Preparation method and application of ultra-thin glass through hole TGV

Abstract

The invention discloses a preparation method and application of an ultra-thin glass through hole TGV, and belongs to the technical field of three-dimensional integration, MEMS devices and advanced packaging. According to the technical scheme, the front face of the silicon wafer is etched to form a high-density blind hole template, then oxidation is carried out for a long time in a wet oxygen environment, silicon around the blind holes is converted into thermal growth SiO2 in situ, then copper columns are prepared in the blind holes to form a copper / SiO2 coplanar bonding level interface, mixed bonding with Cu-Cu + SiO2-SiO2 of a butt-joint wafer is achieved, silicon is removed from the back face till copper is exposed, and finally the high-density blind hole silicon wafer is obtained. And forming the ultra-thin TGV through structure. Different from the route that holes are firstly formed in glass in the prior art, the method does not directly process ultra-thin glass, blind holes and vitrification are completed on silicon, and then metallization and bonding are performed, so that coplanarity / roughness and mass production consistency required by an ultra-thin TGV are obtained on a 8-12-inch silicon platform.

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