Hot plug bias bleeder circuit and artificial intelligence server
By designing a bias discharge circuit that integrates bias voltage output and energy discharge functions, the problems of circuit complexity and numerous components during high-voltage hot-swapping are solved, achieving circuit simplification and cost savings.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- INVENTCHIP TECH CO LTD
- Filing Date
- 2026-01-26
- Publication Date
- 2026-05-19
AI Technical Summary
During high-voltage hot-swapping, existing technologies involve complex circuits, numerous components, and large space requirements, making it difficult to effectively address the challenges of system protection and monitoring.
A bias discharge circuit integrating bias voltage output and energy discharge functions was designed. It provides bias voltage when server load components are hot-plugged and discharges energy when hot-plugged, simplifying the circuit structure and reducing the number of components used.
It reduces circuit complexity, decreases the number of components used and the space occupied, saves costs, and achieves safe control during high-voltage hot-swapping.
Smart Images
Figure CN122064632A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of power supply technology, and in particular to a hot-swappable bias discharge circuit and an artificial intelligence server. Background Technology
[0002] As AI workloads intensify, GPUs in server environments are driving unprecedented power demands, prompting a shift in rack-level power supply architectures from low-voltage AC (such as 220V / 380V) to 800V to reduce system power consumption and directly connect to green energy and energy storage systems.
[0003] This higher voltage presents new challenges for system protection and monitoring, especially during hot-swapping.
[0004] In high-voltage hot-swap control, the relevant technologies achieve the corresponding functions through independent high-voltage auxiliary power supplies and high-voltage capacitor energy discharge modules. The circuits are not only complex, but also have many components and occupy a large amount of space. Summary of the Invention
[0005] In view of this, this disclosure proposes a hot-swappable bias discharge circuit, which is applied to server load components, wherein...
[0006] The first terminal of the bias discharge circuit, the first terminal of the first capacitor, and the first terminal of the server load component are all connected to the high-voltage input bus.
[0007] The second terminal of the bias discharge circuit, the second terminal of the first capacitor, and the second terminal of the server load component are all connected to the low-voltage input bus. A control switch is provided on the low-voltage input bus between the second terminal of the bias discharge circuit and the second terminal of the first capacitor.
[0008] The bias discharge circuit is used for:
[0009] When the server load component is hot-plugged, a bias voltage is provided to the subsequent circuit module according to the voltage input by the high-voltage input bus;
[0010] When the server load component is hot-swapped, the energy of the first capacitor is released.
[0011] In one possible implementation, the bias discharge circuit includes a first resistor, a second resistor, a third resistor, a fourth resistor, a first diode, a first transistor, a second capacitor, a current source, and a first switch, wherein...
[0012] Both the first terminal of the first resistor and the first terminal of the second resistor are connected to the high-voltage input bus.
[0013] The second terminal of the first resistor is connected to the drain of the first transistor.
[0014] The second end of the second resistor is connected to the first end of the third resistor.
[0015] The common node of the gate of the first transistor, the second terminal of the third resistor, and the negative terminal of the first diode is used to output the bias voltage.
[0016] The source of the first transistor is connected to the first terminal of the fourth resistor.
[0017] The second end of the fourth resistor is connected to the first end of the second capacitor and the positive terminal of the current source.
[0018] The negative terminal of the current source is connected to the first terminal of the first switch.
[0019] The second terminal of the first switch and the second terminal of the second capacitor are both connected to the low-voltage input bus.
[0020] In one possible implementation, the first transistor is a high-voltage MOS transistor.
[0021] In one possible implementation, the first switch is turned off when the server load component is hot-plugged.
[0022] The common node of the gate of the first transistor, the second terminal of the third resistor, and the negative terminal of the first diode is used to output the bias voltage.
[0023] In one possible implementation, the first switch is turned on when the server load component is hot-swapped.
[0024] The first capacitor discharges energy through a circuit consisting of the first resistor, the first transistor, the fourth resistor, and the current source.
[0025] In one possible implementation, the hot-swappable bias discharge circuit further includes a second diode, a third capacitor, and a low-dropout linear regulator, wherein...
[0026] The positive terminal of the second diode is connected to the second terminal of the fourth resistor, the first terminal of the second capacitor, and the positive terminal of the current source.
[0027] The cathode of the second diode is connected to the first terminal of the third capacitor and the low-dropout linear regulator.
[0028] The second terminal of the third capacitor is connected to the low-voltage input bus.
[0029] In one possible implementation, the hot-swap bias discharge circuit further includes:
[0030] An amplifier, wherein the positive terminal of the amplifier is connected to the second terminal of the second resistor and the first terminal of the third resistor, and the negative terminal of the amplifier is connected to the common node of the gate of the first transistor, the second terminal of the third resistor, and the negative terminal of the first diode to receive the bias voltage.
[0031] The output of the amplifier is used to output an amplified signal to the subsequent circuit module.
[0032] In one possible implementation, a third diode is further provided on the low-voltage input bus between the second terminal of the first capacitor and the positive terminal of the first diode, the positive terminal of the third diode being connected to the positive terminal of the first diode, and the negative terminal of the third diode being connected to the second terminal of the first capacitor.
[0033] In one possible implementation, the server load component includes a voltage conversion module and a load circuit, wherein the voltage conversion module is used to convert the voltage on the first capacitor into a target voltage for use by the load circuit.
[0034] According to one aspect of this disclosure, an artificial intelligence server is provided, the artificial intelligence server including the hot-swappable bias discharge circuit described above.
[0035] The bias discharge circuit of this embodiment integrates bias voltage output function and energy discharge function. When the server load component is hot-plugged, a bias voltage is provided to the subsequent circuit module according to the voltage input by the high voltage input bus. When the server load component is hot-plugged, the energy of the first capacitor is discharged. Compared with the setting of different circuit modules in related technologies, the circuit complexity can be reduced, the number of circuit components used can be reduced, the space occupied can be reduced, and the cost can be saved.
[0036] Other features and aspects of this disclosure will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description
[0037] The accompanying drawings, which are included in and form part of this specification, illustrate exemplary embodiments, features, and aspects of this disclosure together with the specification and serve to explain the principles of this disclosure.
[0038] Figure 1 A schematic diagram showing the connection between a hot-swappable bias discharge circuit and a server load component according to an embodiment of the present disclosure is illustrated.
[0039] Figure 2 A schematic diagram showing the connection between a hot-swappable bias discharge circuit and a server load component according to an embodiment of the present disclosure is illustrated. Detailed Implementation
[0040] Various exemplary embodiments, features, and aspects of this disclosure will now be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote elements that have the same or similar functions. Although various aspects of the embodiments are shown in the drawings, they are not necessarily drawn to scale unless specifically indicated otherwise.
[0041] As used herein, the terms “comprising,” “including,” “having,” or variations thereof are open-ended and include one or more of the stated features, integrals, elements, steps, components, or functions, but do not exclude the presence or addition of one or more other features, integrals, elements, steps, components, functions, or groups thereof.
[0042] When an element is referred to as “connected,” “coupled,” “responding,” or a variation thereof relative to another element, it may be directly connected, coupled, or responding to another element, or there may be an intermediate element present.
[0043] Although the terms first, second, third, etc., may be used herein to describe various elements / operations, these elements / operations should not be limited by these terms. These terms are used only to distinguish one element / operation from another. Therefore, without departing from the teachings of the inventive concept, a first element / operation in some embodiments may be referred to as a second element / operation in other embodiments. Voltage signal
[0044] The term “exemplary” as used herein means “serving as an example, embodiment, or illustration.” Any embodiment illustrated herein as “exemplary” is not necessarily to be construed as superior to or better than other embodiments.
[0045] Furthermore, to better illustrate this disclosure, numerous specific details are set forth in the following detailed description. Those skilled in the art will understand that this disclosure can be practiced without certain specific details. In some instances, methods, means, components, and circuits well known to those skilled in the art have not been described in detail in order to highlight the main points of this disclosure.
[0046] It should be noted that the information (including but not limited to user device information, user personal information, etc.), data (including but not limited to data used for analysis, data stored, data displayed, etc.) and signals involved in this application are all authorized by the user or fully authorized by all parties, and the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant regions.
[0047] Please see Figure 1 , Figure 1 A schematic diagram showing the connection between a hot-swappable bias discharge circuit and a server load component according to an embodiment of the present disclosure is illustrated.
[0048] like Figure 1 As shown, the bias discharge circuit 10 is applied to the server load component 20.
[0049] The first terminal of the bias discharge circuit 10, the first terminal of the first capacitor C1, and the first terminal of the server load component 20 are all connected to the high voltage input bus (Vbus+).
[0050] The second terminal of the bias discharge circuit 10, the second terminal of the first capacitor C1, and the second terminal of the server load component 20 are all connected to the low-voltage input bus (Vbus-). A control switch 410 is provided on the low-voltage input bus (Vbus-) between the second terminal of the bias discharge circuit 10 and the second terminal of the first capacitor C1.
[0051] The bias discharge circuit 10 is used for:
[0052] When the server load component 20 is hot-plugged, a bias voltage is provided to the subsequent circuit module according to the voltage input by the high voltage input bus (Vbus+);
[0053] When the server load component 20 is hot-swapped, the energy of the first capacitor C1 is released.
[0054] The bias discharge circuit 10 of this embodiment integrates bias voltage output function and energy discharge function. When the server load component 20 is hot-plugged, it provides bias voltage to the subsequent circuit module according to the voltage input by the high voltage input bus (Vbus+). When the server load component 20 is hot-plugged, it realizes energy discharge to the first capacitor C1. Compared with the setting of different circuit modules in related technologies, it can reduce the complexity of the circuit, reduce the use of circuit components, reduce the space occupied, and save costs.
[0055] Among them, the first capacitor C1 serves as a charging capacitor to supply power to the server load component 20.
[0056] This disclosure does not limit the specific implementation of the control switch 410. Those skilled in the art can set it according to actual conditions and needs. For example, the control switch 410 can be a high-voltage switching device. The switching device can include any one of relays, reed switches, silicon controlled rectifiers, switching diodes, switching transistors, electronic bidirectional switches, optocouplers, transistors, etc. The transistor can be a metal-oxide-semiconductor field-effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). The transistor can be based on silicon carbide (SiC) or gallium nitride (GaN) to improve performance.
[0057] For example, the control switch 410 can be a high-voltage transistor.
[0058] This disclosure does not limit the specific control of the control switch 410. Those skilled in the art can configure it to receive external control signals to control its conduction and shutdown according to actual conditions and needs. Alternatively, its switch control function can be integrated into the control logic of this disclosure embodiment. Those skilled in the art can configure it according to actual conditions and needs.
[0059] In this embodiment of the disclosure, hot-plugging can refer to: when the high-voltage power supply cabinet (used to supply high-voltage DC power, not shown) is kept energized, the plug (not shown) of the high-voltage input bus (Vbus+) is inserted into the power supply slot of the high-voltage power supply cabinet.
[0060] In this embodiment of the disclosure, hot-swapping can refer to: while the high-voltage power supply cabinet is in a energized state, the plug of the high-voltage input bus (Vbus+) is pulled out of the power supply slot of the high-voltage power supply cabinet.
[0061] This disclosure does not limit the specific magnitude of the voltage between the high-voltage input bus (Vbus+) and the low-voltage input bus (Vbus-). Those skilled in the art can set the voltage according to actual conditions and needs. For example, the voltage between the high-voltage input bus (Vbus+) and the low-voltage input bus (Vbus-) can be any high voltage above 380V, such as 400V, 600V, 800V, or higher. Of course, the voltage between the high-voltage input bus (Vbus+) and the low-voltage input bus (Vbus-) can also be a voltage below 380V.
[0062] The embodiments disclosed herein do not limit the specific implementation of the server load component 20, nor the specific type of server. Those skilled in the art can set it according to actual conditions and needs.
[0063] For example, the server could be an AI server, which could include a "blade" or "rack-mounted high-density design" to integrate more computing units in a limited space.
[0064] This disclosure does not limit the specific implementation of the subsequent circuit module. Those skilled in the art can configure it according to actual conditions and needs. For example, the subsequent circuit module may include one or more processing components. In one example, the processing components include, but are not limited to, a single processor, discrete components, or a combination of a processor and discrete components. The processor may include a controller in an electronic device with instruction execution capabilities. The processor can be implemented in any suitable manner, for example, by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components. Within the processor, the executable instructions can be executed through hardware circuits such as logic gates, switches, application-specific integrated circuits (ASICs), programmable logic controllers, and embedded microcontrollers.
[0065] The specific implementation of the bias discharge circuit 10 in this embodiment is not limited. Those skilled in the art can set it according to actual conditions and needs, as long as it can be implemented in an integrated manner to provide a bias voltage to the subsequent circuit module according to the voltage input by the high voltage input bus (Vbus+) when the server load component 20 is hot-plugged; and to realize the function of discharging energy from the first capacitor C1 when the server load component 20 is hot-plugged.
[0066] Please see Figure 2 , Figure 2 A schematic diagram showing the connection between a hot-swappable bias discharge circuit 10 and a server load component 20 according to an embodiment of the present disclosure is shown.
[0067] In one possible implementation, such as Figure 2 As shown, the bias discharge circuit 10 may include a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first diode D1, a first transistor Q1, a second capacitor C2, a current source I1, and a first switch K1, wherein,
[0068] The first terminal of the first resistor R1 and the first terminal of the second resistor R2 are both connected to the high voltage input bus (Vbus+).
[0069] The second terminal of the first resistor R1 is connected to the drain of the first transistor Q1.
[0070] The second end of the second resistor R2 is connected to the first end of the third resistor R3.
[0071] The common node of the gate of the first transistor Q1, the second terminal of the third resistor R3, and the cathode of the first diode D1 is used to output the bias voltage.
[0072] The source of the first transistor Q1 is connected to the first terminal of the fourth resistor R4.
[0073] The second end of the fourth resistor R4 is connected to the first end of the second capacitor C2 and the positive terminal of the current source I1.
[0074] The negative terminal of the current source I1 is connected to the first terminal of the first switch K1.
[0075] The second terminal of the first switch K1 and the second terminal of the second capacitor C2 are both connected to the low-voltage input bus (Vbus-).
[0076] The present invention does not limit the selection of parameters for the resistors and capacitors. Those skilled in the art can set them according to actual conditions and needs. For example, the resistance values of the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4, and the capacitance value of the second capacitor C2 can be set according to the required bias voltage, so that the common node of the gate of the first transistor Q1, the second terminal of the third resistor R3, and the negative terminal of the first diode D1 outputs the corresponding bias voltage.
[0077] The specific type of the first transistor Q1 in this embodiment is not limited. Those skilled in the art can set it according to actual conditions and needs. In one possible implementation, the first transistor Q1 can be a high-voltage MOS transistor (High-Voltage Metal-Oxide-Semiconductor Field-Effect Transistor, or simply High-Voltage MOSFET). A high-voltage MOSFET is a field-effect transistor capable of withstanding high breakdown voltages of hundreds to thousands of volts. Its core feature is that, by optimizing the device structure (such as extending the drift region and using wide bandgap materials), it possesses stable switching and voltage withstand capabilities under high-voltage environments while maintaining the basic principle of "gate voltage controlled conduction" of a MOSFET, making it specifically suitable for high-voltage power supply, power conversion, and other scenarios. Of course, this embodiment does not limit the specific type or implementation method of the high-voltage MOSFET.
[0078] For example, the first transistor Q1 can be an NMOS transistor.
[0079] In one possible implementation, such as Figure 2 As shown, when the server load component 20 is hot-plugged, the first switch K1 is turned off.
[0080] The common node of the gate of the first transistor Q1, the second terminal of the third resistor R3, and the negative terminal of the first diode D1 is used to output the bias voltage.
[0081] For example, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the first diode D1, the first transistor Q1, and the second capacitor C2 can form a bias voltage generating unit to generate the bias voltage during hot-plugging.
[0082] In one possible implementation, such as Figure 2 As shown, when the server load component 20 is hot-swapped, the first switch K1 is turned on.
[0083] The first capacitor C1 discharges energy through the circuit of the first resistor R1, the first transistor Q1, the fourth resistor R4, and the current source I1.
[0084] For example, the first resistor R1, the fourth resistor R4, the first diode D1, the first transistor Q1, the second capacitor C2, the current source I1, and the first switch K1 can form an energy discharge unit, which has already achieved energy discharge of the first capacitor C1 during hot-drawing.
[0085] In this embodiment, the energy discharge unit and the bias voltage generation unit reuse the first resistor R1, the fourth resistor R4, the first diode D1, the first transistor Q1, and the second capacitor C2, which can realize bias and / or energy discharge functions during hot-plugging. Compared with related technologies, this saves the cost of components and the area occupied by the circuit.
[0086] In one possible implementation, such as Figure 2 As shown, the hot-swappable bias discharge circuit 10 may further include a second diode D2, a third capacitor C3, and a low-dropout linear regulator LDO, wherein...
[0087] The positive terminal of the second diode D2 is connected to the second terminal of the fourth resistor R4, the first terminal of the second capacitor C2, and the positive terminal of the current source I1.
[0088] The cathode of the second diode D2 is connected to the first terminal of the third capacitor C3 and the low-dropout linear regulator LDO.
[0089] The second terminal of the third capacitor C3 is connected to the low-voltage input bus (Vbus-).
[0090] For example, the low dropout linear regulator (LDO) can be connected to the power supply voltage VCC.
[0091] The second diode D2, the third capacitor C3, and the low-dropout linear regulator LDO can also be reused in the energy discharge unit and the bias voltage generation unit.
[0092] In one possible implementation, such as Figure 2 As shown, the hot-swappable bias discharge circuit 10 may further include:
[0093] Amplifier A1, the positive terminal (+) of amplifier A1 is connected to the second terminal of the second resistor R2 and the first terminal of the third resistor R3, and the negative terminal (-) of amplifier A1 is connected to the common node of the gate of the first transistor Q1, the second terminal of the third resistor R3, and the negative terminal of the first diode D1 to receive the bias voltage.
[0094] The output of amplifier A1 is used to output an amplified signal to the subsequent circuit module, which can be used to generate a switching control signal for the first switch K1 based on the amplified signal.
[0095] The specific type of the first switch K1 disclosed herein is not limited. Those skilled in the art can set it according to actual conditions and needs. For example, the first switch K1 may include any one of the following: relay, reed switch, thyristor, switching diode, switching transistor, electronic bidirectional switch, optocoupler, transistor, etc. The transistor may be a metal-oxide-semiconductor field-effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). The transistor may be based on silicon carbide (SiC) or gallium nitride (GaN) to improve performance.
[0096] The present disclosure does not limit the specific implementation of amplifier A1. Those skilled in the art can implement it according to the actual situation and needs, referring to relevant technologies. For example, amplifier A1 may include an operational amplifier or an error amplifier, which amplifies the error signal at the two input terminals for use by the subsequent circuit module or an external operation control module (such as a processing component).
[0097] This disclosure does not limit the method of generating the control signal for the first switch K1. The charging control circuit of the server load component 20 may also include other downstream circuit modules, such as... Figure 2As shown, the subsequent circuit module may include a hot-swap control module 30 and a pre-charge and switching control module 40. The switching control signal of the first switch K1 can be generated by a signal emitted by the server load component during hot-swapping or hot-plugging. However, this embodiment is not limited to this. The switching control signal of the first switch K1 can also be generated by the hot-swap control module 30 based on the amplified signal from amplifier A1. For example, the hot-swap control module 30 can determine the voltage difference between the high-voltage input bus (Vbus+) and the low-voltage input bus (Vbus-) based on the amplified signal to determine whether the voltage state is normal. During hot-swapping, if the voltage difference is within the normal range, the switching control signal of the first switch K1 can be generated by combining the signal emitted by the server load component during hot-swapping or hot-plugging.
[0098] For example, if the voltage difference is within the normal range and it is determined that the server load component 20 is hot-plugged, a switch control signal can be generated to control the first switch K1 to be turned off; when it is determined that the server load component 20 is hot-plugged, a switch control signal is generated to control the first switch K1 to be turned on.
[0099] The embodiments disclosed herein do not limit the specific implementation of the hot-swap control module 30. Those skilled in the art can set it according to actual conditions and needs. For example, it can be implemented through a processing component.
[0100] For example, such as Figure 2 As shown, in this embodiment, voltage detection is performed using the third resistor R3 and the second resistor R2. Before hot-plugging, the amplified signal (analog signal) output by amplifier A1 allows the hot-plug control module 30 to determine whether the voltage difference between the high-voltage input bus (Vbus+) and the low-voltage input bus (Vbus-) is within the normal range. Similarly, during hot-plugging, the hot-plug control module 30 can determine whether the voltage difference between the high-voltage input bus (Vbus+) and the low-voltage input bus (Vbus-) is within the normal range, and generate a switch control signal to control the first switch K1 to turn on based on the hot-plugging signal of the server load component 20.
[0101] It should be understood that the present disclosure provides a bias discharge circuit 10 to provide bias and discharge functions using the same circuit. The present disclosure does not limit how the switch control signal of the first switch K1 is generated, nor does it limit the implementation and function of the hot-swap control module 30, the pre-charge and switch control module 40.
[0102] The embodiments disclosed herein do not limit the specific implementation of the hot-plug control module 30 in determining the hot-plug state based on the amplified signal. Those skilled in the art can set it according to actual conditions and needs. For example, when the amplified signal gradually rises to a voltage higher than a high potential, it can be determined that it is in a hot-plug state; when the amplified signal gradually drops to a low potential, it can be determined that it is in a hot-plug state.
[0103] Of course, the switching control signal of the first switch K1 can also be received from an external control module, and this embodiment of the present disclosure does not limit this.
[0104] For example, the pre-charge and switch control module 40 can perform pre-charge control on the first capacitor C1 when the hot-swap control module 30 determines that the current state is hot-swap. The first capacitor C1 is slowly charged by limiting the maximum charging current to avoid the voltage of the first capacitor C1 rising too fast and causing damage during the process. When the voltage of the first capacitor C1 rises to close to the high voltage bus voltage (such as 800V), the pre-charge is stopped.
[0105] The embodiments disclosed herein do not limit the specific method of pre-charge control. Those skilled in the art can implement it by referring to the pre-charge technology of related technologies according to actual conditions and needs.
[0106] The pre-charging and switching control module 40 may include a pre-charging control circuit. A control switch 410 may be disposed within the pre-charging and switching control module 40. The control switch 410 may include a second switch K2 and a second diode D2. During pre-charging, the pre-charging and switching control module 40 can control the second switch K2 to be turned on; at the end of pre-charging, it can control the second switch K2 to be turned off. The second switch K2 may be a main power switch (high-voltage MOSFET), and the second diode D2 may be a reverse protection diode / freewheeling diode.
[0107] The specific type of the second switch K2 is not limited in this embodiment, and the specific implementation of the pre-charging and switch control module 40 is not limited in this embodiment. Those skilled in the art can set it according to actual conditions and needs.
[0108] The following is combined Figure 2 The operation of the hot-swappable bias discharge circuit 10 is described by way of example.
[0109] For example, such as Figure 2As shown, when the server load component 20 is hot-plugged, the voltage of the first capacitor C1 gradually increases from 0. When the server load component 20 is hot-plugged, the current flows through the second resistor R2 and the third resistor R3, and the voltage is applied to the first transistor Q1. The initial high voltage is higher than the threshold voltage of the first transistor Q1. Therefore, the first transistor Q1 is turned on, and the second capacitor C2 also begins to be charged. When the voltage of the second capacitor C2 reaches the preset voltage (e.g., 20V), the first transistor Q1 operates in the linear region, thereby generating a bias voltage as an auxiliary power supply.
[0110] For example, such as Figure 2 As shown, the fourth resistor R4 in this embodiment can achieve current limiting, preventing the first transistor Q1 from being turned off due to excessive current during the conduction of the first transistor Q1, which would cause the source voltage to be too high and the gate-source voltage to be lower than the conduction threshold voltage.
[0111] For example, such as Figure 2 As shown, when the server load component 20 is hot-swapped, the first switch K1 is turned on after receiving the bleeding control signal, and the second capacitor C2 discharges through the first current source I1. When the voltage on the second capacitor C2 drops to a certain level, the gate-source voltage of the first transistor Q1 is higher than the conduction threshold voltage, and the first transistor Q1 is turned on. At this time, the first capacitor C1 discharges energy through the loop formed by the first resistor R1, the first transistor Q1, the fourth resistor R4, and the current source I1.
[0112] Therefore, the embodiments of this disclosure integrate the auxiliary power supply function of providing bias voltage and the voltage relief function of the first capacitor C1 through a bias discharge circuit 10, which not only reduces the complexity of the circuit, but also saves circuit area, space and cost.
[0113] In one possible implementation, the server load component 20 may include a voltage conversion module (not shown) and a load circuit (not shown), wherein the voltage conversion module is used to convert the voltage on the first capacitor C1 into a target voltage for use by the load circuit.
[0114] This disclosure does not limit the implementation of the voltage conversion module. The voltage conversion module may include a DC-DC converter to convert high voltage (e.g., 800V) into the low voltage required by the AI server. The load circuit may include, for example, a processing circuit composed of a processor such as a graphics processing unit (GPU) or a central processing unit (CPU).
[0115] According to one aspect of this disclosure, an artificial intelligence server is provided, the artificial intelligence server including the hot-swappable bias discharge circuit 10.
[0116] The various embodiments of this disclosure have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen to best explain the principles, practical application, or technical improvements to the embodiments in the market, or to enable others skilled in the art to understand the embodiments disclosed herein.
Claims
1. A hot-swappable bias discharge circuit, characterized in that, The bias discharge circuit is applied to server load components, wherein... The first terminal of the bias discharge circuit, the first terminal of the first capacitor, and the first terminal of the server load component are all connected to the high-voltage input bus. The second terminal of the bias discharge circuit, the second terminal of the first capacitor, and the second terminal of the server load component are all connected to the low-voltage input bus. A control switch is provided on the low-voltage input bus between the second terminal of the bias discharge circuit and the second terminal of the first capacitor. The bias discharge circuit is used for: When the server load component is hot-plugged, a bias voltage is provided to the subsequent circuit module according to the voltage input by the high-voltage input bus; When the server load component is hot-swapped, the energy of the first capacitor is released.
2. The hot-swappable bias discharge circuit according to claim 1, characterized in that, The bias discharge circuit includes a first resistor, a second resistor, a third resistor, a fourth resistor, a first diode, a first transistor, a second capacitor, a current source, and a first switch, wherein... Both the first terminal of the first resistor and the first terminal of the second resistor are connected to the high-voltage input bus. The second terminal of the first resistor is connected to the drain of the first transistor. The second end of the second resistor is connected to the first end of the third resistor. The common node of the gate of the first transistor, the second terminal of the third resistor, and the negative terminal of the first diode is used to output the bias voltage. The source of the first transistor is connected to the first terminal of the fourth resistor. The second end of the fourth resistor is connected to the first end of the second capacitor and the positive terminal of the current source. The negative terminal of the current source is connected to the first terminal of the first switch. The second terminal of the first switch and the second terminal of the second capacitor are both connected to the low-voltage input bus.
3. The hot-swappable bias discharge circuit according to claim 2, characterized in that, The first transistor is a high-voltage MOS transistor.
4. The hot-swappable bias discharge circuit according to claim 2, characterized in that, When the server load balancing component is hot-plugged, the first switch is turned off. The common node of the gate of the first transistor, the second terminal of the third resistor, and the negative terminal of the first diode is used to output the bias voltage.
5. The hot-swappable bias discharge circuit according to claim 2, characterized in that, When the server load component is hot-swapped, the first switch is turned on. The first capacitor discharges energy through a circuit consisting of the first resistor, the first transistor, the fourth resistor, and the current source.
6. The hot-swappable bias discharge circuit according to claim 2, characterized in that, The hot-swappable bias discharge circuit also includes a second diode, a third capacitor, and a low-dropout linear regulator. The positive terminal of the second diode is connected to the second terminal of the fourth resistor, the first terminal of the second capacitor, and the positive terminal of the current source. The cathode of the second diode is connected to the first terminal of the third capacitor and the low-dropout linear regulator. The second terminal of the third capacitor is connected to the low-voltage input bus.
7. The hot-swappable bias discharge circuit according to claim 2, characterized in that, The hot-swap bias discharge circuit also includes: An amplifier, wherein the positive terminal of the amplifier is connected to the second terminal of the second resistor and the first terminal of the third resistor, and the negative terminal of the amplifier is connected to the common node of the gate of the first transistor, the second terminal of the third resistor, and the negative terminal of the first diode to receive the bias voltage. The output of the amplifier is used to output an amplified signal to the subsequent circuit module.
8. The hot-swappable bias discharge circuit according to claim 2, characterized in that, A third diode is also provided on the low-voltage input bus between the second terminal of the first capacitor and the positive terminal of the first diode. The positive terminal of the third diode is connected to the positive terminal of the first diode, and the negative terminal of the third diode is connected to the second terminal of the first capacitor.
9. The hot-swappable bias discharge circuit according to claim 1, characterized in that, The server load component includes a voltage conversion module and a load circuit. The voltage conversion module is used to convert the voltage on the first capacitor into a target voltage for use by the load circuit.
10. An artificial intelligence server, characterized in that, The artificial intelligence server includes the hot-swappable bias discharge circuit as described in any one of claims 1 to 9.