Package, semiconductor device and method of forming same

Abstract

In one embodiment, a device includes a photonic layer including a waveguide and a grating coupler wherein the waveguide is optically coupled to the grating coupler; an interconnect structure over the photonic layer; an electron die bonded to the interconnect structure; and a support over the electron die, where the support includes a super lens, where the super lens is optically coupled to the grating coupler. The embodiment of the invention also relates to a package, a semiconductor device and a forming method thereof.

Description

Technical Field

[0001] Embodiments of this application relate to packages, semiconductor devices, and methods of forming the same. Background Technology

[0002] Optical signal transmission and processing are often combined with electrical signal transmission and processing to provide a comprehensive range of applications. For example, optical fibers can be used for long-distance signal transmission, while electrical signals can be used for short-distance signal transmission, processing, and manipulation. Accordingly, devices integrating long-distance optical components and short-distance electronic components are formed for the conversion between optical and electrical signals, as well as the processing of both. Therefore, packages can include both optical (photonic) components and electronic devices. Summary of the Invention

[0003] Some embodiments of this application provide a semiconductor device including: a photonic layer including a waveguide and a grating coupler, the waveguide being optically coupled to the grating coupler; an interconnect structure located above the photonic layer; an electron die bonded to the interconnect structure; and a support located above the electron die, wherein the support includes a superlens optically coupled to the grating coupler.

[0004] Other embodiments of this application provide a package comprising: a photonic interconnect structure including a plurality of waveguides, a first grating coupler and a second grating coupler, wherein the first grating coupler is configured for a first wavelength and the second grating coupler is configured for a second wavelength; an electron die attached to the photonic interconnect structure; and a support member located above the electron die, wherein the support member includes a first superlens and a second superlens, the first superlens being optically coupled to the first grating coupler and configured for the first wavelength, and the second superlens being optically coupled to the second grating coupler and configured for the second wavelength.

[0005] Further embodiments of this application provide a method for forming a semiconductor device, comprising: patterning a photonic material to form a plurality of photonic components, the photonic components including a waveguide and a grating coupler; forming a first interconnect structure located above a first side of the plurality of photonic components, wherein the first interconnect structure is electrically coupled to at least one of the plurality of photonic components; bonding an electron die to the first interconnect structure; attaching a support structure to the electron die; and patterning the top surface of the support structure to form a superlens, wherein the superlens is optically coupled to the grating coupler through the support structure. Attached Figure Description

[0006] The following detailed description, taken in conjunction with the accompanying drawings, will best provide a comprehensive understanding of all aspects of this disclosure. It should be noted that, in accordance with industry standard practice, the components are not drawn to scale. In fact, the dimensions of the components may be arbitrarily increased or decreased for clarity of discussion.

[0007] Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 Intermediate steps in the formation of an optical engine according to some embodiments are shown.

[0008] Figure 6 and Figure 7 Intermediate steps in the formation of a superlens for an optical engine according to some embodiments are shown.

[0009] Figure 8A and Figure 8B A perspective view of a superlens according to some embodiments is shown.

[0010] Figure 9 and Figure 10 Intermediate steps in the formation of an optical engine according to some embodiments are shown.

[0011] Figure 11 A cross-sectional view of an optical engine according to some embodiments is shown.

[0012] Figure 12 A schematic diagram of a superlens according to some embodiments is shown, the superlens being configured to transmit a focused signal into an optical fiber.

[0013] Figure 13 A three-dimensional schematic diagram of a superlens according to some embodiments is shown, the superlens being configured to transmit a focusing signal into an optical fiber array.

[0014] Figure 14 A three-dimensional schematic diagram of a superlens according to some embodiments is shown, the superlens being configured to transmit a focused signal into a single optical fiber.

[0015] Figure 15 A cross-sectional view of an optical engine according to some embodiments is shown. Detailed Implementation

[0016] The following disclosure provides numerous different embodiments or examples for implementing various components of the invention. To simplify this disclosure, specific examples of components and arrangements are described below. These are, of course, merely examples and not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include embodiments where the first and second components are in direct contact, or embodiments where additional components may be formed between the first and second components such that the first and second components are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various examples. This repetition is for the purpose of brevity and clarity and does not in itself define a relationship between the various embodiments and / or configurations discussed.

[0017] Furthermore, spatial relative terms (such as "below," "under," "lower," "above," "upper," etc.) are used herein to simplify descriptions of the relationship between one element or component and another, as illustrated in the figures. Spatial relative terms are intended to encompass different orientations of a device in use or operation, including orientations other than those depicted in the figures. The device may be oriented differently (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted accordingly.

[0018] This document describes various structures (e.g., packages including photonic structures) and methods of their formation. According to some embodiments, the optical engine includes one or more superlenses that allow manipulation of a light beam. For example, the superlens can be configured to receive optical signals from a grating coupler and focus the optical signals into one or more optical fibers. The superatoms of the superlens can be flexibly configured to provide desired control over the light beam, thereby allowing for greater freedom in device design. In this way, the superlenses described herein can facilitate efficient optical communication through photonic semiconductor packages, etc.

[0019] The embodiments discussed herein are intended to provide examples of how the subject matter of this disclosure can be made or used, and modifications that can be made while maintaining the intended scope of the different embodiments will be readily understood by those skilled in the art. In the various views and exemplary embodiments, the same reference numerals are used to designate the same elements. Although method embodiments may be discussed as being performed in a particular order, other method embodiments may be performed in any logical order.

[0020] Figures 1 to 10 An optical engine 100 according to some embodiments is shown (see [link]). Figure 10This is an intermediate step in the formation of an optical engine 100. The optical engine 100 includes a waveguide, photonic components, and an integrated circuit, which can be configured to receive, generate, modify, transmit, and / or process optical signals. According to some embodiments, the optical engine 100 provides an input / output (I / O) interface between optical and electrical signals within a package or package assembly. According to some embodiments, the optical engine 100 provides an optical network for signal communication between various components (e.g., photonic devices, integrated circuits, coupling to external optical fibers, etc.). In this way, the optical engine 100 can achieve photoelectric (OE) conversion for package-level optical communication (e.g., within the package) and / or optical communication with external components (e.g., via optical fibers). In some cases, the optical engine 100 can be considered as a photonic package assembly, an optical package module, a silicon photonic chip, a photonic die, a photonic semiconductor package, etc.

[0021] According to some embodiments, go to Figure 1 At this stage, the optical engine 100 includes a substrate 10, a dielectric layer 12, and a photonic material 14. According to embodiments, at the start of the manufacturing process of the optical engine 100, the substrate 10, dielectric layer 12, and photonic material 14 may collectively form part of a silicon-on-insulator (SOI) substrate, which may be doped (e.g., with p-type or n-type dopants) or undoped. According to some embodiments, the substrate 10 may be a wafer, such as a silicon wafer. Other substrates may also be used, such as silicon-on-insulator (SOI) substrates, multilayer substrates, or gradient substrates. According to some embodiments, the semiconductor material of the substrate 10 may include silicon; germanium; compound semiconductors including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors including silicon germanium, gallium arsenide phosphide, aluminum indium arsenide, aluminum gallium arsenide, gallium indium arsenide, gallium phosphide indium, and / or gallium arsenide phosphide indium; or combinations thereof. In other embodiments, the substrate 10 may be a dielectric material, such as silicon oxide, glass, ceramic, plastic, or any other suitable material that allows for structural support for the devices thereon. Other substrates, such as multilayer substrates or gradient substrates, may also be used. In some cases, the substrate 10 may have no passive or active devices. According to some embodiments, a plurality of optical engines 100 are formed on a single substrate 10 and subsequently cut into individual optical engines 100.

[0022] The dielectric layer 12 may be a dielectric layer separating the substrate 10 from the photonic material 14 thereon. According to some embodiments, the dielectric layer may also serve as a partial cladding material surrounding a subsequently fabricated photonic component (described below). According to embodiments, the dielectric layer 12 may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, etc., or combinations thereof. The dielectric layer 12 may be formed using techniques such as implantation (e.g., to form a buried oxide (BOX) layer) or using suitable deposition techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), combinations thereof, etc. However, any suitable materials and fabrication methods may be used.

[0023] Photonic material 14 is formed above dielectric layer 12. According to some embodiments, photonic material 14 may be a semiconductor material, such as silicon, germanium, silicon-germanium, group III-V semiconductor materials, compound semiconductor materials, the like, or combinations thereof. In other embodiments, photonic material 14 may include a dielectric material (e.g., silicon nitride), lithium niobate, polymers, the like, or combinations thereof. Photonic material 14 may be formed using suitable techniques, such as epitaxial growth, chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), the like, or combinations thereof. Other materials or techniques are possible. In some cases, photonic material 14 may be considered as an "active layer," etc.

[0024] Figure 2 A photonic component 18 formed of photonic material 14 is shown according to some embodiments. According to some embodiments, the photonic component 18 may include devices or components such as optical waveguides 20 (e.g., ridge waveguides, rib waveguides, buried trench waveguides, diffused waveguides, etc.), grating couplers 22, other couplers (e.g., edge couplers, evanescent wave couplers, etc.), directional couplers, optical modulators (e.g., germanium modulators, Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, opto-to-electric converters (e.g., photodetectors, PN junctions, etc.), electro-to-optic converters, lasers (e.g., laser diodes), phase shifters, combinations thereof, etc. However, the photonic component 18 may include other devices, structures, or components besides those examples. Figure 2 The individual photonic components 18, including the individually labeled waveguide 20 and grating coupler 22, are shown. Other numbers, arrangements, configurations, or types of photonic components 18 are possible.

[0025] Figure 2The photonic component 18 includes one or more waveguides 20 and one or more grating couplers 22. According to some embodiments, the waveguide 20 is a silicon waveguide, but other waveguides are possible. The waveguide 20 may be optically coupled to other waveguides 20, grating couplers 22, or the photonic component 18. For example, the waveguide 20 may be optically coupled to an adjacent grating coupler 22, allowing optical signals to be transmitted between the waveguide 20 and the grating coupler 22. In some cases, the waveguide 20 and the grating coupler 22 may be portions of a continuous structure formed of photonic material 14.

[0026] According to some embodiments, the photonic component 18 can be formed by patterning the photonic material 14 into a suitable shape for the photonic component 18. For example, the photonic material 14 can be patterned using one or more photolithographic masks and etching processes, but any suitable method for patterning the photonic material 14 can be used. Patterning may expose portions of the dielectric layer 12. In some cases, additional processing steps may be performed to form certain types of photonic components 18, such as additional implantation processes, deposition processes, epitaxial growth processes, and / or patterning processes. According to some embodiments, one or more photonic components 18 can be formed by patterning the photonic material 14 and then depositing another material on portions of the patterned photonic material 14. For example, forming the photonic component 18 may include patterning the silicon-containing photonic material 14 and then epitaxially growing germanium regions on the patterned photonic material 14. Other materials, techniques, or process steps are possible.

[0027] According to some embodiments, still referencing Figure 2 A dielectric layer 16 may be formed over the dielectric layer 12 and / or the photonic component 18. The dielectric layer 16 may be, for example, a dielectric material that separates the individual photonic components 18 from each other and from the overlying structure. Furthermore, in some cases, the dielectric layer 16 may serve as a cladding material that at least partially surrounds and / or covers one or more photonic components 18. According to some embodiments, the dielectric layer 16 may include silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations thereof, etc., and the dielectric layer 16 may be formed using suitable deposition techniques (e.g., chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), etc.). Other materials or deposition techniques are possible. According to some embodiments, after depositing the dielectric layer 16, a planarization process (e.g., chemical mechanical polishing (CMP), grinding, etc.) may be performed to planarize the top surface of the dielectric layer 16. According to some embodiments, the planarization process may expose the top surface of one or more photonic components 18. In such embodiments, the top surface of some photonic components 18 may be flush with or coplanar with the top surface of the dielectric layer 16 (within the range of process variations). According to some embodiments, after performing a planarization process, one or more photonic components 18 are still covered by the dielectric layer 16. In some cases, the photonic components 18 and the dielectric layer 16 may be collectively regarded as a "photonic layer," an "optical layer," etc.

[0028] Figure 3 An interconnect structure 30 formed above a dielectric layer 16 is shown according to some embodiments. According to some embodiments, the interconnect structure 30 includes a dielectric layer 32 (not shown separately) and conductive components 34 formed in the dielectric layer 32. The conductive components 34 allow electrical communication within the optical engine 100. The conductive components 34 may include conductive lines, conductive vias, conductive pads, metallization patterns, redistribution layers, etc., providing electrical interconnections and paths within the optical engine 100. In some cases, some conductive components 34 may be electrically connected to one or more photonic components. According to some embodiments, the interconnect structure 30 may also include conductive pads 38 on the top surface of the interconnect structure 30. The conductive pads 38 may be metal pads, bonding pads, etc.

[0029] According to some embodiments, the interconnect structure 30 is formed of alternating layers of dielectric material (e.g., dielectric layer 32) and conductive material (e.g., conductive component 34). The conductive component 34 can be formed using any suitable process, such as deposition, damascene, dual damascene, etc. In certain embodiments, the interconnect structure 30 may have multiple layers of conductive component 34, but the exact number of layers of conductive component 34 may depend on the design of the optical engine 100. The dielectric layer 32 may be, for example, an insulating layer and / or a passivation layer, and may include silicon oxide, silicon nitride, polymers, molding compounds, the like, or combinations thereof. The conductive component 34 may include, for example, metals or metal alloys, such as copper, silver, gold, tungsten, cobalt, ruthenium, aluminum, alloys thereof, combinations thereof, etc. Other materials or forming techniques are possible.

[0030] According to some embodiments, conductive pads 38 are formed in the topmost dielectric layer 32 (not shown separately) of dielectric layer 32. According to some embodiments, conductive pads 38 may include via portions (not shown separately) that physically and electrically contact the underlying conductive component 34. According to some embodiments, the topmost dielectric layer 32 of the interconnect structure 30 may be a material suitable for dielectric-dielectric bonding, such as silicon oxide, silicon nitride, silicon oxynitride, etc. Other materials are possible. According to some embodiments, conductive pads 38 can be formed by first forming openings (not shown separately) in the topmost dielectric layer 32 to expose conductive portions of the underlying conductive component 34, depositing optional pads in the openings, and then depositing conductive material in the openings. The conductive material may be similar to those described for the conductive component 34. For example, according to some embodiments, the conductive material may be copper or a copper alloy. A planarization process (e.g., chemical mechanical polishing (CMP) or grinding process) may be performed to remove excess conductive material, such that the top surface of the conductive pads 38 is substantially flush with the top surface of the topmost dielectric layer 32. This is an example, and the conductive pad 38 can be formed using other materials, techniques, or process steps.

[0031] Furthermore, according to some embodiments, during the fabrication of the interconnect structure 30, one or more photonic components 36 may be formed within the dielectric layer 32. The photonic component 36 may be similar to the previously described photonic component 18. For example, according to some embodiments, the photonic component 36 may include a waveguide (e.g., a silicon nitride waveguide), a coupler, etc. In some cases, one or more photonic components 36 may be optically coupled to each other and / or optically coupled to one or more photonic components 18 or waveguide 20. In this way, photonic components 18, waveguide 20, and photonic components 36 can provide optical communication and optical interconnection within the optical engine 100.

[0032] According to some embodiments, during the fabrication of interconnect structure 30, photonic component 36 can be formed by depositing material for photonic component 36 on dielectric layer 32. The material for photonic component 36 can be a dielectric material (e.g., silicon nitride, silicon oxide, silicon oxynitride, polymers, combinations thereof, etc.) or a semiconductor material (e.g., silicon, germanium, etc.). The material can then be patterned into a suitable shape for photonic component 36 using appropriate photolithography and etching techniques. Another dielectric layer 32 can then be deposited on photonic component 36. In certain embodiments, interconnect structure 30 may have multiple layers of photonic component 36, but the exact number of layers of photonic component 36 may depend on the design of optical engine 100. In some cases, interconnect structure 30, dielectric layer 16, and photonic component 18 (including waveguide 20 and grating coupler 22) can be collectively considered as a photonic die, photonic integrated circuit (PIC), photonic interconnect structure, etc.

[0033] exist Figure 4 In some embodiments, the electron die 40 is bonded to the interconnect structure 30. The electron die 40 may be, for example, a semiconductor device, die, or chip, which may include an integrated circuit and can interact with the photonic component 18 using electrical signals. For example, the electron die 40 may include a controller, driver, transimpedance amplifier, transistor, other active device, resistor, capacitor, other passive device, the like, or combinations thereof. Accordingly, the electron die 40 may be considered an electronic integrated circuit (EIC) structure, etc. As a representative example, Figure 4Transistor 41 is shown, which may be formed on the surface of a substrate (not shown separately) of electron tube die 40, such as the active surface of a semiconductor substrate. Transistor 41 may include, for example, a gate structure (e.g., a gate stack) located above one or more channel regions. In some cases, the channel regions may include nanostructures, nanosheets, etc. Source / drain regions may be formed adjacent to the channel regions. The source / drain regions may refer to either the source or the drain, individually or collectively depending on the context. Contact plugs may be formed that couple the gate structure and / or the source / drain regions, and conductive components may be formed to connect to the contact plugs of transistor 41 as part of an integrated circuit, etc. Transistor 41 may be, for example, a metal-oxide-semiconductor field-effect transistor (MOSFET), a planar transistor, a fin field-effect transistor (FinFET), a nanostructure field-effect transistor (e.g., a nanostructure FET, a nanoFET, a gate-all-around (GAA) transistor, etc.), a complementary field-effect transistor (CFET), or other types of transistors. Other transistors, devices, or integrated circuits, or combinations thereof, may be present within electron tube die 40. According to some embodiments, the integrated circuit may be configured to interface with the photonic component 18. For example, the electron die 40 may process electrical signals received from the photonic component 18, control the operation of the photonic component 18, and / or generate electrical signals that the photonic component 18 converts into optical signals. Figure 4 One electron tube 40 is shown, but in other embodiments, the optical engine 100 may include two or more electron tubes 40.

[0034] According to some embodiments, die 40 may provide a serializer / deserializer (SerDes) function. In this way, die 40 may be used as part of an input / output (I / O) interface between optical and electrical signals within or within a package / assembly containing optical engine 100. According to some embodiments, die 40 may include one or more processing devices, such as a central processing unit (CPU or "xPU"), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), a high-performance computing (HPC) die, a logic die, the like, or combinations thereof. Die 40 may include one or more memory devices, which may be volatile memory, such as dynamic random access memory (DRAM), static random access memory (SRAM), high-bandwidth memory (HBM), other types of memory, etc. Other dies 40 or their configurations are possible.

[0035] According to some embodiments, the die 40 may include bonding pads 42 formed in a bonding layer (not shown separately), and the die 40 is bonded to the interconnect structure 30 via dielectric-dielectric bonding and / or metal-metal bonding (e.g., direct bonding, fusion bonding, oxide-oxide bonding, hybrid bonding, etc.). The bonding pads 42 may be formed of materials similar to those used for the conductive pads 38, such as copper, copper alloys, etc., but other materials are also possible. According to some embodiments, the bonding layer of the die 40 (e.g., an exposed dielectric layer) is bonded to the bonding layer of the interconnect structure 30 (e.g., an exposed dielectric layer, such as the topmost dielectric layer 32) using a dielectric-dielectric bonding process, and the conductive pads of the die 40 are bonded to the corresponding conductive pads 38 of the interconnect structure 30 using a metal-metal bonding process. According to some embodiments, the bonding process can be initiated by activating the bonding surfaces of the die 40 and the interconnect structure 30, and activation can promote bonding of the bonding surfaces. Activating the bonding surface may include, for example, dry processing, wet processing, plasma processing, exposure to inert gas plasma, exposure to H2, exposure to N2, exposure to O2, or combinations thereof. For embodiments using wet processing, an RCA cleaning process may be used, for example. In other embodiments, the activation process may include other types of processing. After the activation process, the die 40 is aligned with and positioned to physically contact the interconnect structure 30. The die 40 and the interconnect structure 30 are then subjected to heat treatment and contact pressure to bond the respective bonding layers together via dielectric-dielectric bonding and to bond the conductive pads of the die 40 to the conductive pads 38 of the interconnect structure 30 via metal-metal bonding. According to some embodiments, the resulting bonded structure is subsequently baked, annealed, pressed, or otherwise treated to strengthen or finalize the bonding. This is just an example; other bonding processes are possible. In other embodiments, the electron die 40 may include conductive connectors (e.g., solder bumps, copper bumps, copper pillars, conductive bumps comprising at least a copper layer and a solder layer, etc.) and may be used to bond to the interconnect structure 30.

[0036] According to some embodiments, further in Figure 4In this process, a dielectric material 44 is formed over the electron die 40 and the interconnect structure 30. The dielectric material 44 may be formed from silicon oxide, silicon nitride, polymers, the like, or combinations thereof. The dielectric material 44 may be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), spin coating, the like, or combinations thereof. According to some embodiments, the dielectric material 44 may be formed by high-density plasma chemical vapor deposition (HDP-CVD), flow-through chemical vapor deposition (FCVD), plasma-enhanced chemical vapor deposition (PECVD), the like, or combinations thereof. According to some embodiments, the dielectric material 44 may be a gap-filling material, which may include one or more of the materials described above. According to some embodiments, the dielectric material 44 may be a material that is substantially transparent to light of a wavelength suitable for transmitting optical signals or optical power (e.g., silicon oxide). For example, the dielectric material 44 may allow optical signals or optical power to be transmitted between the photonic component 18 (e.g., grating coupler 22, etc.) and the aforementioned optical fiber, etc. According to some embodiments, the dielectric material 44 may be a material similar to those of dielectric layer 32 and / or dielectric layer 16. Other dielectric materials formed by any acceptable process may be used. The dielectric material 44 may be planarized using a planarization process (e.g., chemical mechanical polishing (CMP), grinding, etc.). According to some embodiments, the planarization process may expose the die 40 such that the surface of the die 40 is coplanar with the surface of the dielectric material 44. In other embodiments, the die 40 is covered by the dielectric material 44.

[0037] exist Figure 5In some embodiments, a support member 50 is attached to a structure. The support member 50 is a rigid structure or substrate attached to the structure to provide structural or mechanical stability. Using the support member 50 reduces warpage or bending, which can improve the performance of the photonic component 18 within the optical engine 100. In some embodiments, the support member 50 can be attached to the structure (e.g., to the dielectric material 44 and / or the electron die 40) using a bonding layer 46 formed over the dielectric material 44 and the electron die 40. In some embodiments, the bonding layer 46 can be an adhesive layer. In other embodiments, the bonding layer 46 can be a dielectric layer suitable for dielectric-dielectric bonding of the support member 50, such as a silicon oxide layer. For example, the bonding layer 46 can be deposited on the dielectric material 44 and the electron die 40, and then the support member 50 can be bonded to the bonding layer 46 using a suitable dielectric-dielectric bonding technique. According to some embodiments, the support 50 and the bonding layer 46 (if present) are formed of a material transparent to light of the relevant wavelength, allowing optical signals to be transmitted through the support 50 and the bonding layer 46. For example, according to some embodiments, the support 50 is formed of silicon, but other materials are possible. According to some embodiments, the support 50 may include a carrier or wafer, such as a silicon wafer, when attached. Other types or materials of support 50 are possible. Subsequently, the support 50 may be sawn or cut into individual regions (e.g., individual substrates) as part of a dicing process that cuts multiple optical engines 100 formed on the same substrate 10 into individual optical engines 100.

[0038] exist Figure 6 and Figure 7 In some embodiments, a superlens 52 is formed in the support 50. The superlens 52 is optically coupled to the grating coupler 22 to facilitate external optical communication, which will be described in more detail below. Figures 6-7 A single superlens 52 is shown formed in the support 50, but in other embodiments, multiple superlenses 52 may be formed. Although Figures 1-10 The embodiment shows that the superlens 52 is formed immediately after the attachment support 50, but in other embodiments, the superlens 52 may be formed at any suitable process stage after the attachment support 50. In other embodiments, the superlens 52 is formed in the support 50 before the attachment support 50.

[0039] exist Figure 6In some embodiments, a patterned mask 51 is formed over the support 50. Forming the patterned mask 51 includes, for example, depositing a mask layer and then patterning the mask layer. The mask layer may be, for example, a photoresist layer, a photoresist structure, a multilayer photoresist, a hard mask layer, etc. For example, according to some embodiments, the mask layer is a photoresist layer formed using a spin coating technique, but other mask layers or deposition techniques are possible. The mask layer may be patterned using suitable photolithography and / or etching techniques to form the patterned mask 51. The pattern of the patterned mask 51 corresponds to the subsequently formed superlens 52. The mask layer may then be developed using suitable photolithography and / or etching techniques to form the patterned mask 51. The pattern of the patterned mask may include openings or grooves and may expose portions of the support 50.

[0040] exist Figure 7 In some embodiments, a patterned mask 51 is used to etch a support 50 to form a superlens 52. Suitable wet etching and / or dry etching processes can be used to etch the support 50, some of which may be anisotropic. Etching forms grooves in the top surface of the support 50, wherein the pattern of the grooves corresponds to the pattern of the patterned mask 51. The grooves define a plurality of "superatoms 53", which are regions or parts protruding from the surface of the support 50. In other words, the support 50 is patterned using photolithography and etching steps to form the superlens 52 formed by the arrangement of superatoms 53. The superlens 52 may be recessed from the top surface of the support 50 such that the top surfaces of the superatoms 53 are located at or below the top surface of the support 50, such as... Figure 7 As shown. In other embodiments, the surrounding top surface of the support 50 may be etched so that the superatom 53 protrudes above the top surface of the support 50. According to some embodiments, a refractive index matching material or the like (not shown) is deposited over the superlens 52. After the superlens 52 is formed, the patterned mask 51 can be removed using suitable techniques (e.g., using etching or ashing processes).

[0041] The superatoms 53 of the superlens 52 may have different sizes, shapes, spacings, or heights. In some cases, the superatoms 53 may be considered as nanostructures, pillars, protrusions, etc., and the superlens 52 may be considered as a metamaterial (e.g., a photonic metamaterial). A specific configuration of the superatoms 53 of the superlens 52 manipulates an electromagnetic field (e.g., the electromagnetic field of an optical signal) to provide desired optical effects, such as focusing, beam steering, wavefront shaping, control of light intensity distribution, or other effects. For example, the superatoms 53 of the superlens 52 may be configured to provide lens-like focusing behavior for an incident light signal. In other embodiments, the superlens 52 may have other effects or properties. In some cases, the superlens 52 may be configured for light of a specific wavelength or wavelength range, a specific incident (e.g., input) light wavefront or direction, a specific output light wavefront or direction, a specific input or output focal length, or various other suitable optical characteristics.

[0042] Figure 8A and Figure 8B A perspective view of a superlens 52 according to some embodiments is shown. Figures 8A-8B The superlens 52 shown is intended as a non-limiting example for illustrative purposes, and superlens 52 with other configurations, arrangements, numbers, or superatoms 53 characteristics are possible. Figure 8A An example superlens 52 is shown, comprising a set of circular (e.g., cylindrical) superatoms 53 arranged in an approximately hexagonal array pattern. Figure 8A As shown, the superlens 52 may include superatoms 53 of different sizes, widths, or diameters. In some cases, the superatoms 53 near the interior (e.g., the center) of the superlens 52 may have a larger size than the superatoms 53 near the exterior (e.g., the edge) of the superlens 52. Figure 8B An example superlens 52 is shown, comprising a set of rectangular (e.g., rectangular prisms) superatoms 53 arranged in an approximately rectangular grid pattern. Figure 8B As shown, the superlens 52 may include superatoms 53 of different sizes, widths, or lengths. In some cases, the superlens 52 may have superatoms 53 of different shapes, such as a combination of circular superatoms 53 and rectangular superatoms 53, but other shape combinations are possible.

[0043] The superatoms 53 of the superlens 52 may be arranged symmetrically or asymmetrically. The superatoms 53 may have any suitable cross-sectional shape, such as circular, elliptical, square, rectangular, hexagonal, triangular, curved, irregular, or any other shape suitable for the desired characteristics of the superlens 52. The superatoms 53 may have a substantially constant cross-section and substantially vertical sidewalls, or may have curved or inclined sidewalls. In some cases, the superatoms 53 may be conical. The superatoms 53 may be arranged in any suitable configuration. For example, the superatoms 53 may have a regular (e.g., periodic) arrangement, such as an array or grid, which may be hexagonal, rectangular, triangular, or any other suitable type. In some cases, the superatoms 53 may be arranged irregularly or aperiodically, or in a combination of different configurations. The superatoms 53 may have any suitable spacing (e.g., grooves or gaps) between adjacent superatoms 53. The superlens 52 may have a different number of superatoms 53 than the number shown. According to some embodiments, the superatoms 53 of the superlens 52 have substantially the same height, which may be substantially equal to the depth of the grooves patterned into the support 50. In some cases, the top surface of the superatoms 53 may be substantially flush with or coplanar with the top surface of the support 50. In other embodiments, different superatoms 53 may have different heights or may have top surfaces at different levels. The arrangement or shape of the superatoms 53 may be determined based on the desired characteristics of the respective superlens 52, and any suitable configuration of the superatoms 53 may be used for the superlens 52.

[0044] exist Figure 9 In some embodiments, substrate 10 is removed to form interconnect structure 60. Interconnect structure 60 may include photonic components (e.g., waveguide 64, reflector 68, etc.) and / or conductive components (e.g., conductive lines 63, conductive vias 66, etc.). Substrate 10 may be removed using planarization processes (e.g., chemical mechanical polishing (CMP), grinding processes, etc.) and / or etching processes. In some embodiments, removing substrate 10 exposes dielectric layer 12. Removing substrate 10 may include thinning dielectric layer 12. In some embodiments, dielectric layer 12 serves as a stop layer during substrate 10 removal. In other embodiments, dielectric layer 12 is also removed.

[0045] According to some embodiments, waveguides 64 are formed over dielectric layer 12 after substrate 10 is removed. Waveguides 64 allow optical communication within optical engine 100, and some waveguides 64 can be optically coupled to photonic components 18, such as evanescent wave coupling to one or more waveguides 20. In this way, one or more waveguides 64 can receive optical signals from and / or transmit optical signals to photonic components 18. According to some embodiments, interconnect structure 60 includes one or more waveguides 64 formed within dielectric layer 62 (not shown separately). Figure 9 Two waveguides 64 are shown, but there may be more or fewer waveguides 64 or waveguide 64 layers. According to some embodiments, waveguides 64 may be optically coupled to adjacent waveguides 64, waveguides 64 of another layer above, and / or waveguides 64 of another layer below. Suitable techniques can be used to optically couple waveguides 64, such as evanescent wave coupling, grating couplers, or other optical coupling techniques.

[0046] According to some embodiments, a waveguide 64 layer can be formed by depositing a waveguide material on a dielectric layer 62 and then patterning the waveguide material. According to some embodiments, the waveguide material can be deposited on a dielectric layer 12, and thus the resulting waveguide 64 is formed on the dielectric layer 12. In other cases, the waveguide material is deposited on an existing dielectric layer 62. The waveguide material can be a dielectric material, such as silicon nitride, silicon oxide, silicon oxynitride, polymers, combinations thereof, etc. In other embodiments, the waveguide material can be a semiconductor material, such as silicon, germanium, etc. The waveguide material can be deposited using suitable techniques (e.g., atomic layer deposition (ALD), physical vapor deposition (PVD), etc.). The waveguide material can then be patterned using suitable photolithography and etching techniques to form the waveguide 64 layer. A dielectric layer 62 can then be deposited over the waveguide 64 layer. The dielectric layer 62 can be a material similar to dielectric layer 16 or dielectric layer 32, such as silicon oxide, etc. The process involves repeatedly depositing waveguide material, patterning the waveguide material to form waveguide 64 layers, and then depositing a dielectric layer 62 on top of waveguide 64 layers to form a multilayer waveguide 64. The precise number or arrangement of waveguide 64 layers may depend on the design of the optical engine 100.

[0047] The conductive components 63 of the interconnect structure 60 may include conductive lines, conductive vias, conductive pads, metallization patterns, redistribution layers, etc., providing electrical interconnections and paths within the optical engine 100. In some cases, some conductive components 63 may be electrically connected to one or more photonic components. According to some embodiments, the interconnect structure 60 includes one or more layers of conductive components 63 formed in one or more dielectric layers 62. In this way, the interconnect structure 60 may include both waveguides 64 and conductive components 63 formed in the dielectric layers 62. According to some embodiments, the conductive components 63 may be similar to the conductive components 34 of the interconnect structure 30 and may be formed using similar materials and / or techniques. For example, the conductive components 63 may be formed using any suitable process, such as deposition, damascene, dual damascene, etc. The exact number or arrangement of the conductive component layers 63 may depend on the design of the optical engine 100.

[0048] According to some embodiments, the interconnect structure 60 includes one or more reflectors 68, which may be formed below a corresponding grating coupler 22. The reflector 68 may be a metallic structure that facilitates the transmission of optical signals to or from the grating coupler 22. According to some embodiments, the reflector 68 may be formed together with conductive components 63, and formed using the same materials and process steps as the conductive components 63. In other embodiments, the reflector 68 is formed using different materials or process steps than the conductive components 63.

[0049] According to some embodiments, interconnect structure 60 includes via 66. Via 66 may extend through one or more dielectric layers 62 and may extend through other layers to form an electrical connection within optical engine 100. For example, via 66 may extend from conductive portion 63 of interconnect structure 60 to conductive portion 34 of interconnect structure 30. In this way, in some cases, via 66 may extend through dielectric layer 62, dielectric layer 12, dielectric layer 16, and / or dielectric layer 32. In some cases, via 66 may be electrically connected to a photonic component. For example, via 66 may be formed by forming an opening extending through a suitable dielectric layer using acceptable photolithography and etching techniques. Conductive material may then be deposited in the opening to form via 66. Via 66 may extend completely through interconnect structure 60 or may extend partially through interconnect structure 60. Via 66 may be formed during the formation of interconnect structure 60 or may be formed after interconnect structure 60 is formed. Other materials or techniques are possible.

[0050] exist Figure 10In some embodiments, conductive connectors 74 are formed on interconnect structure 60 to form optical engine 100. Conductive connectors 74 can be used to electrically connect optical engine 100 to external structures, such as encapsulation substrates, organic core substrates, interposers, etc. In some embodiments, an optional passivation layer 70 is formed over interconnect structure 70. Passivation layer 70 may include, for example, polymers (e.g., polybenzoxazole (PBO), polyimide, benzocyclobutene (BCB)-based polymers, etc.); nitrides (e.g., silicon nitride); oxides (e.g., silicon oxide, PSG, BSG, BPSG, etc.); sealants, molding compounds, etc.; the like or combinations thereof. Passivation layer 70 may be formed, for example, by spin coating, lamination, chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc. In some cases, passivation layer 70 may be dielectric layer 62 or may be considered part of interconnect structure 60.

[0051] A bump under-metallization (UBM) 72 can then be formed within the passivation layer 70 to create physical and electrical contact to the via 66 and / or the conductive component 63. In other embodiments, the bump under-metallization (UBM) 72 is formed prior to the formation of the passivation layer 70. According to some embodiments, the bump under-metallization (UBM) 72 has bump portions located on and extending along the main surface of the passivation layer 70. The bump under-metallization (UBM) 72 can be formed from one or more conductive materials using a suitable process (e.g., plating). According to some embodiments, the bump under-metallization (UBM) 72 is not formed.

[0052] According to some embodiments, conductive connectors 74 are then formed on the under-bump metallization (UBM) layer 72. The conductive connectors 74 may be, for example, ball grid array (BGA) connectors, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, microbumps, bumps formed by electroless nickel-palladium immersion gold (ENEPIG) technology, etc. The conductive connectors 74 may include conductive materials such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, the like, or combinations thereof. According to some embodiments, the conductive connectors 74 are initially formed by forming a solder layer through evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the solder layer is structurally formed, reflow can be performed to shape the material into the desired bump shape. In another embodiment, the conductive connectors 74 include metal pillars (e.g., copper pillars) formed by sputtering, printing, electroplating, electroless plating, CVD, etc. The metal pillars may be solderless and have substantially vertical sidewalls. According to some embodiments, a metal cap layer is formed on top of the metal pillars. The metal cap layer may include nickel, tin, tin-lead, gold, silver, palladium, indium, nickel-palladium-gold, nickel-gold, the like, or combinations thereof, and may be formed by a plating process. In other embodiments, the conductive connector 74 is omitted, and the under-bump metallization layer (UBM) 72 is a bonding pad for metal-to-metal bonding with external components. In this way, the optical engine 100 can be formed. Figure 10 The optical engine 100 shown is an example; other process steps, materials, configurations, or arrangements are possible.

[0053] According to some embodiments, the superlens 52 of the optical engine 100 described herein facilitates the transmission of an optical signal 110 (shown as an arrow in the figure) to an external component (e.g., an optical fiber 150, etc.). The optical fiber 150 may be a single fiber or part of a fiber bundle, fiber array unit (FAU), etc. In some cases, the optical fiber 150 may be attached to the support 50 by means of optical adhesive, etc. (not shown). For example, the optical engine 100 may generate or otherwise transmit the optical signal 110 in a waveguide 20 optically coupled to a grating coupler 22. The optical signal 110 may be coupled to the grating coupler 22, which guides the optical signal 110 through the support 50 to the superlens 52. According to some embodiments, a reflector 68 facilitates the redirection of the optical signal 110 to the superlens 52. The superlens 52 may partially or completely overlap with the grating coupler 22 corresponding to the superlens 52, or may not overlap with the grating coupler 22 corresponding to the superlens 52. The superlens 52 can be aligned with or laterally offset from the grating coupler 22. In other words, the optical signal 110 can be transmitted from the grating coupler 22 vertically or obliquely (e.g., deviating from the vertical direction at a non-zero angle) to the superlens 52 corresponding to the grating coupler 22. The superlens 52 receives the optical signal 110 from the grating coupler 22 and focuses the optical signal 110. Figure 10The focus signal 110' is represented by the superlens 52. The superlens 52 guides the focus signal 110' into the optical fiber 150, thus coupling the focus signal 110' into the optical fiber 150. For example, in some cases, the focus of the focus signal 110' may be at or near the end of the optical fiber 150. The focus signal 110' can be transmitted from the superlens 52 vertically or obliquely (e.g., deviating from the vertical direction at a non-zero angle) to the optical fiber 150. In this way, the superlens 52 couples the optical signal 110 from the optical engine 100 into the optical fiber 150, thereby allowing external optical communication.

[0054] Figure 11 An optical engine 101 comprising a plurality of superlenses 52A-52D is shown according to some embodiments. The optical engine 101 is similar to... Figure 10 The optical engine 100 differs in that it includes multiple superlenses 52A-52D and multiple grating couplers 22A-22D. Each superlens 52A-52D is optically coupled to a corresponding grating coupler 22A-22D. For example, superlenses 52A, 52B, 52C, and 52D are configured to receive optical signals from their respective grating couplers 22A, 22B, 22C, and 22D. Figure 11 Four superlenses 52A-52D and four corresponding grating couplers 22A-22D are shown, but the optical engine 101 may have any suitable number of superlenses 52 and grating couplers 22. The superlenses 52A-52D can be formed using techniques similar to those described for the superlenses 52 of the optical engine 100, such as photolithography and etching techniques. The superlenses 52A-52D can be separated by a protrusion of the support 50, such as... Figure 11 As shown, they can be separated by the recessed portion of the support member 50. In other words, the surface of the support member 50 between adjacent superlenses 52 can be flush with or lower than the top surface of the superatom 53 of the superlenses 52.

[0055] According to some embodiments, each grating coupler 22A-22D can receive a corresponding optical signal 110A-110D from a corresponding waveguide 20A-20D and guide the optical signal 110A-110D to its respective associated superlens 52A-52D. Each superlens 52A-52D focuses the received optical signal 110A-110D, which is displayed as a focused signal 110'A-110'D. In this way, multiple superlenses 52 can be used to transmit multiple optical signals 110 outside the optical engine 101. The multiple superlenses 52A-52D can focus their corresponding focused signals 110'A-110'D at the same location (e.g., into the same optical fiber 150) or at different locations (e.g., into different optical fibers 150).

[0056] According to some embodiments, optical signals can be transmitted using light of different wavelengths, for example, enabling a single waveguide or optical fiber to simultaneously carry multiple optical signals of different wavelengths. The superlens 52 described herein facilitates the transmission of multiple optical signals of multiple wavelengths (e.g., wavelength division multiplexing). Those skilled in the art will understand that while an optical signal may be described as having associated wavelengths, it can include a wavelength range around a center wavelength, a carrier wavelength, etc. According to some embodiments, each optical signal 110A-110D can be transmitted using light of different wavelengths (e.g., or wavelength ranges), wherein associated grating couplers 22A-22D and superlenses 52A-52D are configured to transmit and focus light of a specific wavelength (e.g., or wavelength range). Accordingly, each optical signal 110A-110D can be transmitted along different paths. As an example of "coarse wavelength division multiplexing," the wavelengths of optical signals 110A-110D can be spaced approximately 10 nm to approximately 25 nm. For example, the wavelength of optical signal 110A is approximately 1310 nm, optical signal 110B is approximately 1330 nm, optical signal 110C is approximately 1350 nm, and optical signal 110D is approximately 1370 nm. Other wavelength differences are possible; for example, for "long wavelength division multiplexing," the wavelengths of optical signals 110A-110D can be spaced approximately 1 nm to approximately 10 nm, or for "dense wavelength division multiplexing," the wavelengths of optical signals 110A-110D can be spaced approximately 0.5 nm to approximately 1 nm. These examples are intended to illustrate the use of any suitable different wavelengths or wavelength differences. More or fewer wavelengths and corresponding optical signal paths can be used in the optical engine 101, and the number of wavelengths and / or optical signal paths can depend on the desired data transmission volume. In this way, each superlens 52A-52D can be configured to focus light of a different wavelength. In other embodiments, two or more optical signals 110A-110D may be transmitted using light of the same wavelength.

[0057] Figure 12 A schematic diagram of superlenses 52A-52D according to some embodiments is shown. Superlenses 52A-52D are configured to transmit focusing signals 110'A-110'D to optical fiber 150. Superlenses 52A-52D may be formed in a support 50, which may be similar to... Figure 11 It is part of the optical engine 101. In some cases, each focusing signal 110'A-110'D can use light of a different wavelength. For example... Figure 12As shown, each superlens 52A-52D directs its focusing signal 110'A-110'D to the same optical fiber 150, and therefore each superlens 52A-52D has approximately the same focal point (e.g., superlenses 52A-52D are confocal). The distance between each superlens 52A-52D and the optical fiber 150 can be different, and therefore, the focal length of each superlens 52A-52D can be different. Furthermore, each superlens 52A-52D can direct its focusing signal 110'A-110'D to the optical fiber 150 at different angles. For example, Figure 12 The focusing signals 110'A-110'D shown are directed to the horizontal plane at angles A1-A4, respectively. The angles of the focusing signals 110'A-110'D can be between approximately 0° and approximately 90°. In this way, multiple superlenses 52 can couple multiple optical signals of different wavelengths into the same optical fiber 150.

[0058] Figure 13 A perspective view of a superlens 52 according to some embodiments is shown. The superlens 52 is configured to transmit a focus signal 110' to an optical fiber array 160. Some example focus signals 110' are shown. The superlens 52 may be formed in a support 50, which may be similar to... Figure 11 The optical engine 101 is part of the optical engine. The fiber array 160 may be, for example, a fiber array unit (FAU) comprising multiple fibers 150. In some cases, the fiber array 160 is attached to the optical engine 101, and optical adhesive or refractive index matching compound (not shown) may be used to facilitate attachment and / or facilitate optical signal transmission between the optical engine 101 and the fiber array 160. The fiber array 160 is shown as having five fibers 150-1, 150-2, 150-3, 150-4, and 150-5, but other numbers or arrangements of fibers are possible. The superlens 52 is shown as being formed in a grid-like arrangement, but other numbers or arrangements of superlenses 52 are possible.

[0059] exist Figure 13 In the illustrated embodiment, the superlenses 52 in each row 56 are configured to transmit optical signals of similar wavelengths. For example, superlenses 52A-1, 52A-2, 52A-3, 52A-4, and 52A-5 in row 56A are configured to transmit optical signals of a first wavelength, while superlenses 52D-1, 52D-2, 52D-3, 52D-4, and 52D-5 in row 56D are configured to transmit optical signals of a second wavelength. Figure 13In this embodiment, each column of superlenses 52 is configured to transmit optical signals of different wavelengths. For example, superlenses 52A-1, 52B-1, 52C-1, and 52D-1 can each transmit optical signals of different wavelengths. Furthermore, each column of superlenses 52 is associated with a specific optical fiber 150 and guides a focusing signal 110' to that fiber 150. For example, superlenses 52A-1, 52B-1, 52C-1, and 52D-1 guide corresponding focusing signals 110'A, 110'B, 110'C, and 110'D to optical fiber 150-1, each focusing signal 110'A-110'D having a different wavelength. Each optical fiber 150 may be located at a similar position relative to the superlenses 52 in the corresponding column. Each superlens 52 in each row 56 may be configured to have the same wavelength, angle, and focal length to couple the focusing signal 110' of the superlens 52 into the corresponding optical fiber 150 of the superlens 52. Accordingly, the design or structure of each superlens 52 in each row 56 can be similar, and the design or structure of each superlens 52 in each column can be different. In this way, the optical engine 101 can use multiple superlenses 52 to transmit optical signals of different wavelengths to multiple optical fibers 150. The arrangement and association of the superlenses 52, focusing signal 110' and optical fibers 150 are shown as an example; other arrangements or configurations are possible.

[0060] Figure 14 A perspective schematic diagram of a superlens 52 according to some embodiments is shown, the superlens 52 being configured to transmit a focus signal 110' into a single optical fiber 150. Some example focus signals 110' are illustrated. Figure 14 The structure shown is similar to Figure 13 The structure shown is different in that Figure 14 All superlenses 52 in the structure are configured to direct the focusing signal 110' to the same optical fiber 150. Therefore, the design or structure of each superlens 52 can be different. In some cases, the optical fiber 150 is attached to the optical engine 101, and optical adhesive or refractive index matching compounds (not shown) can be used to facilitate attachment and / or facilitate optical signal transmission between the optical engine 101 and the optical fiber 150. According to some embodiments, the superlenses 52 in each row 56 can be configured to transmit optical signals of the same wavelength, and the superlenses 52 in each column can be configured to transmit optical signals of different wavelengths. In this way, the optical engine 101 can utilize multiple superlenses 52 to transmit optical signals of different wavelengths to a single optical fiber 150. The arrangement of the superlenses 52, focusing signal 110', and optical fiber 150 is an example; other arrangements or configurations are possible.

[0061] Figure 15An optical engine 200 according to some embodiments is shown. The optical engine 200 is similar to optical engine 101, except that it is configured to receive optical signals 210 from optical fibers, fiber arrays, FAUs, photonic components, etc. (not shown). For example, superlenses 52A-52D can receive optical signals 210A-D from optical fibers, etc., and focus the optical signals (shown as focus signals 210'AD) onto corresponding grating couplers 22A-22D. The optical signals can then be coupled to one or more waveguides 20A-20D. According to some embodiments, the optical engine 200 can transmit (e.g., output) and receive optical signals. In some cases, superlenses 52 and / or grating couplers 22 can be used for both transmitting and receiving optical signals. Other arrangements or configurations are possible.

[0062] The embodiments disclosed herein offer several advantages. Using the superlenses described herein allows for increased degrees of freedom in controlling or manipulating optical signals. For example, using superlenses in an optical engine allows for increased design flexibility in optical control characteristics (e.g., focal length, focal direction, transmission angle, wavelength, intensity distribution, etc.). According to some embodiments, superlenses with different design parameters (e.g., different superatomic shapes, sizes, distributions, spacing, etc.) allow beams from different grating couplers to be guided to a single fiber or fiber array. Superlenses facilitate efficient wavelength division multiplexing and can improve optical communication between photonic components or photonic packages. Using the superlenses described herein allows for increased design flexibility, reduced package size, improved bandwidth, and improved device performance. By forming superlenses within the support structure of an optical engine, design flexibility can be improved and manufacturing costs reduced.

[0063] In embodiments of this disclosure, the device includes a photonic layer comprising a waveguide and a grating coupler, wherein the waveguide is optically coupled to the grating coupler; an interconnect structure located above the photonic layer; an electron die bonded to the interconnect structure; and a support located above the electron die, wherein the support includes a superlens, wherein the superlens is optically coupled to the grating coupler. In embodiments, the device includes an optical fiber located above the support, wherein the optical fiber is optically coupled to the superlens. In embodiments, the focal point of the superlens is located at the optical fiber. In embodiments, the superlens includes superatoms having a cylindrical shape. In embodiments, the support includes a silicon substrate. In embodiments, the superlens includes superatoms separated by grooves in the top surface of the support. In embodiments, the superlens includes superatoms projecting from the top surface of the support. In embodiments, the superlens at least partially overlaps with the grating coupler.

[0064] In embodiments of this disclosure, the package includes a photonic interconnect structure comprising a waveguide, a first grating coupler, and a second grating coupler, wherein the first grating coupler is configured for a first wavelength, and the second grating coupler is configured for a second wavelength; an electron die attached to the photonic interconnect structure; and a support member located above the electron die, wherein the support member includes a first superlens and a second superlens, wherein the first superlens is optically coupled to the first grating coupler and configured for the first wavelength, and the second superlens is optically coupled to the second grating coupler and configured for the second wavelength. In an embodiment, the first and second superlenses are configured to focus an optical signal into a first optical fiber located above the support member. In an embodiment, the first optical fiber is part of an optical fiber array. In an embodiment, the package includes a third grating coupler and a third superlens, wherein the third grating coupler and the third superlens are configured for the first wavelength. In an embodiment, the first superlens has a first focal length above the support member, and the second superlens has a second focal length above the support member. In an embodiment, the first wavelength and the second wavelength are spaced less than 25 nm apart. In one embodiment, a first superlens is configured to focus an optical signal at a first angle above the support, and a second superlens is configured to focus an optical signal at a second angle above the support. In another embodiment, the first superlens is configured to focus an optical signal into a first optical fiber located above the support, and the second superlens is configured to focus an optical signal into a second optical fiber located above the support.

[0065] In embodiments of this disclosure, the method includes patterning a photonic material to form a photonic assembly, the photonic assembly including a waveguide and a grating coupler; forming a first interconnect structure over a first side of the photonic assembly, wherein the first interconnect structure is electrically coupled to at least one photonic assembly; bonding an electron die to the first interconnect structure; attaching a support structure to the electron die; and patterning the top surface of the support structure to form a superlens, wherein the superlens is optically coupled to the grating coupler through the support structure. In embodiments, the support structure is attached to the electron die prior to forming the superlens. In embodiments, the method includes attaching an optical fiber to the support structure, wherein the optical fiber is optically coupled to the superlens. In embodiments, the method includes forming a second interconnect structure over a second side of the photonic assembly.

[0066] Some embodiments of this application provide a semiconductor device including: a photonic layer including a waveguide and a grating coupler, the waveguide being optically coupled to the grating coupler; an interconnect structure located above the photonic layer; an electron die bonded to the interconnect structure; and a support located above the electron die, wherein the support includes a superlens optically coupled to the grating coupler.

[0067] In some embodiments, the semiconductor device further includes an optical fiber located above the support, wherein the optical fiber is optically coupled to the superlens.

[0068] In some embodiments, the superlens has a focal point at the optical fiber.

[0069] In some embodiments, the superlens includes superatoms having a cylindrical shape.

[0070] In some embodiments, the support includes a silicon substrate.

[0071] In some embodiments, the superlens includes superatoms, wherein the superatoms are separated by grooves in the top surface of the support.

[0072] In some embodiments, the superlens includes a superatom that protrudes from the top surface of the support.

[0073] In some embodiments, the superlens at least partially overlaps with the grating coupler.

[0074] Other embodiments of this application provide a package comprising: a photonic interconnect structure including a plurality of waveguides, a first grating coupler and a second grating coupler, wherein the first grating coupler is configured for a first wavelength and the second grating coupler is configured for a second wavelength; an electron die attached to the photonic interconnect structure; and a support member located above the electron die, wherein the support member includes a first superlens and a second superlens, the first superlens being optically coupled to the first grating coupler and configured for the first wavelength, and the second superlens being optically coupled to the second grating coupler and configured for the second wavelength.

[0075] In some embodiments, the first and second superlenses are configured to focus an optical signal onto a first optical fiber located above the support.

[0076] In some embodiments, the first optical fiber is part of an optical fiber array.

[0077] In some embodiments, the package further includes a third grating coupler and a third superlens, wherein the third grating coupler and the third superlens are configured for the first wavelength.

[0078] In some embodiments, the first superlens has a first focal length on the support member, and the second superlens has a second focal length on the support member.

[0079] In some embodiments, the interval between the first wavelength and the second wavelength is less than 25 nm.

[0080] In some embodiments, the first superlens is configured to focus an optical signal at a first angle over the support, and the second superlens is configured to focus an optical signal at a second angle over the support.

[0081] In some embodiments, the first superlens is configured to focus an optical signal onto a first optical fiber located above the support, and the second superlens is configured to focus an optical signal onto a second optical fiber located above the support.

[0082] Further embodiments of this application provide a method for forming a semiconductor device, comprising: patterning a photonic material to form a plurality of photonic components, the photonic components including a waveguide and a grating coupler; forming a first interconnect structure located above a first side of the plurality of photonic components, wherein the first interconnect structure is electrically coupled to at least one of the plurality of photonic components; bonding an electron die to the first interconnect structure; attaching a support structure to the electron die; and patterning the top surface of the support structure to form a superlens, wherein the superlens is optically coupled to the grating coupler through the support structure.

[0083] In some embodiments, the support structure is attached to the electron die prior to the formation of the superlens.

[0084] In some embodiments, the method further includes attaching an optical fiber to the support structure, wherein the optical fiber is optically coupled to the superlens.

[0085] In some embodiments, the method further includes forming a second interconnect structure over a second side of the plurality of photonic components.

[0086] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art will understand that they can readily use this disclosure as a basis to design or modify other processes and structures to perform the same purpose and / or achieve the same advantages of the embodiments described herein. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and alterations can be made without departing from the spirit and scope of this disclosure.

Claims

1. A semiconductor device, comprising: A photonic layer, comprising a waveguide and a grating coupler, wherein the waveguide is optically coupled to the grating coupler; Interconnection structures are located above the photonic layer; Electron die, coupled to the interconnect structure; as well as A support member is located above the electron tube die, wherein the support member includes a superlens that is optically coupled to the grating coupler.

2. The semiconductor device of claim 1 further includes an optical fiber located above the support, wherein the optical fiber is optically coupled to the superlens.

3. The semiconductor device according to claim 2, wherein, The superlens has a focal point at the optical fiber.

4. The semiconductor device according to claim 1, wherein, The superlens comprises superatoms with a cylindrical shape.

5. The semiconductor device according to claim 1, wherein, The support includes a silicon substrate.

6. The semiconductor device according to claim 1, wherein, The superlens includes superatoms, wherein the superatoms are separated by grooves in the top surface of the support.

7. The semiconductor device according to claim 1, wherein, The superlens includes a superatom, wherein the superatom protrudes from the top surface of the support.

8. The semiconductor device according to claim 1, wherein, The superlens at least partially overlaps with the grating coupler.

9. A package comprising: A photonic interconnect structure includes multiple waveguides, a first grating coupler, and a second grating coupler, wherein the first grating coupler is configured for a first wavelength, and the second grating coupler is configured for a second wavelength; Electron die, attached to the photonic interconnect structure; and A support member is located above the electron tube die, wherein the support member includes a first superlens and a second superlens, the first superlens being optically coupled to the first grating coupler and configured for the first wavelength, and the second superlens being optically coupled to the second grating coupler and configured for the second wavelength.

10. A method of forming a semiconductor device, comprising: Patterned photonic materials are used to form multiple photonic components, the photonic components including waveguides and grating couplers; A first interconnect structure is formed above a first side of the plurality of photonic components, wherein the first interconnect structure is electrically coupled to at least one photonic component of the plurality of photonic components; The electron die is bonded to the first interconnect structure; The support structure is attached to the electron die; as well as The top surface of the support structure is patterned to form a superlens, wherein the superlens is optically coupled to the grating coupler through the support structure.

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