Exhaust device, semiconductor process chamber and semiconductor processing equipment

Abstract

The invention provides an exhaust device, a semiconductor process chamber and semiconductor processing equipment. The device comprises a flow guide cavity, the flow guide cavity comprises a first flow guide cavity and a second flow guide cavity, and the first flow guide cavity and the second flow guide cavity are arranged in parallel in the same circumferential direction; the exhaust device further comprises a first air inlet hole, a second air inlet hole and an exhaust hole. Wherein the first air inlet hole is formed in the first flow guide cavity and communicates with the interior of the first flow guide cavity; the second air inlet hole is formed in the second flow guide cavity and communicates with the interior of the second flow guide cavity. The first air inlet hole and the second air inlet hole are communicated with the semiconductor process chamber; the first flow guide cavity and the second flow guide cavity are both communicated with the exhaust hole, and the airflow direction in the first flow guide cavity is opposite to the airflow direction in the second flow guide cavity. According to the scheme, the process uniformity (such as film thickness uniformity) and the process consistency in the wafers and between the wafers can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more specifically, to an exhaust device, a semiconductor process chamber, and semiconductor processing equipment. Background Technology

[0002] With the rapid iteration and upgrading of integrated circuit technology, electronic components are constantly developing towards miniaturization, integration, and high efficiency. This also places higher demands on processes such as deposition and etching, especially as the limitations of three-dimensional structure devices become increasingly apparent. Inlet devices and vacuum exhaust systems are crucial components of semiconductor processing equipment, directly affecting the distribution of the airflow field within the process chamber and the overall process performance.

[0003] For thin film deposition processes, such as plasma-enhanced chemical vapor deposition (PECVD) within chemical vapor deposition (CVD) technology, there are advantages such as low reaction temperature, fast deposition rate, and good film quality. However, many factors affect the quality of PECVD processes, among which the inlet gas flow distribution and exhaust gas uniformity play a crucial role in the deposition rate and film uniformity. Another example is low-pressure chemical vapor deposition (LPCVD), primarily used for depositing SiO / SiN / Poly films.

[0004] In equipment such as PECVD and LPCVD, due to limitations in the hardware layout such as chamber structure and heating base, the exhaust port of the process chamber is usually placed off-center or located on the outer side of the chamber. This results in inconsistent exhaust pressure around the chamber and uneven exhaust airflow, which affects process uniformity (such as film thickness uniformity) and process consistency within and between wafers. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an exhaust device, a semiconductor process chamber and a semiconductor processing equipment, which can improve process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0006] To achieve the purpose of this invention, an exhaust device is provided for use in a semiconductor process chamber, including a flow guiding cavity. The flow guiding cavity includes a first flow guiding cavity and a second flow guiding cavity, which are arranged in parallel along the same circumferential direction.

[0007] The exhaust device further includes a first air inlet, a second air inlet, and an exhaust outlet; wherein, the first air inlet is disposed on the first flow guide cavity and communicates with the interior of the first flow guide cavity; the second air inlet is disposed on the second flow guide cavity and communicates with the interior of the second flow guide cavity; both the first air inlet and the second air inlet are communicated with the semiconductor process chamber;

[0008] Both the first and second guide cavities are connected to the exhaust port, and the airflow direction in the first guide cavity is opposite to the airflow direction in the second guide cavity.

[0009] In some embodiments, both the first guide cavity and the second guide cavity are directly connected to the exhaust port, and the airflow directions are opposite.

[0010] In some embodiments, the first or second flow guide cavity is directly connected to the exhaust port; the first and second flow guide cavities are connected and the airflow directions are opposite.

[0011] In some embodiments, one end of the first guide cavity is an open end and is directly connected to the exhaust port, and the other end of the first guide cavity is a closed end; one end of the second guide cavity is an open end and is directly connected to the exhaust port, and the other end of the second guide cavity is a closed end;

[0012] The opening end of the first guide cavity and the opening end of the second guide cavity are oriented opposite to each other along the circumferential direction, and are located on both sides of the exhaust hole along the circumferential direction.

[0013] In some embodiments, the second flow guiding cavity is located around the first flow guiding cavity;

[0014] The flow guiding cavity is annular, and an arc-shaped isolation wall and two radial isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is vertically arranged to separate the annular cavity formed by the flow guiding cavity to form an inner arc-shaped cavity and an outer arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively.

[0015] One of the radial isolation walls is connected between the first end of the arc-shaped isolation wall and the outer peripheral wall of the annular cavity, so that one end of the outer arc-shaped cavity forms a closed end; the other radial isolation wall is connected between the second end of the arc-shaped isolation wall and the inner peripheral wall of the annular cavity, so that one end of the inner arc-shaped cavity forms a closed end; the ends of the inner arc-shaped cavity and the outer arc-shaped cavity without the radial isolation wall are open ends, and both are directly connected to the exhaust port.

[0016] In some embodiments, the second flow guiding cavity is located below the first flow guiding cavity;

[0017] The flow guiding cavity is annular, and an arc-shaped isolation wall and two vertical isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is horizontally arranged to separate the annular cavity formed by the flow guiding cavity to form an upper arc-shaped cavity and a lower arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively.

[0018] One of the vertical isolation walls is connected between the first end of the arc-shaped isolation wall and the top wall of the annular cavity, so that one end of the upper arc-shaped cavity forms a closed end; the other vertical isolation wall is connected between the second end of the arc-shaped isolation wall and the bottom wall of the annular cavity, so that one end of the lower arc-shaped cavity forms a closed end; the ends of the upper and lower arc-shaped cavities without the vertical isolation walls are open ends, and both are directly connected to the exhaust port.

[0019] In some embodiments, one end of the first guide cavity is an open end and the other end of the first guide cavity is a closed end; one end of the second guide cavity is an open end and the other end of the second guide cavity is a closed end;

[0020] The opening end of the first flow guide cavity and the opening end of the second flow guide cavity have the same orientation along the circumferential direction and are connected; the closed end of the first flow guide cavity and the closed end of the second flow guide cavity have the same orientation along the circumferential direction.

[0021] The first or second flow guide cavity is directly connected to the exhaust port at a position near the closed end.

[0022] In some embodiments, the second flow guiding cavity is located around the first flow guiding cavity;

[0023] The flow guiding cavity is annular, and an arc-shaped isolation wall and two radial isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is vertically arranged to separate the annular cavity formed by the flow guiding cavity to form an inner arc-shaped cavity and an outer arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively.

[0024] One of the radial isolation walls is connected between the first end of the arc-shaped isolation wall and the outer peripheral wall of the annular cavity, so that one end of the outer arc-shaped cavity forms a closed end; the other radial isolation wall is connected between the first end of the arc-shaped isolation wall and the inner peripheral wall of the annular cavity, so that one end of the inner arc-shaped cavity forms a closed end; the ends of the inner arc-shaped cavity and the outer arc-shaped cavity without the radial isolation wall are open ends, and both are located at the second end of the arc-shaped isolation wall;

[0025] The vent is connected to the inner arc-shaped cavity or the outer arc-shaped cavity near the closed end.

[0026] In some embodiments, the second flow guiding cavity is located below the first flow guiding cavity;

[0027] The flow guiding cavity is annular, and an arc-shaped isolation wall and two vertical isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is horizontally arranged to separate the annular cavity formed by the flow guiding cavity to form an upper arc-shaped cavity and a lower arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively.

[0028] One of the vertical isolation walls is connected between the first end of the arc-shaped isolation wall and the top wall of the annular cavity, so that one end of the upper arc-shaped cavity forms a closed end; the other vertical isolation wall is connected between the first end of the arc-shaped isolation wall and the bottom wall of the annular cavity, so that one end of the lower arc-shaped cavity forms a closed end; the ends of the upper and lower arc-shaped cavities without the vertical isolation walls are open ends, and both are located at the second end of the arc-shaped isolation wall;

[0029] The vent is connected to the upper or lower arc-shaped cavity near the closed end.

[0030] In some embodiments, the first air inlet and the second air inlet are both located below the first flow guide cavity and the second flow guide cavity; or,

[0031] Both the first air inlet and the second air inlet are located on the upper side of the first flow guide cavity and the second flow guide cavity.

[0032] In some embodiments, the exhaust port is located on the outer periphery of the first guide cavity and the second guide cavity;

[0033] The first air inlet is located on the upper side or the inner side of the first flow guide cavity; the second air inlet is located on the lower side or the inner side of the second flow guide cavity.

[0034] In some embodiments, the flow guiding cavity further comprises a buffer cavity, which extends along the circumferential direction and is located between the first flow guiding cavity and the second flow guiding cavity.

[0035] In some embodiments, the second flow guiding cavity is located around the first flow guiding cavity;

[0036] The first air inlet is located on the side wall of the first flow guide cavity facing the buffer cavity; the second air inlet is located on the side wall of the second flow guide cavity facing the buffer cavity.

[0037] The exhaust port is located on the lower side of the first guide cavity and / or the second guide cavity.

[0038] In some embodiments, the second flow guiding cavity is located below the first flow guiding cavity;

[0039] The first air inlet is located on the lower wall of the first flow guide cavity facing the buffer cavity; the second air inlet is located on the upper wall of the second flow guide cavity facing the buffer cavity.

[0040] The exhaust port is located on the outer side of the first guide cavity and / or the second guide cavity.

[0041] In some embodiments, a plurality of first air inlets are spaced apart along the circumferential direction, and a plurality of second air inlets are spaced apart along the circumferential direction, with each first air inlet and each second air inlet corresponding to each other.

[0042] In some embodiments, the distribution density of the plurality of first air inlets increases along the circumferential direction and in a direction away from the exhaust port; the distribution density of the plurality of second air inlets increases along the circumferential direction and in a direction away from the exhaust port; and / or,

[0043] The cross-sectional area of ​​the plurality of first air inlets increases along the circumferential direction and in a direction away from the exhaust port; the cross-sectional area of ​​the plurality of second air inlets increases along the circumferential direction and in a direction away from the exhaust port.

[0044] As another technical solution, the present invention also provides a semiconductor process chamber, including a chamber body and the exhaust device provided by the present invention described above;

[0045] The flow guide cavity is coaxially arranged with the chamber body.

[0046] In some embodiments, the chamber body is provided with a base for supporting the wafer; the flow guide cavity is disposed in the chamber body and is located on the periphery or below the base; the exhaust port has its outlet located outside the chamber body.

[0047] In some embodiments, the flow guiding cavity is annular and includes an outer peripheral wall, an inner peripheral wall, a top wall, and a bottom wall;

[0048] The outer peripheral wall and the bottom wall are respectively part of the side wall and bottom wall of the chamber body; the inner peripheral wall is part of the annular wall of the chamber body surrounding the base;

[0049] Both the inner circumferential surface of the outer peripheral wall and the outer circumferential surface of the annular wall are provided with stepped portions, and the outer circumferential edge and inner circumferential edge of the top wall respectively overlap the stepped portions of the outer peripheral wall and the annular wall.

[0050] In some embodiments, the flow guiding cavity is disposed around the outer periphery of the chamber body;

[0051] The chamber body includes an inner cavity and an outer cavity spaced around the inner cavity. The inner cavity has an upper opening and a lower opening. The upper end of the outer cavity is a closed end, and the lower end of the outer cavity is sealed to the lower end of the outer circumferential surface of the inner cavity.

[0052] The flow guiding cavity is sleeved on the outer periphery of the outer cavity, or the inner peripheral wall of the flow guiding cavity is part of the outer cavity.

[0053] As another technical solution, the present invention also provides a semiconductor processing apparatus, including the semiconductor process chamber provided by the present invention.

[0054] The present invention has the following beneficial effects:

[0055] The exhaust device provided by this invention has a first and a second guide cavity in the guide cavity that are both connected to an exhaust port, and the airflow directions are opposite. Since for a single guide cavity, the closer to the exhaust port in the direction of gas flow, the stronger the suction effect on the semiconductor process chamber through each air inlet, using a single guide cavity to exhaust gas from the semiconductor process chamber results in a higher exhaust velocity closer to the exhaust port. However, this invention, by employing a first and a second guide cavity arranged parallel to each other along the same circumferential direction with opposite airflow directions, ensures that the increasing direction of the suction effect of one guide cavity on the semiconductor process chamber is opposite to that of the other guide cavity. This allows the suction effects of the first and second guide cavities on the semiconductor process chamber to compensate for each other, resulting in a more consistent exhaust velocity at different positions along the circumference of the semiconductor process chamber under the combined action of the first and second guide cavities. This improves process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0056] The semiconductor process chamber provided by the present invention can improve process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers by employing the exhaust device provided by the present invention.

[0057] The semiconductor processing equipment provided by the present invention can improve process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers by employing the semiconductor process chamber provided by the present invention. Attached Figure Description

[0058] Figure 1 This is a cross-sectional view of a semiconductor process chamber disclosed in a related technology.

[0059] Figure 2 For along Figure 1 Top sectional view of line AA;

[0060] Figure 3 for Figure 1 A diagram showing the airflow distribution within a semiconductor process chamber.

[0061] Figure 4 for Figure 1 The airflow velocity distribution diagram in the exhaust chamber;

[0062] Figure 5 for Figure 1 A diagram showing the airflow velocity distribution on the wafer surface.

[0063] Figure 6 This is a cross-sectional view of the semiconductor process chamber of a vertical heat treatment apparatus disclosed in related technology 2;

[0064] Figure 7 A longitudinal half-sectional perspective view of the first type of flow guiding cavity of the exhaust device provided in an embodiment of the present invention;

[0065] Figure 8 for Figure 7 The first type of flow channel is applied to a cross-sectional view of a semiconductor process chamber with a base;

[0066] Figure 9 for Figure 7 Top perspective view of the first type of flow guiding cavity;

[0067] Figure 10 This is a top perspective view of the second type of flow guiding cavity of the exhaust device provided in an embodiment of the present invention;

[0068] Figure 11 A transverse half-sectional perspective view of the first type of flow guiding cavity of the exhaust device provided in an embodiment of the present invention;

[0069] Figure 12 A longitudinal half-sectional perspective view of the third type of flow guiding cavity of the exhaust device provided in the embodiment of the present invention;

[0070] Figure 13 for Figure 12 A transverse half-section perspective view of the third type of flow guiding cavity in the middle;

[0071] Figure 14 for Figure 12 A bottom-view transverse cross-sectional view of the third type of flow guide cavity;

[0072] Figure 15 A cross-sectional view of a fourth type of flow guiding cavity of the exhaust device provided in an embodiment of the present invention applied to a semiconductor process chamber provided with a base;

[0073] Figure 16 A cross-sectional view of the fifth type of flow guiding cavity of the exhaust device provided in the embodiments of the present invention applied to a semiconductor process chamber provided with a base;

[0074] Figure 17 for Figure 16 Front perspective view of the semiconductor process chamber in the image;

[0075] Figure 18 For along Figure 17 Bottom sectional view of the middle EE line;

[0076] Figure 19 For along Figure 17 Top sectional view of the middle HH line;

[0077] Figure 20 A cross-sectional view of the sixth type of flow guiding cavity of the exhaust device provided in the embodiments of the present invention applied to a semiconductor process chamber provided with a base;

[0078] Figure 21 for Figure 20 Front perspective view of the semiconductor process chamber in the image;

[0079] Figure 22 For along Figure 21 A bottom-view sectional view of the KK line;

[0080] Figure 23 For along Figure 21 Top sectional view of the NN line;

[0081] Figure 24 for Figure 20 Top perspective view of the sixth type of flow guiding cavity;

[0082] Figure 25 For along Figure 24 Longitudinal sectional view of the PP line;

[0083] Figure 26 For along Figure 24 A longitudinal sectional view of the QQ line;

[0084] Figure 27 for Figure 20 A longitudinal half-section perspective view of a semiconductor process chamber;

[0085] Figure 28 A cross-sectional view of the seventh type of flow guiding cavity of the exhaust device provided in the embodiments of the present invention applied to a semiconductor process chamber provided with a base;

[0086] Figure 29 for Figure 28 A longitudinal half-section perspective view of a semiconductor process chamber;

[0087] Figure 30 for Figure 28 Top view of the top wall;

[0088] Figure 31 for Figure 28 Top perspective view of the seventh type of flow guiding cavity;

[0089] Figure 32 for Figure 28 Top-view transverse half-section view of the seventh type of flow guiding cavity;

[0090] Figure 33 for Figure 28 A longitudinal half-section perspective view of a local chamber body;

[0091] Figure 34 For along Figure 17 Bottom sectional view of the middle FF line;

[0092] Figure 35 For along Figure 17 Top sectional view of the GG line;

[0093] Figure 36 For along Figure 21 Bottom sectional view of the middle LL line;

[0094] Figure 37 For along Figure 21 Top sectional view of the MM line;

[0095] Figure 38 for Figure 28 A three-dimensional perspective view of the seventh type of flow guiding cavity;

[0096] Figure 39 A cross-sectional view of the fourth type of flow guiding cavity of the exhaust device provided in the embodiments of the present invention applied to the semiconductor process chamber of a vertical heat treatment equipment;

[0097] Figure 40 for Figure 39 Front perspective view of the semiconductor process chamber in the image;

[0098] Figure 41 For along Figure 40 Top sectional view of line AA;

[0099] Figure 42 for Figure 41 A three-dimensional view of the structure shown;

[0100] Figure 43 For along Figure 40 Top sectional view of the middle BB line;

[0101] Figure 44 for Figure 43 A three-dimensional view of the structure shown;

[0102] Figure 45 For along Figure 40 Top sectional view of the CC line;

[0103] Figure 46 for Figure 45 A three-dimensional view of the structure shown;

[0104] Figure 47 A cross-sectional view of the fifth type of flow guiding cavity of the exhaust device provided in the embodiments of the present invention applied to the semiconductor process chamber of a vertical heat treatment equipment;

[0105] Figure 48 for Figure 47 Front perspective view of the semiconductor process chamber in the image;

[0106] Figure 49 For along Figure 48 Top sectional view of the DD line;

[0107] Figure 50 for Figure 49 A three-dimensional view of the structure shown;

[0108] Figure 51 For along Figure 48 Top sectional view of the EE line;

[0109] Figure 52 for Figure 51 A three-dimensional view of the structure shown;

[0110] Figure 53 For along Figure 48 Top sectional view of the middle FF line;

[0111] Figure 54 for Figure 53 A three-dimensional view of the structure shown. Detailed Implementation

[0112] To enable those skilled in the art to better understand the technical solutions of the present invention, the exhaust device, semiconductor process chamber, and semiconductor processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0113] Please refer to the following: Figure 1 and Figure 2One related technology discloses a semiconductor process chamber 01, which includes a spray plate 02 for spraying process gases and a heating base 03 below the spray plate 02 for supporting a wafer 04. An exhaust chamber 05 is also provided at the bottom of the semiconductor process chamber 01. The exhaust chamber 05 consists of an annular groove at the bottom of the chamber and a flow guide plate 06 on one side of the groove opening. Three arc-shaped air guide holes 061 are provided on the flow guide plate 06 and are evenly distributed along the circumference of the heating base 03. Each arc-shaped air guide hole 061 connects the semiconductor process chamber 01 to the exhaust chamber 05. The exhaust chamber 05 is connected to an external vacuum pump through an exhaust port 07. Under the pumping action of the vacuum pump, unreacted process gases and reaction byproducts in the semiconductor process chamber 01 enter the exhaust chamber 05 through the arc-shaped air guide holes 061 and are discharged into the vacuum pump through the exhaust port 07.

[0114] However, when the vacuum pump is operating, the air pressure around the exhaust port 07 decreases. Because the airflow is biased towards the side with lower pressure, the gas in the semiconductor process chamber 01 does not enter the exhaust chamber 05 evenly through the arc-shaped air guide holes 061. Instead, more gas enters the exhaust chamber 05 from the arc-shaped air guide holes 061 closest to the exhaust port 07. Figure 3 The diagram shows the airflow distribution in the semiconductor process chamber. Figure 4 The diagram showing the airflow velocity distribution in the exhaust chamber is shown. Figure 5 As shown in the wafer surface airflow velocity distribution diagram, the airflow velocity in the exhaust chamber 05 decreases along the circumference of the exhaust chamber 05 towards the direction away from the exhaust hole 07. The airflow velocity on the wafer surface decreases along the circumference of the wafer towards the direction away from the exhaust hole. This will result in the film deposited on the wafer being thicker on the side closer to the exhaust hole 07 and thinner on the side away from the exhaust hole 07, which will seriously affect the film thickness uniformity and the consistency of the process within the wafer.

[0115] Please see Figure 6Related technology 2 discloses a vertical heat treatment device, which includes an inner tube 102 constituting a process space, an outer tube 101 spaced around the inner tube 102, and a furnace body 100 spaced around the outer tube 101. The inner circumferential surface of the outer tube 101 and the outer circumferential surface of the inner tube 102 form an annular space, and the process space of the inner tube 102 communicates with this annular space through its top opening. The lower ends of the inner tube 102, outer tube 101, and furnace body 100 are all supported and fixed by an exhaust manifold 108. The lower opening of the inner tube 102 is sealed by a sealing door 107 to achieve a seal of the process space. The sealing door 107 is liftable, allowing it to open or seal the lower opening of the inner tube 102, and to transfer a crystal boat 103 (supported by an insulation barrel 104 fixed to the sealing door 107) into or out of the process space. An inlet pipe 106 and an outlet pipe 105 are provided on the exhaust manifold 108. The outlet end of the inlet pipe 106 is located at the bottom of the inner pipe 102 and is used to introduce process gas into the process space. The inlet end of the outlet pipe 105 is located at the bottom of the annular space, and the outlet end of the outlet pipe 105 is used to connect to the vacuum pump. The flow direction of the process gas flowing into the process space from the inlet pipe 106 is as follows: Figure 6 As indicated by the arrows, the process gas diffuses outwards and upwards, flows into the annular space from the top opening of the inner tube 102, then flows downwards and is discharged from the exhaust pipe 105.

[0116] Since the exhaust pipe 105 is located on one side of the annular space, the airflow distribution in the circumferential direction within the process space is uneven due to the suction force of the exhaust pipe 105. This results in differences in the process environment for thin film deposition, which in turn affects the uniformity of the thin film process (e.g., uniformity of film thickness) and the consistency of the process within and between wafers.

[0117] To resolve at least one of the aforementioned technical issues, please refer to the following: Figure 7 and Figure 8 The exhaust device 200 provided in this embodiment of the invention is applied to a semiconductor process chamber 300. This semiconductor process chamber 300 is applied to equipment, such as atomic layer deposition (ALD) equipment and chemical vapor deposition (CVD) equipment, which have a substrate 33 for supporting wafers disposed within the chamber body 31. Specifically, it may include plasma enhanced chemical vapor deposition (PECVD) equipment. When the exhaust device 200 is disposed within the chamber body 31, it can be located around or below the substrate 33, for example... Figure 8 The situation on the periphery of base 33 is shown.

[0118] The exhaust device 200 includes a flow guiding cavity 2, which includes a first flow guiding cavity 21a and a second flow guiding cavity 21b. These two cavities are arranged parallel to each other along the same circumferential direction. Both the first flow guiding cavity 21a and the second flow guiding cavity 21b extend in an arc shape along the circumferential direction, and the central angle corresponding to the arc length of each arc-shaped cavity is less than 360°. The center of this circumferential direction coincides, for example, with the axis of the semiconductor process chamber 300 (or the axis of the base 33). However, in practical applications, depending on specific needs, the center of this circumferential direction can also be eccentrically positioned relative to the axis of the semiconductor process chamber 300 (or the axis of the base 33). Parallel arrangement means that the first flow guiding cavity 21a and the second flow guiding cavity 21b are arranged together, and their extension directions are parallel to each other. The arrangement direction of the first flow guiding cavity 21a and the second flow guiding cavity 21b is, for example, radial along the circumference of the circumference where the flow guiding cavity 21a is located (e.g., the radial direction of the circumference of the circumference of the circumference of the first flow guiding cavity 21a and the second flow guiding cavity 21b). Figures 7 to 10 (As shown), it can be in the vertical direction, or any other direction.

[0119] like Figures 7 to 10 As shown, the exhaust device 200 also includes a first air inlet 22a, a second air inlet 22b, and an exhaust port 231; wherein, the first air inlet 22a is disposed on the first flow guide cavity 21a and communicates with the interior of the first flow guide cavity 21a; the second air inlet 22b is disposed on the second flow guide cavity 21b and communicates with the interior of the second flow guide cavity 21b. It is easily understood that the first air inlet 22a and the second air inlet 22b are respectively disposed on the cavities of the first flow guide cavity 21a and the second flow guide cavity 21b, and respectively communicate with the internal space formed by the two. Both the first air inlet 22a and the second air inlet 22b communicate with the semiconductor process chamber 300 (e.g., the interior of the chamber body 31). Specifically, one end of each of the first air inlet 22a and the second air inlet 22b is used to communicate with the semiconductor process chamber 300 (e.g., the interior of the chamber body 31). Figure 8 The first air inlet 22a and the second air inlet 22b are connected to the interior of the first flow guide cavity 21a and the second flow guide cavity 21b, respectively, for conveying the gas in the semiconductor process chamber 300 to the first flow guide cavity 21a and the second flow guide cavity 21b, respectively. The first flow guide cavity 21a and the second flow guide cavity 21b can be collectively referred to as flow guide cavity 21; the first air inlet 22a and the second air inlet 22b can be collectively referred to as air inlet 22.

[0120] Both the first guide cavity 21a and the second guide cavity 21b are connected to the exhaust port 231, and the airflow direction in the first guide cavity 21a is opposite to the airflow direction in the second guide cavity 21b. In some embodiments, both the first guide cavity 21a and the second guide cavity 21b are directly connected to the exhaust port 231, and the airflow directions are opposite. In other embodiments, either the first guide cavity 21a or the second guide cavity 21b is directly connected to the exhaust port 231, and the first guide cavity 21a and the second guide cavity 21b are connected, and the airflow directions are opposite. Direct connection means that no other guide cavity is provided between the guide cavity 21 and the exhaust port 231, and the gas in the guide cavity 21 can directly flow into the exhaust port 231. Airflow direction refers to the direction in which the gas flowing into the guide cavity 21 from each air inlet 22 flows towards the exhaust port 231, for example... Figure 9 The two opposite airflow directions X1 and X2.

[0121] When both the first guide cavity 21a and the second guide cavity 21b are directly connected to the exhaust port 231, such as Figure 9 As shown, the gas in the first guide cavity 21a and the second guide cavity 21b flows in opposite directions (e.g., Figure 9 The two opposite airflow directions (X1 and X2) flow directly towards the exhaust port 231. In the case where one of the guide chambers 21 is directly connected to the exhaust port 231, and the first guide chamber 21a and the second guide chamber 21b are connected, the airflow... Figure 10 Taking the direct connection between the second guide cavity 21b and the exhaust port 231 as an example, Figure 10 As shown, the gas in the second guide cavity 21b, which is directly connected to the exhaust port 231, flows directly to the exhaust port 231, while the gas in the first guide cavity 21a flows in the opposite direction (e.g., Figure 10 The two opposite airflow directions (Y1 and Y2) flow into the second guide cavity 21b, so as to indirectly flow to the exhaust port 231.

[0122] For a single flow channel 21, the closer to the exhaust port 231 in the direction of gas flow, the stronger the suction effect of each air inlet 22 on the semiconductor process chamber 300. Therefore, when using a single flow channel 21 to discharge gas from the semiconductor process chamber 300, the exhaust velocity of the semiconductor process chamber 300 will be greater closer to the exhaust port 231. However, in this embodiment of the invention, by using a first flow channel 21a and a second flow channel 21b that are parallel to each other and extend along the same circumferential direction, and whose airflow directions are opposite, one of the flow channels 21 can effectively pump gas from the semiconductor process chamber 300. The increasing direction of the evacuation effect of the chamber 300 from weak to strong is opposite to the increasing direction of the evacuation effect of the other guide cavity 21 on the semiconductor process chamber 300 from weak to strong. Thus, the evacuation effects of the first guide cavity 21a and the second guide cavity 21b on the semiconductor process chamber 300 can compensate for each other. Under the combined action of the first guide cavity 21a and the second guide cavity 21b, the exhaust velocity of the semiconductor process chamber 300 at different positions in the circumferential direction tends to be consistent, thereby improving process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0123] Specifically, such as Figure 11 As shown, the flow guiding cavity 2 is generally annular, and is concentrically arranged with the circumference of the first flow guiding cavity 21a and the second flow guiding cavity 21b. The internal space formed by the flow guiding cavity 2 is a closed annular cavity, which is isolated by corresponding isolation wall structures to form the internal space of the first flow guiding cavity 21a and the second flow guiding cavity 21b. That is, the cavity of the first flow guiding cavity 21a and the second flow guiding cavity 21b is at least a part of the solid of the flow guiding cavity 2, and the internal space of the first flow guiding cavity 21a and the second flow guiding cavity 21b is formed by the annular cavity of the flow guiding cavity 2 isolated by the isolation wall structure. The flow guiding cavity 2 is also provided with an exhaust pipe 23. One end of the exhaust pipe 23 is sealed to the flow guiding cavity 2, for example, by being integrally connected or welded, etc., and the other end of the exhaust pipe 23 is used to connect to a vacuum pump. The internal space of the exhaust pipe 23 is the exhaust hole 231 mentioned above, which communicates with at least one of the first flow guiding cavity 21a and the second flow guiding cavity 21b.

[0124] The specific implementation of the flow guiding cavity 2 is described in detail below.

[0125] First Embodiment

[0126] When both the first guide cavity 21a and the second guide cavity 21b are directly connected to the exhaust port 231, such as Figures 7 to 9 , Figure 11As shown, one end of the first guide cavity 21a is an open end and is directly connected to the exhaust port 231, while the other end of the first guide cavity 21a is a closed end; one end of the second guide cavity 21b is an open end and is directly connected to the exhaust port 231, while the other end of the second guide cavity 21b is a closed end; the opening ends of the first guide cavity 21a and the second guide cavity 21b are oriented in opposite directions along the circumferential direction and are located on both sides of the exhaust port 231 along the circumferential direction.

[0127] In one example, the first guide cavity 21a and the second guide cavity 21b are arranged in parallel radially along the circumference of the guide cavity 21. Figures 7 to 9 , Figure 11 As shown, the second guide cavity 21b is located outside the first guide cavity 21a. Both are arc-shaped, with one end closed and the other open. In this case, as... Figure 11 As shown, the flow guiding cavity 2 is annular, and an arc-shaped isolation wall 211 and two radial isolation walls 212 are provided in the flow guiding cavity 2. The arc-shaped isolation wall 211 is vertically arranged, which separates the annular cavity formed by the flow guiding cavity 2 to form an inner arc-shaped cavity and an outer arc-shaped cavity, which are used as the first flow guiding cavity 21a and the second flow guiding cavity 21b, respectively. One radial isolation wall 212 is connected between the first end of the arc-shaped isolation wall 211 and the outer peripheral wall of the annular cavity, so that one end of the outer arc-shaped cavity (i.e., the second flow guiding cavity 21b) forms a closed end. The other radial isolation wall 212 is connected between the second end of the arc-shaped isolation wall 211 and the inner peripheral wall of the annular cavity, so that one end of the inner arc-shaped cavity (i.e., the first flow guiding cavity 21a) forms a closed end. Both the inner and outer arc-shaped cavities have open ends (i.e., open ends) that are directly connected to the exhaust port 231. Specifically, the direct connection can be achieved by having the space between the open and closed ends of the inner arc-shaped cavity and the space between the open and closed ends of the outer arc-shaped cavity in the same location. The exhaust pipe 23, forming the exhaust port 231, is located below the guide cavity 2 and within this space. The open ends of the inner and outer arc-shaped cavities are directly connected to the exhaust port 231 through this space.

[0128] During the exhaust process, under the suction force of the vacuum pump, the gas entering the first guide cavity 21a and the second guide cavity 21b through the first air inlet 22a and the second air inlet 22b respectively is blocked by the two radial isolation walls 212 and cannot flow from their respective closed ends into the exhaust port 231. Instead, it can only flow towards its respective open end along the extension direction of the first guide cavity 21a and the second guide cavity 21b. Since the opening ends of the first guide cavity 21a and the second guide cavity 21b are oriented opposite to each other in the circumferential direction and are located on both sides of the exhaust port 231 in the circumferential direction, this causes the first guide cavity 21a and the second guide cavity 21b to... The gas flow directions in the second guide cavity 21b are opposite, and the pumping effect of both on the semiconductor process chamber 300 increases from weak to strong along their respective gas flow directions. Thus, the pumping effect of the first guide cavity 21a and the second guide cavity 21b on the semiconductor process chamber 300 increases from weak to strong in opposite directions, achieving mutual compensation. This makes the exhaust velocity of the semiconductor process chamber 300 at different positions in the circumferential direction tend to be consistent under the combined action of the first guide cavity 21a and the second guide cavity 21b, thereby improving process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0129] In some embodiments, in order to more effectively achieve mutual compensation of the evacuation effect of the first flow channel 21a and the second flow channel 21b on the semiconductor process chamber 300, there are multiple first air inlets 22a, which are spaced apart along the circumferential direction; there are multiple second air inlets 22b, which are spaced apart along the circumferential direction; and each first air inlet 22a and each second air inlet 22b are arranged opposite to each other in a one-to-one correspondence.

[0130] When the second guide cavity 21b is located outside the first guide cavity 21a, such as Figure 9 and Figure 10As shown, each first air inlet 22a and each second air inlet 22b is arranged radially opposite to the first guide cavity 21a and the second guide cavity 21b, respectively. The circumferential direction of the plurality of first air inlets 22a and the plurality of second air inlets 22b is, for example, concentrically arranged with the circumferential direction of the first guide cavity 21a and the second guide cavity 21b, respectively. By arranging the plurality of first air inlets 22a and the plurality of second air inlets 22b at intervals along the circumferential direction, the suction force at the plurality of first air inlets 22a and the plurality of second air inlets 22b increases progressively along the gas flow direction of the first guide cavity 21a and the second guide cavity 21b, and the increasing directions of the suction force at the first air inlets 22a and the second air inlets 22b are opposite. Furthermore, by arranging each first air inlet 22a and each second air inlet 22b radially opposite to the first guide cavity 21a and the second guide cavity 21b, the suction force increases in a more efficient manner. The radially opposite arrangement of the multiple first air inlets 22a allows for the combination of high-pulse-force air inlets with low-pulse-force air inlets 22b, and vice versa. This achieves suction force compensation, making the compensated suction forces of the first air inlets 22a and second air inlets 22b more consistent in the circumferential direction, further improving the uniformity of exhaust velocity at different positions in the semiconductor process chamber 300. It should be noted that in practical applications, depending on actual needs, the first air inlets 22a and second air inlets 22b can also be arranged in a one-to-one correspondence, staggered radially along the circumference.

[0131] Further, in some embodiments, the distribution density of the plurality of first air inlets 22a is the same along the circumferential direction; the distribution density of the plurality of second air inlets 22b is the same along the circumferential direction; and / or, the cross-sectional area of ​​the plurality of first air inlets 22a is the same along the circumferential direction; and the cross-sectional area of ​​the plurality of second air inlets 22b is the same along the circumferential direction. In other embodiments, in order to make the suction force of the plurality of first air inlets 22a and the suction force of the plurality of second air inlets 22b in the circumferential direction more consistent, the distribution density of the plurality of first air inlets 22a increases along the circumferential direction and in the direction away from the exhaust port 231; the distribution density of the plurality of second air inlets 22b increases along the circumferential direction and in the direction away from the exhaust port 231; and / or, the cross-sectional area of ​​the plurality of first air inlets 22a increases along the circumferential direction and in the direction away from the exhaust port 231; and the cross-sectional area of ​​the plurality of second air inlets 22b increases along the circumferential direction and in the direction away from the exhaust port 231. Specifically, the distribution density and cross-sectional area of ​​the air inlets 22 are related to the magnitude of the suction force; that is, the larger the distribution density and cross-sectional area of ​​the air inlets 22, the greater the suction force; conversely, the smaller the distribution density and cross-sectional area of ​​the air inlets 22, the smaller the suction force. Based on this, by arranging each first air inlet 22a and each second air inlet 22b in a one-to-one correspondence radially opposite to each other along the circumference of the guide cavity 21, the compensated suction force of the first air inlets 22a and the second air inlets 22b in the circumferential direction can be more effectively made to be consistent. Furthermore, in this embodiment, the multiple first air inlets 22a can be distributed in one circle along the circumferential direction, and the multiple second air inlets 22b can be distributed in one circle along the circumferential direction. However, this embodiment is not limited to this; in practical applications, the multiple first air inlets 22a can be distributed in multiple circles along the circumferential direction, and the multiple second air inlets 22b can be distributed in multiple circles along the circumferential direction.

[0132] In some embodiments, such as Figure 7 As shown, each first air inlet 22a and each second air inlet 22b is located above the first flow guide cavity 21a and the second flow guide cavity 21b. Gas in the semiconductor process chamber 300 can enter the first flow guide cavity 21a and the second flow guide cavity 21b from the upper side of the first flow guide cavity 21a and the second flow guide cavity 21b through each first air inlet 22a and each second air inlet 22b, and then be discharged from the exhaust port 231 on the lower side of the first flow guide cavity 21a and the second flow guide cavity 21b.

[0133] In other embodiments, such as Figure 12 and Figure 13As shown, each first air inlet 22a, each second air inlet 22b, and each exhaust port 231 can also be located on the lower side of the first guide cavity 21a and the second guide cavity 21b. The gas in the semiconductor process chamber 300 can enter the first guide cavity 21a and the second guide cavity 21b from the lower side of the first guide cavity 21a and the second guide cavity 21b through each first air inlet 22a and each second air inlet 22b, and then be discharged from the exhaust port 231 on the lower side of the first guide cavity 21a and the second guide cavity 21b.

[0134] It is easy to understand that when the air inlet 22 is located below the corresponding flow guide cavity 21, and the flow guide cavity 2 is installed at the bottom of the semiconductor process chamber 300, a certain gap should be reserved between the bottom of the flow guide cavity 2 and the bottom wall of the semiconductor process chamber 300 to allow gas to enter the bottom of the flow guide cavity 2 and then enter the corresponding flow guide cavity 21 through each air inlet 22. It should be noted that in practical applications, each first air inlet 22a and each second air inlet 22b can be located above the first flow guide cavity 21a and the second flow guide cavity 21b, or below the first flow guide cavity 21a and the second flow guide cavity 21b, or one can be located above and the other below. Furthermore, when the second flow guide cavity 21b is located on the periphery of the first flow guide cavity 21a, the first air inlet 22a can also be located on one side of the inner circumference of the first flow guide cavity 21a.

[0135] In another example, where both the first guide cavity 21a and the second guide cavity 21b are directly connected to the exhaust port 231, and the first guide cavity 21a and the second guide cavity 21b are arranged in parallel in the vertical direction, as shown in the example... Figures 15 to 19 As shown, the second guide cavity 21b is located below the first guide cavity 21a. Both are arc-shaped, with one end closed and the other open. In this case, the guide cavity 2 is annular and includes an arc-shaped isolation wall 213 and two vertical isolation walls 214. The arc-shaped isolation wall 213 is horizontally arranged and separates the annular cavity formed by the guide cavity 2 to form an upper arc-shaped cavity and a lower arc-shaped cavity, which are used as the first guide cavity 21a and the second guide cavity 21b, respectively. One of the vertical isolation walls 214 is connected between the first end of the arc-shaped isolation wall 213 and the top wall of the annular cavity, so that one end of the upper arc-shaped cavity (i.e., the first guide cavity 21a) forms a closed end. The other vertical isolation wall 214 is connected between the second end of the arc-shaped isolation wall 213 and the bottom wall of the annular cavity, so that one end of the lower arc-shaped cavity (i.e., the second guide cavity 21b) forms a closed end. The ends of both the upper and lower arc-shaped cavities without vertical partition walls 214 are open, i.e., open ends, and are directly connected to the vent 231. A specific direct connection method is, for example, the space between the open and closed ends of the upper arc-shaped cavity (e.g., the space between the open and closed ends). Figure 18The space between the dashed box region Z1 and the open and closed ends of the lower arc-shaped cavity (e.g., the space between the open and closed ends of the cavity) Figure 19 In the dashed box area Z2), at the same location, the exhaust pipe 23 constituting the exhaust port 231 is, for example, located on one side of the outer circumference of the guide cavity 2, and located at the position of the interval space. The opening end of the upper arc-shaped cavity and the opening end of the lower arc-shaped cavity are directly connected to the exhaust port 231 through the interval space.

[0136] During the exhaust process, under the suction force of the vacuum pump, the gas entering the first guide cavity 21a and the second guide cavity 21b (i.e., the upper and lower arc-shaped cavities) through the first inlet 22a and the second inlet 22b respectively is blocked by the two vertical isolation walls 214 and cannot flow from their respective closed ends into the exhaust port 231. Instead, it can only flow along the extension direction of the first guide cavity 21a and the second guide cavity 21b toward their respective open ends. Since the opening ends of the first guide cavity 21a and the second guide cavity 21b are oriented opposite to each other in the circumferential direction and are located on both sides of the exhaust port 231 in the circumferential direction, this makes the first... The gas flow directions in the first guide cavity 21a and the second guide cavity 21b are opposite. The evacuation effect of the two evacuation cavities on the semiconductor process chamber 300 increases from weak to strong along their respective gas flow directions. Thus, the evacuation effect of the first guide cavity 21a and the second guide cavity 21b on the semiconductor process chamber 300 increases from weak to strong in opposite directions, achieving mutual compensation. Under the combined action of the first guide cavity 21a and the second guide cavity 21b, the exhaust velocity at different positions in the circumferential direction of the semiconductor process chamber 300 tends to be consistent, thereby improving process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0137] In some embodiments, each first air inlet 22a is located, for example, on the upper side or inner side of the first flow guide cavity 21a; each second air inlet 22b is located, for example, on the lower side or inner side of the second flow guide cavity 21b. Preferably, in order to more effectively achieve mutual compensation between the first flow guide cavity 21a and the second flow guide cavity 21b for the evacuation effect of the semiconductor process chamber 300, such as... Figure 15 As shown, the first air inlet 22a and the second air inlet 22b are located on one side of the inner circumference of the first flow guide cavity 21a and the second flow guide cavity 21b, respectively, and each first air inlet 22a and each second air inlet 22b are arranged opposite each other in the vertical direction.

[0138] The structure and distribution of each first air inlet 22a and each second air inlet 22b can be the same as in the example above, and will not be repeated here.

[0139] Second Embodiment

[0140] When the first guide cavity 21a or the second guide cavity 21b is directly connected to the exhaust port 231, and the first guide cavity 21a and the second guide cavity 21b are connected, such as Figure 10 and Figure 14 As shown, one end of the first guide cavity 21a is an open end, and the other end of the first guide cavity 21a is a closed end; one end of the second guide cavity 21b is an open end, and the other end of the second guide cavity 21b is a closed end; the open end of the first guide cavity 21a and the open end of the second guide cavity 21b have the same orientation along the circumferential direction and are connected; the closed end of the first guide cavity 21a and the closed end of the second guide cavity 21b have the same orientation along the circumferential direction; the first guide cavity 21a or the second guide cavity 21b is directly connected to the exhaust port 231 near the closed end.

[0141] In one example, the first guide cavity 21a and the second guide cavity 21b are arranged in parallel radially along the circumference of the guide cavity 21. Figure 10 and Figure 14 As shown, the second guide cavity 21b is located outside the first guide cavity 21a. Both are arc-shaped, with one end closed and the other open. In this case, as... Figure 14 As shown, the flow guiding cavity 2 is annular, and contains an arc-shaped isolation wall 211 and two radial isolation walls 212. The arc-shaped isolation wall 211 is vertically arranged, separating the annular cavity formed by the flow guiding cavity 2 into an inner arc-shaped cavity and an outer arc-shaped cavity, which serve as the first flow guiding cavity 21a and the second flow guiding cavity 21b, respectively. One radial isolation wall 212 is connected between the first end of the arc-shaped isolation wall 211 and the outer peripheral wall of the annular cavity, so that one end of the outer arc-shaped cavity (i.e., the second flow guiding cavity 21b) forms a closed end. The other radial isolation wall 212 is connected between the first end of the arc-shaped isolation wall 211 and the inner peripheral wall of the annular cavity, so that one end of the inner arc-shaped cavity (i.e., the first flow guiding cavity 21a) forms a closed end. The two radial isolation walls 212 are located at the same end of the arc-shaped isolation wall 211, i.e., they face the same direction. The ends of the inner and outer arc-shaped cavities without radial isolation walls 212 are open, i.e., open ends. The open ends of the inner and outer arc-shaped cavities are located at the second end of the arc-shaped isolation wall 211, i.e., facing the same direction. Furthermore, the vent 231 communicates with either the inner or outer arc-shaped cavity near the closed end. Figure 14 This shows that the exhaust port 231 is connected to the outer arc-shaped cavity near its closed end (i.e., near the radial isolation wall 212). Specifically, the connection is such that the space between the open and closed ends of the inner arc-shaped cavity and the space between the open and closed ends of the outer arc-shaped cavity are at the same location (i.e.,...). Figure 14(The location of the dashed box Z) The opening end of the inner arc-shaped cavity is connected to the opening end of the outer arc-shaped cavity through this gap. The exhaust pipe 23 constituting the exhaust port 231 is, for example, located on the lower side of the guide cavity 2, and the exhaust port 231 is connected to the inner arc-shaped cavity or the outer arc-shaped cavity, and is located near the closed end of the inner arc-shaped cavity or the outer arc-shaped cavity.

[0142] Taking the exhaust port 231 as an example, which is connected to the outer arc-shaped cavity and located near the closed end of the outer arc-shaped cavity, during the exhaust process, under the suction force of the vacuum pump, the gas entering the second guide cavity 21b (i.e., the outer arc-shaped cavity) through each of the second air inlets 22b flows along the extension direction of the second guide cavity 21b and towards the exhaust port 231. That is, the airflow direction of the second guide cavity 21b is towards the closed end (i.e., Figure 10 (in the Y1 direction). Simultaneously, the gas entering the first guide cavity 21a (i.e., the inner arc-shaped cavity) through each first air inlet 22a extends along the extension direction of the first guide cavity 21a and towards its opening end (i.e., Figure 10 The flow (in the Y2 direction) reaches the opening end and then passes through the aforementioned space (i.e., Figure 14 The gas in the first guide cavity 21a flows into the exhaust port 231 indirectly through the second guide cavity 21b, where the dashed box Z is located and the opening end of the second guide cavity 21b is located. Since the opening ends of the first guide cavity 21a and the second guide cavity 21b face the same direction, and their closed ends also face the same direction, and the airflow direction of the second guide cavity 21b flows towards the closed end while the airflow direction of the first guide cavity 21a flows towards the opening end, the gas flow directions in the first guide cavity 21a and the second guide cavity 21b are opposite. The pumping effect of both on the semiconductor process chamber 300 increases from weak to strong along their respective gas flow directions. Thus, the increasing direction of the pumping effect of the first guide cavity 21a and the second guide cavity 21b on the semiconductor process chamber 300 from weak to strong is opposite, achieving mutual compensation. Under the combined action of the first guide cavity 21a and the second guide cavity 21b, the exhaust velocity at different positions in the circumferential direction of the semiconductor process chamber 300 tends to be consistent, thereby improving process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0143] In another example, where the first guide cavity 21a or the second guide cavity 21b is directly connected to the exhaust port 231, and the first guide cavity 21a and the second guide cavity 21b are connected, taking the arrangement of the first guide cavity 21a and the second guide cavity 21b parallel in the vertical direction as an example, such as... Figures 20 to 27As shown, the second guide cavity 21b is located below the first guide cavity 21a. Both are arc-shaped, with one end closed and the other open. In this case, the guide cavity 2 is annular and includes an arc-shaped isolation wall 213 and two vertical isolation walls 214. The arc-shaped isolation wall 213 separates the annular cavity formed by the guide cavity 2 into an upper arc-shaped cavity and a lower arc-shaped cavity, which serve as the first guide cavity 21a and the second guide cavity 21b, respectively. One of the vertical isolation walls 214 is connected between the first end of the arc-shaped isolation wall 213 and the top wall of the annular cavity, so that one end of the upper arc-shaped cavity forms a closed end. The other vertical isolation wall 214 is connected between the first end of the arc-shaped isolation wall 213 and the bottom wall of the annular cavity, so that one end of the lower arc-shaped cavity forms a closed end. The two vertical isolation walls 214 are located at the second end of the arc-shaped isolation wall 213, i.e., they face the same direction. The ends of the upper and lower arc-shaped cavities without the vertical partition wall 214 are open, i.e., open ends. The open ends of the upper and lower arc-shaped cavities are located at the same end of the arc-shaped partition wall 213, i.e., facing the same direction. The vent 231 communicates with the upper or lower arc-shaped cavity near its closed end, for example... Figure 20 , Figure 23 and Figure 25 The diagram shows that the vent 231 communicates with the lower arc-shaped cavity near the closed end. Furthermore, the space between the open end and the closed end of the upper arc-shaped cavity (i.e.,...) Figure 22 and Figure 26 The space between the location of the dashed box Z3 and the opening and closing ends of the lower arc-shaped cavity (i.e., Figure 23 and Figure 26 (The location of the dashed box Z4) is in the same position, and the opening end of the upper arc-shaped cavity and the opening end of the lower arc-shaped cavity are connected through these two space intervals. The exhaust pipe 23 constituting the exhaust port 231 is provided on one side of the outer circumference of the guide cavity 2, and the exhaust port 231 is connected to the upper arc-shaped cavity or the lower arc-shaped cavity, and is located near the closed end (i.e., the vertical isolation wall 214) of the upper arc-shaped cavity or the lower arc-shaped cavity.

[0144] Taking the exhaust port 231 as an example, which is connected to the second guide cavity 21b (i.e., the lower arc-shaped cavity) and located near the closed end of the second guide cavity 21b, during the exhaust process, under the suction force of the vacuum pump, as... Figure 23 As shown, the gas entering the second guide cavity 21b through each second air inlet 22b flows along the extension direction of the second guide cavity 21b and towards the exhaust port 231, that is, the airflow direction of the second guide cavity 21b is towards its closed end (i.e., Figure 23 (in the R2 direction). Also, as... Figure 22As shown, the gas entering the first guide cavity 21a through each first air inlet 22a flows along the extension direction of the first guide cavity 21a and towards its opening end (i.e., Figure 22 In the R1 direction (as described above), after reaching the opening end, the gas flows into the second guide cavity 21b through the two space intervals (the spaces where the dashed boxes Z3 and Z4 are located) and the opening end of the second guide cavity 21b. That is, the gas in the first guide cavity 21a indirectly flows into the exhaust port 231 through the second guide cavity 21b. It is easy to understand that... Figure 22 yes Figure 21 A bottom view along the KK line. Figure 23 yes Figure 21 Top view along the NN line, Figure 22 The R1 direction shown, when viewed from above, is the same as... Figure 23 The directions of R2 shown are opposite, and Figure 22 The spacing at the location of the dashed box Z3 shown, when viewed from above, is similar to... Figure 23 The space between the dashed box Z4 shown is located on the same side of the vertical isolation wall 214 and is connected.

[0145] Since the opening ends of the first guide cavity 21a and the second guide cavity 21b face the same direction, and their closed ends also face the same direction, and the flow direction of the second guide cavity 21b toward its opening end is opposite to that of the first guide cavity 21a toward its opening end, the pumping effect of the first guide cavity 21a and the second guide cavity 21b on the semiconductor process chamber 300 increases from weak to strong along their respective gas flow directions. Thus, the increasing direction of the pumping effect of the first guide cavity 21a and the second guide cavity 21b on the semiconductor process chamber 300 from weak to strong is opposite, achieving mutual compensation. Under the combined action of the first guide cavity 21a and the second guide cavity 21b, the exhaust velocity of the semiconductor process chamber 300 at different positions in the circumferential direction tends to be consistent, thereby improving process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0146] The other structures and functions of the second embodiment are the same as those of the first embodiment described above, and will not be repeated here.

[0147] Third Embodiment

[0148] The third embodiment is an improvement based on the first and second embodiments described above, namely, as follows: Figure 28 and Figure 29 As shown, the flow guiding cavity 2 also constitutes a buffer cavity 24.

[0149] Specifically, the buffer cavity 24 extends circumferentially and is located between the first guide cavity 21a and the second guide cavity 21b. The buffer cavity 24 is, for example, concentrically arranged with the first guide cavity 21a and the second guide cavity 21b. The buffer cavity 24 is used to connect the semiconductor process chamber 300 (i.e., the interior of the chamber body 31) with the first guide cavity 21a and the second guide cavity 21b, and to allow the gas in the semiconductor process chamber 300 to first enter the buffer cavity 24 and be sufficiently diffused before flowing into the corresponding guide cavity 21 through each air inlet 22. This can more effectively make the suction force of the first air inlet 22a and the second air inlet 22b tend to be consistent in the circumferential direction.

[0150] There are various ways in which the buffer cavity 24 can be connected to the semiconductor process chamber 300 (i.e., the interior of the chamber body 31). In some embodiments, the flow guide cavity 2 is also configured with at least one connecting channel 241. One end of the connecting channel 241 is used to communicate with the semiconductor process chamber 300 (i.e., the interior of the chamber body 31), and the other end of the connecting channel 241 is connected to the buffer cavity 24.

[0151] One end of each first air inlet 22a is connected to the semiconductor process chamber 300 via a buffer cavity 24, and the other end of each first air inlet 22a is connected to the first flow guide cavity 21a. One end of each second air inlet 22b is connected to the semiconductor process chamber 300 via a buffer cavity 24, and the other end of each second air inlet 22b is connected to the second flow guide cavity 21b. Gas in the semiconductor process chamber 300 flows into the buffer cavity 24 via the connecting channel 241, and then flows into the corresponding flow guide cavity 21 via each air inlet 22. Specifically, gas in the buffer cavity 24 flows into the first flow guide cavity 21a via each first air inlet 22a; gas in the buffer cavity 24 flows into the second flow guide cavity 21b via each second air inlet 22b.

[0152] Specifically, based on the first and second embodiments described above, taking the arrangement of the first guide cavity 21a and the second guide cavity 21b in a radially parallel configuration along their respective circumferences as an example, such as... Figure 28 and Figure 29 As shown, the buffer cavity 24 is located around the first guide cavity 21a, and the second guide cavity 21b is located around the buffer cavity 24. In some embodiments, the connecting channel 241 is located on the upper side of the buffer cavity 24. Each first air inlet 22a is located on the sidewall of the first guide cavity 21a facing the buffer cavity 24; each second air inlet 22b is located on the sidewall of the second guide cavity 21b facing the buffer cavity 24; and the exhaust port 231 is located on the lower side of the first guide cavity 21a and / or the second guide cavity 21b that communicate with it.

[0153] Based on this, in some embodiments, in order to improve exhaust efficiency and allow the gas in the semiconductor process chamber 300 to flow more evenly into the buffer chamber 24, such as... Figures 30 to 33 As shown, the buffer cavity 24 and the connecting channel 241 are both arc-shaped, and have the same central angle. Figure 32 As shown, the central angle is the difference between 360° and the included angle α, where included angle α is the central angle between the two ends of the buffer cavity 24 and the connecting channel 241. Furthermore, the two ends of the buffer cavity 24 and the connecting channel 241 can extend to the locations of the two ends of the first guide cavity 21a and the second guide cavity 21b, respectively. That is, the central angle between the two ends of the first guide cavity 21a and the second guide cavity 21b is the same as the central angle between the two ends of the buffer cavity 24 and the connecting channel 241, both equal to included angle α. This allows the two ends of the buffer cavity 24 to extend to the two ends of the first guide cavity 21a and the second guide cavity 21b, respectively, which is beneficial for the uniform flow of gas into the first guide cavity 21a and the second guide cavity 21b. Moreover, the two ends of the connecting channel 241 extending to the two ends of the buffer cavity 24 improve exhaust efficiency and allow the gas in the semiconductor process chamber 300 to flow more uniformly into the buffer cavity 24. Specifically, in the embodiment where an arc-shaped isolation wall 211 and two radial isolation walls 212 are provided in the flow guiding cavity 2, the buffer cavity 24 is formed by an arc-shaped groove provided on the arc-shaped isolation wall 211, and the connecting channel 241 is the upward-facing opening of the arc-shaped groove. The structure of the buffer cavity 24 and the connecting channel 241 is applicable to the case where both the first flow guiding cavity 21a and the second flow guiding cavity 21b are directly connected to the exhaust port 231, and also applicable to the case where either the first flow guiding cavity 21a or the second flow guiding cavity 21b is directly connected to the exhaust port 231, and the first flow guiding cavity 21a and the second flow guiding cavity 21b are connected.

[0154] Based on the first and second embodiments, taking the first guide cavity 21a and the second guide cavity 21b arranged in parallel in the vertical direction as an example, such as... Figure 16 , Figure 20 , Figures 25 to 27 , Figures 34 to 38 As shown, the buffer cavity 24 is located below the first guide cavity 21a, and the second guide cavity 21b is located below the buffer cavity 24. Furthermore, in some embodiments, the connecting channel 241 is located on one side of the inner circumference of the buffer cavity 24. Each first air inlet 22a is located on the lower wall of the first guide cavity 21a facing the buffer cavity 24; each second air inlet 22b is located on the upper wall of the second guide cavity 21b facing the buffer cavity 24; and the exhaust port 231 is located on one side of the outer circumference of the first guide cavity 21a and / or the second guide cavity 21b that communicate with it. Specifically, in embodiments where an arc-shaped isolation wall 213 and two vertical isolation walls 214 are provided in the guide cavity 2, such as... Figure 16 , Figure 17 , Figure 34 and Figure 35As shown, when both the first guide cavity 21a and the second guide cavity 21b are directly connected to the exhaust port 231, the aforementioned buffer cavity 24 is formed by a closed annular groove provided on the arc-shaped isolation wall 213. The connecting channel 241 is the annular opening of this annular groove, which is located on one side of the inner circumference of the buffer cavity 24. The buffer cavity 24 is isolated from the exhaust port 231. Figure 20 , Figure 21 , Figures 36 to 38 As shown, when the first guide cavity 21a or the second guide cavity 21b is directly connected to the exhaust port 231, and the first guide cavity 21a and the second guide cavity 21b are connected, the buffer cavity 24 is formed by a closed annular groove provided on the arc-shaped isolation wall 213, and the connecting channel 241 is the annular groove opening of the annular groove, which is located on one side of the inner circumference of the buffer cavity 24.

[0155] In summary, in the exhaust device 200 provided by the embodiments of the present invention, the first guide cavity 21a and the second guide cavity 21b in the guide cavity 2 are both directly connected to the exhaust port 231, and the airflow directions are opposite; or, the first guide cavity 21a or the second guide cavity 21b is directly connected to the exhaust port 231, and the first guide cavity 21a and the second guide cavity 21b are connected, with their airflow directions being opposite. Since for a single guide cavity 21, the closer it is to the exhaust port 231 in its gas flow direction, the stronger the suction effect on the semiconductor process chamber 300 through each air inlet 22. Therefore, when using a single guide cavity 21 to exhaust gas from the semiconductor process chamber 300, the exhaust velocity of the semiconductor process chamber 300 will be greater closer to the exhaust port 231. However, the present invention, by employing the first guide cavity 21a and the second guide cavity 21b arranged parallel to each other along the same circumferential direction, and with their airflow directions being opposite, can ensure that one of the guide cavities 21 directly affects the semiconductor process chamber 300. The increasing direction of the suction effect of the first flow channel 21a to the semiconductor process chamber 300 is opposite to the increasing direction of the suction effect of the second flow channel 21a to the semiconductor process chamber 300. Thus, the suction effects of the first flow channel 21a and the second flow channel 21b on the semiconductor process chamber 300 can compensate for each other. Under the combined action of the first flow channel 21a and the second flow channel 21b, the exhaust velocity of the semiconductor process chamber 300 at different positions in the circumferential direction tends to be consistent, thereby improving process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers.

[0156] As another technical solution, this embodiment of the invention also provides a semiconductor process chamber 300, which includes a chamber body 31 and the exhaust device 200 provided in this embodiment of the invention; the flow guiding cavity 2 is coaxially arranged with the chamber body 31.

[0157] The aforementioned semiconductor process chamber 300 can be applied, for example, to equipment in which a substrate 33 for supporting a wafer is provided in the chamber body 31, such as a chemical vapor deposition (CVD) equipment, specifically including a plasma-enhanced chemical vapor deposition (PECVD) equipment. The aforementioned semiconductor process chamber 300 can also be applied to vertical heat treatment equipment, specifically including a low-pressure chemical vapor deposition (LPCVD) equipment.

[0158] Taking a semiconductor process chamber 300 as an example, it is applied to a device in which a base 33 for supporting a wafer is provided in the chamber body 31. Figure 8 and Figure 15 As shown, a base 33 for supporting a wafer is provided in the chamber body 31; a flow guiding cavity 2 is disposed in the chamber body 31 and located on the periphery or below the base 33; the exhaust end of the exhaust port 231 is located outside the chamber body 31. By adopting the exhaust device 200 provided in the embodiment of the present invention, the semiconductor process chamber 300 can utilize the mutual compensation effect of the first flow guiding cavity 21a and the second flow guiding cavity 21b on the pumping effect of the semiconductor process chamber 300, so that the pumping force in the circumferential direction of the base 33 in the chamber body 31 tends to be consistent. This can avoid the difference in flow velocity in the circumferential direction of the wafer surface caused by the inconsistent distance between different positions of the base 33 and the exhaust port 231 in the circumferential direction, improve the consistency of the process environment in the circumferential direction of the wafer surface, and thus improve the process uniformity (e.g., film thickness uniformity) and the process uniformity within and between wafers.

[0159] In some embodiments, such as Figure 8 and Figure 15 As shown, the flow guiding cavity 2 can be a separate component for ease of installation and maintenance. In other embodiments, such as Figure 28 and Figure 29 As shown, the flow guiding cavity 2 can also form an integral structure with the chamber body 31 to simplify the equipment structure and improve structural stability. Specifically, the flow guiding cavity 2 includes an outer peripheral wall, an inner peripheral wall, a top wall 316, and a bottom wall; the outer peripheral wall and the bottom wall are respectively part of the side wall 313 and the bottom wall 314 of the chamber body 31; the inner peripheral wall is part of the annular wall 315 of the chamber body 31 surrounding the base 33; as shown... Figure 33As shown, the inner circumferential surface of the outer peripheral wall (i.e., side wall 313) and the outer circumferential surface of the annular wall 315 are both provided with stepped portions (313a, 315a), and the outer circumferential edge and inner circumferential edge of the top wall 316 respectively overlap the stepped portions (313a, 315a) of the outer peripheral wall (i.e., side wall 313) and the annular wall 315.

[0160] In some embodiments, to further improve the uniformity of gas distribution within the semiconductor process chamber 300, such as Figure 8 and Figure 29 As shown, an exhaust grille 34 is also provided around the annular wall 315. The exhaust grille 34 is annular and connects the inner circumferential surface of the chamber body 31 (i.e., the inner circumferential surface of the side wall 313) and the outer circumferential surface of the annular wall 315, separating the chamber body 31 to form an upper sub-cavity 311 and a lower sub-cavity 312. The bearing surface of the base 33 is located in the upper sub-cavity 311, and the guide cavity 2 is located in the lower sub-cavity 312. Furthermore, the exhaust grille 34 has multiple through holes 341 distributed in it, allowing gas in the upper sub-cavity 311 to flow into the lower sub-cavity 312 through each through hole 341. In one example, the multiple through holes 341 can be evenly distributed on the exhaust grille 34 to ensure that gas can be evenly discharged from all sides of the base 33, improving exhaust uniformity.

[0161] Additionally, in a specific embodiment, such as Figure 8 and Figure 29 As shown, a spray plate 32 is provided in the chamber body 31 and on top of the base 33, with multiple spray holes 321 distributed on the spray plate 32. A central air inlet 317 is provided at the center of the top wall of the chamber body 31. The process gas introduced through the central air inlet 317 flows to the wafer surface after passing through each spray hole 321. Optionally, in order to compensate for the difference in gas distribution density in the radial direction of the wafer surface and improve the uniformity of gas distribution on the wafer surface, the spray hole distribution density in the central region of the chamber body 31 is less than that in the edge region.

[0162] Please see Figure 39Taking a semiconductor process chamber 300 as an example, applied to a vertical heat treatment equipment 400, in the exhaust device 200 provided in this embodiment of the invention, a flow guiding cavity 2 is arranged around the outer periphery of the chamber body. Specifically, the chamber body includes an inner cavity 42 and an outer cavity 41 spaced around the inner cavity 42. The inner cavity 42 has an upper opening and a lower opening; the upper end of the outer cavity 41 is a closed end, and the lower end of the outer cavity 41 is sealed to the lower end of the outer peripheral surface of the inner cavity 42, specifically by sealing it to the manifold 44; the flow guiding cavity 2 is sleeved on the outer periphery of the outer cavity 41, or the inner peripheral wall of the flow guiding cavity 2 is part of the outer cavity 41. By employing the exhaust device 200 provided in the embodiments of the present invention, the mutual compensation effect of the first guide cavity 21a and the second guide cavity 21b on the air extraction effect inside the outer cavity 41 can make the suction force on the circumferential direction of the outer cavity 41 more consistent. This can avoid the difference in exhaust flow velocity on the circumferential direction of the outer cavity 41 caused by the inconsistent distance between different positions on the circumferential direction of the outer cavity 41 and the exhaust hole 231, thereby improving the consistency of the process environment on the circumferential direction of the outer cavity 41, and further improving process uniformity (e.g., film thickness uniformity) and process uniformity within and between wafers.

[0163] In a specific embodiment, such as Figures 40 to 46 As shown, the vertical heat treatment equipment 400 includes an inner cavity 42 constituting a process space 421 and an outer cavity 41 spaced apart from the inner cavity 42. Both the inner cavity 42 and the outer cavity 41 are, for example, quartz tubes. The inner circumferential surface of the outer cavity 41 and the outer circumferential surface of the inner cavity 42 form an annular space 411. The process space 421 of the inner cavity 42 communicates with the annular space 411 through its top opening. The lower ends of both the outer cavity 41 and the inner cavity 42 are supported and fixed by manifolds 44. The lower opening of the inner cavity 42 is sealed by a sealing door (not shown) to seal the process space 421. The sealing door is liftable to open or seal the lower opening of the inner cavity 42, and to transfer the crystal boat 43 into or out of the process space 421. An air intake channel 45 is provided on the manifold 44. The outlet end of the air intake channel 45 is located at the bottom of the inner cavity 42 and is used to introduce process gas into the process space 421.

[0164] Based on this, the inner peripheral wall of the flow guiding cavity 2 is part of the outer cavity 41. In this case, the inner peripheral walls of the first flow guiding cavity 21a and the second flow guiding cavity 21b are part of the outer cavity 41. Each first air inlet 22a and each second air inlet 22b are disposed in the outer cavity 41. One end of each first air inlet 22a and each second air inlet 22b is connected to the bottom of the annular space 411, and the other end of each first air inlet 22a and each second air inlet 22b is connected to the first flow guiding cavity 21a and the second flow guiding cavity 21b, respectively. Each first air inlet 22a and each second air inlet 22b is used to transport the gas in the annular space 411 to the first flow guiding cavity 21a and the second flow guiding cavity 21b, respectively. Specifically, the process gas flowing into the process space 421 through the air intake channel 45 diffuses to the surroundings and upwards, and flows into the annular space 411 from the top opening of the inner cavity 42, then flows downwards, and is transported to the first guide cavity 21a and the second guide cavity 21b respectively through the first air intake hole 22a and the second air intake hole 22b.

[0165] In some embodiments, each first air inlet 22a may be distributed in one or more rings around the circumference of the outer cavity 41, and each second air inlet 22b may be distributed in one or more rings around the circumference of the outer cavity 41. The air inlets in each ring may be evenly or non-uniformly distributed around the circumference.

[0166] like Figures 40 to 46 The first guide cavity 21a and the second guide cavity 21b in the guide cavity 2 shown are both directly connected to the exhaust port 231, and the airflow directions are opposite. The structure of the guide cavity 2 is similar to... Figure 15 The structure of the flow guide cavity 2 is similar, except that the structure of the semiconductor process chamber used is different and the position of the installation on the semiconductor process chamber is different, which will not be described in detail here.

[0167] like Figures 47 to 54 The first and second guide chambers 21a and 21b in the guide chamber 2 shown are both directly connected to the exhaust port 231, and the airflow directions are opposite. Furthermore, the guide chamber 2 also includes a buffer chamber 24. In embodiments where the buffer chamber 24 is provided, such as... Figure 51 and Figure 52 As shown, the buffer cavity 24 is, for example, an annular groove formed on the inner circumferential surface of the outer cavity 41. The opening of this annular groove serves as a connecting channel and is located on the inner circumferential surface of the outer cavity 41. The structure of this flow guiding cavity 2 is similar to... Figure 16 and Figure 20 The structure of the flow guide cavity 2 is similar, except that the structure of the semiconductor process chamber used is different and the position of the installation on the semiconductor process chamber is different, which will not be described in detail here.

[0168] When the first guide cavity 21a or the second guide cavity 21b is directly connected to the exhaust port 231, and the first guide cavity 21a and the second guide cavity 21b are connected, this guide cavity 2 is also applicable to the above-mentioned vertical heat treatment equipment 400. Since it has been described in detail in the first and second embodiments above, it will not be repeated here.

[0169] As another technical solution, this embodiment of the invention also provides a semiconductor processing apparatus, including the semiconductor process chamber 300 provided in this embodiment of the invention.

[0170] Semiconductor processing equipment includes, for example, atomic layer deposition (ALD) equipment and chemical vapor deposition (CVD) equipment, specifically plasma-enhanced chemical vapor deposition (PECVD) equipment. Semiconductor processing equipment can also be applied to vertical heat treatment equipment 400, specifically including low-pressure chemical vapor deposition (LPCVD) equipment.

[0171] The semiconductor processing equipment provided in this embodiment of the invention can improve process uniformity (e.g., thin film thickness uniformity) and process consistency within and between wafers by employing the semiconductor process chamber 300 provided in this embodiment of the invention.

[0172] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An exhaust device, applied in a semiconductor process chamber, characterized in that, It includes a flow guiding cavity, which includes a first flow guiding cavity and a second flow guiding cavity, and the first flow guiding cavity and the second flow guiding cavity are arranged in parallel along the same circumferential direction; The exhaust device further includes a first air inlet, a second air inlet, and an exhaust outlet; wherein, the first air inlet is disposed on the first flow guide cavity and communicates with the interior of the first flow guide cavity; the second air inlet is disposed on the second flow guide cavity and communicates with the interior of the second flow guide cavity; both the first air inlet and the second air inlet are communicated with the semiconductor process chamber; Both the first and second guide cavities are connected to the exhaust port, and the airflow direction in the first guide cavity is opposite to the airflow direction in the second guide cavity.

2. The exhaust device according to claim 1, characterized in that, Both the first and second guide cavities are directly connected to the exhaust port, and the airflow directions are opposite.

3. The exhaust device according to claim 1, characterized in that, The first or second flow guide cavity is directly connected to the exhaust port; the first and second flow guide cavities are connected and the airflow directions are opposite.

4. The exhaust device according to claim 2, characterized in that, One end of the first guide cavity is an open end and is directly connected to the exhaust port, while the other end of the first guide cavity is a closed end; one end of the second guide cavity is an open end and is directly connected to the exhaust port, while the other end of the second guide cavity is a closed end. The opening end of the first guide cavity and the opening end of the second guide cavity are oriented opposite to each other along the circumferential direction, and are located on both sides of the exhaust hole along the circumferential direction.

5. The exhaust device according to claim 4, characterized in that, The second flow guiding cavity is located outside the first flow guiding cavity; The flow guiding cavity is annular, and an arc-shaped isolation wall and two radial isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is vertically arranged to separate the annular cavity formed by the flow guiding cavity to form an inner arc-shaped cavity and an outer arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively. One of the radial isolation walls is connected between the first end of the arc-shaped isolation wall and the outer peripheral wall of the annular cavity, so that one end of the outer arc-shaped cavity forms a closed end; the other radial isolation wall is connected between the second end of the arc-shaped isolation wall and the inner peripheral wall of the annular cavity, so that one end of the inner arc-shaped cavity forms a closed end; the ends of the inner arc-shaped cavity and the outer arc-shaped cavity without the radial isolation wall are open ends, and both are directly connected to the exhaust port.

6. The exhaust device according to claim 4, characterized in that, The second flow guide cavity is located below the first flow guide cavity; The flow guiding cavity is annular, and an arc-shaped isolation wall and two vertical isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is horizontally arranged to separate the annular cavity formed by the flow guiding cavity to form an upper arc-shaped cavity and a lower arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively. One of the vertical isolation walls is connected between the first end of the arc-shaped isolation wall and the top wall of the annular cavity, so that one end of the upper arc-shaped cavity forms a closed end; the other vertical isolation wall is connected between the second end of the arc-shaped isolation wall and the bottom wall of the annular cavity, so that one end of the lower arc-shaped cavity forms a closed end; the ends of the upper and lower arc-shaped cavities without the vertical isolation walls are open ends, and both are directly connected to the exhaust port.

7. The exhaust device according to claim 3, characterized in that, One end of the first guide cavity is an open end, and the other end of the first guide cavity is a closed end; one end of the second guide cavity is an open end, and the other end of the second guide cavity is a closed end; The opening end of the first flow guide cavity and the opening end of the second flow guide cavity have the same orientation along the circumferential direction and are connected; the closed end of the first flow guide cavity and the closed end of the second flow guide cavity have the same orientation along the circumferential direction. The first or second flow guide cavity is directly connected to the exhaust port at a position near the closed end.

8. The exhaust device according to claim 7, characterized in that, The second flow guiding cavity is located outside the first flow guiding cavity; The flow guiding cavity is annular, and an arc-shaped isolation wall and two radial isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is vertically arranged to separate the annular cavity formed by the flow guiding cavity to form an inner arc-shaped cavity and an outer arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively. One of the radial isolation walls is connected between the first end of the arc-shaped isolation wall and the outer peripheral wall of the annular cavity, so that one end of the outer arc-shaped cavity forms a closed end; the other radial isolation wall is connected between the first end of the arc-shaped isolation wall and the inner peripheral wall of the annular cavity, so that one end of the inner arc-shaped cavity forms a closed end; the ends of the inner arc-shaped cavity and the outer arc-shaped cavity without the radial isolation wall are open ends, and both are located at the second end of the arc-shaped isolation wall; The vent is connected to the inner arc-shaped cavity or the outer arc-shaped cavity near the closed end.

9. The exhaust device according to claim 7, characterized in that, The second flow guide cavity is located below the first flow guide cavity; The flow guiding cavity is annular, and an arc-shaped isolation wall and two vertical isolation walls are provided in the flow guiding cavity. The arc-shaped isolation wall is horizontally arranged to separate the annular cavity formed by the flow guiding cavity to form an upper arc-shaped cavity and a lower arc-shaped cavity, which are used as the first flow guiding cavity and the second flow guiding cavity, respectively. One of the vertical isolation walls is connected between the first end of the arc-shaped isolation wall and the top wall of the annular cavity, so that one end of the upper arc-shaped cavity forms a closed end; the other vertical isolation wall is connected between the first end of the arc-shaped isolation wall and the bottom wall of the annular cavity, so that one end of the lower arc-shaped cavity forms a closed end; the ends of the upper and lower arc-shaped cavities without the vertical isolation walls are open ends, and both are located at the second end of the arc-shaped isolation wall; The vent is connected to the upper or lower arc-shaped cavity near the closed end.

10. The exhaust device according to claim 5 or 8, characterized in that, Both the first air inlet and the second air inlet are located below the first and second flow guide cavities; or, Both the first air inlet and the second air inlet are located on the upper side of the first flow guide cavity and the second flow guide cavity.

11. The exhaust device according to claim 6 or 9, characterized in that, The exhaust port is located on the outer side of the first guide cavity and the second guide cavity; The first air inlet is located on the upper side or the inner side of the first flow guide cavity; the second air inlet is located on the lower side or the inner side of the second flow guide cavity.

12. The exhaust device according to any one of claims 1-9, characterized in that, The flow guiding cavity also forms a buffer cavity, which extends along the circumferential direction and is located between the first flow guiding cavity and the second flow guiding cavity.

13. The exhaust device according to claim 12, characterized in that, The second flow guiding cavity is located outside the first flow guiding cavity; The first air inlet is located on the side wall of the first flow guide cavity facing the buffer cavity; the second air inlet is located on the side wall of the second flow guide cavity facing the buffer cavity. The exhaust port is located on the lower side of the first guide cavity and / or the second guide cavity.

14. The exhaust device according to claim 12, characterized in that, The second flow guide cavity is located below the first flow guide cavity; The first air inlet is located on the lower wall of the first flow guide cavity facing the buffer cavity; the second air inlet is located on the upper wall of the second flow guide cavity facing the buffer cavity. The exhaust port is located on the outer side of the first guide cavity and / or the second guide cavity.

15. The exhaust device according to any one of claims 1-9, characterized in that, Multiple first air inlets are spaced apart along the circumferential direction, and multiple second air inlets are spaced apart along the circumferential direction, with each first air inlet and each second air inlet corresponding to each other.

16. The exhaust device according to any one of claims 1-9, characterized in that, The distribution density of the plurality of first air intake holes increases along the circumferential direction and in a direction away from the exhaust holes; the distribution density of the plurality of second air intake holes increases along the circumferential direction and in a direction away from the exhaust holes; and / or, The cross-sectional area of ​​the plurality of first air inlets increases along the circumferential direction and in a direction away from the exhaust port; the cross-sectional area of ​​the plurality of second air inlets increases along the circumferential direction and in a direction away from the exhaust port.

17. A semiconductor process chamber, comprising a chamber body, characterized in that, It also includes the exhaust device as described in any one of claims 1-16; The flow guide cavity is coaxially arranged with the chamber body.

18. The semiconductor process chamber according to claim 17, characterized in that, The chamber body is provided with a base for supporting the wafer; the flow guiding cavity is provided in the chamber body and is located on the periphery or below the base; the exhaust port is located outside the chamber body.

19. The semiconductor process chamber according to claim 18, characterized in that, The flow guiding cavity is annular and includes an outer peripheral wall, an inner peripheral wall, a top wall, and a bottom wall; The outer peripheral wall and the bottom wall are respectively part of the side wall and bottom wall of the chamber body; the inner peripheral wall is part of the annular wall of the chamber body surrounding the base; Both the inner circumferential surface of the outer peripheral wall and the outer circumferential surface of the annular wall are provided with stepped portions, and the outer circumferential edge and inner circumferential edge of the top wall respectively overlap the stepped portions of the outer peripheral wall and the annular wall.

20. The semiconductor process chamber according to claim 17, characterized in that, The flow guide cavity is arranged around the outer periphery of the chamber body; The chamber body includes an inner cavity and an outer cavity spaced around the inner cavity. The inner cavity has an upper opening and a lower opening. The upper end of the outer cavity is a closed end, and the lower end of the outer cavity is sealed to the lower end of the outer circumferential surface of the inner cavity. The flow guiding cavity is sleeved on the outer periphery of the outer cavity, or the inner peripheral wall of the flow guiding cavity is part of the outer cavity.

21. A semiconductor processing apparatus, characterized in that, Includes the semiconductor process chamber as described in any one of claims 17-20.

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