Atomic gas chamber and preparation method thereof

Abstract

The invention relates to an atomic gas chamber and a preparation method thereof. The preparation method of the atomic gas chamber comprises the following steps: providing an atomic gas chamber glass bulb; rubidium steam is filled in the atomic gas chamber glass bulb; the atomic gas chamber glass bulb is filled with mixed gas; wherein the mixed gas comprises xenon 129, xenon 131, hydrogen and a buffer gas; the voltage division ratio of the xenon 129 to the xenon 131 is (1: 4)-(1: 9); carrying out heat preservation treatment on the atomic gas chamber glass bulb, and reacting rubidium steam with hydrogen to generate a rubidium hydride film layer; and the rubidium hydride film layer covers the inner wall of the atomic gas chamber glass bulb. According to the preparation method of the atomic gas chamber, provided by the invention, the atomic spin relaxation time of xenon 129 and xenon 131 can be prolonged, the relaxation performance of two isotopes can be balanced, the performance of the atomic gas chamber is further improved, and the requirements of application scenes such as a quantum inertia instrument on the atomic spin stability of the atomic gas chamber are met.

Description

Technical Field

[0001] This invention relates to the field of atomic gas chamber technology, and in particular to an atomic gas chamber and its preparation method. Background Technology

[0002] The atomic gas cell is the core component of a quantum inertial instrument, and its performance directly determines the instrument's accuracy and stability. Within the atomic gas cell, the spin relaxation time of the inert gas atoms (such as xenon-129 and xenon-131) is a crucial parameter.

[0003] In related technologies, to mitigate relaxation caused by collisions between atoms and the inner wall of the gas chamber, anti-relaxation films such as rubidium hydride (RbH) are typically deposited on the inner wall. However, these technologies have not deeply optimized key factors affecting relaxation time, such as the gas ratio within the gas chamber, thus limiting the improvement of atomic gas chamber performance. Therefore, how to improve key factors affecting relaxation time, such as the gas ratio, and further extend the relaxation time has become an urgent technical problem to be solved. Summary of the Invention

[0004] Therefore, it is necessary to provide an atomic gas chamber and its preparation method to further extend the relaxation time by addressing key factors affecting the relaxation time, such as the gas ratio.

[0005] A method for preparing an atomic gas chamber includes: providing an atomic gas chamber glass shell; filling the atomic gas chamber glass shell with rubidium vapor; filling the atomic gas chamber glass shell with a mixed gas; wherein the mixed gas includes xenon-129, xenon-131, hydrogen, and a buffer gas; the partial pressure ratio of xenon-129 and xenon-131 is 1:4 to 1:9; subjecting the atomic gas chamber glass shell to thermal insulation treatment; wherein the rubidium vapor reacts with the hydrogen to generate a rubidium hydride film layer; and the rubidium hydride film layer covers the inner wall of the atomic gas chamber glass shell.

[0006] In one embodiment, when the mixed gas is filled into the glass shell of the atomic gas chamber, the gas filling rate of the mixed gas is less than or equal to 5 Torr / min; and / or, the total pressure of the mixed gas is 200 Torr-500 Torr; and the partial pressure ratio of hydrogen in the mixed gas is 5%-10%. This avoids the gas flow from impacting the inner wall of the atomic gas chamber glass shell and affecting subsequent coating processes when the filling rate is too fast.

[0007] In one embodiment, the partial pressure ratio of xenon-129 and xenon-131 is 1:5; and / or, the total pressure of the mixed gas is 300 Torr; the partial pressure of hydrogen in the mixed gas is 15 Torr. This can further extend the relaxation time and improve the overall performance of the atomic gas chamber.

[0008] In one embodiment, filling the atomic gas chamber glass shell with rubidium vapor includes: heating a rubidium source at a first preset temperature, wherein the rubidium source diffuses into the atomic gas chamber glass shell in the form of vapor; the first preset temperature is 200℃-220℃; this allows for diffusion control of the rubidium vapor while ensuring the overall performance of the atomic gas chamber. And / or, the atomic gas chamber glass shell is subjected to the heat preservation treatment, including: performing the heat preservation treatment on the atomic gas chamber glass shell at a second preset temperature for a preset time; the second preset temperature is 80℃-100℃; the preset time is 120h-180h. The first preset temperature of 200℃-220℃ allows for diffusion control of the rubidium vapor while ensuring the overall performance of the atomic gas chamber. The second preset temperature of 80℃-100℃ and the preset time of 120h-180h result in a rubidium hydrogenation film layer of moderate thickness and high uniformity.

[0009] In one embodiment, the first preset temperature is 210°C; and / or, the second preset temperature is 100°C; and the preset time is 150h.

[0010] In one embodiment, the dimensional deviation of the atomic gas chamber glass shell is less than or equal to ±0.01 mm; the wall thickness deviation of the same cross-section of the atomic gas chamber glass shell is less than or equal to 0.005 mm; and the perpendicularity of the axis of the atomic gas chamber glass shell is less than or equal to 0.005 mm. Optimizing the geometric symmetry of the atomic gas chamber glass shell can improve the problem of poor uniformity of the subsequently deposited rubidium hydride film layer caused by geometric deviations of the atomic gas chamber glass shell, mitigate the collision relaxation loss between atoms and the inner wall of the glass shell, and adapt to the atomic collision characteristics.

[0011] In one embodiment, after providing the atomic gas chamber glass shell, the preparation method of the atomic gas chamber further includes: placing the atomic gas chamber glass shell in an alkaline solution for a first ultrasonic cleaning; wherein the alkaline solution is a sodium hydroxide solution, the sodium hydroxide solution has a sodium hydroxide mass fraction of 4%-8%, the temperature of the first ultrasonic cleaning is 60℃-70℃, and the ultrasonic cleaning time is 20min-30min; and placing the atomic gas chamber glass shell in an acid solution for a second ultrasonic cleaning; wherein the acid solution is a nitric acid solution, the nitric acid solution has a nitric acid mass fraction of 6%-10%, the temperature of the second ultrasonic cleaning is 45℃-55℃, and the ultrasonic cleaning time is 15min-20min. By selecting the above cleaning process parameter range and optimizing the cleaning process of the atomic gas chamber glass shell before filling, the best impurity removal effect can be achieved.

[0012] Based on this, the present application also provides an atomic gas chamber, which is prepared by the atomic gas chamber preparation method described in any of the above embodiments.

[0013] Based on this, this application embodiment also provides an atomic gas chamber, the atomic gas chamber comprising: an atomic gas chamber glass shell; rubidium vapor and a mixed gas filling the atomic gas chamber glass shell; wherein the mixed gas comprises xenon-129, xenon-131, hydrogen and a buffer gas; the partial pressure ratio of xenon-129 and xenon-131 is 1:4-1:9; and a rubidium hydride film layer covering the inner wall of the atomic gas chamber glass shell.

[0014] In one embodiment, the partial pressure ratio of Xenon-129 and Xenon-131 is 1:5; and / or, the dimensional deviation of the atomic gas chamber glass shell is less than or equal to ±0.01 mm; the wall thickness deviation of the same cross section of the atomic gas chamber glass shell is less than or equal to 0.005 mm; and the perpendicularity of the axis of the atomic gas chamber glass shell is less than or equal to 0.005 mm.

[0015] The method for preparing the atomic gas chamber provided in this application, on the one hand, involves introducing two isotopes, xenon-129 and xenon-131, into a mixed gas to synergistically suppress atomic spin relaxation by leveraging their spin characteristics; simultaneously limiting the partial pressure ratio of xenon-129 and xenon-131 to 1:4-1:9 balances the performance advantages of the two isotopes, prolonging the atomic spin relaxation time of the two isotopes while suppressing the coherence decay between the isotopes, thus taking into account the relaxation performance of both and fully utilizing the relaxation optimization effect of the mixed isotopes; on the other hand, forming a rubidium hydride film layer on the inner wall of the atomic gas chamber glass shell as an anti-relaxation film layer can also increase the macroscopic atomic spin relaxation time. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic flowchart illustrating the method for preparing an atomic gas chamber according to an embodiment of this application. Detailed Implementation

[0018] To facilitate understanding of the present invention, it will be described in more detail below. However, it should be understood that the present invention can be implemented in many different forms and is not limited to the embodiments or examples described herein. Rather, these embodiments or examples are provided to make the disclosure of the present invention more thorough and complete.

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments or examples only and is not intended to limit the invention. The optional scope of the term "and / or" as used herein includes any one of two or more of the related listed items, as well as any and all combinations of the related listed items, including any two related listed items, any more related listed items, or a combination of all related listed items.

[0020] In this invention, numerical ranges are involved. Unless otherwise specified, the numerical ranges are considered continuous and include the minimum and maximum values ​​of the range, as well as every value between the minimum and maximum values. Furthermore, when the range refers to integers, it includes every integer between the minimum and maximum values ​​of the range. Additionally, when multiple ranges are provided to describe features or characteristics, the ranges may be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges to which they are included.

[0021] In the related technologies, the preparation process of high-performance atomic gas chambers (such as gyroscope gas chambers) not only suffers from the problem that the gas filling ratio in the gas chamber has not been optimized in depth and the gas filling ratio is too simple, but also suffers from the problem that the quality control of the film layer is poor, and the key preparation parameters such as the cleaning process before filling and the geometric symmetry of the glass shell lack quantitative standards.

[0022] Specifically as follows:

[0023] The filling ratio is too simple: related technologies lack specificity for Xenon-129 ( 129 Xe) and xenon-131 ( 131 The simultaneous optimization of the inert gas and buffer gas ratio scheme for two isotopes (Xe) makes it difficult to balance the relaxation properties of both and fully utilize the relaxation optimization effect of mixed isotopes.

[0024] Poor controllability of film quality: The quantitative correlation between the thickness and uniformity of rubidium hydride film and existing preparation process parameters (such as temperature and time) is not yet clear. The thickness and uniformity of rubidium hydride film cannot be precisely controlled during the preparation process, which affects the consistency of atomic gas cell performance.

[0025] Key preparation parameters lack quantitative standards: Related technologies do not clearly define the cleaning standards for the pre-filling cleaning process of the atomic gas chamber glass shell (e.g., control of residual impurities), nor do they standardize the geometric symmetry indicators of the glass shell (e.g., inner diameter tolerance, wall thickness uniformity, etc.). Residual oil and metal impurities on the surface of the atomic gas chamber glass shell will reduce the adhesion stability of the rubidium hydride film layer, and the geometric deviation of the atomic gas chamber glass shell will also exacerbate the collision relaxation loss between atoms and the inner wall of the glass shell, ultimately leading to a large dispersion in gas chamber performance.

[0026] Based on this, this application provides a method for preparing an atomic gas chamber. Figure 1 A schematic flowchart of the method for preparing an atomic gas chamber provided in this application embodiment; as shown in the figure, the method includes:

[0027] Step S101: Provide the glass shell for the atomic gas chamber;

[0028] Step S102: Fill the glass shell of the atomic gas chamber with rubidium vapor;

[0029] Step S103: Fill the glass shell of the atomic gas chamber with a mixed gas; wherein the mixed gas includes xenon-129, xenon-131, hydrogen and a buffer gas; the partial pressure ratio of xenon-129 and xenon-131 is 1:4-1:9;

[0030] Step S104: The glass shell of the atomic gas chamber is insulated, and rubidium vapor reacts with hydrogen to generate a rubidium hydride film layer; the rubidium hydride film layer covers the inner wall of the glass shell of the atomic gas chamber.

[0031] Understandably, the method for preparing the atomic gas chamber provided in this application, on the one hand, involves introducing two isotopes, xenon-129 and xenon-131, into a mixed gas to synergistically suppress atomic spin relaxation by leveraging their spin characteristics; simultaneously, limiting the partial pressure ratio of xenon-129 and xenon-131 to 1:4-1:9 balances the performance advantages of the two isotopes, prolonging the atomic spin relaxation time of the two isotopes while suppressing the coherence decay between the isotopes, thus taking into account the relaxation performance of both and fully utilizing the relaxation optimization effect of the mixed isotopes; on the other hand, forming a rubidium hydride film layer on the inner wall of the atomic gas chamber glass shell as an anti-relaxation film layer can also increase the macroscopic atomic spin relaxation time.

[0032] In summary, the embodiments of this application can extend the atomic spin relaxation time of Xenon-129 and Xenon-131, balance the relaxation performance of the two isotopes, and thus improve the performance of the atomic gas cell, meeting the requirements of quantum inertial instruments and other application scenarios for atomic spin stability of the atomic gas cell.

[0033] It should also be understood that although the steps in the above flowchart are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Moreover, at least some of the steps in the above flowchart may include multiple steps or stages, and these steps or stages are not necessarily completed at the same time, nor are they necessarily performed sequentially.

[0034] The preparation method of the atomic gas chamber provided in the embodiments of this application and its beneficial effects will be described in further detail below.

[0035] First, step S101 is performed to provide the glass shell of the atomic gas chamber.

[0036] In some embodiments, the structure of the atomic gas chamber glass shell can be square; the material of the atomic gas chamber glass shell can be a material with a moderate or low coefficient of thermal expansion, alkali corrosion resistance and excellent optical properties; for example, the material of the atomic gas chamber glass shell can be high borosilicate glass, quartz glass, etc.; in the embodiments of this application, the glass substrate can be Schott Borofloat 33 (Schott float borosilicate glass); the size of the atomic gas chamber glass shell can be 4mm×4mm×4mm.

[0037] In some embodiments, the dimensional deviation of the atomic gas chamber glass shell is less than or equal to ±0.01 mm; the wall thickness deviation of the same cross section of the atomic gas chamber glass shell is less than or equal to 0.005 mm; and the perpendicularity of the atomic gas chamber glass shell axis is less than or equal to 0.005 mm. Here, the wall thickness deviation of the same cross section refers to the uniformity of the wall thickness of the atomic gas chamber glass shell; the perpendicularity of the axis refers to the perpendicularity of the central axis of the atomic gas chamber glass shell to the end face.

[0038] It is understandable that by limiting the key dimensional tolerances such as the size of the atomic gas chamber glass shell, the wall thickness of the same cross section, and the perpendicularity of the axis, the geometric symmetry of the atomic gas chamber glass shell can be optimized. This can improve the problem of poor uniformity of the subsequently deposited rubidium hydride film layer caused by the geometric deviation of the atomic gas chamber glass shell, reduce the collision relaxation loss between atoms and the inner wall of the glass shell, and adapt to the atomic collision characteristics.

[0039] In some embodiments, a coordinate measuring machine can be used to perform full-size inspection of the atomic gas chamber glass shell, and non-conforming products (those exceeding tolerance limits) can be directly rejected to ensure the geometric consistency of the atomic gas chamber glass shell, laying the foundation for the product performance stability of subsequent batch production.

[0040] In some embodiments, after providing the glass shell of the atomic gas chamber, the method for preparing the atomic gas chamber further includes:

[0041] The glass shell of the atomic gas chamber is placed in an alkaline solution for the first ultrasonic cleaning; wherein, the alkaline solution can be a sodium hydroxide solution, the mass fraction of sodium hydroxide in the sodium hydroxide solution can be 4%-8%, the temperature of the first ultrasonic cleaning can be 60℃-70℃, and the ultrasonic cleaning time of the first ultrasonic cleaning can be 20min-30min.

[0042] The glass shell of the atomic gas chamber is placed in an acid solution for a second ultrasonic cleaning; wherein the acid solution can be a nitric acid solution, the mass fraction of nitric acid in the nitric acid solution can be 6%-10%, the temperature of the second ultrasonic cleaning can be 45℃-55℃, and the ultrasonic cleaning time of the second ultrasonic cleaning can be 15min-20min.

[0043] In some specific embodiments, the mass fraction of sodium hydroxide in the sodium hydroxide solution can be 4%, 5%, 6%, 7%, or 8%, etc.; the temperature of the first ultrasonic cleaning can be 60℃, 62℃, 65℃, 68℃, or 70℃, etc.; the ultrasonic cleaning time of the first ultrasonic cleaning can be 20min, 22min, 25min, 28min, or 30min, etc.; the mass fraction of nitric acid in the nitric acid solution can be 6%, 7%, 8%, 9%, or 10%, etc.; the temperature of the second ultrasonic cleaning can be 45℃, 48℃, 50℃, 52℃, or 55℃, etc.; the ultrasonic cleaning time of the second ultrasonic cleaning can be 15min, 16min, 18min, 19min, or 20min, etc.

[0044] In this embodiment, the mass fraction of sodium hydroxide in the sodium hydroxide solution can be 6%; the temperature of the first ultrasonic cleaning can be 65°C; the ultrasonic cleaning time of the first ultrasonic cleaning can be 25 min; the mass fraction of nitric acid in the nitric acid solution can be 8%; the temperature of the second ultrasonic cleaning can be 50°C; and the ultrasonic cleaning time of the second ultrasonic cleaning can be 18 min.

[0045] Understandably, during ultrasonic cleaning, if the mass fraction of the cleaning solution (alkaline and acidic solutions) is too low, the ultrasonic time is too short, and the ultrasonic temperature is too low, organic matter and impurities may not be completely removed, becoming "defect points" in the subsequent deposition of the rubidium hydride film. If the mass fraction of the cleaning solution is too high, the ultrasonic time is too long, and the ultrasonic temperature is too high, it may lead to excessive etching of the surface of the atomic gas chamber glass shell, damaging the structure of the atomic gas chamber glass shell. Therefore, selecting the above-mentioned cleaning process parameter range and optimizing the cleaning process of the atomic gas chamber glass shell before filling can achieve the best impurity removal effect.

[0046] In some embodiments, residual impurities can be detected by ICP-MS (inductively coupled plasma mass spectrometry) to ensure the cleanliness of the atomic gas chamber glass shell, laying the foundation for the stability of product performance in subsequent batch production.

[0047] In some embodiments, after the atomic gas chamber glass shell is placed in an alkaline solution and an acid solution for ultrasonic cleaning (deep cleaning process), the preparation method of the atomic gas chamber further includes: rinsing the atomic gas chamber glass shell with deionized water to remove residual alkaline and acid solutions from the atomic gas chamber glass shell; dehydrating the atomic gas chamber glass shell with isopropanol; and vacuum drying the atomic gas chamber glass shell.

[0048] In this embodiment, a deep cleaning process is added before coating inside the glass shell of the atomic gas chamber, which enhances the uniformity of the subsequently formed rubidium hydride film. The resulting atomic gas chamber, after testing, showed a 30% improvement in film uniformity, thus solving the problem of poor uniformity in rubidium hydride films in related technologies.

[0049] Next, step S102 is performed to fill the glass shell of the atomic gas chamber with rubidium vapor.

[0050] In some embodiments, filling the glass shell of the atomic gas chamber with rubidium vapor may specifically include: heating a rubidium source at a first preset temperature, wherein the rubidium source diffuses into the glass shell of the atomic gas chamber in the form of vapor; the first preset temperature is 200°C-220°C.

[0051] In some specific embodiments, the glass shell of the atomic gas chamber can be connected to the main pipe via a first pipe, and the alkali metal container holding the rubidium source can be connected to the main pipe via a second pipe. Filling the glass shell of the atomic gas chamber with rubidium vapor can specifically include: heating the alkali metal container to a preset temperature, and uniformly diffusing the rubidium vapor into the glass shell of the atomic gas chamber via the path of the second pipe-main pipe-first pipe.

[0052] It should be noted that a certain amount of rubidium vapor is introduced into the glass shell of the atomic gas chamber. A portion of the rubidium vapor introduced into the glass shell of the atomic gas chamber can react with hydrogen in subsequent processes to generate a rubidium hydrogenation film layer, while the remaining rubidium vapor can be used as the working medium of the atomic gas chamber.

[0053] In some embodiments, the first preset temperature can be 200°C, 205°C, 210°C, 215°C, or 220°C, etc.; in this embodiment, the first preset temperature is 210°C.

[0054] Understandably, during the process of filling the glass shell of the atomic gas cell with rubidium vapor, if the first preset temperature is too low, the diffusion rate of rubidium vapor may be slow, preventing it from quickly filling the glass shell and affecting the fabrication efficiency of the atomic gas cell. If the first preset temperature is too high, the vapor pressure may be too high, potentially leading to increased spin-exchange collisions and reducing the performance of the atomic gas cell device. Therefore, selecting a first preset temperature of 200℃-220℃ allows for controlled diffusion of rubidium vapor while ensuring the overall performance of the atomic gas cell.

[0055] In some embodiments, before filling the glass shell of the atomic gas chamber with rubidium vapor, the method for preparing the atomic gas chamber further includes: connecting the main pipe to a vacuum system and using a vacuum pump to evacuate the entire pipeline to a pressure of 5 × 10⁻⁶. -5 Pa.

[0056] Next, step S103 is performed to fill the glass shell of the atomic gas chamber with a mixed gas; wherein the mixed gas includes xenon-129, xenon-131, hydrogen and a buffer gas; the partial pressure ratio of xenon-129 and xenon-131 is 1:4-1:9.

[0057] In some embodiments, the partial pressure ratio of xenon-129 and xenon-131 can be 1:4, 1:5, 1:6, 1:7, 1:8, or 1:9, etc. In the embodiments of this application, the partial pressure ratio of xenon-129 and xenon-131 is 1:5.

[0058] Understandably, when the partial pressure ratio of Xenon-129 to Xenon-131 is greater than 1:4, the proportion of Xenon-131 is too low, which can easily lead to increased coherence decay between isotopes. When the partial pressure ratio of Xenon-129 to Xenon-131 is less than 1:9, the proportion of Xenon-131 is too high, and the inherently fast relaxation of Xenon-131 will lower the overall relaxation performance. Therefore, considering the isotopic characteristics of Xenon-129 and Xenon-131, optimizing the gas ratio in the atomic gas chamber and selecting a partial pressure ratio of Xenon-129 to Xenon-131 of 1:4-1:9 can balance the relaxation performance of both and fully utilize the relaxation optimization effect of the mixed isotopes.

[0059] In the actual preparation process, a partial pressure ratio of 1:5 for xenon-129 and xenon-131 is selected to optimize the relaxation effect of the mixed isotopes, at which point the relaxation properties of xenon-129 and xenon-131 reach the best balance.

[0060] In some embodiments, when filling the glass shell of the atomic gas chamber with a mixed gas, the inflation rate of the mixed gas is less than or equal to 5 Torr / min. For example, the inflation rate can be 2 Torr / min, 3 Torr / min, 4 Torr / min, or 5 Torr / min. Specifically, a high-precision mass flow controller can be used to control the inflation rate to ≤5 Torr / min. This avoids the gas flow of the mixed gas from impacting the inner wall of the glass shell of the atomic gas chamber when the inflation rate is too fast, thus preventing it from affecting subsequent coating processes.

[0061] In some embodiments, the buffer gas in the mixed gas may include nitrogen.

[0062] In some embodiments, the total pressure of the mixed gas is 200 Torr-500 Torr; the partial pressure of hydrogen in the mixed gas is 5%-10%.

[0063] In some embodiments, the total pressure of the mixed gas can be 200 Torr, 300 Torr, 400 Torr, or 500 Torr, etc.; the partial pressure percentage of hydrogen in the mixed gas can be 5%, 6%, 7%, 8%, 9%, or 10%, etc. In the embodiments of this application, the total pressure of the mixed gas is 300 Torr; the partial pressure of hydrogen in the mixed gas is 15 Torr (the partial pressure percentage of hydrogen is 5%).

[0064] Understandably, if the total pressure of the mixed gas is too high, it may increase the atomic collision frequency within the glass shell of the atomic chamber, exacerbating relaxation losses. Conversely, if the total pressure of the mixed gas is too low, it may fail to provide a stable environment for atomic motion. Therefore, selecting a total pressure of 200 Torr-500 Torr for the mixed gas can further extend the relaxation time and improve the overall performance of the atomic chamber.

[0065] It is also understandable that if the partial pressure of hydrogen in the gas mixture is too high, the excess hydrogen may lead to an excessively thick rubidium hydride film layer, increasing the collision resistance between atoms and the wall, thus affecting the relaxation time. Conversely, if the partial pressure of hydrogen in the gas mixture is too low, the thickness of the subsequently formed rubidium hydride film layer may be insufficient, failing to exert its anti-relaxation effect. Therefore, selecting a hydrogen partial pressure ratio of 5%-10% is beneficial for further extending the relaxation time and improving the overall performance of the atomic gas chamber.

[0066] In some embodiments, after the mixed gas filling the glass shell of the atomic gas chamber meets the standard, the pipeline can be sealed and the gas chamber can be sealed by glass fusion sealing; specifically, the two ends of the atomic gas chamber can be sealed by glass fusion sealing process according to the gyroscope gas chamber packaging standard to ensure airtightness (leakage rate ≤1×10). -9 Pa·m 3 / s).

[0067] Finally, step S104 is performed to heat-insulate the glass shell of the atomic gas chamber, and rubidium vapor reacts with hydrogen to generate a rubidium hydride film layer; the rubidium hydride film layer covers the inner wall of the glass shell of the atomic gas chamber.

[0068] Understandably, the inner wall of the glass shell of the atomic gas chamber is covered with a rubidium hydride film, which can prevent atoms from losing their polarization state after multiple collisions with the inner wall, thus prolonging the relaxation time of atomic spin polarization.

[0069] In some embodiments, the atomic gas chamber glass shell is subjected to heat preservation treatment, which includes: heat preservation treatment of the atomic gas chamber glass shell at a second preset temperature for a preset time; the second preset temperature is 80℃-100℃; and the preset time is 120h-180h.

[0070] In some embodiments, the second preset temperature can be 80°C, 85°C, 90°C, 95°C, or 100°C, etc.; the preset time can be 120h, 130h, 140h, 150h, 160h, 170h, or 180h, etc. In this embodiment, the second preset temperature can be 100°C; the preset time can be 150h.

[0071] Understandably, if the second preset temperature is too low and the preset time is too short, the reaction rate between rubidium vapor and hydrogen will be too slow and incomplete, failing to form a rubidium hydride film of the required thickness within the preset time. If the second preset temperature is too high and the preset time is too long, the reaction rate will accelerate drastically, causing rubidium hydride molecules to rapidly accumulate and form a rough film, posing a risk of cracks and detachment. Furthermore, an excessively long preset time will lead to continuous film deposition, resulting in an excessively thick rubidium hydride film and increased resistance to atomic collisions. Therefore, selecting a second preset temperature of 80℃-100℃ and a preset time of 120h-180h provides a suitable reaction rate, allowing sufficient time for the diffusion and alignment of rubidium hydride molecules, ensuring a dense and pore-free film. This, in turn, promotes uniform deposition of rubidium hydride, resulting in a rubidium hydride film of moderate thickness and high uniformity.

[0072] In some embodiments, after forming the rubidium hydride film, the method for preparing the atomic gas cell may further include: performing a closed-loop detection of film uniformity; specifically, using an infrared spectrometer to detect the spectral transmittance of the same region of the atomic gas cell, establishing a "transmittance-uniformity" mapping relationship, and ensuring that the film uniformity deviation is ≤8%.

[0073] It is understood that the embodiments of this application optimize the geometric symmetry of the glass shell of the atomic gas cell and combine it with the closed loop of film uniformity detection to make the batch-to-batch performance deviation of the prepared atomic gas cells ≤10%, reduce the dispersion of large-scale production, and achieve controllable batch consistency of atomic gas cells.

[0074] In one specific embodiment, the method for preparing the atomic gas chamber of this application may include the following steps:

[0075] Step S1, glass shell cleaning: Take a borosilicate square glass shell (external dimensions of 5mm×5mm×5mm, wall thickness of 0.5mm), and perform the following steps sequentially: alkaline washing (6% NaOH, 65℃, ultrasonication for 25min) → acid washing (8% dilute nitric acid, 50℃, ultrasonication for 18min) → rinsing with deionized water (3 times, 15min each time) → dehydration with isopropanol → vacuum drying (125℃, 2.5h); ICP-MS analysis showed that the residual impurities were 3ppm.

[0076] Step S2, Glass shell screening: The dimensions of the glass shell are measured using a coordinate measuring machine; the length, width and height of the glass shell are 5.005mm, the wall thickness deviation is 0.004mm, and the axis perpendicularity is 0.003mm, which meets the standard.

[0077] Step S3, Device Connection: Connect 6 qualified glass shells to the main pipe through the first pipe with a diameter of 6mm, and connect the alkali metal container containing rubidium metal to the main pipe through the second pipe with a diameter of 8mm. Connect the main pipe to the vacuum system.

[0078] Step S4, Vacuuming: Start the vacuum pump and evacuate the entire pipeline to a pressure of 5×10⁻⁶. -5 Pa;

[0079] Step S5, rubidium vapor filling: Heat the alkali metal container to 200°C, and the rubidium vapor diffuses into each glass shell;

[0080] Step S6, Gas Filling and Coating: Fill with a mixed gas, which includes xenon-129, xenon-131, hydrogen, and an inert gas; the total pressure of the mixed gas is 300 Torr, the partial pressure of hydrogen is 15 Torr, and the partial pressure ratio of xenon-129 to xenon-131 is 1:5; after the gas meets the standard, seal the pipeline; seal the gas chamber with glass; then place the gas chamber in an environment of 100°C for 150 hours.

[0081] Step S7, performance testing: the uniformity deviation of rubidium hydride film thickness is 7%; the relaxation time of xenon-129 is 12.56s; the relaxation time of xenon-131 is 10.7s; in the prior art, the relaxation time of xenon-129 is 6.36s and the relaxation time of xenon-131 is 6.4s; it can be seen that the atomic spin relaxation time of xenon-129 and xenon-131 in this embodiment of the application is improved by more than 1.5 times compared with the related technologies, achieving an order-of-magnitude improvement in relaxation time, which meets the accuracy requirements of quantum instruments such as gyroscopes.

[0082] In summary, this application provides a comprehensive optimized preparation method for atomic gas chambers. By synergistically optimizing multiple key parameters such as the gas filling ratio, glass shell geometric symmetry, rubidium hydride film quality, and pre-filling cleaning process, the macroscopic spin relaxation time of xenon-129 and xenon-131 atoms within the atomic gas chamber is significantly improved, while ensuring high consistency and stability of the atomic gas chamber's performance. The comprehensive optimized preparation method for atomic gas chambers provided in this application comprehensively enhances the overall performance of atomic gas chambers.

[0083] The atomic gas cell prepared by the method provided in this application is suitable for high-precision quantum instruments such as nuclear magnetic resonance gyroscopes and spin-free exchange relaxation (SERF) gyroscopes.

[0084] Based on this, the present application also provides an atomic gas chamber, which is prepared using the atomic gas chamber preparation method in any of the above embodiments.

[0085] Based on this, this application embodiment also provides an atomic gas chamber, which includes:

[0086] Atomic gas chamber glass shell;

[0087] Rubidium vapor and a mixed gas are filled inside the glass shell of the atomic gas chamber; wherein the mixed gas includes xenon-129, xenon-131, hydrogen and a buffer gas; the partial pressure ratio of xenon-129 and xenon-131 is 1:4 to 1:9;

[0088] A rubidium hydride film layer covers the inner wall of the glass shell of the atomic gas chamber.

[0089] Understandably, the atomic gas chamber provided in this application can extend the atomic spin relaxation time of Xenon-129 and Xenon-131, balance the relaxation performance of the two isotopes, and thus improve the performance of the atomic gas chamber, meeting the requirements of atomic spin stability for applications such as quantum inertial instruments.

[0090] In some embodiments, the partial pressure ratio of Xenon-129 and Xenon-131 can be 1:5.

[0091] In some embodiments, the dimensional deviation of the atomic gas chamber glass shell is less than or equal to ±0.01 mm; the wall thickness deviation of the same cross section of the atomic gas chamber glass shell is less than or equal to 0.005 mm; and the perpendicularity of the axis of the atomic gas chamber glass shell is less than or equal to 0.005 mm.

[0092] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0093] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A method for preparing an atomic gas chamber, characterized in that, The method for preparing the atomic gas chamber includes: Provide the glass shell for the atomic gas chamber; The glass shell of the atomic gas chamber is filled with rubidium vapor; The glass shell of the atomic gas chamber is filled with a mixed gas; wherein the mixed gas includes xenon-129, xenon-131, hydrogen and a buffer gas; the partial pressure ratio of xenon-129 and xenon-131 is 1:4 to 1:9; The glass shell of the atomic gas chamber is insulated, and the rubidium vapor reacts with the hydrogen to generate a rubidium hydride film layer; the rubidium hydride film layer covers the inner wall of the glass shell of the atomic gas chamber.

2. The method for preparing the atomic gas chamber according to claim 1, characterized in that, When the mixed gas is filled into the glass shell of the atomic gas chamber, the filling rate of the mixed gas is less than or equal to 5 Torr / min; And / or, the total pressure of the mixed gas is 200 Torr-500 Torr; the partial pressure ratio of hydrogen in the mixed gas is 5%-10%.

3. The method for preparing the atomic gas chamber according to claim 1, characterized in that, The partial pressure ratio of Xenon-129 and Xenon-131 is 1:5; And / or, the total pressure of the mixed gas is 300 Torr; the partial pressure of the hydrogen in the mixed gas is 15 Torr.

4. The method for preparing the atomic gas chamber according to claim 1, characterized in that, Filling the glass shell of the atomic gas chamber with rubidium vapor includes: heating a rubidium source at a first preset temperature, wherein the rubidium source diffuses into the glass shell of the atomic gas chamber in the form of vapor; the first preset temperature is 200℃-220℃; And / or, the heat preservation treatment of the atomic gas chamber glass shell includes: performing the heat preservation treatment of the atomic gas chamber glass shell for a preset time at a second preset temperature; the second preset temperature is 80℃-100℃; the preset time is 120h-180h.

5. The method for preparing the atomic gas chamber according to claim 4, characterized in that, The first preset temperature is 210℃; and / or, the second preset temperature is 100℃; the preset time is 150h.

6. The method for preparing the atomic gas chamber according to claim 1, characterized in that, The dimensional deviation of the atomic gas chamber glass shell is less than or equal to ±0.01 mm; the wall thickness deviation of the same cross section of the atomic gas chamber glass shell is less than or equal to 0.005 mm; and the perpendicularity of the axis of the atomic gas chamber glass shell is less than or equal to 0.005 mm.

7. The method for preparing the atomic gas chamber according to claim 1, characterized in that, After providing the glass shell for the atomic gas chamber, the method for preparing the atomic gas chamber further includes: The glass shell of the atomic gas chamber is placed in an alkaline solution for a first ultrasonic cleaning; wherein the alkaline solution is a sodium hydroxide solution, the mass fraction of sodium hydroxide in the sodium hydroxide solution is 4%-8%, the temperature of the first ultrasonic cleaning is 60℃-70℃, and the ultrasonic cleaning time of the first ultrasonic cleaning is 20min-30min. The glass shell of the atomic gas chamber is placed in an acid solution for a second ultrasonic cleaning; wherein the acid solution is a nitric acid solution, the mass fraction of nitric acid in the nitric acid solution is 6%-10%, the temperature of the second ultrasonic cleaning is 45℃-55℃, and the ultrasonic cleaning time of the second ultrasonic cleaning is 15min-20min.

8. An atomic gas chamber, characterized in that, The atomic gas chamber is prepared using the atomic gas chamber preparation method according to any one of claims 1 to 7.

9. An atomic gas chamber, characterized in that, The atomic gas chamber includes: Atomic gas chamber glass shell; Rubidium vapor and a mixed gas are filled inside the glass shell of the atomic gas chamber; wherein the mixed gas includes xenon-129, xenon-131, hydrogen and a buffer gas; the partial pressure ratio of xenon-129 and xenon-131 is 1:4 to 1:9; A rubidium hydride film layer covers the inner wall of the glass shell of the atomic gas chamber.

10. The atomic gas chamber according to claim 9, characterized in that, The partial pressure ratio of Xenon-129 and Xenon-131 is 1:5; and / or, the dimensional deviation of the atomic gas chamber glass shell is less than or equal to ±0.01 mm; the wall thickness deviation of the same cross section of the atomic gas chamber glass shell is less than or equal to 0.005 mm; and the perpendicularity of the axis of the atomic gas chamber glass shell is less than or equal to 0.005 mm.

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