Crystal growing device

Abstract

An embodiment of the present specification provides a crystal growth apparatus, comprising: a crucible for accommodating a crystal growth raw material; at least part of the seed crystal support can be immersed in a melt formed by the crystal growth raw materials in the crucible; the seed crystal support comprises a seed crystal bonding surface; the supporting structure is connected with one side, opposite to the seed crystal bonding surface, of the seed crystal holder; wherein a bonding area is arranged in the middle of the seed crystal bonding surface, a guide structure is arranged on the seed crystal bonding surface, the guide structure can form a guide channel, and the bonding area is located in the guide channel. Due to the arrangement of the guide channel, the flowing effect of the melt can be improved, the uniformity of raw materials in the melt is improved, a seed crystal bonding surface is in full contact with the melt, meanwhile, disordered fluctuation of the melt is smoothened, and the crystal growth quality is improved.

Description

Technical Field

[0001] This specification relates to the field of crystal preparation technology, and in particular to a crystal growth apparatus. Background Technology

[0002] The fabrication of semiconductor electronic devices and optoelectronic devices largely requires single-crystal materials, and their performance is often closely related to the purity, uniformity, and periodicity of the single crystal. Therefore, the preparation of semiconductor single crystals has a significant impact on semiconductor devices.

[0003] Therefore, this application provides a crystal growth apparatus and a raw material recovery method to improve the quality of crystal preparation. Summary of the Invention

[0004] This specification provides a crystal growth apparatus, comprising: a crucible for containing crystal growth raw materials; a seed crystal holder, at least a portion of which is immersable in a melt formed from the crystal growth raw materials within the crucible; the seed crystal holder includes a seed bonding surface; and a support structure connected to one side of the seed crystal holder opposite to the seed bonding surface; wherein the seed bonding surface has a bonding area in its center, and a guide structure is provided on the seed bonding surface, the guide structure forming a guide channel, and the bonding area is located within the guide channel.

[0005] In some embodiments, the seed crystal holder includes a first layer structure, a second layer structure, and a third layer structure arranged sequentially along the height direction. The first layer structure is used to connect with the support structure. The second layer structure is provided with a slot for engaging with a mounting plate. The mounting plate has the seed crystal mounting surface on the side opposite to the first layer structure. The third layer structure is provided with the guide structure.

[0006] In some embodiments, the guide structure includes guide protrusions disposed on both sides of the seed crystal bonding surface, a guide channel is formed between the two guide protrusions, an mounting protrusion is provided in the middle of the guide channel, and the bonding area is located on the mounting protrusion.

[0007] In some embodiments, the guiding structure includes guide protrusions disposed on both sides of the seed crystal bonding surface, a guiding channel is formed between the two guide protrusions, and the bonding area is located in the middle of the guiding channel.

[0008] In some embodiments, the guide structure includes a plurality of guide protrusions arranged around the bonding area, the plurality of guide protrusions extending from the edge of the seed crystal bonding surface toward the bonding area in the middle of the seed crystal bonding surface, and the guide channel is formed between any adjacent guide protrusions.

[0009] In some embodiments, the height difference of the guide structure is less than or equal to 1 mm.

[0010] In some embodiments, the support structure is configured to drive the seed crystal holder to rotate.

[0011] In some embodiments, the seed crystal holder is disposed at the bottom of the crucible, the seed crystal bonding surface is disposed at the top of the seed crystal holder, and the bottom of the seed crystal holder is connected to the bottom of the crucible through the support structure; or, the seed crystal holder is disposed at the top of the melt, the seed crystal bonding surface is located at the bottom of the seed crystal holder, and the support structure is drivenly connected to the second rotating mechanism.

[0012] In some embodiments, the support structure includes a plurality of support rods connected end to end in sequence, with any two adjacent support rods connected by a bearing nesting, and the ratio of the diameter of the seed crystal holder to the diameter of the support rod is 3.5-16.

[0013] In some embodiments, the ratio of the diameter of the seed crystal holder to the inner diameter of the crucible is 4 / 5 to 7 / 8.

[0014] The crystal growth apparatus provided in this specification has the following beneficial effects: (1) By setting a guiding structure on the seed crystal bonding surface to form a guiding channel, a guiding effect is achieved, the flow effect of the melt is increased, and the uniformity of the raw materials in the melt is improved; (2) By setting a guiding channel, the seed crystal bonding surface and the melt are fully contacted, thus improving the quality of crystal growth; (3) The setting of the guiding structure allows the guiding structure to play a buffering role when the melt flows into the guiding structure, effectively smoothing the disordered fluctuations of the melt, reducing the influence of Lorentz force, and improving the quality of crystal growth. Attached Figure Description

[0015] This specification will be further described by way of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting; in these embodiments, the same reference numerals denote the same structures, wherein:

[0016] Figure 1 This is a schematic diagram of the structure of a crystal growth apparatus according to some embodiments of this specification;

[0017] Figure 2 This is a schematic diagram of the seed crystal holder structure shown in some embodiments of this specification;

[0018] Figure 3A This is a schematic diagram of the guide structure shown in some embodiments of this specification;

[0019] Figure 3B This is a schematic diagram of the mounting plate structure according to some embodiments of this specification;

[0020] Figures 4-6 These are schematic diagrams illustrating the structures of different seed crystal bonding surfaces according to some embodiments of this specification;

[0021] Figure 7 This is another schematic diagram of the crystal growth apparatus shown in some embodiments of this specification. Detailed Implementation

[0022] To more clearly illustrate the technical solutions of the embodiments in this specification, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some examples or embodiments of this specification. For those skilled in the art, these drawings can be applied to other similar scenarios without creative effort. Unless obvious from the context or otherwise specified, the same reference numerals in the drawings represent the same structures or operations.

[0023] As indicated in this specification and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0024] The manufacture of semiconductor and optoelectronic devices largely requires single-crystal materials, and their performance is often closely related to the purity, uniformity, and periodicity of the single crystal. Therefore, the preparation of semiconductor single crystals has a significant impact on semiconductor devices. Crystal growth, as a key process in semiconductor single crystal preparation, requires high-quality crystal growth. The liquid-phase method, as one of the main crystal growth techniques, has advantages such as fast growth speed, large crystal size, high-quality grown crystals, and wide applicability. Its basic principle is that the raw material is melted at high temperature and mixed with a flux. Due to supersaturation, the raw material precipitates at the seed crystal, thus achieving crystal growth.

[0025] The crystal growth apparatus provided in this specification, through the design of the seed crystal holder structure, incorporates a guiding structure on the seed crystal bonding surface to form a guiding channel. This guide function enhances the flow of the melt, improves the uniformity of the raw materials within the melt, and ensures sufficient contact between the seed crystal bonding surface and the melt, thereby improving crystal growth quality. Furthermore, when the melt flows into the guiding structure, the structure acts as a buffer, effectively smoothing out disordered melt fluctuations, reducing the influence of Lorentz forces, and further improving crystal growth quality.

[0026] Figure 1 This is a schematic diagram of the structure of a crystal growth apparatus according to some embodiments of this specification.

[0027] like Figure 1 As shown, the crystal growth apparatus 100 may include a crucible 110, a seed crystal holder 120, and a support structure 131. The crucible 110 serves as the reaction vessel for crystal growth, containing crystal growth raw materials (e.g., carbon, silicon, etc.). In some embodiments, during crystal growth, the crystal growth raw materials in the crucible 110 melt into a molten body, facilitating their movement to the seed crystal holder 120 for crystal growth. In some embodiments, the crucible 110 may also contain a fluxing agent, in which the crystal growth raw materials can dissolve or thaw. In some embodiments, the fluxing agent may contain the crystal growth raw materials. In some embodiments, the fluxing agent may also contain transition materials to promote crystal growth. In some embodiments, the fluxing agent may be a mixture of silicon and a small amount of transition metals or rare earth elements (Cr, Co, Al, Ce, etc.). At least a portion of the seed crystal holder 120 is immersed in the molten body within the crucible 110, allowing the molten crystal growth raw materials to move to the seed crystal holder 120 for crystal growth. In some embodiments, the seed crystal holder 120 includes a seed crystal bonding surface 121, which is immersed in the melt (i.e., the seed crystal bonding surface 121 is located below the liquid surface of the melt). The seed crystal bonding surface 121 is used to bond the seed crystal, and the crystal grows starting from the seed crystal. A support structure 131 is connected to the other side of the seed crystal holder 120 opposite to the seed crystal bonding surface 121, and the support structure 131 is used to support and fix the seed crystal holder 120.

[0028] In some embodiments, the crystal growth apparatus 100 may further include a heating component (not shown) that can heat the crucible 110 to provide the environmental conditions for crystal growth. Exemplarily, the heating component may include a heating furnace body, and the crucible 110 may be disposed within the heating furnace body for heating. In some embodiments, the heating component may also adjust the temperature gradient of the crucible 110 to regulate crystal growth.

[0029] Please refer to Figure 1 In some embodiments, the crystal growth material may further include a source rod, which is at least partially immersed in the melt of the crucible 110. A flux can etch the source rod, causing it to deposit and grow on the seed crystal bonding surface 121 via diffusion, dissolving in the melt and acting as a solute. In some embodiments, the source rod may be made of graphite or silicon carbide (SiC) ceramic or a single crystal to provide the raw materials required for crystal growth.

[0030] Figure 2 This is a schematic diagram of the seed crystal holder structure shown in some embodiments of this specification. Figure 3A This is a schematic diagram of the guide structure shown in some embodiments of this specification. Figure 3BThis is a schematic diagram of the mounting plate structure according to some embodiments shown in this specification. Figures 4-6 These are schematic diagrams illustrating the structures of different seed crystal bonding surfaces according to some embodiments of this specification. The following is in conjunction with... Figures 2-6 The structure of seed crystal holder 120 is explained.

[0031] In some embodiments, the seed crystal bonding surface 121 may have a bonding area 1211 in the middle, and a guide structure 124 may be provided on the seed crystal bonding surface 121. The guide structure 124 can form a guide channel 125, and the bonding area 1211 is located in the guide channel 125.

[0032] In some embodiments, the guide structure 124 can guide the flow of the melt, improve the uniformity of the raw materials in the melt, and ensure sufficient contact between the seed crystal bonding surface 121 and the melt, thereby improving the crystal growth quality. On the other hand, when the melt flows into the guide structure 124, the guide structure 124 can act as a buffer, effectively smoothing out the disordered fluctuations of the melt, reducing the influence of Lorentz force, and improving the crystal growth quality.

[0033] Please refer to Figures 2 to 3B In some embodiments, the seed crystal holder 120 includes a first layer structure 120-1, a second layer structure 120-2, and a third layer structure 120-3 arranged sequentially along the height direction. The first layer structure 120-1 of the seed crystal holder 120 is used to connect with the support structure 131. The second layer structure 120-2 of the seed crystal holder 120 is provided with a slot 122 for engaging with a mounting plate 123. The mounting plate 123 has a seed crystal bonding surface 121 on the side opposite to the first layer structure 120-1. The third layer structure 120-3 of the seed crystal holder 120 is provided with a guide structure 124. This multi-layer structure design can reduce the design and manufacturing difficulty of the seed crystal holder 120 and facilitate production.

[0034] In some embodiments, the mounting plate 123 is provided with an extension 123-1. In the installed state, the extension 123-1 can extend out of the slot 122 to facilitate the removal of the mounting plate 123 and to facilitate the disassembly, installation and replacement of the mounting plate 123.

[0035] In some embodiments, the mounting plate 123 may be made of a material with poor heat absorption capacity, so as to keep the seed crystal bonding surface at a lower temperature, enhance the temperature gradient between the seed crystal bonding surface 121 and other regions of the melt in the axial direction, and improve the speed and quality of crystal growth. In some embodiments, the mounting plate 123 may be made of a material with stable mass transfer to improve the quality of crystal growth. In some embodiments, the mounting plate 123 may be made of graphite.

[0036] In some embodiments, the first layer structure 120-1, the second layer structure 120-2, and the third layer structure 120-3 of the seed crystal holder 120 can be either separately connected or integrally formed.

[0037] like Figure 4 As shown, in some embodiments, the guiding structure 124 may include guiding protrusions 1242 disposed on both sides of the seed crystal bonding surface 121, forming a guiding channel 125 between the two guiding protrusions 1242. A mounting protrusion 1243 is provided in the middle of the guiding channel 125, and the bonding area 1211 is located on the mounting protrusion 1243. The melt flows through the guiding channel 125 and then through the bonding area 1211, achieving guiding and buffering effects. Simultaneously, within the guiding channel 125, the guiding channel 125 and the mounting protrusion 1243 form a stepped structure, allowing crystal growth to proceed in a stepped-covered manner. By controlling the crystal to grow against the direction of the steps, the crystal growth is slow but the growth quality is good.

[0038] like Figure 5 As shown, in some embodiments, the guide structure 124 may include guide protrusions 1242 disposed on both sides of the seed crystal bonding surface 121, forming a guide channel 125 between the two guide protrusions 1242, and the bonding area 1211 is located in the middle of the guide channel 125. The melt flows through the guide channel 125 and then through the bonding area 1211, achieving a guiding and buffering effect.

[0039] like Figure 6 As shown, in some embodiments, the guide structure 124 may include a plurality of guide protrusions 1242 surrounding the bonding region 1211. The plurality of guide protrusions 1242 extend from the edge of the seed crystal bonding surface 121 toward the bonding region 1211 in the middle of the seed crystal bonding surface 121, and a guide channel 125 is formed between any adjacent guide protrusions 1242. The melt flows to the bonding region 1211 through the guide channel 125 between the plurality of guide protrusions 1242, thereby achieving a guiding and buffering effect.

[0040] In some embodiments, the guide protrusion 1242 is provided so that during the rotation of the seed crystal holder 120, a small turbulence is formed on the guide protrusion 1242, which changes the flow rate and flow direction of the melt, thereby achieving the guiding and buffering effects.

[0041] In some embodiments, the height difference of the guide structure 124 is less than or equal to 1 mm, so that the bonding area 1211 of the seed crystal bonding surface 121 can be immersed in the melt. For example, for Figure 4 In the structure shown, the end faces of the guide protrusion 1242 and the mounting protrusion 1243 can be located on the same plane, and the height difference between the end face of the guide protrusion 1242 or the mounting protrusion 1243 and the bottom of the guide channel 125 is less than or equal to 1 mm; for Figure 5The structure shown has a height difference of less than or equal to 1 mm between the end face of the guide protrusion 1242 and the bottom of the guide channel 125; for Figure 6 In the structure shown, the end faces of each guide protrusion 1242 are located on the same plane, and the height difference between the end face of any guide protrusion 1242 and the bonding area 1211 is less than or equal to 1 mm.

[0042] In some embodiments, the support structure 131 is configured to drive the seed crystal holder 120 to rotate, thereby increasing the mass transfer rate and enabling the raw material in the melt to precipitate around the seed crystal more quickly, thus improving the crystal growth rate. At the same time, the rotation of the seed crystal holder 120 in the melt can also improve the radial raw material distribution uniformity of the seed crystal bonding surface 121, making the radial growth of the crystal more uniform and improving the crystal growth quality.

[0043] Please refer to Figure 1 In some embodiments, the seed crystal holder 120 may be disposed at the bottom of the crucible 110, the seed crystal bonding surface 121 may be disposed at the top of the seed crystal holder 120, and the bottom of the seed crystal holder 120 may be connected to the bottom of the crucible 110 through a support structure 131.

[0044] At this point, the heating assembly can be configured such that its heating temperature gradually decreases from the top of the melt to the bottom of the crucible 110. That is, the temperature at the top of the melt is higher than the temperature at the bottom (i.e., the area where the seed crystal bonding surface 121 is located), thereby generating convection in the melt. This allows the raw material from the higher-temperature area of ​​the melt to be transported to the lower-temperature area (i.e., the area where the seed crystal bonding surface 121 is located) and deposited and grown, thus promoting the crystal growth rate. For example, the heating temperature near the top of the melt can be 2000℃-2200℃, and the heating temperature near the seed crystal bonding surface 121 (the bottom of the melt) can be 1700℃-1900℃.

[0045] Correspondingly, in order for the support structure 131 to drive the seed crystal holder 120 to rotate and simultaneously fix the seed crystal holder 120, the support structure 131 may include a fixing member (not shown in the figure) fixed to the bottom of the crucible 110, and a rotating member (not shown in the figure) rotatably connected to the fixing member. The rotating member is connected to the bottom of the seed crystal holder 120. Fixing the seed crystal holder 120 through the fixing member prevents instability of the seed crystal holder 120 from affecting crystal growth. The rotating member drives the seed crystal holder 120 to rotate, improving the crystal growth rate and quality. For example, the fixing member may include a fixing cylinder, and the rotating member may include a rotating shaft and a bearing. The rotating shaft is connected to the inner wall of the fixing cylinder through the bearing, and the rotating shaft is connected to the seed crystal holder 120; the rotating shaft rotates relative to the fixing cylinder through the bearing, simultaneously driving the seed crystal holder 120 to rotate.

[0046] In some embodiments, the crystal growth apparatus 100 may further include a first rotating mechanism 141 that drives the support structure 131 to rotate. The first rotating mechanism 141 is disposed outside the crucible 110 to provide a suitable working environment for the first rotating mechanism 141. The first rotating mechanism 141 is magnetically connected to the support structure 131, so that while the first rotating mechanism 141 is located outside the crucible 110, the connection between the first rotating mechanism 141 and the support structure 131 does not damage the crucible 110, preventing leakage of the contents of the crucible 110 (e.g., flux, melt, etc.). The first rotating mechanism 141 can drive the support structure 131 to rotate via magnetic force, thereby causing the seed crystal holder 120 to rotate. Exemplarily, the first rotating mechanism 141 may include a non-contact rotary motor.

[0047] Figure 7 This is another schematic diagram of the crystal growth apparatus shown in some embodiments of this specification. Please refer to... Figure 7 In some embodiments, the seed crystal holder 120 may also be disposed on top of the melt. In this case, the seed crystal bonding surface 121 may be located at the bottom of the seed crystal holder 120, so that the seed crystal bonding surface 121 can be immersed in the melt, and the seed crystal bonding surface 121 can be located below the liquid surface of the melt. In this case, the support structure 131 is connected to the top of the seed crystal holder 120, and the support structure 131 can extend from the opening of the crucible 110.

[0048] In some embodiments, the support structure 131 can be physically connected to the second rotating mechanism 142 to fix the seed crystal holder 120. The seed crystal holder 120 is fixed by direct or indirect connection between the second rotating mechanism 142 and an external support or heating assembly (e.g., a heating furnace body). In some embodiments, the support structure 131 and the second rotating mechanism 142 are drively connected, and the second rotating mechanism 142 drives the seed crystal holder 120 to rotate via the support structure 131. In some embodiments, the second rotating mechanism 142 may include a drive motor, etc.

[0049] At this point, the heating assembly can be configured such that its heating temperature gradually increases from the top of the melt to the bottom of the crucible 110. That is, the temperature at the top of the melt (i.e., the region where the seed crystal bonding surface 121 is located) is lower, and the temperature at the bottom of the melt is higher, thereby generating convection in the melt. This allows the raw material from the higher-temperature region of the melt to be transported to the lower-temperature region (i.e., the region where the seed crystal bonding surface 121 is located) and deposited and grown, thus promoting the crystal growth rate. For example, the heating temperature near the bottom of the melt can be 2000℃-2200℃, and the heating temperature near the seed crystal bonding surface 121 (the top of the melt) can be 1700℃-1900℃.

[0050] In some embodiments, the support structure 131 may include a plurality of support rods connected end to end in sequence, and any two adjacent support rods may be connected by a bearing nesting connection. In some embodiments, the support structure 131 may also include a protective layer, in which the support rods and bearings are disposed, and the protective layer separates the support rods and bearings from the outside environment, thereby providing protection and improving the working stability of the support structure 131.

[0051] The outer ring of the bearing can be connected to the inner wall of the protective layer, and the opposite ends of two adjacent support rods are nested within the inner rings of the corresponding bearings. By limiting the rotational sway of the support rods with bearings, stability can be achieved when the support rods rotate at high speeds. Simultaneously, the bearing configuration ensures that when the support rods rotate, the inner cavity of the bearing is relatively stationary with respect to the support rod, and the outer ring of the bearing is stationary with respect to the protective layer. The wear generated by the bearings during support rod rotation has a minimal impact on the support rods, thus extending the service life of the support structure. Furthermore, bearing replacement is simple and cost-effective after damage, thereby reducing overall operating costs.

[0052] It should be noted that the structure of the aforementioned support structure 131 is the structure of the support structure 131 when the seed crystal holder 120 is placed on top of the melt in the crucible 110.

[0053] In some embodiments, the sides and top of the seed crystal holder 120 may be covered with a protective layer to protect the seed crystal holder 120, isolate the seed crystal holder 120 from the melt, and minimize the occurrence of polycrystalline growth on the seed crystal holder 120. In some embodiments, the protective layer may be fixed to the surface of the seed crystal holder by means of threaded connection or adhesive bonding.

[0054] In some embodiments, the protective layer material has high-temperature resistance to adapt to the crystal growth environment. In some embodiments, to avoid interfering with crystal growth, the protective layer material has high physicochemical stability and exhibits non-wetting properties with the melt (e.g., flux). In some embodiments, the protective layer material may include at least one of SiC, Si3N4, SiO2, Al2O3, or MgO.

[0055] In some embodiments, the thickness of the protective layer can be 0.5 mm to 20 mm to isolate the seed crystal holder 120 from the melt. In some embodiments, the thickness of the protective layer can be 1 mm to 15 mm to meet design requirements.

[0056] If the diameter of the seed crystal holder 120 differs too much from the inner diameter of the crucible 110, the melt flow rate will be low when the seed crystal holder 120 rotates, leading to uneven material distribution within the melt and insufficient contact between the melt and the seed crystal bonding surface 121, thus affecting crystal growth. If the diameter of the seed crystal holder 120 is too close to the inner diameter of the crucible 110, interference may occur when the seed crystal holder 120 rotates, posing a safety hazard. In some embodiments, to improve crystal growth and safety, the ratio of the diameter of the seed crystal holder 120 to the inner diameter of the crucible 110 can be 4 / 5 to 7 / 8. In some embodiments, to further improve crystal growth, the ratio of the diameter of the seed crystal holder 120 to the inner diameter of the crucible 110 can be 5 / 6 to 6 / 7.

[0057] In some embodiments, the diameter of the support rod of the support structure 131 affects the rotational speed of the seed crystal holder 120 and the delivery rate of the cooling medium. If the diameter of the support structure 131 is too small, the rotational speed of the seed crystal holder 120 will be limited, and the delivery rate of the cooling medium will be too low, resulting in a high temperature at the seed crystal bonding surface 121, which will affect crystal growth. If the diameter of the support structure 131 is too large, it will increase the installation difficulty and material costs. In some embodiments, to reduce material costs and improve crystal growth quality, the ratio of the diameter of the seed crystal holder 120 to the diameter of the support rod can be 3.5-16. In some embodiments, to further improve crystal growth quality, the ratio of the diameter of the seed crystal holder 120 to the diameter of the support rod can be 8-10.

[0058] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0059] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0060] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0061] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ general methods of digit preservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such numerical values ​​are set as precisely as feasible.

[0062] Finally, it should be understood that the embodiments described in this application are merely illustrative of the principles of the embodiments of this application. Other modifications may also fall within the scope of this application. Therefore, alternative configurations of the embodiments of this application are considered as examples and not limitations, and are regarded as consistent with the teachings of this application. Accordingly, the embodiments of this application are not limited to the embodiments explicitly described and illustrated in this application.

Claims

1. A crystal growth apparatus, characterized in that, The device includes: Crucibles are used to hold raw materials for crystal growth. The seed crystal holder, at least a portion of which is capable of being immersed in the melt formed from the crystal growth raw material within the crucible; the seed crystal holder includes a seed crystal bonding surface; A support structure is provided to connect the side of the seed crystal holder opposite to the bonding surface of the seed crystal. The seed crystal bonding surface has a bonding area in the middle, and a guide structure is provided on the seed crystal bonding surface. The guide structure can form a guide channel, and the bonding area is located in the guide channel.

2. The crystal growth apparatus as described in claim 1, characterized in that, The seed crystal holder includes a first layer structure, a second layer structure, and a third layer structure arranged sequentially along the height direction. The first layer structure is used to connect with the supporting structure; The second layer structure is provided with a slot for engaging with a mounting plate. The mounting plate has a seed crystal mounting surface on the side opposite to the first layer structure. The third layer structure is provided with the guide structure.

3. The crystal growth apparatus as described in claim 1, characterized in that, The guiding structure includes guide protrusions disposed on both sides of the seed crystal bonding surface, a guiding channel is formed between the two guide protrusions, an installation protrusion is provided in the middle of the guiding channel, and the bonding area is located on the installation protrusion.

4. The crystal growth apparatus as described in claim 1, characterized in that, The guiding structure includes guide protrusions disposed on both sides of the seed crystal bonding surface, and the guide channel is formed between the two guide protrusions. The bonding area is located in the middle of the guide channel.

5. The crystal growth apparatus as described in claim 1, characterized in that, The guiding structure includes a plurality of guiding protrusions arranged around the bonding area. The plurality of guiding protrusions extend from the edge of the seed crystal bonding surface toward the bonding area in the middle of the seed crystal bonding surface, and the guiding channel is formed between any adjacent guiding protrusions.

6. The crystal growth apparatus as described in claim 1, characterized in that, The height difference of the guide structure is less than or equal to 1 mm.

7. The crystal growth apparatus as described in claim 1, characterized in that, The support structure is configured to drive the seed crystal holder to rotate.

8. The crystal growth apparatus as described in claim 7, characterized in that, The seed crystal holder is disposed at the bottom of the crucible, the seed crystal bonding surface is disposed at the top of the seed crystal holder, and the bottom of the seed crystal holder is connected to the bottom of the crucible through the support structure; Alternatively, the seed crystal holder is disposed on the top of the melt, the seed crystal bonding surface is located at the bottom of the seed crystal holder, and the support structure is connected to the second rotating mechanism via transmission.

9. The crystal growth apparatus as described in claim 8, characterized in that, The support structure includes multiple support rods connected end to end in sequence. Any two adjacent support rods are connected by a bearing nesting. The ratio of the diameter of the seed crystal holder to the diameter of the support rod is 3.5-16.

10. The crystal growth apparatus as described in claim 1, characterized in that, The ratio of the diameter of the seed crystal holder to the inner diameter of the crucible is 4 / 5 to 7 / 8.

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