Pressure control method of semiconductor reaction chamber

Abstract

The invention provides a pressure control method of a semiconductor reaction cavity, and relates to the technical field of semiconductor manufacturing. The pressure control method comprises the steps that a target pressure value is preset, an actual pressure value is obtained, whether the difference value between the actual pressure value and the target pressure value meets a preset condition or not is judged, and if yes, a first pressure control mode is executed; the first pressure control mode is used for calculating total time required for adjusting an initial pressure value to a target pressure value by setting a total target pressure change rate, and dividing the total time into a plurality of control periods; and in each control period, according to the ratio of the actual pressure change rate to the total target pressure change rate, the set pressure change rate of the next period is dynamically adjusted, and the actual pressure value is gradually adjusted to the target pressure value. By dividing the control period and dynamically adjusting the pressure change rate, uniformity and stability of pressure adjustment are achieved, and pressure fluctuation is effectively restrained.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method for controlling the pressure of a semiconductor reaction chamber. Background Technology

[0002] Pressure control within the semiconductor reaction chamber is a crucial step in semiconductor manufacturing. The fabrication of semiconductor devices typically involves multiple complex chemical reactions and physical processes, which are highly sensitive to pressure conditions within the semiconductor reaction chamber. Accurate and stable pressure control not only ensures the stability and consistency of the reaction process but also effectively improves product yield and performance. Therefore, pressure control methods for semiconductor reaction chambers have always been a key focus of research and development in the semiconductor manufacturing field.

[0003] However, existing pressure control methods for semiconductor reaction chambers often struggle to achieve uniform pressure changes, resulting in fluctuations in the rate of pressure change during adjustment. These fluctuations not only lead to deviations between the actual and target pressures within the semiconductor reaction chamber but may also trigger instability during the reaction process, thereby affecting the quality and performance of semiconductor devices. Summary of the Invention

[0004] The purpose of this invention is to provide a pressure control method for a semiconductor reaction chamber, which solves the problems of fluctuating pressure change rate and difficulty in achieving uniform control during chamber pressure adjustment, leading to deviation between actual pressure and target pressure, unstable reaction process, and damage to the quality and performance of semiconductor devices.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution: A pressure control method for a semiconductor reaction chamber, the pressure control method comprising: The target pressure value P of the semiconductor reaction chamber is preset. f And obtain the actual pressure value of the semiconductor reaction chamber; Determine the difference between the actual pressure value and the target pressure value P. f Whether the pressure difference between them meets the preset conditions, and execute the first pressure control mode when the pressure difference meets the preset conditions; The first pressure control mode includes the following steps: The initial actual pressure value of the semiconductor reaction chamber is taken as the initial pressure value P0, and the semiconductor reaction chamber is preset to be adjusted from the initial pressure value P0 to the target pressure value P. f Total target pressure change rate V d ; Based on the initial pressure value P0 and the target pressure value P fThe total pressure difference between them, and the total target pressure change rate V. d The semiconductor reaction chamber is adjusted from the initial pressure value P0 to the target pressure value P. f Total time required; The total time is divided into n control cycles, each with a time length of t, where n ≥ 2; For the i-th control cycle, where i is an integer from 1 to n, pressure regulation is performed, specifically including: Obtain the actual pressure value P of the semiconductor reaction chamber at the beginning of the i-th control cycle. i-1 and the actual pressure value P at the end of the i-th control cycle i ; Based on the actual pressure value P at the beginning i-1 The actual pressure value P at the end i The actual pressure change rate V during the i-th control cycle is calculated using the time length t. i ; Calculate the actual pressure change rate V i With the total target pressure change rate V d The ratio E i ; V d / E i The set pressure change rate V for the (i+1)th control cycle i+1 ; Repeat the pressure adjustment operation, increasing i from 1 to n, so that the actual pressure value of the semiconductor reaction chamber is adjusted to the target pressure value.

[0006] In some embodiments, the formula for calculating the total time is: Where T is the total time, P f P0 is the target pressure value, V is the initial pressure value, and P0 is the initial pressure value. d The rate of change of the overall target pressure.

[0007] In some embodiments, the formula for calculating the actual pressure change rate is: Among them, V i P represents the actual rate of pressure change. i-1 and P i ...

[0008] In some embodiments, the semiconductor reaction chamber is configured to adjust the pressure inside the chamber via a pressure regulating valve; the first pressure control mode is a self-learning pressure control mode, which synchronously records the actual pressure value of the reaction chamber and the valve opening value of the pressure regulating valve corresponding to the actual pressure value at a predetermined sampling period during at least one historical process, thereby obtaining a relationship curve between the actual pressure value and the valve opening value.

[0009] In some embodiments, during the pressure regulation operation, the set pressure change rate V for the (i+1)th control cycle is obtained. i+1 Following that, it also includes: For the (i+1)th control cycle, obtain the initial valve opening value M at the beginning of the (i+1)th control cycle. i And based on the actual pressure value P at the start of the (i+1)th control cycle i The set pressure change rate V i+1 Based on the time length t, the estimated pressure value P at the end of the (i+1)th control cycle is calculated. i+1 '; The estimated pressure value P at the end of the (i+1)th control cycle i+1 Substituting the values ​​into the relationship curve, we obtain the relationship with the estimated pressure value P. i+1 'Corresponding target valve opening value M i+1 ; Calculate the target valve opening value M i+1 and the initial valve opening value M i The valve opening change rate K for the (i+1)th control cycle is calculated based on the opening difference and the time length t. i+1 ; The pressure regulating valve is controlled by the valve opening change rate K. i+1 The action causes the actual pressure in the semiconductor reaction chamber to change at the set pressure rate V during the (i+1)th control cycle. i+1 change.

[0010] In some embodiments, the formula for calculating the estimated pressure value is: Among them, P i+1 ' is the estimated pressure value at the end of the (i+1)th control cycle, P i V represents the actual pressure value at the start of the (i+1)th control cycle. i+1 The set pressure change rate is the (i+1)th control cycle, and t is the duration of each control cycle.

[0011] In some embodiments, the formula for calculating the valve opening change rate in the (i+1)th control cycle is: Among them, K i+1 M represents the rate of change of valve opening in the (i+1)th control cycle. i+1 M represents the target valve opening value. i t represents the initial valve opening value, and t represents the duration of each control cycle.

[0012] In some embodiments, the preset condition is: The actual pressure value of the semiconductor reaction chamber and the target pressure value P f The absolute value of the pressure difference and the target pressure value P f The ratio is greater than the preset ratio.

[0013] In some embodiments, the pressure control method further includes executing a second pressure control mode when the pressure difference does not meet a preset condition, wherein the second pressure control mode is a PID pressure control mode and the derivative parameter D of the PID pressure control mode is zero.

[0014] In some embodiments, the preset ratio ranges from 5% to 10%.

[0015] In some embodiments, the semiconductor reaction chamber is configured with a self-learning module and a PID module, wherein: The self-learning module is configured to record the actual pressure value of the semiconductor reaction chamber and the valve opening value of the corresponding pressure regulating valve in the first pressure control mode; the self-learning module is also configured to record the actual pressure value of the semiconductor reaction chamber, the valve opening value of the corresponding pressure regulating valve, and the PID control parameters of the corresponding PID pressure control mode in the second pressure control mode. The PID module is configured to obtain the corresponding PID control parameters from the self-learning module based on the actual pressure value of the current semiconductor reaction chamber in the second pressure control mode.

[0016] Compared with the prior art, this application has the following advantages: The pressure control method provided in this application effectively suppresses fluctuations in the pressure change rate by dividing the total time into multiple control cycles and calculating and adjusting the pressure change rate in each control cycle, thus ensuring the smoothness and stability of pressure adjustment. Specifically, by acquiring the actual pressure value in real time and dynamically adjusting the pressure change rate, the pressure adjustment process can be accurately controlled, ensuring that the actual pressure value reaches the target pressure value quickly and accurately.

[0017] The first pressure control mode of this application is a self-learning pressure control mode. By combining historical process data, a relationship curve between the actual pressure value and the valve opening value is established, thereby enabling rapid determination of the target valve opening value and improving the efficiency and accuracy of pressure control. Through the calculation of the estimated pressure value and the rate of change of the valve opening, accurate pressure control is further achieved, effectively suppressing pressure fluctuations and ensuring that the actual pressure value stably reaches the target value.

[0018] This application employs a staged pressure control method, combining a first pressure control mode (self-learning) and a second pressure control mode (PID), to adapt to pressure adjustment needs under different operating conditions. In the first pressure control mode, the uniformity and stability of the pressure adjustment process are ensured by dynamically adjusting the pressure change rate; in the second pressure control mode, PID control is used to achieve control when the pressure difference is small. This staged control method not only improves the accuracy of pressure control but also enhances the system's flexibility and reliability, providing support for the stability of semiconductor manufacturing processes and the improvement of product quality. Attached Figure Description

[0019] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort: Figure 1 This is a flowchart illustrating the process from a preset target pressure value to the execution of a pressure control mode in the pressure control method provided in this embodiment of the invention. Figure 2 A flowchart of the first pressure control mode provided in an embodiment of the present invention; Figure 3 A diagram illustrating the specific steps of pressure regulation operation in the first pressure control mode provided in an embodiment of the present invention; Figure 4 for Figure 3 A schematic diagram of the subsequent steps in the medium pressure regulation operation; Figure 5 A simplified structural diagram of the pressure control system for the semiconductor reaction chamber provided in an embodiment of the present invention; Figure 6 This is a schematic diagram of the pressure regulating valve provided in an embodiment of the present invention, showing the process of the valve going from closed to open. Detailed Implementation

[0020] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0021] In semiconductor manufacturing, pressure control within the semiconductor reaction chamber is crucial for ensuring process stability and product quality. Current technologies struggle to achieve uniform and stable pressure changes within the semiconductor reaction chamber. Fluctuations in the rate of pressure change during adjustment lead to deviations between the actual and target pressures, consequently affecting the quality and performance of semiconductor devices. Furthermore, existing technologies lack dynamic feedback and adjustment capabilities for actual pressure changes, making it difficult to adapt to complex nonlinear factors within the semiconductor reaction chamber (such as gas flow and temperature variations), further complicating pressure control.

[0022] like Figure 1 As shown, in order to solve the above problems, this application provides a pressure control method for a semiconductor reaction chamber. This pressure control method is applicable to semiconductor reaction chambers that require accurate and stable pressure control, including but not limited to reaction chambers used in deposition processes, etching processes, pre-cleaning processes, etc.

[0023] The pressure control method includes: S110, Preset the target pressure value P of the semiconductor reaction chamber. f The actual pressure value of the semiconductor reaction chamber is acquired in real time; the target pressure value P f The target pressure value P is the ideal pressure value that the semiconductor reaction chamber needs to achieve during the process. f The settings are configured according to specific process requirements; the actual pressure value inside the semiconductor reaction chamber is monitored in real time by a pressure sensor; S120. Determine the difference between the actual pressure value and the target pressure value P. f Whether the pressure difference between them meets the preset conditions; when the pressure difference meets the preset conditions, the first pressure control mode is executed.

[0024] like Figure 2 As shown, the first pressure control mode includes the following steps: S131. Using the initial actual pressure value of the semiconductor reaction chamber as the initial pressure value P0, the semiconductor reaction chamber is preset to be adjusted from the initial pressure value P0 to the target pressure value P. f Total target pressure change rate V d The total target pressure change rate V d The settings shall be determined by those skilled in the art based on process requirements and equipment performance. S132, Based on the initial pressure value P0 and the target pressure value P f The total pressure difference between them, and the total target pressure change rate V. d The semiconductor reaction chamber is adjusted from the initial pressure value P0 to the target pressure value P. f Total time required; The formula for calculating the total time is: Where T is the total time, P f P0 is the target pressure value, V is the initial pressure value, and P0 is the initial pressure value. d The rate of change of the overall target pressure; S133. The total time is divided into n control cycles, each with a time length of t, where n ≥ 2; the number of control cycles n and the time length t are set by those skilled in the art according to process requirements and equipment response speed. S134. For the i-th control cycle, where i is an integer from 1 to n, perform pressure regulation operation; S135. Repeat the pressure adjustment operation of step S134, increasing i from 1 to n, so that the actual pressure value of the semiconductor reaction chamber is adjusted to the target pressure value.

[0025] Among them, such as Figure 3 As shown, the pressure regulation operation in step S134 specifically includes: a) Obtain the actual pressure value P of the semiconductor reaction chamber at the beginning of the i-th control cycle. i-1 and the actual pressure value P at the end of the i-th control cycle i ; b) Based on the actual pressure value P at the beginning i-1 The actual pressure value P at the end i The actual pressure change rate V during the i-th control cycle is calculated using the time length t. i ; The formula for calculating the actual pressure change rate is: Among them, Vi P represents the actual rate of pressure change. i-1 and P i , respectively, are the actual pressure values ​​at the beginning of the i-th control cycle and the actual pressure values ​​at the end of the i-th control cycle, and t is the time length of each control cycle; c) Calculate the actual pressure change rate V i With the rate of change of total target pressure V d The ratio E i ; d) V d / E i The set pressure change rate V for the (i+1)th control cycle i+1。

[0026] In step S135, the actual pressure value of the semiconductor reaction chamber is gradually adjusted to the target pressure value P by iteratively performing pressure regulation operations. f Specifically, the process includes: First, during the first control cycle, the pressure change rate is set to V. d The actual pressure value is P1, and the actual pressure change rate V1 can be calculated using the formula V1 = (P1-P0) / t; subsequently, the actual pressure change rate V1 and the total target pressure change rate V are calculated. d The ratio E1, i.e., E1 = V1 / V d Based on this ratio E1, the set pressure change rate for the second control cycle is adjusted to V. d / E1; Next, during the second control cycle, the actual pressure value is P2, and the actual pressure change rate V2 can be calculated using the formula V2 = (P2 - P1) / t; similarly, the actual pressure change rate V2 and the total target pressure change rate V are calculated. d The ratio E2, i.e., E2 = V2 / V d Based on this ratio E2, the set pressure change rate for the third control cycle is adjusted to V. d / E2; Similarly, for the i-th control cycle (i being an integer from 1 to n), the set pressure change rate is adjusted based on the ratio of the actual pressure change rate of the previous control cycle to the total target pressure change rate; specifically, the set pressure change rate V for the (i+1)-th control cycle... i+1 It can be obtained through formula V i+1 =V d / E i The calculation shows that E i =V i / V d V i =(Pi -P i-1 ) / t; Through the above iterative process, the actual pressure value of the semiconductor reaction chamber gradually approaches the target pressure value P. f Until the end of the nth control cycle, the actual pressure value P n To reach the target pressure value P f .

[0027] Through the aforementioned technical means, this application achieves uniformity, stability, and adaptability in the pressure adjustment process. Specifically, by dividing the total time into multiple control cycles and dynamically calculating and adjusting the pressure change rate within each cycle, fluctuations in the pressure change rate can be effectively suppressed, ensuring the smoothness of pressure adjustment. Simultaneously, by acquiring the actual pressure value in real time and dynamically adjusting the pressure change rate, the pressure adjustment process can be accurately controlled, ensuring that the actual pressure value quickly and accurately reaches the target pressure value. Furthermore, through the dynamic adjustment mechanism, it can adapt to differences between different initial and target pressure values, as well as nonlinear factors that may exist within the semiconductor reaction chamber (such as gas flow, temperature changes, etc.), thereby achieving stable pressure control under various complex operating conditions.

[0028] Preferably, the semiconductor reaction chamber is configured to adjust the pressure inside the chamber via a pressure regulating valve; the first pressure control mode is a self-learning pressure control mode, which synchronously records the actual pressure value of the reaction chamber and the valve opening value of the pressure regulating valve corresponding to the actual pressure value at a predetermined sampling period during at least one historical process, thereby obtaining a relationship curve between the actual pressure value and the valve opening value; based on the relationship curve between the actual pressure value and the valve opening value, the target valve opening value can be quickly determined, improving the efficiency and accuracy of pressure control; like Figure 4 As shown, in the pressure regulation operation, the set pressure change rate V of the (i+1)th control cycle is obtained. i+1 Following that, it also includes: e) For the (i+1)th control cycle, obtain the initial valve opening value M at the beginning of the (i+1)th control cycle. i And based on the actual pressure value P at the start of the (i+1)th control cycle i The set pressure change rate V i+1 Based on the time length t, the estimated pressure value P at the end of the (i+1)th control cycle is calculated. i+1 '; The formula for calculating the estimated pressure value is as follows: Among them, P i+1' is the estimated pressure value at the end of the (i+1)th control cycle, P i V represents the actual pressure value at the start of the (i+1)th control cycle. i+1 The set pressure change rate is the (i+1)th control cycle, and t is the duration of each control cycle. f) The estimated pressure value P at the end of the (i+1)th control cycle. i+1 Substituting the values ​​into the relationship curve, we obtain the relationship with the estimated pressure value P. i+1 'Corresponding target valve opening value M i+1 ; g) Calculate the target valve opening value M i+1 and the initial valve opening value M i The valve opening change rate K for the (i+1)th control cycle is calculated based on the opening difference and the time length t. i+1 ; The formula for calculating the valve opening change rate in the (i+1)th control cycle is: Among them, K i+1 M represents the rate of change of valve opening in the (i+1)th control cycle. i+1 M represents the target valve opening value. i The initial valve opening value is given by t, and t is the duration of each control cycle. h) Control the pressure regulating valve at a valve opening change rate K i+1 The action causes the actual pressure in the semiconductor reaction chamber to change at the set pressure rate V during the (i+1)th control cycle. i+1 change.

[0029] The aforementioned technical means, through the calculation of the estimated pressure value and the rate of change of valve opening, can achieve high-precision pressure control and effectively suppress pressure fluctuations, ensuring that the actual pressure value stably reaches the target value.

[0030] Optionally, the preset condition is: the actual pressure value of the semiconductor reaction chamber and the target pressure value P. f The absolute value of the pressure difference and the target pressure value P f The ratio is greater than the preset ratio.

[0031] Optionally, the preset ratio can be in the range of 5% to 10%.

[0032] Optionally, step S120 of the pressure control method further includes: When the pressure difference does not meet the preset conditions, a second pressure control mode is executed. The second pressure control mode is a PID pressure control mode. PID pressure control is existing technology and will not be described in detail here.

[0033] Optionally, in step S120, the actual pressure value and the target pressure value P are compared. f The determination of whether the pressure difference between them meets the preset conditions is a real-time judgment; For example, in the initial stage, the actual pressure value and the target pressure value P f The pressure difference between them meets the preset conditions, therefore the first pressure control mode is selected; During the subsequent pressure adjustment process using the first pressure control mode, the actual pressure value and the target pressure value P are compared. f If the pressure difference between the two does not meet the preset conditions, the system will switch from the first pressure control mode to the second pressure control mode.

[0034] The first pressure control mode dynamically adjusts the rate of pressure change to ensure the uniformity and stability of the pressure adjustment process; the second pressure control mode uses PID control to achieve precise control when the pressure difference is small. Through this phased pressure control method, this technical solution effectively improves the accuracy and stability of pressure control, adapts to pressure adjustment needs under different operating conditions, and supports the improvement of product quality.

[0035] Optionally, the derivative parameter D of the PID pressure control mode is zero.

[0036] Optionally, the semiconductor reaction chamber is configured with a self-learning module and a PID module, wherein: The self-learning module is configured to record the actual pressure value of the semiconductor reaction chamber and the valve opening value of the corresponding pressure regulating valve in the first pressure control mode; the self-learning module is also configured to record the actual pressure value of the semiconductor reaction chamber, the valve opening value of the corresponding pressure regulating valve, and the PID control parameters (such as proportional parameter P and integral parameter I) of the corresponding PID pressure control mode in the second pressure control mode. The PID module is configured to, in the second pressure control mode, obtain the corresponding PID control parameters from the self-learning module based on the actual pressure value of the current semiconductor reaction chamber, and execute the PID control algorithm based on the PID control parameters to adjust the valve opening of the pressure regulating valve to ensure that the actual pressure value is stable at the target value.

[0037] Optional, such as Figure 5 As shown, this application also provides a pressure control system for a semiconductor reaction chamber, which employs the pressure control method described in this application to regulate the internal pressure of the semiconductor reaction chamber.

[0038] The pressure control system includes a negative pressure pump 104, a pressure regulating valve 105, a mass flow controller 107, a semiconductor reaction chamber 108, a human-machine interface terminal 200, an industrial PC 201, a PID module 202, a self-learning module 203, a motor driver 206, a pressure sensor 209, and a regulator slave station 210.

[0039] The mass flow controller 107 is connected to the semiconductor reaction chamber 108 via a pipeline for precise control of the process gas flow rate. The pressure regulating valve 105 is connected to both the semiconductor reaction chamber 108 and the negative pressure pump 104 for regulating the pressure within the reaction chamber. The process gas is introduced into the semiconductor reaction chamber 108 via the mass flow controller 107, and after completing the reaction within the semiconductor reaction chamber 108, it flows out through the pressure regulating valve 105 and is finally drawn out and discharged from the system by the negative pressure pump 104.

[0040] The pressure sensor 209 is mounted on the semiconductor reaction chamber 108 and is connected to the industrial PC 201 via an Ethercat bus. The pressure sensor 209 is used to collect the actual pressure value inside the semiconductor reaction chamber 108 in real time and transmit the pressure signal to the industrial PC 201 to achieve real-time monitoring of the reaction chamber pressure.

[0041] The industrial PC 201 is connected to the self-learning module 203, which is connected to both the regulator slave station 210 and the PID module 202. After receiving the pressure signal from the pressure sensor 209, the industrial PC 201, in conjunction with the parameters provided by the self-learning module 203, calculates the motor drive signal through the regulator slave station 210 and transmits this signal to the motor driver 206 via the EtherCAT bus. The motor driver 206 adjusts the opening of the pressure regulating valve 105 based on the received motor drive signal, thereby controlling the internal pressure of the semiconductor reaction chamber 108.

[0042] The human-machine interface 200 is connected to the industrial PC 201 and is used to preset the target pressure value of the semiconductor reaction chamber 108 during the process and transmit the target pressure value to the industrial PC 201.

[0043] The pressure control system described in this application integrates components such as a negative pressure pump, pressure regulating valve, mass flow controller, pressure sensor, industrial PC, self-learning module, PID module, motor driver, and regulator slave station to achieve precise and stable control of the internal pressure of the semiconductor reaction chamber, effectively improving the reliability and consistency of the semiconductor manufacturing process.

[0044] The specific selection of the pressure regulating valve 105 can be flexibly chosen by those skilled in the art based on actual production needs. For example, such as Figure 6 As shown, Figure 6 This paper demonstrates a typical pressure regulating valve structure, which mainly includes a valve plate, a rotating shaft, and a motor driver. Its working principle is as follows: the motor driver receives a motor drive signal, drives the rotating shaft to rotate, thereby moving the valve plate and regulating the valve opening. Figure 6 The diagram, from right to left, shows the process of a valve going from fully closed to fully open. Specifically, as the motor driver moves, the valve plate gradually rotates, increasing the valve opening until it reaches its maximum value on the far left.

[0045] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. Additionally, the term "connection" in this document indicates a direct connection between A and B, or an indirect connection between A and B, such as an indirect connection between A and B via C, or even via C and D, or more components. The connection between A and B can be integral or separate, detachable or fixed. The term "optional" in this document indicates that the technical feature can be combined with or not combined with any feature in the document.

[0046] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A method for controlling the pressure of a semiconductor reaction chamber, characterized in that, The pressure control method includes: The target pressure value P of the semiconductor reaction chamber is preset. f And obtain the actual pressure value of the semiconductor reaction chamber; Determine the difference between the actual pressure value and the target pressure value P. f Whether the pressure difference between them meets the preset conditions, and execute the first pressure control mode when the pressure difference meets the preset conditions; The first pressure control mode includes the following steps: The initial actual pressure value of the semiconductor reaction chamber is taken as the initial pressure value P0, and the semiconductor reaction chamber is preset to be adjusted from the initial pressure value P0 to the target pressure value P. f Total target pressure change rate V d ; Based on the initial pressure value P0 and the target pressure value P f The total pressure difference between them, and the total target pressure change rate V. d The semiconductor reaction chamber is adjusted from the initial pressure value P0 to the target pressure value P. f Total time required; The total time is divided into n control cycles, each with a time length of t, where n ≥ 2; For the i-th control cycle, where i is an integer from 1 to n, pressure regulation is performed, specifically including: Obtain the actual pressure value P of the semiconductor reaction chamber at the beginning of the i-th control cycle. i-1 and the actual pressure value P at the end of the i-th control cycle i ; Based on the actual pressure value P at the beginning i-1 The actual pressure value P at the end i The actual pressure change rate V during the i-th control cycle is calculated using the time length t. i ; Calculate the actual pressure change rate V i With the total target pressure change rate V d The ratio E i ; V d / E i The set pressure change rate V for the (i+1)th control cycle i+1 ; Repeat the pressure adjustment operation, increasing i from 1 to n, so that the actual pressure value of the semiconductor reaction chamber is adjusted to the target pressure value.

2. The pressure control method for the semiconductor reaction chamber as described in claim 1, characterized in that, The formula for calculating the total time is: , Where T is the total time, P f P0 is the target pressure value, V is the initial pressure value, and P0 is the initial pressure value. d The rate of change of the overall target pressure.

3. The pressure control method for the semiconductor reaction chamber as described in claim 1, characterized in that, The formula for calculating the actual pressure change rate is: , Among them, V i P represents the actual rate of pressure change. i-1 and P i ...

4. The pressure control method for a semiconductor reaction chamber as described in claim 1, characterized in that, The semiconductor reaction chamber is configured to adjust the pressure inside the chamber via a pressure regulating valve; the first pressure control mode is a self-learning pressure control mode, which synchronously records the actual pressure value of the reaction chamber and the valve opening value of the pressure regulating valve corresponding to the actual pressure value at a predetermined sampling period during at least one historical process, thereby obtaining a relationship curve between the actual pressure value and the valve opening value.

5. The pressure control method for the semiconductor reaction chamber as described in claim 4, characterized in that, In the pressure regulation operation, the set pressure change rate V of the (i+1)th control cycle is obtained. i+1 Following that, it also includes: For the (i+1)th control cycle, obtain the initial valve opening value M at the beginning of the (i+1)th control cycle. i And based on the actual pressure value P at the start of the (i+1)th control cycle i The set pressure change rate V i+1 Based on the time length t, the estimated pressure value P at the end of the (i+1)th control cycle is calculated. i+1 '; The estimated pressure value P at the end of the (i+1)th control cycle i+1 Substituting the values ​​into the relationship curve, we obtain the relationship with the estimated pressure value P. i+1 'Corresponding target valve opening value M i+1 ; Calculate the target valve opening value M i+1 and the initial valve opening value M i The valve opening change rate K for the (i+1)th control cycle is calculated based on the opening difference and the time length t. i+1 ; The pressure regulating valve is controlled by the valve opening change rate K. i+1 The action causes the actual pressure in the semiconductor reaction chamber to change at the set pressure rate V during the (i+1)th control cycle. i+1 change.

6. The pressure control method for a semiconductor reaction chamber as described in claim 5, characterized in that, The formula for calculating the estimated pressure value is as follows: ， Among them, P i+1 ' is the estimated pressure value at the end of the (i+1)th control cycle, P i V represents the actual pressure value at the start of the (i+1)th control cycle. i+1 The set pressure change rate is the (i+1)th control cycle, and t is the duration of each control cycle.

7. The pressure control method for a semiconductor reaction chamber as described in claim 5, characterized in that, The formula for calculating the valve opening change rate in the (i+1)th control cycle is: ， Among them, K i+1 M represents the rate of change of valve opening in the (i+1)th control cycle. i+1 M represents the target valve opening value. i t represents the initial valve opening value, and t represents the duration of each control cycle.

8. The pressure control method for a semiconductor reaction chamber as described in claim 1, characterized in that, The preset conditions are: The actual pressure value of the semiconductor reaction chamber and the target pressure value P f The absolute value of the pressure difference and the target pressure value P f The ratio is greater than the preset ratio.

9. The pressure control method for a semiconductor reaction chamber as described in claim 8, characterized in that, The pressure control method further includes executing a second pressure control mode when the pressure difference does not meet the preset conditions. The second pressure control mode is a PID pressure control mode, and the derivative parameter D of the PID pressure control mode is zero.

10. The pressure control method for a semiconductor reaction chamber as described in claim 8, characterized in that, The preset ratio ranges from 5% to 10%.

11. The pressure control method for a semiconductor reaction chamber as described in claim 9, characterized in that, The semiconductor reaction chamber is equipped with a self-learning module and a PID module, wherein: The self-learning module is configured to record the actual pressure value of the semiconductor reaction chamber and the valve opening value of the corresponding pressure regulating valve in the first pressure control mode; the self-learning module is also configured to record the actual pressure value of the semiconductor reaction chamber, the valve opening value of the corresponding pressure regulating valve, and the PID control parameters of the corresponding PID pressure control mode in the second pressure control mode. The PID module is configured to obtain the corresponding PID control parameters from the self-learning module based on the actual pressure value of the current semiconductor reaction chamber in the second pressure control mode.

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