Gas distribution assembly for semiconductor film processing equipment and semiconductor film processing equipment

Abstract

The invention provides a gas distribution assembly for semiconductor thin film processing equipment and the semiconductor thin film processing equipment, the gas distribution assembly comprises a separator, and the separator comprises a central part and a plurality of branch parts which are connected to the central part and are distributed at intervals; the branch part is internally provided with a branch gas path, and the branch gas path comprises at least one branch gas inlet located in the gas inlet side of the branch part and a plurality of branch gas outlets located in the gas outlet side of the branch part; the gas outlet side of the branch part comprises a plurality of strip-shaped bulges, the plurality of strip-shaped bulges are distributed at intervals in the circumferential direction of the separator, and the plurality of branch gas outlets are formed in the plurality of strip-shaped bulges, so that a gas curtain with high and low pressure areas distributed in sequence is obtained between adjacent reaction areas, the separation effect between reaction gas and metal source gas is enhanced, and the reaction efficiency is improved. And the film deposition uniformity and the film quality are ensured.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology. Specifically, this application relates to a gas distribution component for a semiconductor thin film processing equipment and a semiconductor thin film processing equipment. Background Technology

[0002] In the semiconductor manufacturing field, the quality of semiconductor thin film deposition processes directly affects chip performance and reliability. Semiconductor thin film deposition processes require the introduction of various reactive gases into a reaction chamber, causing them to undergo chemical reactions on the surface of substrates such as wafers, thereby depositing and forming a thin film. In related technologies, because the reactant gas and the metal source gas are difficult to separate effectively before reaching the substrate surface, the reactant gas and the metal source gas react prematurely in the reaction chamber. This not only generates unnecessary byproducts and pollutes the internal environment of the reaction chamber, but also adheres to the wafer surface to form defects, affecting the uniformity, purity and electrical performance of thin film deposition, thereby reducing the yield of the chip.

[0003] Therefore, how to effectively separate the reactant gases and prevent them from reacting with each other before contacting the substrate surface has become a critical technical problem that the semiconductor manufacturing industry urgently needs to solve. Summary of the Invention

[0004] One objective of this application is to provide a new technical solution for a gas distribution component for a semiconductor thin film processing equipment and for the semiconductor thin film processing equipment itself.

[0005] According to a first aspect of the embodiments of this application, a gas distribution assembly for a semiconductor thin film processing apparatus is provided, comprising: A separator, the separator comprising a central portion and a plurality of branches connected to the central portion and spaced apart; The branch section has a branch air passage, which includes at least one branch air inlet located on the air inlet side of the branch section and multiple branch air outlets located on the air outlet side of the branch section. The branch outlet side includes multiple strip-shaped protrusions, which are spaced apart in the circumferential direction of the separator, and the multiple branch outlets are disposed on the multiple strip-shaped protrusions.

[0006] Optionally, the branch air inlet is located at one end of the branch air inlet side near the center.

[0007] Optionally, the branch air path includes a partition gas buffer chamber disposed within the branch section, and the branch air inlet is connected to the plurality of branch air outlets through the partition gas buffer chamber.

[0008] Optionally, the branch air inlet extends circumferentially along the separator and is connected to the separator air buffer chamber through a plurality of connecting holes.

[0009] Optionally, the central part has a central air passage, which includes at least one central air inlet located on the air inlet side of the central part and a plurality of central air outlets located on the air outlet side of the central part. The multiple central air outlets are arranged in multiple rows and are corresponding to the multiple branch air outlets.

[0010] Optionally, the air outlet side of the branch is flush with the air outlet side of the center.

[0011] Optionally, the branch outlet side protrudes beyond the central outlet side.

[0012] Optionally, the central portion and the plurality of branches form a straight, V-shaped, Y-shaped, or cross-shaped separator.

[0013] According to a second aspect of the embodiments of this application, a semiconductor thin film processing apparatus is provided, the semiconductor thin film processing apparatus including a chamber base, a cover and the gas distribution assembly described in the first aspect; The chamber base has a top opening, and the cover is detachably disposed on the top opening and forms a reaction chamber between the cover and the chamber base. The cover is provided with an installation groove, and the separator is installed in the installation groove.

[0014] Optionally, the semiconductor thin film processing apparatus includes a support unit, which is rotatably disposed in the reaction chamber and used to support the substrate; The central air outlet side forms a recessed area relative to the branch air outlet side, and the supporting part is provided with a boss, which is nested with the recessed area and forms a clearance fit.

[0015] One technical advantage of this application is: This application provides a gas distribution assembly for a semiconductor thin film processing apparatus. The gas distribution assembly includes a separator, which includes a central portion and a plurality of branches connected to and spaced apart from the central portion. Each branch has a branch gas path, which includes at least one branch gas inlet on the inlet side of the branch and a plurality of branch gas outlets on the outlet side of the branch. The outlet side of the branch includes a plurality of strip-shaped protrusions, which are spaced apart in the circumferential direction of the separator. The plurality of branch gas outlets are disposed on the plurality of strip-shaped protrusions to form a gas curtain with high and low pressure zones distributed sequentially between adjacent reaction regions, thereby enhancing the separation effect between the reactant gas and the metal source gas and ensuring the uniformity and quality of thin film deposition.

[0016] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0017] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments of the present application and, together with their description, serve to explain the principles of the present application.

[0018] Figure 1 A three-dimensional gas distribution assembly for a semiconductor thin film processing apparatus is provided as an embodiment of this application. Figure 1 ; Figure 2 A three-dimensional gas distribution assembly for a semiconductor thin film processing apparatus is provided as an embodiment of this application. Figure 2 ; Figure 3 A bottom view of a gas distribution assembly for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 4 for Figure 3 Cross-sectional view at point AA; Figure 5 A top view of a gas distribution assembly for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 6 for Figure 5 Cross-sectional view at point BB; Figure 7 for Figure 5 A magnified view of a portion of the image; Figure 8 A schematic diagram of a chamber base for a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 9 A cross-sectional view of a semiconductor thin film processing apparatus provided in one embodiment of this application; Figure 10 A schematic diagram illustrating the fit between a gas distribution assembly and a cover of a semiconductor thin film processing apparatus according to an embodiment of this application; Figure 11 for Figure 10 Cross-sectional view at point C; Figure 12 for Figure 2 A magnified view of a portion of the image.

[0019] in: 1. Chamber base; 11. Top opening; 2. Cover; 21. Mounting groove; 3. Gas distribution assembly; 31. Separator; 311. Central part; 3111. Central air inlet; 3112. Central air outlet; 312. Branch part; 3121. Branch air inlet; 3122. Branch air outlet; 3123. Strip-shaped protrusion; 3124. Separating air buffer chamber; 3125. Connecting hole; 313. Recessed area; 4. Supporting part; 41. Boss. Detailed Implementation

[0020] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0021] The embodiments of this application will now be described in detail, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0022] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0023] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0024] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0025] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0026] In related technologies, during thin film deposition in semiconductor thin film processing equipment, the reactive gas and the metal source gas are difficult to separate effectively before reaching the substrate surface. This causes the reactive gas and the metal source gas to react prematurely in the reaction chamber, which not only generates unnecessary byproducts and pollutes the internal environment of the reaction chamber, but also adheres to the wafer surface to form defects, affecting the uniformity of thin film deposition.

[0027] This application provides a gas distribution assembly for a semiconductor thin film processing apparatus, which can be a spatial ALD (Alternating Discharge) apparatus or a semiconductor etching apparatus. The gas distribution assembly of the semiconductor thin film processing apparatus includes multiple strip-shaped protrusions on the branch outlet side. These protrusions are spaced apart circumferentially on a separator, and multiple branch outlets are disposed on these protrusions. This creates a gas curtain with sequentially distributed high and low pressure zones between adjacent reaction regions, preventing the reactant gas and the metal source gas from reacting before contacting the substrate surface. This enhances the separation effect between the reactant gas and the metal source gas, ensuring the uniformity and quality of the thin film deposition.

[0028] Reference Figure 1 and Figure 2 This application provides a gas distribution assembly 3 for a semiconductor thin film processing apparatus, the gas distribution assembly 3 comprising: The separator 31 includes a central portion 311 and a plurality of branch portions 312 connected to the central portion 311 and spaced apart. The branch section 312 has a branch air passage, which includes at least one branch air inlet 3121 located on the air inlet side of the branch section 312 and multiple branch air outlets 3122 located on the air outlet side of the branch section 312. The multiple branch air outlets 3122 are connected to the branch air inlet 3121. See Figure 11The branch section 312 has multiple strip-shaped protrusions 3123 on its air outlet side. The multiple strip-shaped protrusions 3123 are arranged at intervals in the circumferential direction of the separator 31, and multiple branch air outlets 3122 are disposed on the multiple strip-shaped protrusions 3123.

[0029] See Figure 1 The top of the separator 31 can be provided with one or more air inlets. The air inlet of the separator 31 is located outside the reaction chamber so that it can be connected to an external gas source to obtain the gas required for isolation. The bottom of the separator 31 can be provided with one or more air outlets. The air outlet of the separator 31 is connected to the reaction chamber of the semiconductor thin film processing equipment, which can accurately introduce the gas provided by the external gas source into the reaction chamber and effectively separate the reaction gas and metal source gas of the thin film deposition reaction in the reaction chamber, so as to ensure that the thin film deposition reaction on the substrate can proceed normally.

[0030] In the above embodiments, the separator 31 includes a central portion 311 and a plurality of branch portions 312 connected to and spaced apart from the central portion 311. The branch portions 312 can be integrally formed with the central portion 311, for example, by die casting or casting to create an integral separator 31. The central portion 311 serves to connect and support the branch portions 312, ensuring the structural integrity of the separator 31. Alternatively, the branch portions 312 and the central portion 311 can be formed independently, improving the flexibility of the layout of the branch portions 312 and the central portion 311, while also helping to maintain the structural strength of the cover on which the separator 31 is located. Furthermore, the spaced design of the multiple branch portions 312 increases the paths and areas for gas distribution and separation, facilitating a more comprehensive separation of the reactant gas and the metal source gas.

[0031] See Figure 1 and Figure 2 The branch inlet 3121 of the branch gas path is the inlet for gas to enter the branch gas path to introduce isolation gas; the multiple branch outlets 3122 of the branch gas path distribute the isolation gas to the separation positions. The embodiment of this application, through the branch gas path structure design from at least one inlet to multiple outlets, can realize the dispersed output of isolation gas, so as to facilitate the subsequent formation of separation structures such as air curtains.

[0032] In the above embodiments, the separator 31 can be a radial structure with the central portion 311 as the center and the branch portion 312 as the radius. The projection of the branch portion 312 on the base of the reaction chamber divides the reaction chamber into multiple reaction regions. Specifically, the separator 31 is supplied with a separating gas at its inlet end. Separating gases such as nitrogen or argon can enter the reaction chamber through the outlet end of the separator 31 in the form of an air curtain, thereby separating the reaction chamber into multiple fan-shaped reaction regions.

[0033] See Figure 10 and Figure 11 Multiple strip-shaped protrusions 3123 on each branch 312 are arranged at intervals in the circumferential direction of the separator 31, forming a gap structure between adjacent strip-shaped protrusions 3123. The gap structure and the strip-shaped protrusions 3123 alternately cooperate. When the branch outlet 3122 outputs isolation gas, a high-pressure air curtain is formed at the strip-shaped protrusions 3123. The air curtain can form a gas barrier before the reactive gas reaches the substrate surface, effectively preventing the reactive gas and the metal source gas from mixing and avoiding premature reaction. Meanwhile, a low-pressure area is formed at the gap structure, which plays a role in transitioning and buffering the airflow, making the air curtain more stable and uniform. As a result, a high-pressure and low-pressure air curtain is obtained between adjacent reaction areas. When the reactive gas and the metal source gas encounter the air curtain, they are blocked on both sides of the air curtain and cannot mix with each other, thereby preventing the reactive gas and the metal source gas from reacting prematurely and ensuring the uniformity of film deposition and film quality.

[0034] In addition, the isolation gas, reaction gas, and metal source gas are rapidly drawn away after entering the low-pressure region of the gap structure, further preventing the gas from spreading to other reaction regions and further enhancing the separation effect between the reaction gas and the metal source gas.

[0035] In some embodiments, see Figure 5 and Figure 6 The branch air intake 3121 is located on the air intake side of the branch 312 near the center 311.

[0036] In the above embodiment, the isolation gas can enter the branch gas path from the air inlet side of the branch 312 near the center 311, which is conducive to the smooth delivery of the isolation gas in the branch 312 along the end near the center 311 to the end away from the center 311. This ensures that the isolation gas is evenly discharged through multiple branch outlets 3122 in the extension direction of the branch 312, which facilitates the control of the isolation gas flow rate and pressure, and ensures that the isolation gas forms a stable separating air curtain.

[0037] In some embodiments, the branch section 312 may have multiple branch air inlets 3121 on the air inlet side to increase the air intake flow rate of the branch section 312. The multiple branch air inlets 3121 may all be located at the end of the branch section 312 near the center section 311 to improve the flow efficiency of the isolation gas in the branch section 312; or, a portion of the multiple branch air inlets 3121 may be located at the end of the branch section 312 near the center section 311, while another portion may be located in the middle of the branch section 312's air inlet side, thereby enhancing the purge gas volume at the end of the branch section 312 away from the center section 311.

[0038] In some embodiments, see Figures 3 to 6The branch air path includes a partition gas buffer chamber 3124 disposed in the branch section 312, and the branch air inlet 3121 is connected to multiple branch air outlets 3122 through the partition gas buffer chamber 3124.

[0039] In the above embodiment, the isolation gas in the branch gas path enters from the branch inlet 3121 and first gathers in the separation gas buffer chamber 3124. The volume of the separation gas buffer chamber 3124 is larger than the volume of the branch inlet 3121 and the branch outlet 3122. That is, the separation gas buffer chamber 3124 can buffer and stabilize the purge airflow, preventing the isolation gas from rushing directly and quickly to the branch outlet 3122, reducing the turbulence and disturbance of the purge airflow, and allowing the isolation gas to flow out more smoothly and evenly from multiple branch outlets 3122, thereby improving the effectiveness of the isolation gas in separating adjacent reaction areas in the reaction chamber.

[0040] In some embodiments, see Figures 5 to 7 The branch air inlet 3121 extends circumferentially along the separator 31 and is connected to the separator air buffer chamber 3124 through multiple connecting holes 3125.

[0041] In the above embodiment, the branch air inlet 3121 extending circumferentially along the separator 31 enables the isolation gas to enter the branch air passage uniformly from the separator 31, avoiding the problem of excessively fast local airflow velocity or excessive pressure due to the excessive concentration of air inlet positions; at the same time, multiple connecting holes 3125 can also extend circumferentially along the separator 31 to disperse the large flow rate of isolation gas into multiple small flow rate isolation gases before entering the separator gas buffer chamber 3124, further reducing the impact force of the airflow, thereby ensuring that the isolation gas has a uniform flow velocity and pressure distribution when entering the separator gas buffer chamber 3124.

[0042] In some embodiments, the separator gas buffer chamber 3124 can be a large-volume buffer chamber, with one separator gas buffer chamber 3124 connected to multiple connecting holes 3125 and able to output the separator gas from the branch outlets 3122 on multiple strip-shaped protrusions 3123, ensuring a stable output of the separator gas; alternatively, the separator gas buffer chamber 3124 can include multiple strip-shaped buffer chambers, with each connecting hole 3125 corresponding to a strip-shaped buffer chamber connected to a branch outlet 3122 on a strip-shaped protrusion 3123, which optimizes the flow path of the separator gas, reduces energy loss and turbulence of the separator gas during the buffering process, and enables the separator gas to reach the branch outlet 3122 more smoothly and be output into the reaction chamber.

[0043] In some embodiments, see Figures 1 to 4 The central part 311 has a central air passage, which includes at least one central air inlet 3111 located on the air inlet side of the central part 311 and a plurality of central air outlets 3112 located on the air outlet side of the central part 311. Multiple central air outlets 3112 are arranged in multiple rows and are correspondingly set with multiple branch air outlets 3122.

[0044] In the above embodiments, the central inlet 3111 is the starting port for the isolation gas to enter the central gas path, providing a channel for inert isolation gases such as nitrogen or argon to enter the gas distribution system. One central inlet 3111 can be connected to multiple central outlets 3112 through a central buffer chamber, which simplifies the structure of the central part 311 while ensuring the purging flow rate; alternatively, multiple central inlets 3111 can be connected to multiple central outlets 3112 through a central buffer chamber. Multiple central inlets 3111 can be supplied with the same isolation gas or different types of isolation gases, which not only increases the flow rate of the isolation gas but also facilitates independent control of the flow rate and pressure of different gases, improving the flexibility and controllability of the isolation gas control.

[0045] In some embodiments, see Figure 4 The central air inlet 3111 can deliver part of the isolation gas to the branch air outlet 3122 through the central buffer chamber, so as to increase the flow rate of the isolation gas in the branch 312 and ensure the separation effect of the separator 31 on the adjacent reaction areas.

[0046] In some embodiments, the air outlet side of the branch portion 312 is flush with the air outlet side of the central portion 311.

[0047] In the above embodiments, the branch portion 312 and the central portion 311, which are flush with each other on the gas outlet side, allow the isolation gas coming out of the central portion 311 and the branch portion 312 to be released simultaneously at similar spatial positions. This helps the isolation gas to diffuse and distribute more evenly in the reaction chamber, avoids the problem of uneven gas distribution caused by differences in gas outlet positions, improves the isolation effect on different reaction areas, and ensures the stability and consistency of the thin film deposition process.

[0048] In some embodiments, see Figure 11 and Figure 12 The outlet side of the branch 312 protrudes from the outlet side of the central part 311.

[0049] In the above embodiment, the gas outlet side of the branch 312 protrudes beyond the gas outlet side of the central portion 311, allowing the multiple strip-shaped protrusions 3123 to penetrate deeper into the reaction chamber. This enables the isolation gas to be more thoroughly purged and diffused in the region opposite the branch 312 within the reaction chamber. During the thin film deposition reaction, the region opposite the branch 312 is the separation region between adjacent reaction regions. This separation region is often where the reactant gas and the metal source gas are prone to mixing and interference. The protruding gas outlet side of the branch 312 can more effectively form an isolation gas flow in this separation region, preventing gases from different reaction regions from mixing in this region and further improving the uniformity of thin film deposition.

[0050] In some embodiments, see Figures 1 to 11 The central part 311 and multiple branch parts 312 form a straight, V-shaped, Y-shaped or cross-shaped separator.

[0051] In the above embodiments, the partition structure composed of the central portion 311 and multiple branch portions 312 can adapt to the partitioning requirements of different reaction regions in the reaction chamber. The straight-line partition 31 has a simple structure and can roughly divide the reaction chamber into two main reaction regions, making it suitable for thin film deposition processes with simple partitioning requirements and fewer types of reaction gases. The straight-line partition 31 can quickly and effectively divide the reaction chamber, reduce gas mixing between different regions, and improve the stability and controllability of the reaction.

[0052] The V-shaped separator 31 can divide the reaction chamber into reaction regions of different volumes to accommodate the reaction and film deposition of reactive gases with different reactivity. For example, relatively reactive gases can be collected in relatively small reaction regions, while relatively less reactive gases can be collected in relatively large reaction regions.

[0053] The Y-shaped separator 31 can divide the reaction chamber into three relatively independent reaction zones. Each reaction zone can be independently controlled and adjusted according to specific process requirements. Inhibitors or catalysts can also be added to control the reaction activity, improving the uniformity and stability of the thin film deposition reaction throughout the reaction chamber. Alternatively, the cross-shaped separator 31 can divide the reaction chamber into four relatively independent reaction zones, simultaneously achieving the deposition reaction of two sets of reactive gases, thus improving the efficiency of thin film deposition.

[0054] See Figures 8 to 10 This application provides a semiconductor thin film processing apparatus, which includes a chamber base 1, a cover 2, and the aforementioned gas distribution assembly 3. The chamber base 1 has a top opening 11, and the cover 2 is detachably disposed at the top opening 11 and forms a reaction chamber between the cover 2 and the chamber base 1. The cover 2 is provided with an installation groove 21, and the partition 31 is installed in the installation groove 21.

[0055] In the above embodiments, the chamber base 1 provides a stable support and installation platform for the semiconductor thin film processing equipment. The chamber base 1 has a top opening 11, which cooperates with the cover 2 to form a reaction chamber, providing a spatial environment for the semiconductor thin film processing process. At the same time, the chamber base 1 can withstand the pressure and temperature changes during the process operation inside the reaction chamber, ensuring the long-term stable operation of the semiconductor thin film processing equipment.

[0056] In addition, the top opening 11 allows the cover 2 to be easily opened when maintenance and repair work such as inspection, cleaning, and replacement of parts is required inside the reaction chamber, ensuring the cleanliness and process stability of the reaction chamber.

[0057] See Figure 10 The mounting groove 21 can be a through hole or a countersunk hole on the cover 2. The mounting groove 21 can accurately position the separator 31 on the cover 2, ensure the stability of the separator 31 installation, ensure the separation effect of the separator 31 on the reaction chamber, realize effective isolation and airflow control between different reaction areas, and ensure that the reaction in each reaction area can be carried out according to the predetermined process parameters, thereby improving the quality of the film.

[0058] In some embodiments, see Figure 8 and Figure 9 The semiconductor thin film processing equipment includes a support unit 4, which is rotatably disposed in the reaction chamber and used to support the substrate; The central part 311 has a recessed area 313 on the air outlet side relative to the branch part 312. The supporting part 4 is provided with a boss 41, which is nested with the recessed area 313 and forms a clearance fit.

[0059] In the above embodiment, the support part 4 is rotatably disposed in the reaction chamber, providing stable support for multiple substrates and ensuring that the substrates can maintain a fixed position and rotational posture in the reaction chamber, while ensuring that the film can be uniformly deposited on the substrate surface.

[0060] See Figure 9 The boss 41 and the recessed area 313 are located in the middle area of ​​multiple reaction areas. The nested cooperation between the boss 41 and the recessed area 313 can form a step gap between multiple reaction areas. While ensuring the stability of substrate rotation and the uniformity of film deposition, it avoids gas leakage between multiple reaction areas and prevents gases from different reaction areas from mixing in the middle area, thereby improving the uniformity of film deposition on the substrate.

[0061] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A gas distribution assembly for a semiconductor thin film processing apparatus, characterized in that, include: The separator (31) includes a central portion (311) and a plurality of branches (312) connected to the central portion (311) and spaced apart. The branch section (312) has a branch air passage, which includes at least one branch air inlet (3121) located on the air inlet side of the branch section (312) and a plurality of branch air outlets (3122) located on the air outlet side of the branch section (312). The branch (312) air outlet side includes a plurality of strip-shaped protrusions (3123), the plurality of strip-shaped protrusions (3123) are arranged at intervals in the circumferential direction of the separator (31), and the plurality of branch air outlets (3122) are disposed on the plurality of strip-shaped protrusions (3123).

2. The gas distribution assembly according to claim 1, characterized in that, The branch air inlet (3121) is located on the air intake side of the branch (312) near the center (311).

3. The gas distribution assembly according to claim 1, characterized in that, The branch gas path includes a partition gas buffer chamber (3124) disposed in the branch section (312), and the branch air inlet (3121) is connected to the plurality of branch air outlets (3122) through the partition gas buffer chamber (3124).

4. The gas distribution assembly according to claim 3, characterized in that, The branch air inlet (3121) extends circumferentially along the separator (31) and is connected to the separator air buffer chamber (3124) through a plurality of connecting holes (3125).

5. The gas distribution assembly according to claim 1, characterized in that, The central part (311) has a central air passage, which includes at least one central air inlet (3111) located on the air inlet side of the central part (311) and a plurality of central air outlets (3112) located on the air outlet side of the central part (311). The plurality of central air outlets (3112) are arranged in multiple rows and are correspondingly arranged with the plurality of branch air outlets (3122).

6. The gas distribution assembly according to claim 5, characterized in that, The air outlet side of the branch (312) is flush with the air outlet side of the center (311).

7. The gas distribution assembly according to claim 5, characterized in that, The branch (312) protrudes from the air outlet side of the central part (311).

8. The gas distribution assembly according to claim 5, characterized in that, The central portion (311) and the plurality of branches (312) form a straight, V-shaped, Y-shaped or cross-shaped separator.

9. A semiconductor thin film processing apparatus, characterized in that, It includes a chamber base (1), a cover (2), and a gas distribution assembly (3) as described in any one of claims 1-8; The chamber base (1) has a top opening (11), the cover (2) is detachably disposed on the top opening (11) and forms a reaction chamber with the chamber base (1), the cover (2) is provided with an installation groove (21), and the separator (31) is installed in the installation groove (21).

10. The semiconductor thin film processing apparatus according to claim 9, characterized in that, The semiconductor thin film processing equipment includes a support unit (4), which is rotatably disposed in the reaction chamber and used to support the substrate; The central part (311) has a recessed area (313) on the air outlet side relative to the branch part (312) on the air outlet side. The bearing part (4) is provided with a boss (41), which is nested with the recessed area (313) and forms a gap fit.

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