Magnetoresistive effect element and magnetic memory

Abstract

This magnetoresistive effect element is provided with a substrate, a base layer provided on the substrate, and a laminated part provided on the base layer. The laminated part is provided with a magnetization-free layer, a reference layer, and a non-magnetic layer provided between the magnetization-free layer and the reference layer. The underlayer is provided with: two or more metal nitride layers; and a metal oxynitride layer provided between a first metal nitride layer and a second metal nitride layer among the two or more metal nitride layers.

Description

Technical Field

[0001] This invention relates to a magnetoresistive element and a magnetic memory. Background Technology

[0002] Magnetoresistive elements, such as giant magnetoresistive (GMR) elements and tunnel magnetoresistive (TMR) elements, which are formed by sequentially stacking a magnetized free layer made of ferromagnetic material, a non-magnetic spacer layer, and a reference layer (fixed layer) made of ferromagnetic material, are being continuously developed as components for devices such as magnetic field sensors, magnetic heads, and magnetoresistive random access memory (MRAM).

[0003] Existing technical documents Non-patent literature Non-patent literature 1: S. Yuasa et al. Nature Materials 3, 868-871, 2004 Non-patent literature 2: J. Slonczewski: J. Magn. Magn. Mater. 159 (1996) L1 Non-patent literature 3: S. Takahashi and S. Maekawa, Phys. Rev. Lett. 80, 1758 (1998) Summary of the Invention

[0004] (a) Technical problems to be solved For devices such as MRAM that utilize magnetoresistive effect elements as described above, from the perspective of reliability related to device lifespan, it is desirable to improve the flatness and crystallinity of the layers constituting the magnetoresistive effect elements.

[0005] The present invention was made in view of the above-mentioned technical problems, and aims to provide a magnetoresistive effect element with high flatness and crystallinity of the layer constituting the element, and a magnetic memory utilizing such a magnetoresistive effect element.

[0006] (II) Technical Solution To solve the above-mentioned technical problems, the magnetoresistive effect element of the present invention comprises: a substrate; a base layer disposed on the substrate; and a stacked portion disposed on the base layer, the stacked portion comprising a magnetized free layer, a reference layer and a non-magnetic layer disposed between the magnetized free layer and the reference layer, the base layer comprising: two or more metal nitride layers; and a metal oxynitride layer disposed between a first metal nitride layer and a second metal nitride layer among the two or more metal nitride layers.

[0007] In the magnetoresistive element of the present invention, since there are at least three layers in the substrate layer, there are at least two interfaces between the two layers composed of different materials. Therefore, when forming the substrate layer, the layers formed at these interfaces are more likely to crystallize, and thus the crystallinity and flatness of the uppermost layer among the two or more metal nitride layers of the substrate layer are increased compared to the case where the entire substrate layer 1 is formed only by the material constituting the uppermost layer. Therefore, it is possible to improve the crystallinity and flatness of the layers constituting the laminate formed on such a substrate layer.

[0008] Furthermore, in the magnetoresistive effect element of the present invention, the metal constituting the first metal nitride layer can be different from the metal constituting the second metal nitride layer. In this case, since the at least two interfaces are formed by a combination of different layers, the effect of improving the crystallinity and flatness of the layers constituting the stacked portion due to the presence of at least two interfaces can be more effectively utilized.

[0009] Furthermore, the magnetoresistive effect element of the present invention can further include a metal layer disposed between the substrate layer and the stacked portion. In this case, the crystallinity and flatness of the layers constituting the stacked portion formed on the metal layer can be further improved by the metal layer.

[0010] Furthermore, in the magnetoresistive effect element of the present invention, the reference layer may include: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic insertion layer disposed between the first ferromagnetic layer and the second ferromagnetic layer in a manner that allows the first ferromagnetic layer and the second ferromagnetic layer to be exchange-coupled. In this case, the magnetization direction of the reference layer can be further stabilized.

[0011] Furthermore, in the magnetoresistive effect element of the present invention, the first metal nitride layer can be disposed on the substrate side of the metal oxynitride layer, and the second metal nitride layer can be disposed on the stacked portion side of the metal oxynitride layer, wherein the first metal nitride layer is the thickest in the substrate layer. In this case, at least one of the at least two interfaces of the substrate layer is located close to the stacked portion. Therefore, the effect of improving the crystallinity and flatness of the layers constituting the stacked portion due to the presence of at least two interfaces can be more effectively utilized.

[0012] Furthermore, in the magnetoresistive effect element of the present invention, the substrate layer can be further provided with a third metal nitride layer as two or more metal nitride layers, and among the first metal nitride layer, the second metal nitride layer and the third metal nitride layer, the metal nitride layer located in the middle of the thickness direction of the substrate layer is the thickest.

[0013] Furthermore, in the magnetoresistive effect element of the present invention, the thickness of the metal nitride layer closest to the substrate among the two or more metal nitride layers can be greater than the thickness of the metal oxynitride layer. In this case, the positions of the at least two interfaces of the substrate layer are close to the stacked portion. Therefore, the effect of improving the crystallinity and flatness of the layers constituting the stacked portion due to the presence of at least two interfaces can be more effectively utilized.

[0014] Furthermore, in the magnetoresistive effect element of the present invention, the metal of the metal nitride layer closest to the stacked portion among the two or more metal nitride layers can be the same as the metal of the metal nitride layer closest to the substrate among the two or more metal nitride layers.

[0015] Furthermore, in the magnetoresistive effect element of the present invention, the thickness of the substrate layer can be 50 nm or more.

[0016] Furthermore, the magnetic storage device of the present invention comprises a plurality of magnetoresistive effect elements of any one of the above-mentioned types.

[0017] (III) Beneficial Effects According to the present invention, a magnetoresistive element with high flatness and crystallinity of the layer constituting the element and a magnetic memory utilizing such a magnetoresistive element can be provided. Attached Figure Description

[0018] Figure 1 A diagram illustrating the longitudinal cross-sectional structure of the magnetoresistive element involved in the implementation scheme.

[0019] Figure 2 A diagram showing the detailed longitudinal cross-sectional structure of the base layer and the metal layer.

[0020] Figure 3 A diagram illustrating a detailed longitudinal cross-sectional structure of the substrate and metal layer of a TMR element involved in a variation of the implementation scheme.

[0021] Figure 4 This is a longitudinal cross-sectional view of the TMR element 30.

[0022] Figure 5 This is a diagram showing the circuit diagram of the magnetic storage 100. Detailed Implementation

[0023] Hereinafter, the embodiments for carrying out the present invention will be described in detail with reference to the accompanying drawings. Furthermore, in the various figures, the same reference numerals are used for the same elements whenever possible. Additionally, for ease of viewing the drawings, the dimensional ratios within and between the constituent elements are arbitrary values.

[0024] Figure 1This diagram illustrates the longitudinal cross-sectional structure of the magnetoresistive element involved in this embodiment. The magnetoresistive element in this embodiment is a tunnel magnetoresistive (TMR) element 30. Figure 1 As shown, the TMR element 30 includes: a substrate E1 that functions as an electrode, a base layer 1 disposed on the substrate E1, a metal layer 1M disposed on the base layer 1, a stacked portion MS disposed on the metal layer 1M, and electrode layers 12 and 13 disposed on the stacked portion MS. Figure 1 The diagram shows a rectangular coordinate system, with the Z-axis set along the stacking direction of each layer of the TMR element 30, and the X-axis and Y-axis set along the in-plane direction of each layer of the TMR element 30. Figure 2 Subsequent diagrams will also be corresponding to the requirements. Figure 1 The rectangular coordinate system is shown in this way.

[0025] The substrate E1, which functions as an electrode, is made of a non-magnetic metal such as Al, Cu, or Ta. The metal layer 1M is made of a metallic material such as Mg or Fe, and is provided for purposes such as improving the crystallinity of the upper layers. The TMR element 30 may also be without the metal layer 1M.

[0026] The stacked portion MS comprises: a first buffer layer 2 made of metals such as Fe or Cr, a second buffer layer 3 made of alloys such as NiCr, a reference layer R, a tunnel barrier layer 7 serving as a non-magnetic layer, a magnetized free layer 8, a first capping layer 9, an intermediate layer 10, and a second capping layer 11.

[0027] The reference layer R comprises a first ferromagnetic layer 4, a non-magnetic insertion layer 5, and a second ferromagnetic layer 6. The first ferromagnetic layer 4 is made of a ferromagnetic material such as CoNi. The non-magnetic insertion layer 5 is made of a non-magnetic material such as Ir or Mo. The second ferromagnetic layer 6 is made of a ferromagnetic material such as CoFeB. The non-magnetic insertion layer 5 is disposed between the first ferromagnetic layer 4 and the second ferromagnetic layer 6 in a manner that allows for exchange coupling between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. Thus, to enable… Figure 1 The magnetization direction of the first ferromagnetic layer 4, as indicated by the arrow, is coupled in a manner parallel to the magnetization direction of the second ferromagnetic layer 6.

[0028] A tunnel barrier layer 7 is disposed between the reference layer R and the magnetized free layer 8. The tunnel barrier layer 7 allows electrons to pass through using the tunneling effect. The tunnel barrier layer 7 is, for example, composed of at least one material selected from the group consisting of MgO, Al₂O₃, ZnO, GaOX, and MgAl₂O₄. The magnetized free layer 8 is, for example, composed of a ferromagnetic material containing Co or a ferromagnetic material containing at least two elements selected from the group consisting of Co, Ni, Fe, and B, such as CoFeB. This allows for easy... Figure 1The arrows indicate the variation in magnetization direction of the free magnetization layer 8. When the reference layer R is parallel to the magnetization direction of the free magnetization layer 8, the magnetic reluctance is low. Conversely, when the reference layer R is antiparallel to the magnetization direction of the free magnetization layer 8, the magnetic reluctance is high.

[0029] When the tunnel barrier layer 7 is composed of materials such as MgO, it is possible to impart perpendicular magnetic anisotropy to the ferromagnetic materials of the reference layer R and the first ferromagnetic layer 4. In this case, such as Figure 1 As shown, the magnetization directions of the first ferromagnetic layer 4 and the second ferromagnetic layer 6 of the reference layer R are fixed along the Z-axis, while the easy magnetization axis of the magnetization-free layer 8 is along the Z-axis.

[0030] The first capping layer 9 is disposed on the magnetized free layer 8 and is composed of a non-magnetic material such as MgO oxide. The thickness of the first capping layer 9 is less than the thickness of the tunnel barrier layer 7. The intermediate layer 10 is a layer containing ferromagnetic elements such as Co and Fe, for example, composed of an alloy such as CoFe, and is disposed between the first capping layer 9 and the second capping layer 11. The second capping layer 11 is disposed on the intermediate layer 10 and contains at least one element selected from the group consisting of Ru, Mo, and W.

[0031] Electrode layer 12 is made of a conductive material, such as a Ru / Mo / Ru laminate. Electrode layer 13 is made of a conductive material, such as a metal like W or Mo.

[0032] Figure 2 A diagram showing a detailed longitudinal cross-sectional structure of the substrate layer and the metal layers is provided. The substrate layer 1 has a configuration consisting of multiple layers stacked in the Z-axis direction; in this embodiment, it has three metal nitride layers and one metal oxynitride layer. Specifically, as... Figure 2 As shown, the substrate 1 has: a first metal nitride layer 1B, a second metal nitride layer 1D, a metal oxynitride layer 1C disposed between the first metal nitride layer 1B and the second metal nitride layer 1D in the Z-axis direction, and a third metal nitride layer 1A disposed between the first metal nitride layer 1B and the substrate E1.

[0033] A first metal nitride layer 1B is disposed on the substrate E1 side of the metal oxy nitride layer 1C, and a second metal nitride layer 1D is disposed on the stacked portion MS of the metal oxy nitride layer 1C (see reference). Figure 1 The second metal nitride layer 1D is the metal nitride layer of the substrate layer 1 disposed closest to the stacked portion MS (refer to...). Figure 1 The third metal nitride layer 1A is the layer disposed on the side closest to the substrate E1 among the metal nitride layers of the substrate 1.

[0034] In the substrate layer 1, an interface X1 is formed between the first metal nitride layer 1B and the metal oxynitride layer 1C, an interface X2 is formed between the metal oxynitride layer 1C and the second metal nitride layer 1D, and an interface X3 is formed between the third metal nitride layer 1A and the first metal nitride layer 1B.

[0035] The substrate layer 1 is formed, for example, by sequentially stacking a third metal nitride layer 1A, a first metal nitride layer 1B, a metal oxynitride layer 1C, and a second metal nitride layer 1D on a substrate E1.

[0036] The first metal nitride layer 1B, the second metal nitride layer 1D, and the third metal nitride layer 1A are, for example, composed of metal nitrides such as tantalum nitride (TaN) and titanium nitride (TiN). The first metal nitride layer 1B and the third metal nitride layer 1A are composed of different metal nitrides. The metal oxynitride layer 1C is composed of metal oxynitrides such as titanium oxynitride (TiON) and tantalum oxynitride (TaON).

[0037] In this embodiment, the metal constituting the first metal nitride layer 1B is different from the metal constituting the second metal nitride layer 1D. Furthermore, in this embodiment, the metal constituting the second metal nitride layer 1D is the same as the metal constituting the third metal nitride layer 1A. Such conditions can be achieved, for example, by making the first metal nitride layer 1B composed of titanium nitride (TiN), the second metal nitride layer 1D composed of tantalum nitride (TaN), and the third metal nitride layer 1A composed of tantalum nitride (TaN).

[0038] The thickness of the first metal nitride layer 1B in the Z-axis direction can be set to, for example, 5 nm or more and 100 nm or less; the thickness of the second metal nitride layer 1D in the Z-axis direction can be set to, for example, 2 nm or more and 50 nm or less; the thickness of the metal oxynitride layer 1C in the Z-axis direction can be set to, for example, 2 nm or more and 50 nm or less; and the thickness of the third metal nitride layer 1A in the Z-axis direction can be set to, for example, 5 nm or more and 50 nm or less.

[0039] Figure 3 This diagram illustrates a detailed longitudinal cross-sectional structure of the substrate layer and metal layer of the TMR element according to a variation of this embodiment. The composition of the substrate layer differs between the TMR element 30 of the basic embodiment described above. Specifically, the substrate layer 1x of this variation has a structure derived from the substrate layer 1 of the basic embodiment described above (refer to...). Figure 2 The substrate 1x is formed by removing the first metal nitride layer 1B from the substrate. Therefore, in this modified example, the substrate 1x has two metal nitride layers (a second metal nitride layer 1D and a third metal nitride layer 1A) and one metal oxynitride layer (metal oxynitride layer 1C).

[0040] In the substrate 1x, an interface X4 is formed between the third metal nitride layer 1A and the metal oxynitride layer 1C, and an interface X2 is formed between the metal oxynitride layer 1C and the second metal nitride layer 1D.

[0041] Figure 4 This is a longitudinal cross-sectional view of the TMR element 30. (See attached image.) Figure 4 As shown, the TMR device 30 includes: a substrate E1, electrode layers 12 and 13, and a base layer 1. Figure 1 The diagram shows the stacked portion MS and the sidewalls 10W disposed outside the stacked portion MS between the substrate layer 1 and the electrode layers 12 and 13. The sidewalls 10W are made of insulating materials such as SiO2 (silicon dioxide), SiNX (silicon nitride), Al2O3 (aluminum oxide), TiO (titanium oxide), TaOX (tantalum oxide), and AlSiO (aluminum silicate). Other layers of the sidewalls 10W of the TMR element can be formed by sputtering. Alternatively, the oxide and / or nitride and / or oxynitride layers of the TMR element can be formed using chemical vapor deposition (CVD).

[0042] According to the TMR element 30 of this embodiment as described above, since there are at least three layers in the substrate 1 and 1x ( Figure 2 The basic implementation plan consists of four layers. Figure 3 In the modified example, there are 3 layers), therefore there are at least 2 interfaces between the two layers made of different materials. Figure 2 The basic implementation scheme consists of three interfaces: X1, X2, and X3. Figure 3 In the modified example, there are two interfaces, X2 and X4. Therefore, when forming the substrate layer 1, the layers formed on these interfaces are prone to crystallization. Consequently, the crystallinity and flatness of the uppermost second metal nitride layer 1D in the metal nitride layer of the substrate layer 1 are improved compared to the case where only the material constituting the second metal nitride layer 1D is used to form the entire substrate layer 1. Therefore, it is possible to improve the structural layer stack MS formed on such a substrate layer 1 (refer to...). Figure 1 The crystallinity and flatness of the layer.

[0043] Furthermore, in the above-described embodiments, among the plurality of layers constituting the substrate layers 1 and 1x, the metal nitride layer preferably disposed on the substrate E1 side of the metal oxynitride layer 1C ( Figure 2 First metal nitride layer 1B Figure 3 The third metal nitride layer 1A is the thickest. In this case, a portion of the interface between the substrate layers 1 and 1x ( Figure 2 Interface X2, X3, Figure 3 The positions of the interfaces X2 and X4 are close to the stack-up MS (refer to the interface X2 and X4). Figure 1Therefore, the effects of improving the crystallinity and flatness of the layers constituting the stacked portion MS can be more effectively achieved due to the presence of interfaces X2, X3, and X4.

[0044] Furthermore, in the above-described embodiments, among the first metal nitride layer 1B, the second metal nitride layer 1D, and the third metal nitride layer 1A, the first metal nitride layer 1B, which is located in the middle of the thickness direction of the substrate layer 1, is preferably the thickest (see reference). Figure 2 In this case, a portion of the interfaces X2 and X3 of the substrate 1 are located close to the stacked portion MS (see reference). Figure 1 Therefore, the effects of improving the crystallinity and flatness of the layers constituting the stacked portion MS can be more effectively achieved due to the presence of interfaces X2 and X3.

[0045] Furthermore, in the above-described embodiment, it is preferable that the third metal nitride layer 1A, which is the metal nitride layer closest to the substrate E1 among the plurality of metal nitride layers of the substrate layers 1 and 1x, is thicker than the metal oxynitride layer 1C (refer to...). Figure 2 and Figure 3 In this case, the interfaces X1, X2, X3, and X4 of the base layers 1 and 1x are located close to the stacked portion MS (see reference). Figure 1 Therefore, the effects of improving the crystallinity and flatness of the layers constituting the MS layer stack can be more effectively achieved due to the presence of these interfaces.

[0046] Furthermore, in the above-described embodiments, the thickness of the substrate layers 1 and 1x is preferably 50 nm or more (refer to...). Figure 2 and Figure 3 Therefore, the effects of improving the crystallinity and flatness of the layers constituting the MS stack can be particularly effective. Furthermore, the thickness of the substrate layers 1 and 1x can be set to 100 nm or less.

[0047] Figure 5 This is a diagram illustrating the circuit of the magnetic storage device 100. (See diagram below.) Figure 5 As shown, the magnetic storage 100 includes a plurality of TMR elements 30. The TMR elements 30 have the aforementioned... Figures 1-3 The elements shown are as follows. The magnetic memory 100 is a spin-injected magnetized inverse type MRAM (STT-MRAM).

[0048] The magnetic memory 100 has a lower portion L, a middle portion M, and an upper portion U. The lower portion L has a semiconductor substrate with multiple transistors Q1 (switches). The drains of the transistors Q1 are connected to the substrate E1 of the TMR element 30 via via electrodes VE. The sources of the transistors Q1 are connected to source lines SL. The source lines SL can be formed on the lower portion L or on the middle portion M. The gates of the transistors Q1 are connected to word lines WL.

[0049] The through-hole electrode VE and the word line WL are formed on the middle part M, which is made of an insulating layer. The insulating layer is made of materials such as SiO2, SiNX, or Al2O3. The upper part U is the portion located above the through-hole electrode VE.

[0050] The electrode layers 12 and 13 of the TMR element 30 are connected to the bit line BL.

[0051] Transistor Q1 is turned on via the potential of word line WL, selecting TMR element 30. Bit line BL or source line SL supplies current to the selected TMR element 30. STT-MRAM responds to the supplied current and memorizes the magnetization direction of the magnetized free layer. Because the magnetic memory 100 has, as described above, TMR element 30 with flatness of the layers constituting the element and high crystallinity, its reliability related to lifespan is increased.

[0052] When writing data to a memory cell of the magnetic memory 100, a selection voltage is applied to the word line WL of the TMR element 30 corresponding to the data being written. Furthermore, with the TMR element 30 in the ON state, a voltage is applied between the bit line BL and the source line SL to allow a polarity current corresponding to the written data ("1" or "0"). The magnitude of the applied voltage is set to be such that it can induce a spin-injection magnetization reversal in the magnetized free layer 8 of the TMR element 30. Therefore, the magnetization direction of the magnetized free layer 8 is set to correspond to the direction of the written data.

[0053] When data is read from a storage cell of the magnetic memory 100, a selection voltage is applied to the word line WL of the TMR element 30 corresponding to the data being read. Furthermore, with the TMR element 30 in the ON state, a voltage lower than the write voltage is applied between the bit line BL and the source line SL. As a result, a current corresponding to the amount of data being stored flows through the TMR element 30 between the bit line BL and the source line SL, thus enabling the detection of the current value and the reading of the data.

[0054] The present invention is not limited to the above-described embodiments and can be in various modified forms.

[0055] For example, although in the above-described embodiments, the metal constituting the second metal nitride layer 1D is the same as the metal constituting the third metal nitride layer 1A (see reference). Figure 2 and Figure 3 However, the two metals can also be different from each other.

[0056] Furthermore, although the magnetoresistive effect element in the above-described embodiment is a TMR element 30 (refer to...) Figure 1 However, the magnetoresistive effect element of the present invention can also be a giant magnetoresistive (GMR) element. In this case, in the stacked portion MS, a layer made of a non-magnetic conductive material such as Ag or Cu can be used instead of the tunnel barrier layer 7.

[0057] The magnetoresistive effect element and magnetic memory of the present invention have the following configuration.

[0058] [1] A magnetoresistive element comprising: substrate; A base layer disposed on the substrate; and The laminated portion disposed on the substrate layer includes: a magnetized free layer, a reference layer, and a non-magnetic layer disposed between the magnetized free layer and the reference layer. The substrate layer comprises: two or more metal nitride layers; and a metal oxynitride layer disposed between a first metal nitride layer and a second metal nitride layer in the two or more metal nitride layers.

[0059] [2] According to the magnetoresistive effect element described in [1], the metal constituting the first metal nitride layer is different from the metal constituting the second metal nitride layer.

[0060] [3] The magnetoresistive effect element according to [1] or [2], wherein the magnetoresistive effect element further comprises a metal layer disposed between the substrate layer and the stacked portion.

[0061] [4] The magnetoresistive effect element according to any one of [1] to [3], wherein the reference layer comprises: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic insertion layer disposed between the first ferromagnetic layer and the second ferromagnetic layer in such a way as to exchange coupling the first ferromagnetic layer and the second ferromagnetic layer.

[0062] [5] The magnetoresistive effect element according to any one of [1] to [4], wherein the first metal nitride layer is disposed on the substrate side of the metal oxynitride layer, the second metal nitride layer is disposed on the stacked portion side of the metal oxynitride layer, and the first metal nitride layer is the thickest in the substrate layer.

[0063] [6] The magnetoresistive effect element according to any one of [1] to [5], wherein the substrate layer further comprises a third metal nitride layer as one of the two or more metal nitride layers, and the metal nitride layer located in the middle of the thickness direction of the substrate layer among the first metal nitride layer, the second metal nitride layer and the third metal nitride layer is the thickest.

[0064] [7] The magnetoresistive effect element according to any one of [1] to [6], wherein the thickness of the metal nitride layer disposed closest to the substrate among the two or more metal nitride layers is greater than the thickness of the metal oxynitride layer.

[0065] [8] The magnetoresistive effect element according to any one of [1] to [7], wherein the metal of the metal nitride layer closest to the stacked portion of the two or more metal nitride layers is the same as the metal of the metal nitride layer closest to the substrate of the two or more metal nitride layers.

[0066] [9] The magnetoresistive effect element according to any one of [1] to [8], wherein the thickness of the substrate layer is 50 nm or more.

[0067]

[10] A magnetic storage device having a plurality of magnetoresistive elements as described in any one of [1] to [9].

[0068] Explanation of reference numerals in the attached figures 1: Substrate layer; 1A: Third metal nitride layer; 1B: First metal nitride layer; 1C: Metal oxynitride layer; 1D: Second metal nitride layer; 1M: Metal layer.

Claims

1. A magnetoresistive effect element, comprising: substrate; A base layer disposed on the substrate; and The laminated portion disposed on the substrate layer includes: a magnetized free layer, a reference layer, and a non-magnetic layer disposed between the magnetized free layer and the reference layer. The substrate layer comprises: two or more metal nitride layers; and a metal oxynitride layer disposed between a first metal nitride layer and a second metal nitride layer in the two or more metal nitride layers.

2. The magnetoresistive effect element according to claim 1, wherein, The metal constituting the first metal nitride layer is different from the metal constituting the second metal nitride layer.

3. The magnetoresistive effect element according to claim 2, wherein, The magnetoresistive element further comprises a metal layer disposed between the substrate layer and the laminate.

4. The magnetoresistive effect element according to claim 3, wherein, The reference layer includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic insertion layer disposed between the first ferromagnetic layer and the second ferromagnetic layer in a manner that allows the first ferromagnetic layer and the second ferromagnetic layer to be exchange-coupled.

5. The magnetoresistive effect element according to claim 4, wherein, The first metal nitride layer is disposed on the substrate side of the metal oxynitride layer, and the second metal nitride layer is disposed on the stacked portion side of the metal oxynitride layer. In the substrate layer, the first metal nitride layer is the thickest.

6. The magnetoresistive effect element according to claim 4, wherein, The substrate layer further comprises a third metal nitride layer as one of the two or more metal nitride layers. Among the first metal nitride layer, the second metal nitride layer, and the third metal nitride layer, the metal nitride layer located in the middle of the thickness direction of the substrate layer is the thickest.

7. The magnetoresistive effect element according to claim 5, wherein, The thickness of the metal nitride layer closest to the substrate among the two or more metal nitride layers is greater than the thickness of the metal oxynitride layer.

8. The magnetoresistive effect element according to claim 5, wherein, The metal of the metal nitride layer closest to the stacked portion among the two or more metal nitride layers is the same as the metal of the metal nitride layer closest to the substrate among the two or more metal nitride layers.

9. The magnetoresistive effect element according to claim 6, wherein, The thickness of the substrate layer is 50 nm or more.

10. A magnetic storage device comprising a plurality of magnetoresistive elements as described in any one of claims 1 to 9.

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