Furnace tube for wafer film growth

Abstract

The invention provides a furnace tube for wafer film growth, comprising: a furnace body having a reaction chamber; the wafer boat is arranged in the reaction chamber and is used for bearing a wafer; the first pipeline is provided with a first gas discharging section, and the first gas discharging section is located in the reaction chamber, extends in the axial direction of the wafer boat and is used for discharging reaction gas towards the wafer boat; the flow uniformizing mechanism comprises a second pipeline, the second pipeline is provided with a second gas discharging section, the second gas discharging section is located in the reaction cavity and extends in the axial direction of the wafer boat, and the second gas discharging section and the first gas discharging section are arranged in a spaced mode and used for discharging dilution gas or reaction gas towards the wafer boat. According to the furnace tube for wafer film growth, distribution of reaction gas in the furnace tube can be adjusted through cooperative use of the first pipeline and the second pipeline, the uniformity of wafer film growth is improved, and the yield of subsequent products is guaranteed.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing equipment technology, and more particularly to a furnace tube for wafer thin film growth. Background Technology

[0002] Atomic Layer Deposition (ALD) is a method that deposits materials onto a substrate surface layer by layer in the form of single-atom films. ALD reactions have good compatibility and are widely used in advanced process nodes.

[0003] Specifically, the ALD process reaction takes place inside a furnace tube, where dozens or even hundreds of wafers can be grown at once, resulting in lower costs. However, considering the characteristics of furnace tube processing and the simultaneous operation of multiple wafers, wafer-to-wafer uniformity (WTW U%) must usually be taken into account when growing thin films inside the furnace tube.

[0004] In existing furnace tubes, reactive gases typically enter from the bottom and are transported upwards throughout the entire tube for thin film deposition on wafers. When reactive gases are introduced from the bottom, they are continuously consumed at the bottom of the furnace tube, resulting in a smaller amount of reactive gas at the top compared to the bottom. This leads to differences in the shape and thickness of the deposited thin film on the wafer surface within the furnace tube. Specifically, the film thickness is thicker near the bottom of the furnace tube and thinner near the top. This uneven distribution poses significant challenges to subsequent processes and can, in severe cases, even affect the yield of the final product. Summary of the Invention

[0005] The purpose of this invention is to provide a furnace tube for wafer thin film growth, which can adjust the distribution of reactive gases inside the furnace tube, improve the uniformity of wafer thin film growth, and ensure the yield of subsequent products.

[0006] To achieve the above objectives, in a first aspect, the present invention provides a furnace tube for wafer thin film growth, comprising: The furnace body has a reaction chamber; A crystal boat, located within the reaction chamber, is used to hold the wafer; A first conduit has a first gas emission section located within the reaction chamber and extending along the axial direction of the crystal boat for emitting reaction gases toward the crystal boat. The flow equalization mechanism includes a second pipe having a second gas emission section located within the reaction chamber and extending along the axial direction of the crystal boat. The second gas emission section is spaced apart from the first gas emission section and is used to discharge dilution gas or reaction gas toward the crystal boat.

[0007] The beneficial effects of the furnace tube for wafer thin film growth provided by the present invention are as follows: by setting a first pipe and a flow equalization mechanism in the furnace body, the first pipe is used to discharge reaction gas, and the second pipe of the flow equalization mechanism can also be used to discharge reaction gas. Through the combined use of the first pipe and the second pipe, the distribution of reaction gas in the furnace body can be adjusted so that the reaction gas is evenly distributed in the reaction chamber, thereby improving the uniformity of wafer thin film growth and ensuring the yield of subsequent products.

[0008] In some embodiments, the first gas emission section is provided with a plurality of equally spaced first exhaust holes, which face the crystal boat and are used to discharge dilution gas or reaction gas toward the crystal boat. The second gas emission section is provided with several equally spaced second exhaust holes, which face the crystal boat and are used to discharge dilution gas or reaction gas toward the crystal boat. Each of the first exhaust holes has a corresponding second exhaust hole at the same height. The beneficial effect is that the first gas emission section has several equally spaced first exhaust holes, each facing the wafer boat. The second gas emission section is spaced apart from the first gas emission section, and the second gas emission section has several equally spaced second exhaust holes, each with a corresponding first exhaust hole at a corresponding height. The first and second exhaust holes are used simultaneously to discharge reactive gases towards the wafer on the wafer boat, preventing uneven distribution of reactive gases during thin film growth.

[0009] In some embodiments, the flow equalization mechanism further includes a controller, a control valve, and a plurality of the second pipes; The second pipeline also has a second gas transmission section, which is connected to the second gas emission section, and one end extends out of the outside of the reaction chamber. Several second gas emission sections are arranged at intervals around the crystal boat. The control valve is located outside the reaction chamber and is installed in the second gas transmission section, and is used to control the opening and closing of the second gas transmission section; The controller is electrically connected to the control valve and is used to control the control valve to open or close the corresponding second gas transmission section. Its advantages are: the second pipeline has a second gas transmission section, which passes through the furnace body and connects to a second gas emission section. Each second gas transmission section is equipped with a control valve. Several second gas emission sections are spaced apart around the crystal boat. The controller is electrically connected to the control valve and is used to control the control valve to open or close the corresponding second gas transmission section, thereby adjusting the distribution of the reaction gas in the reaction chamber and ensuring that the reaction gas is evenly distributed within the reaction chamber, thus improving the uniformity of wafer thin film growth.

[0010] In some embodiments, the flow equalization mechanism further includes a plurality of detectors electrically connected to the controller; The inner wall of the reaction chamber is divided into several detection areas along its axial direction, and each detection area is equipped with the detector. Several of the detectors are used to detect the actual concentration value of the reactant gas in the corresponding detection area and to feed the actual reactant gas concentration value back to the controller; The controller is configured with a reaction gas concentration range. Based on the received actual reaction gas concentration value, the controller controls the opening and closing of the control valves to ensure that the actual reaction gas concentration value falls within the set range. Its advantages are: the inner wall of the reaction chamber is divided into several detection zones along its axial direction. Each detection zone is equipped with a detector, which detects the concentration of the reaction gas within its corresponding zone and feeds back the detected actual reaction gas concentration value to the controller. When the actual reaction gas concentration value is outside the set range, the controller sequentially adjusts the opening and closing of each control valve until the actual reaction gas concentration value detected by each detector is within the set range, thus ensuring a uniform distribution of the reaction gas within the reaction chamber.

[0011] In some embodiments, the flow equalization mechanism further includes a flow controller disposed outside the reaction chamber, the flow controller being electrically connected to the controller; Each of the second gas transmission sections is equipped with a flow controller, which controls the flow rate of the reactant gas transmitted within the second gas transmission section. The advantage is that, since each second gas transmission section has a flow controller to control the flow rate of the reactant gas transmitted within that section, when the actual reactant gas concentration is outside the set range, the controller sequentially adjusts each flow controller until the actual reactant gas concentration detected by each detector is within the set range, thereby further ensuring the uniform distribution of the reactant gas within the reaction chamber.

[0012] In some embodiments, the flow equalization mechanism further includes a surrounding flow equalization component; The surrounding flow equalization assembly is movably disposed within the reaction chamber and surrounds the crystal boat, and the surrounding flow equalization assembly can move along the axial direction of the crystal boat; When the detector detects that the actual reactive gas concentration within the corresponding detection area exceeds or falls below the reactive gas concentration range, the surrounding flow equalization component moves to the height position of the corresponding detection area to equalize the reactive gas flow. Its beneficial effect is that by setting the surrounding flow equalization component, the distribution of reactive gas within the reaction chamber can be further adjusted, achieving a local fine-tuning effect. For example, by moving the surrounding flow equalization component to the height position of the corresponding detection area, the gas concentration can be evenly distributed from areas with higher actual reactive gas concentrations to areas with lower actual reactive gas concentrations.

[0013] In some embodiments, the surrounding flow equalization assembly includes a first flow equalization element and a first lifting mechanism; The first lifting mechanism is electrically connected to the controller, and the first lifting mechanism has a first lifting part, which can extend and retract along the axial direction of the crystal boat; The first flow equalizer is connected to the first lifting part. The first flow equalizer is annular and sleeved on the crystal boat. An annular first flow equalizer plate is provided on the outer wall of the first flow equalizer, and the bottom of the first flow equalizer plate is inclined towards the inner side of the reaction chamber. Its advantages are: the controller is electrically connected to the first lifting mechanism, and the first flow equalizer is connected to the first lifting part of the first lifting mechanism. When the controller controls the first lifting part of the first lifting mechanism to move up and down, it can drive the first flow equalizer to move up and down until the first flow equalizer reaches the required height. The annular first flow equalizer plate on the outer wall of the first flow equalizer is used to achieve flow equalization. Since the bottom of the first flow equalizer plate is inclined towards the inner side of the reaction chamber, it can be understood that the first flow equalizer can divert some of the gas from the upper part to the lower part. Therefore, when the concentration of the reactant gas in the upper detection area is greater than the concentration of the reactant gas in the lower detection area, the first flow equalizer can be moved between these two adjacent detection areas.

[0014] In some embodiments, the surrounding flow equalization assembly further includes a second flow equalization element and a second lifting mechanism; The second lifting mechanism is electrically connected to the controller, and the second lifting mechanism has a second lifting part that can extend and retract along the axial direction of the crystal boat; The second flow equalizer is connected to the second lifting part. The second flow equalizer is annular and fitted onto the crystal boat. An annular second flow equalizer plate is provided on the outer wall of the second flow equalizer, and the bottom of the second flow equalizer plate is inclined towards the outside of the reaction chamber. Its advantages are: the controller is also electrically connected to the second lifting mechanism, and the second flow equalizer is connected to the second lifting part of the second lifting mechanism. When the controller controls the second lifting part of the second lifting mechanism to rise or fall, it can drive the second flow equalizer to rise or fall until the second flow equalizer moves to the required height position. The annular second flow equalizer plate on the outer wall of the second flow equalizer is used to achieve flow equalization. Since the bottom of the second flow equalizer plate is inclined towards the outside of the reaction chamber, it can be understood that the second flow equalizer can guide some of the gas from below to above. Therefore, when the concentration of the reactant gas in the lower detection area is greater than the concentration of the reactant gas in the upper detection area, the second flow equalizer can be moved between these two adjacent detection areas.

[0015] In some embodiments, the furnace tube for wafer thin film growth further includes a base and a separator plate; The base is rotatably disposed at the bottom of the reaction chamber; The partition plate is disposed on the base, and the edge of the partition plate is close to the inner wall of the reaction chamber; The crystal boat is mounted on the partition plate, and is located on both sides of the partition plate, along with the first lifting mechanism and the second lifting mechanism. Its advantages are: by setting a partition plate on the base and placing the first and second lifting mechanisms below the partition plate, the first and second lifting mechanisms can be separated from the reaction chamber, providing a certain degree of protection for them and preventing them from being exposed to excessively high temperatures for extended periods, thus extending their service life.

[0016] In some embodiments, the partition plate is provided with a first through hole and a second through hole; Both the first lifting mechanism and the second lifting mechanism are disposed on the partition plate, and the first lifting part passes through the first through hole and is connected to the first flow equalizer, and the second lifting part passes through the second through hole and is connected to the second flow equalizer. Attached Figure Description

[0017] Figure 1 A cross-sectional view along the axial direction of a furnace tube used for wafer thin film growth according to an embodiment of the present invention; Figure 2 A top view of the internal structure of a furnace tube for wafer thin film growth according to an embodiment of the present invention; Figure 3A top view of the internal structure of a furnace tube for wafer thin film growth according to another embodiment of the present invention; Figure 4 A front view of the internal structure of a furnace tube for wafer thin film growth according to another embodiment of the present invention; Figure 5 A front view and a cross-sectional view of the first flow equalizer along its axial direction, provided for embodiments of the present invention; Figure 6 This is a top view of the first flow equalizer provided in the embodiment of the present invention; Figure 7 A front view of the second flow equalizer and a cross-sectional view of the second flow equalizer along its axial direction, provided in the embodiments of the present invention; Figure 8 This is a schematic diagram of the structure of the first flow equalizer and the second flow equalizer used in conjunction with each other in an embodiment of the present invention.

[0018] Figure label: Furnace body 1, reaction chamber 11, exhaust channel 12, crystal boat 2, first pipe 3, first gas transmission section 31, first gas emission section 32, first exhaust port 33, flow equalization mechanism 4, second pipe 41, second gas transmission section 411, second gas emission section 412, second exhaust port 413, control valve 42, detector 43, flow controller 44, surrounding flow equalization assembly 45, first flow equalization element 451, first flow equalization plate 4511, first connecting rod 4512, notch 4513, first lifting mechanism 452, second flow equalization element 453, second flow equalization plate 4531, second connecting rod 4532, second lifting mechanism 454, base 5, partition plate 6. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art to which this invention pertains. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, without excluding other elements or objects. Unless otherwise specified, the term "connection" as used herein can refer to a direct connection or an indirect connection, i.e., a connection through an intermediate object.

[0020] To address the problems existing in the prior art, embodiments of the present invention provide a furnace tube for wafer thin film growth, as shown in the reference. Figure 1 and Figure 2As shown, the furnace tube includes a furnace body 1, a crystal boat 2, a first conduit 3, and a flow equalization mechanism 4. The furnace body 1 has a reaction chamber 11 and an exhaust channel 12 for discharging the reacted gases. The crystal boat 2 is located within the reaction chamber 11 and is used to hold the wafers. The first conduit 3 has a first gas transmission section 31 and a first gas discharge section 32. One end of the first gas transmission section 31 is connected to the first gas discharge section 32, and the first gas transmission section 31 passes through the furnace body 1. The other end is connected to an external gas supply source. The first gas discharge section 32 is located within the reaction chamber 11 and extends along the axial direction of the crystal boat 2, for discharging the reacted gases towards the crystal boat 2. The flow equalization mechanism 4 includes a second pipe 41, which has a second gas transmission section 411 and a second gas discharge section 412. One end of the second gas transmission section 411 is connected to the second gas discharge section 412. The second gas transmission section 411 passes through the furnace body 1, and the other end is also connected to an external gas supply source. The second gas discharge section 412 is located in the reaction chamber 11 and extends along the axial direction of the crystal boat 2. The second gas discharge section 412 is spaced apart from the first gas discharge section 32 and is used to discharge dilution gas or reaction gas toward the crystal boat 2.

[0021] In this embodiment, by providing the first pipe 3 and the flow equalization mechanism 4 within the furnace body 1, the first pipe 3 is used to discharge the reaction gas into the reaction chamber 11, and the second pipe 41 of the flow equalization mechanism 4 can also be used to discharge the reaction gas into the reaction chamber 11. Through the combined use of the first pipe 3 and the second pipe 41, the distribution of the reaction gas within the furnace body 1 is adjusted so that the reaction gas is evenly distributed within the reaction chamber 11, thereby improving the uniformity of wafer thin film growth and ensuring the yield of subsequent products.

[0022] refer to Figure 1 and Figure 2 As shown, in some specific embodiments, both the first pipe 3 and the second pipe 41 are L-shaped, with the second pipe 41 in the clockwise direction of the first pipe 3, and the direction in which the first gas emission section 32 emits gas toward the crystal boat 2 is perpendicular to the direction in which the second gas emission section 412 emits gas toward the crystal boat 2.

[0023] In some embodiments, the first gas emission section 32 has a plurality of equally spaced first exhaust holes 33, which face the crystal boat 2, and are used to emit reactive gases toward the crystal boat 2. The second gas emission section 412 has a plurality of equally spaced second exhaust holes 413, which all face the crystal boat 2, and are used to emit reactive gases toward the crystal boat 2. Each first exhaust hole 33 has a corresponding second exhaust hole 413 at the same height.

[0024] In this embodiment, a plurality of equally spaced first exhaust holes 33 are provided on the first gas emission section 32, and the second gas emission section 412 is spaced apart from the first gas emission section 32. A plurality of equally spaced second exhaust holes 413 are also provided on the second gas emission section 412. Each second exhaust hole 413 has a first exhaust hole 33 of corresponding height. The first exhaust holes 33 and the second exhaust holes 413 are used simultaneously to discharge reaction gas to the wafer on the crystal boat 2, so as to avoid uneven distribution of reaction gas during the thin film growth process of the wafer.

[0025] refer to Figure 3 As shown, in some embodiments, the flow equalization mechanism 4 further includes a controller, a control valve 42, and a plurality of second pipes 41. The plurality of second pipes 41 are arranged around the wafer spacers so that a plurality of second gas emission sections 412 are spaced around the wafer boat 2. The control valve 42 is located outside the reaction chamber 11 and is disposed in the second gas transmission section 411, used to control the opening and closing of the second gas transmission section 411. The controller is disposed outside the furnace body 1 and electrically connected to the control valve 42, used to control the control valve 42 to open or close the corresponding second gas transmission section 411.

[0026] In this embodiment, the number of second pipes 41 is set to four, and each second gas transmission section 411 is equipped with a control valve 42. The control valve 42 is a pneumatic valve, and the controller is electrically connected to the control valve 42 to control the control valve 42 to open or close the corresponding second gas transmission section 411. Therefore, in this embodiment, the furnace tube can control the opening or closing of each second gas transmission section 411 according to actual needs to adjust the distribution of reaction gas in the reaction chamber 11, so that the reaction gas is evenly distributed in the reaction chamber 11, thereby improving the uniformity of wafer thin film growth.

[0027] refer to Figure 1 and Figure 2As shown, in some embodiments, the flow equalization mechanism 4 further includes a plurality of detectors 43 electrically connected to the controller. The inner wall of the reaction chamber 11 is divided into a plurality of detection areas along its axial direction, and each detection area is provided with a detector 43. The plurality of detectors 43 are used to detect the actual reaction gas concentration value in the corresponding detection area and feed the actual reaction gas concentration value back to the controller. The controller is set with a reaction gas concentration range, and the controller controls the opening and closing of the control valve 42 according to the received actual reaction gas concentration value, so that the actual reaction gas concentration value is within the reaction gas concentration range.

[0028] In this embodiment, the inner wall of the reaction chamber 11 is divided into several detection areas along its axial direction. Each detection area is equipped with a detector 43, which is a gas concentration detector. Each detector 43 detects the concentration of the reactant gas within its corresponding detection area and feeds back the detected actual reactant gas concentration value to the controller, allowing operators to understand the actual distribution of the reactant gas within the reaction chamber 11. When the actual reactant gas concentration value is outside the set reactant gas concentration range, operators can use the controller to sequentially adjust the opening and closing of each control valve 42 until the actual reactant gas concentration value detected by each detector 43 is within the set reactant gas concentration range, ensuring a uniform distribution of the reactant gas within the reaction chamber 11.

[0029] It is understandable that, in actual work, as long as the reaction gas in the reaction chamber 11 can be evenly distributed, the operator can control at least one of the control valves 42 to open according to actual needs.

[0030] Furthermore, the flow equalization mechanism 4 also includes a flow controller 44 disposed outside the reaction chamber 11, and the flow controller 44 is electrically connected to the controller. Each of the second gas transmission sections 411 is provided with the flow controller 44, and the flow controller 44 is used to control the flow rate of the reaction gas transmitted in the second gas transmission section 411.

[0031] In this embodiment, each of the second gas transmission sections 411 is provided with a flow controller 44. The flow controller 44 is used to control the flow rate of the reaction gas transmitted in the corresponding second gas transmission section 411. When the actual reaction gas concentration value is not within the reaction gas concentration range set by the controller, the controller adjusts each flow controller 44 in sequence until the actual reaction gas concentration value detected by each detector 43 is within the set reaction gas concentration range, so as to further ensure the uniform distribution of the reaction gas in the reaction chamber 11.

[0032] refer to Figure 2 and Figure 4 As shown, in some embodiments, the flow equalization mechanism 4 further includes a surrounding flow equalization component 45, which is movably disposed within the reaction chamber 11 and surrounds the crystal boat 2, and is movable along the axial direction of the crystal boat 2. When the detector 43 detects that the actual reactive gas concentration value within the corresponding detection area exceeds or falls below the reactive gas concentration range, the surrounding flow equalization component 45 moves to the height position of the corresponding detection area to equalize the reactive gas flow.

[0033] In this embodiment, the surrounding flow equalization component 45 is used to further adjust the distribution of the reaction gas within the reaction chamber, achieving a local fine-tuning effect. For example, by moving the surrounding flow equalization component 45 to the height position corresponding to the detection area, the gas concentration can be evenly distributed from areas with higher actual reaction gas concentrations to areas with lower actual reaction gas concentrations.

[0034] refer to Figure 4 and Figure 5 As shown, in some specific embodiments, the surrounding flow equalization assembly 45 includes a first flow equalization element 451 and a first lifting mechanism 452. The first lifting mechanism 452 is electrically connected to the controller and has a first lifting portion that can extend and retract along the axial direction of the crystal boat 2. The first flow equalization element 451 has at least one first connecting rod 4512 connected to the first lifting portion. The first flow equalization element 451 is annular and sleeved on the crystal boat 2, maintaining a certain distance from it. The outer wall of the first flow equalization element 451 is provided with an annular first flow equalization plate 4511. The bottom of the first flow equalization plate 4511 is inclined towards the inner side of the reaction chamber 11 and forms a certain angle with the outer wall of the first flow equalization element 451.

[0035] In some embodiments, the first flow equalizer 451 has two first connecting rods 4512, which are connected to corresponding first lifting parts to increase the stability of the first flow equalizer 4511.

[0036] In this embodiment, the controller is electrically connected to the first lifting mechanism 452, and the first flow equalizer 451 is fixedly connected to the first lifting part of the first lifting mechanism 452. When the controller controls the first lifting part of the first lifting mechanism 452 to rise or fall, it can drive the first flow equalizer 451 to rise or fall until the first flow equalizer 451 moves to the required height position. The outer wall of the first flow equalizer 451 is provided with an annular first flow equalizer plate 4511, which is used to achieve the function of flow equalization.

[0037] Understandably, since the bottom of the first flow equalizer 4511 is inclined towards the inside of the reaction chamber 11, when the first exhaust port 33 and the second exhaust port 413 discharge gas towards the crystal boat 2, the first flow equalizer 451 can divert some of the gas from the upper part to the lower part. Therefore, when the concentration of the reactive gas in the upper detection area is greater than the concentration of the reactive gas in the lower detection area, the first flow equalizer 451 can be moved between these two adjacent detection areas.

[0038] Further, refer to Figure 4 and Figure 7 As shown, the surrounding flow equalization assembly 45 further includes a second flow equalization element 453 and a second lifting mechanism 454. The second lifting mechanism 454 is electrically connected to the controller and has a second lifting section that can extend and retract along the axial direction of the crystal boat 2. The second flow equalization element 453 has at least one second connecting rod 4532 connected to the second lifting section. The second flow equalization element 453 is annular, fitted onto the crystal boat 2, and maintains a certain distance from it. The outer wall of the second flow equalization element 453 is provided with an annular second flow equalization plate 4531. The bottom of the second flow equalization plate 4531 is inclined towards the outside of the reaction chamber 11 and forms a certain angle with the outer wall of the second flow equalization element 453.

[0039] In this embodiment, the controller is also electrically connected to the second lifting mechanism 454, and the second flow equalizer 453 is connected to the second lifting part of the second lifting mechanism 454. When the controller controls the second lifting part of the second lifting mechanism 454 to lift, it can drive the second flow equalizer 453 to lift until the second flow equalizer 453 moves to the required height position. The outer wall of the second flow equalizer 453 is provided with an annular second flow equalizer plate 4531, which is used to achieve the function of flow equalization.

[0040] Understandably, since the bottom of the second flow equalizer 4531 is inclined towards the outside of the reaction chamber 11, when the first exhaust port 33 and the second exhaust port 413 discharge gas towards the crystal boat 2, the second flow equalizer 453 can divert some of the gas from the lower part to the upper part. Therefore, when the concentration of the reactive gas in the lower detection area is greater than the concentration of the reactive gas in the upper detection area, the second flow equalizer 453 can be moved between these two adjacent detection areas.

[0041] In some embodiments, the second flow equalizer 4531 has two second connecting rods 4532, which are connected to corresponding second lifting parts to increase the stability of the second flow equalizer 4531.

[0042] Additionally, refer to Figures 6 to 8 As shown, in order to avoid interference between the first flow equalizer 451 and the second flow equalizer 453 during movement, the first flow equalizer 451 has a notch 4513 on one side wall, and the second connecting rod 4532 can pass through the notch 4513, so that the second flow equalizer 453 can move up and down without being affected by the first flow equalizer 451.

[0043] refer to Figure 4 As shown, in some embodiments, the furnace tube for wafer thin film growth further includes a base 5, which is rotatably disposed at the bottom of the reaction chamber 11. A partition plate 6 is disposed on the base 5, with its edge close to the inner wall of the reaction chamber, and the crystal boat 2 is disposed on the partition plate 6.

[0044] Specifically, the partition plate 6 is provided with a first through hole and a second through hole. The first lifting mechanism 452 and the second lifting mechanism 454 are both provided on the partition plate 6. The first lifting part passes through the first through hole and is connected to the first flow equalizer 451, and the second lifting part passes through the second through hole and is connected to the second flow equalizer 453.

[0045] In this embodiment, by setting the partition plate 6 on the base 5 and placing the first lifting mechanism 452 and the second lifting mechanism 454 below the partition plate 6, the first lifting mechanism 452 and the second lifting mechanism 454 can be separated from the reaction chamber 11, which provides a certain degree of protection for the first lifting mechanism 452 and the second lifting mechanism 454 and prevents them from being in an environment with excessively high temperatures for a long time, thus affecting their service life.

[0046] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of this application should be covered within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A furnace tube for wafer thin film growth, characterized in that, include: The furnace body has a reaction chamber; A crystal boat, located within the reaction chamber, is used to hold the wafer; A first conduit has a first gas emission section located within the reaction chamber and extending along the axial direction of the crystal boat for emitting reaction gases toward the crystal boat. The flow equalization mechanism includes a second pipe having a second gas emission section located within the reaction chamber and extending along the axial direction of the crystal boat. The second gas emission section is spaced apart from the first gas emission section and is used to discharge dilution gas or reaction gas toward the crystal boat.

2. The furnace tube for wafer thin film growth according to claim 1, characterized in that, The first gas emission section is provided with a plurality of equally spaced first exhaust holes, which face the crystal boat and are used to discharge dilution gas or reaction gas toward the crystal boat. The second gas emission section is provided with several equally spaced second exhaust holes, which face the crystal boat and are used to discharge dilution gas or reaction gas toward the crystal boat. Each of the first exhaust holes has a corresponding second exhaust hole at the same height.

3. The furnace tube for wafer thin film growth according to claim 1, characterized in that, The flow equalization mechanism also includes a controller, a control valve, and several second pipes; The second pipeline also has a second gas transmission section, which is connected to the second gas emission section, and one end extends out of the outside of the reaction chamber. Several second gas emission sections are arranged at intervals around the crystal boat. The control valve is located outside the reaction chamber and is installed in the second gas transmission section, and is used to control the opening and closing of the second gas transmission section; The controller is electrically connected to the control valve and is used to control the control valve to open or close the corresponding second gas transmission section.

4. The furnace tube for wafer thin film growth according to claim 3, characterized in that, The flow equalization mechanism also includes several detectors electrically connected to the controller; The inner wall of the reaction chamber is divided into several detection areas along its axial direction, and each detection area is equipped with the detector. Several of the detectors are used to detect the actual concentration value of the reactant gas in the corresponding detection area and to feed the actual reactant gas concentration value back to the controller; The controller is configured with a range of reactant gas concentrations. The controller controls the opening and closing of the control valve based on the received actual reactant gas concentration value, so that the actual reactant gas concentration value is within the range of reactant gas concentrations.

5. The furnace tube for wafer thin film growth according to claim 3 or 4, characterized in that, The flow equalization mechanism also includes a flow controller located outside the reaction chamber, and the flow controller is electrically connected to the controller. Each of the second gas transmission sections is equipped with the flow controller, which is used to control the flow rate of the reaction gas transmitted within the second gas transmission section.

6. The furnace tube for wafer thin film growth according to claim 4, characterized in that, The flow equalization mechanism also includes a surrounding flow equalization component; The surrounding flow equalization assembly is movably disposed within the reaction chamber and surrounds the crystal boat, and the surrounding flow equalization assembly can move along the axial direction of the crystal boat; When the detector detects that the actual concentration of the reactant gas in the corresponding detection area exceeds or falls below the range of reactant gas concentration, the surrounding flow equalization component moves to the height position of the corresponding detection area to equalize the flow of the reactant gas.

7. The furnace tube for wafer thin film growth according to claim 6, characterized in that, The surrounding flow equalization assembly includes a first flow equalization element and at least one first lifting mechanism; The first lifting mechanism is electrically connected to the controller, and the first lifting mechanism has a first lifting part, which can extend and retract along the axial direction of the crystal boat; The first flow equalizer is connected to at least one of the first lifting parts. The first flow equalizer is annular and sleeved on the crystal boat. The outer side wall of the first flow equalizer is provided with an annular first flow equalizer plate. The bottom of the first flow equalizer plate is inclined towards the inside of the reaction chamber.

8. The furnace tube for wafer thin film growth according to claim 7, characterized in that, The surrounding flow equalization assembly further includes a second flow equalization element and at least one second lifting mechanism; The second lifting mechanism is electrically connected to the controller, and the second lifting mechanism has a second lifting part that can extend and retract along the axial direction of the crystal boat; The second flow equalizer is connected to at least one of the second lifting parts. The second flow equalizer is annular and sleeved on the crystal boat. The outer wall of the second flow equalizer is provided with an annular second flow equalizer plate. The bottom of the second flow equalizer plate is inclined towards the outside of the reaction chamber.

9. The furnace tube for wafer thin film growth according to claim 8, characterized in that, It also includes a base and dividers; The base is rotatably disposed at the bottom of the reaction chamber; The partition plate is disposed on the base, and the edge of the partition plate is close to the inner wall of the reaction chamber; The crystal boat is disposed on the partition plate, and is located on both sides of the partition plate, respectively, along with the first lifting mechanism and the second lifting mechanism.

10. The furnace tube for wafer thin film growth according to claim 9, characterized in that, The partition plate is provided with a first through hole and a second through hole; Both the first lifting mechanism and the second lifting mechanism are disposed on the partition plate, and the first lifting part passes through the first through hole and is connected to the first flow equalizer, and the second lifting part passes through the second through hole and is connected to the second flow equalizer.

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