Single-source double-beam ion source and ion processing device

Abstract

The invention relates to a single-source double-beam ion source and an ion processing device, the single-source double-beam ion source comprises a base and an electrode assembly, the electrode assembly comprises an anode, two cathodes and two insulating parts, the anode is used for being connected with an anode of a power supply, the anode is provided with an air inlet hole, the air inlet hole is used for introducing gas, the two cathodes are symmetrically arranged on the two sides of the anode, and the two insulating parts are arranged on the base. The cathodes are used for being connected with a negative electrode of a power supply or being grounded, the cathodes are provided with ion emitting holes, the ion emitting holes are used for leading out ion beams, the two insulating parts correspond to the two cathodes respectively, the two insulating parts are symmetrically arranged on the two sides of the anode, the insulating parts are connected with the corresponding cathodes and the anode, and each insulating part and the corresponding cathode and anode define an ionization cavity. The two ionization cavities are both communicated with the air inlet hole and are respectively communicated with the two ion exit holes. Double-station synchronous ion machining is achieved under the condition of a single ion source, efficiency is improved, cost is reduced, the structure is compact, and meanwhile it is guaranteed that ionology parameters and machining effects of the two stations are consistent.

Description

Technical Field

[0001] This invention relates to the field of ion processing technology, and in particular to a single-source dual-beam ion source and an ion processing apparatus. Background Technology

[0002] Argon ion polishing (or argon ion cutting) machines are precision sample preparation devices that use high-energy argon ion beams to physically bombard material surfaces, removing surface layers and obtaining smooth, undamaged surfaces. Because this technology removes atomic layers through physical sputtering by bombarding the material surface with high-energy inert gas ions (such as argon ions), rather than through chemical corrosion or mechanical grinding, this method does not alter the material's crystal structure or introduce additional stress, thus avoiding strain, scratches, and thermal effects. These devices are widely used in materials science, electron microscopy sample preparation, battery materials, semiconductor manufacturing, geological core research, and surface engineering.

[0003] In materials analysis, argon ion polishing is commonly used for preparing samples for scanning electron microscopy (SEM), transmission electron microscopy (TEM), and electron backscatter diffraction (EBSD). Through low-angle ion cutting and fine polishing, mechanically damage-free cross-sections can be obtained for observing grain, interface, and interlayer structures. In semiconductor and microelectronics manufacturing, this technology can be used for cross-section preparation, thickness calibration, and surface contamination removal of multilayer thin films, thereby revealing material structure and interface characteristics. In geological and energy research, ion polishing can precisely cut samples such as shale, sandstone, and carbonate rocks to obtain true pore structures and mineral interface morphologies, providing reliable data for porosity and wettability studies. Furthermore, argon ion polishing can also be applied to thin film surface cleaning and surface finishing of biomaterials.

[0004] Existing argon ion (or other gas) polishing / cutting machines all use a single ion source, or two or three ion sources surrounding the same workstation to form polishing or cutting. However, regardless of the number of ion sources, only one sample can be processed at a time, which limits the number of samples that can be prepared. When batch sample preparation is required for surface polishing or ion cutting of cross sections, the equipment purchase, time cost, energy consumption, and floor space all increase linearly with the production capacity.

[0005] In ion polishing and cutting, improving efficiency and reducing costs are technical problems that urgently need to be solved in this field. Summary of the Invention

[0006] To address this, the present invention provides a single-source dual-beam ion source and an ion processing device, which enables simultaneous dual-station ion processing under single-source conditions, thereby improving efficiency, reducing costs, and ensuring consistency in ionic parameters and sample cutting and polishing effects between the two stations.

[0007] To address the aforementioned technical problems, this invention provides a single-source dual-beam ion source, comprising a base and an electrode assembly. The electrode assembly is mounted on the base and includes an anode, two cathodes, and two insulating components. The anode is used to connect to the anode of a power supply and has an inlet for introducing gas. The two cathodes are symmetrically arranged on both sides of the anode along a first direction and are used to connect to the negative terminal of the power supply or to ground. The cathodes have ion emission holes for extracting ion beams. The two insulating components correspond to the two cathodes and are symmetrically arranged on both sides of the anode along the first direction. The insulating components connect the corresponding cathode and the anode. Each insulating component, together with the corresponding cathode and anode, encloses an ionization cavity. Both ionization cavities are connected to the inlet and the two ion emission holes, respectively.

[0008] Furthermore, the base is provided with a receiving hole extending along the first direction; The anode, the cathode, and the insulating component are all hollow rotating structures with their axes extending along the first direction; the anode is located at the center of the receiving hole, the two cathodes are respectively connected to the two ends of the receiving hole, and an air intake cavity is formed between the electrode assembly and the inner wall of the receiving hole, the air intake cavity being connected to the air intake hole.

[0009] Furthermore, the base is a metal base, and the insulating component is a ceramic component.

[0010] The present invention also provides an ion processing apparatus, including a vacuum chamber and one or more dual-station processing units disposed within the vacuum chamber. Each dual-station processing unit includes a single-source dual-beam ion source, a power supply, and two support mechanisms. The two support mechanisms correspond to the two ion emission holes respectively, and the two support mechanisms are symmetrically disposed on both sides of the single-source dual-beam ion source along the first direction. The support mechanisms are used to carry samples.

[0011] Furthermore, the plurality of dual-station processing units are arranged sequentially along a second direction, which is perpendicular to the first direction.

[0012] Furthermore, the supporting mechanism includes a cutting table, the cutting table being adjustable in height along the vertical direction and / or the cutting table being adjustable in position along the first direction and / or the cutting table being adjustable in angle around the second direction and / or the cutting table being continuously reciprocating along the second direction and / or the cutting table being continuously reciprocating around the vertical direction, wherein the second direction is perpendicular to the first direction, and both the first direction and the second direction are horizontal directions.

[0013] Furthermore, when the cutting stage is adjusted in the first direction, the distance between the edge of the area to be cut of the sample and the single-source dual-beam ion source is 0.1-5 cm; When the angle of the cutting table is adjusted, the angle between the table surface and the first direction is 0-60 degrees; When the cutting table reciprocates along the second direction, the distance between the center of the table surface and the central axis of the ion beam is 0-10 mm. When the cutting table oscillates back and forth in the vertical direction, the angle between the axis of symmetry of the sample's area to be cut and the first direction is 0-60 degrees.

[0014] Furthermore, the cutting stage is provided with an ion beam baffle protruding from its surface on the side near the corresponding ion emission port.

[0015] Furthermore, the supporting mechanism is a polishing table, the polishing table can be adjusted in height along the vertical direction and / or the polishing table can be adjusted in position along the first direction and / or the polishing table can be adjusted in angle around the second direction and / or the polishing table can be continuously reciprocated along the second direction and / or the polishing table can be continuously rotated around the vertical direction, wherein the second direction is perpendicular to the first direction, and both the first direction and the second direction are horizontal directions.

[0016] Furthermore, when the polishing stage is adjusted in the first direction, the distance between the edge of the area to be polished of the sample and the single-source dual-beam ion source is 0.1-5 cm; When the polishing table is adjusted around the second direction, the angle between the table surface and the first direction is 0-60 degrees. When the polishing table reciprocates along the second direction, the distance between the center of the table surface and the central axis of the ion beam is 0-30 mm. The polishing table can rotate continuously in a full circumference around the vertical direction, or rotate unidirectionally or alternately in the forward and reverse directions.

[0017] Compared with the prior art, the above-mentioned technical solution of the present invention has the following advantages: The single-source dual-beam ion source and ion processing device of the present invention can form two ion beams by setting one anode and two cathodes. During ion processing, the two ion beams can process two samples simultaneously, realizing dual-station synchronous ion processing under single ion source conditions, which improves efficiency, reduces cost, has a compact structure, and ensures that the ionic parameters and processing effects of the two stations are consistent. Attached Figure Description

[0018] To make the content of this invention easier to understand, the invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0019] Figure 1This is a front view of the single-source dual-beam ion source disclosed in Embodiment 1 of the present invention; Figure 2 This is a front view of the ion processing apparatus disclosed in Embodiment 2 of the present invention; Figure 3 This is a side view of the height adjustment of the cutting table in Embodiment 2 of the present invention; Figure 4 This is a top view of the cutting table adjustment position in Embodiment 2 of the present invention; Figure 5 This is a side view of the cutting table adjusting angle in Embodiment 2 of the present invention; Figure 6 This is a top view of the reciprocating translation of the cutting table in Embodiment 2 of the present invention; Figure 7 This is a top view of the reciprocating oscillation of the cutting table in Embodiment 2 of the present invention; Figure 8 This is a front view of the ion processing apparatus disclosed in Embodiment 3 of the present invention; Figure 9 This is a side view of the polishing table height adjustment in Embodiment 3 of the present invention; Figure 10 This is a top view of the polishing table adjustment position in Embodiment 3 of the present invention; Figure 11 This is a side view of the polishing table adjustment angle in Embodiment 3 of the present invention; Figure 12 This is a top view of the reciprocating translation of the polishing table in Embodiment 3 of the present invention; Figure 13 This is a top view of the polishing table rotating around its entire circumference in Embodiment 3 of the present invention; Figure 14 This is a top view of the ion processing apparatus disclosed in Embodiment 4 of the present invention.

[0020] Among them, A is the vacuum chamber; B is the dual-station processing unit; 1 is the single-source dual-beam ion source; 11 is the base; 111 is the air inlet chamber; 12 is the anode; 121 is the air inlet; 13 is the cathode; 131 is the ion emission port; 14 is the insulating component; 141 is the ionization chamber; 15 is the ion beam; 2 is the power supply; 3 is the supporting mechanism; 31 is the ion beam baffle; 4 is the sample; 41 is the cross-section. Detailed Implementation

[0021] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can better understand and implement the present invention. However, the embodiments described are not intended to limit the present invention.

[0022] Example 1: See Figure 1 As shown, this invention discloses an embodiment of a single-source dual-beam ion source.

[0023] The single-source dual-beam ion source 1 includes a base 11 and an electrode assembly. The electrode assembly is mounted on the base 11 and includes an anode 12, two cathodes 13, and two insulating components 14. The anode 12 is used to connect to the anode of the power supply 2 and has an inlet 121 for introducing gas. The two cathodes 13 are symmetrically arranged on both sides of the anode 12 along a first direction and are used to connect to the negative terminal of the power supply 2 or to ground. The cathodes 13 are equipped with ion emission capabilities. The ion emission port 131 is used to draw out the ion beam 15. The two insulating members 14 correspond to the two cathodes 13 respectively, and the two insulating members 14 are symmetrically arranged on both sides of the anode 12 along the first direction. The insulating members 14 connect the corresponding cathode 13 and the anode 12. Each insulating member 14, together with the corresponding cathode 13 and anode 12, encloses an ionization cavity 141. Both ionization cavities 141 are connected to the air inlet 121 and are respectively connected to the two ion emission ports 131.

[0024] In the above text, the base 11 serves as the mounting platform for the entire electrode assembly. The anode 12 is connected to the positive terminal of the power supply, and the cathode 13 is connected to the negative terminal or grounded, thus providing a potential between the anode 12 and cathode 13. This generates an ionizing electric field in the ionization chamber 141. The gas to be ionized is introduced into the ionization chamber 141 through the inlet 121 of the anode 12. Under the influence of the ionizing electric field within the ionization chamber 141, the gas is ionized, producing ions that are accelerated towards the two cathodes 13 under the influence of the potential. These ions then form two symmetrical ion beams 15 through the two ion exit holes 131. The insulating component 14 serves two purposes: firstly, it isolates the cathode 13 from the anode 12; secondly, it, together with the corresponding cathode 13 and anode 12, encloses the ionization chamber 141, providing a closed reaction space for gas ionization.

[0025] Specifically, the gas to be ionized (such as argon, oxygen, other gases, or a mixture of two gases) is evenly distributed to two independent ionization chambers 141 through the inlet 121 of the anode 12. After the power supply 2 is turned on, the power supply 2 applies a voltage (such as 0-30 kV) to the anode 12. A strong electric field is formed in the ionization chamber 141 between the anode 12 and the cathode 13. The gas to be ionized is ionized into charged ions in the ionization chamber 141. The ions in the two ionization chambers 141 are respectively extracted through the ion emission holes 131 on the corresponding cathodes 13, and finally two independent ion beams 15 are formed, realizing the single-source dual-beam function.

[0026] By using the above technical solution, two ion beams 15 can be formed by setting one anode and two cathodes, realizing dual ion beams 15 under single ion source conditions. The ion source structure is compact and the cost is relatively low.

[0027] In this embodiment, the base 11 is provided with a receiving hole extending along the first direction; The anode 12, the cathode 13 and the insulating component 14 are all hollow rotating structures with their axes extending along the first direction. The anode 12 is located at the center of the receiving hole, and the two cathodes 13 are respectively connected to the two ends of the receiving hole. An air intake chamber 111 is formed between the electrode assembly and the inner wall of the receiving hole, and the air intake chamber 111 is connected to the air intake hole 121.

[0028] In the above text, the central axis of the receiving hole of the base 11 extends along the first direction. The receiving hole has a cavity and two orifices on both sides of the cavity in the axial direction. The diameter of the cavity is larger than the diameter of the orifices. The anode 12, cathode 13 and insulating member 14 are all rotating structures. The anode 12, cathode 13, insulating member 14 and receiving hole are arranged coaxially. The anode 12 is located at the center of the cavity of the receiving hole. The two cathodes 13 are respectively connected to the two orifices of the receiving hole. Multiple air inlets 121 are evenly distributed around its central axis on the anode 12. The air inlets 121 extend radially along the anode 12. The ion emission holes 131 extend axially along the cathode 13. The anode 12, cathode 13 and insulating member 14 are also cylindrical structures after being connected. The outer wall of the cylindrical structure is spaced a certain distance from the inner wall of the receiving hole to form an annular air inlet cavity 111.

[0029] Specifically, the base 11 is provided with receiving holes, serving as the installation space and reference for the entire electrode assembly, simplifying the installation process and reducing coaxiality errors. The anode 12, cathode 13, and insulating component 14 are all rotating structures, ensuring the uniformity of the electric field. The annular air inlet chamber 111 enables the gas to uniformly surround the electrode assembly at 360°, allowing the gas to be ionized to enter the ionization chamber 141 uniformly from multiple air inlets 121.

[0030] With the above technical solution, the base, anode, cathode and insulating components are all rotating structures, and the anode, cathode and insulating components are located in the receiving hole of the base, which ensures the uniformity of the electric field, facilitates installation and achieves uniform air intake.

[0031] In this embodiment, the base 11 is a metal base and the insulating component 14 is a ceramic component.

[0032] In the above text, the base 11 is made of metal, which is a good conductor of heat. The insulating component 14 is made of ceramic, which has the properties of insulation and high temperature resistance, and can provide electrical insulation at temperatures up to at least 500°C.

[0033] Specifically, ion sources tend to generate heat during operation. Using a metal base allows for timely heat dissipation by transferring the heat generated inside the ion source. Even when the internal temperature of the ion source is high, the ceramic components maintain electrical insulation, ensuring reliable insulation between the anode 12 and the cathode 13.

[0034] The above technical solution uses a metal base and ceramic insulation, which can address the problem of heat generation in the ion source.

[0035] Example 2: See Figures 2 to 7 As shown, this is an embodiment of the ion processing apparatus disclosed in this invention.

[0036] The ion processing apparatus includes a vacuum chamber A and a dual-station processing unit B located within the vacuum chamber A. Each dual-station processing unit B includes a single-source dual-beam ion source 1, a power supply 2, and two support mechanisms 3. The two support mechanisms 3 correspond to the two ion emission holes 131, and the two support mechanisms 3 are symmetrically arranged on both sides of the single-source dual-beam ion source 1 along the first direction. The support mechanisms 3 are used to carry the sample 4.

[0037] In the above description, vacuum chamber A uses a pumping system to expel internal gases, creating a vacuum environment and sufficient space to generate and accelerate ions for sample processing, thus eliminating air interference during ion processing. The vacuum level of the vacuum chamber can be, for example, 9*10⁻⁵ mbar, or other levels. Vacuum chamber A is made of, but is not limited to, stainless steel. Power supply 2 generates a potential between anode 12 and cathode 13. The support mechanism 3 carries the sample 4. Each dual-station processing unit B has two support mechanisms 3, allowing the same single-source dual-beam ion source 1 to process two samples 4 simultaneously.

[0038] Specifically, the stainless steel vacuum chamber has a high surface finish, making it less likely for gas to remain during vacuuming. During ion processing, one sample is placed on each support mechanism 3, and the two symmetrical ion beams 15 generated by each single-source dual-beam ion source 1 are directed towards the samples 4 on the two support mechanisms 3 on either side, thereby processing the cross-section 41 on the two samples 4 and achieving simultaneous processing of the two samples.

[0039] By applying the above technical solution to the ion processing device, the two ion beams 15 can process two samples simultaneously during ion processing, realizing synchronous ion processing at two stations under single ion source conditions, which improves efficiency, reduces cost, and has a compact structure, while ensuring that the ion parameters and processing effects of the two stations are consistent.

[0040] In this embodiment, the bearing mechanism 3 is a cutting table. The cutting table can be adjusted in height along the vertical direction and / or the cutting table can be adjusted in position along the first direction and / or the cutting table can be adjusted in angle around the second direction and / or the cutting table can continuously reciprocate along the second direction and / or the cutting table can continuously reciprocate around the vertical direction. The second direction is perpendicular to the first direction, and both the first direction and the second direction are horizontal.

[0041] In the above text, the cutting stage is used to place and support sample 4. The vertical height adjustment of the cutting stage means that the stage surface can be raised and lowered. After adjusting to the desired height, the cutting stage is held at that height before ion cutting. The position adjustment of the cutting stage along the first direction means that the stage surface can be translated. After adjusting to the desired position, the cutting stage is held at that position before ion cutting. The angle adjustment of the cutting stage along the second direction means that the stage surface can switch between horizontal and tilted states, and the tilt angle is adjustable. After adjusting to the horizontal or desired tilted state, the cutting stage is held at that state before ion cutting. The continuous reciprocating motion of the cutting stage along the second direction means that the stage surface can reciprocate along the direction perpendicular to the ion beam emission direction. Sample 4 on the cutting stage is translated back and forth while being ion cut. The continuous reciprocating oscillation of the cutting stage along the vertical direction means that the stage surface can oscillate around the vertical direction. Sample 4 on the cutting stage is oscillated while being ion cut.

[0042] Specifically, the cutting stage is height-adjustable, allowing the sample to be positioned within the ion beam's effective range. The stage's position is adjustable to meet the ion beam energy requirements of different products; the closer the distance, the greater the energy of the ion beam acting on the product, and vice versa. The cutting stage's angle is adjustable, allowing for the adjustment of the cutting angle of sample 4 to meet the cutting requirements of different samples. The cutting stage can perform continuous reciprocating translation and / or continuous reciprocating oscillation, causing different areas of sample 4 to cyclically oscillate within the effective range of the ion beam 15, thus cutting different areas of the sample.

[0043] The above technical solutions meet the different cutting requirements of different samples, and the cut cross-sections are used for electron microscope surface analysis or other purposes.

[0044] In this embodiment, when the cutting stage is adjusted along the first direction, the distance between the edge of the area to be cut and the ion emission port is 0.1-5 cm. When adjusting the angle of the cutting table, the angle between the table surface and the first direction is 0-60 degrees. When the cutting stage reciprocates along the second direction, the distance between the center of the stage and the central axis of the ion beam is 0-10 mm. When the cutting table reciprocates around the vertical direction, the angle between the axis of symmetry of the area to be cut of the sample and the first direction is 0-60 degrees.

[0045] In the above description, the distance between the cutting stage and the corresponding ion emission port 131 is between 0.1 and 5 cm. That is, after the ion beam 15 is emitted from the ion emission port 131, it travels 0.1 to 5 cm before reaching the cutting stage. For example, the distance can be 0.5 cm, 0.1 cm, 0.7 cm, 0.8 cm, 0.9 cm, 1 cm, 1.1 cm, 1.2 cm, 1.3 cm, 1.4 cm, 1.5 cm, 1.6 cm, 1.7 cm, 2.8 cm, 3.9 cm, or 5 cm.

[0046] When the cutting table surface is adjusted around the second direction, the angle between the cutting table surface and the first direction can be adjusted to 0 degrees, 10 degrees, 20 degrees, 30 degrees, 40 degrees, 50 degrees or 60 degrees.

[0047] When the cutting stage continuously reciprocates along the second direction mentioned above, the maximum distance between the center of the stage and the central axis of the ion beam is 10 mm. In other words, the perpendicular distance between the cutting stage and the central axis of the ion beam during its reciprocating translation within a certain range is no greater than 10 mm. This maximum distance could be, for example, 10 mm, 8 mm, 6 mm, or 4 mm.

[0048] When the cutting table continuously oscillates back and forth in the vertical direction, the angle between the axis of symmetry of the area to be cut of sample 4 and the first direction is 0-60 degrees. That is, the cutting table oscillates back and forth within a certain range. The above angle can be 15 degrees, 20 degrees, 25 degrees, 30 degrees, 35 degrees, 40 degrees, 45 degrees or 60 degrees.

[0049] Specifically, after the ion beam 15 exits from the ion emission port 131, it will slightly diverge within the vacuum chamber A, and its energy will decrease with increasing propagation distance. If the distance is less than 0.1 cm, although the energy density is high, the close proximity can easily lead to physical collisions between the sample surface and the ion emission port, potentially damaging the port or contaminating the sample surface. If the distance is greater than 5 cm, the ion beam 15 diverges severely, resulting in a significant decrease in energy density. This not only leads to a substantial reduction in sample processing efficiency but also affects processing accuracy. The distance between the support mechanism 3 and the ion emission port 131 is designed according to the size of the sample 4.

[0050] The cutting stage has a tilt angle ranging from 0 to 60 degrees, which covers most mainstream cutting scenarios. The 0° horizontal position is suitable for cutting conventional flat sections; the large tilt angle of 30-60° can improve the sputtering efficiency of ion beams on thick metal samples and other materials, and accelerate the material removal speed.

[0051] The reciprocating motion and / or oscillation of the cutting stage is designed to increase the effective range of the ion beam. A larger range of reciprocating motion and / or oscillation results in a larger effective range of the ion beam, while a smaller range results in a smaller effective range. The reciprocating translation range of the cutting stage is 0-10 mm, and the reciprocating oscillation range is 0-60 degrees, enabling ion cutting over a relatively large area.

[0052] The above technical solution sets the position adjustment range, angle adjustment range, reciprocating translation range, and reciprocating swing range of the cutting stage within a certain range, making it suitable for ion cutting of various samples.

[0053] In this embodiment, the cutting stage is provided with an ion beam baffle 31 protruding from its surface on the side near the corresponding ion emission port 131. In the above text, the ion beam baffle 31 is used to block the ion beam 15 directed at the sample 4. The ion beam baffle 31 will cover the non-cut area of ​​the sample 4, allowing only the part of the sample 4 that is slightly higher than the ion beam baffle 31 or the area corresponding to the baffle notch to be exposed to the ion beam 15.

[0054] By using the above technical solution, an ion beam baffle is set up to achieve ion cutting of the sample.

[0055] Example 3: See Figures 8 to 13 As shown, another embodiment of the ion processing apparatus disclosed in this invention.

[0056] The rest is the same as in Embodiment 1, except that the bearing mechanism 3 is a polishing table. The polishing table can be adjusted in height along the vertical direction and / or the polishing table can be adjusted in position along the first direction and / or the polishing table can be adjusted in angle around the second direction and / or the polishing table can continuously reciprocate along the second direction and / or the polishing table can continuously rotate around the vertical direction. The second direction is perpendicular to the first direction, and both the first direction and the second direction are horizontal.

[0057] In the above text, the polishing table is used to place and support sample 4. The polishing table's height can be adjusted vertically, meaning the table surface can be raised and lowered. After adjusting to the desired height, the table is held at that height before ion polishing. The polishing table's position can be adjusted along the first direction, meaning the table surface can be translated. After adjusting to the desired position, the table is held at that position before ion polishing. The polishing table's angle can be adjusted around the second direction, meaning the table surface can switch between horizontal and tilted states, and the tilt angle is adjustable. After adjusting to the horizontal or desired tilted state, the table is held at that state before ion polishing. The polishing table can continuously reciprocate along the second direction, meaning the table surface can reciprocate along the direction perpendicular to the ion beam emission direction. Sample 4 on the polishing table reciprocates while being ion polished. The polishing table can continuously rotate a full circumference around the first direction, meaning the table surface can rotate around the vertical direction. Sample 4 on the polishing table rotates while being ion polished.

[0058] Specifically, the polishing stage is height-adjustable, allowing the sample to be positioned within the ion beam's effective range. The stage's position is also adjustable to meet the ion beam energy requirements of different products; the closer the distance, the greater the energy of the ion beam acting on the product, and vice versa. The stage's angle is adjustable, allowing for the adjustment of the polishing angle of sample 4 to meet the polishing requirements of different samples. The stage can perform continuous reciprocating translation and / or continuous reciprocating oscillation, causing different areas of sample 4 to cyclically oscillate within the effective range of the ion beam 15, thus polishing different areas of the sample.

[0059] The above technical solutions can meet the different polishing requirements of different samples, and the polished cross-section can be used for electron microscope surface analysis or other purposes.

[0060] In this embodiment, when the polishing table is adjusted in the first direction, the distance between the edge of the area to be polished and the ion emission hole is 0.1-5 cm. When adjusting the angle of the polishing table, the angle between the table surface and the first direction is 0-60 degrees. When the polishing stage reciprocates along the second direction, the distance between the center of the stage surface and the central axis of the ion beam is 0-30 mm. The polishing table can rotate unidirectionally or alternately in both directions when it rotates around the entire vertical direction.

[0061] In the above description, the distance between the polishing stage and the corresponding ion emission port 131 is between 0.1 and 5 cm. That is, after the ion beam 15 is emitted from the ion emission port 131, it travels 0.1 to 5 cm before reaching the polishing stage. For example, the distance can be 0.5 cm, 0.1 cm, 0.7 cm, 0.8 cm, 0.9 cm, 1 cm, 1.1 cm, 1.2 cm, 1.3 cm, 1.4 cm, 1.5 cm, 1.6 cm, 1.7 cm, 2.8 cm, 3.9 cm, or 5 cm.

[0062] When the surface of the polishing table is adjusted around the second direction, the angle between the surface of the polishing table and the first direction can be adjusted to 0 degrees, 10 degrees, 20 degrees, 30 degrees, 40 degrees, 50 degrees or 60 degrees.

[0063] When the polishing stage continuously reciprocates along the second direction mentioned above, the maximum distance between the center of the stage surface and the central axis of the ion beam is 30 mm. That is, the vertical distance between the polishing stage and the central axis of the ion beam during its reciprocating translation within a certain range is no greater than 30 mm. The maximum distance mentioned above can be, for example, 30 mm, 25 mm, 20 mm, 15 mm, 10 mm, 8 mm, 6 mm, or 4 mm.

[0064] When the polishing table rotates around its full vertical circumference, it can rotate in one direction or alternate between clockwise and counterclockwise directions. That is, the polishing table rotates continuously in a clockwise direction, or it can rotate one full clockwise rotation, then one full counterclockwise rotation, then one full clockwise rotation, then one full counterclockwise rotation, and so on.

[0065] Specifically, after the ion beam 15 exits from the ion emission port 131, it will slightly diverge within the vacuum chamber A, and its energy will decrease with increasing propagation distance. If the distance is less than 0.1 cm, although the energy density is high, the close proximity can easily lead to physical collisions between the sample surface and the ion emission port, potentially damaging the port or contaminating the sample surface. If the distance is greater than 5 cm, the ion beam 15 diverges severely, resulting in a significant decrease in energy density. This not only leads to a substantial reduction in sample processing efficiency but also affects processing accuracy. The distance between the support mechanism 3 and the ion emission port 131 is designed according to the size of the sample 4.

[0066] The polishing stage has a tilt angle ranging from 0 to 60 degrees, which covers most mainstream polishing scenarios. The 0° horizontal position is suitable for polishing conventional flat cross-sections; the large tilt angle of 30-60° can improve the sputtering efficiency of ion beams on thick metal samples and other materials, and accelerate the material removal speed.

[0067] The reciprocating motion of the polishing table is designed to increase the effective range of the ion beam. A larger reciprocating motion range results in a larger effective range of the ion beam, and vice versa. The reciprocating translation range of the polishing table is 0-30 mm, enabling ion polishing over a relatively large area.

[0068] The above technical solution sets the position adjustment range, angle adjustment range, and reciprocating translation range of the polishing table within a certain range, making it suitable for ion polishing of various samples.

[0069] Example 4: See Figure 14 As shown, another embodiment of the ion processing apparatus disclosed in this invention.

[0070] The rest is the same as in Embodiment 2 or 3, except that the above-mentioned ion processing apparatus includes three of the above-mentioned dual-station processing units B.

[0071] As described above, based on actual production needs, three dual-station processing units B are set up in vacuum chamber A, which is suitable for applications requiring higher sample preparation throughput. In this invention, the three dual-station processing units B are placed side by side in the same vacuum chamber A, so that the three ion sources can achieve three sources, six beams, and six stations.

[0072] In other embodiments, the ion processing apparatus may also include two, four, or five other numbers of the aforementioned dual-station processing units, as designed as needed.

[0073] In this embodiment, the plurality of dual-station processing units B are arranged sequentially along a second direction, which is perpendicular to the first direction.

[0074] In the above text, the single-source dual-beam ion sources of multiple dual-station processing units B are arranged sequentially along the direction perpendicular to the emission direction of the ion beam 15.

[0075] Specifically, the dimension of each dual-station processing unit B along the first direction is larger than the dimension along the second direction. Multiple dual-station processing units B are arranged sequentially along the second direction. The dimension of the entire ion processing device along the first direction will not be too large, the layout is more reasonable, and the ion beams 15 of different dual-station processing units B are parallel to each other and do not interfere with each other.

[0076] With the above technical solution, multiple dual-station processing units are arranged sequentially along the direction perpendicular to the emission direction of the ion beam 15, resulting in a more reasonable layout, and different dual-station processing units do not interfere with each other.

[0077] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A single-source dual-beam ion source, characterized in that, The device includes a base and an electrode assembly. The electrode assembly is mounted on the base and includes an anode, two cathodes, and two insulating members. The anode is used to connect to the anode of a power source and has an air inlet for introducing gas. The two cathodes are symmetrically arranged on both sides of the anode along a first direction and are used to connect to the negative terminal of the power source or to ground. The cathodes have ion emission holes for drawing out ion beams. The two insulating members correspond to the two cathodes respectively and are symmetrically arranged on both sides of the anode along the first direction. The insulating members connect the corresponding cathode and the anode. Each insulating member, together with the corresponding cathode and anode, encloses an ionization cavity. Both ionization cavities are connected to the air inlet and are also connected to the two ion emission holes respectively.

2. The single-source dual-beam ion source according to claim 1, characterized in that, The base is provided with a receiving hole extending along the first direction; The anode, the cathode, and the insulating component are all hollow rotating structures with their axes extending along the first direction; the anode is located at the center of the receiving hole, the two cathodes are respectively connected to the two ends of the receiving hole, and an air intake cavity is formed between the electrode assembly and the inner wall of the receiving hole, the air intake cavity being connected to the air intake hole.

3. The single-source dual-beam ion source according to claim 1, characterized in that, The base is a metal base, and the insulating component is a ceramic component.

4. An ion processing apparatus, characterized in that, The system includes a vacuum chamber and one or more dual-station processing units disposed within the vacuum chamber. Each dual-station processing unit includes a single-source dual-beam ion source as described in any one of claims 1 to 3, a power supply, and two support mechanisms. The two support mechanisms correspond to the two ion emission holes respectively, and the two support mechanisms are symmetrically disposed on both sides of the single-source dual-beam ion source along the first direction. The support mechanisms are used to carry samples.

5. The ion processing apparatus according to claim 4, characterized in that, The plurality of dual-station processing units are arranged sequentially along a second direction, which is perpendicular to the first direction.

6. The ion processing apparatus according to claim 4, characterized in that, The supporting mechanism includes a cutting table, the height of which can be adjusted vertically and / or the position of which can be adjusted along the first direction and / or the angle of which can be adjusted around the second direction and / or the cutting table can move continuously back and forth along the second direction and / or the cutting table can swing continuously back and forth around the vertical direction, wherein the second direction is perpendicular to the first direction, and both the first direction and the second direction are horizontal.

7. The ion processing apparatus according to claim 6, characterized in that, When the cutting stage is adjusted along the first direction, the distance between the edge of the area to be cut of the sample and the single-source dual-beam ion source is 0.1-5 cm. When the angle of the cutting table is adjusted, the angle between the table surface and the first direction is 0-60 degrees; When the cutting table reciprocates along the second direction, the distance between the center of the table surface and the central axis of the ion beam is 0-10 mm. When the cutting table oscillates back and forth in the vertical direction, the angle between the axis of symmetry of the sample's area to be cut and the first direction is 0-60 degrees.

8. The ion processing apparatus according to claim 6, characterized in that, The cutting stage is provided with an ion beam baffle protruding from its surface on the side near the corresponding ion emission port.

9. The ion processing apparatus according to claim 4, characterized in that, The supporting mechanism is a polishing table, which can be adjusted in height along the vertical direction and / or the position of the polishing table can be adjusted along the first direction and / or the angle of the polishing table can be adjusted around the second direction and / or the polishing table can move continuously back and forth along the second direction and / or the polishing table can rotate continuously around the vertical direction, wherein the second direction is perpendicular to the first direction, and both the first direction and the second direction are horizontal directions.

10. The ion processing apparatus according to claim 9, characterized in that, When the polishing stage is adjusted in the first direction, the distance between the edge of the area to be polished of the sample and the single-source dual-beam ion source is 0.1-5 cm. When the polishing table is adjusted around the second direction, the angle between the table surface and the first direction is 0-60 degrees. When the polishing table reciprocates along the second direction, the distance between the center of the table surface and the central axis of the ion beam is 0-30 mm. The polishing table can rotate continuously in a full circumference around the vertical direction, or rotate unidirectionally or alternately in the forward and reverse directions.

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