Trans-perovskite solar cell with villiaumite-containing interface modification layer and preparation method thereof

Abstract

The invention discloses a trans-perovskite solar cell with a villiaumite-containing interface modification layer and a preparation method of the trans-perovskite solar cell, and belongs to the technical field of perovskite photovoltaic devices. The trans-perovskite solar cell sequentially comprises a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer and a metal electrode from bottom to top. Wherein the interface modification layer is formed by depositing 1-fluoropyridine trifluoromethane sulfonate or 2-fluoro-alpha-methyl-4-biphenyl acetic acid or trifluoromethanesulfonic acid 2, 2-difluoroethyl ester through a solution method and carrying out in-situ polymerization on the 1-fluoropyridine trifluoromethane sulfonate or the 2-fluoro-alpha-methyl-4-biphenyl acetic acid or the trifluoromethanesulfonic acid 2, 2-difluoroethyl ester. The modification layer has the functions of molecular-level passivation and polymer network stabilization, and provides an efficient electron extraction channel at the same time. According to the invention, long-acting stability of interface passivation and efficient and smooth charge transfer are realized through the fluorine-containing material, the non-radiative recombination loss is remarkably reduced, and the photoelectric conversion efficiency, the fill factor and the long-term operation stability of the trans-perovskite solar cell are synchronously improved.

Description

Technical Field

[0001] This invention relates to the field of perovskite photovoltaic device technology, specifically to an inverted perovskite solar cell with a fluorine-containing salt interface modification layer and its preparation method. Background Technology

[0002] With the rise of perovskite photovoltaics, organic-inorganic hybrid perovskite solar cells have achieved a leap in photoelectric conversion efficiency in just one decade due to their superior photoelectric properties, such as high absorption coefficient, long carrier diffusion length, and flexibly tunable optical bandgap. The certified efficiency of single-junction devices has exceeded 27%, demonstrating enormous potential to surpass traditional crystalline silicon technology. However, their large-scale commercialization is still limited by key bottlenecks such as complex fabrication processes, dependence on expensive components (such as Spiro-OMeTAD), and insufficient long-term environmental stability. Meanwhile, the efficiency of crystalline silicon solar cells, which dominate the market, is approaching its theoretical limit of approximately 29.4%. Against this backdrop, high-efficiency perovskite / silicon tandem cell architectures have attracted considerable attention due to their ability to break through the single-junction efficiency limit. To adapt to the requirements of tandem architectures and overcome the inherent stability and cost barriers of perovskite, developing perovskite sub-cell structures that combine high stability, low cost, and excellent photoelectric performance has become a top priority in current research.

[0003] Among various perovskite solar cell structures, planar inverted perovskite solar cells are considered an ideal choice for achieving high-efficiency perovskite / silicon tandem cells due to their simple fabrication process, low cost, weak hysteresis effect, and relatively excellent long-term stability. After more than a decade of development, the steady-state certified efficiency of inverted pin PSCs has exceeded 27%. Despite these numerous advantages, the core issues hindering further performance breakthroughs and practical application are becoming increasingly prominent. One is the bulk defects in the perovskite light-absorbing layer; the other is the non-radiative recombination loss at the perovskite / charge transport layer interface. These problems severely limit the open-circuit voltage and fill factor of the device and affect its long-term stability. Summary of the Invention

[0004] To address the aforementioned shortcomings of existing technologies, the present invention aims to provide an inverted perovskite solar cell with a fluorine-containing salt interface modification layer and its preparation method, thereby achieving passivation of interface defects, improvement of carrier transport efficiency, performance enhancement, and increased efficiency and device stability of perovskite solar cells.

[0005] The technical solution of the present invention to solve the above technical problems is as follows: a reverse perovskite solar cell with a fluorine-containing salt interface modification layer is provided, comprising a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer and a metal electrode; The interface modification layer is formed by solution deposition and in-situ polymerization of the interface modification material; the interface modification layer can be located between the hole transport layer and the perovskite light-absorbing layer, or between the perovskite light-absorbing layer and the electron transport layer, or between the hole transport layer and the perovskite light-absorbing layer, or between the perovskite light-absorbing layer and the electron transport layer; the interface modification material is 1-fluoropyridine trifluoromethanesulfonate or 2-fluoro-α-methyl-4-biphenylacetic acid or 2,2-difluoroethyl trifluoromethanesulfonate.

[0006] Furthermore, the transparent conductive substrate is conductive glass; the hole transport layer is a nickel oxide / self-assembled molecule combination hole transport layer, with the self-assembled molecule being [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid; the perovskite light-absorbing layer is an all-inorganic perovskite or an organic-inorganic metal halide perovskite; and the electron transport layer is PCBM and C 60 At least one of the following: the buffer layer is BCP; the metal electrode is a gold electrode, a silver electrode, or a copper electrode.

[0007] Furthermore, the conductive glass is indium tin oxide or fluorine-doped tin dioxide.

[0008] This invention provides a method for preparing the above-mentioned inverted perovskite solar cell, wherein the preparation method is any one of the following: (A1) The interface modification layer is located between the hole transport layer and the perovskite light-absorbing layer: from bottom to top, a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer and a metal electrode are stacked sequentially. (A2) The interface modification layer is located between the perovskite light-absorbing layer and the electron transport layer: from bottom to top, a transparent conductive substrate, a hole transport layer, a perovskite light-absorbing layer, an interface modification layer, an electron transport layer, a buffer layer, and a metal electrode are stacked sequentially. (A3) The interface modification layer is located between the hole transport layer and the perovskite light-absorbing layer, and between the perovskite light-absorbing layer and the electron transport layer: from bottom to top, a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode are stacked sequentially.

[0009] Further, the specific steps of (A1) are as follows: A nickel oxide solution is spread evenly on a transparent conductive substrate, spin-coated for 20-40 seconds, and then annealed at 90-150°C for 5-20 minutes to obtain a nickel oxide film; then, a self-assembled molecular layer solution is spread evenly on the nickel oxide film, spin-coated for 20-40 seconds in an inert gas environment, and then annealed at 80-130°C for 5-20 minutes to obtain a hole transport layer; an interface modification material is dissolved in isopropanol solution to prepare a solution, which is then spread evenly on the hole transport layer and spin-coated for 10-40 seconds. Then, heat and anneal at 50-120℃ for 5-20 min to obtain an interface modification layer; then, spread the perovskite precursor solution on the interface modification layer, first rotating at 500-2000 rpm for 5-20 s, then rotating at 3000-7000 rpm for 20-60 s; after film formation, heat and anneal at 70-180℃ for 5-120 min to obtain a perovskite film; spread the PCBM solution on the perovskite film, spin-coat for 10-40 s, then heat and anneal at 50-120℃ for 5-20 min, or apply C... 60 An electron transport layer is prepared by evaporating BCP powder at a temperature of 400℃-600℃ and an evaporation rate of 0.1-1 Å / s for 10-40 nm. Then, a BCP solution is spread on the electron transport layer and spin-coated for 10-40 s, or a buffer layer is prepared by evaporating BCP powder at a temperature of 150℃-300℃ and an evaporation rate of 0.1-1 Å / s for 5-15 nm. Finally, a metal electrode is deposited on the buffer layer to obtain the final product.

[0010] Further, the specific steps of (A2) are as follows: A nickel oxide solution is spread evenly on a transparent conductive substrate, spin-coated for 20-40 seconds, and then annealed at 90-150°C for 5-20 minutes to obtain a nickel oxide film; then, a self-assembled molecular layer solution is spread evenly on the nickel oxide film, spin-coated in an inert gas environment for 20-40 seconds, and then annealed at 80-130°C for 5-20 minutes to obtain a hole transport layer; then, a perovskite precursor solution is spread evenly on the hole transport layer, first rotated at 500-2000 rpm for 5-20 seconds, and then... Rotate at 3000-7000 rpm for 20-60 seconds; after film formation, anneal at 70-180℃ for 5-120 minutes to obtain a perovskite film; dissolve the interface modification material in isopropanol solution to prepare an interface modification layer solution, then spread it evenly on the perovskite film, coat for 10-40 seconds, and then anneal at 50-120℃ for 5-20 minutes to obtain an interface modification layer; spread the PCBM solution evenly on the interface modification layer, spin-coat for 10-40 seconds, and then anneal at 50-120℃ for 5-20 minutes, or... 60An electron transport layer is prepared by evaporating BCP powder at a temperature of 400℃-600℃ and an evaporation rate of 0.1-1 Å / s for 10-40 nm. Then, a BCP solution is spread on the electron transport layer and spin-coated for 10-40 s, or a buffer layer is prepared by evaporating BCP powder at a temperature of 150℃-300℃ and an evaporation rate of 0.1-1 Å / s for 5-15 nm. Finally, a metal electrode is deposited on the buffer layer to obtain the final product.

[0011] Further, the specific steps of (A3) are as follows: A nickel oxide solution is spread evenly on a transparent conductive substrate, spin-coated for 20-40 seconds, and then annealed at 90-150°C for 5-20 minutes to obtain a nickel oxide film; then, a self-assembled molecular layer solution is spread evenly on the nickel oxide film, spin-coated for 20-40 seconds in an inert gas environment, and then annealed at 80-130°C for 5-20 minutes to obtain a hole transport layer; an interface modification material is dissolved in isopropanol solution to prepare an interface modification layer solution, which is then spread evenly on the hole transport layer, coated for 10-40 seconds, and then annealed at 50-120°C for 5-20 minutes to obtain the upper interface. Modification layer; then the perovskite precursor solution is spread evenly on the upper interface modification layer, first rotated at 500-2000 rpm for 5-20 s, then rotated at 3000-7000 rpm for 20-60 s; after film formation, it is heated and annealed at 70-180℃ for 5-120 min to obtain the perovskite film; then the interface modification layer solution is spread evenly on the perovskite film, coated for 10-40 s, and then heated and annealed at 50-120℃ for 5-20 min to obtain the lower interface modification layer; the PCBM solution is spread evenly on the lower interface modification layer, spin-coated for 10-40 s, and then heated and annealed at 50-120℃ for 5-20 min or C 60 An electron transport layer is prepared by evaporating BCP powder at a temperature of 400℃-600℃ and an evaporation rate of 0.1-1 Å / s for 10-40 nm. Then, a BCP solution is spread on the electron transport layer and spin-coated for 10-40 s, or a buffer layer is prepared by evaporating BCP powder at a temperature of 150℃-300℃ and an evaporation rate of 0.1-1 Å / s for 5-15 nm. Finally, a metal electrode is deposited on the buffer layer to obtain the final product.

[0012] Furthermore, the transparent conductive substrate needs to be pretreated, specifically including the following steps: the transparent conductive substrate material is placed in ultrapure water, acetone and alcohol in sequence, ultrasonically dried, and then treated with ozone.

[0013] Furthermore, the preparation method of the perovskite precursor solution includes the following steps: dissolving CdCl2, MACl, MAI, CsI, PbCl2, FAI, and PbI2 in a mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide to obtain the solution.

[0014] Furthermore, the perovskite precursor solution is prepared as follows: CdCl2, MACl, MAI, CsI, PbCl2, FAI, and PbI2 are dissolved in a mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide to obtain the solution.

[0015] Furthermore, the mass ratio of CdCl2, MACl, MAI, CsI, PbCl2, FAI, and PbI2 is 0.1-1:2-10:10-15:15-30:18-30:200-300:600-800; and the volume ratio of N,N-dimethylformamide and dimethyl sulfoxide is 2-10:1.

[0016] (1) The present invention has the following beneficial effects: The present invention uses 1-fluoropyridine trifluoromethanesulfonate, 2-fluoro-α-methyl-4-biphenylacetic acid, or 2,2-difluoroethyl trifluoromethanesulfonate as interface modification materials. Using them as interface modification layers can enhance the carrier extraction capability, improve the crystal quality of the perovskite light-absorbing layer, reduce the non-radiative recombination of perovskite, inhibit water and oxygen permeation, and significantly improve the efficiency and stability of perovskite solar cells.

[0017] (2) The mechanisms of action of 1-fluoropyridine trifluoromethanesulfonate, 2-fluoro-α-methyl-4-biphenylacetic acid, or 2,2-difluoroethyl trifluoromethanesulfonate as interface modification materials are as follows: ①1-Fluoropyridine trifluoromethane sulfonate is characterized by its unique bifunctional molecular design: Molecular-level defect passivation: The fluorine-substituted pyridinium cation in 1-fluoropyridine trifluoromethane sulfonate can act as a strong Lewis base, effectively passivating uncoordinated Pb²⁺ on the perovskite surface. + Defects, suppressing nonradiative recombination; In-situ polymerization forms a stable conductive network: The trifluoromethanesulfonate anion in 1-fluoropyridine trifluoromethanesulfonate is a mild and efficient polymerization initiator. Under subsequent mild heat annealing or phototreatment conditions, it can induce in-situ polymerization of fluoropyridine groups in adjacent interface modification materials, forming a conjugated polypyridine network. This polymer network not only firmly anchors to the perovskite surface, providing a hydrophobic barrier and significantly enhancing interfacial stability and preventing the desorption of passivated molecules, but its π-π conjugated structure also provides efficient electron extraction and transport channels, effectively avoiding the charge transport blockage problem caused by traditional polymer insulating layers.

[0018] ②2-Fluoro-α-methyl-4-biphenylacetic acid is a small molecule characterized by a carboxylic acid anchoring group, a conjugated aromatic skeleton, and fluorine substitution. As an interface modification material for perovskite solar cells, its main working mechanism is similar to that of carboxylic acid-based self-assembled monolayers: the carboxyl groups can adsorb onto the surface of transparent conductive oxides or metal oxides, forming a dense, ultrathin modification layer. This reduces the density of trapped states at the interface, suppresses non-radiative recombination, and improves the wettability and nucleation uniformity of the upper perovskite film. The fluorine atoms and hydrophobic aromatic skeleton in the molecular structure help improve the density and hydrophobicity of the interface layer, which can, to some extent, inhibit water molecule erosion and halide ion migration, thus enhancing the environmental stability of the device.

[0019] ③ When 2,2-difluoroethyl trifluoromethanesulfonate is used as an interface modification material for perovskite solar cells, it usually forms an organic thin layer with hydrophobic and dipole properties on the surface of the perovskite or charge transport layer, thereby regulating the interface energy level, enhancing moisture resistance, and assisting in defect passivation at specific coordination sites.

[0020] (3) The efficiency of the inverted perovskite solar cell prepared by the present invention has been significantly improved, with the highest photoelectric conversion efficiency being 26.12%, which is 12% higher than that of the inverted perovskite solar cell without passivation treatment. Attached Figure Description

[0021] Figure 1 These are schematic diagrams of the inverted perovskite solar cells in Embodiments 1, 4, and 6 of the present invention. Figure 2 These are schematic diagrams of the inverted perovskite solar cells in Embodiments 2, 5, and 7 of the present invention. Figure 3 This is a schematic diagram of the structure of the inverted perovskite solar cell in Embodiments 3 and 8-16 of the present invention; Figure 4 This is a schematic diagram of the structure of the inverted perovskite solar cell of Comparative Examples 1-2 of the present invention; Figure 5 These are SEM images of the perovskite light-absorbing layer films of Comparative Example 1 and Examples 1-3 of the present invention; Figure 6 The JV curves are for Comparative Example 1 and Examples 1-3 of the present invention. Detailed Implementation

[0022] The examples given below are for illustrative purposes only and are not intended to limit the scope of the invention. Unless otherwise specified, conditions in the examples are performed under standard conditions or as recommended by the manufacturer. Reagents or instruments whose manufacturers are not specified are all commercially available products.

[0023] Example 1: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) Indium tin oxide conductive glass (ITO) was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-PACz) powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 0.5 mg cadmium chloride (CdCl2), 5.4 mg potassium chloride (MACl), 12.7 mg potassium iodide (MAI), 20.8 mg cesium iodide (CsI), 22.3 mg lead chloride (PbCl2), 247.6 mg methyl iodide (FAI) and 737.6 mg lead iodide (PbI2) in a mixed solvent of 800 μL N,N-dimethylformamide (DMF) and 200 μL dimethyl sulfoxide (DMSO) to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the hole transport layer prepared in step (2), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (4) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder (PyFOTf) in isopropanol solution to prepare a 0.4 mg / mL PyFOTf solution, spread it on the perovskite light-absorbing layer obtained in step (3), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 70 °C for 5 min to obtain the interface modification layer; (5) Dissolve [6,6]-phenyl-C61-butyrate methyl ester (PCBM) powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the interface modification layer in step (4), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (6) Dissolve 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) powder in isopropanol solution to prepare a 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (5) and spin coat it at 4000 rpm for 25 s to obtain a buffer layer. (7) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (6) to obtain (see schematic diagram). Figure 1 ).

[0024] Example 2: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) Fluorine-doped tin dioxide conductive glass (FTO) was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder (PyFOTf) in isopropanol solution to prepare a 0.4 mg / mL PyFOTf solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 70 °C for 5 min to obtain the interface modification layer; (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat it for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the perovskite light-absorbing layer in step (4), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain the electron transport layer. (6) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (5) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (7) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (6) to obtain (see schematic diagram). Figure 2 ).

[0025] Example 3: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder (PyFOTf) in isopropanol solution to prepare a 0.4 mg / mL PyFOTf solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 70 °C for 5 min to obtain the lower interface modification layer; (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Spread the PyFOTf solution on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 70°C for 5 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0026] Example 4: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. XSolution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 20 s, and then annealed at 90 °C for 5 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 20 seconds under nitrogen or argon atmosphere, followed by annealing at 80°C for 5 minutes to obtain a hole transport layer. (3) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the hole transport layer prepared in step (2), rotate it at 500 rpm for 20 s, and then rotate it at 3000 rpm for 60 s. After film formation, place it on a hot stage at 70℃ and heat it for 120 min to obtain a perovskite light-absorbing layer. (4) Dissolve 2-fluoro-α-methyl-4-biphenylacetic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (3), spin coat it at 4000 rpm for 10 s, and then heat and anneal it at 50 °C for 20 min to obtain the interface modification layer. (5) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the interface modification layer in step (4), spin coat at 4000 rpm for 10 s, and then heat and anneal at 50 °C for 20 min to obtain an electron transport layer. (6) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (5) and spin coat at 4000 rpm for 10 s to obtain a buffer layer. (7) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (6) to obtain (see schematic diagram). Figure 1 ).

[0027] Example 5: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 40 s, and then annealed at 150 °C for 10 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 40 s under nitrogen or argon atmosphere, followed by heating and annealing at 130℃ for 20 min to obtain a hole transport layer. (3) Dissolve 2-fluoro-α-methyl-4-biphenylacetic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 40 s, and then heat and anneal it at 120 °C for 5 min to obtain the interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the interface modification layer prepared in step (3), rotate it at 2000 rpm for 5 s, and then rotate it at 7000 rpm for 20 s. After film formation, place it on a hot stage at 180℃ and heat it for 5 min to obtain a perovskite light-absorbing layer. (5) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the perovskite light-absorbing layer in step (4), spin coat at 4000 rpm for 40 s, and then heat and anneal at 120 °C for 5 min to obtain the electron transport layer. (6) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (5) and spin coat at 4000 rpm for 40 s to obtain a buffer layer. (7) A gold electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (6) to obtain (see schematic diagram). Figure 2 ).

[0028] Example 6: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the hole transport layer prepared in step (2), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (4) Dissolve 2,2-difluoroethyl trifluoromethanesulfonic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (3), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100℃ for 10 min to obtain the interface modification layer. (5) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the interface modification layer in step (4), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (6) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (5) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (7) A copper electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (6) to obtain (see schematic diagram). Figure 1 ).

[0029] Example 7: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) FTO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 2,2-difluoroethyl trifluoromethanesulfonic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100℃ for 10 min to obtain the interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat it for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the perovskite light-absorbing layer in step (4), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain the electron transport layer. (6) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (5) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (7) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (6) to obtain (see schematic diagram). Figure 2 ).

[0030] Example 8: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) FTO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 2,2-difluoroethyl trifluoromethanesulfonic acid powder in isopropanol solution to prepare a 1.0 mg / mL 2,2-difluoroethyl trifluoromethanesulfonic acid solution. Spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the lower interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Spread the 2,2-difluoroethyl trifluoromethanesulfonic acid solution from step (3) onto the perovskite light-absorbing layer obtained in step (4), spin-coat at 4000 rpm for 30 s, and then heat and anneal at 100°C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0031] Example 9: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) FTO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. XThin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 2,2-difluoroethyl trifluoromethanesulfonic acid powder in isopropanol solution to prepare a 1.0 mg / mL 2,2-difluoroethyl trifluoromethanesulfonic acid solution. Spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the lower interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve 2-fluoro-α-methyl-4-biphenylacetic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0032] Example 10: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) FTO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 2,2-difluoroethyl trifluoromethanesulfonic acid powder in isopropanol solution to prepare a 1.0 mg / mL 2,2-difluoroethyl trifluoromethanesulfonic acid solution. Spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the lower interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder in isopropanol solution to prepare a 0.4 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0033] Example 11: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder in isopropanol solution to prepare a 0.4 mg / mL solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the lower interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve 2,2-difluoroethyl trifluoromethanesulfonic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0034] Example 12: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. XThin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder in isopropanol solution to prepare a 0.4 mg / mL solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the lower interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve 2-fluoro-α-methyl-4-biphenylacetic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0035] Example 13: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 2-fluoro-α-methyl-4-biphenylacetic acid powder in isopropanol solution to prepare a 1.0 mg / mL 2-fluoro-α-methyl-4-biphenylacetic acid solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the lower interface modification layer; (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 400 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Spread the 2-fluoro-α-methyl-4-biphenylacetic acid solution obtained in step (3) onto the perovskite light-absorbing layer obtained in step (4), spin-coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0036] Example 14: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 2-fluoro-α-methyl-4-biphenylacetic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution of 2,2-difluoroethyl trifluoromethanesulfonic acid. Spread the solution evenly on the hole transport layer obtained in step (2), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain the lower interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 1000 μL DMF and 100 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve 2,2-difluoroethyl trifluoromethanesulfonic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0037] Example 15: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. XThin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 2-fluoro-α-methyl-4-biphenylacetic acid powder in isopropanol solution to prepare a 1.0 mg / mL solution of 2,2-difluoroethyl trifluoromethanesulfonic acid. Spread the solution evenly on the hole transport layer obtained in step (2), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain the lower interface modification layer. (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 500 μL DMF and 100 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder in isopropanol solution to prepare a 0.4 mg / mL solution, spread it on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 100 °C for 10 min to obtain the upper interface modification layer. (6) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the upper interface modification layer of step (5), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain an electron transport layer. (7) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (6) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0038] Example 16: An inverted perovskite solar cell with a fluorine-containing salt interface modification layer includes a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. Its fabrication method includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 1-fluoropyridine trifluoromethane sulfonate powder (PyFOTf) in isopropanol solution to prepare a 0.4 mg / mL PyFOTf solution, spread it on the hole transport layer obtained in step (2), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 70 °C for 5 min to obtain the lower interface modification layer; (4) Dissolve 0.5 mg CdCl2, 5.4 mg MACl, 12.7 mg MAI, 20.8 mg CsI, 22.3 mg PbCl2, 247.6 mg FAI and 737.6 mg PbI2 in a mixed solvent of 800 μL DMF and 200 μL DMSO to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the lower interface modification layer prepared in step (3), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (5) Spread the PyFOTf solution on the perovskite light-absorbing layer obtained in step (4), spin coat it at 4000 rpm for 30 s, and then heat and anneal it at 70°C for 5 min to obtain the upper interface modification layer. (6) Place C 60 The powder was deposited at 400°C on the upper interface modification layer obtained in step (5) at an evaporation rate of 0.1 Å / s for 20 nm to obtain an electron transport layer. (7) BCP powder was deposited at 150°C on the electron transport layer obtained in step (6) at an evaporation rate of 0.1 Å / s to form a buffer layer; (8) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (7) to obtain (see schematic diagram). Figure 3 ).

[0039] Comparative Example 1: This comparative example provides an inverted perovskite solar cell, which differs from Example 1 only in the absence of an upper interface modification layer; the other steps are the same as in Example 1. A schematic diagram of the structure is shown below. Figure 4 ; Comparative Example 2 This comparative example provides a bulk-modified inverse perovskite solar cell, which differs from Example 1 only in that the original interface modification material is added to the perovskite precursor solution. A schematic diagram of the structure is shown below. Figure 4 Its preparation method specifically includes the following steps: (1) ITO was placed in ultrapure water, acetone and alcohol in sequence, and sonicated for 15 min each. Then it was dried with nitrogen or dried in a drying oven, and then treated with ozone for 15 min to obtain a transparent conductive substrate. (2) Nickel oxide (NiO) X NiO powder was dissolved in ultrapure water to prepare a 10 mg / mL solution. X Solution, NiO X The solution was spread evenly on the transparent conductive substrate obtained in step (1), spin-coated at 4000 rpm for 30 s, and then annealed at 110 °C for 20 min to obtain NiO. X Thin film. Then, Me-PACz powder was dissolved in isopropanol solution to prepare a 0.5 mg / mL Me-PACz solution, which was then spread evenly on NiO. X On the thin film, spin-coating was performed at 4000 rpm for 30 seconds under nitrogen or argon atmosphere, followed by annealing at 100°C for 10 minutes to obtain a hole transport layer. (3) Dissolve 1 mg of 1-fluoropyridine trifluoromethane sulfonate, 0.5 mg of cadmium chloride (CdCl2), 5.4 mg of potassium chloride (MACl), 12.7 mg of potassium iodide (MAI), 20.8 mg of cesium iodide (CsI), 22.3 mg of lead chloride (PbCl2), 247.6 mg of methyl iodide (FAI) and 737.6 mg of lead iodide (PbI2) in a mixed solvent of 800 μL of N,N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO) to prepare a perovskite precursor solution. Spread the perovskite precursor solution on the hole transport layer prepared in step (2), rotate it at 1000 rpm for 10 s, and then rotate it at 5000 rpm for 40 s. After film formation, place it on a hot stage at 100℃ and heat for 30 min to obtain a perovskite light-absorbing layer. (4) Dissolve PCBM powder in chlorobenzene solution to prepare a 20 mg / mL PCBM solution. Spread the PCBM solution on the perovskite light-absorbing layer in step (3), spin coat at 4000 rpm for 30 s, and then heat and anneal at 100 °C for 10 min to obtain the electron transport layer. (5) Dissolve BCP powder in isopropanol solution to prepare 0.5 mg / mL BCP solution. Spread the BCP solution on the electron transport layer obtained in step (4) and spin coat at 4000 rpm for 25 s to obtain a buffer layer. (6) A silver electrode with a thickness of 100 nm is deposited on the buffer layer obtained in step (5) to obtain the desired electrode.

[0040] Experimental example: (1) The perovskite light-absorbing layer films of Examples 1-3 and Comparative Example 1 were characterized by SEM. Figure 5 It can be seen that after interface modification, the perovskite light-absorbing layers of Examples 1-3 show a significant increase in perovskite grain size, a reduction in grain boundary defects, and effective passivation of excess lead iodide. Figure 5 a-5d represent Comparative Example 1, Example 2, Example 1, and Example 3, respectively.

[0041] (2) The performance of the inverted perovskite solar cells prepared in Experimental Examples 1-16 and Comparative Examples 1-2 was tested. The test items included short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and conversion efficiency (PCE) of perovskite solar cells. The results are shown in Table 1.

[0042] Table 1. Photovoltaic conversion parameters of the inverted perovskite solar cells prepared in Experimental Examples 1-16 and Comparative Examples 1-2

[0043] From Table 1 and Figure 6It can be seen that, compared with Comparative Example 1 without an interface modification layer, the open-circuit voltage (Vo) of the inverted perovskite solar cells prepared in Examples 1-16 is significantly higher after the addition of 1-fluoropyridine trifluoromethane sulfonate. OC ), short-circuit current density (J SC The fill factor (FF) and power conversion efficiency (PCE) were all improved. Regarding the passivation interface, the passivation effect of the upper interface modification layer was better than that of the lower interface modification layer. Comparison of Example 3 with other examples revealed that the inverted perovskite solar cell using 1-fluoropyridine trifluoromethane sulfonate as both upper and lower interface modification showed the greatest performance improvement, resulting in the best cell performance. Compared to Comparative Examples 1-2, Examples 1-3, using 1-fluoropyridine trifluoromethane sulfonate as interface modification, significantly improved the performance of the inverted perovskite solar cell. Specifically, the short-circuit current density J of the inverted perovskite solar cell in Example 1 was [not specified]. SC Increased to 26.50 mA / cm 2 Open circuit voltage V OC The voltage was increased to 1.17V, the fill factor (FF) to 83.35%, and the power conversion efficiency (PCE) to 25.88%; the short-circuit current density (J) of the inverted perovskite solar cell in Example 2 was increased. SC Increased to 25.96 mA / cm 2 Open circuit voltage V OC Increased to 1.16V, fill factor J SC The photoelectric conversion efficiency (PCE) was increased to 24.83%, reaching 82.47%; the short-circuit current density J of the inverted perovskite solar cell in Example 3 was also increased. SC Increased to 26.51 mA / cm 2 Open circuit voltage V OC Increased to 1.17V, fill factor J SC The photoelectric conversion efficiency (PCE) has been increased to 26.12%, reaching 84.16%.

[0044] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A trans-perovskite solar cell with a fluorine-containing salt interface modification layer, characterized in that, The inverted perovskite solar cell includes a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer, and a metal electrode. The interface modification layer is formed by solution deposition and in-situ polymerization of an interface modification material; the interface modification layer may be located between the hole transport layer and the perovskite light-absorbing layer, or between the perovskite light-absorbing layer and the electron transport layer, or between the hole transport layer and the perovskite light-absorbing layer, or between the perovskite light-absorbing layer and the electron transport layer; the interface modification material is 1-fluoropyridine trifluoromethanesulfonate, 2-fluoro-α-methyl-4-biphenylacetic acid, or 2,2-difluoroethyl trifluoromethanesulfonate.

2. The inverted perovskite solar cell according to claim 1, characterized in that, The transparent conductive substrate is conductive glass; the hole transport layer is a nickel oxide / self-assembled molecule combination hole transport layer, wherein the self-assembled molecule is [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid; the perovskite light-absorbing layer is an all-inorganic perovskite or an organic-inorganic metal halide perovskite; the electron transport layer is PCBM and C 60 At least one of the following: the buffer layer is BCP; the metal electrode is a gold electrode, a silver electrode, or a copper electrode.

3. The inverted perovskite solar cell according to claim 2, characterized in that, The conductive glass is indium tin oxide or fluorine-doped tin dioxide.

4. The method for preparing the inverted perovskite solar cell according to any one of claims 1-3, characterized in that, The preparation method is any one of the following: (A1) The interface modification layer is located between the hole transport layer and the perovskite light-absorbing layer: from bottom to top, a transparent conductive substrate, a hole transport layer, an interface modification layer, a perovskite light-absorbing layer, an electron transport layer, a buffer layer and a metal electrode are stacked sequentially. (A2) The interface modification layer is located between the perovskite light-absorbing layer and the electron transport layer: from bottom to top, a transparent conductive substrate, a hole transport layer, a perovskite light-absorbing layer, an interface modification layer, an electron transport layer, a buffer layer, and a metal electrode are stacked sequentially. (A3) The interface modification layer is located between the hole transport layer and the perovskite light-absorbing layer, and between the perovskite light-absorbing layer and the electron transport layer: from bottom to top, a transparent conductive substrate, a hole transport layer, a lower interface modification layer, a perovskite light-absorbing layer, an upper interface modification layer, an electron transport layer, a buffer layer, and a metal electrode are stacked sequentially.

5. The preparation method according to claim 4, characterized in that, The specific steps of (A1) are as follows: A nickel oxide solution is spread evenly on a transparent conductive substrate, spin-coated for 20-40 seconds, and then annealed at 90-150°C for 5-20 minutes to obtain a nickel oxide film; then a self-assembled molecular layer solution is spread evenly on the nickel oxide film, spin-coated for 20-40 seconds in an inert gas environment, and then annealed at 80-130°C for 5-20 minutes to obtain a hole transport layer; an interface modification material is dissolved in isopropanol solution to prepare a solution, which is then spread evenly on the hole transport layer, spin-coated for 10-40 seconds, and then annealed at 50-120°C for 5-20 minutes to obtain an interface modification layer; then a perovskite precursor solution is spread evenly on the interface modification layer, first rotated at 500-2000 rpm for 5-20 seconds, and then rotated at 3000-7000 rpm for 20-60 seconds; After film formation, the perovskite film is annealed at 70-180℃ for 5-120 min to obtain the perovskite film. Spread the PCBM solution evenly on the perovskite film, spin-coat for 10-40 seconds, then heat-anneal at 50-120℃ for 5-20 minutes, or apply C... 60 An electron transport layer is prepared by evaporating BCP powder at a temperature of 400℃-600℃ and an evaporation rate of 0.1-1 Å / s for 10-40 nm. Then, a BCP solution is spread on the electron transport layer and spin-coated for 10-40 s, or a buffer layer is prepared by evaporating BCP powder at a temperature of 150℃-300℃ and an evaporation rate of 0.1-1 Å / s for 5-15 nm. Finally, a metal electrode is deposited on the buffer layer to obtain the final product.

6. The preparation method according to claim 4, characterized in that, The specific steps of (A2) are as follows: a nickel oxide solution is spread on a transparent conductive substrate, spin-coated for 20-40 seconds, and then heated and annealed at 90-150°C for 5-20 minutes to obtain a nickel oxide film; then a self-assembled molecular layer solution is spread on the nickel oxide film, spin-coated in an inert gas environment for 20-40 seconds, and then heated and annealed at 80-130°C for 5-20 minutes to obtain a hole transport layer; then a perovskite precursor solution is spread on the hole transport layer, first rotated at a speed of 500-2000 rpm for 5-20 seconds, and then rotated at a speed of 3000-7000 rpm for 20-60 seconds; After film formation, the perovskite film is annealed at 70-180℃ for 5-120 min to obtain a perovskite film. An interface modification material is dissolved in isopropanol to prepare an interface modification layer solution, which is then spread evenly on the perovskite film, coated for 10-40 s, and then annealed at 50-120℃ for 5-20 min to obtain an interface modification layer. A PCBM solution is spread evenly on the interface modification layer, spin-coated for 10-40 s, and then annealed at 50-120℃ for 5-20 min, or C... 60 An electron transport layer is prepared by evaporating BCP powder at a temperature of 400℃-600℃ and an evaporation rate of 0.1-1 Å / s for 10-40 nm. Then, a BCP solution is spread on the electron transport layer and spin-coated for 10-40 s, or a buffer layer is prepared by evaporating BCP powder at a temperature of 150℃-300℃ and an evaporation rate of 0.1-1 Å / s for 5-15 nm. Finally, a metal electrode is deposited on the buffer layer to obtain the final product.

7. The preparation method according to claim 4, characterized in that, The specific steps of (A3) are as follows: a nickel oxide solution is spread on a transparent conductive substrate, spin-coated for 20-40 seconds, and then heated and annealed at 90-150°C for 5-20 minutes to obtain a nickel oxide film; then a self-assembled molecular layer solution is spread on the nickel oxide film, spin-coated in an inert gas environment for 20-40 seconds, and then heated and annealed at 80-130°C for 5-20 minutes to obtain a hole transport layer; An interface modification material was dissolved in isopropanol solution to prepare an interface modification layer solution, which was then spread evenly on the hole transport layer for 10-40 seconds. The solution was then heated and annealed at 50-120℃ for 5-20 minutes to obtain the upper interface modification layer. The perovskite precursor solution was then spread evenly on the upper interface modification layer and rotated at 500-2000 rpm for 5-20 seconds, followed by rotation at 3000-7000 rpm for 20-60 seconds. After film formation, the perovskite film is annealed at 70-180℃ for 5-120 min to obtain a perovskite film. Then, an interface modification layer solution is spread evenly on the perovskite film, coated for 10-40 s, and then annealed at 50-120℃ for 5-20 min to obtain a lower interface modification layer. A PCBM solution is then spread evenly on the lower interface modification layer, spin-coated for 10-40 s, and then annealed at 50-120℃ for 5-20 min, or C... 60 An electron transport layer is prepared by evaporating BCP powder at a temperature of 400℃-600℃ and an evaporation rate of 0.1-1 Å / s for 10-40 nm. Then, a BCP solution is spread on the electron transport layer and spin-coated for 10-40 s, or a buffer layer is prepared by evaporating BCP powder at a temperature of 150℃-300℃ and an evaporation rate of 0.1-1 Å / s for 5-15 nm. Finally, a metal electrode is deposited on the buffer layer to obtain the final product.

8. The preparation method according to any one of claims 5-7, characterized in that, The transparent conductive substrate needs to be pretreated, specifically including the following steps: the transparent conductive substrate material is placed in ultrapure water, acetone and alcohol in sequence, ultrasonicated and then dried, and then treated with ozone.

9. The preparation method according to any one of claims 5-7, characterized in that, The perovskite precursor solution is prepared as follows: CdCl2, MACl, MAI, CsI, PbCl2, FAI, and PbI2 are dissolved in a mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide to obtain the solution.

10. The preparation method according to claim 9, characterized in that, The mass ratio of CdCl2, MACl, MAI, CsI, PbCl2, FAI, and PbI2 is 0.1-1:2-10:10-15:15-30:18-30:200-300:600-800; the volume ratio of N,N-dimethylformamide and dimethyl sulfoxide is 2-10:1.

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