Test system and test method

Abstract

The invention provides a testing system and a testing method, and relates to the technical field of electronic equipment testing. The test system comprises a test voltage generator used for applying a test voltage to a first electronic device and determining a to-be-tested position, the to-be-tested position generating an ablation trace; the harmonic detector is used for carrying out harmonic detection on second electronic equipment after gap improvement is carried out on the positions, corresponding to the to-be-detected position of the first electronic equipment, in the second electronic equipment in sequence, and the second electronic equipment is the electronic equipment in the same batch as the first electronic equipment; the harmonic problem of the second electronic equipment is the same as that of the first electronic equipment, and the harmonic detection results of the second electronic equipment before and after gap improvement are used for determining the intermetallic microscopic gap position causing harmonic generation of the electronic equipment. According to the embodiment of the invention, blind and undifferentiated troubleshooting on the electronic equipment can be avoided, and the efficiency and accuracy of searching for the microscopic gap between the metals in the electronic equipment are remarkably improved.

Description

Technical Field

[0001] This application relates to the field of electronic device testing technology, and in particular to a testing system and testing method. Background Technology

[0002] In the research and development and production of consumer electronic devices such as smartphones and smartwatches, radiated spurious emission (RSE) is a key electromagnetic compatibility indicator. Exceeding RSE limits can not only cause electronic devices to fail certification tests, but also interfere with the device's communication performance and affect the user experience.

[0003] A significant cause of radiated stray emissions is metal mis-contact; that is, between two metal components inside electronic devices that should maintain insulation or reliable contact, a tiny overlap occurs due to structural tolerances, assembly deviations, or stress release, without establishing effective physical contact or welding. These microscopic gaps between metals are often only nanometers to micrometers in size, far smaller than conventional mechanical gaps, yet large enough to form nonlinear contact under high-frequency signal excitation, generating harmonic components and thus causing radiated stray emissions. Because of their extremely small size and location inside electronic devices, conventional physical detection methods, such as industrial computed tomography (CT) scans, struggle to distinguish such minute gaps. This results in these microscopic gaps often requiring lengthy localization times, significantly extending the debugging and verification cycle of electronic devices and impacting project progress. Summary of the Invention

[0004] This application provides a testing system and testing method for quickly locating and positioning micro-gap between metals in electronic devices.

[0005] To achieve the above objectives, the embodiments of this application adopt the following technical solutions: Firstly, a testing system is provided for testing electronic devices where the intermetallic micro-gap is related to harmonics. The testing system includes a test voltage generator and a harmonic detector. The test voltage generator applies a test voltage to a first electronic device to determine a test location, where ablation marks are observed. The harmonic detector performs harmonic detection on a second electronic device after sequentially improving the gap at locations corresponding to the test location in the first electronic device. The second electronic device is from the same batch as the first electronic device, and its harmonic problems are the same. The harmonic detection results before and after gap improvement in the second electronic device are used to determine the location of the intermetallic micro-gap causing harmonics in the electronic device.

[0006] This application's implementation combines destructive localization with non-destructive verification to achieve precise location of micro-gap between metals. First, a test voltage is applied to a first electronic device, breaking down the air or medium at the micro-gap and creating irreversible ablation marks, thus marking the previously invisible micro-gap location. Then, based on the ablation marks on the first electronic device, targeted gap improvement is performed on the corresponding location on a second electronic device. Since the first and second electronic devices are from the same batch and share the same harmonic problems, it can be reasonably inferred that the physical defects (i.e., micro-gap between metals) in the first and second electronic devices are also highly consistent. Because applying the test voltage to the first electronic device is destructive, verification is finally performed on the second electronic device. By comparing the harmonic detection results of the second electronic device before and after improvement, it can be accurately determined whether the location is the true source of the micro-gap. This application's implementation avoids blind and indiscriminate inspection of electronic devices, significantly improving the efficiency and accuracy of locating micro-gap between metals in electronic devices.

[0007] In some possible implementations, the harmonic detector is also used to perform harmonic detection on electronic devices in the same batch to identify a first electronic device and a second electronic device. The first electronic device and the second electronic device are electronic devices in the same batch that have the same harmonic problem. The same harmonic problem can include the same harmonic generation location, the same harmonic components, and the same amplitude of each harmonic component.

[0008] In some possible implementations, the test voltage generator may include a constant voltage DC power supply and electrodes, the constant voltage DC power supply being connected to the electrodes, the electrodes being used to receive the voltage output by the constant voltage DC power supply and apply a test voltage to a first electronic device.

[0009] The embodiments of this application connect a constant voltage DC power supply to the electrodes, allowing the test voltage to be precisely applied to a designated location on the first electronic device (e.g., the location where harmonics are generated). By providing a stable and adjustable DC high voltage through the constant voltage DC power supply, the reliability of the breakdown process can be ensured, enabling reliable ablation marks to be generated at the microscopic gaps between metals.

[0010] In some possible implementations, the test voltage generator may include an electrostatic discharge (ESD) generator. The pulsed high voltage of the ESD generator has less thermal impact on non-test locations on the first electronic device, reducing the risk of collateral damage to other intact parts of the first electronic device during destructive testing.

[0011] In some possible implementations, the harmonic detector includes a probe, a high-pass filter, and a spectrum analyzer, with the spectrum analyzer connected to the probe via the high-pass filter. The probe is used to detect electromagnetic wave signals radiated by electronic devices. The high-pass filter is used to transmit harmonic signals other than the fundamental frequency signal from the electromagnetic wave signal to the spectrum analyzer.

[0012] The embodiments of this application use a high-pass filter to filter out the fundamental signal, thereby preventing the accuracy of spectrum analysis results from being affected by spectrum analyzer overload.

[0013] Secondly, a testing method is provided for electronic devices. The micro-gap between metals in the electronic device is related to the harmonics of the device. The testing method includes: applying a test voltage to a first electronic device to determine the test location, where ablation marks are observed. After sequentially improving the gaps at locations in a second electronic device corresponding to the test location in the first electronic device, harmonic detection is performed on the second electronic device. The second electronic device is from the same batch as the first electronic device, and the harmonic problems of the second electronic device are the same as those of the first electronic device. Based on the harmonic detection results before and after gap improvement in the second electronic device, the location of the micro-gap between metals causing harmonics in the electronic device is determined.

[0014] In some possible implementations, before applying a test voltage to the first electronic device, the method further includes: performing harmonic detection on electronic devices from the same batch to identify the first electronic device and the second electronic device.

[0015] In some possible implementations, similar harmonic problems include: identical harmonic generation locations, identical harmonic components, and identical amplitudes of each harmonic component. Harmonics generated by intermetallic micro-gap have specific frequency domain characteristics (i.e., harmonic components) and energy intensity (i.e., amplitudes of harmonic components), and their influence is spatial (i.e., harmonic generation location) because physical location determines the circuit path. If two electronic devices have identical harmonic generation locations, identical harmonic components, and identical amplitudes of each harmonic component, it indicates that their internal micro-gap is highly similar in physical location, discharge energy, or degree of influence on the circuit. By introducing these specific matching conditions, the embodiments of this application ensure a high degree of homology between the defects of the first electronic device used as a destructive sample and the second electronic device used as a verification sample, reducing positioning errors caused by individual differences in electronic devices.

[0016] In some possible implementations, applying a test voltage to the first electronic device includes applying a test voltage to the location where the first electronic device generates harmonics.

[0017] The embodiments of this application use the specific location where the harmonics are generated, determined by harmonic detection, as the application point of the test voltage. This allows the test voltage to be precisely guided to the region where microscopic gaps are most likely to exist, thereby ensuring that the generated ablation marks are directly related to the location of the harmonic source, improving the accuracy of the positioning and the pertinence of subsequent verification.

[0018] In some possible implementations, gap improvement is performed sequentially on the positions in the second electronic device corresponding to the test position in the first electronic device, including: sequentially insulating the positions in the second electronic device corresponding to the test position in the first electronic device; or, sequentially applying pressure to the positions in the second electronic device corresponding to the test position in the first electronic device.

[0019] The proposed implementation method involves sequentially insulating the locations corresponding to the ablation marks to ensure reliable insulation at the locations that need to be disconnected; or, sequentially applying pressure to the locations corresponding to the ablation marks to ensure reliable contact at the locations that need to be connected, thereby eliminating microscopic gaps between metals.

[0020] In some possible implementations, where the harmonics of the second electronic device disappear after gap improvement, the location for gap improvement is the location of the intermetallic micro-gap that causes the harmonics in the electronic device.

[0021] Based on the physical mechanism of harmonic generation, the microscopic gaps between metals in this application are the root cause of specific harmonic problems. If the harmonics disappear after improving the gap at a specific location, it indicates a direct causal relationship between that location and the harmonic problem. Since the first electronic device and the second electronic device have the same harmonic problem, and the improvement location is determined based on the ablation marks of the first electronic device, this location is a common location of the microscopic gaps between metals in the electronic devices of this process batch, thereby efficiently completing the work of finding and confirming the microscopic gaps between metals. Attached Figure Description

[0022] Figure 1 A schematic diagram of the tunneling effect in quantum mechanics provided in an embodiment of this application; Figure 2 A schematic diagram of a test system structure provided in an embodiment of this application; Figure 3 This is a schematic diagram of another test system structure provided in an embodiment of this application; Figure 4 A flowchart illustrating the testing method provided in the embodiments of this application; Figure 5 This is a schematic diagram showing the ablation marks generated after applying a test voltage to the first electronic device in S120, as provided in the embodiment of this application. Figure 6This is a schematic diagram of S130 provided in the embodiment of this application, in which harmonic detection is performed on the second electronic device after gap improvement is performed on the position corresponding to the position to be tested in the first electronic device.

[0023] Reference numerals: 100, Test system; 110, Test voltage generator; 111, Constant voltage DC power supply; 112, Electrode; 113, Electrostatic discharge generator; 120, Harmonic detector; 121, Probe; 122, High-pass filter; 123, Spectrum analyzer; 130, Test fixture. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0025] The terms "first" and "second" used in the embodiments of this application are only used to distinguish features of the same type and should not be construed as indicating relative importance, quantity, order, etc.

[0026] The terms "exemplary" or "for example" used in the embodiments of this application are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this application should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0027] The terms "coupling" and "connection" used in the embodiments of this application should be interpreted broadly. For example, they can refer to a physical direct connection or an indirect connection achieved through electronic devices, such as a connection achieved through resistors, inductors, capacitors or other electronic devices.

[0028] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the descriptions of each implementation method in the above embodiments have different focuses. For any part not described in detail in a certain implementation method, please refer to the corresponding process in the aforementioned implementation methods, which will not be repeated here.

[0029] In electronic products such as smartphones and smartwatches, it is difficult to avoid the problem of stray radiation emissions caused by accidental metal contact. Accidental metal contact refers to the situation where two metal components inside an electronic device, which should be kept insulated or in reliable contact, form a tiny overlap structure due to structural tolerances, assembly deviations, or stress release, but fail to establish effective physical contact or welding.

[0030] The core mechanism of stray emission caused by metal misinterpretation is that when two metals overlap at a nanoscale gap, a microscopic "metal-gap-metal" structure with nonlinear current-voltage characteristics is formed. This structure can be called an electron tunnel junction. Figure 1 As shown, in classical mechanics, the behavior of a particle (e.g., an electron) is entirely determined by its energy E and the potential barrier height V0. When the particle's energy is sufficient (i.e., E > V0), the particle will inevitably cross the barrier and move to the other side. Conversely, when the particle's energy is insufficient (i.e., E < V0), the particle will be reflected and unable to enter the barrier region. In quantum mechanics, however, particles exhibit wave-particle duality. Their state is determined by the wave function. Ψe Description. Wave function in front of the potential barrier. Ψe It is now an amplitude-stable oscillating wave; even if the particle's energy is insufficient, the wave function... Ψe It does not immediately become zero, but rather penetrates into the barrier with exponential decay. If the barrier width d is not infinitely wide, the decaying wave function... Ψe The particle will reappear on the other side of the barrier and continue to propagate with a smaller amplitude, which means that the particle has a certain probability of passing through the barrier that would be impossible to cross in classical mechanics.

[0031] In other words, electrons have a certain probability of penetrating the potential barrier and passing through the tunnel junction; this is known as the tunneling effect. When the operating current of an electronic device passes through this tunnel junction, the fundamental frequency signal contained in the operating current is nonlinearly modulated by the tunnel junction, generating spurious components such as higher harmonics of the fundamental frequency signal; that is, the microscopic gaps between metals in the electronic device are related to the harmonics of the electronic device. When these higher harmonics are radiated, it can easily cause excessive radiated spurious emissions. Excessive radiated spurious emissions may not only cause the electronic device to fail certification tests, but also interfere with the communication performance of the device, affecting the user experience.

[0032] like Figure 2 As shown in the figure, this application provides a testing system 100 for testing electronic devices, including a test voltage generator 110 and a harmonic detector 120. The test voltage generator 110 applies a test voltage to the electronic device, and the harmonic detector 120 performs harmonic detection on the electronic device. In some embodiments, the testing system 100 may further include a test fixture 130, which is used to fix the electronic device to be tested in the same position to ensure the consistency and safety of the test.

[0033] In some embodiments, the test voltage generator 110 includes a constant voltage DC power supply 111 and an electrode 112, with the constant voltage DC power supply 111 connected to the electrode 112. The constant voltage DC power supply 111 provides a DC voltage to the electrode 112; in some examples, the amplitude of the DC voltage is adjustable from 0V to 1000V. The electrode 112 receives the DC voltage output from the constant voltage DC power supply 111, thereby applying a test voltage to the electronic device. In some examples, the electrode 112 needs to be made of a metal that is not easily ablated, has a surface roughness that is as low as possible, and is preferably spherical in shape to ensure a consistent electric field strength; for example, the electrode 112 is a tungsten alloy spherical electrode 112.

[0034] like Figure 3 As shown, in some other embodiments, the test voltage generator 110 includes an electrostatic discharge generator 113 (also referred to as an electrostatic gun). The electrostatic discharge generator 113 provides an adjustable voltage range of 100V-20000V to suit scenarios requiring high-voltage testing.

[0035] like Figure 2 and Figure 3 As shown, in some embodiments, the harmonic detector 120 includes a probe 121, a high-pass filter 122, and a spectrum analyzer 123, which is connected to the probe 121 via the high-pass filter 122.

[0036] In some examples, probe 121 can be made using an RF coaxial cable. The shielding structure of the RF coaxial cable (with the outer conductor grounded) can suppress external electromagnetic interference, ensuring that probe 121 can accurately detect the electromagnetic wave signals radiated by the electronic device when it is close to the electronic device under test. Furthermore, the wide bandwidth characteristics of the RF coaxial cable can cover the high-frequency range required for harmonics.

[0037] The high-pass filter 122 is used to transmit harmonic signals other than the fundamental signal in the electromagnetic wave signal to the spectrum analyzer 123, so as to prevent the accuracy of the spectrum analysis results from being affected by the overload of the spectrum analyzer 123.

[0038] The spectrum analyzer 123 (also known as a spectrum signal analyzer) is used to convert the harmonic signal transmitted by the high-pass filter 122 from the time domain to the frequency domain; that is, Fourier transform, so that the amplitude of each frequency harmonic component of the harmonic signal can be displayed intuitively in the form of a spectrum diagram. In some examples, the frequency range of the spectrum analyzer 123 is 1MHz-26GHz.

[0039] This application also provides a testing method for detecting intermetallic micro-gap in electronic devices, where, for example, the intermetallic micro-gap is less than 10 nm. Figure 4 As shown, the test method includes S110-S140, as follows: S110, The harmonic detector performs harmonic detection on electronic devices in the same batch to identify the first electronic device and the second electronic device.

[0040] In some implementations, both the first electronic device and the second electronic device have harmonic problems, and the harmonic problems of the first electronic device and the second electronic device are the same.

[0041] In some implementations, identical harmonic problems include identical harmonic generation locations. Taking smartphones as an example, if, within the same batch of smartphones, the harmonic detector 120 can detect large harmonics in the motherboard area of ​​both smartphone A and smartphone B, but detects small harmonics or even no harmonics in the sub-board area, then it can be determined that the harmonic generation locations of smartphone A and smartphone B are the same. Since the physical location of the microscopic gaps between metals determines the location of the tunneling effect, the harmonic generation location can be roughly determined.

[0042] In some implementations, identical harmonic problems also include identical harmonic components (e.g., third harmonic, fifth harmonic, etc.) and identical amplitudes of each harmonic component. Furthermore, the harmonic detector 120 can perform spectral analysis on the harmonics detected from smartphone A and smartphone B to determine the harmonic components and their amplitudes. When the harmonic components detected from smartphone A are identical to those detected from smartphone B, and the amplitudes of the harmonic components detected from smartphone A and smartphone B are identical, smartphone A can be identified as the first electronic device, and smartphone B as the second electronic device.

[0043] It should be understood that the same harmonic component amplitudes shown in the embodiments of this application include cases where they are approximately the same, and such cases are within an acceptable deviation range; for example, the acceptable deviation range for approximately the same is within ±10dB.

[0044] As mentioned above, the microscopic gaps between metals in electronic devices are related to the harmonics of the electronic devices; that is, the microscopic gaps between metals in electronic devices can cause harmonics to be generated, which can easily lead to excessive radiated stray emissions of the electronic devices. If the first electronic device and the second electronic device have the same location where harmonics are generated, the same harmonic components, and the same amplitude of each harmonic component, it indicates that the microscopic gaps inside them are highly similar in physical location, discharge energy, or degree of influence on the circuit. This ensures that the defects between the first electronic device and the second electronic device are highly homogeneous, reducing errors caused by individual differences.

[0045] S120: The test voltage generator applies a test voltage to the first electronic device to determine the location to be tested.

[0046] like Figure 5 As shown, in some embodiments, the test voltage generator 110 can apply a test voltage to the harmonic generation location of the first electronic device. The harmonic generation location can be a location where the harmonic amplitude detected by the harmonic detector 120 in the first electronic device (and the second electronic device) exceeds a preset threshold. This allows the test voltage to be precisely guided to the region most likely to contain microscopic gaps, improving the accuracy of the localization and the targeted nature of subsequent verification.

[0047] The test voltage can be determined in detail according to the actual situation; for example, a test voltage of 10kV can be used for the first electronic device that has not been disassembled, and a test voltage of 1kV can be used for the first electronic device that has been disassembled (e.g., the back cover has been removed).

[0048] The test voltage can break down the microscopic gaps between the metals in the first electronic device, thereby producing ablation marks. The test location is the location with ablation marks. In other words, locations with stable electrical connections or stable insulation in the first electronic device will not be affected by the test voltage; however, locations with microscopic gaps between the metals in the first electronic device (i.e., locations where metal is accidentally touched) will produce ablation marks due to dielectric breakdown. The test location can be determined based on the ablation marks.

[0049] S130. After sequentially improving the gap at the positions in the second electronic device corresponding to the positions to be tested in the first electronic device, the harmonic detector performs harmonic detection on the second electronic device.

[0050] In some examples, the location in the second electronic device corresponding to the test location in the first electronic device may be a location that needs to be disconnected, but microscopic gaps between the metals are created due to wear of the insulating film. Therefore, in some implementations, it is determined whether the test location is a location that needs to be disconnected based on the test location and the circuit design of the electronic device. If so, the location in the second electronic device corresponding to the test location in the first electronic device can be sequentially insulated; for example, by spraying insulating varnish or attaching an insulating film, thereby physically isolating the microscopic gaps between the two metal bodies, ensuring reliable insulation of the location that needs to be disconnected, and thus eliminating the microscopic gaps between the metals.

[0051] In other examples, the location in the second electronic device corresponding to the test location in the first electronic device may also be a location requiring connection. However, insufficient pressure, surface contamination, or microscopic unevenness can lead to unstable connections and microscopic gaps between the metals. Therefore, in other embodiments, it is determined whether the test location is a location requiring connection based on the test location and the circuit design of the electronic device. If so, pressure can be sequentially applied in the second electronic device to the location corresponding to the test location in the first electronic device; for example, applying pressure through a clamp or other mechanical structure. This pressure can tightly fit the two metal bodies that originally had microscopic gaps together, ensuring reliable contact at the location requiring connection, thereby eliminating the microscopic gaps between the metals.

[0052] It should be understood that "in sequence" in "performing gap improvement in sequence" as described in S130 means that the improvement can be carried out one by one at the position corresponding to the position to be measured, or multiple positions corresponding to the position to be measured can be improved in groups, so as to distinguish the degree of influence of each position or group of positions on the harmonic problem.

[0053] like Figure 6 As shown, after each gap improvement operation is completed; for example, after improving a position corresponding to the position to be measured, the second electronic device is subjected to a harmonic detection using the harmonic detector 120, and the harmonic detection result of the second electronic device after gap improvement can be obtained.

[0054] S140. Determine the location of the metal-to-metal micro-gap that causes harmonics in the second electronic device based on the harmonic detection results before and after gap improvement.

[0055] The harmonic detection results of the second electronic device before gap improvement can be obtained in S110, and the harmonic detection results of the second electronic device after gap improvement can be obtained in S130. In some embodiments, if the harmonics of the second electronic device are significantly reduced or completely eliminated after gap improvement compared to before improvement, it indicates a direct causal relationship between the location and the harmonic problem. Since the first and second electronic devices have the same harmonic problem, and the improvement location is determined based on the ablation marks of the first electronic device, this location is a common location of this type of defect in the electronic devices of this process batch, thereby enabling efficient location and confirmation of the micro-gap between metals that causes the electronic device.

[0056] After determining the location of the micro-gap between metals that causes the electronic device, the welding, assembly and other processes of the electronic device can be modified, thereby weakening or even eliminating the radiative stray emission problem caused by the micro-gap between metals in the next batch of electronic devices.

[0057] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the descriptions of each implementation method in the above embodiments have different focuses. For parts not described in detail in a certain implementation method, refer to the corresponding processes in the aforementioned related implementation methods, which will not be repeated here.

[0058] This application provides a testing system and method. The method combines destructive localization with non-destructive verification to accurately locate micro-gap between metals. First, a test voltage is applied to a first electronic device, which breaks down the air or medium at the micro-gap, generating irreversible ablation marks and thus marking the previously invisible micro-gap location. Then, based on the ablation marks on the first electronic device, targeted gap improvement is performed on the corresponding location on a second electronic device. Since the first and second electronic devices are from the same batch and share the same harmonic problems, it can be reasonably inferred that the physical defects (i.e., micro-gap between metals) in the first and second electronic devices are also highly consistent. Finally, by comparing the harmonic detection results of the second electronic device before and after improvement, it can be accurately determined whether the location is the true source of the micro-gap. This application avoids blind and indiscriminate inspection of electronic devices, significantly improving the efficiency and accuracy of locating micro-gap between metals in electronic devices.

[0059] In the several embodiments provided in this application, it should be understood that the disclosed test system and test method can also be implemented in other ways. For example, the device embodiments described above are merely illustrative. For instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another device, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or modules may be electrical, mechanical, or other forms.

[0060] The modules described as separate components may or may not be physically separate. Similarly, the components shown as modules may or may not be physical modules; they may be located on one device or distributed across multiple devices. Some or all of the modules can be selected to achieve the purpose of this embodiment, depending on actual needs.

[0061] In addition, the functional modules in the various embodiments of this application can be integrated into one device, or each module can exist physically separately, or two or more modules can be integrated into one device.

[0062] In the above embodiments, implementation can be achieved, in whole or in part, through software, hardware, firmware, or any combination thereof. When implemented using software programs, implementation can be, in whole or in part, in the form of a computer program product.

[0063] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A testing system, characterized in that, A testing system for testing electronic devices, wherein the intermetallic micro-gap in the electronic devices is related to the harmonics of the electronic devices, the testing system comprising: A test voltage generator is used to apply a test voltage to a first electronic device to determine the location to be tested, where the location to be tested shows ablation marks. A harmonic detector is used to perform harmonic detection on the second electronic device after sequentially improving the gap at the position corresponding to the test position of the first electronic device. The second electronic device is an electronic device from the same batch as the first electronic device, and the harmonic problem of the second electronic device is the same as that of the first electronic device. The harmonic detection results of the second electronic device before and after gap improvement are used to determine the location of the micro-gap between metals that causes harmonics in the electronic device.

2. The testing system according to claim 1, characterized in that, The harmonic detector is also used to perform harmonic detection on electronic devices in the same batch to identify the first electronic device and the second electronic device.

3. The testing system according to claim 1 or 2, characterized in that, The test voltage generator includes a constant voltage DC power supply and electrodes. The constant voltage DC power supply is connected to the electrodes, and the electrodes are used to receive the voltage output by the constant voltage DC power supply and apply the test voltage to the first electronic device.

4. The testing system according to claim 1 or 2, characterized in that, The test voltage generator includes an electrostatic discharge generator.

5. The testing system according to claim 1 or 2, characterized in that, The harmonic detector includes a probe, a high-pass filter, and a spectrum analyzer, wherein the spectrum analyzer is connected to the probe through the high-pass filter; The probe is used to detect electromagnetic wave signals radiated by electronic devices; The high-pass filter is used to transmit harmonic signals other than the fundamental wave signal in the electromagnetic wave signal to the spectrum analyzer.

6. A testing method, characterized in that, Applied to electronic devices, where the intermetallic micro-gap is related to the harmonics of the electronic device, the test method includes: A test voltage is applied to a first electronic device to determine the location to be tested, where ablation marks are produced. After sequentially improving the gap at the positions in the second electronic device corresponding to the test position in the first electronic device, harmonic detection is performed on the second electronic device. The second electronic device is a device from the same batch as the first electronic device, and the harmonic problem of the second electronic device is the same as that of the first electronic device. The location of the intermetallic micro-gap that causes harmonics in the second electronic device is determined based on the harmonic detection results before and after gap improvement.

7. The test method according to claim 6, characterized in that, Before applying the test voltage to the first electronic device, the method further includes: Harmonic detection is performed on electronic devices from the same batch to identify the first electronic device and the second electronic device.

8. The test method according to claim 6 or 7, characterized in that, The same harmonic problems include: the harmonics are generated at the same location, the harmonic components are the same, and the amplitudes of each harmonic component are the same.

9. The test method according to claim 8, characterized in that, Applying a test voltage to the first electronic device includes: The test voltage is applied to the harmonic generation location of the first electronic device.

10. The test method according to claim 6, characterized in that, The step of sequentially improving the gap at the positions in the second electronic device corresponding to the measured position in the first electronic device includes: In the second electronic device, the positions corresponding to the test positions of the first electronic device are sequentially insulated; or, in the second electronic device, pressure is sequentially applied to the positions corresponding to the test positions of the first electronic device.

11. The test method according to claim 6, characterized in that, When the harmonics of the second electronic device disappear after gap improvement, the location for gap improvement is the location of the micro-gap between the metals that caused the harmonics in the electronic device.

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