use, voltage is applied to the electrodes of the cathode, MCP input, MCP output and CMOS circuit respectively, and the voltage difference between any two adjacent electrodes is between 50 and 3000V. The cathode is used to receive photoelectrons generated after irradiation; the MCP is used to perform electronic gain on the obtained photoelectron signal; and the CMOS is used to read out the digital signal and generate an image.

[0006] Preferably, the microelectromechanical optoelectronic quantum digital low-light device can realize the output of digital images, with an operating illuminance of ≤10. -4 Lx; Frame rate of the resulting image: ≥100 Hz; Power consumption required for device operation: ≤250 mW.

[0007] Preferably, the cathode includes: a lens and a thin film; the thin film is disposed on the inner surface of the lens and close to the tube shell front body; the thin film is used to generate electrons through the external electrostatic effect in low-light environment.

[0008] Preferably, the proximity distance between the cathode and the MCP input terminal in the tube shell precursor is between 0.01 and 5 mm.

[0009] Preferably, the tube shell precursor includes: MCP, cathode ring, ceramic tube shell, MCP holder, and first isolation ring; the MCP is encapsulated in the MCP holder, and the upper and lower end faces of the MCP holder are electrically connected to the electrodes respectively. A cathode ring is provided on the first end face of the ceramic tube shell, and the cathode is encapsulated inside the first end face of the ceramic tube shell; an electrode is provided on the cathode ring and is electrically connected to the cathode. A first isolation ring is provided on the second end face of the ceramic tube shell.

[0010] Preferably, the rear body of the casing includes: a second isolation ring, an HTCC base, and a CMOS circuit, wherein the CMOS circuit is mounted on the second isolation ring; the second isolation ring is disposed on the HTCC base; and the electrode electrically connected to the CMOS circuit is disposed on the second isolation ring.

[0011] Preferably, the lens is made of glass; the cathode sensitivity is between 300 and 3000 uA / lm.

[0012] Preferably, the HTCC base includes: pads and multiple pins; multi-layer wiring is provided on the end face of the pads; the pads and pins are connected by multi-layer wiring.

[0013] Preferably, the rear proximity distance between the CMOS circuit and the MCP output terminal is between 0.01 and 5 mm.

[0014] Another aspect of this application provides a packaging method for the microelectromechanical-optical-quantum digital micro-optical device as described above, comprising the following steps: Step S1: Install the CMOS circuit and gold wire bonding on the back of the casing to obtain the first device; Step S2: Complete the assembly of the MCP in the front body of the tube shell to obtain the second device; Step S3: Use helium to check for leaks in the first and second devices respectively, requiring that the vacuum degree of both the first and second devices be ≤1E-5Pa; Step S4: Weld the first isolation ring onto the first device, weld the second isolation ring onto the second device, and perform helium leak detection on each device, requiring a void degree ≤1E-5Pa, to obtain the third device and the tube shell body; Step S5: Evacuate to ≤1E-5Pa, deposit a cathode film on the inner surface of the lens to obtain the cathode, and complete the encapsulation of the cathode and the third device by soldering in a vacuum environment to obtain the shell precursor. The cavity of the obtained shell precursor is in a vacuum state. Encapsulate the shell precursor and the shell rear body. Step S6: Set electrodes at the cathode, MCP input, MCP output and CMOS circuit where voltage needs to be applied respectively. The voltage difference between any two adjacent electrodes is between 50 and 3000V to obtain a microelectromechanical photonic quantum detector. The voltage that can be applied to the obtained microelectromechanical photonic quantum detector includes DC and AC.

[0015] The beneficial effects that this application can produce include: 1) The microelectromechanical optoelectronic quantum digital low-light device provided in this application adopts a photocathode electron generation + MCP electron gain + CMOS circuit electron readout structure to achieve high vacuum and high cleanliness integrated packaging manufacturing, thereby realizing digital image output. The output image signal is MIPI or USB, and the working illuminance is ≤10. -4 Lx; Frame rate of the obtained image: ≥100 Hz; Power consumption required for the device to operate: ≤250 mW. This device has low power consumption, high image frame rate, and low operating illumination, meeting night vision requirements while also achieving image output that meets frame rate requirements. Attached Figure Description

[0016] Figure 1 A schematic diagram of the principle structure of a microelectromechanical-optical-quantum digital micro-optical device in at least one embodiment provided in this application; Figure 2 Physical diagram of the microelectromechanical-optical-quantum digital micro-optical device in at least one embodiment provided in this application; Figure 3 A schematic diagram of the cathode structure in at least one embodiment provided in this application; Figure 4 A schematic diagram of the shell precursor structure in at least one embodiment provided in this application; Figure 5 A schematic diagram of the shell rear body structure in at least one embodiment provided in this application; Figure 6 A schematic front cross-sectional view of a microelectromechanical-optical-quantum digital micro-optical device in at least one embodiment provided in this application; Figure 7 The images provided in this application are of Embodiment 1 and Comparative Example 1, where a is Embodiment 1; b is Comparative Example 1; and c is Comparative Example 2. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0018] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0019] Technical means not detailed in this application and not used to solve the technical problems of this application are all set according to common general knowledge in the field, and multiple common general knowledge setting methods can be implemented.

[0020] See Figures 1-6 The microelectromechanical optoelectronic quantum digital micro-optical device provided in this application includes: a cathode, a pre-shell body, and a rear-shell body; an MCP (microchannel plate) is disposed in the pre-shell body; a CMOS (complementary metal-oxide-semiconductor) circuit is disposed in the rear-shell body; the cathode is a lens used to generate photoelectrons; the MCP is used to generate electronic gain; and the CMOS is used to read out electrons and generate digital signals for image generation. The cathode includes a lens and thin films of multi-alkali, nano-metal, quantum, and third-generation semiconductor materials attached to the inner surface of the lens, which generate electrons through the external electrostatic effect in a low-light environment with low illumination. The tube housing includes: an MCP, a cathode ring, a ceramic tube housing, an MCP holder, and a first isolation ring. The MCP is encapsulated in the MCP holder, and the upper and lower end faces of the MCP holder are electrically connected to electrodes to apply the high voltage required for imaging to the input and output ends of the MCP. The cathode ring is disposed within the ceramic tube housing of the MCP holder, which houses the MCP. The cathode ring is disposed on the first end face of the ceramic tube housing, and the first isolation ring is disposed on the second end face of the ceramic tube housing. The cathode is installed inside the cathode ring. Electrodes are disposed on the cathode ring and electrically connected to the cathode to apply voltage to the cathode and the MCP.

[0021] The rear housing includes: a second isolation ring, an HTCC base, and a CMOS circuit. The CMOS circuit is mounted on the second isolation ring, which is located on the HTCC base. The CMOS circuit includes: multiple collector cell arrays, which form a circuit. The CMOS circuit is used for electron collection and readout. Electrodes electrically connected to the CMOS circuit are located on the second isolation ring.

[0022] This structure enables imaging in low-light environments and achieves efficient transmission of image information.

[0023] In one specific embodiment, the lens is made of glass and is mainly used to support and fabricate multi-alkali or third-generation cathodes to ensure the generation of photoelectrons; In one specific embodiment, the cathode sensitivity used is between 300 and 3000 μA / lm; In one specific embodiment, the MCP clamp is provided with an MCP input electrode and an MCP output electrode to apply voltage; In one specific embodiment, during device assembly, it is ensured that the front proximity distance between the cathode and the MCP input terminal is between 0.01 and 5 mm; In one specific embodiment, the HTCC base behind the casing is used to output electrical signals; the HTCC base is made using a multilayer ceramic co-firing process, and the HTCC base includes: pads and multiple pins; multilayer wiring is provided on the end face of the pads; the pads and pins are connected through multilayer wiring; In one specific embodiment, the rear proximity distance between the CMOS circuit and the MCP output terminal is 0.01. Between ~5mm.

[0024] Another aspect of this application provides a packaging method for microelectromechanical-optical-quantum digital micro-optical devices, comprising the following steps: Step S1: Install the CMOS circuit and gold wire bonding on the back of the casing to obtain the first device; Step S2: Complete the assembly of the MCP in the front body of the tube shell to obtain the second device; Step S3: Use helium to check for leaks in the first and second devices respectively, requiring that the vacuum degree of both the first and second devices be ≤1E-5Pa; Step S4: Weld the first isolation ring onto the first device, weld the second isolation ring onto the second device, and perform helium leak detection on each device, requiring a void degree ≤1E-5Pa, to obtain the third device and the tube shell body; Step S5: Evacuate to below ≤1E-5Pa, deposit a cathode film on the inner surface of the lens to obtain the cathode, and complete the encapsulation of the cathode and the third device by soldering in a vacuum environment to obtain the tube shell precursor. The entire process is carried out in a high vacuum chamber. Finally, the tube shell precursor and the tube shell rear body are welded in the chamber.

[0025] Step S6: Set electrodes at the cathode, MCP input, MCP output and CMOS circuit where voltage needs to be applied respectively. The voltage difference between any two adjacent electrodes is between 50 and 3000V to obtain a microelectromechanical photonic quantum detector. The voltage that can be applied to the obtained microelectromechanical photonic quantum detector includes DC and AC.

[0026] Employing high-vacuum, high-cleanliness packaging technology, a microelectromechanical quantum detector is developed that integrates the cathode, MCP, and CMOS circuits to achieve photon counting imaging.

[0027] The microelectromechanical-optical-quantum digital micro-optical device provided in this application has the following characteristics: 1) High vacuum and high cleanliness packaging technology: The packaging is carried out in a high vacuum environment to ensure that the vacuum degree of the device cavity after packaging is ≤1E-5Pa; including the welding of various parts into the shell front body and the shell back body, the manufacturing of the cathode and the welding between the shell front body and the shell back body are all carried out in a high vacuum and high cleanliness environment, and the device cavity after packaging is also in a high vacuum and high cleanliness state.

[0028] 2) The photocathode generates electrons through the photoelectric effect, the MCP generates a large number of electrons through electron collision ionization, thus multiplying the electrons. The CMOS circuit collects, stores and reads out electrons a thousand times.

[0029] 3) The HTCC base at the bottom of the device is equipped with pins, which facilitates the insertion of the device into the corresponding chassis module during use. The electrical signal of the pins will be converted into a digital image by the chassis module to complete the output. 4) The voltage that can be applied to the obtained device includes DC and AC. The voltage needs to be applied to the electrodes of the cathode, MCP input, MCP output and CMOS circuit. The voltage difference between any two adjacent electrodes is between 50V and 3000V, which can realize imaging in low-light environment. Example

[0030] The microelectromechanical-optical-quantum digital micro-optical device provided in this application is assembled according to the packaging method provided in this application. Under an illumination of 10... -5 The imaging effect under Lx conditions is shown in Figure a. Comparative Example 1 The difference from Example 1 is that an image intensifier is used at an illuminance of 10. -5 Simulated image imaging in an Lx environment, with the image intensifier operating at an illumination of 10. -5 The imaging effect under Lx conditions is shown in Figure b.

[0031] Comparative Example 2 The difference from Example 1 is that a low-light CMOS is used at an illumination of 10 -3 Simulated image imaging in an Lx environment, with the image intensifier operating at an illumination of 10. -3 Imaging in an Lx environment cannot yield an image.

[0032] The imaging results of Example 1 and Comparative Examples 1-2 are shown in Table 1.

[0033] Table 1 Summary of Results of Examples and Comparative Examples

[0034] Figure 7The images are obtained by comparing the devices of Example 1 (a), Comparative Example 1 (b), and Comparative Example 2 (c). It can be seen from the comparison that although all images can achieve imaging, the device provided in this application has higher clarity and higher frame rate.

[0035] From the table above and Figure 7 It is understood that the device provided in this application can achieve 10 -5 Outputting digital images at Lx, working illuminance: ≤10 -5 Lx; The resulting image has a high frame rate: ≥100 Hz; The power consumption required for device operation: ≤250 mW.

[0036] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A microelectromechanical-optical-quantum digital micro-optical device, characterized in that, include: Cathode, tube front body, tube rear body; MCP is encapsulated in the body before the casing; The CMOS circuit is located inside the casing. An HTCC base is provided on the insertion end of the rear body of the tube shell; During use, voltage is applied to the electrodes of the cathode, MCP input, MCP output and CMOS circuit respectively, and the voltage difference between any two adjacent electrodes is between 50 and 3000V. The cathode is used to receive photoelectrons generated after irradiation; the MCP is used to perform electronic gain on the obtained photoelectron signal; and the CMOS is used to read out the digital signal and generate an image.

2. The microelectromechanical-optical-quantum digital micro-optical device according to claim 1, characterized in that, Microelectromechanical-optical-quantum digital low-light devices can realize digital image output with an operating illuminance of ≤10 lux. -4 Lx; Frame rate of the resulting image: ≥100 Hz; Power consumption required for device operation: ≤250 mW.

3. The microelectromechanical-optical-quantum digital micro-optical device according to claim 1, characterized in that, The cathode includes: Lenses, thin films; The thin film is disposed on the inner surface of the lens and is located close to the front of the tube housing; Thin film materials include multi-base materials, nano-metals, quantum materials, and third-generation semiconductors, covering the spectral range of visible light, short-wave infrared, infrared, terahertz, and X-rays. Thin films are used to generate electrons through the external electrostatic effect in low-light environments.

4. The microelectromechanical-optical-quantum digital micro-optical device according to claim 3, characterized in that, The proximity distance between the cathode and the MCP input end in the tube shell is between 0 and 5 mm; the MCP input end can be directly bonded or adhered to the above-mentioned thin film and lens to achieve direct connection between the MCP input end and the cathode thin film, with a proximity distance of 0 mm.

5. The microelectromechanical-optical-quantum digital micro-optical device according to claim 1, characterized in that, The tube shell precursor includes: MCP, cathode ring, ceramic tube shell, MCP holder, and first isolation ring; the MCP is encapsulated in the MCP holder, and the upper and lower end faces of the MCP holder are electrically connected to the electrodes respectively. A cathode ring is provided on the first end face of the ceramic tube shell, and the cathode is encapsulated inside the first end face of the ceramic tube shell; an electrode is provided on the cathode ring and is electrically connected to the cathode. A first isolation ring is provided on the second end face of the ceramic tube shell.

6. The microelectromechanical-optical-quantum digital micro-optical device according to claim 1, characterized in that, The rear body of the casing includes: a second isolation ring, an HTCC base, and a CMOS circuit, with the CMOS circuit mounted on the second isolation ring; the second isolation ring is disposed on the HTCC base; and electrodes electrically connected to the CMOS circuit are disposed on the second isolation ring. CMOS circuits include types such as metal array electrodes, CMOS chips, germanium silicon chips, and indium gallium arsenide chips.

7. The microelectromechanical-optical-quantum digital micro-optical device according to claim 1, characterized in that, The lens is made of glass; the cathode sensitivity is between 300 and 3000 uA / lm.

8. The microelectromechanical-optical-quantum digital micro-optical device according to claim 1, characterized in that, The HTCC base includes pads and multiple pins; multi-layer wiring is provided on the pad end face; the pads and pins are connected by multi-layer wiring.

9. The microelectromechanical-optical-quantum digital micro-optical device according to claim 1, characterized in that, The rear proximity distance between the CMOS circuit and the MCP output terminal is between 0 and 5 mm; The MCP output terminal can be directly bonded or glued to CMOS circuits, metal array electrodes, etc., to achieve direct connection between the MCP output terminal and CMOS circuits, metal array electrodes, etc., with a close proximity distance of 0mm.

10. A packaging method for the microelectromechanical-optical-quantum digital micro-optical device as described in claims 1-9, characterized in that, Includes the following steps: Step S1: Install the CMOS circuit and gold wire bonding on the back of the casing to obtain the first device; Step S2: Complete the assembly of the MCP in the front body of the tube shell to obtain the second device; Step S3: Use helium to check for leaks in the first and second devices respectively, requiring that the vacuum degree of both the first and second devices be ≤1E-5Pa; Step S4: Weld the first isolation ring onto the first device, weld the second isolation ring onto the second device, and perform helium leak detection on each device, requiring a void degree ≤1E-5Pa, to obtain the third device and the tube shell body; Step S5: Evacuate to ≤1E-5Pa, deposit a cathode film on the inner surface of the lens to obtain the cathode, and complete the encapsulation of the cathode and the third device by soldering in a vacuum environment to obtain the shell precursor. The cavity of the obtained shell precursor is in a vacuum state. Encapsulate the shell precursor and the shell rear body. Step S6: Set electrodes at the cathode, MCP input, MCP output and CMOS circuit where voltage needs to be applied respectively. The voltage difference between any two adjacent electrodes is between 50 and 3000V to obtain a microelectromechanical photonic quantum detector. The voltage that can be applied to the obtained microelectromechanical photonic quantum detector includes DC and AC.

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