Pulse power supply power assembly, wafer bearing device and semiconductor process equipment

Abstract

The invention provides a pulse power supply power assembly, a wafer bearing device and semiconductor process equipment, and the device comprises a board card which is provided with a first board surface and a second board surface which are opposite to each other; the power tube is arranged on the first plate surface; the cooling device is arranged on the board card, is positioned on one side facing the first board surface, and is in heat conduction connection with the power tube; the dissipation element is a patch element, is arranged on the first plate surface and is in heat conduction connection with the cooling device; and the common mode inductor is arranged on the second board surface, and a secondary side cable of the common mode inductor penetrates through the board card and is electrically connected with the dissipation element. In the above structure, the common mode inductor, the power tube and the cooling device are respectively arranged at two sides of the board card, so that the optimization of the structure layout of the pulse power supply power assembly can be realized, and the pulse power supply power assembly can be arranged in the internal space of semiconductor process equipment; the dissipation element matched with the common mode inductor is a patch element with a small size, can be arranged on the side where the cooling device is located and is cooled by the cooling device, and the occurrence of EMI in the internal space of the semiconductor process equipment is avoided.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, specifically to a pulse power component wafer carrier device and semiconductor process equipment. Background Technology

[0002] In semiconductor process equipment, due to certain process requirements, there are multiple components with different powers that can generate electromagnetic waves located in the same space. This can lead to high-frequency electromagnetic interference (EMI). Therefore, it is necessary to set up a filter module to suppress high-frequency noise. However, due to the size and structural layout of existing filter modules, they are not suitable for installation and use in the internal space of semiconductor process equipment. Summary of the Invention

[0003] In view of this, this application provides a pulsed power supply component that can suppress high-frequency noise within the internal space of semiconductor process equipment, thereby preventing the occurrence of EMI within the internal space. Furthermore, this application also provides a semiconductor process equipment incorporating the aforementioned pulsed power supply component.

[0004] To achieve the above objectives, this application provides the following technical solution:

[0005] A pulse power supply component, comprising:

[0006] The circuit board has a first plate surface and a second plate surface arranged opposite to each other;

[0007] The power transistor is disposed on the first board surface;

[0008] A cooling device is disposed on one side of the first plate facing the board and is thermally connected to the power tube;

[0009] The dissipative element is a surface-mount element, which is disposed on the first plate surface and is thermally connected to the cooling device;

[0010] A common-mode inductor is disposed on the second board surface, and the secondary cable of the common-mode inductor passes through the board and is electrically connected to the dissipative element.

[0011] Optionally, in the above-mentioned pulse power supply assembly, there is a gap between the cooling device and the first plate surface, and the dissipation element is a surface mount resistor disposed in the gap.

[0012] Optionally, in the above-mentioned pulse power supply component, the first plate surface is further provided with a heat sink for dissipating heat from the power transistor, and the cooling device is thermally connected to the heat sink.

[0013] Optionally, in the above-mentioned pulse power supply component, the dissipation element is a semiconductor cooling chip, and is at least thermally connected to the heat sink.

[0014] Optionally, in the above-mentioned pulse power supply component, the semiconductor cooling chip is disposed between the heat sink and the cooling device, and is thermally connected to both the heat sink and the cooling device.

[0015] Optionally, the above-mentioned pulse power supply component also includes a heat-conducting element that thermally connects the chip resistor and the cooling device.

[0016] Optionally, in the above-mentioned pulse power supply component, the heat-conducting element includes a ceramic sheet and a thermally conductive silicon pad, wherein the thickness of the ceramic sheet ranges from 0.5 to 1 mm, and the thermal conductivity of the thermally conductive silicon pad ranges from 0.1 to 2 W / m*k.

[0017] Optionally, in the above-mentioned pulse power supply component, the resistance value of the chip resistor is in the range of 10Ω to 100Ω.

[0018] Optionally, in the above-mentioned pulse power supply component, the common-mode inductor includes:

[0019] Toroidal core;

[0020] The primary side cable is a two-strand wire, wound around one side of the toroidal magnetic core;

[0021] The secondary cable is a single-strand wire, wound around the other side of the annular magnetic core, and its lead-out end is electrically connected to the dissipative element.

[0022] Optionally, in the above-mentioned pulse power supply component, the ratio of the number of turns of the primary side cable wound on the annular magnetic core to the number of turns of the secondary side cable wound on the annular magnetic core is 1:2.

[0023] Optionally, in the above-mentioned pulse power supply component, the permeability of the toroidal magnetic core ranges from 10 to 1000, the specific loss coefficient at 1MHz ranges from 10 to 200, the specific loss coefficient at 15MHz ranges from 200 to 1000, the temperature coefficient ranges from 200 to 100, the resistivity ranges from 10^5 to 10^7, the saturation magnetic flux density ranges from 100 to 600, the remanent magnetic flux density ranges from 100 to 500, the coercivity ranges from 100 to 500, the Curie temperature ranges from 300 to 1000, and the operating frequency ranges from 10MHz to 100MHz.

[0024] And / or,

[0025] The diameter of a single conductor in the primary side cable and the secondary side cable ranges from 0.5 to 1 mm, and the temperature resistance is above 180℃.

[0026] And / or,

[0027] The primary side cable is wound 2 to 5 turns on one side of the toroidal magnetic core, and the secondary side cable is wound 4 to 10 turns in either the forward or reverse direction on the other side of the toroidal magnetic core.

[0028] Optionally, the aforementioned pulse power supply assembly further includes a transformer and a digital isolator disposed on the second board and electrically connected to the primary side cable.

[0029] Optionally, in the above-mentioned pulse power supply component, the cooling device includes a cooling block, and the cooling block has a flow channel for the flow of coolant.

[0030] Furthermore, the same cooling block is connected to multiple boards so that the dissipative components on each board can be cooled.

[0031] A wafer carrier device includes a chuck base, a chuck, a pulse signal generator, and the aforementioned pulse power supply assembly; wherein,

[0032] The chuck is provided with electrodes, the chuck is used to carry the wafer, and is disposed on the chuck base to form an accommodating space with the chuck base, and the accommodating space is provided with the pulse signal generator, the pulse power supply component and electrodes;

[0033] The pulse signal generator is used to generate a pulse square wave signal, and the pulse power supply component is used to amplify the pulse square wave signal and feed it into the electrode.

[0034] A semiconductor process apparatus includes a chamber body and the aforementioned pulse power supply component disposed within the chamber body;

[0035] It may include a chamber body and the aforementioned wafer carrier disposed within the chamber body.

[0036] The pulse power supply component provided in this application places the common-mode inductor and the power transistor that needs to be cooled on two opposite sides of the circuit board. This allows the common-mode inductor, power transistor, and cooling device to be located on opposite sides of the circuit board, thus optimizing the structural layout of the pulse power supply component and enabling it to be placed within the internal space of semiconductor process equipment. Furthermore, a dissipative element that works with the common-mode inductor to suppress high-frequency noise is placed on the side where the cooling device is located. Since this dissipative element is a small surface-mount component, it can be placed on the side where the cooling device is located (i.e., the first board surface) while working with the common-mode inductor. This allows the cooling device to cool the dissipative element, enabling the heat generated by the common-mode inductor in suppressing high-frequency noise to dissipate quickly. This ensures that the common-mode inductor has a good suppression effect on high-frequency noise and avoids the occurrence of EMI within the internal space of semiconductor process equipment. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0038] Figure 1 A schematic diagram of the structure of a PWM signal generator and its related components within an accommodating space;

[0039] Figure 2 A partial structural diagram of the board, cooling device, and common mode inductor provided in the embodiments of this application;

[0040] Figure 3 A schematic diagram showing the structure of the circuit board, cooling device, common mode inductor, dissipative components, and heat-conducting components.

[0041] Figure 4 A schematic diagram showing the structure of the circuit board, cooling device, common mode inductor, dissipative components, power transistor, and thermoelectric cooler.

[0042] Figure 5 This is a schematic diagram of a common-mode inductor.

[0043] Figure 6 A schematic diagram of the structure of the isolation device on the board;

[0044] Figure 7 This is the schematic diagram of a noise dissipation circuit.

[0045] exist Figures 1-7 middle:

[0046] 1-PWM signal generator, 2-pulse power supply component, 3-pulse output component, 4-base, 5-interface panel, 6-board, 7-power transistor, 8-cooling device, 9-dissipative component, 10-common mode inductor, 11-thermal conductive component, 12-heat sink, 13-semiconductor cooling chip, 14-isolation device, 15-insulating ring;

[0047] 101-Toroidal core, 102-Primary side cable, 103-Secondary side cable;

[0048] 1021 - First end, 1022 - Second end;

[0049] 1031 - Third end, 1032 - Fourth end. Detailed Implementation

[0050] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0051] In semiconductor process equipment, the bias system of a semiconductor etching machine has a single-peak ion energy power supply to provide bias voltage, and requires a multi-channel synchronously adjustable pulse signal generator (i.e., PWM signal generator 1) to generate multi-channel complementary pulse waves with a maximum frequency of 50MHz, a minimum pulse width of 5ns, adjustable phase between different channels, pulse width and phase adjustment accuracy of less than 1ns, and controllable envelope pulses. The PWM signal generator 1 and its related components need to be deployed as small components in the space below the chuck inside the semiconductor etching machine, so one of its requirements is small size. Furthermore, the single-peak ion energy power supply generates significant electromagnetic interference, therefore it also needs to have anti-interference capabilities.

[0052] like Figure 1 As shown, the components associated with the PWM signal generator 1 include the pulse power supply component 2 and the pulse output component 3. The PWM signal generator 1 generates a high-frequency pulse square wave, which, after Fourier expansion, contains a large number of high-order harmonics (e.g., 1MHz expands to 2MHz, 4MHz, 20MHz, 200MHz, etc.). The entire pulse circuit, including the electronic components of the pulse power supply component 2 and the pulse output component 3, has a certain parasitic inductance. If placed outside the semiconductor etching machine, the inductive reactance at different frequencies will vary, resulting in inconsistent attenuation and waveform distortion, thus interfering with the process. Therefore, it is necessary to place these components within the chuck base of the semiconductor etching machine. Figure 1In order to fully demonstrate the layout of the pulse power supply component 2, the entire structure of the chuck base is not shown. Instead, only the base 4 of the chuck base and the inner cavity formed by the chuck are shown, and it is located directly below the chuck. This can greatly reduce parasitic inductance. However, it will put the sensitive element (i.e., the PWM signal generator 1) and the interference source (i.e., the pulse power supply component 2) in the same environment. In the same environment, high-frequency noise will interfere with the normal operation of the PWM signal generator 1 along the signal coaxial cable. Therefore, anti-interference measures need to be taken, i.e., a filtering module needs to be set up.

[0053] The filtering module in the pulse power supply component can be a common-mode inductor. A common-mode inductor is an inductor that filters out the influence of high-frequency, high-voltage pulses on the drive circuit. Because high-frequency noise has extremely high energy, the common-mode inductor absorbs this noise energy and dissipates it as heat, resulting in significant heat generation. Under 200V bus voltage conditions, the surface temperature of a common-mode inductor can reach up to 130℃, and this temperature will continue to rise as the voltage increases. The core of the common-mode inductor is made of a temperature-sensitive material. When the temperature is too high, the permeability of the core changes, gradually decreasing from high to low. Therefore, excessively high temperatures cause a decrease in the permeability of the common-mode inductor core, leading to a decrease in the inductive reactance and consequently a deterioration in the filtering effect. Thus, cooling and heat dissipation of the common-mode inductor are necessary.

[0054] In related technologies, the pulse power supply component 2 includes a power transistor, typically a GaN MOS transistor (GaN Metal-Oxide-Semiconductor Field-Effect Transistor, a power semiconductor device based on gallium nitride (GaN) material). Since GaN MOS transistors generate significant heat, a cooling device needs to be placed on the same side of the board 6 to adequately cool them. The pulse power supply component 2 needs to be arranged on the board 6 according to a specific layout. One requirement is to place the pins of the GaN MOS transistor and the common-mode inductor close together. However, due to the large size of the common-mode inductor, and the fact that the space on that side of the board is already occupied by the GaN MOS transistor and the cooling device, there is no space to place the common-mode inductor. Therefore, existing pulse power supply components are unsuitable for use within the internal space of semiconductor process equipment due to their size and structural layout.

[0055] Based on the above situation, such as Figures 1-7As shown, this application provides a novel pulse power supply component that can be installed and used within the internal space of semiconductor process equipment. This pulse power supply component mainly includes a board 6, a power transistor 7, a cooling device 8, a dissipative element 9, and a common-mode inductor 10. The board 6 is a plate-shaped carrier with opposing first and second surfaces. A circuit board can be formed by printing circuits on it and electrically connecting electronic components. These electronic components can be the aforementioned pulse power supply component 2. The power transistor 7 is an electronic component that generates heat during operation. It is disposed on the first surface of the board 6, and its pins are electrically connected to the printed circuits on the board 6. This power transistor 7 is, for example, a MOSFET in the pulse power supply component 2, typically GaN. MOSFET; Cooling device 8 is a component for cooling power transistor 7 and dissipative element 9. It is thermally connected (i.e., in close contact) to both power transistor 7 and dissipative element 9 to achieve efficient cooling. In specific configuration, cooling device 8 is also mounted on board 6, and to ensure good heat dissipation for power transistor 7, cooling device 8 is located on the side facing the first surface of board 6, i.e., cooling device 8 is located on the back side of the second surface; Dissipative element 9 is a small surface-mount component, which is also mounted on the first surface of board 6 to fully contact cooling device 8, thereby being fully cooled by cooling device 8 to achieve efficient heat dissipation; Common mode inductor 10 As one of the main components of the pulse power supply assembly used for filtering to suppress high-frequency noise, it differs from the devices and components set on the first board surface of board 6 mentioned above. Instead, it is set on the second board surface of board 6, and the secondary cable 103 of the common-mode inductor 10 passes through board 6 to extend to the side where the power transistor 7, cooling device 8 and dissipation element 9 are located, and is electrically connected to the dissipation element 9. In this way, the dissipation element 9 can cooperate with the common-mode inductor 10 to form a more complex filtering network, thereby improving the filtering effect on common-mode noise and differential-mode noise. Especially in high-frequency circuits, this combined filtering method can more effectively filter out unwanted signals and improve the signal-to-noise ratio of the circuit.

[0056] The pulse power supply component with the above-described structure has two advantages. First, the common-mode inductor 10 and the power transistor 7 are respectively placed on both sides of the board 6. This allows for sufficient cooling of the power transistor 7 by placing the cooling device 8 on the same side as the power transistor 7, while also enabling the common-mode inductor 10 to be arranged on the board 6. This optimizes the structure of the pulse power supply component and allows it to be placed in the internal space of the semiconductor process equipment. Second, the dissipative element 9, which works with the common-mode inductor 10 to suppress high-frequency noise, is a small surface-mount component and can be placed on the first board surface. This means that even if the power transistor 7 and the cooling device 8 are placed on the first board surface, there is still space to accommodate the dissipative element 9, which can also be cooled by the cooling device 8. This allows the heat generated by the common-mode inductor 10 to be quickly dissipated by the cooling device, preventing EMI from occurring in the internal space of the semiconductor process equipment and ensuring the normal operation of the PWM signal generator 1 and the pulse power supply component 2.

[0057] like Figures 2-4As shown, there is a gap between the cooling device 8 and the first plate surface, and the dissipation element 9 is a surface-mount resistor disposed in the gap. In the pulse power supply assembly provided in this application, there are two main heat-generating components: one is a heat sink 12 connected to the MOSFET for heat dissipation, and the other is a common-mode inductor 10. The MOSFET has a large heat output and generates a lot of heat, resulting in a rapid temperature rise. Therefore, there must be good heat conduction between the heat sink 12 and the cooling device 8. As is well known, the longer the flow path of the heat-conducting medium, the worse the heat conduction speed. Therefore, in order to achieve good heat conduction, the flow path of the heat-conducting medium needs to be shortened as much as possible. Thus, the cooling device 8 and the MOSFET are placed on the same side of the board 6, so that the cooling device 8 and the heat sink 12 are in close contact. Since the heat sink 12 itself also needs to play a heat dissipation role, the heat sink 12 also needs to have a certain heat dissipation area. That is, the heat sink 12 will protrude relative to the first plate surface of the board 6. Therefore, when the cooling device 8 is in contact with the heat sink 12, there will be a gap between it and the first plate surface. However, the width of this gap is not very large, and the common-mode inductor in the related technology cannot be placed in the gap. Therefore, the pulse power supply components in the related technology cannot be used in the internal space of semiconductor process equipment due to their size and structural layout (i.e., the common-mode inductor cannot be placed in the gap). In this application, although the common-mode inductor 10 cannot be placed in the gap due to its large size, without improving the pin placement of the common-mode inductor 10 on the board 6, this application places the common-mode inductor 10 on the second surface of the board 6. In order to ensure that the heat generated by the common-mode inductor 10 can be dissipated in time... The common-mode inductor 10 still needs to be cooled by the cooling device 8. Based on this, the dissipation element 9 that works with the common-mode inductor 10 is placed on the first board surface that can contact the cooling device 8. Since the dissipation element 9 is a small surface-mount element, it can be placed in the gap between the cooling device 8 and the first board surface to make full use of the space. Furthermore, the secondary side cable 103 of the common-mode inductor 10 passes through the board 6 from the second board surface to the first board surface to be electrically connected to the dissipation element 9. This allows the heat generated by high-frequency noise to be transferred to the dissipation element 9 and then quickly dissipated through the cooling device 8.

[0058] Among them, the dissipation element 9 is preferably a surface-mount resistor. The reason for choosing a surface-mount resistor is twofold: firstly, it is more suitable for use with the common-mode inductor 10; secondly, it is small in size, easy to install in gaps, and is relatively common and inexpensive. To ensure good heat dissipation, the surface-mount resistor is preferably a thick-film resistor with a resistance range of 10Ω to 100Ω and an accuracy of less than 1%. Alternatively, the dissipation element 9 can also be a capacitor or a variable resistor, etc.

[0059] Furthermore, the pulse power supply component in this application can also be equipped with an LED indicator that is electrically connected to the dissipation element 9 or the common mode inductor 10. The brightness of this LED indicator will change with the strength of the high-frequency noise, so that the change of the high-frequency noise can be obtained more intuitively.

[0060] Specifically, to better adapt to the above layout and to ensure sufficient heat conduction, this application also includes a thermally conductive component 11 that connects the surface-mount resistor and the cooling device 8. This thermally conductive component 11 is, for example, thermal grease, formed by combining a ceramic sheet and a thermally conductive silicone pad. The ceramic sheet is made of aluminum nitride or beryllium oxide and has a thickness of 0.5–1 mm. The thermal conductivity of the thermally conductive silicone pad is 0.1–2 W / m*k. Furthermore, the thermally conductive component 11 is located within the aforementioned gap and is tightly fitted to the surface-mount resistor and the cooling device 8, thus facilitating the thermal connection between the dissipation element 9 and the cooling device 8, thereby achieving rapid heat dissipation.

[0061] In other alternative embodiments, heat dissipation from the common-mode inductor 10 can be achieved in other ways. For example, based on the first board surface having a power transistor 7 (e.g., a MOSFET) and a heat sink 12 for dissipating heat from the power transistor 7 (e.g., a MOSFET), and the cooling device 8 being thermally connected to the heat sink 12, the dissipation element 9 can be configured as a thermoelectric cooler 13, and it can be at least thermally connected to the heat sink 12. Specifically, the secondary cable 103 is converted to DC by a bridge rectifier and then passes through the board 6 and is electrically connected to the thermoelectric cooler 13 on the first board surface, so that the heat generated by high-frequency noise is transferred to the thermoelectric cooler 13. Since the thermoelectric cooler 13 itself has a cooling function, by making the thermoelectric cooler 13 thermally connected to the heat sink 12 of the MOSFET, the waste energy generated by electromagnetic interference can be used to dissipate heat from the MOSFET, thereby improving both efficiency and performance.

[0062] In specific settings, such as Figure 4 As shown, a thermoelectric cooler 13 is disposed between the heat sink 12 and the cooling device 8, and is thermally connected to both the heat sink 12 and the cooling device 8. When the thermoelectric cooler 13 is connected to the first plate surface, the thermoelectric cooler 13 is also disposed in the gap, so that it can conduct heat to the heat sink 12 and the cooling device 8 at the same time. That is, the thermoelectric cooler 13 is disposed between the heat sink 12 and the cooling device 8, so that the two opposing surfaces of the thermoelectric cooler 13 are fully in contact with the heat sink 12 and the cooling device 8 respectively. Thus, the cooling device 8 cools the heat sink 12 through the thermal conductivity of the thermoelectric cooler 13, and can also cool the thermoelectric cooler 13, thereby allowing the heat of the common mode inductor 10 to dissipate more quickly.

[0063] In optional embodiments, such as Figure 5 As shown, the common-mode inductor 10 includes: a toroidal core 101; a primary-side cable 102, which is a two-strand wire wound around one side of the toroidal core 101; and a secondary-side cable 103, which is a single-strand wire wound around the other side of the toroidal core 101, with its lead-out end electrically connected to the dissipation element 9. In this application, the common-mode impedance of the common-mode inductor 10 needs to be sufficiently large (above 1000 ohms), the differential-mode impedance needs to be sufficiently small (leakage inductance within 100nH), and the impedance needs to remain relatively constant within the range of 10MHz to 200MHz. To better meet this requirement, the preferred materials and parameters of the common-mode inductor 10 are: the toroidal core 101 is made of ferrite, which is sensitive to temperature changes, with a permeability between 10 and 1000, a specific loss coefficient between 10 and 200 at 1MHz, and a specific loss factor between 10 and 200 at 15MHz. The loss coefficient is between 200 and 1000, the temperature coefficient is between 200 and 100, the resistivity is between 10^5 and 10^7, the saturation magnetic flux density is between 100 and 600, the remanent magnetic flux density is between 100 and 500, the coercivity is between 100 and 500, the Curie temperature is between 300 and 1000, and the operating frequency is between 10MHz and 100MHz; the wire diameter of a single conductor in the primary side cable 102 and the secondary side cable 103 is between 0.5 and 1mm, and the temperature resistance is above 180℃.

[0064] The structure of common mode inductor 10 is as follows Figures 2-5 As shown, the cable closest to the MOSFET is the primary side cable 102. This primary side cable 102 is a two-strand wire (i.e., the primary side cable 102 is a wire bundle composed of two conductors) and has a first end 1021 and a second end 1022. The first end 1021 is connected to the common-mode input, specifically between the gate and source terminals of the MOSFET. The second end 1022 is connected to the common-mode output, specifically between the positive and negative terminals of the driver chip. The secondary side cable 103 is a single-strand wire (i.e., the secondary side cable 103 consists of only one conductor) and has a third end. Terminals 1031 and 1032 are connected. Terminal 1031 is connected to one end of the dissipative element 9, and terminal 1032 is connected to the other end of the dissipative element 9. In this structure, the magnetic flux generated by the common-mode current in the primary cable 102 will induce an electromotive force in the secondary cable 103, thereby creating a voltage between the primary cable 102 and the secondary cable 103. That is, the energy of the common-mode noise is transferred from the primary cable 102 to the secondary cable 103, and then the energy is released as heat through the dissipative element 9.

[0065] Optionally, the ratio of the number of turns of the primary side cable 102 wound on the toroidal core 101 to the number of turns of the secondary side cable 103 wound on the toroidal core 101 is 1:2. In specific winding, the primary side cable 102 is wound 2-5 turns on one side of the toroidal core 101, while the secondary side cable 103 is wound 4-10 turns in either the forward or reverse direction on the other side of the toroidal core 101, always maintaining a 1:2 ratio. In this structure, by making the primary side cable 102 a two-strand wire and the secondary side cable 103 a single-strand wire, and maintaining a 1:2 ratio, the operating performance of the common-mode inductor 10 can be optimized, resulting in better suppression of high-frequency noise. Furthermore, the common-mode inductor 10 has a simple structure, moderate size, and is easy to install on the second board surface of the board 6.

[0066] Furthermore, such as Figure 6 As shown, the pulse power supply component provided in this application also includes a transformer and a digital isolator disposed on the second board and electrically connected to the primary side cable 102, i.e., it includes isolation device 14 (the transformer and the digital isolator are collectively referred to as isolation device 14). By including a transformer and a digital isolator in the pulse power supply component, the quality of the signal emitted by the PWM signal generator 1 can be better guaranteed under the isolation effects of transformer isolation and low parasitic capacitance digital isolator.

[0067] Specifically, such as Figure 7 As shown, a noise dissipation circuit can be formed by combining the dissipation element 9 and the common-mode inductor 10. The dissipation element 9 can include multiple resistors connected in parallel (i.e., a dissipation array resistor). Noise passes through the primary side of the common-mode inductor 10, while low-frequency control signals and DC voltages can flow through easily without being affected. When noise passes through, the subsequent dissipation array resistors R1 to R4 can quickly dissipate the noise energy. Adjusting the turns ratio of the primary and secondary cables of the common-mode inductor 10 can adjust the noise inductance of the circuit, thereby achieving different filtering characteristics (such as different frequencies). Using this method, noise energy can be effectively directed to a place where heat dissipation is convenient, thus achieving heat control simultaneously.

[0068] like Figures 2-4As shown, the cooling device 8 includes a cooling block with a flow channel for coolant flow. The same cooling block is connected to multiple circuit boards 6 (not shown) to cool the dissipative components 9 on each board 6. In this structure, the cooling block contacts the power transistor 7 and the dissipative components 9 to conduct heat to them, thus cooling them. The cooling block is preferably made of a metal with good thermal conductivity, such as copper, aluminum, silver, or stainless steel. The cooling block has flow channels for guiding the coolant, which can be cooling water, cooling oil, or refrigerant, etc., providing cooling as it flows through the channels. Preferably, the same cooling block is connected to two boards 6, and the two boards 6 are respectively connected to the two largest surfaces of the cooling block, so that one cooling block can simultaneously cool the power transistors 7 and dissipative components 9 on the two boards 6. This simplifies the structure of the pulse power supply assembly, saves space, facilitates the use of the pulse power supply assembly in the internal chamber of semiconductor process equipment, and also makes full use of the cooling capacity of the cooling device 8.

[0069] Furthermore, embodiments of this application also provide a wafer carrier device, including a chuck base (in... Figure 1 In order to fully demonstrate the layout of the pulse power supply component 2, the entire structure of the chuck base is not shown. Instead, only the base 4 of the chuck base, the chuck (which can be, for example, an electrostatic chuck), the pulse signal generator (i.e., the PWM signal generator 1), and the aforementioned pulse power supply component 2 are shown.

[0070] The chuck contains electrodes and is used to carry the wafer. The chuck is mounted on a chuck base to form an accommodating space, which includes a PWM signal generator 1, a pulse power supply component, and a pulse output component 3. The PWM signal generator 1 generates a pulse square wave signal, and the pulse power supply component amplifies the pulse square wave signal before feeding it to the electrodes through the pulse output component 3. In a specific structure, such as... Figure 1As shown, an insulating ring 15 and an interface plate 5 are generally provided between the chuck (not shown in the figure) and the chuck base. The insulating ring 15 is located above the interface plate 5, and the chuck is positioned above the insulating ring 15. Both the insulating ring 15 and the interface plate 5 have inner spaces. The chuck base includes an annular base (not shown in the figure) and a base 4, which has inner spaces. The chuck base is a support seat located below the chuck, used to support and install the chuck. Since the annular base, insulating ring 15, and interface plate 5 have inner spaces, these inner spaces form an accommodating space when the chuck is placed on the chuck base. The base 4 of the chuck base blocks the lower opening of this accommodating space. This accommodating space can be used to accommodate the PWM signal generator 1, the pulse power supply component 2, and the pulse output component 3. During installation, the PWM signal generator 1 is positioned near or at the center of the chuck base (or base 4). The pulse power supply component has multiple components (e.g., Figure 1 As shown in the three diagrams, in order to meet process requirements and installation requirements in the accommodating space, and to optimize the working performance and structural layout of the components, these pulse power supply components are arranged on the inner walls of the insulating ring 15, the interface disk 5, and / or the annular base, and are evenly distributed around the insulating ring 15, the interface disk 5, and the annular base. This also allows the pulse power supply components to evenly surround the PWM signal generator 1. The pulse output component 3 is connected to the top of the pulse power supply component (i.e., the end of the pulse power supply component away from the PWM signal generator 1), and each pulse power supply component has a pulse output component 3 at its top. This pulse output component 3 can be a wire for pulse output, and the wire is electrically connected to the electrode arranged in the chuck, thereby transmitting a pulse signal to the reaction chamber of the semiconductor process equipment through the electrode.

[0071] Since this wafer carrier device includes the aforementioned pulse power supply component, the beneficial effects of the pulse power supply component on the wafer carrier device are explained in the above content and will not be repeated here.

[0072] In addition, this application embodiment also provides a semiconductor process apparatus, which includes a chamber body and the aforementioned pulse power supply component or the aforementioned wafer carrier device disposed within the chamber body.

[0073] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0074] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0075] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0076] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0077] It should be understood that the qualifiers “first,” “second,” “third,” “fourth,” “fifth,” and “sixth” used in the description of the embodiments of this application are only used to more clearly illustrate the technical solutions and are not intended to limit the scope of protection of this application.

[0078] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A pulse power supply component, characterized in that, include: The circuit board has a first plate surface and a second plate surface arranged opposite to each other; The power transistor is disposed on the first board surface; A cooling device is disposed on one side of the first plate facing the board and is thermally connected to the power tube; The dissipative element is a surface-mount element, which is disposed on the first plate surface and is thermally connected to the cooling device; A common-mode inductor is disposed on the second board surface, and the secondary cable of the common-mode inductor passes through the board and is electrically connected to the dissipative element.

2. The pulse power supply component according to claim 1, characterized in that, There is a gap between the cooling device and the first plate surface, and the dissipation element is a surface mount resistor disposed in the gap.

3. The pulse power supply component according to claim 1, characterized in that, The first plate surface is also provided with a heat sink for dissipating heat from the power transistor, and the cooling device is thermally connected to the heat sink.

4. The pulse power supply component according to claim 3, characterized in that, The dissipation element is a semiconductor refrigeration chip, and is at least thermally connected to the heat sink.

5. The pulse power supply component according to claim 4, characterized in that, The semiconductor cooling chip is disposed between the heat sink and the cooling device, and is thermally connected to both the heat sink and the cooling device.

6. The pulse power supply component according to claim 2, characterized in that, It also includes a thermally conductive component that connects the chip resistor and the cooling device.

7. The pulse power supply component according to claim 6, characterized in that, The thermally conductive component includes a ceramic sheet and a thermally conductive silicon pad. The thickness of the ceramic sheet ranges from 0.5 to 1 mm, and the thermal conductivity of the thermally conductive silicon pad ranges from 0.1 to 2 W / m*k.

8. The pulse power supply component according to claim 2, characterized in that, The resistance value of the chip resistor is in the range of 10Ω to 100Ω.

9. The pulse power supply component according to any one of claims 1-8, characterized in that, The common-mode inductor includes: Toroidal core; The primary side cable is a two-strand wire, wound around one side of the toroidal magnetic core; The secondary cable is a single-strand wire, wound around the other side of the annular magnetic core, and its lead-out end is electrically connected to the dissipative element.

10. The pulse power supply component according to claim 9, characterized in that, The ratio of the number of turns of the primary side cable wound on the annular magnetic core to the number of turns of the secondary side cable wound on the annular magnetic core is 1:

2.

11. The pulse power supply component according to claim 9, characterized in that, The toroidal magnetic core has a permeability range of 10 to 1000, a specific loss coefficient range of 10 to 200 at 1 MHz, a specific loss coefficient range of 200 to 1000 at 15 MHz, a temperature coefficient range of 200 to 100, a resistivity range of 10^5 to 10^7, a saturation magnetic flux density range of 100 to 600, a remanent magnetic flux density range of 100 to 500, a coercivity range of 100 to 500, a Curie temperature range of 300 to 1000, and an operating frequency range of 10 MHz to 100 MHz. And / or, The diameter of a single conductor in the primary side cable and the secondary side cable ranges from 0.5 to 1 mm, and the temperature resistance is above 180℃. And / or, The primary side cable is wound 2 to 5 turns on one side of the toroidal magnetic core, and the secondary side cable is wound 4 to 10 turns in either the forward or reverse direction on the other side of the toroidal magnetic core.

12. The pulse power supply component according to claim 9, characterized in that, It also includes a transformer and a digital isolator disposed on the second plate and electrically connected to the primary side cable.

13. The pulse power supply component according to claim 1, characterized in that, The cooling device includes a cooling block, and the cooling block has a flow channel for the flow of coolant. Furthermore, the same cooling block is connected to multiple boards so that the dissipative components on each board can be cooled.

14. A wafer carrier device, characterized in that, It includes a chuck base, a chuck, a pulse signal generator, and a pulse power supply assembly as described in any one of claims 1-13; wherein, The chuck is provided with electrodes, the chuck is used to carry the wafer, and is disposed on the chuck base to form an accommodating space with the chuck base, and the accommodating space is provided with the pulse signal generator, the pulse power supply component and electrodes; The pulse signal generator is used to generate a pulse square wave signal, and the pulse power supply component is used to amplify the pulse square wave signal and feed it into the electrode.

15. A semiconductor process apparatus, characterized in that, Includes a chamber body and a pulse power supply assembly as described in any one of claims 1-13 disposed within the chamber body; It may include a chamber body and a wafer carrier device as described in claim 14 disposed within the chamber body.

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