Microelectronic mechanical component and method for producing microelectronic mechanical component

Abstract

The invention relates to a micro-electromechanical MEMS component (100) for determining ambient pressure and / or acoustic pressure, comprising a parallel capacitive plate structure (101) comprising a fixed electrode (103) and a movable electrode (105); the fixed electrode comprises first and second fixed electrode plates (107, 109); the movable electrode comprises a first movable electrode plate (111) and a second movable electrode plate (113) connected with the first movable electrode plate (111); the first and second fixed electrode plates are spaced apart from each other in an offset direction; defining a first functional layer (F1) of the MEMS component by means of the first fixed electrode plate and defining a second functional layer (F2) by means of the second fixed electrode plate; the first movable electrode plate is arranged in the second functional layer and is arranged opposite to the first fixed electrode plate; the second movable electrode plate is arranged in the first functional layer and is arranged opposite to the second fixed electrode plate; the first and second movable electrode plates may collectively be offset from the first and second functional layers by offset of the movable electrodes.

Description

Technical Field

[0001] This invention relates to a microelectromechanical component and a method for manufacturing the microelectromechanical component. Background Technology

[0002] Microelectromechanical components, especially MEMS capacitive pressure sensors, MEMS capacitive microphones, and corresponding manufacturing methods are known from existing technologies. Summary of the Invention

[0003] The objective of this invention is to provide an improved microelectromechanical component and a corresponding method for manufacturing the microelectromechanical component.

[0004] This task is solved by the MEMS components and methods according to the present invention. Advantageous embodiments are as described in the specification.

[0005] According to one aspect, a microelectromechanical (MEMS) component for determining environmental pressure and / or sound pressure is provided, having a parallel capacitor plate structure, wherein the capacitor plate structure includes a fixed electrode and a movable electrode that is offset relative to the fixed electrode in an offset direction, wherein the fixed electrode includes a first fixed electrode plate and a second fixed electrode plate, wherein the movable electrode includes a first movable electrode plate and a second movable electrode plate connected to the first movable electrode plate, wherein the first fixed electrode plate and the second fixed electrode plate are spaced apart from each other in an offset direction, wherein a first functional layer of the MEMS component is defined by the first fixed electrode plate and a second functional layer of the MEMS component is defined by the second fixed electrode plate, wherein the first movable electrode plate is disposed in the second functional layer and is disposed opposite to the first fixed electrode plate, wherein the second movable electrode plate is disposed in the first functional layer and is disposed opposite to the second fixed electrode plate, wherein the first movable electrode plate and the second movable electrode plate can be offset together from the first functional layer and the second functional layer by offset of the movable electrode.

[0006] This enables the provision of an improved microelectromechanical component (MEMS). The MEMS component (hereinafter referred to as a MEMS component) includes a capacitor plate structure with fixed electrodes and movable electrodes. The fixed electrodes comprise at least two fixed electrode plates, and the movable electrodes similarly comprise two movable electrode plates. The capacitance change between the electrodes can be determined by moving the movable electrode plates relative to the fixed electrode plates. The fixed electrode plates, spaced apart from each other along the offset direction of the movable electrodes, define two functional layers of the MEMS component. The movable electrode plates are spaced apart from each other along the offset direction and arranged in the two functional layers. By offsetting the movable electrodes, the movable electrode plates can be offset outward from the first and second functional layers, thereby changing the spacing between the movable electrode plates and the fixed electrode plates, thereby causing a capacitance change between the electrodes. The MEMS component of the present invention uses only two functional layers, thus achieving a simplified structure for the MEMS component.

[0007] According to one embodiment, the MEMS component is configured for a differential capacitance measurement method.

[0008] This enables the following technical advantages: by using differential capacitance measurement methods, precise determination of environmental pressure or sound pressure can be achieved through MEMS components.

[0009] According to one embodiment, when the movable electrode is offset relative to the fixed electrode, the first distance between the first fixed electrode plate and the first movable electrode plate increases or decreases, and the second distance between the second fixed electrode plate and the second movable electrode plate decreases or increases in the opposite direction to the first distance.

[0010] This allows for the following technical advantages: a differential capacitance measurement method can be achieved by correspondingly offsetting the first and second movable electrode plates of the movable electrode relative to the first and second fixed electrode plates of the fixed electrode. When the movable electrode is offset relative to the fixed electrode, the first distance between the first fixed electrode plate and the first movable electrode plate increases or decreases, while the second distance between the second fixed electrode plate and the second movable electrode plate changes accordingly in the opposite direction to the first distance. This generates two different capacitances, thereby realizing the differential capacitance measurement method.

[0011] According to one embodiment, the movable electrode is offsetly supported on the fixed electrode by a spring structure.

[0012] This enables the following technical advantages: the spring structure provides a stable, offset support for the movable electrode.

[0013] According to one embodiment, the MEMS component has a frame structure, wherein the movable electrode is connected to the frame structure via a spring structure.

[0014] This enables the following technical advantages: the frame structure can reliably and offsetly support the movable electrode.

[0015] According to one embodiment, the second movable electrode plate is connected to the first fixed electrode plate via a first spring element, wherein the first movable electrode plate is connected to the second fixed electrode plate via a second spring element.

[0016] This allows for the following technical advantages: the first movable electrode plate and the second movable electrode plate can be offsetly connected to the first fixed electrode plate and the second fixed electrode plate via the first spring element and the second spring element. This provides a robust, parallel capacitor plate structure that still exhibits the high response performance of the movable electrodes.

[0017] According to one embodiment, the spring structure is constructed as a first spring silicon layer and a second spring silicon layer, wherein the first spring silicon layer is constructed on a first fixed electrode plate and a second movable electrode plate, and wherein the second spring silicon layer is constructed on the second fixed electrode plate and the first movable electrode layer.

[0018] This allows for the simple construction of a spring structure using a first spring silicon layer and a second spring silicon layer. Furthermore, the first and second spring silicon layers enable precise and reliable response performance of the spring structure.

[0019] According to one embodiment, the first spring silicon layer and the second spring silicon layer fluidically seal the intermediate space between the fixed electrode and the movable electrode.

[0020] This achieves the following technical advantages: by fluid sealing the intermediate space between the fixed electrode and the movable electrode using a first spring silicon layer and a second spring silicon layer, no additional sealant is required for sealing the intermediate space.

[0021] According to one embodiment, the intermediate space between the fixed electrode and the movable electrode is a vacuum.

[0022] This enables the movable electrode to have a precise and highly sensitive response to changes in environmental pressure or sound pressure.

[0023] According to one embodiment, the first fixed electrode plate and / or the second fixed electrode plate have through openings.

[0024] This enables the following technical advantages: through the through openings in the first and second fixed electrode plates, a fluid connection can be achieved between the intermediate space between the fixed electrode and the movable electrode and the ambient atmosphere of the MEMS component.

[0025] According to one embodiment, the first fixed electrode plate is fixedly connected to the frame structure of the MEMS component via at least one tab element.

[0026] This enables the following technical advantages: a stable and secure attachment between the first fixed electrode plate and the frame structure is achieved through the bonding element.

[0027] According to one embodiment, the fixed electrode has a plurality of first fixed electrode plates and / or second fixed electrode plates, wherein the first fixed electrode plates are respectively arranged in a first functional layer, and the second fixed electrode plates are respectively arranged in a second functional layer, wherein the movable electrode has a plurality of first movable electrode plates and / or second movable electrode plates, wherein the first movable electrode plates are respectively arranged in the second functional layer, and the second movable electrode plates are respectively arranged in the first functional layer.

[0028] This achieves the following technical advantages: by using multiple first and / or second fixed electrode plates for the fixed electrode and corresponding multiple first and / or second movable electrode plates for the movable electrode, the absolute values ​​of the first and second capacitances required for differential capacitance measurement methods between the fixed and movable electrodes can be increased, without significantly increasing the area of ​​the first and second fixed electrode plates and / or the first and second movable electrode plates. This improves the measurement accuracy and structural strength of MEMS components.

[0029] According to one embodiment, in a first functional layer, a first fixed electrode plate and a second movable electrode plate are alternately arranged in a direction perpendicular to the offset direction, wherein in a second functional layer, the second fixed electrode plate and the first movable electrode plate are alternately arranged in a direction perpendicular to the offset direction.

[0030] This achieves the following technical advantages: by alternately arranging the first fixed electrode plate and the second movable electrode plate in the first functional layer, and alternately arranging the second fixed electrode plate and the first movable electrode plate in the second functional layer, a space-saving arrangement of the parallel capacitor plate structure can be realized, and the sensitive response performance of the movable electrode can be achieved.

[0031] According to one embodiment, the MEMS component is configured as a capacitive pressure sensor or a capacitive microphone.

[0032] This enables the provision of an improved capacitive pressure sensor or an improved capacitive microphone.

[0033] According to one aspect, a method for manufacturing a MEMS component according to one of the above embodiments is provided, the method comprising the following steps: A substrate having an oxide layer and a first electrode silicon layer constructed on the oxide layer is provided; Silicon etching is performed in the first electrode silicon layer to create at least one gap, wherein a first layer element and a second layer element are generated through the gap in the first electrode silicon layer; A first spring silicon layer is applied onto a first electrode silicon layer, wherein the first spring silicon layer has a smaller layer thickness than the first electrode silicon layer, and wherein first layer elements and second layer elements of the first electrode silicon layer are interconnected through the first spring silicon layer. Apply another oxide layer onto the first spring silicon layer; Oxidation etching is performed in another oxide layer to create at least one gap; A second electrode silicon layer is applied onto another oxide layer, wherein the connection between the second electrode silicon layer and a first spring silicon layer covering a second element of the first electrode silicon layer is achieved through a gap in the other oxide layer; The second electrode silicon layer is etched, and at least two gaps are generated in the second electrode silicon layer, wherein the third layer element, the fourth layer element and the fifth layer element are generated through the gaps in the second electrode silicon layer; A second spring silicon layer is applied onto a second electrode silicon layer, wherein the second spring silicon layer has a smaller layer thickness than the second electrode silicon layer, and wherein the third to fifth layer elements of the second electrode silicon layer are interconnected through the second spring silicon layer; and The substrate and oxide layer are removed by oxidation etching and backside-trenching, wherein a first fixed electrode plate is formed by a first layer element and a second movable electrode plate is formed by a second layer element, wherein a wall element of the MEMS component frame structure is formed by a fourth layer element, the first movable electrode plate is formed by a fourth layer element and the second fixed electrode plate is formed by a fifth layer element, wherein a spring structure for offsetly supporting the movable electrode is formed by a first spring silicon layer and a second spring silicon layer.

[0034] This provides an improved method for manufacturing MEMS components, with the aforementioned technical advantages.

[0035] According to one embodiment, the silicon layer is constructed as a polycrystalline silicon layer and is formed by a deposition process.

[0036] This enables the following technological advantages, resulting in the simple fabrication of silicon layers. Attached Figure Description

[0037] Embodiments of the present invention will be described with reference to the accompanying drawings. The drawings show: Figure 1. Schematic cross-sectional view of a microelectromechanical component according to one embodiment; Figure 2. Another schematic cross-sectional view of a microelectromechanical component according to another embodiment; Figure 3. Another schematic cross-sectional view of a microelectromechanical component according to another embodiment; Figure 4. Schematic diagram of the microelectromechanical component from Figure 3; Figure 5 is a schematic diagram of a method for manufacturing microelectromechanical components according to one embodiment. Detailed Implementation

[0038] Figure 1 shows a schematic cross-sectional view of a microelectromechanical component 100 according to one embodiment.

[0039] Figure 1a The image shows a MEMS component 100 in an unoffset state. Figure 1b The offset of MEMS component 100 is shown in the figure.

[0040] In the illustrated embodiment, the MEMS component 100 includes a capacitor plate structure 101 having a fixed electrode 103 and a movable electrode 105 supported offset relative to the fixed electrode. The fixed electrode 103 has a first electrode plate 107 and a second electrode plate 109, which are spaced apart from each other with respect to the offset direction D. A first functional layer F1 of the MEMS component 100 is defined by the first electrode plate 107, and a second functional layer F2 of the MEMS component is defined by the second fixed electrode plate 109.

[0041] Similarly, the movable electrode 105 includes a first movable electrode plate 111 and a second movable electrode plate 113, which are spaced apart from each other with respect to the offset direction D. The first movable electrode plate 111 is located in the second functional layer F2 and is arranged opposite to the first fixed electrode plate 107. The second movable electrode plate 113 is located in the first functional layer F1 and is arranged opposite to the second fixed electrode plate 109. The first movable electrode plate 111 and the second movable electrode plate 113 are fixedly connected to each other.

[0042] In the illustrated embodiment, the MEMS component 100 has a substrate 133 and a frame structure 117 with opposing wall elements 159.

[0043] The first fixed electrode plate 107 and the second fixed electrode plate 109 are fixedly connected to the frame structure 117.

[0044] In the illustrated embodiment, the movable electrode 105 is connected to the frame structure 1171 via a spring structure 115 in a manner in which it is supported offset.

[0045] The spring structure 117 includes a first spring element 119 and a second spring element 121. The first spring element 119 connects the first fixed electrode plate 107 to the second movable electrode plate 113, and allows the second movable electrode plate 113 to be offset relative to the first fixed electrode plate 107; similarly, the second spring element 121 connects the second fixed electrode plate 109 to the first movable electrode plate 111. The first movable electrode plate 111 can be springily offset relative to the second fixed electrode plate 109 by the second spring element 121.

[0046] Regarding the offset direction D, the distance between the first fixed electrode plate 107 and the first movable electrode plate 111 is a first distance A1. The distance between the second fixed electrode plate 109 and the second movable electrode plate 113 is a second distance A2.

[0047] A first capacitance C1 is generated between the first fixed electrode 107 and the first movable electrode plate 111 by means of the area of ​​the first and second fixed and movable electrode plates 107, 109, 111, 113 that are opposed to each other, by means of the dielectric constant of the medium in the intermediate space 127 between the fixed electrode 103 and the movable electrode 105, and by means of the first spacing A1 and the second spacing A2 between the electrode plates, and a second capacitance C2 is generated between the second fixed electrode plate 109 and the second movable electrode plate 113.

[0048] Figure 1a The diagram shows the unoffset state of MEMS component 100. In the unoffset state, the first pitch A1 and the second pitch A2 are equal. Therefore, the first capacitance C1 and the second capacitance C2 are also equal.

[0049] exist Figure 1b The diagram illustrates an offset where the first movable electrode plate 111 moves toward the first fixed electrode plate 107, and correspondingly, the second movable electrode plate 113 moves in the opposite direction away from the second fixed electrode plate 109. This causes the first gap A1 between the first fixed electrode plate 107 and the first movable electrode plate 111 to decrease relative to the unoffset state, while the second gap A2 between the second fixed electrode plate 109 and the second movable electrode plate 113 increases relative to the unoffset state. Under the shown offset, the first gap A1 is smaller than the second gap A2. This causes the first capacitance C1 to be larger than the second capacitance C2 in the shown offset.

[0050] By implementing the differential capacitance measurement method, the precise changes in capacitances C1 and C2 can be obtained.

[0051] Based on the capacitance change between the fixed electrode 103 and the movable electrode 105, the environmental pressure change and / or sound pressure change in the environment of the MEMS component 100 can be calculated.

[0052] In the illustrated embodiment, the first spring element 119 of the spring structure 115 is constructed from a first spring silicon layer 123. The second spring element 121 of the spring structure 115 is constructed from a second spring silicon layer 125. In the illustrated embodiment, the intermediate space 127 between the fixed electrode 103 and the movable electrode 105 is fluidically sealed by the first spring silicon layer 123 and the second spring silicon layer 125. Therefore, in the illustrated embodiment, there is no fluidic communication between the intermediate space 127 (between the fixed electrode 103 and the movable electrode 105) and the environment of the MEMS component 100.

[0053] According to one embodiment, the intermediate space 127 may also be in a vacuum.

[0054] In the illustrated embodiment, a receiving space 161 is formed between the first functional layer F1 defined by the first fixed electrode plate 107 and the substrate 133. This receiving space 161 allows the movable electrode 107 to be offset towards the substrate 133 along the offset direction D. The spring structure 115 prevents the second movable electrode plate 113 from blocking the substrate 133. The receiving space 171 provides sufficient movement space for the offset of the movable electrode 105 (and especially the second movable electrode plate 113).

[0055] According to one embodiment, the first movable electrode plate 111 and the second movable electrode plate 113 may be two interconnected portions of a common movable electrode plate of the movable electrode 105. The movable electrode plate of the movable electrode 105 is not constructed as a flat plate, but rather comprises at least two distinct plate levels, each formed by the first movable electrode plate 111 and the second movable electrode plate 113.

[0056] Similarly, the first fixed electrode plate 107 and the second fixed electrode plate 109 can also be two interconnected portions of a common fixed electrode plate of the fixed electrode 103. The fixed electrode plate of the fixed electrode 103 is not constructed as a flat plate, but rather comprises at least two different plate levels, which are formed by the first fixed electrode plate 107 and the second fixed electrode plate 109.

[0057] Figure 2 shows another schematic cross-sectional view of a microelectromechanical component 100 according to another embodiment.

[0058] The implementation shown in Figure 2 is based on the implementation in Figure 1 and includes all the features described therein.

[0059] Similar to Figure 1, Figure 2a It also shows the unoffset state, while Figure 2b The offset of MEMS component 100 is shown in the figure.

[0060] Unlike the embodiment shown in FIG1, in the illustrated embodiment, the first fixed electrode plate 107 and the second fixed electrode plate 109 have through-holes 129. Similarly, the substrate 123 has through-holes 129. Through these through-holes 129, fluidic communication is achieved between the receiving space 161 and the intermediate space 127 (between the fixed electrode 103 and the movable electrode 105) and the environment of the MEMS component 100.

[0061] Figure 3 shows another schematic cross-sectional view of a microelectromechanical component 100 according to another embodiment.

[0062] The implementation in Figure 3 is based on the implementation in Figure 2 and includes all the features described therein.

[0063] Unlike the embodiment in Figure 1, the fixed electrode 103 has two first fixed electrode plates 107. Similarly, the movable electrode 105 has two first movable electrode plates 111. The two first fixed electrode plates 107 are respectively arranged in the first functional layer F1, and the two first movable electrode plates 111 are arranged in the second functional layer F2. The two first movable electrode plates 111 are respectively connected to the second movable electrode plate 113.

[0064] Similar to the embodiment in Figure 1, the first fixed electrode plate 107 and the first movable electrode plate 111 are arranged opposite each other, while the second fixed electrode plate 109 and the second movable electrode plate 113 are arranged opposite each other.

[0065] In the illustrated embodiment, within the first functional layer F1, a first fixed electrode plate 107 and a second movable electrode plate 113 are arranged alternately side-by-side with respect to a direction D1 perpendicular to the offset direction D. The second movable electrode plate 113 is located between the two first fixed electrode plates 107. Similarly, within the second functional layer F2, along direction D1, a first movable electrode plate 111 and a second fixed electrode plate 109 are arranged alternately. The second fixed electrode plate 109 is therefore located between the two first movable electrode plates 111.

[0066] In the illustrated embodiment, the receiving space 161 is directly integrated into the substrate 133. Similar to the embodiments of FIG1 and FIG2, this receiving space 161 enables the offset of the second movable electrode layer 113.

[0067] In the illustrated embodiment, the fixed electrode 103 has two first fixed electrode plates 107 and one second fixed electrode plate 109. Similarly, the movable electrode 105 has two first movable electrode plates 111 and one second movable electrode plate 113. Unlike the illustrated embodiment, the fixed electrode 103 and the movable electrode 105 have a different number of first and second fixed or movable electrode plates 107, 109, 111, 113 than those shown.

[0068] Figure 4 shows a schematic diagram of the microelectromechanical component 100 of Figure 3.

[0069] In the illustrated embodiment, the first fixed electrode plate 107 is constructed as an integral plate with a circular through-hole 161. The second movable electrode plate 113 is correspondingly constructed in a circular shape and is arranged within the through-hole 129. The second movable electrode plate 113 is connected to the first fixed electrode plate 107 via a first spring silicon layer 123.

[0070] like Figure 4a As shown in the figure, the second fixed electrode plate 109 has a circular periphery and is fixedly connected to the frame structure 117 by two tab elements 131.

[0071] Two first movable electrode plates 111 are located on two opposite sides of the second fixed electrode plate 109 and are separated by the second fixed electrode plate 109 and two contact elements 131. The two first movable electrode plates 111 are connected to the frame structure 117, the second fixed electrode plate 109 and the two contact elements 131 via a second spring silicon layer 125. Furthermore, the embodiment of FIG3 can be understood as a cross-section along section axis B of the first and second functional layers F1, F2 of FIG4.

[0072] Figure 5 shows a schematic diagram of a method for manufacturing a microelectromechanical component 100 according to one embodiment.

[0073] To manufacture the MEMS component 100 according to the above embodiment, firstly in Figure 5a The substrate 103 is provided, on which an oxide layer 135 and a first electrode silicon layer 137 are formed.

[0074] like Figure 5b As shown in the diagram, an etching process is then performed, and gaps 139 are constructed in the first electrode silicon layer 137. Two first-layer elements 141 and one second-layer element 143 are constructed through the gaps 139 in the first electrode silicon layer 137.

[0075] like Figure 5cAs shown in the diagram, a first spring silicon layer 123 is then applied on the first electrode silicon layer 137. Here, the first spring silicon layer has a significantly smaller layer thickness than the first electrode silicon layer 137. The first spring silicon layer 123 is constructed on the first layer element 141 and the second layer element 143, as well as in the gap 139.

[0076] like Figure 5d As shown in the diagram, another oxide layer 145 is then applied to the first spring silicon layer 123.

[0077] like Figure 5e As shown in the diagram, gaps 147 are then etched into another oxide layer 145. A second electrode silicon layer 149 is then applied onto the other oxide layer 145.

[0078] like Figure 5f As shown in the diagram, gaps 151 are then etched into the second electrode silicon layer 149. Two third-layer elements 153, two fourth-layer elements 155, and one fifth-layer element 157 are formed through these gaps 151. Subsequently, a second spring silicon layer 125 is applied to the second electrode silicon layer 149. This second spring silicon layer 125 is then applied to the two third-layer elements 153, the two fourth-layer elements 155, the fifth-layer element 157, and into the gaps 151.

[0079] like Figure 5g As shown in the diagram, the oxide layers 135 and 145 are then removed by corresponding gas etching. Furthermore, a trench etching process is performed to introduce a receiving space 161 in the substrate 163. Figure 5g The diagram shows a MEMS component 100 produced according to the embodiment shown in FIG3. Here, two first layer elements 141 of the first electrode silicon layer 137 constitute two first fixed electrode plates 107 of the fixed electrode 103. A second layer element 143 of the first electrode silicon layer 137 constitutes a second movable electrode plate 113 of the movable electrode 105. Two third layer elements 153 of the second electrode silicon layer 149 constitute wall elements 159 of the frame structure 117. Two fourth layer elements 155 of the second electrode silicon layer 149 constitute two first movable electrode plates 111 of the movable electrode 105. A fifth layer element 157 of the second electrode silicon layer 149 constitutes a second fixed electrode plate 109 of the fixed electrode 103. A first spring silicon layer 123 constitutes a first spring element 119 of the spring structure 115. A second spring silicon layer 125 constitutes a second spring element 121 of the spring structure 115.

[0080] According to one embodiment, the first electrode silicon layer 137 and the second electrode silicon layer 149 are constructed as polycrystalline silicon layers.

Claims

1. A microelectromechanical system (MEMS) component (100) for determining environmental pressure and / or sound pressure, having a parallel capacitor plate structure (101), wherein, The capacitor plate structure (101) includes a fixed electrode (103) and a movable electrode (105) offset relative to the fixed electrode (103) along an offset direction (D). The fixed electrode (103) includes a first fixed electrode plate (107) and a second fixed electrode plate (109). The movable electrode (105) includes a first movable electrode plate (111) and a second movable electrode plate (113) connected to the first movable electrode plate (111). The first fixed electrode plate (107) and the second fixed electrode plate (109) are spaced apart from each other along the offset direction (D). The first fixed electrode plate (107) defines the MEMS component. The first functional layer (F1) of the MEMS component is defined by the second fixed electrode plate (109), wherein the first movable electrode plate (111) is arranged in the second functional layer (F2) and is arranged opposite to the first fixed electrode plate (107), wherein the second movable electrode plate (113) is arranged in the first functional layer (F1) and is arranged opposite to the second fixed electrode plate (109), wherein the first movable electrode plate (111) and the second movable electrode plate (113) can be offset together from the first functional layer (F1) and the second functional layer (F2) by the offset of the movable electrode (105).

2. The MEMS component (100) according to claim 1, wherein, The MEMS component (100) is configured for a differential capacitance measurement method.

3. The MEMS component (100) according to claim 1 or 2, wherein, When the movable electrode (105) is offset relative to the fixed electrode (103), the first gap (A1) between the first fixed electrode plate (107) and the first movable electrode plate (111) increases or decreases, and the second gap (A2) between the second fixed electrode plate (109) and the second movable electrode plate (113) decreases or increases in the opposite direction to the first gap (A1).

4. The MEMS component (100) according to any one of the preceding claims, wherein, The movable electrode (105) is offsetly supported on the fixed electrode (103) by a spring structure (115).

5. The MEMS component (100) according to claim 4, wherein, The MEMS component (100) has a frame structure (117), wherein the movable electrode (105) is connected to the frame structure (117) via the spring structure (115).

6. The MEMS component (100) according to claim 4 or 5, wherein, The second movable electrode plate (113) is connected to the first fixed electrode plate (107) via a first spring element (119), wherein the first movable electrode plate (111) is connected to the second fixed electrode plate (109) via a second spring element (121).

7. The MEMS component (100) according to any one of claims 4 to 6, wherein, The spring structure (115) is constructed as a first spring silicon layer (123) and a second spring silicon layer (125), wherein the first spring silicon layer (123) is constructed on the first fixed electrode plate (107) and the second movable electrode plate (113), and wherein the second spring silicon layer (125) is constructed on the second fixed electrode plate (109) and the first movable electrode plate (111).

8. The MEMS component (100) according to claim 7, wherein, The first spring silicon layer (123) and the second spring silicon layer (125) fluidically enclose the intermediate space (127) between the fixed electrode (103) and the movable electrode (105).

9. The MEMS component (100) according to claim 8, wherein, The intermediate space (127) between the fixed electrode (103) and the movable electrode (105) is a vacuum.

10. The MEMS component (100) according to any one of the preceding claims, wherein, The first fixed electrode plate (107) and / or the second fixed electrode plate (109) have through openings (129).

11. The MEMS component (100) according to any one of the preceding claims, wherein, The second fixed electrode plate (109) is fixedly connected to the frame structure (117) of the MEMS component (100) via at least one tab element (131).

12. The MEMS component (100) according to any one of the preceding claims, wherein, The fixed electrode (103) has a plurality of first fixed electrode plates (107) and / or second fixed electrode plates (109), wherein the first fixed electrode plates (107) are respectively arranged in the first functional layer (F1), and the second fixed electrode plates (109) are respectively arranged in the second functional layer (F2). The movable electrode (105) has a plurality of first movable electrode plates (111) and / or second movable electrode plates (113), wherein the first movable electrode plates (111) are respectively arranged in the second functional layer (F2), and the second movable electrode plates (113) are respectively arranged in the first functional layer (F1).

13. The MEMS component (100) according to any one of the preceding claims, wherein, In the first functional layer (F1), a first fixed electrode plate (107) and a second movable electrode plate (113) are alternately arranged along a direction (D1) perpendicular to the offset direction (D), wherein in the second functional layer (F2), a second fixed electrode plate (109) and a first movable electrode plate (111) are alternately arranged along a direction (D2) perpendicular to the offset direction (D).

14. The MEMS component (100) according to any one of the preceding claims, wherein, The MEMS component (100) is configured as a capacitive pressure sensor or a capacitive microphone.

15. A method for manufacturing a MEMS component according to any one of claims 1 to 14, the method comprising the following steps: A substrate (133) is provided, the substrate having an oxide layer (135) and a first electrode silicon layer (137) constructed on the oxide layer (135). Silicon etching is performed in the first electrode silicon layer (137) to create at least one gap (139), wherein a first layer element (141) and a second layer element (143) are generated through the gap (139) in the first electrode silicon layer (137). A first spring silicon layer (123) is applied on the first electrode silicon layer (137), wherein the first spring silicon layer (123) has a smaller layer thickness than the first electrode silicon layer (137), wherein the first layer element (141) and the second layer element (143) of the first electrode silicon layer (137) are interconnected through the first spring silicon layer (123). Another oxide layer (145) is applied to the first spring silicon layer (123); Oxidation etching is performed in the other oxide layer (145) to create at least one gap (147); A second electrode silicon layer (149) is applied to the other oxide layer (145), wherein the connection between the second electrode silicon layer (149) and the first spring silicon layer (123) of the second layer element (143) covering the first electrode silicon layer (137) is achieved through the gap (147) in the other oxide layer (145); Silicon etching is performed on the second electrode silicon layer (149), and at least two gaps (151) are generated in the second electrode silicon layer (149), wherein a third layer element (153), a fourth layer element (155) and a fifth layer element (157) are generated through the gaps (151) in the second electrode silicon layer (149). A second spring silicon layer (125) is applied to the second electrode silicon layer (149), wherein the second spring silicon layer (125) has a smaller layer thickness than the second electrode silicon layer (149), and wherein the third to fifth layer elements (153, 155, 157) of the second electrode silicon layer (149) are interconnected through the second spring silicon layer (125); and The substrate (133) and the oxide layer (135, 145) are removed by oxidation etching and back trench etching, wherein a first fixed electrode plate (107) is formed by the first layer element (141) and a second movable electrode plate (109) is formed by the second layer element (143), wherein a wall element (159) of the frame structure (117) of the MEMS component (100) is formed by the third layer element (153), the first movable electrode plate (111) is formed by the fourth layer element (155) and the second fixed electrode plate (109) is formed by the fifth layer element (157), wherein a spring structure (115) for offsetly supporting the movable electrode (105) is formed by the first spring silicon layer (123) and the second spring silicon layer (125).

16. The method according to claim 15, wherein, The silicon layer is a polycrystalline silicon layer and is formed through a deposition process.

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