Method for preparing quantum dot, quantum dot, optical member, and electronic device

Abstract

Embodiments provide a method of preparing a quantum dot, a quantum dot, an optical member, and an electronic device. The method of preparing a quantum dot includes: preparing a core including copper (Cu), a Group III element, and a Group VI element; and preparing a first shell covering the core and including a Group II element and a Group VI element, where preparing the first shell includes: preparing a first composition for forming the first shell by mixing the core with a Group VI element-containing precursor; and preparing a second composition for preparing the first shell by adding a Group II element-containing precursor to the first composition for forming the first shell.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0160489, filed on November 12, 2024, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments relate to methods for preparing quantum dots, quantum dots, optical components including quantum dots, and electronic devices including quantum dots. Background Technology

[0004] Quantum dots can be used as materials to perform various optical functions (e.g., light conversion, light emission, etc.) in optical components and various electronic devices. Quantum dots are nanoscale semiconductor nanocrystals that exhibit quantum confinement effects, and by controlling the size, composition, etc. of the nanocrystals, quantum dots can have different band gaps, and therefore can emit light with various emission wavelengths.

[0005] Optical components incorporating such quantum dots can be in the form of thin films (e.g., thin films patterned for each sub-pixel). Such optical components can also be used as color conversion components in devices that include various light sources.

[0006] Quantum dots can be used for a variety of purposes in various electronic devices. For example, quantum dots can also be used as emitters. As an example, quantum dots can be included in the emitter layer of a light-emitting element that includes a pair of electrodes and an emitter layer, and can be used as an emitter.

[0007] Currently, in order to achieve high-quality optical components and electronic devices, it is necessary to develop quantum dots with excellent quantum yield (QY) and free from cadmium (a toxic element).

[0008] It will be understood that this background section is intended in part to provide useful background for understanding the art. However, this background section may also include ideas, concepts, or knowledge that were known or understood by a person skilled in the art prior to the corresponding valid submission date of the subject matter disclosed herein. Summary of the Invention

[0009] Examples include methods for preparing quantum dots, quantum dots, optical components including quantum dots, and electronic devices including quantum dots.

[0010] Additional aspects will be set forth in part in the description which follows, and additional aspects will be apparent in part from the description, or may be taught by practicing embodiments of the present disclosure.

[0011] According to an embodiment, a method for preparing quantum dots may include:

[0012] Preparation of nuclei including copper (Cu), Group III elements, and Group VI elements; and

[0013] A first shell was prepared, containing a core of Group II and Group VI elements, wherein...

[0014] Preparing the first shell may include:

[0015] A first composition for forming a first shell is prepared by mixing the core with a precursor containing a group VI element; and

[0016] A second composition for forming the first shell is prepared by adding a precursor containing a group II element to a first composition for forming the first shell.

[0017] In an embodiment, in preparing a first composition for forming a first shell by mixing a core with a group VI element precursor, the core and the group VI element precursor may be mixed at a temperature less than or equal to about 100°C.

[0018] In an embodiment, the method may further include, after preparing a second composition for forming the first shell: heat-treating the second composition for forming the first shell.

[0019] In an embodiment, the group VI elements included in the core may include B. 1 The VI family elements included in the first shell may include B 2 Precursors containing group VI elements can be those containing B. 2 Precursor, containing B 2 Precursors may include B 2 and amine compounds, and B 1 and B 2 Each can be an independent element of the VI family.

[0020] In the embodiments, group III elements may be aluminum (Al), gallium (Ga), indium (In), or thallium (Tl). (Nh) or any combination thereof.

[0021] In the embodiments, group VI elements can be oxygen (O), sulfur (S), selenium (Se), tellurium (Te), or any combination thereof.

[0022] In the embodiments, the Group II elements may be magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), mercury (Hg), or any combination thereof.

[0023] In embodiments, the core may include copper (Cu), indium (In), gallium (Ga), and sulfur (S).

[0024] In an embodiment, the first shell may include a group II-VI semiconductor compound, a group III-VI semiconductor compound, a group III-V semiconductor compound, or any combination thereof.

[0025] In the embodiments, the II-VI semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, ZnMgO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

[0026] In the embodiments, the III-VI semiconductor compound may be GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, InGaSe3, or any combination thereof.

[0027] In the embodiments, the III-V semiconductor compound may be GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof.

[0028] In an embodiment, the first shell may include zinc (Zn) and sulfur (S).

[0029] In an embodiment, a quantum dot, prepared by the method, may comprise, based on a total of 100 weight percent (wt%) of quantum dots, an amount of copper (Cu) ranging from about 5 wt% to about 15 wt%; a group III element ranging from about 10 wt% to about 20 wt%; a group VI element ranging from about 40 wt% to about 50 wt%; and a group II element ranging from about 25 wt% to about 35 wt%.

[0030] In an embodiment, the quantum dot can emit light with a peak emission wavelength in the range of approximately 500 nm to approximately 650 nm.

[0031] In the embodiments, the quantum yield (QY) of the quantum dot can be in the range of approximately 70% to approximately 98%.

[0032] In an embodiment, the full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dot can be less than or equal to approximately 55 nm.

[0033] According to an embodiment, an optical component may include quantum dots.

[0034] According to an embodiment, an electronic device may include quantum dots.

[0035] In one embodiment, the electronic device may include a light source and a color conversion component disposed in the path of light emitted from the light source, wherein the color conversion component may include quantum dots.

[0036] It will be understood that the above embodiments are described in a general and illustrative sense only and are not for the purpose of limitation, and this disclosure is not limited to the embodiments described above. Attached Figure Description

[0037] The accompanying drawings are included to provide a further understanding of the embodiments, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present disclosure and their principles. The above and other aspects and features of the present disclosure will become more apparent from the detailed description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0038] Figure 1 This is a schematic cross-sectional view of a quantum dot according to an embodiment;

[0039] Figure 2 This is a schematic cross-sectional view of an electronic device according to an embodiment;

[0040] Figure 3 This is a schematic cross-sectional view of the light-emitting element according to an embodiment;

[0041] Figure 4This is a schematic perspective view of an electronic device including a light-emitting element according to an embodiment;

[0042] Figure 5 This is a schematic perspective view of the exterior of a vehicle serving as an electronic device according to an embodiment;

[0043] Figures 6A to 6C Each is a schematic diagram of the interior of a vehicle according to an embodiment;

[0044] Figure 7 These are graphs of the photoluminescence (PL) spectra of quantum dots based on the example and comparative examples; and

[0045] Figure 8 The graph shows the lightfastness of quantum dots based on examples and comparative examples. Detailed Implementation

[0046] This disclosure will now be described more fully below with reference to the accompanying drawings, in which embodiments are illustrated. However, this disclosure may be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0047] In the accompanying drawings, the size, thickness, scale, and dimensions of elements may be exaggerated for ease of description and clarity. The same reference numerals and reference characters always refer to the same elements.

[0048] In this specification, it will be understood that when an element (or region, layer, component, etc.) is referred to as being "on," "connected to," or "coupled to" another element, the element may be directly on, connected to, or coupled to the other element, or one or more intermediary elements may exist between the element and the other element. In a similar sense, when an element (or region, layer, component, etc.) is described as "covering" another element, the element may directly cover the other element, or one or more intermediary elements may exist between the element and the other element.

[0049] In the specification, when an element is "directly on" another element, "directly connected to" another element, or "directly coupled to" another element, there is no intermediary element. For example, "directly on" can mean that two layers or two elements are positioned between the two layers and the two elements without any additional elements such as adhesive elements.

[0050] In the specification, unless the context clearly indicates otherwise, expressions such as “a,” “one,” and “the” used in the singular are intended to include the plural forms as well.

[0051] In this specification, the term "and / or" includes any and all combinations of one or more of the related listed items. For example, "A and / or B" can be understood to mean "A, B, or A and B". The terms "and" and "or" can be used in the sense of conjunction or disjunction and can be understood as equivalent to "and / or".

[0052] In the specification and claims, for the purposes of their meaning and description, the term "at least one of..." is intended to include the meaning of "at least one of the group consisting of...". For example, "at least one of A, B, and C" can be understood to mean only A, only B, only C, or any combination of two or more of A, B, and C (such as ABC, AB, BC, or AC). When the term "at least one of..." precedes / follows the list of elements, it modifies the entire list of elements and does not modify any individual element in the list.

[0053] It will be understood that although the terms first, second, etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. Therefore, without departing from the teachings of this disclosure, a first element may be referred to as a second element. Similarly, without departing from the scope of this disclosure, a second element may be referred to as a first element.

[0054] For ease of description, the spatial relative terms “below,” “under,” “down,” “above,” or “above,” etc., may be used herein to describe the relationship between one element or component and another, as shown in the accompanying drawings. It will be understood that, in addition to the orientations depicted in the drawings, the spatial relative terms are intended to cover different orientations of the device in use or operation. For example, in the case where the device shown in the drawings is flipped, a device positioned “below” or “under” another device may be placed “above” another device. Therefore, the illustrative term “below” can include both a lower and an upper position. The device may also be oriented in other directions, and thus the spatial relative terms may be interpreted differently depending on the orientation.

[0055] Taking into account the measurements discussed and the errors associated with the measurement of the recorded quantities (e.g., limitations of the measurement system), as used herein, “about” or “approximately” includes the stated values ​​and means within an acceptable range of deviation from the recorded values ​​as determined by one of ordinary skill in the art. For example, “about” may mean within one or more standard deviations, or within ±20%, ±10%, or ±5% of the stated values.

[0056] It should be understood that the terms “comprises,” “includes,” “have,” and “contain” are intended to indicate the presence of the stated features, integers, steps, operations, elements, components, or combinations thereof in this disclosure, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

[0057] Unless otherwise defined or implied herein, all terms used (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that, unless expressly defined in the specification, terms (such as those defined in a general dictionary) should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and should not be interpreted in an ideal or overly formal sense.

[0058] As used herein, the term "Group I" can encompass elements in Group IA and Group IB of the International Union of Pure and Applied Chemistry (IUPAC) periodic table. Examples of Group I elements can include silver (Ag) and copper (Cu), among others.

[0059] As used herein, the term “Group II” can encompass elements in Group IIA and Group IIB of the IUPAC periodic table. Examples of Group II elements may include magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), and mercury (Hg).

[0060] As used herein, the term "Group III" can encompass elements in Group IIIA and Group IIIB of the IUPAC periodic table. Examples of Group III elements may include aluminum (Al), gallium (Ga), indium (In), thallium (Tl), and... (Nh) etc.

[0061] As used herein, the term "Group VI" can encompass elements in Group VIA and Group VIB of the IUPAC periodic table. Examples of Group VI elements can include oxygen (O), sulfur (S), selenium (Se), and tellurium (Te).

[0062] As used in this article, the terms “quantum yield” and “luminescence efficiency” can be used with essentially the same meaning.

[0063] The method for preparing quantum dots according to the embodiments will be described below.

[0064] Methods for preparing quantum dots

[0065] According to an embodiment, a method for preparing quantum dots may include: preparing a core comprising copper (Cu), a group III element, and a group VI element; and preparing a first shell covering the core and comprising group II and group VI elements. Preparing the first shell may include: preparing a first composition for forming the first shell by mixing the core with a group VI element-containing precursor; and preparing a second composition for forming the first shell by adding a group II element-containing precursor to the first composition for forming the first shell.

[0066] According to an embodiment, nucleus preparation may include using a nucleus-forming composition comprising a copper precursor, a group III element precursor, and a group VI element precursor.

[0067] According to an embodiment, nucleus preparation may include heat treatment of the composition used to form the nucleus.

[0068] According to an embodiment, in preparing a first composition for forming a first shell by mixing a core with a group VI element precursor, the core and the group VI element precursor may be mixed at a temperature less than or equal to about 100°C.

[0069] For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 30°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 35°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 40°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 45°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 50°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 55°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 60°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 65°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 70°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 75°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 80°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 85°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 90°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 95°C to about 100°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 30°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 35°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 40°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 45°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 50°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 55°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 60°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 65°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 70°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 75°C to about 80°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 30°C to about 60°C.For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 35°C to about 60°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 40°C to about 60°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 45°C to about 60°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 50°C to about 60°C. For example, the nucleus and the precursor containing a Group VI element can be mixed separately at a temperature of about 55°C to about 60°C.

[0070] "Mixing the nucleus and the group VI element precursor at a temperature of..." can be understood as forming the group VI element precursor at a temperature of... and then mixing the nucleus and the group VI element precursor at a temperature of... For example, according to an embodiment, in preparing a first composition for forming a first shell by mixing the nucleus with the group VI element precursor, the group VI element precursor can be formed at a temperature in the range of about 50°C to about 60°C, and the nucleus and the group VI element precursor can be mixed at a temperature in the range of about 70°C to about 80°C.

[0071] The preparation of the first shell may include preparing a first composition for forming the first shell by mixing the core with a group VI element-containing precursor, which can suppress and prevent the full width at half maximum (FWHM) of the emission spectrum from increasing as the content of the group VI element in the core decreases.

[0072] By mixing the nucleus and a precursor containing group VI elements at low temperatures, the reduction in the full width at half maximum (FWHM) of the emission spectrum caused by heat treatment of the nucleus at high temperatures can be minimized.

[0073] According to an embodiment, the group II element precursor included in the second composition used to form the first shell may include group II elements and amine compounds.

[0074] For example, a precursor containing a Group II element can be an amine compound containing a Group II element. For example, a precursor containing a Group II element can be Zn-oleylamine.

[0075] According to an embodiment, after preparing a second composition for forming a first shell, the method for preparing quantum dots may further include: heat-treating the second composition for forming the first shell.

[0076] For example, heat treatment can be performed at a temperature greater than or equal to approximately 200°C.

[0077] According to an embodiment, the group VI elements included in the core may include B 1 The VI family elements included in the first shell may include B 2 And B 1 and B 2Each can be an independent element of the VI family.

[0078] According to the embodiment, B 1 and B 2 They can be the same as each other or different from each other.

[0079] According to an embodiment, the precursor containing a group VI element in the core may be a B-containing precursor. 1 Precursor.

[0080] According to an embodiment, the group VI element precursor included in the first composition used to form the first shell may be a B-containing precursor. 2 Precursor.

[0081] In the embodiments, B is included. 1 Precursors and B-containing 2 Precursors can be the same as or different from each other.

[0082] According to the embodiments, containing B 2 Precursors may include B 2 And amine compounds.

[0083] In the embodiment, containing B 2 Precursors may include S-oleylamine.

[0084] Through including B 2 And amine compounds, due to B 2 The products formed during the reaction with amine compounds react with the metal and precursors of the nucleus, thus containing B. 2 Precursors can improve the reactivity of the synthesis.

[0085] In an embodiment, preparing the first shell of this disclosure may include making a shell containing B 2 The precursor reacts with the nucleus, thereby minimizing the increase in full width at half maximum (FWHM) through nuclear stabilization, thus providing quantum dots with excellent quantum yield and improved lightfastness.

[0086] According to an embodiment, after preparing the first shell, the method may further include using a composition for forming a second shell to form a second shell.

[0087] In the embodiments, the composition used to form the second shell may include a precursor containing a group II element and a precursor containing a group VI element.

[0088] According to embodiments, the group VI element precursor in the composition for forming the core and the group VI element precursor in the composition for forming the first shell may be the same as or different from each other.

[0089] According to an embodiment, the group II element precursor in the composition used to form the first shell and the group II element precursor in the composition used to form the second shell may be the same as or different from each other.

[0090] According to an embodiment, the group VI element precursor in the composition used to form the first shell and the group VI element precursor in the composition used to form the second shell may be the same as or different from each other.

[0091] According to the embodiments, the copper precursor may be copper or a copper compound.

[0092] For example, copper precursors can be copper iodide, copper bromide, copper chloride, copper acetylacetonate, or any combination thereof.

[0093] According to the embodiments, in addition to the foregoing, the precursor containing a Group II element may be zinc or a zinc compound, cadmium or a cadmium compound, or mercury or a mercury compound.

[0094] For example, precursors containing Group II elements can be zinc acetate, dimethyl zinc, diethyl zinc, zinc carboxylate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, cadmium oxide, dimethyl cadmium, diethyl cadmium, cadmium carbonate, cadmium acetate dihydrate, cadmium acetylacetonate, cadmium fluoride, cadmium chloride, cadmium iodide, cadmium bromide, cadmium perchlorate, cadmium phosphide, cadmium nitrate, cadmium sulfate, cadmium carboxylate, mercuric iodide, mercuric bromide, mercuric fluoride, mercuric cyanide, mercuric nitrate, mercuric perchlorate, mercuric sulfate, mercuric oxide, mercuric carbonate, mercuric carboxylate, etc.

[0095] According to embodiments, the precursor containing a group III element can be aluminum or an aluminum compound, gallium or a gallium compound, indium or an indium compound, or thallium or a thallium compound.

[0096] For example, precursors containing Group III elements can be aluminum phosphate, aluminum acetylacetonate, aluminum chloride, aluminum fluoride, aluminum oxide, aluminum nitrate, aluminum sulfate, gallium acetylacetonate, gallium chloride, gallium fluoride, gallium oxide, gallium nitrate, gallium sulfate, indium acetate, indium chloride, indium oxide, indium nitrate, indium sulfate, indium carboxylate, thallium acetate, thallium chloride, thallium oxide, thallium nitrate, thallium sulfate, thallium carboxylate, etc.

[0097] According to the embodiments, in addition to the above, the precursor containing a group VI element can be sulfur or a sulfur compound, selenium or a selenium compound, or tellurium or a tellurium compound.

[0098] For example, precursors containing group VI elements can be sulfur, sulfur-containing oleylamine, phosphine sulfide, trioctylphosphine sulfide, trienylphosphine sulfide, alkylaminosulfides, alkenylaminosulfides, alkyl mercaptans, selenium, trialkylphosphine selenide, trienylphosphine selenide, alkylaminoselenate, alkenylaminoselenate, trialkylphosphine telluride, trienylphosphine telluride, alkylaminotellurides, alkenylaminotellurides, etc.

[0099] According to an embodiment, the group III element precursor in the process of nucleus formation can be gallium chloride, indium chloride, and any combination thereof.

[0100] According to an embodiment, the group VI element-containing precursor in the process of nucleus formation can be S(sulfur)-oleylamine.

[0101] According to an embodiment, the precursor containing a group II element in the formation of the first shell can be Zn(zinc)-oleylamine, and the precursor containing a group VI element can be S(sulfur)-oleylamine.

[0102] According to an embodiment, the composition for forming the core and the composition for forming the first shell may each further include a solvent.

[0103] According to the embodiments, the solvent may be an organic solvent. For example, the solvent may include 1-octadecene (ODE), trioctylamine (TOA), trioctylphosphine (TOP), oleylamine, or any combination thereof.

[0104] According to embodiments, the method for preparing quantum dots may further include surface treatment of the surface of the first shell or the second shell with organic ligands or metal halides.

[0105] According to embodiments, the organic ligand may include C4-C 30 fatty acid.

[0106] For example, organic ligands may include palmitic acid, palmitoleic acid, stearic acid, oleic acid, trioctylphosphine, trioctylphosphine oxide, oleylamine, octylamine, trioctylamine, hexadecylamine, octylthiol, dodecylthiol, hexylphosphonic acid, tetradecylphosphonic acid, octylphosphonic acid, etc.

[0107] The method for preparing quantum dots according to the embodiments may include preparing a first shell, which includes preparing a first composition for forming the first shell by mixing the core with a precursor containing a group VI element, thereby suppressing and preventing the full width at half maximum (FWHM) from increasing as the content of the group VI element in the core decreases.

[0108] By mixing the nucleus and a precursor containing group VI elements at low temperatures, the reduction in the full width at half maximum (FWHM) of the emission spectrum caused by heat treatment of the nucleus at high temperatures can be minimized.

[0109] By including precursors containing group VI elements and amine compounds, the products generated during the reaction of group VI elements and amine compounds can further enhance synthetic reactivity through reaction with the nucleus metal and precursors.

[0110] In an embodiment, the preparation of the first shell may include reacting a group VI element precursor with the nucleus to minimize the increase in full width at half maximum (FWHM) through nucleus stabilization, thereby providing quantum dots with excellent quantum yield and improved lightfastness.

[0111] Therefore, this embodiment can provide quantum dots with improved chemical stability and PL properties by achieving excellent quantum yield (QY) and high lightfastness based on full width at half maximum (FWHM).

[0112] Therefore, quantum dots can be used to provide high-quality optical components and electronic devices.

[0113] In the following text, by reference Figure 1 The following description of quantum dot 100 according to an embodiment will be presented. The description of quantum dot 100 below can also be applied to methods for preparing quantum dots.

[0114] [ Figure 1 [Description]

[0115] Figure 1 This is a schematic cross-sectional view of a quantum dot 100 according to an embodiment. The quantum dot 100 includes a core 10 and a first shell 20.

[0116] [Quantum Dot 100]

[0117] Figure 1 The quantum dot 100 may include: a core 10, including copper (Cu), group III elements and group VI elements; and a first shell 20 covering the core 10.

[0118] According to an embodiment, core 10 may include a group I-III-VI semiconductor compound.

[0119] According to embodiments, for example, the full width at half maximum (FWHM) of the emission wavelength spectrum of core 10 can be in the range of approximately 15 nm to approximately 50 nm. For example, the FWHM of the emission wavelength spectrum of core 10 can be in the range of approximately 20 nm to approximately 50 nm. For example, the FWHM of the emission wavelength spectrum of core 10 can be in the range of approximately 25 nm to approximately 50 nm. For example, the FWHM of the emission wavelength spectrum of core 10 can be in the range of approximately 30 nm to approximately 50 nm. For example, the FWHM of the emission wavelength spectrum of core 10 can be in the range of approximately 35 nm to approximately 50 nm. For example, the FWHM of the emission wavelength spectrum of core 10 can be in the range of approximately 40 nm to approximately 50 nm. For example, the FWHM of the emission wavelength spectrum of core 10 can be in the range of approximately 15 nm to approximately 45 nm. For example, the FWHM of the emission wavelength spectrum of core 10 can be in the range of approximately 20 nm to approximately 45 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 25 nm to approximately 45 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 30 nm to approximately 45 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 35 nm to approximately 45 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 40 nm to approximately 45 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 15 nm to approximately 35 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 20 nm to approximately 35 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 25 nm to approximately 35 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 30 nm to approximately 35 nm. For example, the field-wide wavelength range (FWHM) of the emission wavelength spectrum of nucleus 10 can be in the range of approximately 15 nm to approximately 30 nm. For example, the full width at half maximum (FWHM) of the emission wavelength spectrum of core 10 can be in the range of approximately 20 nm to approximately 30 nm. For example, the full width at half maximum (FWHM) of the emission wavelength spectrum of core 10 can be in the range of approximately 25 nm to approximately 30 nm. For example, the full width at half maximum (FWHM) of the emission wavelength spectrum of core 10 can be in the range of approximately 15 nm to approximately 25 nm. For example, the full width at half maximum (FWHM) of the emission wavelength spectrum of core 10 can be in the range of approximately 20 nm to approximately 25 nm. For example, the full width at half maximum (FWHM) of the emission wavelength spectrum of core 10 can be in the range of approximately 15 nm to approximately 20 nm. When the full width at half maximum (FWHM) of core 10 of the quantum dot 100 meets the ranges mentioned above, color purity and color reproducibility can be excellent, optical viewing angle can be improved, and quantum yield (QY) can be improved.

[0120] According to an embodiment, based on a total of 100 wt% of core 10, the amount of copper (Cu) may be included in the range of about 10 wt% to about 25 wt%.

[0121] For example, based on a total of 100 wt% of core 10, it may include approximately 10 wt% to approximately 25 wt%, approximately 11 wt% to approximately 25 wt%, approximately 12 wt% to approximately 25 wt%, approximately 13 wt% to approximately 25 wt%, approximately 14 wt% to approximately 25 wt%, approximately 15 wt% to approximately 25 wt%, approximately 16 wt% to approximately 25 wt%, approximately 17 wt% to approximately 25 wt%, approximately 18 wt% to approximately 25 wt%, approximately 19 wt% to approximately 25 wt%, approximately 20 wt% to approximately 25 wt%, approximately 21 wt% to approximately 25 wt%, approximately 22 wt% to approximately 25 wt%, and approximately 23 wt% to approximately 25 wt%. t%, approximately 24wt% to approximately 25wt%, approximately 10wt% to approximately 24wt%, approximately 11wt% to approximately 24wt%, approximately 12wt% to approximately 24wt%, approximately 13wt% to approximately 24wt%, approximately 14wt% to approximately 24wt%, approximately 15wt% to approximately 24wt%, approximately 16wt% to approximately 24wt%, approximately 17wt% to approximately 24wt%, approximately 18wt% to approximately 24wt%, approximately 19wt% to approximately 24wt%, approximately 20wt% to approximately 24wt%, approximately 21wt% to approximately 24wt%, approximately 22wt% to approximately 24wt%, approximately 23wt% to approximately 24wt%, approximately 10wt% to about 23wt%, about 11wt% to about 23wt%, about 12wt% to about 23wt%, about 13wt% to about 23wt%, about 14wt% to about 23wt%, about 15wt% to about 23wt%, about 16wt% to about 23wt%, about 17wt% to about 23wt%, about 18wt% to about 23wt%, about 19wt% to about 23wt%, about 20wt% to about 23wt%, about 21wt% to about 23wt%, about 22wt% to about 23wt%, about 11wt% to about 22wt%, about 13wt% to about 22wt%, about 15wt% Amounts of copper (Cu) ranging from approximately 22 wt%, approximately 17 wt% to approximately 22 wt%, approximately 19 wt% to approximately 22 wt%, approximately 21 wt% to approximately 22 wt%, approximately 10 wt% to approximately 21 wt%, approximately 12 wt% to approximately 21 wt%, approximately 14 wt% to approximately 21 wt%, approximately 16 wt% to approximately 21 wt%, approximately 18 wt% to approximately 21 wt%, approximately 20 wt% to approximately 21 wt%, approximately 11 wt% to approximately 20 wt%, approximately 13 wt% to approximately 20 wt%, approximately 15 wt% to approximately 20 wt%, approximately 17 wt% to approximately 20 wt%, or approximately 19 wt% to approximately 20 wt%.

[0122] According to an embodiment, based on a total of 100 wt% of core 10, it may include a group III element in an amount ranging from about 10 wt% to about 30 wt%.

[0123] For example, when at least two or more group III elements are present, based on a total of 100 wt% of nucleus 10, two or more group III elements may be included in a combined amount ranging from about 10 wt% to about 30 wt%.

[0124] According to an embodiment, based on a total of 100 wt% of core 10, it may include a group VI element in an amount ranging from about 40 wt% to about 60 wt%.

[0125] For example, when at least two or more Group VI elements are present, based on a total of 100 wt% of core 10, two or more Group VI elements may be included in a combined amount ranging from about 40 wt% to about 60 wt%.

[0126] According to the embodiments, the group III elements can be aluminum (Al), gallium (Ga), indium (In), or thallium (Tl). (Nh) or any combination thereof.

[0127] For example, the group III elements included in core 10 can be aluminum (Al), gallium (Ga), indium (In), or any combination thereof; can be gallium (Ga), indium (In), or any combination thereof; or can be gallium (Ga) and indium (In).

[0128] For example, when the Group III elements included in core 10 are gallium (Ga) and indium (In), based on a total of 100 wt% of core 10, gallium may be included in an amount ranging from about 5 wt% to about 20 wt%, and indium may be included in an amount ranging from about 10 wt% to about 20 wt% based on a total of 100 wt% of core 10.

[0129] For example, when the group III elements included in core 10 are gallium (Ga) and indium (In), the weight ratio of gallium can be greater than that of indium.

[0130] According to embodiments, group VI elements can be oxygen (O), sulfur (S), selenium (Se), tellurium (Te), or any combination thereof.

[0131] For example, group VI elements included in nucleus 10 can be sulfur (S), selenium (Se), or any combination thereof.

[0132] According to an embodiment, core 10 may include copper (Cu), indium (In), gallium (Ga), and sulfur (S).

[0133] For example, nucleus 10 can be a Cu-In-Ga-S (CIGS) quantum dot nucleus composed of copper (Cu), indium (In), gallium (Ga), and sulfur (S).

[0134] According to an embodiment, based on a total of 100 wt% of core 10, core 10 may include an amount of copper (Cu) ranging from about 10 wt% to about 25 wt%, an amount of indium (In) ranging from about 10 wt% to about 20 wt%, an amount of gallium (Ga) ranging from about 10 wt% to about 20 wt%, and an amount of sulfur (S) ranging from about 40 wt% to about 60 wt%.

[0135] According to an embodiment, the first shell 20 may include a group II-VI semiconductor compound, a group III-VI semiconductor compound, a group III-V semiconductor compound, or any combination thereof.

[0136] According to an embodiment, the quantum dot 100 may further include a second shell (not shown) covering the first shell 20.

[0137] According to an embodiment, the second shell may include a group II-VI semiconductor compound, a group III-VI semiconductor compound, a group III-V semiconductor compound, or any combination thereof.

[0138] According to embodiments, Group II elements can be magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), mercury (Hg), or any combination thereof. For example, a Group II element can be zinc (Zn) or magnesium (Mg).

[0139] According to embodiments, the II-VI group semiconductor compound can be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

[0140] According to embodiments, the III-VI semiconductor compound may be GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, InGaSe3, or any combination thereof.

[0141] According to embodiments, the III-V semiconductor compounds can be GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and any combination thereof.

[0142] According to an embodiment, the first shell 20 may include zinc (Zn) and sulfur (S). For example, the first shell 20 may include ZnS.

[0143] According to an embodiment, the quantum dot 100 may further include an intermediate shell disposed between the first shell and the second shell, and the intermediate shell may include the same material as the first shell 20 and the same material as the second shell.

[0144] According to an embodiment, Cu within the core 10 may exist at a uniform concentration or at a non-uniform concentration.

[0145] According to an embodiment, the Group III elements within core 10 may exist at a uniform concentration or at a non-uniform concentration.

[0146] According to an embodiment, the group VI elements within core 10 may exist at a uniform concentration or at a non-uniform concentration.

[0147] According to an embodiment, the elements within the first shell 20 may exist at a uniform concentration or at a non-uniform concentration.

[0148] According to an embodiment, the elements within the second shell may exist at a uniform concentration or at a non-uniform concentration.

[0149] According to an embodiment, the concentrations of elements included in the first shell 20 and the second shell can form a concentration gradient that varies based on the distance from the core 10.

[0150] According to an embodiment, the radius L1 of the core 10 of the quantum dot 100 can be greater than or equal to about 4 nm. For example, the radius L1 of the core 10 can be in the range of about 4 nm to about 8 nm. For example, the radius L1 of the core 10 can be in the range of about 4 nm to about 7.5 nm. For example, the radius L1 of the core 10 can be in the range of about 4 nm to about 7 nm. For example, the radius L1 of the core 10 can be in the range of about 4 nm to 6 nm.

[0151] According to an embodiment, the thickness L2 of the first shell 20 of the quantum dot 100 can be greater than or equal to 0.5 nm. For example, the thickness L2 of the first shell 20 can be in the range of about 0.5 nm to about 3 nm. For example, the thickness L2 of the first shell 20 can be in the range of about 0.5 nm to about 2 nm. For example, the thickness L2 of the first shell 20 can be in the range of about 0.5 nm to about 1 nm.

[0152] According to an embodiment, the thickness of the second shell of the quantum dot 100 can be greater than or equal to 0.5 nm. For example, the thickness of the second shell can be in the range of about 0.5 nm to about 3 nm. For example, the thickness of the second shell can be in the range of about 1 nm to about 3 nm. For example, the thickness of the second shell can be in the range of about 2 nm to about 3 nm.

[0153] According to an embodiment, the sum of the thickness L2 of the first shell 20 and the thickness of the second shell can be in the range of about 1 nm to about 4 nm.

[0154] For example, the total thickness can range from approximately 1 nm to approximately 4 nm. For example, the total thickness can range from approximately 1 nm to approximately 3 nm.

[0155] In the specification, "radius L1 of core 10" can be the distance from the center of quantum dot 100 to the interface between core 10 and first shell 20.

[0156] In the specification, the "thickness L2 of the first shell 20" can be the distance from the interface between the core 10 and the first shell 20 to the outer surface of the first shell 20, which corresponds to the value obtained by subtracting the radius L1 of the core 10 from the distance L3 from the center of the quantum dot 100 to the outer surface of the first shell 20.

[0157] According to an embodiment, the amount of cations in the first shell 20 may be from about 10 parts by weight to about 50 parts by weight, based on the total weight of the first shell 20.

[0158] According to the embodiments, the shape of the quantum dot 100 can be spherical nanoparticles, pyramidal nanoparticles, multi-armed nanoparticles or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanosheets, etc.

[0159] According to an embodiment, the quantum dot 100 may be spherical.

[0160] According to an embodiment, quantum dot 100 can emit blue, green, or red light. For example, quantum dot 100 can emit red light.

[0161] According to an embodiment, the quantum dot 100 can emit light with a maximum emission wavelength in the range of approximately 500 nm to approximately 650 nm.

[0162] According to embodiments, the quantum yield (QY) of quantum dot 100 can be in the range of approximately 70% to approximately 98%. For example, the QY of quantum dot 100 can be in the range of approximately 75% to approximately 97%. For example, the QY of quantum dot 100 can be in the range of approximately 85% to approximately 95%.

[0163] According to an embodiment, quantum dot 100 may have a full width at half maximum (FWHM) of an emission wavelength spectrum less than or equal to about 60 nm. For example, quantum dot 100 may have an FWHM of an emission wavelength spectrum less than or equal to about 58 nm. Quantum dot 100 may have an FWHM of an emission wavelength spectrum less than or equal to about 55 nm. When the FWHM is within any of these ranges, color purity or color reproducibility can be improved. Light emitted through these quantum dots 100 can be emitted in all directions, which can improve viewing angle.

[0164] According to an embodiment, based on a total of 100 wt% of quantum dots 100, quantum dots 100 may include: copper (Cu) in an amount ranging from about 5 wt% to about 15 wt%; a group III element in an amount ranging from about 10 wt% to about 20 wt%; a group IV element in an amount ranging from about 40 wt% to about 50 wt%; and a group II element in an amount ranging from about 25 wt% to about 35 wt%.

[0165] According to an embodiment, based on a total of 100 wt% of quantum dots 100, quantum dots 100 may include: copper (Cu) in an amount ranging from about 5 wt% to about 15 wt%; indium (In) in an amount ranging from about 5 wt% to about 10 wt%; gallium (Ga) in an amount ranging from about 5 wt% to about 10 wt%; sulfur (S) in an amount ranging from about 40 wt% to about 50 wt%; and zinc (Zn) in an amount ranging from about 25 wt% to about 35 wt%.

[0166] According to an embodiment, the amount of gallium (Ga) included in the quantum dot 100 may be greater than the amount of indium (In) included in the quantum dot 100, based on weight.

[0167] As used herein, quantum dot 100 can be a crystal of a semiconductor compound and can include any material capable of emitting light of various wavelengths depending on the size of the crystal. Quantum dot 100 can emit light of various wavelengths by controlling the elemental proportions in the quantum dot 100 compound.

[0168] The diameter of quantum dot 100 can be, for example, in the range of about 1 nm to about 10 nm.

[0169] According to an embodiment, quantum dot 100 can be prepared by the method for preparing quantum dots described herein.

[0170] Quantum dots 100 can be synthesized through wet chemical processes, metal-organic chemical vapor deposition, molecular beam epitaxy, or similar processes.

[0171] Wet chemical processes are methods for growing quantum dot crystals by mixing organic solvents and precursor materials. During crystal growth, the organic solvent naturally acts as a dispersant that coordinates with the surface of the quantum dot crystal and controls its growth. Therefore, compared to vapor deposition methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), the growth of quantum dot particles can be controlled through a less expensive and easier-to-perform process.

[0172] In addition to the aforementioned group II-VI semiconductor compounds, quantum dot 100 may also include individual group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0173] Examples of group II-VI semiconductor compounds may include: binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZ nSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; and any combination thereof.

[0174] Examples of group III-V semiconductor compounds may include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; or quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; and any combination thereof. In embodiments, group III-V semiconductor compounds may also include group II elements. Examples of group III-V semiconductor compounds that also include group II elements may include InZnP, InGaZnP, InAlZnP, etc.

[0175] Examples of III-VI semiconductor compounds may include: binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds such as InGaS3, InGaSe3, etc.; and any combination thereof.

[0176] Examples of group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, AgAlO2, etc.; quaternary compounds such as AgInGaS2, AgInGaSe2, etc.; and any combination thereof.

[0177] Examples of group IV-VI semiconductor compounds may include: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds, such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; and any combination thereof.

[0178] Examples of Group IV elements or compounds may include: single-element materials such as Si, Ge, etc.; binary compounds such as SiC, SiGe, etc.; and any combination thereof.

[0179] Each element included in a compound, such as a binary, ternary, or quaternary compound, may exist within the particles at a homogeneous or non-homogeneous concentration. For example, a formula may indicate the elements included in a compound, but the elemental proportions of the compound can vary. For instance, AgInGaS2 may refer to AgIn. x Ga 1-x S2 (where x is a real number between 0 and 1).

[0180] The shell 20 of the quantum dot 100 can serve as a protective layer to maintain semiconductor properties by preventing chemical modification of the core 10 and / or can serve as a charging layer to impart electrophoretic properties to the quantum dot 100. The shell 20 can be monolayered or multilayered. The interface between the core 10 and the shell 20 can have a concentration gradient in which the concentration of the elements present in the shell 20 decreases toward the core 10.

[0181] The shell 20 of the quantum dot 100 may also include metal oxides, quasi-metal oxides, non-metal oxides, semiconductor compounds, and any combination thereof. Examples of metal oxides, quasi-metal oxides, or non-metal oxides may include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.; and any combination thereof.

[0182] Examples of semiconductor compounds may include group II-VI, III-V, III-VI, I-III-VI, IV-VI and any combinations thereof as disclosed herein. For example, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS2, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb and any combinations thereof.

[0183] By adjusting the size of quantum dots, the band gap can be controlled, allowing light of various wavelengths to be obtained from the quantum dot emission layer. Therefore, by using quantum dots of different sizes, light-emitting elements that emit light of different wavelengths can be realized. In embodiments, the size of the quantum dots or the elemental ratio within the quantum dot compound can be selected to emit red, green, and / or blue light. In embodiments, the quantum dots can be configured such that various colors of light can be combined to emit white light.

[0184] [equipment]

[0185] Quantum dots can be used in a variety of electronic devices. Therefore, according to another embodiment, an electronic device may include quantum dots.

[0186] According to an embodiment, the electronic device may include a light source and a color conversion component disposed in the path of light emitted from the light source, wherein the color conversion component may include quantum dots.

[0187] [ Figure 2 [Description]

[0188] Figure 2 This is a schematic cross-sectional view of an electronic device 200A according to an embodiment. Figure 2 The electronic device 200A includes a substrate 210, a light source 220 disposed on the substrate 210, and a color conversion component 230 disposed on the light source 220.

[0189] For example, the light source 220 can be a backlight unit (BLU) used in a liquid crystal display (LCD), a fluorescent lamp, a light-emitting element, an organic light-emitting element, or a quantum dot light-emitting element (QLED), or any combination thereof. The color conversion component 230 can be positioned in at least one direction of travel of the light emitted from the light source 220.

[0190] At least one region of the color conversion component 230 of the electronic device 200A may include a quantum dot, and the region may absorb light emitted from the light source 220 and may emit red light having a maximum emission wavelength in the range of about 600 nm to about 700 nm, or may emit blue light having a maximum emission wavelength in the range of about 430 nm to about 480 nm.

[0191] Although the color conversion component 230 may be positioned in at least one direction of travel of the light emitted from the light source 220, the embodiments do not preclude the possibility of including other elements between the color conversion component 230 and the light source 220.

[0192] For example, a polarizer, liquid crystal layer, light guide plate, diffuser plate, prism sheet, microlens sheet, brightness enhancement sheet, reflective film, color filter, or any combination thereof may also be included between the light source 220 and the color conversion component 230.

[0193] In another example, the color conversion component 230 may further include a polarizer, a liquid crystal layer, a light guide plate, a diffuser, a prism sheet, a microlens sheet, a brightness enhancement sheet, a reflective film, a color filter, or any combination thereof.

[0194] Figure 2 The electronic device 200A shown may be an example of a device according to an embodiment, and may take various forms according to the relevant art, and may also include various configurations according to the relevant art.

[0195] In another embodiment, the electronic device may include a structure in which the light source, light guide plate, color conversion component, first polarizer, liquid crystal layer, color filter and second polarizer are arranged in the order stated herein, but the embodiments are not limited thereto.

[0196] In another embodiment, the electronic device may include a structure in which the light source, light guide plate, first polarizer, liquid crystal layer, second polarizer and color conversion component are arranged in the order stated herein, but the embodiments are not limited thereto.

[0197] In the above embodiments, the color filter may include a pigment or dye. In the above embodiments, one of the first polarizer and the second polarizer may be a vertical polarizer, and the other may be a horizontal polarizer.

[0198] [Light-emitting element]

[0199] Quantum dots, as disclosed herein, can be used as emitters. According to another embodiment, an electronic device may include a light-emitting element comprising: a first electrode; a second electrode facing the first electrode; and an intermediate layer disposed between the first and second electrodes; wherein the quantum dots are included in the light-emitting element (e.g., the emitting layer of the light-emitting element). The light-emitting element may also include a hole transport region disposed between the first electrode and the emitting layer, an electron transport region disposed between the emitting layer and the second electrode, or any combination thereof.

[0200] [ Figure 3 [Description]

[0201] Figure 3 This is a schematic cross-sectional view of the light-emitting element 1A according to an embodiment.

[0202] The light-emitting element 1A may include a first electrode 110, a second electrode 150 facing the first electrode 110, and an intermediate layer 130 disposed between the first electrode 110 and the second electrode 150, wherein the emitting layer comprises quantum dots. The layers of the light-emitting element 1A will now be described.

[0203] In embodiments, at least one of a plurality of quantum dots may be used in the light-emitting element (e.g., an organic light-emitting element). Therefore, embodiments provide a light-emitting element that may include a first electrode, a second electrode facing the first electrode, an intermediate layer disposed between the first and second electrodes and including an emission layer, and quantum dots as disclosed herein.

[0204] According to an embodiment,

[0205] The first electrode of a light-emitting element can be an anode.

[0206] The second electrode of the light-emitting element can be a cathode.

[0207] The intermediate layer may further include a hole transport region disposed between the first electrode and the emitter layer, and an electron transport region disposed between the emitter layer and the second electrode.

[0208] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof, and

[0209] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0210] According to another embodiment, quantum dots can be disposed between the first and second electrodes of the light-emitting element. Therefore, quantum dots can be included in the intermediate layer of the light-emitting element, for example, in the emitting layer of the intermediate layer.

[0211] According to another embodiment, the emitting layer in the intermediate layer of the light-emitting element may include a dopant and a host, and the host may include a quantum dot. For example, a quantum dot may be used as the host. The emitting layer may emit red, green, blue, and / or white light. For example, the emitting layer may emit red light. Red light may have a maximum emission wavelength, for example, in the range of about 600 nm to about 700 nm.

[0212] According to another embodiment, the emitting layer in the intermediate layer of the light-emitting element may include a dopant and a host, the host may include a quantum dot, and the dopant may emit blue or red light. In this embodiment, the dopant may include a transition metal and m ligands, where m is an integer from 1 to 6. In this embodiment, the m ligands may be the same or different from each other, and at least one of the m ligands may be connected to the transition metal via a carbon-transition metal bond, which may be a coordinate bond. For example, at least one of the m ligands may be a carbene ligand (e.g., Ir(pmp)3, etc.). For example, the transition metal may be iridium, platinum, osmium, palladium, rhodium, gold, etc. The emitting layer and dopant may be the same as described herein.

[0213]

[0214] According to another embodiment, the light-emitting element may include a capping layer disposed outside the first electrode or outside the second electrode.

[0215] For example, the light-emitting element may further include at least one of a first capping layer disposed outside the first electrode and a second capping layer disposed outside the second electrode, wherein at least one of the first and second capping layers may include a quantum dot. The first and / or second capping layers may be the same as those described herein.

[0216] In one embodiment, the light-emitting element may include a first capping layer disposed outside the first electrode and comprising quantum dots.

[0217] In one embodiment, the light-emitting element may include a second capping layer disposed outside the second electrode and comprising quantum dots.

[0218] In an embodiment, the light-emitting element may further include both a first capping layer outside the first electrode and a second capping layer outside the second electrode.

[0219] In the specification, the statement "(intermediate layer and / or capping layer) includes quantum dots" can be interpreted as meaning that (intermediate layer and / or capping layer) may include quantum dots or may include two or more different types of quantum dots.

[0220] In the specification, the term "intermediate layer" can refer to a single layer and / or multiple layers disposed between the first electrode and the second electrode in the light-emitting element.

[0221] According to embodiments, the electronic device may include quantum dots and / or light-emitting elements as described above. The electronic device may also include thin-film transistors. For example, the electronic device may also include a thin-film transistor comprising a source electrode and a drain electrode, wherein a first electrode of the light-emitting element may be electrically connected to the source electrode or the drain electrode. In embodiments, the electronic device may also include a color filter, a color conversion layer, a touchscreen layer, a polarizing layer, or any combination thereof. The electronic device may be the same as described herein.

[0222] In the following text, by reference Figure 3 The structure and fabrication method of the light-emitting element 1A according to the embodiments will be described.

[0223] [First Electrode 110]

[0224] exist Figure 3In this embodiment, a substrate may be further included below the first electrode 110 or on top of the second electrode 150. In embodiments, the substrate may be a glass substrate or a plastic substrate. In embodiments, the substrate may be a flexible substrate, which may include plastics with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0225] For example, the first electrode 110 can be formed by providing a first electrode material on the upper portion of the substrate using a deposition method or sputtering method. When the first electrode 110 is an anode, a high work function material that facilitates hole injection can be used as the first electrode material.

[0226] The first electrode 110 can be a reflective electrode, a semi-transparent reflective electrode, or a transmissive electrode. To form the first electrode 110 as a transmissive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof can be used as the material for the first electrode 110. In embodiments, when the first electrode 110 is a semi-transparent reflective electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof can be used as the material for the first electrode 110.

[0227] The first electrode 110 may have a structure consisting of a single layer or a structure comprising multiple layers. In an embodiment, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0228] [Middle Layer 130]

[0229] Intermediate layer 130 may be disposed on first electrode 110. Intermediate layer 130 may include emitter layer.

[0230] The intermediate layer 130 may also include a hole transport region between the first electrode 110 and the emitter layer and an electron transport region between the emitter layer and the second electrode 150.

[0231] In addition to various organic materials, the intermediate layer 130 may also include metal-containing compounds such as organometallic compounds and inorganic materials such as quantum dots.

[0232] The intermediate layer 130 may include two or more emitting units stacked between the first electrode 110 and the second electrode 150, and at least one charge generating layer disposed between adjacent emitting units in the two or more emitting units. When the intermediate layer 130 includes two or more emitting units and at least one charge generating layer as described above, the light-emitting element 1A may be a tandem light-emitting element.

[0233] [Hole transport region within intermediate layer 130]

[0234] Hole transport regions can have a structure consisting of a single layer made of a single material, a structure consisting of a single layer comprising different materials, or a structure comprising multiple layers containing different materials.

[0235] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.

[0236] In an embodiment, the hole transport region may have a multi-layer structure, such as a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / emission auxiliary layer, a hole injection layer / emission auxiliary layer, a hole transport layer / emission auxiliary layer, or a hole injection layer / hole transport layer / electron blocking layer, wherein the layers of each structure may be stacked from the first electrode 110 in the order stated therein, but the structure of the hole transport region is not limited thereto.

[0237] In an embodiment, the hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0238] [Formula 201]

[0239]

[0240] [Formula 202]

[0241]

[0242] In equations 201 and 202,

[0243] L 201 To L 204 Each can be independently assigned to at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0244] L 205 It can be *-O-*', *-S-*', or *-N(Q) 201)-*'、by at least one R 10a Substituted or unsubstituted C1-C 20 Alkylene, by at least one R 10a Substituted or unsubstituted C2-C 20 alkenyl group, with at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0245] xa1 to xa4 can each be an integer from 0 to 5 independently.

[0246] xa5 can be an integer from 1 to 10.

[0247] R 201 To R 204 and Q 201 Each can be independently assigned to at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0248] R 201 and R 202 It can optionally be via a single bond, by at least one R 10a Substituted or unsubstituted C1-C5 alkylene groups, or those containing at least one R 10a Substituted or unsubstituted C2-C5 alkenyl groups are linked together to form a structure with at least one R 10a Substituted or unsubstituted C8-C 60 Polycyclic groups (e.g., carbazole groups, etc.) (see, for example, compound HT16, etc.)

[0249] R 203 and R 204 It can optionally be via a single bond, by at least one R 10a Substituted or unsubstituted C1-C5 alkylene groups, or those containing at least one R 10a Substituted or unsubstituted C2-C5 alkenyl groups are linked together to form a structure with at least one R 10a Substituted or unsubstituted C8-C 60 Polycyclic groups,

[0250] na1 can be an integer from 1 to 4.

[0251] In the embodiments, the compound represented by formula 201 and the compound represented by formula 202 may each independently include at least one of the groups represented by formulas CY201 to CY217:

[0252]

[0253] In equations CY201 to CY217, R 10b and R 10c They can be independently related to R. 10a The descriptions are the same, CY ring 201 To CY 204 Each can be independently designated as C3-C. 20 Carbocyclic or C1-C 20 Heterocyclic group, and at least one hydrogen atom in formulas CY201 to CY217 can be R as disclosed herein. 10a Replaced or not replaced.

[0254] According to the embodiments, in formulas CY201 to CY217, the ring CY 201 To CY 204 Each can be phenyl, naphthyl, phenanthryl or anthracene, and each can be independent of the other.

[0255] According to another embodiment, the compound represented by formula 201 and the compound represented by formula 202 may each independently include at least one of the groups represented by formulas CY201 to CY203.

[0256] According to another embodiment, the compound represented by formula 201 may include at least one of the groups represented by formulas CY201 to CY203 and at least one of the groups represented by formulas CY204 to CY217.

[0257] According to another embodiment, in formula 201, xa1 can be 1, R 201 It can be a group represented by one of the formulas CY201 to CY203, xa2 can be 0, and R 202 It can be a group represented by one of the formulas CY204 to CY207.

[0258] According to another embodiment, the compound represented by formula 201 and the compound represented by formula 202 may each not include the groups represented by formulas CY201 to CY203.

[0259] According to another embodiment, the compound represented by formula 201 and the compound represented by formula 202 may each not include the groups represented by formulas CY201 to CY203, and may each independently include at least one of the groups represented by formulas CY204 to CY217.

[0260] In the embodiments, the compounds represented by formula 201 and the compounds represented by formula 202 may each not include the groups represented by formulas CY201 to CY217.

[0261] In embodiments, the hole transport region may include one of compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), PANI / DBSA (polyaniline / dodecylbenzenesulfonic acid), PEDOT / PSS (poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate)), PANI / CSA (polyaniline / camphorsulfonic acid), PANI / PSS (polyaniline / poly(4-styrenesulfonate)), or any combination thereof:

[0262]

[0263]

[0264]

[0265]

[0266]

[0267] The thickness of the hole transport region can be approximately up to approximately Within a certain range. For example, the thickness of the hole transport region can be approximately... up to approximately Within the range. When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately... up to approximately Within a certain range, and the thickness of the hole transport layer can be approximately... up to approximately Within a certain range. For example, the thickness of the hole injection layer can be approximately... up to approximately Within a certain range. For example, the thickness of the hole transport layer can be approximately... up to approximately Within the aforementioned range, when the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer meet the aforementioned range, satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage.

[0268] The emission assist layer can increase luminous efficiency by compensating for the optical resonant distance according to the wavelength of the light emitted from the emission layer, and the electron blocking layer can prevent electrons from leaking from the emission layer into the hole transport region. Materials that can be included in the hole transport region described above can be included in both the emission assist layer and the electron blocking layer.

[0269] [p-dopant]

[0270] In addition to the materials mentioned above, the hole transport region may also include charge-generating materials to improve conductivity. The charge-generating materials may be (e.g., in the form of a monolayer composed of charge-generating materials) uniformly or non-uniformly dispersed within the hole transport region.

[0271] The charge-generating material can be, for example, a p-doped agent.

[0272] In the embodiments, the lowest unoccupied molecular orbital (LUMO) level of the p-doped agent may be less than or equal to approximately -3.5 eV.

[0273] According to embodiments, p-dopers may include quinone derivatives, cyano-containing compounds, compounds containing elements EL1 and EL2, or any combination thereof.

[0274] Examples of quinone derivatives may include TCNQ, F4-TCNQ, etc.

[0275]

[0276] Examples of cyano-containing compounds may include HAT-CN, compounds represented by formula 221, etc.

[0277]

[0278] [Equation 221]

[0279]

[0280] In Equation 221,

[0281] R 221 To R 223 Each can be independently assigned to at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0282] And R 221 To R 223 At least one of them can be independently: C3-C 60 Carbocyclic or C1-C 60Heterocyclic groups, substituted with the following groups: cyano; -F; -Cl; -Br; -I; C1-C substituted with cyano, -F, -Cl, -Br, -I or any combination thereof. 20 Alkyl groups; or any combination thereof.

[0283] In a compound comprising elements EL1 and EL2, element EL1 may be a metal, a metalloid, or any combination thereof, and element EL2 may be a nonmetal, a metalloid, or any combination thereof.

[0284] Examples of metals may include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (… Co, rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.; later transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanides (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); and so on.

[0285] Examples of metalloids can include silicon (Si), antimony (Sb), tellurium (Te), etc.

[0286] Examples of nonmetals can include oxygen (O), halogens (e.g., F, Cl, Br, I, etc.).

[0287] Examples of compounds including elements EL1 and EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), quasi-metal halides (e.g., quasi-metal fluorides, quasi-metal chlorides, quasi-metal bromides, quasi-metal iodides, etc.), metal tellurides, or any combination thereof.

[0288] Examples of metal oxides may include tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxide (e.g., ReO3, etc.), etc.

[0289] Examples of metal halides can include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, etc.

[0290] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0291] Examples of alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.

[0292] Examples of transition metal halides may include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), and tantalum halides (e.g., TaF3, TaCl3, T...). aBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, etc.). 2. ReI2, etc.), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrB2, etc.). r2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0293] Examples of post-transition metal halides may include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), tin halides (e.g., SnI2, etc.), etc.

[0294] Examples of lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, SmI3, etc.

[0295] Examples of quasi-metal halides can include antimony halides (e.g., SbCl5, etc.).

[0296] Examples of metal tellurides can include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, Cs₂Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, F₂Te, etc.). (eTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

[0297] [Emitting layer in intermediate layer 130]

[0298] When the light-emitting element 1A is a full-color light-emitting element, the emitting layer can be patterned for each individual sub-pixel as a red emitting layer, a green emitting layer, and / or a blue emitting layer. In embodiments, the emitting layer can have a structure in which two or more of the red, green, and blue emitting layers can be in contact with each other or can be spaced apart from each other, or the emitting layer can have a structure in which two or more of the red, green, and blue emitting materials can be mixed together in the layer to emit white light.

[0299] The emission layer may include quantum dots.

[0300] In this embodiment, the quantum dot may be a crystal of a semiconductor compound and may include any material capable of emitting light of various wavelengths depending on the size of the crystal. The quantum dot can emit light of various wavelengths by controlling the elemental proportions in the quantum dot compound.

[0301] The diameter of quantum dots can be, for example, in the range of about 1 nm to about 10 nm.

[0302] Quantum dots can be synthesized through wet chemical processes, metal-organic chemical vapor deposition, molecular beam epitaxy, or similar processes.

[0303] Wet chemistry processes are methods for growing quantum dot crystals by mixing organic solvents and precursor materials. During crystal growth, the organic solvent naturally acts as a dispersant that coordinates to the surface of the quantum dot crystal and controls its growth. This allows for the control of quantum dot particle growth through a process that is easier to perform and less expensive than vapor deposition methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0304] Quantum dots can include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0305] Examples of group II-VI semiconductor compounds may include: binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZ nSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; and any combination thereof.

[0306] Examples of group III-V semiconductor compounds may include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; or quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; and any combination thereof. In embodiments, group III-V semiconductor compounds may also include group II elements. Examples of group III-V semiconductor compounds that also include group II elements may include InZnP, InGaZnP, InAlZnP, etc.

[0307] Examples of III-VI semiconductor compounds may include: binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds such as InGaS3, InGaSe3, etc.; and any combination thereof.

[0308] Examples of group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, AgAlO2, etc.; quaternary compounds such as AgInGaS2, AgInGaSe2, etc.; and any combination thereof.

[0309] Examples of group IV-VI semiconductor compounds may include: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds, such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; and any combination thereof.

[0310] Examples of Group IV elements or compounds may include single-element materials such as Si, Ge, etc.; binary compounds such as SiC, SiGe, etc.; and any combination thereof.

[0311] Each element included in a compound, such as a binary, ternary, or quaternary compound, can exist in the particles at a uniform or non-uniform concentration. The formulas of quantum dot compounds described above can each refer to the type of element included in the compound, where the elemental proportions can vary. For example, AgInGaS2 can indicate AgIn... x Ga 1-x S2 (where x is a real number between 0 and 1).

[0312] In embodiments, quantum dots may have a single structure in which the concentration of each element contained in the respective quantum dot is uniform, or quantum dots may have a core-shell structure. In embodiments where quantum dots have a core-shell structure, the materials contained in the core and the materials contained in the shell may be different from each other.

[0313] The shell of a quantum dot can serve as a protective layer to maintain its semiconductor properties by preventing chemical modification of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the core and shell can have a concentration gradient where the concentration of elements present in the shell decreases towards the core.

[0314] Examples of shells for quantum dots can include metal oxides, quasi-metal oxides, non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal oxides, quasi-metal oxides, or non-metal oxides can include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.; and any combination thereof.

[0315] Examples of semiconductor compounds may include group II-VI, III-V, III-VI, I-III-VI, IV-VI and any combinations thereof as disclosed herein. For example, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS2, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb or any combination thereof.

[0316] Quantum dots can have a full width at half maximum (FWHM) of an emission wavelength spectrum less than or equal to approximately 45 nm. For example, quantum dots can have an FWHM of an emission wavelength spectrum less than or equal to approximately 40 nm. For example, quantum dots can have an FWHM of an emission wavelength spectrum less than or equal to approximately 30 nm. Color purity or color reproducibility can be improved in any of these ranges. Light emitted through these quantum dots can be emitted in all directions, which can improve viewing angle.

[0317] In the embodiments, quantum dots can be in the form of spherical nanoparticles, pyramidal nanoparticles, multi-armed nanoparticles, or cubic nanoparticles, or quantum dots can be in the form of nanotubes, nanowires, nanofibers, nanosheets, etc.

[0318] By adjusting the size of quantum dots, the band gap can be controlled, allowing light of various wavelengths to be obtained from the quantum dot emission layer. Therefore, by using quantum dots of different sizes, light-emitting elements that emit light of different wavelengths can be realized. In embodiments, the size of the quantum dots or the elemental ratio of the quantum dot compound can be adjusted to emit red, green, and / or blue light. Quantum dots can be configured to emit white light by combining various colors of light.

[0319] An emissive layer can be formed by applying an ink composition to a hole transport region and causing one or more portions of the solvent included in the ink composition to evaporate.

[0320] Ink compositions can be applied using methods such as inkjet printing, spin coating, casting, microgravure coating, gravure coating, bar coating, roller coating, wire bar coating, dip coating, spraying, screen printing, flexographic printing, and offset printing.

[0321] In this embodiment, in addition to quantum dots, the emitting layer may also include a host and dopants. Dopants may include phosphorescent dopants, fluorescent dopants, or any combination thereof.

[0322] Based on 100 parts by weight of the host, the amount of dopant in the emitter layer can range from about 0.01 parts by weight to about 15 parts by weight.

[0323] In this embodiment, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may be used as a host or as a dopant in the emission layer.

[0324] The thickness of the emission layer can be approximately up to approximately Within a certain range. For example, the thickness of the emission layer can be approximately... up to approximately Within the aforementioned range, when the thickness of the emitting layer meets any of the aforementioned ranges, excellent light-emitting characteristics can be exhibited without significantly increasing the driving voltage.

[0325] [main body]

[0326] The main body may include a compound represented by formula 301:

[0327] [Formula 301]

[0328] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21

[0329] In Equation 301,

[0330] Ar 301 and L 301 Each can be independently assigned to at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0331] xb11 can be 1, 2, or 3.

[0332] xb1 can be an integer from 0 to 5.

[0333] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, or be accompanied by at least one R. 10a Substituted or unsubstituted C1-C 60 Alkyl group, with at least one R 10a Substituted or unsubstituted C2-C 60 alkenyl, with at least one R 10a Substituted or unsubstituted C2-C 60 Alkyne group, with at least one R10a Substituted or unsubstituted C1-C 60 Alkyl group, by at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, with at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic groups, -Si(Q) 301 (Q) 302 (Q) 303 -N(Q) 301 (Q) 302 -B(Q) 301 (Q) 302 -C(=O)(Q) 301 -S(=O)2(Q) 301 ) or -P(=O)(Q 301 (Q) 302 ),

[0334] xb21 can be an integer from 1 to 5.

[0335] Q 301 To Q 303 Each can be independently identical to the description regarding Q1.

[0336] In an embodiment, in formula 301, when xb11 is 2 or greater, two or more A's r301 They can be connected to each other using a single key.

[0337] In embodiments, the body may include a compound represented by formula 301-1, a compound represented by formula 301-2, or any combination thereof:

[0338] [Formula 301-1]

[0339]

[0340] [Formula 301-2]

[0341]

[0342] In Equations 301-1 and 301-2,

[0343] Ring A 301 To Ring A 304 Each can be independently assigned to at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0344] X301 It can be O, S, N-[(L 304 ) xb4 -R 304 ]、C(R 304 (R) 305 ) or Si(R 304 (R) 305 ),

[0345] xb22 and xb23 can each be 0, 1, or 2 independently.

[0346] L 301 xb1 and R 301 Each can be the same as described in this article.

[0347] L 302 To L 304 They can be independently related to L 301 The same as described.

[0348] xb2 to xb4 can each be independently identical to the description of xb1, and

[0349] R 302 To R 305 and R 311 To R 314 They can be independently related to R. 301 The description is the same.

[0350] In embodiments, the host may include alkaline earth metal complexes, post-transition metal complexes, or any combination thereof. For example, the host may include Be complexes (e.g., compound H55), Mg complexes, Zn complexes, or any combination thereof.

[0351] In the embodiments, the main body may include one of compounds H1 to H128, ADN (9,10-bis(2-naphthyl)anthracene), MADN (2-methyl-9,10-bis(naphthyl-2-yl)anthracene), TBADN (9,10-bis-(2-naphthyl)-2-tert-butyl-anthracene), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), mCP (1,3-bis-9-carbazolylbenzene), TCP (1,3,5-tris(carbazolyl-9-yl)benzene), or any combination thereof:

[0352]

[0353]

[0354]

[0355]

[0356]

[0357]

[0358]

[0359] [Phosphorescent dopant]

[0360] Phosphorescent dopants may include at least one transition metal as the center metal.

[0361] Phosphorescent dopants may include monodentate ligands, dipentate ligands, tridentate ligands, tetradentate ligands, pentadentate ligands, hexadentate ligands, or any combination thereof.

[0362] Phosphorescent dopants can be electrically neutral.

[0363] In this embodiment, the phosphorescent dopant may include an organometallic compound represented by formula 401:

[0364] [Formula 401]

[0365] M(L 401 ) xc1 (L 402 ) xc2

[0366] [Formula 402]

[0367]

[0368] In Equations 401 and 402,

[0369] M can be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)).

[0370] L 401 The ligand can be represented by Equation 402, and xc1 can be 1, 2, or 3, wherein when xc1 is 2 or greater, two or more L... 401 They can be the same as each other or different from each other.

[0371] L 402 It can be an organic ligand, and xc2 can be 0, 1, 2, 3, or 4, wherein when xc2 is 2 or greater, two or more L... 402 They can be the same as each other or different from each other.

[0372] X 401 and X 402 They can be nitrogen or carbon independently.

[0373] Ring A 401 And Ring A 402 Each can be independently designated as C3-C. 60 Carbocyclic or C1-C 60 Heterocyclic group,

[0374] T 401 It can be a single bond, *-O-*', *-S-*', *-C(=O)-*', *-N(Q) 411 )-*'、*-C(Q 411 (Q) 412 )-*'、*-C(Q 411 )=C(Q 412 )-*'、*-C(Q 411 ) = *' or * = C = *',

[0375] X 403 and X 404 They can each be independently chemical bonds (e.g., covalent or coordinate bonds), O, S, N (Q) 413 ), B(Q) 413 ), P(Q 413 ), C(Q 413 (Q) 414 ) or Si(Q 413 (Q) 414 ),

[0376] Q 411 To Q 414 Each can be independently identical to the description regarding Q1.

[0377] R 401 and R 402 Each can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, or be accompanied by at least one R. 10a Substituted or unsubstituted C1-C 20 Alkyl group, with at least one R 10a Substituted or unsubstituted C1-C 20 Alkyl group, by at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, with at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic groups, -Si(Q) 401 (Q) 402 (Q) 403 -N(Q) 401 (Q) 402 -B(Q) 401 (Q) 402 -C(=O)(Q) 401-S(=O)2(Q) 401 ) or -P(=O)(Q 401 (Q) 402 ),

[0378] Q 401 To Q 403 Each can be independently identical to the description regarding Q1.

[0379] xc11 and xc12 can each be an integer from 0 to 10 independently, and

[0380] In Equation 402, * and *' each indicate the binding site with M in Equation 401.

[0381] In the embodiment, in formula 402, X 401 It can be nitrogen and X 402 It can be carbon, or X. 401 and X 402 Each can be nitrogen.

[0382] In the embodiments, in equations 401 and 402, when xc1 is 2 or greater, two or more L 401 The two rings A 401 Optionally via the linking group T 402 Connected to each other, or two rings A 402 Optionally via the linking group T 403 They are interconnected (see compounds PD1 through PD4 and PD7). T 402 and T 403 They can be independently related to T 401 The description is the same.

[0383] In Equation 401, L 402 It can be an organic ligand. For example, L... 402 It may include halogen groups, diketone groups (e.g., acetylacetonate groups), carboxylic acid groups (e.g., pyridine carboxyl ester groups), -C (=O), isonitrile groups, -CN, phosphorus-containing groups (e.g., phosphine groups, phosphite groups, etc.) or any combination thereof.

[0384] In the embodiments, the phosphorescent dopant may include, for example, one of compounds PD1 to PD39 or any combination thereof:

[0385]

[0386]

[0387]

[0388] [Fluorescent dopant]

[0389] Fluorescent dopants may include amine-containing compounds, styrene-containing compounds, or any combination thereof.

[0390] In an embodiment, the fluorescent dopant may include a compound represented by formula 501:

[0391] [Formula 501]

[0392]

[0393] In Equation 501,

[0394] Ar 501 L 501 To L 503 R 501 and R 502 Each can be independently assigned to at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0395] xd1 to xd3 can each be 0, 1, 2 or 3 independently.

[0396] xd4 can be 1, 2, 3, 4, 5, or 6.

[0397] In an embodiment, in formula 501, Ar 501 It may include fused cyclic groups in which three or more monocyclic groups are fused together (e.g., anthracene, etc.). (e.g., pyrene group, etc.)

[0398] In an embodiment, xd4 can be 2 in formula 501.

[0399] In the embodiments, the fluorescent dopant may include one of compounds FD1 to FD37, DPVBi, DPAVBi, or any combination thereof:

[0400]

[0401]

[0402]

[0403]

[0404] [Delayed fluorescence materials]

[0405] In one embodiment, the emission layer may include a delayed fluorescence material.

[0406] In the specification, the delayed fluorescence material may be selected from any compound that can emit delayed fluorescence based on the delayed fluorescence emission mechanism.

[0407] Depending on the type of other materials included in the emission layer, the delayed fluorescence material included in the emission layer can be used as a host or as a dopant.

[0408] According to embodiments, the energy difference between the triplet level (eV) and the singlet level (eV) of the delayed fluorescent material can be in the range of approximately 0 eV to approximately 0.5 eV. When the energy difference between the triplet level (eV) and the singlet level (eV) of the delayed fluorescent material satisfies the range described above, the upconversion from the triplet state to the singlet state of the delayed fluorescent material can be effectively achieved, thereby improving the luminous efficiency of the light-emitting element 1A, etc.

[0409] In embodiments, delayed fluorescence materials may include: materials containing at least one electron donor (e.g., π-electron-rich C3-C). 60 A cyclic group (such as a carbazole group) and at least one electron acceptor (e.g., a sulfoxide group, a cyano group, a nitrogen-containing C1-C group lacking π electrons). 60 Materials containing cyclic groups, etc.; including C8-C 60 Polycyclic materials, the C8-C 60 Polycyclic groups include two or more cyclic groups that are fused together and simultaneously share boron (B); etc.

[0410] In the embodiments, the delayed fluorescence material may include at least one of, for example, compounds DF1 to DF14:

[0411]

[0412]

[0413] [Electron transmission area within intermediate layer 130]

[0414] The electron transport region can have a structure consisting of a single layer made of a single material, a structure consisting of a single layer comprising different materials, or a structure comprising multiple layers containing different materials.

[0415] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0416] In embodiments, the electron transport region may have a multi-layer structure, such as an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, wherein the layers of each structure may be stacked from the emitter layer in the order stated therein, but the structure of the electron transport region is not limited thereto.

[0417] Electron transport regions (e.g., buffer layers, hole blocking layers, electron control layers, or electron transport layers within electron transport regions) may include metal-free compounds comprising at least one π-electron-deficient nitrogen-containing C1-C group. 60 Cyclic base.

[0418] In an embodiment, the electron transport region may include a compound represented by Formula 601.

[0419] [Formula 601]

[0420] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0421] In Equation 601,

[0422] Ar 601 and L 601 Each can be independently assigned to at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group,

[0423] xe11 can be 1, 2, or 3.

[0424] xe1 can be 0, 1, 2, 3, 4, or 5.

[0425] R 601 It can be by at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, with at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601(Q) 602 ),

[0426] Q 601 To Q 603 Each can be independently identical to the description regarding Q1.

[0427] xe21 can be 1, 2, 3, 4, or 5.

[0428] Ar 601 L 601 and R 601 At least one of them can be independently of at least one R. 10a Substituted or unsubstituted nitrogen-containing C1-C electrons lacking π electrons 60 Cyclic base.

[0429] In an embodiment, in formula 601, when xe11 is 2 or greater, two or more Ar 601 They can be connected to each other using a single key.

[0430] In an embodiment, in formula 601, Ar 601 It can be by at least one R 10a Substituted or unsubstituted anthracene group.

[0431] In an embodiment, the electron transport region may include a compound represented by formula 601-1:

[0432] [Formula 601-1]

[0433]

[0434] In Equation 601-1,

[0435] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and X 614 To X 616 At least one of them can be N,

[0436] L 611 To L 613 They can be independently related to L 601 The same as described.

[0437] xe611 to xe613 can each be independently identical to the description concerning xe1.

[0438] R 611 To R 613 They can be independently related to R.601 The description is the same, and

[0439] R 614 To R 616 They can each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkyl group, by at least one R 10a Substituted or unsubstituted C3-C 60 Carbocyclic group, or grouped by at least one R 10a Substituted or unsubstituted C1-C 60 Heterocyclic group.

[0440] In the embodiments, in formulas 601 and 601-1, xe1 and xe611 to xe613 can each be 0, 1 or 2 independently.

[0441] In the embodiments, the electron transport region may include one of compounds ET1 to ET45, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0442]

[0443]

[0444]

[0445] The thickness of the electron transport region can be approximately up to approximately Within a certain range. For example, the thickness of the electron transport region can be approximately... up to approximately Within the range. When the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, hole blocking layer, or electron control layer can each independently be within approximately [a certain range]. up to approximately Within a certain range, and the thickness of the electron transport layer can be approximately... up to approximately Within a certain range. For example, the thickness of the buffer layer, hole blocking layer, or electronic control layer can each be independently within approximately [a certain range]. up to approximately Within a certain range. For example, the thickness of the electron transport layer can be approximately... up to approximately Within the aforementioned range, when the thickness of the buffer layer, hole blocking layer, electronic control layer, electronic transport layer, and / or electronic transport region meets the aforementioned range, satisfactory electronic transport characteristics can be obtained without significantly increasing the driving voltage.

[0446] In addition to the materials described above, the electron transport region (e.g., the electron transport layer in the electron transport region) may also include metallic materials.

[0447] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ion in an alkali metal complex may be Li, Na, K, Rb, or Cs ions, and the metal ion in an alkaline earth metal complex may be Be, Mg, Ca, Sr, or Ba ions. The ligands coordinated to the metal ion in the alkali metal complex or the metal ion in the alkaline earth metal complex may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0448] In embodiments, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1 (Liq) or compound ET-D2:

[0449]

[0450] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may contact (e.g., directly contact) the second electrode 150.

[0451] The electron injection layer can have a structure consisting of a single layer made of a single material, a structure consisting of a single layer comprising different materials, or a structure comprising multiple layers containing different materials.

[0452] The electron-injected layer may include alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof.

[0453] Alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. Alkali earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. Rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0454] Compounds containing alkali metals, compounds containing alkaline earth metals, and compounds containing rare earth metals may include oxides, halides (e.g., fluorides, chlorides, bromides, iodides, etc.), tellurides of alkali metals, alkaline earth metals, and rare earth metals, or any combination thereof.

[0455] Compounds containing alkali metals may include: alkali metal oxides such as Li2O, Cs2O, K2O, etc.; alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, etc.; or any combination thereof. Compounds containing alkaline earth metals may include alkaline earth metal oxides such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1), Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1), etc. Compounds containing rare earth metals may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the compound containing a rare earth metal may include a lanthanide telluride. Examples of lanthanide tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3, etc.

[0456] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include: alkali metal ions, alkaline earth metal ions, or rare earth metal ions as described above; and ligands bonded to the metal ions (e.g., hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof).

[0457] In an embodiment, the electron injection layer may be composed of an alkali metal, an alkaline earth metal, a rare earth metal, a compound containing an alkali metal, a compound containing an alkaline earth metal, a compound containing a rare earth metal, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof as described above. In an embodiment, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).

[0458] According to embodiments, the electron injection layer may be composed of an alkali metal-containing compound (e.g., an alkali metal halide); or the electron injection layer may be composed of an alkali metal-containing compound (e.g., an alkali metal halide) and any combination of alkali metals, alkaline earth metals, rare earth metals, or the like. In embodiments, the electron injection layer may be a KI:Yb co-deposition layer, an RbI:Yb co-deposition layer, a LiF:Yb co-deposition layer, etc.

[0459] When the electron injection layer also includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof may be uniformly or non-uniformly dispersed in the matrix including the organic materials.

[0460] The thickness of the electron injection layer can be approximately up to approximately Within a certain range. For example, the thickness of the electron-injected layer can be approximately... up to approximately Within the aforementioned range, satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage when the thickness of the electron injection layer meets any of the aforementioned ranges.

[0461] [Second electrode 150]

[0462] The second electrode 150 may be disposed on the intermediate layer 130 as described above. The second electrode 150 may be a cathode serving as an electron injection electrode. When the second electrode 150 is a cathode, the material used to form the second electrode 150 may include materials with a low work function, such as metals, alloys, conductive compounds, or any combination thereof.

[0463] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode 150 may be a transmission electrode, a semi-transmissive reflection electrode, or a reflection electrode.

[0464] The second electrode 150 may have a single-layer structure or a multi-layer structure.

[0465] [Capping layer]

[0466] The light-emitting element 1A may include a first capping layer outside the first electrode 110 and / or a second capping layer outside the second electrode 150. In an embodiment, the light-emitting element 1A may have a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are stacked in the order stated herein, or a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in the order stated herein.

[0467] Light generated in the emitting layer of the intermediate layer 130 of the light-emitting element 1A can pass through the first electrode 110, which may be a semi-transparent reflective electrode or a transmissive electrode, and through the first capping layer to the outside. Light generated in the emitting layer of the intermediate layer 130 of the light-emitting element 1A can pass through the second electrode 150, which may be a semi-transparent reflective electrode or a transmissive electrode, and through the second capping layer to the outside.

[0468] The first and second capping layers can each improve the external luminous efficiency through the principle of constructive interference. This increases the light extraction efficiency of the light-emitting element 1A, thereby improving the luminous efficiency of the light-emitting element 1A.

[0469] The first and second capping layers may each comprise a material having a refractive index greater than or equal to approximately 1.6 (relative to a wavelength of approximately 589 nm).

[0470] The first capping layer and the second capping layer can each independently be a capping layer including quantum dots, an organic capping layer including organic materials, an inorganic capping layer including inorganic materials, or an organic-inorganic composite capping layer including both organic and inorganic materials.

[0471] At least one of the first and second capping layers may each independently comprise a carbocyclic compound, a heterocyclic compound, an amino-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthyl phthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, heterocyclic compound, and amino-containing compound may each be optionally substituted with substituents comprising O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. According to an embodiment, at least one of the first and second capping layers may each independently comprise an amino-containing compound.

[0472] In an embodiment, at least one of the first capping layer and the second capping layer may each independently comprise a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0473] According to another embodiment, at least one of the first capping layer and the second capping layer may each independently comprise one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:

[0474]

[0475] [membrane]

[0476] Quantum dots can be included in various films. In embodiments, the film may include quantum dots. For example, the film may be an optical component (or light control mechanism) (e.g., a color filter, a color conversion component, a capping layer, a light extraction efficiency enhancement layer, a selective light absorption layer, a polarizing layer, a layer containing quantum dots, etc.), a light shielding component (e.g., a light reflecting layer, a light absorbing layer, etc.), a protective component (e.g., an insulating layer, a dielectric layer, etc.), etc.

[0477] [Optical components]

[0478] Quantum dots can be used in a variety of optical components. Therefore, according to another embodiment, optical components may include quantum dots.

[0479] According to an embodiment, the optical component may be a light control mechanism.

[0480] According to another embodiment, the optical component may be a color filter, a color conversion component, a capping layer, a light extraction efficiency enhancement layer, a selective light absorption layer, or a polarizing layer.

[0481] Optical components can be color conversion components.

[0482] Color conversion components may include a substrate and a pattern layer formed on the substrate.

[0483] The substrate can be the substrate of the color conversion component itself, or it can be the area in various devices (e.g., display devices) where the color conversion component is disposed. The substrate can be glass, silicon (Si), or silicon oxide (SiO2). x The substrate may be a polyethersulfone (PES) or a polycarbonate (PC).

[0484] The patterned layer may include quantum dots in the form of a thin film. For example, the patterned layer may be quantum dots in the form of a thin film.

[0485] The color conversion component, which includes a substrate and a pattern layer, may also include partition walls or black matrices formed between the pattern layers. In an embodiment, the color conversion component may further include a color filter to further improve light conversion efficiency.

[0486] The color conversion component may include a red patterned layer that emits red light, a green patterned layer that emits green light, a blue patterned layer that emits blue light, or any combination thereof. The red, green, and / or blue patterned layers can be achieved by adjusting the composition, structure, and / or structure of the quantum dots.

[0487] According to another embodiment, a device may include quantum dots (or optical components including quantum dots).

[0488] The device may also include a light source, and quantum dots (or optical components including quantum dots) may be positioned in the path of light emitted from the light source.

[0489] The light source can emit blue, red, green, or white light. For example, the light source can emit blue or red light. In this embodiment, the light emitted from the light source can be absorbed and converted by quantum dots.

[0490] The light source can be an organic light-emitting element (OLED) or a light-emitting element (LED).

[0491] Light emitted from a light source as described above can be converted by quantum dot light as it passes through the quantum dot, and light with a wavelength different from that emitted from the light source can be emitted by the quantum dot.

[0492] For example, quantum dots can absorb and convert light emitted from a light source to emit light with a maximum emission wavelength in the range of approximately 400 nm to approximately 2500 nm.

[0493] [Electronic Devices]

[0494] Quantum dots and light-emitting elements containing quantum dots can be included in various electronic devices. For example, electronic devices that include quantum dots and light-emitting elements containing quantum dots can be light-emitting devices, authentication devices, etc.

[0495] In addition to the light-emitting element, the electronic device (e.g., the light-emitting device) may also include a color filter, a color conversion layer, or both. The color filter and / or color conversion layer may be positioned in at least one direction of travel of the light emitted from the light-emitting element. For example, the light emitted from the light-emitting element may be red, blue, or white light. The light-emitting element may be the same as described above. According to embodiments, the color conversion layer may include quantum dots. For example, the quantum dots may be those disclosed herein.

[0496] An electronic device may include a first substrate. The first substrate may include a plurality of sub-pixels, a color filter may include a plurality of color filter regions corresponding to the plurality of sub-pixels, and a color conversion layer may include a plurality of color conversion regions corresponding to the plurality of sub-pixels.

[0497] A pixel definition layer can be set between multiple subpixels to define each subpixel.

[0498] The color filter may also include a color filter area and a light shielding pattern disposed between the color filter areas, and the color conversion layer may also include a color conversion area and a light shielding pattern disposed between the color conversion areas.

[0499] A color filter region (or color conversion region) may include: a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths from each other. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In embodiments, the color filter region (or color conversion region) may include quantum dots. In embodiments, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots may be the same as those described herein. The first region, the second region, and / or the third region may each further include a scatterer.

[0500] In an embodiment, the light-emitting element can emit first light, and a first region can absorb the first light and emit first-first-color light, a second region can absorb the first light and emit second-first-color light, and a third region can absorb the first light and emit third-first-color light. In an embodiment, the first-first-color light, the second-first-color light, and the third-first-color light can have different maximum emission wavelengths. For example, the first light can be blue light, the first-first-color light can be red light, the second-first-color light can be green light, and the third-first-color light can be blue light.

[0501] In addition to the light-emitting element described above, the electronic device may also include a thin-film transistor. A thin-film transistor may include a source electrode, a drain electrode, and an active layer, and the source electrode or drain electrode may be electrically connected to a first electrode or a second electrode of the light-emitting element.

[0502] Thin-film transistors may also include a gate electrode, a gate insulating layer, etc.

[0503] The active layer may include crystalline silicon, amorphous silicon, organic semiconductors, oxide semiconductors, etc.

[0504] Electronic devices may also include a sealing portion that encapsulates the light-emitting element. The sealing portion may be disposed between the color filter and / or color conversion layer and the light-emitting element. The sealing portion allows light from the light-emitting element to escape to the outside and prevents external air and / or moisture from penetrating into the light-emitting element. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising one or more organic and / or inorganic layers. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0505] Depending on the application of the electronic device, various functional layers may be included on the sealed portion in addition to color filters and / or color conversion layers. Examples of functional layers may include a touchscreen layer, a polarizing layer, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer.

[0506] In addition to the light-emitting elements described above, authentication devices may also include mechanisms for collecting biometric information. For example, an authentication device may be a biometric authentication device that uses biometric information (e.g., fingertip, pupil, etc.) to authenticate an individual.

[0507] Electronic devices can be applied to various displays, light sources, lighting equipment, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, video game consoles, medical devices (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasound diagnostic devices, endoscopic display devices), fish finders, various measuring instruments, meters (e.g., instruments for vehicles, airplanes, or ships), projectors, etc.

[0508] [Electronic Devices]

[0509] Quantum dots and light-emitting elements containing quantum dots can be included in various electronic devices.

[0510] For example, electronic devices that include light-emitting elements can be flat panel displays, flexible displays, computer monitors, medical monitors, televisions, billboards, indoor lights, outdoor lights, signal lights, head-up displays, fully transparent displays, partially transparent displays, flexible displays (such as rollable displays, foldable displays, or stretchable displays), laser printers, telephones (such as mobile phones or tablet phones), tablet computers, personal digital assistants (PDAs), wearable devices, laptop computers, digital cameras, camcorders, viewfinders, microdisplays, three-dimensional (3D) displays, virtual reality displays, augmented reality displays, vehicles, video walls with multiple displays spliced ​​together, theater screens, stadium screens, light therapy devices, or bulletin boards.

[0511] Because light-emitting elements have excellent luminous efficiency and long lifespan, electronic devices that include light-emitting elements can have characteristics such as high brightness, high resolution, and low power consumption.

[0512] [ Figure 4 [Description]

[0513] Figure 4 According to the embodiment, it includes a light-emitting element 1A (see...) Figure 3 A schematic perspective view of the electronic device 1.

[0514] The electronic device 1, which can be a device for displaying moving or still images, can be not only a portable electronic device (such as a mobile phone, smartphone, tablet computer, mobile communication terminal, electronic notebook, e-book, portable multimedia player (PMP), navigation device, ultra-mobile personal computer (UMPC)) or other portable electronic devices, but also a variety of products (such as televisions, laptop computers, monitors, billboards or Internet of Things (IoT) etc.) or parts thereof.

[0515] In this embodiment, electronic device 1 may be a wearable device or part of a wearable device, such as a smartwatch, watch phone, glasses display, or head-mounted display (HMD). However, the embodiments are not limited thereto.

[0516] In embodiments, examples of electronic device 1 may include a vehicle's dashboard, a central information display (CID) located on the vehicle's center console or dashboard, an interior mirror display replacing the vehicle's side mirrors, an entertainment display located on the rear seat of the vehicle or a display located on the back of the front seat of the vehicle, a head-up display (HUD) mounted on the front of the vehicle or projected onto the windshield, or a computer-generated holographic augmented reality head-up display (CGH AR HUD). For ease of illustration, Figure 4 An embodiment of electronic device 1 as a smartphone is shown.

[0517] Electronic device 1 may include a display area DA and a non-display area NDA outside the display area DA. The display device can realize an image by a two-dimensional array of pixels arranged in the display area DA.

[0518] The non-display area NDA can be an area where no image is displayed, and it can surround (e.g., completely surround) the display area DA. Drivers that supply electrical signals or power to multiple pixels located in the display area DA can be located in the non-display area NDA. Pads that are areas that can be electrically connected, such as electronic components or printed circuit boards, can be located in the non-display area NDA.

[0519] Electronic device 1 can have different lengths in the x-axis and y-axis directions. For example, as Figure 4 As shown, the length in the x-axis direction can be shorter than the length in the y-axis direction. In another example, the length in the x-axis direction and the length in the y-axis direction can be the same. In yet another example, the length in the x-axis direction can be longer than the length in the y-axis direction.

[0520] [ Figure 5 and Figures 6A to 6C [Description]

[0521] Figure 5 This is a schematic perspective view of the exterior of a vehicle 1000, which is an electronic device including a light-emitting element, according to an embodiment. Figures 6A to 6C Each is a schematic diagram of the interior of a vehicle 1000 according to an embodiment.

[0522] refer to Figure 5 , Figure 6A , Figure 6B and Figure 6C Embodiments of the vehicle 1000 may include various devices for moving objects (such as people, objects, animals, etc.) from a point of origin to a destination. Examples of the vehicle 1000 may include vehicles that travel on roads or tracks, ships that move on oceans or rivers, and aircraft that fly in the sky using the action of air.

[0523] The vehicle 1000 can travel on roads or tracks. The vehicle 1000 can move in selected directions depending on the rotation of at least one wheel. Examples of the vehicle 1000 may include three-wheeled or four-wheeled vehicles, construction machinery, two-wheeled vehicles, motorized equipment, bicycles, and trains traveling on tracks.

[0524] Vehicle 1000 may include a main body with interior and exterior, and a chassis, the chassis being the part excluding the main body from which the mechanical equipment required for drive is mounted. The main body of vehicle 1000 may include a front panel, engine hood, roof panel, rear panel, luggage compartment, and pillars positioned at the boundaries between doors. The chassis of vehicle 1000 may include power generation equipment, power transmission equipment, drive equipment, steering equipment, braking equipment, suspension equipment, transmission equipment, fuel system, front wheels, rear wheels, left wheels, and right wheels, etc.

[0525] The vehicle 1000 may include side window glass 1100, front window glass 1200, side mirrors 1300, instrument cluster 1400, central control instrument panel 1500, passenger seat instrument panel 1600, and display device 2.

[0526] The side window glass 1100 and the front window glass 1200 can be separated by a column disposed between the side window glass 1100 and the front window glass 1200.

[0527] Side window 1100 can be installed on the side of vehicle 1000. In an embodiment, side window 1100 can be installed on a door of vehicle 1000. Multiple side window 1100s can be provided, and the multiple side window 1100s can face each other. In an embodiment, side window 1100 can include a first side window 1110 and a second side window 1120. In an embodiment, the first side window 1110 can be arranged adjacent to instrument cluster 1400, and the second side window 1120 can be arranged adjacent to passenger seat dashboard 1600.

[0528] In this embodiment, the side window glass 1100 may be spaced apart from each other in the x-axis direction or the -x-axis direction. For example, the first side window glass 1110 and the second side window glass 1120 may be spaced apart from each other in the x-axis direction or the -x-axis direction. For example, the virtual straight line L connecting the side window glass 1100 may extend in the x-axis direction or the -x-axis direction. For example, the virtual straight line L connecting the first side window glass 1110 and the second side window glass 1120 may extend in the x-axis direction or the -x-axis direction.

[0529] The front windshield 1200 can be installed at the front of the vehicle 1000. The front windshield 1200 can be positioned between the side windows 1100 that face each other.

[0530] The side mirror 1300 can provide a rear view of the vehicle 1000. The side mirror 1300 can be mounted on the exterior of the main body of the vehicle 1000. In an embodiment, multiple side mirrors 1300 may be provided. For example, one of the multiple side mirrors 1300 may be located outside the first side window 1110, and another of the multiple side mirrors 1300 may be located outside the second side window 1120.

[0531] The instrument cluster 1400 may be located in front of the steering wheel. The instrument cluster 1400 may include a tachometer, speedometer, coolant temperature gauge, fuel gauge, turn signal indicator, high beam indicator, warning lights, seat belt warning light, odometer, trip meter, automatic transmission selector indicator, door open warning light, engine oil warning light and / or low fuel warning light.

[0532] The central instrument panel 1500 may include a control panel with buttons for adjusting audio equipment, air conditioning equipment, and seat heaters. The central instrument panel 1500 may be located on the side of the instrument cluster 1400.

[0533] The passenger seat instrument panel 1600 may be spaced apart from the instrument cluster 1400, and the central control instrument panel 1500 may be located between the instrument cluster 1400 and the passenger seat instrument panel 1600. In an embodiment, the instrument cluster 1400 may correspond to a driver's seat (not shown), and the passenger seat instrument panel 1600 may correspond to a passenger seat (not shown). In an embodiment, the instrument cluster 1400 may be adjacent to a first side window 1110, and the passenger seat instrument panel 1600 may be adjacent to a second side window 1120.

[0534] In one embodiment, the display device 2 may include a display panel 3, which can display images. The display device 2 may be disposed inside the vehicle 1000. In another embodiment, the display device 2 may be disposed between side windows 1100 facing each other. The display device 2 may be disposed on at least one of the instrument cluster 1400, the central control instrument panel 1500, and the passenger seat instrument panel 1600.

[0535] Display device 2 may include organic light-emitting display devices, inorganic light-emitting display devices, quantum dot display devices, etc. Hereinafter, as an example of display device 2, an organic light-emitting display device including a light-emitting element according to an embodiment will be described. However, various types of display devices as described above may be used in embodiments.

[0536] refer to Figure 6A The display device 2 can be installed on the central control instrument panel 1500. In one embodiment, the display device 2 can display navigation information. In another embodiment, the display device 2 can display information about audio settings, video settings, or vehicle settings.

[0537] refer to Figure 6B The display device 2 can be mounted on the instrument cluster 1400. In this embodiment, the instrument cluster 1400 can display driving information, etc., via the display device 2. For example, the instrument cluster 1400 can digitally display driving information, etc. The instrument cluster 1400 can digitally display vehicle information and driving information as images. For example, the tachometer pointer and gauges, as well as various warning lights or icons, can be displayed using digital signals.

[0538] refer to Figure 6CThe display device 2 can be disposed in / on the passenger seat instrument panel 1600. The display device 2 can be embedded in or located on the passenger seat instrument panel 1600. In one embodiment, the display device 2 disposed on the passenger seat instrument panel 1600 can display images related to the information displayed in the instrument cluster 1400 and / or the information displayed in the central control instrument panel 1500. In another embodiment, the display device 2 disposed in / on the passenger seat instrument panel 1600 can display information different from the information displayed in the instrument cluster 1400 and / or the information displayed in the central control instrument panel 1500.

[0539] [Preparation Method]

[0540] Layers comprising hole transport regions, layers comprising emission regions, and layers comprising electron transport regions can be formed in selected areas using various methods such as vacuum deposition, spin coating, casting, Langmuir-Blodget (LB), inkjet printing, laser printing, and laser-induced thermal imaging (LITI).

[0541] When a layer comprising a hole transport region, an emitter layer, and a layer comprising an electron transport region are each formed by vacuum deposition, deposition conditions can be selected. For example, depending on the materials included in the layers to be formed and the structure of the layers to be formed, deposition temperatures in the range of approximately 100°C to approximately 500°C, and approximately 10 -8 To about 10 -3 Vacuum levels within Torr's range and approximately / second to approximately Deposition is performed at a deposition rate within the range of / second.

[0542] [Definition of the term]

[0543] In the instruction manual, the term "C3-C" 60 A "carbocyclic group" can be a cyclic group having 3 to 60 carbon atoms, with carbon atoms as the only cyclic atoms, and C1-C 60 Heterocyclic groups can be cyclic groups having 1 to 60 carbon atoms, including at least one heteroatom as a cyclic atom in addition to carbon atoms. (C3-C) 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be monocyclic groups, each consisting of a single ring, or polycyclic groups, in which two or more rings are fused together. For example, C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.

[0544] In the specification, the term "cyclic group" can refer to C3-C 60 Carbocyclic or C1-C 60 Heterocyclic group.

[0545] In the specification, the term "π-electron-rich C3-C" is used. 60 A "cyclic group" can be a cyclic group with 3 to 60 carbon atoms and may not include *-N=*' as the cyclic moiety, and is a nitrogen-containing C1-C group lacking π electrons. 60 The cyclic group can have 1 to 60 carbon atoms and can include a heterocyclic group as a cyclic moiety, such as *-N=*'.

[0546] In an embodiment,

[0547] C3-C 60 The carbocyclic group can be a T1 group or a group in which two or more T1 groups are fused together (e.g., cyclopentadienyl, adamantyl, norbornel, phenyl, pentanenyl, naphthyl, chamomilecycloyl, indaneyl, acenaphthel, phenanthreneyl, anthracite, fluoranyl, benzo[phenanthrene], pyrene, etc.). (e.g., alkyl, perylene, pentylenyl, hepta-enyl, tetraphenyl, fenyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, ovoleyl, indene, fluorenyl, spirodifluorenyl, benzo[fluorenyl], indene[phenanthryl or indene[anthrayl]),

[0548] C1-C 60 The heterocyclic group can be a T2 group, a group in which two or more T2 groups are fused together, or a group in which one or more T2 groups and one or more T1 groups are fused together (e.g., pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzothiophene, dibenzofuranyl, indocarbazole, indolecarbazole, benzofuranocarbazole, benzothiophenecarbazole, benzothiophenecarbazole, benzoindocarbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthothiophene, benzofuranodibenzofuranyl, benzofuranodibenzofuranyl). Thiophene, benzothiophene, dibenzothiophene, pyrazolyl, imidazole, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, benzopyrazolyl, benzimidazolyl, benzooxazolyl, benzoisooxazolyl, benzothiazolyl, benzoisothiazolyl, pyridyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinoline, Phinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cenolinyl, phthalazinyl, naphthidyl, imidazopyridyl, imidazopyrimidyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazoyl, azafluorenyl, azadibenzothiophenyl, azadibenzofuranyl, etc.

[0549] C3-C rich in π electrons 60The cyclic group can be a T1 group, a group in which two or more T1 groups are fused together, a T3 group, a group in which two or more T3 groups are fused together, or a group in which one or more T3 groups and one or more T1 groups are fused together (e.g., C3-C). 60 Carbocyclic, 1H-pyrrole, thiorrole, borocyclopentadienyl, 2H-pyrrole, 3H-pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiorrole, benzothiophene, benzofuranyl, carbazole, dibenzothiorrole, dibenzothiophene, dibenzofuranyl, indole-carbazole, benzofuran-carbazole, benzothiophene-carbazole, benzothiorrole-carbazole, benzoindole-carbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthorrole, benzofuran-dibenzofuranyl, benzofuran-dibenzothiophene, benzothiophene-dibenzothiophene, etc.), and

[0550] Nitrogen-containing C1-C lacking π electrons 60 The cyclic group can be a group in which two or more T4 groups are fused together, a group in which one or more T4 groups and one or more T1 groups are fused together, a group in which one or more T4 groups and one or more T3 groups are fused together, or a group in which one or more T4 groups, one or more T1 groups and one or more T3 groups are fused together (e.g., pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl). Azolyl, benzoisoxazolyl, benzothiazolyl, benzoisothiazolyl, pyridyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrene, terpineyl, phthalazinyl, naphthidyl, imidazopyridyl, imidazopyrimidyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiophene, azadibenzothiophene, azadibenzofuranyl, etc.

[0551] The T1 group can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornane (or bicyclo[2.2.1]heptane)yl, norbornenyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane, or phenyl.

[0552] The T2 group can be furanyl, thiophene, 1H-pyrrolyl, thiophene, borocyclopentadienyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiazolyl, azaboracyclopentadienyl, pyridinyl, pyrimidinyl, pyrazinyl, pyrazinyl, triazinyl, tetraazinyl, pyrrolylalkyl, imidazolyl, dihydropyrrolyl, piperidinyl, tetrahydropyridinyl, dihydropyridinyl, hexahydropyrimidinyl, tetrahydropyrimidinyl, dihydropyrimidinyl, piperazinyl, tetrahydropyrazinyl, dihydropyrazinyl, tetrahydropyrazinyl, or dihydropyrazinyl.

[0553] The T3 group can be furanyl, thiophene, 1H-pyrrole, thiophene, or borocyclopentadienyl, and

[0554] The T4 group can be 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, azirthiolyl, aziboranecyclopentadienyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, or tetraazinyl.

[0555] As used in this article, the terms "cyclic group" and "C3-C" are similar. 60 "Carbocyclic group", "C1-C" 60 Heterocyclic groups, π-electron-rich C3-C 60 "Cyclic groups" and "π-electron-deficient nitrogen-containing C1-C" 60 The term "cyclic group" can refer to a group fused to any cyclic group, monovalent group, or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.) depending on the structure of the formula used. For example, "phenyl" can be benzo[a], phenyl, phenylene, etc., which can be readily understood by those skilled in the art based on the structure of a formula including "phenyl".

[0556] Monovalent C3-C 60 Carbocyclic group or monovalent C1-C 60 Examples of heterocyclic groups can include C3-C 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl, monovalent non-aromatic fused polycyclic and monovalent non-aromatic fused heterocyclic.

[0557] Divalent C3-C 60 Carbocyclic or divalent C1-C 60 Examples of heterocyclic groups can include C3-C 10 Cycloalkylene, C1-C10 Heterocyclic alkyl, C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hybrid aryl, divalent non-aromatic fused polycyclic and divalent non-aromatic fused heterocyclic.

[0558] As used in this article, the term "C1-C" 60 "Alkyl" can be a straight-chain or branched monovalent aliphatic hydrocarbon group having 1 to 60 carbon atoms, and examples of such groups may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isohexyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, tert-decyl, etc. As used herein, the term "C1-C" refers to... 60 "alkylene" can be a group having a C1-C2 bond structure. 60 Divalent groups with the same structure as alkyl groups.

[0559] As used in this article, the term "C2-C" 60 "Alkenyl" can be C2-C 60 The alkyl group includes one or more monovalent hydrocarbon groups with carbon-carbon double bonds at its middle or end, and examples may include vinyl, propenyl, butenyl, etc. As used herein, the term "C2-C" refers to... 60 "Alkenyl" can be related to C2-C 60 Alkenes are divalent groups with the same structure.

[0560] As used in this article, the term "C2-C" 60 "Alkyne group" can be at C2-C 60 The alkyl group includes one or more monovalent hydrocarbon groups with a carbon-carbon triple bond at its middle or end, and examples may include ethynyl, propynyl, etc. As used herein, the term "C2-C" refers to... 60 "Iso-ynyl" can be related to C2-C 60 Alkynes are divalent groups with the same structure.

[0561] As used in this article, the term "C1-C" 60 "Alkoxy" can be a compound with the formula -O(A 101 (where A) 101 It can be C1-C 60 The monovalent group of alkyl groups, and examples of such groups may include methoxy, ethoxy, isopropoxy, etc.

[0562] As used in this article, the term "C3-C" 10 "Cycloalkyl" can be a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples of it can include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornel (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, bicyclo[2.2.2]octyl, etc. As used herein, the term "C3-C" is used in this context. 10 "Cycloalkylene" can be C3-C 10 Cycloalkyl groups have the same divalent structure.

[0563] As used in this article, the term "C1-C" 10 "Heterocyclic alkyl" can be a monovalent cyclic group having 1 to 10 carbon atoms and including at least one heteroatom as a cyclic atom in addition to the carbon atoms, and examples can include 1,2,3,4-oxatriazolyl, tetrahydrofuranyl, tetrahydrothiopheneyl, etc. As used herein, the term "C1-C" is used in this context. 10 "Heterocyclic alkyl" can be C1-C 10 Heterocyclic alkyl groups have the same divalent structure.

[0564] As used in this article, the term "C3-C" 10 "Cycloalkenyl" can be a monovalent cyclic group having 3 to 10 carbon atoms in its cyclic structure, having at least one carbon-carbon double bond, and not being aromatic, and examples can include cyclopentenyl, cyclohexenyl, cycloheptenyl, etc. As used herein, the term "C3-C" is used in conjunction with other cyclic groups. 10 "Iridylene" can be related to C3-C 10 Cycloalkenyl groups are divalent groups with the same structure.

[0565] As used in this article, the term "C1-C" 10 A "heterocyclic alkenyl" can be a monovalent cyclic group having 1 to 10 carbon atoms, including at least one heteroatom as a cyclic atom in addition to carbon atoms, and possessing at least one double bond within its cyclic structure. C1-C 10 Examples of heterocyclic alkenyl groups may include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, 2,3-dihydrothiopheneyl, etc. As used herein, the term "C1-C" refers to... 10 "Heterocyclic alkenyl" can be related to C1-C 10 Heterocyclic alkenyl groups are divalent groups with the same structure.

[0566] As used in this article, the term "C6-C" 60 "Aryl" can be a monovalent group in a carbocyclic aromatic system having 6 to 60 carbon atoms, and the term "C6-C" is used.60 "Arylene" can be a divalent group in a carbocyclic aromatic system having 6 to 60 carbon atoms. (C6-C) 60 Examples of aryl groups may include phenyl, pentanenyl, naphthyl, chamomilecycloyl, indoleyl, acenaphthel, phenanthreneyl, anthrayl, fluoranyl, benzophenanthreneyl, pyrene, etc. Compounds, perylene, pentylenyl, hepta-enyl, tetraphenyl, fenyl, hexaphenyl, pentaphenyl, rutinyl, benzoyl, ovyl, etc. When C6-C 60 Aryl and C6-C 60 When a aryl group comprises two or more rings, the corresponding two or more rings can fused together.

[0567] As used in this article, the term "C1-C" 60 A "heteroaryl" group can be a monovalent group that includes at least one heteroatom as a cyclic atom in addition to a carbon atom and has a heterocyclic aromatic system with 1 to 60 carbon atoms. The term "C1-C" is also used. 60 "Hypo-heteroaryl" can be a divalent group that includes at least one heteroatom as a cyclic atom in addition to a carbon atom and has a heterocyclic aromatic system with 1 to 60 carbon atoms. C1-C 60 Examples of heteroaryl groups may include pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cyclolinyl, phenanthrolinel, phthalazinyl, and naphthidyl, etc. When C1-C 60 heteroaryl and C1-C 60 When a heteroaryl group comprises two or more rings, the corresponding two or more rings can fused together.

[0568] As used herein, the term "monovalent nonaromatic fused polycyclic group" can be a monovalent group in which two or more rings are fused together, which comprises only carbon atoms (e.g., having 8 to 60 carbon atoms) as cyclic atoms and which, when considered as a whole, has no aromaticity in its molecular structure. Examples of monovalent nonaromatic fused polycyclic groups can include indenyl, fluorenyl, spirodifluorenyl, benzo[a]fluorenyl, indo[a]phenanthryl, indo[a]anthrayl, etc. As used herein, the term "divalent nonaromatic fused polycyclic group" can be a divalent group having the same structure as a monovalent nonaromatic fused polycyclic group.

[0569] As used herein, the term “monovalent nonaromatic fused heterocyclic group” can be a monovalent group in which two or more rings are fused together, including at least one heteroatom as a cyclic atom in addition to carbon atoms (e.g., having 1 to 60 carbon atoms) and which, when considered as a whole, have no aromaticity in its molecular structure. Examples of monovalent non-aromatic fused heteropolycyclic groups may include pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzothiophene, dibenzofuranyl, azacarbazole, azafluorenyl, azadibenzothiophene, azadibenzothiophene, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, isothiazolyl, oxadiazolyl, thiazolyl Benzopyrazolyl, benzimidazoyl, benzoxazolyl, benzothiazoyl, benzoxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazoyl, indolocarbazoyl, benzofuranocarbazoyl, benzothiophenocarbazoyl, benzothiophenocarbazoyl, benzoindolocarbazoyl, benzocarbazoyl, benzonaphthiophenyl, benzonaphthiophenyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl, benzothiophenodibenzothiophenyl, etc. As used herein, the term "divalent nonaromatic fused heteropolycyclic group" can be a divalent group having the same structure as a monovalent nonaromatic fused heteropolycyclic group.

[0570] As used in this article, the term "C6-C" 60 "Aryloxy group" can be composed of -O(A 102 The group represented by ) (where A) 102 It can be C6-C 60 Aryl), and the term "C6-C 60 "Arylthio" can be formed by -S(A 103 The group represented by ) (where A 103 It can be C6-C 60 Aryl).

[0571] As used in this article, the term "C7-C" 60 "Aryl" can be composed of -(A 104 (A) 105 The group represented by ) (where A 104 It can be C1-C 54 Alkylene, and A 105 It can be C6-C 59 (aryl), and as used herein, the term "C2-C 60 "Heteroarylene" can be composed of -(A 106(A) 107 The group represented by ) (where A 106 It can be C1-C 59 Alkylene, and A 107 It can be C1-C 59 (Miscellaneous aromatic compounds).

[0572] In the instruction manual, the term "R" 10a "Could be:

[0573] Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl, cyano, or nitro;

[0574] C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl or C1-C 60 Alkyl groups, each represented by a deuterium group, -F group, -Cl group, -Br group, -I group, hydroxyl group, cyano group, nitro group, or C3-C group. 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 (or any combination thereof) may be substituted or not substituted;

[0575] C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl groups, each unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, C7-C 60 Aryl alkyl, C2-C 60 Heteroaryl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 ) or any combination thereof; or

[0576] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0577] In the instruction manual, Q1, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each of these can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 alkoxy group; or C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Aryl or C2-C 60 Heteroaryl groups, each denoted by a deuterium, -F, cyano, or C1-C group. 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl, or any combination thereof are substituted or not substituted.

[0578] As used herein, a heteroatom can be any atom other than a carbon or hydrogen atom. Examples of heteroatoms can include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0579] Examples of transition metals, as used herein, may include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), and gold (Au).

[0580] As used herein, the term "Ph" refers to phenyl, the term "Me" refers to methyl, the term "Et" refers to ethyl, and the terms "tert-Bu" and "Bu" are used interchangeably. t Each refers to tert-butyl, and the term "OMe" refers to methyl methacrylate (MMA).

[0581] As used herein, the term "biphenyl" can mean "phenyl substituted with a phenyl group". The term "biphenyl" can also refer to a phenyl group having a C6-C... 60 "Aryl" is a "substituted phenyl".

[0582] As used herein, the term "terphenyl" can mean "a phenyl group substituted with a biphenyl group". The term "terphenyl" can also mean a phenyl group with a substituent of C6-C6. 60 Aryl-substituted C6-C 60 "Aryl" is a "substituted phenyl".

[0583] As used herein, unless otherwise defined, the symbols * and *' each refer to a binding site with an adjacent atom in the corresponding formula or part.

[0584] In this specification, the terms "x-axis (x-axis direction)," "y-axis (y-axis direction)," and "z-axis (z-axis direction)" are not limited to the three axes (directions) in an orthogonal coordinate system (e.g., a Cartesian coordinate system), and can be interpreted in a broader sense than the aforementioned three axes in an orthogonal coordinate system. For example, the x-axis, y-axis, and z-axis can describe axes that are orthogonal to each other, or they can describe axes in different directions that are not orthogonal to each other.

[0585] In the following description, the compounds and light-emitting elements according to the embodiments will be described in more detail with reference to examples and comparative examples. In the synthesis examples below, the statement "using B instead of A" can be interpreted as meaning that the molar equivalents of A and B are the same.

[0586] [Examples and Comparison Examples]

[0587] Example: Preparation of CuInGaS2 / ZnS quantum dots

[0588] (Synthesis of CuInGaS2 core)

[0589] In a 300 mL flask, 200 mL of solvent consisting of oleylamine and 1-octadecene (volume ratio = 1:1) was added, followed by the addition of 1.5 mmol of CuBr3, 1.0 mmol of GaBr3, and 4.0 mmol of InBr3. The mixture was stirred at 100 °C for 60 minutes. Then, 5 mmol of a sulfur precursor (S-oleylamine) was added and the reaction was continued for 10 minutes. The temperature was raised to 300 °C over the next 10 minutes, and the reaction was terminated by cooling to room temperature, thus preparing quantum dot cores.

[0590] (Synthesis of ZnS shell)

[0591] (Preparation of sulfur-containing precursors)

[0592] The oleylamine was degassed at 120°C for 1 hour and then cooled to 50°C. Sulfur (S) was added to the oleylamine under a nitrogen atmosphere and stirred thoroughly at 50°C or less to form a sulfur-containing precursor (i.e., sulfur-oleylamine).

[0593] (Synthesis of ZnS shell)

[0594] The synthesized CuInGaS2 cores were diluted in toluene and purified by precipitation with ethanol. The purified CuInGaS2 cores were dispersed in 5 mL of toluene and added to 15 mL of trioctylamine, followed by degassing at 120 °C. Under a nitrogen atmosphere, 1 mmol of thio-oleylamine, maintained at a low temperature (50 °C), was added to the purified CuInGaS2 cores at 75 °C to form a first composition for ZnS shell formation, and the mixture was stirred for 10 min. 0.5 mmol of zinc-oleylamine and 0.5 mmol of trioctylphosphine sulfide were added to the stirred first composition to form a second composition for ZnS shell formation, and the mixture was reacted at 200 °C or higher for 20 min to form the ZnS shell.

[0595] Comparative example: Preparation of CuInGaS2 / ZnS quantum dots

[0596] (Synthesis of CuInGaS2 core)

[0597] In a 300 mL flask, 200 mL of solvent consisting of oleylamine and 1-octadecene (volume ratio = 1:1) was added, followed by the addition of 1.5 mmol of CuBr3, 1.0 mmol of GaBr3, and 4.0 mmol of InBr3. The mixture was stirred at 100 °C for 60 minutes. Then, 5 mmol of a sulfur precursor (S-oleylamine) was added and the reaction was continued for 10 minutes. The temperature was raised to 300 °C over the next 10 minutes, and the reaction was terminated by cooling to room temperature, thus preparing quantum dot cores.

[0598] (Synthesis of ZnS shell)

[0599] The synthesized CuInGaS2 core was diluted in toluene and purified by precipitation with ethanol. The purified CuInGaS2 core was dispersed in 5 mL of toluene and added to 15 mL of trioctylamine, then degassed at 120 °C. 0.5 mmol of zinc oleate and 0.5 mmol of trioctylphosphine sulfide were added to the above composition to form a composition for ZnS shell formation, and reacted at a temperature greater than or equal to 200 °C for 20 min to form a ZnS shell.

[0600] Evaluation Example 1: Evaluation of Quantum Dot Properties

[0601] The maximum emission wavelength, full width at half maximum (FWHM), and quantum yield (QY) of each of the nuclei and quantum dots prepared for the example and comparative examples were evaluated, and the results are shown in Table 1. Figure 7 The PL spectra of the quantum dots in the example and comparative examples are shown. That is, Figure 7 The graphs are of the photoluminescence (PL) spectra of the quantum dots based on the example and comparative examples. Figure 7 This is a graph showing the normalized intensity of the PL spectrum of the quantum dots in the example and comparative examples as a function of wavelength.

[0602] 2.8 mL of toluene and 0.2 mL of quantum dots were dispersed in a quartz cuvette, and the maximum emission wavelength and full width at half maximum (FWHM) were evaluated by analyzing the PL spectra measured using a PL spectrometer and a UV-Vis spectrometer. The quantum yield was evaluated using an absolute quantum efficiency measurement instrument.

[0603] [Table 1]

[0604]

[0605]

[0606] Refer to Table 1 and Figure 7 It has been confirmed that, compared to the quantum dots of the comparative example, the quantum dots according to the example can improve color reproducibility by reducing the full width at half maximum (FWHM) of the PL spectrum by 10% or more. It has also been confirmed that, compared to the quantum dots according to the comparative example, the quantum dots according to the example have superior quantum yield (QY).

[0607] Therefore, since the quantum dots prepared according to the method for preparing quantum dots according to the embodiments can have a narrow full width at half maximum (FWHM) and excellent quantum yield (QY), it is possible to prepare high-quality optical components and electronic devices by incorporating such quantum dots.

[0608] Evaluation Example 2: Evaluation of the lightfastness of quantum dots

[0609] The PL intensity curves were evaluated for each of the multiple quantum dots prepared for the example and comparative examples, and... Figure 8 The results are shown in the image. In other words, Figure 8 The graph shows the lightfastness of quantum dots based on examples and comparative examples. Figure 8 This is a graph showing the PL intensity as a function of excitation power density for example and comparative examples of quantum dots, where, in L... in -L out In the curve, L in It is the excitation power density, and L out PL intensity, excitation power density refers to the energy transfer rate per unit volume or unit area within a specific region, with units of (W / cm²). 2 ).

[0610] refer to Figure 8 It is confirmed that, compared with the quantum dots according to the comparative example, the quantum dots according to the example have high lightfastness by maintaining high PL intensity even at high light levels.

[0611] Evaluation Example 3: Evaluation of the element weight ratio of quantum dots

[0612] For each of the multiple quantum dots prepared in Example 1 and Comparative Example 1, the weight ratio of the elements within the quantum dot was confirmed by inductively coupled plasma (ICP) analysis and is shown in Table 2.

[0613] [Table 2]

[0614]

[0615] Referring to Table 2, it can be confirmed that the weight ratio of the example quantum dots is different from that of the comparative example quantum dots.

[0616] The method for preparing quantum dots according to an embodiment includes reacting the nucleus with a sulfur-containing precursor during the formation of the first shell to stabilize the nucleus, thereby minimizing the change in the atomic ratio of sulfur (S) even during the high-temperature reaction used for shell formation, thus minimizing the increase in the full width at half maximum (FWHM), and therefore enabling the quantum dots to achieve narrow FWHM and excellent quantum yield. High-quality optical components and electronic devices can be provided by using these quantum dots.

[0617] Embodiments have been disclosed herein, and although terminology has been used, it is used and interpreted in a general and descriptive sense only and is not intended to be limiting. In some instances, as will be apparent to those skilled in the art, features, characteristics, and / or elements described in connection with the embodiments may be used alone or in combination with features, characteristics, and / or elements described in connection with other embodiments, unless specifically instructed otherwise. Therefore, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of this disclosure.

Claims

1. A method for preparing quantum dots, wherein, The method includes: Preparation of nuclei including copper, Group III elements, and Group VI elements; and Prepare a first shell covering the core and comprising Group II and Group VI elements, wherein, The preparation of the first shell includes: A first composition for forming the first shell is prepared by mixing the core with a precursor containing a group VI element; and A second composition for preparing the first shell is prepared by adding a precursor containing a group II element to the first composition used to form the first shell.

2. The method according to claim 1, wherein, In the preparation of the first composition for forming the first shell by mixing the core and the group VI element-containing precursor, the core and the group VI element-containing precursor are each mixed at a temperature less than or equal to 100°C.

3. The method according to claim 1, wherein, The method further includes, after preparing the second composition for forming the first shell: The second composition is used to form the first shell.

4. The method according to claim 1, wherein, The group VI elements included in the core include B 1 , The group VI elements included in the first shell include B 2 , The precursor containing group VI elements is a B-containing precursor. 2 Precursor The B-containing 2 Precursors include B 2 and amine compounds, and B 1 and B 2 Each is an independent element of the VI family.

5. The method according to claim 1, wherein, The group III elements are aluminum, gallium, indium, thallium, Or any combination thereof.

6. The method according to claim 1, wherein, The group VI elements are oxygen, sulfur, selenium, tellurium, or any combination thereof.

7. The method according to claim 1, wherein, The group II elements are magnesium, calcium, zinc, cadmium, mercury, or any combination thereof.

8. The method according to claim 1, wherein, The core comprises copper, indium, gallium, and sulfur.

9. The method according to claim 1, wherein, The first shell comprises a group II-VI semiconductor compound, a group III-VI semiconductor compound, a group III-V semiconductor compound, or any combination thereof.

10. The method according to claim 9, wherein, The group II-VI semiconductor compounds are CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, ZnMgO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

11. The method according to claim 9, wherein, The III-VI semiconductor compounds are GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, InGaSe3, or any combination thereof.

12. The method according to claim 9, wherein, The III-V semiconductor compounds are GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof.

13. The method according to claim 1, wherein, The first shell comprises zinc and sulfur.

14. A quantum dot, said quantum dot being prepared by the method according to any one of claims 1 to 13, wherein, Based on a total weight percentage of 100%, the quantum dots comprise: Amounts of copper ranging from 5 wt% to 15 wt%; Amounts of Group III elements ranging from 10 wt% to 20 wt%; Amounts of Group VI elements ranging from 40 wt% to 50 wt%; and Amounts of Group II elements ranging from 25 wt% to 35 wt%.

15. The quantum dot according to claim 14, wherein, The quantum dot emits light with a peak emission wavelength in the range of 500 nm to 650 nm.

16. The quantum dot according to claim 14, wherein, The quantum yield of the quantum dots is in the range of 70% to 98%.

17. The quantum dot according to claim 14, wherein, The full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dot is less than or equal to 55 nm.

18. An optical component, wherein, The optical component includes: The quantum dot according to any one of claims 14 to 17.

19. An electronic device, wherein, The electronic device includes: The quantum dot according to any one of claims 14 to 17.

20. The electronic device according to claim 19, wherein, The electronic device includes: Light source; and A color conversion component is disposed in the path of light emitted from the light source, wherein, The color conversion component includes the quantum dot.

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